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You searched for subject:(gettering). Showing records 1 – 15 of 15 total matches.

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1. Savin, Hele. Controlling Iron and Copper Precipitation in Silicon Wafers.

Degree: 2005, Helsinki University of Technology

This thesis studies the two most common transition metals in silicon – copper and iron. The purpose of the experiments and theoretical calculations presented in… (more)

Subjects/Keywords: photoconductivity decay; recombination lifetime; epitaxial; internal gettering; oxide precipitates

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APA (6th Edition):

Savin, H. (2005). Controlling Iron and Copper Precipitation in Silicon Wafers. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2005/isbn9512278731/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Savin, Hele. “Controlling Iron and Copper Precipitation in Silicon Wafers.” 2005. Thesis, Helsinki University of Technology. Accessed April 20, 2021. http://lib.tkk.fi/Diss/2005/isbn9512278731/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Savin, Hele. “Controlling Iron and Copper Precipitation in Silicon Wafers.” 2005. Web. 20 Apr 2021.

Vancouver:

Savin H. Controlling Iron and Copper Precipitation in Silicon Wafers. [Internet] [Thesis]. Helsinki University of Technology; 2005. [cited 2021 Apr 20]. Available from: http://lib.tkk.fi/Diss/2005/isbn9512278731/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Savin H. Controlling Iron and Copper Precipitation in Silicon Wafers. [Thesis]. Helsinki University of Technology; 2005. Available from: http://lib.tkk.fi/Diss/2005/isbn9512278731/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

2. Will, James ii. Development and evaluation of an intrinsic gettering process for fabrication of integrated circuits.

Degree: Center for Materials Science and Engineering, 2000, Rochester Institute of Technology

 An internal gettering process to collect and trap potentially harmful defects in the bulk of the silicon wafer, away from the surface where the integrated… (more)

Subjects/Keywords: Gettering; Material science; Wafers

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APA (6th Edition):

Will, J. i. (2000). Development and evaluation of an intrinsic gettering process for fabrication of integrated circuits. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/2765

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Will, James ii. “Development and evaluation of an intrinsic gettering process for fabrication of integrated circuits.” 2000. Thesis, Rochester Institute of Technology. Accessed April 20, 2021. https://scholarworks.rit.edu/theses/2765.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Will, James ii. “Development and evaluation of an intrinsic gettering process for fabrication of integrated circuits.” 2000. Web. 20 Apr 2021.

Vancouver:

Will Ji. Development and evaluation of an intrinsic gettering process for fabrication of integrated circuits. [Internet] [Thesis]. Rochester Institute of Technology; 2000. [cited 2021 Apr 20]. Available from: https://scholarworks.rit.edu/theses/2765.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Will Ji. Development and evaluation of an intrinsic gettering process for fabrication of integrated circuits. [Thesis]. Rochester Institute of Technology; 2000. Available from: https://scholarworks.rit.edu/theses/2765

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

3. Haarahiltunen, Antti. Heterogeneous Precipitation and Internal Gettering Efficiency of Iron in Silicon.

Degree: 2007, Helsinki University of Technology

In this thesis the heterogeneous iron precipitation was studied in silicon using oxide precipitates and related defects as precipitation sites. The motivation of the theoretical… (more)

Subjects/Keywords: silicon; iron; internal gettering; precipitation; oxide precipitates; pii; rauta; erkautuminen; sisäisen getterointi; happierkauma

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APA (6th Edition):

Haarahiltunen, A. (2007). Heterogeneous Precipitation and Internal Gettering Efficiency of Iron in Silicon. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2007/isbn9789512286843/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Haarahiltunen, Antti. “Heterogeneous Precipitation and Internal Gettering Efficiency of Iron in Silicon.” 2007. Thesis, Helsinki University of Technology. Accessed April 20, 2021. http://lib.tkk.fi/Diss/2007/isbn9789512286843/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Haarahiltunen, Antti. “Heterogeneous Precipitation and Internal Gettering Efficiency of Iron in Silicon.” 2007. Web. 20 Apr 2021.

