Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for subject:(transistors). Showing records 1 – 30 of 1336 total matches.

[1] [2] [3] [4] [5] … [45]

Search Limiters

Last 2 Years | English Only

Degrees

Levels

Languages

Country

▼ Search Limiters


Rochester Institute of Technology

1. Mauersberg, Diane. Rapid thermal processing of polysilicon emitter transistors.

Degree: Electrical Engineering, 1994, Rochester Institute of Technology

 The recent developments in rapid thermal processing in the past several years have shown it to have much potential in achieving full dopant activation of… (more)

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mauersberg, D. (1994). Rapid thermal processing of polysilicon emitter transistors. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/5603

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mauersberg, Diane. “Rapid thermal processing of polysilicon emitter transistors.” 1994. Thesis, Rochester Institute of Technology. Accessed October 31, 2020. https://scholarworks.rit.edu/theses/5603.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mauersberg, Diane. “Rapid thermal processing of polysilicon emitter transistors.” 1994. Web. 31 Oct 2020.

Vancouver:

Mauersberg D. Rapid thermal processing of polysilicon emitter transistors. [Internet] [Thesis]. Rochester Institute of Technology; 1994. [cited 2020 Oct 31]. Available from: https://scholarworks.rit.edu/theses/5603.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mauersberg D. Rapid thermal processing of polysilicon emitter transistors. [Thesis]. Rochester Institute of Technology; 1994. Available from: https://scholarworks.rit.edu/theses/5603

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

2. Cheung, David Kin-Poon. Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors.

Degree: MS, Electrical and Electronics Engineering, 1967, Oregon State University

 Four methods for the simultaneous fabrication of field-effect and bipolar transistors have been investigated. The basic process involves obtaining two different junction depths by a… (more)

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Cheung, D. K. (1967). Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/47002

Chicago Manual of Style (16th Edition):

Cheung, David Kin-Poon. “Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors.” 1967. Masters Thesis, Oregon State University. Accessed October 31, 2020. http://hdl.handle.net/1957/47002.

MLA Handbook (7th Edition):

Cheung, David Kin-Poon. “Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors.” 1967. Web. 31 Oct 2020.

Vancouver:

Cheung DK. Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors. [Internet] [Masters thesis]. Oregon State University; 1967. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/1957/47002.

Council of Science Editors:

Cheung DK. Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors. [Masters Thesis]. Oregon State University; 1967. Available from: http://hdl.handle.net/1957/47002


Oregon State University

3. Khanna, Satya Pal. The concentration profile of diffused radio-active antimony in a silicon-dioxide layer.

Degree: MS, Electrical Engineering, 1963, Oregon State University

 The selective masking effect of a thermally grown layer of silicon dioxide has been widely utilized as a technique for controlling the geometry and impurity… (more)

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Khanna, S. P. (1963). The concentration profile of diffused radio-active antimony in a silicon-dioxide layer. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/48816

Chicago Manual of Style (16th Edition):

Khanna, Satya Pal. “The concentration profile of diffused radio-active antimony in a silicon-dioxide layer.” 1963. Masters Thesis, Oregon State University. Accessed October 31, 2020. http://hdl.handle.net/1957/48816.

MLA Handbook (7th Edition):

Khanna, Satya Pal. “The concentration profile of diffused radio-active antimony in a silicon-dioxide layer.” 1963. Web. 31 Oct 2020.

Vancouver:

Khanna SP. The concentration profile of diffused radio-active antimony in a silicon-dioxide layer. [Internet] [Masters thesis]. Oregon State University; 1963. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/1957/48816.

Council of Science Editors:

Khanna SP. The concentration profile of diffused radio-active antimony in a silicon-dioxide layer. [Masters Thesis]. Oregon State University; 1963. Available from: http://hdl.handle.net/1957/48816


Oregon State University

4. Richardson, Dennis W. Predicting transistor switching time.

Degree: MS, Electrical Engineering, 1963, Oregon State University

 This thesis is a development of two sets of equations predicting the switching times of a saturated transistor. The first set of equations defines the… (more)

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Richardson, D. W. (1963). Predicting transistor switching time. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/48721

Chicago Manual of Style (16th Edition):

Richardson, Dennis W. “Predicting transistor switching time.” 1963. Masters Thesis, Oregon State University. Accessed October 31, 2020. http://hdl.handle.net/1957/48721.

