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You searched for subject:(gallium). Showing records 1 – 30 of 973 total matches.

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University of British Columbia

1. Valic, Marko Ivan. Nuclear magnetic resonance study of single crystals of gallium metal .

Degree: 1970, University of British Columbia

 The nuclear magnetic resonance spectrum of gallium metal has been investigated in single crystal specimens in both low and high magnetic fields from 4.2°K to… (more)

Subjects/Keywords: Gallium

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APA (6th Edition):

Valic, M. I. (1970). Nuclear magnetic resonance study of single crystals of gallium metal . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/35039

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Valic, Marko Ivan. “Nuclear magnetic resonance study of single crystals of gallium metal .” 1970. Thesis, University of British Columbia. Accessed November 19, 2017. http://hdl.handle.net/2429/35039.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Valic, Marko Ivan. “Nuclear magnetic resonance study of single crystals of gallium metal .” 1970. Web. 19 Nov 2017.

Vancouver:

Valic MI. Nuclear magnetic resonance study of single crystals of gallium metal . [Internet] [Thesis]. University of British Columbia; 1970. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/2429/35039.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Valic MI. Nuclear magnetic resonance study of single crystals of gallium metal . [Thesis]. University of British Columbia; 1970. Available from: http://hdl.handle.net/2429/35039

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of British Columbia

2. Penland, Allen David. Gallazanes and related compounds .

Degree: 1971, University of British Columbia

 This work involved preparation of cyclical dimeric or trimeric gallazanes of general formula: (RNHGaH₂)[subscript n omitted] where n= 2 or 3 and R = Et,… (more)

Subjects/Keywords: Gallium

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APA (6th Edition):

Penland, A. D. (1971). Gallazanes and related compounds . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/33243

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Penland, Allen David. “Gallazanes and related compounds .” 1971. Thesis, University of British Columbia. Accessed November 19, 2017. http://hdl.handle.net/2429/33243.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Penland, Allen David. “Gallazanes and related compounds .” 1971. Web. 19 Nov 2017.

Vancouver:

Penland AD. Gallazanes and related compounds . [Internet] [Thesis]. University of British Columbia; 1971. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/2429/33243.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Penland AD. Gallazanes and related compounds . [Thesis]. University of British Columbia; 1971. Available from: http://hdl.handle.net/2429/33243

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

3. Quinn, Alexander C. Microwave methods of measuring resistivity of gallium arsenide.

Degree: MS, Electrical Engineering, 1965, Oregon State University

 This paper is concerned with the determination of gallium arsenide resistivity by measurement of attenuation of microwave energy at 7500 megacycles transmitted through a slice.… (more)

Subjects/Keywords: Gallium

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APA (6th Edition):

Quinn, A. C. (1965). Microwave methods of measuring resistivity of gallium arsenide. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/47642

Chicago Manual of Style (16th Edition):

Quinn, Alexander C. “Microwave methods of measuring resistivity of gallium arsenide.” 1965. Masters Thesis, Oregon State University. Accessed November 19, 2017. http://hdl.handle.net/1957/47642.

MLA Handbook (7th Edition):

Quinn, Alexander C. “Microwave methods of measuring resistivity of gallium arsenide.” 1965. Web. 19 Nov 2017.

Vancouver:

Quinn AC. Microwave methods of measuring resistivity of gallium arsenide. [Internet] [Masters thesis]. Oregon State University; 1965. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/1957/47642.

Council of Science Editors:

Quinn AC. Microwave methods of measuring resistivity of gallium arsenide. [Masters Thesis]. Oregon State University; 1965. Available from: http://hdl.handle.net/1957/47642


Oregon State University

4. Matsuo, Samuel Seiji. Deterioration of gallium arsenide diodes.

Degree: MS, Electrical and Electronics Engineering, 1965, Oregon State University

 Changes in the diode characteristics of three different types of diodes were studied. These were point-contact, bonded and zinc-diffused diodes. The parameters in which measurable… (more)

Subjects/Keywords: Gallium

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APA (6th Edition):

Matsuo, S. S. (1965). Deterioration of gallium arsenide diodes. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/48083

Chicago Manual of Style (16th Edition):

Matsuo, Samuel Seiji. “Deterioration of gallium arsenide diodes.” 1965. Masters Thesis, Oregon State University. Accessed November 19, 2017. http://hdl.handle.net/1957/48083.

MLA Handbook (7th Edition):

Matsuo, Samuel Seiji. “Deterioration of gallium arsenide diodes.” 1965. Web. 19 Nov 2017.

Vancouver:

Matsuo SS. Deterioration of gallium arsenide diodes. [Internet] [Masters thesis]. Oregon State University; 1965. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/1957/48083.

Council of Science Editors:

Matsuo SS. Deterioration of gallium arsenide diodes. [Masters Thesis]. Oregon State University; 1965. Available from: http://hdl.handle.net/1957/48083


Texas Tech University

5. Drake, George Wilson. Some physical properties of gallium.

Degree: Physics, 1932, Texas Tech University

Subjects/Keywords: Gallium

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APA (6th Edition):

Drake, G. W. (1932). Some physical properties of gallium. (Masters Thesis). Texas Tech University. Retrieved from http://hdl.handle.net/2346/22585

Chicago Manual of Style (16th Edition):

Drake, George Wilson. “Some physical properties of gallium.” 1932. Masters Thesis, Texas Tech University. Accessed November 19, 2017. http://hdl.handle.net/2346/22585.

