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You searched for subject:(Wide Bandgap). Showing records 1 – 30 of 67 total matches.

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Virginia Tech

1. Wei, Yu. A Novel Auxiliary Resonant Snubber Inverter Using Wide Bandgap Devices.

Degree: MS, Electrical Engineering, 2018, Virginia Tech

 In the application of power inverters, power density has become a key design specification where it has stringent requirements on system size and weight. Achieving… (more)

Subjects/Keywords: soft-switching; wide bandgap; DC-AC; inverter

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APA (6th Edition):

Wei, Y. (2018). A Novel Auxiliary Resonant Snubber Inverter Using Wide Bandgap Devices. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/83238

Chicago Manual of Style (16th Edition):

Wei, Yu. “A Novel Auxiliary Resonant Snubber Inverter Using Wide Bandgap Devices.” 2018. Masters Thesis, Virginia Tech. Accessed October 17, 2019. http://hdl.handle.net/10919/83238.

MLA Handbook (7th Edition):

Wei, Yu. “A Novel Auxiliary Resonant Snubber Inverter Using Wide Bandgap Devices.” 2018. Web. 17 Oct 2019.

Vancouver:

Wei Y. A Novel Auxiliary Resonant Snubber Inverter Using Wide Bandgap Devices. [Internet] [Masters thesis]. Virginia Tech; 2018. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/10919/83238.

Council of Science Editors:

Wei Y. A Novel Auxiliary Resonant Snubber Inverter Using Wide Bandgap Devices. [Masters Thesis]. Virginia Tech; 2018. Available from: http://hdl.handle.net/10919/83238


Texas A&M University

2. Rezanezhad Gatabi, Iman. Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications.

Degree: 2013, Texas A&M University

 GaN RF switches are widely used in today?s communication systems. With digital communications getting more and more popular nowadays, the need for improving the performance… (more)

Subjects/Keywords: Gallium Nitride; Semiconductor Devices; Tunneling; Radio Frequency; Wide Bandgap Semiconductors

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APA (6th Edition):

Rezanezhad Gatabi, I. (2013). Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications. (Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/151047

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rezanezhad Gatabi, Iman. “Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications.” 2013. Thesis, Texas A&M University. Accessed October 17, 2019. http://hdl.handle.net/1969.1/151047.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rezanezhad Gatabi, Iman. “Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications.” 2013. Web. 17 Oct 2019.

Vancouver:

Rezanezhad Gatabi I. Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications. [Internet] [Thesis]. Texas A&M University; 2013. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/1969.1/151047.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rezanezhad Gatabi I. Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications. [Thesis]. Texas A&M University; 2013. Available from: http://hdl.handle.net/1969.1/151047

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

3. Manning, Ian. Evolution of stress and microstructure in Si-doped aluminum gallium nitride thin films.

Degree: PhD, Materials Science and Engineering, 2010, Penn State University

 AlxGa1-xN thin films are foreseen to be of central importance to photoemitters and detectors operating within the ultraviolet spectral range, due to the range of… (more)

Subjects/Keywords: OMVPE; wide bandgap semiconductors; doping; strain; stress; thin films; MOCVD; AlGaN

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APA (6th Edition):

Manning, I. (2010). Evolution of stress and microstructure in Si-doped aluminum gallium nitride thin films. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/11647

Chicago Manual of Style (16th Edition):

Manning, Ian. “Evolution of stress and microstructure in Si-doped aluminum gallium nitride thin films.” 2010. Doctoral Dissertation, Penn State University. Accessed October 17, 2019. https://etda.libraries.psu.edu/catalog/11647.

MLA Handbook (7th Edition):

Manning, Ian. “Evolution of stress and microstructure in Si-doped aluminum gallium nitride thin films.” 2010. Web. 17 Oct 2019.

Vancouver:

Manning I. Evolution of stress and microstructure in Si-doped aluminum gallium nitride thin films. [Internet] [Doctoral dissertation]. Penn State University; 2010. [cited 2019 Oct 17]. Available from: https://etda.libraries.psu.edu/catalog/11647.

Council of Science Editors:

Manning I. Evolution of stress and microstructure in Si-doped aluminum gallium nitride thin films. [Doctoral Dissertation]. Penn State University; 2010. Available from: https://etda.libraries.psu.edu/catalog/11647


Carnegie Mellon University

4. Yao, Yao. Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers.

Degree: 2017, Carnegie Mellon University

 Gallium Oxide (Ga2O3) has emerged over the last decade as a new up-and-coming alternative to traditional wide bandgap semiconductors. It exists as five polymorphs (α-,… (more)

Subjects/Keywords: epitaxial growth; gallium oxide; ohmic contact; schottky contact; semiconductor; wide bandgap

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APA (6th Edition):

Yao, Y. (2017). Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers. (Thesis). Carnegie Mellon University. Retrieved from http://repository.cmu.edu/dissertations/921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yao, Yao. “Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers.” 2017. Thesis, Carnegie Mellon University. Accessed October 17, 2019. http://repository.cmu.edu/dissertations/921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yao, Yao. “Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers.” 2017. Web. 17 Oct 2019.

Vancouver:

Yao Y. Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers. [Internet] [Thesis]. Carnegie Mellon University; 2017. [cited 2019 Oct 17]. Available from: http://repository.cmu.edu/dissertations/921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yao Y. Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers. [Thesis]. Carnegie Mellon University; 2017. Available from: http://repository.cmu.edu/dissertations/921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Minnesota

5. Hwang, Sehyun. Growth and Characterization of Wide Bandgap CIAGS Solar Cell Material and Devices.

Degree: PhD, Electrical/Computer Engineering, 2018, University of Minnesota

 In this study, we present the development of copper-indium-aluminum-gallium-selenium (Cu(In1-x-yAlyGax)Se2, or CIAGS) as a wide bandgap top cell absorber for tandem photovoltaic (PV) applications. Realizing… (more)

Subjects/Keywords: Chalcopyrite; Device; Photovoltaic; Solar cell; Thin film; Wide bandgap

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APA (6th Edition):

Hwang, S. (2018). Growth and Characterization of Wide Bandgap CIAGS Solar Cell Material and Devices. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/202189

Chicago Manual of Style (16th Edition):

Hwang, Sehyun. “Growth and Characterization of Wide Bandgap CIAGS Solar Cell Material and Devices.” 2018. Doctoral Dissertation, University of Minnesota. Accessed October 17, 2019. http://hdl.handle.net/11299/202189.

