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You searched for subject:(epitaxial growth). Showing records 1 – 30 of 116 total matches.

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NSYSU

1. Huang, Yan-Cin. Study on epitaxial growth of Ni on polycrystalline Cu and brsss by electrodeposition.

Degree: Master, Materials and Optoelectronic Science, 2013, NSYSU

 This study investigates the effects of current density, grain orientation of polycrystalline substrate and lattice misfit on the growth behavior of Ni electrodeposited on Cu… (more)

Subjects/Keywords: epitaxial growth; EBSD; electrodeposition; orientation; Ni

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Huang, Y. (2013). Study on epitaxial growth of Ni on polycrystalline Cu and brsss by electrodeposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726113-164741

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Yan-Cin. “Study on epitaxial growth of Ni on polycrystalline Cu and brsss by electrodeposition.” 2013. Thesis, NSYSU. Accessed July 18, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726113-164741.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Yan-Cin. “Study on epitaxial growth of Ni on polycrystalline Cu and brsss by electrodeposition.” 2013. Web. 18 Jul 2019.

Vancouver:

Huang Y. Study on epitaxial growth of Ni on polycrystalline Cu and brsss by electrodeposition. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Jul 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726113-164741.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang Y. Study on epitaxial growth of Ni on polycrystalline Cu and brsss by electrodeposition. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726113-164741

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

2. Hou , Ying-chun. Effect of electrolytical parameters on epitaxial growth of Ni on polycrystalline Cu.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 This study aimed at clarifying the effects of electroplating parameters, such as the electrolyte and pH value, and substrate roughness on the epitaxial growth of… (more)

Subjects/Keywords: electrodeposition Ni; texture; epitaxial growth; EBSD; roughness

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APA (6th Edition):

Hou , Y. (2014). Effect of electrolytical parameters on epitaxial growth of Ni on polycrystalline Cu. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810114-114613

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hou , Ying-chun. “Effect of electrolytical parameters on epitaxial growth of Ni on polycrystalline Cu.” 2014. Thesis, NSYSU. Accessed July 18, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810114-114613.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hou , Ying-chun. “Effect of electrolytical parameters on epitaxial growth of Ni on polycrystalline Cu.” 2014. Web. 18 Jul 2019.

Vancouver:

Hou Y. Effect of electrolytical parameters on epitaxial growth of Ni on polycrystalline Cu. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Jul 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810114-114613.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hou Y. Effect of electrolytical parameters on epitaxial growth of Ni on polycrystalline Cu. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810114-114613

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brunel University

3. Issakov, Nikolai. Design a novel methodology for the goal-directed control of epitaxial graphene fabrication.

Degree: PhD, 2013, Brunel University

 The elusive 2D carbon poly-type was argued more than 70 years ago. Meanwhile, the recent discovery of graphene has proved that such materials can indeed… (more)

Subjects/Keywords: 621.3; Carbide dervied carbon; Epitaxial growth

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APA (6th Edition):

Issakov, N. (2013). Design a novel methodology for the goal-directed control of epitaxial graphene fabrication. (Doctoral Dissertation). Brunel University. Retrieved from http://bura.brunel.ac.uk/handle/2438/8756 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607524

Chicago Manual of Style (16th Edition):

Issakov, Nikolai. “Design a novel methodology for the goal-directed control of epitaxial graphene fabrication.” 2013. Doctoral Dissertation, Brunel University. Accessed July 18, 2019. http://bura.brunel.ac.uk/handle/2438/8756 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607524.

MLA Handbook (7th Edition):

Issakov, Nikolai. “Design a novel methodology for the goal-directed control of epitaxial graphene fabrication.” 2013. Web. 18 Jul 2019.

Vancouver:

Issakov N. Design a novel methodology for the goal-directed control of epitaxial graphene fabrication. [Internet] [Doctoral dissertation]. Brunel University; 2013. [cited 2019 Jul 18]. Available from: http://bura.brunel.ac.uk/handle/2438/8756 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607524.

Council of Science Editors:

Issakov N. Design a novel methodology for the goal-directed control of epitaxial graphene fabrication. [Doctoral Dissertation]. Brunel University; 2013. Available from: http://bura.brunel.ac.uk/handle/2438/8756 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607524


University of Illinois – Chicago

4. Callagon, Erika Blanca R. High-Resolution Studies of Cadmium Uptake on Carbonate Surfaces: Mechanisms, Rates, and Structures.

Degree: 2016, University of Illinois – Chicago

 The research described in this dissertation provided systematic answers to questions about how and to what extent the toxic heavy metal cadmium is removed from… (more)

Subjects/Keywords: Epitaxial growth; mineral surface; cadmium; carbonate

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APA (6th Edition):

Callagon, E. B. R. (2016). High-Resolution Studies of Cadmium Uptake on Carbonate Surfaces: Mechanisms, Rates, and Structures. (Thesis). University of Illinois – Chicago. Retrieved from http://hdl.handle.net/10027/21301

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Callagon, Erika Blanca R. “High-Resolution Studies of Cadmium Uptake on Carbonate Surfaces: Mechanisms, Rates, and Structures.” 2016. Thesis, University of Illinois – Chicago. Accessed July 18, 2019. http://hdl.handle.net/10027/21301.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Callagon, Erika Blanca R. “High-Resolution Studies of Cadmium Uptake on Carbonate Surfaces: Mechanisms, Rates, and Structures.” 2016. Web. 18 Jul 2019.

Vancouver:

Callagon EBR. High-Resolution Studies of Cadmium Uptake on Carbonate Surfaces: Mechanisms, Rates, and Structures. [Internet] [Thesis]. University of Illinois – Chicago; 2016. [cited 2019 Jul 18]. Available from: http://hdl.handle.net/10027/21301.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Callagon EBR. High-Resolution Studies of Cadmium Uptake on Carbonate Surfaces: Mechanisms, Rates, and Structures. [Thesis]. University of Illinois – Chicago; 2016. Available from: http://hdl.handle.net/10027/21301

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Univerzitet u Beogradu

5. Jović, Vesna B., 1955-. Epitaksijalni rast iz tečne faze uskozonalnih poluporovodnika pogodnih za izradu detektora infracrvenog zračenja.

Degree: Tehnološko-metalurški fakultet, 2015, Univerzitet u Beogradu

Rаst kristаlа - еpitаksiјаlni rаst pоluprоvоdničkih slојеvа / Crystal growth - epitaxial growth of semiconductor layers Advisors/Committee Members: Valčić, Andreja.

