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You searched for subject:(epitaxy). Showing records 121 – 150 of 764 total matches.

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UCLA

121. Reyner, Charles. GaSb-based Infrared Detectors on GaAs Substrates using an Interfacial Misfit Array.

Degree: Electrical Engineering, 2013, UCLA

 Infrared detectors based on compound semiconductor technology are on the verge of outperforming HgCdTe, the leading infrared material for the past 50 years. The driving… (more)

Subjects/Keywords: Electrical engineering; APD; GaSb; Heteroepitaxy; Molecular Beam Epitaxy

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Reyner, C. (2013). GaSb-based Infrared Detectors on GaAs Substrates using an Interfacial Misfit Array. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/16k9t7sc

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Reyner, Charles. “GaSb-based Infrared Detectors on GaAs Substrates using an Interfacial Misfit Array.” 2013. Thesis, UCLA. Accessed November 20, 2019. http://www.escholarship.org/uc/item/16k9t7sc.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Reyner, Charles. “GaSb-based Infrared Detectors on GaAs Substrates using an Interfacial Misfit Array.” 2013. Web. 20 Nov 2019.

Vancouver:

Reyner C. GaSb-based Infrared Detectors on GaAs Substrates using an Interfacial Misfit Array. [Internet] [Thesis]. UCLA; 2013. [cited 2019 Nov 20]. Available from: http://www.escholarship.org/uc/item/16k9t7sc.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Reyner C. GaSb-based Infrared Detectors on GaAs Substrates using an Interfacial Misfit Array. [Thesis]. UCLA; 2013. Available from: http://www.escholarship.org/uc/item/16k9t7sc

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


UCLA

122. Shapiro, Joshua. Hetero-epitaxy and Defect Formation in Nanopillars: An Experimental and Theoretical Study.

Degree: Electrical Engineering, 2013, UCLA

 Nanopillars are a next generation platform for building high-performance opto-electronic devices. The uniform arrays of III-V semiconductor pillars are microns long, vertically oriented, and have… (more)

Subjects/Keywords: Electrical engineering; Materials Science; Defects; DFT; hetero-epitaxy; Nanopillars

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APA (6th Edition):

Shapiro, J. (2013). Hetero-epitaxy and Defect Formation in Nanopillars: An Experimental and Theoretical Study. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/4mj9z6cv

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Shapiro, Joshua. “Hetero-epitaxy and Defect Formation in Nanopillars: An Experimental and Theoretical Study.” 2013. Thesis, UCLA. Accessed November 20, 2019. http://www.escholarship.org/uc/item/4mj9z6cv.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Shapiro, Joshua. “Hetero-epitaxy and Defect Formation in Nanopillars: An Experimental and Theoretical Study.” 2013. Web. 20 Nov 2019.

Vancouver:

Shapiro J. Hetero-epitaxy and Defect Formation in Nanopillars: An Experimental and Theoretical Study. [Internet] [Thesis]. UCLA; 2013. [cited 2019 Nov 20]. Available from: http://www.escholarship.org/uc/item/4mj9z6cv.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Shapiro J. Hetero-epitaxy and Defect Formation in Nanopillars: An Experimental and Theoretical Study. [Thesis]. UCLA; 2013. Available from: http://www.escholarship.org/uc/item/4mj9z6cv

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Montana State University

123. McClure, Adam Marc. Epitaxial thin film deposition of magnetostrictive materials and its effect on magnetic anisotropy.

Degree: College of Letters & Science, 2012, Montana State University

 Magnetostriction means that the dimensions of a material depend on its magnetization. The primary goal of this dissertation was to understand the effect of magnetostriction… (more)

Subjects/Keywords: Magnetostriction.; Molecular beam epitaxy.; X-ray spectroscopy.; Electrons Diffraction.

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APA (6th Edition):

McClure, A. M. (2012). Epitaxial thin film deposition of magnetostrictive materials and its effect on magnetic anisotropy. (Thesis). Montana State University. Retrieved from https://scholarworks.montana.edu/xmlui/handle/1/1818

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

McClure, Adam Marc. “Epitaxial thin film deposition of magnetostrictive materials and its effect on magnetic anisotropy.” 2012. Thesis, Montana State University. Accessed November 20, 2019. https://scholarworks.montana.edu/xmlui/handle/1/1818.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

McClure, Adam Marc. “Epitaxial thin film deposition of magnetostrictive materials and its effect on magnetic anisotropy.” 2012. Web. 20 Nov 2019.

Vancouver:

McClure AM. Epitaxial thin film deposition of magnetostrictive materials and its effect on magnetic anisotropy. [Internet] [Thesis]. Montana State University; 2012. [cited 2019 Nov 20]. Available from: https://scholarworks.montana.edu/xmlui/handle/1/1818.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

McClure AM. Epitaxial thin film deposition of magnetostrictive materials and its effect on magnetic anisotropy. [Thesis]. Montana State University; 2012. Available from: https://scholarworks.montana.edu/xmlui/handle/1/1818

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Victoria

124. Bahrami Yekta, Vahid. Optimization of growth conditions of GaAs1-xBix alloys for laser applications.

Degree: Department of Electrical and Computer Engineering, 2016, University of Victoria

 GaAsBi is a relatively unexplored alloy with interesting features such as a large bandgap reduction for a given lattice mismatch with GaAs substrates and good… (more)

Subjects/Keywords: Molecular Beam Epitaxy; GaAsBi; Semiconductor laser; Ultra High vacuum; crystal defects

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APA (6th Edition):

Bahrami Yekta, V. (2016). Optimization of growth conditions of GaAs1-xBix alloys for laser applications. (Thesis). University of Victoria. Retrieved from http://hdl.handle.net/1828/7099

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bahrami Yekta, Vahid. “Optimization of growth conditions of GaAs1-xBix alloys for laser applications.” 2016. Thesis, University of Victoria. Accessed November 20, 2019. http://hdl.handle.net/1828/7099.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bahrami Yekta, Vahid. “Optimization of growth conditions of GaAs1-xBix alloys for laser applications.” 2016. Web. 20 Nov 2019.

