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You searched for subject:(total ionizing dose TID ). Showing records 1 – 30 of 7321 total matches.

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Universidade do Rio Grande do Sul

1. Both, Thiago Hanna. Análise dos efeitos de dose total ionizante em transistores CMOS tecnologia 0,35 μm.

Degree: 2013, Universidade do Rio Grande do Sul

Este trabalho apresenta um estudo sobre a degradação de parâmetros elétricos de transistores CMOS tecnologia 0,35 μm, fabricados com o processo AMS C35B4, devido aos… (more)

Subjects/Keywords: Radiação ionizante; Ionizing radiation; TID; Cmos; Transistores; Total ionizing dose

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Both, T. H. (2013). Análise dos efeitos de dose total ionizante em transistores CMOS tecnologia 0,35 μm. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/115558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Both, Thiago Hanna. “Análise dos efeitos de dose total ionizante em transistores CMOS tecnologia 0,35 μm.” 2013. Thesis, Universidade do Rio Grande do Sul. Accessed September 19, 2020. http://hdl.handle.net/10183/115558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Both, Thiago Hanna. “Análise dos efeitos de dose total ionizante em transistores CMOS tecnologia 0,35 μm.” 2013. Web. 19 Sep 2020.

Vancouver:

Both TH. Análise dos efeitos de dose total ionizante em transistores CMOS tecnologia 0,35 μm. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2013. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/10183/115558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Both TH. Análise dos efeitos de dose total ionizante em transistores CMOS tecnologia 0,35 μm. [Thesis]. Universidade do Rio Grande do Sul; 2013. Available from: http://hdl.handle.net/10183/115558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

2. Gorchichko, Mariia. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.

Degree: MS, Electrical Engineering, 2019, Vanderbilt University

 Due to the advances in manufacturing and enhanced gate control of the transistor channel, FinFETs are commonly used in highly-scaled ICs. The geometry of the… (more)

Subjects/Keywords: FinFET; silicon-on-insulator (SOI); total ionizing dose (TID); low-frequency noise; random telegraph noise (RTN)

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APA (6th Edition):

Gorchichko, M. (2019). Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gorchichko, Mariia. “Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.” 2019. Thesis, Vanderbilt University. Accessed September 19, 2020. http://hdl.handle.net/1803/14529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gorchichko, Mariia. “Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.” 2019. Web. 19 Sep 2020.

Vancouver:

Gorchichko M. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. [Internet] [Thesis]. Vanderbilt University; 2019. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1803/14529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gorchichko M. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. [Thesis]. Vanderbilt University; 2019. Available from: http://hdl.handle.net/1803/14529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade do Rio Grande do Sul

3. Cardoso, Guilherme Schwanke. Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares.

Degree: 2012, Universidade do Rio Grande do Sul

Este trabalho estuda os efeitos de dose total ionizante (TIDTotal Ionizing Dose) em amplificadores operacionais e em seus blocos básicos de construção. A… (more)

Subjects/Keywords: Total ionizing dose (TID); Microeletrônica; Circuitos integrados; Radiation effects in analog circuits; Analog building blocks; Operational amplifiers; Threshold voltage deviations

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APA (6th Edition):

Cardoso, G. S. (2012). Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/61871

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cardoso, Guilherme Schwanke. “Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares.” 2012. Thesis, Universidade do Rio Grande do Sul. Accessed September 19, 2020. http://hdl.handle.net/10183/61871.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cardoso, Guilherme Schwanke. “Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares.” 2012. Web. 19 Sep 2020.

Vancouver:

Cardoso GS. Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2012. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/10183/61871.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cardoso GS. Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares. [Thesis]. Universidade do Rio Grande do Sul; 2012. Available from: http://hdl.handle.net/10183/61871

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

4. Omprakash, Anup. Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments.

Degree: PhD, Electrical and Computer Engineering, 2019, Georgia Tech

 Extreme environments pose unique challenges to all types of electronics. These extreme environments can cover a variety of different conditions, including, but not limited to,… (more)

Subjects/Keywords: Silicon-germanium; SiGe; High temperature; Analog circuits; Single-event effects; SEE; Total ionizing dose; TID; SOI; Reliability; Extreme environment; Radiation

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APA (6th Edition):

Omprakash, A. (2019). Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/63516

Chicago Manual of Style (16th Edition):

Omprakash, Anup. “Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments.” 2019. Doctoral Dissertation, Georgia Tech. Accessed September 19, 2020. http://hdl.handle.net/1853/63516.

MLA Handbook (7th Edition):

Omprakash, Anup. “Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments.” 2019. Web. 19 Sep 2020.

Vancouver:

Omprakash A. Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments. [Internet] [Doctoral dissertation]. Georgia Tech; 2019. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1853/63516.

