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You searched for subject:(p Type transparent oxide semiconductors). Showing records 1 – 30 of 26982 total matches.

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1. Sanal, K C. Development of p-type transparent semiconducting oxides for thin film transistor applications.

Degree: Physics, 2014, Cochin University of Science and Technology

 <p>Semiconductor physics has developed significantly in the field of re- search and industry in the past few decades due to it’s numerous practical applications. One… (more)

Subjects/Keywords: transparent conducting oxides; Amorphous semiconductors; p-Type transparent oxide semiconductors; thin film transistors; transparent p-SnO/n-ZnO pn heterojunction

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Sanal, K. C. (2014). Development of p-type transparent semiconducting oxides for thin film transistor applications. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/3991

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sanal, K C. “Development of p-type transparent semiconducting oxides for thin film transistor applications.” 2014. Thesis, Cochin University of Science and Technology. Accessed April 04, 2020. http://dyuthi.cusat.ac.in/purl/3991.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sanal, K C. “Development of p-type transparent semiconducting oxides for thin film transistor applications.” 2014. Web. 04 Apr 2020.

Vancouver:

Sanal KC. Development of p-type transparent semiconducting oxides for thin film transistor applications. [Internet] [Thesis]. Cochin University of Science and Technology; 2014. [cited 2020 Apr 04]. Available from: http://dyuthi.cusat.ac.in/purl/3991.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sanal KC. Development of p-type transparent semiconducting oxides for thin film transistor applications. [Thesis]. Cochin University of Science and Technology; 2014. Available from: http://dyuthi.cusat.ac.in/purl/3991

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Loughborough University

2. Isherwood, Patrick J. M. Development of transparent conducting oxides for photovoltaic applications.

Degree: PhD, 2015, Loughborough University

 Metal oxides are a very important class of materials with a wide range of photovoltaic applications. Transparent conducting oxides (TCOs) are the primary front contact… (more)

Subjects/Keywords: 661; Transparent conducting oxides; P-type TCOs; Cupric oxide

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APA (6th Edition):

Isherwood, P. J. M. (2015). Development of transparent conducting oxides for photovoltaic applications. (Doctoral Dissertation). Loughborough University. Retrieved from https://dspace.lboro.ac.uk/2134/18886 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.668523

Chicago Manual of Style (16th Edition):

Isherwood, Patrick J M. “Development of transparent conducting oxides for photovoltaic applications.” 2015. Doctoral Dissertation, Loughborough University. Accessed April 04, 2020. https://dspace.lboro.ac.uk/2134/18886 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.668523.

MLA Handbook (7th Edition):

Isherwood, Patrick J M. “Development of transparent conducting oxides for photovoltaic applications.” 2015. Web. 04 Apr 2020.

Vancouver:

Isherwood PJM. Development of transparent conducting oxides for photovoltaic applications. [Internet] [Doctoral dissertation]. Loughborough University; 2015. [cited 2020 Apr 04]. Available from: https://dspace.lboro.ac.uk/2134/18886 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.668523.

Council of Science Editors:

Isherwood PJM. Development of transparent conducting oxides for photovoltaic applications. [Doctoral Dissertation]. Loughborough University; 2015. Available from: https://dspace.lboro.ac.uk/2134/18886 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.668523


Loughborough University

3. Isherwood, Patrick J. M. Development of transparent conducting oxides for photovoltaic applications.

Degree: PhD, 2015, Loughborough University

 Metal oxides are a very important class of materials with a wide range of photovoltaic applications. Transparent conducting oxides (TCOs) are the primary front contact… (more)

Subjects/Keywords: 661; Transparent conducting oxides; P-type TCOs; Cupric oxide

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APA (6th Edition):

Isherwood, P. J. M. (2015). Development of transparent conducting oxides for photovoltaic applications. (Doctoral Dissertation). Loughborough University. Retrieved from http://hdl.handle.net/2134/18886

Chicago Manual of Style (16th Edition):

Isherwood, Patrick J M. “Development of transparent conducting oxides for photovoltaic applications.” 2015. Doctoral Dissertation, Loughborough University. Accessed April 04, 2020. http://hdl.handle.net/2134/18886.

MLA Handbook (7th Edition):

Isherwood, Patrick J M. “Development of transparent conducting oxides for photovoltaic applications.” 2015. Web. 04 Apr 2020.

Vancouver:

Isherwood PJM. Development of transparent conducting oxides for photovoltaic applications. [Internet] [Doctoral dissertation]. Loughborough University; 2015. [cited 2020 Apr 04]. Available from: http://hdl.handle.net/2134/18886.

Council of Science Editors:

Isherwood PJM. Development of transparent conducting oxides for photovoltaic applications. [Doctoral Dissertation]. Loughborough University; 2015. Available from: http://hdl.handle.net/2134/18886

4. MULLARKEY, DARAGH. Utilising Chromium-Based p-Type Transparent Conducting Oxides in Photovoltaic Devices.

Degree: School of Physics. Discipline of Physics, 2018, Trinity College Dublin

 This thesis deals with the growth of modern, highly performing p-type transparent conducting oxides and their utilisation in two types of photovoltaic devices. X-ray spectroscopic… (more)

Subjects/Keywords: p-Type; photovoltaic; Chromium Oxide; Molecular Beam Epitaxy; Spray Pyrolysis; Band Alignment; Transparent Conducting Oxides

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APA (6th Edition):

MULLARKEY, D. (2018). Utilising Chromium-Based p-Type Transparent Conducting Oxides in Photovoltaic Devices. (Thesis). Trinity College Dublin. Retrieved from http://hdl.handle.net/2262/83110

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

MULLARKEY, DARAGH. “Utilising Chromium-Based p-Type Transparent Conducting Oxides in Photovoltaic Devices.” 2018. Thesis, Trinity College Dublin. Accessed April 04, 2020. http://hdl.handle.net/2262/83110.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

MULLARKEY, DARAGH. “Utilising Chromium-Based p-Type Transparent Conducting Oxides in Photovoltaic Devices.” 2018. Web. 04 Apr 2020.

Vancouver:

MULLARKEY D. Utilising Chromium-Based p-Type Transparent Conducting Oxides in Photovoltaic Devices. [Internet] [Thesis]. Trinity College Dublin; 2018. [cited 2020 Apr 04]. Available from: http://hdl.handle.net/2262/83110.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

MULLARKEY D. Utilising Chromium-Based p-Type Transparent Conducting Oxides in Photovoltaic Devices. [Thesis]. Trinity College Dublin; 2018. Available from: http://hdl.handle.net/2262/83110

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

5. Bergerot, Laurent. Etude de l'élaboration d'oxyde transparent conducteur de type-p en couches minces pour des applications à l'électronique transparente ou au photovoltaïque : Study of the growth of p-type transparent conducting oxides thin films for transparent electronic or photovoltaic applications.

