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You searched for subject:(thin film transistors). Showing records 1 – 30 of 193 total matches.

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Oregon State University

1. Gorecki, Jenna Y. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.

Degree: MS, Chemical Engineering, 2016, Oregon State University

 Inkjet-printed p-type copper(I) iodide-based TFTs were successfully fabricated. As-printed copper(I) halide semiconductor films, such as CuI, CuBrI, and CuClI, were used as p-type active channel… (more)

Subjects/Keywords: Thin-Film Transistors; Thin film transistors

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APA (6th Edition):

Gorecki, J. Y. (2016). Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/59314

Chicago Manual of Style (16th Edition):

Gorecki, Jenna Y. “Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.” 2016. Masters Thesis, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/59314.

MLA Handbook (7th Edition):

Gorecki, Jenna Y. “Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.” 2016. Web. 05 Apr 2020.

Vancouver:

Gorecki JY. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. [Internet] [Masters thesis]. Oregon State University; 2016. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/59314.

Council of Science Editors:

Gorecki JY. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. [Masters Thesis]. Oregon State University; 2016. Available from: http://hdl.handle.net/1957/59314


Oregon State University

2. Sundholm, Eric Steven. Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment.

Degree: MS, Electrical and Computer Engineering, 2010, Oregon State University

 Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The… (more)

Subjects/Keywords: Thin-film transistor; Thin film transistors  – Materials

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APA (6th Edition):

Sundholm, E. S. (2010). Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/16365

Chicago Manual of Style (16th Edition):

Sundholm, Eric Steven. “Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment.” 2010. Masters Thesis, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/16365.

MLA Handbook (7th Edition):

Sundholm, Eric Steven. “Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment.” 2010. Web. 05 Apr 2020.

Vancouver:

Sundholm ES. Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment. [Internet] [Masters thesis]. Oregon State University; 2010. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/16365.

Council of Science Editors:

Sundholm ES. Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment. [Masters Thesis]. Oregon State University; 2010. Available from: http://hdl.handle.net/1957/16365


Oregon State University

3. Fang, Zhen. Iron Chalcogenide-based Thin Films Fabricated by Inkjet Printing.

Degree: MS, Chemical Engineering, 2015, Oregon State University

 Digital printing techniques offer several advantages in manufacturing electronics such as direct writing of materials, reduction of chemical waste, and scalability. In particular, printing can… (more)

Subjects/Keywords: Iron Chalcogenide; Thin film transistors

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APA (6th Edition):

Fang, Z. (2015). Iron Chalcogenide-based Thin Films Fabricated by Inkjet Printing. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/57722

Chicago Manual of Style (16th Edition):

Fang, Zhen. “Iron Chalcogenide-based Thin Films Fabricated by Inkjet Printing.” 2015. Masters Thesis, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/57722.

MLA Handbook (7th Edition):

Fang, Zhen. “Iron Chalcogenide-based Thin Films Fabricated by Inkjet Printing.” 2015. Web. 05 Apr 2020.

Vancouver:

Fang Z. Iron Chalcogenide-based Thin Films Fabricated by Inkjet Printing. [Internet] [Masters thesis]. Oregon State University; 2015. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/57722.

Council of Science Editors:

Fang Z. Iron Chalcogenide-based Thin Films Fabricated by Inkjet Printing. [Masters Thesis]. Oregon State University; 2015. Available from: http://hdl.handle.net/1957/57722


Oregon State University

4. Hoshino, Ken. Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs.

Degree: PhD, Electrical and Computer Engineering, 2012, Oregon State University

 Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment.… (more)

Subjects/Keywords: IGZO; Thin film transistors

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APA (6th Edition):

Hoshino, K. (2012). Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/30110

Chicago Manual of Style (16th Edition):

Hoshino, Ken. “Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs.” 2012. Doctoral Dissertation, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/30110.

MLA Handbook (7th Edition):

Hoshino, Ken. “Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs.” 2012. Web. 05 Apr 2020.

Vancouver:

Hoshino K. Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs. [Internet] [Doctoral dissertation]. Oregon State University; 2012. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/30110.

Council of Science Editors:

Hoshino K. Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs. [Doctoral Dissertation]. Oregon State University; 2012. Available from: http://hdl.handle.net/1957/30110


University of Hong Kong

5. 宋家琪; Song, Jiaqi. Amorphous InGaZnO thin-film transistor with optimized high-k gate dielectric.

Degree: PhD, 2017, University of Hong Kong

 In recent years, amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) has been drawing worldwide attention for being an excellent candidate for driving the pixels in next-generation… (more)

Subjects/Keywords: Dielectric devices; Thin film transistors

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APA (6th Edition):

宋家琪; Song, J. (2017). Amorphous InGaZnO thin-film transistor with optimized high-k gate dielectric. (Doctoral Dissertation). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/244339

Chicago Manual of Style (16th Edition):

宋家琪; Song, Jiaqi. “Amorphous InGaZnO thin-film transistor with optimized high-k gate dielectric.” 2017. Doctoral Dissertation, University of Hong Kong. Accessed April 05, 2020. http://hdl.handle.net/10722/244339.

MLA Handbook (7th Edition):

宋家琪; Song, Jiaqi. “Amorphous InGaZnO thin-film transistor with optimized high-k gate dielectric.” 2017. Web. 05 Apr 2020.

Vancouver:

宋家琪; Song J. Amorphous InGaZnO thin-film transistor with optimized high-k gate dielectric. [Internet] [Doctoral dissertation]. University of Hong Kong; 2017. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/10722/244339.

