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You searched for subject:(heterostructure). Showing records 1 – 30 of 111 total matches.

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Rice University

1. Ma, Lulu. CVD Grown Graphene-Based Materials: Synthesis, Characterization and Applications.

Degree: 2015, Rice University

 Graphene draws a lot of attention due to its exceptional electrical, mechanical, thermal, optical and chemical properties. However, its zero bandgap is a limitation for… (more)

Subjects/Keywords: CVD; Graphene; 3D; Heterostructure; Hybrid

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APA (6th Edition):

Ma, L. (2015). CVD Grown Graphene-Based Materials: Synthesis, Characterization and Applications. (Thesis). Rice University. Retrieved from http://hdl.handle.net/1911/87776

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ma, Lulu. “CVD Grown Graphene-Based Materials: Synthesis, Characterization and Applications.” 2015. Thesis, Rice University. Accessed September 25, 2017. http://hdl.handle.net/1911/87776.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ma, Lulu. “CVD Grown Graphene-Based Materials: Synthesis, Characterization and Applications.” 2015. Web. 25 Sep 2017.

Vancouver:

Ma L. CVD Grown Graphene-Based Materials: Synthesis, Characterization and Applications. [Internet] [Thesis]. Rice University; 2015. [cited 2017 Sep 25]. Available from: http://hdl.handle.net/1911/87776.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ma L. CVD Grown Graphene-Based Materials: Synthesis, Characterization and Applications. [Thesis]. Rice University; 2015. Available from: http://hdl.handle.net/1911/87776

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

2. Ze Zhang. Fabrication and Characterization of Heterojunction Backward Diodes Based on the InAs/AlSb/GaSb Material System.

Degree: MSin Electrical Engineering, Electrical Engineering, 2008, University of Notre Dame

Heterostructure backward diodes based on the InAs/AlSb/GaSb material system have been designed, fabricated and characterized. Fabrication processes have been developed based on conventional photolithography,… (more)

Subjects/Keywords: Sb heterostructure; Backward diode; fabrication

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APA (6th Edition):

Zhang, Z. (2008). Fabrication and Characterization of Heterojunction Backward Diodes Based on the InAs/AlSb/GaSb Material System. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/p2676t07f0c

Chicago Manual of Style (16th Edition):

Zhang, Ze. “Fabrication and Characterization of Heterojunction Backward Diodes Based on the InAs/AlSb/GaSb Material System.” 2008. Masters Thesis, University of Notre Dame. Accessed September 25, 2017. https://curate.nd.edu/show/p2676t07f0c.

MLA Handbook (7th Edition):

Zhang, Ze. “Fabrication and Characterization of Heterojunction Backward Diodes Based on the InAs/AlSb/GaSb Material System.” 2008. Web. 25 Sep 2017.

Vancouver:

Zhang Z. Fabrication and Characterization of Heterojunction Backward Diodes Based on the InAs/AlSb/GaSb Material System. [Internet] [Masters thesis]. University of Notre Dame; 2008. [cited 2017 Sep 25]. Available from: https://curate.nd.edu/show/p2676t07f0c.

Council of Science Editors:

Zhang Z. Fabrication and Characterization of Heterojunction Backward Diodes Based on the InAs/AlSb/GaSb Material System. [Masters Thesis]. University of Notre Dame; 2008. Available from: https://curate.nd.edu/show/p2676t07f0c


University of Notre Dame

3. Wenjun Li. InGaAs/InP Modified Uni-Travelling-Carrier Photodiode with a Cliff Layer.

Degree: MSin Electrical Engineering, Electrical Engineering, 2014, University of Notre Dame

  Due to the exceptional transmission property of optical fiber and the development of high-performance optoelectronic components, microwave photonic links have been used in many… (more)

Subjects/Keywords: Microwave; Photodiode; InGaAs/InP heterostructure

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APA (6th Edition):

Li, W. (2014). InGaAs/InP Modified Uni-Travelling-Carrier Photodiode with a Cliff Layer. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/2r36tx33k81

Chicago Manual of Style (16th Edition):

Li, Wenjun. “InGaAs/InP Modified Uni-Travelling-Carrier Photodiode with a Cliff Layer.” 2014. Masters Thesis, University of Notre Dame. Accessed September 25, 2017. https://curate.nd.edu/show/2r36tx33k81.

MLA Handbook (7th Edition):

Li, Wenjun. “InGaAs/InP Modified Uni-Travelling-Carrier Photodiode with a Cliff Layer.” 2014. Web. 25 Sep 2017.

Vancouver:

Li W. InGaAs/InP Modified Uni-Travelling-Carrier Photodiode with a Cliff Layer. [Internet] [Masters thesis]. University of Notre Dame; 2014. [cited 2017 Sep 25]. Available from: https://curate.nd.edu/show/2r36tx33k81.

Council of Science Editors:

Li W. InGaAs/InP Modified Uni-Travelling-Carrier Photodiode with a Cliff Layer. [Masters Thesis]. University of Notre Dame; 2014. Available from: https://curate.nd.edu/show/2r36tx33k81


University of California – Berkeley

4. Bowonder, Anupama. Low Power Band to Band Tunnel Transistors.

Degree: Electrical Engineering & Computer Sciences, 2010, University of California – Berkeley

 As scaling continues, the number of transistors per unit area and power density are both on the rise. A reduction in Vdd is highly desirable… (more)

Subjects/Keywords: Electrical Engineering; Heterostructure; Low power; Tunneling

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APA (6th Edition):

Bowonder, A. (2010). Low Power Band to Band Tunnel Transistors. (Thesis). University of California – Berkeley. Retrieved from http://www.escholarship.org/uc/item/8pr4h19x

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bowonder, Anupama. “Low Power Band to Band Tunnel Transistors.” 2010. Thesis, University of California – Berkeley. Accessed September 25, 2017. http://www.escholarship.org/uc/item/8pr4h19x.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bowonder, Anupama. “Low Power Band to Band Tunnel Transistors.” 2010. Web. 25 Sep 2017.

