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You searched for subject:(metal organic chemical vapor deposition). Showing records 1 – 30 of 58806 total matches.

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Nelson Mandela Metropolitan University

1. Shamba, Precious. MOCVD growth and electrical characterisation of InAs thin films.

Degree: MSc, Faculty of Science, 2007, Nelson Mandela Metropolitan University

 In this work, a systematic study relating the surface morphologies, electrical and structural properties of both doped and undoped InAs and InAsSb epitaxial films grown… (more)

Subjects/Keywords: Metal organic chemical vapor deposition

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APA (6th Edition):

Shamba, P. (2007). MOCVD growth and electrical characterisation of InAs thin films. (Masters Thesis). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/706

Chicago Manual of Style (16th Edition):

Shamba, Precious. “MOCVD growth and electrical characterisation of InAs thin films.” 2007. Masters Thesis, Nelson Mandela Metropolitan University. Accessed October 16, 2019. http://hdl.handle.net/10948/706.

MLA Handbook (7th Edition):

Shamba, Precious. “MOCVD growth and electrical characterisation of InAs thin films.” 2007. Web. 16 Oct 2019.

Vancouver:

Shamba P. MOCVD growth and electrical characterisation of InAs thin films. [Internet] [Masters thesis]. Nelson Mandela Metropolitan University; 2007. [cited 2019 Oct 16]. Available from: http://hdl.handle.net/10948/706.

Council of Science Editors:

Shamba P. MOCVD growth and electrical characterisation of InAs thin films. [Masters Thesis]. Nelson Mandela Metropolitan University; 2007. Available from: http://hdl.handle.net/10948/706


Hong Kong University of Science and Technology

2. Lai, Billy ECE. Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si.

Degree: 2018, Hong Kong University of Science and Technology

 Optoelectronics operating at the mid-infrared wavelength have been increasingly common in a wide range of areas including the defense industry, the automotive industry, and even… (more)

Subjects/Keywords: Semiconductors; Metal organic chemical vapor deposition; Epitaxy

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APA (6th Edition):

Lai, B. E. (2018). Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-991012637367403412 ; http://repository.ust.hk/ir/bitstream/1783.1-95901/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lai, Billy ECE. “Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si.” 2018. Thesis, Hong Kong University of Science and Technology. Accessed October 16, 2019. https://doi.org/10.14711/thesis-991012637367403412 ; http://repository.ust.hk/ir/bitstream/1783.1-95901/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lai, Billy ECE. “Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si.” 2018. Web. 16 Oct 2019.

Vancouver:

Lai BE. Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2018. [cited 2019 Oct 16]. Available from: https://doi.org/10.14711/thesis-991012637367403412 ; http://repository.ust.hk/ir/bitstream/1783.1-95901/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lai BE. Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si. [Thesis]. Hong Kong University of Science and Technology; 2018. Available from: https://doi.org/10.14711/thesis-991012637367403412 ; http://repository.ust.hk/ir/bitstream/1783.1-95901/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

3. Soussi, Khaled. Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4.

Degree: Docteur es, Chimie, 2017, Lyon

 La production de polyéthylène par la polymérisation de l'éthylène est un procédé industriel de grande importance. L'éthylène, issue de la pétrochimie contient des impuretés d'acétylène… (more)

Subjects/Keywords: Al13Fe4; Triazidures; Metal organic chemical vapor deposition (MOCVD); Précurseurs; Nanoparticules; Al13Fe4; Metal organic chemical vapor deposition (MOCVD); Triazenides; Nanoparticles; Precursors; 541

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APA (6th Edition):

Soussi, K. (2017). Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2017LYSE1006

Chicago Manual of Style (16th Edition):

Soussi, Khaled. “Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4.” 2017. Doctoral Dissertation, Lyon. Accessed October 16, 2019. http://www.theses.fr/2017LYSE1006.

MLA Handbook (7th Edition):

Soussi, Khaled. “Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4.” 2017. Web. 16 Oct 2019.

Vancouver:

Soussi K. Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4. [Internet] [Doctoral dissertation]. Lyon; 2017. [cited 2019 Oct 16]. Available from: http://www.theses.fr/2017LYSE1006.

Council of Science Editors:

Soussi K. Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4. [Doctoral Dissertation]. Lyon; 2017. Available from: http://www.theses.fr/2017LYSE1006


Rutgers University

4. Meng, Jiandong, 1983-. Simulation and optimization of the GaN MOCVD process.

Degree: PhD, Mechanical and Aerospace Engineering, 2014, Rutgers University

A detailed mathematical model for the growth of gallium nitride (GaN) in metalorganic chemical vapor deposition (MOCVD) process is developed, and the complete chemical mechanism… (more)

Subjects/Keywords: Gallium nitride; Metal organic chemical vapor deposition; Mathematical models

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APA (6th Edition):

Meng, Jiandong, 1. (2014). Simulation and optimization of the GaN MOCVD process. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/45362/

Chicago Manual of Style (16th Edition):

Meng, Jiandong, 1983-. “Simulation and optimization of the GaN MOCVD process.” 2014. Doctoral Dissertation, Rutgers University. Accessed October 16, 2019. https://rucore.libraries.rutgers.edu/rutgers-lib/45362/.

