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You searched for subject:(molecular beam epitaxy). Showing records 1 – 30 of 356 total matches.

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University of Hong Kong

1. 焦璐; Jiao, Lu. Growth of transition metal dichalcogenide thin films by molecular beam epitaxy.

Degree: PhD, 2015, University of Hong Kong

Atomically thin transition metal dichalcogenides (TMD) have attracted intensive research interests due to their extraordinary properties and potential applications in electronics and optoelectronics. In this… (more)

Subjects/Keywords: Metallic films; Molecular beam epitaxy

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APA (6th Edition):

焦璐; Jiao, L. (2015). Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. (Doctoral Dissertation). University of Hong Kong. Retrieved from Jiao, L. [焦璐]. (2015). Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5576771 ; http://hdl.handle.net/10722/221085

Chicago Manual of Style (16th Edition):

焦璐; Jiao, Lu. “Growth of transition metal dichalcogenide thin films by molecular beam epitaxy.” 2015. Doctoral Dissertation, University of Hong Kong. Accessed May 26, 2019. Jiao, L. [焦璐]. (2015). Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5576771 ; http://hdl.handle.net/10722/221085.

MLA Handbook (7th Edition):

焦璐; Jiao, Lu. “Growth of transition metal dichalcogenide thin films by molecular beam epitaxy.” 2015. Web. 26 May 2019.

Vancouver:

焦璐; Jiao L. Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. [Internet] [Doctoral dissertation]. University of Hong Kong; 2015. [cited 2019 May 26]. Available from: Jiao, L. [焦璐]. (2015). Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5576771 ; http://hdl.handle.net/10722/221085.

Council of Science Editors:

焦璐; Jiao L. Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. [Doctoral Dissertation]. University of Hong Kong; 2015. Available from: Jiao, L. [焦璐]. (2015). Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5576771 ; http://hdl.handle.net/10722/221085


University of Hong Kong

2. 郭欣; Guo, Xin. Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films.

Degree: PhD, 2013, University of Hong Kong

 In this thesis, molecular-beam epitaxy (MBE) of three-dimensional (3D) topological insulator (TI) Bi_2 Se_3 thin films on different substrates is presented. The substrates experimented include… (more)

Subjects/Keywords: Thin films; Molecular beam epitaxy

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APA (6th Edition):

郭欣; Guo, X. (2013). Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. (Doctoral Dissertation). University of Hong Kong. Retrieved from Guo, X. [郭欣]. (2013). Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5153683 ; http://dx.doi.org/10.5353/th_b5153683 ; http://hdl.handle.net/10722/196030

Chicago Manual of Style (16th Edition):

郭欣; Guo, Xin. “Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films.” 2013. Doctoral Dissertation, University of Hong Kong. Accessed May 26, 2019. Guo, X. [郭欣]. (2013). Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5153683 ; http://dx.doi.org/10.5353/th_b5153683 ; http://hdl.handle.net/10722/196030.

MLA Handbook (7th Edition):

郭欣; Guo, Xin. “Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films.” 2013. Web. 26 May 2019.

Vancouver:

郭欣; Guo X. Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. [Internet] [Doctoral dissertation]. University of Hong Kong; 2013. [cited 2019 May 26]. Available from: Guo, X. [郭欣]. (2013). Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5153683 ; http://dx.doi.org/10.5353/th_b5153683 ; http://hdl.handle.net/10722/196030.

Council of Science Editors:

郭欣; Guo X. Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. [Doctoral Dissertation]. University of Hong Kong; 2013. Available from: Guo, X. [郭欣]. (2013). Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5153683 ; http://dx.doi.org/10.5353/th_b5153683 ; http://hdl.handle.net/10722/196030


The Ohio State University

3. Lin, Yong. Science and applications of III-V graded anion metamorphic buffers on INP substrates.

Degree: PhD, Electrical Engineering, 2007, The Ohio State University

 Anion-based InAsP metamorphic step-graded buffers are a novel solution to the lattice-mismatch problem of devices with the lattice constant between InP and InAs grown on… (more)

Subjects/Keywords: InAsP; Metamorphic graded buffers; Molecular beam epitaxy

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APA (6th Edition):

Lin, Y. (2007). Science and applications of III-V graded anion metamorphic buffers on INP substrates. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1172852334

Chicago Manual of Style (16th Edition):

Lin, Yong. “Science and applications of III-V graded anion metamorphic buffers on INP substrates.” 2007. Doctoral Dissertation, The Ohio State University. Accessed May 26, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1172852334.

MLA Handbook (7th Edition):

Lin, Yong. “Science and applications of III-V graded anion metamorphic buffers on INP substrates.” 2007. Web. 26 May 2019.

Vancouver:

Lin Y. Science and applications of III-V graded anion metamorphic buffers on INP substrates. [Internet] [Doctoral dissertation]. The Ohio State University; 2007. [cited 2019 May 26]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1172852334.

