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You searched for subject:(hafnium oxide). Showing records 1 – 30 of 53 total matches.

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Oregon State University

1. Ray, Peter William. Characterization of Carboxylic Acids on Hafnium Oxide Thin Films.

Degree: MS, Chemical Engineering, 2015, Oregon State University

Hafnium Oxide thin films has had growing attention due hafnium oxide being used as a gate dielectric for MOSFET transistors and a potential next generation… (more)

Subjects/Keywords: Hafnium Oxide; Thin films

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APA (6th Edition):

Ray, P. W. (2015). Characterization of Carboxylic Acids on Hafnium Oxide Thin Films. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/57430

Chicago Manual of Style (16th Edition):

Ray, Peter William. “Characterization of Carboxylic Acids on Hafnium Oxide Thin Films.” 2015. Masters Thesis, Oregon State University. Accessed August 12, 2020. http://hdl.handle.net/1957/57430.

MLA Handbook (7th Edition):

Ray, Peter William. “Characterization of Carboxylic Acids on Hafnium Oxide Thin Films.” 2015. Web. 12 Aug 2020.

Vancouver:

Ray PW. Characterization of Carboxylic Acids on Hafnium Oxide Thin Films. [Internet] [Masters thesis]. Oregon State University; 2015. [cited 2020 Aug 12]. Available from: http://hdl.handle.net/1957/57430.

Council of Science Editors:

Ray PW. Characterization of Carboxylic Acids on Hafnium Oxide Thin Films. [Masters Thesis]. Oregon State University; 2015. Available from: http://hdl.handle.net/1957/57430


Rochester Institute of Technology

2. McMurdy, George. Fabrication of Al:HfO2 Gate Dielectric MOSFETs.

Degree: MS, Microelectronic Engineering, 2019, Rochester Institute of Technology

  Replacing the traditional SiO2 gate oxide in a MOSFET with ferroelectric HfO2 creates a 1T memory device referred to as a FeFET. The bi-stable… (more)

Subjects/Keywords: Charge trapping; Ferroelectricity; Hafnium oxide; MOSFET; Semiconductor

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APA (6th Edition):

McMurdy, G. (2019). Fabrication of Al:HfO2 Gate Dielectric MOSFETs. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/10288

Chicago Manual of Style (16th Edition):

McMurdy, George. “Fabrication of Al:HfO2 Gate Dielectric MOSFETs.” 2019. Masters Thesis, Rochester Institute of Technology. Accessed August 12, 2020. https://scholarworks.rit.edu/theses/10288.

MLA Handbook (7th Edition):

McMurdy, George. “Fabrication of Al:HfO2 Gate Dielectric MOSFETs.” 2019. Web. 12 Aug 2020.

Vancouver:

McMurdy G. Fabrication of Al:HfO2 Gate Dielectric MOSFETs. [Internet] [Masters thesis]. Rochester Institute of Technology; 2019. [cited 2020 Aug 12]. Available from: https://scholarworks.rit.edu/theses/10288.

Council of Science Editors:

McMurdy G. Fabrication of Al:HfO2 Gate Dielectric MOSFETs. [Masters Thesis]. Rochester Institute of Technology; 2019. Available from: https://scholarworks.rit.edu/theses/10288


University of Alberta

3. Afshar, Amir. Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition.

Degree: PhD, Department of Chemical and Materials Engineering, 2014, University of Alberta

 Gallium Nitride (GaN) is recognized as one of the best candidates for high-power high-frequency metal-oxide-semiconductor field-effect-transistors (MOSFETs). The critical component to enable this technology is… (more)

Subjects/Keywords: Density Functional Theory; Zirconium Oxide; Atomic Layer Deposition; Hafnium Oxide; Growth Mechanism; Zinc Oxide

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APA (6th Edition):

Afshar, A. (2014). Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition. (Doctoral Dissertation). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/cs4655g604

Chicago Manual of Style (16th Edition):

Afshar, Amir. “Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition.” 2014. Doctoral Dissertation, University of Alberta. Accessed August 12, 2020. https://era.library.ualberta.ca/files/cs4655g604.

MLA Handbook (7th Edition):

Afshar, Amir. “Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition.” 2014. Web. 12 Aug 2020.

Vancouver:

Afshar A. Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition. [Internet] [Doctoral dissertation]. University of Alberta; 2014. [cited 2020 Aug 12]. Available from: https://era.library.ualberta.ca/files/cs4655g604.

Council of Science Editors:

Afshar A. Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition. [Doctoral Dissertation]. University of Alberta; 2014. Available from: https://era.library.ualberta.ca/files/cs4655g604


NSYSU

4. Yang, Cheng-Chi. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 We find that the forming voltage will become larger when the cell size is scale down which might deter the real applications for RRAM devices.… (more)

Subjects/Keywords: Thermal conductivity coefficient; Dielectric coefficient; Reliability; Hafnium oxide; Side wall; RRAM

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APA (6th Edition):

Yang, C. (2017). Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Cheng-Chi. “Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.” 2017. Thesis, NSYSU. Accessed August 12, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Cheng-Chi. “Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.” 2017. Web. 12 Aug 2020.

