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You searched for subject:(reference field effect transistor REFET ). Showing records 1 – 30 of 35526 total matches.

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University of Illinois – Urbana-Champaign

1. Salm, Eric. Transistor-based biosensing: expanding the functionality of field effect transistors.

Degree: PhD, 0408, 2014, University of Illinois – Urbana-Champaign

 Since the invention of Polymerase Chain Reaction (PCR)-based amplification of nucleic acids by Kary Mullis in 1983(1), researchers have spent significant efforts to improve the… (more)

Subjects/Keywords: Electrical biosensor; ion-sensitive field-effect transistor (ISFET); Field Effect Transistor (FET); reference field-effect transistor (REFET); solid-state electrode; nucleic acid amplification; Loop-mediated isothermal amplification (LAMP); Polymerase chain reaction (PCR); single cell lysis; droplet; DNA denaturation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Salm, E. (2014). Transistor-based biosensing: expanding the functionality of field effect transistors. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/49827

Chicago Manual of Style (16th Edition):

Salm, Eric. “Transistor-based biosensing: expanding the functionality of field effect transistors.” 2014. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 21, 2019. http://hdl.handle.net/2142/49827.

MLA Handbook (7th Edition):

Salm, Eric. “Transistor-based biosensing: expanding the functionality of field effect transistors.” 2014. Web. 21 Nov 2019.

Vancouver:

Salm E. Transistor-based biosensing: expanding the functionality of field effect transistors. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2014. [cited 2019 Nov 21]. Available from: http://hdl.handle.net/2142/49827.

Council of Science Editors:

Salm E. Transistor-based biosensing: expanding the functionality of field effect transistors. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/49827


University of Waterloo

2. Ellard, Jackson. Thiophene-S,S-dioxidized indophenine for use in organic field effect transistors.

Degree: 2016, University of Waterloo

 To address the need for better n-type organic semiconductors, thiophene-S,S-dioxidized indophenine (IDTO) was developed. IDTO is a planar quinoidal molecule with deep energy levels which… (more)

Subjects/Keywords: organic field effect transistor

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APA (6th Edition):

Ellard, J. (2016). Thiophene-S,S-dioxidized indophenine for use in organic field effect transistors. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/11137

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ellard, Jackson. “Thiophene-S,S-dioxidized indophenine for use in organic field effect transistors.” 2016. Thesis, University of Waterloo. Accessed November 21, 2019. http://hdl.handle.net/10012/11137.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ellard, Jackson. “Thiophene-S,S-dioxidized indophenine for use in organic field effect transistors.” 2016. Web. 21 Nov 2019.

Vancouver:

Ellard J. Thiophene-S,S-dioxidized indophenine for use in organic field effect transistors. [Internet] [Thesis]. University of Waterloo; 2016. [cited 2019 Nov 21]. Available from: http://hdl.handle.net/10012/11137.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ellard J. Thiophene-S,S-dioxidized indophenine for use in organic field effect transistors. [Thesis]. University of Waterloo; 2016. Available from: http://hdl.handle.net/10012/11137

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Texas – Austin

3. Ponath, Patrick. Epitaxial functional oxide integration on germanium.

Degree: PhD, Physics, 2017, University of Texas – Austin

 Germanium, with its higher hole and electron mobility is a potential candidate to replace silicon as a channel material in a field effect transistor in… (more)

Subjects/Keywords: Ferroelectric field-effect transistor; Germanium

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APA (6th Edition):

Ponath, P. (2017). Epitaxial functional oxide integration on germanium. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/63060

Chicago Manual of Style (16th Edition):

Ponath, Patrick. “Epitaxial functional oxide integration on germanium.” 2017. Doctoral Dissertation, University of Texas – Austin. Accessed November 21, 2019. http://hdl.handle.net/2152/63060.

MLA Handbook (7th Edition):

Ponath, Patrick. “Epitaxial functional oxide integration on germanium.” 2017. Web. 21 Nov 2019.

Vancouver:

Ponath P. Epitaxial functional oxide integration on germanium. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2017. [cited 2019 Nov 21]. Available from: http://hdl.handle.net/2152/63060.

Council of Science Editors:

Ponath P. Epitaxial functional oxide integration on germanium. [Doctoral Dissertation]. University of Texas – Austin; 2017. Available from: http://hdl.handle.net/2152/63060


NSYSU

4. Hung, Wei-Che. Development of a Carbon Dioxide Micro Gas Sensor with Integrated AgCl Reference Electrode.

Degree: Master, Electrical Engineering, 2013, NSYSU

 ããIn recent years, high carbon dioxide emissions not only result in serious air pollution and greenhouse effect, but also cause water acidification and decrease the… (more)

Subjects/Keywords: micro reference electrode; KCl-gel; gas-permeable membrane; extended gate field effect transistor; solid electrolyte membrane

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APA (6th Edition):

Hung, W. (2013). Development of a Carbon Dioxide Micro Gas Sensor with Integrated AgCl Reference Electrode. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721113-191322

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hung, Wei-Che. “Development of a Carbon Dioxide Micro Gas Sensor with Integrated AgCl Reference Electrode.” 2013. Thesis, NSYSU. Accessed November 21, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721113-191322.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hung, Wei-Che. “Development of a Carbon Dioxide Micro Gas Sensor with Integrated AgCl Reference Electrode.” 2013. Web. 21 Nov 2019.

