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You searched for subject:(tantalum nitride). Showing records 1 – 13 of 13 total matches.

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Boston College

1. Liu, Mengdi. Ta₃N₅/Polymeric g-C₃N₄ as Hybrid Photoanode for Solar Water Splitting.

Degree: MS, Chemistry, 2018, Boston College

 Water splitting has been recognized as a promising solution to challenges associated with the intermittent nature of solar energy for over four decades. A great… (more)

Subjects/Keywords: Tantalum nitride; Solar water splitting; Graphitic carbon nitride

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APA (6th Edition):

Liu, M. (2018). Ta₃N₅/Polymeric g-C₃N₄ as Hybrid Photoanode for Solar Water Splitting. (Masters Thesis). Boston College. Retrieved from http://dlib.bc.edu/islandora/object/bc-ir:108366

Chicago Manual of Style (16th Edition):

Liu, Mengdi. “Ta₃N₅/Polymeric g-C₃N₄ as Hybrid Photoanode for Solar Water Splitting.” 2018. Masters Thesis, Boston College. Accessed August 09, 2020. http://dlib.bc.edu/islandora/object/bc-ir:108366.

MLA Handbook (7th Edition):

Liu, Mengdi. “Ta₃N₅/Polymeric g-C₃N₄ as Hybrid Photoanode for Solar Water Splitting.” 2018. Web. 09 Aug 2020.

Vancouver:

Liu M. Ta₃N₅/Polymeric g-C₃N₄ as Hybrid Photoanode for Solar Water Splitting. [Internet] [Masters thesis]. Boston College; 2018. [cited 2020 Aug 09]. Available from: http://dlib.bc.edu/islandora/object/bc-ir:108366.

Council of Science Editors:

Liu M. Ta₃N₅/Polymeric g-C₃N₄ as Hybrid Photoanode for Solar Water Splitting. [Masters Thesis]. Boston College; 2018. Available from: http://dlib.bc.edu/islandora/object/bc-ir:108366


North Carolina State University

2. Heuss, Gregory Paul. Thermal Stability of Transition Metal Nitrides as NMOS Gate Electrodes.

Degree: PhD, Materials Science and Engineering, 2002, North Carolina State University

 Refractory metals and their nitrides are being considered as gate electrodes for scaled CMOS devices. The advantages of metal gates over doped polysilicon include the… (more)

Subjects/Keywords: metal gate electrode; tantalum nitride

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APA (6th Edition):

Heuss, G. P. (2002). Thermal Stability of Transition Metal Nitrides as NMOS Gate Electrodes. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4281

Chicago Manual of Style (16th Edition):

Heuss, Gregory Paul. “Thermal Stability of Transition Metal Nitrides as NMOS Gate Electrodes.” 2002. Doctoral Dissertation, North Carolina State University. Accessed August 09, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4281.

MLA Handbook (7th Edition):

Heuss, Gregory Paul. “Thermal Stability of Transition Metal Nitrides as NMOS Gate Electrodes.” 2002. Web. 09 Aug 2020.

Vancouver:

Heuss GP. Thermal Stability of Transition Metal Nitrides as NMOS Gate Electrodes. [Internet] [Doctoral dissertation]. North Carolina State University; 2002. [cited 2020 Aug 09]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4281.

Council of Science Editors:

Heuss GP. Thermal Stability of Transition Metal Nitrides as NMOS Gate Electrodes. [Doctoral Dissertation]. North Carolina State University; 2002. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4281


NSYSU

3. Yueh, Zhi-Wei. The study of barrier mechanisms of tantalum nitride diffusion barrier layer between GaAs and Cu.

Degree: Master, Electro-Optical Engineering, 2000, NSYSU

 Abstract The behaviors of the TaNx barrier layer that placed between the Cu metal and GaAs have been studied by using X-ray diffraction, X-ray photoelectron… (more)

Subjects/Keywords: diffusion barrier layer; tantalum nitride

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APA (6th Edition):

Yueh, Z. (2000). The study of barrier mechanisms of tantalum nitride diffusion barrier layer between GaAs and Cu. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-141802

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yueh, Zhi-Wei. “The study of barrier mechanisms of tantalum nitride diffusion barrier layer between GaAs and Cu.” 2000. Thesis, NSYSU. Accessed August 09, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-141802.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yueh, Zhi-Wei. “The study of barrier mechanisms of tantalum nitride diffusion barrier layer between GaAs and Cu.” 2000. Web. 09 Aug 2020.