Degree: Docteur es, Matériaux, mécanique, génie civil, électrochimie, 2015, Grenoble Alpes

 L'électronique transparente est actuellement limitée par la difficulté de construire une jonction p-n transparente, en raison du manque d'oxyde transparent conducteur (TCO) de type p(more)

Subjects/Keywords: Couche mince; CVD; Oxyde transparent conducteur; Semi-conducteur type p; Cu2O; Thin film; CVD; Transparent conducting oxide; P-type semi-conductor; Cu2O; 620

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APA (6th Edition):

Bergerot, L. (2015). Etude de l'élaboration d'oxyde transparent conducteur de type-p en couches minces pour des applications à l'électronique transparente ou au photovoltaïque : Study of the growth of p-type transparent conducting oxides thin films for transparent electronic or photovoltaic applications. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAI003

Chicago Manual of Style (16th Edition):

Bergerot, Laurent. “Etude de l'élaboration d'oxyde transparent conducteur de type-p en couches minces pour des applications à l'électronique transparente ou au photovoltaïque : Study of the growth of p-type transparent conducting oxides thin films for transparent electronic or photovoltaic applications.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed April 04, 2020. http://www.theses.fr/2015GREAI003.

MLA Handbook (7th Edition):

Bergerot, Laurent. “Etude de l'élaboration d'oxyde transparent conducteur de type-p en couches minces pour des applications à l'électronique transparente ou au photovoltaïque : Study of the growth of p-type transparent conducting oxides thin films for transparent electronic or photovoltaic applications.” 2015. Web. 04 Apr 2020.

Vancouver:

Bergerot L. Etude de l'élaboration d'oxyde transparent conducteur de type-p en couches minces pour des applications à l'électronique transparente ou au photovoltaïque : Study of the growth of p-type transparent conducting oxides thin films for transparent electronic or photovoltaic applications. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2020 Apr 04]. Available from: http://www.theses.fr/2015GREAI003.

Council of Science Editors:

Bergerot L. Etude de l'élaboration d'oxyde transparent conducteur de type-p en couches minces pour des applications à l'électronique transparente ou au photovoltaïque : Study of the growth of p-type transparent conducting oxides thin films for transparent electronic or photovoltaic applications. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAI003


NSYSU

6. Shih, Cheng-Hung. Fabrication and characterization of p-type transparent conducting oxide CuAlO2 thin film.

Degree: PhD, Materials Science and Engineering, 2007, NSYSU

 In this thesis, we investigate the synthesis of CuAlO2 on sapphire (0001) substrate by rapid thermal annealing of an Al2O3/Cu2O/sapphire structure above 1000 °C. We… (more)

Subjects/Keywords: thin film reaction; CuAlO2; p-type transparent conducting oxide

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APA (6th Edition):

Shih, C. (2007). Fabrication and characterization of p-type transparent conducting oxide CuAlO2 thin film. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008107-182140

Chicago Manual of Style (16th Edition):

Shih, Cheng-Hung. “Fabrication and characterization of p-type transparent conducting oxide CuAlO2 thin film.” 2007. Doctoral Dissertation, NSYSU. Accessed April 04, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008107-182140.

MLA Handbook (7th Edition):

Shih, Cheng-Hung. “Fabrication and characterization of p-type transparent conducting oxide CuAlO2 thin film.” 2007. Web. 04 Apr 2020.

Vancouver:

Shih C. Fabrication and characterization of p-type transparent conducting oxide CuAlO2 thin film. [Internet] [Doctoral dissertation]. NSYSU; 2007. [cited 2020 Apr 04]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008107-182140.

Council of Science Editors:

Shih C. Fabrication and characterization of p-type transparent conducting oxide CuAlO2 thin film. [Doctoral Dissertation]. NSYSU; 2007. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008107-182140

7. ONG CHIN HOCK. A study of transparent P-type semiconducting oxide Cu-Al-O.

Degree: 2004, National University of Singapore

Subjects/Keywords: P-type; Transparent; Semiconducting Oxide; Cu-Al-O

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APA (6th Edition):

HOCK, O. C. (2004). A study of transparent P-type semiconducting oxide Cu-Al-O. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/27725

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

HOCK, ONG CHIN. “A study of transparent P-type semiconducting oxide Cu-Al-O.” 2004. Thesis, National University of Singapore. Accessed April 04, 2020. http://scholarbank.nus.edu.sg/handle/10635/27725.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

HOCK, ONG CHIN. “A study of transparent P-type semiconducting oxide Cu-Al-O.” 2004. Web. 04 Apr 2020.

Vancouver:

HOCK OC. A study of transparent P-type semiconducting oxide Cu-Al-O. [Internet] [Thesis]. National University of Singapore; 2004. [cited 2020 Apr 04]. Available from: http://scholarbank.nus.edu.sg/handle/10635/27725.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

HOCK OC. A study of transparent P-type semiconducting oxide Cu-Al-O. [Thesis]. National University of Singapore; 2004. Available from: http://scholarbank.nus.edu.sg/handle/10635/27725

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of North Texas

8. Haynes, Keith M. Molecules and Materials for Excitonic Solar Cells Using P-type Metal Oxide Semiconductors.

Degree: 2015, University of North Texas

 This dissertation has two intersecting foci; firstly, the discovery of a new methodology for the growth of high surface area cuprous oxide (Cu2O) substrates. Secondly,… (more)

Subjects/Keywords: dye- sensitized; solar; DSC; p-type; excitonic; organic; chemistry; Solar cells.; Metal oxide semiconductors.; Zinc oxide thin films.

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APA (6th Edition):

Haynes, K. M. (2015). Molecules and Materials for Excitonic Solar Cells Using P-type Metal Oxide Semiconductors. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc804970/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Haynes, Keith M. “Molecules and Materials for Excitonic Solar Cells Using P-type Metal Oxide Semiconductors.” 2015. Thesis, University of North Texas. Accessed April 04, 2020. https://digital.library.unt.edu/ark:/67531/metadc804970/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Haynes, Keith M. “Molecules and Materials for Excitonic Solar Cells Using P-type Metal Oxide Semiconductors.” 2015. Web. 04 Apr 2020.

Vancouver:

Haynes KM. Molecules and Materials for Excitonic Solar Cells Using P-type Metal Oxide Semiconductors. [Internet] [Thesis]. University of North Texas; 2015. [cited 2020 Apr 04]. Available from: https://digital.library.unt.edu/ark:/67531/metadc804970/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Haynes KM. Molecules and Materials for Excitonic Solar Cells Using P-type Metal Oxide Semiconductors. [Thesis]. University of North Texas; 2015. Available from: https://digital.library.unt.edu/ark:/67531/metadc804970/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

9. Ajayan, K R. Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology.

Degree: 2014, Indian Institute of Science

 Process variability is a major challenge for the design of nano scale MOSFETs due to fundamental physical limits as well as process control limitations. As… (more)

Subjects/Keywords: Metal Oxide Semiconductors (MOS); Digital Integrated Circuits; Complementary Metal Oxide Semiconductors (CMOS); N-type Metal-Oxide Semiconductors (NMOS); P-type Metal-Oxide Semiconductors (PMOS); Metal Oxode Semiconductor Device Modeling; Look Up Table Model (LUT); Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET); MOSFET Models; BSIM Models; Variability Aware Device Modeling; Integrated Circuit Modeling; Circuit Design; 45nm Analog CMOS Technology; Electrical Communication Engineering

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APA (6th Edition):

Ajayan, K. R. (2014). Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ajayan, K R. “Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology.” 2014. Thesis, Indian Institute of Science. Accessed April 04, 2020. http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ajayan, K R. “Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology.” 2014. Web. 04 Apr 2020.