Vancouver:

Bahrami Yekta V. Optimization of growth conditions of GaAs1-xBix alloys for laser applications. [Internet] [Thesis]. University of Victoria; 2016. [cited 2019 Nov 20]. Available from: http://hdl.handle.net/1828/7099.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bahrami Yekta V. Optimization of growth conditions of GaAs1-xBix alloys for laser applications. [Thesis]. University of Victoria; 2016. Available from: http://hdl.handle.net/1828/7099

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

125. Basak, Amrita. Advanced powder bed fusion-based additive manufacturing with turbine engine hot-section alloys through scanning laser epitaxy.

Degree: PhD, Mechanical Engineering, 2017, Georgia Tech

 Nickel-base superalloys are extensively used in the fabrication of gas turbine hot-section components as this class of alloys offers higher yield strength with increase in… (more)

Subjects/Keywords: Nickel-base; Superalloys; Additive manufacturing; Scanning laser epitaxy

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APA (6th Edition):

Basak, A. (2017). Advanced powder bed fusion-based additive manufacturing with turbine engine hot-section alloys through scanning laser epitaxy. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59230

Chicago Manual of Style (16th Edition):

Basak, Amrita. “Advanced powder bed fusion-based additive manufacturing with turbine engine hot-section alloys through scanning laser epitaxy.” 2017. Doctoral Dissertation, Georgia Tech. Accessed November 20, 2019. http://hdl.handle.net/1853/59230.

MLA Handbook (7th Edition):

Basak, Amrita. “Advanced powder bed fusion-based additive manufacturing with turbine engine hot-section alloys through scanning laser epitaxy.” 2017. Web. 20 Nov 2019.

Vancouver:

Basak A. Advanced powder bed fusion-based additive manufacturing with turbine engine hot-section alloys through scanning laser epitaxy. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2019 Nov 20]. Available from: http://hdl.handle.net/1853/59230.

Council of Science Editors:

Basak A. Advanced powder bed fusion-based additive manufacturing with turbine engine hot-section alloys through scanning laser epitaxy. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/59230


McMaster University

126. Kuyanov, Paul. Nanowire Quantum Dot Photodetectors.

Degree: PhD, 2017, McMaster University

InAs/GaAs quantum dots (QDs) embedded within InP/GaP nanowires (NWs) were grown on Si substrates by Au-assisted and self-assisted vapor-liquid-solid (VLS) growth using molecular beam epitaxy(more)

Subjects/Keywords: nanowires; photodetector; quantum dot; III-V; silicon; molecular beam epitaxy

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APA (6th Edition):

Kuyanov, P. (2017). Nanowire Quantum Dot Photodetectors. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/22735

Chicago Manual of Style (16th Edition):

Kuyanov, Paul. “Nanowire Quantum Dot Photodetectors.” 2017. Doctoral Dissertation, McMaster University. Accessed November 20, 2019. http://hdl.handle.net/11375/22735.

MLA Handbook (7th Edition):

Kuyanov, Paul. “Nanowire Quantum Dot Photodetectors.” 2017. Web. 20 Nov 2019.

Vancouver:

Kuyanov P. Nanowire Quantum Dot Photodetectors. [Internet] [Doctoral dissertation]. McMaster University; 2017. [cited 2019 Nov 20]. Available from: http://hdl.handle.net/11375/22735.

Council of Science Editors:

Kuyanov P. Nanowire Quantum Dot Photodetectors. [Doctoral Dissertation]. McMaster University; 2017. Available from: http://hdl.handle.net/11375/22735

127. Zhao, Yu. Growth and optical characterization of Sb-based materials on InP for optical telecommunication : Croissance et caractérisation optique des matériaux à base d'antimoine sur substrat InP pour les télécommunications optiques.

Degree: Docteur es, Physique-Optoélectronique, 2014, Rennes, INSA

Ce travail de thèse porte sur la croissance et sur la caractérisation optique de nanostructures à base d’antimoine sur substrats InP, en vue d’applications dans… (more)

Subjects/Keywords: Antimoine; Molecular beam epitaxy; Nanostructures; Optoelectronics; Compound semiconductors; 621.382

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APA (6th Edition):

Zhao, Y. (2014). Growth and optical characterization of Sb-based materials on InP for optical telecommunication : Croissance et caractérisation optique des matériaux à base d'antimoine sur substrat InP pour les télécommunications optiques. (Doctoral Dissertation). Rennes, INSA. Retrieved from http://www.theses.fr/2014ISAR0002

Chicago Manual of Style (16th Edition):

Zhao, Yu. “Growth and optical characterization of Sb-based materials on InP for optical telecommunication : Croissance et caractérisation optique des matériaux à base d'antimoine sur substrat InP pour les télécommunications optiques.” 2014. Doctoral Dissertation, Rennes, INSA. Accessed November 20, 2019. http://www.theses.fr/2014ISAR0002.

MLA Handbook (7th Edition):

Zhao, Yu. “Growth and optical characterization of Sb-based materials on InP for optical telecommunication : Croissance et caractérisation optique des matériaux à base d'antimoine sur substrat InP pour les télécommunications optiques.” 2014. Web. 20 Nov 2019.

Vancouver:

Zhao Y. Growth and optical characterization of Sb-based materials on InP for optical telecommunication : Croissance et caractérisation optique des matériaux à base d'antimoine sur substrat InP pour les télécommunications optiques. [Internet] [Doctoral dissertation]. Rennes, INSA; 2014. [cited 2019 Nov 20]. Available from: http://www.theses.fr/2014ISAR0002.

Council of Science Editors:

Zhao Y. Growth and optical characterization of Sb-based materials on InP for optical telecommunication : Croissance et caractérisation optique des matériaux à base d'antimoine sur substrat InP pour les télécommunications optiques. [Doctoral Dissertation]. Rennes, INSA; 2014. Available from: http://www.theses.fr/2014ISAR0002


NSYSU

128. Lin, Yu-Chiao. Growth and characterization of M-plane III-nitride thin films heterostructure by plasma-assisted molecular beam epitaxy.