Council of Science Editors:

Lin Y. Science and applications of III-V graded anion metamorphic buffers on INP substrates. [Doctoral Dissertation]. The Ohio State University; 2007. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1172852334


Oregon State University

4. Ebner, John. The growth of ternary compound semiconductors by molecular beam epitaxy.

Degree: MS, Electrical and Computer Engineering, 1987, Oregon State University

 This thesis reports on an investigation of the growth, by Molecular Beam Epitaxy, of III,III-V ternary compound semiconductors. Strained and unstrained growth was studied via… (more)

Subjects/Keywords: Molecular beam epitaxy

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APA (6th Edition):

Ebner, J. (1987). The growth of ternary compound semiconductors by molecular beam epitaxy. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/41618

Chicago Manual of Style (16th Edition):

Ebner, John. “The growth of ternary compound semiconductors by molecular beam epitaxy.” 1987. Masters Thesis, Oregon State University. Accessed May 26, 2019. http://hdl.handle.net/1957/41618.

MLA Handbook (7th Edition):

Ebner, John. “The growth of ternary compound semiconductors by molecular beam epitaxy.” 1987. Web. 26 May 2019.

Vancouver:

Ebner J. The growth of ternary compound semiconductors by molecular beam epitaxy. [Internet] [Masters thesis]. Oregon State University; 1987. [cited 2019 May 26]. Available from: http://hdl.handle.net/1957/41618.

Council of Science Editors:

Ebner J. The growth of ternary compound semiconductors by molecular beam epitaxy. [Masters Thesis]. Oregon State University; 1987. Available from: http://hdl.handle.net/1957/41618


Hong Kong University of Science and Technology

5. Tian, Jiachao. MBE-grown self-assembled iron nanowires.

Degree: 2011, Hong Kong University of Science and Technology

 In recent years, magnetic nanowires (NWs) have been extensively studied because of their novel physical properties and their potential applications in a number of magnetic… (more)

Subjects/Keywords: Molecular beam epitaxy; Nanowires; Ferromagnetic materials

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APA (6th Edition):

Tian, J. (2011). MBE-grown self-assembled iron nanowires. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1155394 ; http://repository.ust.hk/ir/bitstream/1783.1-7430/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tian, Jiachao. “MBE-grown self-assembled iron nanowires.” 2011. Thesis, Hong Kong University of Science and Technology. Accessed May 26, 2019. https://doi.org/10.14711/thesis-b1155394 ; http://repository.ust.hk/ir/bitstream/1783.1-7430/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tian, Jiachao. “MBE-grown self-assembled iron nanowires.” 2011. Web. 26 May 2019.

Vancouver:

Tian J. MBE-grown self-assembled iron nanowires. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2011. [cited 2019 May 26]. Available from: https://doi.org/10.14711/thesis-b1155394 ; http://repository.ust.hk/ir/bitstream/1783.1-7430/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tian J. MBE-grown self-assembled iron nanowires. [Thesis]. Hong Kong University of Science and Technology; 2011. Available from: https://doi.org/10.14711/thesis-b1155394 ; http://repository.ust.hk/ir/bitstream/1783.1-7430/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

6. Wang, Gan. MBE-grown binary chalcogenide 1D nanostructures : synthesis, structural analysis and formation mechanisms.

Degree: 2011, Hong Kong University of Science and Technology

 Recently, One-dimensional nanostructures such as nanowires, nanograting, and nanotrenches, have attracted great attention due to their important applications in nano science and technology. They are… (more)

Subjects/Keywords: Molecular beam epitaxy; Chalcogenides; Nanostructures; Compound semiconductors

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APA (6th Edition):

Wang, G. (2011). MBE-grown binary chalcogenide 1D nanostructures : synthesis, structural analysis and formation mechanisms. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1136684 ; http://repository.ust.hk/ir/bitstream/1783.1-7135/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Gan. “MBE-grown binary chalcogenide 1D nanostructures : synthesis, structural analysis and formation mechanisms.” 2011. Thesis, Hong Kong University of Science and Technology. Accessed May 26, 2019. https://doi.org/10.14711/thesis-b1136684 ; http://repository.ust.hk/ir/bitstream/1783.1-7135/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Gan. “MBE-grown binary chalcogenide 1D nanostructures : synthesis, structural analysis and formation mechanisms.” 2011. Web. 26 May 2019.

Vancouver:

Wang G. MBE-grown binary chalcogenide 1D nanostructures : synthesis, structural analysis and formation mechanisms. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2011. [cited 2019 May 26]. Available from: https://doi.org/10.14711/thesis-b1136684 ; http://repository.ust.hk/ir/bitstream/1783.1-7135/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang G. MBE-grown binary chalcogenide 1D nanostructures : synthesis, structural analysis and formation mechanisms. [Thesis]. Hong Kong University of Science and Technology; 2011. Available from: https://doi.org/10.14711/thesis-b1136684 ; http://repository.ust.hk/ir/bitstream/1783.1-7135/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

7. Lee, June Hyuk. GROWTH OF MULTIFERROIC OXIDES BY MOLECULAR-BEAM EPITAXY.

Degree: PhD, Materials Science and Engineering, 2011, Penn State University

 Multiferroic materials, which simultaneously exhibit ferroelectricity and ferromagnetism, have attracted a great deal of attention due to their physical origin and potential application in novel… (more)