MLA Handbook (7th Edition):

Meng, Jiandong, 1983-. “Simulation and optimization of the GaN MOCVD process.” 2014. Web. 16 Oct 2019.

Vancouver:

Meng, Jiandong 1. Simulation and optimization of the GaN MOCVD process. [Internet] [Doctoral dissertation]. Rutgers University; 2014. [cited 2019 Oct 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/45362/.

Council of Science Editors:

Meng, Jiandong 1. Simulation and optimization of the GaN MOCVD process. [Doctoral Dissertation]. Rutgers University; 2014. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/45362/


Hong Kong University of Science and Technology

5. Li, Qiang. Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD.

Degree: 2014, Hong Kong University of Science and Technology

 After more than 40 years’ transistor scaling, Si CMOS technology has enabled state-of-the-art microprocessors with large-volume, low-cost production and high-level integration. Meanwhile, InP based transistor… (more)

Subjects/Keywords: Indium phosphide; Inhomogeneous materials; Metal organic chemical vapor deposition; Metal oxide semiconductor field-effect transistors

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APA (6th Edition):

Li, Q. (2014). Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1301489 ; http://repository.ust.hk/ir/bitstream/1783.1-92029/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Qiang. “Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD.” 2014. Thesis, Hong Kong University of Science and Technology. Accessed October 16, 2019. https://doi.org/10.14711/thesis-b1301489 ; http://repository.ust.hk/ir/bitstream/1783.1-92029/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Qiang. “Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD.” 2014. Web. 16 Oct 2019.

Vancouver:

Li Q. Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2014. [cited 2019 Oct 16]. Available from: https://doi.org/10.14711/thesis-b1301489 ; http://repository.ust.hk/ir/bitstream/1783.1-92029/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li Q. Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD. [Thesis]. Hong Kong University of Science and Technology; 2014. Available from: https://doi.org/10.14711/thesis-b1301489 ; http://repository.ust.hk/ir/bitstream/1783.1-92029/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Anna University

6. Ganesh V. Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals.

Degree: Physics, 2013, Anna University

Semiconductors such as group III-nitrides are playing important role in optoelectronic devices especially blue-green light emitting diodes (LED s), short wavelength laser diodes (LD s)… (more)

Subjects/Keywords: Semiconductor; Physics; Light emitting diodes; Laser diodes; Metal-organic chemical vapor deposition

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APA (6th Edition):

V, G. (2013). Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/9921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

V, Ganesh. “Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals.” 2013. Thesis, Anna University. Accessed October 16, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/9921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

V, Ganesh. “Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals.” 2013. Web. 16 Oct 2019.

Vancouver:

V G. Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals. [Internet] [Thesis]. Anna University; 2013. [cited 2019 Oct 16]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/9921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

V G. Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals. [Thesis]. Anna University; 2013. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/9921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

7. Zhong, Zhenyu. MOCVD grown InP and related thin films on silicon substrates for electron and photonic devices applications.

Degree: 2010, Hong Kong University of Science and Technology

 Heterogeneous integration of III-V compound semiconductor with silicon is attracting renewed attention in recent years due to its potential in electronic and photonic applications. For… (more)

Subjects/Keywords: Indium phosphide; Optoelectronic devices; Thin film devices; Inhomogeneous materials; Metal organic chemical vapor deposition

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APA (6th Edition):

Zhong, Z. (2010). MOCVD grown InP and related thin films on silicon substrates for electron and photonic devices applications. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1129744 ; http://repository.ust.hk/ir/bitstream/1783.1-7076/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhong, Zhenyu. “MOCVD grown InP and related thin films on silicon substrates for electron and photonic devices applications.” 2010. Thesis, Hong Kong University of Science and Technology. Accessed October 16, 2019. https://doi.org/10.14711/thesis-b1129744 ; http://repository.ust.hk/ir/bitstream/1783.1-7076/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhong, Zhenyu. “MOCVD grown InP and related thin films on silicon substrates for electron and photonic devices applications.” 2010. Web. 16 Oct 2019.

Vancouver:

Zhong Z. MOCVD grown InP and related thin films on silicon substrates for electron and photonic devices applications. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2010. [cited 2019 Oct 16]. Available from: https://doi.org/10.14711/thesis-b1129744 ; http://repository.ust.hk/ir/bitstream/1783.1-7076/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhong Z. MOCVD grown InP and related thin films on silicon substrates for electron and photonic devices applications. [Thesis]. Hong Kong University of Science and Technology; 2010. Available from: https://doi.org/10.14711/thesis-b1129744 ; http://repository.ust.hk/ir/bitstream/1783.1-7076/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

8. Ma, Jun ECE. Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs.

Degree: 2014, Hong Kong University of Science and Technology

 III-nitrides are one of the most important semiconductors since silicon, offering high-carrier saturation velocity, high breakdown field strength and hence enormous opportunities in RF/power electronics.… (more)

Subjects/Keywords: Gallium nitride; Metal organic chemical vapor deposition; Modulation-doped field-effect transistors; Light emitting diodes

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APA (6th Edition):

Ma, J. E. (2014). Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1274328 ; http://repository.ust.hk/ir/bitstream/1783.1-92613/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ma, Jun ECE. “Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs.” 2014. Thesis, Hong Kong University of Science and Technology. Accessed October 16, 2019. https://doi.org/10.14711/thesis-b1274328 ; http://repository.ust.hk/ir/bitstream/1783.1-92613/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ma, Jun ECE. “Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs.” 2014. Web. 16 Oct 2019.