Vancouver:

Yang C. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. [Internet] [Thesis]. NSYSU; 2017. [cited 2020 Aug 12]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang C. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

5. Telecky, Alan J. Photoresist and ion-exchange chemistry of HafSOx.

Degree: PhD, 2012, Oregon State University

 The chemistry of hafnium oxide based and materials are described in the context of ion exchange and lithography. HafSOx, represented by the composition HfO₂₋[subscript x](SO₄)x,… (more)

Subjects/Keywords: chemistry; Hafnium oxide

hafnium oxide (HfO2). Many of these oxides are prepared as high-quality films through… …implications, including a background of metal oxide solution chemistry, an introduction to ion… …thin film oxides such as zinc oxide (ZnO), indium tin oxide (ITO), and… …utilization. On the other hand, solution processing of metal oxide films can offer certain… …vast library of solution routes for deposition of metal oxide thin films can be found in the… 

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APA (6th Edition):

Telecky, A. J. (2012). Photoresist and ion-exchange chemistry of HafSOx. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/29732

Chicago Manual of Style (16th Edition):

Telecky, Alan J. “Photoresist and ion-exchange chemistry of HafSOx.” 2012. Doctoral Dissertation, Oregon State University. Accessed August 12, 2020. http://hdl.handle.net/1957/29732.

MLA Handbook (7th Edition):

Telecky, Alan J. “Photoresist and ion-exchange chemistry of HafSOx.” 2012. Web. 12 Aug 2020.

Vancouver:

Telecky AJ. Photoresist and ion-exchange chemistry of HafSOx. [Internet] [Doctoral dissertation]. Oregon State University; 2012. [cited 2020 Aug 12]. Available from: http://hdl.handle.net/1957/29732.

Council of Science Editors:

Telecky AJ. Photoresist and ion-exchange chemistry of HafSOx. [Doctoral Dissertation]. Oregon State University; 2012. Available from: http://hdl.handle.net/1957/29732


RMIT University

6. Murdoch, B. Energetic deposition of dielectric metal oxide coatings.

Degree: 2016, RMIT University

 This thesis examines the optical and electronic properties of wide-bandgap metal oxides grown using energetic deposition methods. The films have also been incorporated in metal/oxide/metal… (more)

Subjects/Keywords: Fields of Research; dielectric; thin film; hafnium oxide; memristor; neuromorphic

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APA (6th Edition):

Murdoch, B. (2016). Energetic deposition of dielectric metal oxide coatings. (Thesis). RMIT University. Retrieved from http://researchbank.rmit.edu.au/view/rmit:161669

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Murdoch, B. “Energetic deposition of dielectric metal oxide coatings.” 2016. Thesis, RMIT University. Accessed August 12, 2020. http://researchbank.rmit.edu.au/view/rmit:161669.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Murdoch, B. “Energetic deposition of dielectric metal oxide coatings.” 2016. Web. 12 Aug 2020.

Vancouver:

Murdoch B. Energetic deposition of dielectric metal oxide coatings. [Internet] [Thesis]. RMIT University; 2016. [cited 2020 Aug 12]. Available from: http://researchbank.rmit.edu.au/view/rmit:161669.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Murdoch B. Energetic deposition of dielectric metal oxide coatings. [Thesis]. RMIT University; 2016. Available from: http://researchbank.rmit.edu.au/view/rmit:161669

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

7. Lin, Hong-yang. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.

Degree: Master, Materials and Optoelectronic Science, 2013, NSYSU

 Resistive Random Access Memory (RRAM) is considered as one of the most promising candidate for the next-generation memories due to their excellent properties such as… (more)

Subjects/Keywords: Hafnium Oxide; RRAM; Concentration of Oxygen; Nernst Equation; Energy Dissipation Rate

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APA (6th Edition):

Lin, H. (2013). Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Hong-yang. “Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.” 2013. Thesis, NSYSU. Accessed August 12, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Hong-yang. “Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.” 2013. Web. 12 Aug 2020.

Vancouver:

Lin H. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. [Internet] [Thesis]. NSYSU; 2013. [cited 2020 Aug 12]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin H. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

8. Ng, Kit Ling. Current transport mechanism of hafnium oxide films prepared by direct sputtering.

Degree: 2003, Hong Kong University of Science and Technology

 The downscaling of MOSFET devices to improve the packing density and device performance has faced a lot of challenges. Within a decade, an ultra-thin gate… (more)

Subjects/Keywords: Hafnium oxide ; Thin films

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APA (6th Edition):

Ng, K. L. (2003). Current transport mechanism of hafnium oxide films prepared by direct sputtering. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-4680 ; https://doi.org/10.14711/thesis-b807458 ; http://repository.ust.hk/ir/bitstream/1783.1-4680/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ng, Kit Ling. “Current transport mechanism of hafnium oxide films prepared by direct sputtering.” 2003. Thesis, Hong Kong University of Science and Technology. Accessed August 12, 2020. http://repository.ust.hk/ir/Record/1783.1-4680 ; https://doi.org/10.14711/thesis-b807458 ; http://repository.ust.hk/ir/bitstream/1783.1-4680/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ng, Kit Ling. “Current transport mechanism of hafnium oxide films prepared by direct sputtering.” 2003. Web. 12 Aug 2020.