MLA Handbook (7th Edition):

Richardson, Dennis W. “Predicting transistor switching time.” 1963. Web. 31 Oct 2020.

Vancouver:

Richardson DW. Predicting transistor switching time. [Internet] [Masters thesis]. Oregon State University; 1963. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/1957/48721.

Council of Science Editors:

Richardson DW. Predicting transistor switching time. [Masters Thesis]. Oregon State University; 1963. Available from: http://hdl.handle.net/1957/48721


Oregon State University

5. Ballieu, Howard Lee. The binistor as an electronic switching element.

Degree: MS, Electrical Engineering, 1961, Oregon State University

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ballieu, H. L. (1961). The binistor as an electronic switching element. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/49347

Chicago Manual of Style (16th Edition):

Ballieu, Howard Lee. “The binistor as an electronic switching element.” 1961. Masters Thesis, Oregon State University. Accessed October 31, 2020. http://hdl.handle.net/1957/49347.

MLA Handbook (7th Edition):

Ballieu, Howard Lee. “The binistor as an electronic switching element.” 1961. Web. 31 Oct 2020.

Vancouver:

Ballieu HL. The binistor as an electronic switching element. [Internet] [Masters thesis]. Oregon State University; 1961. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/1957/49347.

Council of Science Editors:

Ballieu HL. The binistor as an electronic switching element. [Masters Thesis]. Oregon State University; 1961. Available from: http://hdl.handle.net/1957/49347


Oregon State University

6. Smith, Roy John. The protection of semiconductor devices from electrical transients.

Degree: MS, Electrical Engineering, 1962, Oregon State University

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Smith, R. J. (1962). The protection of semiconductor devices from electrical transients. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/49973

Chicago Manual of Style (16th Edition):

Smith, Roy John. “The protection of semiconductor devices from electrical transients.” 1962. Masters Thesis, Oregon State University. Accessed October 31, 2020. http://hdl.handle.net/1957/49973.

MLA Handbook (7th Edition):

Smith, Roy John. “The protection of semiconductor devices from electrical transients.” 1962. Web. 31 Oct 2020.

Vancouver:

Smith RJ. The protection of semiconductor devices from electrical transients. [Internet] [Masters thesis]. Oregon State University; 1962. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/1957/49973.

Council of Science Editors:

Smith RJ. The protection of semiconductor devices from electrical transients. [Masters Thesis]. Oregon State University; 1962. Available from: http://hdl.handle.net/1957/49973


Oregon State University

7. Tao, David Ming-Shih. A complementary MOS random-access-memory cell wth double-diffused MOS transistors.

Degree: PhD, Electrical and Electronics Engineering, 1972, Oregon State University

 The use of double-diffused n-type MOS transistor (DN-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of this investigation. DN-MOS transistors(more)

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tao, D. M. (1972). A complementary MOS random-access-memory cell wth double-diffused MOS transistors. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/44800

Chicago Manual of Style (16th Edition):

Tao, David Ming-Shih. “A complementary MOS random-access-memory cell wth double-diffused MOS transistors.” 1972. Doctoral Dissertation, Oregon State University. Accessed October 31, 2020. http://hdl.handle.net/1957/44800.

MLA Handbook (7th Edition):

Tao, David Ming-Shih. “A complementary MOS random-access-memory cell wth double-diffused MOS transistors.” 1972. Web. 31 Oct 2020.

Vancouver:

Tao DM. A complementary MOS random-access-memory cell wth double-diffused MOS transistors. [Internet] [Doctoral dissertation]. Oregon State University; 1972. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/1957/44800.

Council of Science Editors:

Tao DM. A complementary MOS random-access-memory cell wth double-diffused MOS transistors. [Doctoral Dissertation]. Oregon State University; 1972. Available from: http://hdl.handle.net/1957/44800


Oregon State University

8. Limvorapun, Thawee. The MOS tetrode transistor.

Degree: MS, Electrical and Electronics Engineering, 1972, Oregon State University

 The MOS tetrode transistor is studied in this project. This device is ideally suited for high frequency and switching application. In effect it is the… (more)

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Limvorapun, T. (1972). The MOS tetrode transistor. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/45372

Chicago Manual of Style (16th Edition):

Limvorapun, Thawee. “The MOS tetrode transistor.” 1972. Masters Thesis, Oregon State University. Accessed October 31, 2020. http://hdl.handle.net/1957/45372.

