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You searched for subject:(eigen solutions in semiconductor quantum wells). Showing records 1 – 30 of 97683 total matches.

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Texas A&M University

1. Cho, Yong Hee 1976-. Electronic States and Optical Transitions in Bulk and Quantum Well Structures of III-V Compound Semiconductors.

Degree: 2011, Texas A&M University

 In this work we apply the methods of band structure calculation combined with self-consistent treatment of the light-matter interaction to a variety of problems in… (more)

Subjects/Keywords: conversion efficiency; Poisson equation; densty matrix equation; coupled field equations in lossy media; difference frequency generation; terahertz(THz) radiation; self-consistent calculation; resonant nonlinearity; intersubband transition; 8-band k ? p model; envelope function approximation; Fourier grid Hamiltonian method; delta function method; eigen solutions in semiconductor quantum wells; semiconductor heterostructure; low dimensional semiconductor; interband transition; Kerr effect; 30-band k ? p model; GaMnAs; Diluted magnetic semiconductor

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APA (6th Edition):

Cho, Y. H. 1. (2011). Electronic States and Optical Transitions in Bulk and Quantum Well Structures of III-V Compound Semiconductors. (Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/152436

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cho, Yong Hee 1976-. “Electronic States and Optical Transitions in Bulk and Quantum Well Structures of III-V Compound Semiconductors.” 2011. Thesis, Texas A&M University. Accessed January 19, 2020. http://hdl.handle.net/1969.1/152436.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cho, Yong Hee 1976-. “Electronic States and Optical Transitions in Bulk and Quantum Well Structures of III-V Compound Semiconductors.” 2011. Web. 19 Jan 2020.

Vancouver:

Cho YH1. Electronic States and Optical Transitions in Bulk and Quantum Well Structures of III-V Compound Semiconductors. [Internet] [Thesis]. Texas A&M University; 2011. [cited 2020 Jan 19]. Available from: http://hdl.handle.net/1969.1/152436.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cho YH1. Electronic States and Optical Transitions in Bulk and Quantum Well Structures of III-V Compound Semiconductors. [Thesis]. Texas A&M University; 2011. Available from: http://hdl.handle.net/1969.1/152436

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New Mexico

2. Ahirwar, Pankaj. Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs.

Degree: Electrical and Computer Engineering, 2013, University of New Mexico

 The antimonide based vertical external cavity surface emitting lasers (VECSELs) operating in the 1.8 to 2.8 μm wavelength range are typically based on InGaSb/AlGaSb quantum(more)

Subjects/Keywords: Semiconductor lasers.; Quantum wells.; Transmission electron microscopy.

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APA (6th Edition):

Ahirwar, P. (2013). Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs. (Doctoral Dissertation). University of New Mexico. Retrieved from http://hdl.handle.net/1928/23307

Chicago Manual of Style (16th Edition):

Ahirwar, Pankaj. “Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs.” 2013. Doctoral Dissertation, University of New Mexico. Accessed January 19, 2020. http://hdl.handle.net/1928/23307.

MLA Handbook (7th Edition):

Ahirwar, Pankaj. “Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs.” 2013. Web. 19 Jan 2020.

Vancouver:

Ahirwar P. Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs. [Internet] [Doctoral dissertation]. University of New Mexico; 2013. [cited 2020 Jan 19]. Available from: http://hdl.handle.net/1928/23307.

Council of Science Editors:

Ahirwar P. Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs. [Doctoral Dissertation]. University of New Mexico; 2013. Available from: http://hdl.handle.net/1928/23307


University of Hong Kong

3. 文惠民.; Man, Wai-man. Modeling of vertical cavity surface emitting lasers.

Degree: M. Phil., 2000, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Master

Master of Philosophy

Subjects/Keywords: Semiconductor lasers.; Quantum wells.

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APA (6th Edition):

文惠民.; Man, W. (2000). Modeling of vertical cavity surface emitting lasers. (Masters Thesis). University of Hong Kong. Retrieved from Man, W. [文惠民]. (2000). Modeling of vertical cavity surface emitting lasers. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122319 ; http://dx.doi.org/10.5353/th_b3122319 ; http://hdl.handle.net/10722/33703

Chicago Manual of Style (16th Edition):

文惠民.; Man, Wai-man. “Modeling of vertical cavity surface emitting lasers.” 2000. Masters Thesis, University of Hong Kong. Accessed January 19, 2020. Man, W. [文惠民]. (2000). Modeling of vertical cavity surface emitting lasers. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122319 ; http://dx.doi.org/10.5353/th_b3122319 ; http://hdl.handle.net/10722/33703.

MLA Handbook (7th Edition):

文惠民.; Man, Wai-man. “Modeling of vertical cavity surface emitting lasers.” 2000. Web. 19 Jan 2020.

Vancouver:

文惠民.; Man W. Modeling of vertical cavity surface emitting lasers. [Internet] [Masters thesis]. University of Hong Kong; 2000. [cited 2020 Jan 19]. Available from: Man, W. [文惠民]. (2000). Modeling of vertical cavity surface emitting lasers. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122319 ; http://dx.doi.org/10.5353/th_b3122319 ; http://hdl.handle.net/10722/33703.

Council of Science Editors:

文惠民.; Man W. Modeling of vertical cavity surface emitting lasers. [Masters Thesis]. University of Hong Kong; 2000. Available from: Man, W. [文惠民]. (2000). Modeling of vertical cavity surface emitting lasers. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122319 ; http://dx.doi.org/10.5353/th_b3122319 ; http://hdl.handle.net/10722/33703


University of Hong Kong

4. 陳柱元.; Chan, Chu-yuen. Electronic and optical properties of interdiffused III-V semiconductorquantum well laser.

Degree: PhD, 1997, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Doctoral

Doctor of Philosophy

Subjects/Keywords: Quantum wells.; Optoelectronics.; Semiconductor lasers.

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APA (6th Edition):

陳柱元.; Chan, C. (1997). Electronic and optical properties of interdiffused III-V semiconductorquantum well laser. (Doctoral Dissertation). University of Hong Kong. Retrieved from Chan, C. [陳柱元]. (1997). Electronic and optical properties of interdiffused III-V semiconductor quantum well laser. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123653 ; http://dx.doi.org/10.5353/th_b3123653 ; http://hdl.handle.net/10722/34403

Chicago Manual of Style (16th Edition):

陳柱元.; Chan, Chu-yuen. “Electronic and optical properties of interdiffused III-V semiconductorquantum well laser.” 1997. Doctoral Dissertation, University of Hong Kong. Accessed January 19, 2020. Chan, C. [陳柱元]. (1997). Electronic and optical properties of interdiffused III-V semiconductor quantum well laser. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123653 ; http://dx.doi.org/10.5353/th_b3123653 ; http://hdl.handle.net/10722/34403.