MLA Handbook (7th Edition):

Hwang, Sehyun. “Growth and Characterization of Wide Bandgap CIAGS Solar Cell Material and Devices.” 2018. Web. 17 Oct 2019.

Vancouver:

Hwang S. Growth and Characterization of Wide Bandgap CIAGS Solar Cell Material and Devices. [Internet] [Doctoral dissertation]. University of Minnesota; 2018. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/11299/202189.

Council of Science Editors:

Hwang S. Growth and Characterization of Wide Bandgap CIAGS Solar Cell Material and Devices. [Doctoral Dissertation]. University of Minnesota; 2018. Available from: http://hdl.handle.net/11299/202189


Kansas State University

6. Devarapally, Rahul Reddy. Survey of applications of WBG devices in power electronics.

Degree: MS, Department of Electrical and Computer Engineering, 2016, Kansas State University

Wide bandgap devices have gained increasing attention in the market of power electronics for their ability to perform even in harsh environments. The high voltage… (more)

Subjects/Keywords: Wide bandgap devices; Silicon Carbide; Gallium Nitride; Inverters; Application

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APA (6th Edition):

Devarapally, R. R. (2016). Survey of applications of WBG devices in power electronics. (Masters Thesis). Kansas State University. Retrieved from http://hdl.handle.net/2097/32665

Chicago Manual of Style (16th Edition):

Devarapally, Rahul Reddy. “Survey of applications of WBG devices in power electronics.” 2016. Masters Thesis, Kansas State University. Accessed October 17, 2019. http://hdl.handle.net/2097/32665.

MLA Handbook (7th Edition):

Devarapally, Rahul Reddy. “Survey of applications of WBG devices in power electronics.” 2016. Web. 17 Oct 2019.

Vancouver:

Devarapally RR. Survey of applications of WBG devices in power electronics. [Internet] [Masters thesis]. Kansas State University; 2016. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/2097/32665.

Council of Science Editors:

Devarapally RR. Survey of applications of WBG devices in power electronics. [Masters Thesis]. Kansas State University; 2016. Available from: http://hdl.handle.net/2097/32665


University of Missouri – Columbia

7. Montenegro, Daniel Enrique. Chemical sensor using single crystal diamond plates interrogated with charge-based deep-level transient spectroscopy based on the Quantum Fingerprint[TM] model: instrumentation and methodology.

Degree: 2011, University of Missouri – Columbia

 In recent years, diamond has received a great deal of interest as a potential chemical sensor material due to its mechanical robustness, and its capacity… (more)

Subjects/Keywords: wide-bandgap; adsorbates; surface termination; diamond; chemical sensors

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APA (6th Edition):

Montenegro, D. E. (2011). Chemical sensor using single crystal diamond plates interrogated with charge-based deep-level transient spectroscopy based on the Quantum Fingerprint[TM] model: instrumentation and methodology. (Thesis). University of Missouri – Columbia. Retrieved from http://hdl.handle.net/10355/14292

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Montenegro, Daniel Enrique. “Chemical sensor using single crystal diamond plates interrogated with charge-based deep-level transient spectroscopy based on the Quantum Fingerprint[TM] model: instrumentation and methodology.” 2011. Thesis, University of Missouri – Columbia. Accessed October 17, 2019. http://hdl.handle.net/10355/14292.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Montenegro, Daniel Enrique. “Chemical sensor using single crystal diamond plates interrogated with charge-based deep-level transient spectroscopy based on the Quantum Fingerprint[TM] model: instrumentation and methodology.” 2011. Web. 17 Oct 2019.

Vancouver:

Montenegro DE. Chemical sensor using single crystal diamond plates interrogated with charge-based deep-level transient spectroscopy based on the Quantum Fingerprint[TM] model: instrumentation and methodology. [Internet] [Thesis]. University of Missouri – Columbia; 2011. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/10355/14292.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Montenegro DE. Chemical sensor using single crystal diamond plates interrogated with charge-based deep-level transient spectroscopy based on the Quantum Fingerprint[TM] model: instrumentation and methodology. [Thesis]. University of Missouri – Columbia; 2011. Available from: http://hdl.handle.net/10355/14292

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

8. Liederbach, Ross Michael. Overview and development of a wide bandgap, high temperature circuit and measurement solution.

Degree: MS, Electrical & Computer Engr, 2016, University of Illinois – Urbana-Champaign

 This thesis takes a first step in investigating the design and feasibility of a high temperature power converter for various applications. From the dawn of… (more)

Subjects/Keywords: Wide Bandgap; High Temperature

…cooling loop. Operation across a wide range of ambient temperatures and conditions allows for… …Bandgap at 300 K (eV) Intrinsic concentration Critical field (Ec) Breakdown… …verification of operation across a wide range of temperatures due to characteristic changes in… …overview demonstrates the problem of CTE mismatch within a system that experiences a wide… …thermally manage a system across a wide temperature range, however choosing proper components… 

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APA (6th Edition):

Liederbach, R. M. (2016). Overview and development of a wide bandgap, high temperature circuit and measurement solution. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/92817

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liederbach, Ross Michael. “Overview and development of a wide bandgap, high temperature circuit and measurement solution.” 2016. Thesis, University of Illinois – Urbana-Champaign. Accessed October 17, 2019. http://hdl.handle.net/2142/92817.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liederbach, Ross Michael. “Overview and development of a wide bandgap, high temperature circuit and measurement solution.” 2016. Web. 17 Oct 2019.

