Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for subject:(mosfet). Showing records 1 – 30 of 505 total matches.

[1] [2] [3] [4] [5] … [17]

Search Limiters

Last 2 Years | English Only

Degrees

Levels

Languages

Country

▼ Search Limiters


Université Montpellier II

1. Constant, Aurore. SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC.

Degree: Docteur es, Physique, 2011, Université Montpellier II

De nos jours, les dispositifs d'électroniques de puissance sont principalement basés sur la technologie silicium qui est mature et très bien établie. Toutefois, le silicium… (more)

Subjects/Keywords: SiC; Oxydation; Mosfet; SiC; Oxidation; Mosfet

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Constant, A. (2011). SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2011MON20061

Chicago Manual of Style (16th Edition):

Constant, Aurore. “SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC.” 2011. Doctoral Dissertation, Université Montpellier II. Accessed October 27, 2020. http://www.theses.fr/2011MON20061.

MLA Handbook (7th Edition):

Constant, Aurore. “SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC.” 2011. Web. 27 Oct 2020.

Vancouver:

Constant A. SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC. [Internet] [Doctoral dissertation]. Université Montpellier II; 2011. [cited 2020 Oct 27]. Available from: http://www.theses.fr/2011MON20061.

Council of Science Editors:

Constant A. SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC. [Doctoral Dissertation]. Université Montpellier II; 2011. Available from: http://www.theses.fr/2011MON20061

2. Maréchal, Aurélien. Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis : Capacité métal-oxyde-semiconducteur pour le transistor en diamant : simulation, fabrication et caractérisation électrique.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Université Grenoble Alpes (ComUE)

 Plus de deux décennies de progrès technologiques dans le contrôle de la qualité de la croissance, du dopage et dans la conception de composants ont… (more)

Subjects/Keywords: Mosfet; Diamant; Simulation; Mosfet; Diamond; Simulation; 620

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Maréchal, A. (2015). Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis : Capacité métal-oxyde-semiconducteur pour le transistor en diamant : simulation, fabrication et caractérisation électrique. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2015GREAT094

Chicago Manual of Style (16th Edition):

Maréchal, Aurélien. “Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis : Capacité métal-oxyde-semiconducteur pour le transistor en diamant : simulation, fabrication et caractérisation électrique.” 2015. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed October 27, 2020. http://www.theses.fr/2015GREAT094.

MLA Handbook (7th Edition):

Maréchal, Aurélien. “Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis : Capacité métal-oxyde-semiconducteur pour le transistor en diamant : simulation, fabrication et caractérisation électrique.” 2015. Web. 27 Oct 2020.

Vancouver:

Maréchal A. Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis : Capacité métal-oxyde-semiconducteur pour le transistor en diamant : simulation, fabrication et caractérisation électrique. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2015. [cited 2020 Oct 27]. Available from: http://www.theses.fr/2015GREAT094.

Council of Science Editors:

Maréchal A. Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis : Capacité métal-oxyde-semiconducteur pour le transistor en diamant : simulation, fabrication et caractérisation électrique. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2015. Available from: http://www.theses.fr/2015GREAT094


University of Alberta

3. Bothe, Kyle M. Enhancement-mode Polar Sourced Gallium Nitride MOSFET.

Degree: PhD, Department of Electrical and Computer Engineering, 2015, University of Alberta

 All commercially fabricated Gallium Nitride (GaN) based power transistors to date have been heterojunction field effect transistors (HFET). The major down fall of this design… (more)

Subjects/Keywords: GaN MOSFET; PEALD

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bothe, K. M. (2015). Enhancement-mode Polar Sourced Gallium Nitride MOSFET. (Doctoral Dissertation). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/cc534fp125

Chicago Manual of Style (16th Edition):

Bothe, Kyle M. “Enhancement-mode Polar Sourced Gallium Nitride MOSFET.” 2015. Doctoral Dissertation, University of Alberta. Accessed October 27, 2020. https://era.library.ualberta.ca/files/cc534fp125.

MLA Handbook (7th Edition):

Bothe, Kyle M. “Enhancement-mode Polar Sourced Gallium Nitride MOSFET.” 2015. Web. 27 Oct 2020.

Vancouver:

Bothe KM. Enhancement-mode Polar Sourced Gallium Nitride MOSFET. [Internet] [Doctoral dissertation]. University of Alberta; 2015. [cited 2020 Oct 27]. Available from: https://era.library.ualberta.ca/files/cc534fp125.

Council of Science Editors:

Bothe KM. Enhancement-mode Polar Sourced Gallium Nitride MOSFET. [Doctoral Dissertation]. University of Alberta; 2015. Available from: https://era.library.ualberta.ca/files/cc534fp125


McMaster University

4. Chen, Xuesong. Noise Characterization and Modeling of Nanoscale MOSFETs.

Degree: PhD, 2017, McMaster University

High-frequency noise modeling and characterization of nanoscale MOSFETs are essential driving forces for highly scaled CMOS technology to be used in radio-frequency applications. Continuous downscaling… (more)

Subjects/Keywords: Microelectronics; MOSFET; Noise

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, X. (2017). Noise Characterization and Modeling of Nanoscale MOSFETs. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/22004

Chicago Manual of Style (16th Edition):

Chen, Xuesong. “Noise Characterization and Modeling of Nanoscale MOSFETs.” 2017. Doctoral Dissertation, McMaster University. Accessed October 27, 2020. http://hdl.handle.net/11375/22004.