Vancouver:

Ng KL. Current transport mechanism of hafnium oxide films prepared by direct sputtering. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2003. [cited 2020 Aug 12]. Available from: http://repository.ust.hk/ir/Record/1783.1-4680 ; https://doi.org/10.14711/thesis-b807458 ; http://repository.ust.hk/ir/bitstream/1783.1-4680/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ng KL. Current transport mechanism of hafnium oxide films prepared by direct sputtering. [Thesis]. Hong Kong University of Science and Technology; 2003. Available from: http://repository.ust.hk/ir/Record/1783.1-4680 ; https://doi.org/10.14711/thesis-b807458 ; http://repository.ust.hk/ir/bitstream/1783.1-4680/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New Mexico

9. Branch, Brittany. MICROELECTRODE ARRAY FOR CAPACITIVE TRANSDUCTION OF RETINAL RESPONSES.

Degree: Nanoscience and Microsystems, 2014, University of New Mexico

 Neural degenerative diseases and traumatic injuries to the eye affect millions of people worldwide, motivating the development of neural prosthetic interfaces to restore sensory or… (more)

Subjects/Keywords: Retina; Microfabrication; Capacitive Sensing; Hafnium Oxide; Microelectrode Array

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APA (6th Edition):

Branch, B. (2014). MICROELECTRODE ARRAY FOR CAPACITIVE TRANSDUCTION OF RETINAL RESPONSES. (Doctoral Dissertation). University of New Mexico. Retrieved from http://hdl.handle.net/1928/23538

Chicago Manual of Style (16th Edition):

Branch, Brittany. “MICROELECTRODE ARRAY FOR CAPACITIVE TRANSDUCTION OF RETINAL RESPONSES.” 2014. Doctoral Dissertation, University of New Mexico. Accessed August 12, 2020. http://hdl.handle.net/1928/23538.

MLA Handbook (7th Edition):

Branch, Brittany. “MICROELECTRODE ARRAY FOR CAPACITIVE TRANSDUCTION OF RETINAL RESPONSES.” 2014. Web. 12 Aug 2020.

Vancouver:

Branch B. MICROELECTRODE ARRAY FOR CAPACITIVE TRANSDUCTION OF RETINAL RESPONSES. [Internet] [Doctoral dissertation]. University of New Mexico; 2014. [cited 2020 Aug 12]. Available from: http://hdl.handle.net/1928/23538.

Council of Science Editors:

Branch B. MICROELECTRODE ARRAY FOR CAPACITIVE TRANSDUCTION OF RETINAL RESPONSES. [Doctoral Dissertation]. University of New Mexico; 2014. Available from: http://hdl.handle.net/1928/23538


University of Dayton

10. DeCerbo, Jennifer N. Development and Characterization of Layered, Nitrogen-Doped Hafnium Oxide and Aluminum Oxide Films for Use as Wide Temperature Capacitor Dielectrics.

Degree: PhD, Materials Engineering, 2015, University of Dayton

 Single and multilayer films of nitrogen-doped hafnium oxide and aluminum oxide were fabricated up to 1 µm thick using pulsed DC reactive magnetron sputtering. The… (more)

Subjects/Keywords: Materials Science; wide temperature dielectric, aluminum oxide, hafnium oxide, layered dielectric, capacitor

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APA (6th Edition):

DeCerbo, J. N. (2015). Development and Characterization of Layered, Nitrogen-Doped Hafnium Oxide and Aluminum Oxide Films for Use as Wide Temperature Capacitor Dielectrics. (Doctoral Dissertation). University of Dayton. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=dayton1429979783

Chicago Manual of Style (16th Edition):

DeCerbo, Jennifer N. “Development and Characterization of Layered, Nitrogen-Doped Hafnium Oxide and Aluminum Oxide Films for Use as Wide Temperature Capacitor Dielectrics.” 2015. Doctoral Dissertation, University of Dayton. Accessed August 12, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1429979783.

MLA Handbook (7th Edition):

DeCerbo, Jennifer N. “Development and Characterization of Layered, Nitrogen-Doped Hafnium Oxide and Aluminum Oxide Films for Use as Wide Temperature Capacitor Dielectrics.” 2015. Web. 12 Aug 2020.

Vancouver:

DeCerbo JN. Development and Characterization of Layered, Nitrogen-Doped Hafnium Oxide and Aluminum Oxide Films for Use as Wide Temperature Capacitor Dielectrics. [Internet] [Doctoral dissertation]. University of Dayton; 2015. [cited 2020 Aug 12]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=dayton1429979783.

Council of Science Editors:

DeCerbo JN. Development and Characterization of Layered, Nitrogen-Doped Hafnium Oxide and Aluminum Oxide Films for Use as Wide Temperature Capacitor Dielectrics. [Doctoral Dissertation]. University of Dayton; 2015. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=dayton1429979783


North Carolina State University

11. Lee, Sanghyun. Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application.

Degree: PhD, Electrical Engineering, 2007, North Carolina State University

Subjects/Keywords: HAFNIUM OXIDE; TITANIUM OXIDE; HAFNIUM SILICON OXYNITRIDE; CMOS; HIGH K; GATE DIELECTRICS

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APA (6th Edition):

Lee, S. (2007). Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5251

Chicago Manual of Style (16th Edition):

Lee, Sanghyun. “Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application.” 2007. Doctoral Dissertation, North Carolina State University. Accessed August 12, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5251.

MLA Handbook (7th Edition):

Lee, Sanghyun. “Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application.” 2007. Web. 12 Aug 2020.

Vancouver:

Lee S. Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application. [Internet] [Doctoral dissertation]. North Carolina State University; 2007. [cited 2020 Aug 12]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5251.

Council of Science Editors:

Lee S. Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application. [Doctoral Dissertation]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5251


NSYSU

12. Chen, Po-Hsun. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.

Degree: PhD, Physics, 2018, NSYSU

 With the advent of advanced technologies such as the Internet of Things (IoT), artificial intelligence (AI), and cloud computing, huge amounts of data are continuously… (more)

Subjects/Keywords: Resistance Switching (RS); Indium Tin Oxide (ITO); Resistive Random Access Memory (RRAM); Hafnium Dioxide (HfO2)

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APA (6th Edition):

Chen, P. (2018). Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038

Chicago Manual of Style (16th Edition):

Chen, Po-Hsun. “Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.” 2018. Doctoral Dissertation, NSYSU. Accessed August 12, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038.

