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You searched for subject:(gallium arsenide). Showing records 1 – 30 of 281 total matches.

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Nelson Mandela Metropolitan University

1. Janse van Vuuren, Arno. Radiation damage in GaAs and SiC.

Degree: MSc, Faculty of Science, 2011, Nelson Mandela Metropolitan University

 In this dissertation the microstructure and hardness of phosphorous implanted SiC and neutron irradiated SiC and GaAs have been investigated. SiC is important due to… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Janse van Vuuren, A. (2011). Radiation damage in GaAs and SiC. (Masters Thesis). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/1477

Chicago Manual of Style (16th Edition):

Janse van Vuuren, Arno. “Radiation damage in GaAs and SiC.” 2011. Masters Thesis, Nelson Mandela Metropolitan University. Accessed August 10, 2020. http://hdl.handle.net/10948/1477.

MLA Handbook (7th Edition):

Janse van Vuuren, Arno. “Radiation damage in GaAs and SiC.” 2011. Web. 10 Aug 2020.

Vancouver:

Janse van Vuuren A. Radiation damage in GaAs and SiC. [Internet] [Masters thesis]. Nelson Mandela Metropolitan University; 2011. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/10948/1477.

Council of Science Editors:

Janse van Vuuren A. Radiation damage in GaAs and SiC. [Masters Thesis]. Nelson Mandela Metropolitan University; 2011. Available from: http://hdl.handle.net/10948/1477


Nelson Mandela Metropolitan University

2. Murape, Davison Munyaradzi. On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb.

Degree: PhD, Faculty of Science, 2014, Nelson Mandela Metropolitan University

 Since the development of the transistor in the Bell Telephone Laboratories in 1948 [78], the semiconductor industry has transformed the world we live in. It… (more)

Subjects/Keywords: Gallium arsenide semiconductors; Electronics

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APA (6th Edition):

Murape, D. M. (2014). On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb. (Doctoral Dissertation). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/d1020763

Chicago Manual of Style (16th Edition):

Murape, Davison Munyaradzi. “On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb.” 2014. Doctoral Dissertation, Nelson Mandela Metropolitan University. Accessed August 10, 2020. http://hdl.handle.net/10948/d1020763.

MLA Handbook (7th Edition):

Murape, Davison Munyaradzi. “On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb.” 2014. Web. 10 Aug 2020.

Vancouver:

Murape DM. On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb. [Internet] [Doctoral dissertation]. Nelson Mandela Metropolitan University; 2014. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/10948/d1020763.

Council of Science Editors:

Murape DM. On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb. [Doctoral Dissertation]. Nelson Mandela Metropolitan University; 2014. Available from: http://hdl.handle.net/10948/d1020763


University of Alberta

3. Weng, Gengsheng. Corrosion behavior of GaAs.

Degree: MSin Materials Engineering, Department of Chemical and Materials Engineering, 2002, University of Alberta

Subjects/Keywords: Gallium arsenide.; Gallium arsenide – Corrosion.; Gallium arsenide semiconductors.

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APA (6th Edition):

Weng, G. (2002). Corrosion behavior of GaAs. (Masters Thesis). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/t148fk94f

Chicago Manual of Style (16th Edition):

Weng, Gengsheng. “Corrosion behavior of GaAs.” 2002. Masters Thesis, University of Alberta. Accessed August 10, 2020. https://era.library.ualberta.ca/files/t148fk94f.

MLA Handbook (7th Edition):

Weng, Gengsheng. “Corrosion behavior of GaAs.” 2002. Web. 10 Aug 2020.

Vancouver:

Weng G. Corrosion behavior of GaAs. [Internet] [Masters thesis]. University of Alberta; 2002. [cited 2020 Aug 10]. Available from: https://era.library.ualberta.ca/files/t148fk94f.

Council of Science Editors:

Weng G. Corrosion behavior of GaAs. [Masters Thesis]. University of Alberta; 2002. Available from: https://era.library.ualberta.ca/files/t148fk94f


The Ohio State University

4. Davis, Mark Edward. Impurity analysis of epitaxial gallium arsenide with an accurate hall effect apparatus.

Degree: PhD, Graduate School, 1973, The Ohio State University

Subjects/Keywords: Physics; Gallium Arsenide

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APA (6th Edition):

Davis, M. E. (1973). Impurity analysis of epitaxial gallium arsenide with an accurate hall effect apparatus. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1486747191399326

Chicago Manual of Style (16th Edition):

Davis, Mark Edward. “Impurity analysis of epitaxial gallium arsenide with an accurate hall effect apparatus.” 1973. Doctoral Dissertation, The Ohio State University. Accessed August 10, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1486747191399326.

MLA Handbook (7th Edition):

Davis, Mark Edward. “Impurity analysis of epitaxial gallium arsenide with an accurate hall effect apparatus.” 1973. Web. 10 Aug 2020.

Vancouver:

Davis ME. Impurity analysis of epitaxial gallium arsenide with an accurate hall effect apparatus. [Internet] [Doctoral dissertation]. The Ohio State University; 1973. [cited 2020 Aug 10]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486747191399326.