Vancouver:

Haarahiltunen A. Heterogeneous Precipitation and Internal Gettering Efficiency of Iron in Silicon. [Internet] [Thesis]. Helsinki University of Technology; 2007. [cited 2021 Apr 20]. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512286843/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Haarahiltunen A. Heterogeneous Precipitation and Internal Gettering Efficiency of Iron in Silicon. [Thesis]. Helsinki University of Technology; 2007. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512286843/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Toronto

4. Shaghayegh, Esfahani. Solvent Refining of Metallurgical Grade Silicon Using Iron.

Degree: 2010, University of Toronto

Purification of metallurgical grade silicon (MG- Si) by a combination of solvent refining and physical separation has been studied. MG-Si was alloyed with iron and… (more)

Subjects/Keywords: Metallurgical Grade Silicon; Solar Grade Silicon; Solvent Refining; Heavy Medium; Physical Separation; Gettering; 0794

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APA (6th Edition):

Shaghayegh, E. (2010). Solvent Refining of Metallurgical Grade Silicon Using Iron. (Masters Thesis). University of Toronto. Retrieved from http://hdl.handle.net/1807/25570

Chicago Manual of Style (16th Edition):

Shaghayegh, Esfahani. “Solvent Refining of Metallurgical Grade Silicon Using Iron.” 2010. Masters Thesis, University of Toronto. Accessed April 20, 2021. http://hdl.handle.net/1807/25570.

MLA Handbook (7th Edition):

Shaghayegh, Esfahani. “Solvent Refining of Metallurgical Grade Silicon Using Iron.” 2010. Web. 20 Apr 2021.

Vancouver:

Shaghayegh E. Solvent Refining of Metallurgical Grade Silicon Using Iron. [Internet] [Masters thesis]. University of Toronto; 2010. [cited 2021 Apr 20]. Available from: http://hdl.handle.net/1807/25570.

Council of Science Editors:

Shaghayegh E. Solvent Refining of Metallurgical Grade Silicon Using Iron. [Masters Thesis]. University of Toronto; 2010. Available from: http://hdl.handle.net/1807/25570


University of Houston

5. -7969-6546. Application of Gettering Layers for Low Temperature Conversion of Magnetic Oxides into Ferromagnetic Metals in Thin Films, Multilayers, and Nanostructured Arrays.

Degree: PhD, Materials Engineering, 2015, University of Houston

 Nanoscale patterning of magnetic metals and their alloys remains a significant challenge due to the lack of reactive-ion etching (RIE) chemistries producing volatile compounds of… (more)

Subjects/Keywords: Magnetic oxides; Low temperature applications; Annealing; COPD; Bit patterned media; Gettering layer; Tantalum

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APA (6th Edition):

-7969-6546. (2015). Application of Gettering Layers for Low Temperature Conversion of Magnetic Oxides into Ferromagnetic Metals in Thin Films, Multilayers, and Nanostructured Arrays. (Doctoral Dissertation). University of Houston. Retrieved from http://hdl.handle.net/10657/1975

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-7969-6546. “Application of Gettering Layers for Low Temperature Conversion of Magnetic Oxides into Ferromagnetic Metals in Thin Films, Multilayers, and Nanostructured Arrays.” 2015. Doctoral Dissertation, University of Houston. Accessed April 20, 2021. http://hdl.handle.net/10657/1975.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-7969-6546. “Application of Gettering Layers for Low Temperature Conversion of Magnetic Oxides into Ferromagnetic Metals in Thin Films, Multilayers, and Nanostructured Arrays.” 2015. Web. 20 Apr 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-7969-6546. Application of Gettering Layers for Low Temperature Conversion of Magnetic Oxides into Ferromagnetic Metals in Thin Films, Multilayers, and Nanostructured Arrays. [Internet] [Doctoral dissertation]. University of Houston; 2015. [cited 2021 Apr 20]. Available from: http://hdl.handle.net/10657/1975.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-7969-6546. Application of Gettering Layers for Low Temperature Conversion of Magnetic Oxides into Ferromagnetic Metals in Thin Films, Multilayers, and Nanostructured Arrays. [Doctoral Dissertation]. University of Houston; 2015. Available from: http://hdl.handle.net/10657/1975

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of South Florida

6. Bauer, Christopher. Magnetocaloric Effect in Thin Films and Heterostructures.

Degree: 2011, University of South Florida

 The goals of this work are the optimization of the magnetocaloric effect in Gadolinium thin film structures. We approach this issue from two directions, that… (more)

