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You searched for subject:(random telegraph noise). Showing records 1 – 12 of 12 total matches.

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University of Minnesota

1. Endean, Daniel E. The origin of magnetic noise in nanoscale square dots.

Degree: PhD, Physics, 2014, University of Minnesota

 Magnetic fluctuations, also referred to as magnetic noise, in very small (sub-micron) magnetic systems are important both in studying the fundamental physics of statistical mechanics… (more)

Subjects/Keywords: Anisotropy; Configurational anisotropy; Magnetism; Micromagnetic simulations; Noise; Random telegraph noise

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APA (6th Edition):

Endean, D. E. (2014). The origin of magnetic noise in nanoscale square dots. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/163725

Chicago Manual of Style (16th Edition):

Endean, Daniel E. “The origin of magnetic noise in nanoscale square dots.” 2014. Doctoral Dissertation, University of Minnesota. Accessed October 29, 2020. http://hdl.handle.net/11299/163725.

MLA Handbook (7th Edition):

Endean, Daniel E. “The origin of magnetic noise in nanoscale square dots.” 2014. Web. 29 Oct 2020.

Vancouver:

Endean DE. The origin of magnetic noise in nanoscale square dots. [Internet] [Doctoral dissertation]. University of Minnesota; 2014. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/11299/163725.

Council of Science Editors:

Endean DE. The origin of magnetic noise in nanoscale square dots. [Doctoral Dissertation]. University of Minnesota; 2014. Available from: http://hdl.handle.net/11299/163725


Universidade do Rio Grande do Sul

2. Both, Thiago Hanna. Autocorrelation analysis in frequency domain as a tool for MOSFET low frequency noise characterization.

Degree: 2017, Universidade do Rio Grande do Sul

Low-frequency noise (LFN) is a performance limiter for analog, digital and RF circuits, introducing phase noise in oscillators and reducing the stability of SRAM cells,… (more)

Subjects/Keywords: Microeletrônica; 1/f noise; Random Telegraph Noise; Circuitos digitais; MOSFET; Low-frequency noise; CMOS

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APA (6th Edition):

Both, T. H. (2017). Autocorrelation analysis in frequency domain as a tool for MOSFET low frequency noise characterization. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/174487

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Both, Thiago Hanna. “Autocorrelation analysis in frequency domain as a tool for MOSFET low frequency noise characterization.” 2017. Thesis, Universidade do Rio Grande do Sul. Accessed October 29, 2020. http://hdl.handle.net/10183/174487.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Both, Thiago Hanna. “Autocorrelation analysis in frequency domain as a tool for MOSFET low frequency noise characterization.” 2017. Web. 29 Oct 2020.

Vancouver:

Both TH. Autocorrelation analysis in frequency domain as a tool for MOSFET low frequency noise characterization. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2017. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/10183/174487.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Both TH. Autocorrelation analysis in frequency domain as a tool for MOSFET low frequency noise characterization. [Thesis]. Universidade do Rio Grande do Sul; 2017. Available from: http://hdl.handle.net/10183/174487

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

3. Thomas A. Zirkle. Investigation of the Dominant Noise Mechanism in MIM SETs at Low Frequencies</h1>.

Degree: Electrical Engineering, 2017, University of Notre Dame

  Single-Electron Transistors (SETs) are the most sensitive electrometers known to-date (sensitivities of 0.9 μe/Hz½) [1, 2]. Advancement and optimization of SETs are important to… (more)

Subjects/Keywords: Alumina Tunnel Barriers; Random Telegraph Noise; Single Electron Transistors

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APA (6th Edition):

Zirkle, T. A. (2017). Investigation of the Dominant Noise Mechanism in MIM SETs at Low Frequencies</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/g445cc11c8q

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zirkle, Thomas A.. “Investigation of the Dominant Noise Mechanism in MIM SETs at Low Frequencies</h1>.” 2017. Thesis, University of Notre Dame. Accessed October 29, 2020. https://curate.nd.edu/show/g445cc11c8q.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zirkle, Thomas A.. “Investigation of the Dominant Noise Mechanism in MIM SETs at Low Frequencies</h1>.” 2017. Web. 29 Oct 2020.

