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Addis Ababa University
1.
ASNAKE, SAHELE.
STUDY OF CRITICAL TEMPERATURE OF DILUTED MAGNETIC SEMICONDUCTORS (Ga,Mn)As
.
Degree: 2012, Addis Ababa University
URL: http://etd.aau.edu.et/dspace/handle/123456789/1286 
► (Ga;Mn)As is a very extensively studied diluted magnetic semiconductor. This type of materials bridge over the incompatibilities in metal-semiconductor in-terfaces in electron- ics components and…
(more)
▼ (Ga;Mn)As is a very extensively studied diluted magnetic
semiconductor. This type of
materials bridge over the incompatibilities in metal-
semiconductor in-terfaces in electron-
ics components and which will have an enormous potential for future spintronics appli-
cations, where both charge and spin degrees of freedom can be employed simultaneously.
In this work an approach based on the green's function to the Ruderman-Kittel-Kasuya-
Yosida quantum spin model is used to calculate the magnetic excitation spectrum in the
widely studied (Ga1xMnx)As diluted magnetic semiconductors. The resulting magnetic
excitation spectrum is then used to estimate The total number of excited magnons, mag-
netization, and Curie temperature of (Ga;Mn)As diluted magnetic
semiconductor. The
equation of motion for the magnon Greens function within Tyablikov approximation is
solved numerically for systems in which S is larger than 1
2 .
Advisors/Committee Members: Prof. P. Singh (advisor).
Subjects/Keywords: magnetic semiconductor
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APA (6th Edition):
ASNAKE, S. (2012). STUDY OF CRITICAL TEMPERATURE OF DILUTED MAGNETIC SEMICONDUCTORS (Ga,Mn)As
. (Thesis). Addis Ababa University. Retrieved from http://etd.aau.edu.et/dspace/handle/123456789/1286
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
ASNAKE, SAHELE. “STUDY OF CRITICAL TEMPERATURE OF DILUTED MAGNETIC SEMICONDUCTORS (Ga,Mn)As
.” 2012. Thesis, Addis Ababa University. Accessed February 27, 2021.
http://etd.aau.edu.et/dspace/handle/123456789/1286.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
ASNAKE, SAHELE. “STUDY OF CRITICAL TEMPERATURE OF DILUTED MAGNETIC SEMICONDUCTORS (Ga,Mn)As
.” 2012. Web. 27 Feb 2021.
Vancouver:
ASNAKE S. STUDY OF CRITICAL TEMPERATURE OF DILUTED MAGNETIC SEMICONDUCTORS (Ga,Mn)As
. [Internet] [Thesis]. Addis Ababa University; 2012. [cited 2021 Feb 27].
Available from: http://etd.aau.edu.et/dspace/handle/123456789/1286.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
ASNAKE S. STUDY OF CRITICAL TEMPERATURE OF DILUTED MAGNETIC SEMICONDUCTORS (Ga,Mn)As
. [Thesis]. Addis Ababa University; 2012. Available from: http://etd.aau.edu.et/dspace/handle/123456789/1286
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Addis Ababa University
2.
Mekonnen, Abebe.
OPTICAL AND ELECTRONIC CORRELATION EFFECTS IN SEMICONDUCTOR NANOSTRUCTURES WITH EMPHASIS ON SILICON NANOSTRUCTURE
.
Degree: 2013, Addis Ababa University
URL: http://etd.aau.edu.et/dspace/handle/123456789/1352
► In this thesis we theoretically investigated static and dynamic correlation effects in semiconductor nanostructures. Structural inhomogneity and confinement quantization effects make this class of materials…
(more)
▼ In this thesis we theoretically investigated static and dynamic correlation effects in
semiconductor nanostructures. Structural inhomogneity and confinement quantization effects make this class of materials exhibit exotic properties under different experimental conditions. Time dependent coupling of the local states under time dependent perturbations and the fluctuation of the proximity couplings in the length scale of tunneling give rise to dynamical correlations that put their signature in the optical and transport properties. Based on the Orbital Free Local Density Approximation (OF-LDA), the exchange and correlation contribution to the orbital energy and the size dependent nature of the threshold for optical absorption are studied. The effects of dynamical correlations between the states in a single nanostructure and the effects of dynamical correlations between the states in proximity coupled configurations are investigated with the Non Equilibrium Green Function Formalism (NEGF) as the theoretical frame work.
The theoretical formulation of the non equilibrium dynamical analysis is used to describe the coherent regime optical and transport phenomena in
semiconductor nanostructures. The results demonstrate that the presence of strong coupling between electronic states in
semiconductor nanostructures leads to the formation of d states. First we have shown the emergence of collapse and revival phenomenon during the coherent regime absorption in a single dot. We presented qualitative and quantitative description of the Rabi oscillation. The dependence on the mean photon number and on the strength of the couplings between electronic states is demonstrated. We found that similar phenomenon in a wide range of many body system could be satisfactorily described assuming entanglement of the lower levels. Secondly, we theoretically investigated correlation effects in tunnel coupled nanostructures. The quantum blockade phenomenon in wide experimental samples is
v
explored. The appearance of double dot structures as a time shared entangler is predicted. It is also found that the presence of a transparent boundary between quantum dots lead to the formation of local entangled states that are too difficult for experimental demonstration. Lastly the possible technological value of a double dot –in series configuration is presented. Its operation as electron-spin polarization is discussed and its potential for application as IR detector is proposed.
Advisors/Committee Members: Prof. P. Singh (advisor).
Subjects/Keywords: NANOSTRUCTURES;
SEMICONDUCTOR
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APA (6th Edition):
Mekonnen, A. (2013). OPTICAL AND ELECTRONIC CORRELATION EFFECTS IN SEMICONDUCTOR NANOSTRUCTURES WITH EMPHASIS ON SILICON NANOSTRUCTURE
. (Thesis). Addis Ababa University. Retrieved from http://etd.aau.edu.et/dspace/handle/123456789/1352
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Mekonnen, Abebe. “OPTICAL AND ELECTRONIC CORRELATION EFFECTS IN SEMICONDUCTOR NANOSTRUCTURES WITH EMPHASIS ON SILICON NANOSTRUCTURE
.” 2013. Thesis, Addis Ababa University. Accessed February 27, 2021.
http://etd.aau.edu.et/dspace/handle/123456789/1352.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Mekonnen, Abebe. “OPTICAL AND ELECTRONIC CORRELATION EFFECTS IN SEMICONDUCTOR NANOSTRUCTURES WITH EMPHASIS ON SILICON NANOSTRUCTURE
.” 2013. Web. 27 Feb 2021.
Vancouver:
Mekonnen A. OPTICAL AND ELECTRONIC CORRELATION EFFECTS IN SEMICONDUCTOR NANOSTRUCTURES WITH EMPHASIS ON SILICON NANOSTRUCTURE
. [Internet] [Thesis]. Addis Ababa University; 2013. [cited 2021 Feb 27].
Available from: http://etd.aau.edu.et/dspace/handle/123456789/1352.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Mekonnen A. OPTICAL AND ELECTRONIC CORRELATION EFFECTS IN SEMICONDUCTOR NANOSTRUCTURES WITH EMPHASIS ON SILICON NANOSTRUCTURE
. [Thesis]. Addis Ababa University; 2013. Available from: http://etd.aau.edu.et/dspace/handle/123456789/1352
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Rice University
3.
Ball, Jason.
Measurement of Magnetoplasmon Resonance in a High-Mobility 2-Dimensional Dot Array using a Micro-calorimeter.
Degree: MS, Natural Sciences, 2013, Rice University
URL: http://hdl.handle.net/1911/76467
► We used a calorimetric method to measure the microwave absorption of a high-mobility 2-dimensional electron gas in small magnetic fields. The calorimeter responded well to…
(more)
▼ We used a calorimetric method to measure the microwave absorption of a high-mobility 2-dimensional electron gas in small magnetic fields. The calorimeter responded well to the signal, even when reduced to a single dot. Curiously, in the smaller dot lattices we found the zero-field plasmon resonances to be much less the than expected values; however a second, larger sample yielded better values. As a result of the high mobility of the sample we also saw evidence of the second harmonic of the plasmon frequency coupling with the cyclotron resonance, although a corresponding edge mode was not found. The calorimetric method appears to be a valid means of measuring signal absorption in a 2DEG and has potential for probing other types of systems.
Advisors/Committee Members: Du, Rui-Rui (advisor), Kiang, Ching-Hwa (committee member), Foster, Matthew (committee member).
Subjects/Keywords: Semiconductor; Calorimetry
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APA (6th Edition):
Ball, J. (2013). Measurement of Magnetoplasmon Resonance in a High-Mobility 2-Dimensional Dot Array using a Micro-calorimeter. (Masters Thesis). Rice University. Retrieved from http://hdl.handle.net/1911/76467
Chicago Manual of Style (16th Edition):
Ball, Jason. “Measurement of Magnetoplasmon Resonance in a High-Mobility 2-Dimensional Dot Array using a Micro-calorimeter.” 2013. Masters Thesis, Rice University. Accessed February 27, 2021.
http://hdl.handle.net/1911/76467.
MLA Handbook (7th Edition):
Ball, Jason. “Measurement of Magnetoplasmon Resonance in a High-Mobility 2-Dimensional Dot Array using a Micro-calorimeter.” 2013. Web. 27 Feb 2021.
Vancouver:
Ball J. Measurement of Magnetoplasmon Resonance in a High-Mobility 2-Dimensional Dot Array using a Micro-calorimeter. [Internet] [Masters thesis]. Rice University; 2013. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/1911/76467.
Council of Science Editors:
Ball J. Measurement of Magnetoplasmon Resonance in a High-Mobility 2-Dimensional Dot Array using a Micro-calorimeter. [Masters Thesis]. Rice University; 2013. Available from: http://hdl.handle.net/1911/76467
Georgia Tech
4.
Hu, Weize.
Surface chemical studies of metal oxide nanocrystals supporting infrared localized surface plasmon resonances.
Degree: PhD, Chemical and Biomolecular Engineering, 2018, Georgia Tech
URL: http://hdl.handle.net/1853/61649
► Heavily doped metal oxide nanocrystals exhibit a tunable localized surface plasmon resonance in the infrared, a property that is promising for applications in photonics, spectroscopy,…
(more)
▼ Heavily doped metal oxide nanocrystals exhibit a tunable localized surface plasmon resonance in the infrared, a property that is promising for applications in photonics, spectroscopy, and photochemistry. Although the plasmonic metal oxide nanocrystals were first demonstrated nearly ten years ago, the interplay between localized surface plasmon, dopants and surface adsorbates remains elusive. In this thesis, we use time-resolved infrared Fourier transform spectroscopy to identify the previously unknown, yet critical, role of gas-phase redox reaction on plasmonic properties in colloidal synthesized indium tin oxide, aluminum doped zinc oxide and gallium doped zinc oxide nanocrystals. Our experiments identify the key role of dopants and redox reaction on the infrared optical properties and show that changes to interstitial oxygen concentration are critical to the LSPRs in metal oxide nanocrystals. For the first time, we also show that the deep subwavelength confinement of infrared light by plasmonic nanocrystals can accelerate a heterogeneous chemical process. This work brings attention to low-energy localized surface plasmon resonances and their coupling with surface adsorbates. The fundamental insights of surface chemical studies promise unprecedented control of metal oxide plasmonic properties and functionalities.
Advisors/Committee Members: Filler, Michael A. (advisor), Jones, Christopher W. (committee member), Lively, Ryan P. (committee member), Lin, Zhiqun (committee member), Cola, Baratunde A. (committee member).