MLA Handbook (7th Edition):

Limvorapun, Thawee. “The MOS tetrode transistor.” 1972. Web. 31 Oct 2020.

Vancouver:

Limvorapun T. The MOS tetrode transistor. [Internet] [Masters thesis]. Oregon State University; 1972. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/1957/45372.

Council of Science Editors:

Limvorapun T. The MOS tetrode transistor. [Masters Thesis]. Oregon State University; 1972. Available from: http://hdl.handle.net/1957/45372


Oregon State University

9. Hwang, Yun-sheng. Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors.

Degree: MS, Electrical and Electronics Engineering, 1970, Oregon State University

 The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices made with single-layer aluminum-oxide films and double-layer films which were made by… (more)

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hwang, Y. (1970). Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/45752

Chicago Manual of Style (16th Edition):

Hwang, Yun-sheng. “Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors.” 1970. Masters Thesis, Oregon State University. Accessed October 31, 2020. http://hdl.handle.net/1957/45752.

MLA Handbook (7th Edition):

Hwang, Yun-sheng. “Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors.” 1970. Web. 31 Oct 2020.

Vancouver:

Hwang Y. Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors. [Internet] [Masters thesis]. Oregon State University; 1970. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/1957/45752.

Council of Science Editors:

Hwang Y. Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors. [Masters Thesis]. Oregon State University; 1970. Available from: http://hdl.handle.net/1957/45752


Oregon State University

10. Chou, Pen Chao. A MOS-transistor with submicron, and graded channel.

Degree: PhD, Electrical and Electronics Engineering, 1971, Oregon State University

 The theoretical aspects and fabrication techniques of a new surface field-effect transistor were investigated. The new MOS-transistor uses a three-layer structure similar to those found… (more)

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chou, P. C. (1971). A MOS-transistor with submicron, and graded channel. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/46003

Chicago Manual of Style (16th Edition):

Chou, Pen Chao. “A MOS-transistor with submicron, and graded channel.” 1971. Doctoral Dissertation, Oregon State University. Accessed October 31, 2020. http://hdl.handle.net/1957/46003.

MLA Handbook (7th Edition):

Chou, Pen Chao. “A MOS-transistor with submicron, and graded channel.” 1971. Web. 31 Oct 2020.

Vancouver:

Chou PC. A MOS-transistor with submicron, and graded channel. [Internet] [Doctoral dissertation]. Oregon State University; 1971. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/1957/46003.

Council of Science Editors:

Chou PC. A MOS-transistor with submicron, and graded channel. [Doctoral Dissertation]. Oregon State University; 1971. Available from: http://hdl.handle.net/1957/46003


Oregon State University

11. Delzer, Dennis Richard. Vacuum evaporated dielectrics in MOS structures.

Degree: PhD, Electrical and Electronics Engineering, 1968, Oregon State University

 Vacuum evaporated dielectrics for use in MOS structures were studied in this research project. Dielectric films were deposited on substrates by electron bombardment evaporation of… (more)

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Delzer, D. R. (1968). Vacuum evaporated dielectrics in MOS structures. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/46875

Chicago Manual of Style (16th Edition):

Delzer, Dennis Richard. “Vacuum evaporated dielectrics in MOS structures.” 1968. Doctoral Dissertation, Oregon State University. Accessed October 31, 2020. http://hdl.handle.net/1957/46875.

MLA Handbook (7th Edition):

Delzer, Dennis Richard. “Vacuum evaporated dielectrics in MOS structures.” 1968. Web. 31 Oct 2020.

Vancouver:

Delzer DR. Vacuum evaporated dielectrics in MOS structures. [Internet] [Doctoral dissertation]. Oregon State University; 1968. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/1957/46875.

Council of Science Editors:

Delzer DR. Vacuum evaporated dielectrics in MOS structures. [Doctoral Dissertation]. Oregon State University; 1968. Available from: http://hdl.handle.net/1957/46875


Michigan State University

12. Singh, Skuhbir, 1936-. Current saturation mechanism in field-effect transistors.

Degree: PhD, Department of Electrical Engineering and Systems Science, 1970, Michigan State University

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Singh, Skuhbir, 1. (1970). Current saturation mechanism in field-effect transistors. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:36927

Chicago Manual of Style (16th Edition):

Singh, Skuhbir, 1936-. “Current saturation mechanism in field-effect transistors.” 1970. Doctoral Dissertation, Michigan State University. Accessed October 31, 2020. http://etd.lib.msu.edu/islandora/object/etd:36927.