Vancouver:

Zirkle TA. Investigation of the Dominant Noise Mechanism in MIM SETs at Low Frequencies</h1>. [Internet] [Thesis]. University of Notre Dame; 2017. [cited 2020 Oct 29]. Available from: https://curate.nd.edu/show/g445cc11c8q.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zirkle TA. Investigation of the Dominant Noise Mechanism in MIM SETs at Low Frequencies</h1>. [Thesis]. University of Notre Dame; 2017. Available from: https://curate.nd.edu/show/g445cc11c8q

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Waterloo

4. Malcolm, AJ. Multi-level Random Telegraph Noise Analysis Using Machine Learning Techniques.

Degree: 2020, University of Waterloo

 RTN is a noise process which occurs in solid-state electrical devices such as MOSFETs and Josephson Junctions. Defects in the crystal structure of these devices… (more)

Subjects/Keywords: random telegraph noise; rtn; machine learning; mosfet; cmos

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APA (6th Edition):

Malcolm, A. (2020). Multi-level Random Telegraph Noise Analysis Using Machine Learning Techniques. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/16342

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Malcolm, AJ. “Multi-level Random Telegraph Noise Analysis Using Machine Learning Techniques.” 2020. Thesis, University of Waterloo. Accessed October 29, 2020. http://hdl.handle.net/10012/16342.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Malcolm, AJ. “Multi-level Random Telegraph Noise Analysis Using Machine Learning Techniques.” 2020. Web. 29 Oct 2020.

Vancouver:

Malcolm A. Multi-level Random Telegraph Noise Analysis Using Machine Learning Techniques. [Internet] [Thesis]. University of Waterloo; 2020. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/10012/16342.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Malcolm A. Multi-level Random Telegraph Noise Analysis Using Machine Learning Techniques. [Thesis]. University of Waterloo; 2020. Available from: http://hdl.handle.net/10012/16342

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

5. Bronn, Nicholas. Spectroscopy of correlated nanowires.

Degree: PhD, 0240, 2013, University of Illinois – Urbana-Champaign

 This dissertation is concerned with spectroscopy of correlated nanowires, in particular carbon nanotubes and La2/3Sr{1/3}MnO3 (LSMO) nanowires. The technique of nonequilibrium superconducting tunnel spectroscopy is… (more)

Subjects/Keywords: Nanowires; Nanotubes; Nonequilibrium tunnel spectroscopy; Random telegraph noise; La2/3Sr1/3MnO3 (LSMO)

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APA (6th Edition):

Bronn, N. (2013). Spectroscopy of correlated nanowires. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/44424

Chicago Manual of Style (16th Edition):

Bronn, Nicholas. “Spectroscopy of correlated nanowires.” 2013. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 29, 2020. http://hdl.handle.net/2142/44424.

MLA Handbook (7th Edition):

Bronn, Nicholas. “Spectroscopy of correlated nanowires.” 2013. Web. 29 Oct 2020.

Vancouver:

Bronn N. Spectroscopy of correlated nanowires. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2013. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/2142/44424.

Council of Science Editors:

Bronn N. Spectroscopy of correlated nanowires. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2013. Available from: http://hdl.handle.net/2142/44424


University of Minnesota

6. Tang, Qianying. Design and Characterization Techniques for Reliable and Secure Integrated Circuits.

Degree: PhD, Electrical Engineering, 2017, University of Minnesota

 For the past decades of years, device feature size has continued to shrink for achieving better performance at faster speed, lower power and higher circuit… (more)

Subjects/Keywords: Circuit Reliability; Hardware Security; Physical Unclonable Function; Random Telegraph Noise; Soft Error; True Random Number Generator

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APA (6th Edition):

Tang, Q. (2017). Design and Characterization Techniques for Reliable and Secure Integrated Circuits. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/202431

Chicago Manual of Style (16th Edition):

Tang, Qianying. “Design and Characterization Techniques for Reliable and Secure Integrated Circuits.” 2017. Doctoral Dissertation, University of Minnesota. Accessed October 29, 2020. http://hdl.handle.net/11299/202431.

MLA Handbook (7th Edition):

Tang, Qianying. “Design and Characterization Techniques for Reliable and Secure Integrated Circuits.” 2017. Web. 29 Oct 2020.

Vancouver:

Tang Q. Design and Characterization Techniques for Reliable and Secure Integrated Circuits. [Internet] [Doctoral dissertation]. University of Minnesota; 2017. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/11299/202431.

Council of Science Editors:

Tang Q. Design and Characterization Techniques for Reliable and Secure Integrated Circuits. [Doctoral Dissertation]. University of Minnesota; 2017. Available from: http://hdl.handle.net/11299/202431


University of South Florida

7. Govindaraj, Rekha. Emerging Non-Volatile Memory Technologies for Computing and Security.

Degree: 2018, University of South Florida

 With CMOS technology scaling reaching its limitations rigorous research of alternate and competent technologies is paramount to push the boundaries of computing. Spintronic and resistive… (more)

Subjects/Keywords: Content Addressable Memory; Hardware Security; Magnetic Tunnel Junction; Random Telegraph Noise; Resistive Random Access Memory; Spintronic Memory; Computer Engineering; Computer Sciences

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APA (6th Edition):

Govindaraj, R. (2018). Emerging Non-Volatile Memory Technologies for Computing and Security. (Thesis). University of South Florida. Retrieved from https://scholarcommons.usf.edu/etd/7674

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Govindaraj, Rekha. “Emerging Non-Volatile Memory Technologies for Computing and Security.” 2018. Thesis, University of South Florida. Accessed October 29, 2020. https://scholarcommons.usf.edu/etd/7674.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Govindaraj, Rekha. “Emerging Non-Volatile Memory Technologies for Computing and Security.” 2018. Web. 29 Oct 2020.