MLA Handbook (7th Edition):

陳柱元.; Chan, Chu-yuen. “Electronic and optical properties of interdiffused III-V semiconductorquantum well laser.” 1997. Web. 19 Jan 2020.

Vancouver:

陳柱元.; Chan C. Electronic and optical properties of interdiffused III-V semiconductorquantum well laser. [Internet] [Doctoral dissertation]. University of Hong Kong; 1997. [cited 2020 Jan 19]. Available from: Chan, C. [陳柱元]. (1997). Electronic and optical properties of interdiffused III-V semiconductor quantum well laser. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123653 ; http://dx.doi.org/10.5353/th_b3123653 ; http://hdl.handle.net/10722/34403.

Council of Science Editors:

陳柱元.; Chan C. Electronic and optical properties of interdiffused III-V semiconductorquantum well laser. [Doctoral Dissertation]. University of Hong Kong; 1997. Available from: Chan, C. [陳柱元]. (1997). Electronic and optical properties of interdiffused III-V semiconductor quantum well laser. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123653 ; http://dx.doi.org/10.5353/th_b3123653 ; http://hdl.handle.net/10722/34403


University of Bath

5. Harris, C. I. Optical studies of impurities in quantum wells.

Degree: PhD, 1991, University of Bath

Subjects/Keywords: 530.41; Semiconductor quantum wells

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APA (6th Edition):

Harris, C. I. (1991). Optical studies of impurities in quantum wells. (Doctoral Dissertation). University of Bath. Retrieved from https://researchportal.bath.ac.uk/en/studentthesis/optical-studies-of-impurities-in-quantum-wells(55bbb8a4-db64-44c6-a10f-184d9116a777).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292840

Chicago Manual of Style (16th Edition):

Harris, C I. “Optical studies of impurities in quantum wells.” 1991. Doctoral Dissertation, University of Bath. Accessed January 19, 2020. https://researchportal.bath.ac.uk/en/studentthesis/optical-studies-of-impurities-in-quantum-wells(55bbb8a4-db64-44c6-a10f-184d9116a777).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292840.

MLA Handbook (7th Edition):

Harris, C I. “Optical studies of impurities in quantum wells.” 1991. Web. 19 Jan 2020.

Vancouver:

Harris CI. Optical studies of impurities in quantum wells. [Internet] [Doctoral dissertation]. University of Bath; 1991. [cited 2020 Jan 19]. Available from: https://researchportal.bath.ac.uk/en/studentthesis/optical-studies-of-impurities-in-quantum-wells(55bbb8a4-db64-44c6-a10f-184d9116a777).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292840.

Council of Science Editors:

Harris CI. Optical studies of impurities in quantum wells. [Doctoral Dissertation]. University of Bath; 1991. Available from: https://researchportal.bath.ac.uk/en/studentthesis/optical-studies-of-impurities-in-quantum-wells(55bbb8a4-db64-44c6-a10f-184d9116a777).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292840


University of Arkansas

6. Grant, Perry Christian. GeSn Thin Film Epitaxy and Quantum Wells for Optoelectronic Devices.

Degree: PhD, 2018, University of Arkansas

  Group IV photonics is an effort to generate viable infrared optoelectronic devices using group IV materials. Si-based optoelectronics have received monumental research since Si… (more)

Subjects/Keywords: CVD; GeSn; Growth; Quantum Wells; Semiconductor; Electronic Devices and Semiconductor Manufacturing; Nanoscience and Nanotechnology

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APA (6th Edition):

Grant, P. C. (2018). GeSn Thin Film Epitaxy and Quantum Wells for Optoelectronic Devices. (Doctoral Dissertation). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/3096

Chicago Manual of Style (16th Edition):

Grant, Perry Christian. “GeSn Thin Film Epitaxy and Quantum Wells for Optoelectronic Devices.” 2018. Doctoral Dissertation, University of Arkansas. Accessed January 19, 2020. https://scholarworks.uark.edu/etd/3096.

MLA Handbook (7th Edition):

Grant, Perry Christian. “GeSn Thin Film Epitaxy and Quantum Wells for Optoelectronic Devices.” 2018. Web. 19 Jan 2020.

Vancouver:

Grant PC. GeSn Thin Film Epitaxy and Quantum Wells for Optoelectronic Devices. [Internet] [Doctoral dissertation]. University of Arkansas; 2018. [cited 2020 Jan 19]. Available from: https://scholarworks.uark.edu/etd/3096.

Council of Science Editors:

Grant PC. GeSn Thin Film Epitaxy and Quantum Wells for Optoelectronic Devices. [Doctoral Dissertation]. University of Arkansas; 2018. Available from: https://scholarworks.uark.edu/etd/3096


Université Montpellier II

7. Barate, Philippe. Génération et détection optique d'ondes de spin dans les puits quantiques CdMnTe dopés n : Optical generation and detection of spin waves in n doped CdMnTe quantum well.

Degree: Docteur es, Milieux denses et matériaux, 2010, Université Montpellier II

Ce manuscrit présente une étude sur les ondes de spin de vecteur d'onde nul par le moyen de la rotation Kerr résolue en temps. Les… (more)

Subjects/Keywords: Ondes de spin; Puits quantique; Semiconducteur magnétique dilué; Spin waves; Quantum wells; Diluted magnetic semiconductor

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APA (6th Edition):

Barate, P. (2010). Génération et détection optique d'ondes de spin dans les puits quantiques CdMnTe dopés n : Optical generation and detection of spin waves in n doped CdMnTe quantum well. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2010MON20160

Chicago Manual of Style (16th Edition):

Barate, Philippe. “Génération et détection optique d'ondes de spin dans les puits quantiques CdMnTe dopés n : Optical generation and detection of spin waves in n doped CdMnTe quantum well.” 2010. Doctoral Dissertation, Université Montpellier II. Accessed January 19, 2020. http://www.theses.fr/2010MON20160.

MLA Handbook (7th Edition):

Barate, Philippe. “Génération et détection optique d'ondes de spin dans les puits quantiques CdMnTe dopés n : Optical generation and detection of spin waves in n doped CdMnTe quantum well.” 2010. Web. 19 Jan 2020.

Vancouver:

Barate P. Génération et détection optique d'ondes de spin dans les puits quantiques CdMnTe dopés n : Optical generation and detection of spin waves in n doped CdMnTe quantum well. [Internet] [Doctoral dissertation]. Université Montpellier II; 2010. [cited 2020 Jan 19]. Available from: http://www.theses.fr/2010MON20160.