Subjects/Keywords: liquid phase epitaxial growth; InSb epitaxial layer; Hg1-xCdxTe epitaxial layer; photovoltaic IR detector; semi-closed two-zone system for epitaxial growh; horizontal sliding system for epitaxial growth; phase equilibrium; interdiffusion in epi layer/substrate boundary; diffusion in solution for epitaxial growth; compositional grading in epitaxial layer

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APA (6th Edition):

Jović, Vesna B., 1. (2015). Epitaksijalni rast iz tečne faze uskozonalnih poluporovodnika pogodnih za izradu detektora infracrvenog zračenja. (Thesis). Univerzitet u Beogradu. Retrieved from https://fedorabg.bg.ac.rs/fedora/get/o:7596/bdef:Content/get

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jović, Vesna B., 1955-. “Epitaksijalni rast iz tečne faze uskozonalnih poluporovodnika pogodnih za izradu detektora infracrvenog zračenja.” 2015. Thesis, Univerzitet u Beogradu. Accessed July 18, 2019. https://fedorabg.bg.ac.rs/fedora/get/o:7596/bdef:Content/get.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jović, Vesna B., 1955-. “Epitaksijalni rast iz tečne faze uskozonalnih poluporovodnika pogodnih za izradu detektora infracrvenog zračenja.” 2015. Web. 18 Jul 2019.

Vancouver:

Jović, Vesna B. 1. Epitaksijalni rast iz tečne faze uskozonalnih poluporovodnika pogodnih za izradu detektora infracrvenog zračenja. [Internet] [Thesis]. Univerzitet u Beogradu; 2015. [cited 2019 Jul 18]. Available from: https://fedorabg.bg.ac.rs/fedora/get/o:7596/bdef:Content/get.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jović, Vesna B. 1. Epitaksijalni rast iz tečne faze uskozonalnih poluporovodnika pogodnih za izradu detektora infracrvenog zračenja. [Thesis]. Univerzitet u Beogradu; 2015. Available from: https://fedorabg.bg.ac.rs/fedora/get/o:7596/bdef:Content/get

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Anna University

6. Balaji M. Epitaxial growth and characterization of aluminum nitride and effects of ion irradiation on aluminum gallium nitride gallium nitride heterostructures.

Degree: Crystal growth, 2013, Anna University

Aluminum nitride (AlN), Gallium nitride (GaN) and its ternary alloy Aluminum Gallium Nitride (AlGaN) are the potential materials for ultraviolet emitters and detectors due to… (more)

Subjects/Keywords: Aluminum Nitride; Crystal growth; Epitaxial Growth; Gallium Nitride Heterostructures; Ion Irradiation

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APA (6th Edition):

M, B. (2013). Epitaxial growth and characterization of aluminum nitride and effects of ion irradiation on aluminum gallium nitride gallium nitride heterostructures. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/17748

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

M, Balaji. “Epitaxial growth and characterization of aluminum nitride and effects of ion irradiation on aluminum gallium nitride gallium nitride heterostructures.” 2013. Thesis, Anna University. Accessed July 18, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/17748.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

M, Balaji. “Epitaxial growth and characterization of aluminum nitride and effects of ion irradiation on aluminum gallium nitride gallium nitride heterostructures.” 2013. Web. 18 Jul 2019.

Vancouver:

M B. Epitaxial growth and characterization of aluminum nitride and effects of ion irradiation on aluminum gallium nitride gallium nitride heterostructures. [Internet] [Thesis]. Anna University; 2013. [cited 2019 Jul 18]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/17748.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

M B. Epitaxial growth and characterization of aluminum nitride and effects of ion irradiation on aluminum gallium nitride gallium nitride heterostructures. [Thesis]. Anna University; 2013. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/17748

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Mississippi State University

7. Krishnan, Bharat. NOVEL TECHNIQUES FOR SELECTIVE DOPING OF SILICON CARBIDE FOR DEVICE APPLICATIONS.

Degree: PhD, Electrical and Computer Engineering, 2009, Mississippi State University

  Superior properties of Silicon Carbide (SiC), such as wide bandgap, high breakdown field and high thermal conductivity, have made it the frontrunner to replace… (more)

Subjects/Keywords: PiN diodes; selective epitaxial growth; hydrogen; luminescence; passivation; defect reactions; halo-carbon; low-temperature epitaxial growth

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APA (6th Edition):

Krishnan, B. (2009). NOVEL TECHNIQUES FOR SELECTIVE DOPING OF SILICON CARBIDE FOR DEVICE APPLICATIONS. (Doctoral Dissertation). Mississippi State University. Retrieved from http://sun.library.msstate.edu/ETD-db/theses/available/etd-11042009-112518/ ;

Chicago Manual of Style (16th Edition):

Krishnan, Bharat. “NOVEL TECHNIQUES FOR SELECTIVE DOPING OF SILICON CARBIDE FOR DEVICE APPLICATIONS.” 2009. Doctoral Dissertation, Mississippi State University. Accessed July 18, 2019. http://sun.library.msstate.edu/ETD-db/theses/available/etd-11042009-112518/ ;.

MLA Handbook (7th Edition):

Krishnan, Bharat. “NOVEL TECHNIQUES FOR SELECTIVE DOPING OF SILICON CARBIDE FOR DEVICE APPLICATIONS.” 2009. Web. 18 Jul 2019.

Vancouver:

Krishnan B. NOVEL TECHNIQUES FOR SELECTIVE DOPING OF SILICON CARBIDE FOR DEVICE APPLICATIONS. [Internet] [Doctoral dissertation]. Mississippi State University; 2009. [cited 2019 Jul 18]. Available from: http://sun.library.msstate.edu/ETD-db/theses/available/etd-11042009-112518/ ;.

Council of Science Editors:

Krishnan B. NOVEL TECHNIQUES FOR SELECTIVE DOPING OF SILICON CARBIDE FOR DEVICE APPLICATIONS. [Doctoral Dissertation]. Mississippi State University; 2009. Available from: http://sun.library.msstate.edu/ETD-db/theses/available/etd-11042009-112518/ ;


NSYSU

8. Yeh, Hsiu-Hung. Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 Attempts of growing cuprous oxide (Cu2O) epitaxial film on Cu substrate by molecular beam epitaxy were made in this work. The main purpose is to… (more)

Subjects/Keywords: epitaxial growth; Cu2O; Cu substrate; electron backscatter diffraction; molecular beam epitaxy

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APA (6th Edition):

Yeh, H. (2017). Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729117-195028

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yeh, Hsiu-Hung. “Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy.” 2017. Thesis, NSYSU. Accessed July 18, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729117-195028.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yeh, Hsiu-Hung. “Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy.” 2017. Web. 18 Jul 2019.

