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You searched for subject:(molecular beam deposition). Showing records 1 – 24 of 24 total matches.

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NSYSU

1. Huang, Teng-Hsing. Epitaxial growth and microstructure characterization of ZnO and Cu-alloyed GaN.

Degree: PhD, Materials and Optoelectronic Science, 2013, NSYSU

 The present study aims at clarifying epitaxy mechanisms of zinc oxide (ZnO) and copper alloyed gallium nitride (Ga1-xCuxN) on substrates such as LiAlO2 and Al2O3,… (more)

Subjects/Keywords: defect; chemical vapor deposition; ZnO; Ga1-xCuxN; LiAlO2; molecular beam epitaxy

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APA (6th Edition):

Huang, T. (2013). Epitaxial growth and microstructure characterization of ZnO and Cu-alloyed GaN. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0124113-021731

Chicago Manual of Style (16th Edition):

Huang, Teng-Hsing. “Epitaxial growth and microstructure characterization of ZnO and Cu-alloyed GaN.” 2013. Doctoral Dissertation, NSYSU. Accessed August 05, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0124113-021731.

MLA Handbook (7th Edition):

Huang, Teng-Hsing. “Epitaxial growth and microstructure characterization of ZnO and Cu-alloyed GaN.” 2013. Web. 05 Aug 2020.

Vancouver:

Huang T. Epitaxial growth and microstructure characterization of ZnO and Cu-alloyed GaN. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2020 Aug 05]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0124113-021731.

Council of Science Editors:

Huang T. Epitaxial growth and microstructure characterization of ZnO and Cu-alloyed GaN. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0124113-021731


Drexel University

2. Huon, Amanda. Investigating Quadruple Perovskites: Synthesis and Characterization of CaMn7O12 Films.

Degree: 2018, Drexel University

The miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One… (more)

Subjects/Keywords: Materials science; Molecular beam epitaxy; Pulsed laser deposition; Perovskites; Thin films

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APA (6th Edition):

Huon, A. (2018). Investigating Quadruple Perovskites: Synthesis and Characterization of CaMn7O12 Films. (Thesis). Drexel University. Retrieved from https://idea.library.drexel.edu/islandora/object/idea%3A8261

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huon, Amanda. “Investigating Quadruple Perovskites: Synthesis and Characterization of CaMn7O12 Films.” 2018. Thesis, Drexel University. Accessed August 05, 2020. https://idea.library.drexel.edu/islandora/object/idea%3A8261.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huon, Amanda. “Investigating Quadruple Perovskites: Synthesis and Characterization of CaMn7O12 Films.” 2018. Web. 05 Aug 2020.

Vancouver:

Huon A. Investigating Quadruple Perovskites: Synthesis and Characterization of CaMn7O12 Films. [Internet] [Thesis]. Drexel University; 2018. [cited 2020 Aug 05]. Available from: https://idea.library.drexel.edu/islandora/object/idea%3A8261.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huon A. Investigating Quadruple Perovskites: Synthesis and Characterization of CaMn7O12 Films. [Thesis]. Drexel University; 2018. Available from: https://idea.library.drexel.edu/islandora/object/idea%3A8261

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

3. Chen, Chien-Ming. Fabrication of CuGaSe2/Si heterostructures for solar-cell applications.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 For the composition control and testing electric properties, polycrystalline CuGaSe2 (CGSe) films with near-stoichiometric compositions were deposited by three-source co-evaporation on glass without the substrate… (more)

Subjects/Keywords: Molecular beam deposition; orientation domain structure; CuGaSe2 epitaxy; CuGaSe2/Si heterojunction solar cell

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APA (6th Edition):

Chen, C. (2016). Fabrication of CuGaSe2/Si heterostructures for solar-cell applications. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710116-163215

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Chien-Ming. “Fabrication of CuGaSe2/Si heterostructures for solar-cell applications.” 2016. Thesis, NSYSU. Accessed August 05, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710116-163215.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Chien-Ming. “Fabrication of CuGaSe2/Si heterostructures for solar-cell applications.” 2016. Web. 05 Aug 2020.

Vancouver:

Chen C. Fabrication of CuGaSe2/Si heterostructures for solar-cell applications. [Internet] [Thesis]. NSYSU; 2016. [cited 2020 Aug 05]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710116-163215.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen C. Fabrication of CuGaSe2/Si heterostructures for solar-cell applications. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710116-163215

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

4. Liška, Petr. Optimalizace zdroje atomů uhlíku pro růst grafenových vrstev metodou MBE: Optimization of Carbon atomic source for graphene layer growth by MBE method.

Degree: 2019, Brno University of Technology

 This bachelor’s thesis deals with the development and optimization of an atomic source of carbon atoms with the thermal energy (0.1÷1 eV). An atomic beam(more)

Subjects/Keywords: grafen; epitaxe z molekulárních svazků; atomární zdroj; depozice; graphene; molecular beam epitaxy; atomic source; deposition

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APA (6th Edition):

Liška, P. (2019). Optimalizace zdroje atomů uhlíku pro růst grafenových vrstev metodou MBE: Optimization of Carbon atomic source for graphene layer growth by MBE method. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/179370

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liška, Petr. “Optimalizace zdroje atomů uhlíku pro růst grafenových vrstev metodou MBE: Optimization of Carbon atomic source for graphene layer growth by MBE method.” 2019. Thesis, Brno University of Technology. Accessed August 05, 2020. http://hdl.handle.net/11012/179370.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liška, Petr. “Optimalizace zdroje atomů uhlíku pro růst grafenových vrstev metodou MBE: Optimization of Carbon atomic source for graphene layer growth by MBE method.” 2019. Web. 05 Aug 2020.