Degree: PhD, Physics, 2018, NSYSU

 In this thesis, several series of M-plane (In)GaN were grown by plasma assisted molecular beam epitaxy. We have grown several GaN samples on sapphire(0001) substrates… (more)

Subjects/Keywords: LiAlO2; Molecular beam epitaxy; Misoriented; Quautum well; M-plane InGaN/GaN

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APA (6th Edition):

Lin, Y. (2018). Growth and characterization of M-plane III-nitride thin films heterostructure by plasma-assisted molecular beam epitaxy. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0512118-160115

Chicago Manual of Style (16th Edition):

Lin, Yu-Chiao. “Growth and characterization of M-plane III-nitride thin films heterostructure by plasma-assisted molecular beam epitaxy.” 2018. Doctoral Dissertation, NSYSU. Accessed November 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0512118-160115.

MLA Handbook (7th Edition):

Lin, Yu-Chiao. “Growth and characterization of M-plane III-nitride thin films heterostructure by plasma-assisted molecular beam epitaxy.” 2018. Web. 20 Nov 2019.

Vancouver:

Lin Y. Growth and characterization of M-plane III-nitride thin films heterostructure by plasma-assisted molecular beam epitaxy. [Internet] [Doctoral dissertation]. NSYSU; 2018. [cited 2019 Nov 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0512118-160115.

Council of Science Editors:

Lin Y. Growth and characterization of M-plane III-nitride thin films heterostructure by plasma-assisted molecular beam epitaxy. [Doctoral Dissertation]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0512118-160115


Hong Kong University of Science and Technology

129. Luo, Tao MATH. Analysis of epitaxial growth and dislocation models at different scales.

Degree: 2017, Hong Kong University of Science and Technology

 In the first part of this thesis, we study the epitaxial growth on vicinal surfaces, where elasticity effects give rise to step bunching instability and… (more)

Subjects/Keywords: Epitaxy; Mathematical models; Dislocations in crystals; Discrete geometry

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APA (6th Edition):

Luo, T. M. (2017). Analysis of epitaxial growth and dislocation models at different scales. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-991012564466903412 ; http://repository.ust.hk/ir/bitstream/1783.1-91179/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Luo, Tao MATH. “Analysis of epitaxial growth and dislocation models at different scales.” 2017. Thesis, Hong Kong University of Science and Technology. Accessed November 20, 2019. https://doi.org/10.14711/thesis-991012564466903412 ; http://repository.ust.hk/ir/bitstream/1783.1-91179/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Luo, Tao MATH. “Analysis of epitaxial growth and dislocation models at different scales.” 2017. Web. 20 Nov 2019.

Vancouver:

Luo TM. Analysis of epitaxial growth and dislocation models at different scales. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2017. [cited 2019 Nov 20]. Available from: https://doi.org/10.14711/thesis-991012564466903412 ; http://repository.ust.hk/ir/bitstream/1783.1-91179/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Luo TM. Analysis of epitaxial growth and dislocation models at different scales. [Thesis]. Hong Kong University of Science and Technology; 2017. Available from: https://doi.org/10.14711/thesis-991012564466903412 ; http://repository.ust.hk/ir/bitstream/1783.1-91179/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


McMaster University

130. Robson, Mitchell. Antimonide Nanowires for Multispectral Infrared Photodetection.

Degree: PhD, 2018, McMaster University

Multispectral capabilities of nanowires (NWs) were explored for InAs and InAsSb NWs on Si(111) substrates. NWs were grown with the vapour-solid (VS) growth mode in… (more)

Subjects/Keywords: Nanowires; Infrared; Semiconductor; Antimony; Silicon; Selective-area epitaxy; Multispectral; MBE

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APA (6th Edition):

Robson, M. (2018). Antimonide Nanowires for Multispectral Infrared Photodetection. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/23892

Chicago Manual of Style (16th Edition):

Robson, Mitchell. “Antimonide Nanowires for Multispectral Infrared Photodetection.” 2018. Doctoral Dissertation, McMaster University. Accessed November 20, 2019. http://hdl.handle.net/11375/23892.

MLA Handbook (7th Edition):

Robson, Mitchell. “Antimonide Nanowires for Multispectral Infrared Photodetection.” 2018. Web. 20 Nov 2019.

Vancouver:

Robson M. Antimonide Nanowires for Multispectral Infrared Photodetection. [Internet] [Doctoral dissertation]. McMaster University; 2018. [cited 2019 Nov 20]. Available from: http://hdl.handle.net/11375/23892.

Council of Science Editors:

Robson M. Antimonide Nanowires for Multispectral Infrared Photodetection. [Doctoral Dissertation]. McMaster University; 2018. Available from: http://hdl.handle.net/11375/23892


Hong Kong University of Science and Technology

131. Li, Hongxi PHYS. MBE growth and physical properties of Cr₂Te₃ thin films.

Degree: 2018, Hong Kong University of Science and Technology

 In this thesis work, single crystal Cr2Te3 thin films were successfully grown by the Molecular Beam Epitaxy technique. Crystal structure characterizations and chemical composition analyses… (more)

Subjects/Keywords: Molecular beam epitaxy; Transition metal compounds; Magnetic properties; Thin films; Chalcogenides

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APA (6th Edition):

Li, H. P. (2018). MBE growth and physical properties of Cr₂Te₃ thin films. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-991012656668103412 ; http://repository.ust.hk/ir/bitstream/1783.1-96251/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Hongxi PHYS. “MBE growth and physical properties of Cr₂Te₃ thin films.” 2018. Thesis, Hong Kong University of Science and Technology. Accessed November 20, 2019. https://doi.org/10.14711/thesis-991012656668103412 ; http://repository.ust.hk/ir/bitstream/1783.1-96251/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Hongxi PHYS. “MBE growth and physical properties of Cr₂Te₃ thin films.” 2018. Web. 20 Nov 2019.