Vancouver:

Ma JE. Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2014. [cited 2019 Oct 16]. Available from: https://doi.org/10.14711/thesis-b1274328 ; http://repository.ust.hk/ir/bitstream/1783.1-92613/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ma JE. Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs. [Thesis]. Hong Kong University of Science and Technology; 2014. Available from: https://doi.org/10.14711/thesis-b1274328 ; http://repository.ust.hk/ir/bitstream/1783.1-92613/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

9. Lai, Kun-Yu Alvin. InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

 Nonpolar (m-plane or a-plane) gallium nitride (GaN) is predicted to be a potential substrate material to improve luminous efficiencies of nitride-based quantum wells (QWs). Numerical… (more)

Subjects/Keywords: GaN; InGaN; quantum well; metal-organic chemical vapor deposition; quantum dot; light emitting diode

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APA (6th Edition):

Lai, K. A. (2009). InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5610

Chicago Manual of Style (16th Edition):

Lai, Kun-Yu Alvin. “InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates.” 2009. Doctoral Dissertation, North Carolina State University. Accessed October 16, 2019. http://www.lib.ncsu.edu/resolver/1840.16/5610.

MLA Handbook (7th Edition):

Lai, Kun-Yu Alvin. “InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates.” 2009. Web. 16 Oct 2019.

Vancouver:

Lai KA. InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2019 Oct 16]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5610.

Council of Science Editors:

Lai KA. InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5610


Bowling Green State University

10. Saadatkia, Pooneh. Optoelectronic Properties of Wide Band Gap Semiconductors.

Degree: PhD, Photochemical Sciences, 2019, Bowling Green State University

 Wide band gap oxide semiconductors exhibit a wide range of interesting electronic and optical properties that have been used in optoelectronic devices. Native defects play… (more)

Subjects/Keywords: Physics; Chemistry; SrTiO3; Photoconductivity; Luminescence; Defects; Ga2O3; Metal organic chemical vapor deposition; Positron annihilation spectroscopy

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APA (6th Edition):

Saadatkia, P. (2019). Optoelectronic Properties of Wide Band Gap Semiconductors. (Doctoral Dissertation). Bowling Green State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1562379152593304

Chicago Manual of Style (16th Edition):

Saadatkia, Pooneh. “Optoelectronic Properties of Wide Band Gap Semiconductors.” 2019. Doctoral Dissertation, Bowling Green State University. Accessed October 16, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1562379152593304.

MLA Handbook (7th Edition):

Saadatkia, Pooneh. “Optoelectronic Properties of Wide Band Gap Semiconductors.” 2019. Web. 16 Oct 2019.

Vancouver:

Saadatkia P. Optoelectronic Properties of Wide Band Gap Semiconductors. [Internet] [Doctoral dissertation]. Bowling Green State University; 2019. [cited 2019 Oct 16]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1562379152593304.

Council of Science Editors:

Saadatkia P. Optoelectronic Properties of Wide Band Gap Semiconductors. [Doctoral Dissertation]. Bowling Green State University; 2019. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1562379152593304


Texas State University – San Marcos

11. Anderson, Jonathan W. Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure.

Degree: MS, Physics, 2014, Texas State University – San Marcos

 The group III-nitride family of semiconductor materials grown by metalorganic chemical vapor deposition (MOCVD) has had a dramatic impact on optoelectronics and high-frequency, high-power devices… (more)

Subjects/Keywords: MOCVD; AlGaInN; III-nitride; STEM; Metal organic chemical vapor deposition; Optoelectronics; Microtechnology

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APA (6th Edition):

Anderson, J. W. (2014). Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure. (Masters Thesis). Texas State University – San Marcos. Retrieved from https://digital.library.txstate.edu/handle/10877/5254

Chicago Manual of Style (16th Edition):

Anderson, Jonathan W. “Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure.” 2014. Masters Thesis, Texas State University – San Marcos. Accessed October 16, 2019. https://digital.library.txstate.edu/handle/10877/5254.

MLA Handbook (7th Edition):

Anderson, Jonathan W. “Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure.” 2014. Web. 16 Oct 2019.

Vancouver:

Anderson JW. Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure. [Internet] [Masters thesis]. Texas State University – San Marcos; 2014. [cited 2019 Oct 16]. Available from: https://digital.library.txstate.edu/handle/10877/5254.