Vancouver:

Liška P. Optimalizace zdroje atomů uhlíku pro růst grafenových vrstev metodou MBE: Optimization of Carbon atomic source for graphene layer growth by MBE method. [Internet] [Thesis]. Brno University of Technology; 2019. [cited 2020 Aug 05]. Available from: http://hdl.handle.net/11012/179370.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liška P. Optimalizace zdroje atomů uhlíku pro růst grafenových vrstev metodou MBE: Optimization of Carbon atomic source for graphene layer growth by MBE method. [Thesis]. Brno University of Technology; 2019. Available from: http://hdl.handle.net/11012/179370

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Michigan

5. Del Gaudio, Davide. Morphological Design of Semiconductors During Molecular-Beam Epitaxy and Pulsed-Laser Deposition.

Degree: PhD, Materials Science and Engineering, 2020, University of Michigan

 Low-dimensional semiconductors exhibiting quantum confinement are promising for enhanced efficiency in energy-conversion devices, including photovoltaics, thermoelectrics, and light-emission devices. Ideal arrays of semiconductor nanostructures enable… (more)

Subjects/Keywords: thin films deposition; molecular beam epitaxy; pulsed laser deposition; quantum dots; nanowires; energy conversion devices; Materials Science and Engineering; Engineering

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APA (6th Edition):

Del Gaudio, D. (2020). Morphological Design of Semiconductors During Molecular-Beam Epitaxy and Pulsed-Laser Deposition. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/155153

Chicago Manual of Style (16th Edition):

Del Gaudio, Davide. “Morphological Design of Semiconductors During Molecular-Beam Epitaxy and Pulsed-Laser Deposition.” 2020. Doctoral Dissertation, University of Michigan. Accessed August 05, 2020. http://hdl.handle.net/2027.42/155153.

MLA Handbook (7th Edition):

Del Gaudio, Davide. “Morphological Design of Semiconductors During Molecular-Beam Epitaxy and Pulsed-Laser Deposition.” 2020. Web. 05 Aug 2020.

Vancouver:

Del Gaudio D. Morphological Design of Semiconductors During Molecular-Beam Epitaxy and Pulsed-Laser Deposition. [Internet] [Doctoral dissertation]. University of Michigan; 2020. [cited 2020 Aug 05]. Available from: http://hdl.handle.net/2027.42/155153.

Council of Science Editors:

Del Gaudio D. Morphological Design of Semiconductors During Molecular-Beam Epitaxy and Pulsed-Laser Deposition. [Doctoral Dissertation]. University of Michigan; 2020. Available from: http://hdl.handle.net/2027.42/155153


Texas State University – San Marcos

6. Ghose, Susmita. Growth and characterization of wide bandgap semiconductor oxide thin films.

Degree: PhD, Engineering Technology, 2017, Texas State University – San Marcos

 Wide bandgap semiconductors are receiving extensive attention due to their exceptional physical and chemical properties making them useful for high efficiency and high power electronic… (more)

Subjects/Keywords: Gallium oxide; Wide bandgap oxide; Molecular beam epitaxy; Pulsed laser deposition; Wide gap semiconductors; Molecular beam epitaxy; Semiconductors – Materials; Thin films; Nanostructured materials

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APA (6th Edition):

Ghose, S. (2017). Growth and characterization of wide bandgap semiconductor oxide thin films. (Doctoral Dissertation). Texas State University – San Marcos. Retrieved from https://digital.library.txstate.edu/handle/10877/6762

Chicago Manual of Style (16th Edition):

Ghose, Susmita. “Growth and characterization of wide bandgap semiconductor oxide thin films.” 2017. Doctoral Dissertation, Texas State University – San Marcos. Accessed August 05, 2020. https://digital.library.txstate.edu/handle/10877/6762.

MLA Handbook (7th Edition):

Ghose, Susmita. “Growth and characterization of wide bandgap semiconductor oxide thin films.” 2017. Web. 05 Aug 2020.

Vancouver:

Ghose S. Growth and characterization of wide bandgap semiconductor oxide thin films. [Internet] [Doctoral dissertation]. Texas State University – San Marcos; 2017. [cited 2020 Aug 05]. Available from: https://digital.library.txstate.edu/handle/10877/6762.

Council of Science Editors:

Ghose S. Growth and characterization of wide bandgap semiconductor oxide thin films. [Doctoral Dissertation]. Texas State University – San Marcos; 2017. Available from: https://digital.library.txstate.edu/handle/10877/6762


NSYSU

7. Ho, Hsieh-Chia. The effect of CuInSe2 thin film property of ZnSeTe window layer.

Degree: Master, Materials Science and Engineering, 2002, NSYSU

 Abract This paper concems studies of CIS solar cell based on ZnSe an ZnSeTe window layer. ZnSe an ZnSeTe films are grown by Molecular Beam(more)

Subjects/Keywords: ZnSe1-xTex; Lattice constant; Molecular Beam Deposition

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APA (6th Edition):

Ho, H. (2002). The effect of CuInSe2 thin film property of ZnSeTe window layer. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0727102-170454

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ho, Hsieh-Chia. “The effect of CuInSe2 thin film property of ZnSeTe window layer.” 2002. Thesis, NSYSU. Accessed August 05, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0727102-170454.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ho, Hsieh-Chia. “The effect of CuInSe2 thin film property of ZnSeTe window layer.” 2002. Web. 05 Aug 2020.

Vancouver:

Ho H. The effect of CuInSe2 thin film property of ZnSeTe window layer. [Internet] [Thesis]. NSYSU; 2002. [cited 2020 Aug 05]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0727102-170454.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ho H. The effect of CuInSe2 thin film property of ZnSeTe window layer. [Thesis]. NSYSU; 2002. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0727102-170454

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Temple University

8. Lei, Qingyu. ATOMIC CONSTRUCTION OF OXIDE THIN FILMS BY LASER MOLECULAR BEAM EPITAXY.

Degree: PhD, 2016, Temple University

Physics

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Reactive molecular-beam epitaxy (MBE)… (more)

Subjects/Keywords: Physics; Materials Science;

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APA (6th Edition):

Lei, Q. (2016). ATOMIC CONSTRUCTION OF OXIDE THIN FILMS BY LASER MOLECULAR BEAM EPITAXY. (Doctoral Dissertation). Temple University. Retrieved from http://digital.library.temple.edu/u?/p245801coll10,375725

Chicago Manual of Style (16th Edition):

Lei, Qingyu. “ATOMIC CONSTRUCTION OF OXIDE THIN FILMS BY LASER MOLECULAR BEAM EPITAXY.” 2016. Doctoral Dissertation, Temple University. Accessed August 05, 2020. http://digital.library.temple.edu/u?/p245801coll10,375725.