MLA Handbook (7th Edition):

Chen, Xuesong. “Noise Characterization and Modeling of Nanoscale MOSFETs.” 2017. Web. 27 Oct 2020.

Vancouver:

Chen X. Noise Characterization and Modeling of Nanoscale MOSFETs. [Internet] [Doctoral dissertation]. McMaster University; 2017. [cited 2020 Oct 27]. Available from: http://hdl.handle.net/11375/22004.

Council of Science Editors:

Chen X. Noise Characterization and Modeling of Nanoscale MOSFETs. [Doctoral Dissertation]. McMaster University; 2017. Available from: http://hdl.handle.net/11375/22004

5. GONÇALVES FILHO, Luiz Carlos. Resposta com a dose de MOSFET canal N comercial submetido a feixes raios X filtrado .

Degree: 2018, Universidade Federal de Pernambuco

 O MOSFET pode operar como um detector de radiação em feixes de radioterapia, para tratamento de câncer, por exemplo. Esse dispositivo eletrônico pode atuar como… (more)

Subjects/Keywords: MOSFET; Radiação; Dosímetro

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

GONÇALVES FILHO, L. C. (2018). Resposta com a dose de MOSFET canal N comercial submetido a feixes raios X filtrado . (Masters Thesis). Universidade Federal de Pernambuco. Retrieved from https://repositorio.ufpe.br/handle/123456789/30566

Chicago Manual of Style (16th Edition):

GONÇALVES FILHO, Luiz Carlos. “Resposta com a dose de MOSFET canal N comercial submetido a feixes raios X filtrado .” 2018. Masters Thesis, Universidade Federal de Pernambuco. Accessed October 27, 2020. https://repositorio.ufpe.br/handle/123456789/30566.

MLA Handbook (7th Edition):

GONÇALVES FILHO, Luiz Carlos. “Resposta com a dose de MOSFET canal N comercial submetido a feixes raios X filtrado .” 2018. Web. 27 Oct 2020.

Vancouver:

GONÇALVES FILHO LC. Resposta com a dose de MOSFET canal N comercial submetido a feixes raios X filtrado . [Internet] [Masters thesis]. Universidade Federal de Pernambuco; 2018. [cited 2020 Oct 27]. Available from: https://repositorio.ufpe.br/handle/123456789/30566.

Council of Science Editors:

GONÇALVES FILHO LC. Resposta com a dose de MOSFET canal N comercial submetido a feixes raios X filtrado . [Masters Thesis]. Universidade Federal de Pernambuco; 2018. Available from: https://repositorio.ufpe.br/handle/123456789/30566


Tampereen ammattikorkeakoulu

6. Salonen, Janne. IGBT-transistori.

Degree: 2013, Tampereen ammattikorkeakoulu

Työn tavoitteena on tutustua IGBT-transistorin toimintaan. Sain aiheen opinnäytetyöhön opettajan vinkistä, ja sattumalta luin myös Tekniikan Maailma-lehteä, jossa kerrottiin sähkövetureista. Sähkövetureissa käytettiin IGBT-transistoria sähkömoottorin ohjaukseen.… (more)

Subjects/Keywords: IGBT-transistori; MOSFET

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Salonen, J. (2013). IGBT-transistori. (Thesis). Tampereen ammattikorkeakoulu. Retrieved from http://www.theseus.fi/handle/10024/68395

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Salonen, Janne. “IGBT-transistori.” 2013. Thesis, Tampereen ammattikorkeakoulu. Accessed October 27, 2020. http://www.theseus.fi/handle/10024/68395.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Salonen, Janne. “IGBT-transistori.” 2013. Web. 27 Oct 2020.

Vancouver:

Salonen J. IGBT-transistori. [Internet] [Thesis]. Tampereen ammattikorkeakoulu; 2013. [cited 2020 Oct 27]. Available from: http://www.theseus.fi/handle/10024/68395.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Salonen J. IGBT-transistori. [Thesis]. Tampereen ammattikorkeakoulu; 2013. Available from: http://www.theseus.fi/handle/10024/68395

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

7. Chen, Jung-hsiang. The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain.

Degree: Master, Physics, 2009, NSYSU

 Abstract The tendency to manufacture of semiconductor is to minimize the size of device. With the size was minimized, the number of transistor on the… (more)

Subjects/Keywords: POWER-MOSFET; Breakdown Voltage; Reliability

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, J. (2009). The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0831109-204106

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Jung-hsiang. “The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain.” 2009. Thesis, NSYSU. Accessed October 27, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0831109-204106.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Jung-hsiang. “The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain.” 2009. Web. 27 Oct 2020.