Vancouver:

Govindaraj R. Emerging Non-Volatile Memory Technologies for Computing and Security. [Internet] [Thesis]. University of South Florida; 2018. [cited 2020 Oct 29]. Available from: https://scholarcommons.usf.edu/etd/7674.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Govindaraj R. Emerging Non-Volatile Memory Technologies for Computing and Security. [Thesis]. University of South Florida; 2018. Available from: https://scholarcommons.usf.edu/etd/7674

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Arizona State University

8. Ashraf, Nabil Shovon. Comparative Analysis of Simulation of Trap Induced Threshold Voltage Fluctuations for 45 nm Gate Length n-MOSFET and Analytical Model Predictions.

Degree: PhD, Electrical Engineering, 2011, Arizona State University

 In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a… (more)

Subjects/Keywords: Electrical engineering; Ensemble Monte Carlo simulation; Interface trap; On-current fluctuations; Random dopant fluctuations; Random telegraph noise; Threshold voltage fluctuations

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ashraf, N. S. (2011). Comparative Analysis of Simulation of Trap Induced Threshold Voltage Fluctuations for 45 nm Gate Length n-MOSFET and Analytical Model Predictions. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/14271

Chicago Manual of Style (16th Edition):

Ashraf, Nabil Shovon. “Comparative Analysis of Simulation of Trap Induced Threshold Voltage Fluctuations for 45 nm Gate Length n-MOSFET and Analytical Model Predictions.” 2011. Doctoral Dissertation, Arizona State University. Accessed October 29, 2020. http://repository.asu.edu/items/14271.

MLA Handbook (7th Edition):

Ashraf, Nabil Shovon. “Comparative Analysis of Simulation of Trap Induced Threshold Voltage Fluctuations for 45 nm Gate Length n-MOSFET and Analytical Model Predictions.” 2011. Web. 29 Oct 2020.

Vancouver:

Ashraf NS. Comparative Analysis of Simulation of Trap Induced Threshold Voltage Fluctuations for 45 nm Gate Length n-MOSFET and Analytical Model Predictions. [Internet] [Doctoral dissertation]. Arizona State University; 2011. [cited 2020 Oct 29]. Available from: http://repository.asu.edu/items/14271.

Council of Science Editors:

Ashraf NS. Comparative Analysis of Simulation of Trap Induced Threshold Voltage Fluctuations for 45 nm Gate Length n-MOSFET and Analytical Model Predictions. [Doctoral Dissertation]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/14271


Vanderbilt University

9. Gorchichko, Mariia. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.

Degree: MS, Electrical Engineering, 2019, Vanderbilt University

 Due to the advances in manufacturing and enhanced gate control of the transistor channel, FinFETs are commonly used in highly-scaled ICs. The geometry of the… (more)

Subjects/Keywords: FinFET; silicon-on-insulator (SOI); total ionizing dose (TID); low-frequency noise; random telegraph noise (RTN)

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APA (6th Edition):

Gorchichko, M. (2019). Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gorchichko, Mariia. “Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.” 2019. Thesis, Vanderbilt University. Accessed October 29, 2020. http://hdl.handle.net/1803/14529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gorchichko, Mariia. “Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.” 2019. Web. 29 Oct 2020.

Vancouver:

Gorchichko M. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. [Internet] [Thesis]. Vanderbilt University; 2019. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/1803/14529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gorchichko M. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. [Thesis]. Vanderbilt University; 2019. Available from: http://hdl.handle.net/1803/14529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade do Rio Grande do Sul

10. Silva, Maurício Banaszeski da. A physics-based statistical random telegraph noise model.

Degree: 2016, Universidade do Rio Grande do Sul

Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) are performance limiters in many analog and digital circuits. For small area devices, the noise power… (more)

Subjects/Keywords: Flicker noise; Microeletrônica; Halo implants; Mosfet; Low frequency noise (LFN); MOSFETs; Power spectral density (PSD); Random telegraph noise (RTN); Statistical model; Variability

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APA (6th Edition):

Silva, M. B. d. (2016). A physics-based statistical random telegraph noise model. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/150171

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Silva, Maurício Banaszeski da. “A physics-based statistical random telegraph noise model.” 2016. Thesis, Universidade do Rio Grande do Sul. Accessed October 29, 2020. http://hdl.handle.net/10183/150171.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Silva, Maurício Banaszeski da. “A physics-based statistical random telegraph noise model.” 2016. Web. 29 Oct 2020.

