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You searched for subject:(nitrides materials). Showing records 1 – 30 of 45 total matches.

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Latrobe University

1. Hashim, Hashimah. The growth and characterisation of the dilute nitride InGaAsN.

Degree: PhD, 2012, Latrobe University

Thesis (Ph.D.) - La Trobe University, 2012

Submission note: "A thesis submitted in total fulfilment of the requirements for the degree of Doctor of Philosophy… (more)

Subjects/Keywords: Nitrides.; Semiconductors  – Materials.

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APA (6th Edition):

Hashim, H. (2012). The growth and characterisation of the dilute nitride InGaAsN. (Doctoral Dissertation). Latrobe University. Retrieved from http://hdl.handle.net/1959.9/522346

Chicago Manual of Style (16th Edition):

Hashim, Hashimah. “The growth and characterisation of the dilute nitride InGaAsN.” 2012. Doctoral Dissertation, Latrobe University. Accessed August 08, 2020. http://hdl.handle.net/1959.9/522346.

MLA Handbook (7th Edition):

Hashim, Hashimah. “The growth and characterisation of the dilute nitride InGaAsN.” 2012. Web. 08 Aug 2020.

Vancouver:

Hashim H. The growth and characterisation of the dilute nitride InGaAsN. [Internet] [Doctoral dissertation]. Latrobe University; 2012. [cited 2020 Aug 08]. Available from: http://hdl.handle.net/1959.9/522346.

Council of Science Editors:

Hashim H. The growth and characterisation of the dilute nitride InGaAsN. [Doctoral Dissertation]. Latrobe University; 2012. Available from: http://hdl.handle.net/1959.9/522346

2. Kaun, Stephen William. Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy.

Degree: 2014, University of California – eScholarship, University of California

 GaN-based high-electron-mobility transistors (HEMTs) will play an important role in the next generation of high-frequency amplifiers and power-switching devices. Since parasitic conduction (leakage) through the… (more)

Subjects/Keywords: Materials Science; Epitaxy; III-nitrides; Transistors

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APA (6th Edition):

Kaun, S. W. (2014). Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/618910sq

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kaun, Stephen William. “Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy.” 2014. Thesis, University of California – eScholarship, University of California. Accessed August 08, 2020. http://www.escholarship.org/uc/item/618910sq.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kaun, Stephen William. “Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy.” 2014. Web. 08 Aug 2020.

Vancouver:

Kaun SW. Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy. [Internet] [Thesis]. University of California – eScholarship, University of California; 2014. [cited 2020 Aug 08]. Available from: http://www.escholarship.org/uc/item/618910sq.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kaun SW. Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy. [Thesis]. University of California – eScholarship, University of California; 2014. Available from: http://www.escholarship.org/uc/item/618910sq

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Cornell University

3. Robbins, Spencer. Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides .

Degree: 2015, Cornell University

 Controlling the structure of inorganic materials on the mesoscale (2-50 nm) is desirable for many applications and can influence the materials' properties and performance in… (more)

Subjects/Keywords: block copolymers; mesoporous materials; metal nitrides

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APA (6th Edition):

Robbins, S. (2015). Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/39425

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Robbins, Spencer. “Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides .” 2015. Thesis, Cornell University. Accessed August 08, 2020. http://hdl.handle.net/1813/39425.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Robbins, Spencer. “Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides .” 2015. Web. 08 Aug 2020.

Vancouver:

Robbins S. Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides . [Internet] [Thesis]. Cornell University; 2015. [cited 2020 Aug 08]. Available from: http://hdl.handle.net/1813/39425.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Robbins S. Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides . [Thesis]. Cornell University; 2015. Available from: http://hdl.handle.net/1813/39425

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Arizona State University

4. Hill, Arlinda. Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors.

Degree: PhD, Physics, 2011, Arizona State University

 III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium… (more)

Subjects/Keywords: Physics; Materials Science; III nitrides; Semiconductors; thermodynamics

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APA (6th Edition):

Hill, A. (2011). Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/9035

Chicago Manual of Style (16th Edition):

Hill, Arlinda. “Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors.” 2011. Doctoral Dissertation, Arizona State University. Accessed August 08, 2020. http://repository.asu.edu/items/9035.

MLA Handbook (7th Edition):

Hill, Arlinda. “Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors.” 2011. Web. 08 Aug 2020.

Vancouver:

Hill A. Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors. [Internet] [Doctoral dissertation]. Arizona State University; 2011. [cited 2020 Aug 08]. Available from: http://repository.asu.edu/items/9035.

Council of Science Editors:

Hill A. Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors. [Doctoral Dissertation]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/9035


Drexel University

5. Urbankowski, Patrick S. Synthesis of Two-Dimensional Transition Metal Nitrides.

Degree: 2019, Drexel University

The family of two-dimensional (2D) materials  solids with high aspect ratios and thicknesses consisting of a few atomic layers  has grown far beyond… (more)

Subjects/Keywords: Materials science; Two-dimensional materials; Nanostructured materials; MXenes; Nanotechnology – Research; Transition metal nitrides

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APA (6th Edition):

Urbankowski, P. S. (2019). Synthesis of Two-Dimensional Transition Metal Nitrides. (Thesis). Drexel University. Retrieved from https://idea.library.drexel.edu/islandora/object/idea%3A9509

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Urbankowski, Patrick S. “Synthesis of Two-Dimensional Transition Metal Nitrides.” 2019. Thesis, Drexel University. Accessed August 08, 2020. https://idea.library.drexel.edu/islandora/object/idea%3A9509.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Urbankowski, Patrick S. “Synthesis of Two-Dimensional Transition Metal Nitrides.” 2019. Web. 08 Aug 2020.

Vancouver:

Urbankowski PS. Synthesis of Two-Dimensional Transition Metal Nitrides. [Internet] [Thesis]. Drexel University; 2019. [cited 2020 Aug 08]. Available from: https://idea.library.drexel.edu/islandora/object/idea%3A9509.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Urbankowski PS. Synthesis of Two-Dimensional Transition Metal Nitrides. [Thesis]. Drexel University; 2019. Available from: https://idea.library.drexel.edu/islandora/object/idea%3A9509

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

6. Al Balushi, Zakaria. MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers.

Degree: 2017, Penn State University

 Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This… (more)

Subjects/Keywords: Group-III Nitrides; MOCVD; Thin Films; Graphene; 2D Materials

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APA (6th Edition):

Al Balushi, Z. (2017). MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers. (Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/14457zya5004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Al Balushi, Zakaria. “MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers.” 2017. Thesis, Penn State University. Accessed August 08, 2020. https://etda.libraries.psu.edu/catalog/14457zya5004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Al Balushi, Zakaria. “MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers.” 2017. Web. 08 Aug 2020.