Subjects/Keywords: Molecular-beam epitaxy; Multiferroics; Ferroelectrics; Ferromagnet

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APA (6th Edition):

Lee, J. H. (2011). GROWTH OF MULTIFERROIC OXIDES BY MOLECULAR-BEAM EPITAXY. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/11504

Chicago Manual of Style (16th Edition):

Lee, June Hyuk. “GROWTH OF MULTIFERROIC OXIDES BY MOLECULAR-BEAM EPITAXY.” 2011. Doctoral Dissertation, Penn State University. Accessed May 26, 2019. https://etda.libraries.psu.edu/catalog/11504.

MLA Handbook (7th Edition):

Lee, June Hyuk. “GROWTH OF MULTIFERROIC OXIDES BY MOLECULAR-BEAM EPITAXY.” 2011. Web. 26 May 2019.

Vancouver:

Lee JH. GROWTH OF MULTIFERROIC OXIDES BY MOLECULAR-BEAM EPITAXY. [Internet] [Doctoral dissertation]. Penn State University; 2011. [cited 2019 May 26]. Available from: https://etda.libraries.psu.edu/catalog/11504.

Council of Science Editors:

Lee JH. GROWTH OF MULTIFERROIC OXIDES BY MOLECULAR-BEAM EPITAXY. [Doctoral Dissertation]. Penn State University; 2011. Available from: https://etda.libraries.psu.edu/catalog/11504


University of North Texas

8. Elmarhoumi, Nader M. Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization.

Degree: 2013, University of North Texas

 Semi-conductor industry relies heavily on silicon (Si). However, Si is not a direct-band gap semi-conductor. Consequently, Si does not possess great versatility for multi-functional applications… (more)

Subjects/Keywords: Semi-conductor; silicides; molecular beam epitaxy

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APA (6th Edition):

Elmarhoumi, N. M. (2013). Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc490047/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Elmarhoumi, Nader M. “Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization.” 2013. Thesis, University of North Texas. Accessed May 26, 2019. https://digital.library.unt.edu/ark:/67531/metadc490047/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Elmarhoumi, Nader M. “Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization.” 2013. Web. 26 May 2019.

Vancouver:

Elmarhoumi NM. Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization. [Internet] [Thesis]. University of North Texas; 2013. [cited 2019 May 26]. Available from: https://digital.library.unt.edu/ark:/67531/metadc490047/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Elmarhoumi NM. Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization. [Thesis]. University of North Texas; 2013. Available from: https://digital.library.unt.edu/ark:/67531/metadc490047/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Drexel University

9. Smith, Cole Richard. Correlation of Structure and Properties in Perovskite Oxide Thin Films.

Degree: 2014, Drexel University

Rare-earth nickelate (RNiO3) materials exhibit metal-to-insulator transitions at given critical temperatures, which are highly correlated to the relative radii of the rare-earth elements to the… (more)

Subjects/Keywords: Materials science; Crystallography; Molecular beam epitaxy

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APA (6th Edition):

Smith, C. R. (2014). Correlation of Structure and Properties in Perovskite Oxide Thin Films. (Thesis). Drexel University. Retrieved from http://hdl.handle.net/1860/idea:6388

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Smith, Cole Richard. “Correlation of Structure and Properties in Perovskite Oxide Thin Films.” 2014. Thesis, Drexel University. Accessed May 26, 2019. http://hdl.handle.net/1860/idea:6388.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Smith, Cole Richard. “Correlation of Structure and Properties in Perovskite Oxide Thin Films.” 2014. Web. 26 May 2019.

Vancouver:

Smith CR. Correlation of Structure and Properties in Perovskite Oxide Thin Films. [Internet] [Thesis]. Drexel University; 2014. [cited 2019 May 26]. Available from: http://hdl.handle.net/1860/idea:6388.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Smith CR. Correlation of Structure and Properties in Perovskite Oxide Thin Films. [Thesis]. Drexel University; 2014. Available from: http://hdl.handle.net/1860/idea:6388

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

10. Tournet, Julie. Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems.

Degree: 2015, University of Waterloo

 The growth of Aluminum (Al) on semiconductors and dielectrics is a cornerstone in the quest for scalable quantum computing systems. Indeed the electrical properties of… (more)

Subjects/Keywords: Molecular Beam Epitaxy; Aluminum; Semiconductors; Superconducting resonators

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APA (6th Edition):

Tournet, J. (2015). Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/9550

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tournet, Julie. “Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems.” 2015. Thesis, University of Waterloo. Accessed May 26, 2019. http://hdl.handle.net/10012/9550.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tournet, Julie. “Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems.” 2015. Web. 26 May 2019.