Vancouver:

Liederbach RM. Overview and development of a wide bandgap, high temperature circuit and measurement solution. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2016. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/2142/92817.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liederbach RM. Overview and development of a wide bandgap, high temperature circuit and measurement solution. [Thesis]. University of Illinois – Urbana-Champaign; 2016. Available from: http://hdl.handle.net/2142/92817

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Tennessee – Knoxville

9. Sangid, Jordan Michael. GaN vs. Si for Class D Audio Applications.

Degree: MS, Electrical Engineering, 2018, University of Tennessee – Knoxville

 The demands and applications of modern power electronics are quickly moving past the maximum performance capabilities of Silicon devices. As the processing of Wide Bandgap(more)

Subjects/Keywords: WBG; Wide Bandgap; Audio; Audio Electronics; Class D; GaN

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APA (6th Edition):

Sangid, J. M. (2018). GaN vs. Si for Class D Audio Applications. (Thesis). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_gradthes/5357

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sangid, Jordan Michael. “GaN vs. Si for Class D Audio Applications.” 2018. Thesis, University of Tennessee – Knoxville. Accessed October 17, 2019. https://trace.tennessee.edu/utk_gradthes/5357.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sangid, Jordan Michael. “GaN vs. Si for Class D Audio Applications.” 2018. Web. 17 Oct 2019.

Vancouver:

Sangid JM. GaN vs. Si for Class D Audio Applications. [Internet] [Thesis]. University of Tennessee – Knoxville; 2018. [cited 2019 Oct 17]. Available from: https://trace.tennessee.edu/utk_gradthes/5357.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sangid JM. GaN vs. Si for Class D Audio Applications. [Thesis]. University of Tennessee – Knoxville; 2018. Available from: https://trace.tennessee.edu/utk_gradthes/5357

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

10. Katebi, Ramin. Advanced Silicon Carbide Based Fault-Tolerant Multilevel Converters.

Degree: 2019, Marquette University

 The number of safety-critical loads in electric power areas have been increasing drastically in the last two decades. These loads include the emerging more-electric aircraft… (more)

Subjects/Keywords: Fault Tolerant; Multilevel Converters; Silicon Carbide; Wide Bandgap; Engineering

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APA (6th Edition):

Katebi, R. (2019). Advanced Silicon Carbide Based Fault-Tolerant Multilevel Converters. (Thesis). Marquette University. Retrieved from https://epublications.marquette.edu/dissertations_mu/878

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Katebi, Ramin. “Advanced Silicon Carbide Based Fault-Tolerant Multilevel Converters.” 2019. Thesis, Marquette University. Accessed October 17, 2019. https://epublications.marquette.edu/dissertations_mu/878.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Katebi, Ramin. “Advanced Silicon Carbide Based Fault-Tolerant Multilevel Converters.” 2019. Web. 17 Oct 2019.

Vancouver:

Katebi R. Advanced Silicon Carbide Based Fault-Tolerant Multilevel Converters. [Internet] [Thesis]. Marquette University; 2019. [cited 2019 Oct 17]. Available from: https://epublications.marquette.edu/dissertations_mu/878.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Katebi R. Advanced Silicon Carbide Based Fault-Tolerant Multilevel Converters. [Thesis]. Marquette University; 2019. Available from: https://epublications.marquette.edu/dissertations_mu/878

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

11. Albadri, Mustafa Nameer. Simulation of SiC MOSFET Power Converters.

Degree: MS, Computer Science and Engineering, 2017, U of Denver

  This thesis discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter). Different… (more)

Subjects/Keywords: Buck Converter; Push-Pull; Silicon Carbide; Wide Bandgap; Electrical and Computer Engineering

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APA (6th Edition):

Albadri, M. N. (2017). Simulation of SiC MOSFET Power Converters. (Thesis). U of Denver. Retrieved from https://digitalcommons.du.edu/etd/1312

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Albadri, Mustafa Nameer. “Simulation of SiC MOSFET Power Converters.” 2017. Thesis, U of Denver. Accessed October 17, 2019. https://digitalcommons.du.edu/etd/1312.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Albadri, Mustafa Nameer. “Simulation of SiC MOSFET Power Converters.” 2017. Web. 17 Oct 2019.

Vancouver:

Albadri MN. Simulation of SiC MOSFET Power Converters. [Internet] [Thesis]. U of Denver; 2017. [cited 2019 Oct 17]. Available from: https://digitalcommons.du.edu/etd/1312.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Albadri MN. Simulation of SiC MOSFET Power Converters. [Thesis]. U of Denver; 2017. Available from: https://digitalcommons.du.edu/etd/1312

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

12. Hsu, Chun-Chi. Epitaxial growth of gallium oxide on AlN/sapphire substrate by chemical vapor deposition.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 Being a wide bandgap semiconductor material, gallium oxide (Ga2O3) has been prepared by many methods. In this study, gallium oxide was grown on AlN/sapphire single… (more)

Subjects/Keywords: Hall measurement; wide bandgap semiconductor; chemical vapor deposition; gallium oxide; aluminum nitride; sapphire

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APA (6th Edition):

Hsu, C. (2017). Epitaxial growth of gallium oxide on AlN/sapphire substrate by chemical vapor deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626117-123629

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsu, Chun-Chi. “Epitaxial growth of gallium oxide on AlN/sapphire substrate by chemical vapor deposition.” 2017. Thesis, NSYSU. Accessed October 17, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626117-123629.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsu, Chun-Chi. “Epitaxial growth of gallium oxide on AlN/sapphire substrate by chemical vapor deposition.” 2017. Web. 17 Oct 2019.

Vancouver:

Hsu C. Epitaxial growth of gallium oxide on AlN/sapphire substrate by chemical vapor deposition. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Oct 17]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626117-123629.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsu C. Epitaxial growth of gallium oxide on AlN/sapphire substrate by chemical vapor deposition. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626117-123629

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


EPFL

13. Gonschorek, Marcus. Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics.

Degree: 2011, EPFL

 AlInN is a material which is known to be difficult to be grown among the III-nitride ternary compounds. It attracted much attention only recently and… (more)

Subjects/Keywords: wide bandgap semiconductors; gallium nitride; aluminium indium nitride; electron gas; high electron mobility transistor

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APA (6th Edition):

Gonschorek, M. (2011). Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics. (Thesis). EPFL. Retrieved from http://infoscience.epfl.ch/record/174658

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gonschorek, Marcus. “Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics.” 2011. Thesis, EPFL. Accessed October 17, 2019. http://infoscience.epfl.ch/record/174658.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gonschorek, Marcus. “Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics.” 2011. Web. 17 Oct 2019.

