subject:(Transistors)

Oregon State University

1. Cheung, David Kin-Poon. Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors.

Degree: MS, Electrical and Electronics Engineering, 1967, Oregon State University

URL: http://hdl.handle.net/1957/47002

► Four methods for the simultaneous fabrication of field-effect and bipolar transistors have been investigated. The basic process involves obtaining two different junction depths by a… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Cheung, D. K. (1967). Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/47002

Chicago Manual of Style (16^th Edition):

Cheung, David Kin-Poon. “Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors.” 1967. Masters Thesis, Oregon State University. Accessed February 25, 2020. http://hdl.handle.net/1957/47002.

MLA Handbook (7^th Edition):

Cheung, David Kin-Poon. “Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors.” 1967. Web. 25 Feb 2020.

Vancouver:

Cheung DK. Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors. [Internet] [Masters thesis]. Oregon State University; 1967. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1957/47002.

Council of Science Editors:

Cheung DK. Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors. [Masters Thesis]. Oregon State University; 1967. Available from: http://hdl.handle.net/1957/47002

Rochester Institute of Technology

2. Mauersberg, Diane. Rapid thermal processing of polysilicon emitter transistors.

Degree: Electrical Engineering, 1994, Rochester Institute of Technology

URL: https://scholarworks.rit.edu/theses/5603

► The recent developments in rapid thermal processing in the past several years have shown it to have much potential in achieving full dopant activation of… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Mauersberg, D. (1994). Rapid thermal processing of polysilicon emitter transistors. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/5603

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Mauersberg, Diane. “Rapid thermal processing of polysilicon emitter transistors.” 1994. Thesis, Rochester Institute of Technology. Accessed February 25, 2020. https://scholarworks.rit.edu/theses/5603.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Mauersberg, Diane. “Rapid thermal processing of polysilicon emitter transistors.” 1994. Web. 25 Feb 2020.

Vancouver:

Mauersberg D. Rapid thermal processing of polysilicon emitter transistors. [Internet] [Thesis]. Rochester Institute of Technology; 1994. [cited 2020 Feb 25]. Available from: https://scholarworks.rit.edu/theses/5603.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mauersberg D. Rapid thermal processing of polysilicon emitter transistors. [Thesis]. Rochester Institute of Technology; 1994. Available from: https://scholarworks.rit.edu/theses/5603

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Oregon State University

3. Khanna, Satya Pal. The concentration profile of diffused radio-active antimony in a silicon-dioxide layer.

Degree: MS, Electrical Engineering, 1963, Oregon State University

URL: http://hdl.handle.net/1957/48816

► The selective masking effect of a thermally grown layer of silicon dioxide has been widely utilized as a technique for controlling the geometry and impurity… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Khanna, S. P. (1963). The concentration profile of diffused radio-active antimony in a silicon-dioxide layer. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/48816

Chicago Manual of Style (16^th Edition):

Khanna, Satya Pal. “The concentration profile of diffused radio-active antimony in a silicon-dioxide layer.” 1963. Masters Thesis, Oregon State University. Accessed February 25, 2020. http://hdl.handle.net/1957/48816.

MLA Handbook (7^th Edition):

Khanna, Satya Pal. “The concentration profile of diffused radio-active antimony in a silicon-dioxide layer.” 1963. Web. 25 Feb 2020.

Vancouver:

Khanna SP. The concentration profile of diffused radio-active antimony in a silicon-dioxide layer. [Internet] [Masters thesis]. Oregon State University; 1963. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1957/48816.

Council of Science Editors:

Khanna SP. The concentration profile of diffused radio-active antimony in a silicon-dioxide layer. [Masters Thesis]. Oregon State University; 1963. Available from: http://hdl.handle.net/1957/48816

Oregon State University

4. Richardson, Dennis W. Predicting transistor switching time.

Degree: MS, Electrical Engineering, 1963, Oregon State University

URL: http://hdl.handle.net/1957/48721

► This thesis is a development of two sets of equations predicting the switching times of a saturated transistor. The first set of equations defines the… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Richardson, D. W. (1963). Predicting transistor switching time. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/48721

Chicago Manual of Style (16^th Edition):

Richardson, Dennis W. “Predicting transistor switching time.” 1963. Masters Thesis, Oregon State University. Accessed February 25, 2020. http://hdl.handle.net/1957/48721.

MLA Handbook (7^th Edition):

Richardson, Dennis W. “Predicting transistor switching time.” 1963. Web. 25 Feb 2020.

Vancouver:

Richardson DW. Predicting transistor switching time. [Internet] [Masters thesis]. Oregon State University; 1963. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1957/48721.

Council of Science Editors:

Richardson DW. Predicting transistor switching time. [Masters Thesis]. Oregon State University; 1963. Available from: http://hdl.handle.net/1957/48721

Oregon State University

5. Ballieu, Howard Lee. The binistor as an electronic switching element.

Degree: MS, Electrical Engineering, 1961, Oregon State University

URL: http://hdl.handle.net/1957/49347

Subjects/Keywords: Transistors

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APA (6^th Edition):

Ballieu, H. L. (1961). The binistor as an electronic switching element. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/49347

Chicago Manual of Style (16^th Edition):

Ballieu, Howard Lee. “The binistor as an electronic switching element.” 1961. Masters Thesis, Oregon State University. Accessed February 25, 2020. http://hdl.handle.net/1957/49347.

MLA Handbook (7^th Edition):

Ballieu, Howard Lee. “The binistor as an electronic switching element.” 1961. Web. 25 Feb 2020.

Vancouver:

Ballieu HL. The binistor as an electronic switching element. [Internet] [Masters thesis]. Oregon State University; 1961. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1957/49347.

Council of Science Editors:

Ballieu HL. The binistor as an electronic switching element. [Masters Thesis]. Oregon State University; 1961. Available from: http://hdl.handle.net/1957/49347

Oregon State University

6. Smith, Roy John. The protection of semiconductor devices from electrical transients.

Degree: MS, Electrical Engineering, 1962, Oregon State University

URL: http://hdl.handle.net/1957/49973

Subjects/Keywords: Transistors

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APA (6^th Edition):

Smith, R. J. (1962). The protection of semiconductor devices from electrical transients. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/49973

Chicago Manual of Style (16^th Edition):

Smith, Roy John. “The protection of semiconductor devices from electrical transients.” 1962. Masters Thesis, Oregon State University. Accessed February 25, 2020. http://hdl.handle.net/1957/49973.

MLA Handbook (7^th Edition):

Smith, Roy John. “The protection of semiconductor devices from electrical transients.” 1962. Web. 25 Feb 2020.

Vancouver:

Smith RJ. The protection of semiconductor devices from electrical transients. [Internet] [Masters thesis]. Oregon State University; 1962. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1957/49973.