MLA Handbook (7th Edition):

Drake, George Wilson. “Some physical properties of gallium.” 1932. Web. 19 Nov 2017.

Vancouver:

Drake GW. Some physical properties of gallium. [Internet] [Masters thesis]. Texas Tech University; 1932. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/2346/22585.

Council of Science Editors:

Drake GW. Some physical properties of gallium. [Masters Thesis]. Texas Tech University; 1932. Available from: http://hdl.handle.net/2346/22585


Nelson Mandela Metropolitan University

6. Janse van Vuuren, Arno. Radiation damage in GaAs and SiC.

Degree: MSc, Faculty of Science, 2011, Nelson Mandela Metropolitan University

 In this dissertation the microstructure and hardness of phosphorous implanted SiC and neutron irradiated SiC and GaAs have been investigated. SiC is important due to… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Janse van Vuuren, A. (2011). Radiation damage in GaAs and SiC. (Masters Thesis). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/1477

Chicago Manual of Style (16th Edition):

Janse van Vuuren, Arno. “Radiation damage in GaAs and SiC.” 2011. Masters Thesis, Nelson Mandela Metropolitan University. Accessed November 19, 2017. http://hdl.handle.net/10948/1477.

MLA Handbook (7th Edition):

Janse van Vuuren, Arno. “Radiation damage in GaAs and SiC.” 2011. Web. 19 Nov 2017.

Vancouver:

Janse van Vuuren A. Radiation damage in GaAs and SiC. [Internet] [Masters thesis]. Nelson Mandela Metropolitan University; 2011. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/10948/1477.

Council of Science Editors:

Janse van Vuuren A. Radiation damage in GaAs and SiC. [Masters Thesis]. Nelson Mandela Metropolitan University; 2011. Available from: http://hdl.handle.net/10948/1477


Victoria University of Wellington

7. Steenbergen, Krista Grace. Modelling the Melting of Gallium Clusters: A Path to Understanding Molecular Solids.

Degree: 2013, Victoria University of Wellington

Gallium is a molecular solid with many unique properties. Comprised of Ga2 dimers but exhibiting metal-like electronic characteristics, gallium may be deemed a molecular metal.… (more)

Subjects/Keywords: Gallium; Clusters; Melting

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APA (6th Edition):

Steenbergen, K. G. (2013). Modelling the Melting of Gallium Clusters: A Path to Understanding Molecular Solids. (Doctoral Dissertation). Victoria University of Wellington. Retrieved from http://hdl.handle.net/10063/2668

Chicago Manual of Style (16th Edition):

Steenbergen, Krista Grace. “Modelling the Melting of Gallium Clusters: A Path to Understanding Molecular Solids.” 2013. Doctoral Dissertation, Victoria University of Wellington. Accessed November 19, 2017. http://hdl.handle.net/10063/2668.

MLA Handbook (7th Edition):

Steenbergen, Krista Grace. “Modelling the Melting of Gallium Clusters: A Path to Understanding Molecular Solids.” 2013. Web. 19 Nov 2017.

Vancouver:

Steenbergen KG. Modelling the Melting of Gallium Clusters: A Path to Understanding Molecular Solids. [Internet] [Doctoral dissertation]. Victoria University of Wellington; 2013. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/10063/2668.

Council of Science Editors:

Steenbergen KG. Modelling the Melting of Gallium Clusters: A Path to Understanding Molecular Solids. [Doctoral Dissertation]. Victoria University of Wellington; 2013. Available from: http://hdl.handle.net/10063/2668


Victoria University of Wellington

8. Payne, Constance E. Isotope geochemistry of gallium in hydrothermal systems.

Degree: 2016, Victoria University of Wellington

 Little is known about the isotope geochemistry of gallium in natural systems (Groot, 2009), with most information being limited to very early studies of gallium(more)

Subjects/Keywords: Gallium; Isotope; Hydrothermal

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APA (6th Edition):

Payne, C. E. (2016). Isotope geochemistry of gallium in hydrothermal systems. (Masters Thesis). Victoria University of Wellington. Retrieved from http://hdl.handle.net/10063/5554

Chicago Manual of Style (16th Edition):

Payne, Constance E. “Isotope geochemistry of gallium in hydrothermal systems.” 2016. Masters Thesis, Victoria University of Wellington. Accessed November 19, 2017. http://hdl.handle.net/10063/5554.

MLA Handbook (7th Edition):

Payne, Constance E. “Isotope geochemistry of gallium in hydrothermal systems.” 2016. Web. 19 Nov 2017.

Vancouver:

Payne CE. Isotope geochemistry of gallium in hydrothermal systems. [Internet] [Masters thesis]. Victoria University of Wellington; 2016. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/10063/5554.

Council of Science Editors:

Payne CE. Isotope geochemistry of gallium in hydrothermal systems. [Masters Thesis]. Victoria University of Wellington; 2016. Available from: http://hdl.handle.net/10063/5554


Brno University of Technology

9. Mareš, Petr. Depozice Ga a GaN nanostruktur na křemíkový a grafenový substrát .

Degree: 2014, Brno University of Technology

 Tato diplomová práce se zabývá studiem vlastností Ga a GaN nanostruktur na grafenu. Teoretická část této práce popisuje základní vlastnosti grafenu a GaN a problematiku… (more)

Subjects/Keywords: grafen; nitrid gallia; gallium; SERS; nitridace; graphene; gallium nitride; gallium; SERS; nitridation

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APA (6th Edition):

Mareš, P. (2014). Depozice Ga a GaN nanostruktur na křemíkový a grafenový substrát . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/34114

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mareš, Petr. “Depozice Ga a GaN nanostruktur na křemíkový a grafenový substrát .” 2014. Thesis, Brno University of Technology. Accessed November 19, 2017. http://hdl.handle.net/11012/34114.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mareš, Petr. “Depozice Ga a GaN nanostruktur na křemíkový a grafenový substrát .” 2014. Web. 19 Nov 2017.