Council of Science Editors:

Anderson JW. Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure. [Masters Thesis]. Texas State University – San Marcos; 2014. Available from: https://digital.library.txstate.edu/handle/10877/5254


University of Manchester

12. Ramasamy, Karthik. New Molecular Precursors for Metal Sulfides.

Degree: 2010, University of Manchester

Metal sulfide thin films are important class of materials which have applications in photovoltaics, microelectronics and displays. Chemical vapour deposition (CVD) is well known method… (more)

Subjects/Keywords: Metal Sulfide,; Chemical Vapor Deposition; Precursors Development

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APA (6th Edition):

Ramasamy, K. (2010). New Molecular Precursors for Metal Sulfides. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:99213

Chicago Manual of Style (16th Edition):

Ramasamy, Karthik. “New Molecular Precursors for Metal Sulfides.” 2010. Doctoral Dissertation, University of Manchester. Accessed October 16, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:99213.

MLA Handbook (7th Edition):

Ramasamy, Karthik. “New Molecular Precursors for Metal Sulfides.” 2010. Web. 16 Oct 2019.

Vancouver:

Ramasamy K. New Molecular Precursors for Metal Sulfides. [Internet] [Doctoral dissertation]. University of Manchester; 2010. [cited 2019 Oct 16]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:99213.

Council of Science Editors:

Ramasamy K. New Molecular Precursors for Metal Sulfides. [Doctoral Dissertation]. University of Manchester; 2010. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:99213


Drexel University

13. Chen, Zizhao. The effect of metal halides on MoS2 growth by chemical vapor deposition.

Degree: 2018, Drexel University

Two-dimensional (2D) materials are materials in which the crystal structure is arranged only along two dimensions. The first 2D material to be fabricated was graphene,… (more)

Subjects/Keywords: Materials science; Metal halides; Chemical vapor deposition

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APA (6th Edition):

Chen, Z. (2018). The effect of metal halides on MoS2 growth by chemical vapor deposition. (Thesis). Drexel University. Retrieved from https://idea.library.drexel.edu/islandora/object/idea%3A8238

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Zizhao. “The effect of metal halides on MoS2 growth by chemical vapor deposition.” 2018. Thesis, Drexel University. Accessed October 16, 2019. https://idea.library.drexel.edu/islandora/object/idea%3A8238.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Zizhao. “The effect of metal halides on MoS2 growth by chemical vapor deposition.” 2018. Web. 16 Oct 2019.

Vancouver:

Chen Z. The effect of metal halides on MoS2 growth by chemical vapor deposition. [Internet] [Thesis]. Drexel University; 2018. [cited 2019 Oct 16]. Available from: https://idea.library.drexel.edu/islandora/object/idea%3A8238.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Z. The effect of metal halides on MoS2 growth by chemical vapor deposition. [Thesis]. Drexel University; 2018. Available from: https://idea.library.drexel.edu/islandora/object/idea%3A8238

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

14. Bassett, Kevin P. Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control.

Degree: MS, 1200, 2010, University of Illinois – Urbana-Champaign

 Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound… (more)

Subjects/Keywords: Metal-organic chemical vapor deposition (MOCVD); Organometallic vapor phase epitaxy (OMVPE); Metalorganic vapour phase epitaxy (MOVPE)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bassett, K. P. (2010). Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/14733

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bassett, Kevin P. “Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control.” 2010. Thesis, University of Illinois – Urbana-Champaign. Accessed October 16, 2019. http://hdl.handle.net/2142/14733.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bassett, Kevin P. “Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control.” 2010. Web. 16 Oct 2019.

Vancouver:

Bassett KP. Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 Oct 16]. Available from: http://hdl.handle.net/2142/14733.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bassett KP. Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control. [Thesis]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/14733

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Washington State University

15. [No author]. Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers .

Degree: 2003, Washington State University

Subjects/Keywords: Plasma-enhanced chemical vapor deposition.; Fuel cells.; Metal organic chemical vapor deposition.

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APA (6th Edition):

author], [. (2003). Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers . (Thesis). Washington State University. Retrieved from http://hdl.handle.net/2376/158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

author], [No. “Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers .” 2003. Thesis, Washington State University. Accessed October 16, 2019. http://hdl.handle.net/2376/158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

author], [No. “Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers .” 2003. Web. 16 Oct 2019.

Vancouver:

author] [. Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers . [Internet] [Thesis]. Washington State University; 2003. [cited 2019 Oct 16]. Available from: http://hdl.handle.net/2376/158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

author] [. Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers . [Thesis]. Washington State University; 2003. Available from: http://hdl.handle.net/2376/158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

16. Pagni, Olivier Demeno. On the mocvd growth of ZnO.

Degree: Faculty of Science, 2004, University of Port Elizabeth

 Zinc oxide (ZnO) is a II-VI semiconductor material that offers tremendous potential as a light emitter in the blue-to-UV range. It has a wurtzite structure,… (more)

Subjects/Keywords: Zinc oxide thin films; Metal organic chemical vapor deposition

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APA (6th Edition):

Pagni, O. D. (2004). On the mocvd growth of ZnO. (Thesis). University of Port Elizabeth. Retrieved from http://hdl.handle.net/10948/382

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pagni, Olivier Demeno. “On the mocvd growth of ZnO.” 2004. Thesis, University of Port Elizabeth. Accessed October 16, 2019. http://hdl.handle.net/10948/382.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pagni, Olivier Demeno. “On the mocvd growth of ZnO.” 2004. Web. 16 Oct 2019.