MLA Handbook (7th Edition):

Chen, Po-Hsun. “Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.” 2018. Web. 12 Aug 2020.

Vancouver:

Chen P. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. [Internet] [Doctoral dissertation]. NSYSU; 2018. [cited 2020 Aug 12]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038.

Council of Science Editors:

Chen P. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. [Doctoral Dissertation]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038


North Carolina State University

13. Lin, Yanxia. Advanced Gate Stacks for Strained Si Devices.

Degree: PhD, Electrical Engineering, 2005, North Carolina State University

 Due to the mobility enhancement provided by strained Si for both electrons and holes, as well as the scaling requirement and potential issues of polysilicon… (more)

Subjects/Keywords: Hafnium oxide; mobility; metal gate electrode

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APA (6th Edition):

Lin, Y. (2005). Advanced Gate Stacks for Strained Si Devices. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3730

Chicago Manual of Style (16th Edition):

Lin, Yanxia. “Advanced Gate Stacks for Strained Si Devices.” 2005. Doctoral Dissertation, North Carolina State University. Accessed August 12, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3730.

MLA Handbook (7th Edition):

Lin, Yanxia. “Advanced Gate Stacks for Strained Si Devices.” 2005. Web. 12 Aug 2020.

Vancouver:

Lin Y. Advanced Gate Stacks for Strained Si Devices. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Aug 12]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3730.

Council of Science Editors:

Lin Y. Advanced Gate Stacks for Strained Si Devices. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3730


NSYSU

14. Huang, Kuan-Chi. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.

Degree: Master, Physics, 2014, NSYSU

 In order to clarify the mechanism of reset process in Ti/HfO2/TiN resistive random access memory (RRAM) devices, constant voltage sampling measurements are carried out at… (more)

Subjects/Keywords: complementary resistive switches; indium tin oxide; activation energy; hafnium; resistive random access memory

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APA (6th Edition):

Huang, K. (2014). Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Thesis, NSYSU. Accessed August 12, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Web. 12 Aug 2020.

Vancouver:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Internet] [Thesis]. NSYSU; 2014. [cited 2020 Aug 12]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

15. Lou, Jyun-Hao. Study of Resistance Switching Physical Mechanism in Hafnium Oxide Thin Film for Resistive Random Access Memory.

Degree: Master, Physics, 2012, NSYSU

 This study is focuses on the resistance switching physical mechanism in hafnium oxide (HfO2) of resistive random access memory (RRAM). HfO2 was taken as the… (more)

Subjects/Keywords: Non-volatile memory (NVM); RRAM; Hafnium oxide; Carrier transport mechanism; Resistance switching

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APA (6th Edition):

Lou, J. (2012). Study of Resistance Switching Physical Mechanism in Hafnium Oxide Thin Film for Resistive Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714112-162455

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lou, Jyun-Hao. “Study of Resistance Switching Physical Mechanism in Hafnium Oxide Thin Film for Resistive Random Access Memory.” 2012. Thesis, NSYSU. Accessed August 12, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714112-162455.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lou, Jyun-Hao. “Study of Resistance Switching Physical Mechanism in Hafnium Oxide Thin Film for Resistive Random Access Memory.” 2012. Web. 12 Aug 2020.

Vancouver:

Lou J. Study of Resistance Switching Physical Mechanism in Hafnium Oxide Thin Film for Resistive Random Access Memory. [Internet] [Thesis]. NSYSU; 2012. [cited 2020 Aug 12]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714112-162455.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lou J. Study of Resistance Switching Physical Mechanism in Hafnium Oxide Thin Film for Resistive Random Access Memory. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714112-162455

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Michigan Technological University

16. Collins, Jeana. REVERSE INSULATOR DIELECTROPHORESIS: UTILIZING DROPLET MICROENVIRONMENTS FOR DISCERNING MOLECULAR EXPRESSIONS ON CELL SURFACES.

Degree: PhD, Department of Chemical Engineering, 2018, Michigan Technological University

  Lab-on-a-chip (LOC) technologies enable the development of portable analysis devices that use small sample and reagent volumes, allow for multiple unit operations, and couple… (more)

Subjects/Keywords: droplet microfluidics; Lab-on-a-chip; dielectrophoresis; interfacial tension; microfabrication; hafnium oxide; Other Chemical Engineering

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APA (6th Edition):

Collins, J. (2018). REVERSE INSULATOR DIELECTROPHORESIS: UTILIZING DROPLET MICROENVIRONMENTS FOR DISCERNING MOLECULAR EXPRESSIONS ON CELL SURFACES. (Doctoral Dissertation). Michigan Technological University. Retrieved from https://digitalcommons.mtu.edu/etdr/655

Chicago Manual of Style (16th Edition):

Collins, Jeana. “REVERSE INSULATOR DIELECTROPHORESIS: UTILIZING DROPLET MICROENVIRONMENTS FOR DISCERNING MOLECULAR EXPRESSIONS ON CELL SURFACES.” 2018. Doctoral Dissertation, Michigan Technological University. Accessed August 12, 2020. https://digitalcommons.mtu.edu/etdr/655.

MLA Handbook (7th Edition):

Collins, Jeana. “REVERSE INSULATOR DIELECTROPHORESIS: UTILIZING DROPLET MICROENVIRONMENTS FOR DISCERNING MOLECULAR EXPRESSIONS ON CELL SURFACES.” 2018. Web. 12 Aug 2020.