Vancouver:

Li HP. MBE growth and physical properties of Cr₂Te₃ thin films. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2018. [cited 2019 Nov 20]. Available from: https://doi.org/10.14711/thesis-991012656668103412 ; http://repository.ust.hk/ir/bitstream/1783.1-96251/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li HP. MBE growth and physical properties of Cr₂Te₃ thin films. [Thesis]. Hong Kong University of Science and Technology; 2018. Available from: https://doi.org/10.14711/thesis-991012656668103412 ; http://repository.ust.hk/ir/bitstream/1783.1-96251/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

132. Tellekamp, Marshall B. Lithium niobium oxide multifunctional materials and applications in neuromorphic computing.

Degree: PhD, Electrical and Computer Engineering, 2017, Georgia Tech

 This work explores the growth fundamentals and multifunctional applications of materials in the Li-Nb-O family with specific focus on the memristive applications of LiNbO2 as… (more)

Subjects/Keywords: Lithium niobite; Molecular beam epitaxy; Lithium niobate; Thin films; Neuromorphic computing

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APA (6th Edition):

Tellekamp, M. B. (2017). Lithium niobium oxide multifunctional materials and applications in neuromorphic computing. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/60701

Chicago Manual of Style (16th Edition):

Tellekamp, Marshall B. “Lithium niobium oxide multifunctional materials and applications in neuromorphic computing.” 2017. Doctoral Dissertation, Georgia Tech. Accessed November 20, 2019. http://hdl.handle.net/1853/60701.

MLA Handbook (7th Edition):

Tellekamp, Marshall B. “Lithium niobium oxide multifunctional materials and applications in neuromorphic computing.” 2017. Web. 20 Nov 2019.

Vancouver:

Tellekamp MB. Lithium niobium oxide multifunctional materials and applications in neuromorphic computing. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2019 Nov 20]. Available from: http://hdl.handle.net/1853/60701.

Council of Science Editors:

Tellekamp MB. Lithium niobium oxide multifunctional materials and applications in neuromorphic computing. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/60701


Cornell University

133. Monkman, Eric. Revealing Electronic Structure In Atomically-Engineered Manganite Thin Films .

Degree: 2014, Cornell University

Subjects/Keywords: ARPES; Manganites; Molecular-beam epitaxy

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APA (6th Edition):

Monkman, E. (2014). Revealing Electronic Structure In Atomically-Engineered Manganite Thin Films . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/37162

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Monkman, Eric. “Revealing Electronic Structure In Atomically-Engineered Manganite Thin Films .” 2014. Thesis, Cornell University. Accessed November 20, 2019. http://hdl.handle.net/1813/37162.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Monkman, Eric. “Revealing Electronic Structure In Atomically-Engineered Manganite Thin Films .” 2014. Web. 20 Nov 2019.

Vancouver:

Monkman E. Revealing Electronic Structure In Atomically-Engineered Manganite Thin Films . [Internet] [Thesis]. Cornell University; 2014. [cited 2019 Nov 20]. Available from: http://hdl.handle.net/1813/37162.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Monkman E. Revealing Electronic Structure In Atomically-Engineered Manganite Thin Films . [Thesis]. Cornell University; 2014. Available from: http://hdl.handle.net/1813/37162

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Oklahoma

134. Wickramasinghe, Kaushini. MOLECULAR BEAM EPITAXY OF ANTIMONY QUANTUM WELLS FOR PROBING TOPOLOGICAL SURFACE STATES.

Degree: PhD, 2017, University of Oklahoma

 A topoelectronic transition was predicted for an Sb quantum well (QW) as a function of QW thickness. Bulk Sb is a semimetal with a negative… (more)

Subjects/Keywords: Molecular Beam Epitaxy growth and characterization; Topological Insulators

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APA (6th Edition):

Wickramasinghe, K. (2017). MOLECULAR BEAM EPITAXY OF ANTIMONY QUANTUM WELLS FOR PROBING TOPOLOGICAL SURFACE STATES. (Doctoral Dissertation). University of Oklahoma. Retrieved from http://hdl.handle.net/11244/50910

Chicago Manual of Style (16th Edition):

Wickramasinghe, Kaushini. “MOLECULAR BEAM EPITAXY OF ANTIMONY QUANTUM WELLS FOR PROBING TOPOLOGICAL SURFACE STATES.” 2017. Doctoral Dissertation, University of Oklahoma. Accessed November 20, 2019. http://hdl.handle.net/11244/50910.

MLA Handbook (7th Edition):

Wickramasinghe, Kaushini. “MOLECULAR BEAM EPITAXY OF ANTIMONY QUANTUM WELLS FOR PROBING TOPOLOGICAL SURFACE STATES.” 2017. Web. 20 Nov 2019.

Vancouver:

Wickramasinghe K. MOLECULAR BEAM EPITAXY OF ANTIMONY QUANTUM WELLS FOR PROBING TOPOLOGICAL SURFACE STATES. [Internet] [Doctoral dissertation]. University of Oklahoma; 2017. [cited 2019 Nov 20]. Available from: http://hdl.handle.net/11244/50910.

Council of Science Editors:

Wickramasinghe K. MOLECULAR BEAM EPITAXY OF ANTIMONY QUANTUM WELLS FOR PROBING TOPOLOGICAL SURFACE STATES. [Doctoral Dissertation]. University of Oklahoma; 2017. Available from: http://hdl.handle.net/11244/50910

135. Eftychis, Savvas. Spontaneous and selective growth of GaN nanowires on Si (111) substrates by molecular beam epitaxy.

Degree: 2018, University of Crete (UOC); Πανεπιστήμιο Κρήτης

 Spontaneously grown gallium nitride (GaN) nanowires (NWs) by the use of plasma assisted molecular beam epitaxy (PAMBE) are a subject of active research due to… (more)

Subjects/Keywords: Νανονήματα; Επίταξη με μοριακές δέσμες; Nanowires; Molecular beam epitaxy (MBE)

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APA (6th Edition):

Eftychis, S. (2018). Spontaneous and selective growth of GaN nanowires on Si (111) substrates by molecular beam epitaxy. (Thesis). University of Crete (UOC); Πανεπιστήμιο Κρήτης. Retrieved from http://hdl.handle.net/10442/hedi/44799

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Eftychis, Savvas. “Spontaneous and selective growth of GaN nanowires on Si (111) substrates by molecular beam epitaxy.” 2018. Thesis, University of Crete (UOC); Πανεπιστήμιο Κρήτης. Accessed November 20, 2019. http://hdl.handle.net/10442/hedi/44799.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Eftychis, Savvas. “Spontaneous and selective growth of GaN nanowires on Si (111) substrates by molecular beam epitaxy.” 2018. Web. 20 Nov 2019.