Council of Science Editors:

宋家琪; Song J. Amorphous InGaZnO thin-film transistor with optimized high-k gate dielectric. [Doctoral Dissertation]. University of Hong Kong; 2017. Available from: http://hdl.handle.net/10722/244339


University of Hong Kong

6. Qian, Lingxuan. Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric.

Degree: PhD, 2014, University of Hong Kong

 In general, La-based high-k gate dielectric owns superior properties to offer transistor excellent characteristics. Thus, amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric has… (more)

Subjects/Keywords: Thin film transistors; Dielectric devices

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APA (6th Edition):

Qian, L. (2014). Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. (Doctoral Dissertation). University of Hong Kong. Retrieved from Qian, L. [钱凌轩]. (2014). Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5317022 ; http://dx.doi.org/10.5353/th_b5317022 ; http://hdl.handle.net/10722/206467

Chicago Manual of Style (16th Edition):

Qian, Lingxuan. “Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric.” 2014. Doctoral Dissertation, University of Hong Kong. Accessed April 05, 2020. Qian, L. [钱凌轩]. (2014). Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5317022 ; http://dx.doi.org/10.5353/th_b5317022 ; http://hdl.handle.net/10722/206467.

MLA Handbook (7th Edition):

Qian, Lingxuan. “Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric.” 2014. Web. 05 Apr 2020.

Vancouver:

Qian L. Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. [Internet] [Doctoral dissertation]. University of Hong Kong; 2014. [cited 2020 Apr 05]. Available from: Qian, L. [钱凌轩]. (2014). Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5317022 ; http://dx.doi.org/10.5353/th_b5317022 ; http://hdl.handle.net/10722/206467.

Council of Science Editors:

Qian L. Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. [Doctoral Dissertation]. University of Hong Kong; 2014. Available from: Qian, L. [钱凌轩]. (2014). Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5317022 ; http://dx.doi.org/10.5353/th_b5317022 ; http://hdl.handle.net/10722/206467


Oregon State University

7. Hoshino, Ken. Instability and temperature-dependence assessment of IGZO TFTs.

Degree: MS, Electrical and Computer Engineering, 2008, Oregon State University

 Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under… (more)

Subjects/Keywords: IGZO; Thin film transistors

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APA (6th Edition):

Hoshino, K. (2008). Instability and temperature-dependence assessment of IGZO TFTs. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/9726

Chicago Manual of Style (16th Edition):

Hoshino, Ken. “Instability and temperature-dependence assessment of IGZO TFTs.” 2008. Masters Thesis, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/9726.

MLA Handbook (7th Edition):

Hoshino, Ken. “Instability and temperature-dependence assessment of IGZO TFTs.” 2008. Web. 05 Apr 2020.

Vancouver:

Hoshino K. Instability and temperature-dependence assessment of IGZO TFTs. [Internet] [Masters thesis]. Oregon State University; 2008. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/9726.

Council of Science Editors:

Hoshino K. Instability and temperature-dependence assessment of IGZO TFTs. [Masters Thesis]. Oregon State University; 2008. Available from: http://hdl.handle.net/1957/9726


Delft University of Technology

8. Aguirre, D.P. Simulation and Fabrication of a-IGZO Flexible vertical TFTs:.

Degree: 2013, Delft University of Technology

 The aim of this thesis is to design, simulate, fabricate and characterize Flexible Vertical Thin Film Transistor (TFT). Flexible Vertical Thin Film Transistors would allow… (more)

Subjects/Keywords: vertical flexible thin film transistors

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APA (6th Edition):

Aguirre, D. P. (2013). Simulation and Fabrication of a-IGZO Flexible vertical TFTs:. (Masters Thesis). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:074964fa-e4aa-49a3-a74e-7c6c2fd5222b

Chicago Manual of Style (16th Edition):

Aguirre, D P. “Simulation and Fabrication of a-IGZO Flexible vertical TFTs:.” 2013. Masters Thesis, Delft University of Technology. Accessed April 05, 2020. http://resolver.tudelft.nl/uuid:074964fa-e4aa-49a3-a74e-7c6c2fd5222b.

MLA Handbook (7th Edition):

Aguirre, D P. “Simulation and Fabrication of a-IGZO Flexible vertical TFTs:.” 2013. Web. 05 Apr 2020.

Vancouver:

Aguirre DP. Simulation and Fabrication of a-IGZO Flexible vertical TFTs:. [Internet] [Masters thesis]. Delft University of Technology; 2013. [cited 2020 Apr 05]. Available from: http://resolver.tudelft.nl/uuid:074964fa-e4aa-49a3-a74e-7c6c2fd5222b.

Council of Science Editors:

Aguirre DP. Simulation and Fabrication of a-IGZO Flexible vertical TFTs:. [Masters Thesis]. Delft University of Technology; 2013. Available from: http://resolver.tudelft.nl/uuid:074964fa-e4aa-49a3-a74e-7c6c2fd5222b


Rutgers University

9. Hong, Wen-Chiang, 1983-. Magnesium zinc oxide high voltage thin film transistors.

Degree: PhD, Electrical and Computer Engineering, 2017, Rutgers University

 Energy is one of the most important topics in the 21st century, and solar energy has been a leading technology in the search to replace… (more)

Subjects/Keywords: Thin film transistors; Solar energy

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APA (6th Edition):

Hong, Wen-Chiang, 1. (2017). Magnesium zinc oxide high voltage thin film transistors. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/53631/

Chicago Manual of Style (16th Edition):

Hong, Wen-Chiang, 1983-. “Magnesium zinc oxide high voltage thin film transistors.” 2017. Doctoral Dissertation, Rutgers University. Accessed April 05, 2020. https://rucore.libraries.rutgers.edu/rutgers-lib/53631/.