Vancouver:

Mareš P. Depozice Ga a GaN nanostruktur na křemíkový a grafenový substrát . [Internet] [Thesis]. Brno University of Technology; 2014. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/11012/34114.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mareš P. Depozice Ga a GaN nanostruktur na křemíkový a grafenový substrát . [Thesis]. Brno University of Technology; 2014. Available from: http://hdl.handle.net/11012/34114

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


West Virginia University

10. Yang, Nanying, 1978-. Growth and characterization of GaN quantum dots.

Degree: 2006, West Virginia University

 III-Nitride Semiconductor Materials are highly promising for the fabrications of optical devices especially in UV region. And Quantum Dots structure is theoretically predicted to have… (more)

Subjects/Keywords: Quantum dots.; Semiconductors.; Gallium nitride.

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APA (6th Edition):

Yang, Nanying, 1. (2006). Growth and characterization of GaN quantum dots. (Thesis). West Virginia University. Retrieved from http://wvuscholar.wvu.edu:8881/R/?func=dbin-jump-full&object_id=21069

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Nanying, 1978-. “Growth and characterization of GaN quantum dots.” 2006. Thesis, West Virginia University. Accessed November 19, 2017. http://wvuscholar.wvu.edu:8881/R/?func=dbin-jump-full&object_id=21069.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Nanying, 1978-. “Growth and characterization of GaN quantum dots.” 2006. Web. 19 Nov 2017.

Vancouver:

Yang, Nanying 1. Growth and characterization of GaN quantum dots. [Internet] [Thesis]. West Virginia University; 2006. [cited 2017 Nov 19]. Available from: http://wvuscholar.wvu.edu:8881/R/?func=dbin-jump-full&object_id=21069.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang, Nanying 1. Growth and characterization of GaN quantum dots. [Thesis]. West Virginia University; 2006. Available from: http://wvuscholar.wvu.edu:8881/R/?func=dbin-jump-full&object_id=21069

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


The Ohio State University

11. Waldorf, David Leslie. A Study of relaxation processes in high purity gallium at low temperatures.

Degree: PhD, Graduate School, 1969, The Ohio State University

Subjects/Keywords: Physics; Gallium

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APA (6th Edition):

Waldorf, D. L. (1969). A Study of relaxation processes in high purity gallium at low temperatures. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1486652373261286

Chicago Manual of Style (16th Edition):

Waldorf, David Leslie. “A Study of relaxation processes in high purity gallium at low temperatures.” 1969. Doctoral Dissertation, The Ohio State University. Accessed November 19, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1486652373261286.

MLA Handbook (7th Edition):

Waldorf, David Leslie. “A Study of relaxation processes in high purity gallium at low temperatures.” 1969. Web. 19 Nov 2017.

Vancouver:

Waldorf DL. A Study of relaxation processes in high purity gallium at low temperatures. [Internet] [Doctoral dissertation]. The Ohio State University; 1969. [cited 2017 Nov 19]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486652373261286.

Council of Science Editors:

Waldorf DL. A Study of relaxation processes in high purity gallium at low temperatures. [Doctoral Dissertation]. The Ohio State University; 1969. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486652373261286


Cornell University

12. Brown, Richard. Advanced Dielectrics For Gallium Nitride Power Electronics .

Degree: 2011, Cornell University

 This dissertation details the synthesis, characterization, and application of low-pressure chemical vapor deposited (LPCVD) Aluminum Silicon Nitride (Al x Siy Nz ) dielectrics to AlGaN/GaN… (more)

Subjects/Keywords: Gallium Nitride; hemt; Dielectric

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APA (6th Edition):

Brown, R. (2011). Advanced Dielectrics For Gallium Nitride Power Electronics . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/33475

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Brown, Richard. “Advanced Dielectrics For Gallium Nitride Power Electronics .” 2011. Thesis, Cornell University. Accessed November 19, 2017. http://hdl.handle.net/1813/33475.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Brown, Richard. “Advanced Dielectrics For Gallium Nitride Power Electronics .” 2011. Web. 19 Nov 2017.

Vancouver:

Brown R. Advanced Dielectrics For Gallium Nitride Power Electronics . [Internet] [Thesis]. Cornell University; 2011. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/1813/33475.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Brown R. Advanced Dielectrics For Gallium Nitride Power Electronics . [Thesis]. Cornell University; 2011. Available from: http://hdl.handle.net/1813/33475

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

13. Hautakangas, Sami. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.

Degree: 2005, Helsinki University of Technology

The effects of impurity atoms as well as various growth methods to the formation of vacancy type defects in gallium nitride (GaN) have been studied… (more)

Subjects/Keywords: gallium nitride; positron annihilation; vacancy

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APA (6th Edition):

Hautakangas, S. (2005). Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2005/isbn9512276674/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hautakangas, Sami. “Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.” 2005. Thesis, Helsinki University of Technology. Accessed November 19, 2017. http://lib.tkk.fi/Diss/2005/isbn9512276674/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hautakangas, Sami. “Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.” 2005. Web. 19 Nov 2017.