Vancouver:

Eftychis S. Spontaneous and selective growth of GaN nanowires on Si (111) substrates by molecular beam epitaxy. [Internet] [Thesis]. University of Crete (UOC); Πανεπιστήμιο Κρήτης; 2018. [cited 2019 Nov 20]. Available from: http://hdl.handle.net/10442/hedi/44799.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Eftychis S. Spontaneous and selective growth of GaN nanowires on Si (111) substrates by molecular beam epitaxy. [Thesis]. University of Crete (UOC); Πανεπιστήμιο Κρήτης; 2018. Available from: http://hdl.handle.net/10442/hedi/44799

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


McMaster University

136. Miki, Carley. Growth and Characterization of CdTe/ZnTe Thin Films and Heterostructures.

Degree: MSc, 2014, McMaster University

CdTe and ZnTe are common semiconductors, currently used in a wide variety of applications. Heterostructures, composed of two or more layered materials, create further potential… (more)

Subjects/Keywords: Thin Films; Pulsed laser deposition; Heterostructure; CdTe; Crystal structure; ZnTe; Epitaxy

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APA (6th Edition):

Miki, C. (2014). Growth and Characterization of CdTe/ZnTe Thin Films and Heterostructures. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/16288

Chicago Manual of Style (16th Edition):

Miki, Carley. “Growth and Characterization of CdTe/ZnTe Thin Films and Heterostructures.” 2014. Masters Thesis, McMaster University. Accessed November 20, 2019. http://hdl.handle.net/11375/16288.

MLA Handbook (7th Edition):

Miki, Carley. “Growth and Characterization of CdTe/ZnTe Thin Films and Heterostructures.” 2014. Web. 20 Nov 2019.

Vancouver:

Miki C. Growth and Characterization of CdTe/ZnTe Thin Films and Heterostructures. [Internet] [Masters thesis]. McMaster University; 2014. [cited 2019 Nov 20]. Available from: http://hdl.handle.net/11375/16288.

Council of Science Editors:

Miki C. Growth and Characterization of CdTe/ZnTe Thin Films and Heterostructures. [Masters Thesis]. McMaster University; 2014. Available from: http://hdl.handle.net/11375/16288


NSYSU

137. Chen, Zih-min. Study on thin film and heterostructure growth of Cu2O/ZnxMg1-xO on MgO substrate.

Degree: Master, Materials and Optoelectronic Science, 2018, NSYSU

 Cu2O/ZnxMg1-xO epilayers and heteroepitaxial structures were grown on MgO substrates with low lattice mismatch by molecular beam epitaxy. MgO substrates with three orientations: (100), (110)… (more)

Subjects/Keywords: Cu2O; ZnO; ZnxMg1-xO; MgO substrate; Molecular beam epitaxy

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APA (6th Edition):

Chen, Z. (2018). Study on thin film and heterostructure growth of Cu2O/ZnxMg1-xO on MgO substrate. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803118-115227

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Zih-min. “Study on thin film and heterostructure growth of Cu2O/ZnxMg1-xO on MgO substrate.” 2018. Thesis, NSYSU. Accessed November 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803118-115227.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Zih-min. “Study on thin film and heterostructure growth of Cu2O/ZnxMg1-xO on MgO substrate.” 2018. Web. 20 Nov 2019.

Vancouver:

Chen Z. Study on thin film and heterostructure growth of Cu2O/ZnxMg1-xO on MgO substrate. [Internet] [Thesis]. NSYSU; 2018. [cited 2019 Nov 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803118-115227.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Z. Study on thin film and heterostructure growth of Cu2O/ZnxMg1-xO on MgO substrate. [Thesis]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803118-115227

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


UCLA

138. Young, Eric. Wafer Scale Synthesis of Thin Film Black Arsenic Phosphorus.

Degree: Materials Science and Engineering, 2018, UCLA

 Herein we report the wafer-scale synthesis of few-layered black arsenic phosphorus (b- AsP) alloys via two-step solid-source molecular beam deposition (MBD) and subsequent hermetic thermal… (more)

Subjects/Keywords: Materials Science; 2D Materials; Molecular Beam Epitaxy; Semiconductors

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APA (6th Edition):

Young, E. (2018). Wafer Scale Synthesis of Thin Film Black Arsenic Phosphorus. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/2km2s5mp

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Young, Eric. “Wafer Scale Synthesis of Thin Film Black Arsenic Phosphorus.” 2018. Thesis, UCLA. Accessed November 20, 2019. http://www.escholarship.org/uc/item/2km2s5mp.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Young, Eric. “Wafer Scale Synthesis of Thin Film Black Arsenic Phosphorus.” 2018. Web. 20 Nov 2019.

Vancouver:

Young E. Wafer Scale Synthesis of Thin Film Black Arsenic Phosphorus. [Internet] [Thesis]. UCLA; 2018. [cited 2019 Nov 20]. Available from: http://www.escholarship.org/uc/item/2km2s5mp.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Young E. Wafer Scale Synthesis of Thin Film Black Arsenic Phosphorus. [Thesis]. UCLA; 2018. Available from: http://www.escholarship.org/uc/item/2km2s5mp

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université Catholique de Louvain

139. Kim, Ara. Nanostructured Ru/TiO2 catalysts for CO2 methanation.

Degree: 2016, Université Catholique de Louvain

The hydrogenation of CO2 performed through heterogeneous catalysis is a pertinent strategy for mitigating CO2 emissions. This thesis aims to contribute to the understanding of… (more)

Subjects/Keywords: CO2 methanation; Epitaxy; Titanium dioxide; Ruthenium; Ruthenium dioxide nanoparticles

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APA (6th Edition):

Kim, A. (2016). Nanostructured Ru/TiO2 catalysts for CO2 methanation. (Thesis). Université Catholique de Louvain. Retrieved from http://hdl.handle.net/2078.1/171747

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kim, Ara. “Nanostructured Ru/TiO2 catalysts for CO2 methanation.” 2016. Thesis, Université Catholique de Louvain. Accessed November 20, 2019. http://hdl.handle.net/2078.1/171747.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kim, Ara. “Nanostructured Ru/TiO2 catalysts for CO2 methanation.” 2016. Web. 20 Nov 2019.

