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You searched for subject:(gate dielectric). Showing records 1 – 30 of 50 total matches.

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Rochester Institute of Technology

1. Fenger, Germain L. Development of plasma enhanced chemical vapor deposition (PECVD) gate dielectrics for TFT applications.

Degree: Microelectronic Engineering, 2010, Rochester Institute of Technology

 This study investigated a variety of electrically insulating materials for potential use as a gate dielectric in thin-film transistor applications. The materials that were investigated… (more)

Subjects/Keywords: Dielectric; Gate oxide; Low temperature; PECVD; TFT

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fenger, G. L. (2010). Development of plasma enhanced chemical vapor deposition (PECVD) gate dielectrics for TFT applications. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/7433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Fenger, Germain L. “Development of plasma enhanced chemical vapor deposition (PECVD) gate dielectrics for TFT applications.” 2010. Thesis, Rochester Institute of Technology. Accessed August 15, 2020. https://scholarworks.rit.edu/theses/7433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Fenger, Germain L. “Development of plasma enhanced chemical vapor deposition (PECVD) gate dielectrics for TFT applications.” 2010. Web. 15 Aug 2020.

Vancouver:

Fenger GL. Development of plasma enhanced chemical vapor deposition (PECVD) gate dielectrics for TFT applications. [Internet] [Thesis]. Rochester Institute of Technology; 2010. [cited 2020 Aug 15]. Available from: https://scholarworks.rit.edu/theses/7433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Fenger GL. Development of plasma enhanced chemical vapor deposition (PECVD) gate dielectrics for TFT applications. [Thesis]. Rochester Institute of Technology; 2010. Available from: https://scholarworks.rit.edu/theses/7433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Linköping University

2. Lü, Bo. Growth and characterization of HfON thin films with the crystal structures of HfO2.

Degree: Plasma and Coating Physics, 2011, Linköping University

  HfO2 is a popular replacement for SiO2 in modern CMOS technology. It is used as the gate dielectric layer isolating the transistor channel from… (more)

Subjects/Keywords: hafnium dioxide; thin films; gate dielectric; nitrogen incorporation; dielectric constant; crystal structure; HIPIMS; magnetron sputtering

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APA (6th Edition):

Lü, B. (2011). Growth and characterization of HfON thin films with the crystal structures of HfO2. (Thesis). Linköping University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71620

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lü, Bo. “Growth and characterization of HfON thin films with the crystal structures of HfO2.” 2011. Thesis, Linköping University. Accessed August 15, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71620.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lü, Bo. “Growth and characterization of HfON thin films with the crystal structures of HfO2.” 2011. Web. 15 Aug 2020.

Vancouver:

Lü B. Growth and characterization of HfON thin films with the crystal structures of HfO2. [Internet] [Thesis]. Linköping University; 2011. [cited 2020 Aug 15]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71620.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lü B. Growth and characterization of HfON thin films with the crystal structures of HfO2. [Thesis]. Linköping University; 2011. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71620

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

3. Subin Thomas; Dr. K. Rajeev Kumar. Microwave Plasma Assisted ALD Development for the Deposition of Gate Oxides & ALD of High-k Dielectrics.

Degree: 2015, Cochin University of Science and Technology

 The semiconductor industry's urge towards faster, smaller and cheaper integrated circuits has lead the industry to smaller node devices. The integrated circuits that are now… (more)

Subjects/Keywords: Semiconductors; tri-gate transistor structure; Thin Flims; Dielectric Properties

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APA (6th Edition):

Kumar, S. T. D. K. R. (2015). Microwave Plasma Assisted ALD Development for the Deposition of Gate Oxides & ALD of High-k Dielectrics. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/5101

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kumar, Subin Thomas; Dr. K. Rajeev. “Microwave Plasma Assisted ALD Development for the Deposition of Gate Oxides & ALD of High-k Dielectrics.” 2015. Thesis, Cochin University of Science and Technology. Accessed August 15, 2020. http://dyuthi.cusat.ac.in/purl/5101.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kumar, Subin Thomas; Dr. K. Rajeev. “Microwave Plasma Assisted ALD Development for the Deposition of Gate Oxides & ALD of High-k Dielectrics.” 2015. Web. 15 Aug 2020.

Vancouver:

Kumar STDKR. Microwave Plasma Assisted ALD Development for the Deposition of Gate Oxides & ALD of High-k Dielectrics. [Internet] [Thesis]. Cochin University of Science and Technology; 2015. [cited 2020 Aug 15]. Available from: http://dyuthi.cusat.ac.in/purl/5101.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kumar STDKR. Microwave Plasma Assisted ALD Development for the Deposition of Gate Oxides & ALD of High-k Dielectrics. [Thesis]. Cochin University of Science and Technology; 2015. Available from: http://dyuthi.cusat.ac.in/purl/5101

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. JOO MOON SIG. Hf-based high-K gate dielectric and metal gate stack for advanced CMOS devices.

Degree: 2006, National University of Singapore

Subjects/Keywords: high-K dielectric; metal gate; Hf-based; CMOS; gate dielectric; work function

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APA (6th Edition):

SIG, J. M. (2006). Hf-based high-K gate dielectric and metal gate stack for advanced CMOS devices. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/15386

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

SIG, JOO MOON. “Hf-based high-K gate dielectric and metal gate stack for advanced CMOS devices.” 2006. Thesis, National University of Singapore. Accessed August 15, 2020. http://scholarbank.nus.edu.sg/handle/10635/15386.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

SIG, JOO MOON. “Hf-based high-K gate dielectric and metal gate stack for advanced CMOS devices.” 2006. Web. 15 Aug 2020.