Council of Science Editors:

Smith RJ. The protection of semiconductor devices from electrical transients. [Masters Thesis]. Oregon State University; 1962. Available from: http://hdl.handle.net/1957/49973

Oregon State University

7. Tao, David Ming-Shih. A complementary MOS random-access-memory cell wth double-diffused MOS transistors.

Degree: PhD, Electrical and Electronics Engineering, 1972, Oregon State University

URL: http://hdl.handle.net/1957/44800

► The use of double-diffused n-type MOS transistor (DN-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of this investigation. DN-MOS transistors… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Tao, D. M. (1972). A complementary MOS random-access-memory cell wth double-diffused MOS transistors. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/44800

Chicago Manual of Style (16^th Edition):

Tao, David Ming-Shih. “A complementary MOS random-access-memory cell wth double-diffused MOS transistors.” 1972. Doctoral Dissertation, Oregon State University. Accessed February 25, 2020. http://hdl.handle.net/1957/44800.

MLA Handbook (7^th Edition):

Tao, David Ming-Shih. “A complementary MOS random-access-memory cell wth double-diffused MOS transistors.” 1972. Web. 25 Feb 2020.

Vancouver:

Tao DM. A complementary MOS random-access-memory cell wth double-diffused MOS transistors. [Internet] [Doctoral dissertation]. Oregon State University; 1972. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1957/44800.

Council of Science Editors:

Tao DM. A complementary MOS random-access-memory cell wth double-diffused MOS transistors. [Doctoral Dissertation]. Oregon State University; 1972. Available from: http://hdl.handle.net/1957/44800

Oregon State University

8. Limvorapun, Thawee. The MOS tetrode transistor.

Degree: MS, Electrical and Electronics Engineering, 1972, Oregon State University

URL: http://hdl.handle.net/1957/45372

► The MOS tetrode transistor is studied in this project. This device is ideally suited for high frequency and switching application. In effect it is the… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Limvorapun, T. (1972). The MOS tetrode transistor. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/45372

Chicago Manual of Style (16^th Edition):

Limvorapun, Thawee. “The MOS tetrode transistor.” 1972. Masters Thesis, Oregon State University. Accessed February 25, 2020. http://hdl.handle.net/1957/45372.

MLA Handbook (7^th Edition):

Limvorapun, Thawee. “The MOS tetrode transistor.” 1972. Web. 25 Feb 2020.

Vancouver:

Limvorapun T. The MOS tetrode transistor. [Internet] [Masters thesis]. Oregon State University; 1972. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1957/45372.

Council of Science Editors:

Limvorapun T. The MOS tetrode transistor. [Masters Thesis]. Oregon State University; 1972. Available from: http://hdl.handle.net/1957/45372

Oregon State University

9. Hwang, Yun-sheng. Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors.

Degree: MS, Electrical and Electronics Engineering, 1970, Oregon State University

URL: http://hdl.handle.net/1957/45752

► The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices made with single-layer aluminum-oxide films and double-layer films which were made by… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Hwang, Y. (1970). Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/45752

Chicago Manual of Style (16^th Edition):

Hwang, Yun-sheng. “Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors.” 1970. Masters Thesis, Oregon State University. Accessed February 25, 2020. http://hdl.handle.net/1957/45752.

MLA Handbook (7^th Edition):

Hwang, Yun-sheng. “Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors.” 1970. Web. 25 Feb 2020.

Vancouver:

Hwang Y. Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors. [Internet] [Masters thesis]. Oregon State University; 1970. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1957/45752.

Council of Science Editors:

Hwang Y. Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors. [Masters Thesis]. Oregon State University; 1970. Available from: http://hdl.handle.net/1957/45752

Oregon State University

10. Chou, Pen Chao. A MOS-transistor with submicron, and graded channel.

Degree: PhD, Electrical and Electronics Engineering, 1971, Oregon State University

URL: http://hdl.handle.net/1957/46003

► The theoretical aspects and fabrication techniques of a new surface field-effect transistor were investigated. The new MOS-transistor uses a three-layer structure similar to those found… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Chou, P. C. (1971). A MOS-transistor with submicron, and graded channel. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/46003

Chicago Manual of Style (16^th Edition):

Chou, Pen Chao. “A MOS-transistor with submicron, and graded channel.” 1971. Doctoral Dissertation, Oregon State University. Accessed February 25, 2020. http://hdl.handle.net/1957/46003.

MLA Handbook (7^th Edition):

Chou, Pen Chao. “A MOS-transistor with submicron, and graded channel.” 1971. Web. 25 Feb 2020.

Vancouver:

Chou PC. A MOS-transistor with submicron, and graded channel. [Internet] [Doctoral dissertation]. Oregon State University; 1971. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1957/46003.

Council of Science Editors:

Chou PC. A MOS-transistor with submicron, and graded channel. [Doctoral Dissertation]. Oregon State University; 1971. Available from: http://hdl.handle.net/1957/46003

Oregon State University

11. Delzer, Dennis Richard. Vacuum evaporated dielectrics in MOS structures.

Degree: PhD, Electrical and Electronics Engineering, 1968, Oregon State University

URL: http://hdl.handle.net/1957/46875

► Vacuum evaporated dielectrics for use in MOS structures were studied in this research project. Dielectric films were deposited on substrates by electron bombardment evaporation of… (more)

▼ Vacuum evaporated dielectrics for use in MOS structures were studied in this research project. Dielectric films were deposited on substrates by electron bombardment evaporation of sapphire and quartz source materials. These deposited films were studied using infrared spectroscopy, index of refraction, density, and dielectric constant measurements. Etching tests were also conducted on the dielectric films. Annealing these films was also tried. From the results of these tests, it was concluded that suitable aluminum oxide and silicon dioxide films can be obtained by e-Gun evaporation. The best results were obtained for slowly evaporated films on substrates heated above 200° C. Better films were obtained after annealing for ten minutes at 1100°C in dry nitrogen. The diffusion masking properties of the e-Gun evaporated silicon dioxide and aluminum oxide films were studied. The evaporated films were tested for the masking of phosphorus and boron diffusion into silicon, of gallium and indium diffusion into germanium, and of zinc diffusion into gallium arsenide. From the results of these tests, it was concluded that both of these e-Gun evaporated films will effectively mask the diffusion of all the above mentioned impurities. The aluminum oxide films were better diffusion masks because they were more impervious to the diffusion of impurities. It required significantly thinner films of aluminum oxide to effectively mask the diffusion of all the impurities studied. The e-Gun evaporated films were used to fabricate MOS capacitors. Both aluminum oxide and silicon dioxide films produced good capacitors. The threshold voltages and surface-state densities of the capacitors were studied. Aluminum oxide films produced MOS capacitors which were relatively stable under bias-temperature tests. The e-Gun evaporated films were used in the fabrication of MOS transistors. The electrical properties of these transistors were studied using I-V characteristics. Both dielectrics produced good MOS transistors. Aluminum oxide films produced transistors with transconductances which were twice as large as the transconductances of the transistors with silicon dioxide films of the same thickness. The aluminum oxide films produced transistors which were relatively stable under bias-temperature tests, a possible reason for this being that impurity ions are less mobile in it than in silicon dioxide. Advisors/Committee Members: Looney, James C. (advisor).

