Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for subject:(large signal model). Showing records 1 – 16 of 16 total matches.

Search Limiters

Last 2 Years | English Only

No search limiters apply to these results.

▼ Search Limiters


Virginia Tech

1. Ahmed, Sara Mohamed. Modeling of Power Electronics Distribution Systems with Low-frequency, Large-signal (LFLS) Models.

Degree: PhD, Electrical and Computer Engineering, 2011, Virginia Tech

 This work presents a modeling methodology that uses new types of models called low-frequency, large-signal models in a circuit simulator (Saber) to model a complex… (more)

Subjects/Keywords: Low frequency large signal models; impedance; small-signal model; Modeling; average models

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ahmed, S. M. (2011). Modeling of Power Electronics Distribution Systems with Low-frequency, Large-signal (LFLS) Models. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/27787

Chicago Manual of Style (16th Edition):

Ahmed, Sara Mohamed. “Modeling of Power Electronics Distribution Systems with Low-frequency, Large-signal (LFLS) Models.” 2011. Doctoral Dissertation, Virginia Tech. Accessed October 15, 2019. http://hdl.handle.net/10919/27787.

MLA Handbook (7th Edition):

Ahmed, Sara Mohamed. “Modeling of Power Electronics Distribution Systems with Low-frequency, Large-signal (LFLS) Models.” 2011. Web. 15 Oct 2019.

Vancouver:

Ahmed SM. Modeling of Power Electronics Distribution Systems with Low-frequency, Large-signal (LFLS) Models. [Internet] [Doctoral dissertation]. Virginia Tech; 2011. [cited 2019 Oct 15]. Available from: http://hdl.handle.net/10919/27787.

Council of Science Editors:

Ahmed SM. Modeling of Power Electronics Distribution Systems with Low-frequency, Large-signal (LFLS) Models. [Doctoral Dissertation]. Virginia Tech; 2011. Available from: http://hdl.handle.net/10919/27787


NSYSU

2. Yang, Bo-Siang. Large Signal Model Establishment of Metal-oxide Semiconductor Field-effect Transistors.

Degree: Master, Electrical Engineering, 2013, NSYSU

 The reduction of intermodulation distortion (IMD) due to inductive behavior for the radio frequency (RF) metal-oxide-semiconductor field-effect transistors (MOSFETs) is explored using Volterra series based… (more)

Subjects/Keywords: large signal model; Volterra series; nonlinearity; breakdown; MOSFET

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yang, B. (2013). Large Signal Model Establishment of Metal-oxide Semiconductor Field-effect Transistors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812113-141426

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Bo-Siang. “Large Signal Model Establishment of Metal-oxide Semiconductor Field-effect Transistors.” 2013. Thesis, NSYSU. Accessed October 15, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812113-141426.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Bo-Siang. “Large Signal Model Establishment of Metal-oxide Semiconductor Field-effect Transistors.” 2013. Web. 15 Oct 2019.

Vancouver:

Yang B. Large Signal Model Establishment of Metal-oxide Semiconductor Field-effect Transistors. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Oct 15]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812113-141426.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang B. Large Signal Model Establishment of Metal-oxide Semiconductor Field-effect Transistors. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812113-141426

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

3. Yin, Hong. A Physics-based Large-signal Analytical Model for AlGaN/GaN HFETs.

Degree: PhD, Electrical Engineering, 2008, North Carolina State University

Subjects/Keywords: model GaN HFET large-signal

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yin, H. (2008). A Physics-based Large-signal Analytical Model for AlGaN/GaN HFETs. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4578

Chicago Manual of Style (16th Edition):

Yin, Hong. “A Physics-based Large-signal Analytical Model for AlGaN/GaN HFETs.” 2008. Doctoral Dissertation, North Carolina State University. Accessed October 15, 2019. http://www.lib.ncsu.edu/resolver/1840.16/4578.

MLA Handbook (7th Edition):

Yin, Hong. “A Physics-based Large-signal Analytical Model for AlGaN/GaN HFETs.” 2008. Web. 15 Oct 2019.

Vancouver:

Yin H. A Physics-based Large-signal Analytical Model for AlGaN/GaN HFETs. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2019 Oct 15]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4578.