Vancouver:

Ajayan KR. Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology. [Internet] [Thesis]. Indian Institute of Science; 2014. [cited 2020 Apr 04]. Available from: http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ajayan KR. Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology. [Thesis]. Indian Institute of Science; 2014. Available from: http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Lehigh University

10. Qin, Ying. Hydrogen Centers in Semiconductor Oxides In2O3 and Ga2O3 Studied by FTIR Spectroscopy.

Degree: PhD, Physics, 2019, Lehigh University

 Hydrogen is found to be an n-type dopant in In2O3 that gives rise to unintentional conductivity. An infrared (IR) absorption line observed at 3306 cm−1… (more)

Subjects/Keywords: Defects; FTIR spectroscopy; Galium Oxide; Hydrogen; Semiconductors; Transparent Conducting Oxides; Physics

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APA (6th Edition):

Qin, Y. (2019). Hydrogen Centers in Semiconductor Oxides In2O3 and Ga2O3 Studied by FTIR Spectroscopy. (Doctoral Dissertation). Lehigh University. Retrieved from https://preserve.lehigh.edu/etd/5614

Chicago Manual of Style (16th Edition):

Qin, Ying. “Hydrogen Centers in Semiconductor Oxides In2O3 and Ga2O3 Studied by FTIR Spectroscopy.” 2019. Doctoral Dissertation, Lehigh University. Accessed April 04, 2020. https://preserve.lehigh.edu/etd/5614.

MLA Handbook (7th Edition):

Qin, Ying. “Hydrogen Centers in Semiconductor Oxides In2O3 and Ga2O3 Studied by FTIR Spectroscopy.” 2019. Web. 04 Apr 2020.

Vancouver:

Qin Y. Hydrogen Centers in Semiconductor Oxides In2O3 and Ga2O3 Studied by FTIR Spectroscopy. [Internet] [Doctoral dissertation]. Lehigh University; 2019. [cited 2020 Apr 04]. Available from: https://preserve.lehigh.edu/etd/5614.

Council of Science Editors:

Qin Y. Hydrogen Centers in Semiconductor Oxides In2O3 and Ga2O3 Studied by FTIR Spectroscopy. [Doctoral Dissertation]. Lehigh University; 2019. Available from: https://preserve.lehigh.edu/etd/5614


University of Oregon

11. Erslev, Peter Tweedie, 1979-. The electronic structure within the mobility gap of transparent amorphous oxide semiconductors.

Degree: 2010, University of Oregon

Transparent amorphous oxide semiconductors are a relatively new class of materials which show significant promise for electronic device applications. The electron mobility in these materials… (more)

Subjects/Keywords: Electronic structure; Mobility gap; Amorphous oxide semiconductors; Transparent electronics; Solid state physics

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APA (6th Edition):

Erslev, Peter Tweedie, 1. (2010). The electronic structure within the mobility gap of transparent amorphous oxide semiconductors. (Thesis). University of Oregon. Retrieved from http://hdl.handle.net/1794/10566

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Erslev, Peter Tweedie, 1979-. “The electronic structure within the mobility gap of transparent amorphous oxide semiconductors.” 2010. Thesis, University of Oregon. Accessed April 04, 2020. http://hdl.handle.net/1794/10566.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Erslev, Peter Tweedie, 1979-. “The electronic structure within the mobility gap of transparent amorphous oxide semiconductors.” 2010. Web. 04 Apr 2020.

Vancouver:

Erslev, Peter Tweedie 1. The electronic structure within the mobility gap of transparent amorphous oxide semiconductors. [Internet] [Thesis]. University of Oregon; 2010. [cited 2020 Apr 04]. Available from: http://hdl.handle.net/1794/10566.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Erslev, Peter Tweedie 1. The electronic structure within the mobility gap of transparent amorphous oxide semiconductors. [Thesis]. University of Oregon; 2010. Available from: http://hdl.handle.net/1794/10566

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

12. Khan, Afzal. Synthèse de Cuprates de Strontium (SrCu2O) par MOCVD comme couche mince d'oxyde transparent conducteur de type P : Synthesis of Strontium Cuprate (SrCu2O) by MOCVD as a P-type Transparent Conducting Oxide Thin Film.

Degree: Docteur es, Matériaux, mécanique, génie civil, électrochimie, 2011, Université de Grenoble

 <p>Les semi-conducteurs transparents de type oxyde, communément appelés TCO (Transparent Conducting Oxides) sont utilisés comme électrodes transparentes dans des nombreux d'applications telles que les cellules… (more)

Subjects/Keywords: Oxyde transparent conducteur; Couches minces; Conductivité de type P; Mocvd; Tco; Thin film; P-type conductivity; Mocvd; 620

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APA (6th Edition):

Khan, A. (2011). Synthèse de Cuprates de Strontium (SrCu2O) par MOCVD comme couche mince d'oxyde transparent conducteur de type P : Synthesis of Strontium Cuprate (SrCu2O) by MOCVD as a P-type Transparent Conducting Oxide Thin Film. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENI008

Chicago Manual of Style (16th Edition):

Khan, Afzal. “Synthèse de Cuprates de Strontium (SrCu2O) par MOCVD comme couche mince d'oxyde transparent conducteur de type P : Synthesis of Strontium Cuprate (SrCu2O) by MOCVD as a P-type Transparent Conducting Oxide Thin Film.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed April 04, 2020. http://www.theses.fr/2011GRENI008.

MLA Handbook (7th Edition):

Khan, Afzal. “Synthèse de Cuprates de Strontium (SrCu2O) par MOCVD comme couche mince d'oxyde transparent conducteur de type P : Synthesis of Strontium Cuprate (SrCu2O) by MOCVD as a P-type Transparent Conducting Oxide Thin Film.” 2011. Web. 04 Apr 2020.

Vancouver:

Khan A. Synthèse de Cuprates de Strontium (SrCu2O) par MOCVD comme couche mince d'oxyde transparent conducteur de type P : Synthesis of Strontium Cuprate (SrCu2O) by MOCVD as a P-type Transparent Conducting Oxide Thin Film. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2020 Apr 04]. Available from: http://www.theses.fr/2011GRENI008.