MLA Handbook (7th Edition):

Hong, Wen-Chiang, 1983-. “Magnesium zinc oxide high voltage thin film transistors.” 2017. Web. 05 Apr 2020.

Vancouver:

Hong, Wen-Chiang 1. Magnesium zinc oxide high voltage thin film transistors. [Internet] [Doctoral dissertation]. Rutgers University; 2017. [cited 2020 Apr 05]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/53631/.

Council of Science Editors:

Hong, Wen-Chiang 1. Magnesium zinc oxide high voltage thin film transistors. [Doctoral Dissertation]. Rutgers University; 2017. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/53631/


Hong Kong University of Science and Technology

10. Chen, Rongsheng. Fabrication and characterization of compound thin-film transistors.

Degree: 2013, Hong Kong University of Science and Technology

 ZnO-based thin-film transistors (TFTs) have become attractive for use as driving devices in flat-panel display application, due to their high mobility and large area uniformity.… (more)

Subjects/Keywords: Thin film transistors ; Zinc oxide thin films

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APA (6th Edition):

Chen, R. (2013). Fabrication and characterization of compound thin-film transistors. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-7910 ; https://doi.org/10.14711/thesis-b1226954 ; http://repository.ust.hk/ir/bitstream/1783.1-7910/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Rongsheng. “Fabrication and characterization of compound thin-film transistors.” 2013. Thesis, Hong Kong University of Science and Technology. Accessed April 05, 2020. http://repository.ust.hk/ir/Record/1783.1-7910 ; https://doi.org/10.14711/thesis-b1226954 ; http://repository.ust.hk/ir/bitstream/1783.1-7910/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Rongsheng. “Fabrication and characterization of compound thin-film transistors.” 2013. Web. 05 Apr 2020.

Vancouver:

Chen R. Fabrication and characterization of compound thin-film transistors. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2013. [cited 2020 Apr 05]. Available from: http://repository.ust.hk/ir/Record/1783.1-7910 ; https://doi.org/10.14711/thesis-b1226954 ; http://repository.ust.hk/ir/bitstream/1783.1-7910/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen R. Fabrication and characterization of compound thin-film transistors. [Thesis]. Hong Kong University of Science and Technology; 2013. Available from: http://repository.ust.hk/ir/Record/1783.1-7910 ; https://doi.org/10.14711/thesis-b1226954 ; http://repository.ust.hk/ir/bitstream/1783.1-7910/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

11. Sun, Yin. Fabrication and characterization of solution processed organic thin film transistors.

Degree: 2015, Hong Kong University of Science and Technology

 The processing ability of organic semiconductors from the liquid phase facilitates the development of large scale, low cost organic electronics on various substrates. An organic… (more)

Subjects/Keywords: Thin film transistors ; Organic thin films

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APA (6th Edition):

Sun, Y. (2015). Fabrication and characterization of solution processed organic thin film transistors. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-78825 ; https://doi.org/10.14711/thesis-b1514552 ; http://repository.ust.hk/ir/bitstream/1783.1-78825/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sun, Yin. “Fabrication and characterization of solution processed organic thin film transistors.” 2015. Thesis, Hong Kong University of Science and Technology. Accessed April 05, 2020. http://repository.ust.hk/ir/Record/1783.1-78825 ; https://doi.org/10.14711/thesis-b1514552 ; http://repository.ust.hk/ir/bitstream/1783.1-78825/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sun, Yin. “Fabrication and characterization of solution processed organic thin film transistors.” 2015. Web. 05 Apr 2020.

Vancouver:

Sun Y. Fabrication and characterization of solution processed organic thin film transistors. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2015. [cited 2020 Apr 05]. Available from: http://repository.ust.hk/ir/Record/1783.1-78825 ; https://doi.org/10.14711/thesis-b1514552 ; http://repository.ust.hk/ir/bitstream/1783.1-78825/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sun Y. Fabrication and characterization of solution processed organic thin film transistors. [Thesis]. Hong Kong University of Science and Technology; 2015. Available from: http://repository.ust.hk/ir/Record/1783.1-78825 ; https://doi.org/10.14711/thesis-b1514552 ; http://repository.ust.hk/ir/bitstream/1783.1-78825/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

12. McFarlane, Brian Ross. Amorphous oxide semiconductors in circuit applications.

Degree: MS, Electrical and Computer Engineering, 2008, Oregon State University

 The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits… (more)

Subjects/Keywords: amorphous oxide semiconductors; Thin film transistors

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APA (6th Edition):

McFarlane, B. R. (2008). Amorphous oxide semiconductors in circuit applications. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/9529

Chicago Manual of Style (16th Edition):

McFarlane, Brian Ross. “Amorphous oxide semiconductors in circuit applications.” 2008. Masters Thesis, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/9529.

MLA Handbook (7th Edition):

McFarlane, Brian Ross. “Amorphous oxide semiconductors in circuit applications.” 2008. Web. 05 Apr 2020.

