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Virginia Tech

1. Watt, Grace R. Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module.

Degree: MS, Electrical Engineering, 2020, Virginia Tech

This paper describes the design, construction, and testing of advanced power devices for use in electric vehicles. Power devices are necessary to supply electricity to different parts of the vehicle; for example, energy is stored in a battery as direct current (DC) power, but the motor requires alternating current (AC) power. Therefore, power electronics can alter the energy to be delivered as DC or AC. In order to carry more power, multiple devices can be used together just as 10 people can carry more weight than 1 person. However, because the devices are not perfect, there can be slight differences in the performance of one device to another. One device may have to carry more current than another device which could cause failure earlier than intended. In this research project, multiple power devices were placed into a package, or "module." In a control module, the devices were selected with similar properties to one another. In an experimental module, the devices were selected with properties very different from one another. It was determined that the when the devices were 17.7% difference, there was 119.9 µJ more energy loss and it was 22.2°C hotter than when the difference was only 0.6%. However, the severity of the difference was dependent on how multiple device characteristics interacted with one another. It may be possible to compensate some of the impact of device differences in one characteristic with opposing differences in another device characteristic. Advisors/Committee Members: Burgos, Rolando (committeechair), Lu, Guo Quan (committee member), Dimarino, Christina Marie (committee member), Ngo, Khai D. (committee member).

Subjects/Keywords: SiC MOSFET; power module packaging; flexible PCB; current sharing; symmetrical direct bonded copper (DBC) layout; diode-less module; multi-chip module; device parametric tolerances; package parasitics; vertical GaN

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Watt, G. R. (2020). Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/96559

Chicago Manual of Style (16th Edition):

Watt, Grace R. “Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module.” 2020. Masters Thesis, Virginia Tech. Accessed January 26, 2021. http://hdl.handle.net/10919/96559.

MLA Handbook (7th Edition):

Watt, Grace R. “Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module.” 2020. Web. 26 Jan 2021.

Vancouver:

Watt GR. Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module. [Internet] [Masters thesis]. Virginia Tech; 2020. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/10919/96559.

Council of Science Editors:

Watt GR. Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module. [Masters Thesis]. Virginia Tech; 2020. Available from: http://hdl.handle.net/10919/96559

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