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You searched for subject:(dysprosium oxide). Showing records 1 – 3 of 3 total matches.

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Vanderbilt University

1. Chen, Dakai. Total dose irradiation effects on silicon and germanium MOS capacitors with alternative gate dielectrics.

Degree: MS, Electrical Engineering, 2007, Vanderbilt University

Alternative dielectrics are rapidly becoming necessary for the future of Metal-Oxide-Semiconductor (MOS) devices, as SiO2-based technology reaches scaling limits. In this thesis, the total ionizing dose irradiation effects on Si and Ge MOS capacitors with Hf-based gate dielectrics are investigated. The radiation response of the HfO2/Dy2O3 on Ge MOS devices exhibited no change in the capacitance-voltage characteristics. HfO2 has the tendency to trap large amounts of electrons relative to SiO2. However the high gate leakage current likely efficiently neutralized any radiation-induced charge build-up for these devices. We have also examined the radiation response and bias-temperature effects of Si MOS devices with HfSiON gate dielectrics. The results showed much improved radiation hardness relative to earlier Hf silicate devices (net oxide-trapped charge density ~ 16Ã less). The low-Si3N4 content film also displayed enhanced charge trapping relative to the high-Si3N4 content film. In addition, the HfSiON devices showed much reduced degradation from bias-temperature stress relative to SiO2 and HfO2 devices. However the improved bias-temperature stability likely results from difference in processing techniques, and comes at the cost of high density of process-induced interface traps. The material properties and processing techniques can significantly influence the reliability and radiation response of high-k MOS devices. The work in this thesis provides insights to the reliability and radiation degradation that are essential to the development of Hf-based MOS devices. Advisors/Committee Members: Dan Fleetwood (chair), Ron Schrimpf (chair).

Subjects/Keywords: Metal oxide semiconductors  – Effect of radiation on; dysprosium; high-k; radiation; total dose; MOS; Hafnium; Dielectric devices  – Testing; Germanium

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, D. (2007). Total dose irradiation effects on silicon and germanium MOS capacitors with alternative gate dielectrics. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-10082007-222617/ ;

Chicago Manual of Style (16th Edition):

Chen, Dakai. “Total dose irradiation effects on silicon and germanium MOS capacitors with alternative gate dielectrics.” 2007. Masters Thesis, Vanderbilt University. Accessed August 14, 2020. http://etd.library.vanderbilt.edu/available/etd-10082007-222617/ ;.

MLA Handbook (7th Edition):

Chen, Dakai. “Total dose irradiation effects on silicon and germanium MOS capacitors with alternative gate dielectrics.” 2007. Web. 14 Aug 2020.

Vancouver:

Chen D. Total dose irradiation effects on silicon and germanium MOS capacitors with alternative gate dielectrics. [Internet] [Masters thesis]. Vanderbilt University; 2007. [cited 2020 Aug 14]. Available from: http://etd.library.vanderbilt.edu/available/etd-10082007-222617/ ;.

Council of Science Editors:

Chen D. Total dose irradiation effects on silicon and germanium MOS capacitors with alternative gate dielectrics. [Masters Thesis]. Vanderbilt University; 2007. Available from: http://etd.library.vanderbilt.edu/available/etd-10082007-222617/ ;

2. Shahinur, Rahman. Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates.

Degree: 2009, University of Ioannina; Πανεπιστήμιο Ιωαννίνων

Germanium as a replacement for Silicon in metal-oxide-semiconductor (MOS) devices, offers a higher electron (2x) and hole (4x) mobility than silicon. A Ge channel MOS technology has been expected to be implemented into future high-speed Si platform, because of the enhanced carrier transport. The critical performance characteristics of (MOS) capacitors and transistors are determined by the interface between the high-κ materials and Ge. The poor quality of the native oxide (GeO2) however hampered the use of this material in large scale production. One potential solution is the use of Rare-earth oxides (REOs) such as CeO2, La2O3, Dy2O3, Gd2O3, which can be directly deposited on Germanium substrates. They form strongly interacting interfaces, producing spontaneously (during deposition) an interfacial layer which contains oxidized Ge with improved electrical characteristics. The reliability characteristics of these MOS devices on Germanium substrates are of important concerns and the main subject of the present work. Charge trapping is a major reliability concern in most of the high-k material devices. During high field injection of electrons into the oxide layer, microscopic defects like neutral electron traps, and interface states are generated in the dielectric/semiconductor system. The neutral electron traps generated during high field stress can act as a stepping stone for the injected electron at a low voltage, giving rise to a stress-induced leakage current (SILC). The increased importance of the stress-induced leakage current (SILC) in ULSI low-power and non-volatile memory applications has long been recognized. SILC has been described by a process of trap-assisted tunneling through stress generated oxide traps in Si/SiO2 MOS devices. The experimental measurement of the trap energy distribution represents therefore a primary concern in order to quantitatively understand the SILC process. Although the transient SILC current has been shown to provide useful information about the oxide trap distribution, a careful analysis of the transient processes, is still lacking. Another important issue is current instabilities due to charge accumulation at the interface of any two dielectrics, that is, gate stack bilayer itself causes charge trapping, sometimes also demonstrate dielectric relaxation, and these combined effects are termed Maxwell-Wagner - Instabilities. The present work comprises of six (6) chapters, chapter 1 dealing with the theoretical background and chapter # 2 with the Experimental part. In chapter # 3 the effects of charge trapping, SILC, and border traps in CeO2 films grown on Ge substrates are investigated, where the subsequent analysis proves that charge trapping characteristics and SILC show voltage dependence behaviour. It is also shown that at low stress field charge trapping is the dominant mechanism while at higher stress field SILC prevails over charge trapping characteristics. Both mechanisms can be explained by a model, which was originally developed for the Si/SiO2 system. We also develop a…