MLA Handbook (7th Edition):

Lei, Qingyu. “ATOMIC CONSTRUCTION OF OXIDE THIN FILMS BY LASER MOLECULAR BEAM EPITAXY.” 2016. Web. 05 Aug 2020.

Vancouver:

Lei Q. ATOMIC CONSTRUCTION OF OXIDE THIN FILMS BY LASER MOLECULAR BEAM EPITAXY. [Internet] [Doctoral dissertation]. Temple University; 2016. [cited 2020 Aug 05]. Available from: http://digital.library.temple.edu/u?/p245801coll10,375725.

Council of Science Editors:

Lei Q. ATOMIC CONSTRUCTION OF OXIDE THIN FILMS BY LASER MOLECULAR BEAM EPITAXY. [Doctoral Dissertation]. Temple University; 2016. Available from: http://digital.library.temple.edu/u?/p245801coll10,375725


Penn State University

9. Edge, Lisa Friedman. GROWTH OF AMORPHOUS AND EPITAXIAL ALTERNATIVE GATE DIELECTRICS ON SILICON BY MOLECULAR-BEAM EPITAXY AND THEIR CHARACTERIZATION.

Degree: PhD, Materials Science and Engineering, 2006, Penn State University

 The continued scaling of SiO2 in metal-oxide-semiconductor field-effect transistors (MOSFETs) is approaching its fundamental limit and in the next few years will have to be… (more)

Subjects/Keywords: high-K; molecular-beam epitaxy; LaAlO3; LaScO3; Sc2O3; La2O3; molecular-beam deposition; alternative gate dielectrics

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APA (6th Edition):

Edge, L. F. (2006). GROWTH OF AMORPHOUS AND EPITAXIAL ALTERNATIVE GATE DIELECTRICS ON SILICON BY MOLECULAR-BEAM EPITAXY AND THEIR CHARACTERIZATION. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/6941

Chicago Manual of Style (16th Edition):

Edge, Lisa Friedman. “GROWTH OF AMORPHOUS AND EPITAXIAL ALTERNATIVE GATE DIELECTRICS ON SILICON BY MOLECULAR-BEAM EPITAXY AND THEIR CHARACTERIZATION.” 2006. Doctoral Dissertation, Penn State University. Accessed August 05, 2020. https://etda.libraries.psu.edu/catalog/6941.

MLA Handbook (7th Edition):

Edge, Lisa Friedman. “GROWTH OF AMORPHOUS AND EPITAXIAL ALTERNATIVE GATE DIELECTRICS ON SILICON BY MOLECULAR-BEAM EPITAXY AND THEIR CHARACTERIZATION.” 2006. Web. 05 Aug 2020.

Vancouver:

Edge LF. GROWTH OF AMORPHOUS AND EPITAXIAL ALTERNATIVE GATE DIELECTRICS ON SILICON BY MOLECULAR-BEAM EPITAXY AND THEIR CHARACTERIZATION. [Internet] [Doctoral dissertation]. Penn State University; 2006. [cited 2020 Aug 05]. Available from: https://etda.libraries.psu.edu/catalog/6941.

Council of Science Editors:

Edge LF. GROWTH OF AMORPHOUS AND EPITAXIAL ALTERNATIVE GATE DIELECTRICS ON SILICON BY MOLECULAR-BEAM EPITAXY AND THEIR CHARACTERIZATION. [Doctoral Dissertation]. Penn State University; 2006. Available from: https://etda.libraries.psu.edu/catalog/6941


The Ohio State University

10. Chmielewski, Daniel Joseph. III-V Metamorphic Materials and Devices for Multijunction Solar Cells Grown via MBE and MOCVD.

Degree: PhD, Electrical and Computer Engineering, 2018, The Ohio State University

 III-V multijunction solar cells (MJSC) are capable of the highest conversion efficiencies among all solar cell classifications. These devices are thus of major interest for… (more)

Subjects/Keywords: Electrical Engineering; photovoltaic; solar cell; multijunction solar cell; tunnel junction; III-V semiconductor; epitaxy; metamorphic epitaxy; molecular beam epitaxy; metal-organic chemical vapor deposition; GaAsP; AlGaAsP; GaInP; AlGaInP; wide bandgap

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APA (6th Edition):

Chmielewski, D. J. (2018). III-V Metamorphic Materials and Devices for Multijunction Solar Cells Grown via MBE and MOCVD. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1534707692114982

Chicago Manual of Style (16th Edition):

Chmielewski, Daniel Joseph. “III-V Metamorphic Materials and Devices for Multijunction Solar Cells Grown via MBE and MOCVD.” 2018. Doctoral Dissertation, The Ohio State University. Accessed August 05, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1534707692114982.

MLA Handbook (7th Edition):

Chmielewski, Daniel Joseph. “III-V Metamorphic Materials and Devices for Multijunction Solar Cells Grown via MBE and MOCVD.” 2018. Web. 05 Aug 2020.

Vancouver:

Chmielewski DJ. III-V Metamorphic Materials and Devices for Multijunction Solar Cells Grown via MBE and MOCVD. [Internet] [Doctoral dissertation]. The Ohio State University; 2018. [cited 2020 Aug 05]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1534707692114982.

Council of Science Editors:

Chmielewski DJ. III-V Metamorphic Materials and Devices for Multijunction Solar Cells Grown via MBE and MOCVD. [Doctoral Dissertation]. The Ohio State University; 2018. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1534707692114982


The Ohio State University

11. Boeckl, John J. Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates.

Degree: PhD, Electrical Engineering, 2005, The Ohio State University

 In this dissertation we report on the structural quality of the GaAs/Ge interface for GaAs nucleation by solid source molecular beam epitaxy (MBE). Through feedback… (more)

Subjects/Keywords: molecular beam epitaxy; MBE; metal organic chemical vapor deposition; MOCVD; electron beam induced current; EBIC; defects; transmission electron microscopy; TEM

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APA (6th Edition):

Boeckl, J. J. (2005). Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970

Chicago Manual of Style (16th Edition):

Boeckl, John J. “Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates.” 2005. Doctoral Dissertation, The Ohio State University. Accessed August 05, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970.