Council of Science Editors:

Yin H. A Physics-based Large-signal Analytical Model for AlGaN/GaN HFETs. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4578

4. MA JINGYI. Large signal modeling of GaAs MESFET device.

Degree: 2004, National University of Singapore

Subjects/Keywords: GaAs MESFET; Large Signal Model; Small Signal Model

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

JINGYI, M. (2004). Large signal modeling of GaAs MESFET device. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/13653

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

JINGYI, MA. “Large signal modeling of GaAs MESFET device.” 2004. Thesis, National University of Singapore. Accessed October 15, 2019. http://scholarbank.nus.edu.sg/handle/10635/13653.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

JINGYI, MA. “Large signal modeling of GaAs MESFET device.” 2004. Web. 15 Oct 2019.

Vancouver:

JINGYI M. Large signal modeling of GaAs MESFET device. [Internet] [Thesis]. National University of Singapore; 2004. [cited 2019 Oct 15]. Available from: http://scholarbank.nus.edu.sg/handle/10635/13653.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

JINGYI M. Large signal modeling of GaAs MESFET device. [Thesis]. National University of Singapore; 2004. Available from: http://scholarbank.nus.edu.sg/handle/10635/13653

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

5. CHEN, JIN-HUI. Large Signal Model Establishment for different gate length Mental-Oxide Semiconductor Field-Effect Transistor and its Characterization.

Degree: Master, Communications Engineering, 2013, NSYSU

 Due to the fast development of the microwave circuits, the circuit design relies on good and accurate model. The research focused on the nonlinear characteristics… (more)

Subjects/Keywords: Breakdown region; Metal-Oxide Semiconductor Field-Effect Transistor; Large signal model; Gate length; Nonlinear characteristics

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

CHEN, J. (2013). Large Signal Model Establishment for different gate length Mental-Oxide Semiconductor Field-Effect Transistor and its Characterization. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812113-091801

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

CHEN, JIN-HUI. “Large Signal Model Establishment for different gate length Mental-Oxide Semiconductor Field-Effect Transistor and its Characterization.” 2013. Thesis, NSYSU. Accessed October 15, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812113-091801.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

CHEN, JIN-HUI. “Large Signal Model Establishment for different gate length Mental-Oxide Semiconductor Field-Effect Transistor and its Characterization.” 2013. Web. 15 Oct 2019.

Vancouver:

CHEN J. Large Signal Model Establishment for different gate length Mental-Oxide Semiconductor Field-Effect Transistor and its Characterization. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Oct 15]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812113-091801.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

CHEN J. Large Signal Model Establishment for different gate length Mental-Oxide Semiconductor Field-Effect Transistor and its Characterization. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812113-091801

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

6. Liu, Yueying. Analytical Physics Based AlGaN/GaN HFET Large Signal Model and Nonlinearity Analysis with Nonlinear Source Resistance.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

 In this work the impact of nonlinear source resistance and RF channel breakdown on AlGaN/GaN HFETs RF and linearity performance were studied. AlGaN/GaN HFETs are… (more)

Subjects/Keywords: Nonlinearity; RF Breakdown; AlGaN/GaN; HFET; Large Signal Model; Nonlinear Source Resistance

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Liu, Y. (2009). Analytical Physics Based AlGaN/GaN HFET Large Signal Model and Nonlinearity Analysis with Nonlinear Source Resistance. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3208

Chicago Manual of Style (16th Edition):

Liu, Yueying. “Analytical Physics Based AlGaN/GaN HFET Large Signal Model and Nonlinearity Analysis with Nonlinear Source Resistance.” 2009. Doctoral Dissertation, North Carolina State University. Accessed October 15, 2019. http://www.lib.ncsu.edu/resolver/1840.16/3208.

MLA Handbook (7th Edition):

Liu, Yueying. “Analytical Physics Based AlGaN/GaN HFET Large Signal Model and Nonlinearity Analysis with Nonlinear Source Resistance.” 2009. Web. 15 Oct 2019.