Vancouver:

Kim A. Nanostructured Ru/TiO2 catalysts for CO2 methanation. [Internet] [Thesis]. Université Catholique de Louvain; 2016. [cited 2019 Nov 20]. Available from: http://hdl.handle.net/2078.1/171747.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kim A. Nanostructured Ru/TiO2 catalysts for CO2 methanation. [Thesis]. Université Catholique de Louvain; 2016. Available from: http://hdl.handle.net/2078.1/171747

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

140. Castellano, Andrea. Laser telecom à base de GaSb. Intégration sur Silicium : GaSb based telecom laser. Integration on Silicon.

Degree: Docteur es, Électronique, 2016, Montpellier

Le transfert des données est le principal défi pour répondre à la demande croissante d’échange d’informations au 21eme siècle. Une amélioration possible des dispositifs actuels… (more)

Subjects/Keywords: Laser; GaSb; Epitaxie; Silicium; Telecom; Laser; GaSb; Epitaxy; Silicon; Telecom

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APA (6th Edition):

Castellano, A. (2016). Laser telecom à base de GaSb. Intégration sur Silicium : GaSb based telecom laser. Integration on Silicon. (Doctoral Dissertation). Montpellier. Retrieved from http://www.theses.fr/2016MONTT304

Chicago Manual of Style (16th Edition):

Castellano, Andrea. “Laser telecom à base de GaSb. Intégration sur Silicium : GaSb based telecom laser. Integration on Silicon.” 2016. Doctoral Dissertation, Montpellier. Accessed November 20, 2019. http://www.theses.fr/2016MONTT304.

MLA Handbook (7th Edition):

Castellano, Andrea. “Laser telecom à base de GaSb. Intégration sur Silicium : GaSb based telecom laser. Integration on Silicon.” 2016. Web. 20 Nov 2019.

Vancouver:

Castellano A. Laser telecom à base de GaSb. Intégration sur Silicium : GaSb based telecom laser. Integration on Silicon. [Internet] [Doctoral dissertation]. Montpellier; 2016. [cited 2019 Nov 20]. Available from: http://www.theses.fr/2016MONTT304.

Council of Science Editors:

Castellano A. Laser telecom à base de GaSb. Intégration sur Silicium : GaSb based telecom laser. Integration on Silicon. [Doctoral Dissertation]. Montpellier; 2016. Available from: http://www.theses.fr/2016MONTT304

141. Morassi, Martina. Croissance de nanofils InGaN pour les dispositifs de récupération d’énergie photovoltaïques et piézoélectriques : Growth of InGaN nanowires for photovoltaic and piezoelectric energy harvesting.

Degree: Docteur es, Physique, 2018, Paris Saclay

Les matériaux III-nitrures sont des excellents semi-conducteurs qui présentent plusieurs propriétés intéressantes pour les applications photovoltaïques et piézoélectriques. Au même temps, la croissance epitaxiale de… (more)

Subjects/Keywords: InGaN; Nanofils; Epitaxie; Photovoltaique; InGaN; Nanowires; Epitaxy; Photovoltaic

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APA (6th Edition):

Morassi, M. (2018). Croissance de nanofils InGaN pour les dispositifs de récupération d’énergie photovoltaïques et piézoélectriques : Growth of InGaN nanowires for photovoltaic and piezoelectric energy harvesting. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2018SACLS249

Chicago Manual of Style (16th Edition):

Morassi, Martina. “Croissance de nanofils InGaN pour les dispositifs de récupération d’énergie photovoltaïques et piézoélectriques : Growth of InGaN nanowires for photovoltaic and piezoelectric energy harvesting.” 2018. Doctoral Dissertation, Paris Saclay. Accessed November 20, 2019. http://www.theses.fr/2018SACLS249.

MLA Handbook (7th Edition):

Morassi, Martina. “Croissance de nanofils InGaN pour les dispositifs de récupération d’énergie photovoltaïques et piézoélectriques : Growth of InGaN nanowires for photovoltaic and piezoelectric energy harvesting.” 2018. Web. 20 Nov 2019.

Vancouver:

Morassi M. Croissance de nanofils InGaN pour les dispositifs de récupération d’énergie photovoltaïques et piézoélectriques : Growth of InGaN nanowires for photovoltaic and piezoelectric energy harvesting. [Internet] [Doctoral dissertation]. Paris Saclay; 2018. [cited 2019 Nov 20]. Available from: http://www.theses.fr/2018SACLS249.

Council of Science Editors:

Morassi M. Croissance de nanofils InGaN pour les dispositifs de récupération d’énergie photovoltaïques et piézoélectriques : Growth of InGaN nanowires for photovoltaic and piezoelectric energy harvesting. [Doctoral Dissertation]. Paris Saclay; 2018. Available from: http://www.theses.fr/2018SACLS249


The Ohio State University

142. May, Brelon J. Investigation and Engineering of the Homogeneity and Current Injection of Molecular Beam Epitaxy Grown III-Nitride Nanowire Ultraviolet Light Emitting Diodes.

Degree: PhD, Materials Science and Engineering, 2019, The Ohio State University

 Self-assembled nanowires are attractive because of their innate ability to effectively strain relax without the creation of extended defects. This allows for interesting heteroepitaxial growths… (more)

Subjects/Keywords: Materials Science; Electrical Engineering; LED; nanowire; molecular beam epitaxy, ultraviolet

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APA (6th Edition):

May, B. J. (2019). Investigation and Engineering of the Homogeneity and Current Injection of Molecular Beam Epitaxy Grown III-Nitride Nanowire Ultraviolet Light Emitting Diodes. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1546385850422501

Chicago Manual of Style (16th Edition):

May, Brelon J. “Investigation and Engineering of the Homogeneity and Current Injection of Molecular Beam Epitaxy Grown III-Nitride Nanowire Ultraviolet Light Emitting Diodes.” 2019. Doctoral Dissertation, The Ohio State University. Accessed November 20, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1546385850422501.

MLA Handbook (7th Edition):

May, Brelon J. “Investigation and Engineering of the Homogeneity and Current Injection of Molecular Beam Epitaxy Grown III-Nitride Nanowire Ultraviolet Light Emitting Diodes.” 2019. Web. 20 Nov 2019.