Council of Science Editors:

Omprakash A. Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments. [Doctoral Dissertation]. Georgia Tech; 2019. Available from: http://hdl.handle.net/1853/63516


Vanderbilt University

5. Rezzak, Nadia. The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current.

Degree: MS, Electrical Engineering, 2010, Vanderbilt University

 Scaling of gate oxides in bulk complementary metal–oxide–semiconductor (CMOS) devices to thinner dimensions has reduced the significance of threshold-voltage shifts due to total-ionizing dose (TID)… (more)

Subjects/Keywords: Total ionizing dose

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APA (6th Edition):

Rezzak, N. (2010). The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/11845

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rezzak, Nadia. “The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current.” 2010. Thesis, Vanderbilt University. Accessed September 19, 2020. http://hdl.handle.net/1803/11845.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rezzak, Nadia. “The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current.” 2010. Web. 19 Sep 2020.

Vancouver:

Rezzak N. The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current. [Internet] [Thesis]. Vanderbilt University; 2010. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1803/11845.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rezzak N. The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current. [Thesis]. Vanderbilt University; 2010. Available from: http://hdl.handle.net/1803/11845

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade do Rio Grande do Sul

6. Balen, Tiago Roberto. Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção.

Degree: 2010, Universidade do Rio Grande do Sul

 Este trabalho estuda os efeitos da radiação em dispositivos analógicos programáveis (FPAAs, do inglês, Field Programmable Analog Arrays) e técnicas de proteção que podem ser… (more)

Subjects/Keywords: Single event upset (SEU); Circuitos eletrônicos; Total ionizing dose (TID) Field programmable analog arrays (FPAAs); Efeitos da radiação; Radiation effects; Circuitos analógicos; Radiação : Proteção; Self-checking; Radiation hardening techniques

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Balen, T. R. (2010). Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/27254

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Balen, Tiago Roberto. “Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção.” 2010. Thesis, Universidade do Rio Grande do Sul. Accessed September 19, 2020. http://hdl.handle.net/10183/27254.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Balen, Tiago Roberto. “Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção.” 2010. Web. 19 Sep 2020.

Vancouver:

Balen TR. Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2010. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/10183/27254.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Balen TR. Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção. [Thesis]. Universidade do Rio Grande do Sul; 2010. Available from: http://hdl.handle.net/10183/27254

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

7. Rezzak, Nadia. Total ionizing dose effects in advanced CMOS technologies.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

 Key aspects of the total-ionizing dose (TID) response of advanced complementary metal–oxide–semiconductor (CMOS) technologies are examined. As technology scales down, stress can strongly affect radiation-induced… (more)

Subjects/Keywords: Fully depleted SOI; Partially depleted SOI; Variability; total ionizing dose (TID); sidewall doping; shallow trench isolation (STI); MOSFET off-state leakage current; mechanical stress; Active space distance

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rezzak, N. (2012). Total ionizing dose effects in advanced CMOS technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/15330

Chicago Manual of Style (16th Edition):

Rezzak, Nadia. “Total ionizing dose effects in advanced CMOS technologies.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed September 19, 2020. http://hdl.handle.net/1803/15330.

MLA Handbook (7th Edition):

Rezzak, Nadia. “Total ionizing dose effects in advanced CMOS technologies.” 2012. Web. 19 Sep 2020.

Vancouver:

Rezzak N. Total ionizing dose effects in advanced CMOS technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1803/15330.

Council of Science Editors:

Rezzak N. Total ionizing dose effects in advanced CMOS technologies. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://hdl.handle.net/1803/15330


Vanderbilt University

8. Arutt, Charles Nathan. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 A T-shaped, asymmetric, piezoresistive, micromachined, resonating cantilever is used to investigate the effects of 10-keV X-rays on resonance frequency and resistivity. Total-ionizing-dose-induced resonance frequency and… (more)

Subjects/Keywords: Semiconductors; Ionizing Radiation; Total Ionizing Dose; X-rays; Silicon; Hydrogen; MEMS; Resonator; Piezoresistivity; Radiation Effects

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Arutt, C. N. (2018). Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/12340

Chicago Manual of Style (16th Edition):

Arutt, Charles Nathan. “Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed September 19, 2020. http://hdl.handle.net/1803/12340.

MLA Handbook (7th Edition):

Arutt, Charles Nathan. “Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.” 2018. Web. 19 Sep 2020.

Vancouver:

Arutt CN. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1803/12340.

Council of Science Editors:

Arutt CN. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://hdl.handle.net/1803/12340


Universidade do Rio Grande do Sul

9. Rossetto, Alan Carlos Junior. Análise dos efeitos de dose total ionizante em circuitos analógicos CMOS.

Degree: 2014, Universidade do Rio Grande do Sul

Este trabalho apresenta um estudo sobre o comportamento de circuitos analógicos CMOS quando sujeitos aos efeitos de dose total ionizante. Os efeitos de dose total(more)

Subjects/Keywords: Radiação ionizante; Analog circuits; Radiation; Cmos; Circuitos analógicos; Total ionizing dose

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rossetto, A. C. J. (2014). Análise dos efeitos de dose total ionizante em circuitos analógicos CMOS. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/115557

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rossetto, Alan Carlos Junior. “Análise dos efeitos de dose total ionizante em circuitos analógicos CMOS.” 2014. Thesis, Universidade do Rio Grande do Sul. Accessed September 19, 2020. http://hdl.handle.net/10183/115557.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rossetto, Alan Carlos Junior. “Análise dos efeitos de dose total ionizante em circuitos analógicos CMOS.” 2014. Web. 19 Sep 2020.