MLA Handbook (7th Edition):

Singh, Skuhbir, 1936-. “Current saturation mechanism in field-effect transistors.” 1970. Web. 31 Oct 2020.

Vancouver:

Singh, Skuhbir 1. Current saturation mechanism in field-effect transistors. [Internet] [Doctoral dissertation]. Michigan State University; 1970. [cited 2020 Oct 31]. Available from: http://etd.lib.msu.edu/islandora/object/etd:36927.

Council of Science Editors:

Singh, Skuhbir 1. Current saturation mechanism in field-effect transistors. [Doctoral Dissertation]. Michigan State University; 1970. Available from: http://etd.lib.msu.edu/islandora/object/etd:36927


Michigan State University

13. ElSherif, Helmy Hassan. Transistor large signal analysis.

Degree: PhD, Department of Electrical Engineering, 1964, Michigan State University

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

ElSherif, H. H. (1964). Transistor large signal analysis. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:39847

Chicago Manual of Style (16th Edition):

ElSherif, Helmy Hassan. “Transistor large signal analysis.” 1964. Doctoral Dissertation, Michigan State University. Accessed October 31, 2020. http://etd.lib.msu.edu/islandora/object/etd:39847.

MLA Handbook (7th Edition):

ElSherif, Helmy Hassan. “Transistor large signal analysis.” 1964. Web. 31 Oct 2020.

Vancouver:

ElSherif HH. Transistor large signal analysis. [Internet] [Doctoral dissertation]. Michigan State University; 1964. [cited 2020 Oct 31]. Available from: http://etd.lib.msu.edu/islandora/object/etd:39847.

Council of Science Editors:

ElSherif HH. Transistor large signal analysis. [Doctoral Dissertation]. Michigan State University; 1964. Available from: http://etd.lib.msu.edu/islandora/object/etd:39847


University of Arizona

14. Nygaard, Paul Andrew, 1940-. Models of the drift transistor .

Degree: 1964, University of Arizona

Subjects/Keywords: Transistors.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Nygaard, Paul Andrew, 1. (1964). Models of the drift transistor . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/319533

Chicago Manual of Style (16th Edition):

Nygaard, Paul Andrew, 1940-. “Models of the drift transistor .” 1964. Masters Thesis, University of Arizona. Accessed October 31, 2020. http://hdl.handle.net/10150/319533.

MLA Handbook (7th Edition):

Nygaard, Paul Andrew, 1940-. “Models of the drift transistor .” 1964. Web. 31 Oct 2020.

Vancouver:

Nygaard, Paul Andrew 1. Models of the drift transistor . [Internet] [Masters thesis]. University of Arizona; 1964. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/10150/319533.

Council of Science Editors:

Nygaard, Paul Andrew 1. Models of the drift transistor . [Masters Thesis]. University of Arizona; 1964. Available from: http://hdl.handle.net/10150/319533


University of Arizona

15. Latorre, Victor Robert, 1931-. Frequency variations of transistor parameters .

Degree: 1956, University of Arizona

Subjects/Keywords: Transistors.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Latorre, Victor Robert, 1. (1956). Frequency variations of transistor parameters . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/319587

Chicago Manual of Style (16th Edition):

Latorre, Victor Robert, 1931-. “Frequency variations of transistor parameters .” 1956. Masters Thesis, University of Arizona. Accessed October 31, 2020. http://hdl.handle.net/10150/319587.

MLA Handbook (7th Edition):

Latorre, Victor Robert, 1931-. “Frequency variations of transistor parameters .” 1956. Web. 31 Oct 2020.

Vancouver:

Latorre, Victor Robert 1. Frequency variations of transistor parameters . [Internet] [Masters thesis]. University of Arizona; 1956. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/10150/319587.

Council of Science Editors:

Latorre, Victor Robert 1. Frequency variations of transistor parameters . [Masters Thesis]. University of Arizona; 1956. Available from: http://hdl.handle.net/10150/319587


Georgia Tech

16. Rice, Lincoln Phelps. A transistorized regulated power supply.

Degree: MS, Electric Engineering, 1954, Georgia Tech

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rice, L. P. (1954). A transistorized regulated power supply. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/13868

Chicago Manual of Style (16th Edition):

Rice, Lincoln Phelps. “A transistorized regulated power supply.” 1954. Masters Thesis, Georgia Tech. Accessed October 31, 2020. http://hdl.handle.net/1853/13868.