Vancouver:

Hautakangas S. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. [Internet] [Thesis]. Helsinki University of Technology; 2005. [cited 2017 Nov 19]. Available from: http://lib.tkk.fi/Diss/2005/isbn9512276674/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hautakangas S. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. [Thesis]. Helsinki University of Technology; 2005. Available from: http://lib.tkk.fi/Diss/2005/isbn9512276674/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Nelson Mandela Metropolitan University

14. Murape, Davison Munyaradzi. On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb.

Degree: PhD, Faculty of Science, 2014, Nelson Mandela Metropolitan University

 Since the development of the transistor in the Bell Telephone Laboratories in 1948 [78], the semiconductor industry has transformed the world we live in. It… (more)

Subjects/Keywords: Gallium arsenide semiconductors; Electronics

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APA (6th Edition):

Murape, D. M. (2014). On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb. (Doctoral Dissertation). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/d1020763

Chicago Manual of Style (16th Edition):

Murape, Davison Munyaradzi. “On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb.” 2014. Doctoral Dissertation, Nelson Mandela Metropolitan University. Accessed November 19, 2017. http://hdl.handle.net/10948/d1020763.

MLA Handbook (7th Edition):

Murape, Davison Munyaradzi. “On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb.” 2014. Web. 19 Nov 2017.

Vancouver:

Murape DM. On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb. [Internet] [Doctoral dissertation]. Nelson Mandela Metropolitan University; 2014. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/10948/d1020763.

Council of Science Editors:

Murape DM. On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb. [Doctoral Dissertation]. Nelson Mandela Metropolitan University; 2014. Available from: http://hdl.handle.net/10948/d1020763


Virginia Tech

15. Baker, Devon Scott. Understanding the Corrosion of Low-Voltage Al-Ga Anodes.

Degree: MS, Materials Science and Engineering, 2015, Virginia Tech

 Aluminum is an attractive metal for use as an anode in the cathodic protection of steels in seawater due to its low cost and high… (more)

Subjects/Keywords: aluminum; gallium; anodes; seawater; corrosion

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APA (6th Edition):

Baker, D. S. (2015). Understanding the Corrosion of Low-Voltage Al-Ga Anodes. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/53835

Chicago Manual of Style (16th Edition):

Baker, Devon Scott. “Understanding the Corrosion of Low-Voltage Al-Ga Anodes.” 2015. Masters Thesis, Virginia Tech. Accessed November 19, 2017. http://hdl.handle.net/10919/53835.

MLA Handbook (7th Edition):

Baker, Devon Scott. “Understanding the Corrosion of Low-Voltage Al-Ga Anodes.” 2015. Web. 19 Nov 2017.

Vancouver:

Baker DS. Understanding the Corrosion of Low-Voltage Al-Ga Anodes. [Internet] [Masters thesis]. Virginia Tech; 2015. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/10919/53835.

Council of Science Editors:

Baker DS. Understanding the Corrosion of Low-Voltage Al-Ga Anodes. [Masters Thesis]. Virginia Tech; 2015. Available from: http://hdl.handle.net/10919/53835


Rhodes University

16. Chauke, Vongani Portia. Synthesis, photochemical and photophysical properties of gallium and indium phthalocyanine derivatives.

Degree: Faculty of Science, Chemistry, 2008, Rhodes University

 The syntheses of octasubstituted and unsusbstitituted Gallium(III) chloride and indium(III) chloride phthalocyanines (GaPc and InPc), their photophysical, photochemical and nonlinear optical parameters are hereby presented.… (more)

Subjects/Keywords: Phthalocyanines; Photochemotherapy; Electrochemistry; Gallium; Indium

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APA (6th Edition):

Chauke, V. P. (2008). Synthesis, photochemical and photophysical properties of gallium and indium phthalocyanine derivatives. (Thesis). Rhodes University. Retrieved from http://hdl.handle.net/10962/d1005040

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chauke, Vongani Portia. “Synthesis, photochemical and photophysical properties of gallium and indium phthalocyanine derivatives.” 2008. Thesis, Rhodes University. Accessed November 19, 2017. http://hdl.handle.net/10962/d1005040.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chauke, Vongani Portia. “Synthesis, photochemical and photophysical properties of gallium and indium phthalocyanine derivatives.” 2008. Web. 19 Nov 2017.

Vancouver:

Chauke VP. Synthesis, photochemical and photophysical properties of gallium and indium phthalocyanine derivatives. [Internet] [Thesis]. Rhodes University; 2008. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/10962/d1005040.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chauke VP. Synthesis, photochemical and photophysical properties of gallium and indium phthalocyanine derivatives. [Thesis]. Rhodes University; 2008. Available from: http://hdl.handle.net/10962/d1005040

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Ruhr Universität Bochum

17. Halbherr, Markus. The coordination chemistry of Ga+ at gallium-rich transition-metal complexes.

Degree: 2011, Ruhr Universität Bochum

 Die vorliegende Dissertation befasst sich zum Einen mit der Synthese und Charakterisierung von Übergangskomplexen niedervalenter Gruppe13 Organyle ECp* (E = Al, Ga) in ungewöhnlichen Oxidationsstufen… (more)

Subjects/Keywords: Gallium; Übergangsmetall; Oxidationszahl; Aluminium; Anion

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APA (6th Edition):

Halbherr, M. (2011). The coordination chemistry of Ga+ at gallium-rich transition-metal complexes. (Thesis). Ruhr Universität Bochum. Retrieved from http://nbn-resolving.de/urn/resolver.pl?urn=urn:nbn:de:hbz:294-33581

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Halbherr, Markus. “The coordination chemistry of Ga+ at gallium-rich transition-metal complexes.” 2011. Thesis, Ruhr Universität Bochum. Accessed November 19, 2017. http://nbn-resolving.de/urn/resolver.pl?urn=urn:nbn:de:hbz:294-33581.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Halbherr, Markus. “The coordination chemistry of Ga+ at gallium-rich transition-metal complexes.” 2011. Web. 19 Nov 2017.

