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NSYSU

1. Tzeng, Te-En. InGaAs Quantum Dots grown by Molecular Beam Epitaxy.

Degree: Master, Electro-Optical Engineering, 2011, NSYSU

In this thesis, we have reported the MBE growth, design, and fabrication of the InGaAs quantum dots (QDs) laser/semiconductor optical amplifier, broadband QDs structure, coupled double cavity structure for terahertz emission on GaAs substrate. The emission wavelengths of the strain-induced S-K growth mode QDs structures are adjusted through the composition of QDs and strain-compensated capping layer. Also, the technique of growing high quality InGaAs QDs with solid source molecular beam epitaxy has been established and characterized by double crystal X-ray diffraction, transmission electron microscopy, photoluminescence, electroluminescence measurements. For 1.3μm QDs laser samples, ridge waveguide lasers of the Fabry-Perot (FP) type are fabricated by wet-etching process. From the QDs laser L-I curve, the e2-hh2 transition at λ =1160nm have larger optical gain than e1-hh1 transition at λ =1220nm. The FP laser with 0.6μm cavity length shows a lasing peak of 1160nm at threshold. As the cavity length increase to 2μm, the lasing peak red shift to 1220nm (closed to ground state emission wavelength). This energy band gap transition phenomenon is obvious especially in the QDs laser with quantum well (QW) structure. When the injection current increase, two lasing peaks at λ= 1160 and 1175nm are observed sequentially. This unique lasing behavior is shown to be consistent with carriers localized in noninteracting dots. For the application of 1.3μm light source, we optimum the growth condition for different needs in optical coherent tomography (OCT) light source, tandem solar cell, terahertz emission light source, etc. For the super luminescence diode (SLED) in OCT, we design multi-stacked asymmetric QDs structure (AMQD), QDs in the well structure (DWell), Dwell with p-doping in well structure to investigate the carrier recombination condition and bandwidth. Comparing with 5 structures in this study, the Dwell with p-doping in well structure has a maximum EL bandwidth exceed 198nm. The large bandwidth is attributed to the QW which increases the carrier capture rate and the p-doping which provide the efficient holes in valance band. This structure provides an excellent SLED light source solution to replace the existing program. For the tandem solar cell, we use the multi-stack QDs to compose broadband absorption in 1eV range. In order to avoid the degradation in the open circuit voltage, we use InGaAs QW to reduce the QDs strain. We observed the doping effect on the built in field through the photo-reflectance measurements. For the better photocurrent collection, we use p-doping in the QW to increase the built-in field intensity to obtain higher efficiency. For the terahertz emission, the QDs embedded in coupled double-cavity structures with an AlAs/GaAs intermediate distributed Bragg reflector (DBR) are grown on GaAs substrates. Two emission peaks at 1180, 1206 nm from the QDs corresponding to the coupled double-cavity resonant modes are observed in the high reflection band. The frequency differences for the two resonant… Advisors/Committee Members: Lung-Han Peng (chair), Jian-Jang Huang (chair), Wood-Hi Cheng (chair), Sheng-Di Lin (chair), Yung-Jui Chen (chair), Keh-Yung Cheng (chair), Tsong-Sheng Lay (committee member), Ching-Hwa Ho (chair), Hao-Hsiung Lin (chair).

Subjects/Keywords: laser; super luminescence diode; solar cell; broadband; molecular beam epitaxy; quantum dot

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APA (6th Edition):

Tzeng, T. (2011). InGaAs Quantum Dots grown by Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907111-100334

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tzeng, Te-En. “InGaAs Quantum Dots grown by Molecular Beam Epitaxy.” 2011. Thesis, NSYSU. Accessed March 30, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907111-100334.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tzeng, Te-En. “InGaAs Quantum Dots grown by Molecular Beam Epitaxy.” 2011. Web. 30 Mar 2020.

Vancouver:

Tzeng T. InGaAs Quantum Dots grown by Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2011. [cited 2020 Mar 30]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907111-100334.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tzeng T. InGaAs Quantum Dots grown by Molecular Beam Epitaxy. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907111-100334

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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