Vancouver:

Bowonder A. Low Power Band to Band Tunnel Transistors. [Internet] [Thesis]. University of California – Berkeley; 2010. [cited 2017 Sep 25]. Available from: http://www.escholarship.org/uc/item/8pr4h19x.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bowonder A. Low Power Band to Band Tunnel Transistors. [Thesis]. University of California – Berkeley; 2010. Available from: http://www.escholarship.org/uc/item/8pr4h19x

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Chicago

5. Behranginia, Amirhossein. CVD Molybdenum Disulfide/Graphene Heterostructures: Synthesis and Electrochemical Applications.

Degree: 2016, University of Illinois – Chicago

 There is a rising demand to substitute fossil fuels with environmental-friendly energy resources. Providing hydrogen resource through a water splitting process can be one way… (more)

Subjects/Keywords: Molybdenum disulfide; Graphene; CVD; Heterostructure; HER.

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APA (6th Edition):

Behranginia, A. (2016). CVD Molybdenum Disulfide/Graphene Heterostructures: Synthesis and Electrochemical Applications. (Thesis). University of Illinois – Chicago. Retrieved from http://hdl.handle.net/10027/20981

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Behranginia, Amirhossein. “CVD Molybdenum Disulfide/Graphene Heterostructures: Synthesis and Electrochemical Applications.” 2016. Thesis, University of Illinois – Chicago. Accessed September 25, 2017. http://hdl.handle.net/10027/20981.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Behranginia, Amirhossein. “CVD Molybdenum Disulfide/Graphene Heterostructures: Synthesis and Electrochemical Applications.” 2016. Web. 25 Sep 2017.

Vancouver:

Behranginia A. CVD Molybdenum Disulfide/Graphene Heterostructures: Synthesis and Electrochemical Applications. [Internet] [Thesis]. University of Illinois – Chicago; 2016. [cited 2017 Sep 25]. Available from: http://hdl.handle.net/10027/20981.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Behranginia A. CVD Molybdenum Disulfide/Graphene Heterostructures: Synthesis and Electrochemical Applications. [Thesis]. University of Illinois – Chicago; 2016. Available from: http://hdl.handle.net/10027/20981

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Connecticut

6. Raphael, Johanna. Strain and Dislocations in Nitride-Based Heterostructures.

Degree: MS, Engineering, 2016, University of Connecticut

  This work provides a computational tool for predicting strain and dislocation density in nitride-based heterostructures at equilibrium. The framework and computational tool reviewed in… (more)

Subjects/Keywords: Nitride; Heterostructure; Strain; Dislocation; Wurtzite; Hexagonal; InGaN

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APA (6th Edition):

Raphael, J. (2016). Strain and Dislocations in Nitride-Based Heterostructures. (Masters Thesis). University of Connecticut. Retrieved from http://digitalcommons.uconn.edu/gs_theses/907

Chicago Manual of Style (16th Edition):

Raphael, Johanna. “Strain and Dislocations in Nitride-Based Heterostructures.” 2016. Masters Thesis, University of Connecticut. Accessed September 25, 2017. http://digitalcommons.uconn.edu/gs_theses/907.

MLA Handbook (7th Edition):

Raphael, Johanna. “Strain and Dislocations in Nitride-Based Heterostructures.” 2016. Web. 25 Sep 2017.

Vancouver:

Raphael J. Strain and Dislocations in Nitride-Based Heterostructures. [Internet] [Masters thesis]. University of Connecticut; 2016. [cited 2017 Sep 25]. Available from: http://digitalcommons.uconn.edu/gs_theses/907.

Council of Science Editors:

Raphael J. Strain and Dislocations in Nitride-Based Heterostructures. [Masters Thesis]. University of Connecticut; 2016. Available from: http://digitalcommons.uconn.edu/gs_theses/907


University of Texas – Austin

7. Dillen, David Carl. Confined electron systems in Si-Ge nanowire heterostructures.

Degree: Electrical and Computer Engineering, 2011, University of Texas – Austin

 Semiconductor nanowire field-effect transistors (NWFET) have been recognized as a possible alternative to silicon-based CMOS technology as traditional scaling limits are neared. The core-shell nanowire… (more)

Subjects/Keywords: Core-shell; Nanowire; Strained heterostructure; Modulation-doping

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APA (6th Edition):

Dillen, D. C. (2011). Confined electron systems in Si-Ge nanowire heterostructures. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/ETD-UT-2011-08-4360

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dillen, David Carl. “Confined electron systems in Si-Ge nanowire heterostructures.” 2011. Thesis, University of Texas – Austin. Accessed September 25, 2017. http://hdl.handle.net/2152/ETD-UT-2011-08-4360.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dillen, David Carl. “Confined electron systems in Si-Ge nanowire heterostructures.” 2011. Web. 25 Sep 2017.

Vancouver:

Dillen DC. Confined electron systems in Si-Ge nanowire heterostructures. [Internet] [Thesis]. University of Texas – Austin; 2011. [cited 2017 Sep 25]. Available from: http://hdl.handle.net/2152/ETD-UT-2011-08-4360.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dillen DC. Confined electron systems in Si-Ge nanowire heterostructures. [Thesis]. University of Texas – Austin; 2011. Available from: http://hdl.handle.net/2152/ETD-UT-2011-08-4360

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

8. Eckmann, Axel. Raman spectroscopy of graphene, its derivatives and graphene-based heterostructures.

Degree: PhD, 2013, University of Manchester

 In less than a decade of research, graphene has earned a long list of superlatives to its name and is expected to have applications in… (more)

Subjects/Keywords: 546; Graphene; Raman spectroscopy; Defects; Heterostructure; Photocurrent

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APA (6th Edition):

Eckmann, A. (2013). Raman spectroscopy of graphene, its derivatives and graphene-based heterostructures. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/raman-spectroscopy-of-graphene-its-derivatives-and-graphenebased-heterostructures(fbb9d645-4fb3-4a75-b5c9-9a8483d6e9ac).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607375

Chicago Manual of Style (16th Edition):

Eckmann, Axel. “Raman spectroscopy of graphene, its derivatives and graphene-based heterostructures.” 2013. Doctoral Dissertation, University of Manchester. Accessed September 25, 2017. https://www.research.manchester.ac.uk/portal/en/theses/raman-spectroscopy-of-graphene-its-derivatives-and-graphenebased-heterostructures(fbb9d645-4fb3-4a75-b5c9-9a8483d6e9ac).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607375.

