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You searched for subject:(single event effects). Showing records 1 – 30 of 74 total matches.

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Vanderbilt University

1. Harrington, Rachel Christine. Models for Characterizing Single-Event Effects in Advanced Technology Circuits.

Degree: PhD, Electrical Engineering, 2019, Vanderbilt University

 At each emerging technology node, characterization of single-event transients and upsets is crucial to accurately predict soft error rates for circuits operating in radiation environments.… (more)

Subjects/Keywords: modeling; single-event transient; single-event upset; single-event effects

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Harrington, R. C. (2019). Models for Characterizing Single-Event Effects in Advanced Technology Circuits. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-05152019-100307/ ;

Chicago Manual of Style (16th Edition):

Harrington, Rachel Christine. “Models for Characterizing Single-Event Effects in Advanced Technology Circuits.” 2019. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-05152019-100307/ ;.

MLA Handbook (7th Edition):

Harrington, Rachel Christine. “Models for Characterizing Single-Event Effects in Advanced Technology Circuits.” 2019. Web. 25 Feb 2020.

Vancouver:

Harrington RC. Models for Characterizing Single-Event Effects in Advanced Technology Circuits. [Internet] [Doctoral dissertation]. Vanderbilt University; 2019. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-05152019-100307/ ;.

Council of Science Editors:

Harrington RC. Models for Characterizing Single-Event Effects in Advanced Technology Circuits. [Doctoral Dissertation]. Vanderbilt University; 2019. Available from: http://etd.library.vanderbilt.edu/available/etd-05152019-100307/ ;


Vanderbilt University

2. Diggins, Zachary John. Using capacitance to radiation harden flip-flops at advanced technology nodes.

Degree: MS, Electrical Engineering, 2013, Vanderbilt University

 Capacitive radiation hardening by design (RHBD) techniques to reduce the single-event cross section of flip-flops are shown to be effective at highly scaled technology nodes,… (more)

Subjects/Keywords: cmos; radiation effects; single event upset

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APA (6th Edition):

Diggins, Z. J. (2013). Using capacitance to radiation harden flip-flops at advanced technology nodes. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11192013-122835/ ;

Chicago Manual of Style (16th Edition):

Diggins, Zachary John. “Using capacitance to radiation harden flip-flops at advanced technology nodes.” 2013. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-11192013-122835/ ;.

MLA Handbook (7th Edition):

Diggins, Zachary John. “Using capacitance to radiation harden flip-flops at advanced technology nodes.” 2013. Web. 25 Feb 2020.

Vancouver:

Diggins ZJ. Using capacitance to radiation harden flip-flops at advanced technology nodes. [Internet] [Masters thesis]. Vanderbilt University; 2013. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-11192013-122835/ ;.

Council of Science Editors:

Diggins ZJ. Using capacitance to radiation harden flip-flops at advanced technology nodes. [Masters Thesis]. Vanderbilt University; 2013. Available from: http://etd.library.vanderbilt.edu/available/etd-11192013-122835/ ;


Vanderbilt University

3. Brewer, Rachel Mae. The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture.

Degree: MS, Electrical Engineering, 2019, Vanderbilt University

 Neuromorphic computing endeavors to imitate the way biological brains process information and problem-solves. Uses for neuromorphic computing span disciplines and include applications in image processing,… (more)

Subjects/Keywords: single event upset; single event effect; radiation effects; neuromorphic computing; image classification; TrueNorth

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APA (6th Edition):

Brewer, R. M. (2019). The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11182019-150037/ ;

Chicago Manual of Style (16th Edition):

Brewer, Rachel Mae. “The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture.” 2019. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-11182019-150037/ ;.

MLA Handbook (7th Edition):

Brewer, Rachel Mae. “The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture.” 2019. Web. 25 Feb 2020.

Vancouver:

Brewer RM. The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture. [Internet] [Masters thesis]. Vanderbilt University; 2019. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-11182019-150037/ ;.

Council of Science Editors:

Brewer RM. The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture. [Masters Thesis]. Vanderbilt University; 2019. Available from: http://etd.library.vanderbilt.edu/available/etd-11182019-150037/ ;


Vanderbilt University

4. King, Michael Patrick. The impact of delta-rays on single-event upsets in highly scaled SOI SRAMs.

Degree: MS, Electrical Engineering, 2011, Vanderbilt University

 Orbiting spacecraft experience harsh radiation environments that may affect microelectronics in undesirable ways. Ionizing radiation interacts with microelectronics in a variety of ways. One such… (more)

Subjects/Keywords: single event upset; single event effects; delta-ray; silicon-on-insulator; sram

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APA (6th Edition):

King, M. P. (2011). The impact of delta-rays on single-event upsets in highly scaled SOI SRAMs. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07252011-113418/ ;

Chicago Manual of Style (16th Edition):

King, Michael Patrick. “The impact of delta-rays on single-event upsets in highly scaled SOI SRAMs.” 2011. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-07252011-113418/ ;.

MLA Handbook (7th Edition):

King, Michael Patrick. “The impact of delta-rays on single-event upsets in highly scaled SOI SRAMs.” 2011. Web. 25 Feb 2020.

Vancouver:

King MP. The impact of delta-rays on single-event upsets in highly scaled SOI SRAMs. [Internet] [Masters thesis]. Vanderbilt University; 2011. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-07252011-113418/ ;.

