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You searched for subject:(Twisted multilayer graphene). Showing records 1 – 2 of 2 total matches.

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Georgia Tech

1. Xian, Lede. Electronic structure and interlayer coupling in twisted multilayer graphene.

Degree: PhD, Physics, 2014, Georgia Tech

It has been shown recently that high-quality epitaxial graphene (EPG) can be grown on the SiC substrate that exhibits interesting physical properties and has great advantages for varies device applications. In particular, the multilayer graphene films grown on the C-face show rotational disorder. It is expected that the twisted layers exhibit unique new physics that is distinct from that of either single layer graphene or graphite. In this work, by combining density functional and tight-binding model calculations, we investigate the electric field and doping effects on twisted bilayer graphene (TBG), multiple layer effects on twisted triple-layer graphene, and wave packet propagation properties of TBG. Though these studies, we obtain a comprehensive description of the interesting interlayer interaction in this twisted multilayer graphene system. Advisors/Committee Members: Chou, Mei-Yin (advisor), Zangwill, Andrew (committee member), Conrad, Edward H. (committee member), First, Phillip N. (committee member), Bongiorno, Angelo (committee member).

Subjects/Keywords: Twisted multilayer graphene; Density functional theory; Tight-binding model; Electronic structure; Graphene; Mathematical models

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APA (6th Edition):

Xian, L. (2014). Electronic structure and interlayer coupling in twisted multilayer graphene. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/51811

Chicago Manual of Style (16th Edition):

Xian, Lede. “Electronic structure and interlayer coupling in twisted multilayer graphene.” 2014. Doctoral Dissertation, Georgia Tech. Accessed September 23, 2019. http://hdl.handle.net/1853/51811.

MLA Handbook (7th Edition):

Xian, Lede. “Electronic structure and interlayer coupling in twisted multilayer graphene.” 2014. Web. 23 Sep 2019.

Vancouver:

Xian L. Electronic structure and interlayer coupling in twisted multilayer graphene. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Sep 23]. Available from: http://hdl.handle.net/1853/51811.

Council of Science Editors:

Xian L. Electronic structure and interlayer coupling in twisted multilayer graphene. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/51811

2. Habib, K M Masum. Quantum Transport in Misoriented Layers of Graphene: Physics and Device Applications.

Degree: Electrical Engineering, 2013, University of California – Riverside

Graphene is one of the promising candidates for the channel material of future electronic devices. Negligible spin-orbit coupling combined with high carrier mobility and long mean free path make graphene a very attractive material for post CMOS device applications. The individual layers in a misoriented or twisted stack of graphene behave as if they were electronically decoupled due to destructive quantum interference. The interlayer coupling is increased and the Fermi velocity is reduced in presence of a vertical electric field and negative differential conductance is predicted at small biases. These properties of misoriented graphene can potentially be exploited in novel switching mechanisms. In order to utilize these exceptional properties in device applications, it is important to understand if these phenomena still hold in the limit of nanoscaled device dimensions.Our numerical simulations show that the coherent electronic decoupling between the layers of two-dimensional misoriented bilayer graphene is still present in lower dimensions when the misoriented region is reduced to the nanometer scale. We found a novel current switching mechanism in nanoscaled misoriented graphene layers that utilizes the voltage controlled quantum interference of electrons to achieve large, rapid modulation of the current with small voltage swings. Utilizing the voltage controlled quantum interference between standing electronic waves we demonstrated an oscillatory current voltage response suitable for multi-state switching. This switching mechanism does not rely on a bandgap or a potential barrier. Thus, it is not limited by the thermal limitation of 60 mV/dec.The coherent, interlayer resistance of a misoriented, rotated interface in vertically stacked graphene is determined for a variety of misorientation angles. The fundamentally limiting quantum-resistance of the ideal interface with θ = 0o is on the order of 10<super>−3</super> Ωμm2. For small rotations, the coherent interlayer resistance is a strong function of the Fermi energy, and it exponentially approaches the ideal quantum resistance at energies away from the charge neutral point. At room temperature, the total inter-layer resistance can still be sensitive to the rotation angle changing one to two orders of magnitude as the angle changes by a few degrees. Over a range of intermediate angles, the coherent resistance is much larger than the phonon-mediated resistance which results in a relatively constant total resistance on the order of 100 Ωμm2.

Subjects/Keywords: Electrical engineering; Contact Resistance; Graphene; Misorientation; Multilayer; Quantum Transport; Twisted

…The individual layers in a misoriented or twisted stack of graphene behave as if they were… …xvii 69 5.3 Zero temperature coherent contact resistance of twisted bilayer graphene as a… …temperature coherent contact resistance of twisted bilayer graphene as a function of Fermi Energy… …resistance of twisted bilayer graphene as a function of Fermi energy for different rotation angles… …x28;Rtot = Rc ||Rp ) as functions of cell size of twisted graphene at EF = 0.26 eV and… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Habib, K. M. M. (2013). Quantum Transport in Misoriented Layers of Graphene: Physics and Device Applications. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/7pw37822

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Habib, K M Masum. “Quantum Transport in Misoriented Layers of Graphene: Physics and Device Applications.” 2013. Thesis, University of California – Riverside. Accessed September 23, 2019. http://www.escholarship.org/uc/item/7pw37822.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Habib, K M Masum. “Quantum Transport in Misoriented Layers of Graphene: Physics and Device Applications.” 2013. Web. 23 Sep 2019.

Vancouver:

Habib KMM. Quantum Transport in Misoriented Layers of Graphene: Physics and Device Applications. [Internet] [Thesis]. University of California – Riverside; 2013. [cited 2019 Sep 23]. Available from: http://www.escholarship.org/uc/item/7pw37822.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Habib KMM. Quantum Transport in Misoriented Layers of Graphene: Physics and Device Applications. [Thesis]. University of California – Riverside; 2013. Available from: http://www.escholarship.org/uc/item/7pw37822

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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