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You searched for subject:(Valence band). Showing records 1 – 15 of 15 total matches.

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Texas State University – San Marcos

1. LeBlanc, Elizabeth. Band Gap Engineering Studies of PbTe, SnTe, and CdSeTe for CdTe Solar Cell Applications.

Degree: PhD, Materials Science, Engineering, and Commercialization, 2020, Texas State University – San Marcos

 In an environment of growing energy consumption, the demand for cost effective and efficient approaches to renewable energy is on the rise. One of the… (more)

Subjects/Keywords: CdTe; PbTe; SnTe; CdSeTe; Valence band offset; Band alignment

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APA (6th Edition):

LeBlanc, E. (2020). Band Gap Engineering Studies of PbTe, SnTe, and CdSeTe for CdTe Solar Cell Applications. (Doctoral Dissertation). Texas State University – San Marcos. Retrieved from https://digital.library.txstate.edu/handle/10877/12271

Chicago Manual of Style (16th Edition):

LeBlanc, Elizabeth. “Band Gap Engineering Studies of PbTe, SnTe, and CdSeTe for CdTe Solar Cell Applications.” 2020. Doctoral Dissertation, Texas State University – San Marcos. Accessed September 26, 2020. https://digital.library.txstate.edu/handle/10877/12271.

MLA Handbook (7th Edition):

LeBlanc, Elizabeth. “Band Gap Engineering Studies of PbTe, SnTe, and CdSeTe for CdTe Solar Cell Applications.” 2020. Web. 26 Sep 2020.

Vancouver:

LeBlanc E. Band Gap Engineering Studies of PbTe, SnTe, and CdSeTe for CdTe Solar Cell Applications. [Internet] [Doctoral dissertation]. Texas State University – San Marcos; 2020. [cited 2020 Sep 26]. Available from: https://digital.library.txstate.edu/handle/10877/12271.

Council of Science Editors:

LeBlanc E. Band Gap Engineering Studies of PbTe, SnTe, and CdSeTe for CdTe Solar Cell Applications. [Doctoral Dissertation]. Texas State University – San Marcos; 2020. Available from: https://digital.library.txstate.edu/handle/10877/12271


University of Delaware

2. Jones, Kevin. Single-stage co-evaporation and surface characterization of (Ag,Cu)(In,Ga)Se2 semiconductors for solar cell application.

Degree: PhD, University of Delaware, Department of Materials Science and Engineering, 2018, University of Delaware

 Substituting Ag for some of the Cu in (Ag,Cu)(Ga,In)Se2 solar cells may improve their performance. We have used photoelectron spectroscopy to study how this substitution… (more)

Subjects/Keywords: Applied sciences; Polycrystalline films; Photoelectron spectroscopy; Valence band maximum

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APA (6th Edition):

Jones, K. (2018). Single-stage co-evaporation and surface characterization of (Ag,Cu)(In,Ga)Se2 semiconductors for solar cell application. (Doctoral Dissertation). University of Delaware. Retrieved from http://udspace.udel.edu/handle/19716/23607

Chicago Manual of Style (16th Edition):

Jones, Kevin. “Single-stage co-evaporation and surface characterization of (Ag,Cu)(In,Ga)Se2 semiconductors for solar cell application.” 2018. Doctoral Dissertation, University of Delaware. Accessed September 26, 2020. http://udspace.udel.edu/handle/19716/23607.

MLA Handbook (7th Edition):

Jones, Kevin. “Single-stage co-evaporation and surface characterization of (Ag,Cu)(In,Ga)Se2 semiconductors for solar cell application.” 2018. Web. 26 Sep 2020.

Vancouver:

Jones K. Single-stage co-evaporation and surface characterization of (Ag,Cu)(In,Ga)Se2 semiconductors for solar cell application. [Internet] [Doctoral dissertation]. University of Delaware; 2018. [cited 2020 Sep 26]. Available from: http://udspace.udel.edu/handle/19716/23607.

Council of Science Editors:

Jones K. Single-stage co-evaporation and surface characterization of (Ag,Cu)(In,Ga)Se2 semiconductors for solar cell application. [Doctoral Dissertation]. University of Delaware; 2018. Available from: http://udspace.udel.edu/handle/19716/23607


University of Wollongong

3. Sale, Matthew. Large throughput analysis of crystal structures for identification of promising li-ion battery materials.