Vancouver:

Halbherr M. The coordination chemistry of Ga+ at gallium-rich transition-metal complexes. [Internet] [Thesis]. Ruhr Universität Bochum; 2011. [cited 2017 Nov 19]. Available from: http://nbn-resolving.de/urn/resolver.pl?urn=urn:nbn:de:hbz:294-33581.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Halbherr M. The coordination chemistry of Ga+ at gallium-rich transition-metal complexes. [Thesis]. Ruhr Universität Bochum; 2011. Available from: http://nbn-resolving.de/urn/resolver.pl?urn=urn:nbn:de:hbz:294-33581

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Hong Kong

18. Mak, Yick-hong, Giuseppe. Development of laser processes for nitride light-emitting diodes and its applications.

Degree: PhD, 2010, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Doctoral

Doctor of Philosophy

Advisors/Committee Members: Choi, HW, Lam, EYM.

Subjects/Keywords: Light emitting diodes.; Gallium nitride.

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APA (6th Edition):

Mak, Yick-hong, G. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Doctoral Dissertation). University of Hong Kong. Retrieved from Mak, Y. G. [麥易康]. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4587982 ; http://dx.doi.org/10.5353/th_b4587982

Chicago Manual of Style (16th Edition):

Mak, Yick-hong, Giuseppe. “Development of laser processes for nitride light-emitting diodes and its applications.” 2010. Doctoral Dissertation, University of Hong Kong. Accessed November 19, 2017. Mak, Y. G. [麥易康]. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4587982 ; http://dx.doi.org/10.5353/th_b4587982.

MLA Handbook (7th Edition):

Mak, Yick-hong, Giuseppe. “Development of laser processes for nitride light-emitting diodes and its applications.” 2010. Web. 19 Nov 2017.

Vancouver:

Mak, Yick-hong G. Development of laser processes for nitride light-emitting diodes and its applications. [Internet] [Doctoral dissertation]. University of Hong Kong; 2010. [cited 2017 Nov 19]. Available from: Mak, Y. G. [麥易康]. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4587982 ; http://dx.doi.org/10.5353/th_b4587982.

Council of Science Editors:

Mak, Yick-hong G. Development of laser processes for nitride light-emitting diodes and its applications. [Doctoral Dissertation]. University of Hong Kong; 2010. Available from: Mak, Y. G. [麥易康]. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4587982 ; http://dx.doi.org/10.5353/th_b4587982


University of Hong Kong

19. Zhang, Xuhui. GaN-based free-standing microdisks and nanostructures.

Degree: PhD, 2014, University of Hong Kong

 In this thesis, various micro- and nano-structures, fabricated by micro- and nanosphere lithography (NSL), were applied onto gallium nitride (GaN) based direct-bandgap semiconductors to develop… (more)

Subjects/Keywords: Nanostructures; Gallium nitride; Microstructure

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APA (6th Edition):

Zhang, X. (2014). GaN-based free-standing microdisks and nanostructures. (Doctoral Dissertation). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/207202

Chicago Manual of Style (16th Edition):

Zhang, Xuhui. “GaN-based free-standing microdisks and nanostructures.” 2014. Doctoral Dissertation, University of Hong Kong. Accessed November 19, 2017. http://hdl.handle.net/10722/207202.

MLA Handbook (7th Edition):

Zhang, Xuhui. “GaN-based free-standing microdisks and nanostructures.” 2014. Web. 19 Nov 2017.

Vancouver:

Zhang X. GaN-based free-standing microdisks and nanostructures. [Internet] [Doctoral dissertation]. University of Hong Kong; 2014. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/10722/207202.

Council of Science Editors:

Zhang X. GaN-based free-standing microdisks and nanostructures. [Doctoral Dissertation]. University of Hong Kong; 2014. Available from: http://hdl.handle.net/10722/207202


University of Hong Kong

20. Deng, Zhuo. Luminescence and transport processes of charge carriers in the GaxIn₁-xP/GaAs double-junction tandem solar cells.

Degree: PhD, 2014, University of Hong Kong

 Semiconductor multijunction solar cell is a cutting-edge photovoltaic technology aimed at developing a frontier solution to the clean energy demand and environmental problem. Due to… (more)

Subjects/Keywords: Gallium arsenide solar cells

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APA (6th Edition):

Deng, Z. (2014). Luminescence and transport processes of charge carriers in the GaxIn₁-xP/GaAs double-junction tandem solar cells. (Doctoral Dissertation). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/211134

Chicago Manual of Style (16th Edition):

Deng, Zhuo. “Luminescence and transport processes of charge carriers in the GaxIn₁-xP/GaAs double-junction tandem solar cells.” 2014. Doctoral Dissertation, University of Hong Kong. Accessed November 19, 2017. http://hdl.handle.net/10722/211134.