Vancouver:

SIG JM. Hf-based high-K gate dielectric and metal gate stack for advanced CMOS devices. [Internet] [Thesis]. National University of Singapore; 2006. [cited 2020 Aug 15]. Available from: http://scholarbank.nus.edu.sg/handle/10635/15386.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

SIG JM. Hf-based high-K gate dielectric and metal gate stack for advanced CMOS devices. [Thesis]. National University of Singapore; 2006. Available from: http://scholarbank.nus.edu.sg/handle/10635/15386

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


UCLA

5. Perng, Ya-Chuan. Engineering Al-based Thin Film Materials for Power Devices and Energy Storage Applications.

Degree: Chemical Engineering, 2012, UCLA

 Al-based materials, specifically aluminum oxide (Al2O3), aluminum nitride (AlN) and lithium aluminosilicate (LixAlySizO) were synthesized via atomic layer deposition (ALD) and investigated for their applications… (more)

Subjects/Keywords: Chemical engineering; Materials Science; Atomic layer deposition; Gate dielectric; Li-ion batteries; solid electrolyte

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APA (6th Edition):

Perng, Y. (2012). Engineering Al-based Thin Film Materials for Power Devices and Energy Storage Applications. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/9dw399n1

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Perng, Ya-Chuan. “Engineering Al-based Thin Film Materials for Power Devices and Energy Storage Applications.” 2012. Thesis, UCLA. Accessed August 15, 2020. http://www.escholarship.org/uc/item/9dw399n1.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Perng, Ya-Chuan. “Engineering Al-based Thin Film Materials for Power Devices and Energy Storage Applications.” 2012. Web. 15 Aug 2020.

Vancouver:

Perng Y. Engineering Al-based Thin Film Materials for Power Devices and Energy Storage Applications. [Internet] [Thesis]. UCLA; 2012. [cited 2020 Aug 15]. Available from: http://www.escholarship.org/uc/item/9dw399n1.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Perng Y. Engineering Al-based Thin Film Materials for Power Devices and Energy Storage Applications. [Thesis]. UCLA; 2012. Available from: http://www.escholarship.org/uc/item/9dw399n1

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

6. Adhikari, Jwala Mani. Role of Interfacial, Static and Dynamic Disorder on High Performance Organic Field-effect Transistors.

Degree: 2016, Penn State University

 The internet and electronic devices have become integral to our everyday life. As the world is beginning to march towards the Internet of Things, surging… (more)

Subjects/Keywords: organic semiconductors; organic single crystals; thin film disorder; polymer gate dielectric; rubrene; C8BTBT

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APA (6th Edition):

Adhikari, J. M. (2016). Role of Interfacial, Static and Dynamic Disorder on High Performance Organic Field-effect Transistors. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/28935

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Adhikari, Jwala Mani. “Role of Interfacial, Static and Dynamic Disorder on High Performance Organic Field-effect Transistors.” 2016. Thesis, Penn State University. Accessed August 15, 2020. https://submit-etda.libraries.psu.edu/catalog/28935.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Adhikari, Jwala Mani. “Role of Interfacial, Static and Dynamic Disorder on High Performance Organic Field-effect Transistors.” 2016. Web. 15 Aug 2020.

Vancouver:

Adhikari JM. Role of Interfacial, Static and Dynamic Disorder on High Performance Organic Field-effect Transistors. [Internet] [Thesis]. Penn State University; 2016. [cited 2020 Aug 15]. Available from: https://submit-etda.libraries.psu.edu/catalog/28935.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Adhikari JM. Role of Interfacial, Static and Dynamic Disorder on High Performance Organic Field-effect Transistors. [Thesis]. Penn State University; 2016. Available from: https://submit-etda.libraries.psu.edu/catalog/28935

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

7. Ji, Jing. Impacts of Oxygen Plasma Surface Treatment on Performance and Reliability of N-type Poly-Si Thin-Film Transistors With TiN/HfO2 Gate Stack.

Degree: Master, Electrical Engineering, 2016, NSYSU

 The application of polysilicon thin-film transistors in active matrix liquid crystal displays has been the main driver of the development of polysilicon thin-film transistors technology.… (more)

Subjects/Keywords: O2 plasma surface treatment; poly-Si TFTs; high-k gate dielectric; short channel effect; reliability

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APA (6th Edition):

Ji, J. (2016). Impacts of Oxygen Plasma Surface Treatment on Performance and Reliability of N-type Poly-Si Thin-Film Transistors With TiN/HfO2 Gate Stack. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708116-115616

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ji, Jing. “Impacts of Oxygen Plasma Surface Treatment on Performance and Reliability of N-type Poly-Si Thin-Film Transistors With TiN/HfO2 Gate Stack.” 2016. Thesis, NSYSU. Accessed August 15, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708116-115616.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ji, Jing. “Impacts of Oxygen Plasma Surface Treatment on Performance and Reliability of N-type Poly-Si Thin-Film Transistors With TiN/HfO2 Gate Stack.” 2016. Web. 15 Aug 2020.

Vancouver:

Ji J. Impacts of Oxygen Plasma Surface Treatment on Performance and Reliability of N-type Poly-Si Thin-Film Transistors With TiN/HfO2 Gate Stack. [Internet] [Thesis]. NSYSU; 2016. [cited 2020 Aug 15]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708116-115616.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ji J. Impacts of Oxygen Plasma Surface Treatment on Performance and Reliability of N-type Poly-Si Thin-Film Transistors With TiN/HfO2 Gate Stack. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708116-115616

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

8. Ganapathi, K Lakshmi. Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials.

Degree: PhD, Faculty of Engineering, 2018, Indian Institute of Science

 Recently, high-κ materials have become the focus of research and been extensively utilized as the gate dielectric layer in aggressive scaled complementary metal-oxide-semiconductor (CMOS) technology.… (more)

Subjects/Keywords: Hafnium Dioxide Thin Films; Complementary Metal-Oxide Semiconductors (CMOS); Two-Dimensional Layered Materials - Gate Dielectrics; High-K Materials; Gate Dielectric; High-K Gate Dielectric; Nanoelectronic Devices - Gate Dielectrics; HfO2 Gate Dielectrics; Dielectric Thin Films; HfO2 Back Gated Graphene Transistors; HfO2 Back Gated MoS2 Transistors; Dielectrics; Metal-Oxide Semiconductor Transistors; HfO2 Thin Films; 2-D lLyered Materials; Instrumentation and Applied Physics

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APA (6th Edition):

Ganapathi, K. L. (2018). Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/3219

Chicago Manual of Style (16th Edition):

Ganapathi, K Lakshmi. “Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials.” 2018. Doctoral Dissertation, Indian Institute of Science. Accessed August 15, 2020. http://etd.iisc.ac.in/handle/2005/3219.