Vancouver:

Tournet J. Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems. [Internet] [Thesis]. University of Waterloo; 2015. [cited 2019 May 26]. Available from: http://hdl.handle.net/10012/9550.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tournet J. Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems. [Thesis]. University of Waterloo; 2015. Available from: http://hdl.handle.net/10012/9550

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Virginia

11. Petz, Christopher. Epitaxial Nanotemplates for Strain Modulated Carrier Confinement in Silicon.

Degree: PhD, 2012, University of Virginia

The fundamental goal of this thesis is to characterize and assess the effects of strain, chemistry, and growth orientation on the structure of complex epitaxial… (more)

Subjects/Keywords: epitaxy; Si; Ge; SiGe; MBE; molecular beam epitaxy

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APA (6th Edition):

Petz, C. (2012). Epitaxial Nanotemplates for Strain Modulated Carrier Confinement in Silicon. (Doctoral Dissertation). University of Virginia. Retrieved from http://libra.virginia.edu/catalog/libra-oa:637

Chicago Manual of Style (16th Edition):

Petz, Christopher. “Epitaxial Nanotemplates for Strain Modulated Carrier Confinement in Silicon.” 2012. Doctoral Dissertation, University of Virginia. Accessed May 26, 2019. http://libra.virginia.edu/catalog/libra-oa:637.

MLA Handbook (7th Edition):

Petz, Christopher. “Epitaxial Nanotemplates for Strain Modulated Carrier Confinement in Silicon.” 2012. Web. 26 May 2019.

Vancouver:

Petz C. Epitaxial Nanotemplates for Strain Modulated Carrier Confinement in Silicon. [Internet] [Doctoral dissertation]. University of Virginia; 2012. [cited 2019 May 26]. Available from: http://libra.virginia.edu/catalog/libra-oa:637.

Council of Science Editors:

Petz C. Epitaxial Nanotemplates for Strain Modulated Carrier Confinement in Silicon. [Doctoral Dissertation]. University of Virginia; 2012. Available from: http://libra.virginia.edu/catalog/libra-oa:637


Georgia Tech

12. Carver, Alexander Gilman. Novel chlorine-based chemistry and implementation hardware for the growth of lithium niobate and related complex metal oxides.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 Oxide related research has increased as standard oxides reach their operational limits and new classes of devices are imagined that can only be realized through… (more)

Subjects/Keywords: Ion current; Flux measurement; MBE; Rf induction heating; Lithium niobate; Molecular beam epitaxy; Lithium niobate; Molecular beam epitaxy

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APA (6th Edition):

Carver, A. G. (2009). Novel chlorine-based chemistry and implementation hardware for the growth of lithium niobate and related complex metal oxides. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/33987

Chicago Manual of Style (16th Edition):

Carver, Alexander Gilman. “Novel chlorine-based chemistry and implementation hardware for the growth of lithium niobate and related complex metal oxides.” 2009. Doctoral Dissertation, Georgia Tech. Accessed May 26, 2019. http://hdl.handle.net/1853/33987.

MLA Handbook (7th Edition):

Carver, Alexander Gilman. “Novel chlorine-based chemistry and implementation hardware for the growth of lithium niobate and related complex metal oxides.” 2009. Web. 26 May 2019.

Vancouver:

Carver AG. Novel chlorine-based chemistry and implementation hardware for the growth of lithium niobate and related complex metal oxides. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2019 May 26]. Available from: http://hdl.handle.net/1853/33987.

Council of Science Editors:

Carver AG. Novel chlorine-based chemistry and implementation hardware for the growth of lithium niobate and related complex metal oxides. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/33987


NSYSU

13. Tu, Ya-ting. The Study of Formation Mechanism and Stability of Rocksalt Structure MgZnO Epilayer.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 Alloying ZnO (Eg~3.3 eV) with MgO (Eg~7.7 eV) enables widening of band gap of ZnO. The coverage of the ZnO band gap will increase from… (more)

Subjects/Keywords: rocksalt structure; MgZnO; hetero-epitaxy; martensitic transformation; phase stability; molecular beam epitaxy; wurtzite structure

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APA (6th Edition):

Tu, Y. (2014). The Study of Formation Mechanism and Stability of Rocksalt Structure MgZnO Epilayer. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804114-124034

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tu, Ya-ting. “The Study of Formation Mechanism and Stability of Rocksalt Structure MgZnO Epilayer.” 2014. Thesis, NSYSU. Accessed May 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804114-124034.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tu, Ya-ting. “The Study of Formation Mechanism and Stability of Rocksalt Structure MgZnO Epilayer.” 2014. Web. 26 May 2019.

Vancouver:

Tu Y. The Study of Formation Mechanism and Stability of Rocksalt Structure MgZnO Epilayer. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 May 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804114-124034.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tu Y. The Study of Formation Mechanism and Stability of Rocksalt Structure MgZnO Epilayer. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804114-124034

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

14. Tong, Wusheng. Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures.

Degree: PhD, Physics, 1996, Georgia Tech

Subjects/Keywords: Crystal growth; Molecular beam epitaxy; Epitaxy

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APA (6th Edition):

Tong, W. (1996). Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/31012

Chicago Manual of Style (16th Edition):

Tong, Wusheng. “Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures.” 1996. Doctoral Dissertation, Georgia Tech. Accessed May 26, 2019. http://hdl.handle.net/1853/31012.

