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You searched for subject:(epitaxy). Showing records 1 – 15 of 15 total matches.

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1. LI PENG. MOCVD growth and characterization of wide band gap group III-nitride semiconductors.

Degree: 2003, National University of Singapore

Subjects/Keywords: MOCVD; GaN; InGaN; epitaxy; Photoluminescence; ELO

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

PENG, L. (2003). MOCVD growth and characterization of wide band gap group III-nitride semiconductors. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/13529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

PENG, LI. “MOCVD growth and characterization of wide band gap group III-nitride semiconductors.” 2003. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/13529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

PENG, LI. “MOCVD growth and characterization of wide band gap group III-nitride semiconductors.” 2003. Web. 12 Nov 2019.

Vancouver:

PENG L. MOCVD growth and characterization of wide band gap group III-nitride semiconductors. [Internet] [Thesis]. National University of Singapore; 2003. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/13529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

PENG L. MOCVD growth and characterization of wide band gap group III-nitride semiconductors. [Thesis]. National University of Singapore; 2003. Available from: http://scholarbank.nus.edu.sg/handle/10635/13529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

2. NG CHIEW HAI. Liquid phase epitaxial growth and fabrication of gallium phosphide green light emitting diodes.

Degree: 2004, National University of Singapore

Subjects/Keywords: LPE; LED; GaP; fabrication; epitaxy; green

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APA (6th Edition):

HAI, N. C. (2004). Liquid phase epitaxial growth and fabrication of gallium phosphide green light emitting diodes. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/14157

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

HAI, NG CHIEW. “Liquid phase epitaxial growth and fabrication of gallium phosphide green light emitting diodes.” 2004. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/14157.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

HAI, NG CHIEW. “Liquid phase epitaxial growth and fabrication of gallium phosphide green light emitting diodes.” 2004. Web. 12 Nov 2019.

Vancouver:

HAI NC. Liquid phase epitaxial growth and fabrication of gallium phosphide green light emitting diodes. [Internet] [Thesis]. National University of Singapore; 2004. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/14157.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

HAI NC. Liquid phase epitaxial growth and fabrication of gallium phosphide green light emitting diodes. [Thesis]. National University of Singapore; 2004. Available from: http://scholarbank.nus.edu.sg/handle/10635/14157

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

3. SHI JING. Theoretical study of elementary surface reactions in silicon epitaxial growth.

Degree: 2008, National University of Singapore

Subjects/Keywords: Hydrogen; Silicon; Adsorption; Disilane; DFT; Epitaxy

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APA (6th Edition):

JING, S. (2008). Theoretical study of elementary surface reactions in silicon epitaxial growth. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/13228

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

JING, SHI. “Theoretical study of elementary surface reactions in silicon epitaxial growth.” 2008. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/13228.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

JING, SHI. “Theoretical study of elementary surface reactions in silicon epitaxial growth.” 2008. Web. 12 Nov 2019.

Vancouver:

JING S. Theoretical study of elementary surface reactions in silicon epitaxial growth. [Internet] [Thesis]. National University of Singapore; 2008. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/13228.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

JING S. Theoretical study of elementary surface reactions in silicon epitaxial growth. [Thesis]. National University of Singapore; 2008. Available from: http://scholarbank.nus.edu.sg/handle/10635/13228

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. ZHANG YUHAI. EPITAXIAL GROWTH OF LANTHANIDE-DOPED UPCONVERSION CRYSTALS.

Degree: 2015, National University of Singapore

Subjects/Keywords: crystal growth; lanthanide-doped; upconversion; epitaxy; multicolor; barcode

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APA (6th Edition):

YUHAI, Z. (2015). EPITAXIAL GROWTH OF LANTHANIDE-DOPED UPCONVERSION CRYSTALS. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/121890

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

YUHAI, ZHANG. “EPITAXIAL GROWTH OF LANTHANIDE-DOPED UPCONVERSION CRYSTALS.” 2015. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/121890.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

YUHAI, ZHANG. “EPITAXIAL GROWTH OF LANTHANIDE-DOPED UPCONVERSION CRYSTALS.” 2015. Web. 12 Nov 2019.