MLA Handbook (7th Edition):

Boeckl, John J. “Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates.” 2005. Web. 05 Aug 2020.

Vancouver:

Boeckl JJ. Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates. [Internet] [Doctoral dissertation]. The Ohio State University; 2005. [cited 2020 Aug 05]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970.

Council of Science Editors:

Boeckl JJ. Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates. [Doctoral Dissertation]. The Ohio State University; 2005. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970

12. Niu, Gang. Epitaxy of crystalline oxides for functional materials integration on silicon : Oxydes épitaxiés pour l'intégration de matériaux fonctionnels sur silicium.

Degree: Docteur es, Electronique, Electrotechnique et Automatique, 2010, Ecully, Ecole centrale de Lyon

Les oxydes forment une classe de matériaux qui couvrent un vaste spectre de fonctionnalités: diélectricité, semiconductivité, métallicité, supraconductivité, optique non linéaire, acoustique, piézoélectricité, ferroélectricité, ferromagnétisme…… (more)

Subjects/Keywords: Oxydes cristallins; Oxydes “high-k”; Oxydes fonctionnels; Germanium; Hétéroepitaxie; EOT; Recuit post-dépôt; Capacité MOS; Cycle d’hystérésis; Epitaxie par jets moléculaires; Crystalline oxides; High-k oxides; Functional oxides; Germanium; Heteroepitaxy; EOT; Post-deposition Annealing (PDA); MOS capacity; Hysteresis loops; Molecular Beam Epitaxy

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APA (6th Edition):

Niu, G. (2010). Epitaxy of crystalline oxides for functional materials integration on silicon : Oxydes épitaxiés pour l'intégration de matériaux fonctionnels sur silicium. (Doctoral Dissertation). Ecully, Ecole centrale de Lyon. Retrieved from http://www.theses.fr/2010ECDL0028

Chicago Manual of Style (16th Edition):

Niu, Gang. “Epitaxy of crystalline oxides for functional materials integration on silicon : Oxydes épitaxiés pour l'intégration de matériaux fonctionnels sur silicium.” 2010. Doctoral Dissertation, Ecully, Ecole centrale de Lyon. Accessed August 05, 2020. http://www.theses.fr/2010ECDL0028.

MLA Handbook (7th Edition):

Niu, Gang. “Epitaxy of crystalline oxides for functional materials integration on silicon : Oxydes épitaxiés pour l'intégration de matériaux fonctionnels sur silicium.” 2010. Web. 05 Aug 2020.

Vancouver:

Niu G. Epitaxy of crystalline oxides for functional materials integration on silicon : Oxydes épitaxiés pour l'intégration de matériaux fonctionnels sur silicium. [Internet] [Doctoral dissertation]. Ecully, Ecole centrale de Lyon; 2010. [cited 2020 Aug 05]. Available from: http://www.theses.fr/2010ECDL0028.

Council of Science Editors:

Niu G. Epitaxy of crystalline oxides for functional materials integration on silicon : Oxydes épitaxiés pour l'intégration de matériaux fonctionnels sur silicium. [Doctoral Dissertation]. Ecully, Ecole centrale de Lyon; 2010. Available from: http://www.theses.fr/2010ECDL0028

13. Hamedani Golshan, Negar. Understanding electrically active interface formation on wide bandgap semiconductors through molecular beam epitaxy using Fe₃O₄ for spintronics as a base case.

Degree: PhD, Department of Chemical Engineering, 2017, Northeastern University

 Nanoelectronics, complex heterostructures, and engineered 3D matrix materials are quickly advancing from research possibilities to manufacturing challenges for applications ranging from high-power devices to solar… (more)

Subjects/Keywords: deposition; molecular beam epitaxy; nanoelectronics; spintronics; surface characterization; wide band-gap semiconductor

…laser deposition (PLD) and molecular beam epitaxy (MBE). In the proposed… …technology still requires research. Molecular beam epitaxy (MBE) is a perfect tool to… …substrate and thin film. 2.9 Thin film growth mechanisms Through molecular beam epitaxy, it is… …study, molecular beam epitaxy (MBE) will be employed, to understand the nucleation… …understanding the nucleation and growth mechanisms of thin films. 2.10.2 Molecular Beam Epitaxy… 

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APA (6th Edition):

Hamedani Golshan, N. (2017). Understanding electrically active interface formation on wide bandgap semiconductors through molecular beam epitaxy using Fe₃O₄ for spintronics as a base case. (Doctoral Dissertation). Northeastern University. Retrieved from http://hdl.handle.net/2047/D20272531

Chicago Manual of Style (16th Edition):

Hamedani Golshan, Negar. “Understanding electrically active interface formation on wide bandgap semiconductors through molecular beam epitaxy using Fe₃O₄ for spintronics as a base case.” 2017. Doctoral Dissertation, Northeastern University. Accessed August 05, 2020. http://hdl.handle.net/2047/D20272531.

MLA Handbook (7th Edition):

Hamedani Golshan, Negar. “Understanding electrically active interface formation on wide bandgap semiconductors through molecular beam epitaxy using Fe₃O₄ for spintronics as a base case.” 2017. Web. 05 Aug 2020.

Vancouver:

Hamedani Golshan N. Understanding electrically active interface formation on wide bandgap semiconductors through molecular beam epitaxy using Fe₃O₄ for spintronics as a base case. [Internet] [Doctoral dissertation]. Northeastern University; 2017. [cited 2020 Aug 05]. Available from: http://hdl.handle.net/2047/D20272531.