Vancouver:

May BJ. Investigation and Engineering of the Homogeneity and Current Injection of Molecular Beam Epitaxy Grown III-Nitride Nanowire Ultraviolet Light Emitting Diodes. [Internet] [Doctoral dissertation]. The Ohio State University; 2019. [cited 2019 Nov 20]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1546385850422501.

Council of Science Editors:

May BJ. Investigation and Engineering of the Homogeneity and Current Injection of Molecular Beam Epitaxy Grown III-Nitride Nanowire Ultraviolet Light Emitting Diodes. [Doctoral Dissertation]. The Ohio State University; 2019. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1546385850422501


University of California – San Diego

143. Tanaka, Atsunori. Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth.

Degree: Materials Science and Engineering, 2019, University of California – San Diego

 Gallium nitride (GaN) is now widely used in commercial white Light Emitting Diodes (LEDs) thanks to the emergence of high-brightness GaN blue LEDs in 1990s.… (more)

Subjects/Keywords: Materials Science; Electrical engineering; Epitaxy; GaN; MOCVD; Power Device; Selective Growth

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APA (6th Edition):

Tanaka, A. (2019). Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth. (Thesis). University of California – San Diego. Retrieved from http://www.escholarship.org/uc/item/9wz8j1kd

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tanaka, Atsunori. “Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth.” 2019. Thesis, University of California – San Diego. Accessed November 20, 2019. http://www.escholarship.org/uc/item/9wz8j1kd.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tanaka, Atsunori. “Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth.” 2019. Web. 20 Nov 2019.

Vancouver:

Tanaka A. Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth. [Internet] [Thesis]. University of California – San Diego; 2019. [cited 2019 Nov 20]. Available from: http://www.escholarship.org/uc/item/9wz8j1kd.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tanaka A. Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth. [Thesis]. University of California – San Diego; 2019. Available from: http://www.escholarship.org/uc/item/9wz8j1kd

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Waterloo

144. El Gohary, Hassan Gad El Hak Mohamed. Development of Low-Temperature Epitaxial Silicon Films and Application to Solar Cells.

Degree: 2010, University of Waterloo

 Solar photovoltaic has become one of the potential solutions for current energy needs and for combating greenhouse gas emissions. The photovoltaics (PV) industry is booming,… (more)

Subjects/Keywords: Photovoltaics; Epitaxy Growth; Silicon solar cells; Nanostructures; Homojunction; PECVD; TMB

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APA (6th Edition):

El Gohary, H. G. E. H. M. (2010). Development of Low-Temperature Epitaxial Silicon Films and Application to Solar Cells. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/5560

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

El Gohary, Hassan Gad El Hak Mohamed. “Development of Low-Temperature Epitaxial Silicon Films and Application to Solar Cells.” 2010. Thesis, University of Waterloo. Accessed November 20, 2019. http://hdl.handle.net/10012/5560.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

El Gohary, Hassan Gad El Hak Mohamed. “Development of Low-Temperature Epitaxial Silicon Films and Application to Solar Cells.” 2010. Web. 20 Nov 2019.

Vancouver:

El Gohary HGEHM. Development of Low-Temperature Epitaxial Silicon Films and Application to Solar Cells. [Internet] [Thesis]. University of Waterloo; 2010. [cited 2019 Nov 20]. Available from: http://hdl.handle.net/10012/5560.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

El Gohary HGEHM. Development of Low-Temperature Epitaxial Silicon Films and Application to Solar Cells. [Thesis]. University of Waterloo; 2010. Available from: http://hdl.handle.net/10012/5560

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Waterloo

145. Hu, Yunong. Study of unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices.

Degree: 2019, University of Waterloo

 Highly strained interfaces may exist between indium arsenide (InAs) and aluminum antimonide (AlSb) layers grown by Molecular Beam Epitaxy (MBE). The composition and thickness of… (more)

Subjects/Keywords: InAs based quantum cascade laser; molecular beam epitaxy

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APA (6th Edition):

Hu, Y. (2019). Study of unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/14477

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hu, Yunong. “Study of unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices.” 2019. Thesis, University of Waterloo. Accessed November 20, 2019. http://hdl.handle.net/10012/14477.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hu, Yunong. “Study of unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices.” 2019. Web. 20 Nov 2019.

Vancouver:

Hu Y. Study of unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices. [Internet] [Thesis]. University of Waterloo; 2019. [cited 2019 Nov 20]. Available from: http://hdl.handle.net/10012/14477.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hu Y. Study of unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices. [Thesis]. University of Waterloo; 2019. Available from: http://hdl.handle.net/10012/14477

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New Mexico

146. Huang, Shenghong. Microscopy study of extreme lattice mismatched heteroepitaxy using interfacial misfit arrays.

Degree: Electrical and Computer Engineering, 2007, University of New Mexico

 The Sb-bearing compounds offer a wide range of electronic bandgaps, bandgap offsets and electronic barriers along with the extremely high electron mobility and therefore enable… (more)

Subjects/Keywords: Heterostructures; Gallium arsenide semiconductors; Epitaxy

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APA (6th Edition):

Huang, S. (2007). Microscopy study of extreme lattice mismatched heteroepitaxy using interfacial misfit arrays. (Doctoral Dissertation). University of New Mexico. Retrieved from http://hdl.handle.net/1928/3274

Chicago Manual of Style (16th Edition):

Huang, Shenghong. “Microscopy study of extreme lattice mismatched heteroepitaxy using interfacial misfit arrays.” 2007. Doctoral Dissertation, University of New Mexico. Accessed November 20, 2019. http://hdl.handle.net/1928/3274.

MLA Handbook (7th Edition):

Huang, Shenghong. “Microscopy study of extreme lattice mismatched heteroepitaxy using interfacial misfit arrays.” 2007. Web. 20 Nov 2019.

Vancouver:

Huang S. Microscopy study of extreme lattice mismatched heteroepitaxy using interfacial misfit arrays. [Internet] [Doctoral dissertation]. University of New Mexico; 2007. [cited 2019 Nov 20]. Available from: http://hdl.handle.net/1928/3274.