Vancouver:

Al Balushi Z. MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers. [Internet] [Thesis]. Penn State University; 2017. [cited 2020 Aug 08]. Available from: https://etda.libraries.psu.edu/catalog/14457zya5004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Al Balushi Z. MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers. [Thesis]. Penn State University; 2017. Available from: https://etda.libraries.psu.edu/catalog/14457zya5004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


The Ohio State University

7. Seibel, Harry Andrew, II. Psuedo-Oxides: Property Tailoring Through the Integration of Nitrogen and Fluorine.

Degree: PhD, Chemistry, 2009, The Ohio State University

 This research focuses on the study of inorganic solids in which the anions of oxygen, fluorine and nitrogen have been incorporated. These compounds have been… (more)

Subjects/Keywords: Chemistry; Materials Science; Mixed anions; Nitrides; Fluorides; Photocatalysis; NLO; Polar solids

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APA (6th Edition):

Seibel, Harry Andrew, I. (2009). Psuedo-Oxides: Property Tailoring Through the Integration of Nitrogen and Fluorine. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1250624527

Chicago Manual of Style (16th Edition):

Seibel, Harry Andrew, II. “Psuedo-Oxides: Property Tailoring Through the Integration of Nitrogen and Fluorine.” 2009. Doctoral Dissertation, The Ohio State University. Accessed August 08, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250624527.

MLA Handbook (7th Edition):

Seibel, Harry Andrew, II. “Psuedo-Oxides: Property Tailoring Through the Integration of Nitrogen and Fluorine.” 2009. Web. 08 Aug 2020.

Vancouver:

Seibel, Harry Andrew I. Psuedo-Oxides: Property Tailoring Through the Integration of Nitrogen and Fluorine. [Internet] [Doctoral dissertation]. The Ohio State University; 2009. [cited 2020 Aug 08]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1250624527.

Council of Science Editors:

Seibel, Harry Andrew I. Psuedo-Oxides: Property Tailoring Through the Integration of Nitrogen and Fluorine. [Doctoral Dissertation]. The Ohio State University; 2009. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1250624527

8. Hwang, David. Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays.

Degree: 2018, University of California – eScholarship, University of California

 High efficiency III-nitride light-emitting diodes (LEDs) have drastically improved solid-state lighting. They are sold in stores and are gradually replacing compact fluorescent lightbulbs because they… (more)

Subjects/Keywords: Materials Science; display; iii-nitrides; mass transfer; micro-LED

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APA (6th Edition):

Hwang, D. (2018). Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/2b28z31w

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hwang, David. “Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays.” 2018. Thesis, University of California – eScholarship, University of California. Accessed August 08, 2020. http://www.escholarship.org/uc/item/2b28z31w.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hwang, David. “Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays.” 2018. Web. 08 Aug 2020.

Vancouver:

Hwang D. Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays. [Internet] [Thesis]. University of California – eScholarship, University of California; 2018. [cited 2020 Aug 08]. Available from: http://www.escholarship.org/uc/item/2b28z31w.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hwang D. Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays. [Thesis]. University of California – eScholarship, University of California; 2018. Available from: http://www.escholarship.org/uc/item/2b28z31w

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

9. Liu, Chao. Monolithic integration of III-nitride devices by selective epitaxial growth.

Degree: 2016, Hong Kong University of Science and Technology

 Recent decades have witnessed a booming development of III-nitride optoelectronic devices where a direct tunable bandgap is essential for efficient light emission in the green… (more)

Subjects/Keywords: Nitrides ; Light emitting diodes ; Materials ; Optoelectronic devices ; Epitaxy

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APA (6th Edition):

Liu, C. (2016). Monolithic integration of III-nitride devices by selective epitaxial growth. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-86944 ; https://doi.org/10.14711/thesis-b1626116 ; http://repository.ust.hk/ir/bitstream/1783.1-86944/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Chao. “Monolithic integration of III-nitride devices by selective epitaxial growth.” 2016. Thesis, Hong Kong University of Science and Technology. Accessed August 08, 2020. http://repository.ust.hk/ir/Record/1783.1-86944 ; https://doi.org/10.14711/thesis-b1626116 ; http://repository.ust.hk/ir/bitstream/1783.1-86944/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Chao. “Monolithic integration of III-nitride devices by selective epitaxial growth.” 2016. Web. 08 Aug 2020.

Vancouver:

Liu C. Monolithic integration of III-nitride devices by selective epitaxial growth. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2016. [cited 2020 Aug 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-86944 ; https://doi.org/10.14711/thesis-b1626116 ; http://repository.ust.hk/ir/bitstream/1783.1-86944/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu C. Monolithic integration of III-nitride devices by selective epitaxial growth. [Thesis]. Hong Kong University of Science and Technology; 2016. Available from: http://repository.ust.hk/ir/Record/1783.1-86944 ; https://doi.org/10.14711/thesis-b1626116 ; http://repository.ust.hk/ir/bitstream/1783.1-86944/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

10. Tian, Zhenhuan MAE. Selective area growth of III-nitride based micro-structures on three dimensional patterned sapphire substrates and related device fabrication.

Degree: 2018, Hong Kong University of Science and Technology

 GaN based light-emitting diodes (LEDs) can cover the entire range of visible light spectrum, thereby showing great potential in various applications. However, III-V nitrides planar… (more)

Subjects/Keywords: Light emitting diodes ; Optical properties ; Mechanical properties ; Microstructure ; Semiconductors ; Materials ; Nitrides

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APA (6th Edition):

Tian, Z. M. (2018). Selective area growth of III-nitride based micro-structures on three dimensional patterned sapphire substrates and related device fabrication. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-96018 ; https://doi.org/10.14711/thesis-991012638163503412 ; http://repository.ust.hk/ir/bitstream/1783.1-96018/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tian, Zhenhuan MAE. “Selective area growth of III-nitride based micro-structures on three dimensional patterned sapphire substrates and related device fabrication.” 2018. Thesis, Hong Kong University of Science and Technology. Accessed August 08, 2020. http://repository.ust.hk/ir/Record/1783.1-96018 ; https://doi.org/10.14711/thesis-991012638163503412 ; http://repository.ust.hk/ir/bitstream/1783.1-96018/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tian, Zhenhuan MAE. “Selective area growth of III-nitride based micro-structures on three dimensional patterned sapphire substrates and related device fabrication.” 2018. Web. 08 Aug 2020.