Vancouver:

Rossetto ACJ. Análise dos efeitos de dose total ionizante em circuitos analógicos CMOS. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2014. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/10183/115557.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rossetto ACJ. Análise dos efeitos de dose total ionizante em circuitos analógicos CMOS. [Thesis]. Universidade do Rio Grande do Sul; 2014. Available from: http://hdl.handle.net/10183/115557

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

10. Zhang, Xuan (Cher). Total ionizing dose radiation effects on germanium pMOS devices.

Degree: MS, Electrical Engineering, 2010, Vanderbilt University

 Radiation effects on Ge pMOS devices have been presented in this thesis. The irradiation and annealing responses of Ge pMOSFETs are investigated as a function… (more)

Subjects/Keywords: total ionizing dose; germanium

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APA (6th Edition):

Zhang, X. (. (2010). Total ionizing dose radiation effects on germanium pMOS devices. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/15327

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Xuan (Cher). “Total ionizing dose radiation effects on germanium pMOS devices.” 2010. Thesis, Vanderbilt University. Accessed September 19, 2020. http://hdl.handle.net/1803/15327.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Xuan (Cher). “Total ionizing dose radiation effects on germanium pMOS devices.” 2010. Web. 19 Sep 2020.

Vancouver:

Zhang X(. Total ionizing dose radiation effects on germanium pMOS devices. [Internet] [Thesis]. Vanderbilt University; 2010. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1803/15327.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang X(. Total ionizing dose radiation effects on germanium pMOS devices. [Thesis]. Vanderbilt University; 2010. Available from: http://hdl.handle.net/1803/15327

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade do Rio Grande do Sul

11. Tambara, Lucas Antunes. Caracterização de circuitos programáveis e sistemas em chip sob radiação.

Degree: 2013, Universidade do Rio Grande do Sul

Este trabalho consiste em um estudo acerca dos efeitos da radiação em circuitos programáveis e sistemas em chip, do inglês System-on-Chip (SoC), baseados em FPGAs… (more)

Subjects/Keywords: Efeitos da radiação; System-on-chips (SoCs); Field-programmable gate arrays (FPGAs); Tolerância a falhas; Tolerância à radiação; Fault tolerance; Radiation tolerance; SoC; Total ionizing dose (TID); Circuitos integrados; Single event effects (SEEs)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tambara, L. A. (2013). Caracterização de circuitos programáveis e sistemas em chip sob radiação. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/86477

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tambara, Lucas Antunes. “Caracterização de circuitos programáveis e sistemas em chip sob radiação.” 2013. Thesis, Universidade do Rio Grande do Sul. Accessed September 19, 2020. http://hdl.handle.net/10183/86477.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tambara, Lucas Antunes. “Caracterização de circuitos programáveis e sistemas em chip sob radiação.” 2013. Web. 19 Sep 2020.

Vancouver:

Tambara LA. Caracterização de circuitos programáveis e sistemas em chip sob radiação. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2013. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/10183/86477.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tambara LA. Caracterização de circuitos programáveis e sistemas em chip sob radiação. [Thesis]. Universidade do Rio Grande do Sul; 2013. Available from: http://hdl.handle.net/10183/86477

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

12. Rowsey, Nicole L. Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers.

Degree: PhD, Electrical and Computer Engineering, 2012, University of Florida

 The electrical breakdown of oxides and oxide/semiconductor interfaces is one of the main reasons for device failure in integrated circuits, especially devices under high-stress conditions.… (more)

Subjects/Keywords: Continuity equations; Dosage; Electrons; Hydrogen; Irradiation; Oxides; Oxygen; Protons; Silicon; Simulations; charge  – defect  – dose  – eldrs  – enhanced  – fixed  – floods  – flooxs  – glpnp  – interface  – ionizing  – low  – mediated  – nit  – not  – oxide  – rate  – sensitivity  – simulation  – tcad  – tid  – total  – transport  – traps

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rowsey, N. L. (2012). Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers. (Doctoral Dissertation). University of Florida. Retrieved from https://ufdc.ufl.edu/UFE0044042

Chicago Manual of Style (16th Edition):

Rowsey, Nicole L. “Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers.” 2012. Doctoral Dissertation, University of Florida. Accessed September 19, 2020. https://ufdc.ufl.edu/UFE0044042.

MLA Handbook (7th Edition):

Rowsey, Nicole L. “Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers.” 2012. Web. 19 Sep 2020.

Vancouver:

Rowsey NL. Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers. [Internet] [Doctoral dissertation]. University of Florida; 2012. [cited 2020 Sep 19]. Available from: https://ufdc.ufl.edu/UFE0044042.

Council of Science Editors:

Rowsey NL. Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers. [Doctoral Dissertation]. University of Florida; 2012. Available from: https://ufdc.ufl.edu/UFE0044042


Universidade do Rio Grande do Sul

13. Fusco, Daniel Alves. Efeitos da radiação ionizante e eventos singulares em circuitos analógicos de baixo e ultra baixo consumo.