Subjects/Keywords: Gettering; Magnetic Refrigeration; Nanostructuring; Phase Changes; Superlattices; American Studies; Arts and Humanities; Physics

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APA (6th Edition):

Bauer, C. (2011). Magnetocaloric Effect in Thin Films and Heterostructures. (Thesis). University of South Florida. Retrieved from https://scholarcommons.usf.edu/etd/3003

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bauer, Christopher. “Magnetocaloric Effect in Thin Films and Heterostructures.” 2011. Thesis, University of South Florida. Accessed April 20, 2021. https://scholarcommons.usf.edu/etd/3003.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bauer, Christopher. “Magnetocaloric Effect in Thin Films and Heterostructures.” 2011. Web. 20 Apr 2021.

Vancouver:

Bauer C. Magnetocaloric Effect in Thin Films and Heterostructures. [Internet] [Thesis]. University of South Florida; 2011. [cited 2021 Apr 20]. Available from: https://scholarcommons.usf.edu/etd/3003.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bauer C. Magnetocaloric Effect in Thin Films and Heterostructures. [Thesis]. University of South Florida; 2011. Available from: https://scholarcommons.usf.edu/etd/3003

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

7. Lysáček, David. Tenké vrstvy polykrystalického křemíku: Thin Films of Polycrystalline Silicon.

Degree: 2018, Brno University of Technology

 The doctoral thesis deals with the structure and properties of the polycrystalline silicon layers deposited on the silicon wafers backside. The wafers are further used… (more)

Subjects/Keywords: polykrystalický křemík; getrace; multivrstevnaté struktury; chemická depozice z plynné fáze; polycrystalline silicon; gettering; multilayer structure; chemical vapor deposition

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APA (6th Edition):

Lysáček, D. (2018). Tenké vrstvy polykrystalického křemíku: Thin Films of Polycrystalline Silicon. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/7145

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lysáček, David. “Tenké vrstvy polykrystalického křemíku: Thin Films of Polycrystalline Silicon.” 2018. Thesis, Brno University of Technology. Accessed April 20, 2021. http://hdl.handle.net/11012/7145.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lysáček, David. “Tenké vrstvy polykrystalického křemíku: Thin Films of Polycrystalline Silicon.” 2018. Web. 20 Apr 2021.

Vancouver:

Lysáček D. Tenké vrstvy polykrystalického křemíku: Thin Films of Polycrystalline Silicon. [Internet] [Thesis]. Brno University of Technology; 2018. [cited 2021 Apr 20]. Available from: http://hdl.handle.net/11012/7145.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lysáček D. Tenké vrstvy polykrystalického křemíku: Thin Films of Polycrystalline Silicon. [Thesis]. Brno University of Technology; 2018. Available from: http://hdl.handle.net/11012/7145

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Ohio University

8. Wang, Jingzhou. Optical and Electrical Study of the Rare Earth Doped III-nitride Semiconductor Materials.

Degree: PhD, Electrical Engineering & Computer Science (Engineering and Technology), 2016, Ohio University

 The technological advantages of III-nitride semiconductors (III-Ns) have been demonstrated among others in the area of light emitting applications. Due to fundamental reasons limiting growth… (more)

Subjects/Keywords: Electrical Engineering; Materials Science; Nanotechnology; Optics; III-nitride; GaN; InGaN; Europium; Ytterbium; defect; deep level spectroscopy; DLTS; Laplace-DLTS; MCTS; gettering

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APA (6th Edition):

Wang, J. (2016). Optical and Electrical Study of the Rare Earth Doped III-nitride Semiconductor Materials. (Doctoral Dissertation). Ohio University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1478177382556951

Chicago Manual of Style (16th Edition):

Wang, Jingzhou. “Optical and Electrical Study of the Rare Earth Doped III-nitride Semiconductor Materials.” 2016. Doctoral Dissertation, Ohio University. Accessed April 20, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1478177382556951.

MLA Handbook (7th Edition):

Wang, Jingzhou. “Optical and Electrical Study of the Rare Earth Doped III-nitride Semiconductor Materials.” 2016. Web. 20 Apr 2021.

Vancouver:

Wang J. Optical and Electrical Study of the Rare Earth Doped III-nitride Semiconductor Materials. [Internet] [Doctoral dissertation]. Ohio University; 2016. [cited 2021 Apr 20]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1478177382556951.