Vancouver:

Gonschorek M. Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics. [Internet] [Thesis]. EPFL; 2011. [cited 2019 Oct 17]. Available from: http://infoscience.epfl.ch/record/174658.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gonschorek M. Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics. [Thesis]. EPFL; 2011. Available from: http://infoscience.epfl.ch/record/174658

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Sydney

14. Fernando, W. Anand K. Techniques for Designing HFAC Power Distribution Systems; Power Conversion and Distribution .

Degree: 2018, University of Sydney

 Modern power distribution systems (PDS) utilize multiple converters, making power flow undergo several conversions between source and the load. Use of high frequency AC (HFAC)… (more)

Subjects/Keywords: HFAC; high-speed switching; skin-effect; microgrid; wide-bandgap; bi-directional converter

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APA (6th Edition):

Fernando, W. A. K. (2018). Techniques for Designing HFAC Power Distribution Systems; Power Conversion and Distribution . (Thesis). University of Sydney. Retrieved from http://hdl.handle.net/2123/17995

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Fernando, W Anand K. “Techniques for Designing HFAC Power Distribution Systems; Power Conversion and Distribution .” 2018. Thesis, University of Sydney. Accessed October 17, 2019. http://hdl.handle.net/2123/17995.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Fernando, W Anand K. “Techniques for Designing HFAC Power Distribution Systems; Power Conversion and Distribution .” 2018. Web. 17 Oct 2019.

Vancouver:

Fernando WAK. Techniques for Designing HFAC Power Distribution Systems; Power Conversion and Distribution . [Internet] [Thesis]. University of Sydney; 2018. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/2123/17995.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Fernando WAK. Techniques for Designing HFAC Power Distribution Systems; Power Conversion and Distribution . [Thesis]. University of Sydney; 2018. Available from: http://hdl.handle.net/2123/17995

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Central Florida

15. Mares, Jeremy. Epitaxial Growth, Characterization And Application Of Novel Wide Bandgap Oxide Semiconductors.

Degree: 2010, University of Central Florida

 In this work, a body of knowledge is presented which pertains to the growth, characterization and exploitation of high quality, novel II-IV oxide epitaxial films… (more)

Subjects/Keywords: thin film; oxide; molecular beam epitaxy; wide bandgap; NiO; MBE; Electromagnetics and Photonics; Optics

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APA (6th Edition):

Mares, J. (2010). Epitaxial Growth, Characterization And Application Of Novel Wide Bandgap Oxide Semiconductors. (Doctoral Dissertation). University of Central Florida. Retrieved from https://stars.library.ucf.edu/etd/4218

Chicago Manual of Style (16th Edition):

Mares, Jeremy. “Epitaxial Growth, Characterization And Application Of Novel Wide Bandgap Oxide Semiconductors.” 2010. Doctoral Dissertation, University of Central Florida. Accessed October 17, 2019. https://stars.library.ucf.edu/etd/4218.

MLA Handbook (7th Edition):

Mares, Jeremy. “Epitaxial Growth, Characterization And Application Of Novel Wide Bandgap Oxide Semiconductors.” 2010. Web. 17 Oct 2019.

Vancouver:

Mares J. Epitaxial Growth, Characterization And Application Of Novel Wide Bandgap Oxide Semiconductors. [Internet] [Doctoral dissertation]. University of Central Florida; 2010. [cited 2019 Oct 17]. Available from: https://stars.library.ucf.edu/etd/4218.

Council of Science Editors:

Mares J. Epitaxial Growth, Characterization And Application Of Novel Wide Bandgap Oxide Semiconductors. [Doctoral Dissertation]. University of Central Florida; 2010. Available from: https://stars.library.ucf.edu/etd/4218

16. Fisichella, Gabriele. Graphene Heterostructures with Wide Bandgap Semiconductors.

Degree: 2015, Università degli Studi di Catania

 Graphene (Gr) is a two dimensional material constituted by an atomically thin carbon membrane, characterized by a unique combination of excellent electrical, optical, thermal and… (more)

Subjects/Keywords: Area 09 - Ingegneria industriale e dell'informazione; Graphene, wide bandgap semiconductor, SiC, AlGaN/GaN, AFM, Vertical Heterostructures, Schottky contact, ohmic contact

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APA (6th Edition):

Fisichella, G. (2015). Graphene Heterostructures with Wide Bandgap Semiconductors. (Thesis). Università degli Studi di Catania. Retrieved from http://hdl.handle.net/10761/3869

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Fisichella, Gabriele. “Graphene Heterostructures with Wide Bandgap Semiconductors.” 2015. Thesis, Università degli Studi di Catania. Accessed October 17, 2019. http://hdl.handle.net/10761/3869.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Fisichella, Gabriele. “Graphene Heterostructures with Wide Bandgap Semiconductors.” 2015. Web. 17 Oct 2019.

Vancouver:

Fisichella G. Graphene Heterostructures with Wide Bandgap Semiconductors. [Internet] [Thesis]. Università degli Studi di Catania; 2015. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/10761/3869.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Fisichella G. Graphene Heterostructures with Wide Bandgap Semiconductors. [Thesis]. Università degli Studi di Catania; 2015. Available from: http://hdl.handle.net/10761/3869

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


The Ohio State University

17. Armstrong, Andrew M. Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films.

Degree: PhD, Electrical Engineering, 2006, The Ohio State University

 GaN-based electronics have a high defect density that impedes device performance. This dissertation investigates the origin of deep levels in GaN and AlGaN/GaN with emphasis… (more)

Subjects/Keywords: Gallium Nitride; deep level defects; wide bandgap semiconductors

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APA (6th Edition):

Armstrong, A. M. (2006). Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1164038818

Chicago Manual of Style (16th Edition):

Armstrong, Andrew M. “Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films.” 2006. Doctoral Dissertation, The Ohio State University. Accessed October 17, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1164038818.