Vancouver:

Hung W. Development of a Carbon Dioxide Micro Gas Sensor with Integrated AgCl Reference Electrode. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Nov 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721113-191322.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hung W. Development of a Carbon Dioxide Micro Gas Sensor with Integrated AgCl Reference Electrode. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721113-191322

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

5. Yeh, Yi-Chan. Development of a High Sensitivity EGFET-based Pesticides Microsensor with Integrated AgCl Reference Electrode for Organophosphorus and Carbamate Detection.

Degree: Master, Electrical Engineering, 2018, NSYSU

 Although pesticides contribute to the harvest of agricultural products, their toxicity will not only damage the ecological environment of the surface, but also endanger human… (more)

Subjects/Keywords: acetylcholinesterase enzyme; AuRh bimetallic nanocrystals; pesticides microsensor; carbamates; micro reference electrode; extended gate field-effect transistor; organophosphorus

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APA (6th Edition):

Yeh, Y. (2018). Development of a High Sensitivity EGFET-based Pesticides Microsensor with Integrated AgCl Reference Electrode for Organophosphorus and Carbamate Detection. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0730118-140023

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yeh, Yi-Chan. “Development of a High Sensitivity EGFET-based Pesticides Microsensor with Integrated AgCl Reference Electrode for Organophosphorus and Carbamate Detection.” 2018. Thesis, NSYSU. Accessed November 21, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0730118-140023.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yeh, Yi-Chan. “Development of a High Sensitivity EGFET-based Pesticides Microsensor with Integrated AgCl Reference Electrode for Organophosphorus and Carbamate Detection.” 2018. Web. 21 Nov 2019.

Vancouver:

Yeh Y. Development of a High Sensitivity EGFET-based Pesticides Microsensor with Integrated AgCl Reference Electrode for Organophosphorus and Carbamate Detection. [Internet] [Thesis]. NSYSU; 2018. [cited 2019 Nov 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0730118-140023.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yeh Y. Development of a High Sensitivity EGFET-based Pesticides Microsensor with Integrated AgCl Reference Electrode for Organophosphorus and Carbamate Detection. [Thesis]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0730118-140023

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of California – Riverside

6. KUO, CHUN-TE. Reversible Synthesis Graphene Oxide Through Controllable Chemical Potential Via Back-Gate Bias: Mechanism and Application.

Degree: Chemical and Environmental Engineering, 2015, University of California – Riverside

 Graphene is a single layer of carbon atoms densely packed in a two-dimensional (2D) sp2 -bonded carbon hexagonal lattice and is considered as an essential… (more)

Subjects/Keywords: Engineering; field effect transistor; graphene; graphene oxide

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APA (6th Edition):

KUO, C. (2015). Reversible Synthesis Graphene Oxide Through Controllable Chemical Potential Via Back-Gate Bias: Mechanism and Application. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/6gv3z7b4

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

KUO, CHUN-TE. “Reversible Synthesis Graphene Oxide Through Controllable Chemical Potential Via Back-Gate Bias: Mechanism and Application.” 2015. Thesis, University of California – Riverside. Accessed November 21, 2019. http://www.escholarship.org/uc/item/6gv3z7b4.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

KUO, CHUN-TE. “Reversible Synthesis Graphene Oxide Through Controllable Chemical Potential Via Back-Gate Bias: Mechanism and Application.” 2015. Web. 21 Nov 2019.

Vancouver:

KUO C. Reversible Synthesis Graphene Oxide Through Controllable Chemical Potential Via Back-Gate Bias: Mechanism and Application. [Internet] [Thesis]. University of California – Riverside; 2015. [cited 2019 Nov 21]. Available from: http://www.escholarship.org/uc/item/6gv3z7b4.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

KUO C. Reversible Synthesis Graphene Oxide Through Controllable Chemical Potential Via Back-Gate Bias: Mechanism and Application. [Thesis]. University of California – Riverside; 2015. Available from: http://www.escholarship.org/uc/item/6gv3z7b4

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Southern California

7. Song, Yan. Surface functionalization of nanomaterials and development of field effect transistor nanobiosensors.

Degree: PhD, Chemistry, 2015, University of Southern California

 Researchers have been developing Point‐Of‐Care Testing (POCT) devices over the past decade to potentially substitute the current lab‐based disease diagnostic technologies with improved portability and… (more)

Subjects/Keywords: surface functionalization; nanomaterials; nanobiosensors; field effect transistor

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APA (6th Edition):

Song, Y. (2015). Surface functionalization of nanomaterials and development of field effect transistor nanobiosensors. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/573971/rec/6227

Chicago Manual of Style (16th Edition):

Song, Yan. “Surface functionalization of nanomaterials and development of field effect transistor nanobiosensors.” 2015. Doctoral Dissertation, University of Southern California. Accessed November 21, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/573971/rec/6227.

MLA Handbook (7th Edition):

Song, Yan. “Surface functionalization of nanomaterials and development of field effect transistor nanobiosensors.” 2015. Web. 21 Nov 2019.

Vancouver:

Song Y. Surface functionalization of nanomaterials and development of field effect transistor nanobiosensors. [Internet] [Doctoral dissertation]. University of Southern California; 2015. [cited 2019 Nov 21]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/573971/rec/6227.