Council of Science Editors:

King MP. The impact of delta-rays on single-event upsets in highly scaled SOI SRAMs. [Masters Thesis]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-07252011-113418/ ;


Vanderbilt University

5. Chen, Yanran. Analysis and hardening of all-digital phase-locked loops (ADPLLs) to single-event radiation effects.

Degree: PhD, Electrical Engineering, 2017, Vanderbilt University

 In deep sub-micron CMOS technologies, all-digital phase-locked loops (ADPLLs) are favored over conventional analog or mixed-signal phase-locked loops (A/MS) PLLs for providing the clock signals… (more)

Subjects/Keywords: Single-Event Upsets (SEU); All-digital Phase-locked Loops (ADPLLs); Single-Event Effects (SEE)

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APA (6th Edition):

Chen, Y. (2017). Analysis and hardening of all-digital phase-locked loops (ADPLLs) to single-event radiation effects. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu//available/etd-09222017-180229/ ;

Chicago Manual of Style (16th Edition):

Chen, Yanran. “Analysis and hardening of all-digital phase-locked loops (ADPLLs) to single-event radiation effects.” 2017. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu//available/etd-09222017-180229/ ;.

MLA Handbook (7th Edition):

Chen, Yanran. “Analysis and hardening of all-digital phase-locked loops (ADPLLs) to single-event radiation effects.” 2017. Web. 25 Feb 2020.

Vancouver:

Chen Y. Analysis and hardening of all-digital phase-locked loops (ADPLLs) to single-event radiation effects. [Internet] [Doctoral dissertation]. Vanderbilt University; 2017. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu//available/etd-09222017-180229/ ;.

Council of Science Editors:

Chen Y. Analysis and hardening of all-digital phase-locked loops (ADPLLs) to single-event radiation effects. [Doctoral Dissertation]. Vanderbilt University; 2017. Available from: http://etd.library.vanderbilt.edu//available/etd-09222017-180229/ ;


Vanderbilt University

6. Gadlage, Matthew John. Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies.

Degree: PhD, Electrical Engineering, 2010, Vanderbilt University

Single-event transients (SETs) are a significant reliability issue for space-based electronic systems. A single-event transient is a radiation-induced glitch in an electronic circuit caused by… (more)

Subjects/Keywords: radiation effects; space environment; soft errors; heavy ions; single event effects; single event transients; silicon-on-insulator; temperature

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APA (6th Edition):

Gadlage, M. J. (2010). Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03262010-102121/ ;

Chicago Manual of Style (16th Edition):

Gadlage, Matthew John. “Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies.” 2010. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-03262010-102121/ ;.

MLA Handbook (7th Edition):

Gadlage, Matthew John. “Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies.” 2010. Web. 25 Feb 2020.

Vancouver:

Gadlage MJ. Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2010. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-03262010-102121/ ;.

Council of Science Editors:

Gadlage MJ. Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies. [Doctoral Dissertation]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-03262010-102121/ ;

7. Al Youssef, Ahmad. Étude par modélisation des événements singuliers (SET/SEU/SEL) induits par l’environnement radiatif dans les composants électroniques : Modeling study of singular events (SET/SEU/SEL) induced by the radiative environment in electronic components.

Degree: Docteur es, Génie électrique, 2017, Toulouse, ISAE

L’environnement radiatif spatial est particulièrement critique pour la fiabilité des circuits intégrés et systèmes électroniques embarqués. Cet environnement chargé en particules énergétiques (proton, électron, ions… (more)

Subjects/Keywords: Microélectronique spatiale; Effets de radiations; Single Event Effect; Single Event Latchup; Modélisation; Simulation TCAD; Spatial Microelectronics; Radiation Effects; Single Event Effect; Single Event Latchup; Modeling; TCAD Simulation; 621

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APA (6th Edition):

Al Youssef, A. (2017). Étude par modélisation des événements singuliers (SET/SEU/SEL) induits par l’environnement radiatif dans les composants électroniques : Modeling study of singular events (SET/SEU/SEL) induced by the radiative environment in electronic components. (Doctoral Dissertation). Toulouse, ISAE. Retrieved from http://www.theses.fr/2017ESAE0021

Chicago Manual of Style (16th Edition):

Al Youssef, Ahmad. “Étude par modélisation des événements singuliers (SET/SEU/SEL) induits par l’environnement radiatif dans les composants électroniques : Modeling study of singular events (SET/SEU/SEL) induced by the radiative environment in electronic components.” 2017. Doctoral Dissertation, Toulouse, ISAE. Accessed February 25, 2020. http://www.theses.fr/2017ESAE0021.

MLA Handbook (7th Edition):

Al Youssef, Ahmad. “Étude par modélisation des événements singuliers (SET/SEU/SEL) induits par l’environnement radiatif dans les composants électroniques : Modeling study of singular events (SET/SEU/SEL) induced by the radiative environment in electronic components.” 2017. Web. 25 Feb 2020.

Vancouver:

Al Youssef A. Étude par modélisation des événements singuliers (SET/SEU/SEL) induits par l’environnement radiatif dans les composants électroniques : Modeling study of singular events (SET/SEU/SEL) induced by the radiative environment in electronic components. [Internet] [Doctoral dissertation]. Toulouse, ISAE; 2017. [cited 2020 Feb 25]. Available from: http://www.theses.fr/2017ESAE0021.

Council of Science Editors:

Al Youssef A. Étude par modélisation des événements singuliers (SET/SEU/SEL) induits par l’environnement radiatif dans les composants électroniques : Modeling study of singular events (SET/SEU/SEL) induced by the radiative environment in electronic components. [Doctoral Dissertation]. Toulouse, ISAE; 2017. Available from: http://www.theses.fr/2017ESAE0021


Georgia Tech

8. Lourenco, Nelson Estacio. Mitigation of transient radiation effects in advanced silicon-germanium technologies.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The need for flexible, low-cost electronics in extreme environment applications has brought silicon-germanium (SiGe) technologies into the spotlight, but the viable long-term capability of these… (more)

Subjects/Keywords: SiGe; Radiation; Hardening; Silicon-germanium; Single-event effects

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APA (6th Edition):

Lourenco, N. E. (2016). Mitigation of transient radiation effects in advanced silicon-germanium technologies. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58187

Chicago Manual of Style (16th Edition):

Lourenco, Nelson Estacio. “Mitigation of transient radiation effects in advanced silicon-germanium technologies.” 2016. Doctoral Dissertation, Georgia Tech. Accessed February 25, 2020. http://hdl.handle.net/1853/58187.