Degree: MS- Research, 2014, University of Wollongong

  It is a popular research pursuit to improve the properties of rechargeable batteries. The motivation for this research is to make rechargeable batteries more… (more)

Subjects/Keywords: Li-ion batteries; computational materials simulation; bond valence sum map; density functional theory; VASP; Nudged Elastic Band; Ionic conductivity; 3DBVSMAPPER

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APA (6th Edition):

Sale, M. (2014). Large throughput analysis of crystal structures for identification of promising li-ion battery materials. (Masters Thesis). University of Wollongong. Retrieved from 0204 CONDENSED MATTER PHYSICS, 0302 INORGANIC CHEMISTRY, 0306 PHYSICAL CHEMISTRY (INCL. STRUCTURAL), 0307 THEORETICAL AND COMPUTATIONAL CHEMISTRY ; https://ro.uow.edu.au/theses/4139

Chicago Manual of Style (16th Edition):

Sale, Matthew. “Large throughput analysis of crystal structures for identification of promising li-ion battery materials.” 2014. Masters Thesis, University of Wollongong. Accessed September 26, 2020. 0204 CONDENSED MATTER PHYSICS, 0302 INORGANIC CHEMISTRY, 0306 PHYSICAL CHEMISTRY (INCL. STRUCTURAL), 0307 THEORETICAL AND COMPUTATIONAL CHEMISTRY ; https://ro.uow.edu.au/theses/4139.

MLA Handbook (7th Edition):

Sale, Matthew. “Large throughput analysis of crystal structures for identification of promising li-ion battery materials.” 2014. Web. 26 Sep 2020.

Vancouver:

Sale M. Large throughput analysis of crystal structures for identification of promising li-ion battery materials. [Internet] [Masters thesis]. University of Wollongong; 2014. [cited 2020 Sep 26]. Available from: 0204 CONDENSED MATTER PHYSICS, 0302 INORGANIC CHEMISTRY, 0306 PHYSICAL CHEMISTRY (INCL. STRUCTURAL), 0307 THEORETICAL AND COMPUTATIONAL CHEMISTRY ; https://ro.uow.edu.au/theses/4139.

Council of Science Editors:

Sale M. Large throughput analysis of crystal structures for identification of promising li-ion battery materials. [Masters Thesis]. University of Wollongong; 2014. Available from: 0204 CONDENSED MATTER PHYSICS, 0302 INORGANIC CHEMISTRY, 0306 PHYSICAL CHEMISTRY (INCL. STRUCTURAL), 0307 THEORETICAL AND COMPUTATIONAL CHEMISTRY ; https://ro.uow.edu.au/theses/4139


University College Cork

4. Hartnett, Mark C. Role of sulfur in vibration spectra and bonding and electronic structure of GeSi surfaces and interfaces.

Degree: 2016, University College Cork

 A quantum mechanical density functional theory approach was used to investigate the structural atomic configuration, vibration mode frequencies and electronic structure of surfaces and interfaces… (more)

Subjects/Keywords: Germanium; Silicon; Vibrational; Mode; Frequencies; Surfaces; Interfaces; Band structure; Sulfur; Hydrogen; Interface states; Conduction and valence bands; Density functional theory

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APA (6th Edition):

Hartnett, M. C. (2016). Role of sulfur in vibration spectra and bonding and electronic structure of GeSi surfaces and interfaces. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/3665

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hartnett, Mark C. “Role of sulfur in vibration spectra and bonding and electronic structure of GeSi surfaces and interfaces.” 2016. Thesis, University College Cork. Accessed September 26, 2020. http://hdl.handle.net/10468/3665.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hartnett, Mark C. “Role of sulfur in vibration spectra and bonding and electronic structure of GeSi surfaces and interfaces.” 2016. Web. 26 Sep 2020.