Subjects/Keywords: Semiconductor; Nanomaterial
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APA (6th Edition):
Hu, W. (2018). Surface chemical studies of metal oxide nanocrystals supporting infrared localized surface plasmon resonances. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/61649
Chicago Manual of Style (16th Edition):
Hu, Weize. “Surface chemical studies of metal oxide nanocrystals supporting infrared localized surface plasmon resonances.” 2018. Doctoral Dissertation, Georgia Tech. Accessed February 27, 2021.
http://hdl.handle.net/1853/61649.
MLA Handbook (7th Edition):
Hu, Weize. “Surface chemical studies of metal oxide nanocrystals supporting infrared localized surface plasmon resonances.” 2018. Web. 27 Feb 2021.
Vancouver:
Hu W. Surface chemical studies of metal oxide nanocrystals supporting infrared localized surface plasmon resonances. [Internet] [Doctoral dissertation]. Georgia Tech; 2018. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/1853/61649.
Council of Science Editors:
Hu W. Surface chemical studies of metal oxide nanocrystals supporting infrared localized surface plasmon resonances. [Doctoral Dissertation]. Georgia Tech; 2018. Available from: http://hdl.handle.net/1853/61649
University of Texas – Austin
5.
Covey, John Luther.
Ultrafast all-optical switching via grating-based fabry-perot resonators and surface normal fiber-to-waveguide couplers.
Degree: PhD, Electrical Engineering, 2014, University of Texas – Austin
URL: http://hdl.handle.net/2152/28046
► Electronic microchips have now firmly plateaued in switching speed. A promising solution for increasing performance on unparallelizable tasks is to switch digital data purely in…
(more)
▼ Electronic microchips have now firmly plateaued in switching speed. A promising solution for increasing performance on unparallelizable tasks is to switch digital data purely in the optical domain on a photonic chip, as all-optical switching can reach up to terahertz speeds and beyond. Because ultrafast optical effects are weak phenomena, materials with extremely high nonlinear sensitivity must be developed, and very high optical intensities and coupling efficiencies are required to adequately switch data streams of light. In this thesis, unique all-optical platforms, waveguides, fiber-waveguide grating couplers, and an ultrafast optical switch were experimentally demonstrated as proofs-of-concept for the validity of densely integrated all-optical switches. Two horizontal slot waveguiding structures were designed and fabricated from scratch: a multiple horizontal slot waveguide with polycrystalline silicon sandwiching third-order nonlinear slots and a nonlinear cover-cladding with slot-like behavior over a thin crystalline silicon waveguide. Perfectly vertical grating couplers were then designed from a novel genetic algorithm, fabricated, and experimentally tested for both platforms with two promising nonlinear materials: silicon nanocrystals or a supra-molecular assembly, DDMEBT. Vertical grating couplers in the multiple horizontal slot waveguide achieved a theoretical coupling efficiency of 63% and an experimental coupling efficiency of 60%, which is the highest coupling efficiency into nonlinear slot waveguides to date. Vertical grating couplers for the cover-slot waveguide experimentally demonstrated a coupling efficiency of 38% and an extrapolated 1 dB bandwidth of 66 nm, the largest grating-coupled 1 dB bandwidth obtained for slot waveguides to date. A grating coupler was then designed to be included as one of two grating reflectors in a nonlinear resonator switch. Coupled mode theory and vectorial eigenmode propagation simulations were used to optimally design the grating coupler/resonator device, resulting in a record low footprint of 710 μm² per combined switch and fiber coupler device. The third-order nonlinear molecular material, DDMEBT, was, for the first time, successfully spun onto pre-patterned silicon-on-insulator chips with repeatable, defect-free results. Extremely sensitive experimental autocorrelation of the resonator's impulse response yielded output pulse durations as low as 600 femtoseconds. At high power and low pulse repetition rates, the switch's resonances redshifted by 4 nm with 4 dB of switching contrast, revealing an ultrafast Kerr effect which matched previous works. The resonator switch is therefore capable of modulating a single optical carrier frequency at 1 THz and switching an optical data stream at 500 GHz. These are the fastest switching speeds demonstrated by an integrated all-optical switch and validate the proof-of-concept needed for a future of densely integrated all-optical processing.
Advisors/Committee Members: Chen, Ray T. (advisor).
Subjects/Keywords: Semiconductor; Photonics
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APA ·
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APA (6th Edition):
Covey, J. L. (2014). Ultrafast all-optical switching via grating-based fabry-perot resonators and surface normal fiber-to-waveguide couplers. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/28046
Chicago Manual of Style (16th Edition):
Covey, John Luther. “Ultrafast all-optical switching via grating-based fabry-perot resonators and surface normal fiber-to-waveguide couplers.” 2014. Doctoral Dissertation, University of Texas – Austin. Accessed February 27, 2021.
http://hdl.handle.net/2152/28046.
MLA Handbook (7th Edition):
Covey, John Luther. “Ultrafast all-optical switching via grating-based fabry-perot resonators and surface normal fiber-to-waveguide couplers.” 2014. Web. 27 Feb 2021.
Vancouver:
Covey JL. Ultrafast all-optical switching via grating-based fabry-perot resonators and surface normal fiber-to-waveguide couplers. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2014. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/2152/28046.
Council of Science Editors:
Covey JL. Ultrafast all-optical switching via grating-based fabry-perot resonators and surface normal fiber-to-waveguide couplers. [Doctoral Dissertation]. University of Texas – Austin; 2014. Available from: http://hdl.handle.net/2152/28046
University of Rochester
6.
Sidor, Daniel.
Surface conduction in III-V semiconductor infrared
detector materials.
Degree: PhD, 2017, University of Rochester
URL: http://hdl.handle.net/1802/32749
► III-V semiconductors are increasingly used to produce high performance infrared photodetectors; however a signicant challenge inherent to working with these materials is presented by unintended…
(more)
▼ III-V semiconductors are increasingly used to
produce high performance infrared photodetectors;
however a
signicant challenge inherent to working with these materials
is
presented by unintended electrical conduction pathways that form
along their surfaces.
Resulting leakage currents contribute to
system noise and are ineectively
mitigated by device cooling, and
therefore limit ultimate performance. When the
mechanism of
surface conduction is understood, the unipolar barrier device
architecture
oers a potential solution. III-V bulk unipolar
barrier detectors that eectively
suppress surface leakage have
approached the performance of the best II-VI pn-based
structures.
This thesis begins with a review of empirically determined Schottky
barrier heights
and uses this information to present a simple
model of semiconductor surface conductivity.
The model is
validated through measurements of degenerate n-type surface
conductivity on InAs pn junctions, and non-degenerate surface
conductivity on
GaSb pn junctions. It is then extended, along with
design principles inspired by the
InAs-based nBn detector, to
create a flat-band pn-based unipolar barrier detector
possessing a
conductive surface but free of detrimental surface leakage
current.
Consideration is then given to the relative success of
these and related bulk detectors in
suppressing surface leakage
when compared to analogous superlattice-based designs,
and general
limitations of unipolar barriers in suppressing surface leakage are
proposed.
Finally, refinements to the molecular beam epitaxy
crystal growth techniques
used to produce InAs-based unipolar
barrier heterostructure devices are discussed.
Improvements
leading to III-V device performance well within an order of
magnitude
of the state-of-the-art are
demonstrated.
Subjects/Keywords: Infrared; Photodetector; Semiconductor
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APA (6th Edition):
Sidor, D. (2017). Surface conduction in III-V semiconductor infrared
detector materials. (Doctoral Dissertation). University of Rochester. Retrieved from http://hdl.handle.net/1802/32749
Chicago Manual of Style (16th Edition):
Sidor, Daniel. “Surface conduction in III-V semiconductor infrared
detector materials.” 2017. Doctoral Dissertation, University of Rochester. Accessed February 27, 2021.
http://hdl.handle.net/1802/32749.
MLA Handbook (7th Edition):
Sidor, Daniel. “Surface conduction in III-V semiconductor infrared
detector materials.” 2017. Web. 27 Feb 2021.
Vancouver:
Sidor D. Surface conduction in III-V semiconductor infrared
detector materials. [Internet] [Doctoral dissertation]. University of Rochester; 2017. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/1802/32749.
Council of Science Editors:
Sidor D. Surface conduction in III-V semiconductor infrared
detector materials. [Doctoral Dissertation]. University of Rochester; 2017. Available from: http://hdl.handle.net/1802/32749
Anna University
7.
Jude vimal michael R.
Doped semiconductor Nanostructures and their
Photocatalytic and biological Applications;.
Degree: Doped semiconductor Nanostructures and their
Photocatalytic and biological Applications, 2015, Anna University
URL: http://shodhganga.inflibnet.ac.in/handle/10603/33166
► A material in the nano size regime has unique properties due to newlinequantum confinement They are called nanomaterials and their study as newlinerevolutionized the materials…
(more)
▼ A material in the nano size regime has unique
properties due to newlinequantum confinement They are called
nanomaterials and their study as newlinerevolutionized the
materials science field They form the class of materials
newlinewhich found in depth study and research in last decade among
them is newlinesemiconductor nanostructures In the present study
among the various newlinesynthesis methods available solution
combustion synthesis is opted since its newlinepayback time for
commercial applications is less and also the property can be
newlinetuned merely adjusting the fuel concentrations The porosity
and high surface newlinearea materials can be prepared by this
method find applications in catalysis newlineAnother method of
synthesis is surfactant assisted and amine newlinedirected
synthesis of semiconductor nanostructures newline newline
newline
reference p169-196.
Advisors/Committee Members: Umapathy M J.
Subjects/Keywords: Doped semiconductor; Nanomaterials
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APA (6th Edition):
R, J. v. m. (2015). Doped semiconductor Nanostructures and their
Photocatalytic and biological Applications;. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/33166
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
R, Jude vimal michael. “Doped semiconductor Nanostructures and their
Photocatalytic and biological Applications;.” 2015. Thesis, Anna University. Accessed February 27, 2021.
http://shodhganga.inflibnet.ac.in/handle/10603/33166.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
R, Jude vimal michael. “Doped semiconductor Nanostructures and their
Photocatalytic and biological Applications;.” 2015. Web. 27 Feb 2021.
Vancouver:
R Jvm. Doped semiconductor Nanostructures and their
Photocatalytic and biological Applications;. [Internet] [Thesis]. Anna University; 2015. [cited 2021 Feb 27].
Available from: http://shodhganga.inflibnet.ac.in/handle/10603/33166.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
R Jvm. Doped semiconductor Nanostructures and their
Photocatalytic and biological Applications;. [Thesis]. Anna University; 2015. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/33166
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Texas A&M University
8.
Park, Yerok.
Plasmonic Enhancement of Mn2+ Luminescence and Application of Temperature-Dependent Mn2+ Luminescence.
Degree: PhD, Chemistry, 2014, Texas A&M University
URL: http://hdl.handle.net/1969.1/154129
► Doping semiconductor nanocrystals, commonly known as quantum dots (QDs), has attracted significant attention from the scientific community due to the highly tunable nature of the…
(more)
▼ Doping
semiconductor nanocrystals, commonly known as quantum dots (QDs), has attracted significant attention from the scientific community due to the highly tunable nature of the physical properties, such as optical, electrical, opto-magnetic properties, with respect to both size and dopant type/concentration. In this dissertation, Mn-doped CdS/ZnS (core/shell) QDs were used as a model system to study the characteristics of dopant luminescence coupled with plasmonic metal nanoparticles (MNPs) and its application as a nano-thermometer using temperature dependent Mn luminescence.