Council of Science Editors:

Davis ME. Impurity analysis of epitaxial gallium arsenide with an accurate hall effect apparatus. [Doctoral Dissertation]. The Ohio State University; 1973. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486747191399326


Oregon State University

5. Schumm, Gerhard. A study of the photoresponse of semi-insulating gallium arsenide.

Degree: MS, Electrical and Computer Engineering, 1985, Oregon State University

 The photoresponse behavior of semi-insulating GaAs is investigated. The photocarrier lifetime is discussed and the influence of surface and contact recombination is taken into account.… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Schumm, G. (1985). A study of the photoresponse of semi-insulating gallium arsenide. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/40372

Chicago Manual of Style (16th Edition):

Schumm, Gerhard. “A study of the photoresponse of semi-insulating gallium arsenide.” 1985. Masters Thesis, Oregon State University. Accessed August 10, 2020. http://hdl.handle.net/1957/40372.

MLA Handbook (7th Edition):

Schumm, Gerhard. “A study of the photoresponse of semi-insulating gallium arsenide.” 1985. Web. 10 Aug 2020.

Vancouver:

Schumm G. A study of the photoresponse of semi-insulating gallium arsenide. [Internet] [Masters thesis]. Oregon State University; 1985. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/1957/40372.

Council of Science Editors:

Schumm G. A study of the photoresponse of semi-insulating gallium arsenide. [Masters Thesis]. Oregon State University; 1985. Available from: http://hdl.handle.net/1957/40372


Oregon State University

6. Yang, Fanling Hsu. Electrical properties of GaAs FET structures.

Degree: PhD, Electrical and Computer Engineering, 1983, Oregon State University

 The electrical properties of ion-implanted GaAs FET channels are investigated by two methods. First, the channel current (I) as a function of voltage (V) is… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Yang, F. H. (1983). Electrical properties of GaAs FET structures. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/40730

Chicago Manual of Style (16th Edition):

Yang, Fanling Hsu. “Electrical properties of GaAs FET structures.” 1983. Doctoral Dissertation, Oregon State University. Accessed August 10, 2020. http://hdl.handle.net/1957/40730.

MLA Handbook (7th Edition):

Yang, Fanling Hsu. “Electrical properties of GaAs FET structures.” 1983. Web. 10 Aug 2020.

Vancouver:

Yang FH. Electrical properties of GaAs FET structures. [Internet] [Doctoral dissertation]. Oregon State University; 1983. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/1957/40730.

Council of Science Editors:

Yang FH. Electrical properties of GaAs FET structures. [Doctoral Dissertation]. Oregon State University; 1983. Available from: http://hdl.handle.net/1957/40730


Oregon State University

7. Das, Utpal. Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs.

Degree: MS, Electrical and Computer Engineering, 1983, Oregon State University

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Das, U. (1983). Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/41425

Chicago Manual of Style (16th Edition):

Das, Utpal. “Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs.” 1983. Masters Thesis, Oregon State University. Accessed August 10, 2020. http://hdl.handle.net/1957/41425.

MLA Handbook (7th Edition):

Das, Utpal. “Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs.” 1983. Web. 10 Aug 2020.

Vancouver:

Das U. Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs. [Internet] [Masters thesis]. Oregon State University; 1983. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/1957/41425.

Council of Science Editors:

Das U. Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs. [Masters Thesis]. Oregon State University; 1983. Available from: http://hdl.handle.net/1957/41425


Oregon State University

8. Ju, Shu-ing. Design of GaAs monolithically integrated optical receiver amplifier.

Degree: MS, Electrical and Computer Engineering, 1988, Oregon State University

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Ju, S. (1988). Design of GaAs monolithically integrated optical receiver amplifier. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/40394

Chicago Manual of Style (16th Edition):

Ju, Shu-ing. “Design of GaAs monolithically integrated optical receiver amplifier.” 1988. Masters Thesis, Oregon State University. Accessed August 10, 2020. http://hdl.handle.net/1957/40394.

MLA Handbook (7th Edition):

Ju, Shu-ing. “Design of GaAs monolithically integrated optical receiver amplifier.” 1988. Web. 10 Aug 2020.

Vancouver:

Ju S. Design of GaAs monolithically integrated optical receiver amplifier. [Internet] [Masters thesis]. Oregon State University; 1988. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/1957/40394.

Council of Science Editors:

Ju S. Design of GaAs monolithically integrated optical receiver amplifier. [Masters Thesis]. Oregon State University; 1988. Available from: http://hdl.handle.net/1957/40394


Oregon State University

9. Yang, Howard C. Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination.

Degree: MS, Electrical and Computer Engineering, 1986, Oregon State University

 The optical and electrical characteristics of semi-insulating GaAs photoconductive detectors made with ohmic and Schottky contacts are studied in this thesis. Current - voltage measurements… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Yang, H. C. (1986). Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/39839

Chicago Manual of Style (16th Edition):

Yang, Howard C. “Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination.” 1986. Masters Thesis, Oregon State University. Accessed August 10, 2020. http://hdl.handle.net/1957/39839.