Vancouver:

Yueh Z. The study of barrier mechanisms of tantalum nitride diffusion barrier layer between GaAs and Cu. [Internet] [Thesis]. NSYSU; 2000. [cited 2020 Aug 09]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-141802.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yueh Z. The study of barrier mechanisms of tantalum nitride diffusion barrier layer between GaAs and Cu. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-141802

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


New Jersey Institute of Technology

4. Patel, Anamika. Deposition and characterization of magnetron sputtered BCC tantalum.

Degree: PhD, Electrical and Computer Engineering, 2003, New Jersey Institute of Technology

  The goal of this thesis was to provide scientific and technical research results for developing and characterizing tantalum (Ta) coatings on steel substrates deposited… (more)

Subjects/Keywords: Tantalum; Sputtering; BCC phase; Beta phase; Coatings; Tantalum nitride; Electrical and Electronics

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APA (6th Edition):

Patel, A. (2003). Deposition and characterization of magnetron sputtered BCC tantalum. (Doctoral Dissertation). New Jersey Institute of Technology. Retrieved from https://digitalcommons.njit.edu/dissertations/564

Chicago Manual of Style (16th Edition):

Patel, Anamika. “Deposition and characterization of magnetron sputtered BCC tantalum.” 2003. Doctoral Dissertation, New Jersey Institute of Technology. Accessed August 09, 2020. https://digitalcommons.njit.edu/dissertations/564.

MLA Handbook (7th Edition):

Patel, Anamika. “Deposition and characterization of magnetron sputtered BCC tantalum.” 2003. Web. 09 Aug 2020.

Vancouver:

Patel A. Deposition and characterization of magnetron sputtered BCC tantalum. [Internet] [Doctoral dissertation]. New Jersey Institute of Technology; 2003. [cited 2020 Aug 09]. Available from: https://digitalcommons.njit.edu/dissertations/564.

Council of Science Editors:

Patel A. Deposition and characterization of magnetron sputtered BCC tantalum. [Doctoral Dissertation]. New Jersey Institute of Technology; 2003. Available from: https://digitalcommons.njit.edu/dissertations/564


University of North Texas

5. Shepherd, Krupanand Solomon. Diffusion Barriers/Adhesion Promoters. Surface and Interfacial Studies of Copper and Copper-Aluminum Alloys.

Degree: 2000, University of North Texas

 The focus of this research is to study the interaction between copper and the diffusion barrier/adhesion promoter. The behavior of copper sputter-deposited onto sputter-cleaned tantalum(more)

Subjects/Keywords: Copper.; Copper alloys.; Tantalum.; Diffusion.; Adhesion.; copper; tantalum nitride; adhesion characteristics

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APA (6th Edition):

Shepherd, K. S. (2000). Diffusion Barriers/Adhesion Promoters. Surface and Interfacial Studies of Copper and Copper-Aluminum Alloys. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc2603/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Shepherd, Krupanand Solomon. “Diffusion Barriers/Adhesion Promoters. Surface and Interfacial Studies of Copper and Copper-Aluminum Alloys.” 2000. Thesis, University of North Texas. Accessed August 09, 2020. https://digital.library.unt.edu/ark:/67531/metadc2603/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Shepherd, Krupanand Solomon. “Diffusion Barriers/Adhesion Promoters. Surface and Interfacial Studies of Copper and Copper-Aluminum Alloys.” 2000. Web. 09 Aug 2020.