Vancouver:

Yeh H. Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Jul 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729117-195028.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yeh H. Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729117-195028

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

9. Liu, Ying-chen. Study on epitaxial growth of Ni on polycrystalline Cu by electrodeposition.

Degree: Master, Materials and Optoelectronic Science, 2011, NSYSU

 The present study aims at clarifying the effects of processing parameters and substrate orientation on the epitaxial growth of Ni on polycrystalline Cu by electrodeposition… (more)

Subjects/Keywords: epitaxial growth; transmission electron microscopy; orientation; electrodeposition; EBSD

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APA (6th Edition):

Liu, Y. (2011). Study on epitaxial growth of Ni on polycrystalline Cu by electrodeposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0906111-121106

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Ying-chen. “Study on epitaxial growth of Ni on polycrystalline Cu by electrodeposition.” 2011. Thesis, NSYSU. Accessed July 18, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0906111-121106.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Ying-chen. “Study on epitaxial growth of Ni on polycrystalline Cu by electrodeposition.” 2011. Web. 18 Jul 2019.

Vancouver:

Liu Y. Study on epitaxial growth of Ni on polycrystalline Cu by electrodeposition. [Internet] [Thesis]. NSYSU; 2011. [cited 2019 Jul 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0906111-121106.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu Y. Study on epitaxial growth of Ni on polycrystalline Cu by electrodeposition. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0906111-121106

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

10. Sprinkle, Michael W. Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication.

Degree: PhD, Physics, 2010, Georgia Tech

 In the past several years, epitaxial graphene on silicon carbide has been transformed from an academic curiosity of social scientists to a leading candidate material… (more)

Subjects/Keywords: Rotational stacking; Growth; Epitaxial; Ellipsometry; Graphene; Silicon carbide; Graphene; Epitaxy

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APA (6th Edition):

Sprinkle, M. W. (2010). Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/34735

Chicago Manual of Style (16th Edition):

Sprinkle, Michael W. “Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication.” 2010. Doctoral Dissertation, Georgia Tech. Accessed July 18, 2019. http://hdl.handle.net/1853/34735.

MLA Handbook (7th Edition):

Sprinkle, Michael W. “Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication.” 2010. Web. 18 Jul 2019.

Vancouver:

Sprinkle MW. Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication. [Internet] [Doctoral dissertation]. Georgia Tech; 2010. [cited 2019 Jul 18]. Available from: http://hdl.handle.net/1853/34735.

Council of Science Editors:

Sprinkle MW. Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication. [Doctoral Dissertation]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/34735


Carnegie Mellon University

11. Yao, Yao. Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers.

Degree: 2017, Carnegie Mellon University

 Gallium Oxide (Ga2O3) has emerged over the last decade as a new up-and-coming alternative to traditional wide bandgap semiconductors. It exists as five polymorphs (α-,… (more)

Subjects/Keywords: epitaxial growth; gallium oxide; ohmic contact; schottky contact; semiconductor; wide bandgap

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APA (6th Edition):

Yao, Y. (2017). Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers. (Thesis). Carnegie Mellon University. Retrieved from http://repository.cmu.edu/dissertations/921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yao, Yao. “Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers.” 2017. Thesis, Carnegie Mellon University. Accessed July 18, 2019. http://repository.cmu.edu/dissertations/921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yao, Yao. “Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers.” 2017. Web. 18 Jul 2019.

Vancouver:

Yao Y. Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers. [Internet] [Thesis]. Carnegie Mellon University; 2017. [cited 2019 Jul 18]. Available from: http://repository.cmu.edu/dissertations/921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yao Y. Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers. [Thesis]. Carnegie Mellon University; 2017. Available from: http://repository.cmu.edu/dissertations/921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

12. Castiella, Marion. Elaboration et caractérisation de nanostructures de FeRh structure, ordre chimique et transition magnétique : Elaboration and characterization of FeRh nanostructures : structure, chemical order and magnetic transition.

Degree: Docteur es, Physique de la matière, 2015, Université Toulouse III – Paul Sabatier

Avec les besoins croissants en enregistrement magnétique à haute densité, un effort important a été apporté à la fabrication et au contrôle des nanoalliages magnétiques.… (more)

Subjects/Keywords: Nanoalliages; Croissance épitaxiale; Structure; Magnétisme; Nanoalloys; Epitaxial growth; Structure; Magnetism

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APA (6th Edition):

Castiella, M. (2015). Elaboration et caractérisation de nanostructures de FeRh structure, ordre chimique et transition magnétique : Elaboration and characterization of FeRh nanostructures : structure, chemical order and magnetic transition. (Doctoral Dissertation). Université Toulouse III – Paul Sabatier. Retrieved from http://www.theses.fr/2015TOU30293

Chicago Manual of Style (16th Edition):

Castiella, Marion. “Elaboration et caractérisation de nanostructures de FeRh structure, ordre chimique et transition magnétique : Elaboration and characterization of FeRh nanostructures : structure, chemical order and magnetic transition.” 2015. Doctoral Dissertation, Université Toulouse III – Paul Sabatier. Accessed July 18, 2019. http://www.theses.fr/2015TOU30293.

MLA Handbook (7th Edition):

Castiella, Marion. “Elaboration et caractérisation de nanostructures de FeRh structure, ordre chimique et transition magnétique : Elaboration and characterization of FeRh nanostructures : structure, chemical order and magnetic transition.” 2015. Web. 18 Jul 2019.

Vancouver:

Castiella M. Elaboration et caractérisation de nanostructures de FeRh structure, ordre chimique et transition magnétique : Elaboration and characterization of FeRh nanostructures : structure, chemical order and magnetic transition. [Internet] [Doctoral dissertation]. Université Toulouse III – Paul Sabatier; 2015. [cited 2019 Jul 18]. Available from: http://www.theses.fr/2015TOU30293.