MLA Handbook (7th Edition):

Yang, Howard C. “Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination.” 1986. Web. 10 Aug 2020.

Vancouver:

Yang HC. Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination. [Internet] [Masters thesis]. Oregon State University; 1986. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/1957/39839.

Council of Science Editors:

Yang HC. Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination. [Masters Thesis]. Oregon State University; 1986. Available from: http://hdl.handle.net/1957/39839


Oregon State University

10. Orwa, Julius O. Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions.

Degree: MS, Physics, 1989, Oregon State University

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Orwa, J. O. (1989). Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/40478

Chicago Manual of Style (16th Edition):

Orwa, Julius O. “Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions.” 1989. Masters Thesis, Oregon State University. Accessed August 10, 2020. http://hdl.handle.net/1957/40478.

MLA Handbook (7th Edition):

Orwa, Julius O. “Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions.” 1989. Web. 10 Aug 2020.

Vancouver:

Orwa JO. Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions. [Internet] [Masters thesis]. Oregon State University; 1989. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/1957/40478.

Council of Science Editors:

Orwa JO. Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions. [Masters Thesis]. Oregon State University; 1989. Available from: http://hdl.handle.net/1957/40478


Oregon State University

11. Kollipara, Ravindranath Tagore. Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors.

Degree: PhD, Electrical and Computer Engineering, 1991, Oregon State University

 High speed photodetectors are a necessary element in broad band digital and analog optical communication systems. In this thesis easily integrable planar high speed photodetectors… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Kollipara, R. T. (1991). Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/37481

Chicago Manual of Style (16th Edition):

Kollipara, Ravindranath Tagore. “Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors.” 1991. Doctoral Dissertation, Oregon State University. Accessed August 10, 2020. http://hdl.handle.net/1957/37481.

MLA Handbook (7th Edition):

Kollipara, Ravindranath Tagore. “Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors.” 1991. Web. 10 Aug 2020.

Vancouver:

Kollipara RT. Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors. [Internet] [Doctoral dissertation]. Oregon State University; 1991. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/1957/37481.

Council of Science Editors:

Kollipara RT. Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors. [Doctoral Dissertation]. Oregon State University; 1991. Available from: http://hdl.handle.net/1957/37481


Oregon State University

12. Chang, Chujyh. Modeling and characterization of hemt devices.

Degree: MS, Electrical and Computer Engineering, 1989, Oregon State University

 Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Chang, C. (1989). Modeling and characterization of hemt devices. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/38452

Chicago Manual of Style (16th Edition):

Chang, Chujyh. “Modeling and characterization of hemt devices.” 1989. Masters Thesis, Oregon State University. Accessed August 10, 2020. http://hdl.handle.net/1957/38452.

MLA Handbook (7th Edition):

Chang, Chujyh. “Modeling and characterization of hemt devices.” 1989. Web. 10 Aug 2020.

Vancouver:

Chang C. Modeling and characterization of hemt devices. [Internet] [Masters thesis]. Oregon State University; 1989. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/1957/38452.

Council of Science Editors:

Chang C. Modeling and characterization of hemt devices. [Masters Thesis]. Oregon State University; 1989. Available from: http://hdl.handle.net/1957/38452


Oregon State University

13. Or, Pee-Keong. Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit.

Degree: MS, Electrical and Computer Engineering, 1987, Oregon State University

 The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Or, P. (1987). Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/39879

Chicago Manual of Style (16th Edition):

Or, Pee-Keong. “Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit.” 1987. Masters Thesis, Oregon State University. Accessed August 10, 2020. http://hdl.handle.net/1957/39879.

MLA Handbook (7th Edition):

Or, Pee-Keong. “Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit.” 1987. Web. 10 Aug 2020.

Vancouver:

Or P. Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit. [Internet] [Masters thesis]. Oregon State University; 1987. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/1957/39879.

Council of Science Editors:

Or P. Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit. [Masters Thesis]. Oregon State University; 1987. Available from: http://hdl.handle.net/1957/39879


Hong Kong University of Science and Technology

14. Chen, Hongwei. Fabrication technology and device simulation of enhancement-mode AlGaN/GaN transistors.

Degree: 2012, Hong Kong University of Science and Technology

 GaN based high electron mobility transistors (HEMTs) technology has witnessed rapid development during the last decade in the applications of high-frequency power amplifiers, high-efficiency power… (more)

Subjects/Keywords: Transistors ; Design and construction ; Gallium arsenide semiconductors

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APA (6th Edition):

Chen, H. (2012). Fabrication technology and device simulation of enhancement-mode AlGaN/GaN transistors. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-73362 ; https://doi.org/10.14711/thesis-b1198661 ; http://repository.ust.hk/ir/bitstream/1783.1-73362/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Hongwei. “Fabrication technology and device simulation of enhancement-mode AlGaN/GaN transistors.” 2012. Thesis, Hong Kong University of Science and Technology. Accessed August 10, 2020. http://repository.ust.hk/ir/Record/1783.1-73362 ; https://doi.org/10.14711/thesis-b1198661 ; http://repository.ust.hk/ir/bitstream/1783.1-73362/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Hongwei. “Fabrication technology and device simulation of enhancement-mode AlGaN/GaN transistors.” 2012. Web. 10 Aug 2020.