MLA Handbook (7th Edition):

Ganapathi, K Lakshmi. “Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials.” 2018. Web. 15 Aug 2020.

Vancouver:

Ganapathi KL. Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2018. [cited 2020 Aug 15]. Available from: http://etd.iisc.ac.in/handle/2005/3219.

Council of Science Editors:

Ganapathi KL. Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials. [Doctoral Dissertation]. Indian Institute of Science; 2018. Available from: http://etd.iisc.ac.in/handle/2005/3219


North Carolina State University

9. Han, Sungkee. Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self-Aligned Gate Process.

Degree: PhD, Materials Science and Engineering, 2003, North Carolina State University

 In order to improve MOSFET transistor performance, aggressive scaling of devices has continued. As lateral device dimensions continue to scale down, gate oxide thicknesses must… (more)

Subjects/Keywords: device integration; metal gate electrode; high K dielectric; non-self aligned gate process

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APA (6th Edition):

Han, S. (2003). Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self-Aligned Gate Process. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5056

Chicago Manual of Style (16th Edition):

Han, Sungkee. “Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self-Aligned Gate Process.” 2003. Doctoral Dissertation, North Carolina State University. Accessed August 15, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5056.

MLA Handbook (7th Edition):

Han, Sungkee. “Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self-Aligned Gate Process.” 2003. Web. 15 Aug 2020.

Vancouver:

Han S. Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self-Aligned Gate Process. [Internet] [Doctoral dissertation]. North Carolina State University; 2003. [cited 2020 Aug 15]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5056.

Council of Science Editors:

Han S. Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self-Aligned Gate Process. [Doctoral Dissertation]. North Carolina State University; 2003. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5056


George Mason University

10. Yang, Yang. Issues of ESD protection in nano-scale CMOS .

Degree: 2010, George Mason University

 Aggressive downsizing of individual transistors continues to improve the perfor- mance of integrated circuits. However, as the transistors get smaller, they become more vulnerable to… (more)

Subjects/Keywords: electrostatic discharge (esd); field effect diode; gate dielectric breakdown; high-k gate

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APA (6th Edition):

Yang, Y. (2010). Issues of ESD protection in nano-scale CMOS . (Thesis). George Mason University. Retrieved from http://hdl.handle.net/1920/6024

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Yang. “Issues of ESD protection in nano-scale CMOS .” 2010. Thesis, George Mason University. Accessed August 15, 2020. http://hdl.handle.net/1920/6024.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Yang. “Issues of ESD protection in nano-scale CMOS .” 2010. Web. 15 Aug 2020.

Vancouver:

Yang Y. Issues of ESD protection in nano-scale CMOS . [Internet] [Thesis]. George Mason University; 2010. [cited 2020 Aug 15]. Available from: http://hdl.handle.net/1920/6024.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang Y. Issues of ESD protection in nano-scale CMOS . [Thesis]. George Mason University; 2010. Available from: http://hdl.handle.net/1920/6024

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

11. Anu, Philip. Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications.

Degree: Instrumentation, 2011, Cochin University of Science and Technology

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for… (more)

Subjects/Keywords: Thin Films; Atomic Layer Deposition; High-k Aluminum Oxide; Gate Dielectric Applications; Plasma Enhanced Atomic Layer Deposition

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APA (6th Edition):

Anu, P. (2011). Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/3034

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Anu, Philip. “Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications.” 2011. Thesis, Cochin University of Science and Technology. Accessed August 15, 2020. http://dyuthi.cusat.ac.in/purl/3034.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Anu, Philip. “Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications.” 2011. Web. 15 Aug 2020.

Vancouver:

Anu P. Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications. [Internet] [Thesis]. Cochin University of Science and Technology; 2011. [cited 2020 Aug 15]. Available from: http://dyuthi.cusat.ac.in/purl/3034.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Anu P. Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications. [Thesis]. Cochin University of Science and Technology; 2011. Available from: http://dyuthi.cusat.ac.in/purl/3034

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Case Western Reserve University

12. Speer, Kevin M. The Silicon Carbide Vacuum Field-Effect Transistor (VacFET).

Degree: PhD, EECS - Electrical Engineering, 2011, Case Western Reserve University

  A novel field-effect transistor architecture is introduced that uses a micromachined, sealed vacuum cavity as the gate dielectric and 4H-SiC as the semiconductor material.… (more)

Subjects/Keywords: Electrical Engineering; Materials Science; Solid State Physics; silicon carbide; field-effect transistor; MOSFET; 4H-SiC; vacuum; gate dielectric; interface states

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APA (6th Edition):

Speer, K. M. (2011). The Silicon Carbide Vacuum Field-Effect Transistor (VacFET). (Doctoral Dissertation). Case Western Reserve University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=case1301445427

Chicago Manual of Style (16th Edition):

Speer, Kevin M. “The Silicon Carbide Vacuum Field-Effect Transistor (VacFET).” 2011. Doctoral Dissertation, Case Western Reserve University. Accessed August 15, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=case1301445427.

MLA Handbook (7th Edition):

Speer, Kevin M. “The Silicon Carbide Vacuum Field-Effect Transistor (VacFET).” 2011. Web. 15 Aug 2020.