Vancouver:

Tian ZM. Selective area growth of III-nitride based micro-structures on three dimensional patterned sapphire substrates and related device fabrication. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2018. [cited 2020 Aug 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-96018 ; https://doi.org/10.14711/thesis-991012638163503412 ; http://repository.ust.hk/ir/bitstream/1783.1-96018/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tian ZM. Selective area growth of III-nitride based micro-structures on three dimensional patterned sapphire substrates and related device fabrication. [Thesis]. Hong Kong University of Science and Technology; 2018. Available from: http://repository.ust.hk/ir/Record/1783.1-96018 ; https://doi.org/10.14711/thesis-991012638163503412 ; http://repository.ust.hk/ir/bitstream/1783.1-96018/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Kansas State University

11. Hoffman, Timothy B. Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method.

Degree: PhD, Department of Chemical Engineering, 2016, Kansas State University

 Hexagonal boron nitride (hBN) is a wide bandgap III-V semiconductor that has seen new interest due to the development of other III-V LED devices and… (more)

Subjects/Keywords: Crystal growth; Group III nitrides; Compound semiconductors; Materials science; Chemical engineering; Solution growth

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APA (6th Edition):

Hoffman, T. B. (2016). Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method. (Doctoral Dissertation). Kansas State University. Retrieved from http://hdl.handle.net/2097/32797

Chicago Manual of Style (16th Edition):

Hoffman, Timothy B. “Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method.” 2016. Doctoral Dissertation, Kansas State University. Accessed August 08, 2020. http://hdl.handle.net/2097/32797.

MLA Handbook (7th Edition):

Hoffman, Timothy B. “Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method.” 2016. Web. 08 Aug 2020.

Vancouver:

Hoffman TB. Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method. [Internet] [Doctoral dissertation]. Kansas State University; 2016. [cited 2020 Aug 08]. Available from: http://hdl.handle.net/2097/32797.

Council of Science Editors:

Hoffman TB. Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method. [Doctoral Dissertation]. Kansas State University; 2016. Available from: http://hdl.handle.net/2097/32797

12. Gordon, Luke. Atomic-scale investigations of current and future devices: from nitride-based transistors to quantum computing.

Degree: 2014, University of California – eScholarship, University of California

 Our era is defined by its technology, and our future is dependent on its continued evolution. Over the past few decades, we have witnessed the… (more)

Subjects/Keywords: Materials Science; Density-functional theory; III-nitrides; Oxide interfaces; Quantum computing; Schrodinger-Poisson simulations

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APA (6th Edition):

Gordon, L. (2014). Atomic-scale investigations of current and future devices: from nitride-based transistors to quantum computing. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/4f58f7fb

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gordon, Luke. “Atomic-scale investigations of current and future devices: from nitride-based transistors to quantum computing.” 2014. Thesis, University of California – eScholarship, University of California. Accessed August 08, 2020. http://www.escholarship.org/uc/item/4f58f7fb.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gordon, Luke. “Atomic-scale investigations of current and future devices: from nitride-based transistors to quantum computing.” 2014. Web. 08 Aug 2020.

Vancouver:

Gordon L. Atomic-scale investigations of current and future devices: from nitride-based transistors to quantum computing. [Internet] [Thesis]. University of California – eScholarship, University of California; 2014. [cited 2020 Aug 08]. Available from: http://www.escholarship.org/uc/item/4f58f7fb.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gordon L. Atomic-scale investigations of current and future devices: from nitride-based transistors to quantum computing. [Thesis]. University of California – eScholarship, University of California; 2014. Available from: http://www.escholarship.org/uc/item/4f58f7fb

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

13. Dreyer, Cyrus Eduard. First-principles investigations of III-nitride bulk and surface properties.

Degree: 2014, University of California – eScholarship, University of California

 The III-nitride semiconductors, including AlN, InN, GaN, and BN have been demonstrated as technologically exciting materials for a wide range of device applications. With band… (more)

Subjects/Keywords: Materials Science; Density Functional Theory; effective mass; III-nitrides; spontaneous polarization; surface energy

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APA (6th Edition):

Dreyer, C. E. (2014). First-principles investigations of III-nitride bulk and surface properties. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/32f958ps

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dreyer, Cyrus Eduard. “First-principles investigations of III-nitride bulk and surface properties.” 2014. Thesis, University of California – eScholarship, University of California. Accessed August 08, 2020. http://www.escholarship.org/uc/item/32f958ps.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dreyer, Cyrus Eduard. “First-principles investigations of III-nitride bulk and surface properties.” 2014. Web. 08 Aug 2020.

Vancouver:

Dreyer CE. First-principles investigations of III-nitride bulk and surface properties. [Internet] [Thesis]. University of California – eScholarship, University of California; 2014. [cited 2020 Aug 08]. Available from: http://www.escholarship.org/uc/item/32f958ps.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dreyer CE. First-principles investigations of III-nitride bulk and surface properties. [Thesis]. University of California – eScholarship, University of California; 2014. Available from: http://www.escholarship.org/uc/item/32f958ps

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

14. Myzaferi, Anisa. Transparent Conducting Oxide Clad Limited Area Epitaxy Semipolar III-nitride Laser Diodes.

Degree: 2016, University of California – eScholarship, University of California

 Basal plane III-nitride laser diodes have been commercialized for wide ranging technologies, including pico projectors for solid state RGB displays, optical data storage and automotive… (more)

Subjects/Keywords: Electrical engineering; Nanotechnology; Materials Science; III-nitrides; ITO; Lasers; Optoelectronics; Semipolar GaN; ZnO

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APA (6th Edition):

Myzaferi, A. (2016). Transparent Conducting Oxide Clad Limited Area Epitaxy Semipolar III-nitride Laser Diodes. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/07v9q6nj

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Myzaferi, Anisa. “Transparent Conducting Oxide Clad Limited Area Epitaxy Semipolar III-nitride Laser Diodes.” 2016. Thesis, University of California – eScholarship, University of California. Accessed August 08, 2020. http://www.escholarship.org/uc/item/07v9q6nj.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Myzaferi, Anisa. “Transparent Conducting Oxide Clad Limited Area Epitaxy Semipolar III-nitride Laser Diodes.” 2016. Web. 08 Aug 2020.