Vancouver:

Chen J. The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain. [Internet] [Thesis]. NSYSU; 2009. [cited 2020 Oct 27]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0831109-204106.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen J. The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0831109-204106

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

8. Pereira, Lenon Mendes. Caracterização do MOSFET MOskin para dosimetria em tomografia computadorizada .

Degree: 2015, Universidade Federal de Pernambuco

 Este trabalho visa caracterizar o MOSkin para dosimetria em tomografia computadorizada. Desta forma, a resposta do detector foi avaliada para as qualidades de referência RQT… (more)

Subjects/Keywords: MOSkin; MOSFET; Tomografia computadorizada; Dosimetria

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pereira, L. M. (2015). Caracterização do MOSFET MOskin para dosimetria em tomografia computadorizada . (Thesis). Universidade Federal de Pernambuco. Retrieved from http://repositorio.ufpe.br/handle/123456789/14936

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pereira, Lenon Mendes. “Caracterização do MOSFET MOskin para dosimetria em tomografia computadorizada .” 2015. Thesis, Universidade Federal de Pernambuco. Accessed October 27, 2020. http://repositorio.ufpe.br/handle/123456789/14936.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pereira, Lenon Mendes. “Caracterização do MOSFET MOskin para dosimetria em tomografia computadorizada .” 2015. Web. 27 Oct 2020.

Vancouver:

Pereira LM. Caracterização do MOSFET MOskin para dosimetria em tomografia computadorizada . [Internet] [Thesis]. Universidade Federal de Pernambuco; 2015. [cited 2020 Oct 27]. Available from: http://repositorio.ufpe.br/handle/123456789/14936.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pereira LM. Caracterização do MOSFET MOskin para dosimetria em tomografia computadorizada . [Thesis]. Universidade Federal de Pernambuco; 2015. Available from: http://repositorio.ufpe.br/handle/123456789/14936

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

9. Madani, Hassan. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.

Degree: 2013, Université M'Hamed Bougara Boumerdès

107 p. : ill. ; 30 cm

Le but de développer des méthodes de caractérisations fiables est de prévoir la dégradation des circuits intégrés fonctionnement… (more)

Subjects/Keywords: Irradiation; MOS (électronique); Transistors MOSFET

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Madani, H. (2013). Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080123456789/1463

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Madani, Hassan. “Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.” 2013. Thesis, Université M'Hamed Bougara Boumerdès. Accessed October 27, 2020. http://dlibrary.univ-boumerdes.dz:8080123456789/1463.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Madani, Hassan. “Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.” 2013. Web. 27 Oct 2020.

Vancouver:

Madani H. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2013. [cited 2020 Oct 27]. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1463.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Madani H. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. [Thesis]. Université M'Hamed Bougara Boumerdès; 2013. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1463

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

10. Fertig, Gregory J. Evaluation of MOSFETs for Terahertz Detector Arrays.

Degree: MS, Chester F. Carlson Center for Imaging Science (COS), 2014, Rochester Institute of Technology

  The terahertz (THz) region of the electromagnetic spectrum is one of the last remaining regions that has yet to be fully characterized. THz imaging… (more)

Subjects/Keywords: Antenna; CMOS; FPA; MOSFET; Terahertz

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fertig, G. J. (2014). Evaluation of MOSFETs for Terahertz Detector Arrays. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/8302

Chicago Manual of Style (16th Edition):

Fertig, Gregory J. “Evaluation of MOSFETs for Terahertz Detector Arrays.” 2014. Masters Thesis, Rochester Institute of Technology. Accessed October 27, 2020. https://scholarworks.rit.edu/theses/8302.

MLA Handbook (7th Edition):

Fertig, Gregory J. “Evaluation of MOSFETs for Terahertz Detector Arrays.” 2014. Web. 27 Oct 2020.

Vancouver:

Fertig GJ. Evaluation of MOSFETs for Terahertz Detector Arrays. [Internet] [Masters thesis]. Rochester Institute of Technology; 2014. [cited 2020 Oct 27]. Available from: https://scholarworks.rit.edu/theses/8302.

Council of Science Editors:

Fertig GJ. Evaluation of MOSFETs for Terahertz Detector Arrays. [Masters Thesis]. Rochester Institute of Technology; 2014. Available from: https://scholarworks.rit.edu/theses/8302

11. Bharanidharan, G. A study on the evaluation of mosfet Detector for in vivo dosimetry; -.

Degree: Science and Humanities, 2014, Anna University

Cancer is one of the dreadful diseases and it is a burgeoning health newlineproblem globally It has been defined as a group of abnormal mass… (more)

Subjects/Keywords: mosfet Detector; Science and humanities

Page 1

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bharanidharan, G. (2014). A study on the evaluation of mosfet Detector for in vivo dosimetry; -. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/26739

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bharanidharan, G. “A study on the evaluation of mosfet Detector for in vivo dosimetry; -.” 2014. Thesis, Anna University. Accessed October 27, 2020. http://shodhganga.inflibnet.ac.in/handle/10603/26739.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bharanidharan, G. “A study on the evaluation of mosfet Detector for in vivo dosimetry; -.” 2014. Web. 27 Oct 2020.