Vancouver:

Collins J. REVERSE INSULATOR DIELECTROPHORESIS: UTILIZING DROPLET MICROENVIRONMENTS FOR DISCERNING MOLECULAR EXPRESSIONS ON CELL SURFACES. [Internet] [Doctoral dissertation]. Michigan Technological University; 2018. [cited 2020 Aug 12]. Available from: https://digitalcommons.mtu.edu/etdr/655.

Council of Science Editors:

Collins J. REVERSE INSULATOR DIELECTROPHORESIS: UTILIZING DROPLET MICROENVIRONMENTS FOR DISCERNING MOLECULAR EXPRESSIONS ON CELL SURFACES. [Doctoral Dissertation]. Michigan Technological University; 2018. Available from: https://digitalcommons.mtu.edu/etdr/655


Duke University

17. McGuire, Felicia Ann. Two-dimensional molybdenum disulfide negative capacitance field-effect transistors .

Degree: 2018, Duke University

  Essential to metal-oxide-semiconductor field-effect transistor (MOSFET) scaling is the reduction of the supply voltage to mitigate the power consumption and corresponding heat dissipation. Conventional… (more)

Subjects/Keywords: Nanotechnology; Electrical engineering; Materials Science; 2D; Ferroelectric; Hafnium Zirconium Oxide; HZO; MoS2; Negative Capacitance

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APA (6th Edition):

McGuire, F. A. (2018). Two-dimensional molybdenum disulfide negative capacitance field-effect transistors . (Thesis). Duke University. Retrieved from http://hdl.handle.net/10161/16831

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

McGuire, Felicia Ann. “Two-dimensional molybdenum disulfide negative capacitance field-effect transistors .” 2018. Thesis, Duke University. Accessed August 12, 2020. http://hdl.handle.net/10161/16831.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

McGuire, Felicia Ann. “Two-dimensional molybdenum disulfide negative capacitance field-effect transistors .” 2018. Web. 12 Aug 2020.

Vancouver:

McGuire FA. Two-dimensional molybdenum disulfide negative capacitance field-effect transistors . [Internet] [Thesis]. Duke University; 2018. [cited 2020 Aug 12]. Available from: http://hdl.handle.net/10161/16831.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

McGuire FA. Two-dimensional molybdenum disulfide negative capacitance field-effect transistors . [Thesis]. Duke University; 2018. Available from: http://hdl.handle.net/10161/16831

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Texas – Austin

18. Park, Hyun Jung. Interfacial properties of thin film hetero-structure: copper-oxides of hafnium-silicon.

Degree: PhD, Materials Science and Engineering, 2002, University of Texas – Austin

 This dissertation focuses on the properties of Cu / high-k oxide and high-k / Si (100) interfaces using surface analysis tools such as X-ray photoelectron… (more)

Subjects/Keywords: Thin films – Electric properties; Hafnium oxide; Silicon oxide films

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APA (6th Edition):

Park, H. J. (2002). Interfacial properties of thin film hetero-structure: copper-oxides of hafnium-silicon. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/836

Chicago Manual of Style (16th Edition):

Park, Hyun Jung. “Interfacial properties of thin film hetero-structure: copper-oxides of hafnium-silicon.” 2002. Doctoral Dissertation, University of Texas – Austin. Accessed August 12, 2020. http://hdl.handle.net/2152/836.

MLA Handbook (7th Edition):

Park, Hyun Jung. “Interfacial properties of thin film hetero-structure: copper-oxides of hafnium-silicon.” 2002. Web. 12 Aug 2020.

Vancouver:

Park HJ. Interfacial properties of thin film hetero-structure: copper-oxides of hafnium-silicon. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2002. [cited 2020 Aug 12]. Available from: http://hdl.handle.net/2152/836.

Council of Science Editors:

Park HJ. Interfacial properties of thin film hetero-structure: copper-oxides of hafnium-silicon. [Doctoral Dissertation]. University of Texas – Austin; 2002. Available from: http://hdl.handle.net/2152/836


Hong Kong University of Science and Technology

19. Zhan, Nian. Fabrication and characterization of hafnium oxide films prepared by direct sputtering.

Degree: 2003, Hong Kong University of Science and Technology

 Having a high dielectric constant and potential to form device-grade interface to silicon, hafnium oxide (Hf02) is considered as the promising potential substitute for Si02… (more)

Subjects/Keywords: Silicon oxide films ; Silicon-on-insulator technology ; Hafnium oxide

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APA (6th Edition):

Zhan, N. (2003). Fabrication and characterization of hafnium oxide films prepared by direct sputtering. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-4664 ; https://doi.org/10.14711/thesis-b796755 ; http://repository.ust.hk/ir/bitstream/1783.1-4664/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhan, Nian. “Fabrication and characterization of hafnium oxide films prepared by direct sputtering.” 2003. Thesis, Hong Kong University of Science and Technology. Accessed August 12, 2020. http://repository.ust.hk/ir/Record/1783.1-4664 ; https://doi.org/10.14711/thesis-b796755 ; http://repository.ust.hk/ir/bitstream/1783.1-4664/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhan, Nian. “Fabrication and characterization of hafnium oxide films prepared by direct sputtering.” 2003. Web. 12 Aug 2020.

