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Virginia Tech
1. Watt, Grace R. Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module.
Degree: MS, Electrical Engineering, 2020, Virginia Tech
URL: http://hdl.handle.net/10919/96559
Subjects/Keywords: SiC MOSFET; power module packaging; flexible PCB; current sharing; symmetrical direct bonded copper (DBC) layout; diode-less module; multi-chip module; device parametric tolerances; package parasitics; vertical GaN
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APA (6th Edition):
Watt, G. R. (2020). Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/96559
Chicago Manual of Style (16th Edition):
Watt, Grace R. “Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module.” 2020. Masters Thesis, Virginia Tech. Accessed February 26, 2021. http://hdl.handle.net/10919/96559.
MLA Handbook (7th Edition):
Watt, Grace R. “Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module.” 2020. Web. 26 Feb 2021.
Vancouver:
Watt GR. Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module. [Internet] [Masters thesis]. Virginia Tech; 2020. [cited 2021 Feb 26]. Available from: http://hdl.handle.net/10919/96559.
Council of Science Editors:
Watt GR. Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module. [Masters Thesis]. Virginia Tech; 2020. Available from: http://hdl.handle.net/10919/96559