Degree: 2016, Universidade do Rio Grande do Sul

Esse trabalho apresenta um estudo sobre os efeitos de radiação em circuitos analógicos de baixa e ultra baixa potência e tensão, identificando as fragilidades destes… (more)

Subjects/Keywords: Microelectronics; Circuitos analógicos; Low power; Simulação elétrica; Radiação ionizante; Ionizing radiation; Total dose; Single events

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fusco, D. A. (2016). Efeitos da radiação ionizante e eventos singulares em circuitos analógicos de baixo e ultra baixo consumo. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/147756

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Fusco, Daniel Alves. “Efeitos da radiação ionizante e eventos singulares em circuitos analógicos de baixo e ultra baixo consumo.” 2016. Thesis, Universidade do Rio Grande do Sul. Accessed September 19, 2020. http://hdl.handle.net/10183/147756.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Fusco, Daniel Alves. “Efeitos da radiação ionizante e eventos singulares em circuitos analógicos de baixo e ultra baixo consumo.” 2016. Web. 19 Sep 2020.

Vancouver:

Fusco DA. Efeitos da radiação ionizante e eventos singulares em circuitos analógicos de baixo e ultra baixo consumo. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2016. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/10183/147756.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Fusco DA. Efeitos da radiação ionizante e eventos singulares em circuitos analógicos de baixo e ultra baixo consumo. [Thesis]. Universidade do Rio Grande do Sul; 2016. Available from: http://hdl.handle.net/10183/147756

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

14. Zhang, Xuan (Cher). Reliability and irradiation effects of 4H-SiC MOS devices.

Degree: PhD, Electrical Engineering, 2013, Vanderbilt University

 Bias-temperature-instabilities (BTIs) and total ionizing dose effects are investigated for 4H-SiC MOS devices. Low frequency noise measurements are employed to help understand the nature of… (more)

Subjects/Keywords: bias temperature instabilities; SiC MOS devices; 1/f noise; total ionizing dose effects

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APA (6th Edition):

Zhang, X. (. (2013). Reliability and irradiation effects of 4H-SiC MOS devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/12164

Chicago Manual of Style (16th Edition):

Zhang, Xuan (Cher). “Reliability and irradiation effects of 4H-SiC MOS devices.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed September 19, 2020. http://hdl.handle.net/1803/12164.

MLA Handbook (7th Edition):

Zhang, Xuan (Cher). “Reliability and irradiation effects of 4H-SiC MOS devices.” 2013. Web. 19 Sep 2020.

Vancouver:

Zhang X(. Reliability and irradiation effects of 4H-SiC MOS devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1803/12164.

Council of Science Editors:

Zhang X(. Reliability and irradiation effects of 4H-SiC MOS devices. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://hdl.handle.net/1803/12164


Vanderbilt University

15. Diggins, Zachary John. System Health Awareness in Total-Ionizing Dose Environments.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 There is increasing interest in using commercial-off-the-shelf (COTS) electronics in radiation environments, such as robotic systems for remediation after the nuclear accident at Fukushima or… (more)

Subjects/Keywords: bayesian network; commercial-off-the-shelf; robotics; total-ionizing dose; radiation hardness assurance; radiation effects

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Diggins, Z. J. (2016). System Health Awareness in Total-Ionizing Dose Environments. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14697

Chicago Manual of Style (16th Edition):

Diggins, Zachary John. “System Health Awareness in Total-Ionizing Dose Environments.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed September 19, 2020. http://hdl.handle.net/1803/14697.

MLA Handbook (7th Edition):

Diggins, Zachary John. “System Health Awareness in Total-Ionizing Dose Environments.” 2016. Web. 19 Sep 2020.

Vancouver:

Diggins ZJ. System Health Awareness in Total-Ionizing Dose Environments. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1803/14697.

Council of Science Editors:

Diggins ZJ. System Health Awareness in Total-Ionizing Dose Environments. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://hdl.handle.net/1803/14697


Vanderbilt University

16. Wang, Pengfei. X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices.

Degree: MS, Electrical Engineering, 2017, Vanderbilt University

Total ionizing dose effects are investigated on a physically unclonable function (PUF) based on CMOS breakdown. Devices irradiated to 2.0 Mrad(SiO2) show less than 11%… (more)

Subjects/Keywords: X-ray; total ionizing dose; proton; oxide breakdown; physically unclonable function; hardware security

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APA (6th Edition):

Wang, P. (2017). X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14589

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Pengfei. “X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices.” 2017. Thesis, Vanderbilt University. Accessed September 19, 2020. http://hdl.handle.net/1803/14589.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Pengfei. “X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices.” 2017. Web. 19 Sep 2020.

Vancouver:

Wang P. X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. [Internet] [Thesis]. Vanderbilt University; 2017. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1803/14589.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang P. X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. [Thesis]. Vanderbilt University; 2017. Available from: http://hdl.handle.net/1803/14589

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université Montpellier II

17. Doridant, Adrien. Transistor bipolaire basse fréquence pour application spatiale et de défense soumis à une double agression onde électromagnétique : - dose Ionisante : Bipolar Transistor for Low Frequency Space Application and Defense subject to a double aggression Electromagnetic wave - Total Ionizing Dose.