MLA Handbook (7th Edition):

Tong, Wusheng. “Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures.” 1996. Web. 26 May 2019.

Vancouver:

Tong W. Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures. [Internet] [Doctoral dissertation]. Georgia Tech; 1996. [cited 2019 May 26]. Available from: http://hdl.handle.net/1853/31012.

Council of Science Editors:

Tong W. Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures. [Doctoral Dissertation]. Georgia Tech; 1996. Available from: http://hdl.handle.net/1853/31012


Penn State University

15. Brooks, Charles M. The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy.

Degree: PhD, Materials Science and Engineering, 2012, Penn State University

 Included in this work is a range of studies on films of homoeptaxial and heteroepitaxial films of SrTiO3 and the first reported phase-pure films of… (more)

Subjects/Keywords: oxide; thin film; MBE; epitaxy; SrTiO3; LuFe2O4; molecular-beam epitaxy; strontium titanate; lutetium ferrite

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APA (6th Edition):

Brooks, C. M. (2012). The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/16199

Chicago Manual of Style (16th Edition):

Brooks, Charles M. “The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy.” 2012. Doctoral Dissertation, Penn State University. Accessed May 26, 2019. https://etda.libraries.psu.edu/catalog/16199.

MLA Handbook (7th Edition):

Brooks, Charles M. “The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy.” 2012. Web. 26 May 2019.

Vancouver:

Brooks CM. The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy. [Internet] [Doctoral dissertation]. Penn State University; 2012. [cited 2019 May 26]. Available from: https://etda.libraries.psu.edu/catalog/16199.

Council of Science Editors:

Brooks CM. The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy. [Doctoral Dissertation]. Penn State University; 2012. Available from: https://etda.libraries.psu.edu/catalog/16199


Heriot-Watt University

16. Stewart, Helen. Studies into the growth and doping of zinc selenide and zinc cadmium selenide.

Degree: PhD, 1996, Heriot-Watt University

Subjects/Keywords: 530.41; Molecular beam epitaxy; Semiconductors

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APA (6th Edition):

Stewart, H. (1996). Studies into the growth and doping of zinc selenide and zinc cadmium selenide. (Doctoral Dissertation). Heriot-Watt University. Retrieved from http://hdl.handle.net/10399/734

Chicago Manual of Style (16th Edition):

Stewart, Helen. “Studies into the growth and doping of zinc selenide and zinc cadmium selenide.” 1996. Doctoral Dissertation, Heriot-Watt University. Accessed May 26, 2019. http://hdl.handle.net/10399/734.

MLA Handbook (7th Edition):

Stewart, Helen. “Studies into the growth and doping of zinc selenide and zinc cadmium selenide.” 1996. Web. 26 May 2019.

Vancouver:

Stewart H. Studies into the growth and doping of zinc selenide and zinc cadmium selenide. [Internet] [Doctoral dissertation]. Heriot-Watt University; 1996. [cited 2019 May 26]. Available from: http://hdl.handle.net/10399/734.

Council of Science Editors:

Stewart H. Studies into the growth and doping of zinc selenide and zinc cadmium selenide. [Doctoral Dissertation]. Heriot-Watt University; 1996. Available from: http://hdl.handle.net/10399/734


NSYSU

17. Chang, Ching-wen. The growth, fabrication, and analyses of III-V nitride thin film and nanorod photovoltaic devices.

Degree: PhD, Physics, 2017, NSYSU

 The purpose of this dissertation is developing the Si (111) based nitride multi-junction solar cells. Nitride thin films/ nanorods are grown on Si (111) wafer,… (more)

Subjects/Keywords: Molecular beam epitaxy (MBE); III-Nitride; Solar cell; nanorods

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APA (6th Edition):

Chang, C. (2017). The growth, fabrication, and analyses of III-V nitride thin film and nanorod photovoltaic devices. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911117-142948

Chicago Manual of Style (16th Edition):

Chang, Ching-wen. “The growth, fabrication, and analyses of III-V nitride thin film and nanorod photovoltaic devices.” 2017. Doctoral Dissertation, NSYSU. Accessed May 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911117-142948.

MLA Handbook (7th Edition):

Chang, Ching-wen. “The growth, fabrication, and analyses of III-V nitride thin film and nanorod photovoltaic devices.” 2017. Web. 26 May 2019.

Vancouver:

Chang C. The growth, fabrication, and analyses of III-V nitride thin film and nanorod photovoltaic devices. [Internet] [Doctoral dissertation]. NSYSU; 2017. [cited 2019 May 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911117-142948.