Council of Science Editors:

Song Y. Surface functionalization of nanomaterials and development of field effect transistor nanobiosensors. [Doctoral Dissertation]. University of Southern California; 2015. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/573971/rec/6227


Tulane University

8. Liu, Xue. Electronic transport studies of low dimensional van der Waals materials.

Degree: 2017, Tulane University

Ever since the successful isolation of graphene, plenty of researches have been pursued to study fundamental physics in low-dimensional van der Waals materials, referred to… (more)

Subjects/Keywords: Low dimension; field-effect transistor; quantum confinement

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APA (6th Edition):

Liu, X. (2017). Electronic transport studies of low dimensional van der Waals materials. (Thesis). Tulane University. Retrieved from https://digitallibrary.tulane.edu/islandora/object/tulane:75688

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Xue. “Electronic transport studies of low dimensional van der Waals materials.” 2017. Thesis, Tulane University. Accessed November 21, 2019. https://digitallibrary.tulane.edu/islandora/object/tulane:75688.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Xue. “Electronic transport studies of low dimensional van der Waals materials.” 2017. Web. 21 Nov 2019.

Vancouver:

Liu X. Electronic transport studies of low dimensional van der Waals materials. [Internet] [Thesis]. Tulane University; 2017. [cited 2019 Nov 21]. Available from: https://digitallibrary.tulane.edu/islandora/object/tulane:75688.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu X. Electronic transport studies of low dimensional van der Waals materials. [Thesis]. Tulane University; 2017. Available from: https://digitallibrary.tulane.edu/islandora/object/tulane:75688

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

9. Choi, Jonghyun. Three-dimensional graphene/graphite structure for ultra-sensitive biosensor.

Degree: MS, 0133, 2014, University of Illinois – Urbana-Champaign

 Graphene has been attracting significant research interests for post-silicon electronics due to its unique properties such as extraordinarily high carrier mobility, mechanical robustness/flexibility and biocompatibility.… (more)

Subjects/Keywords: Graphene; Bio-sensing; Field Effect Transistor (FET)

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APA (6th Edition):

Choi, J. (2014). Three-dimensional graphene/graphite structure for ultra-sensitive biosensor. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/50491

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Choi, Jonghyun. “Three-dimensional graphene/graphite structure for ultra-sensitive biosensor.” 2014. Thesis, University of Illinois – Urbana-Champaign. Accessed November 21, 2019. http://hdl.handle.net/2142/50491.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Choi, Jonghyun. “Three-dimensional graphene/graphite structure for ultra-sensitive biosensor.” 2014. Web. 21 Nov 2019.

Vancouver:

Choi J. Three-dimensional graphene/graphite structure for ultra-sensitive biosensor. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2014. [cited 2019 Nov 21]. Available from: http://hdl.handle.net/2142/50491.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Choi J. Three-dimensional graphene/graphite structure for ultra-sensitive biosensor. [Thesis]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/50491

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Arizona State University

10. Pang, Pei. Carbon Nanotube Based Nanofluidic Devices.

Degree: PhD, Physics, 2011, Arizona State University

 Nanofluidic devices in which one single-walled carbon nanotube (SWCNT) spans a barrier between two fluid reservoirs were constructed, enabling direct electrical measurement of the transport… (more)

Subjects/Keywords: Physics; Biophysics; Carbon Nanotube; CNT field effect transistor; Ionic field effect transistor; Nanofluidics; Nanopore/Nanochannel

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APA (6th Edition):

Pang, P. (2011). Carbon Nanotube Based Nanofluidic Devices. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/14268

Chicago Manual of Style (16th Edition):

Pang, Pei. “Carbon Nanotube Based Nanofluidic Devices.” 2011. Doctoral Dissertation, Arizona State University. Accessed November 21, 2019. http://repository.asu.edu/items/14268.

MLA Handbook (7th Edition):

Pang, Pei. “Carbon Nanotube Based Nanofluidic Devices.” 2011. Web. 21 Nov 2019.

Vancouver:

Pang P. Carbon Nanotube Based Nanofluidic Devices. [Internet] [Doctoral dissertation]. Arizona State University; 2011. [cited 2019 Nov 21]. Available from: http://repository.asu.edu/items/14268.

Council of Science Editors:

Pang P. Carbon Nanotube Based Nanofluidic Devices. [Doctoral Dissertation]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/14268


University of Illinois – Urbana-Champaign

11. Chabak, Kelson D. Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels.

Degree: PhD, Electrical & Computer Engr, 2016, University of Illinois – Urbana-Champaign

 This dissertation research effort explores new transistor topologies using three-dimensional nanowire (NW)-array channels formed by both bottom-up and top-down synthesis. The bottom-up NW research centers… (more)

Subjects/Keywords: nanowire transistor; High-electron-mobility transistor (HEMT); Fin field effect transistor (finFET); vapor-liquid-solid; gallium oxide; Metal–oxide–semiconductor field-effect transistor (MOSFET); wrap-gate

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APA (6th Edition):

Chabak, K. D. (2016). Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/95466

Chicago Manual of Style (16th Edition):

Chabak, Kelson D. “Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels.” 2016. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 21, 2019. http://hdl.handle.net/2142/95466.