Vancouver:

Myzaferi A. Transparent Conducting Oxide Clad Limited Area Epitaxy Semipolar III-nitride Laser Diodes. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2020 Aug 08]. Available from: http://www.escholarship.org/uc/item/07v9q6nj.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Myzaferi A. Transparent Conducting Oxide Clad Limited Area Epitaxy Semipolar III-nitride Laser Diodes. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/07v9q6nj

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. Kuritzky, Leah. Epitaxy and Device Design for High Efficiency Blue LEDs and Laser Diodes.

Degree: 2016, University of California – eScholarship, University of California

 The (Al,Ga,In)N materials system has impacted energy efficiency on the world-wide scale through its application to blue light-emitting diodes (LEDs), which were invented and developed… (more)

Subjects/Keywords: Materials Science; Electrical engineering; Nanotechnology; GaN; III-Nitrides; laser diodes; LEDS; m-plane; ray tracing

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APA (6th Edition):

Kuritzky, L. (2016). Epitaxy and Device Design for High Efficiency Blue LEDs and Laser Diodes. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/51d0763h

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kuritzky, Leah. “Epitaxy and Device Design for High Efficiency Blue LEDs and Laser Diodes.” 2016. Thesis, University of California – eScholarship, University of California. Accessed August 08, 2020. http://www.escholarship.org/uc/item/51d0763h.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kuritzky, Leah. “Epitaxy and Device Design for High Efficiency Blue LEDs and Laser Diodes.” 2016. Web. 08 Aug 2020.

Vancouver:

Kuritzky L. Epitaxy and Device Design for High Efficiency Blue LEDs and Laser Diodes. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2020 Aug 08]. Available from: http://www.escholarship.org/uc/item/51d0763h.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kuritzky L. Epitaxy and Device Design for High Efficiency Blue LEDs and Laser Diodes. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/51d0763h

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

16. Song, Di. III-nitride normally-off low-density-drain high electron mobility transistors (LDD-HEMTs).

Degree: 2007, Hong Kong University of Science and Technology

 Since the first demonstration of the AlGaN/GaN high electron mobility transistor (HEMT) over a decade ago, there has been rapid development in wide bandgap GaN-based… (more)

Subjects/Keywords: Microwave transistors ; Microwave devices  – Materials ; Nitrides

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APA (6th Edition):

Song, D. (2007). III-nitride normally-off low-density-drain high electron mobility transistors (LDD-HEMTs). (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-4317 ; https://doi.org/10.14711/thesis-b987598 ; http://repository.ust.hk/ir/bitstream/1783.1-4317/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Song, Di. “III-nitride normally-off low-density-drain high electron mobility transistors (LDD-HEMTs).” 2007. Thesis, Hong Kong University of Science and Technology. Accessed August 08, 2020. http://repository.ust.hk/ir/Record/1783.1-4317 ; https://doi.org/10.14711/thesis-b987598 ; http://repository.ust.hk/ir/bitstream/1783.1-4317/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Song, Di. “III-nitride normally-off low-density-drain high electron mobility transistors (LDD-HEMTs).” 2007. Web. 08 Aug 2020.

Vancouver:

Song D. III-nitride normally-off low-density-drain high electron mobility transistors (LDD-HEMTs). [Internet] [Thesis]. Hong Kong University of Science and Technology; 2007. [cited 2020 Aug 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-4317 ; https://doi.org/10.14711/thesis-b987598 ; http://repository.ust.hk/ir/bitstream/1783.1-4317/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Song D. III-nitride normally-off low-density-drain high electron mobility transistors (LDD-HEMTs). [Thesis]. Hong Kong University of Science and Technology; 2007. Available from: http://repository.ust.hk/ir/Record/1783.1-4317 ; https://doi.org/10.14711/thesis-b987598 ; http://repository.ust.hk/ir/bitstream/1783.1-4317/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Alabama

17. Schulz, Bradford Christopher. Microstructures and oxidation properties in hafnium-tantalum-nitride ceramics.

Degree: 2013, University of Alabama

 Ultra high temperature ceramics (UHTC) comprise a class of materials characterized by high melting points, chemical inertness, high hardness, and moderate oxidation. These ceramics typically… (more)

Subjects/Keywords: Electronic Thesis or Dissertation;  – thesis; Materials Science; Microscopy Characterization; Oxidation; Oxy-nitrides; Ultra-High Temperature Ceramics

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APA (6th Edition):

Schulz, B. C. (2013). Microstructures and oxidation properties in hafnium-tantalum-nitride ceramics. (Thesis). University of Alabama. Retrieved from http://purl.lib.ua.edu/89913

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Schulz, Bradford Christopher. “Microstructures and oxidation properties in hafnium-tantalum-nitride ceramics.” 2013. Thesis, University of Alabama. Accessed August 08, 2020. http://purl.lib.ua.edu/89913.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Schulz, Bradford Christopher. “Microstructures and oxidation properties in hafnium-tantalum-nitride ceramics.” 2013. Web. 08 Aug 2020.

Vancouver:

Schulz BC. Microstructures and oxidation properties in hafnium-tantalum-nitride ceramics. [Internet] [Thesis]. University of Alabama; 2013. [cited 2020 Aug 08]. Available from: http://purl.lib.ua.edu/89913.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Schulz BC. Microstructures and oxidation properties in hafnium-tantalum-nitride ceramics. [Thesis]. University of Alabama; 2013. Available from: http://purl.lib.ua.edu/89913

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

18. Líliam Márcia Silva Ansaloni. Sínteses e caracterização de nitreto de boro nanoestrutrado com potencialidade de aplicação em cosmetologia.