Vancouver:

Zhan N. Fabrication and characterization of hafnium oxide films prepared by direct sputtering. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2003. [cited 2020 Aug 12]. Available from: http://repository.ust.hk/ir/Record/1783.1-4664 ; https://doi.org/10.14711/thesis-b796755 ; http://repository.ust.hk/ir/bitstream/1783.1-4664/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhan N. Fabrication and characterization of hafnium oxide films prepared by direct sputtering. [Thesis]. Hong Kong University of Science and Technology; 2003. Available from: http://repository.ust.hk/ir/Record/1783.1-4664 ; https://doi.org/10.14711/thesis-b796755 ; http://repository.ust.hk/ir/bitstream/1783.1-4664/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Maine

20. Yang, Fan. Characterization of HFO2 Capacitors.

Degree: MSEE, Electrical Engineering, 2003, University of Maine

Hafnium oxide (HfOn) is a promising dielectric for future microelectronic applications. Hf02 thin films (10-75nm) were deposited on Pt/Si02/Si substrates by pulsed DC magnetron… (more)

Subjects/Keywords: Capacitors; Dielectrics; Hafnium oxide; Electrical and Computer Engineering

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APA (6th Edition):

Yang, F. (2003). Characterization of HFO2 Capacitors. (Masters Thesis). University of Maine. Retrieved from https://digitalcommons.library.umaine.edu/etd/254

Chicago Manual of Style (16th Edition):

Yang, Fan. “Characterization of HFO2 Capacitors.” 2003. Masters Thesis, University of Maine. Accessed August 12, 2020. https://digitalcommons.library.umaine.edu/etd/254.

MLA Handbook (7th Edition):

Yang, Fan. “Characterization of HFO2 Capacitors.” 2003. Web. 12 Aug 2020.

Vancouver:

Yang F. Characterization of HFO2 Capacitors. [Internet] [Masters thesis]. University of Maine; 2003. [cited 2020 Aug 12]. Available from: https://digitalcommons.library.umaine.edu/etd/254.

Council of Science Editors:

Yang F. Characterization of HFO2 Capacitors. [Masters Thesis]. University of Maine; 2003. Available from: https://digitalcommons.library.umaine.edu/etd/254

21. Lin, Chen-Han. Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films.

Degree: PhD, Materials Science and Engineering, 2012, Texas A&M University

 Nanocrystals embedded zirconium-doped hafnium oxide (ZrHfO) high-k gate dielectric films have been studied for the applications of the future metal oxide semiconductor field effect transistor… (more)

Subjects/Keywords: High-k; Hafnium Oxide; Nonvolatile; Memory; MOSFET

…MODIFIED ZIRCONIUM-DOPED HAFNIUM OXIDE HIGH-K GATE DIELECTRIC FILM WITH LOW EQUILVALENT OXIDE… …RUTHENIUM OXIDE EMBEDDED ZIRCONIUM-DOPED HAFNIUM OXIDE HIGH-K NONVOLATILE MEMORIES… …Fig. 2, both hafnium oxide (HfO2) and zirconium oxide (ZrO2) films are… …TIN OXIDE AND ZINC OXIDE EMBEDDED ZrHfO HIGH-K NONVOLATILE MEMORIES… …ncconductive oxide candidates: nc-RuO, nc-ITO, and nc-ZnO …. 125 Fitted equations for long-term… 

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APA (6th Edition):

Lin, C. (2012). Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-9884

Chicago Manual of Style (16th Edition):

Lin, Chen-Han. “Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films.” 2012. Doctoral Dissertation, Texas A&M University. Accessed August 12, 2020. http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-9884.

MLA Handbook (7th Edition):

Lin, Chen-Han. “Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films.” 2012. Web. 12 Aug 2020.

Vancouver:

Lin C. Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films. [Internet] [Doctoral dissertation]. Texas A&M University; 2012. [cited 2020 Aug 12]. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-9884.

Council of Science Editors:

Lin C. Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films. [Doctoral Dissertation]. Texas A&M University; 2012. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-9884


North Carolina State University

22. Long, Joseph Preston. Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces.

Degree: PhD, Physics, 2008, North Carolina State University

 The research discussed here has been carried out in order to advance the basic understanding of the compatibility between germanium surfaces and hafnium-based high κ… (more)

Subjects/Keywords: high-k; germanium; hafnium oxide; CMOS; PECVD

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APA (6th Edition):

Long, J. P. (2008). Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3194

Chicago Manual of Style (16th Edition):

Long, Joseph Preston. “Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces.” 2008. Doctoral Dissertation, North Carolina State University. Accessed August 12, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3194.

MLA Handbook (7th Edition):

Long, Joseph Preston. “Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces.” 2008. Web. 12 Aug 2020.

Vancouver:

Long JP. Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2020 Aug 12]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3194.

Council of Science Editors:

Long JP. Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3194

23. MEGHA CHADHA. STUDY OF CO - HFO2 GRANULAR FILMS DEPOSITED BY SEQUENTIAL SPUTTERING.

Degree: 2011, National University of Singapore

Subjects/Keywords: Granular films; Magntetoresistance; Sequential Sputtering; Superparamagnetism; Cobalt; Hafnium oxide

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APA (6th Edition):

CHADHA, M. (2011). STUDY OF CO - HFO2 GRANULAR FILMS DEPOSITED BY SEQUENTIAL SPUTTERING. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/34455

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

CHADHA, MEGHA. “STUDY OF CO - HFO2 GRANULAR FILMS DEPOSITED BY SEQUENTIAL SPUTTERING.” 2011. Thesis, National University of Singapore. Accessed August 12, 2020. http://scholarbank.nus.edu.sg/handle/10635/34455.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

CHADHA, MEGHA. “STUDY OF CO - HFO2 GRANULAR FILMS DEPOSITED BY SEQUENTIAL SPUTTERING.” 2011. Web. 12 Aug 2020.