Council of Science Editors:

Castiella M. Elaboration et caractérisation de nanostructures de FeRh structure, ordre chimique et transition magnétique : Elaboration and characterization of FeRh nanostructures : structure, chemical order and magnetic transition. [Doctoral Dissertation]. Université Toulouse III – Paul Sabatier; 2015. Available from: http://www.theses.fr/2015TOU30293


University of Texas – Austin

13. Lin, Edward Lawrence. Atomic layer deposition of epitaxial perovskites for electronic and photonic applications.

Degree: Chemical Engineering, 2018, University of Texas – Austin

 This research focuses on growth of ferroelectric and conductive perovskite oxides for both electronic and photonic applications. The advancement of computing technologies requires new device… (more)

Subjects/Keywords: Perovskites; Atomic layer deposition; Thin films; Epitaxial growth

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APA (6th Edition):

Lin, E. L. (2018). Atomic layer deposition of epitaxial perovskites for electronic and photonic applications. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/69181

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Edward Lawrence. “Atomic layer deposition of epitaxial perovskites for electronic and photonic applications.” 2018. Thesis, University of Texas – Austin. Accessed July 18, 2019. http://hdl.handle.net/2152/69181.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Edward Lawrence. “Atomic layer deposition of epitaxial perovskites for electronic and photonic applications.” 2018. Web. 18 Jul 2019.

Vancouver:

Lin EL. Atomic layer deposition of epitaxial perovskites for electronic and photonic applications. [Internet] [Thesis]. University of Texas – Austin; 2018. [cited 2019 Jul 18]. Available from: http://hdl.handle.net/2152/69181.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin EL. Atomic layer deposition of epitaxial perovskites for electronic and photonic applications. [Thesis]. University of Texas – Austin; 2018. Available from: http://hdl.handle.net/2152/69181

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

14. Ameruddin, Amira. Growth and Characterisation of Gold-seeded Indium Gallium Arsenide Nanowires for Optoelectronic Applications .

Degree: 2015, Australian National University

 III-V semiconductor nanowires have been shown as promising candidates to serve as building blocks in electronic and optoelectronic devices such as transistors, lasers, light emitting… (more)

Subjects/Keywords: Indium Gallium Arsenide; Metal organic Phase epitaxy; Epitaxial growth; nanowires; semiconductor

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APA (6th Edition):

Ameruddin, A. (2015). Growth and Characterisation of Gold-seeded Indium Gallium Arsenide Nanowires for Optoelectronic Applications . (Thesis). Australian National University. Retrieved from http://hdl.handle.net/1885/101762

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ameruddin, Amira. “Growth and Characterisation of Gold-seeded Indium Gallium Arsenide Nanowires for Optoelectronic Applications .” 2015. Thesis, Australian National University. Accessed July 18, 2019. http://hdl.handle.net/1885/101762.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ameruddin, Amira. “Growth and Characterisation of Gold-seeded Indium Gallium Arsenide Nanowires for Optoelectronic Applications .” 2015. Web. 18 Jul 2019.

Vancouver:

Ameruddin A. Growth and Characterisation of Gold-seeded Indium Gallium Arsenide Nanowires for Optoelectronic Applications . [Internet] [Thesis]. Australian National University; 2015. [cited 2019 Jul 18]. Available from: http://hdl.handle.net/1885/101762.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ameruddin A. Growth and Characterisation of Gold-seeded Indium Gallium Arsenide Nanowires for Optoelectronic Applications . [Thesis]. Australian National University; 2015. Available from: http://hdl.handle.net/1885/101762

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

15. Huang, Pei-Yu. Effects of electrolytical parameters and substrate on epitaxial growth of Cu2O on electrodeposition.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 Cuprous oxide (Cu2O) films were prepared by galvanostatic condition to explore the effect of processing parameters (temperature and pH value of the electroyte and current… (more)

Subjects/Keywords: copper substrate; electrodeposition; cuprous oxide; electron back scatter diffraction; silver substrate; epitaxial growth

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APA (6th Edition):

Huang, P. (2017). Effects of electrolytical parameters and substrate on epitaxial growth of Cu2O on electrodeposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803117-214022

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Pei-Yu. “Effects of electrolytical parameters and substrate on epitaxial growth of Cu2O on electrodeposition.” 2017. Thesis, NSYSU. Accessed July 18, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803117-214022.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Pei-Yu. “Effects of electrolytical parameters and substrate on epitaxial growth of Cu2O on electrodeposition.” 2017. Web. 18 Jul 2019.

Vancouver:

Huang P. Effects of electrolytical parameters and substrate on epitaxial growth of Cu2O on electrodeposition. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Jul 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803117-214022.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang P. Effects of electrolytical parameters and substrate on epitaxial growth of Cu2O on electrodeposition. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803117-214022

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


KTH

16. Hu, Chen. Surface Optimization of the Silicon Templates for Monolithic Photonics Integration.

Degree: Information and Communication Technology (ICT), 2011, KTH

  Silicon photonics is emerging as a potential field to achieve optical interconnects towards the realization of ultra high bandwidth. The indirect band-gap property of… (more)

Subjects/Keywords: Chemical mechanical polishing; epitaxial lateral growth; surface optimization; roughness; surface morphology; step height; surface topography.

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APA (6th Edition):

Hu, C. (2011). Surface Optimization of the Silicon Templates for Monolithic Photonics Integration. (Thesis). KTH. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-37226

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hu, Chen. “Surface Optimization of the Silicon Templates for Monolithic Photonics Integration.” 2011. Thesis, KTH. Accessed July 18, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-37226.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hu, Chen. “Surface Optimization of the Silicon Templates for Monolithic Photonics Integration.” 2011. Web. 18 Jul 2019.

Vancouver:

Hu C. Surface Optimization of the Silicon Templates for Monolithic Photonics Integration. [Internet] [Thesis]. KTH; 2011. [cited 2019 Jul 18]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-37226.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hu C. Surface Optimization of the Silicon Templates for Monolithic Photonics Integration. [Thesis]. KTH; 2011. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-37226

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


McMaster University

17. Shen, Huaxiang. Substrates Manipulation and Epitaxial Growth of Gallium Nitride Thin Films.

Degree: PhD, 2014, McMaster University

Light emitting diode (LED)-based solid state displays (SSD) have attracted growing interest due to their advantages in terms of contrast ratio, brightness, viewing angle,… (more)

Subjects/Keywords: GaN Thin Films; SiC; Alignment; Epitaxial Growth; Semiconductor and Optical Materials; Semiconductor and Optical Materials

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APA (6th Edition):

Shen, H. (2014). Substrates Manipulation and Epitaxial Growth of Gallium Nitride Thin Films. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/14037

Chicago Manual of Style (16th Edition):

Shen, Huaxiang. “Substrates Manipulation and Epitaxial Growth of Gallium Nitride Thin Films.” 2014. Doctoral Dissertation, McMaster University. Accessed July 18, 2019. http://hdl.handle.net/11375/14037.