Subjects/Keywords: Transistors

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APA (6^th Edition):

Delzer, D. R. (1968). Vacuum evaporated dielectrics in MOS structures. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/46875

Chicago Manual of Style (16^th Edition):

Delzer, Dennis Richard. “Vacuum evaporated dielectrics in MOS structures.” 1968. Doctoral Dissertation, Oregon State University. Accessed February 25, 2020. http://hdl.handle.net/1957/46875.

MLA Handbook (7^th Edition):

Delzer, Dennis Richard. “Vacuum evaporated dielectrics in MOS structures.” 1968. Web. 25 Feb 2020.

Vancouver:

Delzer DR. Vacuum evaporated dielectrics in MOS structures. [Internet] [Doctoral dissertation]. Oregon State University; 1968. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1957/46875.

Council of Science Editors:

Delzer DR. Vacuum evaporated dielectrics in MOS structures. [Doctoral Dissertation]. Oregon State University; 1968. Available from: http://hdl.handle.net/1957/46875

University of British Columbia

12. Cameron, Frank Charles. Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier .

Degree: 1962, University of British Columbia

URL: http://hdl.handle.net/2429/39615

► Bruun and Grinich have previously described video amplifier designs using resistance-capacitance feedback in the emitter lead for stages in the common-emitter configuration. Diffusion-type alloy-junction transistors… (more)

▼ Bruun and Grinich have previously described video amplifier designs using resistance-capacitance feedback in the emitter lead for stages in the common-emitter configuration. Diffusion-type alloy-junction transistors which are well described by the Johnson-Giacoletto hybrid-π equivalent circuit, were used in both cases. The amplifier cascades described by Grinich produced Butterworth-type responses through use of pole-zero cancellation. The research reported here is concerned with an alternative design method using an iterative numerical procedure to obtain broadband amplifier cascades without the use of pole-zero cancellation. In addition, the method is sufficiently general to include both drift- and diffusion-type alloy-junction transistors. Equivalent circuits of the Johnson-Giacoletto hybrid-π type are reviewed and modifications necessary to treat emitter feedback amplifiers using the newer types of high-frequency transistors are developed. Transfer functions for stages and cascades of stages using either drift- or diffusion-types of transistors in the common-emitter configuration with emitter feedback are given. Special attention is given to the property of this type of amplifier that the zeros and poles of the transfer function are interdependent. Suitable parameters for defining this dependence are developed, and the problem of synthesizing for flat amplitude response, in spite of this dependence, is described. A numerical iterative method of solution is proposed. A numerical example of a three-stage amplifier design using a 2N384 p-n-p drift transistor for maximally-flat amplitude response with a passband from 40 cps to 6.5 Mc is given. The design is compared with an equivalent amplifier of the Butter-worth type obtained by the Grinich method. It is shown that an optimum interstage resistance giving maximum dc amplification exists when using this iterative method, but that there is no true optimum for Grinich designs. The theoretical designs obtained by the iterative method give an amplification of 49.6 db, 7.6 db greater than by the Grinich method for the particular value of interstage resistance used (300Ω). Phase linearity, delay, and step-response overshoot are comparable for the two designs. The numerical method shows good convergence properties, except when designing for very small or very large bandwidths, or for very small dc emitter currents or interstage resistances. An amplifier built according to the theoretical design, but fitted with an input impedance-matching pad and an output emitter-follower pair for connection to a 50-Ω line, is described. Test results indicate that the design values obtained using the modified Johnson-Giacoletto hybrid-π equivalent circuit and the iterative method are sufficiently accurate for construction purposes and that very little adjustment is necessary. Suggestions for further development of the method are given.

Subjects/Keywords: Transistors

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APA (6^th Edition):

Cameron, F. C. (1962). Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/39615

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Cameron, Frank Charles. “Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier .” 1962. Thesis, University of British Columbia. Accessed February 25, 2020. http://hdl.handle.net/2429/39615.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Cameron, Frank Charles. “Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier .” 1962. Web. 25 Feb 2020.

Vancouver:

Cameron FC. Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier . [Internet] [Thesis]. University of British Columbia; 1962. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/2429/39615.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cameron FC. Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier . [Thesis]. University of British Columbia; 1962. Available from: http://hdl.handle.net/2429/39615

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of British Columbia

13. Hatton, Walter Lewis. Noise figure of the transistor amplifier .

Degree: 1951, University of British Columbia

URL: http://hdl.handle.net/2429/40899

► The noise figure of the transistor amplifier is of special interest since the large quantity of excess noise present limits the usefulness of the transistor… (more)

▼ The noise figure of the transistor amplifier is of special interest since the large quantity of excess noise present limits the usefulness of the transistor as a low-noise amplifier. While the equivalent noise voltages generated in the emitter and collector leads vary inversely with frequency, the noise figure does not. This variation from the inverse frequency characteristic is produced by the decrease of the effective gain at higher frequencies. The subject of this thesis is the investigation of this variation. The variation of the noise figure with frequency has been measured for several different transistors, with varying emitter and collector currents. Equivalent diagrams have been suggested which explain the variation of the noise figure with frequency if transit time dispersion is negligible. For low frequencies, the noise figure is given by, (Formula omitted) Variation of the noise figure due to the stray capacities is given approximately by (Formula omitted) The variation, due to transit time effects , ignoring transit time dispersion , i s (Formula omitted) The operating conditions for minimum noise figure of the transistor amplifier are dependent on the frequency. At low frequencies, a low value of emitter current should be used, and the lowest possible value of collector voltage which is compatible with the desired gain. At higher frequencies a low value of emitter current should also be used but the value of the collector voltage is determined by the frequency. The higher the frequency, the higher will be the required collector voltage. The best noise figures at higher frequencies will be obtained with transistors with the following characteristics: (i) ʳm large (ii) close spacing of point contacts (iii) high value of resistivity (iv) small transit time dispersion. Equivalent diagrams have been suggested which parially account for the variation of the noise figure with frequency. It has been suggested that transit time dispersion would explain the remaining deviation of the noise figure from the inverse frequency characteristic.

Subjects/Keywords: Transistors

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APA (6^th Edition):

Hatton, W. L. (1951). Noise figure of the transistor amplifier . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/40899

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Hatton, Walter Lewis. “Noise figure of the transistor amplifier .” 1951. Thesis, University of British Columbia. Accessed February 25, 2020. http://hdl.handle.net/2429/40899.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Hatton, Walter Lewis. “Noise figure of the transistor amplifier .” 1951. Web. 25 Feb 2020.