Vancouver:

Liu Y. Analytical Physics Based AlGaN/GaN HFET Large Signal Model and Nonlinearity Analysis with Nonlinear Source Resistance. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2019 Oct 15]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3208.

Council of Science Editors:

Liu Y. Analytical Physics Based AlGaN/GaN HFET Large Signal Model and Nonlinearity Analysis with Nonlinear Source Resistance. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3208


Virginia Tech

7. Khalaf, Yaser A. Systematic Optimization Technique for MESFET Modeling.

Degree: PhD, Electrical and Computer Engineering, 2000, Virginia Tech

 Accurate small and large-signal models of metal-semiconductor field effect transistor (MESFET) devices are essential in all modern microwave and millimeter wave applications. Those models are… (more)

Subjects/Keywords: Optimization; MESFET; semiconductor; Small-Signal model; Large-Signal model; Transistor; Modeling

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Khalaf, Y. A. (2000). Systematic Optimization Technique for MESFET Modeling. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/28515

Chicago Manual of Style (16th Edition):

Khalaf, Yaser A. “Systematic Optimization Technique for MESFET Modeling.” 2000. Doctoral Dissertation, Virginia Tech. Accessed October 15, 2019. http://hdl.handle.net/10919/28515.

MLA Handbook (7th Edition):

Khalaf, Yaser A. “Systematic Optimization Technique for MESFET Modeling.” 2000. Web. 15 Oct 2019.

Vancouver:

Khalaf YA. Systematic Optimization Technique for MESFET Modeling. [Internet] [Doctoral dissertation]. Virginia Tech; 2000. [cited 2019 Oct 15]. Available from: http://hdl.handle.net/10919/28515.

Council of Science Editors:

Khalaf YA. Systematic Optimization Technique for MESFET Modeling. [Doctoral Dissertation]. Virginia Tech; 2000. Available from: http://hdl.handle.net/10919/28515


The Ohio State University

8. Jang, Haedong. NONLINEAR EMBEDDING FOR HIGH EFFICIENCY RF POWER AMPLIFIER DESIGN AND APPLICATION TO GENERALIZED ASYMMETRIC DOHERTY AMPLIFIERS.

Degree: PhD, Electrical and Computer Engineering, 2014, The Ohio State University

 A fully model-based nonlinear embedding device model including low and high-frequency dispersion effects is implemented for the Angelov device model and successfully demonstrated for load… (more)

Subjects/Keywords: Electrical Engineering; De-embedding; Doherty; embedding; harmonic load-pull; large-signal model; load modulation; load synthesis; nonlinear; power amplifier

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jang, H. (2014). NONLINEAR EMBEDDING FOR HIGH EFFICIENCY RF POWER AMPLIFIER DESIGN AND APPLICATION TO GENERALIZED ASYMMETRIC DOHERTY AMPLIFIERS. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1406269587

Chicago Manual of Style (16th Edition):

Jang, Haedong. “NONLINEAR EMBEDDING FOR HIGH EFFICIENCY RF POWER AMPLIFIER DESIGN AND APPLICATION TO GENERALIZED ASYMMETRIC DOHERTY AMPLIFIERS.” 2014. Doctoral Dissertation, The Ohio State University. Accessed October 15, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1406269587.

MLA Handbook (7th Edition):

Jang, Haedong. “NONLINEAR EMBEDDING FOR HIGH EFFICIENCY RF POWER AMPLIFIER DESIGN AND APPLICATION TO GENERALIZED ASYMMETRIC DOHERTY AMPLIFIERS.” 2014. Web. 15 Oct 2019.

Vancouver:

Jang H. NONLINEAR EMBEDDING FOR HIGH EFFICIENCY RF POWER AMPLIFIER DESIGN AND APPLICATION TO GENERALIZED ASYMMETRIC DOHERTY AMPLIFIERS. [Internet] [Doctoral dissertation]. The Ohio State University; 2014. [cited 2019 Oct 15]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1406269587.