Degree: Docteur es, Electronique, 2013, Université Montpellier II

Aujourd'hui les circuits intégrés commerciaux sont de plus en plus utilisés dans les satellites de télécommunication ou d'observation. En effet les contraintes économiques imposent l'usage… (more)

Subjects/Keywords: Transistor Bipolaire; Intérence champ proche; Dose ionisante; Susceptibilité Electromagnetique; Bipolar Transistor; Near-field Interference; Total Ionizing Dose; Electromagnetic Susceptibility

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APA (6th Edition):

Doridant, A. (2013). Transistor bipolaire basse fréquence pour application spatiale et de défense soumis à une double agression onde électromagnétique : - dose Ionisante : Bipolar Transistor for Low Frequency Space Application and Defense subject to a double aggression Electromagnetic wave - Total Ionizing Dose. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2012MON20058

Chicago Manual of Style (16th Edition):

Doridant, Adrien. “Transistor bipolaire basse fréquence pour application spatiale et de défense soumis à une double agression onde électromagnétique : - dose Ionisante : Bipolar Transistor for Low Frequency Space Application and Defense subject to a double aggression Electromagnetic wave - Total Ionizing Dose.” 2013. Doctoral Dissertation, Université Montpellier II. Accessed September 19, 2020. http://www.theses.fr/2012MON20058.

MLA Handbook (7th Edition):

Doridant, Adrien. “Transistor bipolaire basse fréquence pour application spatiale et de défense soumis à une double agression onde électromagnétique : - dose Ionisante : Bipolar Transistor for Low Frequency Space Application and Defense subject to a double aggression Electromagnetic wave - Total Ionizing Dose.” 2013. Web. 19 Sep 2020.

Vancouver:

Doridant A. Transistor bipolaire basse fréquence pour application spatiale et de défense soumis à une double agression onde électromagnétique : - dose Ionisante : Bipolar Transistor for Low Frequency Space Application and Defense subject to a double aggression Electromagnetic wave - Total Ionizing Dose. [Internet] [Doctoral dissertation]. Université Montpellier II; 2013. [cited 2020 Sep 19]. Available from: http://www.theses.fr/2012MON20058.

Council of Science Editors:

Doridant A. Transistor bipolaire basse fréquence pour application spatiale et de défense soumis à une double agression onde électromagnétique : - dose Ionisante : Bipolar Transistor for Low Frequency Space Application and Defense subject to a double aggression Electromagnetic wave - Total Ionizing Dose. [Doctoral Dissertation]. Université Montpellier II; 2013. Available from: http://www.theses.fr/2012MON20058

18. Rostand, Neil. Modélisation compacte de l'effet des radiations naturelles des dispositifs sub-28nm pour des applications automobiles et aéronautiques : Compact modeling of the effect of natural radiations on sub-28nm devices for aeronautic and automobile application.

Degree: Docteur es, Micro et nanosystèmes, 2019, Toulouse, ISAE

L’objectif de cette thèse était le développement de modèles SET (Single Event Transient) et TID (Total Ionizing Dose) pour les MOSFETs de technologies fortement intégrées,… (more)

Subjects/Keywords: Modélisation; MOSFET; Effets transitoires singuliers; Effet de dose cumulée; Modeling; MOSFET; Single event effects; Total ionizing dose

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APA (6th Edition):

Rostand, N. (2019). Modélisation compacte de l'effet des radiations naturelles des dispositifs sub-28nm pour des applications automobiles et aéronautiques : Compact modeling of the effect of natural radiations on sub-28nm devices for aeronautic and automobile application. (Doctoral Dissertation). Toulouse, ISAE. Retrieved from http://www.theses.fr/2019ESAE0035

Chicago Manual of Style (16th Edition):

Rostand, Neil. “Modélisation compacte de l'effet des radiations naturelles des dispositifs sub-28nm pour des applications automobiles et aéronautiques : Compact modeling of the effect of natural radiations on sub-28nm devices for aeronautic and automobile application.” 2019. Doctoral Dissertation, Toulouse, ISAE. Accessed September 19, 2020. http://www.theses.fr/2019ESAE0035.

MLA Handbook (7th Edition):

Rostand, Neil. “Modélisation compacte de l'effet des radiations naturelles des dispositifs sub-28nm pour des applications automobiles et aéronautiques : Compact modeling of the effect of natural radiations on sub-28nm devices for aeronautic and automobile application.” 2019. Web. 19 Sep 2020.

Vancouver:

Rostand N. Modélisation compacte de l'effet des radiations naturelles des dispositifs sub-28nm pour des applications automobiles et aéronautiques : Compact modeling of the effect of natural radiations on sub-28nm devices for aeronautic and automobile application. [Internet] [Doctoral dissertation]. Toulouse, ISAE; 2019. [cited 2020 Sep 19]. Available from: http://www.theses.fr/2019ESAE0035.