MLA Handbook (7th Edition):

Chabak, Kelson D. “Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels.” 2016. Web. 21 Nov 2019.

Vancouver:

Chabak KD. Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2016. [cited 2019 Nov 21]. Available from: http://hdl.handle.net/2142/95466.

Council of Science Editors:

Chabak KD. Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2016. Available from: http://hdl.handle.net/2142/95466


UCLA

12. Pan, Andrew. Physics and Modeling of Tunneling in Low Power Transistors.

Degree: Electrical Engineering, 2015, UCLA

 As CMOS electronics grow ever more ubiquitous and essential to modern life, managing and reducing power dissipation becomes essential. At the device level, this requires… (more)

Subjects/Keywords: Electrical engineering; analytical modeling; field-effect transistor; interband tunneling; non-equilibrium green's functions; quantum transport; tunneling field-effect transistor (TFET)

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APA (6th Edition):

Pan, A. (2015). Physics and Modeling of Tunneling in Low Power Transistors. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/28p6j4vf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pan, Andrew. “Physics and Modeling of Tunneling in Low Power Transistors.” 2015. Thesis, UCLA. Accessed November 21, 2019. http://www.escholarship.org/uc/item/28p6j4vf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pan, Andrew. “Physics and Modeling of Tunneling in Low Power Transistors.” 2015. Web. 21 Nov 2019.

Vancouver:

Pan A. Physics and Modeling of Tunneling in Low Power Transistors. [Internet] [Thesis]. UCLA; 2015. [cited 2019 Nov 21]. Available from: http://www.escholarship.org/uc/item/28p6j4vf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pan A. Physics and Modeling of Tunneling in Low Power Transistors. [Thesis]. UCLA; 2015. Available from: http://www.escholarship.org/uc/item/28p6j4vf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

13. Joiner, Corey Alexander. Impact of materials disorder on graphene heterostructure devices.

Degree: PhD, Materials Science and Engineering, 2016, Georgia Tech

 This work is focused on characterizing the impact of material based disorder on the properties of graphene based vertical tunneling heterostructures. The motivation and challenges… (more)

Subjects/Keywords: Tunneling field effect transistor; Graphene; Molybdenum disulfide; Hexagonal boron nitride; Field effect transistor; TFET; FET; CMOS

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APA (6th Edition):

Joiner, C. A. (2016). Impact of materials disorder on graphene heterostructure devices. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/56243

Chicago Manual of Style (16th Edition):

Joiner, Corey Alexander. “Impact of materials disorder on graphene heterostructure devices.” 2016. Doctoral Dissertation, Georgia Tech. Accessed November 21, 2019. http://hdl.handle.net/1853/56243.

MLA Handbook (7th Edition):

Joiner, Corey Alexander. “Impact of materials disorder on graphene heterostructure devices.” 2016. Web. 21 Nov 2019.

Vancouver:

Joiner CA. Impact of materials disorder on graphene heterostructure devices. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Nov 21]. Available from: http://hdl.handle.net/1853/56243.

Council of Science Editors:

Joiner CA. Impact of materials disorder on graphene heterostructure devices. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/56243


University of Illinois – Urbana-Champaign

14. Vilasur Swaminathan, Vikhram. Electrostatic control of microfluidic systems for enhancement of nanoparticle separations and FET nanobiosensors.

Degree: PhD, Mechanical Engineering, 2015, University of Illinois – Urbana-Champaign

 An abundance of ions in saline media or physiological buffers causes extensive shielding of charged surfaces and potentials. As a result, electrostatic forces cannot penetrate… (more)

Subjects/Keywords: microfluidics; nanofluidics; nanotechnology; biosensor; nanobiosensor; field-effect; colloid; separation; dielectrophoresis; Field Effect Transistor (FET)

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APA (6th Edition):

Vilasur Swaminathan, V. (2015). Electrostatic control of microfluidic systems for enhancement of nanoparticle separations and FET nanobiosensors. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/88933

Chicago Manual of Style (16th Edition):

Vilasur Swaminathan, Vikhram. “Electrostatic control of microfluidic systems for enhancement of nanoparticle separations and FET nanobiosensors.” 2015. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 21, 2019. http://hdl.handle.net/2142/88933.

MLA Handbook (7th Edition):

Vilasur Swaminathan, Vikhram. “Electrostatic control of microfluidic systems for enhancement of nanoparticle separations and FET nanobiosensors.” 2015. Web. 21 Nov 2019.

Vancouver:

Vilasur Swaminathan V. Electrostatic control of microfluidic systems for enhancement of nanoparticle separations and FET nanobiosensors. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2015. [cited 2019 Nov 21]. Available from: http://hdl.handle.net/2142/88933.

Council of Science Editors:

Vilasur Swaminathan V. Electrostatic control of microfluidic systems for enhancement of nanoparticle separations and FET nanobiosensors. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/88933


NSYSU

15. Hsu, Shi-Ya. Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen.

Degree: Master, Physics, 2012, NSYSU

 Abstract ããBiosensor chip has a lot of advantages, such as label-free, ultra-sensitive, highly selective, fast and real-time detection. Fabricating biosensor chip has great benefits for… (more)

Subjects/Keywords: silicon nanorod; biotin; field effect transistor; streptavidin; pancreatic cancer; Biosensor; high electron mobility transistor

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsu, S. (2012). Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-231225

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsu, Shi-Ya. “Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen.” 2012. Thesis, NSYSU. Accessed November 21, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-231225.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsu, Shi-Ya. “Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen.” 2012. Web. 21 Nov 2019.