In the first part of this dissertation, plasmon-enhanced Mn luminescence from the Mn-doped CdS/ZnS QDs near plasmonic MNPs was studied. Rapid intraparticle energy transfer between exciton and Mn, occurring on a few picoseconds time scale, separates the absorber (exciton) from the emitter (Mn), whose emission is detuned far from the plasmonic absorption of the MNP. The rapid temporal separation of the absorber and emitter combined with the reduced spectral overlap between Mn and plasmonic MNP suppresses the quenching of the luminescence while taking advantage of the plasmon-enhanced excitation. The plasmon enhancement of exciton and Mn luminescence intensities in undoped and doped QDs were simultaneously compared as a function of the distance between MNP and QD layers in a multilayer structure to examine the expected advantage of the reduced quenching in the sensitized luminescence. At the optimum MNP-QD layer distance, Mn luminescence exhibits stronger net enhancement (ca. twice) than that of the exciton, which can be explained with a model incorporating fast sensitization along with reduced emitter-MNP spectral overlap.
In the second part, ratiometric thermometry on Mn luminescence spectrum was performed using Mn-doped CdS/ZnS core/shell QDs that have a large local lattice strain on Mn site, which results in the enhanced temperature dependence of the bandwidth and peak position. Mn luminescence spectral lineshape is highly robust with respect to the change in the polarity, phase and pH of the surrounding medium and aggregation of the QDs, showing great potential in temperature imaging under chemically heterogeneous environment. The temperature sensitivity (ΔIR/IR = 0.5%/K at 293 K, IR = intensity ratio at two different wavelengths) is highly linear in a wide range of temperatures from cryogenic to above-ambient temperatures. Surface temperature imaging was demonstrated on a cryo-cooling device showing the temperature variation of ~200 K (77–260 K) by imaging the luminescence of the QD film formed by simple spin coating, taking advantage of the environment-insensitive luminescence.
Advisors/Committee Members: Son, Dong Hee (advisor), Batteas, James (committee member), Hilty, Christian (committee member), Han, Arum (committee member).
Subjects/Keywords: Doped semiconductor nanocrystals
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APA ·
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APA (6th Edition):
Park, Y. (2014). Plasmonic Enhancement of Mn2+ Luminescence and Application of Temperature-Dependent Mn2+ Luminescence. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/154129
Chicago Manual of Style (16th Edition):
Park, Yerok. “Plasmonic Enhancement of Mn2+ Luminescence and Application of Temperature-Dependent Mn2+ Luminescence.” 2014. Doctoral Dissertation, Texas A&M University. Accessed February 27, 2021.
http://hdl.handle.net/1969.1/154129.
MLA Handbook (7th Edition):
Park, Yerok. “Plasmonic Enhancement of Mn2+ Luminescence and Application of Temperature-Dependent Mn2+ Luminescence.” 2014. Web. 27 Feb 2021.
Vancouver:
Park Y. Plasmonic Enhancement of Mn2+ Luminescence and Application of Temperature-Dependent Mn2+ Luminescence. [Internet] [Doctoral dissertation]. Texas A&M University; 2014. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/1969.1/154129.
Council of Science Editors:
Park Y. Plasmonic Enhancement of Mn2+ Luminescence and Application of Temperature-Dependent Mn2+ Luminescence. [Doctoral Dissertation]. Texas A&M University; 2014. Available from: http://hdl.handle.net/1969.1/154129
University of Johannesburg
9.
Mulder, David Jacobus.
Submikrosekondeskakeling van hoogspanninspulse met seriegeskakelde tiristors.
Degree: 2014, University of Johannesburg
URL: http://hdl.handle.net/10210/10082
► M.Ing.
Power supplies for pulsed laser applications are required to produce high energy pulses of microsecond and sub microsecond duration. Gas phase switches have traditionally…
(more)
▼ M.Ing.
Power supplies for pulsed laser applications are required to produce high energy pulses of microsecond and sub microsecond duration. Gas phase switches have traditionally been used in these applications. The exorbitant replacement as well as running costs, coupled with the limited lifetime of these switches, has led to the investigation of the implementation of an equivalent semiconductor switch. The semiconductor switch consists of thyristors coupled in series. This switch is connected to a two stage ferrite pulse compressor in order to achieve the required output pulse shape. The use of series coupled thyristors as high voltage switches in fast switching applications has been limited to laser and radar applications. Little has been published about work in this field and it was necessary to investigate the characteristics of the switching elements, under pulsed conditions, in order to optimise the switching and conduction losses of the elements as well as the switch as a whole. This investigation led to the development of an 18 kV switch which produces 750 nanosecond pulses at a repetition rate of 10 kHz. The applicability of similar switches in the radar and laser fields is discussed.
Subjects/Keywords: Semiconductor switches; Thyristors
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APA (6th Edition):
Mulder, D. J. (2014). Submikrosekondeskakeling van hoogspanninspulse met seriegeskakelde tiristors. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/10082
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Mulder, David Jacobus. “Submikrosekondeskakeling van hoogspanninspulse met seriegeskakelde tiristors.” 2014. Thesis, University of Johannesburg. Accessed February 27, 2021.
http://hdl.handle.net/10210/10082.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Mulder, David Jacobus. “Submikrosekondeskakeling van hoogspanninspulse met seriegeskakelde tiristors.” 2014. Web. 27 Feb 2021.
Vancouver:
Mulder DJ. Submikrosekondeskakeling van hoogspanninspulse met seriegeskakelde tiristors. [Internet] [Thesis]. University of Johannesburg; 2014. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/10210/10082.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Mulder DJ. Submikrosekondeskakeling van hoogspanninspulse met seriegeskakelde tiristors. [Thesis]. University of Johannesburg; 2014. Available from: http://hdl.handle.net/10210/10082
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Victoria University of Wellington
10.
Xu, Ying.
Synthesis and Characterization of Tin and Germanium Based Semiconductor Nanocrystals.
Degree: 2010, Victoria University of Wellington
URL: http://hdl.handle.net/10063/4213
► Inorganic nanomaterials are being actively researched due to their unique physical and chemical properties. These materials can be used for a wide variety of applications…
(more)
▼ Inorganic nanomaterials are being actively researched due to their unique physical and chemical properties. These materials can be used for a wide variety of applications and technologies which have stimulated research into the discovery, understanding and control of the morphology of materials at the nanoscale. Biologists have recently integrated biomaterials with
semiconductor nanoparticles to expand their applications to include biosensing, bioimaging and therapeutic strategies. Since the water solubility of
semiconductor nanoparticles is crucial for bioapplications, the fabrication of water-soluble
semiconductor nanocrystals with tailored properties has become more significant.
This thesis is focused on the solution phase synthesis of nanoparticles and nanowires containing the element tin. This includes tin nanoparticles, tingermanium alloy nanowires, tin sulphide nanoparticles and tin telluride nanoparticles. The aim of this research was to synthesize nanocrystals with tightly controlled size and shape for various applications,in particular for bioapplications. The properties, potential applications and crystal structure of target materials have been discussed in Chapter 1.
The target materials synthesized by using chemical reaction in the presence of surfactant were characterized primarily by Transmission Electron Microscopy (TEM), Energy Dispersive X-ray Spectroscopy (EDX) and Selected Area Electron Diffraction (SAED). Powder X-ray Diffraction (XRD), Scanning Transmission Electron Microscopy (STEM), Scanning Electron Microscopy (SEM), Ultraviolet-Visible Microscopy Absorption (UV-VIS), Fourier Transform Infrared (FTIR), Photoluminescence (PL) and Diffuse Reflectance were also used extensively (Chapter 2).
The third chapter of this thesis focuses on the the development of a facile and cheap route for the synthesis of tin nanoparticles by reducing a tin precursor in an organic solvent. The low-melting tin nanoparticles have been considered as a good catalyst for the growth of
semiconductor nanowires.
The fourth chapter in this thesis focuses on the development of a convenient synthesis of tin germanium alloy nanowires via solution-liquid-solid growth (SLS). Tin germanium alloy nanowires were synthesized through a self-catalyzed process in which the wires were grown from in situ made Sn droplets and Ge(Ph)₃Cl. The factors affecting morphology were ascertained and the growth direction, composition, local crystal structure and possible growth mechanism have been investigated.
The fifth chapter in this thesis focuses on the development of a novel one-pot synthesis of water-soluble SnS nanoparticles. The synthesis of SnS nanoparticles involves the reaction of inorganic starting materials SnBr₂ and Na₂S in the presence of various ethanolamine derivatives in ethylene glycol. Optical studies of as synthesized SnS nanoparticle show size dependent effects in both absorbance and reflectivity.
The sixth chapter in this thesis focuses on the development of a facile direct synthesis of water dispersible SnTe…
Advisors/Committee Members: Tilley, Richard, Al-Salim, Najeh.
Subjects/Keywords: Semiconductor; Germanium; Tin
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APA (6th Edition):
Xu, Y. (2010). Synthesis and Characterization of Tin and Germanium Based Semiconductor Nanocrystals. (Doctoral Dissertation). Victoria University of Wellington. Retrieved from http://hdl.handle.net/10063/4213
Chicago Manual of Style (16th Edition):
Xu, Ying. “Synthesis and Characterization of Tin and Germanium Based Semiconductor Nanocrystals.” 2010. Doctoral Dissertation, Victoria University of Wellington. Accessed February 27, 2021.
http://hdl.handle.net/10063/4213.
MLA Handbook (7th Edition):
Xu, Ying. “Synthesis and Characterization of Tin and Germanium Based Semiconductor Nanocrystals.” 2010. Web. 27 Feb 2021.
Vancouver:
Xu Y. Synthesis and Characterization of Tin and Germanium Based Semiconductor Nanocrystals. [Internet] [Doctoral dissertation]. Victoria University of Wellington; 2010. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/10063/4213.
Council of Science Editors:
Xu Y. Synthesis and Characterization of Tin and Germanium Based Semiconductor Nanocrystals. [Doctoral Dissertation]. Victoria University of Wellington; 2010. Available from: http://hdl.handle.net/10063/4213
University of Southern California
11.
Madaria, Anuj Rahul.
Synthesis, characterization and application of metal and
semiconductor nanowires.
Degree: PhD, Materials Science and Engineering, 2012, University of Southern California
URL: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6296
► Nanostructured materials such as nanowires have attracted significant attention in the past two decades. Both metallic and semiconducting nanowires have been demonstrated as important building…
(more)
▼ Nanostructured materials such as nanowires have
attracted significant attention in the past two decades. Both
metallic and semiconducting nanowires have been demonstrated as
important building blocks for numerous electronic and
optoelectronic device applications. In this thesis, we have
demonstrated a scalable route for synthesizing vertically aligned
semiconducting nanowires using nanosphere lithography (NSL)
technique in combination with selected area metal organic chemical
vapor deposition (SA-MOCVD). Comparable optical properties were
observed between the nanowires produced by NSL patterning technique
and nanowires produced by using more expensive and slow electron
beam lithography. We have also used capacitance-voltage measurement
technique to determine the doping level in these nanowire arrays.