Council of Science Editors:

Jang H. NONLINEAR EMBEDDING FOR HIGH EFFICIENCY RF POWER AMPLIFIER DESIGN AND APPLICATION TO GENERALIZED ASYMMETRIC DOHERTY AMPLIFIERS. [Doctoral Dissertation]. The Ohio State University; 2014. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1406269587


University of Arkansas

9. Zhang, Yuzhi. Power Interface Design and System Stability Analysis for 400 V DC-Powered Data Centers.

Degree: PhD, 2017, University of Arkansas

  The demands of high performance cloud computation and internet services have increased in recent decades. These demands have driven the expansion of existing data… (more)

Subjects/Keywords: 400 V DC; Cascaded Totem-pole Bridgeless PFC; Data Centers; Large Signal Model; Model Predictive Control; Ultracapacitor; Electrical and Electronics; Power and Energy

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zhang, Y. (2017). Power Interface Design and System Stability Analysis for 400 V DC-Powered Data Centers. (Doctoral Dissertation). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/2568

Chicago Manual of Style (16th Edition):

Zhang, Yuzhi. “Power Interface Design and System Stability Analysis for 400 V DC-Powered Data Centers.” 2017. Doctoral Dissertation, University of Arkansas. Accessed October 15, 2019. https://scholarworks.uark.edu/etd/2568.

MLA Handbook (7th Edition):

Zhang, Yuzhi. “Power Interface Design and System Stability Analysis for 400 V DC-Powered Data Centers.” 2017. Web. 15 Oct 2019.

Vancouver:

Zhang Y. Power Interface Design and System Stability Analysis for 400 V DC-Powered Data Centers. [Internet] [Doctoral dissertation]. University of Arkansas; 2017. [cited 2019 Oct 15]. Available from: https://scholarworks.uark.edu/etd/2568.

Council of Science Editors:

Zhang Y. Power Interface Design and System Stability Analysis for 400 V DC-Powered Data Centers. [Doctoral Dissertation]. University of Arkansas; 2017. Available from: https://scholarworks.uark.edu/etd/2568

10. ZHOU TIANSHU. HBT characterization and modeling for nonlinear microwave circuit design.

Degree: 2004, National University of Singapore

Subjects/Keywords: heterojunction bipolar transistor (HBT); microwave; radio frequency (RF); small-signal model; large-signal model; integrated circuit.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

TIANSHU, Z. (2004). HBT characterization and modeling for nonlinear microwave circuit design. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/13855

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

TIANSHU, ZHOU. “HBT characterization and modeling for nonlinear microwave circuit design.” 2004. Thesis, National University of Singapore. Accessed October 15, 2019. http://scholarbank.nus.edu.sg/handle/10635/13855.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

TIANSHU, ZHOU. “HBT characterization and modeling for nonlinear microwave circuit design.” 2004. Web. 15 Oct 2019.

Vancouver:

TIANSHU Z. HBT characterization and modeling for nonlinear microwave circuit design. [Internet] [Thesis]. National University of Singapore; 2004. [cited 2019 Oct 15]. Available from: http://scholarbank.nus.edu.sg/handle/10635/13855.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

TIANSHU Z. HBT characterization and modeling for nonlinear microwave circuit design. [Thesis]. National University of Singapore; 2004. Available from: http://scholarbank.nus.edu.sg/handle/10635/13855

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Lorraine

11. Magne, Pierre. Contribution à l'étude de la stabilité et à la stabilisation des réseaux DC à récupération d'énergie : Contribution to the stability analysis and stabilization of DC microgrid with energy storage capability.

Degree: Docteur es, Génie électrique, 2012, Université de Lorraine

Ce mémoire est consacré à l'étude du phénomène d'instabilité pouvant apparaître sur les bus continus des réseaux DC. En effet, l'interaction entre les différents sous-systèmes… (more)

Subjects/Keywords: Réseau DC; Source de stockage électrique; Charge à puissance constante; Stabilité "petit-signal"; Stabilité "grand-signal"; Multimodèles de Takagi-Sugeno; Stabilisation; Fonction de Lyapunov; Système multi-agent; DC network; Energy storage device; Constant power load; "small-signal" stability; "large-signal" stability; Takagi-Sugeno model; Stabilization; Active damping; Lyapunov function; Multi-agent system; 621.31