Vancouver:

Hatton WL. Noise figure of the transistor amplifier . [Internet] [Thesis]. University of British Columbia; 1951. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/2429/40899.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hatton WL. Noise figure of the transistor amplifier . [Thesis]. University of British Columbia; 1951. Available from: http://hdl.handle.net/2429/40899

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Arizona

14. Nygaard, Paul Andrew, 1940-. Models of the drift transistor .

Degree: 1964, University of Arizona

URL: http://hdl.handle.net/10150/319533

Subjects/Keywords: Transistors.

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APA (6^th Edition):

Nygaard, Paul Andrew, 1. (1964). Models of the drift transistor . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/319533

Chicago Manual of Style (16^th Edition):

Nygaard, Paul Andrew, 1940-. “Models of the drift transistor .” 1964. Masters Thesis, University of Arizona. Accessed February 25, 2020. http://hdl.handle.net/10150/319533.

MLA Handbook (7^th Edition):

Nygaard, Paul Andrew, 1940-. “Models of the drift transistor .” 1964. Web. 25 Feb 2020.

Vancouver:

Nygaard, Paul Andrew 1. Models of the drift transistor . [Internet] [Masters thesis]. University of Arizona; 1964. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10150/319533.

Council of Science Editors:

Nygaard, Paul Andrew 1. Models of the drift transistor . [Masters Thesis]. University of Arizona; 1964. Available from: http://hdl.handle.net/10150/319533

University of Arizona

15. Latorre, Victor Robert, 1931-. Frequency variations of transistor parameters .

Degree: 1956, University of Arizona

URL: http://hdl.handle.net/10150/319587

Subjects/Keywords: Transistors.

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APA (6^th Edition):

Latorre, Victor Robert, 1. (1956). Frequency variations of transistor parameters . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/319587

Chicago Manual of Style (16^th Edition):

Latorre, Victor Robert, 1931-. “Frequency variations of transistor parameters .” 1956. Masters Thesis, University of Arizona. Accessed February 25, 2020. http://hdl.handle.net/10150/319587.

MLA Handbook (7^th Edition):

Latorre, Victor Robert, 1931-. “Frequency variations of transistor parameters .” 1956. Web. 25 Feb 2020.

Vancouver:

Latorre, Victor Robert 1. Frequency variations of transistor parameters . [Internet] [Masters thesis]. University of Arizona; 1956. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10150/319587.

Council of Science Editors:

Latorre, Victor Robert 1. Frequency variations of transistor parameters . [Masters Thesis]. University of Arizona; 1956. Available from: http://hdl.handle.net/10150/319587

Michigan State University

16. Singh, Skuhbir, 1936-. Current saturation mechanism in field-effect transistors.

Degree: PhD, Department of Electrical Engineering and Systems Science, 1970, Michigan State University

URL: http://etd.lib.msu.edu/islandora/object/etd:36927

Subjects/Keywords: Transistors

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APA (6^th Edition):

Singh, Skuhbir, 1. (1970). Current saturation mechanism in field-effect transistors. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:36927

Chicago Manual of Style (16^th Edition):

Singh, Skuhbir, 1936-. “Current saturation mechanism in field-effect transistors.” 1970. Doctoral Dissertation, Michigan State University. Accessed February 25, 2020. http://etd.lib.msu.edu/islandora/object/etd:36927.

MLA Handbook (7^th Edition):

Singh, Skuhbir, 1936-. “Current saturation mechanism in field-effect transistors.” 1970. Web. 25 Feb 2020.

Vancouver:

Singh, Skuhbir 1. Current saturation mechanism in field-effect transistors. [Internet] [Doctoral dissertation]. Michigan State University; 1970. [cited 2020 Feb 25]. Available from: http://etd.lib.msu.edu/islandora/object/etd:36927.

Council of Science Editors:

Singh, Skuhbir 1. Current saturation mechanism in field-effect transistors. [Doctoral Dissertation]. Michigan State University; 1970. Available from: http://etd.lib.msu.edu/islandora/object/etd:36927

Michigan State University

17. ElSherif, Helmy Hassan. Transistor large signal analysis.

Degree: PhD, Department of Electrical Engineering, 1964, Michigan State University

URL: http://etd.lib.msu.edu/islandora/object/etd:39847

Subjects/Keywords: Transistors

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APA (6^th Edition):

ElSherif, H. H. (1964). Transistor large signal analysis. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:39847

Chicago Manual of Style (16^th Edition):

ElSherif, Helmy Hassan. “Transistor large signal analysis.” 1964. Doctoral Dissertation, Michigan State University. Accessed February 25, 2020. http://etd.lib.msu.edu/islandora/object/etd:39847.

MLA Handbook (7^th Edition):

ElSherif, Helmy Hassan. “Transistor large signal analysis.” 1964. Web. 25 Feb 2020.

Vancouver:

ElSherif HH. Transistor large signal analysis. [Internet] [Doctoral dissertation]. Michigan State University; 1964. [cited 2020 Feb 25]. Available from: http://etd.lib.msu.edu/islandora/object/etd:39847.

Council of Science Editors:

ElSherif HH. Transistor large signal analysis. [Doctoral Dissertation]. Michigan State University; 1964. Available from: http://etd.lib.msu.edu/islandora/object/etd:39847

Oregon State University

18. Gorecki, Jenna Y. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.

Degree: MS, Chemical Engineering, 2016, Oregon State University

URL: http://hdl.handle.net/1957/59314

► Inkjet-printed p-type copper(I) iodide-based TFTs were successfully fabricated. As-printed copper(I) halide semiconductor films, such as CuI, CuBrI, and CuClI, were used as p-type active channel… (more)

Subjects/Keywords: Thin-Film Transistors; Thin film transistors

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APA (6^th Edition):

Gorecki, J. Y. (2016). Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/59314

Chicago Manual of Style (16^th Edition):

Gorecki, Jenna Y. “Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.” 2016. Masters Thesis, Oregon State University. Accessed February 25, 2020. http://hdl.handle.net/1957/59314.

MLA Handbook (7^th Edition):

Gorecki, Jenna Y. “Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.” 2016. Web. 25 Feb 2020.

Vancouver:

Gorecki JY. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. [Internet] [Masters thesis]. Oregon State University; 2016. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1957/59314.