Council of Science Editors:

Wang J. Optical and Electrical Study of the Rare Earth Doped III-nitride Semiconductor Materials. [Doctoral Dissertation]. Ohio University; 2016. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1478177382556951


Iowa State University

9. Jirak, Jason Edward. Enhancement of minority carrier lifetime in low quality silicon by ion implantation of arsenic and antimony.

Degree: 2009, Iowa State University

 The scope of this work is to determine the effect of ion implantation on the minority carrier lifetimes of upgraded metallurgical grade (UMG) silicon solar… (more)

Subjects/Keywords: Antimony; Arsenic; Diffusion Length; Gettering; Ion Implantation; Electrical and Computer Engineering

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APA (6th Edition):

Jirak, J. E. (2009). Enhancement of minority carrier lifetime in low quality silicon by ion implantation of arsenic and antimony. (Thesis). Iowa State University. Retrieved from https://lib.dr.iastate.edu/etd/10799

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jirak, Jason Edward. “Enhancement of minority carrier lifetime in low quality silicon by ion implantation of arsenic and antimony.” 2009. Thesis, Iowa State University. Accessed April 20, 2021. https://lib.dr.iastate.edu/etd/10799.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jirak, Jason Edward. “Enhancement of minority carrier lifetime in low quality silicon by ion implantation of arsenic and antimony.” 2009. Web. 20 Apr 2021.

Vancouver:

Jirak JE. Enhancement of minority carrier lifetime in low quality silicon by ion implantation of arsenic and antimony. [Internet] [Thesis]. Iowa State University; 2009. [cited 2021 Apr 20]. Available from: https://lib.dr.iastate.edu/etd/10799.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jirak JE. Enhancement of minority carrier lifetime in low quality silicon by ion implantation of arsenic and antimony. [Thesis]. Iowa State University; 2009. Available from: https://lib.dr.iastate.edu/etd/10799

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

10. Das, Arnab. Development of high-efficiency boron diffused silicon solar cells.

Degree: PhD, Electrical and Computer Engineering, 2012, Georgia Tech

 The objective of the proposed research is to develop low-cost, screen-printed 20% efficient silicon solar cells. In the first part of this thesis, a ~19%… (more)

Subjects/Keywords: Solar cells; Gettering; Boron diffusion; Passivation; Gettering; Light induced degradation; Photovoltaic power generation; Photovoltaic cells; Silicon solar cells; Boron

…Fe gettering ability of POCl3-diffusion. The dashed line shows the average starting… …140 Figure 8.13 Surface SIMS measurement of Fe on a Fe-contained wafer after gettering with… …from the B-BSF during the POCl3 cycle. The strong Fe gettering ability of the Al-doped SOG… …was attributed to its negative charge density, i.e. the gettering is driven by electrostatic… 

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APA (6th Edition):

Das, A. (2012). Development of high-efficiency boron diffused silicon solar cells. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/44718

Chicago Manual of Style (16th Edition):

Das, Arnab. “Development of high-efficiency boron diffused silicon solar cells.” 2012. Doctoral Dissertation, Georgia Tech. Accessed April 20, 2021. http://hdl.handle.net/1853/44718.

MLA Handbook (7th Edition):

Das, Arnab. “Development of high-efficiency boron diffused silicon solar cells.” 2012. Web. 20 Apr 2021.

Vancouver:

Das A. Development of high-efficiency boron diffused silicon solar cells. [Internet] [Doctoral dissertation]. Georgia Tech; 2012. [cited 2021 Apr 20]. Available from: http://hdl.handle.net/1853/44718.

Council of Science Editors:

Das A. Development of high-efficiency boron diffused silicon solar cells. [Doctoral Dissertation]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/44718


North Carolina State University

11. Park, Yongkook. Electrical Properties of Grain Boundaries and Dislocations in Crystalline Silicon: Influence of Impurity Incorporation and Hydrogenation.