MLA Handbook (7th Edition):

Lourenco, Nelson Estacio. “Mitigation of transient radiation effects in advanced silicon-germanium technologies.” 2016. Web. 25 Feb 2020.

Vancouver:

Lourenco NE. Mitigation of transient radiation effects in advanced silicon-germanium technologies. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1853/58187.

Council of Science Editors:

Lourenco NE. Mitigation of transient radiation effects in advanced silicon-germanium technologies. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58187


Vanderbilt University

9. Mahatme, Nihaar Nilesh. Comparison of combinational and sequential error rates and a low overhead technique for single event transient mitigation.

Degree: MS, Electrical Engineering, 2011, Vanderbilt University

Single Event Effects (SEE) in combinational logic circuits, caused due radiation particle strikes are a major concern for modern high-speed devices. The frequency dependence of… (more)

Subjects/Keywords: combinational logic circuits; high speed circuits; radiation effects; single event effects; soft errors

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APA (6th Edition):

Mahatme, N. N. (2011). Comparison of combinational and sequential error rates and a low overhead technique for single event transient mitigation. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12062011-113559/ ;

Chicago Manual of Style (16th Edition):

Mahatme, Nihaar Nilesh. “Comparison of combinational and sequential error rates and a low overhead technique for single event transient mitigation.” 2011. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-12062011-113559/ ;.

MLA Handbook (7th Edition):

Mahatme, Nihaar Nilesh. “Comparison of combinational and sequential error rates and a low overhead technique for single event transient mitigation.” 2011. Web. 25 Feb 2020.

Vancouver:

Mahatme NN. Comparison of combinational and sequential error rates and a low overhead technique for single event transient mitigation. [Internet] [Masters thesis]. Vanderbilt University; 2011. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-12062011-113559/ ;.

Council of Science Editors:

Mahatme NN. Comparison of combinational and sequential error rates and a low overhead technique for single event transient mitigation. [Masters Thesis]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-12062011-113559/ ;


Universidade do Rio Grande do Sul

10. Lanot, Alisson Jamie Cruz. Estudo de falhas transientes e técnicas de tolerância a falhas em conversores de dados do tipo SAR baseados em redistribuição de carga.

Degree: 2014, Universidade do Rio Grande do Sul

Conversores A/D do tipo aproximações sucessivas (SAR) baseados em redistribuição de carga são frequentemente utilizados em aplicações envolvendo a aquisição de sinais, principalmente as que… (more)

Subjects/Keywords: Analog to digital converters; Conversor analogico/digital; Circuitos integrados; Successive approximation register; Single event effects; Single event transients; Fault mitigation techniques

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APA (6th Edition):

Lanot, A. J. C. (2014). Estudo de falhas transientes e técnicas de tolerância a falhas em conversores de dados do tipo SAR baseados em redistribuição de carga. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/114478

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lanot, Alisson Jamie Cruz. “Estudo de falhas transientes e técnicas de tolerância a falhas em conversores de dados do tipo SAR baseados em redistribuição de carga.” 2014. Thesis, Universidade do Rio Grande do Sul. Accessed February 25, 2020. http://hdl.handle.net/10183/114478.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lanot, Alisson Jamie Cruz. “Estudo de falhas transientes e técnicas de tolerância a falhas em conversores de dados do tipo SAR baseados em redistribuição de carga.” 2014. Web. 25 Feb 2020.

Vancouver:

Lanot AJC. Estudo de falhas transientes e técnicas de tolerância a falhas em conversores de dados do tipo SAR baseados em redistribuição de carga. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2014. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10183/114478.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lanot AJC. Estudo de falhas transientes e técnicas de tolerância a falhas em conversores de dados do tipo SAR baseados em redistribuição de carga. [Thesis]. Universidade do Rio Grande do Sul; 2014. Available from: http://hdl.handle.net/10183/114478

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

11. Evans, Adrian. Techniques d'abstraction pour l'analyse et la mitigation des effets dus à la radiation : Abstraction techniques for scalable soft error analysis and mitigation.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2014, Université de Grenoble

 Les effets dus à la radiation peuvent provoquer des pannes dans des circuits intégrés. Lorsqu'une particule subatomique, fait se déposer une charge dans les régions… (more)

Subjects/Keywords: Effets singuliers; Effets transitoires; Injection de fautes; Asic; Protection parité; Fiabilité; Single-event effects; Single-event upsets; Single-event transients; Reliable systems; Fault-injection; 620

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APA (6th Edition):

Evans, A. (2014). Techniques d'abstraction pour l'analyse et la mitigation des effets dus à la radiation : Abstraction techniques for scalable soft error analysis and mitigation. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2014GRENT035

Chicago Manual of Style (16th Edition):

Evans, Adrian. “Techniques d'abstraction pour l'analyse et la mitigation des effets dus à la radiation : Abstraction techniques for scalable soft error analysis and mitigation.” 2014. Doctoral Dissertation, Université de Grenoble. Accessed February 25, 2020. http://www.theses.fr/2014GRENT035.

MLA Handbook (7th Edition):

Evans, Adrian. “Techniques d'abstraction pour l'analyse et la mitigation des effets dus à la radiation : Abstraction techniques for scalable soft error analysis and mitigation.” 2014. Web. 25 Feb 2020.

Vancouver:

Evans A. Techniques d'abstraction pour l'analyse et la mitigation des effets dus à la radiation : Abstraction techniques for scalable soft error analysis and mitigation. [Internet] [Doctoral dissertation]. Université de Grenoble; 2014. [cited 2020 Feb 25]. Available from: http://www.theses.fr/2014GRENT035.