Vancouver:

CHADHA M. STUDY OF CO - HFO2 GRANULAR FILMS DEPOSITED BY SEQUENTIAL SPUTTERING. [Internet] [Thesis]. National University of Singapore; 2011. [cited 2020 Aug 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/34455.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

CHADHA M. STUDY OF CO - HFO2 GRANULAR FILMS DEPOSITED BY SEQUENTIAL SPUTTERING. [Thesis]. National University of Singapore; 2011. Available from: http://scholarbank.nus.edu.sg/handle/10635/34455

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New South Wales

24. Zhang, Qiuyang. Energy selective contacts based on double-barrier tunnelling structures for hot carrier solar cells.

Degree: Photovoltaics & Renewable Energy Engineering, 2018, University of New South Wales

 The hot carrier solar (HCSC) is an innovative concept of photovoltaics device that has the potential to surpass the Shockley-Queisser efficiency limit. To achieve high… (more)

Subjects/Keywords: Double-barrier tunnelling structures; Hot carrier solar cell; Energy selective contacts; Hafnium oxide; Germanium quantum well

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APA (6th Edition):

Zhang, Q. (2018). Energy selective contacts based on double-barrier tunnelling structures for hot carrier solar cells. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/60322

Chicago Manual of Style (16th Edition):

Zhang, Qiuyang. “Energy selective contacts based on double-barrier tunnelling structures for hot carrier solar cells.” 2018. Doctoral Dissertation, University of New South Wales. Accessed August 12, 2020. http://handle.unsw.edu.au/1959.4/60322.

MLA Handbook (7th Edition):

Zhang, Qiuyang. “Energy selective contacts based on double-barrier tunnelling structures for hot carrier solar cells.” 2018. Web. 12 Aug 2020.

Vancouver:

Zhang Q. Energy selective contacts based on double-barrier tunnelling structures for hot carrier solar cells. [Internet] [Doctoral dissertation]. University of New South Wales; 2018. [cited 2020 Aug 12]. Available from: http://handle.unsw.edu.au/1959.4/60322.

Council of Science Editors:

Zhang Q. Energy selective contacts based on double-barrier tunnelling structures for hot carrier solar cells. [Doctoral Dissertation]. University of New South Wales; 2018. Available from: http://handle.unsw.edu.au/1959.4/60322


Texas State University – San Marcos

25. Cain, Heather M. Optical Properties of Athermally and Thermally Annealed Hafnium Oxide Thin Films on Silicon.

Degree: MS, Physics, 2003, Texas State University – San Marcos

No abstract prepared.

Subjects/Keywords: Thin films; Hafnium oxide; Silicon; Optical properties

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APA (6th Edition):

Cain, H. M. (2003). Optical Properties of Athermally and Thermally Annealed Hafnium Oxide Thin Films on Silicon. (Masters Thesis). Texas State University – San Marcos. Retrieved from https://digital.library.txstate.edu/handle/10877/9530

Chicago Manual of Style (16th Edition):

Cain, Heather M. “Optical Properties of Athermally and Thermally Annealed Hafnium Oxide Thin Films on Silicon.” 2003. Masters Thesis, Texas State University – San Marcos. Accessed August 12, 2020. https://digital.library.txstate.edu/handle/10877/9530.

MLA Handbook (7th Edition):

Cain, Heather M. “Optical Properties of Athermally and Thermally Annealed Hafnium Oxide Thin Films on Silicon.” 2003. Web. 12 Aug 2020.

Vancouver:

Cain HM. Optical Properties of Athermally and Thermally Annealed Hafnium Oxide Thin Films on Silicon. [Internet] [Masters thesis]. Texas State University – San Marcos; 2003. [cited 2020 Aug 12]. Available from: https://digital.library.txstate.edu/handle/10877/9530.

Council of Science Editors:

Cain HM. Optical Properties of Athermally and Thermally Annealed Hafnium Oxide Thin Films on Silicon. [Masters Thesis]. Texas State University – San Marcos; 2003. Available from: https://digital.library.txstate.edu/handle/10877/9530


North Carolina State University

26. Hinkle, Christopher. Fixed Charge Reduction and Tunneling in Stacked Dielectrics.

Degree: PhD, Physics, 2005, North Carolina State University

 Stacked gate dielectrics using high-k materials were deposited using a RPECVD method. Aluminum oxide, hafnium oxide, hafnium silicate, nitrided films of each of the above,… (more)

Subjects/Keywords: aluminum oxide; stacked dielectrics; hafnium oxide; high-k; fixed charge; tunneling

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APA (6th Edition):

Hinkle, C. (2005). Fixed Charge Reduction and Tunneling in Stacked Dielectrics. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5623

Chicago Manual of Style (16th Edition):

Hinkle, Christopher. “Fixed Charge Reduction and Tunneling in Stacked Dielectrics.” 2005. Doctoral Dissertation, North Carolina State University. Accessed August 12, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5623.

MLA Handbook (7th Edition):

Hinkle, Christopher. “Fixed Charge Reduction and Tunneling in Stacked Dielectrics.” 2005. Web. 12 Aug 2020.

Vancouver:

Hinkle C. Fixed Charge Reduction and Tunneling in Stacked Dielectrics. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Aug 12]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5623.