Vancouver:

Hartnett MC. Role of sulfur in vibration spectra and bonding and electronic structure of GeSi surfaces and interfaces. [Internet] [Thesis]. University College Cork; 2016. [cited 2020 Sep 26]. Available from: http://hdl.handle.net/10468/3665.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hartnett MC. Role of sulfur in vibration spectra and bonding and electronic structure of GeSi surfaces and interfaces. [Thesis]. University College Cork; 2016. Available from: http://hdl.handle.net/10468/3665

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Alabama

5. Mackey, Frederick D. Electron tunneling in the tight-binding approximation.

Degree: 2016, University of Alabama

 In this thesis, we treat tunneling similar to a scattering problem in which an incident wave on a barrier is partially transmitted and partially reflected.… (more)

Subjects/Keywords: Electronic Thesis or Dissertation;  – thesis; Condensed matter physics; Materials Science; Information technology; conduction band; landauer conductanc formula; quantum tunneling; simple barrier model; tight-binding; valence band

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APA (6th Edition):

Mackey, F. D. (2016). Electron tunneling in the tight-binding approximation. (Thesis). University of Alabama. Retrieved from http://purl.lib.ua.edu/163874

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mackey, Frederick D. “Electron tunneling in the tight-binding approximation.” 2016. Thesis, University of Alabama. Accessed September 26, 2020. http://purl.lib.ua.edu/163874.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mackey, Frederick D. “Electron tunneling in the tight-binding approximation.” 2016. Web. 26 Sep 2020.

Vancouver:

Mackey FD. Electron tunneling in the tight-binding approximation. [Internet] [Thesis]. University of Alabama; 2016. [cited 2020 Sep 26]. Available from: http://purl.lib.ua.edu/163874.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mackey FD. Electron tunneling in the tight-binding approximation. [Thesis]. University of Alabama; 2016. Available from: http://purl.lib.ua.edu/163874

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Freie Universität Berlin

6. Gottberg, Alexander. Structural properties and electronic finite-size effects in metallic systems of reduced dimensions.

Degree: 2011, Freie Universität Berlin

 The morphology and valence-band electronic structure of single-crystalline 3s-, 3d-, 4d- and 5d-metal layers on the (110) faces of tungsten and molybdenum were studied in… (more)

Subjects/Keywords: quantum-well states; noble-metal layers; Rashba splitting; ultra-thin films; interlayer valence-band structure; 500 Naturwissenschaften und Mathematik::530 Physik::530 Physik

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APA (6th Edition):

Gottberg, A. (2011). Structural properties and electronic finite-size effects in metallic systems of reduced dimensions. (Thesis). Freie Universität Berlin. Retrieved from http://dx.doi.org/10.17169/refubium-7831

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gottberg, Alexander. “Structural properties and electronic finite-size effects in metallic systems of reduced dimensions.” 2011. Thesis, Freie Universität Berlin. Accessed September 26, 2020. http://dx.doi.org/10.17169/refubium-7831.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gottberg, Alexander. “Structural properties and electronic finite-size effects in metallic systems of reduced dimensions.” 2011. Web. 26 Sep 2020.

Vancouver:

Gottberg A. Structural properties and electronic finite-size effects in metallic systems of reduced dimensions. [Internet] [Thesis]. Freie Universität Berlin; 2011. [cited 2020 Sep 26]. Available from: http://dx.doi.org/10.17169/refubium-7831.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gottberg A. Structural properties and electronic finite-size effects in metallic systems of reduced dimensions. [Thesis]. Freie Universität Berlin; 2011. Available from: http://dx.doi.org/10.17169/refubium-7831

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

7. Svensson, Pamela H.W. Valence Band Properties of the Ruthenium Complex Catalyst Using Ab Initio Theory.

Degree: Materials Theory, 2018, Uppsala University

  Ruthenium complexes has been geometrically optimized with different combinations of basis sets. Using single point calculation, the Density of States and partial Density of… (more)

Subjects/Keywords: Valence; Band; Properties; of; the; Ruthenium; Complex; Catalyst; Using; Ab; Initio; Theory; DFT; DOS; pDOS; Atom and Molecular Physics and Optics; Atom- och molekylfysik och optik

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APA (6th Edition):

Svensson, P. H. W. (2018). Valence Band Properties of the Ruthenium Complex Catalyst Using Ab Initio Theory. (Thesis). Uppsala University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-359394

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Svensson, Pamela H W. “Valence Band Properties of the Ruthenium Complex Catalyst Using Ab Initio Theory.” 2018. Thesis, Uppsala University. Accessed September 26, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-359394.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Svensson, Pamela H W. “Valence Band Properties of the Ruthenium Complex Catalyst Using Ab Initio Theory.” 2018. Web. 26 Sep 2020.