Council of Science Editors:

Evans A. Techniques d'abstraction pour l'analyse et la mitigation des effets dus à la radiation : Abstraction techniques for scalable soft error analysis and mitigation. [Doctoral Dissertation]. Université de Grenoble; 2014. Available from: http://www.theses.fr/2014GRENT035


Universidade do Rio Grande do Sul

12. Bartra, Walter Enrique Calienes. Modelamento do single-Event effiects em circuitos de memória FDSOI.

Degree: 2016, Universidade do Rio Grande do Sul

Este trabalho mostra a comparação dos efeitos das falhas provocadas pelos Single-Event Effects em dispositivos 28nm FDSOI, 28nm FDSOI High-K e 32nm Bulk CMOS e… (more)

Subjects/Keywords: Single-event effects; Microeletrônica; Single-event transient; Modelagem computacional; Single-event upset; Fully depleted silicon on insulator; 2D simulation; 3D simulation; Modeling

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APA (6th Edition):

Bartra, W. E. C. (2016). Modelamento do single-Event effiects em circuitos de memória FDSOI. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/159203

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bartra, Walter Enrique Calienes. “Modelamento do single-Event effiects em circuitos de memória FDSOI.” 2016. Thesis, Universidade do Rio Grande do Sul. Accessed February 25, 2020. http://hdl.handle.net/10183/159203.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bartra, Walter Enrique Calienes. “Modelamento do single-Event effiects em circuitos de memória FDSOI.” 2016. Web. 25 Feb 2020.

Vancouver:

Bartra WEC. Modelamento do single-Event effiects em circuitos de memória FDSOI. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2016. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10183/159203.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bartra WEC. Modelamento do single-Event effiects em circuitos de memória FDSOI. [Thesis]. Universidade do Rio Grande do Sul; 2016. Available from: http://hdl.handle.net/10183/159203

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

13. Wang, Haibin. STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS.

Degree: 2015, University of Saskatchewan

 Microelectronic devices and systems have been extensively utilized in a variety of radiation environments, ranging from the low-earth orbit to the ground level. A high-energy… (more)

Subjects/Keywords: Single event effects; Charge sharing; nano technology; flip-flop; Radiation Hardening By Design

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APA (6th Edition):

Wang, H. (2015). STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS. (Thesis). University of Saskatchewan. Retrieved from http://hdl.handle.net/10388/ETD-2015-08-2101

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Haibin. “STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS.” 2015. Thesis, University of Saskatchewan. Accessed February 25, 2020. http://hdl.handle.net/10388/ETD-2015-08-2101.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Haibin. “STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS.” 2015. Web. 25 Feb 2020.

Vancouver:

Wang H. STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS. [Internet] [Thesis]. University of Saskatchewan; 2015. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10388/ETD-2015-08-2101.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang H. STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS. [Thesis]. University of Saskatchewan; 2015. Available from: http://hdl.handle.net/10388/ETD-2015-08-2101

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

14. Albandes, Iuri. Use of Approximate Triple Modular Redundancy for Fault Tolerance in Digital Circuits .

Degree: 2018, University of Alicante

 La triple redundancia modular (TMR) es una técnica bien conocida de mitigación de fallos que proporciona una alta protección frente a fallos únicos pero con… (more)

Subjects/Keywords: Fault Tolerance; Single Event Effects; Approximate circuits; Approximate-TMR; Multi-Objective Optimization; Genetic Algorithm

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APA (6th Edition):

Albandes, I. (2018). Use of Approximate Triple Modular Redundancy for Fault Tolerance in Digital Circuits . (Thesis). University of Alicante. Retrieved from http://hdl.handle.net/10045/88248

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Albandes, Iuri. “Use of Approximate Triple Modular Redundancy for Fault Tolerance in Digital Circuits .” 2018. Thesis, University of Alicante. Accessed February 25, 2020. http://hdl.handle.net/10045/88248.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Albandes, Iuri. “Use of Approximate Triple Modular Redundancy for Fault Tolerance in Digital Circuits .” 2018. Web. 25 Feb 2020.

Vancouver:

Albandes I. Use of Approximate Triple Modular Redundancy for Fault Tolerance in Digital Circuits . [Internet] [Thesis]. University of Alicante; 2018. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10045/88248.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Albandes I. Use of Approximate Triple Modular Redundancy for Fault Tolerance in Digital Circuits . [Thesis]. University of Alicante; 2018. Available from: http://hdl.handle.net/10045/88248

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

15. Olson, Brian David. Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters.

Degree: PhD, Electrical Engineering, 2010, Vanderbilt University

 Analog-to-digital converters (ADCs) are necessary circuits in many space, military, and medical circuit applications. Intelligence, surveillance, reconnaissance, and communication missions all require high performance ADCs.… (more)

Subjects/Keywords: single-events; SEU; SEE; RHBD; radiation hardened by design; ADC; single-event effects; analog-to-digital converters

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APA (6th Edition):

Olson, B. D. (2010). Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12102010-152348/ ;

Chicago Manual of Style (16th Edition):

Olson, Brian David. “Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters.” 2010. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-12102010-152348/ ;.

MLA Handbook (7th Edition):

Olson, Brian David. “Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters.” 2010. Web. 25 Feb 2020.

Vancouver:

Olson BD. Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters. [Internet] [Doctoral dissertation]. Vanderbilt University; 2010. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-12102010-152348/ ;.

Council of Science Editors:

Olson BD. Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters. [Doctoral Dissertation]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-12102010-152348/ ;


University of Saskatchewan

16. Newton, Michael R W 1990-. Evaluation of Single Event Effects Using the Ultrafast Pulsed Laser Facility at the Saskatchewan Structural Sciences Centre.