Council of Science Editors:

Barate P. Génération et détection optique d'ondes de spin dans les puits quantiques CdMnTe dopés n : Optical generation and detection of spin waves in n doped CdMnTe quantum well. [Doctoral Dissertation]. Université Montpellier II; 2010. Available from: http://www.theses.fr/2010MON20160


University of Hong Kong

8. 盧志偉; Lo, Chi-wai. Improvement of semiconductor laser diodes' characteristics by using diffused quantum wells structure.

Degree: M. Phil., 1997, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Master

Master of Philosophy

Subjects/Keywords: Quantum wells.; Diodes, Semiconductor.; Semiconductor lasers.; Electronic structure.

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APA (6th Edition):

盧志偉; Lo, C. (1997). Improvement of semiconductor laser diodes' characteristics by using diffused quantum wells structure. (Masters Thesis). University of Hong Kong. Retrieved from Lo, C. [盧志偉]. (1997). Improvement of semiconductor laser diodes' characteristics by using diffused quantum wells structure. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3121559 ; http://dx.doi.org/10.5353/th_b3121559 ; http://hdl.handle.net/10722/34114

Chicago Manual of Style (16th Edition):

盧志偉; Lo, Chi-wai. “Improvement of semiconductor laser diodes' characteristics by using diffused quantum wells structure.” 1997. Masters Thesis, University of Hong Kong. Accessed January 19, 2020. Lo, C. [盧志偉]. (1997). Improvement of semiconductor laser diodes' characteristics by using diffused quantum wells structure. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3121559 ; http://dx.doi.org/10.5353/th_b3121559 ; http://hdl.handle.net/10722/34114.

MLA Handbook (7th Edition):

盧志偉; Lo, Chi-wai. “Improvement of semiconductor laser diodes' characteristics by using diffused quantum wells structure.” 1997. Web. 19 Jan 2020.

Vancouver:

盧志偉; Lo C. Improvement of semiconductor laser diodes' characteristics by using diffused quantum wells structure. [Internet] [Masters thesis]. University of Hong Kong; 1997. [cited 2020 Jan 19]. Available from: Lo, C. [盧志偉]. (1997). Improvement of semiconductor laser diodes' characteristics by using diffused quantum wells structure. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3121559 ; http://dx.doi.org/10.5353/th_b3121559 ; http://hdl.handle.net/10722/34114.

Council of Science Editors:

盧志偉; Lo C. Improvement of semiconductor laser diodes' characteristics by using diffused quantum wells structure. [Masters Thesis]. University of Hong Kong; 1997. Available from: Lo, C. [盧志偉]. (1997). Improvement of semiconductor laser diodes' characteristics by using diffused quantum wells structure. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3121559 ; http://dx.doi.org/10.5353/th_b3121559 ; http://hdl.handle.net/10722/34114


University of North Texas

9. Huang, Xuren. Linear, Nonlinear Optical and Transport Properties of Quantum Wells Composed of Short Period Strained InAs/GaAs Superlattices.

Degree: 1993, University of North Texas

 In this work, ordered all-binary short-period strained InAs/GaAs superlattice quantum wells were studied as an alternative to strained ternary alloy InGaAs/GaAs quantum wells. InGaAs quantum(more)

Subjects/Keywords: Quantum wells.; Doped semiconductor superlattices.; quantum well; binary structures

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APA (6th Edition):

Huang, X. (1993). Linear, Nonlinear Optical and Transport Properties of Quantum Wells Composed of Short Period Strained InAs/GaAs Superlattices. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc278855/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Xuren. “Linear, Nonlinear Optical and Transport Properties of Quantum Wells Composed of Short Period Strained InAs/GaAs Superlattices.” 1993. Thesis, University of North Texas. Accessed January 19, 2020. https://digital.library.unt.edu/ark:/67531/metadc278855/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Xuren. “Linear, Nonlinear Optical and Transport Properties of Quantum Wells Composed of Short Period Strained InAs/GaAs Superlattices.” 1993. Web. 19 Jan 2020.

Vancouver:

Huang X. Linear, Nonlinear Optical and Transport Properties of Quantum Wells Composed of Short Period Strained InAs/GaAs Superlattices. [Internet] [Thesis]. University of North Texas; 1993. [cited 2020 Jan 19]. Available from: https://digital.library.unt.edu/ark:/67531/metadc278855/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang X. Linear, Nonlinear Optical and Transport Properties of Quantum Wells Composed of Short Period Strained InAs/GaAs Superlattices. [Thesis]. University of North Texas; 1993. Available from: https://digital.library.unt.edu/ark:/67531/metadc278855/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

10. Lim, Caroline Botum. Hétérostructures GaN/Al(Ga)N pour l'optoélectronique infrarouge : orientations polaires et non-polaires : GaN/AlGaN heterostructures for infrared optoelectronics : polar vs nonpolar orientations.

Degree: Docteur es, Nanophysique, 2017, Grenoble Alpes

 Les transitions intersousbandes (ISB) sont des transitions d’énergie entre des états électroniques dans un puits quantique. Les nanostructures GaN/AlGaN sont prometteuses pour le développement de… (more)

Subjects/Keywords: Puits quantiques; Semi-Conducteur; Nitrure; Intersousbande; Nanostructures; Infrarouge; Quantum wells; Semiconductor; Nitride; Intersubband; Nanostructures; Infrared; 530

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APA (6th Edition):

Lim, C. B. (2017). Hétérostructures GaN/Al(Ga)N pour l'optoélectronique infrarouge : orientations polaires et non-polaires : GaN/AlGaN heterostructures for infrared optoelectronics : polar vs nonpolar orientations. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2017GREAY030

Chicago Manual of Style (16th Edition):

Lim, Caroline Botum. “Hétérostructures GaN/Al(Ga)N pour l'optoélectronique infrarouge : orientations polaires et non-polaires : GaN/AlGaN heterostructures for infrared optoelectronics : polar vs nonpolar orientations.” 2017. Doctoral Dissertation, Grenoble Alpes. Accessed January 19, 2020. http://www.theses.fr/2017GREAY030.

MLA Handbook (7th Edition):

Lim, Caroline Botum. “Hétérostructures GaN/Al(Ga)N pour l'optoélectronique infrarouge : orientations polaires et non-polaires : GaN/AlGaN heterostructures for infrared optoelectronics : polar vs nonpolar orientations.” 2017. Web. 19 Jan 2020.

Vancouver:

Lim CB. Hétérostructures GaN/Al(Ga)N pour l'optoélectronique infrarouge : orientations polaires et non-polaires : GaN/AlGaN heterostructures for infrared optoelectronics : polar vs nonpolar orientations. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2017. [cited 2020 Jan 19]. Available from: http://www.theses.fr/2017GREAY030.