MLA Handbook (7th Edition):

Eckmann, Axel. “Raman spectroscopy of graphene, its derivatives and graphene-based heterostructures.” 2013. Web. 25 Sep 2017.

Vancouver:

Eckmann A. Raman spectroscopy of graphene, its derivatives and graphene-based heterostructures. [Internet] [Doctoral dissertation]. University of Manchester; 2013. [cited 2017 Sep 25]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/raman-spectroscopy-of-graphene-its-derivatives-and-graphenebased-heterostructures(fbb9d645-4fb3-4a75-b5c9-9a8483d6e9ac).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607375.

Council of Science Editors:

Eckmann A. Raman spectroscopy of graphene, its derivatives and graphene-based heterostructures. [Doctoral Dissertation]. University of Manchester; 2013. Available from: https://www.research.manchester.ac.uk/portal/en/theses/raman-spectroscopy-of-graphene-its-derivatives-and-graphenebased-heterostructures(fbb9d645-4fb3-4a75-b5c9-9a8483d6e9ac).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607375

9. Tu, Jhih-Sian. Alignment controlled Graphene on hBN Substrate for Graphene Based Capacitor and Tunneling Transistor.

Degree: 2015, University of Manchester

 Since 2004, graphene attracts intensive attention from scientists and engineers all over the world. During the last decades, the research relates to graphene and other… (more)

Subjects/Keywords: Graphene; Heterostructure

heterostructure. Graphene and hBN is lattice aligned within 2 degrees in difference and creates a new… …Waals heterostructure is constructed by two aligned graphene stripes with a thin layer of hBN… …that differ from that of the original materials. These 2D heterostructure stacks are strongly… …range) has been studied in graphene/hBN heterostructure. The graphene/hBN structure is… …study and possible future applications. GraphenehBN aligned heterostructure capacitor provides… 

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APA (6th Edition):

Tu, J. (2015). Alignment controlled Graphene on hBN Substrate for Graphene Based Capacitor and Tunneling Transistor. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:257833

Chicago Manual of Style (16th Edition):

Tu, Jhih-Sian. “Alignment controlled Graphene on hBN Substrate for Graphene Based Capacitor and Tunneling Transistor.” 2015. Doctoral Dissertation, University of Manchester. Accessed September 25, 2017. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:257833.

MLA Handbook (7th Edition):

Tu, Jhih-Sian. “Alignment controlled Graphene on hBN Substrate for Graphene Based Capacitor and Tunneling Transistor.” 2015. Web. 25 Sep 2017.

Vancouver:

Tu J. Alignment controlled Graphene on hBN Substrate for Graphene Based Capacitor and Tunneling Transistor. [Internet] [Doctoral dissertation]. University of Manchester; 2015. [cited 2017 Sep 25]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:257833.

Council of Science Editors:

Tu J. Alignment controlled Graphene on hBN Substrate for Graphene Based Capacitor and Tunneling Transistor. [Doctoral Dissertation]. University of Manchester; 2015. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:257833


NSYSU

10. Guo, Chuan-Ruei. The study on optoelectronic properties of GaSe/InSe heterostructure.

Degree: Master, Physics, 2017, NSYSU

 2D materials with a wealth of exotic dimensional-dependent properties are promising candidates for next-generation ultrathin and flexible optoelectronic devices. Indium selenide (InSe) and gallium selenide… (more)

Subjects/Keywords: GaSe; InSe; Solar cell; Heterostructure; 2D materials

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APA (6th Edition):

Guo, C. (2017). The study on optoelectronic properties of GaSe/InSe heterostructure. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721117-141230

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Guo, Chuan-Ruei. “The study on optoelectronic properties of GaSe/InSe heterostructure.” 2017. Thesis, NSYSU. Accessed September 25, 2017. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721117-141230.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Guo, Chuan-Ruei. “The study on optoelectronic properties of GaSe/InSe heterostructure.” 2017. Web. 25 Sep 2017.

Vancouver:

Guo C. The study on optoelectronic properties of GaSe/InSe heterostructure. [Internet] [Thesis]. NSYSU; 2017. [cited 2017 Sep 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721117-141230.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Guo C. The study on optoelectronic properties of GaSe/InSe heterostructure. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721117-141230

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

11. McDaniel, Hunter Y. Synthesis, characterization and photovoltaic integration of type II nanorod heterostructures.

Degree: PhD, 0130, 2012, University of Illinois – Urbana-Champaign

 Motivated by a desire to control the actions of charges within materials in new and productive ways, researchers have increasingly focused their efforts on engineering… (more)

Subjects/Keywords: Nanocrystal; Nanorod; Nanocrystal Heterostructure; Nanorod Heterostructure; Heterojunction; Type II; Solar Cell; Photovoltaic; Strain; Colloidal Synthesis

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APA (6th Edition):

McDaniel, H. Y. (2012). Synthesis, characterization and photovoltaic integration of type II nanorod heterostructures. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/29411

Chicago Manual of Style (16th Edition):

McDaniel, Hunter Y. “Synthesis, characterization and photovoltaic integration of type II nanorod heterostructures.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed September 25, 2017. http://hdl.handle.net/2142/29411.

MLA Handbook (7th Edition):

McDaniel, Hunter Y. “Synthesis, characterization and photovoltaic integration of type II nanorod heterostructures.” 2012. Web. 25 Sep 2017.

Vancouver:

McDaniel HY. Synthesis, characterization and photovoltaic integration of type II nanorod heterostructures. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2017 Sep 25]. Available from: http://hdl.handle.net/2142/29411.