Vancouver:

Speer KM. The Silicon Carbide Vacuum Field-Effect Transistor (VacFET). [Internet] [Doctoral dissertation]. Case Western Reserve University; 2011. [cited 2020 Aug 15]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=case1301445427.

Council of Science Editors:

Speer KM. The Silicon Carbide Vacuum Field-Effect Transistor (VacFET). [Doctoral Dissertation]. Case Western Reserve University; 2011. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=case1301445427


Texas A&M University

13. Bhattacharya, Shuvodip. A Study of Ozone as an Oxygen Source for the Growth of High-Κ Dielectric Films for Gate Dielectric on GaN/AlGaN/GaN.

Degree: MS, Electrical Engineering, 2016, Texas A&M University

 GaN is a promising alternative to silicon technology for the next-generation high-power and high-frequency electronics. The choice stems from the intrinsic properties of GaN of… (more)

Subjects/Keywords: GaN/AlGaN; ALD; Ozone; High-k; Gate dielectric; MOSHEMT; Leakage current; Interface traps density, Oxygen donors; XPS

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APA (6th Edition):

Bhattacharya, S. (2016). A Study of Ozone as an Oxygen Source for the Growth of High-Κ Dielectric Films for Gate Dielectric on GaN/AlGaN/GaN. (Masters Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/187341

Chicago Manual of Style (16th Edition):

Bhattacharya, Shuvodip. “A Study of Ozone as an Oxygen Source for the Growth of High-Κ Dielectric Films for Gate Dielectric on GaN/AlGaN/GaN.” 2016. Masters Thesis, Texas A&M University. Accessed August 15, 2020. http://hdl.handle.net/1969.1/187341.

MLA Handbook (7th Edition):

Bhattacharya, Shuvodip. “A Study of Ozone as an Oxygen Source for the Growth of High-Κ Dielectric Films for Gate Dielectric on GaN/AlGaN/GaN.” 2016. Web. 15 Aug 2020.

Vancouver:

Bhattacharya S. A Study of Ozone as an Oxygen Source for the Growth of High-Κ Dielectric Films for Gate Dielectric on GaN/AlGaN/GaN. [Internet] [Masters thesis]. Texas A&M University; 2016. [cited 2020 Aug 15]. Available from: http://hdl.handle.net/1969.1/187341.

Council of Science Editors:

Bhattacharya S. A Study of Ozone as an Oxygen Source for the Growth of High-Κ Dielectric Films for Gate Dielectric on GaN/AlGaN/GaN. [Masters Thesis]. Texas A&M University; 2016. Available from: http://hdl.handle.net/1969.1/187341


North Carolina State University

14. Bae, Choelhwyi. GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing.

Degree: PhD, Electrical Engineering, 2003, North Carolina State University

 In previous studies, device quality Si-SiO2 interfaces and dielectric bulk films (SiO2) were prepared using a two-step process; i) remote plasma-assisted oxidation (RPAO) to form… (more)

Subjects/Keywords: interface; passivation; SiO2; MOS; gate dielectric; GaN

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bae, C. (2003). GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4551

Chicago Manual of Style (16th Edition):

Bae, Choelhwyi. “GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing.” 2003. Doctoral Dissertation, North Carolina State University. Accessed August 15, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4551.

MLA Handbook (7th Edition):

Bae, Choelhwyi. “GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing.” 2003. Web. 15 Aug 2020.

Vancouver:

Bae C. GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing. [Internet] [Doctoral dissertation]. North Carolina State University; 2003. [cited 2020 Aug 15]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4551.

Council of Science Editors:

Bae C. GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing. [Doctoral Dissertation]. North Carolina State University; 2003. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4551


North Carolina State University

15. Fulton, Charles Clifton. Spectroscopic Study of the Interface Chemical and Electronic Properties of High-kappa Gate Stacks.

Degree: PhD, Materials Science and Engineering, 2005, North Carolina State University

 X-ray and ultraviolet photoemission spectroscopy has been combined with in-situ deposition to study the interface chemistry and electronic structure of potential high-κ gate stack materials.… (more)

Subjects/Keywords: dielectric; gate stack; high-kappa; high-k; photoemission

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fulton, C. C. (2005). Spectroscopic Study of the Interface Chemical and Electronic Properties of High-kappa Gate Stacks. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3147

Chicago Manual of Style (16th Edition):

Fulton, Charles Clifton. “Spectroscopic Study of the Interface Chemical and Electronic Properties of High-kappa Gate Stacks.” 2005. Doctoral Dissertation, North Carolina State University. Accessed August 15, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3147.

MLA Handbook (7th Edition):

Fulton, Charles Clifton. “Spectroscopic Study of the Interface Chemical and Electronic Properties of High-kappa Gate Stacks.” 2005. Web. 15 Aug 2020.

Vancouver:

Fulton CC. Spectroscopic Study of the Interface Chemical and Electronic Properties of High-kappa Gate Stacks. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Aug 15]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3147.

Council of Science Editors:

Fulton CC. Spectroscopic Study of the Interface Chemical and Electronic Properties of High-kappa Gate Stacks. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3147


North Carolina State University

16. Ju, Byongsun. Properties of Zr Silicate and Zr-Si Oxynitride High-k Dielectric Alloys for Advanced Microelectronic Applications; Chemical and Electrical Characterizations.

Degree: PhD, Materials Science and Engineering, 2005, North Carolina State University

 As the microelectronic devices are aggressively scaled down to the 1999 International Technology Roadmap, the advanced complementary metal oxide semiconductor (CMOS) is required to increase… (more)

Subjects/Keywords: High-k; pseudo-binary(ternary); Gate dielectric

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APA (6th Edition):

Ju, B. (2005). Properties of Zr Silicate and Zr-Si Oxynitride High-k Dielectric Alloys for Advanced Microelectronic Applications; Chemical and Electrical Characterizations. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5469

Chicago Manual of Style (16th Edition):

Ju, Byongsun. “Properties of Zr Silicate and Zr-Si Oxynitride High-k Dielectric Alloys for Advanced Microelectronic Applications; Chemical and Electrical Characterizations.” 2005. Doctoral Dissertation, North Carolina State University. Accessed August 15, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5469.