In metallic nanowires, we have demonstrated fabrication of high
performance transparent conductive electrodes by using Ag nanowires
and proposed a technique to synthesis thin Ag nanowires which can
have applications in various optoelectronic devices. ❧ This
dissertation describes the above-mentioned aspects in detail and
accordingly consists of seven chapters. Following an overview and
an introduction of fundamental knowledge of nanolithography and
transparent conductive electrodes in Chapter 1, Chapter 2 discusses
the scalable nanosphere lithography patterning and selected area
growth of vertically aligned GaAs nanowire arrays, a route towards
optimized optical absorption and reflection. ❧ Chapter 3 discusses
the continued work on GaAs nanowire array and employs the use of
capacitance-voltage measurement technique to determine the doping
level of these nanowires which is important for using these
nanowires for fabrication of any electronic devices. ❧ Chapter 4
deals with an important issue of replacement of traditional ITO as
a transparent conductive electrode (TCE) for optoelectronic
devices. There is a need for replacement of ITO due to several
drawback associated with ITO as will be discussed in detail in the
chapter. We demonstrate the viability of silver nanowire based
random network film as a potential replacement. We achieve
remarkable performance in terms of sheet resistance and
transparency which rivals that of ITO, supporting a very strong
case for Ag nanowire film. We combine traditional spray coating
technique with novel Ag nanowires to fabricate high performance
TCE. In chapter 5, we further improve the performance of the TCE
produced by Ag nanowires by using a dry transfer technique
demonstrating a performance comparable to ITO and much better than
other potential candidates that can be used as TCE. ❧ In chapter 6
we addressed an important issue associated with using Ag nanowires
as a future candidate for TCE by proposing a technique to synthesis
thin Ag nanowires which can find application in optoelectronic
device. ❧ Finally in chapter 7, we conclude by discussing the
future directions and work that needs to be done in order to carry
forward the advance made in this thesis.
Advisors/Committee Members: Zhou, Chongwu (Committee Chair), Dapkus, Paul Daniel (Committee Member), Goo, Edward (Committee Member).
Subjects/Keywords: nanowire; semiconductor; metal
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APA (6th Edition):
Madaria, A. R. (2012). Synthesis, characterization and application of metal and
semiconductor nanowires. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6296
Chicago Manual of Style (16th Edition):
Madaria, Anuj Rahul. “Synthesis, characterization and application of metal and
semiconductor nanowires.” 2012. Doctoral Dissertation, University of Southern California. Accessed February 27, 2021.
http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6296.
MLA Handbook (7th Edition):
Madaria, Anuj Rahul. “Synthesis, characterization and application of metal and
semiconductor nanowires.” 2012. Web. 27 Feb 2021.
Vancouver:
Madaria AR. Synthesis, characterization and application of metal and
semiconductor nanowires. [Internet] [Doctoral dissertation]. University of Southern California; 2012. [cited 2021 Feb 27].
Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6296.
Council of Science Editors:
Madaria AR. Synthesis, characterization and application of metal and
semiconductor nanowires. [Doctoral Dissertation]. University of Southern California; 2012. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6296
12.
Hui, Ho Yee.
Understand and advancing of semiconductor nanowire synthesis.
Degree: PhD, Chemical and Biomolecular Engineering, 2017, Georgia Tech
URL: http://hdl.handle.net/1853/58314
► Semiconductor nanowires (NWs) have become an indispensable nanoscale platform for a broad range of electronic, photonic, and energy conversion applications. Among all growth technique, the…
(more)
▼ Semiconductor nanowires (NWs) have become an indispensable nanoscale platform for a broad range of electronic, photonic, and energy conversion applications. Among all growth technique, the bottom-up vapor-liquid-solid (VLS) nanowire (NW) fabrication technique offers the ability to encode material functionalities along the length of a NW in a user programmable manner. A robust control of VLS growth requires understanding of multiple heterogeneous chemical processes: (1) transportation of
semiconductor molecules/atoms from vapor to liquid droplets or vice versa at the vapor-liquid (VL) interface, (2) crystallization and dissolution of
semiconductor atoms at the liquid-solid (LS) interface, and (3) the conformal deposition of precursor molecules onto the nanowire sidewall at the vapor-solid (VS) interface. However, the ability to rationally engineer NWs for advanced
semiconductor devices is critically impaired by limited understanding of these chemical processes at the heterogeneous interfaces. Here, through experiments and modeling, nanowires can be selectively removed via solid-liquid-vapor mechanism at the VL and LS interfaces. Similarly, the importance of adsorbates from a prior study at the VS interface is leveraged to fabricate large-area arrays of high quality axial Si/Ge heterostructures for the first time. These findings open the door to engineer nanowire structures along the nanowire length, a capability that can be applied to applications from high performance electronics to ultra-sensitivities (bio) molecular sensors.
Advisors/Committee Members: Filler, Michael A. (advisor), Reichmanis, Elsa (committee member), Grover, Martha A. (committee member), Xia, Younan (committee member), Bassiri-Gharb, Nazanin (committee member).
Subjects/Keywords: Semiconductor nanowire; Nanomaterial
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CSE |
Export
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Manager
APA (6th Edition):
Hui, H. Y. (2017). Understand and advancing of semiconductor nanowire synthesis. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58314
Chicago Manual of Style (16th Edition):
Hui, Ho Yee. “Understand and advancing of semiconductor nanowire synthesis.” 2017. Doctoral Dissertation, Georgia Tech. Accessed February 27, 2021.
http://hdl.handle.net/1853/58314.
MLA Handbook (7th Edition):
Hui, Ho Yee. “Understand and advancing of semiconductor nanowire synthesis.” 2017. Web. 27 Feb 2021.
Vancouver:
Hui HY. Understand and advancing of semiconductor nanowire synthesis. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/1853/58314.
Council of Science Editors:
Hui HY. Understand and advancing of semiconductor nanowire synthesis. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/58314
Loughborough University
13.
Zhang, Liang.
Effects of magnetic field on electron transport in semiconductor superlattices.
Degree: PhD, 2016, Loughborough University
URL: http://hdl.handle.net/2134/21922
► Quantum superlattice with a narrow energy band is an artificial semiconductor structure demonstrating both nonlinear and active high-frequency electromagnetic properties. These types of superlattices are…
(more)
▼ Quantum superlattice with a narrow energy band is an artificial semiconductor structure demonstrating both nonlinear and active high-frequency electromagnetic properties. These types of superlattices are used as key elements in various miniature electronic devices including frequency multipliers and quantum cascade lasers. Interaction between terahertz radiation and magnetic field in semiconductor superlattices has been the subject of growing research interest, both theoretical and experimental. In this thesis, we study the nonlinear dynamics of electrons in minibands of the semiconductor superlattices subjected to a terahertz electric field and a magnetic field. Electron transport in a semiconductor superlattice with an electric field and a tilted magnetic field has been studied using semiclassical equations. In particular, we consider how dynamics of electron in superlattices evolve with changing the strength and the tilt of a magnetic field. In order to investigate the influence of a tilted magnetic field on electron transport, we calculate the drift velocity for different values of the magnetic field. Studies have shown that the resonance of Bloch oscillations and cyclotron oscillations produces additional peaks in drift velocity. We also found out that appearance of these resonances can promote amplification of a small ac signal applied to the superlattice. In the presence of the electromagnetic field, the superlattice is expected to demonstrate the Hall effect, which however should have a number of very specific features due to an excitation of Bloch oscillations and a significant electric anisotropy. Here, we theoretically study the Hall effect in a semiconductor superlattice both for the steady electron transport and for the transient response. We studied the coherent Hall effect in an extraordinary configuration where the electric field is applied in the transverse direction of the superlattice growth direction. By mapping the momentum dynamics to the pendulum equivalent, we distinguished the two regimes of the oscillations from the viewpoint of the effective potentials. We discuss the experimental manifestation of the Hall effect in a realistic superlattice. We also made the numerical simulations of the polarized THz field and the time-resolved internal electro-optic sampling (TEOS) signals where we found the unusual shaped waveforms of the THz signals.
Subjects/Keywords: 621.3815; Semiconductor superlattices
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APA (6th Edition):
Zhang, L. (2016). Effects of magnetic field on electron transport in semiconductor superlattices. (Doctoral Dissertation). Loughborough University. Retrieved from http://hdl.handle.net/2134/21922
Chicago Manual of Style (16th Edition):
Zhang, Liang. “Effects of magnetic field on electron transport in semiconductor superlattices.” 2016. Doctoral Dissertation, Loughborough University. Accessed February 27, 2021.
http://hdl.handle.net/2134/21922.
MLA Handbook (7th Edition):
Zhang, Liang. “Effects of magnetic field on electron transport in semiconductor superlattices.” 2016. Web. 27 Feb 2021.
Vancouver:
Zhang L. Effects of magnetic field on electron transport in semiconductor superlattices. [Internet] [Doctoral dissertation]. Loughborough University; 2016. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/2134/21922.
Council of Science Editors:
Zhang L. Effects of magnetic field on electron transport in semiconductor superlattices. [Doctoral Dissertation]. Loughborough University; 2016. Available from: http://hdl.handle.net/2134/21922
University of North Texas
14.
Llopis, Antonio.
Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures.
Degree: 2012, University of North Texas
URL: https://digital.library.unt.edu/ark:/67531/metadc115113/
► III-V nitrides have been put to use in a variety of applications including laser diodes for modern DVD devices and for solid-state white lighting. Plasmonics…
(more)
▼ III-V nitrides have been put to use in a variety of applications including laser diodes for modern DVD devices and for solid-state white lighting. Plasmonics has come to the foreground over the past decade as a means for increasing the internal quantum efficiency (IQE) of devices through resonant interaction with surface plasmons which exist at metal/dielectric interfaces. Increases in emission intensity of an order of magnitude have been previously reported using silver thin-films on InGaN/GaN MQWs. the dependence on resonant interaction between the plasmons and the light emitter limits the applications of plasmonics for light emission. This dissertation presents a new non-resonant mechanism based on electrostatic interaction of carriers with induced image charges in a nearby metallic nanoparticle. Enhancement similar in strength to that of plasmonics is observed, without the restrictions imposed upon resonant interactions. in this work we demonstrate several key features of this new interaction, including intensity-dependent saturation, increase in the radiative recombination lifetime, and strongly inhomogeneous light emission. We also present a model for the interaction based on the aforementioned image charge interactions. Also discussed are results of work done in the course of this research resulting in the development of a novel technique for strain measurement in light-emitting structures. This technique makes use of a spectral fitting model to extract information about electron-phonon interactions in the sample which can then be related to strain using theoretical modeling.
Advisors/Committee Members: Neogi, Arup, Krokhin, Arkadii A., Choi, Tae-Youl, Gryczynski, Zygmunt.
Subjects/Keywords: Photonics; photoluminescence; semiconductor
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University of New South Wales
15.
Wang, Qingwen.
Hole Spins in GaAs Quantum Dots.
Degree: Physics, 2016, University of New South Wales
URL: http://handle.unsw.edu.au/1959.4/55452
;
https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37620/SOURCE02?view=true
► In this thesis, we report a new architecture for making lateral hole quantum dots based on shallow accumulation-mode AlGaAs/GaAs heterostructures. Utilizing a double-level-gate architecture, we…
(more)
▼ In this thesis, we report a new architecture for making lateral hole quantum dots based on shallow accumulation-mode AlGaAs/GaAs heterostructures. Utilizing a double-level-gate architecture, we demonstrate the operation of ultra-small single and double quantum dots in the few-hole regime using electrical measurements. Devices with different dimensions and layouts are tested to reach the single-hole limit. With the flexibility of the double-level-gate architecture, both single and double quantum dots can be formed within the same device with good tunability.With the ability to isolate a single heavy-hole spin, we study the Zeeman splitting of the orbital states in different field orientations via magnetospectroscopy measurements. The extracted value of the hole effective g-factor is found to strongly depend on the orbital state, and be highly anisotropic with respect to the magnetic field direction. We show that these peculiar behaviors of the heavy-hole spins can be qualitatively explained by the effects of strong spin-orbit coupling and strong Coulomb interactions in the hole system. By varying the dot size in situ, we also demonstrate the tuning of the g-factor anisotropy, and estimate the shape of electrically-defined quantum dot.With the few-hole double quantum dot, we present the first observation of Pauli spin blockade in GaAs hole quantum dots. Utilizing a vector field magnet system, we study the lifting of spin blockade due to the spin-orbit interaction. We found that the effect of spin-orbit coupling on spin blockade to be highly anisotropic in different magnetic field orientations, which agrees with previous theoretical predictions on systems with strong spin-orbit coupling. From the anisotropic lifting of spin blockade, we identify the orientation of the effective spin-orbit field to be along the transport direction, which is very different from experimental results on electron quantum dots and highlights the uniqueness of hole systems.
