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You searched for subject:(fast random access). Showing records 1 – 2 of 2 total matches.

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University of Southern California

1. Fan, Zihong. Interactive fast random access, retrieval, and navigation of large datasets.

Degree: PhD, Electrical Engineering, 2011, University of Southern California

This research is motivated by two important trends. First, more than ever before large amounts of data and information are being accessed through mobile devices such as smart phones, tablet computers, book readers, etc. Second, significant amounts of complex and high-volume information (e.g. maps, medical images, scientific datasets, virtual museums, etc.) are now available over networks. In addition to entertainment applications (e.g. video sharing), a significant driver of traffic over networks is likely to come from professional applications. Such applications, like those that might provide doctors with pervasive access to medical information, will demand high quality performance according to a variety of different metrics, such as latency, resolution, interactivity, and perceptual quality. ❧ We have proposed a novel system for interactive, fast, and random access and navigation of large datasets. Of particular interest in our system is the random retrieval of lower dimensional data from high dimensional datasets. The system makes it possible to allow limited memory mobile devices to quickly access complex large datasets over low-bandwidth connections. This approach can reduce the transmission rate dramatically (by factor of 2) and also improve the level of interactive navigation. Both 2D and 3D systems, referring to the dimensionality of the datasets that may be accessed, for fast and random access have been developed and each system is composed of a tiling scheme, linear searching algorithm, compression methodology, mapping algorithm, and reconstruction scheme. The mapping algorithms can also be applied to various other applications and areas. We also have proposed models for parameter selection and system optimization, tools to both analyze and quantify the benefits of our proposed re-mapping algorithm as well as wavelet based approach 3D system. This work offers both theoretical and practical contributions and can be used in a wide-array of exciting future applications. Advisors/Committee Members: Ortega, Antonio (Committee Chair), Teng, Shang-Hua (Committee Member), Leahy, Richard M. (Committee Member).

Subjects/Keywords: fast random access; large datasets; interactive

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fan, Z. (2011). Interactive fast random access, retrieval, and navigation of large datasets. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/651579/rec/3568

Chicago Manual of Style (16th Edition):

Fan, Zihong. “Interactive fast random access, retrieval, and navigation of large datasets.” 2011. Doctoral Dissertation, University of Southern California. Accessed October 18, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/651579/rec/3568.

MLA Handbook (7th Edition):

Fan, Zihong. “Interactive fast random access, retrieval, and navigation of large datasets.” 2011. Web. 18 Oct 2019.

Vancouver:

Fan Z. Interactive fast random access, retrieval, and navigation of large datasets. [Internet] [Doctoral dissertation]. University of Southern California; 2011. [cited 2019 Oct 18]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/651579/rec/3568.

Council of Science Editors:

Fan Z. Interactive fast random access, retrieval, and navigation of large datasets. [Doctoral Dissertation]. University of Southern California; 2011. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/651579/rec/3568


NSYSU

2. Lin, Yi-ling. Study on Affection of Thermal Effect to Switching Mechanism during Reset Process in One Transistor One RRAM Device (1T1R).

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

In this study, we further research the switching mechanism during reset process in one-transistor-one-resistance random access memory (1T1R) devices. When conducting RRAM measurement, step voltage has a great influence on I-V characteristics. In this thesis, fast-IV measurement has been applied on a 1T1R RRAM to explore relations between input energy and switching speed by use of applying fixed period triangle pulse with different rising time. Experiments results shows as increasing input energy, the resistance switching speed will increase at the same time. In addition, heat effect to RRAM switching speed was also investigated, which was seldom discussed in previous studies. Environment factors in both high temperature (350K) and low temperature (77K) are investigated. We find the input energy easily dissipates in 77K temperature, making switching speed become slow. However, the input energy accumulates between conducting filament and electrode at 350K temperature, creating higher switching speed. Thus, the relation between input energy and switching speed has been proved. Moreover, we calculated the conduction filament temperature by the relationship between Ohmic conduction and temperature for verified the actual operating temperature during reset process. In addition, we proposed a model to explain the relationship between low resistance state, LRS and reset voltage. In relatively low and high resistance, the reset voltage was dominated by the quantity and distance of oxygen ions which were generated while set process. Moreover, an abnormal trend between low resistance state, LRS and reset voltage were observed in relatively middle resistance. We found out the abnormal trend between LRS and reset voltage was dominated by current thermal effect. Furthermore, the relationship between reset voltage and high resistance state (HRS) was further research. Under relatively high and low reset voltage, the resistance of HRS was dominated by the quantity and distance of controllable oxygen ions. On the other hand, the resistance of HRS was dominated by current thermal effect under relatively middle reset voltage. Key words: Resistance Random Access Memory, Reset process, 1T1R, current thermal effect Advisors/Committee Members: Jung-Hui Chen (chair), Tsung-Ming Tsai (committee member), Ting-Chang Chang (chair).

Subjects/Keywords: Reset process; 1T1R; Fast IV; Resistance Random Access Memory; current thermal effect

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, Y. (2016). Study on Affection of Thermal Effect to Switching Mechanism during Reset Process in One Transistor One RRAM Device (1T1R). (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625116-213343

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Yi-ling. “Study on Affection of Thermal Effect to Switching Mechanism during Reset Process in One Transistor One RRAM Device (1T1R).” 2016. Thesis, NSYSU. Accessed October 18, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625116-213343.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Yi-ling. “Study on Affection of Thermal Effect to Switching Mechanism during Reset Process in One Transistor One RRAM Device (1T1R).” 2016. Web. 18 Oct 2019.

Vancouver:

Lin Y. Study on Affection of Thermal Effect to Switching Mechanism during Reset Process in One Transistor One RRAM Device (1T1R). [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Oct 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625116-213343.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin Y. Study on Affection of Thermal Effect to Switching Mechanism during Reset Process in One Transistor One RRAM Device (1T1R). [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625116-213343

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.