Council of Science Editors:

Chang C. The growth, fabrication, and analyses of III-V nitride thin film and nanorod photovoltaic devices. [Doctoral Dissertation]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911117-142948


NSYSU

18. Yeh, Hsiu-Hung. Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 Attempts of growing cuprous oxide (Cu2O) epitaxial film on Cu substrate by molecular beam epitaxy were made in this work. The main purpose is to… (more)

Subjects/Keywords: epitaxial growth; Cu2O; Cu substrate; electron backscatter diffraction; molecular beam epitaxy

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APA (6th Edition):

Yeh, H. (2017). Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729117-195028

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yeh, Hsiu-Hung. “Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy.” 2017. Thesis, NSYSU. Accessed May 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729117-195028.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yeh, Hsiu-Hung. “Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy.” 2017. Web. 26 May 2019.

Vancouver:

Yeh H. Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 May 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729117-195028.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yeh H. Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729117-195028

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

19. Chang, Chia-yu. Optical Characteristics of InGaN Solar Cell Structural Materials.

Degree: Master, Physics, 2017, NSYSU

 In this thesis we study the physical properties of gallium nitride (GaN) nanorods and InGaN thin films. These samples were grown by plasma assisted molecular(more)

Subjects/Keywords: nanostructure; plasma-assisted molecular beam epitaxy; InGaN; solar cells structures; nanorods

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APA (6th Edition):

Chang, C. (2017). Optical Characteristics of InGaN Solar Cell Structural Materials. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-182142

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Chia-yu. “Optical Characteristics of InGaN Solar Cell Structural Materials.” 2017. Thesis, NSYSU. Accessed May 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-182142.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Chia-yu. “Optical Characteristics of InGaN Solar Cell Structural Materials.” 2017. Web. 26 May 2019.

Vancouver:

Chang C. Optical Characteristics of InGaN Solar Cell Structural Materials. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 May 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-182142.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang C. Optical Characteristics of InGaN Solar Cell Structural Materials. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-182142

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

20. Gunning, Brendan. Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 P-type doping of III-nitrides is explored in order to better understand the shortcomings of existing p-type material and achieve higher hole concentrations. Using a modified… (more)

Subjects/Keywords: III-nitride; Semiconductor; Molecular beam epitaxy; Gallium nitride

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APA (6th Edition):

Gunning, B. (2015). Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58142

Chicago Manual of Style (16th Edition):

Gunning, Brendan. “Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell.” 2015. Doctoral Dissertation, Georgia Tech. Accessed May 26, 2019. http://hdl.handle.net/1853/58142.

MLA Handbook (7th Edition):

Gunning, Brendan. “Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell.” 2015. Web. 26 May 2019.

Vancouver:

Gunning B. Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2019 May 26]. Available from: http://hdl.handle.net/1853/58142.

Council of Science Editors:

Gunning B. Addressing the fundamental obstacles of p-type doping, substrates, and defect densities in group III-nitrides grown by molecular beam epitaxy: Towards a III-nitride on silicon solar cell. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/58142


University of Canterbury

21. Chai, Jessica Hui Ju. Combining Zinc Oxide and Silver for Potential Optoelectronic Applications.

Degree: Electrical and Computer Engineering, 2010, University of Canterbury

 Semiconductors represent the enabling technology that underpins the many advances that define modern society. One semiconductor that shows considerable promise in the fabrication of new… (more)

Subjects/Keywords: molecular beam epitaxy; zinc oxide; silver; doping; superlens; heteroepitaxy; sputtering

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APA (6th Edition):

Chai, J. H. J. (2010). Combining Zinc Oxide and Silver for Potential Optoelectronic Applications. (Thesis). University of Canterbury. Retrieved from http://hdl.handle.net/10092/3529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chai, Jessica Hui Ju. “Combining Zinc Oxide and Silver for Potential Optoelectronic Applications.” 2010. Thesis, University of Canterbury. Accessed May 26, 2019. http://hdl.handle.net/10092/3529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chai, Jessica Hui Ju. “Combining Zinc Oxide and Silver for Potential Optoelectronic Applications.” 2010. Web. 26 May 2019.

Vancouver:

Chai JHJ. Combining Zinc Oxide and Silver for Potential Optoelectronic Applications. [Internet] [Thesis]. University of Canterbury; 2010. [cited 2019 May 26]. Available from: http://hdl.handle.net/10092/3529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chai JHJ. Combining Zinc Oxide and Silver for Potential Optoelectronic Applications. [Thesis]. University of Canterbury; 2010. Available from: http://hdl.handle.net/10092/3529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


The Ohio State University

22. Kent, Thomas Frederick. III-Nitride Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering.

Degree: PhD, Materials Science and Engineering, 2014, The Ohio State University

 Over the last two decades, group III-nitride compound semiconductor materials have revolutionized modern optoelectronics and high frequency devices. In this work, III-nitride based compound semiconductor… (more)

Subjects/Keywords: Materials Science; Semiconductor; molecular beam epitaxy; Optoelectronics; Spintronics; Bandgap Engineering; photoluminescence

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APA (6th Edition):

Kent, T. F. (2014). III-Nitride Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1408564155

Chicago Manual of Style (16th Edition):

Kent, Thomas Frederick. “III-Nitride Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering.” 2014. Doctoral Dissertation, The Ohio State University. Accessed May 26, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1408564155.

MLA Handbook (7th Edition):

Kent, Thomas Frederick. “III-Nitride Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering.” 2014. Web. 26 May 2019.