Degree: 2016, University of Saskatchewan

Single event effects have been an issue in microelectronic devices and circuits for some time, especially those used in radiation-intense environments such as space. Traditionally,… (more)

Subjects/Keywords: Single event effects; pulsed laser; single photon absorption; two photon absorption Hall Effect Sensor; Virtex-5

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APA (6th Edition):

Newton, M. R. W. 1. (2016). Evaluation of Single Event Effects Using the Ultrafast Pulsed Laser Facility at the Saskatchewan Structural Sciences Centre. (Thesis). University of Saskatchewan. Retrieved from http://hdl.handle.net/10388/7668

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Newton, Michael R W 1990-. “Evaluation of Single Event Effects Using the Ultrafast Pulsed Laser Facility at the Saskatchewan Structural Sciences Centre.” 2016. Thesis, University of Saskatchewan. Accessed February 25, 2020. http://hdl.handle.net/10388/7668.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Newton, Michael R W 1990-. “Evaluation of Single Event Effects Using the Ultrafast Pulsed Laser Facility at the Saskatchewan Structural Sciences Centre.” 2016. Web. 25 Feb 2020.

Vancouver:

Newton MRW1. Evaluation of Single Event Effects Using the Ultrafast Pulsed Laser Facility at the Saskatchewan Structural Sciences Centre. [Internet] [Thesis]. University of Saskatchewan; 2016. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10388/7668.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Newton MRW1. Evaluation of Single Event Effects Using the Ultrafast Pulsed Laser Facility at the Saskatchewan Structural Sciences Centre. [Thesis]. University of Saskatchewan; 2016. Available from: http://hdl.handle.net/10388/7668

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

17. El Mamouni, Farah. Single-event-transient effects in sub-70 nm bulk and SOI FinFETs.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

 In this thesis, single event transient (SET) effects in sub-70 nm bulk and SOI FinFETs are investigated through topside and backside laser and heavy ion… (more)

Subjects/Keywords: single event effects.; electronic devices; Radiation effects

…which resulted in a number of journal and conference publications. Single-event effects (… …these effects. In this work we investigate single-event transient (SET) effects in… …of radiation effects on electronic devices, in particular, single event effects (SEEs… …x29;. 10 CHAPTER II BASICS OF SINGLE EVENT EFFECTS ON ELECTRONIC DEVICES The… …their vulnerability to single-event effects (SEEs). This can result in erroneous… 

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APA (6th Edition):

El Mamouni, F. (2012). Single-event-transient effects in sub-70 nm bulk and SOI FinFETs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07092012-155625/ ;

Chicago Manual of Style (16th Edition):

El Mamouni, Farah. “Single-event-transient effects in sub-70 nm bulk and SOI FinFETs.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-07092012-155625/ ;.

MLA Handbook (7th Edition):

El Mamouni, Farah. “Single-event-transient effects in sub-70 nm bulk and SOI FinFETs.” 2012. Web. 25 Feb 2020.

Vancouver:

El Mamouni F. Single-event-transient effects in sub-70 nm bulk and SOI FinFETs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-07092012-155625/ ;.

Council of Science Editors:

El Mamouni F. Single-event-transient effects in sub-70 nm bulk and SOI FinFETs. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-07092012-155625/ ;


Universidade do Rio Grande do Sul

18. Santos, André Flores dos. Análise do uso de redundância em circuitos gerados por síntese de alto nível para FPGA programado por SRAM sob falhas transientes.

Degree: 2017, Universidade do Rio Grande do Sul

Este trabalho consiste no estudo e análise da suscetibilidade a efeitos da radiação em projetos de circuitos gerados por ferramenta de Síntese de Alto Nível… (more)

Subjects/Keywords: Field-Programable Gate Arrays (FPGAs); Microeletrônica; Fpga; Triple Modular Redundance (TMR); Single Event Upset (SEU); Single Event Effects (SEEs); System-on-Chips (SoCs)

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APA (6th Edition):

Santos, A. F. d. (2017). Análise do uso de redundância em circuitos gerados por síntese de alto nível para FPGA programado por SRAM sob falhas transientes. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/178392

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Santos, André Flores dos. “Análise do uso de redundância em circuitos gerados por síntese de alto nível para FPGA programado por SRAM sob falhas transientes.” 2017. Thesis, Universidade do Rio Grande do Sul. Accessed February 25, 2020. http://hdl.handle.net/10183/178392.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Santos, André Flores dos. “Análise do uso de redundância em circuitos gerados por síntese de alto nível para FPGA programado por SRAM sob falhas transientes.” 2017. Web. 25 Feb 2020.

Vancouver:

Santos AFd. Análise do uso de redundância em circuitos gerados por síntese de alto nível para FPGA programado por SRAM sob falhas transientes. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2017. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10183/178392.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Santos AFd. Análise do uso de redundância em circuitos gerados por síntese de alto nível para FPGA programado por SRAM sob falhas transientes. [Thesis]. Universidade do Rio Grande do Sul; 2017. Available from: http://hdl.handle.net/10183/178392

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

19. Auden, Elizabeth Catherine. Heavy Ion-Induced Single Particle Displacement Damage in Silicon.

Degree: PhD, Electrical Engineering, 2013, Vanderbilt University

 Displacement damage from individual heavy ions results in discrete, measurable electrical degradation in 252Cf-irradiated silicon diodes. This work presents measurements of discrete increases in diode… (more)

Subjects/Keywords: single event effects; single event displacement damage; Shockley-Read-Hall generation; radiation effects; JFET diodes; leakage current; ions; generation region; fission fragments; femtoampere current measurements; electric field enhancement; displacement damage; diodes; depletion region; defects; defect density; current steps; current pulses; californium; single particle displacement damage

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APA (6th Edition):

Auden, E. C. (2013). Heavy Ion-Induced Single Particle Displacement Damage in Silicon. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11212013-144624/ ;

Chicago Manual of Style (16th Edition):

Auden, Elizabeth Catherine. “Heavy Ion-Induced Single Particle Displacement Damage in Silicon.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-11212013-144624/ ;.

MLA Handbook (7th Edition):

Auden, Elizabeth Catherine. “Heavy Ion-Induced Single Particle Displacement Damage in Silicon.” 2013. Web. 25 Feb 2020.