Vancouver:

Hsu S. Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Nov 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-231225.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsu S. Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-231225

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

16. Lin, Zheng-Yi. Impacts of Active Layer Thickness on Electrical Characteristics of Poly-Si Tunnel Transistors.

Degree: Master, Electrical Engineering, 2017, NSYSU

 In recent years, low power devices such as tunneling field-effect transistor (TFET) have attracted much attention, which have steep subthreshold swing and low leakage current,… (more)

Subjects/Keywords: temperature effect; series resistance effect; solid phase crystallization; active layer; tunneling field-effect transistor (TFET)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, Z. (2017). Impacts of Active Layer Thickness on Electrical Characteristics of Poly-Si Tunnel Transistors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-235533

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Zheng-Yi. “Impacts of Active Layer Thickness on Electrical Characteristics of Poly-Si Tunnel Transistors.” 2017. Thesis, NSYSU. Accessed November 21, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-235533.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Zheng-Yi. “Impacts of Active Layer Thickness on Electrical Characteristics of Poly-Si Tunnel Transistors.” 2017. Web. 21 Nov 2019.

Vancouver:

Lin Z. Impacts of Active Layer Thickness on Electrical Characteristics of Poly-Si Tunnel Transistors. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Nov 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-235533.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin Z. Impacts of Active Layer Thickness on Electrical Characteristics of Poly-Si Tunnel Transistors. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-235533

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Anna University

17. Jamuna V. Artificial neural network Controlled energy saver for Induction motor drive;.

Degree: Artificial neural network Controlled energy saver for Induction motor drive, 2014, Anna University

Voltage controllers are applied as motor soft starters and sometimes newlineas energy savers reducing the flux level in induction motors in accordance newlinewith the load… (more)

Subjects/Keywords: Metal oxide semiconductor field effect transistor; Pulse width modulation

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APA (6th Edition):

V, J. (2014). Artificial neural network Controlled energy saver for Induction motor drive;. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/28431

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

V, Jamuna. “Artificial neural network Controlled energy saver for Induction motor drive;.” 2014. Thesis, Anna University. Accessed November 21, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/28431.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

V, Jamuna. “Artificial neural network Controlled energy saver for Induction motor drive;.” 2014. Web. 21 Nov 2019.

Vancouver:

V J. Artificial neural network Controlled energy saver for Induction motor drive;. [Internet] [Thesis]. Anna University; 2014. [cited 2019 Nov 21]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/28431.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

V J. Artificial neural network Controlled energy saver for Induction motor drive;. [Thesis]. Anna University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/28431

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Heriot-Watt University

18. Manookian, Wahak Z. Influence of preparation condition on hydrogenated amorphous silicon FETs.

Degree: PhD, 1987, Heriot-Watt University

Subjects/Keywords: 621.31042; Field effect transistor device

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APA (6th Edition):

Manookian, W. Z. (1987). Influence of preparation condition on hydrogenated amorphous silicon FETs. (Doctoral Dissertation). Heriot-Watt University. Retrieved from http://hdl.handle.net/10399/1056

Chicago Manual of Style (16th Edition):

Manookian, Wahak Z. “Influence of preparation condition on hydrogenated amorphous silicon FETs.” 1987. Doctoral Dissertation, Heriot-Watt University. Accessed November 21, 2019. http://hdl.handle.net/10399/1056.

MLA Handbook (7th Edition):

Manookian, Wahak Z. “Influence of preparation condition on hydrogenated amorphous silicon FETs.” 1987. Web. 21 Nov 2019.

Vancouver:

Manookian WZ. Influence of preparation condition on hydrogenated amorphous silicon FETs. [Internet] [Doctoral dissertation]. Heriot-Watt University; 1987. [cited 2019 Nov 21]. Available from: http://hdl.handle.net/10399/1056.

Council of Science Editors:

Manookian WZ. Influence of preparation condition on hydrogenated amorphous silicon FETs. [Doctoral Dissertation]. Heriot-Watt University; 1987. Available from: http://hdl.handle.net/10399/1056


Victoria University of Wellington

19. Matthews, Campbell. Laterally Grown ZnO Nanowires for Sensing Applications.

Degree: 2018, Victoria University of Wellington

 Zinc oxide nanowires are a semiconducting material that has many uses in electronic applications. In particular, ZnO nanowires have been used in field effect transistors… (more)

Subjects/Keywords: ZnO; Nanowires; FET; Sensing; Device; Field effect transistor; Zinc Oxide; Nanomaterials

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APA (6th Edition):

Matthews, C. (2018). Laterally Grown ZnO Nanowires for Sensing Applications. (Masters Thesis). Victoria University of Wellington. Retrieved from http://hdl.handle.net/10063/6993

Chicago Manual of Style (16th Edition):

Matthews, Campbell. “Laterally Grown ZnO Nanowires for Sensing Applications.” 2018. Masters Thesis, Victoria University of Wellington. Accessed November 21, 2019. http://hdl.handle.net/10063/6993.