Council of Science Editors:

Gorecki JY. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. [Masters Thesis]. Oregon State University; 2016. Available from: http://hdl.handle.net/1957/59314

University of Johannesburg

19. Prest, Rory Bruce. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.

Degree: 2014, University of Johannesburg

URL: http://hdl.handle.net/10210/9511

►

D.Ing. (Electrical & Electronic Engineering )

In recent years, bipolar transistors have become available with large current ratings (300A-1DODA). The purpose 01 this study is… (more)

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D.Ing. (Electrical & Electronic Engineering )

In recent years, bipolar transistors have become available with large current ratings (300A-1DODA). The purpose 01 this study is to analyse the modelling 01 these devices, with a view to applying the results to detailed power electronic circuit design (for example base drive and snubber circuits). In contrast to the many curve-filling approaches existing in this field, a model which correctly represents the physical mechanisms is desirable, in order to characterise the device behaviour with a minimum number of parameters. Existing modelling techniques, which have mostly been developed for low current devices, are examined in detail to determine their validity for high current 8JTs. Alter a survey of the literature, the assumptions contained in the lundamental first order theory are investigated, together with the most important second order ellecls. This is followed by a detailed experimental investigation, to establish the dominant mechanisms for both de and dynamic operation. The behaviour 01 large power devices is dominated by conductivity modulation 01 the lightly doped collector region. This means that the Gummel-Poon model, which is based on ellects in the base is not the most appropriate for high current modelling. II also found that the the simple charge control equation can give accurate results for dynamic modelling. The dynamic saturation region 01 operation is described by a simple model, based on the quantity 01 stored charge. This is an improvement on the currently used Gummel-Poon models. The findings are all incorporated into a new model, which is included in a version of the SPICE network simulation program and then tested experimentally. The importance 01 the reverse conduction mode 01 operation is discussed and some techniques for modelling this region are presented, together with some experimental results. II is shown conclusively that the developed device based approach, models the behaviour of the devices adequately for converter design purposes, over a wide range of operating conditions.

Subjects/Keywords: Bipolar transistors; Bipolar integrated circuits; Junction transistors

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APA (6^th Edition):

Prest, R. B. (2014). Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/9511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Prest, Rory Bruce. “Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.” 2014. Thesis, University of Johannesburg. Accessed February 25, 2020. http://hdl.handle.net/10210/9511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Prest, Rory Bruce. “Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.” 2014. Web. 25 Feb 2020.

Vancouver:

Prest RB. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. [Internet] [Thesis]. University of Johannesburg; 2014. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10210/9511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Prest RB. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. [Thesis]. University of Johannesburg; 2014. Available from: http://hdl.handle.net/10210/9511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

20. Fournier, David. Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz.

Degree: Docteur es, Micro-Nanotechnologie, Acoustique et Télécommunication, 2010, Université Lille I – Sciences et Technologies

URL: http://www.theses.fr/2010LIL10045

►

Le marché des amplificateurs de puissance pour les combinés téléphoniques portables est actuellement dominé par les semi-conducteurs III-V, les transistors HBT et PHEMT GaAs étant… (more)

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Le marché des amplificateurs de puissance pour les combinés téléphoniques portables est actuellement dominé par les semi-conducteurs III-V, les transistors HBT et PHEMT GaAs étant utilisés dans les amplificateurs de puissances et les commutateurs d’antennes respectivement. Cette situation est cependant en train d’évoluer puisque des technologies silicium sur isolant (SOI, Silicon-On-Insulator) intégrant à la fois l’amplificateur de puissance (avec des transistors LDMOS) et les commutateurs d’antennes (avec des transistors CMOS ou des MEMS) sont en cours de qualification. Toutefois, les performances de ces transistors à grille polysilicium, intégrés aux technologies CMOS, limitent leur utilisation à des fréquences de travail inférieures à 2 GHz. L’objectif des travaux de thèse présentés dans ce manuscrit est d’étendre le domaine d’applications des transistors LDMOS aux réseaux de communication sans fil fonctionnant dans une gamme de fréquences de 3 à 5 GHz. Dans cette perspective, une première étude sur différents substrats SOI et massifs a permis de conclure que les substrats de type SOI mince pénalisent les performances des composants LDMOS, notamment à cause de l’effet d’auto-échauffement qui est plus important. Une seconde étude axée sur la structure même du composant indique qu’une modification du contact de grille permet d’augmenter de façon significative les performances en petit signal mais l’amélioration des performances grand signal est plus modérée. Enfin, une étude plus amont qui vise à remplacer le polysilicium des grilles par un métal a montré que la co-intégration de transistors CMOS classiques avec des transistors LDMOS à grille métallique est possible.

The power amplifier market for mobile phone handsets is currently dominated by III-V semiconductors, the PHEMT and HBT GaAs transistors being used for the power amplifiers and the antenna switches respectively. However, this situation is evolving with the release of Silicon-On-Insulator (SOI) technologies which allow the integration of both the power amplifier (with LDMOS transistors) and the antennae switches (with CMOS transistors or MEMS). The performances of the polysilicon gate LDMOS transistors, integrated in CMOS technologies, limits however the operatinq frequency of the power amplifiers to below 2 GHz. The aim of the thesis work presented in this manuscript is to extend the applications of LDMOS transistors to the wireless communication networks operating in the 3 to 5 GHz frequency range. In this perspective, an initial study on different SOI and bulk substrates concluded that thin SOI substrates penalize the performances of RF LDMOS transistors mainly because of the increase of the self-heating effect. A second study focused on the transistor layout shows that a change in the gate contact scheme can significantly increase the small signal performances but the improvement of the large signal performances is more moderate. Finally, a more advanced study which aims to replace polysilicon gates by metal exhibited that the co-integration of…

Advisors/Committee Members: Gaquière, Christophe (thesis director), Chevalier, Pascal (thesis director).

Subjects/Keywords: Transistors LDMOS; Transistors à grille métallique

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APA (6^th Edition):

Fournier, D. (2010). Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz. (Doctoral Dissertation). Université Lille I – Sciences et Technologies. Retrieved from http://www.theses.fr/2010LIL10045

Chicago Manual of Style (16^th Edition):

Fournier, David. “Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz.” 2010. Doctoral Dissertation, Université Lille I – Sciences et Technologies. Accessed February 25, 2020. http://www.theses.fr/2010LIL10045.

MLA Handbook (7^th Edition):

Fournier, David. “Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz.” 2010. Web. 25 Feb 2020.

Vancouver:

Fournier D. Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz. [Internet] [Doctoral dissertation]. Université Lille I – Sciences et Technologies; 2010. [cited 2020 Feb 25]. Available from: http://www.theses.fr/2010LIL10045.