Council of Science Editors:

Hamedani Golshan N. Understanding electrically active interface formation on wide bandgap semiconductors through molecular beam epitaxy using Fe₃O₄ for spintronics as a base case. [Doctoral Dissertation]. Northeastern University; 2017. Available from: http://hdl.handle.net/2047/D20272531

14. Khanaki, Alireza. Molecular Beam Epitaxy Growth of Hexagonal Boron Nitride/Graphene Heterostructures, Hexagonal Boron Nitride Layers and Cubic Boron Nitride Nanodots.

Degree: Materials Science and Engineering, 2017, University of California – Riverside

 Low-dimensional materials continue to attract and involve the minds and labor of scientists and engineers around the world as they are offering a set of… (more)

Subjects/Keywords: Materials Science; Nanoscience; 2D Materials; Boron Nitride; Graphene; Materials Science; Molecular Beam Epitaxy; Thin Film Deposition

…vii ABSTRACT OF THE DISSERTATION Molecular Beam Epitaxy Growth of Hexagonal Boron Nitride… …characterization of some of such low-dimensional materials with molecular beam epitaxy (MBE)… …BN) .… 9 1.3. Molecular beam epitaxy (MBE)… …have demonstrated molecular beam epitaxy (MBE) growth of single/bilayer G on Co… …molecular beam epitaxy (MBE) have been widely used for the growth of h-BN/G… 

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APA (6th Edition):

Khanaki, A. (2017). Molecular Beam Epitaxy Growth of Hexagonal Boron Nitride/Graphene Heterostructures, Hexagonal Boron Nitride Layers and Cubic Boron Nitride Nanodots. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/3mh046hg

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Khanaki, Alireza. “Molecular Beam Epitaxy Growth of Hexagonal Boron Nitride/Graphene Heterostructures, Hexagonal Boron Nitride Layers and Cubic Boron Nitride Nanodots.” 2017. Thesis, University of California – Riverside. Accessed August 05, 2020. http://www.escholarship.org/uc/item/3mh046hg.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Khanaki, Alireza. “Molecular Beam Epitaxy Growth of Hexagonal Boron Nitride/Graphene Heterostructures, Hexagonal Boron Nitride Layers and Cubic Boron Nitride Nanodots.” 2017. Web. 05 Aug 2020.

Vancouver:

Khanaki A. Molecular Beam Epitaxy Growth of Hexagonal Boron Nitride/Graphene Heterostructures, Hexagonal Boron Nitride Layers and Cubic Boron Nitride Nanodots. [Internet] [Thesis]. University of California – Riverside; 2017. [cited 2020 Aug 05]. Available from: http://www.escholarship.org/uc/item/3mh046hg.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Khanaki A. Molecular Beam Epitaxy Growth of Hexagonal Boron Nitride/Graphene Heterostructures, Hexagonal Boron Nitride Layers and Cubic Boron Nitride Nanodots. [Thesis]. University of California – Riverside; 2017. Available from: http://www.escholarship.org/uc/item/3mh046hg

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. Chaluvadi, Sandeep kumar. Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications : Effet de la contrainte liée à l’épitaxie sur l’anisotropie magnétique dans les couches minces de LSMO en vue d’applications spintroniques.

Degree: Docteur es, Electronique, microelectronique, optique et lasers, optoelectronique microondes, 2017, Normandie

Nous présentons une étude des effets de contrainte induits par l’épitaxie dans des couches minces La1-xSrxMnO3 (LSMO) (001) (x = 0.33) pour 3 épaisseurs de… (more)

Subjects/Keywords: Déformation; Dépôt par ablation laser pulsé; Épitaxie par jets moléculaires; Anisotropie magnétique; Magnétométrie magnéto-optique Kerr; Manganese oxide; Epitaxy; Strain; Thin films; Pulsed laser deposition; Molecular beam epitaxy; Magnetic anisotropy; X-ray diffraction; Magneto-optical Kerr magnetometry

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APA (6th Edition):

Chaluvadi, S. k. (2017). Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications : Effet de la contrainte liée à l’épitaxie sur l’anisotropie magnétique dans les couches minces de LSMO en vue d’applications spintroniques. (Doctoral Dissertation). Normandie. Retrieved from http://www.theses.fr/2017NORMC248

Chicago Manual of Style (16th Edition):

Chaluvadi, Sandeep kumar. “Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications : Effet de la contrainte liée à l’épitaxie sur l’anisotropie magnétique dans les couches minces de LSMO en vue d’applications spintroniques.” 2017. Doctoral Dissertation, Normandie. Accessed August 05, 2020. http://www.theses.fr/2017NORMC248.

MLA Handbook (7th Edition):

Chaluvadi, Sandeep kumar. “Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications : Effet de la contrainte liée à l’épitaxie sur l’anisotropie magnétique dans les couches minces de LSMO en vue d’applications spintroniques.” 2017. Web. 05 Aug 2020.

Vancouver:

Chaluvadi Sk. Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications : Effet de la contrainte liée à l’épitaxie sur l’anisotropie magnétique dans les couches minces de LSMO en vue d’applications spintroniques. [Internet] [Doctoral dissertation]. Normandie; 2017. [cited 2020 Aug 05]. Available from: http://www.theses.fr/2017NORMC248.

Council of Science Editors:

Chaluvadi Sk. Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications : Effet de la contrainte liée à l’épitaxie sur l’anisotropie magnétique dans les couches minces de LSMO en vue d’applications spintroniques. [Doctoral Dissertation]. Normandie; 2017. Available from: http://www.theses.fr/2017NORMC248

16. Gherasoiu, Iulian. Metal-organic molecular beam epitaxy of algan.

Degree: Electrical Engineering, 2004, Texas Tech University

Subjects/Keywords: Metal organic chemical vapor deposition; Organoaluminum compounds; Organogallium compounds; Molecular beam epitaxy

deposition. MOMBE - Metalorganic molecular beam epitaxy. MOVPE - Metalorganic vapor phase epitaxy… …MBE - Molecular beam epitaxy. MO - Metalorganic. MOCVD - Metalorganic chemical vapor… …nitride semiconductors, Davis et al. [1]. Molecular beam epitaxy (MBE), with… …Beam equivalent pressure. CLT - Central limit theorem. CRD - Complete randomized design. df… …X-ray diffraction. Xll CHAPTER 1 INTRODUCTION Metalorganic chemical vapor deposition… 

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APA (6th Edition):

Gherasoiu, I. (2004). Metal-organic molecular beam epitaxy of algan. (Thesis). Texas Tech University. Retrieved from http://hdl.handle.net/2346/19292

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gherasoiu, Iulian. “Metal-organic molecular beam epitaxy of algan.” 2004. Thesis, Texas Tech University. Accessed August 05, 2020. http://hdl.handle.net/2346/19292.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gherasoiu, Iulian. “Metal-organic molecular beam epitaxy of algan.” 2004. Web. 05 Aug 2020.