Vancouver:

Auden EC. Heavy Ion-Induced Single Particle Displacement Damage in Silicon. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-11212013-144624/ ;.

Council of Science Editors:

Auden EC. Heavy Ion-Induced Single Particle Displacement Damage in Silicon. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://etd.library.vanderbilt.edu/available/etd-11212013-144624/ ;


Brno University of Technology

20. Szurman, Karel. Využití moderních metod zvyšování spolehlivosti pro implementaci řídicího systému .

Degree: 2012, Brno University of Technology

 U leteckých řídicích a kritických systémů je nutné zaručit minimální úroveň odolnosti vůči poruchám a jejich vysokou spolehlivost. Na elektronické součástky těchto systémů působí nežádoucím… (more)

Subjects/Keywords: Letecká technika; řídicí systém; návrh systému; radiační efekty a poruchy; odolnost proti poruchám; moderní metody; spolehlivost; potlačení vlivu single event effects; TMR; FPGA.; Avionics; control system; system design; radiation effects and faults; fault tolerance; modern methods; dependability; single event effects mitigation; TMR; FPGA.

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APA (6th Edition):

Szurman, K. (2012). Využití moderních metod zvyšování spolehlivosti pro implementaci řídicího systému . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/53653

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Szurman, Karel. “Využití moderních metod zvyšování spolehlivosti pro implementaci řídicího systému .” 2012. Thesis, Brno University of Technology. Accessed February 25, 2020. http://hdl.handle.net/11012/53653.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Szurman, Karel. “Využití moderních metod zvyšování spolehlivosti pro implementaci řídicího systému .” 2012. Web. 25 Feb 2020.

Vancouver:

Szurman K. Využití moderních metod zvyšování spolehlivosti pro implementaci řídicího systému . [Internet] [Thesis]. Brno University of Technology; 2012. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/11012/53653.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Szurman K. Využití moderních metod zvyšování spolehlivosti pro implementaci řídicího systému . [Thesis]. Brno University of Technology; 2012. Available from: http://hdl.handle.net/11012/53653

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Costenaro, Enrico. Techniques pour l'évaluation et l'amélioration du comportement des technologies émergentes face aux fautes aléatoires : Techniques for the evaluation and the improvement of emergent technologies’ behavior facing random errors.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Grenoble Alpes

 L'objectif principal de cette thèse est de développer des techniques d'analyse et mitigation capables à contrer les effets des Evènements Singuliers (Single Event Effects) -… (more)

Subjects/Keywords: Événements singuliers; Événements singuliers upsets; Événements singuliers transitoire; Soft erreurs; Injection de fautes; Protection sélective; Single-event effects; Single-event upsets; Single-event transients; Soft errors; Fault-injection; Selective mitigation; 620

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APA (6th Edition):

Costenaro, E. (2015). Techniques pour l'évaluation et l'amélioration du comportement des technologies émergentes face aux fautes aléatoires : Techniques for the evaluation and the improvement of emergent technologies’ behavior facing random errors. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAT137

Chicago Manual of Style (16th Edition):

Costenaro, Enrico. “Techniques pour l'évaluation et l'amélioration du comportement des technologies émergentes face aux fautes aléatoires : Techniques for the evaluation and the improvement of emergent technologies’ behavior facing random errors.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed February 25, 2020. http://www.theses.fr/2015GREAT137.

MLA Handbook (7th Edition):

Costenaro, Enrico. “Techniques pour l'évaluation et l'amélioration du comportement des technologies émergentes face aux fautes aléatoires : Techniques for the evaluation and the improvement of emergent technologies’ behavior facing random errors.” 2015. Web. 25 Feb 2020.

Vancouver:

Costenaro E. Techniques pour l'évaluation et l'amélioration du comportement des technologies émergentes face aux fautes aléatoires : Techniques for the evaluation and the improvement of emergent technologies’ behavior facing random errors. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2020 Feb 25]. Available from: http://www.theses.fr/2015GREAT137.

Council of Science Editors:

Costenaro E. Techniques pour l'évaluation et l'amélioration du comportement des technologies émergentes face aux fautes aléatoires : Techniques for the evaluation and the improvement of emergent technologies’ behavior facing random errors. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAT137

22. Vibbert, Daniel Scott. An Enhanced Single-Event Charge Cancellation Technique for Sensitive Circuit Nodes.

Degree: MS, Electrical Engineering, 2018, Vanderbilt University

 An enhancement to an existing radiation hardening by design (RHBD) technique is proposed. The technique, Sensitive Node Active Charge Cancellation (SNACC), protects sensitive A/MS circuit… (more)

Subjects/Keywords: single-event hardening; single-event transients; single-event effects; radiation hardening by design

…radiation effects are induced and how they can be detrimental to electronic systems. Single-event… …given as a prerequisite to SNACC. Single-Events Overview Single-event effects are… …Single-event effects occur when an energetic particle interacts with a circuit’s semiconductor… …x5B;15] to understand single-event effects so that such models might be developed… …for the sole purpose of reducing the effects of charge sharing on single-event error… 

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APA (6th Edition):

Vibbert, D. S. (2018). An Enhanced Single-Event Charge Cancellation Technique for Sensitive Circuit Nodes. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-08152018-130817/ ;

Chicago Manual of Style (16th Edition):

Vibbert, Daniel Scott. “An Enhanced Single-Event Charge Cancellation Technique for Sensitive Circuit Nodes.” 2018. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-08152018-130817/ ;.

MLA Handbook (7th Edition):

Vibbert, Daniel Scott. “An Enhanced Single-Event Charge Cancellation Technique for Sensitive Circuit Nodes.” 2018. Web. 25 Feb 2020.

Vancouver:

Vibbert DS. An Enhanced Single-Event Charge Cancellation Technique for Sensitive Circuit Nodes. [Internet] [Masters thesis]. Vanderbilt University; 2018. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-08152018-130817/ ;.