Vancouver:

YUHAI Z. EPITAXIAL GROWTH OF LANTHANIDE-DOPED UPCONVERSION CRYSTALS. [Internet] [Thesis]. National University of Singapore; 2015. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/121890.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

YUHAI Z. EPITAXIAL GROWTH OF LANTHANIDE-DOPED UPCONVERSION CRYSTALS. [Thesis]. National University of Singapore; 2015. Available from: http://scholarbank.nus.edu.sg/handle/10635/121890

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

5. DENG JINYU. NANOSTRUCTURED L10 IRON-PLATINUM (FEPT) FILMS FOR ULTRA-HIGH DENSITY MAGNETIC RECORDING.

Degree: 2018, National University of Singapore

Subjects/Keywords: HAMR; FePt; microstructure; epitaxy; thin film; magnetism

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APA (6th Edition):

JINYU, D. (2018). NANOSTRUCTURED L10 IRON-PLATINUM (FEPT) FILMS FOR ULTRA-HIGH DENSITY MAGNETIC RECORDING. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/150322

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

JINYU, DENG. “NANOSTRUCTURED L10 IRON-PLATINUM (FEPT) FILMS FOR ULTRA-HIGH DENSITY MAGNETIC RECORDING.” 2018. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/150322.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

JINYU, DENG. “NANOSTRUCTURED L10 IRON-PLATINUM (FEPT) FILMS FOR ULTRA-HIGH DENSITY MAGNETIC RECORDING.” 2018. Web. 12 Nov 2019.

Vancouver:

JINYU D. NANOSTRUCTURED L10 IRON-PLATINUM (FEPT) FILMS FOR ULTRA-HIGH DENSITY MAGNETIC RECORDING. [Internet] [Thesis]. National University of Singapore; 2018. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/150322.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

JINYU D. NANOSTRUCTURED L10 IRON-PLATINUM (FEPT) FILMS FOR ULTRA-HIGH DENSITY MAGNETIC RECORDING. [Thesis]. National University of Singapore; 2018. Available from: http://scholarbank.nus.edu.sg/handle/10635/150322

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

6. CHOI KYU JIN. Selective EPI process for advanced CMOS devices.

Degree: 2008, National University of Singapore

Subjects/Keywords: SiGe; SiC; SiGeC; Epitaxy; Critical thickness; Substitutional carbon

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APA (6th Edition):

JIN, C. K. (2008). Selective EPI process for advanced CMOS devices. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/15977

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

JIN, CHOI KYU. “Selective EPI process for advanced CMOS devices.” 2008. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/15977.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

JIN, CHOI KYU. “Selective EPI process for advanced CMOS devices.” 2008. Web. 12 Nov 2019.

Vancouver:

JIN CK. Selective EPI process for advanced CMOS devices. [Internet] [Thesis]. National University of Singapore; 2008. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/15977.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

JIN CK. Selective EPI process for advanced CMOS devices. [Thesis]. National University of Singapore; 2008. Available from: http://scholarbank.nus.edu.sg/handle/10635/15977

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

7. CHEN WENQIAN. MBE growth and characterization of Ge1-xMnxTe ferromagnetic semiconductors.

Degree: 2009, National University of Singapore

Subjects/Keywords: Germanium Manganese Telluride; Magnetic Semiconductor; Ferromagetism; Molecular Beam Epitaxy

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APA (6th Edition):

WENQIAN, C. (2009). MBE growth and characterization of Ge1-xMnxTe ferromagnetic semiconductors. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/16637

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

WENQIAN, CHEN. “MBE growth and characterization of Ge1-xMnxTe ferromagnetic semiconductors.” 2009. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/16637.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

WENQIAN, CHEN. “MBE growth and characterization of Ge1-xMnxTe ferromagnetic semiconductors.” 2009. Web. 12 Nov 2019.

Vancouver:

WENQIAN C. MBE growth and characterization of Ge1-xMnxTe ferromagnetic semiconductors. [Internet] [Thesis]. National University of Singapore; 2009. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/16637.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

WENQIAN C. MBE growth and characterization of Ge1-xMnxTe ferromagnetic semiconductors. [Thesis]. National University of Singapore; 2009. Available from: http://scholarbank.nus.edu.sg/handle/10635/16637

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

8. TAMIE LOH AI JIA. FABRICATION OF 2-DIMENSIONAL MOLYBDENUM DISULFIDE (MOS2) AND TUNGSTEN DISULFIDE (WS2) BASED MATERIALS FOR FIELD EMISSION APPLICATIONS.

Degree: 2016, National University of Singapore

Subjects/Keywords: Pulsed laser deposition; conventional epitaxy; nanocones; metallic; 1T-WS2; carbon nanotubes

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APA (6th Edition):

JIA, T. L. A. (2016). FABRICATION OF 2-DIMENSIONAL MOLYBDENUM DISULFIDE (MOS2) AND TUNGSTEN DISULFIDE (WS2) BASED MATERIALS FOR FIELD EMISSION APPLICATIONS. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/129115

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

JIA, TAMIE LOH AI. “FABRICATION OF 2-DIMENSIONAL MOLYBDENUM DISULFIDE (MOS2) AND TUNGSTEN DISULFIDE (WS2) BASED MATERIALS FOR FIELD EMISSION APPLICATIONS.” 2016. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/129115.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

JIA, TAMIE LOH AI. “FABRICATION OF 2-DIMENSIONAL MOLYBDENUM DISULFIDE (MOS2) AND TUNGSTEN DISULFIDE (WS2) BASED MATERIALS FOR FIELD EMISSION APPLICATIONS.” 2016. Web. 12 Nov 2019.