MLA Handbook (7th Edition):

Armstrong, Andrew M. “Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films.” 2006. Web. 17 Oct 2019.

Vancouver:

Armstrong AM. Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films. [Internet] [Doctoral dissertation]. The Ohio State University; 2006. [cited 2019 Oct 17]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1164038818.

Council of Science Editors:

Armstrong AM. Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films. [Doctoral Dissertation]. The Ohio State University; 2006. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1164038818

18. LI, ZONGLIN. Simulation and Experiment of Wide Bandgap Material Based Nonvolatile Memory.

Degree: Materials Science and Engineering, 2012, University of California – Riverside

 Flash memory, primarily NAND Flash, is widely used in our daily life like mobile handsets, tablets, and laptabs to enterprise volume data storage. The huge… (more)

Subjects/Keywords: Materials Science; Nonvolatile Memory; Wide Bandgap Material

…10 Chapter 2 Flash memory based on wide bandgap materials… …13 2.1 Introduction of memory based on wide bandgap material… …13 2.2 Advantages of flash memory based on wide bandgap materials… …26 3.1 Device physics of memory based on wide bandgap material… …cost. Wide bandgap based PNP/NPN structure can store space charge for millions of years due… 

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APA (6th Edition):

LI, Z. (2012). Simulation and Experiment of Wide Bandgap Material Based Nonvolatile Memory. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/88h5r2qn

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

LI, ZONGLIN. “Simulation and Experiment of Wide Bandgap Material Based Nonvolatile Memory.” 2012. Thesis, University of California – Riverside. Accessed October 17, 2019. http://www.escholarship.org/uc/item/88h5r2qn.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

LI, ZONGLIN. “Simulation and Experiment of Wide Bandgap Material Based Nonvolatile Memory.” 2012. Web. 17 Oct 2019.

Vancouver:

LI Z. Simulation and Experiment of Wide Bandgap Material Based Nonvolatile Memory. [Internet] [Thesis]. University of California – Riverside; 2012. [cited 2019 Oct 17]. Available from: http://www.escholarship.org/uc/item/88h5r2qn.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

LI Z. Simulation and Experiment of Wide Bandgap Material Based Nonvolatile Memory. [Thesis]. University of California – Riverside; 2012. Available from: http://www.escholarship.org/uc/item/88h5r2qn

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


INP Toulouse

19. Koné, Sodjan. Développement de briques technologiques pour la réalisation des composants de puissance en diamant monocristallin : Development of technologies for single crystal diamond power devices processing.

Degree: Docteur es, Génie électrique, 2011, INP Toulouse

A mesure que les demandes dans le domaine de l'électronique de puissance tendent vers des conditions de plus en plus extrêmes (forte densité de puissance,… (more)

Subjects/Keywords: Electronique de puissance; Nouveaux composants; Semi-conducteurs grands gaps; Diamant CVD; Power electronics; Power switching devices; Wide bandgap semiconductors; Cvd

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APA (6th Edition):

Koné, S. (2011). Développement de briques technologiques pour la réalisation des composants de puissance en diamant monocristallin : Development of technologies for single crystal diamond power devices processing. (Doctoral Dissertation). INP Toulouse. Retrieved from http://www.theses.fr/2011INPT0048

Chicago Manual of Style (16th Edition):

Koné, Sodjan. “Développement de briques technologiques pour la réalisation des composants de puissance en diamant monocristallin : Development of technologies for single crystal diamond power devices processing.” 2011. Doctoral Dissertation, INP Toulouse. Accessed October 17, 2019. http://www.theses.fr/2011INPT0048.

MLA Handbook (7th Edition):

Koné, Sodjan. “Développement de briques technologiques pour la réalisation des composants de puissance en diamant monocristallin : Development of technologies for single crystal diamond power devices processing.” 2011. Web. 17 Oct 2019.

Vancouver:

Koné S. Développement de briques technologiques pour la réalisation des composants de puissance en diamant monocristallin : Development of technologies for single crystal diamond power devices processing. [Internet] [Doctoral dissertation]. INP Toulouse; 2011. [cited 2019 Oct 17]. Available from: http://www.theses.fr/2011INPT0048.

Council of Science Editors:

Koné S. Développement de briques technologiques pour la réalisation des composants de puissance en diamant monocristallin : Development of technologies for single crystal diamond power devices processing. [Doctoral Dissertation]. INP Toulouse; 2011. Available from: http://www.theses.fr/2011INPT0048


INP Toulouse

20. Civrac, Gabriel. Vers la réalisation de composants haute tension, forte puissance sur diamant CVD. Développement des technologies associées : Study and realization of high voltage, high power switches on CVD diamond. Development of associated technology.

Degree: Docteur es, Micro-électronique, 2009, INP Toulouse

L'évolution des composants d'électronique de puissance se heurte aujourd'hui aux limites physiques du silicium. L'utilisation des semi-conducteurs à large bande interdite permettraient de dépasser ces… (more)

Subjects/Keywords: Electronique de puissance; Diamant; Nouveaux composants; Semiconducteur à large bande interdite; Power electronics; Diamond; Wide bandgap semiconductor

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APA (6th Edition):

Civrac, G. (2009). Vers la réalisation de composants haute tension, forte puissance sur diamant CVD. Développement des technologies associées : Study and realization of high voltage, high power switches on CVD diamond. Development of associated technology. (Doctoral Dissertation). INP Toulouse. Retrieved from http://www.theses.fr/2009INPT029H

Chicago Manual of Style (16th Edition):

Civrac, Gabriel. “Vers la réalisation de composants haute tension, forte puissance sur diamant CVD. Développement des technologies associées : Study and realization of high voltage, high power switches on CVD diamond. Development of associated technology.” 2009. Doctoral Dissertation, INP Toulouse. Accessed October 17, 2019. http://www.theses.fr/2009INPT029H.

MLA Handbook (7th Edition):

Civrac, Gabriel. “Vers la réalisation de composants haute tension, forte puissance sur diamant CVD. Développement des technologies associées : Study and realization of high voltage, high power switches on CVD diamond. Development of associated technology.” 2009. Web. 17 Oct 2019.