MLA Handbook (7th Edition):

Rice, Lincoln Phelps. “A transistorized regulated power supply.” 1954. Web. 31 Oct 2020.

Vancouver:

Rice LP. A transistorized regulated power supply. [Internet] [Masters thesis]. Georgia Tech; 1954. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/1853/13868.

Council of Science Editors:

Rice LP. A transistorized regulated power supply. [Masters Thesis]. Georgia Tech; 1954. Available from: http://hdl.handle.net/1853/13868


University of British Columbia

17. Cameron, Frank Charles. Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier.

Degree: Master of Applied Science - MASc, Electrical and Computer Engineering, 1962, University of British Columbia

 Bruun and Grinich have previously described video amplifier designs using resistance-capacitance feedback in the emitter lead for stages in the common-emitter configuration. Diffusion-type alloy-junction transistors(more)

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Cameron, F. C. (1962). Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier. (Masters Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/39615

Chicago Manual of Style (16th Edition):

Cameron, Frank Charles. “Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier.” 1962. Masters Thesis, University of British Columbia. Accessed October 31, 2020. http://hdl.handle.net/2429/39615.

MLA Handbook (7th Edition):

Cameron, Frank Charles. “Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier.” 1962. Web. 31 Oct 2020.

Vancouver:

Cameron FC. Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier. [Internet] [Masters thesis]. University of British Columbia; 1962. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/2429/39615.

Council of Science Editors:

Cameron FC. Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier. [Masters Thesis]. University of British Columbia; 1962. Available from: http://hdl.handle.net/2429/39615


University of British Columbia

18. Hatton, Walter Lewis. Noise figure of the transistor amplifier.

Degree: Master of Applied Science - MASc, Electrical and Computer Engineering, 1951, University of British Columbia

 The noise figure of the transistor amplifier is of special interest since the large quantity of excess noise present limits the usefulness of the transistor… (more)

Subjects/Keywords: Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hatton, W. L. (1951). Noise figure of the transistor amplifier. (Masters Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/40899

Chicago Manual of Style (16th Edition):

Hatton, Walter Lewis. “Noise figure of the transistor amplifier.” 1951. Masters Thesis, University of British Columbia. Accessed October 31, 2020. http://hdl.handle.net/2429/40899.

MLA Handbook (7th Edition):

Hatton, Walter Lewis. “Noise figure of the transistor amplifier.” 1951. Web. 31 Oct 2020.

Vancouver:

Hatton WL. Noise figure of the transistor amplifier. [Internet] [Masters thesis]. University of British Columbia; 1951. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/2429/40899.

Council of Science Editors:

Hatton WL. Noise figure of the transistor amplifier. [Masters Thesis]. University of British Columbia; 1951. Available from: http://hdl.handle.net/2429/40899


Oregon State University

19. Gorecki, Jenna Y. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.

Degree: MS, Chemical Engineering, 2016, Oregon State University

 Inkjet-printed p-type copper(I) iodide-based TFTs were successfully fabricated. As-printed copper(I) halide semiconductor films, such as CuI, CuBrI, and CuClI, were used as p-type active channel… (more)

Subjects/Keywords: Thin-Film Transistors; Thin film transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gorecki, J. Y. (2016). Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/59314

Chicago Manual of Style (16th Edition):

Gorecki, Jenna Y. “Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.” 2016. Masters Thesis, Oregon State University. Accessed October 31, 2020. http://hdl.handle.net/1957/59314.

MLA Handbook (7th Edition):

Gorecki, Jenna Y. “Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.” 2016. Web. 31 Oct 2020.

Vancouver:

Gorecki JY. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. [Internet] [Masters thesis]. Oregon State University; 2016. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/1957/59314.

Council of Science Editors:

Gorecki JY. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. [Masters Thesis]. Oregon State University; 2016. Available from: http://hdl.handle.net/1957/59314


University of Johannesburg

20. Prest, Rory Bruce. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.

Degree: 2014, University of Johannesburg

D.Ing. (Electrical & Electronic Engineering )

In recent years, bipolar transistors have become available with large current ratings (300A-1DODA). The purpose 01 this study is… (more)

Subjects/Keywords: Bipolar transistors; Bipolar integrated circuits; Junction transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Prest, R. B. (2014). Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/9511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Prest, Rory Bruce. “Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.” 2014. Thesis, University of Johannesburg. Accessed October 31, 2020. http://hdl.handle.net/10210/9511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Prest, Rory Bruce. “Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.” 2014. Web. 31 Oct 2020.