Advisors/Committee Members: Hamilton, Alex, Physics, Faculty of Science, UNSW, Klochan, Oleh, Physics, Faculty of Science, UNSW.
Subjects/Keywords: Nanofabrication; Semiconductor; Nanostructure
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APA (6th Edition):
Wang, Q. (2016). Hole Spins in GaAs Quantum Dots. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/55452 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37620/SOURCE02?view=true
Chicago Manual of Style (16th Edition):
Wang, Qingwen. “Hole Spins in GaAs Quantum Dots.” 2016. Doctoral Dissertation, University of New South Wales. Accessed February 27, 2021.
http://handle.unsw.edu.au/1959.4/55452 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37620/SOURCE02?view=true.
MLA Handbook (7th Edition):
Wang, Qingwen. “Hole Spins in GaAs Quantum Dots.” 2016. Web. 27 Feb 2021.
Vancouver:
Wang Q. Hole Spins in GaAs Quantum Dots. [Internet] [Doctoral dissertation]. University of New South Wales; 2016. [cited 2021 Feb 27].
Available from: http://handle.unsw.edu.au/1959.4/55452 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37620/SOURCE02?view=true.
Council of Science Editors:
Wang Q. Hole Spins in GaAs Quantum Dots. [Doctoral Dissertation]. University of New South Wales; 2016. Available from: http://handle.unsw.edu.au/1959.4/55452 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37620/SOURCE02?view=true
University of Cambridge
16.
Allardice, Jesse.
Spectroscopic Study of Triplet Exciton Dynamics at the Hybrid Organic-Inorganic Interface.
Degree: PhD, 2020, University of Cambridge
URL: https://www.repository.cam.ac.uk/handle/1810/314704
► The control and utilisation of spin-triplet excitons in organic semiconductors is highly sought after for the next generation of Optoelectronic applications. Of particular interest is…
(more)
▼ The control and utilisation of spin-triplet excitons in organic semiconductors is highly sought after for the next generation of Optoelectronic applications. Of particular interest is the utilisation of these photoexcited states in the singlet-fission photon-multiplier and triplet-triplet annihilation upconversion processes. Singlet fission is an exciton multiplication process in organic molecules, in which a photogenerated spin-singlet exciton is rapidly and efficiently converted into two spin-triplet excitons. Conversely, triplet-triplet annihilation is essentially the same reaction operating in reverse. These processes offer two spectral management mechanisms to break the Shockley–Queisser limit by overcoming the thermalisation and absorption losses inherent to all single-junction photovoltaics. Such spectral management technologies have been predicted to increase the maximum possible efficiency of Si-based cells from 32 % to greater than 40 %, breaking the Shockley–Queisser limit. Harnessing these processes would be facilitated if the energy of the triplet exciton could be efficiently interchanged with photons. However, utilising triplet excitons like this poses a significant challenge, as transitions between the ground state and triplet excited states typically have negligible mediation by photons. Transitions such as these are spin forbidden, and have a correspondingly weak oscillator strength. In this thesis, we investigate a promising method to overcome this impasse, using inorganic quantum dots (QDs) to efficiently convert between triplet excitons and photons. We develop a variety of novel hybrid organic-inorganic systems that perform singlet-fission photon-multiplication and triplet-triplet annihilation upconversion. We find that in order to achieve efficient triplet transfer at the hybrid organic-inorganic interface, it is critical to engineer the surface of the QD with a triplet transfer ligand. The triplet transfer ligand facilitates transfer by acting as an intermediate excited state during the transfer process, encouraging the formation of an optimal solid-state morphology, and providing a weak adsorption site for rapid transfer to occur at. Among the many highlights, we develop a solid-state singlet-fission photon-multiplier with an exciton multiplication efficiency of ~190%, showing significant promise for real-world application. Additionally, advanced spectroscopic techniques and mathematic modelling are applied to gather an in-depth understanding of the impact of a variety of photophysical processes on operation under realistic working conditions. These results establish a variety of highly tuneable platforms to understand the triplet transfer process at the organic semiconductor and inorganic QD interface, providing clear design rules for new materials that perform spectral management.
Subjects/Keywords: Physics; Spectroscopy; Semiconductor
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APA (6th Edition):
Allardice, J. (2020). Spectroscopic Study of Triplet Exciton Dynamics at the Hybrid Organic-Inorganic Interface. (Doctoral Dissertation). University of Cambridge. Retrieved from https://www.repository.cam.ac.uk/handle/1810/314704
Chicago Manual of Style (16th Edition):
Allardice, Jesse. “Spectroscopic Study of Triplet Exciton Dynamics at the Hybrid Organic-Inorganic Interface.” 2020. Doctoral Dissertation, University of Cambridge. Accessed February 27, 2021.
https://www.repository.cam.ac.uk/handle/1810/314704.
MLA Handbook (7th Edition):
Allardice, Jesse. “Spectroscopic Study of Triplet Exciton Dynamics at the Hybrid Organic-Inorganic Interface.” 2020. Web. 27 Feb 2021.
Vancouver:
Allardice J. Spectroscopic Study of Triplet Exciton Dynamics at the Hybrid Organic-Inorganic Interface. [Internet] [Doctoral dissertation]. University of Cambridge; 2020. [cited 2021 Feb 27].
Available from: https://www.repository.cam.ac.uk/handle/1810/314704.
Council of Science Editors:
Allardice J. Spectroscopic Study of Triplet Exciton Dynamics at the Hybrid Organic-Inorganic Interface. [Doctoral Dissertation]. University of Cambridge; 2020. Available from: https://www.repository.cam.ac.uk/handle/1810/314704
University of Cambridge
17.
Pagnano, Dario.
Trap modelling and injection effects in GaN power devices.
Degree: 2019, University of Cambridge
URL: https://www.repository.cam.ac.uk/handle/1810/310883
► GaN power devices are promising candidates for the next generation of high efficiency power semiconductor devices. Their material and device properties enable power conversion systems…
(more)
▼ GaN power devices are promising candidates for the next generation of high efficiency power semiconductor devices. Their material and device properties enable power conversion systems that are potentially smaller, lighter, less complex, cheaper and more efficient than silicon based solutions. While GaN-based HEMTs are now available on the market, the physics of the device are not yet fully understood and there is still ample margin to improve the electrical characteristics and develop new operating capabilities. The work reported in this thesis is concerned with the characterization, modelling and design of GaN based HEMTs. The research performed is the result of a collaboration with International Rectifier (now Infineon Technologies). While the typical devices under consideration in this thesis have been analysed from diverse perspectives, the main research topics addressed are (i) substrate leakage, (ii) buffer and trap modelling and (iii) hole injection effects. Characterization has been performed on small and large area test structures and transistors by means of static and dynamic measurements. Based on temperature dependent leakage measurements, the essential characteristics of vertical leakage were modelled, leading to the conclusion that the substrate and its interface with the nucleation layer can potentially control its magnitude. Backgating measurement techniques have been employed to characterize buffer traps and an ad hoc TCAD model has been developed to evaluate different modelling approaches. Inconsistencies between existing models were highlighted and a qualitative correlation was found between vertical leakage and trapping. Similar experimental techniques have been used to analyse the effect of hole injection in a GaN HEMT featuring a p GaN-type gate. It was found that the decrease in drain current associated with the substrate coupling effect is virtually suppressed, if sufficient holes are injected from the gate. The voltage and time dependencies of the drain current recovery were also investigated, and it was concluded that, while high voltages should not be a concern, careful optimization of the device toward substrate coupling immunity may be needed to operate simultaneously at high voltages and high frequencies. Finally, novel device structures and technical solutions have been proposed to improve the characteristics of GaN based HEMTs.
Subjects/Keywords: Power semiconductor devices
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APA (6th Edition):
Pagnano, D. (2019). Trap modelling and injection effects in GaN power devices. (Doctoral Dissertation). University of Cambridge. Retrieved from https://www.repository.cam.ac.uk/handle/1810/310883
Chicago Manual of Style (16th Edition):
Pagnano, Dario. “Trap modelling and injection effects in GaN power devices.” 2019. Doctoral Dissertation, University of Cambridge. Accessed February 27, 2021.
https://www.repository.cam.ac.uk/handle/1810/310883.
MLA Handbook (7th Edition):
Pagnano, Dario. “Trap modelling and injection effects in GaN power devices.” 2019. Web. 27 Feb 2021.
Vancouver:
Pagnano D. Trap modelling and injection effects in GaN power devices. [Internet] [Doctoral dissertation]. University of Cambridge; 2019. [cited 2021 Feb 27].
Available from: https://www.repository.cam.ac.uk/handle/1810/310883.
Council of Science Editors:
Pagnano D. Trap modelling and injection effects in GaN power devices. [Doctoral Dissertation]. University of Cambridge; 2019. Available from: https://www.repository.cam.ac.uk/handle/1810/310883
University of Cambridge
18.
Allardice, Jesse.
Spectroscopic study of triplet exciton dynamics at the hybrid organic-inorganic interface.
Degree: PhD, 2020, University of Cambridge
URL: https://doi.org/10.17863/CAM.61811
;
https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.821584
► The control and utilisation of spin-triplet excitons in organic semiconductors is highly sought after for the next generation of Optoelectronic applications. Of particular interest is…
(more)
▼ The control and utilisation of spin-triplet excitons in organic semiconductors is highly sought after for the next generation of Optoelectronic applications. Of particular interest is the utilisation of these photoexcited states in the singlet-fission photon-multiplier and triplet-triplet annihilation upconversion processes. Singlet fission is an exciton multiplication process in organic molecules, in which a photogenerated spin-singlet exciton is rapidly and efficiently converted into two spin-triplet excitons. Conversely, triplet-triplet annihilation is essentially the same reaction operating in reverse. These processes offer two spectral management mechanisms to break the Shockley–Queisser limit by overcoming the thermalisation and absorption losses inherent to all single-junction photovoltaics. Such spectral management technologies have been predicted to increase the maximum possible efficiency of Si-based cells from 32 % to greater than 40 %, breaking the Shockley–Queisser limit. Harnessing these processes would be facilitated if the energy of the triplet exciton could be efficiently interchanged with photons. However, utilising triplet excitons like this poses a significant challenge, as transitions between the ground state and triplet excited states typically have negligible mediation by photons. Transitions such as these are spin forbidden, and have a correspondingly weak oscillator strength. In this thesis, we investigate a promising method to overcome this impasse, using inorganic quantum dots (QDs) to efficiently convert between triplet excitons and photons. We develop a variety of novel hybrid organic-inorganic systems that perform singlet-fission photon-multiplication and triplet-triplet annihilation upconversion. We find that in order to achieve efficient triplet transfer at the hybrid organic-inorganic interface, it is critical to engineer the surface of the QD with a triplet transfer ligand. The triplet transfer ligand facilitates transfer by acting as an intermediate excited state during the transfer process, encouraging the formation of an optimal solid-state morphology, and providing a weak adsorption site for rapid transfer to occur at. Among the many highlights, we develop a solid-state singlet-fission photon-multiplier with an exciton multiplication efficiency of ~190%, showing significant promise for real-world application. Additionally, advanced spectroscopic techniques and mathematic modelling are applied to gather an in-depth understanding of the impact of a variety of photophysical processes on operation under realistic working conditions. These results establish a variety of highly tuneable platforms to understand the triplet transfer process at the organic semiconductor and inorganic QD interface, providing clear design rules for new materials that perform spectral management.