Vancouver:

Pagni OD. On the mocvd growth of ZnO. [Internet] [Thesis]. University of Port Elizabeth; 2004. [cited 2019 Oct 16]. Available from: http://hdl.handle.net/10948/382.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pagni OD. On the mocvd growth of ZnO. [Thesis]. University of Port Elizabeth; 2004. Available from: http://hdl.handle.net/10948/382

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Nelson Mandela Metropolitan University

17. Miya, Senzo Simo. Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices.

Degree: PhD, Faculty of Science, 2013, Nelson Mandela Metropolitan University

 The importance of infrared (IR) technology (for detection in the 3-5 μm and 8-14 μm atmospheric windows) has spread from military applications to civilian applications… (more)

Subjects/Keywords: Gallium arsenide semiconductors; Organometallic compounds; Compound semiconductors; Metal organic chemical vapor deposition; Superlattices as materials; Epitaxy

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APA (6th Edition):

Miya, S. S. (2013). Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices. (Doctoral Dissertation). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/d1020866

Chicago Manual of Style (16th Edition):

Miya, Senzo Simo. “Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices.” 2013. Doctoral Dissertation, Nelson Mandela Metropolitan University. Accessed October 16, 2019. http://hdl.handle.net/10948/d1020866.

MLA Handbook (7th Edition):

Miya, Senzo Simo. “Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices.” 2013. Web. 16 Oct 2019.

Vancouver:

Miya SS. Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices. [Internet] [Doctoral dissertation]. Nelson Mandela Metropolitan University; 2013. [cited 2019 Oct 16]. Available from: http://hdl.handle.net/10948/d1020866.

Council of Science Editors:

Miya SS. Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices. [Doctoral Dissertation]. Nelson Mandela Metropolitan University; 2013. Available from: http://hdl.handle.net/10948/d1020866

18. Norris, Kate Jeanne. Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices.

Degree: Electrical Engineering, 2015, University of California – Santa Cruz

 In the 74 years since diode rectifier based radar technology helped the allied forces win WWII, semiconductors have transformed the world we live in. From… (more)

Subjects/Keywords: Materials Science; Electrical engineering; Metal Organic Chemical Vapor Deposition; Resistive switching devices; Thermoelectric devices; Transmission Electron Microscopy

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APA (6th Edition):

Norris, K. J. (2015). Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices. (Thesis). University of California – Santa Cruz. Retrieved from http://www.escholarship.org/uc/item/3b20674g

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Norris, Kate Jeanne. “Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices.” 2015. Thesis, University of California – Santa Cruz. Accessed October 16, 2019. http://www.escholarship.org/uc/item/3b20674g.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Norris, Kate Jeanne. “Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices.” 2015. Web. 16 Oct 2019.

Vancouver:

Norris KJ. Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices. [Internet] [Thesis]. University of California – Santa Cruz; 2015. [cited 2019 Oct 16]. Available from: http://www.escholarship.org/uc/item/3b20674g.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Norris KJ. Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices. [Thesis]. University of California – Santa Cruz; 2015. Available from: http://www.escholarship.org/uc/item/3b20674g

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rutgers University

19. Zhang, Jingming. Design and synthesis of metal organic frameworks for CO₂ separation and catalysis.

Degree: Chemistry and Chemical Biology, 2013, Rutgers University

Subjects/Keywords: Carbon dioxide mitigation; Metal organic chemical vapor deposition

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APA (6th Edition):

Zhang, J. (2013). Design and synthesis of metal organic frameworks for CO₂ separation and catalysis. (Thesis). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/42094/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Jingming. “Design and synthesis of metal organic frameworks for CO₂ separation and catalysis.” 2013. Thesis, Rutgers University. Accessed October 16, 2019. https://rucore.libraries.rutgers.edu/rutgers-lib/42094/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Jingming. “Design and synthesis of metal organic frameworks for CO₂ separation and catalysis.” 2013. Web. 16 Oct 2019.

Vancouver:

Zhang J. Design and synthesis of metal organic frameworks for CO₂ separation and catalysis. [Internet] [Thesis]. Rutgers University; 2013. [cited 2019 Oct 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/42094/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang J. Design and synthesis of metal organic frameworks for CO₂ separation and catalysis. [Thesis]. Rutgers University; 2013. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/42094/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Harvard University

20. Tong, Liuchuan. Development of Organic Molecules for Aqueous Redox Flow Battery.

Degree: PhD, 2018, Harvard University

The cost of renewable energy sources such as solar and wind has dropped significantly such that the main barrier for a wider adoption is intermittency.… (more)

Subjects/Keywords: Flow Battery; Organic molecules; Chemical Vapor Deposition; Organic Redox Flow Battery

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APA (6th Edition):

Tong, L. (2018). Development of Organic Molecules for Aqueous Redox Flow Battery. (Doctoral Dissertation). Harvard University. Retrieved from http://nrs.harvard.edu/urn-3:HUL.InstRepos:41127182

Chicago Manual of Style (16th Edition):

Tong, Liuchuan. “Development of Organic Molecules for Aqueous Redox Flow Battery.” 2018. Doctoral Dissertation, Harvard University. Accessed October 16, 2019. http://nrs.harvard.edu/urn-3:HUL.InstRepos:41127182.