Council of Science Editors:

Lim CB. Hétérostructures GaN/Al(Ga)N pour l'optoélectronique infrarouge : orientations polaires et non-polaires : GaN/AlGaN heterostructures for infrared optoelectronics : polar vs nonpolar orientations. [Doctoral Dissertation]. Grenoble Alpes; 2017. Available from: http://www.theses.fr/2017GREAY030


University of Oxford

11. Chan, Christopher Chang Sing. Dynamics of nanostructured light emitted diodes.

Degree: PhD, 2014, University of Oxford

 Experimental investigations of the optical properties of GaN nanostructured light emitting diode (LED) arrays are presented. Microphotoluminescence spectroscopy with pulsed and continuous wave lasers was… (more)

Subjects/Keywords: 621.3815; Optoelectronics; Advanced materials; Condensed Matter Physics; Nanostructures; Semiconductor devices; Surface nanoscience; Microscopy and microanalysis; Laser Spectroscopy; light emitting diodes; quantum optoelectronics; quantum wells; Gallium nitride; dynamics; photoluminescence

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APA (6th Edition):

Chan, C. C. S. (2014). Dynamics of nanostructured light emitted diodes. (Doctoral Dissertation). University of Oxford. Retrieved from http://ora.ox.ac.uk/objects/uuid:8ca45bb5-7ebf-4f25-a06e-8ab14602382d ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.640050

Chicago Manual of Style (16th Edition):

Chan, Christopher Chang Sing. “Dynamics of nanostructured light emitted diodes.” 2014. Doctoral Dissertation, University of Oxford. Accessed January 19, 2020. http://ora.ox.ac.uk/objects/uuid:8ca45bb5-7ebf-4f25-a06e-8ab14602382d ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.640050.

MLA Handbook (7th Edition):

Chan, Christopher Chang Sing. “Dynamics of nanostructured light emitted diodes.” 2014. Web. 19 Jan 2020.

Vancouver:

Chan CCS. Dynamics of nanostructured light emitted diodes. [Internet] [Doctoral dissertation]. University of Oxford; 2014. [cited 2020 Jan 19]. Available from: http://ora.ox.ac.uk/objects/uuid:8ca45bb5-7ebf-4f25-a06e-8ab14602382d ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.640050.

Council of Science Editors:

Chan CCS. Dynamics of nanostructured light emitted diodes. [Doctoral Dissertation]. University of Oxford; 2014. Available from: http://ora.ox.ac.uk/objects/uuid:8ca45bb5-7ebf-4f25-a06e-8ab14602382d ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.640050


RMIT University

12. Rezaee, A. Phase-periodic quantum structures and perturbed potential wells.

Degree: 2009, RMIT University

 The restrictions of micro-scale systems are approaching rapidly. In anticipation of this development, nano-scale electronics has become the focus of many researchers and engineers in… (more)

Subjects/Keywords: Fields of Research; Quantum wells

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APA (6th Edition):

Rezaee, A. (2009). Phase-periodic quantum structures and perturbed potential wells. (Thesis). RMIT University. Retrieved from http://researchbank.rmit.edu.au/view/rmit:6791

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rezaee, A. “Phase-periodic quantum structures and perturbed potential wells.” 2009. Thesis, RMIT University. Accessed January 19, 2020. http://researchbank.rmit.edu.au/view/rmit:6791.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rezaee, A. “Phase-periodic quantum structures and perturbed potential wells.” 2009. Web. 19 Jan 2020.

Vancouver:

Rezaee A. Phase-periodic quantum structures and perturbed potential wells. [Internet] [Thesis]. RMIT University; 2009. [cited 2020 Jan 19]. Available from: http://researchbank.rmit.edu.au/view/rmit:6791.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rezaee A. Phase-periodic quantum structures and perturbed potential wells. [Thesis]. RMIT University; 2009. Available from: http://researchbank.rmit.edu.au/view/rmit:6791

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

13. Harff, Nathan E. Electron transport in coupled double quantum wells and wires.

Degree: PhD, Electrical and Computer Engineering, 1997, Oregon State University

Subjects/Keywords: Quantum wells

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APA (6th Edition):

Harff, N. E. (1997). Electron transport in coupled double quantum wells and wires. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/34430

Chicago Manual of Style (16th Edition):

Harff, Nathan E. “Electron transport in coupled double quantum wells and wires.” 1997. Doctoral Dissertation, Oregon State University. Accessed January 19, 2020. http://hdl.handle.net/1957/34430.

MLA Handbook (7th Edition):

Harff, Nathan E. “Electron transport in coupled double quantum wells and wires.” 1997. Web. 19 Jan 2020.

Vancouver:

Harff NE. Electron transport in coupled double quantum wells and wires. [Internet] [Doctoral dissertation]. Oregon State University; 1997. [cited 2020 Jan 19]. Available from: http://hdl.handle.net/1957/34430.

Council of Science Editors:

Harff NE. Electron transport in coupled double quantum wells and wires. [Doctoral Dissertation]. Oregon State University; 1997. Available from: http://hdl.handle.net/1957/34430


University of Houston

14. Vijaya, Gopi Krishna 1986-. III-V DILUTE NITRIDE MULTI-QUANTUM WELL SOLAR CELLS FOR HIGH EFFICIENCY PHOTOVOLTAICS.

Degree: Physics, Department of, 2014, University of Houston

 Addition of a few percent of nitrogen to conventional III-V semiconductor alloys creates a surprising reduction of the host band-gap. Due to their unusual band-gap… (more)

Subjects/Keywords: photovoltaics; quantum wells; semiconductors

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APA (6th Edition):

Vijaya, G. K. 1. (2014). III-V DILUTE NITRIDE MULTI-QUANTUM WELL SOLAR CELLS FOR HIGH EFFICIENCY PHOTOVOLTAICS. (Thesis). University of Houston. Retrieved from http://hdl.handle.net/10657/1678

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Vijaya, Gopi Krishna 1986-. “III-V DILUTE NITRIDE MULTI-QUANTUM WELL SOLAR CELLS FOR HIGH EFFICIENCY PHOTOVOLTAICS.” 2014. Thesis, University of Houston. Accessed January 19, 2020. http://hdl.handle.net/10657/1678.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Vijaya, Gopi Krishna 1986-. “III-V DILUTE NITRIDE MULTI-QUANTUM WELL SOLAR CELLS FOR HIGH EFFICIENCY PHOTOVOLTAICS.” 2014. Web. 19 Jan 2020.