Vancouver:

Svensson PHW. Valence Band Properties of the Ruthenium Complex Catalyst Using Ab Initio Theory. [Internet] [Thesis]. Uppsala University; 2018. [cited 2020 Sep 26]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-359394.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Svensson PHW. Valence Band Properties of the Ruthenium Complex Catalyst Using Ab Initio Theory. [Thesis]. Uppsala University; 2018. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-359394

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

8. Lavayssière, Maylis. Electrical and chemical mapping of silicon pn junctions using energy-filtered X-ray PhotoElectron Mission Microscopy : Electrical and chemical mapping of silicon pn junctions using energy-filtered X-ray photoelectron emission microscopy.

Degree: Docteur es, Sciences et technologie industrielles, 2011, Université de Grenoble

Ce mémoire de thèse traite de l'étude de jonctions pn silicium planaires, réalisées par épitaxie localisée, avec un nouveau type de microscopie à émission de… (more)

Subjects/Keywords: XPS; XPEEM; Spectromicroscopie; Silicium dopé; Rayonnement synchrotron; Travail de sortie; Bande de valence; Niveaux de cœur; SIMION; Champ sombre; XPS; XPEEM; Spectromicroscopy; Silicon doped; Synchrotron radiation; Work function; Valence band; Core-level; SIMION; Dark-field

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APA (6th Edition):

Lavayssière, M. (2011). Electrical and chemical mapping of silicon pn junctions using energy-filtered X-ray PhotoElectron Mission Microscopy : Electrical and chemical mapping of silicon pn junctions using energy-filtered X-ray photoelectron emission microscopy. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENT024

Chicago Manual of Style (16th Edition):

Lavayssière, Maylis. “Electrical and chemical mapping of silicon pn junctions using energy-filtered X-ray PhotoElectron Mission Microscopy : Electrical and chemical mapping of silicon pn junctions using energy-filtered X-ray photoelectron emission microscopy.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed September 26, 2020. http://www.theses.fr/2011GRENT024.

MLA Handbook (7th Edition):

Lavayssière, Maylis. “Electrical and chemical mapping of silicon pn junctions using energy-filtered X-ray PhotoElectron Mission Microscopy : Electrical and chemical mapping of silicon pn junctions using energy-filtered X-ray photoelectron emission microscopy.” 2011. Web. 26 Sep 2020.

Vancouver:

Lavayssière M. Electrical and chemical mapping of silicon pn junctions using energy-filtered X-ray PhotoElectron Mission Microscopy : Electrical and chemical mapping of silicon pn junctions using energy-filtered X-ray photoelectron emission microscopy. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2020 Sep 26]. Available from: http://www.theses.fr/2011GRENT024.

Council of Science Editors:

Lavayssière M. Electrical and chemical mapping of silicon pn junctions using energy-filtered X-ray PhotoElectron Mission Microscopy : Electrical and chemical mapping of silicon pn junctions using energy-filtered X-ray photoelectron emission microscopy. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENT024

9. Dib, Elias. Interaction électron-phonon dans le cadre du formalisme des fonctions de Green hors-équilibre : application à la modélisation de transistors MOS de type p : Electron-phonon interactions within the quantum formalism of Nonequilibrium Green’s Function applied to the simulation of p-type MOSFETs.

Degree: Docteur es, Micro et nanoélectronique, 2013, Aix Marseille Université

Depuis que les dimensions des nano-dispositifs ont atteint l’échelle nanométrique, la simulation quantique est devenue incontournable dans le domaine de la nanoélectronique. Parmi les différents… (more)

Subjects/Keywords: Modèle k.p; Fonction de Green hors-équilibre; Simulation de transistor type p; Transistor sans jonction; Phonon; Interaction électron-phonon; Transport de trou dans la bande de valence; K.p model; Nonequilibrium Green's Function; NEGF; Simulation of p-type transistor; Junctionless transistor; Phonon; Electron-phonon interaction; Hole transport in valence band

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APA (6th Edition):