Vancouver:

Shepherd KS. Diffusion Barriers/Adhesion Promoters. Surface and Interfacial Studies of Copper and Copper-Aluminum Alloys. [Internet] [Thesis]. University of North Texas; 2000. [cited 2020 Aug 09]. Available from: https://digital.library.unt.edu/ark:/67531/metadc2603/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Shepherd KS. Diffusion Barriers/Adhesion Promoters. Surface and Interfacial Studies of Copper and Copper-Aluminum Alloys. [Thesis]. University of North Texas; 2000. Available from: https://digital.library.unt.edu/ark:/67531/metadc2603/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

6. Rudolph, Martin. Synthesis and characterization of magnetron-sputtered Ta₃N₅ thin films for the photoelectrolysis of water : Synthèse et caractérisation des couches minces de Ta₃N₅ élaborées par pulvérisation cathodique pour la photo-électrolyse de l'eau.

Degree: Docteur es, Physique des plasmas, 2017, Université Paris-Saclay (ComUE)

Le Ta₃N₅ fait partie des matériaux les plus prometteurs pour la photo-électrolyse de l’eau. En effet, la bande de valence et la bande de conduction… (more)

Subjects/Keywords: Pulvérisation cathodique; Oxy-nitrure de tantale; Photo-électrolyse; Ta₃N₅; Magnetron sputtering; Tantalum oxi-nitride; Photoelectrolysis; Ta₃N₅

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APA (6th Edition):

Rudolph, M. (2017). Synthesis and characterization of magnetron-sputtered Ta₃N₅ thin films for the photoelectrolysis of water : Synthèse et caractérisation des couches minces de Ta₃N₅ élaborées par pulvérisation cathodique pour la photo-électrolyse de l'eau. (Doctoral Dissertation). Université Paris-Saclay (ComUE). Retrieved from http://www.theses.fr/2017SACLS094

Chicago Manual of Style (16th Edition):

Rudolph, Martin. “Synthesis and characterization of magnetron-sputtered Ta₃N₅ thin films for the photoelectrolysis of water : Synthèse et caractérisation des couches minces de Ta₃N₅ élaborées par pulvérisation cathodique pour la photo-électrolyse de l'eau.” 2017. Doctoral Dissertation, Université Paris-Saclay (ComUE). Accessed August 09, 2020. http://www.theses.fr/2017SACLS094.

MLA Handbook (7th Edition):

Rudolph, Martin. “Synthesis and characterization of magnetron-sputtered Ta₃N₅ thin films for the photoelectrolysis of water : Synthèse et caractérisation des couches minces de Ta₃N₅ élaborées par pulvérisation cathodique pour la photo-électrolyse de l'eau.” 2017. Web. 09 Aug 2020.

Vancouver:

Rudolph M. Synthesis and characterization of magnetron-sputtered Ta₃N₅ thin films for the photoelectrolysis of water : Synthèse et caractérisation des couches minces de Ta₃N₅ élaborées par pulvérisation cathodique pour la photo-électrolyse de l'eau. [Internet] [Doctoral dissertation]. Université Paris-Saclay (ComUE); 2017. [cited 2020 Aug 09]. Available from: http://www.theses.fr/2017SACLS094.

Council of Science Editors:

Rudolph M. Synthesis and characterization of magnetron-sputtered Ta₃N₅ thin films for the photoelectrolysis of water : Synthèse et caractérisation des couches minces de Ta₃N₅ élaborées par pulvérisation cathodique pour la photo-électrolyse de l'eau. [Doctoral Dissertation]. Université Paris-Saclay (ComUE); 2017. Available from: http://www.theses.fr/2017SACLS094


University of Edinburgh

7. Tabasnikov, Aleksandr. Development of a high temperature sensor suitable for post-processed integration with electronics.

Degree: PhD, 2018, University of Edinburgh

 Integration of sensors and silicon-based electronics for harsh environment applications is driven by the automotive industry and the maturity of semiconductor processes that allow embedding… (more)

Subjects/Keywords: thin film tantalum nitride resistors; thin film platinum; Pt resistor chips; TaN resistor chips; temperature; temperature sensors

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APA (6th Edition):

Tabasnikov, A. (2018). Development of a high temperature sensor suitable for post-processed integration with electronics. (Doctoral Dissertation). University of Edinburgh. Retrieved from http://hdl.handle.net/1842/28971

Chicago Manual of Style (16th Edition):

Tabasnikov, Aleksandr. “Development of a high temperature sensor suitable for post-processed integration with electronics.” 2018. Doctoral Dissertation, University of Edinburgh. Accessed August 09, 2020. http://hdl.handle.net/1842/28971.