MLA Handbook (7th Edition):

Ju, Byongsun. “Properties of Zr Silicate and Zr-Si Oxynitride High-k Dielectric Alloys for Advanced Microelectronic Applications; Chemical and Electrical Characterizations.” 2005. Web. 15 Aug 2020.

Vancouver:

Ju B. Properties of Zr Silicate and Zr-Si Oxynitride High-k Dielectric Alloys for Advanced Microelectronic Applications; Chemical and Electrical Characterizations. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Aug 15]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5469.

Council of Science Editors:

Ju B. Properties of Zr Silicate and Zr-Si Oxynitride High-k Dielectric Alloys for Advanced Microelectronic Applications; Chemical and Electrical Characterizations. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5469


Vanderbilt University

17. Felix, James Andrew. The Radiation Response and Long Term Reliability of High-k gate dielectrics.

Degree: PhD, Electrical Engineering, 2003, Vanderbilt University

 The radiation response and long term reliability of alternative gate dielectrics will play a critical role in determining the viability of these materials for use… (more)

Subjects/Keywords: reliability; radiation; alternative gate dielectric; high-k

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APA (6th Edition):

Felix, J. A. (2003). The Radiation Response and Long Term Reliability of High-k gate dielectrics. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12032003-143515/ ;

Chicago Manual of Style (16th Edition):

Felix, James Andrew. “The Radiation Response and Long Term Reliability of High-k gate dielectrics.” 2003. Doctoral Dissertation, Vanderbilt University. Accessed August 15, 2020. http://etd.library.vanderbilt.edu/available/etd-12032003-143515/ ;.

MLA Handbook (7th Edition):

Felix, James Andrew. “The Radiation Response and Long Term Reliability of High-k gate dielectrics.” 2003. Web. 15 Aug 2020.

Vancouver:

Felix JA. The Radiation Response and Long Term Reliability of High-k gate dielectrics. [Internet] [Doctoral dissertation]. Vanderbilt University; 2003. [cited 2020 Aug 15]. Available from: http://etd.library.vanderbilt.edu/available/etd-12032003-143515/ ;.

Council of Science Editors:

Felix JA. The Radiation Response and Long Term Reliability of High-k gate dielectrics. [Doctoral Dissertation]. Vanderbilt University; 2003. Available from: http://etd.library.vanderbilt.edu/available/etd-12032003-143515/ ;

18. Ceballos Sanchez, Oscar. Stabilité thermique de structures de type TiN/ZrO2/InGaAs : Thermal stability of structures such as TiN/ZrO2/InGaAs.

Degree: Docteur es, Physique des matériaux, 2015, Université Grenoble Alpes (ComUE); Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (Mexico)

 Les semiconducteurs composés III-V, et en particulier l’InGaAs, sont considéréscomme une alternative attractive pour remplacer le Silicium (Si) habituellement utilisépour former le canal dans les… (more)

Subjects/Keywords: ARXPS; InGaAs; Diélectrique haute permittivité; Grille métallique; HRTEM; TiN; ARXPS; InGaAs; High-k; Dielectric; Metal gate; HRTEM; TiN; 530

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ceballos Sanchez, O. (2015). Stabilité thermique de structures de type TiN/ZrO2/InGaAs : Thermal stability of structures such as TiN/ZrO2/InGaAs. (Doctoral Dissertation). Université Grenoble Alpes (ComUE); Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (Mexico). Retrieved from http://www.theses.fr/2015GREAY027

Chicago Manual of Style (16th Edition):

Ceballos Sanchez, Oscar. “Stabilité thermique de structures de type TiN/ZrO2/InGaAs : Thermal stability of structures such as TiN/ZrO2/InGaAs.” 2015. Doctoral Dissertation, Université Grenoble Alpes (ComUE); Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (Mexico). Accessed August 15, 2020. http://www.theses.fr/2015GREAY027.

MLA Handbook (7th Edition):

Ceballos Sanchez, Oscar. “Stabilité thermique de structures de type TiN/ZrO2/InGaAs : Thermal stability of structures such as TiN/ZrO2/InGaAs.” 2015. Web. 15 Aug 2020.

Vancouver:

Ceballos Sanchez O. Stabilité thermique de structures de type TiN/ZrO2/InGaAs : Thermal stability of structures such as TiN/ZrO2/InGaAs. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (Mexico); 2015. [cited 2020 Aug 15]. Available from: http://www.theses.fr/2015GREAY027.

Council of Science Editors:

Ceballos Sanchez O. Stabilité thermique de structures de type TiN/ZrO2/InGaAs : Thermal stability of structures such as TiN/ZrO2/InGaAs. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (Mexico); 2015. Available from: http://www.theses.fr/2015GREAY027


Université de Grenoble

19. Baudot, Sylvain. Elaboration et caractérisation des grilles métalliques pour les technologiesCMOS 32 / 28 nm à base de diélectrique haute permittivité : Metal gate manufacturing and characterization for high-k based 32/28nm CMOS technologies.