Vancouver:

Vijaya GK1. III-V DILUTE NITRIDE MULTI-QUANTUM WELL SOLAR CELLS FOR HIGH EFFICIENCY PHOTOVOLTAICS. [Internet] [Thesis]. University of Houston; 2014. [cited 2020 Jan 19]. Available from: http://hdl.handle.net/10657/1678.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vijaya GK1. III-V DILUTE NITRIDE MULTI-QUANTUM WELL SOLAR CELLS FOR HIGH EFFICIENCY PHOTOVOLTAICS. [Thesis]. University of Houston; 2014. Available from: http://hdl.handle.net/10657/1678

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

15. Jim, Lydia Man Wai. Physics of Gallium Nitride Quantum Wells.

Degree: 2019, University of Manchester

 In this thesis, studies performed on InGaN/GaN quantum well (QW) structures using photoluminescence (PL) spectroscopy are presented. Green light-emitting InGaN/GaN QW structures with a varying… (more)

Subjects/Keywords: InGaN; Gallium Nitride; Quantum Wells

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APA (6th Edition):

Jim, L. M. W. (2019). Physics of Gallium Nitride Quantum Wells. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:319236

Chicago Manual of Style (16th Edition):

Jim, Lydia Man Wai. “Physics of Gallium Nitride Quantum Wells.” 2019. Doctoral Dissertation, University of Manchester. Accessed January 19, 2020. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:319236.

MLA Handbook (7th Edition):

Jim, Lydia Man Wai. “Physics of Gallium Nitride Quantum Wells.” 2019. Web. 19 Jan 2020.

Vancouver:

Jim LMW. Physics of Gallium Nitride Quantum Wells. [Internet] [Doctoral dissertation]. University of Manchester; 2019. [cited 2020 Jan 19]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:319236.

Council of Science Editors:

Jim LMW. Physics of Gallium Nitride Quantum Wells. [Doctoral Dissertation]. University of Manchester; 2019. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:319236

16. Bejoy, Varghese. Theoretical investigations of delay induced effects in semiconductor lasers with optical and optoelectronic feedback.

Degree: 2015, Cochin University of Science and Technology

Semiconductor lasers with different types of feedback schemes have been an active research area for many years. Feedback can induce complex phenomena in semiconductor lasers… (more)

Subjects/Keywords: Semiconductor Lasers; Nonlinearities in Semiconductor Lasers; QuantumWell and Quantum Dot Lasers; Ikeda system; Semiconductor laser with delayed feedback .

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APA (6th Edition):

Bejoy, V. (2015). Theoretical investigations of delay induced effects in semiconductor lasers with optical and optoelectronic feedback. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/5147

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bejoy, Varghese. “Theoretical investigations of delay induced effects in semiconductor lasers with optical and optoelectronic feedback.” 2015. Thesis, Cochin University of Science and Technology. Accessed January 19, 2020. http://dyuthi.cusat.ac.in/purl/5147.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bejoy, Varghese. “Theoretical investigations of delay induced effects in semiconductor lasers with optical and optoelectronic feedback.” 2015. Web. 19 Jan 2020.

Vancouver:

Bejoy V. Theoretical investigations of delay induced effects in semiconductor lasers with optical and optoelectronic feedback. [Internet] [Thesis]. Cochin University of Science and Technology; 2015. [cited 2020 Jan 19]. Available from: http://dyuthi.cusat.ac.in/purl/5147.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bejoy V. Theoretical investigations of delay induced effects in semiconductor lasers with optical and optoelectronic feedback. [Thesis]. Cochin University of Science and Technology; 2015. Available from: http://dyuthi.cusat.ac.in/purl/5147

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

17. Wu, Chih-Hung, 1960-. Thin p-clad InGaAs single quantum well lasers.

Degree: PhD, Electrical and Computer Engineering, 1996, University of Florida

Subjects/Keywords: Diodes; Laser power; Lasers; Lasing; Light refraction; Quantum wells; Sensors; Stripes; Threshold currents; Wavelengths; Quantum wells; Semiconductor lasers

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wu, Chih-Hung, 1. (1996). Thin p-clad InGaAs single quantum well lasers. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/AA00035095

Chicago Manual of Style (16th Edition):

Wu, Chih-Hung, 1960-. “Thin p-clad InGaAs single quantum well lasers.” 1996. Doctoral Dissertation, University of Florida. Accessed January 19, 2020. http://ufdc.ufl.edu/AA00035095.

MLA Handbook (7th Edition):

Wu, Chih-Hung, 1960-. “Thin p-clad InGaAs single quantum well lasers.” 1996. Web. 19 Jan 2020.

Vancouver:

Wu, Chih-Hung 1. Thin p-clad InGaAs single quantum well lasers. [Internet] [Doctoral dissertation]. University of Florida; 1996. [cited 2020 Jan 19]. Available from: http://ufdc.ufl.edu/AA00035095.

Council of Science Editors:

Wu, Chih-Hung 1. Thin p-clad InGaAs single quantum well lasers. [Doctoral Dissertation]. University of Florida; 1996. Available from: http://ufdc.ufl.edu/AA00035095


University of Ottawa

18. Hsieh, Chang-Yu. Quantum Circuit Based on Electron Spins in Semiconductor Quantum Dots .

Degree: 2012, University of Ottawa

 In this thesis, I present a microscopic theory of quantum circuits based on interacting electron spins in quantum dot molecules. We use the Linear Combination… (more)

Subjects/Keywords: Quantum Information Processing; Semiconductor Quantum Dots; Strongly Correlated Electronic System in Nanostructures; Electron Spin Qubits; Quantum Circuits; Mesoscale and Nanoscale Physics

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APA (6th Edition):

Hsieh, C. (2012). Quantum Circuit Based on Electron Spins in Semiconductor Quantum Dots . (Thesis). University of Ottawa. Retrieved from http://hdl.handle.net/10393/20738

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsieh, Chang-Yu. “Quantum Circuit Based on Electron Spins in Semiconductor Quantum Dots .” 2012. Thesis, University of Ottawa. Accessed January 19, 2020. http://hdl.handle.net/10393/20738.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsieh, Chang-Yu. “Quantum Circuit Based on Electron Spins in Semiconductor Quantum Dots .” 2012. Web. 19 Jan 2020.

Vancouver:

Hsieh C. Quantum Circuit Based on Electron Spins in Semiconductor Quantum Dots . [Internet] [Thesis]. University of Ottawa; 2012. [cited 2020 Jan 19]. Available from: http://hdl.handle.net/10393/20738.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsieh C. Quantum Circuit Based on Electron Spins in Semiconductor Quantum Dots . [Thesis]. University of Ottawa; 2012. Available from: http://hdl.handle.net/10393/20738

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

19. Bovkun, Leonid. Etude de la structure de bande de puits quantiques à base de semi-conducteurs de faible bande interdite HgTe et InAs : Investigation of the band structure of quantum wells based on gapless and narrow-band semiconductors HgTe and InAs.