MLA Handbook (7th Edition):

Matthews, Campbell. “Laterally Grown ZnO Nanowires for Sensing Applications.” 2018. Web. 21 Nov 2019.

Vancouver:

Matthews C. Laterally Grown ZnO Nanowires for Sensing Applications. [Internet] [Masters thesis]. Victoria University of Wellington; 2018. [cited 2019 Nov 21]. Available from: http://hdl.handle.net/10063/6993.

Council of Science Editors:

Matthews C. Laterally Grown ZnO Nanowires for Sensing Applications. [Masters Thesis]. Victoria University of Wellington; 2018. Available from: http://hdl.handle.net/10063/6993


The Ohio State University

20. Lincoln, Derek M. The electronic structure and field effects of an organic-based room temperature magnetic semiconductor.

Degree: PhD, Chemistry, 2007, The Ohio State University

 Vanadium tetracyanoethylene (V[TCNE]~2) is a magnetic semiconductor with an ordering temperature well above room temperature. Its highly disordered structure has hampered comprehensive descriptions of interactions… (more)

Subjects/Keywords: Organic magnet; Magnetic semiconductor; Vanadium tetracyanoethylene; Field effect transistor

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APA (6th Edition):

Lincoln, D. M. (2007). The electronic structure and field effects of an organic-based room temperature magnetic semiconductor. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1193833038

Chicago Manual of Style (16th Edition):

Lincoln, Derek M. “The electronic structure and field effects of an organic-based room temperature magnetic semiconductor.” 2007. Doctoral Dissertation, The Ohio State University. Accessed November 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1193833038.

MLA Handbook (7th Edition):

Lincoln, Derek M. “The electronic structure and field effects of an organic-based room temperature magnetic semiconductor.” 2007. Web. 21 Nov 2019.

Vancouver:

Lincoln DM. The electronic structure and field effects of an organic-based room temperature magnetic semiconductor. [Internet] [Doctoral dissertation]. The Ohio State University; 2007. [cited 2019 Nov 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1193833038.

Council of Science Editors:

Lincoln DM. The electronic structure and field effects of an organic-based room temperature magnetic semiconductor. [Doctoral Dissertation]. The Ohio State University; 2007. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1193833038


NSYSU

21. Yang, Chia-Ching. Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam.

Degree: Master, Physics, 2008, NSYSU

 We have grown the high quality AlGaN/GaN heterostructure by plasma-assisted molecular beam epitaxy. We obtained the mobility of two-dimensional electron gas of the AlGaN/GaN is… (more)

Subjects/Keywords: focus ion beam; nanowire; metal oxide semiconductor field effect transistor

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APA (6th Edition):

Yang, C. (2008). Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Chia-Ching. “Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam.” 2008. Thesis, NSYSU. Accessed November 21, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Chia-Ching. “Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam.” 2008. Web. 21 Nov 2019.

Vancouver:

Yang C. Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Nov 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang C. Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

22. Cazalas, Edward Jay. Radiation Sensitivity of Graphene Field Effect Transistors and Other Thin Film Architectures.

Degree: PhD, Nuclear Engineering, 2014, Penn State University

 An important contemporary motivation for advancing radiation detection science and technology is the need for interdiction of nuclear and radiological materials, which may be used… (more)

Subjects/Keywords: graphene; field effect transistor; neutron; detection; radiation; thin film; hysteresis

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APA (6th Edition):

Cazalas, E. J. (2014). Radiation Sensitivity of Graphene Field Effect Transistors and Other Thin Film Architectures. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/24270

Chicago Manual of Style (16th Edition):

Cazalas, Edward Jay. “Radiation Sensitivity of Graphene Field Effect Transistors and Other Thin Film Architectures.” 2014. Doctoral Dissertation, Penn State University. Accessed November 21, 2019. https://etda.libraries.psu.edu/catalog/24270.

MLA Handbook (7th Edition):

Cazalas, Edward Jay. “Radiation Sensitivity of Graphene Field Effect Transistors and Other Thin Film Architectures.” 2014. Web. 21 Nov 2019.

Vancouver:

Cazalas EJ. Radiation Sensitivity of Graphene Field Effect Transistors and Other Thin Film Architectures. [Internet] [Doctoral dissertation]. Penn State University; 2014. [cited 2019 Nov 21]. Available from: https://etda.libraries.psu.edu/catalog/24270.

Council of Science Editors:

Cazalas EJ. Radiation Sensitivity of Graphene Field Effect Transistors and Other Thin Film Architectures. [Doctoral Dissertation]. Penn State University; 2014. Available from: https://etda.libraries.psu.edu/catalog/24270


UCLA

23. Ma, Siguang. Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation.

Degree: Electrical Engineering, 2014, UCLA

 In this thesis we mainly focus on silicon germanium based gate normal tunnel field effect transistor. We carried out TCAD modeling with special attention paid… (more)

Subjects/Keywords: Engineering; Electrical engineering; Field Effect Transistor; Germanium; Low Power; Silicon; Tunneling

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APA (6th Edition):

Ma, S. (2014). Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/1hr0n43f

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ma, Siguang. “Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation.” 2014. Thesis, UCLA. Accessed November 21, 2019. http://www.escholarship.org/uc/item/1hr0n43f.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ma, Siguang. “Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation.” 2014. Web. 21 Nov 2019.