Vancouver:

Chen H. Fabrication technology and device simulation of enhancement-mode AlGaN/GaN transistors. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2012. [cited 2020 Aug 10]. Available from: http://repository.ust.hk/ir/Record/1783.1-73362 ; https://doi.org/10.14711/thesis-b1198661 ; http://repository.ust.hk/ir/bitstream/1783.1-73362/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen H. Fabrication technology and device simulation of enhancement-mode AlGaN/GaN transistors. [Thesis]. Hong Kong University of Science and Technology; 2012. Available from: http://repository.ust.hk/ir/Record/1783.1-73362 ; https://doi.org/10.14711/thesis-b1198661 ; http://repository.ust.hk/ir/bitstream/1783.1-73362/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Oregon

15. Baldwin, Thomas. Trion-based Optical Processes in Semiconductor Quantum Wells.

Degree: PhD, Department of Physics, 2016, University of Oregon

 In a semiconductor, negative charge is carried by conduction-band electrons and positive charge is carried by valence-band holes. While charge transport properties can be understood… (more)

Subjects/Keywords: Excitons; Gallium arsenide; Quantum wells; Trions

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APA (6th Edition):

Baldwin, T. (2016). Trion-based Optical Processes in Semiconductor Quantum Wells. (Doctoral Dissertation). University of Oregon. Retrieved from http://hdl.handle.net/1794/19728

Chicago Manual of Style (16th Edition):

Baldwin, Thomas. “Trion-based Optical Processes in Semiconductor Quantum Wells.” 2016. Doctoral Dissertation, University of Oregon. Accessed August 10, 2020. http://hdl.handle.net/1794/19728.

MLA Handbook (7th Edition):

Baldwin, Thomas. “Trion-based Optical Processes in Semiconductor Quantum Wells.” 2016. Web. 10 Aug 2020.

Vancouver:

Baldwin T. Trion-based Optical Processes in Semiconductor Quantum Wells. [Internet] [Doctoral dissertation]. University of Oregon; 2016. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/1794/19728.

Council of Science Editors:

Baldwin T. Trion-based Optical Processes in Semiconductor Quantum Wells. [Doctoral Dissertation]. University of Oregon; 2016. Available from: http://hdl.handle.net/1794/19728


University of British Columbia

16. Hui, David C. W. Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide .

Degree: 1989, University of British Columbia

 This thesis consists of a study of several qualification techniques for SI LEC GaAs and the application of these techniques to various ingots. For use… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Hui, D. C. W. (1989). Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/30648

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hui, David C W. “Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide .” 1989. Thesis, University of British Columbia. Accessed August 10, 2020. http://hdl.handle.net/2429/30648.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hui, David C W. “Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide .” 1989. Web. 10 Aug 2020.

Vancouver:

Hui DCW. Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide . [Internet] [Thesis]. University of British Columbia; 1989. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/2429/30648.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hui DCW. Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide . [Thesis]. University of British Columbia; 1989. Available from: http://hdl.handle.net/2429/30648

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of British Columbia

17. Tang, Wade Wai Chung. Semi-insulating gallium arsenide-deep trapping levels, dislocations and backgating .

Degree: 1984, University of British Columbia

 Work is reported on three topics relating to problems which hold back the development of GaAs integrated circuits. These topics are deep trapping levels in… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Tang, W. W. C. (1984). Semi-insulating gallium arsenide-deep trapping levels, dislocations and backgating . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/25141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tang, Wade Wai Chung. “Semi-insulating gallium arsenide-deep trapping levels, dislocations and backgating .” 1984. Thesis, University of British Columbia. Accessed August 10, 2020. http://hdl.handle.net/2429/25141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tang, Wade Wai Chung. “Semi-insulating gallium arsenide-deep trapping levels, dislocations and backgating .” 1984. Web. 10 Aug 2020.

Vancouver:

Tang WWC. Semi-insulating gallium arsenide-deep trapping levels, dislocations and backgating . [Internet] [Thesis]. University of British Columbia; 1984. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/2429/25141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tang WWC. Semi-insulating gallium arsenide-deep trapping levels, dislocations and backgating . [Thesis]. University of British Columbia; 1984. Available from: http://hdl.handle.net/2429/25141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of British Columbia

18. Salusbury, Ian McKenzie. Reactions of the {100} face of gallium arsenide with molecular and atomic bromine .

Degree: 1990, University of British Columbia

 The reaction of gallium arsenide {100} with molecular and atomic bromine was studied at temperatures between 100 and 225°C and at pressures of bromine between… (more)

Subjects/Keywords: Gallium arsenide; Bromine

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APA (6th Edition):

Salusbury, I. M. (1990). Reactions of the {100} face of gallium arsenide with molecular and atomic bromine . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/29866

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Salusbury, Ian McKenzie. “Reactions of the {100} face of gallium arsenide with molecular and atomic bromine .” 1990. Thesis, University of British Columbia. Accessed August 10, 2020. http://hdl.handle.net/2429/29866.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Salusbury, Ian McKenzie. “Reactions of the {100} face of gallium arsenide with molecular and atomic bromine .” 1990. Web. 10 Aug 2020.