MLA Handbook (7th Edition):

Tong, Liuchuan. “Development of Organic Molecules for Aqueous Redox Flow Battery.” 2018. Web. 16 Oct 2019.

Vancouver:

Tong L. Development of Organic Molecules for Aqueous Redox Flow Battery. [Internet] [Doctoral dissertation]. Harvard University; 2018. [cited 2019 Oct 16]. Available from: http://nrs.harvard.edu/urn-3:HUL.InstRepos:41127182.

Council of Science Editors:

Tong L. Development of Organic Molecules for Aqueous Redox Flow Battery. [Doctoral Dissertation]. Harvard University; 2018. Available from: http://nrs.harvard.edu/urn-3:HUL.InstRepos:41127182


University of Manchester

21. Ramasamy, Karthik. New molecular precursors for metal sulfides.

Degree: PhD, 2010, University of Manchester

Metal sulfide thin films are important class of materials which have applications in photovoltaics, microelectronics and displays. Chemical vapour deposition (CVD) is well known method… (more)

Subjects/Keywords: 546.3; Metal Sulfide; Chemical Vapor Deposition; Precursors Development

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APA (6th Edition):

Ramasamy, K. (2010). New molecular precursors for metal sulfides. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/new-molecular-precursors-for-metal-sulfides(49bcd8c0-4a37-4eb1-892e-7a7973f8f3cd).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.528132

Chicago Manual of Style (16th Edition):

Ramasamy, Karthik. “New molecular precursors for metal sulfides.” 2010. Doctoral Dissertation, University of Manchester. Accessed October 16, 2019. https://www.research.manchester.ac.uk/portal/en/theses/new-molecular-precursors-for-metal-sulfides(49bcd8c0-4a37-4eb1-892e-7a7973f8f3cd).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.528132.

MLA Handbook (7th Edition):

Ramasamy, Karthik. “New molecular precursors for metal sulfides.” 2010. Web. 16 Oct 2019.

Vancouver:

Ramasamy K. New molecular precursors for metal sulfides. [Internet] [Doctoral dissertation]. University of Manchester; 2010. [cited 2019 Oct 16]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/new-molecular-precursors-for-metal-sulfides(49bcd8c0-4a37-4eb1-892e-7a7973f8f3cd).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.528132.

Council of Science Editors:

Ramasamy K. New molecular precursors for metal sulfides. [Doctoral Dissertation]. University of Manchester; 2010. Available from: https://www.research.manchester.ac.uk/portal/en/theses/new-molecular-precursors-for-metal-sulfides(49bcd8c0-4a37-4eb1-892e-7a7973f8f3cd).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.528132


University of Texas – Austin

22. Liao, Wen. Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition.

Degree: PhD, Chemical engineering, 2016, University of Texas – Austin

 As feature sizes in microelectronic devices decrease, ultra-thin (< 3 nm) and smooth diffusion barriers are required to prevent copper from diffusing into the surrounding… (more)

Subjects/Keywords: Chemical vapor deposition; Ruthenium; Nucleation; Ultra-thin metal film

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APA (6th Edition):

Liao, W. (2016). Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/39740

Chicago Manual of Style (16th Edition):

Liao, Wen. “Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition.” 2016. Doctoral Dissertation, University of Texas – Austin. Accessed October 16, 2019. http://hdl.handle.net/2152/39740.

MLA Handbook (7th Edition):

Liao, Wen. “Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition.” 2016. Web. 16 Oct 2019.

Vancouver:

Liao W. Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2016. [cited 2019 Oct 16]. Available from: http://hdl.handle.net/2152/39740.

Council of Science Editors:

Liao W. Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition. [Doctoral Dissertation]. University of Texas – Austin; 2016. Available from: http://hdl.handle.net/2152/39740


NSYSU

23. Weng, Tzu-Yu. Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes.

Degree: Master, Chemistry, 2003, NSYSU

Metal diketonato complexes are populate in recent ten years, because of diketone compound is easy to get and cheap and also have good volatility to… (more)

Subjects/Keywords: Metal diketonato complexes; Cis/Trans Geometry; Metal Organic Chemical Vapor Deposition; MOCVD

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APA (6th Edition):

Weng, T. (2003). Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0903103-180919

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Weng, Tzu-Yu. “Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes.” 2003. Thesis, NSYSU. Accessed October 16, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0903103-180919.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Weng, Tzu-Yu. “Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes.” 2003. Web. 16 Oct 2019.

