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You searched for subject:(corners process). Showing records 1 – 3 of 3 total matches.

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1. Lemoigne, Pascal. Simulation de la variabilité du transistor MOS : Advanced modeling of two phase turbulent combustion with strong dilution by burnt gases.

Degree: Docteur es, Micro et nanoélectronique, 2011, Aix-Marseille 1

L’augmentation de la densité d’intégration des circuits intégrés nous a amené à étudier, dans le cadre du développement de la technologie CMOS 45 nm, les sources de variabilité inhérentes aux procédés de fabrication utilisés pour ce nœud technologique, et à en déterminer les composantes principales,dans le but ultime de permettre la simulation précise de l’impact de la variabilité technologique à la fois au niveau transistor et circuit. Après un état de l’art des sources de variabilité du transistor MOS et des moyens de simulation associés,ce travail s'est orienté sur les fluctuations d'un facteur technologique difficilement accessible à la mesure statistique qu'est le dopage canal. Ensuite le nœud 45 nm a été étudié expérimentalement via un plan d'expériences.Ceci a permis de connaitre les variations naturelles des facteurs technologiques mais surtout les sensibilités des performances électriques vis-à-vis de ces facteurs.Nous avons pu ainsi identifier les causes prépondérantes de variabilité dues au procédé.Enfin, nous proposons d’améliorer la prise en compte des déviations des facteurs process dans les simulations Monte-Carlo et pire-cas appliquées aux modèles compacts au regard de ces observations expérimentales.

Continuous improvement in integrated circuits density of integration lead us to study process-induced variations in the framework of the 45 nm node, and to determine their principal contributions with the ultimate goal being to allow an accurate simulation of both transistor and circuit level variability. This work starts with a study of the state of the art of variability sources of the MOS transistor and associated simulation means. Then it focuses on the fluctuations of the channel doping, which is a difficult factor to measure statistically.After that we study the 45 nm node through a design of experiment which let us learn about natural variations of process factors but mostly about electrical performances sensitivity to those factors.Thanks to that we could identify major causes of process-induced variability at this stage of this node development. At last, with respect to those experimental results, we propose to enhance the taking in account of process variations in Monte-Carlo and corner simulations applied to compact models.

Advisors/Committee Members: Zaïd, Lakhdar (thesis director).

Subjects/Keywords: Mosfet; Variabilité; Procédé; Plan d'expériences; Dopage canal; Simulation; Tcad; Spice; Monte-Carlo; Pire-cas; Mosfet; Variability; Process; Design of experiment; Channel doping; Simulation; Tcad; Spice; Monte-Carlo; Corners

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APA (6th Edition):

Lemoigne, P. (2011). Simulation de la variabilité du transistor MOS : Advanced modeling of two phase turbulent combustion with strong dilution by burnt gases. (Doctoral Dissertation). Aix-Marseille 1. Retrieved from http://www.theses.fr/2011AIX10214

Chicago Manual of Style (16th Edition):

Lemoigne, Pascal. “Simulation de la variabilité du transistor MOS : Advanced modeling of two phase turbulent combustion with strong dilution by burnt gases.” 2011. Doctoral Dissertation, Aix-Marseille 1. Accessed July 16, 2020. http://www.theses.fr/2011AIX10214.

MLA Handbook (7th Edition):

Lemoigne, Pascal. “Simulation de la variabilité du transistor MOS : Advanced modeling of two phase turbulent combustion with strong dilution by burnt gases.” 2011. Web. 16 Jul 2020.

Vancouver:

Lemoigne P. Simulation de la variabilité du transistor MOS : Advanced modeling of two phase turbulent combustion with strong dilution by burnt gases. [Internet] [Doctoral dissertation]. Aix-Marseille 1; 2011. [cited 2020 Jul 16]. Available from: http://www.theses.fr/2011AIX10214.

Council of Science Editors:

Lemoigne P. Simulation de la variabilité du transistor MOS : Advanced modeling of two phase turbulent combustion with strong dilution by burnt gases. [Doctoral Dissertation]. Aix-Marseille 1; 2011. Available from: http://www.theses.fr/2011AIX10214

2. Johnson, Tobias Lee. Eigenvalue fluctuations for random regular graphs.

Degree: PhD, 2014, University of Washington

One of the major themes of random matrix theory is that many asymptotic properties of traditionally studied distributions of random matrices are universal. We probe the edges of universality by studying the spectral properties of random regular graphs. Specifically, we prove limit theorems for the fluctuations of linear spectral statistics of random regular graphs. We find both universal and non-universal behavior. Our most important tool is Stein's method for Poisson approximation, which we develop for use on random regular graphs. Advisors/Committee Members: Dumitriu, Ioana (advisor).