Degree: Docteur es, Nano électronique et nano technologies, 2012, Université de Grenoble

Cette thèse porte sur l'élaboration et la caractérisation des grilles métalliques en TiN, aluminium et lanthane pour les technologies CMOS gate-first à base d'oxyde high-k… (more)

Subjects/Keywords: CMOS; Grille métallique; Diélectrique high-k; TiN; Lanthane; Aluminium; CMOS; Metal gate; High-k dielectric; TiN; Lanthanum; Aluminum; 620

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APA (6th Edition):

Baudot, S. (2012). Elaboration et caractérisation des grilles métalliques pour les technologiesCMOS 32 / 28 nm à base de diélectrique haute permittivité : Metal gate manufacturing and characterization for high-k based 32/28nm CMOS technologies. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2012GRENT122

Chicago Manual of Style (16th Edition):

Baudot, Sylvain. “Elaboration et caractérisation des grilles métalliques pour les technologiesCMOS 32 / 28 nm à base de diélectrique haute permittivité : Metal gate manufacturing and characterization for high-k based 32/28nm CMOS technologies.” 2012. Doctoral Dissertation, Université de Grenoble. Accessed August 15, 2020. http://www.theses.fr/2012GRENT122.

MLA Handbook (7th Edition):

Baudot, Sylvain. “Elaboration et caractérisation des grilles métalliques pour les technologiesCMOS 32 / 28 nm à base de diélectrique haute permittivité : Metal gate manufacturing and characterization for high-k based 32/28nm CMOS technologies.” 2012. Web. 15 Aug 2020.

Vancouver:

Baudot S. Elaboration et caractérisation des grilles métalliques pour les technologiesCMOS 32 / 28 nm à base de diélectrique haute permittivité : Metal gate manufacturing and characterization for high-k based 32/28nm CMOS technologies. [Internet] [Doctoral dissertation]. Université de Grenoble; 2012. [cited 2020 Aug 15]. Available from: http://www.theses.fr/2012GRENT122.

Council of Science Editors:

Baudot S. Elaboration et caractérisation des grilles métalliques pour les technologiesCMOS 32 / 28 nm à base de diélectrique haute permittivité : Metal gate manufacturing and characterization for high-k based 32/28nm CMOS technologies. [Doctoral Dissertation]. Université de Grenoble; 2012. Available from: http://www.theses.fr/2012GRENT122

20. CAO YU. GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS.

Degree: 2003, National University of Singapore

Subjects/Keywords: gate oxide; dielectric breakdown; dielectric breakdown induced epitaxy (DBIE); simulation

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APA (6th Edition):

YU, C. (2003). GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS. (Thesis). National University of Singapore. Retrieved from https://scholarbank.nus.edu.sg/handle/10635/154026

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

YU, CAO. “GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS.” 2003. Thesis, National University of Singapore. Accessed August 15, 2020. https://scholarbank.nus.edu.sg/handle/10635/154026.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

YU, CAO. “GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS.” 2003. Web. 15 Aug 2020.

Vancouver:

YU C. GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS. [Internet] [Thesis]. National University of Singapore; 2003. [cited 2020 Aug 15]. Available from: https://scholarbank.nus.edu.sg/handle/10635/154026.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

YU C. GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS. [Thesis]. National University of Singapore; 2003. Available from: https://scholarbank.nus.edu.sg/handle/10635/154026

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Aviñó Salvadó, Oriol. Contribution to the study of the SiC MOSFETs gate oxide : Contribution à l'étude de la robustesse de l'oxyde de grille des MOSFET en SiC.

Degree: Docteur es, Génie électrique, 2018, Lyon

Les MOSFET en SiC sont appelées à remplacer les IGBT en Silicium pour des applications de demandant une plus forte vitesse de commutation. Cependant, les… (more)

Subjects/Keywords: Transistor bipolaire à grille isolée - IGBT; MOSFET en SiC; SiO2; Time-Dependent dielectric breakdown - TDDB; High Temperature Gate Bias - HTGB; Oxyde; Diode intrinsèque; Electronique de puissance; Insulated Gate Bipolar Transistor - IGBT; SiC MOSFET; SiO2; Time-Dependent dielectric breakdown - TDDB; High Temperature Gate Bias - HTGB; Intrinsic diode; Power Electronics; 621.317 072

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APA (6th Edition):

Aviñó Salvadó, O. (2018). Contribution to the study of the SiC MOSFETs gate oxide : Contribution à l'étude de la robustesse de l'oxyde de grille des MOSFET en SiC. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2018LYSEI110

Chicago Manual of Style (16th Edition):

Aviñó Salvadó, Oriol. “Contribution to the study of the SiC MOSFETs gate oxide : Contribution à l'étude de la robustesse de l'oxyde de grille des MOSFET en SiC.” 2018. Doctoral Dissertation, Lyon. Accessed August 15, 2020. http://www.theses.fr/2018LYSEI110.

MLA Handbook (7th Edition):

Aviñó Salvadó, Oriol. “Contribution to the study of the SiC MOSFETs gate oxide : Contribution à l'étude de la robustesse de l'oxyde de grille des MOSFET en SiC.” 2018. Web. 15 Aug 2020.

Vancouver:

Aviñó Salvadó O. Contribution to the study of the SiC MOSFETs gate oxide : Contribution à l'étude de la robustesse de l'oxyde de grille des MOSFET en SiC. [Internet] [Doctoral dissertation]. Lyon; 2018. [cited 2020 Aug 15]. Available from: http://www.theses.fr/2018LYSEI110.

Council of Science Editors:

Aviñó Salvadó O. Contribution to the study of the SiC MOSFETs gate oxide : Contribution à l'étude de la robustesse de l'oxyde de grille des MOSFET en SiC. [Doctoral Dissertation]. Lyon; 2018. Available from: http://www.theses.fr/2018LYSEI110


North Carolina State University

22. Young, Chadwin Delin. Charge Trapping Characterization Methodology for the Evaluation of Hafnium-based Gate Dielectric Film Systems.