Vancouver:

JIA TLA. FABRICATION OF 2-DIMENSIONAL MOLYBDENUM DISULFIDE (MOS2) AND TUNGSTEN DISULFIDE (WS2) BASED MATERIALS FOR FIELD EMISSION APPLICATIONS. [Internet] [Thesis]. National University of Singapore; 2016. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/129115.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

JIA TLA. FABRICATION OF 2-DIMENSIONAL MOLYBDENUM DISULFIDE (MOS2) AND TUNGSTEN DISULFIDE (WS2) BASED MATERIALS FOR FIELD EMISSION APPLICATIONS. [Thesis]. National University of Singapore; 2016. Available from: http://scholarbank.nus.edu.sg/handle/10635/129115

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

9. CAO YU. GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS.

Degree: 2003, National University of Singapore

Subjects/Keywords: gate oxide; dielectric breakdown; dielectric breakdown induced epitaxy (DBIE); simulation

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APA (6th Edition):

YU, C. (2003). GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS. (Thesis). National University of Singapore. Retrieved from https://scholarbank.nus.edu.sg/handle/10635/154026

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

YU, CAO. “GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS.” 2003. Thesis, National University of Singapore. Accessed November 12, 2019. https://scholarbank.nus.edu.sg/handle/10635/154026.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

YU, CAO. “GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS.” 2003. Web. 12 Nov 2019.

Vancouver:

YU C. GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS. [Internet] [Thesis]. National University of Singapore; 2003. [cited 2019 Nov 12]. Available from: https://scholarbank.nus.edu.sg/handle/10635/154026.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

YU C. GATE DIELECTRIC BREAKDOWN - 2D MODELING OF THE DBIE IMPACT ON THE DEVICE CHARACTERISTICS. [Thesis]. National University of Singapore; 2003. Available from: https://scholarbank.nus.edu.sg/handle/10635/154026

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

10. TAN CHUNG FOONG. Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy.

Degree: 2007, National University of Singapore

Subjects/Keywords: carbon; solid phase epitaxy (SPE); junction leakage; MOSFET; annealing; end of range (EOR)

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APA (6th Edition):

FOONG, T. C. (2007). Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/16160

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

FOONG, TAN CHUNG. “Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy.” 2007. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/16160.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

FOONG, TAN CHUNG. “Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy.” 2007. Web. 12 Nov 2019.

Vancouver:

FOONG TC. Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy. [Internet] [Thesis]. National University of Singapore; 2007. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/16160.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

FOONG TC. Carbon rich silicon (Si1-yCy)for defect engineering of ion implantation damage in devices activated by solid phase epitaxy. [Thesis]. National University of Singapore; 2007. Available from: http://scholarbank.nus.edu.sg/handle/10635/16160

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

11. TUNG KAR HOO PATRICK. Design and Fabrication of III-V Semiconductor Nanostructures by Molecular Beam Epitaxy.

Degree: 2014, National University of Singapore

Subjects/Keywords: molecular beam epitaxy; semiconductor; nanostructures; gallium compounds; III-V materials; photoluminescence

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APA (6th Edition):

PATRICK, T. K. H. (2014). Design and Fabrication of III-V Semiconductor Nanostructures by Molecular Beam Epitaxy. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/118275

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

PATRICK, TUNG KAR HOO. “Design and Fabrication of III-V Semiconductor Nanostructures by Molecular Beam Epitaxy.” 2014. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/118275.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

PATRICK, TUNG KAR HOO. “Design and Fabrication of III-V Semiconductor Nanostructures by Molecular Beam Epitaxy.” 2014. Web. 12 Nov 2019.

Vancouver:

PATRICK TKH. Design and Fabrication of III-V Semiconductor Nanostructures by Molecular Beam Epitaxy. [Internet] [Thesis]. National University of Singapore; 2014. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/118275.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

PATRICK TKH. Design and Fabrication of III-V Semiconductor Nanostructures by Molecular Beam Epitaxy. [Thesis]. National University of Singapore; 2014. Available from: http://scholarbank.nus.edu.sg/handle/10635/118275

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

12. ZHENG YUEBING. MBE growth of InAs quantum dots on cratered GaAs (001) substrate: An extended set of vicinal surfaces.