Vancouver:

Weng T. Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes. [Internet] [Thesis]. NSYSU; 2003. [cited 2019 Oct 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0903103-180919.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Weng T. Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes. [Thesis]. NSYSU; 2003. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0903103-180919

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

24. Yaddanapudi, G R Krishna. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.

Degree: 2016, Indian Institute of Science

 Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting materials after Si and GaAs. The excellent optical and… (more)

Subjects/Keywords: Semiconductors; Nitrides; Gallium Nitride; N-Polar Gallium Nitride; Metal Organic Chemical Vapor Deposition (MOCVD); Galllium Nitride Growth; High Temperature Gallium Nitride; Low Temperature Gallium Nitride; GaN; Materials Engineering

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APA (6th Edition):

Yaddanapudi, G. R. K. (2016). Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/handle/2005/2662 ; http://etd.ncsi.iisc.ernet.in/abstracts/3477/G27144-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2016. Thesis, Indian Institute of Science. Accessed October 16, 2019. http://etd.iisc.ernet.in/handle/2005/2662 ; http://etd.ncsi.iisc.ernet.in/abstracts/3477/G27144-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2016. Web. 16 Oct 2019.

Vancouver:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Internet] [Thesis]. Indian Institute of Science; 2016. [cited 2019 Oct 16]. Available from: http://etd.iisc.ernet.in/handle/2005/2662 ; http://etd.ncsi.iisc.ernet.in/abstracts/3477/G27144-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Thesis]. Indian Institute of Science; 2016. Available from: http://etd.iisc.ernet.in/handle/2005/2662 ; http://etd.ncsi.iisc.ernet.in/abstracts/3477/G27144-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

25. Yaddanapudi, G R Krishna. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.

Degree: 2016, Indian Institute of Science

 Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting materials after Si and GaAs. The excellent optical and… (more)

Subjects/Keywords: Semiconductors; Nitrides; Gallium Nitride; N-Polar Gallium Nitride; Metal Organic Chemical Vapor Deposition (MOCVD); Galllium Nitride Growth; High Temperature Gallium Nitride; Low Temperature Gallium Nitride; GaN; Materials Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yaddanapudi, G. R. K. (2016). Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2662

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2016. Thesis, Indian Institute of Science. Accessed October 16, 2019. http://hdl.handle.net/2005/2662.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2016. Web. 16 Oct 2019.

Vancouver:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Internet] [Thesis]. Indian Institute of Science; 2016. [cited 2019 Oct 16]. Available from: http://hdl.handle.net/2005/2662.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Thesis]. Indian Institute of Science; 2016. Available from: http://hdl.handle.net/2005/2662

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Nelson Mandela Metropolitan University

26. Vankova, Viera. Metalorganic vapour phase epitaxial growth and characterisation of Sb-based semiconductors.

Degree: Faculty of Science, 2005, Nelson Mandela Metropolitan University

 This study focuses on the growth and characterization of epitaxial InAs and InAs1-xSbx. Layers are grown on InAs, GaAs and GaSb substrates by metalorganic vapour… (more)

Subjects/Keywords: Compound semiconductors; Epitaxy; Organometallic compounds; Metal organic chemical vapor deposition

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Vankova, V. (2005). Metalorganic vapour phase epitaxial growth and characterisation of Sb-based semiconductors. (Thesis). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/d1019678

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Vankova, Viera. “Metalorganic vapour phase epitaxial growth and characterisation of Sb-based semiconductors.” 2005. Thesis, Nelson Mandela Metropolitan University. Accessed October 16, 2019. http://hdl.handle.net/10948/d1019678.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Vankova, Viera. “Metalorganic vapour phase epitaxial growth and characterisation of Sb-based semiconductors.” 2005. Web. 16 Oct 2019.

Vancouver:

Vankova V. Metalorganic vapour phase epitaxial growth and characterisation of Sb-based semiconductors. [Internet] [Thesis]. Nelson Mandela Metropolitan University; 2005. [cited 2019 Oct 16]. Available from: http://hdl.handle.net/10948/d1019678.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vankova V. Metalorganic vapour phase epitaxial growth and characterisation of Sb-based semiconductors. [Thesis]. Nelson Mandela Metropolitan University; 2005. Available from: http://hdl.handle.net/10948/d1019678

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

27. Acord, Jeremy Daniel. IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE.

Degree: PhD, Materials Science and Engineering, 2007, Penn State University

 Al(x)Ga(1-x)N is a wide band gap compound semiconductor material with the desirable properties of high chemical and thermal stability, as well as a direct band… (more)

Subjects/Keywords: METAL ORGANIC CHEMICAL VAPOR DEPOSITION; III-V NITRIDES; STRESS MEASUREMENT; EPITAXY

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APA (6th Edition):

Acord, J. D. (2007). IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/7830

Chicago Manual of Style (16th Edition):

Acord, Jeremy Daniel. “IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE.” 2007. Doctoral Dissertation, Penn State University. Accessed October 16, 2019. https://etda.libraries.psu.edu/catalog/7830.

MLA Handbook (7th Edition):

Acord, Jeremy Daniel. “IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE.” 2007. Web. 16 Oct 2019.

Vancouver:

Acord JD. IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE. [Internet] [Doctoral dissertation]. Penn State University; 2007. [cited 2019 Oct 16]. Available from: https://etda.libraries.psu.edu/catalog/7830.

Council of Science Editors:

Acord JD. IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE. [Doctoral Dissertation]. Penn State University; 2007. Available from: https://etda.libraries.psu.edu/catalog/7830


University of Southern California

28. Deng, Yuanming. Gallium arsenide based semiconductor laser design and growth by metal-organic chemical vapor deposition.