Council of Science Editors:

Rostand N. Modélisation compacte de l'effet des radiations naturelles des dispositifs sub-28nm pour des applications automobiles et aéronautiques : Compact modeling of the effect of natural radiations on sub-28nm devices for aeronautic and automobile application. [Doctoral Dissertation]. Toulouse, ISAE; 2019. Available from: http://www.theses.fr/2019ESAE0035


Vanderbilt University

19. El Mamouni, Farah. New insights into the total dose response of fully-depleted planar and FinFET SOI transistors.

Degree: MS, Electrical Engineering, 2009, Vanderbilt University

 In this thesis, we examine the total dose response of planar fully depleted planar SOI MOSFETs fabricated in a FinFET technology as functions of both… (more)

Subjects/Keywords: Band-to-Band Tunneling (BBT); Fully-Depleted Silicon-on-Insulator (FDSOI); Gate induced Drain Leakage Current (GIDL); Total Ionizing Dose (TID); FinFETs; MOSFETs

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APA (6th Edition):

El Mamouni, F. (2009). New insights into the total dose response of fully-depleted planar and FinFET SOI transistors. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/11741

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

El Mamouni, Farah. “New insights into the total dose response of fully-depleted planar and FinFET SOI transistors.” 2009. Thesis, Vanderbilt University. Accessed September 19, 2020. http://hdl.handle.net/1803/11741.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

El Mamouni, Farah. “New insights into the total dose response of fully-depleted planar and FinFET SOI transistors.” 2009. Web. 19 Sep 2020.

Vancouver:

El Mamouni F. New insights into the total dose response of fully-depleted planar and FinFET SOI transistors. [Internet] [Thesis]. Vanderbilt University; 2009. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1803/11741.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

El Mamouni F. New insights into the total dose response of fully-depleted planar and FinFET SOI transistors. [Thesis]. Vanderbilt University; 2009. Available from: http://hdl.handle.net/1803/11741

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

20. Ni, Kai. A fully embedded Silicon On Insulator Total Ionizing Dose monitor.

Degree: MS, Electrical Engineering, 2013, Vanderbilt University

Total ionizing dose (TID) effect is a kind of radiation effects. It’s related with the charge build up in the insulator caused by the radiation.… (more)

Subjects/Keywords: silicon on insulator; buried oxide; threshold voltage shift; leakage current; current controlled oscillator; total ionizing dose

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APA (6th Edition):

Ni, K. (2013). A fully embedded Silicon On Insulator Total Ionizing Dose monitor. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/13740

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ni, Kai. “A fully embedded Silicon On Insulator Total Ionizing Dose monitor.” 2013. Thesis, Vanderbilt University. Accessed September 19, 2020. http://hdl.handle.net/1803/13740.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ni, Kai. “A fully embedded Silicon On Insulator Total Ionizing Dose monitor.” 2013. Web. 19 Sep 2020.

Vancouver:

Ni K. A fully embedded Silicon On Insulator Total Ionizing Dose monitor. [Internet] [Thesis]. Vanderbilt University; 2013. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1803/13740.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ni K. A fully embedded Silicon On Insulator Total Ionizing Dose monitor. [Thesis]. Vanderbilt University; 2013. Available from: http://hdl.handle.net/1803/13740

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

21. Liang, Chundong. Radiation effects and low frequency noise in black phosphorus transistors.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 Black phosphorus (BP) is a promising two-dimensional (2D) semiconductor material for future CMOS technology. Its tunable band gap from 0.3 eV in bulk samples to… (more)

Subjects/Keywords: black phosphorus transistors; radiation effects; low frequency noise; reliability; single event effect; total ionizing dose effect

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APA (6th Edition):

Liang, C. (2018). Radiation effects and low frequency noise in black phosphorus transistors. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/10545

Chicago Manual of Style (16th Edition):

Liang, Chundong. “Radiation effects and low frequency noise in black phosphorus transistors.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed September 19, 2020. http://hdl.handle.net/1803/10545.

MLA Handbook (7th Edition):

Liang, Chundong. “Radiation effects and low frequency noise in black phosphorus transistors.” 2018. Web. 19 Sep 2020.

Vancouver:

Liang C. Radiation effects and low frequency noise in black phosphorus transistors. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1803/10545.

Council of Science Editors:

Liang C. Radiation effects and low frequency noise in black phosphorus transistors. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://hdl.handle.net/1803/10545


Vanderbilt University

22. Ni, Kai. Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 With CMOS scaling continuing to sub-10 nm node, Si is approaching its physical limits. To enable further scaling, alternative channel materials with superior transport properties… (more)

Subjects/Keywords: charge collection; TCAD; parasitic bipolar transistor; pulsed laser; heavy ion; III-V MOSFET; single event transient; total ionizing dose

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APA (6th Edition):

Ni, K. (2016). Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14126

Chicago Manual of Style (16th Edition):

Ni, Kai. “Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed September 19, 2020. http://hdl.handle.net/1803/14126.

MLA Handbook (7th Edition):

Ni, Kai. “Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS.” 2016. Web. 19 Sep 2020.

Vancouver:

Ni K. Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1803/14126.

Council of Science Editors:

Ni K. Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://hdl.handle.net/1803/14126


Universidade do Rio Grande do Sul

23. Grisales, Catalina Aguirre. Análises dos transistores de porta flutuante : modelamento e impacto do efeito de doses total ionizante.