Dib, E. (2013). Interaction électron-phonon dans le cadre du formalisme des fonctions de Green hors-équilibre : application à la modélisation de transistors MOS de type p : Electron-phonon interactions within the quantum formalism of Nonequilibrium Green’s Function applied to the simulation of p-type MOSFETs. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2013AIXM4357

Chicago Manual of Style (16th Edition):

Dib, Elias. “Interaction électron-phonon dans le cadre du formalisme des fonctions de Green hors-équilibre : application à la modélisation de transistors MOS de type p : Electron-phonon interactions within the quantum formalism of Nonequilibrium Green’s Function applied to the simulation of p-type MOSFETs.” 2013. Doctoral Dissertation, Aix Marseille Université. Accessed September 26, 2020. http://www.theses.fr/2013AIXM4357.

MLA Handbook (7th Edition):

Dib, Elias. “Interaction électron-phonon dans le cadre du formalisme des fonctions de Green hors-équilibre : application à la modélisation de transistors MOS de type p : Electron-phonon interactions within the quantum formalism of Nonequilibrium Green’s Function applied to the simulation of p-type MOSFETs.” 2013. Web. 26 Sep 2020.

Vancouver:

Dib E. Interaction électron-phonon dans le cadre du formalisme des fonctions de Green hors-équilibre : application à la modélisation de transistors MOS de type p : Electron-phonon interactions within the quantum formalism of Nonequilibrium Green’s Function applied to the simulation of p-type MOSFETs. [Internet] [Doctoral dissertation]. Aix Marseille Université 2013. [cited 2020 Sep 26]. Available from: http://www.theses.fr/2013AIXM4357.

Council of Science Editors:

Dib E. Interaction électron-phonon dans le cadre du formalisme des fonctions de Green hors-équilibre : application à la modélisation de transistors MOS de type p : Electron-phonon interactions within the quantum formalism of Nonequilibrium Green’s Function applied to the simulation of p-type MOSFETs. [Doctoral Dissertation]. Aix Marseille Université 2013. Available from: http://www.theses.fr/2013AIXM4357

10. Olar, Tetiana. Bewertung der elektronischen und chemischen Oberflächeneigenschaften von Kesterit.

Degree: 2017, Freie Universität Berlin

 Kesterit-basierte Dünnschicht-Solarzellen mit der allgemeinen Zusammensetzung Cu2ZnSn(Se,S)4 sind in den letzten Jahren Gegenstand intensiver Forschungs-und Entwicklungsarbeiten gewesen. Kesterit kann wegen der ungiftigen und in der… (more)

Subjects/Keywords: kesterite; solar cells; absorption spectroscopy; valence band; conduction band; 500 Naturwissenschaften und Mathematik::530 Physik::530 Physik

…high energy XPS 5.4. Determination of valence band edges by UPS 5.4.1. The valence band edge… …layer? What are the relative positions of conduction (CB) and valence band (VB… …valence band edge was done using Ultraviolet Photoelectron Spectroscopy (UPS). The… …spectroscopy built-in potential bend bending open circuit voltage valence band valence band maximum… …valence band offset X-ray absorption spectroscopy X-ray photoelectron spectroscopy conduction… 

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APA (6th Edition):

Olar, T. (2017). Bewertung der elektronischen und chemischen Oberflächeneigenschaften von Kesterit. (Thesis). Freie Universität Berlin. Retrieved from http://dx.doi.org/10.17169/refubium-6722

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Olar, Tetiana. “Bewertung der elektronischen und chemischen Oberflächeneigenschaften von Kesterit.” 2017. Thesis, Freie Universität Berlin. Accessed September 26, 2020. http://dx.doi.org/10.17169/refubium-6722.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Olar, Tetiana. “Bewertung der elektronischen und chemischen Oberflächeneigenschaften von Kesterit.” 2017. Web. 26 Sep 2020.

Vancouver:

Olar T. Bewertung der elektronischen und chemischen Oberflächeneigenschaften von Kesterit. [Internet] [Thesis]. Freie Universität Berlin; 2017. [cited 2020 Sep 26]. Available from: http://dx.doi.org/10.17169/refubium-6722.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Olar T. Bewertung der elektronischen und chemischen Oberflächeneigenschaften von Kesterit. [Thesis]. Freie Universität Berlin; 2017. Available from: http://dx.doi.org/10.17169/refubium-6722

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

11. Hong, Joon Goo. Spectroscopic Study of Hafnium Silicate Alloys prepared by RPECVD: Comparisons between Conduction/Valence Band Offset Energies and Optical Band Gaps.