Vancouver:

Gherasoiu I. Metal-organic molecular beam epitaxy of algan. [Internet] [Thesis]. Texas Tech University; 2004. [cited 2020 Aug 05]. Available from: http://hdl.handle.net/2346/19292.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gherasoiu I. Metal-organic molecular beam epitaxy of algan. [Thesis]. Texas Tech University; 2004. Available from: http://hdl.handle.net/2346/19292

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

17. Knotek, Miroslav. Depozice gallium-nitridových tenkých vrstev na křemíkové substráty strukturované elektronovou litografií: Gallium-nitride thin-film deposition on substrates structured by electron beam lithography.

Degree: 2019, Brno University of Technology

This bachelor's thesis deals with a fabrication of gallium nitride (GaN) thin films on silicon substrates, which were structured by electron beam lithography. In thesis, different resists for selective growth of nanostructures at elevated temperatures are examined. Advisors/Committee Members: Voborný, Stanislav (advisor), Mach, Jindřich (referee).

Subjects/Keywords: Nitrid gallia; elektronová litografie; depozice tenkých vrstev; selektivní růst; molekulární epitaxe; pozitivní a negativní rezisty.; Gallium nitride; electron beam lithography; deposition thin films; selective growth; molecular epitaxy; positive and negative resists.

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APA (6th Edition):

Knotek, M. (2019). Depozice gallium-nitridových tenkých vrstev na křemíkové substráty strukturované elektronovou litografií: Gallium-nitride thin-film deposition on substrates structured by electron beam lithography. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/27902

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Knotek, Miroslav. “Depozice gallium-nitridových tenkých vrstev na křemíkové substráty strukturované elektronovou litografií: Gallium-nitride thin-film deposition on substrates structured by electron beam lithography.” 2019. Thesis, Brno University of Technology. Accessed August 05, 2020. http://hdl.handle.net/11012/27902.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Knotek, Miroslav. “Depozice gallium-nitridových tenkých vrstev na křemíkové substráty strukturované elektronovou litografií: Gallium-nitride thin-film deposition on substrates structured by electron beam lithography.” 2019. Web. 05 Aug 2020.

Vancouver:

Knotek M. Depozice gallium-nitridových tenkých vrstev na křemíkové substráty strukturované elektronovou litografií: Gallium-nitride thin-film deposition on substrates structured by electron beam lithography. [Internet] [Thesis]. Brno University of Technology; 2019. [cited 2020 Aug 05]. Available from: http://hdl.handle.net/11012/27902.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Knotek M. Depozice gallium-nitridových tenkých vrstev na křemíkové substráty strukturované elektronovou litografií: Gallium-nitride thin-film deposition on substrates structured by electron beam lithography. [Thesis]. Brno University of Technology; 2019. Available from: http://hdl.handle.net/11012/27902

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

18. Pritchett, David Chu. Novel III-Nitride growth by ultraviolet radiation assisted metal organic molecular beam epitaxy.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 While modern epitaxial methods enable precise, monolayer (ML) control of the thin film deposition process, the complexity of certain device structures is ultimately limited by… (more)

Subjects/Keywords: Nitride; Photodesorption; Photoassisted; Deposition; Epitaxy; Semiconductor; Molecular beam epitaxy; Ultraviolet radiation

molecular beam epitaxy mass-to-charge ratio monoethylgallium magnesium concentration gallium… …metal organic molecular beam epitaxy metal organic vapor phase epitaxy multiple quantum well… …22 Fig. 1.17. Basic (a) doubly clamped and (b) singly clamped beam… …JNH3 = 19 sccm, and JTEGa = 0.20 sccm are constant during the entire deposition… …entire deposition… 

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APA (6th Edition):

Pritchett, D. C. (2009). Novel III-Nitride growth by ultraviolet radiation assisted metal organic molecular beam epitaxy. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/28140

Chicago Manual of Style (16th Edition):

Pritchett, David Chu. “Novel III-Nitride growth by ultraviolet radiation assisted metal organic molecular beam epitaxy.” 2009. Doctoral Dissertation, Georgia Tech. Accessed August 05, 2020. http://hdl.handle.net/1853/28140.

MLA Handbook (7th Edition):

Pritchett, David Chu. “Novel III-Nitride growth by ultraviolet radiation assisted metal organic molecular beam epitaxy.” 2009. Web. 05 Aug 2020.

Vancouver:

Pritchett DC. Novel III-Nitride growth by ultraviolet radiation assisted metal organic molecular beam epitaxy. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2020 Aug 05]. Available from: http://hdl.handle.net/1853/28140.