MLA Handbook (7th Edition):

Tabasnikov, Aleksandr. “Development of a high temperature sensor suitable for post-processed integration with electronics.” 2018. Web. 09 Aug 2020.

Vancouver:

Tabasnikov A. Development of a high temperature sensor suitable for post-processed integration with electronics. [Internet] [Doctoral dissertation]. University of Edinburgh; 2018. [cited 2020 Aug 09]. Available from: http://hdl.handle.net/1842/28971.

Council of Science Editors:

Tabasnikov A. Development of a high temperature sensor suitable for post-processed integration with electronics. [Doctoral Dissertation]. University of Edinburgh; 2018. Available from: http://hdl.handle.net/1842/28971


NSYSU

8. HSU, CHUNG-HSIEN. The study of barrier mechanisms of tantalum nitride diffusion barrier layer between SiGe and Cu.

Degree: Master, Materials Science and Engineering, 2000, NSYSU

 The failure mechanisms of the tantalum-based nitride diffusion barrier using between copper metal and the SiGe/Si layers grown with UHV/CVD have been studied. The TaN… (more)

Subjects/Keywords: diffusion barrier; copper metal; tantalum-based nitride; SiGe; failure mechanism

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APA (6th Edition):

HSU, C. (2000). The study of barrier mechanisms of tantalum nitride diffusion barrier layer between SiGe and Cu. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716100-174737

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

HSU, CHUNG-HSIEN. “The study of barrier mechanisms of tantalum nitride diffusion barrier layer between SiGe and Cu.” 2000. Thesis, NSYSU. Accessed August 09, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716100-174737.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

HSU, CHUNG-HSIEN. “The study of barrier mechanisms of tantalum nitride diffusion barrier layer between SiGe and Cu.” 2000. Web. 09 Aug 2020.

Vancouver:

HSU C. The study of barrier mechanisms of tantalum nitride diffusion barrier layer between SiGe and Cu. [Internet] [Thesis]. NSYSU; 2000. [cited 2020 Aug 09]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716100-174737.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

HSU C. The study of barrier mechanisms of tantalum nitride diffusion barrier layer between SiGe and Cu. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716100-174737

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

9. YONG LAI LIN, CLARE. A study of the Si3N4/Cu/Ta thin film systems for dual damascene technology.

Degree: 2004, National University of Singapore

Subjects/Keywords: Copper; silicon nitride; alpa/beta-tantalum; ammonia plasma treatment; electromigration; adhesion.

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APA (6th Edition):

YONG LAI LIN, C. (2004). A study of the Si3N4/Cu/Ta thin film systems for dual damascene technology. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/13762

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

YONG LAI LIN, CLARE. “A study of the Si3N4/Cu/Ta thin film systems for dual damascene technology.” 2004. Thesis, National University of Singapore. Accessed August 09, 2020. http://scholarbank.nus.edu.sg/handle/10635/13762.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

YONG LAI LIN, CLARE. “A study of the Si3N4/Cu/Ta thin film systems for dual damascene technology.” 2004. Web. 09 Aug 2020.

Vancouver:

YONG LAI LIN C. A study of the Si3N4/Cu/Ta thin film systems for dual damascene technology. [Internet] [Thesis]. National University of Singapore; 2004. [cited 2020 Aug 09]. Available from: http://scholarbank.nus.edu.sg/handle/10635/13762.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

YONG LAI LIN C. A study of the Si3N4/Cu/Ta thin film systems for dual damascene technology. [Thesis]. National University of Singapore; 2004. Available from: http://scholarbank.nus.edu.sg/handle/10635/13762

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

10. Tabassum, Tasnuva. CORRELATING THERMAL PROPERTIES OF SPUTTERED TANTALUM AND TANTALUM NITRIDE THIN FILMS OF VARYING N2 CONTENT WITH MECHANICAL, ELECTRICAL AND STRUCTURAL PROPERTIES .