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Magne, P. (2012). Contribution à l'étude de la stabilité et à la stabilisation des réseaux DC à récupération d'énergie : Contribution to the stability analysis and stabilization of DC microgrid with energy storage capability. (Doctoral Dissertation). Université de Lorraine. Retrieved from http://www.theses.fr/2012LORR0119

Chicago Manual of Style (16th Edition):

Magne, Pierre. “Contribution à l'étude de la stabilité et à la stabilisation des réseaux DC à récupération d'énergie : Contribution to the stability analysis and stabilization of DC microgrid with energy storage capability.” 2012. Doctoral Dissertation, Université de Lorraine. Accessed October 15, 2019. http://www.theses.fr/2012LORR0119.

MLA Handbook (7th Edition):

Magne, Pierre. “Contribution à l'étude de la stabilité et à la stabilisation des réseaux DC à récupération d'énergie : Contribution to the stability analysis and stabilization of DC microgrid with energy storage capability.” 2012. Web. 15 Oct 2019.

Vancouver:

Magne P. Contribution à l'étude de la stabilité et à la stabilisation des réseaux DC à récupération d'énergie : Contribution to the stability analysis and stabilization of DC microgrid with energy storage capability. [Internet] [Doctoral dissertation]. Université de Lorraine; 2012. [cited 2019 Oct 15]. Available from: http://www.theses.fr/2012LORR0119.

Council of Science Editors:

Magne P. Contribution à l'étude de la stabilité et à la stabilisation des réseaux DC à récupération d'énergie : Contribution to the stability analysis and stabilization of DC microgrid with energy storage capability. [Doctoral Dissertation]. Université de Lorraine; 2012. Available from: http://www.theses.fr/2012LORR0119

12. Someswaran, Preethi. Large Signal Modelling of AlGaN/GaN HEMT for Linearity Prediction.

Degree: MS, Electrical and Computer Engineering, 2015, The Ohio State University

 This objective of this work is to develop predictive device modelling methodology to relate the physical behavior of AlGaN/GaN HEMTs with RF power amplifier parameters.… (more)

Subjects/Keywords: Electrical Engineering; GaN HEMT, Large Signal Modelling, Small Signal Model, Power Amplifier

…32 3.3 Large Signal Model used in this work… …26 FIGURE 27: CURTICE LARGE SIGNAL MODEL… …large signal model equivalent to extract the output power, gain and linearity characteristics… …cross-check if the simulated gain characteristics of the device’s large signal model are in… …30 3.2 Existing Large Signal Models… 

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Someswaran, P. (2015). Large Signal Modelling of AlGaN/GaN HEMT for Linearity Prediction. (Masters Thesis). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1440392889

Chicago Manual of Style (16th Edition):

Someswaran, Preethi. “Large Signal Modelling of AlGaN/GaN HEMT for Linearity Prediction.” 2015. Masters Thesis, The Ohio State University. Accessed October 15, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1440392889.

MLA Handbook (7th Edition):

Someswaran, Preethi. “Large Signal Modelling of AlGaN/GaN HEMT for Linearity Prediction.” 2015. Web. 15 Oct 2019.

Vancouver:

Someswaran P. Large Signal Modelling of AlGaN/GaN HEMT for Linearity Prediction. [Internet] [Masters thesis]. The Ohio State University; 2015. [cited 2019 Oct 15]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1440392889.

Council of Science Editors:

Someswaran P. Large Signal Modelling of AlGaN/GaN HEMT for Linearity Prediction. [Masters Thesis]. The Ohio State University; 2015. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1440392889

13. Αμπουντώλας, Κωνσταντίνος. Βέλτιστος έλεγχος φωτεινής σηματοδότησης μέσω τετραγωνικού προγραμματισμού.