Vancouver:

Kent TF. III-Nitride Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering. [Internet] [Doctoral dissertation]. The Ohio State University; 2014. [cited 2019 May 26]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1408564155.

Council of Science Editors:

Kent TF. III-Nitride Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering. [Doctoral Dissertation]. The Ohio State University; 2014. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1408564155


NSYSU

23. Yang, Chen-chi. Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy.

Degree: Master, Physics, 2011, NSYSU

 This article describes that we grew InGaN ternary films by Plasma- Assisted Molecular Beam Epitaxy (PAMBE) on the ZnO substrate O-polar (0001) surface. Before we… (more)

Subjects/Keywords: InGaN; Molecular Beam Epitaxy; ZnO; period shutter control method; single content

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APA (6th Edition):

Yang, C. (2011). Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712111-151511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Chen-chi. “Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy.” 2011. Thesis, NSYSU. Accessed May 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712111-151511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Chen-chi. “Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy.” 2011. Web. 26 May 2019.

Vancouver:

Yang C. Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2011. [cited 2019 May 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712111-151511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang C. Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712111-151511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

24. Kao, Hsiang-shun. Growth and Characterization of Mn Delta-Doped III-Nitrides Nanorods Fabricated by Plasma-Assisted Molecular Beam Epitaxy.

Degree: Master, Physics, 2013, NSYSU

 Plasma-assisted molecular beam epitaxy (PAMBE) synthesized diluted magnetic semiconductors nanorods on n-type Si (111) substrates are investigated in this report. Mn atoms are doped into… (more)

Subjects/Keywords: GaN; Diluted Magnetic Semiconductors; Mn:GaN; Molecular Beam Epitaxy; Nanorods

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APA (6th Edition):

Kao, H. (2013). Growth and Characterization of Mn Delta-Doped III-Nitrides Nanorods Fabricated by Plasma-Assisted Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712113-031646

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kao, Hsiang-shun. “Growth and Characterization of Mn Delta-Doped III-Nitrides Nanorods Fabricated by Plasma-Assisted Molecular Beam Epitaxy.” 2013. Thesis, NSYSU. Accessed May 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712113-031646.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kao, Hsiang-shun. “Growth and Characterization of Mn Delta-Doped III-Nitrides Nanorods Fabricated by Plasma-Assisted Molecular Beam Epitaxy.” 2013. Web. 26 May 2019.

Vancouver:

Kao H. Growth and Characterization of Mn Delta-Doped III-Nitrides Nanorods Fabricated by Plasma-Assisted Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 May 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712113-031646.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kao H. Growth and Characterization of Mn Delta-Doped III-Nitrides Nanorods Fabricated by Plasma-Assisted Molecular Beam Epitaxy. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712113-031646

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

25. Hsieh, Wan-Shan. Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy.

Degree: Master, Physics, 2014, NSYSU

 This article describes that we grew GaN films by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) on the (La,Sr)(Al,Ta)O3 substrate (100) surface. Lattice parameter of (La,Sr)(Al,Ta)O3 are… (more)

Subjects/Keywords: Molecular beam epitaxy; Non-polar; Growth temperature; LSAT; nanocrystal

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APA (6th Edition):

Hsieh, W. (2014). Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0016114-203916

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsieh, Wan-Shan. “Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy.” 2014. Thesis, NSYSU. Accessed May 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0016114-203916.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsieh, Wan-Shan. “Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy.” 2014. Web. 26 May 2019.

Vancouver:

Hsieh W. Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 May 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0016114-203916.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsieh W. Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0016114-203916

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

26. Lin, Yuan-Ting. Growth and Characterization of Diluted Magnetic Semiconductors GaMnN Thin Films and Nanorods.

Degree: PhD, Physics, 2014, NSYSU

 Plasma-assisted molecular beam epitaxy growth and characteristics of GaMnN diluted magnetic semiconductors, including epitaxial thin films and one-dimensional nanorods, are investigated in this dissertation. Both… (more)

Subjects/Keywords: Molecular Beam Epitaxy; GaMnN; Nanorods; Diluted Magnetic Semiconductors

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APA (6th Edition):

Lin, Y. (2014). Growth and Characterization of Diluted Magnetic Semiconductors GaMnN Thin Films and Nanorods. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0618114-171135

Chicago Manual of Style (16th Edition):

Lin, Yuan-Ting. “Growth and Characterization of Diluted Magnetic Semiconductors GaMnN Thin Films and Nanorods.” 2014. Doctoral Dissertation, NSYSU. Accessed May 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0618114-171135.

MLA Handbook (7th Edition):

Lin, Yuan-Ting. “Growth and Characterization of Diluted Magnetic Semiconductors GaMnN Thin Films and Nanorods.” 2014. Web. 26 May 2019.

Vancouver:

Lin Y. Growth and Characterization of Diluted Magnetic Semiconductors GaMnN Thin Films and Nanorods. [Internet] [Doctoral dissertation]. NSYSU; 2014. [cited 2019 May 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0618114-171135.