Degree: Docteur es, Physique des matériaux, 2018, Grenoble Alpes; Académie des sciences de Russie

Le tellurure de mercure et de cadmium (HgCdTe ou MCT) est un matériau reconnu pour la physique de la matière condensée, dont l'histoire, datant aujourd'hui… (more)

Subjects/Keywords: Magnétospectroscopie optique THz; Semiconducteur à bande étroite; CdHgTe; Structure électronique; Puits quantiques; Isolants topologiques; THz magnetospectroscopy; Narrow-Gap semiconductor; CdHgTe; Electronic structure; Quantum wells; Topological insulators; 530

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APA (6th Edition):

Bovkun, L. (2018). Etude de la structure de bande de puits quantiques à base de semi-conducteurs de faible bande interdite HgTe et InAs : Investigation of the band structure of quantum wells based on gapless and narrow-band semiconductors HgTe and InAs. (Doctoral Dissertation). Grenoble Alpes; Académie des sciences de Russie. Retrieved from http://www.theses.fr/2018GREAY060

Chicago Manual of Style (16th Edition):

Bovkun, Leonid. “Etude de la structure de bande de puits quantiques à base de semi-conducteurs de faible bande interdite HgTe et InAs : Investigation of the band structure of quantum wells based on gapless and narrow-band semiconductors HgTe and InAs.” 2018. Doctoral Dissertation, Grenoble Alpes; Académie des sciences de Russie. Accessed January 19, 2020. http://www.theses.fr/2018GREAY060.

MLA Handbook (7th Edition):

Bovkun, Leonid. “Etude de la structure de bande de puits quantiques à base de semi-conducteurs de faible bande interdite HgTe et InAs : Investigation of the band structure of quantum wells based on gapless and narrow-band semiconductors HgTe and InAs.” 2018. Web. 19 Jan 2020.

Vancouver:

Bovkun L. Etude de la structure de bande de puits quantiques à base de semi-conducteurs de faible bande interdite HgTe et InAs : Investigation of the band structure of quantum wells based on gapless and narrow-band semiconductors HgTe and InAs. [Internet] [Doctoral dissertation]. Grenoble Alpes; Académie des sciences de Russie; 2018. [cited 2020 Jan 19]. Available from: http://www.theses.fr/2018GREAY060.

Council of Science Editors:

Bovkun L. Etude de la structure de bande de puits quantiques à base de semi-conducteurs de faible bande interdite HgTe et InAs : Investigation of the band structure of quantum wells based on gapless and narrow-band semiconductors HgTe and InAs. [Doctoral Dissertation]. Grenoble Alpes; Académie des sciences de Russie; 2018. Available from: http://www.theses.fr/2018GREAY060


University of Florida

20. Yoon, John. Ridge waveguide mid-infrared InGaAsSb quantum well lasers fabricated with pulsed anodization etching.

Degree: 2000, University of Florida

Subjects/Keywords: Diodes; Electrolytes; Etching; Lasers; Oxides; Room temperature; Semiconductor lasers; Semiconductor wafers; Stripes; Wavelengths; Quantum wells ( fast ); Semiconductor lasers ( fast )

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APA (6th Edition):

Yoon, J. (2000). Ridge waveguide mid-infrared InGaAsSb quantum well lasers fabricated with pulsed anodization etching. (Thesis). University of Florida. Retrieved from http://ufdc.ufl.edu/AA00024545

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yoon, John. “Ridge waveguide mid-infrared InGaAsSb quantum well lasers fabricated with pulsed anodization etching.” 2000. Thesis, University of Florida. Accessed January 19, 2020. http://ufdc.ufl.edu/AA00024545.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yoon, John. “Ridge waveguide mid-infrared InGaAsSb quantum well lasers fabricated with pulsed anodization etching.” 2000. Web. 19 Jan 2020.

Vancouver:

Yoon J. Ridge waveguide mid-infrared InGaAsSb quantum well lasers fabricated with pulsed anodization etching. [Internet] [Thesis]. University of Florida; 2000. [cited 2020 Jan 19]. Available from: http://ufdc.ufl.edu/AA00024545.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yoon J. Ridge waveguide mid-infrared InGaAsSb quantum well lasers fabricated with pulsed anodization etching. [Thesis]. University of Florida; 2000. Available from: http://ufdc.ufl.edu/AA00024545

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Reentilä, Outi. Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures.

Degree: 2007, Helsinki University of Technology

In this work epitaxial growth and in situ characterisation of dilute nitride quantum well (QW) structures are studied. Dilute nitrides are III-V compound semiconductors with… (more)

Subjects/Keywords: MOVPE; epitaxy; quantum wells; in situ monitoring; dilute nitrides; MOVPE; epitaksia; kvanttikaivo; valmistuksenaikainen tarkkailu; laimeat nitridit

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APA (6th Edition):

Reentilä, O. (2007). Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2007/isbn9789512287314/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Reentilä, Outi. “Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures.” 2007. Thesis, Helsinki University of Technology. Accessed January 19, 2020. http://lib.tkk.fi/Diss/2007/isbn9789512287314/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Reentilä, Outi. “Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures.” 2007. Web. 19 Jan 2020.

Vancouver:

Reentilä O. Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures. [Internet] [Thesis]. Helsinki University of Technology; 2007. [cited 2020 Jan 19]. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512287314/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Reentilä O. Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures. [Thesis]. Helsinki University of Technology; 2007. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512287314/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

22. Fernandes, Fernando Massa. Fotodetectores infravermelhos de alta eficiência baseados em poços quânticos crescidos por epitaxia de feixes moleculares.

Degree: PhD, Física, 2013, University of São Paulo

 Fotodetectores baseados em poços quânticos (QWIPs Quantum¬-Well Infrared Photodetectors) possuem inúmeras aplicações nos campos da medicina, engenharia, defesa e monitoramento meteorológico e ambiental. O espectro… (more)

Subjects/Keywords: Fotodetectores; Photodetectors; poços quânticos; quantum wells

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APA (6th Edition):

Fernandes, F. M. (2013). Fotodetectores infravermelhos de alta eficiência baseados em poços quânticos crescidos por epitaxia de feixes moleculares. (Doctoral Dissertation). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/43/43134/tde-24092014-120342/ ;

Chicago Manual of Style (16th Edition):

Fernandes, Fernando Massa. “Fotodetectores infravermelhos de alta eficiência baseados em poços quânticos crescidos por epitaxia de feixes moleculares.” 2013. Doctoral Dissertation, University of São Paulo. Accessed January 19, 2020. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-24092014-120342/ ;.

MLA Handbook (7th Edition):

Fernandes, Fernando Massa. “Fotodetectores infravermelhos de alta eficiência baseados em poços quânticos crescidos por epitaxia de feixes moleculares.” 2013. Web. 19 Jan 2020.