Vancouver:

Bharanidharan G. A study on the evaluation of mosfet Detector for in vivo dosimetry; -. [Internet] [Thesis]. Anna University; 2014. [cited 2020 Oct 27]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/26739.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bharanidharan G. A study on the evaluation of mosfet Detector for in vivo dosimetry; -. [Thesis]. Anna University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/26739

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

12. Madani, Hassan. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.

Degree: 2013, Université M'Hamed Bougara Boumerdès

107 p. : ill. ; 30 cm

Le but de développer des méthodes de caractérisations fiables est de prévoir la dégradation des circuits intégrés fonctionnement… (more)

Subjects/Keywords: Irradiation; MOS (électronique); Transistors MOSFET

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Madani, H. (2013). Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1604

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Madani, Hassan. “Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.” 2013. Thesis, Université M'Hamed Bougara Boumerdès. Accessed October 27, 2020. http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1604.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Madani, Hassan. “Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.” 2013. Web. 27 Oct 2020.

Vancouver:

Madani H. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2013. [cited 2020 Oct 27]. Available from: http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1604.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Madani H. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. [Thesis]. Université M'Hamed Bougara Boumerdès; 2013. Available from: http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1604

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

13. Follman, Jacob Jay. On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs.

Degree: 2013, Penn State University

 We utilize electrically detected magnetic resonance (EDMR) to explore the effects of the negative bias temperature instability (NBTI) in 4H-SiC metal oxide semiconductor field effect… (more)

Subjects/Keywords: NBTI; SiC; MOSFET; EPR; EDMR

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Follman, J. J. (2013). On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/17654

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Follman, Jacob Jay. “On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs.” 2013. Thesis, Penn State University. Accessed October 27, 2020. https://submit-etda.libraries.psu.edu/catalog/17654.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Follman, Jacob Jay. “On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs.” 2013. Web. 27 Oct 2020.

Vancouver:

Follman JJ. On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs. [Internet] [Thesis]. Penn State University; 2013. [cited 2020 Oct 27]. Available from: https://submit-etda.libraries.psu.edu/catalog/17654.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Follman JJ. On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs. [Thesis]. Penn State University; 2013. Available from: https://submit-etda.libraries.psu.edu/catalog/17654

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


King Abdullah University of Science and Technology

14. Alfaraj, Nasir. Reversibly Bistable Flexible Electronics.

Degree: 2015, King Abdullah University of Science and Technology

 Introducing the notion of transformational silicon electronics has paved the way for integrating various applications with silicon-based, modern, high-performance electronic circuits that are mechanically flexible… (more)

Subjects/Keywords: Flexible Electronics; MOSFET; Reversibly Bistable

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Alfaraj, N. (2015). Reversibly Bistable Flexible Electronics. (Thesis). King Abdullah University of Science and Technology. Retrieved from http://hdl.handle.net/10754/553068

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Alfaraj, Nasir. “Reversibly Bistable Flexible Electronics.” 2015. Thesis, King Abdullah University of Science and Technology. Accessed October 27, 2020. http://hdl.handle.net/10754/553068.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Alfaraj, Nasir. “Reversibly Bistable Flexible Electronics.” 2015. Web. 27 Oct 2020.

Vancouver:

Alfaraj N. Reversibly Bistable Flexible Electronics. [Internet] [Thesis]. King Abdullah University of Science and Technology; 2015. [cited 2020 Oct 27]. Available from: http://hdl.handle.net/10754/553068.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Alfaraj N. Reversibly Bistable Flexible Electronics. [Thesis]. King Abdullah University of Science and Technology; 2015. Available from: http://hdl.handle.net/10754/553068

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Cincinnati

15. ARNOLD, MARTIN KEITH, JR. SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW.

Degree: MS, Engineering : Electrical Engineering, 2007, University of Cincinnati

 The purpose of this study is to examine the performance capabilities and scaling behavior of short channel Ge-based n-MOSFETs using a commercial numerical device simulator… (more)

Subjects/Keywords: germanium; mosfet

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

ARNOLD, MARTIN KEITH, J. (2007). SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1175024528

Chicago Manual of Style (16th Edition):

ARNOLD, MARTIN KEITH, JR. “SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW.” 2007. Masters Thesis, University of Cincinnati. Accessed October 27, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1175024528.

MLA Handbook (7th Edition):

ARNOLD, MARTIN KEITH, JR. “SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW.” 2007. Web. 27 Oct 2020.

Vancouver:

ARNOLD, MARTIN KEITH J. SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW. [Internet] [Masters thesis]. University of Cincinnati; 2007. [cited 2020 Oct 27]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1175024528.

Council of Science Editors:

ARNOLD, MARTIN KEITH J. SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW. [Masters Thesis]. University of Cincinnati; 2007. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1175024528

16. Παπαθανάσης, Χαράλαμπος. Measurements of periferal dose in five clinical radiotherapy cases with Mosfet detectors in anthropomorphic phantom.