Council of Science Editors:

McDaniel HY. Synthesis, characterization and photovoltaic integration of type II nanorod heterostructures. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/29411

12. Yadranjee Aghdam, Parisa. Sb-Heterostructure Backward Diode for Millimetre-Wave Detection.

Degree: 2012, Chalmers University of Technology

 Sb-heterostructure backward diode (HBD) is one of the most promising candidates for millimitre-wave and terahertz direct detection. Sb-HBDs have demonstrated excellent performance in the millimetre-wave… (more)

Subjects/Keywords: millimetre-wave detectors; terahertz; direct detectors; Sb-heterostructure

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APA (6th Edition):

Yadranjee Aghdam, P. (2012). Sb-Heterostructure Backward Diode for Millimetre-Wave Detection. (Thesis). Chalmers University of Technology. Retrieved from http://studentarbeten.chalmers.se/publication/160379-sb-heterostructure-backward-diode-for-millimetre-wave-detection

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yadranjee Aghdam, Parisa. “Sb-Heterostructure Backward Diode for Millimetre-Wave Detection.” 2012. Thesis, Chalmers University of Technology. Accessed September 25, 2017. http://studentarbeten.chalmers.se/publication/160379-sb-heterostructure-backward-diode-for-millimetre-wave-detection.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yadranjee Aghdam, Parisa. “Sb-Heterostructure Backward Diode for Millimetre-Wave Detection.” 2012. Web. 25 Sep 2017.

Vancouver:

Yadranjee Aghdam P. Sb-Heterostructure Backward Diode for Millimetre-Wave Detection. [Internet] [Thesis]. Chalmers University of Technology; 2012. [cited 2017 Sep 25]. Available from: http://studentarbeten.chalmers.se/publication/160379-sb-heterostructure-backward-diode-for-millimetre-wave-detection.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yadranjee Aghdam P. Sb-Heterostructure Backward Diode for Millimetre-Wave Detection. [Thesis]. Chalmers University of Technology; 2012. Available from: http://studentarbeten.chalmers.se/publication/160379-sb-heterostructure-backward-diode-for-millimetre-wave-detection

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

13. Sweeny, Brendan C. A Study of Plasmon-Mediated Electron Transfer on the Single Nanostructure Level.

Degree: Chemistry, 2012, University of Florida

Subjects/Keywords: gold; heterostructure; photocatalysis; plasmonics; titania

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APA (6th Edition):

Sweeny, B. C. (2012). A Study of Plasmon-Mediated Electron Transfer on the Single Nanostructure Level. (Masters Thesis). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0044212

Chicago Manual of Style (16th Edition):

Sweeny, Brendan C. “A Study of Plasmon-Mediated Electron Transfer on the Single Nanostructure Level.” 2012. Masters Thesis, University of Florida. Accessed September 25, 2017. http://ufdc.ufl.edu/UFE0044212.

MLA Handbook (7th Edition):

Sweeny, Brendan C. “A Study of Plasmon-Mediated Electron Transfer on the Single Nanostructure Level.” 2012. Web. 25 Sep 2017.

Vancouver:

Sweeny BC. A Study of Plasmon-Mediated Electron Transfer on the Single Nanostructure Level. [Internet] [Masters thesis]. University of Florida; 2012. [cited 2017 Sep 25]. Available from: http://ufdc.ufl.edu/UFE0044212.

Council of Science Editors:

Sweeny BC. A Study of Plasmon-Mediated Electron Transfer on the Single Nanostructure Level. [Masters Thesis]. University of Florida; 2012. Available from: http://ufdc.ufl.edu/UFE0044212


University of Florida

14. Pajerowski, Daniel. Photoinduced Magnetism in Nanostructures of Prussian Blue Analogues.

Degree: Physics, 2010, University of Florida

 A wide range of experimental and theoretical investigations have been made on nanostructures of Prussian blue analogues, and a variety of results have been obtained.… (more)

Subjects/Keywords: complex, heterostructure, hexacyanochromate, hexacyanoferrate, nanoparticle, photoinduced, prussian, solid, thin; Physics

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APA (6th Edition):

Pajerowski, D. (2010). Photoinduced Magnetism in Nanostructures of Prussian Blue Analogues. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0041849

Chicago Manual of Style (16th Edition):

Pajerowski, Daniel. “Photoinduced Magnetism in Nanostructures of Prussian Blue Analogues.” 2010. Doctoral Dissertation, University of Florida. Accessed September 25, 2017. http://ufdc.ufl.edu/UFE0041849.

MLA Handbook (7th Edition):

Pajerowski, Daniel. “Photoinduced Magnetism in Nanostructures of Prussian Blue Analogues.” 2010. Web. 25 Sep 2017.

Vancouver:

Pajerowski D. Photoinduced Magnetism in Nanostructures of Prussian Blue Analogues. [Internet] [Doctoral dissertation]. University of Florida; 2010. [cited 2017 Sep 25]. Available from: http://ufdc.ufl.edu/UFE0041849.

Council of Science Editors:

Pajerowski D. Photoinduced Magnetism in Nanostructures of Prussian Blue Analogues. [Doctoral Dissertation]. University of Florida; 2010. Available from: http://ufdc.ufl.edu/UFE0041849


University of Southern California

15. Magruder, Kelly Christopher. Optimal electronic device design.

Degree: PhD, Electrical Engineering, 2011, University of Southern California

 A physical model of electron transport through nanoscale semiconductor heterostructures is developed featuring self-consistent solution of the Schroedinger and Poisson equations for the potential. Using… (more)

Subjects/Keywords: heterostructure diode; optimal design; electron-phonon interaction; inelastic scattering; electron transport

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APA (6th Edition):

Magruder, K. C. (2011). Optimal electronic device design. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/159108/rec/4575

Chicago Manual of Style (16th Edition):

Magruder, Kelly Christopher. “Optimal electronic device design.” 2011. Doctoral Dissertation, University of Southern California. Accessed September 25, 2017. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/159108/rec/4575.

MLA Handbook (7th Edition):

Magruder, Kelly Christopher. “Optimal electronic device design.” 2011. Web. 25 Sep 2017.

Vancouver:

Magruder KC. Optimal electronic device design. [Internet] [Doctoral dissertation]. University of Southern California; 2011. [cited 2017 Sep 25]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/159108/rec/4575.

Council of Science Editors:

Magruder KC. Optimal electronic device design. [Doctoral Dissertation]. University of Southern California; 2011. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/159108/rec/4575


NSYSU

16. Yu, Ting-yu. Effect of interfacial states on scanning tunneling spectroscopy in heterostructures.

Degree: Master, Physics, 2013, NSYSU

 Trapped electrons at interface states in heterostructures are concerned with the electronic properties. In this work, the effect of interface states on scanning tunneling spectroscopy… (more)

Subjects/Keywords: Heterostructure; Cross-section; Scanning tunneling microscopy; Scanning tunneling spectroscopy; Interface state

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APA (6th Edition):

Yu, T. (2013). Effect of interfacial states on scanning tunneling spectroscopy in heterostructures. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0605113-162402

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yu, Ting-yu. “Effect of interfacial states on scanning tunneling spectroscopy in heterostructures.” 2013. Thesis, NSYSU. Accessed September 25, 2017. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0605113-162402.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yu, Ting-yu. “Effect of interfacial states on scanning tunneling spectroscopy in heterostructures.” 2013. Web. 25 Sep 2017.