Vancouver:

Fernandes FM. Fotodetectores infravermelhos de alta eficiência baseados em poços quânticos crescidos por epitaxia de feixes moleculares. [Internet] [Doctoral dissertation]. University of São Paulo; 2013. [cited 2020 Jan 19]. Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-24092014-120342/ ;.

Council of Science Editors:

Fernandes FM. Fotodetectores infravermelhos de alta eficiência baseados em poços quânticos crescidos por epitaxia de feixes moleculares. [Doctoral Dissertation]. University of São Paulo; 2013. Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-24092014-120342/ ;


University of Hong Kong

23. 陳勇; Chan, Yung. Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications.

Degree: M. Phil., 1998, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Master

Master of Philosophy

Subjects/Keywords: Photonics.; Quantum wells.

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APA (6th Edition):

陳勇; Chan, Y. (1998). Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications. (Masters Thesis). University of Hong Kong. Retrieved from Chan, Y. [陳勇]. (1998). Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3121502 ; http://dx.doi.org/10.5353/th_b3121502 ; http://hdl.handle.net/10722/33448

Chicago Manual of Style (16th Edition):

陳勇; Chan, Yung. “Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications.” 1998. Masters Thesis, University of Hong Kong. Accessed January 19, 2020. Chan, Y. [陳勇]. (1998). Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3121502 ; http://dx.doi.org/10.5353/th_b3121502 ; http://hdl.handle.net/10722/33448.

MLA Handbook (7th Edition):

陳勇; Chan, Yung. “Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications.” 1998. Web. 19 Jan 2020.

Vancouver:

陳勇; Chan Y. Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications. [Internet] [Masters thesis]. University of Hong Kong; 1998. [cited 2020 Jan 19]. Available from: Chan, Y. [陳勇]. (1998). Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3121502 ; http://dx.doi.org/10.5353/th_b3121502 ; http://hdl.handle.net/10722/33448.

Council of Science Editors:

陳勇; Chan Y. Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications. [Masters Thesis]. University of Hong Kong; 1998. Available from: Chan, Y. [陳勇]. (1998). Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3121502 ; http://dx.doi.org/10.5353/th_b3121502 ; http://hdl.handle.net/10722/33448


University of Hong Kong

24. 胡凱歌.; Hu, Kaige. Optically-injected spin current and its scattering effect in semiconductor quantum wells.

Degree: M. Phil., 2007, University of Hong Kong

abstract

published_or_final_version

Physics

Master

Master of Philosophy

Advisors/Committee Members: Shen, S.

Subjects/Keywords: Spintronics.; Quantum wells

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APA (6th Edition):

胡凱歌.; Hu, K. (2007). Optically-injected spin current and its scattering effect in semiconductor quantum wells. (Masters Thesis). University of Hong Kong. Retrieved from Hu, K. [胡凱歌]. (2007). Optically-injected spin current and its scattering effect in semiconductor quantum wells. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3955757 ; http://dx.doi.org/10.5353/th_b3955757 ; http://hdl.handle.net/10722/52378

Chicago Manual of Style (16th Edition):

胡凱歌.; Hu, Kaige. “Optically-injected spin current and its scattering effect in semiconductor quantum wells.” 2007. Masters Thesis, University of Hong Kong. Accessed January 19, 2020. Hu, K. [胡凱歌]. (2007). Optically-injected spin current and its scattering effect in semiconductor quantum wells. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3955757 ; http://dx.doi.org/10.5353/th_b3955757 ; http://hdl.handle.net/10722/52378.

MLA Handbook (7th Edition):

胡凱歌.; Hu, Kaige. “Optically-injected spin current and its scattering effect in semiconductor quantum wells.” 2007. Web. 19 Jan 2020.

Vancouver:

胡凱歌.; Hu K. Optically-injected spin current and its scattering effect in semiconductor quantum wells. [Internet] [Masters thesis]. University of Hong Kong; 2007. [cited 2020 Jan 19]. Available from: Hu, K. [胡凱歌]. (2007). Optically-injected spin current and its scattering effect in semiconductor quantum wells. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3955757 ; http://dx.doi.org/10.5353/th_b3955757 ; http://hdl.handle.net/10722/52378.

Council of Science Editors:

胡凱歌.; Hu K. Optically-injected spin current and its scattering effect in semiconductor quantum wells. [Masters Thesis]. University of Hong Kong; 2007. Available from: Hu, K. [胡凱歌]. (2007). Optically-injected spin current and its scattering effect in semiconductor quantum wells. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3955757 ; http://dx.doi.org/10.5353/th_b3955757 ; http://hdl.handle.net/10722/52378


University of Hong Kong

25. Bao, Wei. Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars.

Degree: M. Phil., 2012, University of Hong Kong

In this thesis, the carrier localization effect, the quantum confinement Stark effect (QCSE) and nonlinear optical properties of the as-grown InGaN/GaN multiple-quantum-wells (MQWs) structure and… (more)

Subjects/Keywords: Gallium nitride - Optical properties.; Quantum wells.; Photoluminescence.

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APA (6th Edition):

Bao, W. (2012). Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. (Masters Thesis). University of Hong Kong. Retrieved from Bao, W. [包伟]. (2012). Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5060580 ; http://dx.doi.org/10.5353/th_b5060580 ; http://hdl.handle.net/10722/188753

Chicago Manual of Style (16th Edition):

Bao, Wei. “Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars.” 2012. Masters Thesis, University of Hong Kong. Accessed January 19, 2020. Bao, W. [包伟]. (2012). Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5060580 ; http://dx.doi.org/10.5353/th_b5060580 ; http://hdl.handle.net/10722/188753.

MLA Handbook (7th Edition):

Bao, Wei. “Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars.” 2012. Web. 19 Jan 2020.

Vancouver:

Bao W. Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. [Internet] [Masters thesis]. University of Hong Kong; 2012. [cited 2020 Jan 19]. Available from: Bao, W. [包伟]. (2012). Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5060580 ; http://dx.doi.org/10.5353/th_b5060580 ; http://hdl.handle.net/10722/188753.

Council of Science Editors:

Bao W. Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. [Masters Thesis]. University of Hong Kong; 2012. Available from: Bao, W. [包伟]. (2012). Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5060580 ; http://dx.doi.org/10.5353/th_b5060580 ; http://hdl.handle.net/10722/188753


University of Oregon

26. Baldwin, Thomas. Trion-based Optical Processes in Semiconductor Quantum Wells.

Degree: 2016, University of Oregon

 In a semiconductor, negative charge is carried by conduction-band electrons and positive charge is carried by valence-band holes. While charge transport properties can be understood… (more)

Subjects/Keywords: Excitons; Gallium arsenide; Quantum wells; Trions

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APA (6th Edition):

Baldwin, T. (2016). Trion-based Optical Processes in Semiconductor Quantum Wells. (Thesis). University of Oregon. Retrieved from http://hdl.handle.net/1794/19728

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Baldwin, Thomas. “Trion-based Optical Processes in Semiconductor Quantum Wells.” 2016. Thesis, University of Oregon. Accessed January 19, 2020. http://hdl.handle.net/1794/19728.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Baldwin, Thomas. “Trion-based Optical Processes in Semiconductor Quantum Wells.” 2016. Web. 19 Jan 2020.