Council of Science Editors:

Khan A. Synthèse de Cuprates de Strontium (SrCu2O) par MOCVD comme couche mince d'oxyde transparent conducteur de type P : Synthesis of Strontium Cuprate (SrCu2O) by MOCVD as a P-type Transparent Conducting Oxide Thin Film. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENI008


North Carolina State University

13. Suresh, Arun. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics.

Degree: PhD, Electrical Engineering, 2010, North Carolina State University

 The ability to make electronic devices, that are transparent to visible and near infrared wavelength, is a relatively new field of research in the development… (more)

Subjects/Keywords: Amorphous oxide semiconductors; thin-film transistors; TFT; IGZO; Indium gallium zinc oxide; transparent circuits; bias stability; ring oscillator; non-volatile memory

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APA (6th Edition):

Suresh, A. (2010). Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/6157

Chicago Manual of Style (16th Edition):

Suresh, Arun. “Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics.” 2010. Doctoral Dissertation, North Carolina State University. Accessed April 04, 2020. http://www.lib.ncsu.edu/resolver/1840.16/6157.

MLA Handbook (7th Edition):

Suresh, Arun. “Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics.” 2010. Web. 04 Apr 2020.

Vancouver:

Suresh A. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics. [Internet] [Doctoral dissertation]. North Carolina State University; 2010. [cited 2020 Apr 04]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6157.

Council of Science Editors:

Suresh A. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics. [Doctoral Dissertation]. North Carolina State University; 2010. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6157

14. Le, Thi Ly. Preparation of transition metal oxide thin films used as solar absorbers : Préparation de couches minces d'oxydes de métaux de transition utilisées comme absorbeurs solaires.

Degree: Docteur es, Sciences et génie des matériaux, 2016, Université Toulouse III – Paul Sabatier

 Ce travail de thèse a porté sur l'élaboration de nanoparticules et de couches minces d'oxydes spinelles mixtes de MxCo2-xMnO4 (M = Ni, Cu, Zn ;… (more)

Subjects/Keywords: Semi-conducteurs type p; Absorbant de lumière; MxCo2-xMnO4 (M = Ni, Cu, Zn, x = 0,0,15, 0,30, 0,60); Conduction; Propriétés optique; Photo-catalyse; Photovoltaïque; P-type semiconductors; Light absorbers; Spinel oxide MxCo2-xMnO4 (M = Ni, Cu, Zn, x = 0,0,15, 0,30, 0,60); Conduction; Optical properties; Photo-catalysis; Photovoltaic

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APA (6th Edition):

Le, T. L. (2016). Preparation of transition metal oxide thin films used as solar absorbers : Préparation de couches minces d'oxydes de métaux de transition utilisées comme absorbeurs solaires. (Doctoral Dissertation). Université Toulouse III – Paul Sabatier. Retrieved from http://www.theses.fr/2016TOU30120

Chicago Manual of Style (16th Edition):

Le, Thi Ly. “Preparation of transition metal oxide thin films used as solar absorbers : Préparation de couches minces d'oxydes de métaux de transition utilisées comme absorbeurs solaires.” 2016. Doctoral Dissertation, Université Toulouse III – Paul Sabatier. Accessed April 04, 2020. http://www.theses.fr/2016TOU30120.

MLA Handbook (7th Edition):

Le, Thi Ly. “Preparation of transition metal oxide thin films used as solar absorbers : Préparation de couches minces d'oxydes de métaux de transition utilisées comme absorbeurs solaires.” 2016. Web. 04 Apr 2020.

Vancouver:

Le TL. Preparation of transition metal oxide thin films used as solar absorbers : Préparation de couches minces d'oxydes de métaux de transition utilisées comme absorbeurs solaires. [Internet] [Doctoral dissertation]. Université Toulouse III – Paul Sabatier; 2016. [cited 2020 Apr 04]. Available from: http://www.theses.fr/2016TOU30120.

Council of Science Editors:

Le TL. Preparation of transition metal oxide thin films used as solar absorbers : Préparation de couches minces d'oxydes de métaux de transition utilisées comme absorbeurs solaires. [Doctoral Dissertation]. Université Toulouse III – Paul Sabatier; 2016. Available from: http://www.theses.fr/2016TOU30120


Oregon State University

15. Park, Cheol-Hee. Synthesis and study of transparent p- and n-type semiconductors and luminescent materials.

Degree: PhD, Chemistry, 2005, Oregon State University

 New transparent p- and n-type semiconductors and luminescent materials have been prepared and characterized. Synthesis, structures, optical and electrical properties of new chalcogenide fluoride p-type(more)

Subjects/Keywords: Transparent semiconductors

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APA (6th Edition):

Park, C. (2005). Synthesis and study of transparent p- and n-type semiconductors and luminescent materials. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/29433

Chicago Manual of Style (16th Edition):

Park, Cheol-Hee. “Synthesis and study of transparent p- and n-type semiconductors and luminescent materials.” 2005. Doctoral Dissertation, Oregon State University. Accessed April 04, 2020. http://hdl.handle.net/1957/29433.

MLA Handbook (7th Edition):

Park, Cheol-Hee. “Synthesis and study of transparent p- and n-type semiconductors and luminescent materials.” 2005. Web. 04 Apr 2020.

Vancouver:

Park C. Synthesis and study of transparent p- and n-type semiconductors and luminescent materials. [Internet] [Doctoral dissertation]. Oregon State University; 2005. [cited 2020 Apr 04]. Available from: http://hdl.handle.net/1957/29433.

Council of Science Editors:

Park C. Synthesis and study of transparent p- and n-type semiconductors and luminescent materials. [Doctoral Dissertation]. Oregon State University; 2005. Available from: http://hdl.handle.net/1957/29433


Oregon State University

16. Valencia, Melinda Marie. p-type transparent electronics.

Degree: MS, Electrical and Computer Engineering, 2003, Oregon State University

 The objective of this thesis is to contribute to the development of p-type materials for transparent electronics applications. Thin films of ®-BaCu2S2, a p-type semi-transparent(more)

Subjects/Keywords: Transparent semiconductors

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APA (6th Edition):

Valencia, M. M. (2003). p-type transparent electronics. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/10293

Chicago Manual of Style (16th Edition):

Valencia, Melinda Marie. “p-type transparent electronics.” 2003. Masters Thesis, Oregon State University. Accessed April 04, 2020. http://hdl.handle.net/1957/10293.

MLA Handbook (7th Edition):

Valencia, Melinda Marie. “p-type transparent electronics.” 2003. Web. 04 Apr 2020.

Vancouver:

Valencia MM. p-type transparent electronics. [Internet] [Masters thesis]. Oregon State University; 2003. [cited 2020 Apr 04]. Available from: http://hdl.handle.net/1957/10293.

Council of Science Editors:

Valencia MM. p-type transparent electronics. [Masters Thesis]. Oregon State University; 2003. Available from: http://hdl.handle.net/1957/10293


Oregon State University

17. Kykyneshi, Robert. Transport properties of CuSc₁₋(subscript x)Mg(subscript x)O₂₊(subscript y) and BaCu₂S₂ transparent semiconductors.