MLA Handbook (7th Edition):

Shen, Huaxiang. “Substrates Manipulation and Epitaxial Growth of Gallium Nitride Thin Films.” 2014. Web. 18 Jul 2019.

Vancouver:

Shen H. Substrates Manipulation and Epitaxial Growth of Gallium Nitride Thin Films. [Internet] [Doctoral dissertation]. McMaster University; 2014. [cited 2019 Jul 18]. Available from: http://hdl.handle.net/11375/14037.

Council of Science Editors:

Shen H. Substrates Manipulation and Epitaxial Growth of Gallium Nitride Thin Films. [Doctoral Dissertation]. McMaster University; 2014. Available from: http://hdl.handle.net/11375/14037


University of Surrey

18. Cristiano, Filadelfo. Extended defects in SiGe device structures formed by ion implantation.

Degree: PhD, 1998, University of Surrey

 The use of SiGe/Si heterostructures in the fabrication of electronic devices results in an improvement of the device performances with respect to bulk silicon. Ion… (more)

Subjects/Keywords: 530.41; Heterostructures; Solid Phase Epitaxial Growth

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APA (6th Edition):

Cristiano, F. (1998). Extended defects in SiGe device structures formed by ion implantation. (Doctoral Dissertation). University of Surrey. Retrieved from http://epubs.surrey.ac.uk/843871/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.246033

Chicago Manual of Style (16th Edition):

Cristiano, Filadelfo. “Extended defects in SiGe device structures formed by ion implantation.” 1998. Doctoral Dissertation, University of Surrey. Accessed July 18, 2019. http://epubs.surrey.ac.uk/843871/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.246033.

MLA Handbook (7th Edition):

Cristiano, Filadelfo. “Extended defects in SiGe device structures formed by ion implantation.” 1998. Web. 18 Jul 2019.

Vancouver:

Cristiano F. Extended defects in SiGe device structures formed by ion implantation. [Internet] [Doctoral dissertation]. University of Surrey; 1998. [cited 2019 Jul 18]. Available from: http://epubs.surrey.ac.uk/843871/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.246033.

Council of Science Editors:

Cristiano F. Extended defects in SiGe device structures formed by ion implantation. [Doctoral Dissertation]. University of Surrey; 1998. Available from: http://epubs.surrey.ac.uk/843871/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.246033


University of Texas – Austin

19. -2257-1969. Exploring novel properties of atomically smooth metal films as an ideal platform for nano photonics.

Degree: Physics, 2016, University of Texas – Austin

 Plasmonics is the science of manipulating light at the metal and dielectric interface. Therefore, a high-quality metal film plays a critical role in this exciting… (more)

Subjects/Keywords: Epitaxial growth; Single-crystalline silver and aluminum; Intrinsic optical constants; Ellipsometry; Plasmonics; Nano photonics

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APA (6th Edition):

-2257-1969. (2016). Exploring novel properties of atomically smooth metal films as an ideal platform for nano photonics. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/47133

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

-2257-1969. “Exploring novel properties of atomically smooth metal films as an ideal platform for nano photonics.” 2016. Thesis, University of Texas – Austin. Accessed July 18, 2019. http://hdl.handle.net/2152/47133.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

-2257-1969. “Exploring novel properties of atomically smooth metal films as an ideal platform for nano photonics.” 2016. Web. 18 Jul 2019.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-2257-1969. Exploring novel properties of atomically smooth metal films as an ideal platform for nano photonics. [Internet] [Thesis]. University of Texas – Austin; 2016. [cited 2019 Jul 18]. Available from: http://hdl.handle.net/2152/47133.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

-2257-1969. Exploring novel properties of atomically smooth metal films as an ideal platform for nano photonics. [Thesis]. University of Texas – Austin; 2016. Available from: http://hdl.handle.net/2152/47133

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

20. Mahbub, Ahmed Rayhan. Magnetic Studies of Multiferroic Heterostructures.

Degree: MSin Materials Science, Physics, Astronomy, and Materials Science, 2018, Missouri State University

  Multiferroic heterostructures (MHS) consisting of at least two materials with ferroic properties have been a major focus for researchers recently due to its immense… (more)

Subjects/Keywords: ferromagnetism; heterostructures; epitaxial growth; field-dependent magnetic characterization; coercivity; Materials Science and Engineering

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APA (6th Edition):

Mahbub, A. R. (2018). Magnetic Studies of Multiferroic Heterostructures. (Masters Thesis). Missouri State University. Retrieved from https://bearworks.missouristate.edu/theses/3287

Chicago Manual of Style (16th Edition):

Mahbub, Ahmed Rayhan. “Magnetic Studies of Multiferroic Heterostructures.” 2018. Masters Thesis, Missouri State University. Accessed July 18, 2019. https://bearworks.missouristate.edu/theses/3287.

MLA Handbook (7th Edition):

Mahbub, Ahmed Rayhan. “Magnetic Studies of Multiferroic Heterostructures.” 2018. Web. 18 Jul 2019.

Vancouver:

Mahbub AR. Magnetic Studies of Multiferroic Heterostructures. [Internet] [Masters thesis]. Missouri State University; 2018. [cited 2019 Jul 18]. Available from: https://bearworks.missouristate.edu/theses/3287.

Council of Science Editors:

Mahbub AR. Magnetic Studies of Multiferroic Heterostructures. [Masters Thesis]. Missouri State University; 2018. Available from: https://bearworks.missouristate.edu/theses/3287


University of South Carolina

21. Shetu, Shamaita Shithi. Influence of Defects in Epitaxial Graphene Towards Material Growth and Device Performances.

Degree: PhD, Electrical Engineering, 2014, University of South Carolina

  Since its invention in 2004, Graphene, a two dimensional array of SP2 bonded carbon atoms has received significant interest by the scientific community due… (more)

Subjects/Keywords: Electrical and Computer Engineering; Engineering; defects; epitaxial graphene; material growth; device performances

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APA (6th Edition):

Shetu, S. S. (2014). Influence of Defects in Epitaxial Graphene Towards Material Growth and Device Performances. (Doctoral Dissertation). University of South Carolina. Retrieved from https://scholarcommons.sc.edu/etd/2946

Chicago Manual of Style (16th Edition):

Shetu, Shamaita Shithi. “Influence of Defects in Epitaxial Graphene Towards Material Growth and Device Performances.” 2014. Doctoral Dissertation, University of South Carolina. Accessed July 18, 2019. https://scholarcommons.sc.edu/etd/2946.