Degree: 2017, Cornell University

 With rapid growth in the semiconductor industry, the need for optimization of nanofabrication processes is ever increasing. In such processes, TaN films are of great… (more)

Subjects/Keywords: Thermal; electrical; semiconductor; Nanoindentation; thin films; Materials Science; Nanotechnology; Engineering; tantalum nitride

…TaN: tantalum nitride N2: Nitrogen gas Ar: argon Cu: copper Si: silicon cp: specific heat… …the thermal properties of tantalum (Ta) and tantalum nitride (TaN) thin… …Introduction to Applications of Tantalum and Tantalum Nitride films in the Semiconductor Industry The… …Tantalum and Tantalum Nitride films from Literature Review 17 Additional properties which make… …Table 4: Residual stress of thin films 13 LIST OF ABBREVIATIONS AND SYMBOLS Ta: tantalum… 

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APA (6th Edition):

Tabassum, T. (2017). CORRELATING THERMAL PROPERTIES OF SPUTTERED TANTALUM AND TANTALUM NITRIDE THIN FILMS OF VARYING N2 CONTENT WITH MECHANICAL, ELECTRICAL AND STRUCTURAL PROPERTIES . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/56807

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tabassum, Tasnuva. “CORRELATING THERMAL PROPERTIES OF SPUTTERED TANTALUM AND TANTALUM NITRIDE THIN FILMS OF VARYING N2 CONTENT WITH MECHANICAL, ELECTRICAL AND STRUCTURAL PROPERTIES .” 2017. Thesis, Cornell University. Accessed August 09, 2020. http://hdl.handle.net/1813/56807.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tabassum, Tasnuva. “CORRELATING THERMAL PROPERTIES OF SPUTTERED TANTALUM AND TANTALUM NITRIDE THIN FILMS OF VARYING N2 CONTENT WITH MECHANICAL, ELECTRICAL AND STRUCTURAL PROPERTIES .” 2017. Web. 09 Aug 2020.

Vancouver:

Tabassum T. CORRELATING THERMAL PROPERTIES OF SPUTTERED TANTALUM AND TANTALUM NITRIDE THIN FILMS OF VARYING N2 CONTENT WITH MECHANICAL, ELECTRICAL AND STRUCTURAL PROPERTIES . [Internet] [Thesis]. Cornell University; 2017. [cited 2020 Aug 09]. Available from: http://hdl.handle.net/1813/56807.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tabassum T. CORRELATING THERMAL PROPERTIES OF SPUTTERED TANTALUM AND TANTALUM NITRIDE THIN FILMS OF VARYING N2 CONTENT WITH MECHANICAL, ELECTRICAL AND STRUCTURAL PROPERTIES . [Thesis]. Cornell University; 2017. Available from: http://hdl.handle.net/1813/56807

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

11. Grumski, Michael. Ab initio Study of Tantalum Nitride and Silver Adatoms.

Degree: PhD, Materials Science and Engineering, 2012, Arizona State University

 In 2022, integrated circuit interconnects will approach 10 nm and the diffusion barrier layers needed to ensure long lasting devices will be at 1 nm.… (more)

Subjects/Keywords: Materials Science; Physics; Quantum physics; Density Functional Theory; Interconnect; Silver Adatom; Silver Interface; Tantalum Nitride

…14 3. Table of Tantalum Nitride Polymorphs… …41 9. Density of States of Tantalum Nitride. The three phases appear metallic. Fermi… …the metal, tantalum for the adhesion layer and tantalum nitride for the barrier layer… …Barrier Layer 0.8 to 1 tantalum nitride or titanium nitride Interlayer NA carbon doped silicon… …is immiscible in tantalum and immiscible in tantalum nitride, but these materials are used… 

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APA (6th Edition):

Grumski, M. (2012). Ab initio Study of Tantalum Nitride and Silver Adatoms. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/14745

Chicago Manual of Style (16th Edition):

Grumski, Michael. “Ab initio Study of Tantalum Nitride and Silver Adatoms.” 2012. Doctoral Dissertation, Arizona State University. Accessed August 09, 2020. http://repository.asu.edu/items/14745.

MLA Handbook (7th Edition):

Grumski, Michael. “Ab initio Study of Tantalum Nitride and Silver Adatoms.” 2012. Web. 09 Aug 2020.