Degree: PhD, Electrical Engineering, 2003, North Carolina State University

 Scaling of advanced CMOS device dimensions, as set forth for future technology nodes by the International Technology Roadmap for Semiconductors (ITRS), will require reduction of… (more)

Subjects/Keywords: high-k; gate dielectric; Hafnium; charge trapping; mobility; reliability; charge pumping; fast transient

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APA (6th Edition):

Young, C. D. (2003). Charge Trapping Characterization Methodology for the Evaluation of Hafnium-based Gate Dielectric Film Systems. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3198

Chicago Manual of Style (16th Edition):

Young, Chadwin Delin. “Charge Trapping Characterization Methodology for the Evaluation of Hafnium-based Gate Dielectric Film Systems.” 2003. Doctoral Dissertation, North Carolina State University. Accessed August 15, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3198.

MLA Handbook (7th Edition):

Young, Chadwin Delin. “Charge Trapping Characterization Methodology for the Evaluation of Hafnium-based Gate Dielectric Film Systems.” 2003. Web. 15 Aug 2020.

Vancouver:

Young CD. Charge Trapping Characterization Methodology for the Evaluation of Hafnium-based Gate Dielectric Film Systems. [Internet] [Doctoral dissertation]. North Carolina State University; 2003. [cited 2020 Aug 15]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3198.

Council of Science Editors:

Young CD. Charge Trapping Characterization Methodology for the Evaluation of Hafnium-based Gate Dielectric Film Systems. [Doctoral Dissertation]. North Carolina State University; 2003. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3198


North Carolina State University

23. Barua, Dipak. Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution.

Degree: MS, Chemical Engineering, 2005, North Carolina State University

 Thin films of metals and metal-oxides are deposited in batch (Chemical Fluid Deposition) and cyclic (Atomic Layer Deposition) processes from metal organic precursors in supercritical… (more)

Subjects/Keywords: CFD; Gate Metal; ALD; Sc CO2; Thin Film Deposition; High k Dielectric

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APA (6th Edition):

Barua, D. (2005). Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/628

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Barua, Dipak. “Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution.” 2005. Thesis, North Carolina State University. Accessed August 15, 2020. http://www.lib.ncsu.edu/resolver/1840.16/628.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Barua, Dipak. “Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution.” 2005. Web. 15 Aug 2020.

Vancouver:

Barua D. Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution. [Internet] [Thesis]. North Carolina State University; 2005. [cited 2020 Aug 15]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/628.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Barua D. Deposition of Metal and Metal Oxide Thin Films from Metal Organic Precursors in Supercritical Carbon Dioxide Solution. [Thesis]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/628

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

24. Chan, Tsung-Chieh. Study of High Performance Low-Temperature Poly-Si Thin-Film Transistors.

Degree: Master, Electrical Engineering, 2015, NSYSU

 High performance low-temperature poly-Si thin film transistors (LTPS-TFTs) have been intensively investigated for the application of the active matrix liquid-phase crystal displays. In this article,… (more)

Subjects/Keywords: Metal-induced lateral crystallization (MILC); High-k Gate Dielectric; short channel effect (SCE); Solid Phase Crystallization (SPC); low-temperature poly-Si thin film transistors (LTPS-TFTs)

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APA (6th Edition):

Chan, T. (2015). Study of High Performance Low-Temperature Poly-Si Thin-Film Transistors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617115-162202

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chan, Tsung-Chieh. “Study of High Performance Low-Temperature Poly-Si Thin-Film Transistors.” 2015. Thesis, NSYSU. Accessed August 15, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617115-162202.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chan, Tsung-Chieh. “Study of High Performance Low-Temperature Poly-Si Thin-Film Transistors.” 2015. Web. 15 Aug 2020.

Vancouver:

Chan T. Study of High Performance Low-Temperature Poly-Si Thin-Film Transistors. [Internet] [Thesis]. NSYSU; 2015. [cited 2020 Aug 15]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617115-162202.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chan T. Study of High Performance Low-Temperature Poly-Si Thin-Film Transistors. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617115-162202

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

25. WANG XINPENG. Advanced gate stacks for nano-scale CMOS technology.

Degree: 2008, National University of Singapore

Subjects/Keywords: CMOS; High-k Dielectric; Metal Gate; Work Function Tuning; Integration; Reliability

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APA (6th Edition):

XINPENG, W. (2008). Advanced gate stacks for nano-scale CMOS technology. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/16061

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

XINPENG, WANG. “Advanced gate stacks for nano-scale CMOS technology.” 2008. Thesis, National University of Singapore. Accessed August 15, 2020. http://scholarbank.nus.edu.sg/handle/10635/16061.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

XINPENG, WANG. “Advanced gate stacks for nano-scale CMOS technology.” 2008. Web. 15 Aug 2020.

Vancouver:

XINPENG W. Advanced gate stacks for nano-scale CMOS technology. [Internet] [Thesis]. National University of Singapore; 2008. [cited 2020 Aug 15]. Available from: http://scholarbank.nus.edu.sg/handle/10635/16061.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

XINPENG W. Advanced gate stacks for nano-scale CMOS technology. [Thesis]. National University of Singapore; 2008. Available from: http://scholarbank.nus.edu.sg/handle/10635/16061

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

26. ZHANG QINGCHUN. Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure.

Degree: 2007, National University of Singapore

Subjects/Keywords: Germanium; MOSFET; High-κ gate dielectric; Junction; Laser annealing; Nickel Germanide

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APA (6th Edition):

QINGCHUN, Z. (2007). Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/16234

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

QINGCHUN, ZHANG. “Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure.” 2007. Thesis, National University of Singapore. Accessed August 15, 2020. http://scholarbank.nus.edu.sg/handle/10635/16234.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

QINGCHUN, ZHANG. “Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure.” 2007. Web. 15 Aug 2020.