Vancouver:

Yu T. Effect of interfacial states on scanning tunneling spectroscopy in heterostructures. [Internet] [Thesis]. NSYSU; 2013. [cited 2017 Sep 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0605113-162402.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yu T. Effect of interfacial states on scanning tunneling spectroscopy in heterostructures. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0605113-162402

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

17. Chang, Hsien-Cheng. Investigation of AlGaN/GaN Heterostructure Using Photoluminescence.

Degree: Master, Physics, 2007, NSYSU

 We study AlGaN/GaN heterostucture using temperature dependent micro-photoluminescence. Detailing its principle, operation process and analysis is to provide usage experiences for posterity's reference. The experiment's… (more)

Subjects/Keywords: GaN; Heterostructure; PL; Photoluminescence

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APA (6th Edition):

Chang, H. (2007). Investigation of AlGaN/GaN Heterostructure Using Photoluminescence. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702107-181047

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Hsien-Cheng. “Investigation of AlGaN/GaN Heterostructure Using Photoluminescence.” 2007. Thesis, NSYSU. Accessed September 25, 2017. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702107-181047.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Hsien-Cheng. “Investigation of AlGaN/GaN Heterostructure Using Photoluminescence.” 2007. Web. 25 Sep 2017.

Vancouver:

Chang H. Investigation of AlGaN/GaN Heterostructure Using Photoluminescence. [Internet] [Thesis]. NSYSU; 2007. [cited 2017 Sep 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702107-181047.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang H. Investigation of AlGaN/GaN Heterostructure Using Photoluminescence. [Thesis]. NSYSU; 2007. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702107-181047

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

18. Wang, Ying-Chieh. Study of GaN and its alloys for spintronics and optoelectronics.

Degree: PhD, Physics, 2015, NSYSU

 The potential of wurtzite GaN and it alloys for applying in the spintronics and optoelectronics has been discussed in this dissertation. For the application of… (more)

Subjects/Keywords: MBE; GaN microdisk; spin-splitting; nano-device; AlGaN/GaN heterostructure; GaN

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APA (6th Edition):

Wang, Y. (2015). Study of GaN and its alloys for spintronics and optoelectronics. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134

Chicago Manual of Style (16th Edition):

Wang, Ying-Chieh. “Study of GaN and its alloys for spintronics and optoelectronics.” 2015. Doctoral Dissertation, NSYSU. Accessed September 25, 2017. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134.

MLA Handbook (7th Edition):

Wang, Ying-Chieh. “Study of GaN and its alloys for spintronics and optoelectronics.” 2015. Web. 25 Sep 2017.

Vancouver:

Wang Y. Study of GaN and its alloys for spintronics and optoelectronics. [Internet] [Doctoral dissertation]. NSYSU; 2015. [cited 2017 Sep 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134.

Council of Science Editors:

Wang Y. Study of GaN and its alloys for spintronics and optoelectronics. [Doctoral Dissertation]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134


University of California – Riverside

19. Ionescu, Robert. Synthesis, Characterization and Processing of Exotic 2D Materials Beyond Graphene via Chemical Vapor Deposition Techniques.

Degree: Materials Science and Engineering, 2016, University of California – Riverside

 Over the last decade, since the introduction of graphene in 2004, 2D materials have become a very hot topic. Excellent chemical and mechanical stability along… (more)

Subjects/Keywords: Materials Science; 2D; Chemical Vapor Deposition; Heterostructure; Raman; Semiconductor; Transition Metals

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APA (6th Edition):

Ionescu, R. (2016). Synthesis, Characterization and Processing of Exotic 2D Materials Beyond Graphene via Chemical Vapor Deposition Techniques. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/8p08341b

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ionescu, Robert. “Synthesis, Characterization and Processing of Exotic 2D Materials Beyond Graphene via Chemical Vapor Deposition Techniques.” 2016. Thesis, University of California – Riverside. Accessed September 25, 2017. http://www.escholarship.org/uc/item/8p08341b.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ionescu, Robert. “Synthesis, Characterization and Processing of Exotic 2D Materials Beyond Graphene via Chemical Vapor Deposition Techniques.” 2016. Web. 25 Sep 2017.

Vancouver:

Ionescu R. Synthesis, Characterization and Processing of Exotic 2D Materials Beyond Graphene via Chemical Vapor Deposition Techniques. [Internet] [Thesis]. University of California – Riverside; 2016. [cited 2017 Sep 25]. Available from: http://www.escholarship.org/uc/item/8p08341b.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ionescu R. Synthesis, Characterization and Processing of Exotic 2D Materials Beyond Graphene via Chemical Vapor Deposition Techniques. [Thesis]. University of California – Riverside; 2016. Available from: http://www.escholarship.org/uc/item/8p08341b

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Central Florida

20. Saxena, Himanshu. Tunable Terahertz Detectors Based On Plasmon Exciation In Two Dimensional Electron Gasses In Ingaas/inp And Algan/gan Hemt.

Degree: 2009, University of Central Florida

 The observation of voltage-tunable plasmon resonances in the terahertz range in two dimensional electron gas (2-deg) of a high electron mobility transistor (HEMT) fabricated from… (more)

Subjects/Keywords: HEMT; Plasmon; THz; 2deg; InGaAs/InP; Heterostructure; Physics

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APA (6th Edition):

Saxena, H. (2009). Tunable Terahertz Detectors Based On Plasmon Exciation In Two Dimensional Electron Gasses In Ingaas/inp And Algan/gan Hemt. (Doctoral Dissertation). University of Central Florida. Retrieved from http://stars.library.ucf.edu/etd/3943

Chicago Manual of Style (16th Edition):

Saxena, Himanshu. “Tunable Terahertz Detectors Based On Plasmon Exciation In Two Dimensional Electron Gasses In Ingaas/inp And Algan/gan Hemt.” 2009. Doctoral Dissertation, University of Central Florida. Accessed September 25, 2017. http://stars.library.ucf.edu/etd/3943.