Degree: 2009, University of Patras

In the current study, we present measurements of peripheral dose that is absorbed by specific radio-sensitive organs outside the radiation field for five clinical cases,… (more)

Subjects/Keywords: MOSFET dosimeters; Peripheral dose; 615.842 4; Ανιχνευτές MOSFET; Περιφερειακή δόση

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Παπαθανάσης, . (2009). Measurements of periferal dose in five clinical radiotherapy cases with Mosfet detectors in anthropomorphic phantom. (Masters Thesis). University of Patras. Retrieved from http://nemertes.lis.upatras.gr/jspui/handle/10889/2545

Chicago Manual of Style (16th Edition):

Παπαθανάσης, Χαράλαμπος. “Measurements of periferal dose in five clinical radiotherapy cases with Mosfet detectors in anthropomorphic phantom.” 2009. Masters Thesis, University of Patras. Accessed October 27, 2020. http://nemertes.lis.upatras.gr/jspui/handle/10889/2545.

MLA Handbook (7th Edition):

Παπαθανάσης, Χαράλαμπος. “Measurements of periferal dose in five clinical radiotherapy cases with Mosfet detectors in anthropomorphic phantom.” 2009. Web. 27 Oct 2020.

Vancouver:

Παπαθανάσης . Measurements of periferal dose in five clinical radiotherapy cases with Mosfet detectors in anthropomorphic phantom. [Internet] [Masters thesis]. University of Patras; 2009. [cited 2020 Oct 27]. Available from: http://nemertes.lis.upatras.gr/jspui/handle/10889/2545.

Council of Science Editors:

Παπαθανάσης . Measurements of periferal dose in five clinical radiotherapy cases with Mosfet detectors in anthropomorphic phantom. [Masters Thesis]. University of Patras; 2009. Available from: http://nemertes.lis.upatras.gr/jspui/handle/10889/2545


Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

17. Karatsori, Theano. Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations.

Degree: 2017, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

 Τhe motivation for this dissertation is two of the main issues brought up by the scaling of new-era devices in contemporary MOSFET design: the development… (more)

Subjects/Keywords: MOSFET τρανζίστορ; Ηλεκτρικός χαρακτηρισμός; Μοντελοποίηση; MOSFET transistor; Electrical characterization; Modeling

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Karatsori, T. (2017). Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations. (Thesis). Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Retrieved from http://hdl.handle.net/10442/hedi/42102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Karatsori, Theano. “Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations.” 2017. Thesis, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Accessed October 27, 2020. http://hdl.handle.net/10442/hedi/42102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Karatsori, Theano. “Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations.” 2017. Web. 27 Oct 2020.

Vancouver:

Karatsori T. Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations. [Internet] [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. [cited 2020 Oct 27]. Available from: http://hdl.handle.net/10442/hedi/42102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Karatsori T. Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations. [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. Available from: http://hdl.handle.net/10442/hedi/42102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

18. Guerfi, Youssouf. Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium : Realization and characterization of vertical silicon nanowires MOS transistors.

Degree: Docteur es, Micro et nanosystèmes, 2015, Université Toulouse III – Paul Sabatier

Afin de poursuivre la réduction d'échelle des transistors MOS, l'industrie des semiconducteurs a su anticiper les limitations de la miniaturisation par l'introduction de nouveaux matériaux… (more)

Subjects/Keywords: MOSFET; Nanoélectronique; Nanofabrication; Nanofils; Silicium; MOSFET; Nanoelectronics; Nanofabrication; Nanowires; Silicon

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Guerfi, Y. (2015). Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium : Realization and characterization of vertical silicon nanowires MOS transistors. (Doctoral Dissertation). Université Toulouse III – Paul Sabatier. Retrieved from http://www.theses.fr/2015TOU30253

Chicago Manual of Style (16th Edition):

Guerfi, Youssouf. “Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium : Realization and characterization of vertical silicon nanowires MOS transistors.” 2015. Doctoral Dissertation, Université Toulouse III – Paul Sabatier. Accessed October 27, 2020. http://www.theses.fr/2015TOU30253.

MLA Handbook (7th Edition):

Guerfi, Youssouf. “Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium : Realization and characterization of vertical silicon nanowires MOS transistors.” 2015. Web. 27 Oct 2020.

Vancouver:

Guerfi Y. Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium : Realization and characterization of vertical silicon nanowires MOS transistors. [Internet] [Doctoral dissertation]. Université Toulouse III – Paul Sabatier; 2015. [cited 2020 Oct 27]. Available from: http://www.theses.fr/2015TOU30253.