Vancouver:

Ma S. Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation. [Internet] [Thesis]. UCLA; 2014. [cited 2019 Nov 21]. Available from: http://www.escholarship.org/uc/item/1hr0n43f.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ma S. Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation. [Thesis]. UCLA; 2014. Available from: http://www.escholarship.org/uc/item/1hr0n43f

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


UCLA

24. Wu, Hao. Barrier-free contact to MoS2 transistor and the transport properties of its localized states.

Degree: Materials Science and Engineering, 2017, UCLA

 The two-dimensional layered materials such as molybdenum disulfide (MoS2) have attracted tremendous interest as a new class of electronic materials. However, there are considerable challenges… (more)

Subjects/Keywords: Engineering; electronic transport; field effect transistor; two dimensional materials

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APA (6th Edition):

Wu, H. (2017). Barrier-free contact to MoS2 transistor and the transport properties of its localized states. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/5jv4z3w6

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Hao. “Barrier-free contact to MoS2 transistor and the transport properties of its localized states.” 2017. Thesis, UCLA. Accessed November 21, 2019. http://www.escholarship.org/uc/item/5jv4z3w6.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Hao. “Barrier-free contact to MoS2 transistor and the transport properties of its localized states.” 2017. Web. 21 Nov 2019.

Vancouver:

Wu H. Barrier-free contact to MoS2 transistor and the transport properties of its localized states. [Internet] [Thesis]. UCLA; 2017. [cited 2019 Nov 21]. Available from: http://www.escholarship.org/uc/item/5jv4z3w6.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu H. Barrier-free contact to MoS2 transistor and the transport properties of its localized states. [Thesis]. UCLA; 2017. Available from: http://www.escholarship.org/uc/item/5jv4z3w6

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


UCLA

25. GUO, JIAN. Two-dimensional semiconductor and heterostructure for novel electronics and optoelectronics.

Degree: Materials Science and Engineering, 2019, UCLA

 The success of carbon nanotubes and graphene drives people to continuously search for novel low dimensional materials. Among the various discovered two-dimensional (2D) materials, 2D… (more)

Subjects/Keywords: Materials Science; 2D semiconductor; field effect transistor; heterostructure; memory; photodetector

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APA (6th Edition):

GUO, J. (2019). Two-dimensional semiconductor and heterostructure for novel electronics and optoelectronics. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/1x61r9x3

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

GUO, JIAN. “Two-dimensional semiconductor and heterostructure for novel electronics and optoelectronics.” 2019. Thesis, UCLA. Accessed November 21, 2019. http://www.escholarship.org/uc/item/1x61r9x3.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

GUO, JIAN. “Two-dimensional semiconductor and heterostructure for novel electronics and optoelectronics.” 2019. Web. 21 Nov 2019.

Vancouver:

GUO J. Two-dimensional semiconductor and heterostructure for novel electronics and optoelectronics. [Internet] [Thesis]. UCLA; 2019. [cited 2019 Nov 21]. Available from: http://www.escholarship.org/uc/item/1x61r9x3.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

GUO J. Two-dimensional semiconductor and heterostructure for novel electronics and optoelectronics. [Thesis]. UCLA; 2019. Available from: http://www.escholarship.org/uc/item/1x61r9x3

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Miami

26. Cho, Seongman. Study on Ultra Wideband Spectral Response and Efficient Hot Electron Detection using Plasmon Field Effect Transistor.

Degree: PhD, Electrical and Computer Engineering (Engineering), 2017, University of Miami

 Plasmon based field effect transistors (FET) can be used to convert energy induced by incident optical radiation to electrical energy. Plasmonic FETs can efficiently detect… (more)

Subjects/Keywords: Plasmon Field Effect Transistor; broadband photodetection; Localized surface plasmon resonance

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APA (6th Edition):

Cho, S. (2017). Study on Ultra Wideband Spectral Response and Efficient Hot Electron Detection using Plasmon Field Effect Transistor. (Doctoral Dissertation). University of Miami. Retrieved from https://scholarlyrepository.miami.edu/oa_dissertations/1985

Chicago Manual of Style (16th Edition):

Cho, Seongman. “Study on Ultra Wideband Spectral Response and Efficient Hot Electron Detection using Plasmon Field Effect Transistor.” 2017. Doctoral Dissertation, University of Miami. Accessed November 21, 2019. https://scholarlyrepository.miami.edu/oa_dissertations/1985.

MLA Handbook (7th Edition):

Cho, Seongman. “Study on Ultra Wideband Spectral Response and Efficient Hot Electron Detection using Plasmon Field Effect Transistor.” 2017. Web. 21 Nov 2019.

Vancouver:

Cho S. Study on Ultra Wideband Spectral Response and Efficient Hot Electron Detection using Plasmon Field Effect Transistor. [Internet] [Doctoral dissertation]. University of Miami; 2017. [cited 2019 Nov 21]. Available from: https://scholarlyrepository.miami.edu/oa_dissertations/1985.