Degree: PhD, Materials Science and Engineering, 2003, North Carolina State University

 Aggressive scaling of devices has continued to improve MOSFET transistor performance. As lateral device dimensions continue to decrease, gate oxide thickness must be scaled down.… (more)

Subjects/Keywords: RPE-CVD. MOCVD; local bond; FTIR; Poole-Frenkel; nitridation; temperature dependent CV; IV; CV; electrical property; transition metal oxide; Optical Band Gap; Valence band; Conduction band; Hafnium Silicate; Spectroscopy; High k gate oxide

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APA (6th Edition):

Hong, J. G. (2003). Spectroscopic Study of Hafnium Silicate Alloys prepared by RPECVD: Comparisons between Conduction/Valence Band Offset Energies and Optical Band Gaps. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/2978

Chicago Manual of Style (16th Edition):

Hong, Joon Goo. “Spectroscopic Study of Hafnium Silicate Alloys prepared by RPECVD: Comparisons between Conduction/Valence Band Offset Energies and Optical Band Gaps.” 2003. Doctoral Dissertation, North Carolina State University. Accessed September 26, 2020. http://www.lib.ncsu.edu/resolver/1840.16/2978.

MLA Handbook (7th Edition):

Hong, Joon Goo. “Spectroscopic Study of Hafnium Silicate Alloys prepared by RPECVD: Comparisons between Conduction/Valence Band Offset Energies and Optical Band Gaps.” 2003. Web. 26 Sep 2020.

Vancouver:

Hong JG. Spectroscopic Study of Hafnium Silicate Alloys prepared by RPECVD: Comparisons between Conduction/Valence Band Offset Energies and Optical Band Gaps. [Internet] [Doctoral dissertation]. North Carolina State University; 2003. [cited 2020 Sep 26]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2978.

Council of Science Editors:

Hong JG. Spectroscopic Study of Hafnium Silicate Alloys prepared by RPECVD: Comparisons between Conduction/Valence Band Offset Energies and Optical Band Gaps. [Doctoral Dissertation]. North Carolina State University; 2003. Available from: http://www.lib.ncsu.edu/resolver/1840.16/2978

12. Rachel, Reena Philip. Investigation of structural, optical and electrical properties and valence band splitting in cu-ln-se compounds.

Degree: Physics, 2004, Cochin University of Science and Technology

Investigations on thin films that started decades back due to scientific curiosity in the properties of a two-dimensional solid, has developed into a leading research… (more)

Subjects/Keywords: The Chalcopyrites; Valence band splitting in Cu-In-Se compounds; Electrical conductivity in CulnSe; Atomic force microscopy; Preparation and Structural characterization of OVC's; X-ray diffraction; X -ray photoelectron spectroscopy

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APA (6th Edition):

Rachel, R. P. (2004). Investigation of structural, optical and electrical properties and valence band splitting in cu-ln-se compounds. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/3620

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rachel, Reena Philip. “Investigation of structural, optical and electrical properties and valence band splitting in cu-ln-se compounds.” 2004. Thesis, Cochin University of Science and Technology. Accessed September 26, 2020. http://dyuthi.cusat.ac.in/purl/3620.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rachel, Reena Philip. “Investigation of structural, optical and electrical properties and valence band splitting in cu-ln-se compounds.” 2004. Web. 26 Sep 2020.

Vancouver:

Rachel RP. Investigation of structural, optical and electrical properties and valence band splitting in cu-ln-se compounds. [Internet] [Thesis]. Cochin University of Science and Technology; 2004. [cited 2020 Sep 26]. Available from: http://dyuthi.cusat.ac.in/purl/3620.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rachel RP. Investigation of structural, optical and electrical properties and valence band splitting in cu-ln-se compounds. [Thesis]. Cochin University of Science and Technology; 2004. Available from: http://dyuthi.cusat.ac.in/purl/3620

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

13. Πετράκη, Φωτεινή. Μελέτη διεπιφανειών λεπτών υμενίων φθαλοκυανινών με ανόργανα και οργανικά υποστρώματα με τη χρήση φασματοσκοπιών φωτοηλεκτρονίων.