Vancouver:

Salusbury IM. Reactions of the {100} face of gallium arsenide with molecular and atomic bromine . [Internet] [Thesis]. University of British Columbia; 1990. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/2429/29866.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Salusbury IM. Reactions of the {100} face of gallium arsenide with molecular and atomic bromine . [Thesis]. University of British Columbia; 1990. Available from: http://hdl.handle.net/2429/29866

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of British Columbia

19. Bakeer, Muna. Radiative heat transfer in gallium arsenide lec crystal pullers .

Degree: 1990, University of British Columbia

 A numerical analysis of radiative heat transfer in a liquid encapsulant Czochralski gallium arsenide crystal puller is developed. The heat transfer and equivilent ambient temperature… (more)

Subjects/Keywords: Gallium arsenide crystals

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APA (6th Edition):

Bakeer, M. (1990). Radiative heat transfer in gallium arsenide lec crystal pullers . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/29916

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bakeer, Muna. “Radiative heat transfer in gallium arsenide lec crystal pullers .” 1990. Thesis, University of British Columbia. Accessed August 10, 2020. http://hdl.handle.net/2429/29916.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bakeer, Muna. “Radiative heat transfer in gallium arsenide lec crystal pullers .” 1990. Web. 10 Aug 2020.

Vancouver:

Bakeer M. Radiative heat transfer in gallium arsenide lec crystal pullers . [Internet] [Thesis]. University of British Columbia; 1990. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/2429/29916.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bakeer M. Radiative heat transfer in gallium arsenide lec crystal pullers . [Thesis]. University of British Columbia; 1990. Available from: http://hdl.handle.net/2429/29916

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

20. Nagarajan, M. Heteroepitaxial growth of zinc arsenide on gallium arsenide and indium phosphide on silicon; -.

Degree: Science and Humanities, 2013, Anna University

Now a days both IIV and IIIV compound semiconductors such as newlineZinc Arsenide ZA and Indium Phosphide InP possess potential newlinephysical properties ZA is a… (more)

Subjects/Keywords: Gallium Arsenide; Growth; Heteroepitaxial; Indium Phosphide; Silicon; Zinc Arsenide

Page 1

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APA (6th Edition):

Nagarajan, M. (2013). Heteroepitaxial growth of zinc arsenide on gallium arsenide and indium phosphide on silicon; -. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/26878

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Nagarajan, M. “Heteroepitaxial growth of zinc arsenide on gallium arsenide and indium phosphide on silicon; -.” 2013. Thesis, Anna University. Accessed August 10, 2020. http://shodhganga.inflibnet.ac.in/handle/10603/26878.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Nagarajan, M. “Heteroepitaxial growth of zinc arsenide on gallium arsenide and indium phosphide on silicon; -.” 2013. Web. 10 Aug 2020.

Vancouver:

Nagarajan M. Heteroepitaxial growth of zinc arsenide on gallium arsenide and indium phosphide on silicon; -. [Internet] [Thesis]. Anna University; 2013. [cited 2020 Aug 10]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/26878.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Nagarajan M. Heteroepitaxial growth of zinc arsenide on gallium arsenide and indium phosphide on silicon; -. [Thesis]. Anna University; 2013. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/26878

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

21. Okvath, Joanne. The Effects of GaAs substrate miscut on InAs quantum dot optoelectronic properties: Examined by photoreflectance (PR) and deep level transient spectroscopy (DLTS).

Degree: Microelectronic Engineering, 2010, Rochester Institute of Technology

 In this work, advanced III-V quantum dot (QD) materials are discussed and examined theoretically. The significance of substrate miscut with regards to QD growth is… (more)

Subjects/Keywords: Gallium arsenide; Indium arsenide; Photoreflectance; Photovoltaic; Quantum dot; Spectroscopy

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APA (6th Edition):

Okvath, J. (2010). The Effects of GaAs substrate miscut on InAs quantum dot optoelectronic properties: Examined by photoreflectance (PR) and deep level transient spectroscopy (DLTS). (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/7212

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Okvath, Joanne. “The Effects of GaAs substrate miscut on InAs quantum dot optoelectronic properties: Examined by photoreflectance (PR) and deep level transient spectroscopy (DLTS).” 2010. Thesis, Rochester Institute of Technology. Accessed August 10, 2020. https://scholarworks.rit.edu/theses/7212.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Okvath, Joanne. “The Effects of GaAs substrate miscut on InAs quantum dot optoelectronic properties: Examined by photoreflectance (PR) and deep level transient spectroscopy (DLTS).” 2010. Web. 10 Aug 2020.