Vancouver:

Civrac G. Vers la réalisation de composants haute tension, forte puissance sur diamant CVD. Développement des technologies associées : Study and realization of high voltage, high power switches on CVD diamond. Development of associated technology. [Internet] [Doctoral dissertation]. INP Toulouse; 2009. [cited 2019 Oct 17]. Available from: http://www.theses.fr/2009INPT029H.

Council of Science Editors:

Civrac G. Vers la réalisation de composants haute tension, forte puissance sur diamant CVD. Développement des technologies associées : Study and realization of high voltage, high power switches on CVD diamond. Development of associated technology. [Doctoral Dissertation]. INP Toulouse; 2009. Available from: http://www.theses.fr/2009INPT029H


University of Arkansas

21. Benavides Herrera, Maria Raquel. An RS-485 Transceiver in a Silicon Carbide CMOS Process.

Degree: MSEE, 2018, University of Arkansas

  This thesis presents the design, simulation and test results of a silicon carbide (SiC) RS-485 transceiver for high temperature applications. This circuit is a… (more)

Subjects/Keywords: High Temperature Electronics; RS-485; Silicon Carbide; Transceiver; Wide Bandgap ICs; Digital Circuits; VLSI and Circuits, Embedded and Hardware Systems

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APA (6th Edition):

Benavides Herrera, M. R. (2018). An RS-485 Transceiver in a Silicon Carbide CMOS Process. (Masters Thesis). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/3067

Chicago Manual of Style (16th Edition):

Benavides Herrera, Maria Raquel. “An RS-485 Transceiver in a Silicon Carbide CMOS Process.” 2018. Masters Thesis, University of Arkansas. Accessed October 17, 2019. https://scholarworks.uark.edu/etd/3067.

MLA Handbook (7th Edition):

Benavides Herrera, Maria Raquel. “An RS-485 Transceiver in a Silicon Carbide CMOS Process.” 2018. Web. 17 Oct 2019.

Vancouver:

Benavides Herrera MR. An RS-485 Transceiver in a Silicon Carbide CMOS Process. [Internet] [Masters thesis]. University of Arkansas; 2018. [cited 2019 Oct 17]. Available from: https://scholarworks.uark.edu/etd/3067.

Council of Science Editors:

Benavides Herrera MR. An RS-485 Transceiver in a Silicon Carbide CMOS Process. [Masters Thesis]. University of Arkansas; 2018. Available from: https://scholarworks.uark.edu/etd/3067


University of Arkansas

22. Shepherd, Paul. A Phase-Locked Loop in High-Temperature Silicon Carbide and General Design Methods for Silicon Carbide Integrated Circuits.

Degree: PhD, 2014, University of Arkansas

  Silicon carbide (SiC) has long been considered for integrated circuits (ICs). It offers several advantages, including wider temperature range, larger critical electric field, and… (more)

Subjects/Keywords: Integrated Circuits; Phase-locked loop; Silicon Carbide; wide bandgap; VLSI and Circuits, Embedded and Hardware Systems

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APA (6th Edition):

Shepherd, P. (2014). A Phase-Locked Loop in High-Temperature Silicon Carbide and General Design Methods for Silicon Carbide Integrated Circuits. (Doctoral Dissertation). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/2013

Chicago Manual of Style (16th Edition):

Shepherd, Paul. “A Phase-Locked Loop in High-Temperature Silicon Carbide and General Design Methods for Silicon Carbide Integrated Circuits.” 2014. Doctoral Dissertation, University of Arkansas. Accessed October 17, 2019. https://scholarworks.uark.edu/etd/2013.

MLA Handbook (7th Edition):

Shepherd, Paul. “A Phase-Locked Loop in High-Temperature Silicon Carbide and General Design Methods for Silicon Carbide Integrated Circuits.” 2014. Web. 17 Oct 2019.

Vancouver:

Shepherd P. A Phase-Locked Loop in High-Temperature Silicon Carbide and General Design Methods for Silicon Carbide Integrated Circuits. [Internet] [Doctoral dissertation]. University of Arkansas; 2014. [cited 2019 Oct 17]. Available from: https://scholarworks.uark.edu/etd/2013.

Council of Science Editors:

Shepherd P. A Phase-Locked Loop in High-Temperature Silicon Carbide and General Design Methods for Silicon Carbide Integrated Circuits. [Doctoral Dissertation]. University of Arkansas; 2014. Available from: https://scholarworks.uark.edu/etd/2013


University of Arkansas

23. Murphree, Robert. A Silicon Carbide Power Management Solution for High Temperature Applications.

Degree: MSEE, 2017, University of Arkansas

  The increasing demand for discrete power devices capable of operating in high temperature and high voltage applications has spurred on the research of semiconductor… (more)

Subjects/Keywords: High Temperature; Integrated Circuits; Linear Regulator; Power Management; Silicon Carbide; Wide Bandgap ICs; Power and Energy

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APA (6th Edition):

Murphree, R. (2017). A Silicon Carbide Power Management Solution for High Temperature Applications. (Masters Thesis). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/2542

Chicago Manual of Style (16th Edition):

Murphree, Robert. “A Silicon Carbide Power Management Solution for High Temperature Applications.” 2017. Masters Thesis, University of Arkansas. Accessed October 17, 2019. https://scholarworks.uark.edu/etd/2542.

MLA Handbook (7th Edition):

Murphree, Robert. “A Silicon Carbide Power Management Solution for High Temperature Applications.” 2017. Web. 17 Oct 2019.

Vancouver:

Murphree R. A Silicon Carbide Power Management Solution for High Temperature Applications. [Internet] [Masters thesis]. University of Arkansas; 2017. [cited 2019 Oct 17]. Available from: https://scholarworks.uark.edu/etd/2542.

Council of Science Editors:

Murphree R. A Silicon Carbide Power Management Solution for High Temperature Applications. [Masters Thesis]. University of Arkansas; 2017. Available from: https://scholarworks.uark.edu/etd/2542

24. Wang, Xinzhi. Fabrication of Transparent Conductive Oxide Thin Films in the In-Ga-Zn-O and In-Sn-Zn-O Systems by Facing-Target DC-sputtering Technique : 対向ターゲット式DCスパッタリング法によるIn-Ga-Zn-OおよびIn-Sn-Zn-O系透明導電性酸化物薄膜の作製.