Vancouver:

McFarlane BR. Amorphous oxide semiconductors in circuit applications. [Internet] [Masters thesis]. Oregon State University; 2008. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/9529.

Council of Science Editors:

McFarlane BR. Amorphous oxide semiconductors in circuit applications. [Masters Thesis]. Oregon State University; 2008. Available from: http://hdl.handle.net/1957/9529


Oregon State University

13. Meyers, Stephen T. Aqueous chemistries for oxide electronics.

Degree: PhD, Chemistry, 2008, Oregon State University

 The variegated aqueous chemistries of metal cations are applied to the design and synthesis of non-toxic solution precursors suitable for additive printing of large-area oxide… (more)

Subjects/Keywords: Printed Electronics; Thin film transistors  – Materials

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APA (6th Edition):

Meyers, S. T. (2008). Aqueous chemistries for oxide electronics. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/9418

Chicago Manual of Style (16th Edition):

Meyers, Stephen T. “Aqueous chemistries for oxide electronics.” 2008. Doctoral Dissertation, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/9418.

MLA Handbook (7th Edition):

Meyers, Stephen T. “Aqueous chemistries for oxide electronics.” 2008. Web. 05 Apr 2020.

Vancouver:

Meyers ST. Aqueous chemistries for oxide electronics. [Internet] [Doctoral dissertation]. Oregon State University; 2008. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/9418.

Council of Science Editors:

Meyers ST. Aqueous chemistries for oxide electronics. [Doctoral Dissertation]. Oregon State University; 2008. Available from: http://hdl.handle.net/1957/9418


Oregon State University

14. Voss, Curtis L. Fabrication of a cadmium sulfide thin film transistor using chemical bath deposition.

Degree: MS, Chemical Engineering, 2002, Oregon State University

Subjects/Keywords: Thin film transistors

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APA (6th Edition):

Voss, C. L. (2002). Fabrication of a cadmium sulfide thin film transistor using chemical bath deposition. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/32061

Chicago Manual of Style (16th Edition):

Voss, Curtis L. “Fabrication of a cadmium sulfide thin film transistor using chemical bath deposition.” 2002. Masters Thesis, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/32061.

MLA Handbook (7th Edition):

Voss, Curtis L. “Fabrication of a cadmium sulfide thin film transistor using chemical bath deposition.” 2002. Web. 05 Apr 2020.

Vancouver:

Voss CL. Fabrication of a cadmium sulfide thin film transistor using chemical bath deposition. [Internet] [Masters thesis]. Oregon State University; 2002. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/32061.

Council of Science Editors:

Voss CL. Fabrication of a cadmium sulfide thin film transistor using chemical bath deposition. [Masters Thesis]. Oregon State University; 2002. Available from: http://hdl.handle.net/1957/32061


Oregon State University

15. Hung, Celia M. Contact resistance and stability assessment of oxide-based thin film transistors.

Degree: MS, Electrical and Computer Engineering, 2007, Oregon State University

 This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin… (more)

Subjects/Keywords: Thin film transistors

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APA (6th Edition):

Hung, C. M. (2007). Contact resistance and stability assessment of oxide-based thin film transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/3862

Chicago Manual of Style (16th Edition):

Hung, Celia M. “Contact resistance and stability assessment of oxide-based thin film transistors.” 2007. Masters Thesis, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/3862.

MLA Handbook (7th Edition):

Hung, Celia M. “Contact resistance and stability assessment of oxide-based thin film transistors.” 2007. Web. 05 Apr 2020.

Vancouver:

Hung CM. Contact resistance and stability assessment of oxide-based thin film transistors. [Internet] [Masters thesis]. Oregon State University; 2007. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/3862.

Council of Science Editors:

Hung CM. Contact resistance and stability assessment of oxide-based thin film transistors. [Masters Thesis]. Oregon State University; 2007. Available from: http://hdl.handle.net/1957/3862


Oregon State University

16. Heineck, Daniel Philip. Zinc tin oxide thin-film transistor circuits.

Degree: MS, Electrical and Computer Engineering, 2008, Oregon State University

 The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO)… (more)

Subjects/Keywords: zinc tin oxide; Thin film transistors

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APA (6th Edition):

Heineck, D. P. (2008). Zinc tin oxide thin-film transistor circuits. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/9975

Chicago Manual of Style (16th Edition):

Heineck, Daniel Philip. “Zinc tin oxide thin-film transistor circuits.” 2008. Masters Thesis, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/9975.

MLA Handbook (7th Edition):

Heineck, Daniel Philip. “Zinc tin oxide thin-film transistor circuits.” 2008. Web. 05 Apr 2020.

Vancouver:

Heineck DP. Zinc tin oxide thin-film transistor circuits. [Internet] [Masters thesis]. Oregon State University; 2008. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/9975.

Council of Science Editors:

Heineck DP. Zinc tin oxide thin-film transistor circuits. [Masters Thesis]. Oregon State University; 2008. Available from: http://hdl.handle.net/1957/9975


Oregon State University

17. Hong, David. Process development and modeling of thin-film transistors.

Degree: MS, Electrical and Computer Engineering, 2005, Oregon State University

Subjects/Keywords: Thin film transistors

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APA (6th Edition):

Hong, D. (2005). Process development and modeling of thin-film transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/22789

Chicago Manual of Style (16th Edition):

Hong, David. “Process development and modeling of thin-film transistors.” 2005. Masters Thesis, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/22789.