Council of Science Editors:

Guerfi Y. Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium : Realization and characterization of vertical silicon nanowires MOS transistors. [Doctoral Dissertation]. Université Toulouse III – Paul Sabatier; 2015. Available from: http://www.theses.fr/2015TOU30253


Brno University of Technology

19. Vitek, Vojtech. Budicí obvody výkonového tranzistoru SiC MOSFET: Drivers for power SiC MOSFET transistors.

Degree: 2019, Brno University of Technology

 The bachelor thesis describes gate driving principles of power MOSFET transistors made of silicon carbide material. The autor's aim is describing a different types of… (more)

Subjects/Keywords: budič; tranzistor; MOSFET; karbid kremíka; gate driver; transistor; MOSFET; silicon carbide

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Vitek, V. (2019). Budicí obvody výkonového tranzistoru SiC MOSFET: Drivers for power SiC MOSFET transistors. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/24839

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Vitek, Vojtech. “Budicí obvody výkonového tranzistoru SiC MOSFET: Drivers for power SiC MOSFET transistors.” 2019. Thesis, Brno University of Technology. Accessed October 27, 2020. http://hdl.handle.net/11012/24839.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Vitek, Vojtech. “Budicí obvody výkonového tranzistoru SiC MOSFET: Drivers for power SiC MOSFET transistors.” 2019. Web. 27 Oct 2020.

Vancouver:

Vitek V. Budicí obvody výkonového tranzistoru SiC MOSFET: Drivers for power SiC MOSFET transistors. [Internet] [Thesis]. Brno University of Technology; 2019. [cited 2020 Oct 27]. Available from: http://hdl.handle.net/11012/24839.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vitek V. Budicí obvody výkonového tranzistoru SiC MOSFET: Drivers for power SiC MOSFET transistors. [Thesis]. Brno University of Technology; 2019. Available from: http://hdl.handle.net/11012/24839

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

20. Karatsori, Theano. Caractérisation et modélisation de UTBB MOSFET sur SOI pour les technologies CMOS avancées et applications en simulations circuits : Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations.

Degree: Docteur es, Nano electronique et nano technologies, 2017, Université Grenoble Alpes (ComUE)

 La motivation de cette thèse est deux des principaux problèmes soulevés par la mise à l'échelle des appareils de la nouvelle ère dans la conception… (more)

Subjects/Keywords: Caractérisation; Mosfet; Modélisation; Fiabilité; Variabilité; Characterization; Mosfet; Modelling; Reliability; Variability; 620

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Karatsori, T. (2017). Caractérisation et modélisation de UTBB MOSFET sur SOI pour les technologies CMOS avancées et applications en simulations circuits : Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2017GREAT035

Chicago Manual of Style (16th Edition):

Karatsori, Theano. “Caractérisation et modélisation de UTBB MOSFET sur SOI pour les technologies CMOS avancées et applications en simulations circuits : Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations.” 2017. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed October 27, 2020. http://www.theses.fr/2017GREAT035.

MLA Handbook (7th Edition):

Karatsori, Theano. “Caractérisation et modélisation de UTBB MOSFET sur SOI pour les technologies CMOS avancées et applications en simulations circuits : Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations.” 2017. Web. 27 Oct 2020.

Vancouver:

Karatsori T. Caractérisation et modélisation de UTBB MOSFET sur SOI pour les technologies CMOS avancées et applications en simulations circuits : Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2017. [cited 2020 Oct 27]. Available from: http://www.theses.fr/2017GREAT035.

Council of Science Editors:

Karatsori T. Caractérisation et modélisation de UTBB MOSFET sur SOI pour les technologies CMOS avancées et applications en simulations circuits : Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2017. Available from: http://www.theses.fr/2017GREAT035


Brno University of Technology

21. Michálek, Branislav. Model tranzistoru MOSFET v programu SystemVision: Model of MOSFET transistor in program SystemVision.

Degree: 2019, Brno University of Technology

 This bachelor thesis deals with modeling of MOS transistor. The theoretical part of the thesis is dedicated to analysis of basic MOSFET structure and operation,… (more)

Subjects/Keywords: MOSFET; modelovanie MOSFETu; extrakcia parametrov; optimalizácia; SPICE; SystemVision; MOSFET; MOSFET modeling; parameter extraction; optimization; SPICE; SystemVision

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Michálek, B. (2019). Model tranzistoru MOSFET v programu SystemVision: Model of MOSFET transistor in program SystemVision. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/60459

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Michálek, Branislav. “Model tranzistoru MOSFET v programu SystemVision: Model of MOSFET transistor in program SystemVision.” 2019. Thesis, Brno University of Technology. Accessed October 27, 2020. http://hdl.handle.net/11012/60459.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Michálek, Branislav. “Model tranzistoru MOSFET v programu SystemVision: Model of MOSFET transistor in program SystemVision.” 2019. Web. 27 Oct 2020.

Vancouver:

Michálek B. Model tranzistoru MOSFET v programu SystemVision: Model of MOSFET transistor in program SystemVision. [Internet] [Thesis]. Brno University of Technology; 2019. [cited 2020 Oct 27]. Available from: http://hdl.handle.net/11012/60459.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Michálek B. Model tranzistoru MOSFET v programu SystemVision: Model of MOSFET transistor in program SystemVision. [Thesis]. Brno University of Technology; 2019. Available from: http://hdl.handle.net/11012/60459

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

22. Lee, Jung-Chan. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.

Degree: Master, Electrical Engineering, 2013, NSYSU

 In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP Schottky tunneling barrier… (more)

Subjects/Keywords: InP; ALD; Schottky tunneling barrier MOSFET; TiO2

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lee, J. (2013). Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Jung-Chan. “Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.” 2013. Thesis, NSYSU. Accessed October 27, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Jung-Chan. “Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.” 2013. Web. 27 Oct 2020.