Council of Science Editors:

Cho S. Study on Ultra Wideband Spectral Response and Efficient Hot Electron Detection using Plasmon Field Effect Transistor. [Doctoral Dissertation]. University of Miami; 2017. Available from: https://scholarlyrepository.miami.edu/oa_dissertations/1985


NSYSU

27. Yu, Rui-An. Study on hysteresis in two-dimensional InSe field effect transistors.

Degree: Master, Physics, 2018, NSYSU

Field effect transistors (FETs) made by few-layered indium selenide (InSe) exhibit good electrical characteristics. However, hysteresis is often observed in InSe-FETs which can affect intrinsic… (more)

Subjects/Keywords: Two-dimensional material; Indium selenide; Hysteresis; Field effect transistor; Traps

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APA (6th Edition):

Yu, R. (2018). Study on hysteresis in two-dimensional InSe field effect transistors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721118-141211

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yu, Rui-An. “Study on hysteresis in two-dimensional InSe field effect transistors.” 2018. Thesis, NSYSU. Accessed November 21, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721118-141211.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yu, Rui-An. “Study on hysteresis in two-dimensional InSe field effect transistors.” 2018. Web. 21 Nov 2019.

Vancouver:

Yu R. Study on hysteresis in two-dimensional InSe field effect transistors. [Internet] [Thesis]. NSYSU; 2018. [cited 2019 Nov 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721118-141211.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yu R. Study on hysteresis in two-dimensional InSe field effect transistors. [Thesis]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721118-141211

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Waterloo

28. Yin, Demin. Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors.

Degree: 2016, University of Waterloo

 Recently, a novel two-dimensional (2D) semiconductor of few-layer black phosphorus (BP) or phosphorene has been explored extensively for future electronic device applications. BP field-effect transistors… (more)

Subjects/Keywords: Black phosphorus; Field effect transistor; 2D material; Nonequilibrium Green's Functions

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APA (6th Edition):

Yin, D. (2016). Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/10646

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yin, Demin. “Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors.” 2016. Thesis, University of Waterloo. Accessed November 21, 2019. http://hdl.handle.net/10012/10646.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yin, Demin. “Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors.” 2016. Web. 21 Nov 2019.

Vancouver:

Yin D. Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors. [Internet] [Thesis]. University of Waterloo; 2016. [cited 2019 Nov 21]. Available from: http://hdl.handle.net/10012/10646.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yin D. Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors. [Thesis]. University of Waterloo; 2016. Available from: http://hdl.handle.net/10012/10646

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

29. Robbins, David H. Optimum gate arrangements for MOS standardized layouts.

Degree: MS, Electrical Engineering, 1975, University of Illinois – Urbana-Champaign

 Optimization of size is an important topic of research in the engineering of digital circuits. The field effect transistor (FET) is making an important contribution… (more)

Subjects/Keywords: Field Effect Transistor (FET)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Robbins, D. H. (1975). Optimum gate arrangements for MOS standardized layouts. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/45707

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Robbins, David H. “Optimum gate arrangements for MOS standardized layouts.” 1975. Thesis, University of Illinois – Urbana-Champaign. Accessed November 21, 2019. http://hdl.handle.net/2142/45707.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Robbins, David H. “Optimum gate arrangements for MOS standardized layouts.” 1975. Web. 21 Nov 2019.

Vancouver:

Robbins DH. Optimum gate arrangements for MOS standardized layouts. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 1975. [cited 2019 Nov 21]. Available from: http://hdl.handle.net/2142/45707.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Robbins DH. Optimum gate arrangements for MOS standardized layouts. [Thesis]. University of Illinois – Urbana-Champaign; 1975. Available from: http://hdl.handle.net/2142/45707

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New South Wales

30. Tan, Kuan-Yen. Transport spectroscopy of single phosphorus donors in a silicon nanoscale transistor.

Degree: ARC Centre of Excellence for Quantum Computer Technology, 2010, University of New South Wales

 This thesis demonstrates the fabrication and the measurement of single-electron tunnelling through deliberately implanted individual phosphorus (P) donors in double-gated silicon nanoscale field-effect-transistors (nanoFET). These… (more)

Subjects/Keywords: Silicon; Electron spin; Phosphorus; Field effect transistor; Spintronic

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tan, K. (2010). Transport spectroscopy of single phosphorus donors in a silicon nanoscale transistor. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/45676 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:8958/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Tan, Kuan-Yen. “Transport spectroscopy of single phosphorus donors in a silicon nanoscale transistor.” 2010. Doctoral Dissertation, University of New South Wales. Accessed November 21, 2019. http://handle.unsw.edu.au/1959.4/45676 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:8958/SOURCE02?view=true.

MLA Handbook (7th Edition):

Tan, Kuan-Yen. “Transport spectroscopy of single phosphorus donors in a silicon nanoscale transistor.” 2010. Web. 21 Nov 2019.

Vancouver:

Tan K. Transport spectroscopy of single phosphorus donors in a silicon nanoscale transistor. [Internet] [Doctoral dissertation]. University of New South Wales; 2010. [cited 2019 Nov 21]. Available from: http://handle.unsw.edu.au/1959.4/45676 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:8958/SOURCE02?view=true.

Council of Science Editors:

Tan K. Transport spectroscopy of single phosphorus donors in a silicon nanoscale transistor. [Doctoral Dissertation]. University of New South Wales; 2010. Available from: http://handle.unsw.edu.au/1959.4/45676 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:8958/SOURCE02?view=true

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