Degree: PhD, Materials Science and Engineering, 2009, North Carolina State University

 This thesis examines the electrical properties of grain boundaries (GBs) and dislocations in crystalline silicon. The influence of impurity incorporation and hydrogenation on the electrical… (more)

Subjects/Keywords: electronic structure of silicon grain boundary; retention of impurity at dislocations; hydrogen segregation; thermal dissociation kinetics; impurity gettering; electrical activity of dislocations; hydrogen passivation; carrier recombination activity; multi-crystalline silicon solar cells

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APA (6th Edition):

Park, Y. (2009). Electrical Properties of Grain Boundaries and Dislocations in Crystalline Silicon: Influence of Impurity Incorporation and Hydrogenation. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3390

Chicago Manual of Style (16th Edition):

Park, Yongkook. “Electrical Properties of Grain Boundaries and Dislocations in Crystalline Silicon: Influence of Impurity Incorporation and Hydrogenation.” 2009. Doctoral Dissertation, North Carolina State University. Accessed April 20, 2021. http://www.lib.ncsu.edu/resolver/1840.16/3390.

MLA Handbook (7th Edition):

Park, Yongkook. “Electrical Properties of Grain Boundaries and Dislocations in Crystalline Silicon: Influence of Impurity Incorporation and Hydrogenation.” 2009. Web. 20 Apr 2021.

Vancouver:

Park Y. Electrical Properties of Grain Boundaries and Dislocations in Crystalline Silicon: Influence of Impurity Incorporation and Hydrogenation. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2021 Apr 20]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3390.

Council of Science Editors:

Park Y. Electrical Properties of Grain Boundaries and Dislocations in Crystalline Silicon: Influence of Impurity Incorporation and Hydrogenation. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3390

12. ZHENQI WU. IMPURITY GETTERING BY PHOSPHOROUS DOPING IN SILICON WAFERS.

Degree: 2010, National University of Singapore

Subjects/Keywords: phosphorous pre-gettering; multi-crystalline wafer; solar cell; in-line diffusion furnace; iron impurity; dislocation

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APA (6th Edition):

WU, Z. (2010). IMPURITY GETTERING BY PHOSPHOROUS DOPING IN SILICON WAFERS. (Thesis). National University of Singapore. Retrieved from https://scholarbank.nus.edu.sg/handle/10635/153958

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

WU, ZHENQI. “IMPURITY GETTERING BY PHOSPHOROUS DOPING IN SILICON WAFERS.” 2010. Thesis, National University of Singapore. Accessed April 20, 2021. https://scholarbank.nus.edu.sg/handle/10635/153958.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

WU, ZHENQI. “IMPURITY GETTERING BY PHOSPHOROUS DOPING IN SILICON WAFERS.” 2010. Web. 20 Apr 2021.

Vancouver:

WU Z. IMPURITY GETTERING BY PHOSPHOROUS DOPING IN SILICON WAFERS. [Internet] [Thesis]. National University of Singapore; 2010. [cited 2021 Apr 20]. Available from: https://scholarbank.nus.edu.sg/handle/10635/153958.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

WU Z. IMPURITY GETTERING BY PHOSPHOROUS DOPING IN SILICON WAFERS. [Thesis]. National University of Singapore; 2010. Available from: https://scholarbank.nus.edu.sg/handle/10635/153958

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

13. Martin, Michael S. Heteroepitaxial Self Assembling Noble Metal Nanoparticles in Monocrystalline Silicon.

Degree: PhD, Nuclear Engineering, 2013, Texas A&M University

 Embedding metal nanoparticles in crystalline silicon possesses numerous possible applications to fabricate optoelectronic switches, increase efficiency of radiation detectors, decrease the thickness of monocrystalline silicon… (more)

Subjects/Keywords: silicon; silver; gold; nanoparticles; void; defect; diffusion; heteroepitaxy; epitaxy; single crystal metal; void gettering

gettering [47]. We implant gold ions at energy 60 keV, with projected range 15 nm in… 

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APA (6th Edition):

Martin, M. S. (2013). Heteroepitaxial Self Assembling Noble Metal Nanoparticles in Monocrystalline Silicon. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/153204

Chicago Manual of Style (16th Edition):

Martin, Michael S. “Heteroepitaxial Self Assembling Noble Metal Nanoparticles in Monocrystalline Silicon.” 2013. Doctoral Dissertation, Texas A&M University. Accessed April 20, 2021. http://hdl.handle.net/1969.1/153204.

MLA Handbook (7th Edition):

Martin, Michael S. “Heteroepitaxial Self Assembling Noble Metal Nanoparticles in Monocrystalline Silicon.” 2013. Web. 20 Apr 2021.