MLA Handbook (7th Edition):

Shetu, Shamaita Shithi. “Influence of Defects in Epitaxial Graphene Towards Material Growth and Device Performances.” 2014. Web. 18 Jul 2019.

Vancouver:

Shetu SS. Influence of Defects in Epitaxial Graphene Towards Material Growth and Device Performances. [Internet] [Doctoral dissertation]. University of South Carolina; 2014. [cited 2019 Jul 18]. Available from: https://scholarcommons.sc.edu/etd/2946.

Council of Science Editors:

Shetu SS. Influence of Defects in Epitaxial Graphene Towards Material Growth and Device Performances. [Doctoral Dissertation]. University of South Carolina; 2014. Available from: https://scholarcommons.sc.edu/etd/2946


Université Paris-Sud – Paris XI

22. Debiossac, Maxime. Diffraction d’atomes rapides sur surfaces : des résonances de piégeage à la dynamique de croissance par épitaxie : fast atom diffraction on surfaces : from bound states resonances to the dynamics of epitaxial growth.

Degree: Docteur es, Physique, 2014, Université Paris-Sud – Paris XI

Ce travail est consacré à l’étude de la diffraction d’atomes rapides (d’énergie cinétiquede l’ordre du keV) en incidence rasante (angles d’incidence ~ 1°) le long… (more)

Subjects/Keywords: Diffraction atomique; Croissance par épitaxie; Graphène; Incidence rasante; Atomic diffraction; Epitaxial growth; Graphene; Grazing incidence

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APA (6th Edition):

Debiossac, M. (2014). Diffraction d’atomes rapides sur surfaces : des résonances de piégeage à la dynamique de croissance par épitaxie : fast atom diffraction on surfaces : from bound states resonances to the dynamics of epitaxial growth. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2014PA112384

Chicago Manual of Style (16th Edition):

Debiossac, Maxime. “Diffraction d’atomes rapides sur surfaces : des résonances de piégeage à la dynamique de croissance par épitaxie : fast atom diffraction on surfaces : from bound states resonances to the dynamics of epitaxial growth.” 2014. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed July 18, 2019. http://www.theses.fr/2014PA112384.

MLA Handbook (7th Edition):

Debiossac, Maxime. “Diffraction d’atomes rapides sur surfaces : des résonances de piégeage à la dynamique de croissance par épitaxie : fast atom diffraction on surfaces : from bound states resonances to the dynamics of epitaxial growth.” 2014. Web. 18 Jul 2019.

Vancouver:

Debiossac M. Diffraction d’atomes rapides sur surfaces : des résonances de piégeage à la dynamique de croissance par épitaxie : fast atom diffraction on surfaces : from bound states resonances to the dynamics of epitaxial growth. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2014. [cited 2019 Jul 18]. Available from: http://www.theses.fr/2014PA112384.

Council of Science Editors:

Debiossac M. Diffraction d’atomes rapides sur surfaces : des résonances de piégeage à la dynamique de croissance par épitaxie : fast atom diffraction on surfaces : from bound states resonances to the dynamics of epitaxial growth. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2014. Available from: http://www.theses.fr/2014PA112384


University of New Orleans

23. Wang, Kai. II-VI Core-Shell Nanowires: Synthesis, Characterizations and Photovoltaic Applications.

Degree: PhD, Physics, 2012, University of New Orleans

  The emergence of semiconducting nanowires as the new building blocks for photovoltaic (PV) devices has drawn considerable attention because of the great potential of… (more)

Subjects/Keywords: Solar Cells, Nanowires, Type-II heterojunction, Epitaxial growth, Three-dimensional; Condensed Matter Physics

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APA (6th Edition):

Wang, K. (2012). II-VI Core-Shell Nanowires: Synthesis, Characterizations and Photovoltaic Applications. (Doctoral Dissertation). University of New Orleans. Retrieved from https://scholarworks.uno.edu/td/1533

Chicago Manual of Style (16th Edition):

Wang, Kai. “II-VI Core-Shell Nanowires: Synthesis, Characterizations and Photovoltaic Applications.” 2012. Doctoral Dissertation, University of New Orleans. Accessed July 18, 2019. https://scholarworks.uno.edu/td/1533.

MLA Handbook (7th Edition):

Wang, Kai. “II-VI Core-Shell Nanowires: Synthesis, Characterizations and Photovoltaic Applications.” 2012. Web. 18 Jul 2019.

Vancouver:

Wang K. II-VI Core-Shell Nanowires: Synthesis, Characterizations and Photovoltaic Applications. [Internet] [Doctoral dissertation]. University of New Orleans; 2012. [cited 2019 Jul 18]. Available from: https://scholarworks.uno.edu/td/1533.

Council of Science Editors:

Wang K. II-VI Core-Shell Nanowires: Synthesis, Characterizations and Photovoltaic Applications. [Doctoral Dissertation]. University of New Orleans; 2012. Available from: https://scholarworks.uno.edu/td/1533


Mississippi State University

24. Das, Hrishikesh. CHARACTERIZATION OF DEFECTS AND EVALUATION OF MATERIAL QUALITY OF LOW TEMPERATURE EPITAXIAL GROWTH.

Degree: PhD, Electrical and Computer Engineering, 2010, Mississippi State University

  A novel process for low-temperature (LT) epitaxial growth of silicon carbide (SiC) by replacing the growth precursor propane with chloro-methane was recently developed at… (more)

Subjects/Keywords: Defects; Selective Growth; Low temperature; Molten KOH; Characterization; 4H; SiC; Triangular Defects; Dislocations; P+; Precipitates; Epitaxial growth

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APA (6th Edition):

Das, H. (2010). CHARACTERIZATION OF DEFECTS AND EVALUATION OF MATERIAL QUALITY OF LOW TEMPERATURE EPITAXIAL GROWTH. (Doctoral Dissertation). Mississippi State University. Retrieved from http://sun.library.msstate.edu/ETD-db/theses/available/etd-12032009-105353/ ;

Chicago Manual of Style (16th Edition):

Das, Hrishikesh. “CHARACTERIZATION OF DEFECTS AND EVALUATION OF MATERIAL QUALITY OF LOW TEMPERATURE EPITAXIAL GROWTH.” 2010. Doctoral Dissertation, Mississippi State University. Accessed July 18, 2019. http://sun.library.msstate.edu/ETD-db/theses/available/etd-12032009-105353/ ;.