Vancouver:

Prest RB. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. [Internet] [Thesis]. University of Johannesburg; 2014. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/10210/9511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Prest RB. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. [Thesis]. University of Johannesburg; 2014. Available from: http://hdl.handle.net/10210/9511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Fournier, David. Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz.

Degree: Docteur es, Micro-Nanotechnologie, Acoustique et Télécommunication, 2010, Université Lille I – Sciences et Technologies

Le marché des amplificateurs de puissance pour les combinés téléphoniques portables est actuellement dominé par les semi-conducteurs III-V, les transistors HBT et PHEMT GaAs étant… (more)

Subjects/Keywords: Transistors LDMOS; Transistors à grille métallique

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fournier, D. (2010). Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz. (Doctoral Dissertation). Université Lille I – Sciences et Technologies. Retrieved from http://www.theses.fr/2010LIL10045

Chicago Manual of Style (16th Edition):

Fournier, David. “Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz.” 2010. Doctoral Dissertation, Université Lille I – Sciences et Technologies. Accessed October 31, 2020. http://www.theses.fr/2010LIL10045.

MLA Handbook (7th Edition):

Fournier, David. “Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz.” 2010. Web. 31 Oct 2020.

Vancouver:

Fournier D. Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz. [Internet] [Doctoral dissertation]. Université Lille I – Sciences et Technologies; 2010. [cited 2020 Oct 31]. Available from: http://www.theses.fr/2010LIL10045.

Council of Science Editors:

Fournier D. Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz. [Doctoral Dissertation]. Université Lille I – Sciences et Technologies; 2010. Available from: http://www.theses.fr/2010LIL10045

22. Shirinskaya, Anna. Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques.

Degree: Docteur es, Chimie, 2017, Université Paris-Saclay (ComUE)

Les Transistors Organiques Electrochimiques (OECT) sont largement utilisés comme les capteurs dans de nombreux appareils bioélectroniques. Bien qu’ils aient été largement étudiés au cours de… (more)

Subjects/Keywords: Physics; Transistors; Organic; Physics; Transistors; Organic

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Shirinskaya, A. (2017). Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques. (Doctoral Dissertation). Université Paris-Saclay (ComUE). Retrieved from http://www.theses.fr/2017SACLX055

Chicago Manual of Style (16th Edition):

Shirinskaya, Anna. “Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques.” 2017. Doctoral Dissertation, Université Paris-Saclay (ComUE). Accessed October 31, 2020. http://www.theses.fr/2017SACLX055.

MLA Handbook (7th Edition):

Shirinskaya, Anna. “Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques.” 2017. Web. 31 Oct 2020.

Vancouver:

Shirinskaya A. Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques. [Internet] [Doctoral dissertation]. Université Paris-Saclay (ComUE); 2017. [cited 2020 Oct 31]. Available from: http://www.theses.fr/2017SACLX055.

Council of Science Editors:

Shirinskaya A. Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques. [Doctoral Dissertation]. Université Paris-Saclay (ComUE); 2017. Available from: http://www.theses.fr/2017SACLX055


Michigan State University

23. Sun, Chih-Chieh Jack. A noise study of bipolar junction transistor reliability.

Degree: PhD, Department of Electrical Engineering, 1993, Michigan State University

Subjects/Keywords: Transistors; Bipolar transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Sun, C. J. (1993). A noise study of bipolar junction transistor reliability. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:22579

Chicago Manual of Style (16th Edition):

Sun, Chih-Chieh Jack. “A noise study of bipolar junction transistor reliability.” 1993. Doctoral Dissertation, Michigan State University. Accessed October 31, 2020. http://etd.lib.msu.edu/islandora/object/etd:22579.

MLA Handbook (7th Edition):

Sun, Chih-Chieh Jack. “A noise study of bipolar junction transistor reliability.” 1993. Web. 31 Oct 2020.

Vancouver:

Sun CJ. A noise study of bipolar junction transistor reliability. [Internet] [Doctoral dissertation]. Michigan State University; 1993. [cited 2020 Oct 31]. Available from: http://etd.lib.msu.edu/islandora/object/etd:22579.