Vancouver:

Okvath J. The Effects of GaAs substrate miscut on InAs quantum dot optoelectronic properties: Examined by photoreflectance (PR) and deep level transient spectroscopy (DLTS). [Internet] [Thesis]. Rochester Institute of Technology; 2010. [cited 2020 Aug 10]. Available from: https://scholarworks.rit.edu/theses/7212.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Okvath J. The Effects of GaAs substrate miscut on InAs quantum dot optoelectronic properties: Examined by photoreflectance (PR) and deep level transient spectroscopy (DLTS). [Thesis]. Rochester Institute of Technology; 2010. Available from: https://scholarworks.rit.edu/theses/7212

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

22. Tuomisto, Filip. Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics.

Degree: 2005, Helsinki University of Technology

The vacancy defects in GaN, ZnO and (Ga,Mn)As have been studied by positron annihilation spectroscopy. We show that both the thermodynamical quantities and the kinetics… (more)

Subjects/Keywords: positron annihilation spectroscopy; zinc oxide; gallium nitride; gallium manganese arsenide

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APA (6th Edition):

Tuomisto, F. (2005). Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2005/isbn9512278243/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tuomisto, Filip. “Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics.” 2005. Thesis, Helsinki University of Technology. Accessed August 10, 2020. http://lib.tkk.fi/Diss/2005/isbn9512278243/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tuomisto, Filip. “Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics.” 2005. Web. 10 Aug 2020.

Vancouver:

Tuomisto F. Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics. [Internet] [Thesis]. Helsinki University of Technology; 2005. [cited 2020 Aug 10]. Available from: http://lib.tkk.fi/Diss/2005/isbn9512278243/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tuomisto F. Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics. [Thesis]. Helsinki University of Technology; 2005. Available from: http://lib.tkk.fi/Diss/2005/isbn9512278243/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

23. Zhang, Aixi. e-HEMT : an engineering model for GAN-based high electron mobility transistors.

Degree: 2014, Hong Kong University of Science and Technology

Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave… (more)

Subjects/Keywords: Modulation-doped field-effect transistors ; Gallium arsenide semiconductors ; Gallium nitride

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APA (6th Edition):

Zhang, A. (2014). e-HEMT : an engineering model for GAN-based high electron mobility transistors. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-71581 ; https://doi.org/10.14711/thesis-b1333699 ; http://repository.ust.hk/ir/bitstream/1783.1-71581/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Aixi. “e-HEMT : an engineering model for GAN-based high electron mobility transistors.” 2014. Thesis, Hong Kong University of Science and Technology. Accessed August 10, 2020. http://repository.ust.hk/ir/Record/1783.1-71581 ; https://doi.org/10.14711/thesis-b1333699 ; http://repository.ust.hk/ir/bitstream/1783.1-71581/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Aixi. “e-HEMT : an engineering model for GAN-based high electron mobility transistors.” 2014. Web. 10 Aug 2020.

Vancouver:

Zhang A. e-HEMT : an engineering model for GAN-based high electron mobility transistors. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2014. [cited 2020 Aug 10]. Available from: http://repository.ust.hk/ir/Record/1783.1-71581 ; https://doi.org/10.14711/thesis-b1333699 ; http://repository.ust.hk/ir/bitstream/1783.1-71581/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang A. e-HEMT : an engineering model for GAN-based high electron mobility transistors. [Thesis]. Hong Kong University of Science and Technology; 2014. Available from: http://repository.ust.hk/ir/Record/1783.1-71581 ; https://doi.org/10.14711/thesis-b1333699 ; http://repository.ust.hk/ir/bitstream/1783.1-71581/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arizona

24. WEBB, DAVID RONALD. PULMONARY AND SYSTEMIC TOXICITY OF GALLIUM-ARSENIDE (RAT, GALLIUM OXIDE, ARSENIC OXIDE) .

Degree: 1984, University of Arizona

 Inhalation of gallium arsenide (GaAs) particulates represent a potential health hazard in the semiconductor industry. Our results showed that GaAs was soluble under a variety… (more)

Subjects/Keywords: Gallium  – Toxicology.; Gallium arsenide semiconductors  – Toxicology.

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APA (6th Edition):

WEBB, D. R. (1984). PULMONARY AND SYSTEMIC TOXICITY OF GALLIUM-ARSENIDE (RAT, GALLIUM OXIDE, ARSENIC OXIDE) . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/187807

Chicago Manual of Style (16th Edition):

WEBB, DAVID RONALD. “PULMONARY AND SYSTEMIC TOXICITY OF GALLIUM-ARSENIDE (RAT, GALLIUM OXIDE, ARSENIC OXIDE) .” 1984. Doctoral Dissertation, University of Arizona. Accessed August 10, 2020. http://hdl.handle.net/10150/187807.

MLA Handbook (7th Edition):

WEBB, DAVID RONALD. “PULMONARY AND SYSTEMIC TOXICITY OF GALLIUM-ARSENIDE (RAT, GALLIUM OXIDE, ARSENIC OXIDE) .” 1984. Web. 10 Aug 2020.