Degree: Master, 2009, Centro de Desenvolvimento da Tecnologia Nuclear

A aplicação de cosméticos é um recurso importante para a manutenção da saúde da pele e, conseqüentemente, de sua beleza. É de conhecimento que os… (more)

Subjects/Keywords: Biomateriais; Materiais; Farmacologia; Cosmetologia; Nitreto de boro; Pharmacology; Consumer products; Synthesis; Boron nitrides; Biomaterials; Materials; BIOMATERIAIS E MATERIAIS BIOCOMPATIVEIS

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APA (6th Edition):

Ansaloni, L. M. S. (2009). Sínteses e caracterização de nitreto de boro nanoestrutrado com potencialidade de aplicação em cosmetologia. (Masters Thesis). Centro de Desenvolvimento da Tecnologia Nuclear. Retrieved from http://www.bdtd.cdtn.br//tde_busca/arquivo.php?codArquivo=94 ;

Chicago Manual of Style (16th Edition):

Ansaloni, Líliam Márcia Silva. “Sínteses e caracterização de nitreto de boro nanoestrutrado com potencialidade de aplicação em cosmetologia.” 2009. Masters Thesis, Centro de Desenvolvimento da Tecnologia Nuclear. Accessed August 08, 2020. http://www.bdtd.cdtn.br//tde_busca/arquivo.php?codArquivo=94 ;.

MLA Handbook (7th Edition):

Ansaloni, Líliam Márcia Silva. “Sínteses e caracterização de nitreto de boro nanoestrutrado com potencialidade de aplicação em cosmetologia.” 2009. Web. 08 Aug 2020.

Vancouver:

Ansaloni LMS. Sínteses e caracterização de nitreto de boro nanoestrutrado com potencialidade de aplicação em cosmetologia. [Internet] [Masters thesis]. Centro de Desenvolvimento da Tecnologia Nuclear; 2009. [cited 2020 Aug 08]. Available from: http://www.bdtd.cdtn.br//tde_busca/arquivo.php?codArquivo=94 ;.

Council of Science Editors:

Ansaloni LMS. Sínteses e caracterização de nitreto de boro nanoestrutrado com potencialidade de aplicação em cosmetologia. [Masters Thesis]. Centro de Desenvolvimento da Tecnologia Nuclear; 2009. Available from: http://www.bdtd.cdtn.br//tde_busca/arquivo.php?codArquivo=94 ;

19. Anderson Augusto Freitas. Síntese e caracterização estrutural e magnética de nanoestruturas a base de nitreto de boro.

Degree: Master, 2012, Centro de Desenvolvimento da Tecnologia Nuclear

O nitreto de boro hexagonal (h-BN) tem uma estrutura cristalina similar ao grafite e é conhecido como um importante material cerâmico com propriedades interessantes, tais… (more)

Subjects/Keywords: Materiais; Nitreto de boro; Nanoestruturas; Analise química estrutural; Boron nitrides; Nanostructures; Structural chemical analysis; Materials; FISICA DA MATERIA CONDENSADA

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APA (6th Edition):

Freitas, A. A. (2012). Síntese e caracterização estrutural e magnética de nanoestruturas a base de nitreto de boro. (Masters Thesis). Centro de Desenvolvimento da Tecnologia Nuclear. Retrieved from http://www.bdtd.cdtn.br//tde_busca/arquivo.php?codArquivo=208 ;

Chicago Manual of Style (16th Edition):

Freitas, Anderson Augusto. “Síntese e caracterização estrutural e magnética de nanoestruturas a base de nitreto de boro.” 2012. Masters Thesis, Centro de Desenvolvimento da Tecnologia Nuclear. Accessed August 08, 2020. http://www.bdtd.cdtn.br//tde_busca/arquivo.php?codArquivo=208 ;.

MLA Handbook (7th Edition):

Freitas, Anderson Augusto. “Síntese e caracterização estrutural e magnética de nanoestruturas a base de nitreto de boro.” 2012. Web. 08 Aug 2020.

Vancouver:

Freitas AA. Síntese e caracterização estrutural e magnética de nanoestruturas a base de nitreto de boro. [Internet] [Masters thesis]. Centro de Desenvolvimento da Tecnologia Nuclear; 2012. [cited 2020 Aug 08]. Available from: http://www.bdtd.cdtn.br//tde_busca/arquivo.php?codArquivo=208 ;.

Council of Science Editors:

Freitas AA. Síntese e caracterização estrutural e magnética de nanoestruturas a base de nitreto de boro. [Masters Thesis]. Centro de Desenvolvimento da Tecnologia Nuclear; 2012. Available from: http://www.bdtd.cdtn.br//tde_busca/arquivo.php?codArquivo=208 ;

20. Du, Li. Bulk crystal growth, characterization and thermodynamic analysis of aluminum nitride and related nitrides.

Degree: PhD, Department of Chemical Engineering, 2011, Kansas State University

 The sublimation recondensation crystal growth of aluminum nitride, titanium nitride, and yttrium nitride were explored experimentally and theoretically. Single crystals of these nitrides are potentially… (more)

Subjects/Keywords: Bulk Crystal Growth; Thermodynamic Analysis; Aluminum Nitride; Transition Metal Nitrides; Chemical Engineering (0542); Materials Science (0794)

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APA (6th Edition):

Du, L. (2011). Bulk crystal growth, characterization and thermodynamic analysis of aluminum nitride and related nitrides. (Doctoral Dissertation). Kansas State University. Retrieved from http://hdl.handle.net/2097/8625

Chicago Manual of Style (16th Edition):

Du, Li. “Bulk crystal growth, characterization and thermodynamic analysis of aluminum nitride and related nitrides.” 2011. Doctoral Dissertation, Kansas State University. Accessed August 08, 2020. http://hdl.handle.net/2097/8625.

MLA Handbook (7th Edition):

Du, Li. “Bulk crystal growth, characterization and thermodynamic analysis of aluminum nitride and related nitrides.” 2011. Web. 08 Aug 2020.

Vancouver:

Du L. Bulk crystal growth, characterization and thermodynamic analysis of aluminum nitride and related nitrides. [Internet] [Doctoral dissertation]. Kansas State University; 2011. [cited 2020 Aug 08]. Available from: http://hdl.handle.net/2097/8625.

Council of Science Editors:

Du L. Bulk crystal growth, characterization and thermodynamic analysis of aluminum nitride and related nitrides. [Doctoral Dissertation]. Kansas State University; 2011. Available from: http://hdl.handle.net/2097/8625


University of Surrey

21. Almeida, Serrita Avril. Modification of amorphous silicon nitride surfaces by ion implantation of gallium.

Degree: PhD, 1999, University of Surrey

 This study was undertaken to investigate the possibility of synthesis of nitride based semiconductors. To this end hydrogenated amorphous silicon nitride (a-SiNx:Hy) has been deposited… (more)

Subjects/Keywords: 530.41; SILICON NITRIDES; DOPED MATERIALS; GALLIUM; AMORPHOUS STATE; SURFACES

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APA (6th Edition):

Almeida, S. A. (1999). Modification of amorphous silicon nitride surfaces by ion implantation of gallium. (Doctoral Dissertation). University of Surrey. Retrieved from http://epubs.surrey.ac.uk/843307/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300366

Chicago Manual of Style (16th Edition):

Almeida, Serrita Avril. “Modification of amorphous silicon nitride surfaces by ion implantation of gallium.” 1999. Doctoral Dissertation, University of Surrey. Accessed August 08, 2020. http://epubs.surrey.ac.uk/843307/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300366.