Degree: 2009, Technical University of Crete (TUC); Πολυτεχνείο Κρήτης

The thesis investigates the efficiency of a signal control methodology, which offers a computationally feasible technique for real-time network-wide signal control in large-scale urban traffic… (more)

Subjects/Keywords: Έλεγχος φωτεινής σηματοδότησης; Κυκλοφοριακή συμφόρηση; Μοντελοποίηση αποθήκευσης και προώθησης; Έλεγχος κυλιόμενου ορίζοντα (προβλεπτικός); Θεμελιώδες διάγραμμα αστικών δικτύων; Αστικά δίκτυα μεγάλης κλίμακας; Traffic signal control; Traffic congestion; Store and forward modeling; Rolling-horizon (model-predictive) control; Fundamental diagram of urban networks; Large-scale urban road networks

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Αμπουντώλας, . . (2009). Βέλτιστος έλεγχος φωτεινής σηματοδότησης μέσω τετραγωνικού προγραμματισμού. (Thesis). Technical University of Crete (TUC); Πολυτεχνείο Κρήτης. Retrieved from http://hdl.handle.net/10442/hedi/18231

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Αμπουντώλας, Κωνσταντίνος. “Βέλτιστος έλεγχος φωτεινής σηματοδότησης μέσω τετραγωνικού προγραμματισμού.” 2009. Thesis, Technical University of Crete (TUC); Πολυτεχνείο Κρήτης. Accessed October 15, 2019. http://hdl.handle.net/10442/hedi/18231.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Αμπουντώλας, Κωνσταντίνος. “Βέλτιστος έλεγχος φωτεινής σηματοδότησης μέσω τετραγωνικού προγραμματισμού.” 2009. Web. 15 Oct 2019.

Vancouver:

Αμπουντώλας . Βέλτιστος έλεγχος φωτεινής σηματοδότησης μέσω τετραγωνικού προγραμματισμού. [Internet] [Thesis]. Technical University of Crete (TUC); Πολυτεχνείο Κρήτης; 2009. [cited 2019 Oct 15]. Available from: http://hdl.handle.net/10442/hedi/18231.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Αμπουντώλας . Βέλτιστος έλεγχος φωτεινής σηματοδότησης μέσω τετραγωνικού προγραμματισμού. [Thesis]. Technical University of Crete (TUC); Πολυτεχνείο Κρήτης; 2009. Available from: http://hdl.handle.net/10442/hedi/18231

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

14. Mallavarpu, Navin. Large signal model development and high efficiency power amplifier design in cmos technology for millimeter-wave applications.

Degree: PhD, Electrical and Computer Engineering, 2012, Georgia Tech

 This dissertation presents a novel large signal modeling approach which can be used to accurately model CMOS transistors used in millimeter-wave CMOS power amplifiers. The… (more)

Subjects/Keywords: Temperature-dependent model; Millimeter-wave; CMOS; Large signal model; 24 GHz; 60 GHz; Metal oxide semiconductors, Complementary; Millimeter wave devices; Power amplifiers

…NMOS transistor at 60 GHz based on developed large signal model. 60 Figure 4.3: Power and… …PAE contours for an 80µm NMOS transistor at 60 GHz based on developed large signal model… …presents a novel large signal modeling approach which can be used to accurately model CMOS… …transistors used in millimeter-wave CMOS power amplifiers. The large signal model presented in this… …the use of an accurate device model for simulation of small and large signal device and… 

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mallavarpu, N. (2012). Large signal model development and high efficiency power amplifier design in cmos technology for millimeter-wave applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/44711

Chicago Manual of Style (16th Edition):

Mallavarpu, Navin. “Large signal model development and high efficiency power amplifier design in cmos technology for millimeter-wave applications.” 2012. Doctoral Dissertation, Georgia Tech. Accessed October 15, 2019. http://hdl.handle.net/1853/44711.

MLA Handbook (7th Edition):

Mallavarpu, Navin. “Large signal model development and high efficiency power amplifier design in cmos technology for millimeter-wave applications.” 2012. Web. 15 Oct 2019.

Vancouver:

Mallavarpu N. Large signal model development and high efficiency power amplifier design in cmos technology for millimeter-wave applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2012. [cited 2019 Oct 15]. Available from: http://hdl.handle.net/1853/44711.

Council of Science Editors:

Mallavarpu N. Large signal model development and high efficiency power amplifier design in cmos technology for millimeter-wave applications. [Doctoral Dissertation]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/44711


University of South Florida

15. Baylis, Charles Passant, II. Improved Techniques for Nonlinear Electrothermal FET Modeling and Measurement Validation.