Degree: MS, Physics, 2004, Oregon State University

Subjects/Keywords: Transparent semiconductors

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APA (6th Edition):

Kykyneshi, R. (2004). Transport properties of CuSc₁₋(subscript x)Mg(subscript x)O₂₊(subscript y) and BaCu₂S₂ transparent semiconductors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/22830

Chicago Manual of Style (16th Edition):

Kykyneshi, Robert. “Transport properties of CuSc₁₋(subscript x)Mg(subscript x)O₂₊(subscript y) and BaCu₂S₂ transparent semiconductors.” 2004. Masters Thesis, Oregon State University. Accessed April 04, 2020. http://hdl.handle.net/1957/22830.

MLA Handbook (7th Edition):

Kykyneshi, Robert. “Transport properties of CuSc₁₋(subscript x)Mg(subscript x)O₂₊(subscript y) and BaCu₂S₂ transparent semiconductors.” 2004. Web. 04 Apr 2020.

Vancouver:

Kykyneshi R. Transport properties of CuSc₁₋(subscript x)Mg(subscript x)O₂₊(subscript y) and BaCu₂S₂ transparent semiconductors. [Internet] [Masters thesis]. Oregon State University; 2004. [cited 2020 Apr 04]. Available from: http://hdl.handle.net/1957/22830.

Council of Science Editors:

Kykyneshi R. Transport properties of CuSc₁₋(subscript x)Mg(subscript x)O₂₊(subscript y) and BaCu₂S₂ transparent semiconductors. [Masters Thesis]. Oregon State University; 2004. Available from: http://hdl.handle.net/1957/22830


Duquesne University

18. Ingler, William B., Jr. Synthesis of p-Fe2O3, n-Fe2O3, and Carbon-Modified (CM)-n-TiO2 and Their Application in Self-Driven Photoelectrochemical Cells: p-Fe2O3/n-Fe2O3, p-Fe2O3/CM-n-TiO2, and p-GaInP2/CM-n-TiO2 For Direct Water Photoelectrolysis.

Degree: PhD, Chemistry and Biochemistry, 2005, Duquesne University

  My Ph.D. Dissertation describes (1) the influence of metal dopants on the spray pyrolytic synthesis of p-type and n-type iron(III) oxide thin film semiconductors,… (more)

Subjects/Keywords: semiconductors; self-driven photoelectrochemical cells (PEC); p-type iron(III) oxide; carbon-modified n-type titanium dioxide; hydrogen generation

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APA (6th Edition):

Ingler, William B., J. (2005). Synthesis of p-Fe2O3, n-Fe2O3, and Carbon-Modified (CM)-n-TiO2 and Their Application in Self-Driven Photoelectrochemical Cells: p-Fe2O3/n-Fe2O3, p-Fe2O3/CM-n-TiO2, and p-GaInP2/CM-n-TiO2 For Direct Water Photoelectrolysis. (Doctoral Dissertation). Duquesne University. Retrieved from https://dsc.duq.edu/etd/679

Chicago Manual of Style (16th Edition):

Ingler, William B., Jr. “Synthesis of p-Fe2O3, n-Fe2O3, and Carbon-Modified (CM)-n-TiO2 and Their Application in Self-Driven Photoelectrochemical Cells: p-Fe2O3/n-Fe2O3, p-Fe2O3/CM-n-TiO2, and p-GaInP2/CM-n-TiO2 For Direct Water Photoelectrolysis.” 2005. Doctoral Dissertation, Duquesne University. Accessed April 04, 2020. https://dsc.duq.edu/etd/679.

MLA Handbook (7th Edition):

Ingler, William B., Jr. “Synthesis of p-Fe2O3, n-Fe2O3, and Carbon-Modified (CM)-n-TiO2 and Their Application in Self-Driven Photoelectrochemical Cells: p-Fe2O3/n-Fe2O3, p-Fe2O3/CM-n-TiO2, and p-GaInP2/CM-n-TiO2 For Direct Water Photoelectrolysis.” 2005. Web. 04 Apr 2020.

Vancouver:

Ingler, William B. J. Synthesis of p-Fe2O3, n-Fe2O3, and Carbon-Modified (CM)-n-TiO2 and Their Application in Self-Driven Photoelectrochemical Cells: p-Fe2O3/n-Fe2O3, p-Fe2O3/CM-n-TiO2, and p-GaInP2/CM-n-TiO2 For Direct Water Photoelectrolysis. [Internet] [Doctoral dissertation]. Duquesne University; 2005. [cited 2020 Apr 04]. Available from: https://dsc.duq.edu/etd/679.

Council of Science Editors:

Ingler, William B. J. Synthesis of p-Fe2O3, n-Fe2O3, and Carbon-Modified (CM)-n-TiO2 and Their Application in Self-Driven Photoelectrochemical Cells: p-Fe2O3/n-Fe2O3, p-Fe2O3/CM-n-TiO2, and p-GaInP2/CM-n-TiO2 For Direct Water Photoelectrolysis. [Doctoral Dissertation]. Duquesne University; 2005. Available from: https://dsc.duq.edu/etd/679

19. Le Boulbar, Emmanuel. Croissance par ablation laser pulsé de nouvelles phases d'oxyde de titane pour l'électronique transparente et la conversion de photons : Growth by pulsed laser deposition of new titanium oxide phases for transparent electronics and conversion of photon.

Degree: Docteur es, Science des matériaux, 2010, Université d'Orléans

 <p>Le photovoltaïque nécessite de nouveaux matériaux pour diminuer ces coûts et améliorer les rendements. Ces travaux de thèse ont concerné le développement de nouvelles phases… (more)

Subjects/Keywords: Oxyde transparent conducteur; Transparent conducting oxide

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APA (6th Edition):

Le Boulbar, E. (2010). Croissance par ablation laser pulsé de nouvelles phases d'oxyde de titane pour l'électronique transparente et la conversion de photons : Growth by pulsed laser deposition of new titanium oxide phases for transparent electronics and conversion of photon. (Doctoral Dissertation). Université d'Orléans. Retrieved from http://www.theses.fr/2010ORLE2089

Chicago Manual of Style (16th Edition):

Le Boulbar, Emmanuel. “Croissance par ablation laser pulsé de nouvelles phases d'oxyde de titane pour l'électronique transparente et la conversion de photons : Growth by pulsed laser deposition of new titanium oxide phases for transparent electronics and conversion of photon.” 2010. Doctoral Dissertation, Université d'Orléans. Accessed April 04, 2020. http://www.theses.fr/2010ORLE2089.

MLA Handbook (7th Edition):

Le Boulbar, Emmanuel. “Croissance par ablation laser pulsé de nouvelles phases d'oxyde de titane pour l'électronique transparente et la conversion de photons : Growth by pulsed laser deposition of new titanium oxide phases for transparent electronics and conversion of photon.” 2010. Web. 04 Apr 2020.