MLA Handbook (7th Edition):

Deng, Zhuo. “Luminescence and transport processes of charge carriers in the GaxIn₁-xP/GaAs double-junction tandem solar cells.” 2014. Web. 19 Nov 2017.

Vancouver:

Deng Z. Luminescence and transport processes of charge carriers in the GaxIn₁-xP/GaAs double-junction tandem solar cells. [Internet] [Doctoral dissertation]. University of Hong Kong; 2014. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/10722/211134.

Council of Science Editors:

Deng Z. Luminescence and transport processes of charge carriers in the GaxIn₁-xP/GaAs double-junction tandem solar cells. [Doctoral Dissertation]. University of Hong Kong; 2014. Available from: http://hdl.handle.net/10722/211134


University of Debrecen

21. Nagy, Ádám Kristóf. A Ga(III)-hidroxo- és -kloro-komplexek oldategyensúlyi vizsgálata .

Degree: DE – TEK – Természettudományi és Technológiai Kar – Kémiai Intézet, 2013, University of Debrecen

A Ga(III)-hidroxo- és -kloro-komplexek oldategyensúlyi vizsgálata NMR spektroszkópiás vizsgálattal. Advisors/Committee Members: Baranyai, Zsolt (advisor).

Subjects/Keywords: gallium; NMR

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APA (6th Edition):

Nagy, . K. (2013). A Ga(III)-hidroxo- és -kloro-komplexek oldategyensúlyi vizsgálata . (Thesis). University of Debrecen. Retrieved from http://hdl.handle.net/2437/177006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Nagy, Ádám Kristóf. “A Ga(III)-hidroxo- és -kloro-komplexek oldategyensúlyi vizsgálata .” 2013. Thesis, University of Debrecen. Accessed November 19, 2017. http://hdl.handle.net/2437/177006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Nagy, Ádám Kristóf. “A Ga(III)-hidroxo- és -kloro-komplexek oldategyensúlyi vizsgálata .” 2013. Web. 19 Nov 2017.

Vancouver:

Nagy K. A Ga(III)-hidroxo- és -kloro-komplexek oldategyensúlyi vizsgálata . [Internet] [Thesis]. University of Debrecen; 2013. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/2437/177006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Nagy K. A Ga(III)-hidroxo- és -kloro-komplexek oldategyensúlyi vizsgálata . [Thesis]. University of Debrecen; 2013. Available from: http://hdl.handle.net/2437/177006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

22. Kasra Pourang. Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy.

Degree: MSin Electrical Engineering, Electrical Engineering, 2015, University of Notre Dame

  In this work, we present the heteroepitaxial and homoepitaxial growth and characterization of single crystal Ga2O3 by plasma-assisted molecular beam epitaxy (MBE). For growth,… (more)

Subjects/Keywords: Plasma MBE; Gallium oxide

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APA (6th Edition):

Pourang, K. (2015). Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/bn999595w4d

Chicago Manual of Style (16th Edition):

Pourang, Kasra. “Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy.” 2015. Masters Thesis, University of Notre Dame. Accessed November 19, 2017. https://curate.nd.edu/show/bn999595w4d.

MLA Handbook (7th Edition):

Pourang, Kasra. “Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy.” 2015. Web. 19 Nov 2017.

Vancouver:

Pourang K. Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy. [Internet] [Masters thesis]. University of Notre Dame; 2015. [cited 2017 Nov 19]. Available from: https://curate.nd.edu/show/bn999595w4d.

Council of Science Editors:

Pourang K. Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy. [Masters Thesis]. University of Notre Dame; 2015. Available from: https://curate.nd.edu/show/bn999595w4d


Oregon State University

23. Armantrout, G. A. Metal-to-gallium arsenide contact evaluation using a VHF bridge technique.

Degree: MS, Electrical Engineering, 1964, Oregon State University

 In this paper, the theory of metal-semiconductor contacts was applied to metal contacts on gallium arsenide. A model was discussed which proposed that the contact… (more)

Subjects/Keywords: Gallium alloys

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APA (6th Edition):

Armantrout, G. A. (1964). Metal-to-gallium arsenide contact evaluation using a VHF bridge technique. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/48285

Chicago Manual of Style (16th Edition):

Armantrout, G A. “Metal-to-gallium arsenide contact evaluation using a VHF bridge technique.” 1964. Masters Thesis, Oregon State University. Accessed November 19, 2017. http://hdl.handle.net/1957/48285.

MLA Handbook (7th Edition):

Armantrout, G A. “Metal-to-gallium arsenide contact evaluation using a VHF bridge technique.” 1964. Web. 19 Nov 2017.

Vancouver:

Armantrout GA. Metal-to-gallium arsenide contact evaluation using a VHF bridge technique. [Internet] [Masters thesis]. Oregon State University; 1964. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/1957/48285.

Council of Science Editors:

Armantrout GA. Metal-to-gallium arsenide contact evaluation using a VHF bridge technique. [Masters Thesis]. Oregon State University; 1964. Available from: http://hdl.handle.net/1957/48285


Rice University

24. Zhang, Yuan. Exfoliation, Characterizations, and Applications of 2D Gallium Sheets.

Degree: 2016, Rice University

 The isolation of graphene from graphite have boomed the two dimensional materials research for many years. The metallic layers have been studied rarely, so I… (more)

Subjects/Keywords: 2D Materials; Gallium; Nanotechnology

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APA (6th Edition):

Zhang, Y. (2016). Exfoliation, Characterizations, and Applications of 2D Gallium Sheets. (Thesis). Rice University. Retrieved from http://hdl.handle.net/1911/95982

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Yuan. “Exfoliation, Characterizations, and Applications of 2D Gallium Sheets.” 2016. Thesis, Rice University. Accessed November 19, 2017. http://hdl.handle.net/1911/95982.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Yuan. “Exfoliation, Characterizations, and Applications of 2D Gallium Sheets.” 2016. Web. 19 Nov 2017.