MLA Handbook (7th Edition):

Almeida, Serrita Avril. “Modification of amorphous silicon nitride surfaces by ion implantation of gallium.” 1999. Web. 08 Aug 2020.

Vancouver:

Almeida SA. Modification of amorphous silicon nitride surfaces by ion implantation of gallium. [Internet] [Doctoral dissertation]. University of Surrey; 1999. [cited 2020 Aug 08]. Available from: http://epubs.surrey.ac.uk/843307/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300366.

Council of Science Editors:

Almeida SA. Modification of amorphous silicon nitride surfaces by ion implantation of gallium. [Doctoral Dissertation]. University of Surrey; 1999. Available from: http://epubs.surrey.ac.uk/843307/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300366

22. Henck, Hugo. Hétérostructures de van der Waals à base de Nitrure : Nitride based van der Waals heterostructures.

Degree: Docteur es, Physique, 2017, Université Paris-Saclay (ComUE)

Le sujet de cette thèse est à l’interface entre l’étude de composés à base de nitrure et des structures émergeantes formées par les matériaux bidimensionnels… (more)

Subjects/Keywords: Matériaux 2D; Hétérostructures; Van der Waals; Nitrures; Jonctions 2D/3D; 2D Materials; Heterostructures; Van der Waals; Nitrides; 2D/3D Jonctions

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APA (6th Edition):

Henck, H. (2017). Hétérostructures de van der Waals à base de Nitrure : Nitride based van der Waals heterostructures. (Doctoral Dissertation). Université Paris-Saclay (ComUE). Retrieved from http://www.theses.fr/2017SACLS319

Chicago Manual of Style (16th Edition):

Henck, Hugo. “Hétérostructures de van der Waals à base de Nitrure : Nitride based van der Waals heterostructures.” 2017. Doctoral Dissertation, Université Paris-Saclay (ComUE). Accessed August 08, 2020. http://www.theses.fr/2017SACLS319.

MLA Handbook (7th Edition):

Henck, Hugo. “Hétérostructures de van der Waals à base de Nitrure : Nitride based van der Waals heterostructures.” 2017. Web. 08 Aug 2020.

Vancouver:

Henck H. Hétérostructures de van der Waals à base de Nitrure : Nitride based van der Waals heterostructures. [Internet] [Doctoral dissertation]. Université Paris-Saclay (ComUE); 2017. [cited 2020 Aug 08]. Available from: http://www.theses.fr/2017SACLS319.

Council of Science Editors:

Henck H. Hétérostructures de van der Waals à base de Nitrure : Nitride based van der Waals heterostructures. [Doctoral Dissertation]. Université Paris-Saclay (ComUE); 2017. Available from: http://www.theses.fr/2017SACLS319

23. Sarwar, ATM Golam. Extreme Band Engineering of III-Nitride Nanowire Heterostructures for Electronic and Photonic Application.

Degree: PhD, Electrical and Computer Engineering, 2016, The Ohio State University

 Bottom-up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched… (more)

Subjects/Keywords: Electrical Engineering; Materials Science; Nanotechnology; III-Nitrides, Nanowires, Nanostructures, LEDs

…Research Associate Electrical and Computer Engineering Materials Science and Engineering The Ohio… …x29; Perovskite Nitride Oxides”, Chemistry of Materials 27, 2414-2420 (2015). ATM… …Optoelectronic Materials Nanotechnology xiii Table of Contents Page Abstract… …misfit (indicated for each curve), calculated for elastically isotropic materials… …different polar materials (GaN and AlN in this case)… 

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APA (6th Edition):

Sarwar, A. G. (2016). Extreme Band Engineering of III-Nitride Nanowire Heterostructures for Electronic and Photonic Application. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1451358029

Chicago Manual of Style (16th Edition):

Sarwar, ATM Golam. “Extreme Band Engineering of III-Nitride Nanowire Heterostructures for Electronic and Photonic Application.” 2016. Doctoral Dissertation, The Ohio State University. Accessed August 08, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1451358029.

MLA Handbook (7th Edition):

Sarwar, ATM Golam. “Extreme Band Engineering of III-Nitride Nanowire Heterostructures for Electronic and Photonic Application.” 2016. Web. 08 Aug 2020.

Vancouver:

Sarwar AG. Extreme Band Engineering of III-Nitride Nanowire Heterostructures for Electronic and Photonic Application. [Internet] [Doctoral dissertation]. The Ohio State University; 2016. [cited 2020 Aug 08]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1451358029.

Council of Science Editors:

Sarwar AG. Extreme Band Engineering of III-Nitride Nanowire Heterostructures for Electronic and Photonic Application. [Doctoral Dissertation]. The Ohio State University; 2016. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1451358029


Michigan Technological University

24. Wei, Wei. HIGHLY EFFICIENT ELECTRODE MATERIALS AND THEIR APPLICATIONS IN SOLAR CELLS.

Degree: PhD, Department of Materials Science and Engineering, 2017, Michigan Technological University

  Dye-sensitized solar cells (DSSCs) present promising low-cost alternatives to the conventional Silicon (Si)-based solar cells. The counter electrode (CE), as an important component of… (more)

Subjects/Keywords: Dye-sensitized solar cells; metal nitrides; conductive polymer; transition metal dichalcogenides; carbon nanomaterials; Catalysis and Reaction Engineering; Nanoscience and Nanotechnology; Other Materials Science and Engineering

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APA (6th Edition):

Wei, W. (2017). HIGHLY EFFICIENT ELECTRODE MATERIALS AND THEIR APPLICATIONS IN SOLAR CELLS. (Doctoral Dissertation). Michigan Technological University. Retrieved from http://digitalcommons.mtu.edu/etdr/474

Chicago Manual of Style (16th Edition):

Wei, Wei. “HIGHLY EFFICIENT ELECTRODE MATERIALS AND THEIR APPLICATIONS IN SOLAR CELLS.” 2017. Doctoral Dissertation, Michigan Technological University. Accessed August 08, 2020. http://digitalcommons.mtu.edu/etdr/474.