Council of Science Editors:

Sun CJ. A noise study of bipolar junction transistor reliability. [Doctoral Dissertation]. Michigan State University; 1993. Available from: http://etd.lib.msu.edu/islandora/object/etd:22579


Rochester Institute of Technology

24. Anderson, Jackson D. Measurement of Ferroelectric Films in MFM and MFIS Structures.

Degree: MS, Microelectronic Engineering, 2017, Rochester Institute of Technology

  For many years ferroelectric memory has been used in applications requiring low power, yet mainstream adoption has been stifled due to integration and scaling… (more)

Subjects/Keywords: Capacitors; Ferroelectric; Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Anderson, J. D. (2017). Measurement of Ferroelectric Films in MFM and MFIS Structures. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/9547

Chicago Manual of Style (16th Edition):

Anderson, Jackson D. “Measurement of Ferroelectric Films in MFM and MFIS Structures.” 2017. Masters Thesis, Rochester Institute of Technology. Accessed October 31, 2020. https://scholarworks.rit.edu/theses/9547.

MLA Handbook (7th Edition):

Anderson, Jackson D. “Measurement of Ferroelectric Films in MFM and MFIS Structures.” 2017. Web. 31 Oct 2020.

Vancouver:

Anderson JD. Measurement of Ferroelectric Films in MFM and MFIS Structures. [Internet] [Masters thesis]. Rochester Institute of Technology; 2017. [cited 2020 Oct 31]. Available from: https://scholarworks.rit.edu/theses/9547.

Council of Science Editors:

Anderson JD. Measurement of Ferroelectric Films in MFM and MFIS Structures. [Masters Thesis]. Rochester Institute of Technology; 2017. Available from: https://scholarworks.rit.edu/theses/9547


Penn State University

25. Hollander, Matthew Johnston. Investigation of Dielectric Overlayers and Device Processing on Transport and Performance of Epitaxial Graphene Field Effect Transistors.

Degree: 2011, Penn State University

 Graphene is a two-dimensional, one-atom thick layer of carbon atoms arranged in a honeycomb lattice. Exhibiting exceptional physical and electronic properties, graphene has attracted much… (more)

Subjects/Keywords: graphene; transistors; FET

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hollander, M. J. (2011). Investigation of Dielectric Overlayers and Device Processing on Transport and Performance of Epitaxial Graphene Field Effect Transistors. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/12366

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hollander, Matthew Johnston. “Investigation of Dielectric Overlayers and Device Processing on Transport and Performance of Epitaxial Graphene Field Effect Transistors.” 2011. Thesis, Penn State University. Accessed October 31, 2020. https://submit-etda.libraries.psu.edu/catalog/12366.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hollander, Matthew Johnston. “Investigation of Dielectric Overlayers and Device Processing on Transport and Performance of Epitaxial Graphene Field Effect Transistors.” 2011. Web. 31 Oct 2020.

Vancouver:

Hollander MJ. Investigation of Dielectric Overlayers and Device Processing on Transport and Performance of Epitaxial Graphene Field Effect Transistors. [Internet] [Thesis]. Penn State University; 2011. [cited 2020 Oct 31]. Available from: https://submit-etda.libraries.psu.edu/catalog/12366.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hollander MJ. Investigation of Dielectric Overlayers and Device Processing on Transport and Performance of Epitaxial Graphene Field Effect Transistors. [Thesis]. Penn State University; 2011. Available from: https://submit-etda.libraries.psu.edu/catalog/12366

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

26. Hubert C George. Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>.

Degree: Electrical Engineering, 2011, University of Notre Dame

  Significant attention has been given to the so-called “blinking dot” phenomenon, which describes the fluorescence intermittency exhibited by a wide variety of nanoscale objects… (more)

Subjects/Keywords: Single Electron Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

George, H. C. (2011). Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/xw42n586g72

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

George, Hubert C. “Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>.” 2011. Thesis, University of Notre Dame. Accessed October 31, 2020. https://curate.nd.edu/show/xw42n586g72.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

George, Hubert C. “Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>.” 2011. Web. 31 Oct 2020.