Vancouver:

Lee J. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. [Internet] [Thesis]. NSYSU; 2013. [cited 2020 Oct 27]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee J. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

23. Tang, Tzu-hsien. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.

Degree: Master, Electrical Engineering, 2014, NSYSU

 In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP asytmmetrical Schottky barrier… (more)

Subjects/Keywords: InP; TiO2; asymmetrical Schottky barrier MOSFET; ALD

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tang, T. (2014). Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Thesis, NSYSU. Accessed October 27, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Web. 27 Oct 2020.

Vancouver:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Internet] [Thesis]. NSYSU; 2014. [cited 2020 Oct 27]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

24. Yang, Sheng-Hsiung. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.

Degree: Master, Electrical Engineering, 2012, NSYSU

 In this study, the thin titanium oxide (TiO2) film deposited on InP substrate was prepared by atomic layer deposition (ALD), which was used as gate… (more)

Subjects/Keywords: InP; TiO2; ALD; Schottky barrier MOSFET

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yang, S. (2012). Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Sheng-Hsiung. “Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.” 2012. Thesis, NSYSU. Accessed October 27, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Sheng-Hsiung. “Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.” 2012. Web. 27 Oct 2020.

Vancouver:

Yang S. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. [Internet] [Thesis]. NSYSU; 2012. [cited 2020 Oct 27]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang S. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

25. Lin, Shih-Hao. Characterization of Silicon and Gallium Arsenide MOS Structures with Titanium Oxide as dielectric layer.

Degree: Master, Electrical Engineering, 2006, NSYSU

 For MOCVD-TiO2/Si MOS structure, oxygen vacancy and grain boundary are the main defects of polycrystalline TiO2 films. They are the main mechanisms for the leakage… (more)

Subjects/Keywords: MOCVD; MOSFET; TiO2

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, S. (2006). Characterization of Silicon and Gallium Arsenide MOS Structures with Titanium Oxide as dielectric layer. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726106-194143

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Shih-Hao. “Characterization of Silicon and Gallium Arsenide MOS Structures with Titanium Oxide as dielectric layer.” 2006. Thesis, NSYSU. Accessed October 27, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726106-194143.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Shih-Hao. “Characterization of Silicon and Gallium Arsenide MOS Structures with Titanium Oxide as dielectric layer.” 2006. Web. 27 Oct 2020.

Vancouver:

Lin S. Characterization of Silicon and Gallium Arsenide MOS Structures with Titanium Oxide as dielectric layer. [Internet] [Thesis]. NSYSU; 2006. [cited 2020 Oct 27]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726106-194143.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin S. Characterization of Silicon and Gallium Arsenide MOS Structures with Titanium Oxide as dielectric layer. [Thesis]. NSYSU; 2006. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726106-194143

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

26. Saijets, Jan. MOSFET RF Characterization Using Bulk and SOI CMOS Technologies.

Degree: 2007, VTT Technical Research Centre of Finland

MOSFET radio-frequency characterization and modeling is studied, both with SOI CMOS and bulk CMOS technologies. The network analyzer measurement uncertainties are studied, as is their… (more)

Subjects/Keywords: RF; CMOS; modeling; MOSFET; measurement uncertainty

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Saijets, J. (2007). MOSFET RF Characterization Using Bulk and SOI CMOS Technologies. (Thesis). VTT Technical Research Centre of Finland. Retrieved from http://lib.tkk.fi/Diss/2007/isbn9789513870256/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Saijets, Jan. “MOSFET RF Characterization Using Bulk and SOI CMOS Technologies.” 2007. Thesis, VTT Technical Research Centre of Finland. Accessed October 27, 2020. http://lib.tkk.fi/Diss/2007/isbn9789513870256/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Saijets, Jan. “MOSFET RF Characterization Using Bulk and SOI CMOS Technologies.” 2007. Web. 27 Oct 2020.

Vancouver:

Saijets J. MOSFET RF Characterization Using Bulk and SOI CMOS Technologies. [Internet] [Thesis]. VTT Technical Research Centre of Finland; 2007. [cited 2020 Oct 27]. Available from: http://lib.tkk.fi/Diss/2007/isbn9789513870256/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Saijets J. MOSFET RF Characterization Using Bulk and SOI CMOS Technologies. [Thesis]. VTT Technical Research Centre of Finland; 2007. Available from: http://lib.tkk.fi/Diss/2007/isbn9789513870256/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of California – San Diego

27. Edmonds, Mary Ellen. InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers.

Degree: Materials Sci and Engineering, 2016, University of California – San Diego

 Metal oxide semiconductor field effect transistors (MOSFETs) are transitioning away from exclusive use of silicon and germanium into the employment of compound semiconductors such as… (more)

Subjects/Keywords: Materials Science; ALD; CVD; MOSFET; Surface Science

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Edmonds, M. E. (2016). InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers. (Thesis). University of California – San Diego. Retrieved from http://www.escholarship.org/uc/item/50j1t1wk

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Edmonds, Mary Ellen. “InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers.” 2016. Thesis, University of California – San Diego. Accessed October 27, 2020. http://www.escholarship.org/uc/item/50j1t1wk.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Edmonds, Mary Ellen. “InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers.” 2016. Web. 27 Oct 2020.