Vancouver:

Zhang Y. Exfoliation, Characterizations, and Applications of 2D Gallium Sheets. [Internet] [Thesis]. Rice University; 2016. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/1911/95982.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang Y. Exfoliation, Characterizations, and Applications of 2D Gallium Sheets. [Thesis]. Rice University; 2016. Available from: http://hdl.handle.net/1911/95982

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

25. Tuomisto, Filip. Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics.

Degree: 2005, Helsinki University of Technology

The vacancy defects in GaN, ZnO and (Ga,Mn)As have been studied by positron annihilation spectroscopy. We show that both the thermodynamical quantities and the kinetics… (more)

Subjects/Keywords: positron annihilation spectroscopy; zinc oxide; gallium nitride; gallium manganese arsenide

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APA (6th Edition):

Tuomisto, F. (2005). Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2005/isbn9512278243/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tuomisto, Filip. “Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics.” 2005. Thesis, Helsinki University of Technology. Accessed November 19, 2017. http://lib.tkk.fi/Diss/2005/isbn9512278243/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tuomisto, Filip. “Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics.” 2005. Web. 19 Nov 2017.

Vancouver:

Tuomisto F. Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics. [Internet] [Thesis]. Helsinki University of Technology; 2005. [cited 2017 Nov 19]. Available from: http://lib.tkk.fi/Diss/2005/isbn9512278243/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tuomisto F. Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics. [Thesis]. Helsinki University of Technology; 2005. Available from: http://lib.tkk.fi/Diss/2005/isbn9512278243/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

26. chienhui, Chen. Fabrication and photocatalysis of porous GaN crystal.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 Abstract The aim of the present study is to synthesize gallium nitride photocatalysis with high specific surface area, which we expect it can promote degradation… (more)

Subjects/Keywords: lithium gallium oxide; porous gallium nitride; photocatalysis; high specific surface area

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APA (6th Edition):

chienhui, C. (2014). Fabrication and photocatalysis of porous GaN crystal. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-093333

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

chienhui, Chen. “Fabrication and photocatalysis of porous GaN crystal.” 2014. Thesis, NSYSU. Accessed November 19, 2017. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-093333.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

chienhui, Chen. “Fabrication and photocatalysis of porous GaN crystal.” 2014. Web. 19 Nov 2017.

Vancouver:

chienhui C. Fabrication and photocatalysis of porous GaN crystal. [Internet] [Thesis]. NSYSU; 2014. [cited 2017 Nov 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-093333.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

chienhui C. Fabrication and photocatalysis of porous GaN crystal. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-093333

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Louisville

27. Deshmane, Chinmay A. Rational design of mesoporous gallium oxide and gallium-based mixed oxide catalysts.

Degree: PhD, 2011, University of Louisville

 In the present study, we report the synthesis of thermally stable mesoporous gallium oxide and novel gallium-niobium mixed oxides employing Evaporation Induced Self-Assembly (EISA), Self-Assembly… (more)

Subjects/Keywords: Mesoporous materials; Catalysis; Gallium oxide; Epoxidation; Gallium-niobium oxide; Isomerization

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APA (6th Edition):

Deshmane, C. A. (2011). Rational design of mesoporous gallium oxide and gallium-based mixed oxide catalysts. (Doctoral Dissertation). University of Louisville. Retrieved from 10.18297/etd/338 ; http://ir.library.louisville.edu/etd/338

Chicago Manual of Style (16th Edition):

Deshmane, Chinmay A. “Rational design of mesoporous gallium oxide and gallium-based mixed oxide catalysts.” 2011. Doctoral Dissertation, University of Louisville. Accessed November 19, 2017. 10.18297/etd/338 ; http://ir.library.louisville.edu/etd/338.

MLA Handbook (7th Edition):

Deshmane, Chinmay A. “Rational design of mesoporous gallium oxide and gallium-based mixed oxide catalysts.” 2011. Web. 19 Nov 2017.

Vancouver:

Deshmane CA. Rational design of mesoporous gallium oxide and gallium-based mixed oxide catalysts. [Internet] [Doctoral dissertation]. University of Louisville; 2011. [cited 2017 Nov 19]. Available from: 10.18297/etd/338 ; http://ir.library.louisville.edu/etd/338.

Council of Science Editors:

Deshmane CA. Rational design of mesoporous gallium oxide and gallium-based mixed oxide catalysts. [Doctoral Dissertation]. University of Louisville; 2011. Available from: 10.18297/etd/338 ; http://ir.library.louisville.edu/etd/338


University of Hong Kong

28. Liu, Fang. Time-resolved photocurrent and photoluminescence spectra of GaInP/GaAs single-junction photovoltaic devices.