Council of Science Editors:

Vibbert DS. An Enhanced Single-Event Charge Cancellation Technique for Sensitive Circuit Nodes. [Masters Thesis]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-08152018-130817/ ;


Universidade do Rio Grande do Sul

23. Assis, Thiago Rocha de. Analysis of transistor sizing and folding effectiveness to mitigate soft errors.

Degree: 2009, Universidade do Rio Grande do Sul

Este trabalho apresenta uma avaliação da eficiência do dimensionamento e particionamento (folding) de transistores para a eliminação ou redução de efeitos de radiação. Durante o… (more)

Subjects/Keywords: Radiation effects; Microeletrônica; Single event effect; Cmos; Transistor sizing; Deteccao : Erros; Tolerancia : Falhas; Folding; Microelectronics; Fault tolerance; Soft errors

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APA (6th Edition):

Assis, T. R. d. (2009). Analysis of transistor sizing and folding effectiveness to mitigate soft errors. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/31135

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Assis, Thiago Rocha de. “Analysis of transistor sizing and folding effectiveness to mitigate soft errors.” 2009. Thesis, Universidade do Rio Grande do Sul. Accessed February 25, 2020. http://hdl.handle.net/10183/31135.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Assis, Thiago Rocha de. “Analysis of transistor sizing and folding effectiveness to mitigate soft errors.” 2009. Web. 25 Feb 2020.

Vancouver:

Assis TRd. Analysis of transistor sizing and folding effectiveness to mitigate soft errors. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2009. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10183/31135.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Assis TRd. Analysis of transistor sizing and folding effectiveness to mitigate soft errors. [Thesis]. Universidade do Rio Grande do Sul; 2009. Available from: http://hdl.handle.net/10183/31135

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

24. Zhu, Xiaowei. Single event effects in commercial microprocessors using dynamic circuitry.

Degree: PhD, Electrical Engineering, 0000, Vanderbilt University

 In this work the impact of technology trends on alpha particle induced soft error rates in state-of-the-art commercial microprocessors has been investigated. At the device… (more)

Subjects/Keywords: soft error; microprocessor; dynamic circuit; single event effects

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APA (6th Edition):

Zhu, X. (0000). Single event effects in commercial microprocessors using dynamic circuitry. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/theses/available/etd-0319102-140903/ ;

Chicago Manual of Style (16th Edition):

Zhu, Xiaowei. “Single event effects in commercial microprocessors using dynamic circuitry.” 0000. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/theses/available/etd-0319102-140903/ ;.

MLA Handbook (7th Edition):

Zhu, Xiaowei. “Single event effects in commercial microprocessors using dynamic circuitry.” 0000. Web. 25 Feb 2020.

Vancouver:

Zhu X. Single event effects in commercial microprocessors using dynamic circuitry. [Internet] [Doctoral dissertation]. Vanderbilt University; 0000. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/theses/available/etd-0319102-140903/ ;.

Council of Science Editors:

Zhu X. Single event effects in commercial microprocessors using dynamic circuitry. [Doctoral Dissertation]. Vanderbilt University; 0000. Available from: http://etd.library.vanderbilt.edu/theses/available/etd-0319102-140903/ ;


Vanderbilt University

25. Assis, Thiago Rocha de. Soft error aware physical synthesis.

Degree: PhD, Electrical Engineering, 2015, Vanderbilt University

 To allow accurate analysis of Soft Errors by Electronic Design Automation (EDA) tools, analytical models were developed to estimate electrical characteristics of the single event.… (more)

Subjects/Keywords: single event transient; set pulse width; collected charge; radiation effects; electronic design automation; physical synthesis; soft error; reliability

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APA (6th Edition):

Assis, T. R. d. (2015). Soft error aware physical synthesis. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11242015-013303/ ;

Chicago Manual of Style (16th Edition):

Assis, Thiago Rocha de. “Soft error aware physical synthesis.” 2015. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-11242015-013303/ ;.

MLA Handbook (7th Edition):

Assis, Thiago Rocha de. “Soft error aware physical synthesis.” 2015. Web. 25 Feb 2020.

Vancouver:

Assis TRd. Soft error aware physical synthesis. [Internet] [Doctoral dissertation]. Vanderbilt University; 2015. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-11242015-013303/ ;.

Council of Science Editors:

Assis TRd. Soft error aware physical synthesis. [Doctoral Dissertation]. Vanderbilt University; 2015. Available from: http://etd.library.vanderbilt.edu/available/etd-11242015-013303/ ;


Arizona State University

26. Masand, Lovish. Radiation Effects Measurement Test Structure using GF 32-nm SOI process.

Degree: Electrical Engineering, 2017, Arizona State University

 This thesis describes the design of a Single Event Transient (SET) duration measurement test-structure on the Global Foundries (previously IBM) 32-nm silicon-on insulator (SOI) process.… (more)

Subjects/Keywords: Engineering; Capture Structure; Global Foundry SOI 32 nm Process; Measurement Structure; Pulse Width Broadening; Radiation Effects; Single Event Transient

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APA (6th Edition):

Masand, L. (2017). Radiation Effects Measurement Test Structure using GF 32-nm SOI process. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/44999

Chicago Manual of Style (16th Edition):

Masand, Lovish. “Radiation Effects Measurement Test Structure using GF 32-nm SOI process.” 2017. Masters Thesis, Arizona State University. Accessed February 25, 2020. http://repository.asu.edu/items/44999.

MLA Handbook (7th Edition):

Masand, Lovish. “Radiation Effects Measurement Test Structure using GF 32-nm SOI process.” 2017. Web. 25 Feb 2020.

Vancouver:

Masand L. Radiation Effects Measurement Test Structure using GF 32-nm SOI process. [Internet] [Masters thesis]. Arizona State University; 2017. [cited 2020 Feb 25]. Available from: http://repository.asu.edu/items/44999.