Vancouver:

Le Boulbar E. Croissance par ablation laser pulsé de nouvelles phases d'oxyde de titane pour l'électronique transparente et la conversion de photons : Growth by pulsed laser deposition of new titanium oxide phases for transparent electronics and conversion of photon. [Internet] [Doctoral dissertation]. Université d'Orléans; 2010. [cited 2020 Apr 04]. Available from: http://www.theses.fr/2010ORLE2089.

Council of Science Editors:

Le Boulbar E. Croissance par ablation laser pulsé de nouvelles phases d'oxyde de titane pour l'électronique transparente et la conversion de photons : Growth by pulsed laser deposition of new titanium oxide phases for transparent electronics and conversion of photon. [Doctoral Dissertation]. Université d'Orléans; 2010. Available from: http://www.theses.fr/2010ORLE2089


Washington State University

20. [No author]. INTRINSIC DEFECTS AND SODIUM ACCEPTORS DOPING IN ZNO .

Degree: 2012, Washington State University

 Zinc oxide (ZnO), with a direct band gap of 3.37 eV at room temperature, attracts considerable attention because of its promising applications for blue-UV light-emitting… (more)

Subjects/Keywords: Physics; Materials Science; P type; Semicondictors; Sodium; Zinc Oxide

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APA (6th Edition):

author], [. (2012). INTRINSIC DEFECTS AND SODIUM ACCEPTORS DOPING IN ZNO . (Thesis). Washington State University. Retrieved from http://hdl.handle.net/2376/4689

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

author], [No. “INTRINSIC DEFECTS AND SODIUM ACCEPTORS DOPING IN ZNO .” 2012. Thesis, Washington State University. Accessed April 04, 2020. http://hdl.handle.net/2376/4689.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

author], [No. “INTRINSIC DEFECTS AND SODIUM ACCEPTORS DOPING IN ZNO .” 2012. Web. 04 Apr 2020.

Vancouver:

author] [. INTRINSIC DEFECTS AND SODIUM ACCEPTORS DOPING IN ZNO . [Internet] [Thesis]. Washington State University; 2012. [cited 2020 Apr 04]. Available from: http://hdl.handle.net/2376/4689.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

author] [. INTRINSIC DEFECTS AND SODIUM ACCEPTORS DOPING IN ZNO . [Thesis]. Washington State University; 2012. Available from: http://hdl.handle.net/2376/4689

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Vanaja, K A. Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications.

Degree: Physics, 2011, Cochin University of Science and Technology

 <p>In the present studies, various copper delafossite materials viz; CuAlO2, CuGaO2, CuFeO2 , CuGa1-xFexO2, CuYO2 and CuCaxY1-xO2 were synthesised by solid state reaction technique. These… (more)

Subjects/Keywords: Transparent conducting oxides; copper delafossites; p-type conductivity; thin films; AgGaO2; pulsed laser deposition; heterojunction; material science; Physics

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APA (6th Edition):

Vanaja, K. A. (2011). Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/2773

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Vanaja, K A. “Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications.” 2011. Thesis, Cochin University of Science and Technology. Accessed April 04, 2020. http://dyuthi.cusat.ac.in/purl/2773.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Vanaja, K A. “Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications.” 2011. Web. 04 Apr 2020.

Vancouver:

Vanaja KA. Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications. [Internet] [Thesis]. Cochin University of Science and Technology; 2011. [cited 2020 Apr 04]. Available from: http://dyuthi.cusat.ac.in/purl/2773.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vanaja KA. Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications. [Thesis]. Cochin University of Science and Technology; 2011. Available from: http://dyuthi.cusat.ac.in/purl/2773

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

22. WANG YUE. P-type transparent conducting CU-AL-O thin films prepared by PE-MOCVD.

Degree: 2004, National University of Singapore

Subjects/Keywords: p-type; transparent; conducting; CuAlO2; thin film; PE-MOCVD

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APA (6th Edition):

YUE, W. (2004). P-type transparent conducting CU-AL-O thin films prepared by PE-MOCVD. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/27687

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

YUE, WANG. “P-type transparent conducting CU-AL-O thin films prepared by PE-MOCVD.” 2004. Thesis, National University of Singapore. Accessed April 04, 2020. http://scholarbank.nus.edu.sg/handle/10635/27687.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

YUE, WANG. “P-type transparent conducting CU-AL-O thin films prepared by PE-MOCVD.” 2004. Web. 04 Apr 2020.

Vancouver:

YUE W. P-type transparent conducting CU-AL-O thin films prepared by PE-MOCVD. [Internet] [Thesis]. National University of Singapore; 2004. [cited 2020 Apr 04]. Available from: http://scholarbank.nus.edu.sg/handle/10635/27687.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

YUE W. P-type transparent conducting CU-AL-O thin films prepared by PE-MOCVD. [Thesis]. National University of Singapore; 2004. Available from: http://scholarbank.nus.edu.sg/handle/10635/27687

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Texas State University – San Marcos

23. Shook, James A. First Principles Study on the Effects of Vacancies and Mg Doping on the Physical Properties of CuAlO2, AgAlO2, CuCrO2, and AgCrO2 Transparent Conductor Oxides.

Degree: MS, Physics, 2018, Texas State University – San Marcos

 The need for well understood, commercially available p-type transparent conducting oxides for incorporation into basic transparent semiconducting devices alongside their already well understood and available… (more)

Subjects/Keywords: Transparent Conducting Oxides; Physics; Density Functional Theory; Crystal Structure; Electronic Structure; Hole Effective Masses; Optical Properties; Defects; Dopants; Nanostructured materials; Metal oxide semiconductors; Oxide coating

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APA (6th Edition):

Shook, J. A. (2018). First Principles Study on the Effects of Vacancies and Mg Doping on the Physical Properties of CuAlO2, AgAlO2, CuCrO2, and AgCrO2 Transparent Conductor Oxides. (Masters Thesis). Texas State University – San Marcos. Retrieved from https://digital.library.txstate.edu/handle/10877/7371

Chicago Manual of Style (16th Edition):

Shook, James A. “First Principles Study on the Effects of Vacancies and Mg Doping on the Physical Properties of CuAlO2, AgAlO2, CuCrO2, and AgCrO2 Transparent Conductor Oxides.” 2018. Masters Thesis, Texas State University – San Marcos. Accessed April 04, 2020. https://digital.library.txstate.edu/handle/10877/7371.

MLA Handbook (7th Edition):

Shook, James A. “First Principles Study on the Effects of Vacancies and Mg Doping on the Physical Properties of CuAlO2, AgAlO2, CuCrO2, and AgCrO2 Transparent Conductor Oxides.” 2018. Web. 04 Apr 2020.

Vancouver:

Shook JA. First Principles Study on the Effects of Vacancies and Mg Doping on the Physical Properties of CuAlO2, AgAlO2, CuCrO2, and AgCrO2 Transparent Conductor Oxides. [Internet] [Masters thesis]. Texas State University – San Marcos; 2018. [cited 2020 Apr 04]. Available from: https://digital.library.txstate.edu/handle/10877/7371.