Degree: 2013, Universidade do Rio Grande do Sul

Nesta dissertação é apresentado o estudo dos transistores de porta flutuante (Floating Gate Transistor - FG Transistor), sua modelagem, e a análise do efeito da… (more)

Subjects/Keywords: Floating gate transistor; Transistores; MOS transistor; Simulação numérica; Total ionizing dose; Threshold voltage; Charge retention; Capacitive coupling coefficient

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APA (6th Edition):

Grisales, C. A. (2013). Análises dos transistores de porta flutuante : modelamento e impacto do efeito de doses total ionizante. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/96480

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Grisales, Catalina Aguirre. “Análises dos transistores de porta flutuante : modelamento e impacto do efeito de doses total ionizante.” 2013. Thesis, Universidade do Rio Grande do Sul. Accessed September 19, 2020. http://hdl.handle.net/10183/96480.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Grisales, Catalina Aguirre. “Análises dos transistores de porta flutuante : modelamento e impacto do efeito de doses total ionizante.” 2013. Web. 19 Sep 2020.

Vancouver:

Grisales CA. Análises dos transistores de porta flutuante : modelamento e impacto do efeito de doses total ionizante. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2013. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/10183/96480.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Grisales CA. Análises dos transistores de porta flutuante : modelamento e impacto do efeito de doses total ionizante. [Thesis]. Universidade do Rio Grande do Sul; 2013. Available from: http://hdl.handle.net/10183/96480

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Arizona State University

24. Tolleson, Blayne S. Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors.

Degree: Electrical Engineering, 2017, Arizona State University

 A modeling platform for predicting total ionizing dose (TID) and dose rate response of commercial commercial-off-the-shelf (COTS) linear bipolar circuits and technologies is introduced. Tasks… (more)

Subjects/Keywords: Electrical engineering; base current; current gain; interface traps; lateral PNP bipolar junction transistor; surface recombination velocity; total ionizing dose

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APA (6th Edition):

Tolleson, B. S. (2017). Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/46303

Chicago Manual of Style (16th Edition):

Tolleson, Blayne S. “Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors.” 2017. Masters Thesis, Arizona State University. Accessed September 19, 2020. http://repository.asu.edu/items/46303.

MLA Handbook (7th Edition):

Tolleson, Blayne S. “Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors.” 2017. Web. 19 Sep 2020.

Vancouver:

Tolleson BS. Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. [Internet] [Masters thesis]. Arizona State University; 2017. [cited 2020 Sep 19]. Available from: http://repository.asu.edu/items/46303.

Council of Science Editors:

Tolleson BS. Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. [Masters Thesis]. Arizona State University; 2017. Available from: http://repository.asu.edu/items/46303


Universidade do Rio Grande do Sul

25. Aguilera, Carlos Julio González. Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade.

Degree: 2018, Universidade do Rio Grande do Sul

Este trabalho aborda um sistema de aquisição de dados (SAD) analógico-digital, baseado em um esquema redundante com diversidade de projeto, que é testado em dois… (more)

Subjects/Keywords: Ionizing radiation; Microeletrônica; Diversity; Radiação; Total ionizing dose; Single event effects; Triple modular redundancy; Mixed signals; Programmable system-on-chip; Analog-to-digital converters

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APA (6th Edition):

Aguilera, C. J. G. (2018). Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/179530

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Aguilera, Carlos Julio González. “Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade.” 2018. Thesis, Universidade do Rio Grande do Sul. Accessed September 19, 2020. http://hdl.handle.net/10183/179530.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Aguilera, Carlos Julio González. “Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade.” 2018. Web. 19 Sep 2020.

Vancouver:

Aguilera CJG. Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2018. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/10183/179530.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Aguilera CJG. Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade. [Thesis]. Universidade do Rio Grande do Sul; 2018. Available from: http://hdl.handle.net/10183/179530

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Lethbridge

26. Luzhna, Lidiya. Genetics and epigenetics of direct and indirect radiation responses in normal mammary and breast cancer cells .

Degree: 2014, University of Lethbridge

 The successful approach for decreasing breast cancer fatalities depends upon reliable diagnostic screening and optimal treatment modalities. Ionizing radiation is widely used for both screening… (more)

Subjects/Keywords: Ionizing radiation; High dose; Low dose; MCF-7 cells

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APA (6th Edition):

Luzhna, L. (2014). Genetics and epigenetics of direct and indirect radiation responses in normal mammary and breast cancer cells . (Thesis). University of Lethbridge. Retrieved from http://hdl.handle.net/10133/3619

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Luzhna, Lidiya. “Genetics and epigenetics of direct and indirect radiation responses in normal mammary and breast cancer cells .” 2014. Thesis, University of Lethbridge. Accessed September 19, 2020. http://hdl.handle.net/10133/3619.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Luzhna, Lidiya. “Genetics and epigenetics of direct and indirect radiation responses in normal mammary and breast cancer cells .” 2014. Web. 19 Sep 2020.