MLA Handbook (7th Edition):

Hong, David. “Process development and modeling of thin-film transistors.” 2005. Web. 05 Apr 2020.

Vancouver:

Hong D. Process development and modeling of thin-film transistors. [Internet] [Masters thesis]. Oregon State University; 2005. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/22789.

Council of Science Editors:

Hong D. Process development and modeling of thin-film transistors. [Masters Thesis]. Oregon State University; 2005. Available from: http://hdl.handle.net/1957/22789


Cornell University

18. Willemann, Michael. Transient Laser Annealing Of Zinc Oxide Nanoparticle Inks To Fabricate Zno Thin Film Transistors .

Degree: 2013, Cornell University

 Display technology, which relies exclusively on amorphous silicon as the active material for driver electronics, has reached multiple impasses that limit future progress. In order… (more)

Subjects/Keywords: Zinc Oxide; Laser Annealing; Thin Film Transistors

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APA (6th Edition):

Willemann, M. (2013). Transient Laser Annealing Of Zinc Oxide Nanoparticle Inks To Fabricate Zno Thin Film Transistors . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/34058

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Willemann, Michael. “Transient Laser Annealing Of Zinc Oxide Nanoparticle Inks To Fabricate Zno Thin Film Transistors .” 2013. Thesis, Cornell University. Accessed April 05, 2020. http://hdl.handle.net/1813/34058.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Willemann, Michael. “Transient Laser Annealing Of Zinc Oxide Nanoparticle Inks To Fabricate Zno Thin Film Transistors .” 2013. Web. 05 Apr 2020.

Vancouver:

Willemann M. Transient Laser Annealing Of Zinc Oxide Nanoparticle Inks To Fabricate Zno Thin Film Transistors . [Internet] [Thesis]. Cornell University; 2013. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1813/34058.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Willemann M. Transient Laser Annealing Of Zinc Oxide Nanoparticle Inks To Fabricate Zno Thin Film Transistors . [Thesis]. Cornell University; 2013. Available from: http://hdl.handle.net/1813/34058

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

19. Fakher, Sundes Juma. Advanced study of pentacene-based organic memory structures.

Degree: PhD, 2014, Bangor University

 A systematic approach has been used to optimise the fabrication process of pentacene-based nonvolatile organic thin film memory transistors (OTFMTs) operating at low programming voltages.… (more)

Subjects/Keywords: 004.568; Organic thin film, transistors, floating gate

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APA (6th Edition):

Fakher, S. J. (2014). Advanced study of pentacene-based organic memory structures. (Doctoral Dissertation). Bangor University. Retrieved from https://research.bangor.ac.uk/portal/en/theses/advanced-study-of-pentacenebased-organic-memory-structures(5319a571-2c4c-4f90-a26c-fa5e7da82cfb).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613637

Chicago Manual of Style (16th Edition):

Fakher, Sundes Juma. “Advanced study of pentacene-based organic memory structures.” 2014. Doctoral Dissertation, Bangor University. Accessed April 05, 2020. https://research.bangor.ac.uk/portal/en/theses/advanced-study-of-pentacenebased-organic-memory-structures(5319a571-2c4c-4f90-a26c-fa5e7da82cfb).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613637.

MLA Handbook (7th Edition):

Fakher, Sundes Juma. “Advanced study of pentacene-based organic memory structures.” 2014. Web. 05 Apr 2020.

Vancouver:

Fakher SJ. Advanced study of pentacene-based organic memory structures. [Internet] [Doctoral dissertation]. Bangor University; 2014. [cited 2020 Apr 05]. Available from: https://research.bangor.ac.uk/portal/en/theses/advanced-study-of-pentacenebased-organic-memory-structures(5319a571-2c4c-4f90-a26c-fa5e7da82cfb).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613637.

Council of Science Editors:

Fakher SJ. Advanced study of pentacene-based organic memory structures. [Doctoral Dissertation]. Bangor University; 2014. Available from: https://research.bangor.ac.uk/portal/en/theses/advanced-study-of-pentacenebased-organic-memory-structures(5319a571-2c4c-4f90-a26c-fa5e7da82cfb).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613637


Hong Kong University of Science and Technology

20. Kabir, Hussain Mohammed Dipu. A study on the grain dependent current variation of polycrystalline organic transistors.

Degree: 2016, Hong Kong University of Science and Technology

 The objective of the thesis is to study the current variation of the organic thin film transistor, to discuss current approaches towards aligning grains and… (more)

Subjects/Keywords: Organic thin films ; Electric properties ; Thin film transistors ; Materials ; Polycrystalline semiconductors

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APA (6th Edition):

Kabir, H. M. D. (2016). A study on the grain dependent current variation of polycrystalline organic transistors. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-87783 ; https://doi.org/10.14711/thesis-b1750019 ; http://repository.ust.hk/ir/bitstream/1783.1-87783/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kabir, Hussain Mohammed Dipu. “A study on the grain dependent current variation of polycrystalline organic transistors.” 2016. Thesis, Hong Kong University of Science and Technology. Accessed April 05, 2020. http://repository.ust.hk/ir/Record/1783.1-87783 ; https://doi.org/10.14711/thesis-b1750019 ; http://repository.ust.hk/ir/bitstream/1783.1-87783/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kabir, Hussain Mohammed Dipu. “A study on the grain dependent current variation of polycrystalline organic transistors.” 2016. Web. 05 Apr 2020.