Degree: 2004, National University of Singapore

Subjects/Keywords: Atomic force microscopy; Reflection high-energy electron diffraction; Shallow spherically shaped crater; Molecular beam epitaxy; Quantum dot; III-V group

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APA (6th Edition):

YUEBING, Z. (2004). MBE growth of InAs quantum dots on cratered GaAs (001) substrate: An extended set of vicinal surfaces. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/13871

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

YUEBING, ZHENG. “MBE growth of InAs quantum dots on cratered GaAs (001) substrate: An extended set of vicinal surfaces.” 2004. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/13871.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

YUEBING, ZHENG. “MBE growth of InAs quantum dots on cratered GaAs (001) substrate: An extended set of vicinal surfaces.” 2004. Web. 12 Nov 2019.

Vancouver:

YUEBING Z. MBE growth of InAs quantum dots on cratered GaAs (001) substrate: An extended set of vicinal surfaces. [Internet] [Thesis]. National University of Singapore; 2004. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/13871.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

YUEBING Z. MBE growth of InAs quantum dots on cratered GaAs (001) substrate: An extended set of vicinal surfaces. [Thesis]. National University of Singapore; 2004. Available from: http://scholarbank.nus.edu.sg/handle/10635/13871

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

13. SENG HWEE LENG, DEBBIE. Characterization of silicon germanium systems using nuclear microscopy techniques.

Degree: 2005, National University of Singapore

Subjects/Keywords: silicon germanium; virtual substrates; gas source molecular beam epitaxy; strain relaxation; channeling contrast microscopy; beam rocking

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APA (6th Edition):

SENG HWEE LENG, D. (2005). Characterization of silicon germanium systems using nuclear microscopy techniques. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/14508

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

SENG HWEE LENG, DEBBIE. “Characterization of silicon germanium systems using nuclear microscopy techniques.” 2005. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/14508.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

SENG HWEE LENG, DEBBIE. “Characterization of silicon germanium systems using nuclear microscopy techniques.” 2005. Web. 12 Nov 2019.

Vancouver:

SENG HWEE LENG D. Characterization of silicon germanium systems using nuclear microscopy techniques. [Internet] [Thesis]. National University of Singapore; 2005. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/14508.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

SENG HWEE LENG D. Characterization of silicon germanium systems using nuclear microscopy techniques. [Thesis]. National University of Singapore; 2005. Available from: http://scholarbank.nus.edu.sg/handle/10635/14508

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

14. CHEN CHAO. Growth and characterization of electron trapping optical memory materials.

Degree: 2006, National University of Singapore

Subjects/Keywords: Electron-trapping optical memory; infrared-stimulated luminescence; photoluminescence; molecular beam epitaxy; doping; wide-bandgap semiconductor

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APA (6th Edition):

CHAO, C. (2006). Growth and characterization of electron trapping optical memory materials. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/15105

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

CHAO, CHEN. “Growth and characterization of electron trapping optical memory materials.” 2006. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/15105.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

CHAO, CHEN. “Growth and characterization of electron trapping optical memory materials.” 2006. Web. 12 Nov 2019.

Vancouver:

CHAO C. Growth and characterization of electron trapping optical memory materials. [Internet] [Thesis]. National University of Singapore; 2006. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/15105.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

CHAO C. Growth and characterization of electron trapping optical memory materials. [Thesis]. National University of Singapore; 2006. Available from: http://scholarbank.nus.edu.sg/handle/10635/15105

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. HAN CHENG. Interface controlled nanowire and two-dimensional thin film devices.

Degree: 2014, National University of Singapore

Subjects/Keywords: Graphene; ZnO nanowire; field effect transistors; surface transfer doping; in-situ characterization; molecular beam epitaxy

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

CHENG, H. (2014). Interface controlled nanowire and two-dimensional thin film devices. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/107369

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

CHENG, HAN. “Interface controlled nanowire and two-dimensional thin film devices.” 2014. Thesis, National University of Singapore. Accessed November 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/107369.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

CHENG, HAN. “Interface controlled nanowire and two-dimensional thin film devices.” 2014. Web. 12 Nov 2019.

Vancouver:

CHENG H. Interface controlled nanowire and two-dimensional thin film devices. [Internet] [Thesis]. National University of Singapore; 2014. [cited 2019 Nov 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/107369.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

CHENG H. Interface controlled nanowire and two-dimensional thin film devices. [Thesis]. National University of Singapore; 2014. Available from: http://scholarbank.nus.edu.sg/handle/10635/107369

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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