Vancouver:

Luzhna L. Genetics and epigenetics of direct and indirect radiation responses in normal mammary and breast cancer cells . [Internet] [Thesis]. University of Lethbridge; 2014. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/10133/3619.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Luzhna L. Genetics and epigenetics of direct and indirect radiation responses in normal mammary and breast cancer cells . [Thesis]. University of Lethbridge; 2014. Available from: http://hdl.handle.net/10133/3619

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University College Cork

27. Moloney, Fiachra. CT dose optimization with model based iterative reconstruction.

Degree: 2019, University College Cork

 The aim of this thesis is to assess the feasibility of using model-based iterative reconstruction (MBIR) to develop new low-dose CT (computed tomography) protocols in… (more)

Subjects/Keywords: Computed tomography; Iterative reconstruction; Acute abdomen; Ionizing radiation; Radiation dose

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Moloney, F. (2019). CT dose optimization with model based iterative reconstruction. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/7728

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Moloney, Fiachra. “CT dose optimization with model based iterative reconstruction.” 2019. Thesis, University College Cork. Accessed September 19, 2020. http://hdl.handle.net/10468/7728.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Moloney, Fiachra. “CT dose optimization with model based iterative reconstruction.” 2019. Web. 19 Sep 2020.

Vancouver:

Moloney F. CT dose optimization with model based iterative reconstruction. [Internet] [Thesis]. University College Cork; 2019. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/10468/7728.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Moloney F. CT dose optimization with model based iterative reconstruction. [Thesis]. University College Cork; 2019. Available from: http://hdl.handle.net/10468/7728

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Arizona State University

28. Schlenvogt, Garrett James. Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices.

Degree: MS, Electrical Engineering, 2010, Arizona State University

 Implantable medical device technology is commonly used by doctors for disease management, aiding to improve patient quality of life. However, it is possible for these… (more)

Subjects/Keywords: Electrical Engineering; charge pump; oxide-trapped charge; Radiation Effects; radiation hardening by design; Total Ionizing Dose

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Schlenvogt, G. J. (2010). Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/8683

Chicago Manual of Style (16th Edition):

Schlenvogt, Garrett James. “Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices.” 2010. Masters Thesis, Arizona State University. Accessed September 19, 2020. http://repository.asu.edu/items/8683.

MLA Handbook (7th Edition):

Schlenvogt, Garrett James. “Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices.” 2010. Web. 19 Sep 2020.

Vancouver:

Schlenvogt GJ. Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices. [Internet] [Masters thesis]. Arizona State University; 2010. [cited 2020 Sep 19]. Available from: http://repository.asu.edu/items/8683.

Council of Science Editors:

Schlenvogt GJ. Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices. [Masters Thesis]. Arizona State University; 2010. Available from: http://repository.asu.edu/items/8683


University of Florida

29. Park, Hyunwoo. Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation.

Degree: PhD, Electrical and Computer Engineering, 2011, University of Florida

 Uniaxial strained-silicon (Si) has emerged as a leading technique for enhancing transistor performance for sub-100 nm logic technology for use in commercial and consumer electronics.… (more)

Subjects/Keywords: Compressive stress; Diodes; Electric current; Electrons; Lasers; Mechanical stress; Simulations; Stress functions; Tensile stress; Threshold voltage; dielectrics  – effects  – events  – high-k  – radiation  – single  – strained-si  – stress  – total-ionizing-dose  – transients  – uniaxial

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Park, H. (2011). Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation. (Doctoral Dissertation). University of Florida. Retrieved from https://ufdc.ufl.edu/UFE0043566

Chicago Manual of Style (16th Edition):

Park, Hyunwoo. “Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation.” 2011. Doctoral Dissertation, University of Florida. Accessed September 19, 2020. https://ufdc.ufl.edu/UFE0043566.

MLA Handbook (7th Edition):

Park, Hyunwoo. “Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation.” 2011. Web. 19 Sep 2020.

Vancouver:

Park H. Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation. [Internet] [Doctoral dissertation]. University of Florida; 2011. [cited 2020 Sep 19]. Available from: https://ufdc.ufl.edu/UFE0043566.

Council of Science Editors:

Park H. Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation. [Doctoral Dissertation]. University of Florida; 2011. Available from: https://ufdc.ufl.edu/UFE0043566


Georgia Tech

30. Moen, Kurt Andrew. Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications.

Degree: MS, Electrical and Computer Engineering, 2008, Georgia Tech

 This work presents a summary of experimental data and theoretical models that characterize the temperature-dependent behavior of key carrier-transport parameters in silicon down to cryogenic… (more)

Subjects/Keywords: TID; Total dose effects; SRH; Ion strike; Lifetime spectroscopy; Minority carrier lifetime; Resistivity model; Mobility model; Low temperature engineering; Materials at low temperatures; Microwave circuits

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Moen, K. A. (2008). Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/26642

Chicago Manual of Style (16th Edition):

Moen, Kurt Andrew. “Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications.” 2008. Masters Thesis, Georgia Tech. Accessed September 19, 2020. http://hdl.handle.net/1853/26642.

MLA Handbook (7th Edition):

Moen, Kurt Andrew. “Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications.” 2008. Web. 19 Sep 2020.

Vancouver:

Moen KA. Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications. [Internet] [Masters thesis]. Georgia Tech; 2008. [cited 2020 Sep 19]. Available from: http://hdl.handle.net/1853/26642.

Council of Science Editors:

Moen KA. Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications. [Masters Thesis]. Georgia Tech; 2008. Available from: http://hdl.handle.net/1853/26642

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