Vancouver:

Silva MBd. A physics-based statistical random telegraph noise model. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2016. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/10183/150171.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Silva MBd. A physics-based statistical random telegraph noise model. [Thesis]. Universidade do Rio Grande do Sul; 2016. Available from: http://hdl.handle.net/10183/150171

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Lund

11. Hellenbrand, Markus. Electrical Characterisation of III-V Nanowire MOSFETs.

Degree: 2020, University of Lund

 The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor… (more)

Subjects/Keywords: Other Electrical Engineering, Electronic Engineering, Information Engineering; Nano Technology; MOSFET; TFET; III-V; Nanowire; Hysteresis; Low-Frequency Noise; Random Telegraph Noise; cryogenic; Reliability; Radio Frequency; Small-Signal Model

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APA (6th Edition):

Hellenbrand, M. (2020). Electrical Characterisation of III-V Nanowire MOSFETs. (Doctoral Dissertation). University of Lund. Retrieved from https://lup.lub.lu.se/record/d4a7d9ca-d1b4-4ad0-bbe5-995662d5054a ; https://portal.research.lu.se/ws/files/79575105/Hellenbrand_PhD_Thesis_online.pdf

Chicago Manual of Style (16th Edition):

Hellenbrand, Markus. “Electrical Characterisation of III-V Nanowire MOSFETs.” 2020. Doctoral Dissertation, University of Lund. Accessed October 29, 2020. https://lup.lub.lu.se/record/d4a7d9ca-d1b4-4ad0-bbe5-995662d5054a ; https://portal.research.lu.se/ws/files/79575105/Hellenbrand_PhD_Thesis_online.pdf.

MLA Handbook (7th Edition):

Hellenbrand, Markus. “Electrical Characterisation of III-V Nanowire MOSFETs.” 2020. Web. 29 Oct 2020.

Vancouver:

Hellenbrand M. Electrical Characterisation of III-V Nanowire MOSFETs. [Internet] [Doctoral dissertation]. University of Lund; 2020. [cited 2020 Oct 29]. Available from: https://lup.lub.lu.se/record/d4a7d9ca-d1b4-4ad0-bbe5-995662d5054a ; https://portal.research.lu.se/ws/files/79575105/Hellenbrand_PhD_Thesis_online.pdf.

Council of Science Editors:

Hellenbrand M. Electrical Characterisation of III-V Nanowire MOSFETs. [Doctoral Dissertation]. University of Lund; 2020. Available from: https://lup.lub.lu.se/record/d4a7d9ca-d1b4-4ad0-bbe5-995662d5054a ; https://portal.research.lu.se/ws/files/79575105/Hellenbrand_PhD_Thesis_online.pdf


Penn State University

12. Zhu, Meng. ELECTRICAL TRANSPORT STUDIES OF MOLECULAR BEAM EPITAXY GROWN (GA,MN)AS EPILAYERS AND HETEROSTRUCTURES .

Degree: 2008, Penn State University

 Diluted magnetic semiconductors (DMS) grown by molecular beam epitaxy have been drawing attention in the context of emerging spintronics, which utilizes electron spins to develop… (more)

Subjects/Keywords: random telegraph noise; Molecular beam epitaxy; Mn)As; (Ga; Diluted magnetic semiconductor; exchange biasing; tunneling magnetoresistance

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APA (6th Edition):

Zhu, M. (2008). ELECTRICAL TRANSPORT STUDIES OF MOLECULAR BEAM EPITAXY GROWN (GA,MN)AS EPILAYERS AND HETEROSTRUCTURES . (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/8870

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhu, Meng. “ELECTRICAL TRANSPORT STUDIES OF MOLECULAR BEAM EPITAXY GROWN (GA,MN)AS EPILAYERS AND HETEROSTRUCTURES .” 2008. Thesis, Penn State University. Accessed October 29, 2020. https://submit-etda.libraries.psu.edu/catalog/8870.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhu, Meng. “ELECTRICAL TRANSPORT STUDIES OF MOLECULAR BEAM EPITAXY GROWN (GA,MN)AS EPILAYERS AND HETEROSTRUCTURES .” 2008. Web. 29 Oct 2020.

Vancouver:

Zhu M. ELECTRICAL TRANSPORT STUDIES OF MOLECULAR BEAM EPITAXY GROWN (GA,MN)AS EPILAYERS AND HETEROSTRUCTURES . [Internet] [Thesis]. Penn State University; 2008. [cited 2020 Oct 29]. Available from: https://submit-etda.libraries.psu.edu/catalog/8870.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhu M. ELECTRICAL TRANSPORT STUDIES OF MOLECULAR BEAM EPITAXY GROWN (GA,MN)AS EPILAYERS AND HETEROSTRUCTURES . [Thesis]. Penn State University; 2008. Available from: https://submit-etda.libraries.psu.edu/catalog/8870

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.