MLA Handbook (7th Edition):

Saxena, Himanshu. “Tunable Terahertz Detectors Based On Plasmon Exciation In Two Dimensional Electron Gasses In Ingaas/inp And Algan/gan Hemt.” 2009. Web. 25 Sep 2017.

Vancouver:

Saxena H. Tunable Terahertz Detectors Based On Plasmon Exciation In Two Dimensional Electron Gasses In Ingaas/inp And Algan/gan Hemt. [Internet] [Doctoral dissertation]. University of Central Florida; 2009. [cited 2017 Sep 25]. Available from: http://stars.library.ucf.edu/etd/3943.

Council of Science Editors:

Saxena H. Tunable Terahertz Detectors Based On Plasmon Exciation In Two Dimensional Electron Gasses In Ingaas/inp And Algan/gan Hemt. [Doctoral Dissertation]. University of Central Florida; 2009. Available from: http://stars.library.ucf.edu/etd/3943


University of California – Berkeley

21. Yu, Pu. Emergent Phenomena at Complex Oxide Interfaces.

Degree: Physics, 2011, University of California – Berkeley

 Novel phenomena and functionalities at epitaxial complex oxide heterostructures have been attracting huge scientific attention because of the intriguing fundamental physics as well as potential… (more)

Subjects/Keywords: Physics; Materials Science; charge; complex oxide; heterostructure; interface; spin; thin film

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APA (6th Edition):

Yu, P. (2011). Emergent Phenomena at Complex Oxide Interfaces. (Thesis). University of California – Berkeley. Retrieved from http://www.escholarship.org/uc/item/3669c7g2

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yu, Pu. “Emergent Phenomena at Complex Oxide Interfaces.” 2011. Thesis, University of California – Berkeley. Accessed September 25, 2017. http://www.escholarship.org/uc/item/3669c7g2.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yu, Pu. “Emergent Phenomena at Complex Oxide Interfaces.” 2011. Web. 25 Sep 2017.

Vancouver:

Yu P. Emergent Phenomena at Complex Oxide Interfaces. [Internet] [Thesis]. University of California – Berkeley; 2011. [cited 2017 Sep 25]. Available from: http://www.escholarship.org/uc/item/3669c7g2.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yu P. Emergent Phenomena at Complex Oxide Interfaces. [Thesis]. University of California – Berkeley; 2011. Available from: http://www.escholarship.org/uc/item/3669c7g2

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


UCLA

22. Cheng, Rui. Two-dimensional materials as a new platform for atomically thin electronics and optoelectronics.

Degree: Materials Science and Engineering, 2014, UCLA

 The discovery of graphene, made of single-layer carbon atoms, defines the starting point in the research and development of stable two-dimensional layer materials (2DLMs). Graphene… (more)

Subjects/Keywords: Nanotechnology; Electrical engineering; Materials Science; 2D; electronics; Graphene; heterostructure; TMDc

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APA (6th Edition):

Cheng, R. (2014). Two-dimensional materials as a new platform for atomically thin electronics and optoelectronics. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/7r405223

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cheng, Rui. “Two-dimensional materials as a new platform for atomically thin electronics and optoelectronics.” 2014. Thesis, UCLA. Accessed September 25, 2017. http://www.escholarship.org/uc/item/7r405223.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cheng, Rui. “Two-dimensional materials as a new platform for atomically thin electronics and optoelectronics.” 2014. Web. 25 Sep 2017.

Vancouver:

Cheng R. Two-dimensional materials as a new platform for atomically thin electronics and optoelectronics. [Internet] [Thesis]. UCLA; 2014. [cited 2017 Sep 25]. Available from: http://www.escholarship.org/uc/item/7r405223.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cheng R. Two-dimensional materials as a new platform for atomically thin electronics and optoelectronics. [Thesis]. UCLA; 2014. Available from: http://www.escholarship.org/uc/item/7r405223

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

23. Ze Zhang. Sb-Heterostructure Backward Diodes for Direct Detection and Passive Millimeter-Wave Imaging.

Degree: PhD, Electrical Engineering, 2011, University of Notre Dame

  Sb-heterostructure backward diodes have demonstrated their potential as high sensitivity, low-noise, high cutoff frequency and broadband millimeter-wave detectors. This work presents further improvements in… (more)

Subjects/Keywords: millimeter-wave detector; backward tunnel diode; Sb-heterostructure

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APA (6th Edition):

Zhang, Z. (2011). Sb-Heterostructure Backward Diodes for Direct Detection and Passive Millimeter-Wave Imaging. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/br86b279642

Chicago Manual of Style (16th Edition):

Zhang, Ze. “Sb-Heterostructure Backward Diodes for Direct Detection and Passive Millimeter-Wave Imaging.” 2011. Doctoral Dissertation, University of Notre Dame. Accessed September 25, 2017. https://curate.nd.edu/show/br86b279642.

MLA Handbook (7th Edition):

Zhang, Ze. “Sb-Heterostructure Backward Diodes for Direct Detection and Passive Millimeter-Wave Imaging.” 2011. Web. 25 Sep 2017.

Vancouver:

Zhang Z. Sb-Heterostructure Backward Diodes for Direct Detection and Passive Millimeter-Wave Imaging. [Internet] [Doctoral dissertation]. University of Notre Dame; 2011. [cited 2017 Sep 25]. Available from: https://curate.nd.edu/show/br86b279642.