Degree: PhD, Electrical Engineering, 2006, University of Southern California

 This dissertation presents research projects with the common theme: novel GaAs based device structures grown by metal organic chemical vapor deposition (MOCVD).; Vertical-cavity surface-emitting laser… (more)

Subjects/Keywords: Gallium arsenide; metal-organic chemical vapor deposition; semiconductor laser; high efficiency; compliant substrate

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Deng, Y. (2006). Gallium arsenide based semiconductor laser design and growth by metal-organic chemical vapor deposition. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/4368/rec/2951

Chicago Manual of Style (16th Edition):

Deng, Yuanming. “Gallium arsenide based semiconductor laser design and growth by metal-organic chemical vapor deposition.” 2006. Doctoral Dissertation, University of Southern California. Accessed October 16, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/4368/rec/2951.

MLA Handbook (7th Edition):

Deng, Yuanming. “Gallium arsenide based semiconductor laser design and growth by metal-organic chemical vapor deposition.” 2006. Web. 16 Oct 2019.

Vancouver:

Deng Y. Gallium arsenide based semiconductor laser design and growth by metal-organic chemical vapor deposition. [Internet] [Doctoral dissertation]. University of Southern California; 2006. [cited 2019 Oct 16]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/4368/rec/2951.

Council of Science Editors:

Deng Y. Gallium arsenide based semiconductor laser design and growth by metal-organic chemical vapor deposition. [Doctoral Dissertation]. University of Southern California; 2006. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/4368/rec/2951


Kansas State University

29. Al Tahtamouni, Talal Mohammed Ahmad. MOCVD growth and characterization of al-rich ALN/ALGAN epilayers and quantum wells.

Degree: PhD, Department of Physics, 2007, Kansas State University

 The correlation between polarity and material quality of un-doped Al[0.81subscript]Ga[0.19subscript]N was studied. The overall material quality is significantly influenced by the growth polarity. The epilayers… (more)

Subjects/Keywords: Nitrides growth; Metal organic chemical vapor deposition; Physics, Condensed Matter (0611)

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APA (6th Edition):

Al Tahtamouni, T. M. A. (2007). MOCVD growth and characterization of al-rich ALN/ALGAN epilayers and quantum wells. (Doctoral Dissertation). Kansas State University. Retrieved from http://hdl.handle.net/2097/431

Chicago Manual of Style (16th Edition):

Al Tahtamouni, Talal Mohammed Ahmad. “MOCVD growth and characterization of al-rich ALN/ALGAN epilayers and quantum wells.” 2007. Doctoral Dissertation, Kansas State University. Accessed October 16, 2019. http://hdl.handle.net/2097/431.

MLA Handbook (7th Edition):

Al Tahtamouni, Talal Mohammed Ahmad. “MOCVD growth and characterization of al-rich ALN/ALGAN epilayers and quantum wells.” 2007. Web. 16 Oct 2019.

Vancouver:

Al Tahtamouni TMA. MOCVD growth and characterization of al-rich ALN/ALGAN epilayers and quantum wells. [Internet] [Doctoral dissertation]. Kansas State University; 2007. [cited 2019 Oct 16]. Available from: http://hdl.handle.net/2097/431.

Council of Science Editors:

Al Tahtamouni TMA. MOCVD growth and characterization of al-rich ALN/ALGAN epilayers and quantum wells. [Doctoral Dissertation]. Kansas State University; 2007. Available from: http://hdl.handle.net/2097/431

30. Li, Haoran. New aspect in MOCVD of metal- and N-polar (Al,Ga)N and its device applications.

Degree: 2018, University of California – eScholarship, University of California

 (Al,Ga,In)N semiconductor materials are widely used in high-frequency, high-power electronics due to their wide bandgaps. Both metal- and N-polar AlGaN/GaN high-electron-mobility transistors (HEMTs) demonstrated excellent… (more)

Subjects/Keywords: Electrical engineering; Materials Science; Electronic device; high-electron-mobility transistors; high-frequency transistor; high-power transistor; III-Nitride; metal-organic chemical vapor deposition

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, H. (2018). New aspect in MOCVD of metal- and N-polar (Al,Ga)N and its device applications. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/4zh1r44d

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Haoran. “New aspect in MOCVD of metal- and N-polar (Al,Ga)N and its device applications.” 2018. Thesis, University of California – eScholarship, University of California. Accessed October 16, 2019. http://www.escholarship.org/uc/item/4zh1r44d.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Haoran. “New aspect in MOCVD of metal- and N-polar (Al,Ga)N and its device applications.” 2018. Web. 16 Oct 2019.

Vancouver:

Li H. New aspect in MOCVD of metal- and N-polar (Al,Ga)N and its device applications. [Internet] [Thesis]. University of California – eScholarship, University of California; 2018. [cited 2019 Oct 16]. Available from: http://www.escholarship.org/uc/item/4zh1r44d.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li H. New aspect in MOCVD of metal- and N-polar (Al,Ga)N and its device applications. [Thesis]. University of California – eScholarship, University of California; 2018. Available from: http://www.escholarship.org/uc/item/4zh1r44d

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2] [3] [4] [5] … [1961]

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