Subjects/Keywords: Physics; Spectroscopy; Semiconductor
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APA (6th Edition):
Allardice, J. (2020). Spectroscopic study of triplet exciton dynamics at the hybrid organic-inorganic interface. (Doctoral Dissertation). University of Cambridge. Retrieved from https://doi.org/10.17863/CAM.61811 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.821584
Chicago Manual of Style (16th Edition):
Allardice, Jesse. “Spectroscopic study of triplet exciton dynamics at the hybrid organic-inorganic interface.” 2020. Doctoral Dissertation, University of Cambridge. Accessed February 27, 2021.
https://doi.org/10.17863/CAM.61811 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.821584.
MLA Handbook (7th Edition):
Allardice, Jesse. “Spectroscopic study of triplet exciton dynamics at the hybrid organic-inorganic interface.” 2020. Web. 27 Feb 2021.
Vancouver:
Allardice J. Spectroscopic study of triplet exciton dynamics at the hybrid organic-inorganic interface. [Internet] [Doctoral dissertation]. University of Cambridge; 2020. [cited 2021 Feb 27].
Available from: https://doi.org/10.17863/CAM.61811 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.821584.
Council of Science Editors:
Allardice J. Spectroscopic study of triplet exciton dynamics at the hybrid organic-inorganic interface. [Doctoral Dissertation]. University of Cambridge; 2020. Available from: https://doi.org/10.17863/CAM.61811 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.821584
NSYSU
19.
Yeh, Shu-hung.
Semiconductor Assembly Manufacturing Industry Control of Volatile Organic Compounds by Wet Scrubbing and Advanced Oxidation Technology – Case Feasibility Studies of Full-Scale Plant – .
Degree: Master, Marine Environment and Engineering, 2010, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0208110-101852
► Taiwan semiconductor manufacturing industry ranks top in the world for the production and has a great contribution to Taiwan economics. However, the industry produces a…
(more)
▼ Taiwan
semiconductor manufacturing industry ranks top in the world for the production and has a great contribution to Taiwan economics. However, the industry produces a significant amount of volatile organic compounds (VOC) into the air. According to EPA of Taiwan, the annual VOC emission amounts from the industry were approximately five thousand tons, a major stationary source of VOC emission. The EPA has implemented the air pollution control regulation for
semiconductor industry, in which the VOC emission amount should be below <0.6 kg/hr or the removal efficiency should be >90% for each factory . The conventional control technologies for the VOC emissions was concentration using zeolite followed by thermal oxidation. However, the high boiling points of VOC is difficult to desorbed from zeolite and it required the water to wash the zeolite. This would reduce the removal efficiency of zeolite. This control processes have high operation cost and may produce byproducts required for further treatment.
Advanced chemical oxidation process (AOP) recently has gained tremendous attention as an emerging control technology of VOC due to low treatment cost and few oxidation byproducts. The major oxidant of the technology is believed to be hydroxyl radicals, which can react organic compounds at very reaction rates. A majority of VOC emissions from the
semiconductor industry are highly soluble and can be easily dissolved into water by scrubbing process. However, the wet scrubbing process can produce a significant amount of wastewater.
The objective of this study was to investigate the feasibility of using wet scrubber and O3/H2O2/catalyst process on controlling the VOC emissions from the
semiconductor manufacturing industry. A full scale of process of 1000 CMM flowrate was designed and built along with a
semiconductor packaging facility. Results showed that major compounds of the VOC exhaust were iso-propanol, PGMEA, PGME and methyl ethyl keton. The inlet concentrations of THC significantly varied from 50 to 600 ppmv as methane. The AOP process can removed 90-95% of VOCs and the scrubbing water can be recycled and reused at least 95%. The capital cost of the system was NT20,000,000 with the annual operation cost of NT120,000 which was only 36-40% of it for the concentration using zeolite followed by thermal oxidation.
Advisors/Committee Members: John, Chitsan Lin (chair), Jie-Chung Lou (chair), lei Yang (committee member).
Subjects/Keywords: Semiconductor Assembly Manufacturing Industry
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APA (6th Edition):
Yeh, S. (2010). Semiconductor Assembly Manufacturing Industry Control of Volatile Organic Compounds by Wet Scrubbing and Advanced Oxidation Technology – Case Feasibility Studies of Full-Scale Plant – . (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0208110-101852
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Yeh, Shu-hung. “Semiconductor Assembly Manufacturing Industry Control of Volatile Organic Compounds by Wet Scrubbing and Advanced Oxidation Technology – Case Feasibility Studies of Full-Scale Plant – .” 2010. Thesis, NSYSU. Accessed February 27, 2021.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0208110-101852.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Yeh, Shu-hung. “Semiconductor Assembly Manufacturing Industry Control of Volatile Organic Compounds by Wet Scrubbing and Advanced Oxidation Technology – Case Feasibility Studies of Full-Scale Plant – .” 2010. Web. 27 Feb 2021.
Vancouver:
Yeh S. Semiconductor Assembly Manufacturing Industry Control of Volatile Organic Compounds by Wet Scrubbing and Advanced Oxidation Technology – Case Feasibility Studies of Full-Scale Plant – . [Internet] [Thesis]. NSYSU; 2010. [cited 2021 Feb 27].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0208110-101852.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Yeh S. Semiconductor Assembly Manufacturing Industry Control of Volatile Organic Compounds by Wet Scrubbing and Advanced Oxidation Technology – Case Feasibility Studies of Full-Scale Plant – . [Thesis]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0208110-101852
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
University of Pretoria
20.
[No author].
Modelling the photocatalytic degradation kinetics of
organochloride chemicals in aqueous solutions
.
Degree: 2012, University of Pretoria
URL: http://upetd.up.ac.za/thesis/available/etd-06262012-155128/
► Polychlorinated endocrine disrupting chemicals are environmental pollutants that are increasingly found in water sources. As a result of their hydrophobic properties, they generally accumulate in…
(more)
▼ Polychlorinated endocrine disrupting chemicals are
environmental pollutants that are increasingly found in water
sources. As a result of their hydrophobic properties, they
generally accumulate in adipocytes of humans and wildlife when
ingested. In this study, the feasibility of the advanced oxidation
processes (AOPs) such as heterogeneous photocatalysis technology is
investigated for the treatment of organochlorides in water systems.
Titanium dioxide (TiO2) is the
semiconductor catalyst of interest.
The literature suggests that the most prominent organochlorides in
the region are organochloride pesticides (OCPs). A group of 5
compounds were identified for the investigation; DDT, DDE,
heptachlor, chlordane, and a polychlorinated biphenyl compound
named 2,3,4-trichlorobiphenyl. Reverse phase solid phase extracted
(RP-SPE) surface water organic analytes analysis was conducted
using gas chromatography mass spectroscopy (GC-MS). Results from
most sampling sites showed high concentration levels of the
organochlorides in the environment. Heterogeneous photocatalysed
mineralisation processes of organochlorides in aqueous systems were
conducted in a batch reactor. Organochloride spiked solutions of
differing catalyst concentrations are irradiated using a UV lamp
for a period of 30 minutes. The reaction kinetics are determined
and weighed against conventional photolysis. Results showed
improved photo degradation of organochlorides under photocatalytic
imposed conditions in comparison to photolysis. Results also
suggest that photocatalytic degradation of organochlorides is less
favoured with increased TiO2 catalyst concentrations. Enhanced
catalyst performance studies through TiO2 surface property
modification were conducted using copper nitrate (CuNO3) as a
catalyst dopant. The doped catalyst showed slightly improved
degradation of organochlorides at particular catalyst
concentrations. Simulated photocatalytic rate of reaction kinetics
results are in correlation with the modeled experimental results.
They show variability of the degradation constant in the rate of
reaction with varied catalyst concentrations. Catalyst
concentration efficiency of each compound and the rate of the
reactions were determined.
Advisors/Committee Members: Chirwa, Evans M.N (advisor).
Subjects/Keywords: Photocatalysis;
Semiconductor;
Organochloride;
UCTD
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APA (6th Edition):
author], [. (2012). Modelling the photocatalytic degradation kinetics of
organochloride chemicals in aqueous solutions
. (Masters Thesis). University of Pretoria. Retrieved from http://upetd.up.ac.za/thesis/available/etd-06262012-155128/
Chicago Manual of Style (16th Edition):
author], [No. “Modelling the photocatalytic degradation kinetics of
organochloride chemicals in aqueous solutions
.” 2012. Masters Thesis, University of Pretoria. Accessed February 27, 2021.
http://upetd.up.ac.za/thesis/available/etd-06262012-155128/.
MLA Handbook (7th Edition):
author], [No. “Modelling the photocatalytic degradation kinetics of
organochloride chemicals in aqueous solutions
.” 2012. Web. 27 Feb 2021.
Vancouver:
author] [. Modelling the photocatalytic degradation kinetics of
organochloride chemicals in aqueous solutions
. [Internet] [Masters thesis]. University of Pretoria; 2012. [cited 2021 Feb 27].
Available from: http://upetd.up.ac.za/thesis/available/etd-06262012-155128/.
Council of Science Editors:
author] [. Modelling the photocatalytic degradation kinetics of
organochloride chemicals in aqueous solutions
. [Masters Thesis]. University of Pretoria; 2012. Available from: http://upetd.up.ac.za/thesis/available/etd-06262012-155128/
21.
Yu, Nu.
Coupling of a semiconductor laser to a single-mode fiber.
Degree: MS, 1987, Oregon Health Sciences University
URL: doi:10.6083/M40Z7167
;
http://digitalcommons.ohsu.edu/etd/232
Subjects/Keywords: Semiconductor lasers
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APA (6th Edition):
Yu, N. (1987). Coupling of a semiconductor laser to a single-mode fiber. (Thesis). Oregon Health Sciences University. Retrieved from doi:10.6083/M40Z7167 ; http://digitalcommons.ohsu.edu/etd/232
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Yu, Nu. “Coupling of a semiconductor laser to a single-mode fiber.” 1987. Thesis, Oregon Health Sciences University. Accessed February 27, 2021.
doi:10.6083/M40Z7167 ; http://digitalcommons.ohsu.edu/etd/232.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Yu, Nu. “Coupling of a semiconductor laser to a single-mode fiber.” 1987. Web. 27 Feb 2021.
Vancouver:
Yu N. Coupling of a semiconductor laser to a single-mode fiber. [Internet] [Thesis]. Oregon Health Sciences University; 1987. [cited 2021 Feb 27].
Available from: doi:10.6083/M40Z7167 ; http://digitalcommons.ohsu.edu/etd/232.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Yu N. Coupling of a semiconductor laser to a single-mode fiber. [Thesis]. Oregon Health Sciences University; 1987. Available from: doi:10.6083/M40Z7167 ; http://digitalcommons.ohsu.edu/etd/232
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
22.
Apte, Vibhavari.
Measurement and computer simulation of the farfield patterns for turning-mirror surface-emitting diode lasers.
Degree: MS, 1988, Oregon Health Sciences University
URL: doi:10.6083/M47942NZ
;
http://digitalcommons.ohsu.edu/etd/269
Subjects/Keywords: Semiconductor lasers
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APA (6th Edition):
Apte, V. (1988). Measurement and computer simulation of the farfield patterns for turning-mirror surface-emitting diode lasers. (Thesis). Oregon Health Sciences University. Retrieved from doi:10.6083/M47942NZ ; http://digitalcommons.ohsu.edu/etd/269
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Apte, Vibhavari. “Measurement and computer simulation of the farfield patterns for turning-mirror surface-emitting diode lasers.” 1988. Thesis, Oregon Health Sciences University. Accessed February 27, 2021.
doi:10.6083/M47942NZ ; http://digitalcommons.ohsu.edu/etd/269.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Apte, Vibhavari. “Measurement and computer simulation of the farfield patterns for turning-mirror surface-emitting diode lasers.” 1988. Web. 27 Feb 2021.