Degree: 博士(工学), 2017, Tokushima University / 徳島大学

Subjects/Keywords: Wide bandgap semiconductors; thin films; DC sputtering; IGZO; ITZO

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APA (6th Edition):

Wang, X. (2017). Fabrication of Transparent Conductive Oxide Thin Films in the In-Ga-Zn-O and In-Sn-Zn-O Systems by Facing-Target DC-sputtering Technique : 対向ターゲット式DCスパッタリング法によるIn-Ga-Zn-OおよびIn-Sn-Zn-O系透明導電性酸化物薄膜の作製. (Thesis). Tokushima University / 徳島大学. Retrieved from http://repo.lib.tokushima-u.ac.jp/110939

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Xinzhi. “Fabrication of Transparent Conductive Oxide Thin Films in the In-Ga-Zn-O and In-Sn-Zn-O Systems by Facing-Target DC-sputtering Technique : 対向ターゲット式DCスパッタリング法によるIn-Ga-Zn-OおよびIn-Sn-Zn-O系透明導電性酸化物薄膜の作製.” 2017. Thesis, Tokushima University / 徳島大学. Accessed October 17, 2019. http://repo.lib.tokushima-u.ac.jp/110939.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Xinzhi. “Fabrication of Transparent Conductive Oxide Thin Films in the In-Ga-Zn-O and In-Sn-Zn-O Systems by Facing-Target DC-sputtering Technique : 対向ターゲット式DCスパッタリング法によるIn-Ga-Zn-OおよびIn-Sn-Zn-O系透明導電性酸化物薄膜の作製.” 2017. Web. 17 Oct 2019.

Vancouver:

Wang X. Fabrication of Transparent Conductive Oxide Thin Films in the In-Ga-Zn-O and In-Sn-Zn-O Systems by Facing-Target DC-sputtering Technique : 対向ターゲット式DCスパッタリング法によるIn-Ga-Zn-OおよびIn-Sn-Zn-O系透明導電性酸化物薄膜の作製. [Internet] [Thesis]. Tokushima University / 徳島大学; 2017. [cited 2019 Oct 17]. Available from: http://repo.lib.tokushima-u.ac.jp/110939.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang X. Fabrication of Transparent Conductive Oxide Thin Films in the In-Ga-Zn-O and In-Sn-Zn-O Systems by Facing-Target DC-sputtering Technique : 対向ターゲット式DCスパッタリング法によるIn-Ga-Zn-OおよびIn-Sn-Zn-O系透明導電性酸化物薄膜の作製. [Thesis]. Tokushima University / 徳島大学; 2017. Available from: http://repo.lib.tokushima-u.ac.jp/110939

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


George Mason University

25. Okayama, Taizo. Performance of Devices Made of Large Band-gap Semiconductors, SiC and GaN .

Degree: 2007, George Mason University

 Silicon (Si) and gallium arsenide (GaAs) devices have limitations for certain applications such as high-power and/or high-frequency due to their material properties. As a partial… (more)

Subjects/Keywords: SiC; GaN; wide bandgap; traps; high power

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APA (6th Edition):

Okayama, T. (2007). Performance of Devices Made of Large Band-gap Semiconductors, SiC and GaN . (Thesis). George Mason University. Retrieved from http://hdl.handle.net/1920/2935

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Okayama, Taizo. “Performance of Devices Made of Large Band-gap Semiconductors, SiC and GaN .” 2007. Thesis, George Mason University. Accessed October 17, 2019. http://hdl.handle.net/1920/2935.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Okayama, Taizo. “Performance of Devices Made of Large Band-gap Semiconductors, SiC and GaN .” 2007. Web. 17 Oct 2019.

Vancouver:

Okayama T. Performance of Devices Made of Large Band-gap Semiconductors, SiC and GaN . [Internet] [Thesis]. George Mason University; 2007. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/1920/2935.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Okayama T. Performance of Devices Made of Large Band-gap Semiconductors, SiC and GaN . [Thesis]. George Mason University; 2007. Available from: http://hdl.handle.net/1920/2935

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

26. TEO TINGTING, SHARON. MODIFICATION OF WIDE BANDGAP NANOMATERIALS FOR HETEROGENEOUS PHOTOCATALYSIS.

Degree: 2012, National University of Singapore

Subjects/Keywords: Wide bandgap; photocatalytic; modification; doping; nanocomposite; thiourea

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APA (6th Edition):

TEO TINGTING, S. (2012). MODIFICATION OF WIDE BANDGAP NANOMATERIALS FOR HETEROGENEOUS PHOTOCATALYSIS. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/38812

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

TEO TINGTING, SHARON. “MODIFICATION OF WIDE BANDGAP NANOMATERIALS FOR HETEROGENEOUS PHOTOCATALYSIS.” 2012. Thesis, National University of Singapore. Accessed October 17, 2019. http://scholarbank.nus.edu.sg/handle/10635/38812.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

TEO TINGTING, SHARON. “MODIFICATION OF WIDE BANDGAP NANOMATERIALS FOR HETEROGENEOUS PHOTOCATALYSIS.” 2012. Web. 17 Oct 2019.