Vancouver:

Grumski M. Ab initio Study of Tantalum Nitride and Silver Adatoms. [Internet] [Doctoral dissertation]. Arizona State University; 2012. [cited 2020 Aug 09]. Available from: http://repository.asu.edu/items/14745.

Council of Science Editors:

Grumski M. Ab initio Study of Tantalum Nitride and Silver Adatoms. [Doctoral Dissertation]. Arizona State University; 2012. Available from: http://repository.asu.edu/items/14745


Texas A&M University

12. Tewg, Jun-Yen. Zirconium-doped tantalum oxide high-k gate dielectric films.

Degree: 2005, Texas A&M University

 A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100… (more)

Subjects/Keywords: high-k; gate dielectric; dielectric material; thin film; capacitor; MOSFET; ULSI; scaling; tantalum oxide; zirconium oxide; doping; dielectric constant; leakage current; C-V; I-V; interface state density; gate electrode; metal gate; metal nitride gate; interface; tantalum nitride

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APA (6th Edition):

Tewg, J. (2005). Zirconium-doped tantalum oxide high-k gate dielectric films. (Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/1346

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tewg, Jun-Yen. “Zirconium-doped tantalum oxide high-k gate dielectric films.” 2005. Thesis, Texas A&M University. Accessed August 09, 2020. http://hdl.handle.net/1969.1/1346.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tewg, Jun-Yen. “Zirconium-doped tantalum oxide high-k gate dielectric films.” 2005. Web. 09 Aug 2020.

Vancouver:

Tewg J. Zirconium-doped tantalum oxide high-k gate dielectric films. [Internet] [Thesis]. Texas A&M University; 2005. [cited 2020 Aug 09]. Available from: http://hdl.handle.net/1969.1/1346.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tewg J. Zirconium-doped tantalum oxide high-k gate dielectric films. [Thesis]. Texas A&M University; 2005. Available from: http://hdl.handle.net/1969.1/1346

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

13. Jur, Jesse Stephen. Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications.

Degree: PhD, Materials Science and Engineering, 2007, North Carolina State University

 The ability to improve performance of the high-end metal oxide semiconductor field effect transistor (MOSFET) is highly reliant on the dimensional scaling of such a… (more)

Subjects/Keywords: dc magnetron sputtering; physical vapor deposition; tungsten oxide; tungsten; W; tantalum nitride; TaN; lanthanum; lanthanum oxide; La; La2O3; La2SiO5; lanthanum silicate; La2Si2O7; Ho; holmium; holmium oxide; cation diffusion; back-side SIMS; secondary ion mass spectroscopy; SIMS; XRD; x-ray diffraction; molecular beam deposition; PMA; XPS; x-ray photoemission spectroscopy; post metallization anneal; RCA; chemical oxide; metal oxide semiconductor field effect transistor; MBE; silica; SiO2; interfacial layer; gate dielectric; dielectric; silicate; oxide; high-kappa; EOT; equivalent oxide thickness; high-k; band diagram; valance band offset; conduction band offset; band gap energy; effective work function; work function; voltage shift; threshold voltage; flat band voltage; leakage current; capacitance; mobility; electronic materials; scaling; Moore?s Law; MIS; MOS; MOSFET; high resolution transmission electron microscopy; HRTEM; RTA; rapid thermal anneal; PVD; tantalum; Ta; gate electrode; metal electrode; hafnium silicate; hafnium oxide; hafnium; ytterbium; ytterbium oxide; Yb; dysprosium oxide; dysprosium; Dy; E-beam evaporation; thermal evaporation; forming gas anneal; ozone; ammonia anneal; FGA

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APA (6th Edition):

Jur, J. S. (2007). Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5447

Chicago Manual of Style (16th Edition):

Jur, Jesse Stephen. “Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications.” 2007. Doctoral Dissertation, North Carolina State University. Accessed August 09, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5447.

MLA Handbook (7th Edition):

Jur, Jesse Stephen. “Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications.” 2007. Web. 09 Aug 2020.

Vancouver:

Jur JS. Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications. [Internet] [Doctoral dissertation]. North Carolina State University; 2007. [cited 2020 Aug 09]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5447.

Council of Science Editors:

Jur JS. Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications. [Doctoral Dissertation]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5447

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