Vancouver:

Edmonds ME. InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers. [Internet] [Thesis]. University of California – San Diego; 2016. [cited 2020 Oct 27]. Available from: http://www.escholarship.org/uc/item/50j1t1wk.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Edmonds ME. InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers. [Thesis]. University of California – San Diego; 2016. Available from: http://www.escholarship.org/uc/item/50j1t1wk

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of California – Berkeley

28. Shin, Changhwan. Advanced MOSFET Designs and Implications for SRAM Scaling.

Degree: Electrical Engineering & Computer Sciences, 2011, University of California – Berkeley

 Continued planar bulk MOSFET scaling is becoming increasingly difficult due to increased random variation in transistor performance with decreasing gate length, and thereby scaling of… (more)

Subjects/Keywords: Electrical engineering; Devices; MOSFET; SRAM; Variability

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Shin, C. (2011). Advanced MOSFET Designs and Implications for SRAM Scaling. (Thesis). University of California – Berkeley. Retrieved from http://www.escholarship.org/uc/item/2nt3f2dn

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Shin, Changhwan. “Advanced MOSFET Designs and Implications for SRAM Scaling.” 2011. Thesis, University of California – Berkeley. Accessed October 27, 2020. http://www.escholarship.org/uc/item/2nt3f2dn.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Shin, Changhwan. “Advanced MOSFET Designs and Implications for SRAM Scaling.” 2011. Web. 27 Oct 2020.

Vancouver:

Shin C. Advanced MOSFET Designs and Implications for SRAM Scaling. [Internet] [Thesis]. University of California – Berkeley; 2011. [cited 2020 Oct 27]. Available from: http://www.escholarship.org/uc/item/2nt3f2dn.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Shin C. Advanced MOSFET Designs and Implications for SRAM Scaling. [Thesis]. University of California – Berkeley; 2011. Available from: http://www.escholarship.org/uc/item/2nt3f2dn

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

29. Nassar, Christopher. Compact modeling of thin-film silicon transistors fabricated on glass.

Degree: PhD, Microsystems Engineering, 2011, Rochester Institute of Technology

 The semiconductor industry, now entering its seventh decade, continues to innovate and evolve at a breakneck pace. E. O. Wilson, the famous Harvard biologist who… (more)

Subjects/Keywords: MOSFET; Silicon-on-glass; SiOG; Transistor

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Nassar, C. (2011). Compact modeling of thin-film silicon transistors fabricated on glass. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/16

Chicago Manual of Style (16th Edition):

Nassar, Christopher. “Compact modeling of thin-film silicon transistors fabricated on glass.” 2011. Doctoral Dissertation, Rochester Institute of Technology. Accessed October 27, 2020. https://scholarworks.rit.edu/theses/16.

MLA Handbook (7th Edition):

Nassar, Christopher. “Compact modeling of thin-film silicon transistors fabricated on glass.” 2011. Web. 27 Oct 2020.

Vancouver:

Nassar C. Compact modeling of thin-film silicon transistors fabricated on glass. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2011. [cited 2020 Oct 27]. Available from: https://scholarworks.rit.edu/theses/16.

Council of Science Editors:

Nassar C. Compact modeling of thin-film silicon transistors fabricated on glass. [Doctoral Dissertation]. Rochester Institute of Technology; 2011. Available from: https://scholarworks.rit.edu/theses/16


Rochester Institute of Technology

30. Urban, Christopher. Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies.

Degree: PhD, Microsystems Engineering, 2011, Rochester Institute of Technology

 The International Technology Roadmap for Semiconductors predicts that the nominal power supply voltage, VDD, will fall to 0.7 V by the end of the bulk… (more)

Subjects/Keywords: Analog; Body-driven; Bulk-driven; CMOS; MOSFET

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Urban, C. (2011). Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/15

Chicago Manual of Style (16th Edition):

Urban, Christopher. “Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies.” 2011. Doctoral Dissertation, Rochester Institute of Technology. Accessed October 27, 2020. https://scholarworks.rit.edu/theses/15.

MLA Handbook (7th Edition):

Urban, Christopher. “Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies.” 2011. Web. 27 Oct 2020.

Vancouver:

Urban C. Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2011. [cited 2020 Oct 27]. Available from: https://scholarworks.rit.edu/theses/15.

Council of Science Editors:

Urban C. Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies. [Doctoral Dissertation]. Rochester Institute of Technology; 2011. Available from: https://scholarworks.rit.edu/theses/15

[1] [2] [3] [4] [5] … [17]

.