Council of Science Editors:

Zhang Z. Sb-Heterostructure Backward Diodes for Direct Detection and Passive Millimeter-Wave Imaging. [Doctoral Dissertation]. University of Notre Dame; 2011. Available from: https://curate.nd.edu/show/br86b279642

24. Tu, Jhih-Sian. Alignment controlled graphene on hBN substrate for graphene based capacitor and tunneling transistor.

Degree: PhD, 2015, University of Manchester

 Since 2004, graphene attracts intensive attention from scientists and engineers all over the world. During the last decades, the research relates to graphene and other… (more)

Subjects/Keywords: 537.6; Graphene; Heterostructure

heterostructure. Graphene and hBN is lattice aligned within 2 degrees in difference and creates a new… …Waals heterostructure is constructed by two aligned graphene stripes with a thin layer of hBN… …that differ from that of the original materials. These 2D heterostructure stacks are strongly… …range) has been studied in graphene/hBN heterostructure. The graphene/hBN structure is… …study and possible future applications. GraphenehBN aligned heterostructure capacitor provides… 

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APA (6th Edition):

Tu, J. (2015). Alignment controlled graphene on hBN substrate for graphene based capacitor and tunneling transistor. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/alignment-controlled-graphene-on-hbn-substrate-for-graphene-based-capacitor-and-tunneling-transistor(03fa01ea-28a2-47f7-b721-ef30c16147ac).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.634968

Chicago Manual of Style (16th Edition):

Tu, Jhih-Sian. “Alignment controlled graphene on hBN substrate for graphene based capacitor and tunneling transistor.” 2015. Doctoral Dissertation, University of Manchester. Accessed September 25, 2017. https://www.research.manchester.ac.uk/portal/en/theses/alignment-controlled-graphene-on-hbn-substrate-for-graphene-based-capacitor-and-tunneling-transistor(03fa01ea-28a2-47f7-b721-ef30c16147ac).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.634968.

MLA Handbook (7th Edition):

Tu, Jhih-Sian. “Alignment controlled graphene on hBN substrate for graphene based capacitor and tunneling transistor.” 2015. Web. 25 Sep 2017.

Vancouver:

Tu J. Alignment controlled graphene on hBN substrate for graphene based capacitor and tunneling transistor. [Internet] [Doctoral dissertation]. University of Manchester; 2015. [cited 2017 Sep 25]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/alignment-controlled-graphene-on-hbn-substrate-for-graphene-based-capacitor-and-tunneling-transistor(03fa01ea-28a2-47f7-b721-ef30c16147ac).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.634968.

Council of Science Editors:

Tu J. Alignment controlled graphene on hBN substrate for graphene based capacitor and tunneling transistor. [Doctoral Dissertation]. University of Manchester; 2015. Available from: https://www.research.manchester.ac.uk/portal/en/theses/alignment-controlled-graphene-on-hbn-substrate-for-graphene-based-capacitor-and-tunneling-transistor(03fa01ea-28a2-47f7-b721-ef30c16147ac).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.634968


McMaster University

25. Miki, Carley. Growth and Characterization of CdTe/ZnTe Thin Films and Heterostructures.

Degree: MSc, 2014, McMaster University

CdTe and ZnTe are common semiconductors, currently used in a wide variety of applications. Heterostructures, composed of two or more layered materials, create further potential… (more)

Subjects/Keywords: Thin Films; Pulsed laser deposition; Heterostructure; CdTe; Crystal structure; ZnTe; Epitaxy

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APA (6th Edition):

Miki, C. (2014). Growth and Characterization of CdTe/ZnTe Thin Films and Heterostructures. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/16288

Chicago Manual of Style (16th Edition):

Miki, Carley. “Growth and Characterization of CdTe/ZnTe Thin Films and Heterostructures.” 2014. Masters Thesis, McMaster University. Accessed September 25, 2017. http://hdl.handle.net/11375/16288.

MLA Handbook (7th Edition):

Miki, Carley. “Growth and Characterization of CdTe/ZnTe Thin Films and Heterostructures.” 2014. Web. 25 Sep 2017.

Vancouver:

Miki C. Growth and Characterization of CdTe/ZnTe Thin Films and Heterostructures. [Internet] [Masters thesis]. McMaster University; 2014. [cited 2017 Sep 25]. Available from: http://hdl.handle.net/11375/16288.

Council of Science Editors:

Miki C. Growth and Characterization of CdTe/ZnTe Thin Films and Heterostructures. [Masters Thesis]. McMaster University; 2014. Available from: http://hdl.handle.net/11375/16288


Princeton University

26. Man, Gabriel Jen Shi. Metal oxide/semiconductor heterojunctions as carrier-selective contacts for photovoltaic applications .

Degree: PhD, 2017, Princeton University

 Solar radiation is a vast, distributed, and renewable energy source which Humanity can utilize via the photovoltaic effect. The goal of photovoltaic technology is to… (more)

Subjects/Keywords: Heterocontact; Heterojunction; Heterostructure; Metal halide perovskite; Silicon; Solar cell

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APA (6th Edition):

Man, G. J. S. (2017). Metal oxide/semiconductor heterojunctions as carrier-selective contacts for photovoltaic applications . (Doctoral Dissertation). Princeton University. Retrieved from http://arks.princeton.edu/ark:/88435/dsp012b88qf793

Chicago Manual of Style (16th Edition):

Man, Gabriel Jen Shi. “Metal oxide/semiconductor heterojunctions as carrier-selective contacts for photovoltaic applications .” 2017. Doctoral Dissertation, Princeton University. Accessed September 25, 2017. http://arks.princeton.edu/ark:/88435/dsp012b88qf793.

MLA Handbook (7th Edition):

Man, Gabriel Jen Shi. “Metal oxide/semiconductor heterojunctions as carrier-selective contacts for photovoltaic applications .” 2017. Web. 25 Sep 2017.

Vancouver:

Man GJS. Metal oxide/semiconductor heterojunctions as carrier-selective contacts for photovoltaic applications . [Internet] [Doctoral dissertation]. Princeton University; 2017. [cited 2017 Sep 25]. Available from: http://arks.princeton.edu/ark:/88435/dsp012b88qf793.

Council of Science Editors:

Man GJS. Metal oxide/semiconductor heterojunctions as carrier-selective contacts for photovoltaic applications . [Doctoral Dissertation]. Princeton University; 2017. Available from: http://arks.princeton.edu/ark:/88435/dsp012b88qf793


University of Florida

27. Wood, Ryan Matthew. Strain Enhanced Optically Pumped Nuclear Magnetic Resonance in Bulk and Quantum Confined III-V Semiconductors.