Council of Science Editors:

Huang S. Microscopy study of extreme lattice mismatched heteroepitaxy using interfacial misfit arrays. [Doctoral Dissertation]. University of New Mexico; 2007. Available from: http://hdl.handle.net/1928/3274


University of Delaware

147. Hickey, Ryan. The growth of strain engineered germanium tin alloys for mid-infrared detectors by molecular beam epitaxy .

Degree: 2017, University of Delaware

 Interest in near and mid-infrared optoelectronic devices for sensing, security, medical imaging, and telecommunications has led to an immense effort to create new materials capable… (more)

Subjects/Keywords: Applied sciences; GeSn; Germanium tin; Infrared detectors; MBE; Molecular beam epitaxy

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hickey, R. (2017). The growth of strain engineered germanium tin alloys for mid-infrared detectors by molecular beam epitaxy . (Doctoral Dissertation). University of Delaware. Retrieved from http://udspace.udel.edu/handle/19716/23350

Chicago Manual of Style (16th Edition):

Hickey, Ryan. “The growth of strain engineered germanium tin alloys for mid-infrared detectors by molecular beam epitaxy .” 2017. Doctoral Dissertation, University of Delaware. Accessed November 20, 2019. http://udspace.udel.edu/handle/19716/23350.

MLA Handbook (7th Edition):

Hickey, Ryan. “The growth of strain engineered germanium tin alloys for mid-infrared detectors by molecular beam epitaxy .” 2017. Web. 20 Nov 2019.

Vancouver:

Hickey R. The growth of strain engineered germanium tin alloys for mid-infrared detectors by molecular beam epitaxy . [Internet] [Doctoral dissertation]. University of Delaware; 2017. [cited 2019 Nov 20]. Available from: http://udspace.udel.edu/handle/19716/23350.

Council of Science Editors:

Hickey R. The growth of strain engineered germanium tin alloys for mid-infrared detectors by molecular beam epitaxy . [Doctoral Dissertation]. University of Delaware; 2017. Available from: http://udspace.udel.edu/handle/19716/23350


North Carolina State University

148. Pant, Punam. Characterization of the Nucleation Layer in GaN/Sapphire Heterostructures.

Degree: MS, Materials Science and Engineering, 2005, North Carolina State University

 The objective of this work was to investigate the formation of the GaN nucleation layer during low temperature and high temperature growth and to study… (more)

Subjects/Keywords: Epitaxy; Nucleation Layer; Sapphire; GaN

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pant, P. (2005). Characterization of the Nucleation Layer in GaN/Sapphire Heterostructures. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/1691

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pant, Punam. “Characterization of the Nucleation Layer in GaN/Sapphire Heterostructures.” 2005. Thesis, North Carolina State University. Accessed November 20, 2019. http://www.lib.ncsu.edu/resolver/1840.16/1691.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pant, Punam. “Characterization of the Nucleation Layer in GaN/Sapphire Heterostructures.” 2005. Web. 20 Nov 2019.

Vancouver:

Pant P. Characterization of the Nucleation Layer in GaN/Sapphire Heterostructures. [Internet] [Thesis]. North Carolina State University; 2005. [cited 2019 Nov 20]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/1691.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pant P. Characterization of the Nucleation Layer in GaN/Sapphire Heterostructures. [Thesis]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/1691

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

149. Trichy, Gopinath R. Growth, Characterization and Magnetic Properties of Epitaxial FePt Nanostructures.

Degree: EdD, Materials Science and Engineering, 2008, North Carolina State University

 The primary objective of this dissertation was to study the growth, microstructure and magnetic properties of FePt nanostructures so as to demonstrate their suitability for… (more)

Subjects/Keywords: Magnetic properties; FePt; Epitaxy; nanostructures

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Trichy, G. R. (2008). Growth, Characterization and Magnetic Properties of Epitaxial FePt Nanostructures. (Thesis). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4383

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Trichy, Gopinath R. “Growth, Characterization and Magnetic Properties of Epitaxial FePt Nanostructures.” 2008. Thesis, North Carolina State University. Accessed November 20, 2019. http://www.lib.ncsu.edu/resolver/1840.16/4383.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Trichy, Gopinath R. “Growth, Characterization and Magnetic Properties of Epitaxial FePt Nanostructures.” 2008. Web. 20 Nov 2019.

Vancouver:

Trichy GR. Growth, Characterization and Magnetic Properties of Epitaxial FePt Nanostructures. [Internet] [Thesis]. North Carolina State University; 2008. [cited 2019 Nov 20]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4383.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Trichy GR. Growth, Characterization and Magnetic Properties of Epitaxial FePt Nanostructures. [Thesis]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4383

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

150. Grenko, Judith Ann. Characterization of Homoepitaxially-Grown AlGaN/GaN Heterostructures.

Degree: PhD, Materials Science and Engineering, 2009, North Carolina State University

 GRENKO, JUDITH ANN. Characterization of Homoepitaxially-Grown AlGaN/GaN Heterostructures. (Under the direction of Dr. Mark A. L. Johnson). The work in this dissertation is aimed at… (more)

Subjects/Keywords: Hall measurements; Raman; HRXRD; CL; PL; AFM; epitaxy; Gallium Nitride

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Grenko, J. A. (2009). Characterization of Homoepitaxially-Grown AlGaN/GaN Heterostructures. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4096

Chicago Manual of Style (16th Edition):

Grenko, Judith Ann. “Characterization of Homoepitaxially-Grown AlGaN/GaN Heterostructures.” 2009. Doctoral Dissertation, North Carolina State University. Accessed November 20, 2019. http://www.lib.ncsu.edu/resolver/1840.16/4096.

MLA Handbook (7th Edition):

Grenko, Judith Ann. “Characterization of Homoepitaxially-Grown AlGaN/GaN Heterostructures.” 2009. Web. 20 Nov 2019.

Vancouver:

Grenko JA. Characterization of Homoepitaxially-Grown AlGaN/GaN Heterostructures. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2019 Nov 20]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4096.

Council of Science Editors:

Grenko JA. Characterization of Homoepitaxially-Grown AlGaN/GaN Heterostructures. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4096

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