Vancouver:

Kabir HMD. A study on the grain dependent current variation of polycrystalline organic transistors. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2016. [cited 2020 Apr 05]. Available from: http://repository.ust.hk/ir/Record/1783.1-87783 ; https://doi.org/10.14711/thesis-b1750019 ; http://repository.ust.hk/ir/bitstream/1783.1-87783/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kabir HMD. A study on the grain dependent current variation of polycrystalline organic transistors. [Thesis]. Hong Kong University of Science and Technology; 2016. Available from: http://repository.ust.hk/ir/Record/1783.1-87783 ; https://doi.org/10.14711/thesis-b1750019 ; http://repository.ust.hk/ir/bitstream/1783.1-87783/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

21. Chen, Min-Chen. Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices.

Degree: PhD, Physics, 2011, NSYSU

 In first part, the supercritical CO2 (SCCO2) fluid technology is employed to improve the device properties of ZnO TFT. The SCCO2 fluid exhibits liquid-like property,… (more)

Subjects/Keywords: Thin-Film Transistors (TFTs); Oxide thin film; Resistive Random Access Memory (RRAM)

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APA (6th Edition):

Chen, M. (2011). Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714111-132055

Chicago Manual of Style (16th Edition):

Chen, Min-Chen. “Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices.” 2011. Doctoral Dissertation, NSYSU. Accessed April 05, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714111-132055.

MLA Handbook (7th Edition):

Chen, Min-Chen. “Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices.” 2011. Web. 05 Apr 2020.

Vancouver:

Chen M. Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices. [Internet] [Doctoral dissertation]. NSYSU; 2011. [cited 2020 Apr 05]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714111-132055.

Council of Science Editors:

Chen M. Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices. [Doctoral Dissertation]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714111-132055


Hong Kong University of Science and Technology

22. Xiong, Zhibin. Novel scaled-down poly-Si thin-film transistor devices and technologies.

Degree: 2005, Hong Kong University of Science and Technology

 In recent years, polycrystalline silicon (polysilicon) thin film transistors (TFTs) have been actively investigated due to their relatively high field-effect mobility and high current driving… (more)

Subjects/Keywords: Thin film transistors ; Thin film devices

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APA (6th Edition):

Xiong, Z. (2005). Novel scaled-down poly-Si thin-film transistor devices and technologies. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-2659 ; https://doi.org/10.14711/thesis-b917838 ; http://repository.ust.hk/ir/bitstream/1783.1-2659/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Xiong, Zhibin. “Novel scaled-down poly-Si thin-film transistor devices and technologies.” 2005. Thesis, Hong Kong University of Science and Technology. Accessed April 05, 2020. http://repository.ust.hk/ir/Record/1783.1-2659 ; https://doi.org/10.14711/thesis-b917838 ; http://repository.ust.hk/ir/bitstream/1783.1-2659/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Xiong, Zhibin. “Novel scaled-down poly-Si thin-film transistor devices and technologies.” 2005. Web. 05 Apr 2020.

Vancouver:

Xiong Z. Novel scaled-down poly-Si thin-film transistor devices and technologies. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2005. [cited 2020 Apr 05]. Available from: http://repository.ust.hk/ir/Record/1783.1-2659 ; https://doi.org/10.14711/thesis-b917838 ; http://repository.ust.hk/ir/bitstream/1783.1-2659/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Xiong Z. Novel scaled-down poly-Si thin-film transistor devices and technologies. [Thesis]. Hong Kong University of Science and Technology; 2005. Available from: http://repository.ust.hk/ir/Record/1783.1-2659 ; https://doi.org/10.14711/thesis-b917838 ; http://repository.ust.hk/ir/bitstream/1783.1-2659/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

23. Zhou, Wei. Bridged-grain small grain low temperature polycrystalline silicon thin-film transistors for active matrix displays.

Degree: 2013, Hong Kong University of Science and Technology

 A new structure (dubbed bridged-grain, or BG for short) for thin-film transistors (TFTs), exhibiting the benefits but not the drawbacks of both the short-channel and… (more)

Subjects/Keywords: Thin film transistors ; Thin film devices ; Silicon ; Electric properties ; Polycrystals ; Electroluminescent display systems

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APA (6th Edition):

Zhou, W. (2013). Bridged-grain small grain low temperature polycrystalline silicon thin-film transistors for active matrix displays. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-92025 ; https://doi.org/10.14711/thesis-b1251114 ; http://repository.ust.hk/ir/bitstream/1783.1-92025/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhou, Wei. “Bridged-grain small grain low temperature polycrystalline silicon thin-film transistors for active matrix displays.” 2013. Thesis, Hong Kong University of Science and Technology. Accessed April 05, 2020. http://repository.ust.hk/ir/Record/1783.1-92025 ; https://doi.org/10.14711/thesis-b1251114 ; http://repository.ust.hk/ir/bitstream/1783.1-92025/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhou, Wei. “Bridged-grain small grain low temperature polycrystalline silicon thin-film transistors for active matrix displays.” 2013. Web. 05 Apr 2020.