Vancouver:

Martin MS. Heteroepitaxial Self Assembling Noble Metal Nanoparticles in Monocrystalline Silicon. [Internet] [Doctoral dissertation]. Texas A&M University; 2013. [cited 2021 Apr 20]. Available from: http://hdl.handle.net/1969.1/153204.

Council of Science Editors:

Martin MS. Heteroepitaxial Self Assembling Noble Metal Nanoparticles in Monocrystalline Silicon. [Doctoral Dissertation]. Texas A&M University; 2013. Available from: http://hdl.handle.net/1969.1/153204


Kyoto University

14. Hirose, Ryo. Novel molecular ion implantation technology for proximity gettering in silicon wafer for CMOS image sensor .

Degree: 2020, Kyoto University

Subjects/Keywords: proximity gettering technology; silicon wafer; molecular ion implantation; CMOS image sensor; ion implantation defect

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APA (6th Edition):

Hirose, R. (2020). Novel molecular ion implantation technology for proximity gettering in silicon wafer for CMOS image sensor . (Thesis). Kyoto University. Retrieved from http://hdl.handle.net/2433/253278

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hirose, Ryo. “Novel molecular ion implantation technology for proximity gettering in silicon wafer for CMOS image sensor .” 2020. Thesis, Kyoto University. Accessed April 20, 2021. http://hdl.handle.net/2433/253278.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hirose, Ryo. “Novel molecular ion implantation technology for proximity gettering in silicon wafer for CMOS image sensor .” 2020. Web. 20 Apr 2021.

Vancouver:

Hirose R. Novel molecular ion implantation technology for proximity gettering in silicon wafer for CMOS image sensor . [Internet] [Thesis]. Kyoto University; 2020. [cited 2021 Apr 20]. Available from: http://hdl.handle.net/2433/253278.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hirose R. Novel molecular ion implantation technology for proximity gettering in silicon wafer for CMOS image sensor . [Thesis]. Kyoto University; 2020. Available from: http://hdl.handle.net/2433/253278

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. Yazdani, Armin. Performance Optimization of Lifetime Sensitive Devices Based on Coupled Optical, Process, and Device Modeling.

Degree: PhD, 2015, University of Washington

 The market for silicon electronic devices such as photovoltaics and image sensors has been experiencing explosive growth in recent years. Silicon solar cells are gathering… (more)

Subjects/Keywords: CMOS Image Sensors; Device Modeling; Gettering; Optical Modeling; Process Modeling; Silicon Textured Solar Cells; Electrical engineering; electrical engineering

…42 Chapter 4. Coupled Modeling of the Gettering of Transition Metals and Performance of… …45 4.1.1 DFT Calculations of Energetics of Metal Binding to Gettering Sites… …46 4.1.2 Continuum Models for Metal Redistribution and Gettering… …47 4.1.3 Verification of the Gettering Models… …Binding Energy of Interstitial Metals to Different Gettering Sites Calculated by DFT in VASP… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yazdani, A. (2015). Performance Optimization of Lifetime Sensitive Devices Based on Coupled Optical, Process, and Device Modeling. (Doctoral Dissertation). University of Washington. Retrieved from http://hdl.handle.net/1773/33801

Chicago Manual of Style (16th Edition):

Yazdani, Armin. “Performance Optimization of Lifetime Sensitive Devices Based on Coupled Optical, Process, and Device Modeling.” 2015. Doctoral Dissertation, University of Washington. Accessed April 20, 2021. http://hdl.handle.net/1773/33801.

MLA Handbook (7th Edition):

Yazdani, Armin. “Performance Optimization of Lifetime Sensitive Devices Based on Coupled Optical, Process, and Device Modeling.” 2015. Web. 20 Apr 2021.

Vancouver:

Yazdani A. Performance Optimization of Lifetime Sensitive Devices Based on Coupled Optical, Process, and Device Modeling. [Internet] [Doctoral dissertation]. University of Washington; 2015. [cited 2021 Apr 20]. Available from: http://hdl.handle.net/1773/33801.

Council of Science Editors:

Yazdani A. Performance Optimization of Lifetime Sensitive Devices Based on Coupled Optical, Process, and Device Modeling. [Doctoral Dissertation]. University of Washington; 2015. Available from: http://hdl.handle.net/1773/33801

.