Council of Science Editors:

Masand L. Radiation Effects Measurement Test Structure using GF 32-nm SOI process. [Masters Thesis]. Arizona State University; 2017. Available from: http://repository.asu.edu/items/44999


Vanderbilt University

27. Loveless, Thomas Daniel. A generalized single-event analysis and hardening options for mixed-signal phase-locked loop circuits.

Degree: PhD, Electrical Engineering, 2009, Vanderbilt University

 A reliability concern of growing interest in the microelectronics community is the deleterious effect of ionizing radiation. The so-called "single events" â single particles which… (more)

Subjects/Keywords: Phase-locked loops; Single-Event Effects; Radiation Effects; Single-Event Transients; Transients; Circuit analysis

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APA (6th Edition):

Loveless, T. D. (2009). A generalized single-event analysis and hardening options for mixed-signal phase-locked loop circuits. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu//available/etd-08262009-132854/ ;

Chicago Manual of Style (16th Edition):

Loveless, Thomas Daniel. “A generalized single-event analysis and hardening options for mixed-signal phase-locked loop circuits.” 2009. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu//available/etd-08262009-132854/ ;.

MLA Handbook (7th Edition):

Loveless, Thomas Daniel. “A generalized single-event analysis and hardening options for mixed-signal phase-locked loop circuits.” 2009. Web. 25 Feb 2020.

Vancouver:

Loveless TD. A generalized single-event analysis and hardening options for mixed-signal phase-locked loop circuits. [Internet] [Doctoral dissertation]. Vanderbilt University; 2009. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu//available/etd-08262009-132854/ ;.

Council of Science Editors:

Loveless TD. A generalized single-event analysis and hardening options for mixed-signal phase-locked loop circuits. [Doctoral Dissertation]. Vanderbilt University; 2009. Available from: http://etd.library.vanderbilt.edu//available/etd-08262009-132854/ ;

28. Dodds, Nathaniel Anson. Single event latchup: hardening strategies, triggering mechanisms, and testing considerations.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

Single event latchup (SEL) is a serious reliability concern for CMOS integrated circuits (ICs), and can be especially problematic in the space radiation environment. It… (more)

Subjects/Keywords: laser; CMOS; radiation effects; single event latchup; single event effects; SOI

Single event effects (SEEs) are usually triggered by the charge generated in the… …applicable not only to single event latchup, but also to other types of single event effects… …dose rate effects (also known as transient ionizing radiation effects), and single… …event effects. Total dose effects are usually manifest as parametric degradation in a device… …device. Single event latchup (SEL) is perhaps the most well known of the hard errors… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Dodds, N. A. (2012). Single event latchup: hardening strategies, triggering mechanisms, and testing considerations. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11032012-225718/ ;

Chicago Manual of Style (16th Edition):

Dodds, Nathaniel Anson. “Single event latchup: hardening strategies, triggering mechanisms, and testing considerations.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-11032012-225718/ ;.

MLA Handbook (7th Edition):

Dodds, Nathaniel Anson. “Single event latchup: hardening strategies, triggering mechanisms, and testing considerations.” 2012. Web. 25 Feb 2020.

Vancouver:

Dodds NA. Single event latchup: hardening strategies, triggering mechanisms, and testing considerations. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-11032012-225718/ ;.

Council of Science Editors:

Dodds NA. Single event latchup: hardening strategies, triggering mechanisms, and testing considerations. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-11032012-225718/ ;


Vanderbilt University

29. Casey, Megan Colleen. Single-Event Effects in Digital CMOS Circuits Operating at Ultra-Low Power.

Degree: PhD, Electrical Engineering, 2009, Vanderbilt University

 With decreasing feature sizes, transistors are being added to ICs in consistently greater numbers, which is leading to dramatic increases in power consumption. Changing process… (more)

Subjects/Keywords: radiation effects; single-event effects; CMOS digital circuits; low-power circuits

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APA (6th Edition):

Casey, M. C. (2009). Single-Event Effects in Digital CMOS Circuits Operating at Ultra-Low Power. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12042009-210004/ ;

Chicago Manual of Style (16th Edition):

Casey, Megan Colleen. “Single-Event Effects in Digital CMOS Circuits Operating at Ultra-Low Power.” 2009. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-12042009-210004/ ;.

MLA Handbook (7th Edition):

Casey, Megan Colleen. “Single-Event Effects in Digital CMOS Circuits Operating at Ultra-Low Power.” 2009. Web. 25 Feb 2020.

Vancouver:

Casey MC. Single-Event Effects in Digital CMOS Circuits Operating at Ultra-Low Power. [Internet] [Doctoral dissertation]. Vanderbilt University; 2009. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-12042009-210004/ ;.

Council of Science Editors:

Casey MC. Single-Event Effects in Digital CMOS Circuits Operating at Ultra-Low Power. [Doctoral Dissertation]. Vanderbilt University; 2009. Available from: http://etd.library.vanderbilt.edu/available/etd-12042009-210004/ ;


Vanderbilt University

30. Hooten, Nicholas C. Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events.

Degree: PhD, Electrical Engineering, 2014, Vanderbilt University

 When ionizing radiation interacts with a semiconductor device, the resulting generation and collection of excess charge carriers can result in a brief transient current at… (more)

Subjects/Keywords: SEE; single-event effects; radiation effects in microelectronics; Two-photon absorption laser testing for SEE; SEE laser testing; device-level current transients

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hooten, N. C. (2014). Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03312014-121311/ ;

Chicago Manual of Style (16th Edition):

Hooten, Nicholas C. “Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events.” 2014. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-03312014-121311/ ;.

MLA Handbook (7th Edition):

Hooten, Nicholas C. “Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events.” 2014. Web. 25 Feb 2020.

Vancouver:

Hooten NC. Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events. [Internet] [Doctoral dissertation]. Vanderbilt University; 2014. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-03312014-121311/ ;.

Council of Science Editors:

Hooten NC. Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events. [Doctoral Dissertation]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-03312014-121311/ ;

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