Degree: 2008, University of Patras; Πανεπιστήμιο Πατρών

 Recently, there is a great interest in the application of organic semiconductor thin films as active layers in electronic devices, in order to improve their… (more)

Subjects/Keywords: Φθαλοκυανίνες μετάλλων; Διεπιφάνειες; Φασματοσκοπίες φωτοηλεκτρονίων; Ζώνη σθένους; Φράγματα έγχυσης φορέων; Έργο εξόδου; Ενεργειακό διάγραμμα; Metal phthalocyanines; Interfaces; Photoelectron spectroscopy; PEDOT:PSS; Valence band; Carrier injection barriers; Work function; Energy diagram

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Πετράκη, . . (2008). Μελέτη διεπιφανειών λεπτών υμενίων φθαλοκυανινών με ανόργανα και οργανικά υποστρώματα με τη χρήση φασματοσκοπιών φωτοηλεκτρονίων. (Thesis). University of Patras; Πανεπιστήμιο Πατρών. Retrieved from http://hdl.handle.net/10442/hedi/17925

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Πετράκη, Φωτεινή. “Μελέτη διεπιφανειών λεπτών υμενίων φθαλοκυανινών με ανόργανα και οργανικά υποστρώματα με τη χρήση φασματοσκοπιών φωτοηλεκτρονίων.” 2008. Thesis, University of Patras; Πανεπιστήμιο Πατρών. Accessed September 26, 2020. http://hdl.handle.net/10442/hedi/17925.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Πετράκη, Φωτεινή. “Μελέτη διεπιφανειών λεπτών υμενίων φθαλοκυανινών με ανόργανα και οργανικά υποστρώματα με τη χρήση φασματοσκοπιών φωτοηλεκτρονίων.” 2008. Web. 26 Sep 2020.

Vancouver:

Πετράκη . Μελέτη διεπιφανειών λεπτών υμενίων φθαλοκυανινών με ανόργανα και οργανικά υποστρώματα με τη χρήση φασματοσκοπιών φωτοηλεκτρονίων. [Internet] [Thesis]. University of Patras; Πανεπιστήμιο Πατρών; 2008. [cited 2020 Sep 26]. Available from: http://hdl.handle.net/10442/hedi/17925.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Πετράκη . Μελέτη διεπιφανειών λεπτών υμενίων φθαλοκυανινών με ανόργανα και οργανικά υποστρώματα με τη χρήση φασματοσκοπιών φωτοηλεκτρονίων. [Thesis]. University of Patras; Πανεπιστήμιο Πατρών; 2008. Available from: http://hdl.handle.net/10442/hedi/17925

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

14. Enkisch, Hartmut. Bloch k-selective resonant inelastic scattering of hard X-rays from valence electrons of 3d-metals.

Degree: 2001, Universität Dortmund

 Die Form von resonant angeregen Valenz-Fluoreszenzspektren hängt sowohl vonder Energie der einfallenden Strahlung, als auch von Größe und Richtung desImpulsübertrags q ab, falls harte Röntgenstrahlen… (more)

Subjects/Keywords: Abschirmung; Bloch-k-Impulserhaltung; Bloch k-momentumconservation; Bloch k-selectivity; Bloch-k-Selektivität; core hole; Cu; Cu; density of states; DFT; DFT; dipole approximation; Dipolnäherung; DOS; DOS; electronic band structure; elektronische Bandstruktur; Energieverlust; energy loss; KMM; KMM; KNN; KNN; LAPW; LAPW; line shape; Linienform; NiAl; NiAl; onset energy; Polarisationsabhängigkeit; polarization dependence; quadrupolartransition; Quadrupolübergang; radiativeAuger satellite; radiativerAugersatellite; resonanterRamaneffekt; resonantinelastic scattering; resonantinelastische Streuung; resonant Ramaneffect; RIXS; RIXS; Röntgenstreuung; Rumpf-Loch; Sättigungsenergie; saturationenergy; Schwellenenergie; screening; shake processes; Shakeprozesse; Shakeup; shakeup; spectator hole; supercell; Superzelle; Temperaturabhängigkeit; temperature dependence; threshold energy; transition matrix element; Übergangsmatrixelement; valence fluorescence; Valenzfluoreszenz; x-ray scattering; Zuschauerlochzustand; Zustandsdichte; 530