Vancouver:
Apte V. Measurement and computer simulation of the farfield patterns for turning-mirror surface-emitting diode lasers. [Internet] [Thesis]. Oregon Health Sciences University; 1988. [cited 2021 Feb 27].
Available from: doi:10.6083/M47942NZ ; http://digitalcommons.ohsu.edu/etd/269.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Apte V. Measurement and computer simulation of the farfield patterns for turning-mirror surface-emitting diode lasers. [Thesis]. Oregon Health Sciences University; 1988. Available from: doi:10.6083/M47942NZ ; http://digitalcommons.ohsu.edu/etd/269
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Dalhousie University
23.
Mao, Xiaoou.
Optical Surface Plasmons in Semiconductors.
Degree: Master of Applied Science, Department of Electrical & Computer
Engineering, 2012, Dalhousie University
URL: http://hdl.handle.net/10222/15451
► Thesis
A theoretical treatment is presented of a plasmonic interaction at an interface between a semiconductor and a dielectric, as opposed to the more traditional…
(more)
▼ Thesis
A theoretical treatment is presented of a plasmonic
interaction at an interface between a semiconductor and a
dielectric, as opposed to the more traditional configuration
whereby a metal/dielectric interface is investigated. Our work is
to show that structures using semiconductors instead of metal to
excite surface plasmon can support not only terahertz frequencies
plasmons but also optical frequency (around 10 to power of 15 Hz)
plasmons.
Advisors/Committee Members: N/A (external-examiner), Dr.Michael Cada (graduate-coordinator), Dr.Zhizhang Chen (thesis-reader), Dr.Guy Kember (thesis-reader), Dr.Michael Cada (thesis-supervisor), Not Applicable (ethics-approval), Not Applicable (manuscripts), Not Applicable (copyright-release).
Subjects/Keywords: Surface Plasmons; Semiconductor; Optical Frequency
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APA (6th Edition):
Mao, X. (2012). Optical Surface Plasmons in Semiconductors. (Masters Thesis). Dalhousie University. Retrieved from http://hdl.handle.net/10222/15451
Chicago Manual of Style (16th Edition):
Mao, Xiaoou. “Optical Surface Plasmons in Semiconductors.” 2012. Masters Thesis, Dalhousie University. Accessed February 27, 2021.
http://hdl.handle.net/10222/15451.
MLA Handbook (7th Edition):
Mao, Xiaoou. “Optical Surface Plasmons in Semiconductors.” 2012. Web. 27 Feb 2021.
Vancouver:
Mao X. Optical Surface Plasmons in Semiconductors. [Internet] [Masters thesis]. Dalhousie University; 2012. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/10222/15451.
Council of Science Editors:
Mao X. Optical Surface Plasmons in Semiconductors. [Masters Thesis]. Dalhousie University; 2012. Available from: http://hdl.handle.net/10222/15451
Dalhousie University
24.
Alattar, Yousef.
A Study of SAM Modified ZnO in Hybrid Bilayer ZnO/P3HT
Photovoltaic Devices.
Degree: Master of Applied Science, Department of Electrical & Computer
Engineering, 2013, Dalhousie University
URL: http://hdl.handle.net/10222/35440
► Hybrid organic/inorganic solar cells such as ZnO/P3HT offer promise in increasing efficiency of organic-based devices. However there are many unresolved issues such as poor short-circuit…
(more)
▼ Hybrid organic/inorganic solar cells such as ZnO/P3HT
offer promise in increasing efficiency of organic-based devices.
However there are many unresolved issues such as poor short-circuit
current and open-circuit voltage that are hampering their
widespread, commercial use. It is thought that surface trap states
on ZnO are providing an open avenue for carrier recombination thus
creating devices with poor current transport characteristics. Using
self assembled monolayers (SAMs) may provide some key answers and
solutions to this problem by passivating trap states. In the course
of this work, benzoic acid, 4-aminobenzoic acid, 4-methoxybenzoic
acid, phenylphosphonic acid, and 4-methoxyphenylphosphonic acid
SAMs were studied in large part due to their commercial
availability. It was found that the phenylphosphonic acids had a
clear impact on decreasing dark current; therefore strongly
suggesting that exciton recombination has been inhibited to some
degree. These molecules also caused a decrease in efficiency by an
order of magnitude as compared to a plain ZnO/P3HT bilayer cell
(standard). There were pronounced negative effects on the other
device parameters such as open circuit voltage and short circuit
current. In the case of 4-methoxybenzoic acid and benzoic acid the
effects are not so clear in that parts of the dark J-V curve
indicate a decrease in dark current while other regions show an
increase. Interestingly for the negative effect on efficiency and
other device parameters was not as pronounced as the
phenylphosphonic acids. In both cases it is hypothesized that
because of their wide band gaps and poor energy level matching,
they ultimately impact device performance negatively. In the
future, use of simulations to determine optimal SAM molecular
structures that can be synthesized in the lab or purchased
commercially is suggested.
Advisors/Committee Members: n/a (external-examiner), Dr. Jacek Ilow (graduate-coordinator), Dr. Kamal El-Sankary, Dr. Jeff Dahn (thesis-reader), Dr. Ian Hill, Dr. Peter Gregson (thesis-supervisor), Not Applicable (ethics-approval), Not Applicable (manuscripts), Not Applicable (copyright-release).
Subjects/Keywords: Photovoltaics; Organic; Semiconductor; Hybrid;
SAM
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APA ·
Chicago ·
MLA ·
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Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Alattar, Y. (2013). A Study of SAM Modified ZnO in Hybrid Bilayer ZnO/P3HT
Photovoltaic Devices. (Masters Thesis). Dalhousie University. Retrieved from http://hdl.handle.net/10222/35440
Chicago Manual of Style (16th Edition):
Alattar, Yousef. “A Study of SAM Modified ZnO in Hybrid Bilayer ZnO/P3HT
Photovoltaic Devices.” 2013. Masters Thesis, Dalhousie University. Accessed February 27, 2021.
http://hdl.handle.net/10222/35440.
MLA Handbook (7th Edition):
Alattar, Yousef. “A Study of SAM Modified ZnO in Hybrid Bilayer ZnO/P3HT
Photovoltaic Devices.” 2013. Web. 27 Feb 2021.
Vancouver:
Alattar Y. A Study of SAM Modified ZnO in Hybrid Bilayer ZnO/P3HT
Photovoltaic Devices. [Internet] [Masters thesis]. Dalhousie University; 2013. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/10222/35440.
Council of Science Editors:
Alattar Y. A Study of SAM Modified ZnO in Hybrid Bilayer ZnO/P3HT
Photovoltaic Devices. [Masters Thesis]. Dalhousie University; 2013. Available from: http://hdl.handle.net/10222/35440
Rochester Institute of Technology
25.
Puchades, Ivan.
A Thermally actuated microelectromechanical (MEMS) device for measuring viscosity.
Degree: PhD, Microsystems Engineering, 2011, Rochester Institute of Technology
URL: https://scholarworks.rit.edu/theses/2
► A thermally actuated non-cantilever-beam micro-electro-mechanical viscosity sensor is presented. The proposed device is based on thermally induced vibrations of a silicon-based membrane and its damping…
(more)
▼ A thermally actuated non-cantilever-beam micro-electro-mechanical viscosity sensor is presented. The proposed device is based on thermally induced vibrations of a silicon-based membrane and its damping due to the surrounding fluid. This vibration viscometer device utilizes thermal actuation through an in-situ resistive heater and piezoresistive sensing, both of which utilize CMOS compatible materials leading to an inexpensive and reliable system. Due to the nature of the actuation, thermal analysis was performed utilizing PN diodes embedded in the silicon membrane to monitor its temperature. This analysis determined the minimum heater voltage pulse amplitude and time in order to prevent heat loss to the oil under test that would lead to local viscosity changes. In order to study the natural vibration behavior of the complex multilayer membrane that is needed for the proposed sensor, a designed experiment was carried out. In this experiment, the effects of the material composition of the membrane and the size of the actuation heater were studied in detail with respect to their effects on the natural frequency of vibration. To confirm the validity of these measurements, Finite Element Analysis and white-light interferometry were utilized. Further characterization of the natural frequency of vibration of the membranes was carried out at elevated temperatures to explore the effects of temperature. Complex interactions take place among the different layers that compose the membrane structures. Finally, viscosity measurements were performed and compared to standard calibrated oils as well as to motor oils measured on a commercial cone-and-plate viscometer. The experimentally obtained data is compared to theoretical predictions and an empirically-derived model to predict viscosity from vibration measurements is proposed. Frequency correlation to viscosity was shown to be the best indicator for the range of viscosities tested with lower error (+/- 5%), than that of quality factor (+/- 20%). Further viscosity measurements were taken at elevated temperatures and over long periods of time to explore the device reliability and drift. Finally, further size reduction of the device was explored.
Advisors/Committee Members: Fuller, Lynn.
Subjects/Keywords: Fluids; MEMS; Semiconductor; Viscosity
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APA (6th Edition):
Puchades, I. (2011). A Thermally actuated microelectromechanical (MEMS) device for measuring viscosity. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/2
Chicago Manual of Style (16th Edition):
Puchades, Ivan. “A Thermally actuated microelectromechanical (MEMS) device for measuring viscosity.” 2011. Doctoral Dissertation, Rochester Institute of Technology. Accessed February 27, 2021.
https://scholarworks.rit.edu/theses/2.
MLA Handbook (7th Edition):
Puchades, Ivan. “A Thermally actuated microelectromechanical (MEMS) device for measuring viscosity.” 2011. Web. 27 Feb 2021.
Vancouver:
Puchades I. A Thermally actuated microelectromechanical (MEMS) device for measuring viscosity. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2011. [cited 2021 Feb 27].
Available from: https://scholarworks.rit.edu/theses/2.
Council of Science Editors:
Puchades I. A Thermally actuated microelectromechanical (MEMS) device for measuring viscosity. [Doctoral Dissertation]. Rochester Institute of Technology; 2011. Available from: https://scholarworks.rit.edu/theses/2
University of Pretoria
26.
Khuzwayo, Zakhele Siyanda
Prince.
Modelling the
photocatalytic degradation kinetics of organochloride chemicals in
aqueous solutions.
Degree: Chemical Engineering, 2012, University of Pretoria
URL: http://hdl.handle.net/2263/25881
► Polychlorinated endocrine disrupting chemicals are environmental pollutants that are increasingly found in water sources. As a result of their hydrophobic properties, they generally accumulate in…
(more)
▼ Polychlorinated endocrine disrupting chemicals are
environmental pollutants that are increasingly found in water
sources. As a result of their hydrophobic properties, they
generally accumulate in adipocytes of humans and wildlife when
ingested. In this study, the feasibility of the advanced oxidation
processes (AOPs) such as heterogeneous photocatalysis technology is
investigated for the treatment of organochlorides in water systems.
Titanium dioxide (TiO2) is the
semiconductor catalyst of interest.