Council of Science Editors:

Pritchett DC. Novel III-Nitride growth by ultraviolet radiation assisted metal organic molecular beam epitaxy. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/28140


University of Florida

19. Kemper, Travis William. Molecular Dynamics Method Development and Simulations of Molecule-Polymer Interactions.

Degree: PhD, Materials Science and Engineering, 2011, University of Florida

 Modifying the surface of a material can alter its chemical resistance, frictional properties, biocampatability, adhesive properties and electrical properties, while maintaining the bulk properties. Treatments… (more)

Subjects/Keywords: Argon; Atoms; Carbon; Energy; Hydrogen; Molecules; Oxygen; Polymers; Simulations; Thiophenes; assisted  – beam  – bond  – deposition  – dynamics  – electronics  – empirical  – film  – hydrocarbon  – interaction  – interactions  – ion  – modification  – molecular  – oligomer  – oligomers  – order  – organic  – plasma  – polymer  – polymerization  – potential  – reactive  – rebo  – sexithiophene  – simulation  – spiad  – sulfur  – surface  – terthiophene  – thin  – thiophene

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APA (6th Edition):

Kemper, T. W. (2011). Molecular Dynamics Method Development and Simulations of Molecule-Polymer Interactions. (Doctoral Dissertation). University of Florida. Retrieved from https://ufdc.ufl.edu/UFE0043360

Chicago Manual of Style (16th Edition):

Kemper, Travis William. “Molecular Dynamics Method Development and Simulations of Molecule-Polymer Interactions.” 2011. Doctoral Dissertation, University of Florida. Accessed August 05, 2020. https://ufdc.ufl.edu/UFE0043360.

MLA Handbook (7th Edition):

Kemper, Travis William. “Molecular Dynamics Method Development and Simulations of Molecule-Polymer Interactions.” 2011. Web. 05 Aug 2020.

Vancouver:

Kemper TW. Molecular Dynamics Method Development and Simulations of Molecule-Polymer Interactions. [Internet] [Doctoral dissertation]. University of Florida; 2011. [cited 2020 Aug 05]. Available from: https://ufdc.ufl.edu/UFE0043360.

Council of Science Editors:

Kemper TW. Molecular Dynamics Method Development and Simulations of Molecule-Polymer Interactions. [Doctoral Dissertation]. University of Florida; 2011. Available from: https://ufdc.ufl.edu/UFE0043360

20. Lu, Yun. III-V compound semiconductor selective area epitaxy on silicon substrates.

Degree: MS, 1200, 2014, University of Illinois – Urbana-Champaign

 In electronics, the integration of III-V compound semiconductor materials and silicon is a way to solve the silicon feature size limit and power consumption problems… (more)

Subjects/Keywords: selective area epitaxy; III-V material; silicon substrate; monolithic device; Metal organic chemical vapor deposition (MOCVD); Molecular beam epitaxy (MBE)

…The molecular beam Ga source is flowed into the chamber to deposit approximately one… …deposition on the masked region during the epitaxial growth. Epitaxial layers locally grow on the… …selectively deposited on the exposed surface of the Si substrate, while no deposition on the… …deposition system. The growth pressure was about 25 28 mTorr. The thickness of this graded layer… …x28;100) Si substrate with an e-beam assisted sputter. Then, a 10-nm-thick polymer e-beam… 

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APA (6th Edition):

Lu, Y. (2014). III-V compound semiconductor selective area epitaxy on silicon substrates. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/49642

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lu, Yun. “III-V compound semiconductor selective area epitaxy on silicon substrates.” 2014. Thesis, University of Illinois – Urbana-Champaign. Accessed August 05, 2020. http://hdl.handle.net/2142/49642.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lu, Yun. “III-V compound semiconductor selective area epitaxy on silicon substrates.” 2014. Web. 05 Aug 2020.

Vancouver:

Lu Y. III-V compound semiconductor selective area epitaxy on silicon substrates. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2014. [cited 2020 Aug 05]. Available from: http://hdl.handle.net/2142/49642.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu Y. III-V compound semiconductor selective area epitaxy on silicon substrates. [Thesis]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/49642

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Cornell University

21. Killampalli, Aravind. Interface formation and thin film deposition for molecular and organic electronics .

Degree: 2005, Cornell University

 Organic materials are playing an increasing role in modern microelectronic devices-beyond their traditional role as photoresists. Emerging applications such as low-? dielectrics, semiconductors and components… (more)

Subjects/Keywords: pentacene; self-assembled monolayer; TDMAT; thin film deposition; inorganic-organic interface; organic electronics; organic thin film transistors; nucleation; HMDS; supersonic molecular beam; x-ray photoelectron spectroscopy (XPS); atomic force microscopy (AFM)

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APA (6th Edition):

Killampalli, A. (2005). Interface formation and thin film deposition for molecular and organic electronics . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/2502

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Killampalli, Aravind. “Interface formation and thin film deposition for molecular and organic electronics .” 2005. Thesis, Cornell University. Accessed August 05, 2020. http://hdl.handle.net/1813/2502.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Killampalli, Aravind. “Interface formation and thin film deposition for molecular and organic electronics .” 2005. Web. 05 Aug 2020.

Vancouver:

Killampalli A. Interface formation and thin film deposition for molecular and organic electronics . [Internet] [Thesis]. Cornell University; 2005. [cited 2020 Aug 05]. Available from: http://hdl.handle.net/1813/2502.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Killampalli A. Interface formation and thin film deposition for molecular and organic electronics . [Thesis]. Cornell University; 2005. Available from: http://hdl.handle.net/1813/2502

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

22. Mohapatra, Chandra. Growth and characterization of epitaxial graphene films by Molecular Beam Epitaxy.

Degree: PhD, 0240, 2012, University of Illinois – Urbana-Champaign

 Growing macroscopic graphene films with the aim of making graphene commerically viable is being researched a lot recently. Although graphene isolated by exfoliation of Highly… (more)

Subjects/Keywords: Highly Oriented Pyrolytic Graphite (HOPG); Molecular Beam Epitaxy (MBE); Mono Layer (ML); Chemical Vapor Deposition (CVD); Quartz Crystal Monitor (QCM); Reflection High Energy Electron Diffraction (RHEED); Atomic Force Microscopy (AFM); X-ray Photoelectron Spectroscopy (XPS); Auger Electron Spectroscopy (AES); Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS); Variable Range Hopping (VRH); Weak Localization (WL); Coefficient of Thermal Expansion (CTE); Polymethyl Methacrylate (PMMA); Polyethylene Terephthalate (PET); Pyrolytic Boron Nitride (PBN); Frederick Seitz Material Research Laboratory (MRL); Center for Microanalysis and Materials (CMM); Isopropyl Alcohol (IPA); Trichloro Ethylene (TCE); Ultra High Vacuum (UHV); Scanning Tunneling Microscopy (STM ); Low Energy Electron Diffraction (LEED); Full width at Half Maximum (FWHM); Bilayer Pseudo Spin Field Effect Transistor (BiSFET); Field Effect Transistor (FET); Chemical Mechanical Polished (CMP)

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APA (6th Edition):

Mohapatra, C. (2012). Growth and characterization of epitaxial graphene films by Molecular Beam Epitaxy. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/31913

Chicago Manual of Style (16th Edition):

Mohapatra, Chandra. “Growth and characterization of epitaxial graphene films by Molecular Beam Epitaxy.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed August 05, 2020. http://hdl.handle.net/2142/31913.