Vancouver:

TEO TINGTING S. MODIFICATION OF WIDE BANDGAP NANOMATERIALS FOR HETEROGENEOUS PHOTOCATALYSIS. [Internet] [Thesis]. National University of Singapore; 2012. [cited 2019 Oct 17]. Available from: http://scholarbank.nus.edu.sg/handle/10635/38812.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

TEO TINGTING S. MODIFICATION OF WIDE BANDGAP NANOMATERIALS FOR HETEROGENEOUS PHOTOCATALYSIS. [Thesis]. National University of Singapore; 2012. Available from: http://scholarbank.nus.edu.sg/handle/10635/38812

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of South Carolina

27. Islam, Mohammad Mahbubul. Optically Controlled High Power High Speed Wide Band Gap Devices.

Degree: PhD, Electrical Engineering, 2012, University of South Carolina

  There has been continued and increasing interest over the past few years in the areas of wide bandgap power electronics for high speed, high… (more)

Subjects/Keywords: Electrical and Computer Engineering; Electrical and Electronics; Engineering; Bioelectric; Optical Trigger; Photo diode; Photo Transistor; Power Devices; Wide Bandgap

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APA (6th Edition):

Islam, M. M. (2012). Optically Controlled High Power High Speed Wide Band Gap Devices. (Doctoral Dissertation). University of South Carolina. Retrieved from https://scholarcommons.sc.edu/etd/2184

Chicago Manual of Style (16th Edition):

Islam, Mohammad Mahbubul. “Optically Controlled High Power High Speed Wide Band Gap Devices.” 2012. Doctoral Dissertation, University of South Carolina. Accessed October 17, 2019. https://scholarcommons.sc.edu/etd/2184.

MLA Handbook (7th Edition):

Islam, Mohammad Mahbubul. “Optically Controlled High Power High Speed Wide Band Gap Devices.” 2012. Web. 17 Oct 2019.

Vancouver:

Islam MM. Optically Controlled High Power High Speed Wide Band Gap Devices. [Internet] [Doctoral dissertation]. University of South Carolina; 2012. [cited 2019 Oct 17]. Available from: https://scholarcommons.sc.edu/etd/2184.

Council of Science Editors:

Islam MM. Optically Controlled High Power High Speed Wide Band Gap Devices. [Doctoral Dissertation]. University of South Carolina; 2012. Available from: https://scholarcommons.sc.edu/etd/2184


University of South Carolina

28. Pak, Rahmi Orhon. Investigation Of Wide Bandgap Semiconductor Devices For Radiation Detection Applications.

Degree: PhD, Electrical Engineering, 2016, University of South Carolina

  Radioactive materials, as they decay, generate different high-frequency electromagnetic radiation such as alpha particles, beta particles, x-rays, gamma-rays, and neutrons. Nuclear detectors could stop… (more)

Subjects/Keywords: Electrical and Computer Engineering; Electrical and Electronics; Engineering; Investigation; Wide Bandgap; Semiconductor Devices; Radiation Detection Applications

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APA (6th Edition):

Pak, R. O. (2016). Investigation Of Wide Bandgap Semiconductor Devices For Radiation Detection Applications. (Doctoral Dissertation). University of South Carolina. Retrieved from https://scholarcommons.sc.edu/etd/3930

Chicago Manual of Style (16th Edition):

Pak, Rahmi Orhon. “Investigation Of Wide Bandgap Semiconductor Devices For Radiation Detection Applications.” 2016. Doctoral Dissertation, University of South Carolina. Accessed October 17, 2019. https://scholarcommons.sc.edu/etd/3930.

MLA Handbook (7th Edition):

Pak, Rahmi Orhon. “Investigation Of Wide Bandgap Semiconductor Devices For Radiation Detection Applications.” 2016. Web. 17 Oct 2019.

Vancouver:

Pak RO. Investigation Of Wide Bandgap Semiconductor Devices For Radiation Detection Applications. [Internet] [Doctoral dissertation]. University of South Carolina; 2016. [cited 2019 Oct 17]. Available from: https://scholarcommons.sc.edu/etd/3930.

Council of Science Editors:

Pak RO. Investigation Of Wide Bandgap Semiconductor Devices For Radiation Detection Applications. [Doctoral Dissertation]. University of South Carolina; 2016. Available from: https://scholarcommons.sc.edu/etd/3930


North Carolina State University

29. Berkman, Erkan Acar. Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices.

Degree: PhD, Materials Science and Engineering, 2008, North Carolina State University

 In this study, heteroepitaxial growth of III-Nitrides was performed by metalorganic chemical vapor deposition (MOCVD) technique on (0001) Al2O3 substrates to develop GaN and InxGa1-xN… (more)

Subjects/Keywords: InGaN; GaN; MOCVD; LED; Photodiode; Wide Bandgap

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Berkman, E. A. (2008). Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3737

Chicago Manual of Style (16th Edition):

Berkman, Erkan Acar. “Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices.” 2008. Doctoral Dissertation, North Carolina State University. Accessed October 17, 2019. http://www.lib.ncsu.edu/resolver/1840.16/3737.

MLA Handbook (7th Edition):

Berkman, Erkan Acar. “Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices.” 2008. Web. 17 Oct 2019.

Vancouver:

Berkman EA. Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2019 Oct 17]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3737.

Council of Science Editors:

Berkman EA. Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3737


University of Toledo

30. Dhakal, Shankar. Circuit Level Reliability Considerations in Wide Bandgap Semiconductor Devices.

Degree: MS, Electrical Engineering, 2018, University of Toledo

 The recent development in the wide bandgap (WBG) semiconductor devices such as gallium nitride (GaN) has pushed the limit for the next generation power electronics… (more)

Subjects/Keywords: Electrical Engineering; Reliability; WBG; Wide Bandgap; High frequency switching; parasitic inductance; Overshoot; Gate Resistance; GaN HEMT

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Dhakal, S. (2018). Circuit Level Reliability Considerations in Wide Bandgap Semiconductor Devices. (Masters Thesis). University of Toledo. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=toledo1532703747534188

Chicago Manual of Style (16th Edition):

Dhakal, Shankar. “Circuit Level Reliability Considerations in Wide Bandgap Semiconductor Devices.” 2018. Masters Thesis, University of Toledo. Accessed October 17, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1532703747534188.

MLA Handbook (7th Edition):

Dhakal, Shankar. “Circuit Level Reliability Considerations in Wide Bandgap Semiconductor Devices.” 2018. Web. 17 Oct 2019.

Vancouver:

Dhakal S. Circuit Level Reliability Considerations in Wide Bandgap Semiconductor Devices. [Internet] [Masters thesis]. University of Toledo; 2018. [cited 2019 Oct 17]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1532703747534188.

Council of Science Editors:

Dhakal S. Circuit Level Reliability Considerations in Wide Bandgap Semiconductor Devices. [Masters Thesis]. University of Toledo; 2018. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1532703747534188

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