Vancouver:

WEBB DR. PULMONARY AND SYSTEMIC TOXICITY OF GALLIUM-ARSENIDE (RAT, GALLIUM OXIDE, ARSENIC OXIDE) . [Internet] [Doctoral dissertation]. University of Arizona; 1984. [cited 2020 Aug 10]. Available from: http://hdl.handle.net/10150/187807.

Council of Science Editors:

WEBB DR. PULMONARY AND SYSTEMIC TOXICITY OF GALLIUM-ARSENIDE (RAT, GALLIUM OXIDE, ARSENIC OXIDE) . [Doctoral Dissertation]. University of Arizona; 1984. Available from: http://hdl.handle.net/10150/187807


Hong Kong University of Science and Technology

25. Han, Yu ECE. Planar III-V nanostructures on (001) silicon : hetero-epitaxial growth and device implementations.

Degree: 2018, Hong Kong University of Science and Technology

 The development of Si based optoelectronic circuits is fueled by the minimization of device dimension and the maximization of device performance. As the size of… (more)

Subjects/Keywords: Optoelectronic devices ; Materials ; Gallium arsenide semiconductors ; Gallium compounds ; Electric properties ; Silicon ; Nanosilicon

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APA (6th Edition):

Han, Y. E. (2018). Planar III-V nanostructures on (001) silicon : hetero-epitaxial growth and device implementations. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-101306 ; https://doi.org/10.14711/thesis-991012637167403412 ; http://repository.ust.hk/ir/bitstream/1783.1-101306/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Han, Yu ECE. “Planar III-V nanostructures on (001) silicon : hetero-epitaxial growth and device implementations.” 2018. Thesis, Hong Kong University of Science and Technology. Accessed August 10, 2020. http://repository.ust.hk/ir/Record/1783.1-101306 ; https://doi.org/10.14711/thesis-991012637167403412 ; http://repository.ust.hk/ir/bitstream/1783.1-101306/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Han, Yu ECE. “Planar III-V nanostructures on (001) silicon : hetero-epitaxial growth and device implementations.” 2018. Web. 10 Aug 2020.

Vancouver:

Han YE. Planar III-V nanostructures on (001) silicon : hetero-epitaxial growth and device implementations. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2018. [cited 2020 Aug 10]. Available from: http://repository.ust.hk/ir/Record/1783.1-101306 ; https://doi.org/10.14711/thesis-991012637167403412 ; http://repository.ust.hk/ir/bitstream/1783.1-101306/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Han YE. Planar III-V nanostructures on (001) silicon : hetero-epitaxial growth and device implementations. [Thesis]. Hong Kong University of Science and Technology; 2018. Available from: http://repository.ust.hk/ir/Record/1783.1-101306 ; https://doi.org/10.14711/thesis-991012637167403412 ; http://repository.ust.hk/ir/bitstream/1783.1-101306/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


The Ohio State University

26. Deeter, Timothy Lee. Fabrication and characterization of ohmic contacts made with gold on heavily tin doped, N-type surface layers in Gallium arsenide.

Degree: PhD, Graduate School, 1981, The Ohio State University

Subjects/Keywords: Engineering; Gallium arsenide; Ohmic contacts

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APA (6th Edition):

Deeter, T. L. (1981). Fabrication and characterization of ohmic contacts made with gold on heavily tin doped, N-type surface layers in Gallium arsenide. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1487159643969824

Chicago Manual of Style (16th Edition):

Deeter, Timothy Lee. “Fabrication and characterization of ohmic contacts made with gold on heavily tin doped, N-type surface layers in Gallium arsenide.” 1981. Doctoral Dissertation, The Ohio State University. Accessed August 10, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487159643969824.

MLA Handbook (7th Edition):

Deeter, Timothy Lee. “Fabrication and characterization of ohmic contacts made with gold on heavily tin doped, N-type surface layers in Gallium arsenide.” 1981. Web. 10 Aug 2020.

Vancouver:

Deeter TL. Fabrication and characterization of ohmic contacts made with gold on heavily tin doped, N-type surface layers in Gallium arsenide. [Internet] [Doctoral dissertation]. The Ohio State University; 1981. [cited 2020 Aug 10]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1487159643969824.

Council of Science Editors:

Deeter TL. Fabrication and characterization of ohmic contacts made with gold on heavily tin doped, N-type surface layers in Gallium arsenide. [Doctoral Dissertation]. The Ohio State University; 1981. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1487159643969824


The Ohio State University

27. Richardson, Steven Leslie. Part I: Numerical investigation of the RKKY interaction in a BCS superconducter ; Part II: Dynamical analysis of LEED from the (110) surfaces of substitutionally disordered GaxA1?-xAs.

Degree: PhD, Graduate School, 1983, The Ohio State University

Subjects/Keywords: Physics; Superconductors; Electrons; Gallium arsenide

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APA (6th Edition):

Richardson, S. L. (1983). Part I: Numerical investigation of the RKKY interaction in a BCS superconducter ; Part II: Dynamical analysis of LEED from the (110) surfaces of substitutionally disordered GaxA1?-xAs. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1487243706112359

Chicago Manual of Style (16th Edition):

Richardson, Steven Leslie. “Part I: Numerical investigation of the RKKY interaction in a BCS superconducter ; Part II: Dynamical analysis of LEED from the (110) surfaces of substitutionally disordered GaxA1?-xAs.” 1983. Doctoral Dissertation, The Ohio State University. Accessed August 10, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487243706112359.