Council of Science Editors:

Fournier D. Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz. [Doctoral Dissertation]. Université Lille I – Sciences et Technologies; 2010. Available from: http://www.theses.fr/2010LIL10045

21. Shirinskaya, Anna. Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques.

Degree: Docteur es, Chimie, 2017, Université Paris-Saclay (ComUE)

URL: http://www.theses.fr/2017SACLX055

►

Les Transistors Organiques Electrochimiques (OECT) sont largement utilisés comme les capteurs dans de nombreux appareils bioélectroniques. Bien qu’ils aient été largement étudiés au cours de… (more)

▼

Les Transistors Organiques Electrochimiques (OECT) sont largement utilisés comme les capteurs dans de nombreux appareils bioélectroniques. Bien qu’ils aient été largement étudiés au cours de ces dernières années, il n'y a pas encore de compréhension fondamentale et univoque principe de fonctionnement d'un OECT, notamment en ce qui concerne le mécanisme du dé-dopage.Cette thèse est consacrée à la modélisation des Transistors Organiques Electrochimiques. Tout d'abord, un modèle d'état stationnaire numérique a été établi. Ce modèle utilisant les équations de Poisson-Boltzmann, Nernst-Planck et Nernst, nous permet de décrire finement le processus du dé-dopage dans la couche de PEDOT: PSS ainsi que, la distribution des ions et trous dans le capteur. Il a été prouvé expérimentalement que le modèle numérique dit de « neutralité global » est valable pour expliciter le fonctionnement global du capteur, mais aussi, l'origine et le résultat du processus du dé-dopage. La transition d’un modèle totalement numérique à un modèle analytique a été réalisée en ajustant la fonction analytique logistique paramétrique de Boltzmann au profil de conductivité calculé numériquement.Nous avons pu ainsi extraire, la fonction analytique de la dépendance du courant de drain en Fonction du potentiel local. Cette fonction ajuster sur un profil de courant de drain mesuré expérimentalement en fonction du potentiel appliqué permet d'obtenir la conductivité maximale d'une couche de PEDOT: PSS entièrement dopée. La conductivité maximale était dépendante non seulement du matériau, mais aussi de la taille du canal. Il est possible d'extraire, en utilisant la valeur de conductivité maximale et un modèle de semi-conducteur conventionnel, les autres paramètres pour la description complète d’OECT: densité intrinsèque de charge, densité de trous initiaux, concentration initiale de PSS- et capacité volumétrique de la couche polymère conductrice. Le fait d'avoir un outil permettant d'extraire et de caractériser facilement tous les OECT permet non seulement d'augmenter le niveau de description de compréhension du transistor, mais surtout de mieux maitriser la corrélation entre paramètres internes et externes.Finalement, l’approche que nous avons réalisée, couplant modélisation analytique et numérique, nous a permis de proposer une description complète du fonctionnement physique d’un OECT. En outre nous avons pu valider expérimentalement la pertinence de nos modèles en les comparants avec les caractéristiques obtenues via des mesures réelles.

Organic Electrochemical Transistors are widely used as transducers for sensors in bioelectronics devices. Although these devices have been extensively studied in the last years, there is a lack of fundamental understanding of their working mechanism, especially concerning the de-doping mechanism.This thesis is dedicated to Organic Electrochemical Transistors modelling. First of all, a numerical steady state model was established. This model allows implementing the Poisson-Boltzmann, Nernst-Planck and Nernst equations to…

Advisors/Committee Members: Yassar, Abderrahim (thesis director).

Subjects/Keywords: Physics; Transistors; Organic; Physics; Transistors; Organic

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APA (6^th Edition):

Shirinskaya, A. (2017). Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques. (Doctoral Dissertation). Université Paris-Saclay (ComUE). Retrieved from http://www.theses.fr/2017SACLX055

Chicago Manual of Style (16^th Edition):

Shirinskaya, Anna. “Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques.” 2017. Doctoral Dissertation, Université Paris-Saclay (ComUE). Accessed February 25, 2020. http://www.theses.fr/2017SACLX055.

MLA Handbook (7^th Edition):

Shirinskaya, Anna. “Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques.” 2017. Web. 25 Feb 2020.

Vancouver:

Shirinskaya A. Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques. [Internet] [Doctoral dissertation]. Université Paris-Saclay (ComUE); 2017. [cited 2020 Feb 25]. Available from: http://www.theses.fr/2017SACLX055.

Council of Science Editors:

Shirinskaya A. Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques. [Doctoral Dissertation]. Université Paris-Saclay (ComUE); 2017. Available from: http://www.theses.fr/2017SACLX055

Michigan State University

22. Sun, Chih-Chieh Jack. A noise study of bipolar junction transistor reliability.

Degree: PhD, Department of Electrical Engineering, 1993, Michigan State University

URL: http://etd.lib.msu.edu/islandora/object/etd:22579

Subjects/Keywords: Transistors; Bipolar transistors

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APA (6^th Edition):

Sun, C. J. (1993). A noise study of bipolar junction transistor reliability. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:22579

Chicago Manual of Style (16^th Edition):

Sun, Chih-Chieh Jack. “A noise study of bipolar junction transistor reliability.” 1993. Doctoral Dissertation, Michigan State University. Accessed February 25, 2020. http://etd.lib.msu.edu/islandora/object/etd:22579.

MLA Handbook (7^th Edition):

Sun, Chih-Chieh Jack. “A noise study of bipolar junction transistor reliability.” 1993. Web. 25 Feb 2020.

Vancouver:

Sun CJ. A noise study of bipolar junction transistor reliability. [Internet] [Doctoral dissertation]. Michigan State University; 1993. [cited 2020 Feb 25]. Available from: http://etd.lib.msu.edu/islandora/object/etd:22579.

Council of Science Editors:

Sun CJ. A noise study of bipolar junction transistor reliability. [Doctoral Dissertation]. Michigan State University; 1993. Available from: http://etd.lib.msu.edu/islandora/object/etd:22579

University of Hong Kong

23. 杨真一; Yang, Zhenyi. A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor.

Degree: PhD, 2016, University of Hong Kong

URL: http://hdl.handle.net/10722/239375

► Due to the high demand of magnetic sensors in the market nowadays, CMOS magnetic sensor sectorial SD-MAGFETs become widely used because of their compact size… (more)

▼ Due to the high demand of magnetic sensors in the market nowadays, CMOS magnetic sensor sectorial SD-MAGFETs become widely used because of their compact size and their compatibility with the standard CMOS technology. In order to make better use of sectorial SD-MAGFETs, the lateral interface charge effect, and the scaling effect is applied to it to analyze the magnetic sensitivity change. The other parameters such as the source sector angle α are also varied to show the geometric dependent magnetic sensitivity I especially investigated to address the problem of lateral Si/SiO2 interface traps of the sectorial SD-MAGFETs. Due to its special structure and its exposure to the magnetic field, the interface traps at the lateral sidewall of the channel will affect its performance. Consider complex geometry of the device, both theoretical analysis and simulation validations are provided. The interface traps are studied by different types, trap density, and trap energy level of the interface traps and their impact on the magnetic sensitivity of the sectorial SD-MAGFET. The acceptor- type traps are negatively charged when filled with electrons and magnetic sensitivity is increased by increasing IH and decreasing IDS. On the other hand, the donor-type traps are positively charged when filled with electrons and magnetic sensitivity is decreased by decreasing IH and increasing IDS. Acceptor trap energy level lies near to the valance band and the donor trap energy level lies near to the conduction band will also make the magnetic field increase. The analytical model of Hall current IH is first time proposed and shown that it is exponential decay with the time stressing and the decay rate is proportional to the fill rate of the interface traps. This proves there exists the lateral interface traps in the sectorial SD-MAGFET experimentally. The fill rate of the traps at the channel boundary is also source sector angle α dependent. The most serious deterioration of the magnetic sensitivity is observed with α = 56º. Transient sensing hysteresis and magnetic sensing dynamic range are further investigated by experiments and analytical model with charge trapping effect are proposed. Under the increasing magnetic field, the magnetic sensitivity will be affected by the interface charge trapping effect and magnetic sensitivity is inverse quadratic proportional to the source sector angle α. However, the largest magnetic sensitivity, sensing hysteresis and the largest magnetic dynamic range are achieved with different α. As a result, simulation and experimental results both provide design insights of the sectorial SD-MAGFETs. The performance of sectorial SD-MAGFETs can be improved to shrink the channel length into 0.486 μm, as high as the magnetic sensitivity 8.06 %/T is achieved. Considerable results are included to fulfil a comprehensive study on the scaling down of the sectorial SD-MAGFET. The research conducted in this thesis will provide important information for the engineer to design and process the sectorial SD-MAGFETs in the…