MLA Handbook (7th Edition):

Wei, Wei. “HIGHLY EFFICIENT ELECTRODE MATERIALS AND THEIR APPLICATIONS IN SOLAR CELLS.” 2017. Web. 08 Aug 2020.

Vancouver:

Wei W. HIGHLY EFFICIENT ELECTRODE MATERIALS AND THEIR APPLICATIONS IN SOLAR CELLS. [Internet] [Doctoral dissertation]. Michigan Technological University; 2017. [cited 2020 Aug 08]. Available from: http://digitalcommons.mtu.edu/etdr/474.

Council of Science Editors:

Wei W. HIGHLY EFFICIENT ELECTRODE MATERIALS AND THEIR APPLICATIONS IN SOLAR CELLS. [Doctoral Dissertation]. Michigan Technological University; 2017. Available from: http://digitalcommons.mtu.edu/etdr/474

25. Cao, Xiang||曹, 祥||ソウ, シャン. Growth and Characterization of Zinc-Based Nitride Thin Films as Versatile Semiconductors : 多目的半導体としての亜鉛系窒化物薄膜の成長と評価; タモクテキ ハンドウタイ トシテノアエンケイ チッカブツ ハクマク ノ セイチョウ ト ヒョウカ.

Degree: 博士(工学), 2017, Chubu University / 中部大学

Subjects/Keywords: zinc-based semiconductors; nitrides materials; earth-abundant elements; potential transparent semiconductors; versatile applications

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APA (6th Edition):

Cao, Xiang||曹, 祥||ソウ, . (2017). Growth and Characterization of Zinc-Based Nitride Thin Films as Versatile Semiconductors : 多目的半導体としての亜鉛系窒化物薄膜の成長と評価; タモクテキ ハンドウタイ トシテノアエンケイ チッカブツ ハクマク ノ セイチョウ ト ヒョウカ. (Thesis). Chubu University / 中部大学. Retrieved from http://opac.bliss.chubu.ac.jp/e-Lib/ctlsrh.do?bibid=XD17000004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cao, Xiang||曹, 祥||ソウ, シャン. “Growth and Characterization of Zinc-Based Nitride Thin Films as Versatile Semiconductors : 多目的半導体としての亜鉛系窒化物薄膜の成長と評価; タモクテキ ハンドウタイ トシテノアエンケイ チッカブツ ハクマク ノ セイチョウ ト ヒョウカ.” 2017. Thesis, Chubu University / 中部大学. Accessed August 08, 2020. http://opac.bliss.chubu.ac.jp/e-Lib/ctlsrh.do?bibid=XD17000004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cao, Xiang||曹, 祥||ソウ, シャン. “Growth and Characterization of Zinc-Based Nitride Thin Films as Versatile Semiconductors : 多目的半導体としての亜鉛系窒化物薄膜の成長と評価; タモクテキ ハンドウタイ トシテノアエンケイ チッカブツ ハクマク ノ セイチョウ ト ヒョウカ.” 2017. Web. 08 Aug 2020.

Vancouver:

Cao, Xiang||曹, 祥||ソウ . Growth and Characterization of Zinc-Based Nitride Thin Films as Versatile Semiconductors : 多目的半導体としての亜鉛系窒化物薄膜の成長と評価; タモクテキ ハンドウタイ トシテノアエンケイ チッカブツ ハクマク ノ セイチョウ ト ヒョウカ. [Internet] [Thesis]. Chubu University / 中部大学; 2017. [cited 2020 Aug 08]. Available from: http://opac.bliss.chubu.ac.jp/e-Lib/ctlsrh.do?bibid=XD17000004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cao, Xiang||曹, 祥||ソウ . Growth and Characterization of Zinc-Based Nitride Thin Films as Versatile Semiconductors : 多目的半導体としての亜鉛系窒化物薄膜の成長と評価; タモクテキ ハンドウタイ トシテノアエンケイ チッカブツ ハクマク ノ セイチョウ ト ヒョウカ. [Thesis]. Chubu University / 中部大学; 2017. Available from: http://opac.bliss.chubu.ac.jp/e-Lib/ctlsrh.do?bibid=XD17000004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Surrey

26. Pearson, Gary S. Strain Green's functions for buried quantum dots.

Degree: PhD, 2001, University of Surrey

Subjects/Keywords: 530.41; STRAINS; ELASTICITY; GREEN FUNCTION; NITRIDES; PIEZOELECTRICITY; MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pearson, G. S. (2001). Strain Green's functions for buried quantum dots. (Doctoral Dissertation). University of Surrey. Retrieved from http://epubs.surrey.ac.uk/2385/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341377

Chicago Manual of Style (16th Edition):

Pearson, Gary S. “Strain Green's functions for buried quantum dots.” 2001. Doctoral Dissertation, University of Surrey. Accessed August 08, 2020. http://epubs.surrey.ac.uk/2385/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341377.

MLA Handbook (7th Edition):

Pearson, Gary S. “Strain Green's functions for buried quantum dots.” 2001. Web. 08 Aug 2020.

Vancouver:

Pearson GS. Strain Green's functions for buried quantum dots. [Internet] [Doctoral dissertation]. University of Surrey; 2001. [cited 2020 Aug 08]. Available from: http://epubs.surrey.ac.uk/2385/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341377.

Council of Science Editors:

Pearson GS. Strain Green's functions for buried quantum dots. [Doctoral Dissertation]. University of Surrey; 2001. Available from: http://epubs.surrey.ac.uk/2385/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341377

27. Zeng, Guosong. Investigation of Wear Mechanism of Gallium Nitride.

Degree: PhD, Mechanical Engineering, 2018, Lehigh University

 The optoelectronic properties of gallium nitride (GaN) has been extensively studied for decades, which has facilitated its application in many different areas, cementing it as… (more)

Subjects/Keywords: Band Bending; III-Nitrides; Materials Tribology; Surface Chemistry; Mechanical Engineering

Materials: MOCVD-Growth of III-Nitrides ....................................................... 20… …underneath the surface. 19 2 Materials: MOCVD-Growth of III-Nitrides The electronics and… …3 1.1 Materials Tribology… …3 1.2 Background of III-Nitrides… …5 1.2.1 Optoelectronic Properties of III-Nitrides… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zeng, G. (2018). Investigation of Wear Mechanism of Gallium Nitride. (Doctoral Dissertation). Lehigh University. Retrieved from https://preserve.lehigh.edu/etd/2995

Chicago Manual of Style (16th Edition):

Zeng, Guosong. “Investigation of Wear Mechanism of Gallium Nitride.” 2018. Doctoral Dissertation, Lehigh University. Accessed August 08, 2020. https://preserve.lehigh.edu/etd/2995.