MLA Handbook (7th Edition):

Richardson, Steven Leslie. “Part I: Numerical investigation of the RKKY interaction in a BCS superconducter ; Part II: Dynamical analysis of LEED from the (110) surfaces of substitutionally disordered GaxA1?-xAs.” 1983. Web. 10 Aug 2020.

Vancouver:

Richardson SL. Part I: Numerical investigation of the RKKY interaction in a BCS superconducter ; Part II: Dynamical analysis of LEED from the (110) surfaces of substitutionally disordered GaxA1?-xAs. [Internet] [Doctoral dissertation]. The Ohio State University; 1983. [cited 2020 Aug 10]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1487243706112359.

Council of Science Editors:

Richardson SL. Part I: Numerical investigation of the RKKY interaction in a BCS superconducter ; Part II: Dynamical analysis of LEED from the (110) surfaces of substitutionally disordered GaxA1?-xAs. [Doctoral Dissertation]. The Ohio State University; 1983. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1487243706112359


The Ohio State University

28. Foster, John Edwin. Electrical characterstics of the silicon nitride-gallium arsenide interface.

Degree: PhD, Graduate School, 1969, The Ohio State University

Subjects/Keywords: Engineering; Silicon; Gallium arsenide

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APA (6th Edition):

Foster, J. E. (1969). Electrical characterstics of the silicon nitride-gallium arsenide interface. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1486654338999837

Chicago Manual of Style (16th Edition):

Foster, John Edwin. “Electrical characterstics of the silicon nitride-gallium arsenide interface.” 1969. Doctoral Dissertation, The Ohio State University. Accessed August 10, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1486654338999837.

MLA Handbook (7th Edition):

Foster, John Edwin. “Electrical characterstics of the silicon nitride-gallium arsenide interface.” 1969. Web. 10 Aug 2020.

Vancouver:

Foster JE. Electrical characterstics of the silicon nitride-gallium arsenide interface. [Internet] [Doctoral dissertation]. The Ohio State University; 1969. [cited 2020 Aug 10]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486654338999837.

Council of Science Editors:

Foster JE. Electrical characterstics of the silicon nitride-gallium arsenide interface. [Doctoral Dissertation]. The Ohio State University; 1969. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486654338999837


The Ohio State University

29. Lorenz, Ralph Stanley. Preparation and characteristics of GaAs-deposited SiO2 .

Degree: PhD, Graduate School, 1970, The Ohio State University

Subjects/Keywords: Engineering; Gallium arsenide; Silicon dioxide

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APA (6th Edition):

Lorenz, R. S. (1970). Preparation and characteristics of GaAs-deposited SiO2 . (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1486658867446776

Chicago Manual of Style (16th Edition):

Lorenz, Ralph Stanley. “Preparation and characteristics of GaAs-deposited SiO2 .” 1970. Doctoral Dissertation, The Ohio State University. Accessed August 10, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1486658867446776.

MLA Handbook (7th Edition):

Lorenz, Ralph Stanley. “Preparation and characteristics of GaAs-deposited SiO2 .” 1970. Web. 10 Aug 2020.

Vancouver:

Lorenz RS. Preparation and characteristics of GaAs-deposited SiO2 . [Internet] [Doctoral dissertation]. The Ohio State University; 1970. [cited 2020 Aug 10]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486658867446776.

Council of Science Editors:

Lorenz RS. Preparation and characteristics of GaAs-deposited SiO2 . [Doctoral Dissertation]. The Ohio State University; 1970. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486658867446776


The Ohio State University

30. Balch, Joseph W. Epitaxial growth of gallium arsenide on zinc selenide .

Degree: PhD, Graduate School, 1971, The Ohio State University

Subjects/Keywords: Engineering; Gallium arsenide; Zinc selenide

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APA (6th Edition):

Balch, J. W. (1971). Epitaxial growth of gallium arsenide on zinc selenide . (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1486721557804206

Chicago Manual of Style (16th Edition):

Balch, Joseph W. “Epitaxial growth of gallium arsenide on zinc selenide .” 1971. Doctoral Dissertation, The Ohio State University. Accessed August 10, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1486721557804206.

MLA Handbook (7th Edition):

Balch, Joseph W. “Epitaxial growth of gallium arsenide on zinc selenide .” 1971. Web. 10 Aug 2020.

Vancouver:

Balch JW. Epitaxial growth of gallium arsenide on zinc selenide . [Internet] [Doctoral dissertation]. The Ohio State University; 1971. [cited 2020 Aug 10]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486721557804206.

Council of Science Editors:

Balch JW. Epitaxial growth of gallium arsenide on zinc selenide . [Doctoral Dissertation]. The Ohio State University; 1971. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486721557804206

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