Council of Science Editors:

Shook JA. First Principles Study on the Effects of Vacancies and Mg Doping on the Physical Properties of CuAlO2, AgAlO2, CuCrO2, and AgCrO2 Transparent Conductor Oxides. [Masters Thesis]. Texas State University – San Marcos; 2018. Available from: https://digital.library.txstate.edu/handle/10877/7371


Oregon State University

24. Feller, Layannah Elizabeth. Zinc tin oxide thin-film transistor current mirror circuits.

Degree: MS, Electrical and Computer Engineering, 2011, Oregon State University

 The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition… (more)

Subjects/Keywords: amorphous oxide semiconductors; Amorphous semiconductors

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APA (6th Edition):

Feller, L. E. (2011). Zinc tin oxide thin-film transistor current mirror circuits. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/21742

Chicago Manual of Style (16th Edition):

Feller, Layannah Elizabeth. “Zinc tin oxide thin-film transistor current mirror circuits.” 2011. Masters Thesis, Oregon State University. Accessed April 04, 2020. http://hdl.handle.net/1957/21742.

MLA Handbook (7th Edition):

Feller, Layannah Elizabeth. “Zinc tin oxide thin-film transistor current mirror circuits.” 2011. Web. 04 Apr 2020.

Vancouver:

Feller LE. Zinc tin oxide thin-film transistor current mirror circuits. [Internet] [Masters thesis]. Oregon State University; 2011. [cited 2020 Apr 04]. Available from: http://hdl.handle.net/1957/21742.

Council of Science Editors:

Feller LE. Zinc tin oxide thin-film transistor current mirror circuits. [Masters Thesis]. Oregon State University; 2011. Available from: http://hdl.handle.net/1957/21742


NSYSU

25. Yang, Kung-shang. Study of Zn1-x-yLixSnyO thin films by growth and physics properties.

Degree: Master, Physics, 2010, NSYSU

 Since the discovery of transparent conducting oxide (TCO) thin filmsï¼TCO has been widely used in optoelectronic devices. To increase the potential application of the TCO,… (more)

Subjects/Keywords: amorphous; ZnO; Transparent Conducting Oxide

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APA (6th Edition):

Yang, K. (2010). Study of Zn1-x-yLixSnyO thin films by growth and physics properties. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0909110-041330

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Kung-shang. “Study of Zn1-x-yLixSnyO thin films by growth and physics properties.” 2010. Thesis, NSYSU. Accessed April 04, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0909110-041330.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Kung-shang. “Study of Zn1-x-yLixSnyO thin films by growth and physics properties.” 2010. Web. 04 Apr 2020.

Vancouver:

Yang K. Study of Zn1-x-yLixSnyO thin films by growth and physics properties. [Internet] [Thesis]. NSYSU; 2010. [cited 2020 Apr 04]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0909110-041330.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang K. Study of Zn1-x-yLixSnyO thin films by growth and physics properties. [Thesis]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0909110-041330

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

26. Koussi-Daoud, Sana. Préparation électrochimique et caractérisation de couches nanostructurées de semi-conducteurs de type p pour cellules photovoltaïques hybrides : Electrodeposition and characterization of p-type nanostructured semi-conductor films for hybrid photovoltaic solar cells.

Degree: Docteur es, Chimie, 2016, Université Pierre et Marie Curie – Paris VI

 <p>Cette thèse visait à développer des techniques de croissance électrochimiques d'oxydes pour obtenir des semi-conducteurs de type p utilisables comme photocathodes dans les cellules solaires… (more)

Subjects/Keywords: Électrodépôt; Semi-conducteur de type p; Oxyde de nickel; Dmso; Oxyde cuivreux; Nanostructure; Cellule solaire à colorant de type p; Electrodeposition; P-type semi-conductor; Nickel oxide; 543.4

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APA (6th Edition):

Koussi-Daoud, S. (2016). Préparation électrochimique et caractérisation de couches nanostructurées de semi-conducteurs de type p pour cellules photovoltaïques hybrides : Electrodeposition and characterization of p-type nanostructured semi-conductor films for hybrid photovoltaic solar cells. (Doctoral Dissertation). Université Pierre et Marie Curie – Paris VI. Retrieved from http://www.theses.fr/2016PA066505

Chicago Manual of Style (16th Edition):

Koussi-Daoud, Sana. “Préparation électrochimique et caractérisation de couches nanostructurées de semi-conducteurs de type p pour cellules photovoltaïques hybrides : Electrodeposition and characterization of p-type nanostructured semi-conductor films for hybrid photovoltaic solar cells.” 2016. Doctoral Dissertation, Université Pierre et Marie Curie – Paris VI. Accessed April 04, 2020. http://www.theses.fr/2016PA066505.

MLA Handbook (7th Edition):

Koussi-Daoud, Sana. “Préparation électrochimique et caractérisation de couches nanostructurées de semi-conducteurs de type p pour cellules photovoltaïques hybrides : Electrodeposition and characterization of p-type nanostructured semi-conductor films for hybrid photovoltaic solar cells.” 2016. Web. 04 Apr 2020.

Vancouver:

Koussi-Daoud S. Préparation électrochimique et caractérisation de couches nanostructurées de semi-conducteurs de type p pour cellules photovoltaïques hybrides : Electrodeposition and characterization of p-type nanostructured semi-conductor films for hybrid photovoltaic solar cells. [Internet] [Doctoral dissertation]. Université Pierre et Marie Curie – Paris VI; 2016. [cited 2020 Apr 04]. Available from: http://www.theses.fr/2016PA066505.

Council of Science Editors:

Koussi-Daoud S. Préparation électrochimique et caractérisation de couches nanostructurées de semi-conducteurs de type p pour cellules photovoltaïques hybrides : Electrodeposition and characterization of p-type nanostructured semi-conductor films for hybrid photovoltaic solar cells. [Doctoral Dissertation]. Université Pierre et Marie Curie – Paris VI; 2016. Available from: http://www.theses.fr/2016PA066505

27. Lee, Sunghwan. Amorphous IZO-based Thin Film Transistors: Native Defect-based Doping, Amorphous Phase Instabilities, Threshold Voltage Shifts, and Metallization Strategies.

Degree: PhD, Materials Science, 2013, Brown University

 Amorphous oxide semiconductor (AOS) thin film transistors (TFTs) based on In2O3 have attracted much interest for use as pixel switching elements in next generation active-matrix… (more)

Subjects/Keywords: Amorphous oxide semiconductors

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APA (6th Edition):

Lee, S. (2013). Amorphous IZO-based Thin Film Transistors: Native Defect-based Doping, Amorphous Phase Instabilities, Threshold Voltage Shifts, and Metallization Strategies. (Doctoral Dissertation). Brown University. Retrieved from https://repository.library.brown.edu/studio/item/bdr:320542/

Chicago Manual of Style (16th Edition):

Lee, Sunghwan. “Amorphous IZO-based Thin Film Transistors: Native Defect-based Doping, Amorphous Phase Instabilities, Threshold Voltage Shifts, and Metallization Strategies.” 2013. Doctoral Dissertation, Brown University. Accessed April 04, 2020. https://repository.library.brown.edu/studio/item/bdr:320542/.