Subjects/Keywords: Field-effect transistors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

杨真一; Yang, Z. (2016). A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor. (Doctoral Dissertation). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/239375

Chicago Manual of Style (16^th Edition):

杨真一; Yang, Zhenyi. “A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor.” 2016. Doctoral Dissertation, University of Hong Kong. Accessed February 25, 2020. http://hdl.handle.net/10722/239375.

MLA Handbook (7^th Edition):

杨真一; Yang, Zhenyi. “A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor.” 2016. Web. 25 Feb 2020.

Vancouver:

杨真一; Yang Z. A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor. [Internet] [Doctoral dissertation]. University of Hong Kong; 2016. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10722/239375.

Council of Science Editors:

杨真一; Yang Z. A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor. [Doctoral Dissertation]. University of Hong Kong; 2016. Available from: http://hdl.handle.net/10722/239375

University of Hong Kong

24. Siu, Sik-lam. Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application.

Degree: M. Phil., 2015, University of Hong Kong

URL: Siu, S. [蕭錫霖]. (2015). Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5689306 ; http://dx.doi.org/10.5353/th_b5689306 ; http://hdl.handle.net/10722/222371

► Magnetic sensors have a wide range of applications in proximity sensing, position sensing, etc. Once a magnetic field is present, or there is a change… (more)

▼ Magnetic sensors have a wide range of applications in proximity sensing, position sensing, etc. Once a magnetic field is present, or there is a change of magnetic field, an electronic signal will be generated from the magnetic sensor. The Hall Effect sensor is a well-known magnetic sensor where the hall voltage varies piecewise with the magnetic field strength. The advanced CMOS technology enables the integration of magnetic sensing core, biasing circuit, amplifier, etc., into one tiny chip. Therefore the power consumption, parasitic element and manufacturing cost of the integrated magnetic sensor can be reduced. It is well-known that silicon is a material which is compatible with the integrated circuit fabrication process. However, silicon may not be a good choice for being an integrated magnetic sensor because of the low mobility property. Low mobility will degrade the performance of the magnetic sensing core, especially the magnetic field sensitivity. Recent research has improved the performance of magnetic sensing core fabricated by silicon such as the development of the metal oxide semiconductor (MOS) Hall Plate and Split-Drain Magnetic Field Effect Transistor (SD-MAGFET). These magnetic sensors are feasible for integrating with a biasing circuit, amplifier and A/D converter. Therefore a silicon magnetic sensor with high magnetic field sensitivity, reduced power consumption and less parasitic elements can be fabricated. These properties make integrated magnetic sensors popular in industrial and motion control systems, especially in mechatronic application. The operation of a mechatronic system usually involves a high operating temperature and high unwanted signal noise. Silicon magnetic sensors are capable of high performance under the above conditions. A high magnetic field changing rate is one of the main factors which degrade the performance of magnetic sensors in mechatronic application. Especially in measuring the angular position of a magnet, a fast changing magnetic field rate will cause the magnetic sensor not to move fast enough respond to the changing magnetic field. Another factor that also strongly influences magnetic field sensitivity is the geometric dimension variation of magnetic sensors. This variation is caused by the imperfect manufacturing process and it is unavoidable. In my research, a Sectorial Split-Drain (SSD) MAGFET is employed for investigation. An experiment is designed for investigating the magnetic field sensing behaviour of alternating magnetic fields. The magnetic field sensing resolution is studied through spectral analysis. The studies show that a MAGFET-based system can achieve better accuracy than traditional Hall Plate when sensing the alternating magnetic field. The underlying physics are also explored which leads to device selection guidelines for high speed, high accuracy angular position measurement. Another experiment is designed to investigate the SSD-MAGFET magnetic field sensitivity variation, whereby the sensitivity variation is induced by manufacturing…

Subjects/Keywords: Field-effect transistors

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APA (6^th Edition):

Siu, S. (2015). Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. (Masters Thesis). University of Hong Kong. Retrieved from Siu, S. [蕭錫霖]. (2015). Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5689306 ; http://dx.doi.org/10.5353/th_b5689306 ; http://hdl.handle.net/10722/222371

Chicago Manual of Style (16^th Edition):

Siu, Sik-lam. “Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application.” 2015. Masters Thesis, University of Hong Kong. Accessed February 25, 2020. Siu, S. [蕭錫霖]. (2015). Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5689306 ; http://dx.doi.org/10.5353/th_b5689306 ; http://hdl.handle.net/10722/222371.

MLA Handbook (7^th Edition):

Siu, Sik-lam. “Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application.” 2015. Web. 25 Feb 2020.

Vancouver:

Siu S. Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. [Internet] [Masters thesis]. University of Hong Kong; 2015. [cited 2020 Feb 25]. Available from: Siu, S. [蕭錫霖]. (2015). Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5689306 ; http://dx.doi.org/10.5353/th_b5689306 ; http://hdl.handle.net/10722/222371.

Council of Science Editors:

Siu S. Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. [Masters Thesis]. University of Hong Kong; 2015. Available from: Siu, S. [蕭錫霖]. (2015). Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5689306 ; http://dx.doi.org/10.5353/th_b5689306 ; http://hdl.handle.net/10722/222371

Rochester Institute of Technology

25. Anderson, Jackson D. Measurement of Ferroelectric Films in MFM and MFIS Structures.

Degree: MS, Microelectronic Engineering, 2017, Rochester Institute of Technology

URL: https://scholarworks.rit.edu/theses/9547

► For many years ferroelectric memory has been used in applications requiring low power, yet mainstream adoption has been stifled due to integration and scaling… (more)

Subjects/Keywords: Capacitors; Ferroelectric; Transistors

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APA (6^th Edition):

Anderson, J. D. (2017). Measurement of Ferroelectric Films in MFM and MFIS Structures. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/9547

Chicago Manual of Style (16^th Edition):

Anderson, Jackson D. “Measurement of Ferroelectric Films in MFM and MFIS Structures.” 2017. Masters Thesis, Rochester Institute of Technology. Accessed February 25, 2020. https://scholarworks.rit.edu/theses/9547.