Vancouver:

George HC. Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>. [Internet] [Thesis]. University of Notre Dame; 2011. [cited 2020 Oct 31]. Available from: https://curate.nd.edu/show/xw42n586g72.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

George HC. Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>. [Thesis]. University of Notre Dame; 2011. Available from: https://curate.nd.edu/show/xw42n586g72

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

27. Tachi, Kiichi. Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures.

Degree: Docteur es, Micro et nanoélectronique, 2011, Université de Grenoble

Il a été démontré que la structure gate-all-around en nanofils de silicium peut radicalement supprimer les effets de canaux courts. De plus, l'introduction d'espaceurs internes… (more)

Subjects/Keywords: Transistors CMOS; Transistor nanofils; Mobilité; Intégration 3D; CMOS transistors; Nanowire transistors; Mobility; 3D integration; 620

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tachi, K. (2011). Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENT084

Chicago Manual of Style (16th Edition):

Tachi, Kiichi. “Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed October 31, 2020. http://www.theses.fr/2011GRENT084.

MLA Handbook (7th Edition):

Tachi, Kiichi. “Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures.” 2011. Web. 31 Oct 2020.

Vancouver:

Tachi K. Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2020 Oct 31]. Available from: http://www.theses.fr/2011GRENT084.

Council of Science Editors:

Tachi K. Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENT084


University of Alberta

28. Doan, My The. Investigation of laterial transistor structures designed as magnetic field sensors.

Degree: MS, Department of Electrical Engineering, 1990, University of Alberta

Subjects/Keywords: Bipolar transistors.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Doan, M. T. (1990). Investigation of laterial transistor structures designed as magnetic field sensors. (Masters Thesis). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/6682x6093

Chicago Manual of Style (16th Edition):

Doan, My The. “Investigation of laterial transistor structures designed as magnetic field sensors.” 1990. Masters Thesis, University of Alberta. Accessed October 31, 2020. https://era.library.ualberta.ca/files/6682x6093.

MLA Handbook (7th Edition):

Doan, My The. “Investigation of laterial transistor structures designed as magnetic field sensors.” 1990. Web. 31 Oct 2020.

Vancouver:

Doan MT. Investigation of laterial transistor structures designed as magnetic field sensors. [Internet] [Masters thesis]. University of Alberta; 1990. [cited 2020 Oct 31]. Available from: https://era.library.ualberta.ca/files/6682x6093.

Council of Science Editors:

Doan MT. Investigation of laterial transistor structures designed as magnetic field sensors. [Masters Thesis]. University of Alberta; 1990. Available from: https://era.library.ualberta.ca/files/6682x6093

29. Williams, C. Lea. Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors.

Degree: MS, 1988, Oregon Health Sciences University

Subjects/Keywords: Bipolar transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Williams, C. L. (1988). Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors. (Thesis). Oregon Health Sciences University. Retrieved from doi:10.6083/M4MG7MF5 ; http://digitalcommons.ohsu.edu/etd/266

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Williams, C Lea. “Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors.” 1988. Thesis, Oregon Health Sciences University. Accessed October 31, 2020. doi:10.6083/M4MG7MF5 ; http://digitalcommons.ohsu.edu/etd/266.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Williams, C Lea. “Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors.” 1988. Web. 31 Oct 2020.

Vancouver:

Williams CL. Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors. [Internet] [Thesis]. Oregon Health Sciences University; 1988. [cited 2020 Oct 31]. Available from: doi:10.6083/M4MG7MF5 ; http://digitalcommons.ohsu.edu/etd/266.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Williams CL. Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors. [Thesis]. Oregon Health Sciences University; 1988. Available from: doi:10.6083/M4MG7MF5 ; http://digitalcommons.ohsu.edu/etd/266

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

30. Madani, Hassan. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.

Degree: 2013, Université M'Hamed Bougara Boumerdès

107 p. : ill. ; 30 cm

Le but de développer des méthodes de caractérisations fiables est de prévoir la dégradation des circuits intégrés fonctionnement… (more)

Subjects/Keywords: Irradiation; MOS (électronique); Transistors MOSFET

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Madani, H. (2013). Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080123456789/1463

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Madani, Hassan. “Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.” 2013. Thesis, Université M'Hamed Bougara Boumerdès. Accessed October 31, 2020. http://dlibrary.univ-boumerdes.dz:8080123456789/1463.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Madani, Hassan. “Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.” 2013. Web. 31 Oct 2020.

Vancouver:

Madani H. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2013. [cited 2020 Oct 31]. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1463.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Madani H. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. [Thesis]. Université M'Hamed Bougara Boumerdès; 2013. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1463

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2] [3] [4] [5] … [45]

.