Subjects/Keywords: MOS αξιοπιστία διατάξεων; Ηλεκτρική καταπόνηση; Διατάξεις MOS; Οξείδια σπανίων γαιών; Οξείδιο δημητρίου; Οξείδιο αφνίου; Οξείδιο δυσπροσίου; Ηλεκτρικός χαρακτηρισμός; MOS device reliability; Electrical stress; MOS devices; Rare earth oxides; Cerium oxide (CeO2); Hafnium oxide; Dysprosium oxide; Electrical characterization

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Shahinur, R. (2009). Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates. (Thesis). University of Ioannina; Πανεπιστήμιο Ιωαννίνων. Retrieved from http://hdl.handle.net/10442/hedi/18141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Shahinur, Rahman. “Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates.” 2009. Thesis, University of Ioannina; Πανεπιστήμιο Ιωαννίνων. Accessed August 14, 2020. http://hdl.handle.net/10442/hedi/18141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Shahinur, Rahman. “Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates.” 2009. Web. 14 Aug 2020.

Vancouver:

Shahinur R. Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates. [Internet] [Thesis]. University of Ioannina; Πανεπιστήμιο Ιωαννίνων; 2009. [cited 2020 Aug 14]. Available from: http://hdl.handle.net/10442/hedi/18141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Shahinur R. Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates. [Thesis]. University of Ioannina; Πανεπιστήμιο Ιωαννίνων; 2009. Available from: http://hdl.handle.net/10442/hedi/18141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

3. Jur, Jesse Stephen. Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications.

Degree: PhD, Materials Science and Engineering, 2007, North Carolina State University

The ability to improve performance of the high-end metal oxide semiconductor field effect transistor (MOSFET) is highly reliant on the dimensional scaling of such a device. In scaling, a decrease in dielectric thickness results in high leakage current between the electrode and the substrate by way of direct tunneling through the gate dielectric. Observation of a high leakage current when the standard gate dielectric, SiO2, is decreased below a thickness of 1.5 nm requires engineering of a replacement dielectric that is much more scalable. This high- dielectric allows for a physically thicker oxide, reducing leakage current. Integration of select lanthanide-based oxides and silicates, in particular lanthanum oxide and silicate, into MOS gate stack devices is examined. The quality of the high-K dielectrics is monitored electrically to determine properties such as equivalent oxide thickness, leakage current density and defect densities. In addition, analytical characterization of the dielectric and the gate stack is provided to examine the materialistic significance to the change of the electrical properties of the devices. It is shown that optimization of low-temperature processing can result in MOS devices with an equivalent oxide thickness (EOT) as low 5 Å and a leakage current density of 5.0 A⁄cm2. High-temperature processing, consistent with a MOSFET source-drain activation anneal, yields MOS devices with an EOT as low as 1.1 nm after optimization of the TaN/W electrode properties. The decrease in the device effective work function (phi_M,eff) observed in these samples is examined in detail. First, as a La2O3 capping layer on HfSiO(N), the shift yields ideal-phi_M,eff values for nMOSFET deices (4.0 eV) that were previously inaccessible. Other lanthanide oxides (Dy, Ho and Yb) used as capping layers show similar effects. It is also shown that tuning of phi_M,eff can be realized by controlling the extent of lanthanide-silicate formation. This research, conducted in conjunction with SEMATECH and the SRC, represents a significant technological advancement in realizing 45 and sub-45 nm MOSFET device nodes. Advisors/Committee Members: Angus Kingon, Committee Chair (advisor), Gregory Parsons, Committee Member (advisor), Jon-Paul Maria, Committee Member (advisor), Mark Johnson, Committee Member (advisor).

Subjects/Keywords: dc magnetron sputtering; physical vapor deposition; tungsten oxide; tungsten; W; tantalum nitride; TaN; lanthanum; lanthanum oxide; La; La2O3; La2SiO5; lanthanum silicate; La2Si2O7; Ho; holmium; holmium oxide; cation diffusion; back-side SIMS; secondary ion mass spectroscopy; SIMS; XRD; x-ray diffraction; molecular beam deposition; PMA; XPS; x-ray photoemission spectroscopy; post metallization anneal; RCA; chemical oxide; metal oxide semiconductor field effect transistor; MBE; silica; SiO2; interfacial layer; gate dielectric; dielectric; silicate; oxide; high-kappa; EOT; equivalent oxide thickness; high-k; band diagram; valance band offset; conduction band offset; band gap energy; effective work function; work function; voltage shift; threshold voltage; flat band voltage; leakage current; capacitance; mobility; electronic materials; scaling; Moore?s Law; MIS; MOS; MOSFET; high resolution transmission electron microscopy; HRTEM; RTA; rapid thermal anneal; PVD; tantalum; Ta; gate electrode; metal electrode; hafnium silicate; hafnium oxide; hafnium; ytterbium; ytterbium oxide; Yb; dysprosium oxide; dysprosium; Dy; E-beam evaporation; thermal evaporation; forming gas anneal; ozone; ammonia anneal; FGA

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jur, J. S. (2007). Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5447

Chicago Manual of Style (16th Edition):

Jur, Jesse Stephen. “Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications.” 2007. Doctoral Dissertation, North Carolina State University. Accessed August 14, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5447.

MLA Handbook (7th Edition):

Jur, Jesse Stephen. “Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications.” 2007. Web. 14 Aug 2020.

Vancouver:

Jur JS. Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications. [Internet] [Doctoral dissertation]. North Carolina State University; 2007. [cited 2020 Aug 14]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5447.

Council of Science Editors:

Jur JS. Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications. [Doctoral Dissertation]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5447

.