MLA Handbook (7th Edition):

Mohapatra, Chandra. “Growth and characterization of epitaxial graphene films by Molecular Beam Epitaxy.” 2012. Web. 05 Aug 2020.

Vancouver:

Mohapatra C. Growth and characterization of epitaxial graphene films by Molecular Beam Epitaxy. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2020 Aug 05]. Available from: http://hdl.handle.net/2142/31913.

Council of Science Editors:

Mohapatra C. Growth and characterization of epitaxial graphene films by Molecular Beam Epitaxy. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/31913


North Carolina State University

23. Hydrick, Jennifer Marie. Epitaxial Oxide Growth on Si(001) for Floating Epitaxy, a Novel Process for Silicon-on-Insulator Wafer Production.

Degree: MS, Materials Science and Engineering, 2007, North Carolina State University

 As scaling continues in the semiconductor industry, silicon-on-insulator (SOI) wafers are increasingly becoming the substrate of choice, due to higher channel mobility, effective device isolation,… (more)

Subjects/Keywords: lattice parameter; scaling; stability; solid solution; germanium; barium oxide; Ba1-xSrxO; silicon; strontium titanate; strontium oxide; BaO; SrO; Ca1-xSrxTiO3; calcium titanate; molecular beam epitaxy; RHEED; reflection high energy electron diffraction; MBE; AFM; CaTiO3; SrTiO3; barium strontium oxide; HRTEM; TEM; Mg; template; silicon-on-insulator; Si; Ca; O; Sr; Ti; Ba; lattice match; insulator; (001); epitaxy; Floating Epitaxy; RBS; XRD; epitaxial; SOI; SIMS; titanium; in-situ; calcium strontium titanate; ITRS; solid phase epitaxy; growth; deposition; semiconductor; heteroepitaxy; strontium; barium; silicon on insulator

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APA (6th Edition):

Hydrick, J. M. (2007). Epitaxial Oxide Growth on Si(001) for Floating Epitaxy, a Novel Process for Silicon-on-Insulator Wafer Production. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/2307

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hydrick, Jennifer Marie. “Epitaxial Oxide Growth on Si(001) for Floating Epitaxy, a Novel Process for Silicon-on-Insulator Wafer Production.” 2007. Thesis, North Carolina State University. Accessed August 05, 2020. http://www.lib.ncsu.edu/resolver/1840.16/2307.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hydrick, Jennifer Marie. “Epitaxial Oxide Growth on Si(001) for Floating Epitaxy, a Novel Process for Silicon-on-Insulator Wafer Production.” 2007. Web. 05 Aug 2020.

Vancouver:

Hydrick JM. Epitaxial Oxide Growth on Si(001) for Floating Epitaxy, a Novel Process for Silicon-on-Insulator Wafer Production. [Internet] [Thesis]. North Carolina State University; 2007. [cited 2020 Aug 05]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2307.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hydrick JM. Epitaxial Oxide Growth on Si(001) for Floating Epitaxy, a Novel Process for Silicon-on-Insulator Wafer Production. [Thesis]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2307

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

24. Jur, Jesse Stephen. Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications.

Degree: PhD, Materials Science and Engineering, 2007, North Carolina State University

 The ability to improve performance of the high-end metal oxide semiconductor field effect transistor (MOSFET) is highly reliant on the dimensional scaling of such a… (more)

Subjects/Keywords: dc magnetron sputtering; physical vapor deposition; tungsten oxide; tungsten; W; tantalum nitride; TaN; lanthanum; lanthanum oxide; La; La2O3; La2SiO5; lanthanum silicate; La2Si2O7; Ho; holmium; holmium oxide; cation diffusion; back-side SIMS; secondary ion mass spectroscopy; SIMS; XRD; x-ray diffraction; molecular beam deposition; PMA; XPS; x-ray photoemission spectroscopy; post metallization anneal; RCA; chemical oxide; metal oxide semiconductor field effect transistor; MBE; silica; SiO2; interfacial layer; gate dielectric; dielectric; silicate; oxide; high-kappa; EOT; equivalent oxide thickness; high-k; band diagram; valance band offset; conduction band offset; band gap energy; effective work function; work function; voltage shift; threshold voltage; flat band voltage; leakage current; capacitance; mobility; electronic materials; scaling; Moore?s Law; MIS; MOS; MOSFET; high resolution transmission electron microscopy; HRTEM; RTA; rapid thermal anneal; PVD; tantalum; Ta; gate electrode; metal electrode; hafnium silicate; hafnium oxide; hafnium; ytterbium; ytterbium oxide; Yb; dysprosium oxide; dysprosium; Dy; E-beam evaporation; thermal evaporation; forming gas anneal; ozone; ammonia anneal; FGA

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APA (6th Edition):

Jur, J. S. (2007). Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5447

Chicago Manual of Style (16th Edition):

Jur, Jesse Stephen. “Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications.” 2007. Doctoral Dissertation, North Carolina State University. Accessed August 05, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5447.

MLA Handbook (7th Edition):

Jur, Jesse Stephen. “Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications.” 2007. Web. 05 Aug 2020.

Vancouver:

Jur JS. Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications. [Internet] [Doctoral dissertation]. North Carolina State University; 2007. [cited 2020 Aug 05]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5447.

Council of Science Editors:

Jur JS. Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications. [Doctoral Dissertation]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5447

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