Degree: Chemistry, 2014, University of Florida

 This dissertation is concerned with enhancing optically pumped nuclear spin polarization in III-V semiconductors via lattice strain and quantum confinement. Optical manipulation of electron and… (more)

Subjects/Keywords: algaas  – confinement  – gaas  – heterostructure  – nmr  – onp  – opnmr  – optical  – polarization  – spin  – strain; Chemistry

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APA (6th Edition):

Wood, R. M. (2014). Strain Enhanced Optically Pumped Nuclear Magnetic Resonance in Bulk and Quantum Confined III-V Semiconductors. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0047113

Chicago Manual of Style (16th Edition):

Wood, Ryan Matthew. “Strain Enhanced Optically Pumped Nuclear Magnetic Resonance in Bulk and Quantum Confined III-V Semiconductors.” 2014. Doctoral Dissertation, University of Florida. Accessed September 25, 2017. http://ufdc.ufl.edu/UFE0047113.

MLA Handbook (7th Edition):

Wood, Ryan Matthew. “Strain Enhanced Optically Pumped Nuclear Magnetic Resonance in Bulk and Quantum Confined III-V Semiconductors.” 2014. Web. 25 Sep 2017.

Vancouver:

Wood RM. Strain Enhanced Optically Pumped Nuclear Magnetic Resonance in Bulk and Quantum Confined III-V Semiconductors. [Internet] [Doctoral dissertation]. University of Florida; 2014. [cited 2017 Sep 25]. Available from: http://ufdc.ufl.edu/UFE0047113.

Council of Science Editors:

Wood RM. Strain Enhanced Optically Pumped Nuclear Magnetic Resonance in Bulk and Quantum Confined III-V Semiconductors. [Doctoral Dissertation]. University of Florida; 2014. Available from: http://ufdc.ufl.edu/UFE0047113


Anna University

28. Gnanapragasam, Sonia. Investigations on high and low energy radiation effects on AlGaN GaN HFET devices and thick GaN layer; -.

Degree: Science and Humanities, 2014, Anna University

The aim of this thesis is to study some of the important basic and technological issues associated with irradiation effects on AlGaN GaN Heterostructure Field… (more)

Subjects/Keywords: GaN layer; Heterostructure field effect transistor; High energy radiation; Low energy radiation; Science and humanities

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gnanapragasam, S. (2014). Investigations on high and low energy radiation effects on AlGaN GaN HFET devices and thick GaN layer; -. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/27255

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gnanapragasam, Sonia. “Investigations on high and low energy radiation effects on AlGaN GaN HFET devices and thick GaN layer; -.” 2014. Thesis, Anna University. Accessed September 25, 2017. http://shodhganga.inflibnet.ac.in/handle/10603/27255.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gnanapragasam, Sonia. “Investigations on high and low energy radiation effects on AlGaN GaN HFET devices and thick GaN layer; -.” 2014. Web. 25 Sep 2017.

Vancouver:

Gnanapragasam S. Investigations on high and low energy radiation effects on AlGaN GaN HFET devices and thick GaN layer; -. [Internet] [Thesis]. Anna University; 2014. [cited 2017 Sep 25]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/27255.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gnanapragasam S. Investigations on high and low energy radiation effects on AlGaN GaN HFET devices and thick GaN layer; -. [Thesis]. Anna University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/27255

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of California – Riverside

29. Ge, Supeng. Electronic Properties of Misoriented Two-Dimensional Materials.

Degree: Physics, 2016, University of California – Riverside

 Van der Waals (vdW) heterostructures assembled from monolayers (one or a few) of graphene, hexagonal boron nitride (h-BN) are emerging as a new paradigm with… (more)

Subjects/Keywords: Condensed matter physics; Theoretical physics; Physics; Graphene; Heterostructure; misorientation; NEFG; tranport; Two-Dimensional Materials

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ge, S. (2016). Electronic Properties of Misoriented Two-Dimensional Materials. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/79t864k7

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ge, Supeng. “Electronic Properties of Misoriented Two-Dimensional Materials.” 2016. Thesis, University of California – Riverside. Accessed September 25, 2017. http://www.escholarship.org/uc/item/79t864k7.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ge, Supeng. “Electronic Properties of Misoriented Two-Dimensional Materials.” 2016. Web. 25 Sep 2017.

Vancouver:

Ge S. Electronic Properties of Misoriented Two-Dimensional Materials. [Internet] [Thesis]. University of California – Riverside; 2016. [cited 2017 Sep 25]. Available from: http://www.escholarship.org/uc/item/79t864k7.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ge S. Electronic Properties of Misoriented Two-Dimensional Materials. [Thesis]. University of California – Riverside; 2016. Available from: http://www.escholarship.org/uc/item/79t864k7

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

30. Goyal, Puneet. Design and simulation of strained-Si/strained-SiGe dual channel hetero-structure MOSFETs.

Degree: Electrical Engineering, 2007, Rochester Institute of Technology

 With a unified physics-based model linking MOSFET performance to carrier mobility and drive current, it is shown that nearly continuous carrier mobility increase has been… (more)

Subjects/Keywords: Analytical model; Device modeling; Dual channel heterostructure; Inversion mobility; Strain Si/SiGe; Strain; Virtual substrate

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Goyal, P. (2007). Design and simulation of strained-Si/strained-SiGe dual channel hetero-structure MOSFETs. (Thesis). Rochester Institute of Technology. Retrieved from http://scholarworks.rit.edu/theses/6925

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Goyal, Puneet. “Design and simulation of strained-Si/strained-SiGe dual channel hetero-structure MOSFETs.” 2007. Thesis, Rochester Institute of Technology. Accessed September 25, 2017. http://scholarworks.rit.edu/theses/6925.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Goyal, Puneet. “Design and simulation of strained-Si/strained-SiGe dual channel hetero-structure MOSFETs.” 2007. Web. 25 Sep 2017.

Vancouver:

Goyal P. Design and simulation of strained-Si/strained-SiGe dual channel hetero-structure MOSFETs. [Internet] [Thesis]. Rochester Institute of Technology; 2007. [cited 2017 Sep 25]. Available from: http://scholarworks.rit.edu/theses/6925.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Goyal P. Design and simulation of strained-Si/strained-SiGe dual channel hetero-structure MOSFETs. [Thesis]. Rochester Institute of Technology; 2007. Available from: http://scholarworks.rit.edu/theses/6925

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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