MLA Handbook (7th Edition):

Zeng, Guosong. “Investigation of Wear Mechanism of Gallium Nitride.” 2018. Web. 08 Aug 2020.

Vancouver:

Zeng G. Investigation of Wear Mechanism of Gallium Nitride. [Internet] [Doctoral dissertation]. Lehigh University; 2018. [cited 2020 Aug 08]. Available from: https://preserve.lehigh.edu/etd/2995.

Council of Science Editors:

Zeng G. Investigation of Wear Mechanism of Gallium Nitride. [Doctoral Dissertation]. Lehigh University; 2018. Available from: https://preserve.lehigh.edu/etd/2995


University of Florida

28. Gila, Brent P. Growth and characterization of dielectric materials for wide bandgap semiconductors.

Degree: PhD, Materials Science and Engineering, 2000, University of Florida

Subjects/Keywords: Aluminum; Capacitance; Dielectric materials; Electric potential; Electrons; Gadolinium; Gallium; Nitrides; Oxides; Semiconductors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gila, B. P. (2000). Growth and characterization of dielectric materials for wide bandgap semiconductors. (Doctoral Dissertation). University of Florida. Retrieved from https://ufdc.ufl.edu/AA00032456

Chicago Manual of Style (16th Edition):

Gila, Brent P. “Growth and characterization of dielectric materials for wide bandgap semiconductors.” 2000. Doctoral Dissertation, University of Florida. Accessed August 08, 2020. https://ufdc.ufl.edu/AA00032456.

MLA Handbook (7th Edition):

Gila, Brent P. “Growth and characterization of dielectric materials for wide bandgap semiconductors.” 2000. Web. 08 Aug 2020.

Vancouver:

Gila BP. Growth and characterization of dielectric materials for wide bandgap semiconductors. [Internet] [Doctoral dissertation]. University of Florida; 2000. [cited 2020 Aug 08]. Available from: https://ufdc.ufl.edu/AA00032456.

Council of Science Editors:

Gila BP. Growth and characterization of dielectric materials for wide bandgap semiconductors. [Doctoral Dissertation]. University of Florida; 2000. Available from: https://ufdc.ufl.edu/AA00032456


University of Arizona

29. Newberg, Carl Edward, 1962-. Materials research on metallized aluminum-nitride for microelectronic packaging .

Degree: 1988, University of Arizona

 The use of aluminum nitride as a substrate material for microelectronics is examined. A brief look at thermal, mechanical, and electrical properties of aluminum nitride… (more)

Subjects/Keywords: Aluminum compounds.; Nitrides.; Integrated circuits  – Materials  – Electric properties.; Integrated circuits  – Materials  – Mechanical properties.; Integrated circuits  – Materials  – Thermal properties.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Newberg, Carl Edward, 1. (1988). Materials research on metallized aluminum-nitride for microelectronic packaging . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/276913

Chicago Manual of Style (16th Edition):

Newberg, Carl Edward, 1962-. “Materials research on metallized aluminum-nitride for microelectronic packaging .” 1988. Masters Thesis, University of Arizona. Accessed August 08, 2020. http://hdl.handle.net/10150/276913.

MLA Handbook (7th Edition):

Newberg, Carl Edward, 1962-. “Materials research on metallized aluminum-nitride for microelectronic packaging .” 1988. Web. 08 Aug 2020.

Vancouver:

Newberg, Carl Edward 1. Materials research on metallized aluminum-nitride for microelectronic packaging . [Internet] [Masters thesis]. University of Arizona; 1988. [cited 2020 Aug 08]. Available from: http://hdl.handle.net/10150/276913.

Council of Science Editors:

Newberg, Carl Edward 1. Materials research on metallized aluminum-nitride for microelectronic packaging . [Masters Thesis]. University of Arizona; 1988. Available from: http://hdl.handle.net/10150/276913


Universitat de Barcelona

30. Domènech i Amador, Núria. Phonons in III-nitride thinfilms, bulk and nanowires: a closer look into InN vibrational properties.

Degree: Departament d'Electrònica, 2015, Universitat de Barcelona

 Aquesta tesi està dedicada a l’estudi de les interaccions dels fonons en nitrur d'indi (InN) i en semiconductors del sistema (In.Ga)N amb estructura wurtzita. Amb… (more)

Subjects/Keywords: Electrònica; Electrónica; Electronics; Pel·lícules fines; Películas delgadas; Thin films; Materials nanoestructurats; Materiales nanoestructurados; Nanostructured materials; Espectroscòpia Raman; Espectroscopia Raman; Raman spectroscopy; Espectres de vibració; Espectros de vibración; Vibrational spectra; Nitrurs; Nitruros; Nitrides; Ciències Experimentals i Matemàtiques; 53

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Domènech i Amador, N. (2015). Phonons in III-nitride thinfilms, bulk and nanowires: a closer look into InN vibrational properties. (Thesis). Universitat de Barcelona. Retrieved from http://hdl.handle.net/10803/348867

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Domènech i Amador, Núria. “Phonons in III-nitride thinfilms, bulk and nanowires: a closer look into InN vibrational properties.” 2015. Thesis, Universitat de Barcelona. Accessed August 08, 2020. http://hdl.handle.net/10803/348867.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Domènech i Amador, Núria. “Phonons in III-nitride thinfilms, bulk and nanowires: a closer look into InN vibrational properties.” 2015. Web. 08 Aug 2020.

Vancouver:

Domènech i Amador N. Phonons in III-nitride thinfilms, bulk and nanowires: a closer look into InN vibrational properties. [Internet] [Thesis]. Universitat de Barcelona; 2015. [cited 2020 Aug 08]. Available from: http://hdl.handle.net/10803/348867.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Domènech i Amador N. Phonons in III-nitride thinfilms, bulk and nanowires: a closer look into InN vibrational properties. [Thesis]. Universitat de Barcelona; 2015. Available from: http://hdl.handle.net/10803/348867

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2]

.