Vancouver:

Zhou W. Bridged-grain small grain low temperature polycrystalline silicon thin-film transistors for active matrix displays. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2013. [cited 2020 Apr 05]. Available from: http://repository.ust.hk/ir/Record/1783.1-92025 ; https://doi.org/10.14711/thesis-b1251114 ; http://repository.ust.hk/ir/bitstream/1783.1-92025/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhou W. Bridged-grain small grain low temperature polycrystalline silicon thin-film transistors for active matrix displays. [Thesis]. Hong Kong University of Science and Technology; 2013. Available from: http://repository.ust.hk/ir/Record/1783.1-92025 ; https://doi.org/10.14711/thesis-b1251114 ; http://repository.ust.hk/ir/bitstream/1783.1-92025/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

24. Rajachidambaram, Jaana Saranya. Evaluation of amorphous oxide semiconductors for thin film transistors (TFTs) and resistive random access memory (RRAM) applications.

Degree: MS, Chemical Engineering, 2011, Oregon State University

Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal displays. Currently, amorphous silicon is the dominant TFT technology for displays, but… (more)

Subjects/Keywords: non volatile memory; High-resistance states; Thin film transistors

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APA (6th Edition):

Rajachidambaram, J. S. (2011). Evaluation of amorphous oxide semiconductors for thin film transistors (TFTs) and resistive random access memory (RRAM) applications. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/26517

Chicago Manual of Style (16th Edition):

Rajachidambaram, Jaana Saranya. “Evaluation of amorphous oxide semiconductors for thin film transistors (TFTs) and resistive random access memory (RRAM) applications.” 2011. Masters Thesis, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/26517.

MLA Handbook (7th Edition):

Rajachidambaram, Jaana Saranya. “Evaluation of amorphous oxide semiconductors for thin film transistors (TFTs) and resistive random access memory (RRAM) applications.” 2011. Web. 05 Apr 2020.

Vancouver:

Rajachidambaram JS. Evaluation of amorphous oxide semiconductors for thin film transistors (TFTs) and resistive random access memory (RRAM) applications. [Internet] [Masters thesis]. Oregon State University; 2011. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/26517.

Council of Science Editors:

Rajachidambaram JS. Evaluation of amorphous oxide semiconductors for thin film transistors (TFTs) and resistive random access memory (RRAM) applications. [Masters Thesis]. Oregon State University; 2011. Available from: http://hdl.handle.net/1957/26517


University of Hong Kong

25. 柯展東; Or, Chin-tung, David. Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation.

Degree: M. Phil., 2002, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Master

Master of Philosophy

Advisors/Committee Members: Lai, PT.

Subjects/Keywords: Thin film transistors.; Dielectrics.

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APA (6th Edition):

柯展東; Or, Chin-tung, D. (2002). Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. (Masters Thesis). University of Hong Kong. Retrieved from Or, C. D. [柯展東]. (2002). Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122659 ; http://dx.doi.org/10.5353/th_b3122659 ; http://hdl.handle.net/10722/33659

Chicago Manual of Style (16th Edition):

柯展東; Or, Chin-tung, David. “Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation.” 2002. Masters Thesis, University of Hong Kong. Accessed April 05, 2020. Or, C. D. [柯展東]. (2002). Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122659 ; http://dx.doi.org/10.5353/th_b3122659 ; http://hdl.handle.net/10722/33659.

MLA Handbook (7th Edition):

柯展東; Or, Chin-tung, David. “Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation.” 2002. Web. 05 Apr 2020.

Vancouver:

柯展東; Or, Chin-tung D. Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. [Internet] [Masters thesis]. University of Hong Kong; 2002. [cited 2020 Apr 05]. Available from: Or, C. D. [柯展東]. (2002). Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122659 ; http://dx.doi.org/10.5353/th_b3122659 ; http://hdl.handle.net/10722/33659.

Council of Science Editors:

柯展東; Or, Chin-tung D. Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. [Masters Thesis]. University of Hong Kong; 2002. Available from: Or, C. D. [柯展東]. (2002). Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122659 ; http://dx.doi.org/10.5353/th_b3122659 ; http://hdl.handle.net/10722/33659

26. Motley, Joshua R. Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors.

Degree: MS, Chemical Engineering, 2016, Oregon State University

 Investigations on the application of self-assembled monolayers (SAM) to indium gallium zinc oxide (IGZO) thin film transistors (TFT) for fabrication and channel modification are presented.… (more)

Subjects/Keywords: IGZO; Thin film transistors

…1 Thin Film Transistors… …8 Fabrication of Thin Film Transistors… …47 Chapter 4: Patterning of IGZO Thin Film Transistors Using Electrohydrodynamic Ink Jet… …and flexible displays [4], [7]. Thin Film Transistors Transistors are a… …ntype devices will be discussed from this point on. Thin film transistors (TFT) are… 

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APA (6th Edition):

Motley, J. R. (2016). Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/59359

Chicago Manual of Style (16th Edition):

Motley, Joshua R. “Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors.” 2016. Masters Thesis, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/59359.

MLA Handbook (7th Edition):

Motley, Joshua R. “Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors.” 2016. Web. 05 Apr 2020.

Vancouver:

Motley JR. Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors. [Internet] [Masters thesis]. Oregon State University; 2016. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/59359.

Council of Science Editors:

Motley JR. Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors. [Masters Thesis]. Oregon State University; 2016. Available from: http://hdl.handle.net/1957/59359


Rochester Institute of Technology

27. Rettmann, Ryan. Development of low temperature oxidation for crystalline silicon thin film transistor applications.

Degree: Microelectronic Engineering, 2011, Rochester Institute of Technology

 Development of thin-film transistor (TFT) backplane technologies has traditionally been limited by the substrate materials used; amorphous (a-Si) or polycrystalline (p-Si) silicon on glass. These… (more)

Subjects/Keywords: CMOS; Display; Low-temperature; Oxidation; Thin film transistors

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APA (6th Edition):

Rettmann, R. (2011). Development of low temperature oxidation for crystalline silicon thin film transistor applications. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/7169

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rettmann, Ryan. “Development of low temperature oxidation for crystalline silicon thin film transistor applications.” 2011. Thesis, Rochester Institute of Technology. Accessed April 05, 2020. https://scholarworks.rit.edu/theses/7169.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rettmann, Ryan. “Development of low temperature oxidation for crystalline silicon thin film transistor applications.” 2011. Web. 05 Apr 2020.