Subjects/Keywords: corners process; eigenvalue fluctuations; minors process; Poisson approximation; random regular graphs; Stein's method; Mathematics; mathematics

…This is analogous to a corners process in random matrix theory; see [BG13] for a… …In Chapter 4, we consider a process of growing random regular graphs. The eigenvalue… …fluctuations are then a stochastic process whose marginals are given by the results of Chapter 3… …its cycle. The stochastic process that grows π (n) from π (n−1) by… …sequentially inserting an element n randomly is called the Chinese Restaurant Process. We give a… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Johnson, T. L. (2014). Eigenvalue fluctuations for random regular graphs. (Doctoral Dissertation). University of Washington. Retrieved from http://hdl.handle.net/1773/26531

Chicago Manual of Style (16th Edition):

Johnson, Tobias Lee. “Eigenvalue fluctuations for random regular graphs.” 2014. Doctoral Dissertation, University of Washington. Accessed July 16, 2020. http://hdl.handle.net/1773/26531.

MLA Handbook (7th Edition):

Johnson, Tobias Lee. “Eigenvalue fluctuations for random regular graphs.” 2014. Web. 16 Jul 2020.

Vancouver:

Johnson TL. Eigenvalue fluctuations for random regular graphs. [Internet] [Doctoral dissertation]. University of Washington; 2014. [cited 2020 Jul 16]. Available from: http://hdl.handle.net/1773/26531.

Council of Science Editors:

Johnson TL. Eigenvalue fluctuations for random regular graphs. [Doctoral Dissertation]. University of Washington; 2014. Available from: http://hdl.handle.net/1773/26531


Brno University of Technology

3. Lang, Radek. Vysokofrekvenční oscilátor v technologii CMOS: High-frequency oscillator in CMOS technology.

Degree: 2019, Brno University of Technology

This project focus to desing an on-chip oscillator in function as a clock generator. Frequency stability of the oscillator is affected by supply voltage, temperature and process variations. The aim is to propose a clock generator with sufficient frequency stability, low power consumption and a small chip area. This work deals with the types of oscillators and their basic building blocks suitable for our application. It also deals with the study and design options of temperature and process compensation circuit generating the current control, which provides the frequency stabilization of the output signal. Advisors/Committee Members: Prokop, Roman (advisor), Musil, Vladislav (referee).

Subjects/Keywords: Kruhový oscilátor; Diferenciální kruhový oscilátor; VCO; CMOS 0.25 µm; CMOS 0.18 µm; Generátor hodinového signálu; Teplotní kompenzace; Procesní kompenzace; Procesní odchylky; Integrovaný obvod; Ring oscillator; Current-starved; Differential ring oscillator; VCO; CMOS 0.25 µm; CMOS 0.18 µm; Clock generator; Temperature compensation; Process compensation; Process corners; Integrated circuit

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lang, R. (2019). Vysokofrekvenční oscilátor v technologii CMOS: High-frequency oscillator in CMOS technology. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/40257

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lang, Radek. “Vysokofrekvenční oscilátor v technologii CMOS: High-frequency oscillator in CMOS technology.” 2019. Thesis, Brno University of Technology. Accessed July 16, 2020. http://hdl.handle.net/11012/40257.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lang, Radek. “Vysokofrekvenční oscilátor v technologii CMOS: High-frequency oscillator in CMOS technology.” 2019. Web. 16 Jul 2020.

Vancouver:

Lang R. Vysokofrekvenční oscilátor v technologii CMOS: High-frequency oscillator in CMOS technology. [Internet] [Thesis]. Brno University of Technology; 2019. [cited 2020 Jul 16]. Available from: http://hdl.handle.net/11012/40257.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lang R. Vysokofrekvenční oscilátor v technologii CMOS: High-frequency oscillator in CMOS technology. [Thesis]. Brno University of Technology; 2019. Available from: http://hdl.handle.net/11012/40257

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.