Degree: 2007, University of South Florida

 Accurate transistor models are important in wireless and microwave circuit design. Large-signal field-effect transistor (FET) models are generally extracted from current-voltage (IV) characteristics, small-signal S-parameters,… (more)

Subjects/Keywords: microwave; load pull; algorithm; steepest ascent; large-signal; temperature; thermal; trapping; pulsed; static; quiescent; bias; model; thermal resistance; thermal capacitance; GaN; S-parameters; bias tee; infrared; American Studies; Arts and Humanities

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Baylis, Charles Passant, I. (2007). Improved Techniques for Nonlinear Electrothermal FET Modeling and Measurement Validation. (Thesis). University of South Florida. Retrieved from https://scholarcommons.usf.edu/etd/620

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Baylis, Charles Passant, II. “Improved Techniques for Nonlinear Electrothermal FET Modeling and Measurement Validation.” 2007. Thesis, University of South Florida. Accessed October 15, 2019. https://scholarcommons.usf.edu/etd/620.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Baylis, Charles Passant, II. “Improved Techniques for Nonlinear Electrothermal FET Modeling and Measurement Validation.” 2007. Web. 15 Oct 2019.

Vancouver:

Baylis, Charles Passant I. Improved Techniques for Nonlinear Electrothermal FET Modeling and Measurement Validation. [Internet] [Thesis]. University of South Florida; 2007. [cited 2019 Oct 15]. Available from: https://scholarcommons.usf.edu/etd/620.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Baylis, Charles Passant I. Improved Techniques for Nonlinear Electrothermal FET Modeling and Measurement Validation. [Thesis]. University of South Florida; 2007. Available from: https://scholarcommons.usf.edu/etd/620

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

16. Marx, Didier. Contribution à l'étude de la stabilité des systèmes électrotechniques : Contribution to the study of the stability of the electrotechnical systems.

Degree: Docteur es, Génie électrique, 2009, Lorraine INP

Dans cette thèse différents outils issus de l'automatique non linéaire ont été mis en œuvre et ont permis d'apporter une première solution au problème de… (more)

Subjects/Keywords: Fonction de Lyapunov quadratique ou non quadratique; Système non linéaire; Propriété convexe; Globalement asymptotiquement stable; Degré d’appartenance; Fonction d’activation; Règle flou; Ensemble flou; Modèle flou de type Takagi-Sugeno; Point d’équilibre; Bassin d’attraction; Stabilité large signal; Quadratic or no quadratic Lyapunov function; Globally asymptotically stable; Activation function; Nonlinear system; Large signal stability; Attraction domain; Operating point; Takagi-Sugeno fuzzy model; Fuzzy set; Fuzzy rule; Convex property

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Marx, D. (2009). Contribution à l'étude de la stabilité des systèmes électrotechniques : Contribution to the study of the stability of the electrotechnical systems. (Doctoral Dissertation). Lorraine INP. Retrieved from http://www.theses.fr/2009INPL078N

Chicago Manual of Style (16th Edition):

Marx, Didier. “Contribution à l'étude de la stabilité des systèmes électrotechniques : Contribution to the study of the stability of the electrotechnical systems.” 2009. Doctoral Dissertation, Lorraine INP. Accessed October 15, 2019. http://www.theses.fr/2009INPL078N.

MLA Handbook (7th Edition):

Marx, Didier. “Contribution à l'étude de la stabilité des systèmes électrotechniques : Contribution to the study of the stability of the electrotechnical systems.” 2009. Web. 15 Oct 2019.

Vancouver:

Marx D. Contribution à l'étude de la stabilité des systèmes électrotechniques : Contribution to the study of the stability of the electrotechnical systems. [Internet] [Doctoral dissertation]. Lorraine INP; 2009. [cited 2019 Oct 15]. Available from: http://www.theses.fr/2009INPL078N.

Council of Science Editors:

Marx D. Contribution à l'étude de la stabilité des systèmes électrotechniques : Contribution to the study of the stability of the electrotechnical systems. [Doctoral Dissertation]. Lorraine INP; 2009. Available from: http://www.theses.fr/2009INPL078N

.