Vancouver:

Baldwin T. Trion-based Optical Processes in Semiconductor Quantum Wells. [Internet] [Thesis]. University of Oregon; 2016. [cited 2020 Jan 19]. Available from: http://hdl.handle.net/1794/19728.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Baldwin T. Trion-based Optical Processes in Semiconductor Quantum Wells. [Thesis]. University of Oregon; 2016. Available from: http://hdl.handle.net/1794/19728

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Oklahoma

27. Gaspe, Chomani Kishanika. Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb.

Degree: PhD, 2013, University of Oklahoma

 An experimental study of growth, structural and electronic properties of elemental Sb QWs with GaSb barriers was performed to explore their potential as topological insulators.… (more)

Subjects/Keywords: Molecular beam epitaxy; Quantum wells; Electron transport

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APA (6th Edition):

Gaspe, C. K. (2013). Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb. (Doctoral Dissertation). University of Oklahoma. Retrieved from http://hdl.handle.net/11244/318770

Chicago Manual of Style (16th Edition):

Gaspe, Chomani Kishanika. “Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb.” 2013. Doctoral Dissertation, University of Oklahoma. Accessed January 19, 2020. http://hdl.handle.net/11244/318770.

MLA Handbook (7th Edition):

Gaspe, Chomani Kishanika. “Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb.” 2013. Web. 19 Jan 2020.

Vancouver:

Gaspe CK. Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb. [Internet] [Doctoral dissertation]. University of Oklahoma; 2013. [cited 2020 Jan 19]. Available from: http://hdl.handle.net/11244/318770.

Council of Science Editors:

Gaspe CK. Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb. [Doctoral Dissertation]. University of Oklahoma; 2013. Available from: http://hdl.handle.net/11244/318770

28. Banks, Hunter. Electron-Hole Recollisions in Driven Quantum Wells.

Degree: 2016, University of California – eScholarship, University of California

 Driving semiconductor quantum wells with terahertz electric fields strong enough to overcome the Coulomb attraction between bound electron-hole pairs leads to high-order sideband generation (HSG).… (more)

Subjects/Keywords: Physics; Nonlinear optics; Quantum wells; Terahertz

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APA (6th Edition):

Banks, H. (2016). Electron-Hole Recollisions in Driven Quantum Wells. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/69c6m3zk

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Banks, Hunter. “Electron-Hole Recollisions in Driven Quantum Wells.” 2016. Thesis, University of California – eScholarship, University of California. Accessed January 19, 2020. http://www.escholarship.org/uc/item/69c6m3zk.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Banks, Hunter. “Electron-Hole Recollisions in Driven Quantum Wells.” 2016. Web. 19 Jan 2020.

Vancouver:

Banks H. Electron-Hole Recollisions in Driven Quantum Wells. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2020 Jan 19]. Available from: http://www.escholarship.org/uc/item/69c6m3zk.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Banks H. Electron-Hole Recollisions in Driven Quantum Wells. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/69c6m3zk

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rutgers University

29. Tskipuri, Levan, 1978-. Metallic quantum well states and chemisorption:.

Degree: PhD, Physics and Astronomy, 2009, Rutgers University

In this thesis the adsorption properties of carbon monoxide (CO) on the epitaxial fcc-Co/Cu(100), Ni/Cu (100) and Cu/fcc-Fe/Cu(100) systems are reported. The fcc-Co/Cu(100), Ni/Cu(100) systems… (more)

Subjects/Keywords: Quantum wells; Chemisorption

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APA (6th Edition):

Tskipuri, Levan, 1. (2009). Metallic quantum well states and chemisorption:. (Doctoral Dissertation). Rutgers University. Retrieved from http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051915

Chicago Manual of Style (16th Edition):

Tskipuri, Levan, 1978-. “Metallic quantum well states and chemisorption:.” 2009. Doctoral Dissertation, Rutgers University. Accessed January 19, 2020. http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051915.

MLA Handbook (7th Edition):

Tskipuri, Levan, 1978-. “Metallic quantum well states and chemisorption:.” 2009. Web. 19 Jan 2020.

Vancouver:

Tskipuri, Levan 1. Metallic quantum well states and chemisorption:. [Internet] [Doctoral dissertation]. Rutgers University; 2009. [cited 2020 Jan 19]. Available from: http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051915.

Council of Science Editors:

Tskipuri, Levan 1. Metallic quantum well states and chemisorption:. [Doctoral Dissertation]. Rutgers University; 2009. Available from: http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051915


University of Florida

30. Xie, Suning, 1961-. Integration of a GaAs/AlGaAs SQW laser and a tapered waveguide coupler.

Degree: PhD, Electrical and Computer Engineering, 1996, University of Florida

Subjects/Keywords: Current density; Diffusion coefficient; Electrons; Lasers; Lasing; Light refraction; Quantum wells; Reflectance; Threshold currents; Waveguides; Integrated optics; Optical wave guides; Quantum wells; Semiconductor lasers

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Xie, Suning, 1. (1996). Integration of a GaAs/AlGaAs SQW laser and a tapered waveguide coupler. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/AA00037137

Chicago Manual of Style (16th Edition):

Xie, Suning, 1961-. “Integration of a GaAs/AlGaAs SQW laser and a tapered waveguide coupler.” 1996. Doctoral Dissertation, University of Florida. Accessed January 19, 2020. http://ufdc.ufl.edu/AA00037137.

MLA Handbook (7th Edition):

Xie, Suning, 1961-. “Integration of a GaAs/AlGaAs SQW laser and a tapered waveguide coupler.” 1996. Web. 19 Jan 2020.

Vancouver:

Xie, Suning 1. Integration of a GaAs/AlGaAs SQW laser and a tapered waveguide coupler. [Internet] [Doctoral dissertation]. University of Florida; 1996. [cited 2020 Jan 19]. Available from: http://ufdc.ufl.edu/AA00037137.

Council of Science Editors:

Xie, Suning 1. Integration of a GaAs/AlGaAs SQW laser and a tapered waveguide coupler. [Doctoral Dissertation]. University of Florida; 1996. Available from: http://ufdc.ufl.edu/AA00037137

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