Vancouver:

Rettmann R. Development of low temperature oxidation for crystalline silicon thin film transistor applications. [Internet] [Thesis]. Rochester Institute of Technology; 2011. [cited 2020 Apr 05]. Available from: https://scholarworks.rit.edu/theses/7169.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rettmann R. Development of low temperature oxidation for crystalline silicon thin film transistor applications. [Thesis]. Rochester Institute of Technology; 2011. Available from: https://scholarworks.rit.edu/theses/7169

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

28. Spiegelberg, Matthew Craig. Modeling and development of p-type thin-film transistors.

Degree: MS, Electrical and Computer Engineering, 2005, Oregon State University

 The primary focus of this thesis involves modeling and development of p-type thin-film transistors (p-TFTs), moving towards the realization of a filly transparent thin-film transistor… (more)

Subjects/Keywords: Thin film transistors  – Mathematical models

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APA (6th Edition):

Spiegelberg, M. C. (2005). Modeling and development of p-type thin-film transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/22545

Chicago Manual of Style (16th Edition):

Spiegelberg, Matthew Craig. “Modeling and development of p-type thin-film transistors.” 2005. Masters Thesis, Oregon State University. Accessed April 05, 2020. http://hdl.handle.net/1957/22545.

MLA Handbook (7th Edition):

Spiegelberg, Matthew Craig. “Modeling and development of p-type thin-film transistors.” 2005. Web. 05 Apr 2020.

Vancouver:

Spiegelberg MC. Modeling and development of p-type thin-film transistors. [Internet] [Masters thesis]. Oregon State University; 2005. [cited 2020 Apr 05]. Available from: http://hdl.handle.net/1957/22545.

Council of Science Editors:

Spiegelberg MC. Modeling and development of p-type thin-film transistors. [Masters Thesis]. Oregon State University; 2005. Available from: http://hdl.handle.net/1957/22545

29. Qian, Feng. Thin film transistors in polysilicon.

Degree: PhD, 1988, Oregon Health Sciences University

Subjects/Keywords: Transistors; Thin film devices

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Qian, F. (1988). Thin film transistors in polysilicon. (Doctoral Dissertation). Oregon Health Sciences University. Retrieved from doi:10.6083/M4HQ3WVT ; http://digitalcommons.ohsu.edu/etd/259

Chicago Manual of Style (16th Edition):

Qian, Feng. “Thin film transistors in polysilicon.” 1988. Doctoral Dissertation, Oregon Health Sciences University. Accessed April 05, 2020. doi:10.6083/M4HQ3WVT ; http://digitalcommons.ohsu.edu/etd/259.

MLA Handbook (7th Edition):

Qian, Feng. “Thin film transistors in polysilicon.” 1988. Web. 05 Apr 2020.

Vancouver:

Qian F. Thin film transistors in polysilicon. [Internet] [Doctoral dissertation]. Oregon Health Sciences University; 1988. [cited 2020 Apr 05]. Available from: doi:10.6083/M4HQ3WVT ; http://digitalcommons.ohsu.edu/etd/259.

Council of Science Editors:

Qian F. Thin film transistors in polysilicon. [Doctoral Dissertation]. Oregon Health Sciences University; 1988. Available from: doi:10.6083/M4HQ3WVT ; http://digitalcommons.ohsu.edu/etd/259


McGill University

30. MacNab, Finlay. Thin film transistors from II-IV semiconductors on polymer substrates.

Degree: MS, Department of Chemistry., 2006, McGill University

 A chemical bath deposition technique has been used in the fabrication of thin film transistors (TFT), which have been deposited on a 200mum polymer substrate.… (more)

Subjects/Keywords: Thin film transistors.; Electronic polymers.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

MacNab, F. (2006). Thin film transistors from II-IV semiconductors on polymer substrates. (Masters Thesis). McGill University. Retrieved from http://digitool.library.mcgill.ca/thesisfile101620.pdf

Chicago Manual of Style (16th Edition):

MacNab, Finlay. “Thin film transistors from II-IV semiconductors on polymer substrates.” 2006. Masters Thesis, McGill University. Accessed April 05, 2020. http://digitool.library.mcgill.ca/thesisfile101620.pdf.

MLA Handbook (7th Edition):

MacNab, Finlay. “Thin film transistors from II-IV semiconductors on polymer substrates.” 2006. Web. 05 Apr 2020.

Vancouver:

MacNab F. Thin film transistors from II-IV semiconductors on polymer substrates. [Internet] [Masters thesis]. McGill University; 2006. [cited 2020 Apr 05]. Available from: http://digitool.library.mcgill.ca/thesisfile101620.pdf.

Council of Science Editors:

MacNab F. Thin film transistors from II-IV semiconductors on polymer substrates. [Masters Thesis]. McGill University; 2006. Available from: http://digitool.library.mcgill.ca/thesisfile101620.pdf

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