Degree: M. Phil., 2015, University of Hong Kong

A pulse-laser based time-resolved photocurrent (TRPC) and photoluminescence (TRPL) system with a programmable Boxcar integrator/averager system incorporated was implemented to investigate the optical properties and… (more)

Subjects/Keywords: Gallium arsenide; Indium phosphide; Spectrum analysis; Photovoltaic cells; Gallium compounds

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APA (6th Edition):

Liu, F. (2015). Time-resolved photocurrent and photoluminescence spectra of GaInP/GaAs single-junction photovoltaic devices. (Masters Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/209502

Chicago Manual of Style (16th Edition):

Liu, Fang. “Time-resolved photocurrent and photoluminescence spectra of GaInP/GaAs single-junction photovoltaic devices.” 2015. Masters Thesis, University of Hong Kong. Accessed November 19, 2017. http://hdl.handle.net/10722/209502.

MLA Handbook (7th Edition):

Liu, Fang. “Time-resolved photocurrent and photoluminescence spectra of GaInP/GaAs single-junction photovoltaic devices.” 2015. Web. 19 Nov 2017.

Vancouver:

Liu F. Time-resolved photocurrent and photoluminescence spectra of GaInP/GaAs single-junction photovoltaic devices. [Internet] [Masters thesis]. University of Hong Kong; 2015. [cited 2017 Nov 19]. Available from: http://hdl.handle.net/10722/209502.

Council of Science Editors:

Liu F. Time-resolved photocurrent and photoluminescence spectra of GaInP/GaAs single-junction photovoltaic devices. [Masters Thesis]. University of Hong Kong; 2015. Available from: http://hdl.handle.net/10722/209502


Ohio University

29. Chinchore, Abhijit Vijay. Growth and Scanning Tunneling Microscopy Studies of Manganese Induced Structures on <i>w</i>-Gallium Nitride (0001¯).

Degree: PhD, Physics and Astronomy (Arts and Sciences), 2011, Ohio University

  A great deal of research work has been put into GaN based diluted magnetic semiconductors with the desire of fabricating applicable spintronic devices. Dietl… (more)

Subjects/Keywords: Condensed Matter Physics; Spintronics; Scanning Tunneling Microscopy; Gallium Nitride; Manganese Gallium.

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APA (6th Edition):

Chinchore, A. V. (2011). Growth and Scanning Tunneling Microscopy Studies of Manganese Induced Structures on <i>w</i>-Gallium Nitride (0001¯). (Doctoral Dissertation). Ohio University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1321640962

Chicago Manual of Style (16th Edition):

Chinchore, Abhijit Vijay. “Growth and Scanning Tunneling Microscopy Studies of Manganese Induced Structures on <i>w</i>-Gallium Nitride (0001¯).” 2011. Doctoral Dissertation, Ohio University. Accessed November 19, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1321640962.

MLA Handbook (7th Edition):

Chinchore, Abhijit Vijay. “Growth and Scanning Tunneling Microscopy Studies of Manganese Induced Structures on <i>w</i>-Gallium Nitride (0001¯).” 2011. Web. 19 Nov 2017.

Vancouver:

Chinchore AV. Growth and Scanning Tunneling Microscopy Studies of Manganese Induced Structures on <i>w</i>-Gallium Nitride (0001¯). [Internet] [Doctoral dissertation]. Ohio University; 2011. [cited 2017 Nov 19]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1321640962.

Council of Science Editors:

Chinchore AV. Growth and Scanning Tunneling Microscopy Studies of Manganese Induced Structures on <i>w</i>-Gallium Nitride (0001¯). [Doctoral Dissertation]. Ohio University; 2011. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1321640962

30. Hee, Patricia. Exploration de nouvelles générations de verres de gallates pour la photonique : Exploration of new generation of gallate glasses for photonic’s application.

Degree: Docteur es, Physico-Chimie de la Matière Condensée, 2014, Bordeaux; Université Laval (Québec, Canada)

La demande de compositions de verres adaptées pour des applications optiques dans le domaine spectral du proche infrarouge est en continuelle augmentation. Les verres à… (more)

Subjects/Keywords: Verre; Gallium; Infrarouge; Fibres; Structure; Glasses; Gallium; Infrared; Fiber; Structure; 666.1

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APA (6th Edition):

Hee, P. (2014). Exploration de nouvelles générations de verres de gallates pour la photonique : Exploration of new generation of gallate glasses for photonic’s application. (Doctoral Dissertation). Bordeaux; Université Laval (Québec, Canada). Retrieved from http://www.theses.fr/2014BORD0243

Chicago Manual of Style (16th Edition):

Hee, Patricia. “Exploration de nouvelles générations de verres de gallates pour la photonique : Exploration of new generation of gallate glasses for photonic’s application.” 2014. Doctoral Dissertation, Bordeaux; Université Laval (Québec, Canada). Accessed November 19, 2017. http://www.theses.fr/2014BORD0243.

MLA Handbook (7th Edition):

Hee, Patricia. “Exploration de nouvelles générations de verres de gallates pour la photonique : Exploration of new generation of gallate glasses for photonic’s application.” 2014. Web. 19 Nov 2017.

Vancouver:

Hee P. Exploration de nouvelles générations de verres de gallates pour la photonique : Exploration of new generation of gallate glasses for photonic’s application. [Internet] [Doctoral dissertation]. Bordeaux; Université Laval (Québec, Canada); 2014. [cited 2017 Nov 19]. Available from: http://www.theses.fr/2014BORD0243.

Council of Science Editors:

Hee P. Exploration de nouvelles générations de verres de gallates pour la photonique : Exploration of new generation of gallate glasses for photonic’s application. [Doctoral Dissertation]. Bordeaux; Université Laval (Québec, Canada); 2014. Available from: http://www.theses.fr/2014BORD0243

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