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Enkisch, H. (2001). Bloch k-selective resonant inelastic scattering of hard X-rays from valence electrons of 3d-metals. (Thesis). Universität Dortmund. Retrieved from http://hdl.handle.net/2003/2333

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Enkisch, Hartmut. “Bloch k-selective resonant inelastic scattering of hard X-rays from valence electrons of 3d-metals.” 2001. Thesis, Universität Dortmund. Accessed September 26, 2020. http://hdl.handle.net/2003/2333.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Enkisch, Hartmut. “Bloch k-selective resonant inelastic scattering of hard X-rays from valence electrons of 3d-metals.” 2001. Web. 26 Sep 2020.

Vancouver:

Enkisch H. Bloch k-selective resonant inelastic scattering of hard X-rays from valence electrons of 3d-metals. [Internet] [Thesis]. Universität Dortmund; 2001. [cited 2020 Sep 26]. Available from: http://hdl.handle.net/2003/2333.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Enkisch H. Bloch k-selective resonant inelastic scattering of hard X-rays from valence electrons of 3d-metals. [Thesis]. Universität Dortmund; 2001. Available from: http://hdl.handle.net/2003/2333

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. Enkisch, Hartmut. Bloch k-selective resonant inelastic scattering of hard X-rays from valence electrons of 3d-metals.

Degree: 2002, Technische Universität Dortmund

 The shape of resonantly excited valence fluorescence spectra depends on theenergy of the incident radiation as well as on the size and the direction ofthe… (more)

Subjects/Keywords: Cu; NiAl; Valenzfluoreszenz; Linienform; Röntgenstreuung; resonantinelastische Streuung; RIXS; Bloch-k-Selektivität; Bloch-k-Impulserhaltung; elektronische Bandstruktur; DFT; LAPW; Temperaturabhängigkeit; Abschirmung; Rumpf-Loch; Superzelle; Dipolnäherung; Quadrupolübergang; Übergangsmatrixelement; Polarisationsabhängigkeit; radiativerAugersatellite; Shakeprozesse; KMM; KNN; Energieverlust; resonanterRamaneffekt; Zustandsdichte; DOS; Schwellenenergie; Sättigungsenergie; Zuschauerlochzustand; Shakeup; Cu; NiAl; valence fluorescence; line shape; x-ray scattering; resonantinelastic scattering; RIXS; Bloch k-selectivity; Bloch k-momentumconservation; electronic band structure; DFT; LAPW; temperature dependence; screening; core hole; supercell; dipole approximation; quadrupolartransition; transition matrix element; polarization dependence; radiativeAuger satellite; shake processes; KMM; KNN; energy loss; resonant Ramaneffect; density of states; DOS; threshold energy; onset energy; saturationenergy; spectator hole; shakeup; 530

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Enkisch, H. (2002). Bloch k-selective resonant inelastic scattering of hard X-rays from valence electrons of 3d-metals. (Doctoral Dissertation). Technische Universität Dortmund. Retrieved from http://dx.doi.org/10.17877/DE290R-1205

Chicago Manual of Style (16th Edition):

Enkisch, Hartmut. “Bloch k-selective resonant inelastic scattering of hard X-rays from valence electrons of 3d-metals.” 2002. Doctoral Dissertation, Technische Universität Dortmund. Accessed September 26, 2020. http://dx.doi.org/10.17877/DE290R-1205.

MLA Handbook (7th Edition):

Enkisch, Hartmut. “Bloch k-selective resonant inelastic scattering of hard X-rays from valence electrons of 3d-metals.” 2002. Web. 26 Sep 2020.

Vancouver:

Enkisch H. Bloch k-selective resonant inelastic scattering of hard X-rays from valence electrons of 3d-metals. [Internet] [Doctoral dissertation]. Technische Universität Dortmund; 2002. [cited 2020 Sep 26]. Available from: http://dx.doi.org/10.17877/DE290R-1205.

Council of Science Editors:

Enkisch H. Bloch k-selective resonant inelastic scattering of hard X-rays from valence electrons of 3d-metals. [Doctoral Dissertation]. Technische Universität Dortmund; 2002. Available from: http://dx.doi.org/10.17877/DE290R-1205

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