Council of Science Editors:

Hinkle C. Fixed Charge Reduction and Tunneling in Stacked Dielectrics. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5623


Vanderbilt University

27. Schmidt, Benjamin W. Fabrication and Characterization of Metal Oxycarbide Thin Films.

Degree: PhD, Chemical Engineering, 2010, Vanderbilt University

 Ceramic materials in the Al-O-C and Hf-O-C systems were fabricated for electrical or thermal protection applications. AlOxCy films were produced via high-vacuum chemical vapor deposition… (more)

Subjects/Keywords: x-ray photoelectron spectroscopy; precursor; hafnium oxide; aluminum oxide; chemical vapor deposition

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APA (6th Edition):

Schmidt, B. W. (2010). Fabrication and Characterization of Metal Oxycarbide Thin Films. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-02012010-124544/ ;

Chicago Manual of Style (16th Edition):

Schmidt, Benjamin W. “Fabrication and Characterization of Metal Oxycarbide Thin Films.” 2010. Doctoral Dissertation, Vanderbilt University. Accessed August 12, 2020. http://etd.library.vanderbilt.edu/available/etd-02012010-124544/ ;.

MLA Handbook (7th Edition):

Schmidt, Benjamin W. “Fabrication and Characterization of Metal Oxycarbide Thin Films.” 2010. Web. 12 Aug 2020.

Vancouver:

Schmidt BW. Fabrication and Characterization of Metal Oxycarbide Thin Films. [Internet] [Doctoral dissertation]. Vanderbilt University; 2010. [cited 2020 Aug 12]. Available from: http://etd.library.vanderbilt.edu/available/etd-02012010-124544/ ;.

Council of Science Editors:

Schmidt BW. Fabrication and Characterization of Metal Oxycarbide Thin Films. [Doctoral Dissertation]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-02012010-124544/ ;


Australian National University

28. Eom, Namsoon. Surface Force Measurement between Atomic Layer Deposition Prepared Hafnia Surfaces .

Degree: 2017, Australian National University

 Surface forces play a fundamental role in colloidal systems as they control the stability, adhesion, friction and rheology of colloids. Information on all of these… (more)

Subjects/Keywords: Surface forces; colloidal systems; DLVO theory; hafnium oxide; surface roughness; hydrophobic force; carboxylic acids; citric acid; atomic layer deposition(ALD); atomic force microscopy (AFM)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Eom, N. (2017). Surface Force Measurement between Atomic Layer Deposition Prepared Hafnia Surfaces . (Thesis). Australian National University. Retrieved from http://hdl.handle.net/1885/142990

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Eom, Namsoon. “Surface Force Measurement between Atomic Layer Deposition Prepared Hafnia Surfaces .” 2017. Thesis, Australian National University. Accessed August 12, 2020. http://hdl.handle.net/1885/142990.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Eom, Namsoon. “Surface Force Measurement between Atomic Layer Deposition Prepared Hafnia Surfaces .” 2017. Web. 12 Aug 2020.

Vancouver:

Eom N. Surface Force Measurement between Atomic Layer Deposition Prepared Hafnia Surfaces . [Internet] [Thesis]. Australian National University; 2017. [cited 2020 Aug 12]. Available from: http://hdl.handle.net/1885/142990.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Eom N. Surface Force Measurement between Atomic Layer Deposition Prepared Hafnia Surfaces . [Thesis]. Australian National University; 2017. Available from: http://hdl.handle.net/1885/142990

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

29. ZHENG FEI. Synthesis and stress analysis of germanium nanocrystals embedded in dielectric matrices.

Degree: 2009, National University of Singapore

Subjects/Keywords: nanocrystalline germanium; germanium diffusion; hydrogen reduction; hafnium aluminum oxide; stress analysis; quantum dot

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

FEI, Z. (2009). Synthesis and stress analysis of germanium nanocrystals embedded in dielectric matrices. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/15797

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

FEI, ZHENG. “Synthesis and stress analysis of germanium nanocrystals embedded in dielectric matrices.” 2009. Thesis, National University of Singapore. Accessed August 12, 2020. http://scholarbank.nus.edu.sg/handle/10635/15797.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

FEI, ZHENG. “Synthesis and stress analysis of germanium nanocrystals embedded in dielectric matrices.” 2009. Web. 12 Aug 2020.

Vancouver:

FEI Z. Synthesis and stress analysis of germanium nanocrystals embedded in dielectric matrices. [Internet] [Thesis]. National University of Singapore; 2009. [cited 2020 Aug 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/15797.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

FEI Z. Synthesis and stress analysis of germanium nanocrystals embedded in dielectric matrices. [Thesis]. National University of Singapore; 2009. Available from: http://scholarbank.nus.edu.sg/handle/10635/15797

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Iowa State University

30. Buckley, John Dennis. Stabilization of the phase transformations in hafnium oxide.

Degree: 1968, Iowa State University

Subjects/Keywords: Hafnium oxide; Refractory materials; Chemical engineering; Ceramic engineering; Chemical Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Buckley, J. D. (1968). Stabilization of the phase transformations in hafnium oxide. (Thesis). Iowa State University. Retrieved from https://lib.dr.iastate.edu/rtd/3650

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Buckley, John Dennis. “Stabilization of the phase transformations in hafnium oxide.” 1968. Thesis, Iowa State University. Accessed August 12, 2020. https://lib.dr.iastate.edu/rtd/3650.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Buckley, John Dennis. “Stabilization of the phase transformations in hafnium oxide.” 1968. Web. 12 Aug 2020.

Vancouver:

Buckley JD. Stabilization of the phase transformations in hafnium oxide. [Internet] [Thesis]. Iowa State University; 1968. [cited 2020 Aug 12]. Available from: https://lib.dr.iastate.edu/rtd/3650.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Buckley JD. Stabilization of the phase transformations in hafnium oxide. [Thesis]. Iowa State University; 1968. Available from: https://lib.dr.iastate.edu/rtd/3650

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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