MLA Handbook (7th Edition):

Lee, Sunghwan. “Amorphous IZO-based Thin Film Transistors: Native Defect-based Doping, Amorphous Phase Instabilities, Threshold Voltage Shifts, and Metallization Strategies.” 2013. Web. 04 Apr 2020.

Vancouver:

Lee S. Amorphous IZO-based Thin Film Transistors: Native Defect-based Doping, Amorphous Phase Instabilities, Threshold Voltage Shifts, and Metallization Strategies. [Internet] [Doctoral dissertation]. Brown University; 2013. [cited 2020 Apr 04]. Available from: https://repository.library.brown.edu/studio/item/bdr:320542/.

Council of Science Editors:

Lee S. Amorphous IZO-based Thin Film Transistors: Native Defect-based Doping, Amorphous Phase Instabilities, Threshold Voltage Shifts, and Metallization Strategies. [Doctoral Dissertation]. Brown University; 2013. Available from: https://repository.library.brown.edu/studio/item/bdr:320542/


University of California – Riverside

28. Huang, Jian. Zinc Oxide Based Nonvolatile Memories and Random Lasers.

Degree: Electrical Engineering, 2013, University of California – Riverside

 Nonvolatile memory devices and random laser devices based on ZnO thin film and nanostructures are studied and discussed in this dissertation. The p-n-p nonvolatile memory… (more)

Subjects/Keywords: Electrical engineering; Nanotechnology; Materials Science; dopping; nonvolatile memory; p-type; random laser; Zinc Oxide

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APA (6th Edition):

Huang, J. (2013). Zinc Oxide Based Nonvolatile Memories and Random Lasers. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/0ck9x1gg

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Jian. “Zinc Oxide Based Nonvolatile Memories and Random Lasers.” 2013. Thesis, University of California – Riverside. Accessed April 04, 2020. http://www.escholarship.org/uc/item/0ck9x1gg.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Jian. “Zinc Oxide Based Nonvolatile Memories and Random Lasers.” 2013. Web. 04 Apr 2020.

Vancouver:

Huang J. Zinc Oxide Based Nonvolatile Memories and Random Lasers. [Internet] [Thesis]. University of California – Riverside; 2013. [cited 2020 Apr 04]. Available from: http://www.escholarship.org/uc/item/0ck9x1gg.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang J. Zinc Oxide Based Nonvolatile Memories and Random Lasers. [Thesis]. University of California – Riverside; 2013. Available from: http://www.escholarship.org/uc/item/0ck9x1gg

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Hong Kong

29. Liu, Lining. A study on the improvement of GaAs MOS devices with high-k gate dielectric.

Degree: PhD, 2017, University of Hong Kong

 Since silicon-based Metal-Oxide-Semiconductor (MOS) technology is approaching its physical limit, high-mobility semiconductors (Ge, III-V compounds, etc.) have been proposed to replace silicon. Among them, GaAs… (more)

Subjects/Keywords: Metal oxide semiconductors; Dielectrics; Gallium arsenide semiconductors

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APA (6th Edition):

Liu, L. (2017). A study on the improvement of GaAs MOS devices with high-k gate dielectric. (Doctoral Dissertation). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/249877

Chicago Manual of Style (16th Edition):

Liu, Lining. “A study on the improvement of GaAs MOS devices with high-k gate dielectric.” 2017. Doctoral Dissertation, University of Hong Kong. Accessed April 04, 2020. http://hdl.handle.net/10722/249877.

MLA Handbook (7th Edition):

Liu, Lining. “A study on the improvement of GaAs MOS devices with high-k gate dielectric.” 2017. Web. 04 Apr 2020.

Vancouver:

Liu L. A study on the improvement of GaAs MOS devices with high-k gate dielectric. [Internet] [Doctoral dissertation]. University of Hong Kong; 2017. [cited 2020 Apr 04]. Available from: http://hdl.handle.net/10722/249877.

Council of Science Editors:

Liu L. A study on the improvement of GaAs MOS devices with high-k gate dielectric. [Doctoral Dissertation]. University of Hong Kong; 2017. Available from: http://hdl.handle.net/10722/249877

30. Valour, Arnaud. Synthèse d'oxyde de zinc dopé azote sous formes de poudre et de couche mince : caractérisation du type de semiconductivité : Synthesis of nitrogen doped zinc oxide as powders ans thin films : characterization of the type of semiconductivity.

Degree: Docteur es, Chimie, 2017, Rennes 1

 <p>Cette thèse fait suite à des travaux ayant permis, de manière non reproductible, la stabilisation de l’oxyde de zinc de type-p (p-ZnO:N) sur une période… (more)

Subjects/Keywords: Oxyde de zinc; Semi-Conducteur de type p; Nanoparticules; Non-Stœchiométrie; Dopage azote; Couche mince; Zinc oxide; P-Type semiconductor; Nanoparticles; Non-Stoichiometry; Nitrogen doping; Thin film

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Valour, A. (2017). Synthèse d'oxyde de zinc dopé azote sous formes de poudre et de couche mince : caractérisation du type de semiconductivité : Synthesis of nitrogen doped zinc oxide as powders ans thin films : characterization of the type of semiconductivity. (Doctoral Dissertation). Rennes 1. Retrieved from http://www.theses.fr/2017REN1S014

Chicago Manual of Style (16th Edition):

Valour, Arnaud. “Synthèse d'oxyde de zinc dopé azote sous formes de poudre et de couche mince : caractérisation du type de semiconductivité : Synthesis of nitrogen doped zinc oxide as powders ans thin films : characterization of the type of semiconductivity.” 2017. Doctoral Dissertation, Rennes 1. Accessed April 04, 2020. http://www.theses.fr/2017REN1S014.

MLA Handbook (7th Edition):

Valour, Arnaud. “Synthèse d'oxyde de zinc dopé azote sous formes de poudre et de couche mince : caractérisation du type de semiconductivité : Synthesis of nitrogen doped zinc oxide as powders ans thin films : characterization of the type of semiconductivity.” 2017. Web. 04 Apr 2020.

Vancouver:

Valour A. Synthèse d'oxyde de zinc dopé azote sous formes de poudre et de couche mince : caractérisation du type de semiconductivité : Synthesis of nitrogen doped zinc oxide as powders ans thin films : characterization of the type of semiconductivity. [Internet] [Doctoral dissertation]. Rennes 1; 2017. [cited 2020 Apr 04]. Available from: http://www.theses.fr/2017REN1S014.

Council of Science Editors:

Valour A. Synthèse d'oxyde de zinc dopé azote sous formes de poudre et de couche mince : caractérisation du type de semiconductivité : Synthesis of nitrogen doped zinc oxide as powders ans thin films : characterization of the type of semiconductivity. [Doctoral Dissertation]. Rennes 1; 2017. Available from: http://www.theses.fr/2017REN1S014

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