Vancouver:

QINGCHUN Z. Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure. [Internet] [Thesis]. National University of Singapore; 2007. [cited 2020 Aug 15]. Available from: http://scholarbank.nus.edu.sg/handle/10635/16234.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

QINGCHUN Z. Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure. [Thesis]. National University of Singapore; 2007. Available from: http://scholarbank.nus.edu.sg/handle/10635/16234

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Central Florida

27. Oswal, Ritika. Investigation of different dielectric materials as gate insulator for MOSFETs.

Degree: 2014, University of Central Florida

 The scaling of semiconductor transistors has led to a decrease in thickness of the silicon dioxide layer used as gate dielectric. The thickness of the… (more)

Subjects/Keywords: Dielectric materials; gate insulator; fabrication of mosfet; Electrical and Computer Engineering; Electrical and Electronics; Engineering; Dissertations, Academic  – Engineering and Computer Science; Engineering and Computer Science  – Dissertations, Academic

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APA (6th Edition):

Oswal, R. (2014). Investigation of different dielectric materials as gate insulator for MOSFETs. (Masters Thesis). University of Central Florida. Retrieved from https://stars.library.ucf.edu/etd/4511

Chicago Manual of Style (16th Edition):

Oswal, Ritika. “Investigation of different dielectric materials as gate insulator for MOSFETs.” 2014. Masters Thesis, University of Central Florida. Accessed August 15, 2020. https://stars.library.ucf.edu/etd/4511.

MLA Handbook (7th Edition):

Oswal, Ritika. “Investigation of different dielectric materials as gate insulator for MOSFETs.” 2014. Web. 15 Aug 2020.

Vancouver:

Oswal R. Investigation of different dielectric materials as gate insulator for MOSFETs. [Internet] [Masters thesis]. University of Central Florida; 2014. [cited 2020 Aug 15]. Available from: https://stars.library.ucf.edu/etd/4511.

Council of Science Editors:

Oswal R. Investigation of different dielectric materials as gate insulator for MOSFETs. [Masters Thesis]. University of Central Florida; 2014. Available from: https://stars.library.ucf.edu/etd/4511


Indian Institute of Science

28. Mondal, Sandip. Fully Solution Processed Flash Memory.

Degree: PhD, Faculty of Science, 2018, Indian Institute of Science

 The field of advanced solution processed spin-coated electronics has rapidly expanded over the last few decades towards the development of low-cost, large area and low… (more)

Subjects/Keywords: Memory Devices; Memory Devices - Classification; Floating Gate Memory; DNA Based Memory; Polymer Charge Trapping Memory; Dielectrics; Aluminium Oxide Phosphate; Flash Memory Device; Titanium Dioxide Dielectric; Thin Film Transistors (TFT); Physics

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mondal, S. (2018). Fully Solution Processed Flash Memory. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/4131

Chicago Manual of Style (16th Edition):

Mondal, Sandip. “Fully Solution Processed Flash Memory.” 2018. Doctoral Dissertation, Indian Institute of Science. Accessed August 15, 2020. http://etd.iisc.ac.in/handle/2005/4131.

MLA Handbook (7th Edition):

Mondal, Sandip. “Fully Solution Processed Flash Memory.” 2018. Web. 15 Aug 2020.

Vancouver:

Mondal S. Fully Solution Processed Flash Memory. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2018. [cited 2020 Aug 15]. Available from: http://etd.iisc.ac.in/handle/2005/4131.

Council of Science Editors:

Mondal S. Fully Solution Processed Flash Memory. [Doctoral Dissertation]. Indian Institute of Science; 2018. Available from: http://etd.iisc.ac.in/handle/2005/4131


Texas A&M University

29. Lu, Jiang. Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology.

Degree: PhD, Chemical Engineering, 2007, Texas A&M University

 A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-doped TaOx), has been studied for the application of the future generation metal-oxidesemiconductor field effect… (more)

Subjects/Keywords: high-k; gate dielectric; metal gate electrode; Tantalum Oxide; Hafnium Oxide; Doped Oxide; Sputtering Deposition

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lu, J. (2007). Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/4714

Chicago Manual of Style (16th Edition):

Lu, Jiang. “Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology.” 2007. Doctoral Dissertation, Texas A&M University. Accessed August 15, 2020. http://hdl.handle.net/1969.1/4714.

MLA Handbook (7th Edition):

Lu, Jiang. “Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology.” 2007. Web. 15 Aug 2020.

Vancouver:

Lu J. Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology. [Internet] [Doctoral dissertation]. Texas A&M University; 2007. [cited 2020 Aug 15]. Available from: http://hdl.handle.net/1969.1/4714.

Council of Science Editors:

Lu J. Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology. [Doctoral Dissertation]. Texas A&M University; 2007. Available from: http://hdl.handle.net/1969.1/4714

30. HOU YONG TIAN. Quantum modeling and characterization of deep submicron MOSFETs.

Degree: 2004, National University of Singapore

Subjects/Keywords: CMOS devices; Quantum Mechanical Effects; Direct Tunneling Current; Ultrathin Gate Oxide; High Dielectric Constant Dielectrics; Metal Gate.

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APA (6th Edition):

TIAN, H. Y. (2004). Quantum modeling and characterization of deep submicron MOSFETs. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/14015

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

TIAN, HOU YONG. “Quantum modeling and characterization of deep submicron MOSFETs.” 2004. Thesis, National University of Singapore. Accessed August 15, 2020. http://scholarbank.nus.edu.sg/handle/10635/14015.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

TIAN, HOU YONG. “Quantum modeling and characterization of deep submicron MOSFETs.” 2004. Web. 15 Aug 2020.

Vancouver:

TIAN HY. Quantum modeling and characterization of deep submicron MOSFETs. [Internet] [Thesis]. National University of Singapore; 2004. [cited 2020 Aug 15]. Available from: http://scholarbank.nus.edu.sg/handle/10635/14015.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

TIAN HY. Quantum modeling and characterization of deep submicron MOSFETs. [Thesis]. National University of Singapore; 2004. Available from: http://scholarbank.nus.edu.sg/handle/10635/14015

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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