MLA Handbook (7^th Edition):

Anderson, Jackson D. “Measurement of Ferroelectric Films in MFM and MFIS Structures.” 2017. Web. 25 Feb 2020.

Vancouver:

Anderson JD. Measurement of Ferroelectric Films in MFM and MFIS Structures. [Internet] [Masters thesis]. Rochester Institute of Technology; 2017. [cited 2020 Feb 25]. Available from: https://scholarworks.rit.edu/theses/9547.

Council of Science Editors:

Anderson JD. Measurement of Ferroelectric Films in MFM and MFIS Structures. [Masters Thesis]. Rochester Institute of Technology; 2017. Available from: https://scholarworks.rit.edu/theses/9547

University of Notre Dame

26. Hubert C George. Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>.

Degree: PhD, Electrical Engineering, 2011, University of Notre Dame

URL: https://curate.nd.edu/show/xw42n586g72

► Significant attention has been given to the so-called “blinking dot” phenomenon, which describes the fluorescence intermittency exhibited by a wide variety of nanoscale objects… (more)

Subjects/Keywords: Single Electron Transistors

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APA (6^th Edition):

George, H. C. (2011). Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/xw42n586g72

Chicago Manual of Style (16^th Edition):

George, Hubert C. “Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>.” 2011. Doctoral Dissertation, University of Notre Dame. Accessed February 25, 2020. https://curate.nd.edu/show/xw42n586g72.

MLA Handbook (7^th Edition):

George, Hubert C. “Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>.” 2011. Web. 25 Feb 2020.

Vancouver:

George HC. Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2011. [cited 2020 Feb 25]. Available from: https://curate.nd.edu/show/xw42n586g72.

Council of Science Editors:

George HC. Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>. [Doctoral Dissertation]. University of Notre Dame; 2011. Available from: https://curate.nd.edu/show/xw42n586g72

Université de Grenoble

27. Tachi, Kiichi. Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures.

Degree: Docteur es, Micro et nanoélectronique, 2011, Université de Grenoble

URL: http://www.theses.fr/2011GRENT084

►

Il a été démontré que la structure gate-all-around en nanofils de silicium peut radicalement supprimer les effets de canaux courts. De plus, l'introduction d'espaceurs internes… (more)

Subjects/Keywords: Transistors CMOS; Transistor nanofils; Mobilité; Intégration 3D; CMOS transistors; Nanowire transistors; Mobility; 3D integration; 620

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APA (6^th Edition):

Tachi, K. (2011). Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENT084

Chicago Manual of Style (16^th Edition):

Tachi, Kiichi. “Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed February 25, 2020. http://www.theses.fr/2011GRENT084.

MLA Handbook (7^th Edition):

Tachi, Kiichi. “Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures.” 2011. Web. 25 Feb 2020.

Vancouver:

Tachi K. Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2020 Feb 25]. Available from: http://www.theses.fr/2011GRENT084.

Council of Science Editors:

Tachi K. Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENT084

The Ohio State University

28. Meyer, David D. Two-dimensional numerical analysis of semiconductor devices : application to bipolar transistors.

Degree: PhD, Graduate School, 1972, The Ohio State University

URL: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486739553810642

Subjects/Keywords: Engineering; Transistors

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APA (6^th Edition):

Meyer, D. D. (1972). Two-dimensional numerical analysis of semiconductor devices : application to bipolar transistors. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1486739553810642

Chicago Manual of Style (16^th Edition):

Meyer, David D. “Two-dimensional numerical analysis of semiconductor devices : application to bipolar transistors.” 1972. Doctoral Dissertation, The Ohio State University. Accessed February 25, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1486739553810642.

MLA Handbook (7^th Edition):

Meyer, David D. “Two-dimensional numerical analysis of semiconductor devices : application to bipolar transistors.” 1972. Web. 25 Feb 2020.

Vancouver:

Meyer DD. Two-dimensional numerical analysis of semiconductor devices : application to bipolar transistors. [Internet] [Doctoral dissertation]. The Ohio State University; 1972. [cited 2020 Feb 25]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486739553810642.

Council of Science Editors:

Meyer DD. Two-dimensional numerical analysis of semiconductor devices : application to bipolar transistors. [Doctoral Dissertation]. The Ohio State University; 1972. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486739553810642

The Ohio State University

29. Josenhans, James Gross. A study of magnetic field effects in the base of a silicon N-P-N junction transistor.

Degree: PhD, Graduate School, 1962, The Ohio State University

URL: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486559657281127

Subjects/Keywords: Engineering; Transistors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Josenhans, J. G. (1962). A study of magnetic field effects in the base of a silicon N-P-N junction transistor. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1486559657281127

Chicago Manual of Style (16^th Edition):

Josenhans, James Gross. “A study of magnetic field effects in the base of a silicon N-P-N junction transistor.” 1962. Doctoral Dissertation, The Ohio State University. Accessed February 25, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1486559657281127.

MLA Handbook (7^th Edition):

Josenhans, James Gross. “A study of magnetic field effects in the base of a silicon N-P-N junction transistor.” 1962. Web. 25 Feb 2020.

Vancouver:

Josenhans JG. A study of magnetic field effects in the base of a silicon N-P-N junction transistor. [Internet] [Doctoral dissertation]. The Ohio State University; 1962. [cited 2020 Feb 25]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486559657281127.

Council of Science Editors:

Josenhans JG. A study of magnetic field effects in the base of a silicon N-P-N junction transistor. [Doctoral Dissertation]. The Ohio State University; 1962. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486559657281127

The Ohio State University

30. Knaell, Kenneth Kay. Lateral effects in p-n junctions.

Degree: PhD, Graduate School, 1965, The Ohio State University

URL: http://rave.ohiolink.edu/etdc/view?acc_num=osu148656755945344

Subjects/Keywords: Engineering; Transistors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Knaell, K. K. (1965). Lateral effects in p-n junctions. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu148656755945344

Chicago Manual of Style (16^th Edition):

Knaell, Kenneth Kay. “Lateral effects in p-n junctions.” 1965. Doctoral Dissertation, The Ohio State University. Accessed February 25, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu148656755945344.

MLA Handbook (7^th Edition):

Knaell, Kenneth Kay. “Lateral effects in p-n junctions.” 1965. Web. 25 Feb 2020.

Vancouver:

Knaell KK. Lateral effects in p-n junctions. [Internet] [Doctoral dissertation]. The Ohio State University; 1965. [cited 2020 Feb 25]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu148656755945344.

Council of Science Editors:

Knaell KK. Lateral effects in p-n junctions. [Doctoral Dissertation]. The Ohio State University; 1965. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu148656755945344

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