MLA Handbook (7th Edition):

Das, Hrishikesh. “CHARACTERIZATION OF DEFECTS AND EVALUATION OF MATERIAL QUALITY OF LOW TEMPERATURE EPITAXIAL GROWTH.” 2010. Web. 18 Jul 2019.

Vancouver:

Das H. CHARACTERIZATION OF DEFECTS AND EVALUATION OF MATERIAL QUALITY OF LOW TEMPERATURE EPITAXIAL GROWTH. [Internet] [Doctoral dissertation]. Mississippi State University; 2010. [cited 2019 Jul 18]. Available from: http://sun.library.msstate.edu/ETD-db/theses/available/etd-12032009-105353/ ;.

Council of Science Editors:

Das H. CHARACTERIZATION OF DEFECTS AND EVALUATION OF MATERIAL QUALITY OF LOW TEMPERATURE EPITAXIAL GROWTH. [Doctoral Dissertation]. Mississippi State University; 2010. Available from: http://sun.library.msstate.edu/ETD-db/theses/available/etd-12032009-105353/ ;


University of Michigan

25. Demuth, Joshua. Low Temperature Electrodeposition of Epitaxial Films of Covalent Semiconductors.

Degree: PhD, Chemistry, 2017, University of Michigan

 This thesis describes two major advancements in electrodeposition by ec-LLS. The first is a new low temperature (< 90 ℃) epitaxial growth technique, termed electrochemical… (more)

Subjects/Keywords: low temperature electrodeposition of covalent semiconductors; epitaxial growth; germanium nanowires; ec-LLS; ec-LPE; crystal growth; Chemistry; Science

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APA (6th Edition):

Demuth, J. (2017). Low Temperature Electrodeposition of Epitaxial Films of Covalent Semiconductors. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/143926

Chicago Manual of Style (16th Edition):

Demuth, Joshua. “Low Temperature Electrodeposition of Epitaxial Films of Covalent Semiconductors.” 2017. Doctoral Dissertation, University of Michigan. Accessed July 18, 2019. http://hdl.handle.net/2027.42/143926.

MLA Handbook (7th Edition):

Demuth, Joshua. “Low Temperature Electrodeposition of Epitaxial Films of Covalent Semiconductors.” 2017. Web. 18 Jul 2019.

Vancouver:

Demuth J. Low Temperature Electrodeposition of Epitaxial Films of Covalent Semiconductors. [Internet] [Doctoral dissertation]. University of Michigan; 2017. [cited 2019 Jul 18]. Available from: http://hdl.handle.net/2027.42/143926.

Council of Science Editors:

Demuth J. Low Temperature Electrodeposition of Epitaxial Films of Covalent Semiconductors. [Doctoral Dissertation]. University of Michigan; 2017. Available from: http://hdl.handle.net/2027.42/143926

26. Nicoletti, Talitha. Estudo da resistência série de fonte e dreno de transistores SOI FinFETs de porta tripla e com canal tensionado.

Degree: Mestrado, Microeletrônica, 2009, University of São Paulo

Este trabalho apresenta o estudo do comportamento da resistência série de fonte e dreno em transistores SOI FinFET de porta tripla e com canal tensionado.… (more)

Subjects/Keywords: Crescimento seletivo epitaxial; FinFETs; FinFETs; Resistência série de fonte e dreno; Selective epitaxial growth; SOI technology; Source and drain series resistance; Strained transistors; Tecnologia SOI; Transis

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Nicoletti, T. (2009). Estudo da resistência série de fonte e dreno de transistores SOI FinFETs de porta tripla e com canal tensionado. (Masters Thesis). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/3/3140/tde-22042010-152153/ ;

Chicago Manual of Style (16th Edition):

Nicoletti, Talitha. “Estudo da resistência série de fonte e dreno de transistores SOI FinFETs de porta tripla e com canal tensionado.” 2009. Masters Thesis, University of São Paulo. Accessed July 18, 2019. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-22042010-152153/ ;.

MLA Handbook (7th Edition):

Nicoletti, Talitha. “Estudo da resistência série de fonte e dreno de transistores SOI FinFETs de porta tripla e com canal tensionado.” 2009. Web. 18 Jul 2019.

Vancouver:

Nicoletti T. Estudo da resistência série de fonte e dreno de transistores SOI FinFETs de porta tripla e com canal tensionado. [Internet] [Masters thesis]. University of São Paulo; 2009. [cited 2019 Jul 18]. Available from: http://www.teses.usp.br/teses/disponiveis/3/3140/tde-22042010-152153/ ;.

Council of Science Editors:

Nicoletti T. Estudo da resistência série de fonte e dreno de transistores SOI FinFETs de porta tripla e com canal tensionado. [Masters Thesis]. University of São Paulo; 2009. Available from: http://www.teses.usp.br/teses/disponiveis/3/3140/tde-22042010-152153/ ;

27. Santos, Sara Dereste dos. Influência da tensão mecânica (strain) no abaixamento de barreira induzido pelo dreno (DIBL) em FinFETs de porta tripla.

Degree: Mestrado, Microeletrônica, 2010, University of São Paulo

Este trabalho apresenta o estudo da influência do tensionamento mecânico (strain) no efeito de abaixamento de barreira induzido pelo dreno (DIBL) em dispositivos SOI FinFETs… (more)

Subjects/Keywords: Canal tensionado; Crescimento seletivo epitaxial; DIBL effect; Efeito de DIBL; FinFETs; Múltiplas portas; Multiple-gates; Selective epitaxial growth; SOI technology; Strained channel; Tecnologia SOI

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Santos, S. D. d. (2010). Influência da tensão mecânica (strain) no abaixamento de barreira induzido pelo dreno (DIBL) em FinFETs de porta tripla. (Masters Thesis). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/3/3140/tde-12082010-124643/ ;

Chicago Manual of Style (16th Edition):

Santos, Sara Dereste dos. “Influência da tensão mecânica (strain) no abaixamento de barreira induzido pelo dreno (DIBL) em FinFETs de porta tripla.” 2010. Masters Thesis, University of São Paulo. Accessed July 18, 2019. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-12082010-124643/ ;.