The literature suggests that the most prominent organochlorides in
the region are organochloride pesticides (OCPs). A group of 5
compounds were identified for the investigation; DDT, DDE,
heptachlor, chlordane, and a polychlorinated biphenyl compound
named 2,3,4-trichlorobiphenyl. Reverse phase solid phase extracted
(RP-SPE) surface water organic analytes analysis was conducted
using gas chromatography mass spectroscopy (GC-MS). Results from
most sampling sites showed high concentration levels of the
organochlorides in the environment. Heterogeneous photocatalysed
mineralisation processes of organochlorides in aqueous systems were
conducted in a batch reactor. Organochloride spiked solutions of
differing catalyst concentrations are irradiated using a UV lamp
for a period of 30 minutes. The reaction kinetics are determined
and weighed against conventional photolysis. Results showed
improved photo degradation of organochlorides under photocatalytic
imposed conditions in comparison to photolysis. Results also
suggest that photocatalytic degradation of organochlorides is less
favoured with increased TiO2 catalyst concentrations. Enhanced
catalyst performance studies through TiO2 surface property
modification were conducted using copper nitrate (CuNO3) as a
catalyst dopant. The doped catalyst showed slightly improved
degradation of organochlorides at particular catalyst
concentrations. Simulated photocatalytic rate of reaction kinetics
results are in correlation with the modeled experimental results.
They show variability of the degradation constant in the rate of
reaction with varied catalyst concentrations. Catalyst
concentration efficiency of each compound and the rate of the
reactions were determined.
Advisors/Committee Members: Chirwa, Evans M.N. (advisor).
Subjects/Keywords: Photocatalysis;
Semiconductor;
Organochloride;
UCTD
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APA ·
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MLA ·
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CSE |
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Manager
APA (6th Edition):
Khuzwayo, Z. S. (2012). Modelling the
photocatalytic degradation kinetics of organochloride chemicals in
aqueous solutions. (Masters Thesis). University of Pretoria. Retrieved from http://hdl.handle.net/2263/25881
Chicago Manual of Style (16th Edition):
Khuzwayo, Zakhele Siyanda. “Modelling the
photocatalytic degradation kinetics of organochloride chemicals in
aqueous solutions.” 2012. Masters Thesis, University of Pretoria. Accessed February 27, 2021.
http://hdl.handle.net/2263/25881.
MLA Handbook (7th Edition):
Khuzwayo, Zakhele Siyanda. “Modelling the
photocatalytic degradation kinetics of organochloride chemicals in
aqueous solutions.” 2012. Web. 27 Feb 2021.
Vancouver:
Khuzwayo ZS. Modelling the
photocatalytic degradation kinetics of organochloride chemicals in
aqueous solutions. [Internet] [Masters thesis]. University of Pretoria; 2012. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/2263/25881.
Council of Science Editors:
Khuzwayo ZS. Modelling the
photocatalytic degradation kinetics of organochloride chemicals in
aqueous solutions. [Masters Thesis]. University of Pretoria; 2012. Available from: http://hdl.handle.net/2263/25881
University of Ottawa
27.
Ben Taher, Azza.
Strong Optical Field Ionization of Solids
.
Degree: 2018, University of Ottawa
URL: http://hdl.handle.net/10393/37151
► Population transfer from the valence to conduction band in the presence of an intense laser field is explored theoretically in semiconductors and dielectrics. Experiments on…
(more)
▼ Population transfer from the valence to conduction band in the presence of
an intense laser field is explored theoretically in semiconductors and dielectrics.
Experiments on intense laser driven dielectrics have revealed population transfer
to the conduction band that differs from that seen in semiconductors. Our
research explores two aspects of ionization in solids. (i) Current ionization
theories neglect coupling between valence and conduction band and therewith
the dynamic Stark shift. Our single-particle analysis identifies this as a potential
reason for the different ionization behaviour. The dynamic Stark shift increases
the bandgap with increasing laser intensities thus suppressing ionization to an
extent where virtual population oscillation become dominant. The dynamic
Stark shift plays a role dominantly in dielectrics which due to the large bandgap
can be exposed to significantly higher laser intensities. (ii) In the presence
of laser dressed virtual population of the conduction band, elastic collisions
potentially transmute virtual into real population resulting in ionization. This
process is explored in context of relaxation time approximation.
Subjects/Keywords: Semiconductor;
Dielectric;
Stark Shift;
Dephasing
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APA (6th Edition):
Ben Taher, A. (2018). Strong Optical Field Ionization of Solids
. (Thesis). University of Ottawa. Retrieved from http://hdl.handle.net/10393/37151
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Ben Taher, Azza. “Strong Optical Field Ionization of Solids
.” 2018. Thesis, University of Ottawa. Accessed February 27, 2021.
http://hdl.handle.net/10393/37151.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Ben Taher, Azza. “Strong Optical Field Ionization of Solids
.” 2018. Web. 27 Feb 2021.
Vancouver:
Ben Taher A. Strong Optical Field Ionization of Solids
. [Internet] [Thesis]. University of Ottawa; 2018. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/10393/37151.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Ben Taher A. Strong Optical Field Ionization of Solids
. [Thesis]. University of Ottawa; 2018. Available from: http://hdl.handle.net/10393/37151
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Oregon State University
28.
Rao, Mulpuri Venkata.
Properties of semi-insulating In₀. ₅₃Ga₀. ₄₇As epitaxial layers and photoconductive detectors.
Degree: PhD, Electrical and Computer Engineering, 1985, Oregon State University
URL: http://hdl.handle.net/1957/40361
Subjects/Keywords: Semiconductor doping
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APA (6th Edition):
Rao, M. V. (1985). Properties of semi-insulating In₀. ₅₃Ga₀. ₄₇As epitaxial layers and photoconductive detectors. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/40361
Chicago Manual of Style (16th Edition):
Rao, Mulpuri Venkata. “Properties of semi-insulating In₀. ₅₃Ga₀. ₄₇As epitaxial layers and photoconductive detectors.” 1985. Doctoral Dissertation, Oregon State University. Accessed February 27, 2021.
http://hdl.handle.net/1957/40361.
MLA Handbook (7th Edition):
Rao, Mulpuri Venkata. “Properties of semi-insulating In₀. ₅₃Ga₀. ₄₇As epitaxial layers and photoconductive detectors.” 1985. Web. 27 Feb 2021.
Vancouver:
Rao MV. Properties of semi-insulating In₀. ₅₃Ga₀. ₄₇As epitaxial layers and photoconductive detectors. [Internet] [Doctoral dissertation]. Oregon State University; 1985. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/1957/40361.
Council of Science Editors:
Rao MV. Properties of semi-insulating In₀. ₅₃Ga₀. ₄₇As epitaxial layers and photoconductive detectors. [Doctoral Dissertation]. Oregon State University; 1985. Available from: http://hdl.handle.net/1957/40361
Oregon State University
29.
Rinaldi, David William.
Radiation Detection Using a Semiconducting Nanocrystal Detector.
Degree: MS, Nuclear Engineering, 2016, Oregon State University
URL: http://hdl.handle.net/1957/59217
► Nanostructured material has been projected to be the next generation material for the detection of ionizing radiation due to the uniquely superior physical processes associated…
(more)
▼ Nanostructured material has been projected to be the next generation material for
the detection of ionizing radiation due to the uniquely superior physical processes associated with charge creation and by virtue of their optoelectronic tunablility. Semiconducting Nanocrystal (NC) detectors, by nature of their low band gap material, low fabrication
costs, high densities, and direct radiation-to-charge formation (unlike scintillators) are
poised to capture the best resolution of all NC radiation detectors. If adequately developed, semiconducting NC detectors could have a substantial impact in all areas where
radiation spectroscopy is needed. Proof of concept detectors were shown to achieve resolution comparable to that of High Purity Germanium (HPGe) while operating at room
temperature. However, all deposition processes performed (drop casting, spin casting, dip
casting) even with various treatments (layer-by-layer treatment, ligand exchange, addition
of a conductive polymer) have resulted in a material with structural defects and inhomogeneities which in turn create poor conditions for the mitigation of charge carriers, and
ultimately thicknesses for the active detection medium have not surpassed the millimeter
scale. In this thesis, a variety of Lead Selenide (PbSe) NC based radiation detectors were
fabricated using a chemical synthesis and drop-cast deposition method, however, none
were able to show sensitivity to radiation due to a low signal to noise ratio.
Advisors/Committee Members: Yang, Haori (advisor), Palmer, Camille (committee member).
Subjects/Keywords: Nanocrystal; Semiconductor nuclear counters
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APA (6th Edition):
Rinaldi, D. W. (2016). Radiation Detection Using a Semiconducting Nanocrystal Detector. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/59217
Chicago Manual of Style (16th Edition):
Rinaldi, David William. “Radiation Detection Using a Semiconducting Nanocrystal Detector.” 2016. Masters Thesis, Oregon State University. Accessed February 27, 2021.
http://hdl.handle.net/1957/59217.
MLA Handbook (7th Edition):
Rinaldi, David William. “Radiation Detection Using a Semiconducting Nanocrystal Detector.” 2016. Web. 27 Feb 2021.
Vancouver:
Rinaldi DW. Radiation Detection Using a Semiconducting Nanocrystal Detector. [Internet] [Masters thesis]. Oregon State University; 2016. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/1957/59217.
Council of Science Editors:
Rinaldi DW. Radiation Detection Using a Semiconducting Nanocrystal Detector. [Masters Thesis]. Oregon State University; 2016. Available from: http://hdl.handle.net/1957/59217
Oregon State University
30.
Ebner, John.
Growth, fabrication and modeling of pseudomorphic laser diodes.
Degree: PhD, Electrical and Computer Engineering, 1989, Oregon State University
URL: http://hdl.handle.net/1957/38315
► This thesis reports on the crystal growth, fabrication, modeling and performance of Graded Index-Separate Confinement Heterostructure laser diodes which contain pseudomorphic InGaAs as the active…
(more)
▼ This thesis reports on the crystal growth, fabrication,
modeling and performance of Graded Index-Separate Confinement
Heterostructure laser diodes which contain pseudomorphic InGaAs as the
active region material. Laser epitaxial layers were grown with
different indium mole-fractions, and a constant InGaAs layer thickness
of 10 nm, on both sides of the theoretical Matthews-Blakeslee limit
for dislocation formation. Devices fabricated from these epitaxial
layers demonstrated room temperature lasing for the 0.0, 0.10 and 0.20
indium mole-fractions, only spontaneous emission for the 0.30 molefraction
and no emission at all for the 0.40 mole-fraction.
A model was constructed which calculates the spectral gain of
quantum well laser diode epitaxial structures of arbitrary design,
including the band perturbations due to the inherent strain in the
pseudomorphic InGaAs. The transition energy of highest gain,
calculated as a function of indium mole-fraction, matches that
measured from the fabricated devices. Extension of the model to high
indium concentration structures predicts that device operation at 1.3
micron wavelength should be achievable in this system.
Advisors/Committee Members: Arthur, John R. (advisor).
Subjects/Keywords: Semiconductor lasers
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APA (6th Edition):
Ebner, J. (1989). Growth, fabrication and modeling of pseudomorphic laser diodes. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/38315
Chicago Manual of Style (16th Edition):
Ebner, John. “Growth, fabrication and modeling of pseudomorphic laser diodes.” 1989. Doctoral Dissertation, Oregon State University. Accessed February 27, 2021.
http://hdl.handle.net/1957/38315.
MLA Handbook (7th Edition):
Ebner, John. “Growth, fabrication and modeling of pseudomorphic laser diodes.” 1989. Web. 27 Feb 2021.
Vancouver:
Ebner J. Growth, fabrication and modeling of pseudomorphic laser diodes. [Internet] [Doctoral dissertation]. Oregon State University; 1989. [cited 2021 Feb 27].
Available from: http://hdl.handle.net/1957/38315.
Council of Science Editors:
Ebner J. Growth, fabrication and modeling of pseudomorphic laser diodes. [Doctoral Dissertation]. Oregon State University; 1989. Available from: http://hdl.handle.net/1957/38315
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Open Access Theses and Dissertations