Council of Science Editors:

Lin Y. Growth and Characterization of Diluted Magnetic Semiconductors GaMnN Thin Films and Nanorods. [Doctoral Dissertation]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0618114-171135


NSYSU

27. Lin, Cheng-Wei. Molecular beam epitaxy of ZnO on nitridated LiAlO2 (100) and LiGaO2 (100) substrates.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 In this work, the influence of substrate nitridation on the subsequent growth of ZnO epilayers by plasma assisted molecular beam epitaxy (MBE) was studied. Two… (more)

Subjects/Keywords: substrate nitridation; LiAlO2; molecular beam epitaxy; LiGaO2; ZnO

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, C. (2014). Molecular beam epitaxy of ZnO on nitridated LiAlO2 (100) and LiGaO2 (100) substrates. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713114-195836

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Cheng-Wei. “Molecular beam epitaxy of ZnO on nitridated LiAlO2 (100) and LiGaO2 (100) substrates.” 2014. Thesis, NSYSU. Accessed May 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713114-195836.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Cheng-Wei. “Molecular beam epitaxy of ZnO on nitridated LiAlO2 (100) and LiGaO2 (100) substrates.” 2014. Web. 26 May 2019.

Vancouver:

Lin C. Molecular beam epitaxy of ZnO on nitridated LiAlO2 (100) and LiGaO2 (100) substrates. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 May 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713114-195836.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin C. Molecular beam epitaxy of ZnO on nitridated LiAlO2 (100) and LiGaO2 (100) substrates. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713114-195836

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

28. Chen, Yue. Characterization of CuAlSe2/Si heterostructures grown by MBE.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 We used molecular beam deposition system to grow CuAlSe2 (CAS) thin film. At first, CAS thin films were grown on glass substrates for adjusting chemical… (more)

Subjects/Keywords: molecular beam epitaxy; solar cell; CuAlSe2 /Si heterojunction; PC1D simulation tool

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, Y. (2016). Characterization of CuAlSe2/Si heterostructures grown by MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723116-125355

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yue. “Characterization of CuAlSe2/Si heterostructures grown by MBE.” 2016. Thesis, NSYSU. Accessed May 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723116-125355.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yue. “Characterization of CuAlSe2/Si heterostructures grown by MBE.” 2016. Web. 26 May 2019.

Vancouver:

Chen Y. Characterization of CuAlSe2/Si heterostructures grown by MBE. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 May 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723116-125355.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Characterization of CuAlSe2/Si heterostructures grown by MBE. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723116-125355

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

29. Lu, Szu-An. Epitaxial growth and electric properties of rock-salt Zn1-xMgxO.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 Zn1-xMgxO epilayers with x = 0.2~0.8 were grown on MgO (100) substrate by molecular beam epitaxy. The beam equivalent pressure (BEP) of zinc was controlled… (more)

Subjects/Keywords: ZnO; rocksalt; MgO; molecular beam epitaxy; Zn1-xMgxO

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lu, S. (2016). Epitaxial growth and electric properties of rock-salt Zn1-xMgxO. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719116-165854

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lu, Szu-An. “Epitaxial growth and electric properties of rock-salt Zn1-xMgxO.” 2016. Thesis, NSYSU. Accessed May 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719116-165854.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lu, Szu-An. “Epitaxial growth and electric properties of rock-salt Zn1-xMgxO.” 2016. Web. 26 May 2019.

Vancouver:

Lu S. Epitaxial growth and electric properties of rock-salt Zn1-xMgxO. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 May 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719116-165854.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu S. Epitaxial growth and electric properties of rock-salt Zn1-xMgxO. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719116-165854

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

30. Guo, Song-sain. Growth and characterization of Mn doped nonpolar m-plane III-nitrides film by plasma-assisted molecular beam epitaxy.

Degree: Master, Physics, 2017, NSYSU

 In this research, we grow m-plane gallium nitride on m-plane sapphire substrate using plasma-assisted molecular beam epitaxy (PAMBE)system with different plasma power and growth temperature.… (more)

Subjects/Keywords: molecular beam epitaxy; nonpolar; m-plane GaN; m-plane sapphire

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Guo, S. (2017). Growth and characterization of Mn doped nonpolar m-plane III-nitrides film by plasma-assisted molecular beam epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0023117-232928

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Guo, Song-sain. “Growth and characterization of Mn doped nonpolar m-plane III-nitrides film by plasma-assisted molecular beam epitaxy.” 2017. Thesis, NSYSU. Accessed May 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0023117-232928.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Guo, Song-sain. “Growth and characterization of Mn doped nonpolar m-plane III-nitrides film by plasma-assisted molecular beam epitaxy.” 2017. Web. 26 May 2019.

Vancouver:

Guo S. Growth and characterization of Mn doped nonpolar m-plane III-nitrides film by plasma-assisted molecular beam epitaxy. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 May 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0023117-232928.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Guo S. Growth and characterization of Mn doped nonpolar m-plane III-nitrides film by plasma-assisted molecular beam epitaxy. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0023117-232928

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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