MLA Handbook (7th Edition):

Santos, Sara Dereste dos. “Influência da tensão mecânica (strain) no abaixamento de barreira induzido pelo dreno (DIBL) em FinFETs de porta tripla.” 2010. Web. 18 Jul 2019.

Vancouver:

Santos SDd. Influência da tensão mecânica (strain) no abaixamento de barreira induzido pelo dreno (DIBL) em FinFETs de porta tripla. [Internet] [Masters thesis]. University of São Paulo; 2010. [cited 2019 Jul 18]. Available from: http://www.teses.usp.br/teses/disponiveis/3/3140/tde-12082010-124643/ ;.

Council of Science Editors:

Santos SDd. Influência da tensão mecânica (strain) no abaixamento de barreira induzido pelo dreno (DIBL) em FinFETs de porta tripla. [Masters Thesis]. University of São Paulo; 2010. Available from: http://www.teses.usp.br/teses/disponiveis/3/3140/tde-12082010-124643/ ;


Kyoto University / 京都大学

28. Lmouchter, Mohamed. Epitaxial Growth and Characterization for Thin Films of Colossal Magnetoresistive Layered Manganates : 巨大磁気抵抗層状マンガン酸化物薄膜のエピタキシャル成長とその評価に関する研究.

Degree: 博士(工学), 2008, Kyoto University / 京都大学

新制・課程博士

甲第14050号

工博第2962号

Subjects/Keywords: epitaxial growth; thin film; sputtering; magnetoresistance; manganates

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lmouchter, M. (2008). Epitaxial Growth and Characterization for Thin Films of Colossal Magnetoresistive Layered Manganates : 巨大磁気抵抗層状マンガン酸化物薄膜のエピタキシャル成長とその評価に関する研究. (Thesis). Kyoto University / 京都大学. Retrieved from http://hdl.handle.net/2433/61311 ; http://dx.doi.org/10.14989/doctor.k14050

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lmouchter, Mohamed. “Epitaxial Growth and Characterization for Thin Films of Colossal Magnetoresistive Layered Manganates : 巨大磁気抵抗層状マンガン酸化物薄膜のエピタキシャル成長とその評価に関する研究.” 2008. Thesis, Kyoto University / 京都大学. Accessed July 18, 2019. http://hdl.handle.net/2433/61311 ; http://dx.doi.org/10.14989/doctor.k14050.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lmouchter, Mohamed. “Epitaxial Growth and Characterization for Thin Films of Colossal Magnetoresistive Layered Manganates : 巨大磁気抵抗層状マンガン酸化物薄膜のエピタキシャル成長とその評価に関する研究.” 2008. Web. 18 Jul 2019.

Vancouver:

Lmouchter M. Epitaxial Growth and Characterization for Thin Films of Colossal Magnetoresistive Layered Manganates : 巨大磁気抵抗層状マンガン酸化物薄膜のエピタキシャル成長とその評価に関する研究. [Internet] [Thesis]. Kyoto University / 京都大学; 2008. [cited 2019 Jul 18]. Available from: http://hdl.handle.net/2433/61311 ; http://dx.doi.org/10.14989/doctor.k14050.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lmouchter M. Epitaxial Growth and Characterization for Thin Films of Colossal Magnetoresistive Layered Manganates : 巨大磁気抵抗層状マンガン酸化物薄膜のエピタキシャル成長とその評価に関する研究. [Thesis]. Kyoto University / 京都大学; 2008. Available from: http://hdl.handle.net/2433/61311 ; http://dx.doi.org/10.14989/doctor.k14050

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Kyoto University / 京都大学

29. Tsujimura, Ayumu. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長.

Degree: 博士(工学), 2012, Kyoto University / 京都大学

新制・論文博士

乙第12695号

論工博第4084号

Subjects/Keywords: ZnSe; GaN; laser diode; MBE; MOVPE; epitaxial growth

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tsujimura, A. (2012). Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長. (Thesis). Kyoto University / 京都大学. Retrieved from http://hdl.handle.net/2433/161023 ; http://dx.doi.org/10.14989/doctor.r12695

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tsujimura, Ayumu. “Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長.” 2012. Thesis, Kyoto University / 京都大学. Accessed July 18, 2019. http://hdl.handle.net/2433/161023 ; http://dx.doi.org/10.14989/doctor.r12695.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tsujimura, Ayumu. “Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長.” 2012. Web. 18 Jul 2019.

Vancouver:

Tsujimura A. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長. [Internet] [Thesis]. Kyoto University / 京都大学; 2012. [cited 2019 Jul 18]. Available from: http://hdl.handle.net/2433/161023 ; http://dx.doi.org/10.14989/doctor.r12695.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tsujimura A. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長. [Thesis]. Kyoto University / 京都大学; 2012. Available from: http://hdl.handle.net/2433/161023 ; http://dx.doi.org/10.14989/doctor.r12695

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Toledo

30. Borovikov, Valery V. Multi-scale Simulations of Thin-Film Metal Epitaxial Growth.

Degree: PhD, Physics, 2008, University of Toledo

  The main objective of the work presented in this thesis is tocontribute to the understanding of how the growth conditions mayaffect the surface morphology… (more)

Subjects/Keywords: Physics; multi-scale; deposition angle; epitaxial thin-film metal growth; Cu/Cu(100); kinetic Monte Carlo; molecular dynamics

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Borovikov, V. V. (2008). Multi-scale Simulations of Thin-Film Metal Epitaxial Growth. (Doctoral Dissertation). University of Toledo. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=toledo1216928358

Chicago Manual of Style (16th Edition):

Borovikov, Valery V. “Multi-scale Simulations of Thin-Film Metal Epitaxial Growth.” 2008. Doctoral Dissertation, University of Toledo. Accessed July 18, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1216928358.

MLA Handbook (7th Edition):

Borovikov, Valery V. “Multi-scale Simulations of Thin-Film Metal Epitaxial Growth.” 2008. Web. 18 Jul 2019.

Vancouver:

Borovikov VV. Multi-scale Simulations of Thin-Film Metal Epitaxial Growth. [Internet] [Doctoral dissertation]. University of Toledo; 2008. [cited 2019 Jul 18]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1216928358.

Council of Science Editors:

Borovikov VV. Multi-scale Simulations of Thin-Film Metal Epitaxial Growth. [Doctoral Dissertation]. University of Toledo; 2008. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1216928358

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