subject:(Transistors)

Rochester Institute of Technology

1. Mauersberg, Diane. Rapid thermal processing of polysilicon emitter transistors.

Degree: Electrical Engineering, 1994, Rochester Institute of Technology

URL: https://scholarworks.rit.edu/theses/5603

► The recent developments in rapid thermal processing in the past several years have shown it to have much potential in achieving full dopant activation of… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Mauersberg, D. (1994). Rapid thermal processing of polysilicon emitter transistors. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/5603

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Mauersberg, Diane. “Rapid thermal processing of polysilicon emitter transistors.” 1994. Thesis, Rochester Institute of Technology. Accessed March 02, 2021. https://scholarworks.rit.edu/theses/5603.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Mauersberg, Diane. “Rapid thermal processing of polysilicon emitter transistors.” 1994. Web. 02 Mar 2021.

Vancouver:

Mauersberg D. Rapid thermal processing of polysilicon emitter transistors. [Internet] [Thesis]. Rochester Institute of Technology; 1994. [cited 2021 Mar 02]. Available from: https://scholarworks.rit.edu/theses/5603.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mauersberg D. Rapid thermal processing of polysilicon emitter transistors. [Thesis]. Rochester Institute of Technology; 1994. Available from: https://scholarworks.rit.edu/theses/5603

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Oregon State University

2. Cheung, David Kin-Poon. Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors.

Degree: MS, Electrical and Electronics Engineering, 1967, Oregon State University

URL: http://hdl.handle.net/1957/47002

► Four methods for the simultaneous fabrication of field-effect and bipolar transistors have been investigated. The basic process involves obtaining two different junction depths by a… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Cheung, D. K. (1967). Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/47002

Chicago Manual of Style (16^th Edition):

Cheung, David Kin-Poon. “Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors.” 1967. Masters Thesis, Oregon State University. Accessed March 02, 2021. http://hdl.handle.net/1957/47002.

MLA Handbook (7^th Edition):

Cheung, David Kin-Poon. “Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors.” 1967. Web. 02 Mar 2021.

Vancouver:

Cheung DK. Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors. [Internet] [Masters thesis]. Oregon State University; 1967. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1957/47002.

Council of Science Editors:

Cheung DK. Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors. [Masters Thesis]. Oregon State University; 1967. Available from: http://hdl.handle.net/1957/47002

Oregon State University

3. Khanna, Satya Pal. The concentration profile of diffused radio-active antimony in a silicon-dioxide layer.

Degree: MS, Electrical Engineering, 1963, Oregon State University

URL: http://hdl.handle.net/1957/48816

► The selective masking effect of a thermally grown layer of silicon dioxide has been widely utilized as a technique for controlling the geometry and impurity… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Khanna, S. P. (1963). The concentration profile of diffused radio-active antimony in a silicon-dioxide layer. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/48816

Chicago Manual of Style (16^th Edition):

Khanna, Satya Pal. “The concentration profile of diffused radio-active antimony in a silicon-dioxide layer.” 1963. Masters Thesis, Oregon State University. Accessed March 02, 2021. http://hdl.handle.net/1957/48816.

MLA Handbook (7^th Edition):

Khanna, Satya Pal. “The concentration profile of diffused radio-active antimony in a silicon-dioxide layer.” 1963. Web. 02 Mar 2021.

Vancouver:

Khanna SP. The concentration profile of diffused radio-active antimony in a silicon-dioxide layer. [Internet] [Masters thesis]. Oregon State University; 1963. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1957/48816.

Council of Science Editors:

Khanna SP. The concentration profile of diffused radio-active antimony in a silicon-dioxide layer. [Masters Thesis]. Oregon State University; 1963. Available from: http://hdl.handle.net/1957/48816

Oregon State University

4. Richardson, Dennis W. Predicting transistor switching time.

Degree: MS, Electrical Engineering, 1963, Oregon State University

URL: http://hdl.handle.net/1957/48721

► This thesis is a development of two sets of equations predicting the switching times of a saturated transistor. The first set of equations defines the… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Richardson, D. W. (1963). Predicting transistor switching time. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/48721

Chicago Manual of Style (16^th Edition):

Richardson, Dennis W. “Predicting transistor switching time.” 1963. Masters Thesis, Oregon State University. Accessed March 02, 2021. http://hdl.handle.net/1957/48721.

MLA Handbook (7^th Edition):

Richardson, Dennis W. “Predicting transistor switching time.” 1963. Web. 02 Mar 2021.

Vancouver:

Richardson DW. Predicting transistor switching time. [Internet] [Masters thesis]. Oregon State University; 1963. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1957/48721.

Council of Science Editors:

Richardson DW. Predicting transistor switching time. [Masters Thesis]. Oregon State University; 1963. Available from: http://hdl.handle.net/1957/48721

Oregon State University

5. Ballieu, Howard Lee. The binistor as an electronic switching element.

Degree: MS, Electrical Engineering, 1961, Oregon State University

URL: http://hdl.handle.net/1957/49347

Subjects/Keywords: Transistors

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APA (6^th Edition):

Ballieu, H. L. (1961). The binistor as an electronic switching element. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/49347

Chicago Manual of Style (16^th Edition):

Ballieu, Howard Lee. “The binistor as an electronic switching element.” 1961. Masters Thesis, Oregon State University. Accessed March 02, 2021. http://hdl.handle.net/1957/49347.

MLA Handbook (7^th Edition):

Ballieu, Howard Lee. “The binistor as an electronic switching element.” 1961. Web. 02 Mar 2021.

Vancouver:

Ballieu HL. The binistor as an electronic switching element. [Internet] [Masters thesis]. Oregon State University; 1961. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1957/49347.

Council of Science Editors:

Ballieu HL. The binistor as an electronic switching element. [Masters Thesis]. Oregon State University; 1961. Available from: http://hdl.handle.net/1957/49347

Oregon State University

6. Smith, Roy John. The protection of semiconductor devices from electrical transients.

Degree: MS, Electrical Engineering, 1962, Oregon State University

URL: http://hdl.handle.net/1957/49973

Subjects/Keywords: Transistors

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APA (6^th Edition):

Smith, R. J. (1962). The protection of semiconductor devices from electrical transients. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/49973

Chicago Manual of Style (16^th Edition):

Smith, Roy John. “The protection of semiconductor devices from electrical transients.” 1962. Masters Thesis, Oregon State University. Accessed March 02, 2021. http://hdl.handle.net/1957/49973.

MLA Handbook (7^th Edition):

Smith, Roy John. “The protection of semiconductor devices from electrical transients.” 1962. Web. 02 Mar 2021.

Vancouver:

Smith RJ. The protection of semiconductor devices from electrical transients. [Internet] [Masters thesis]. Oregon State University; 1962. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1957/49973.

Council of Science Editors:

Smith RJ. The protection of semiconductor devices from electrical transients. [Masters Thesis]. Oregon State University; 1962. Available from: http://hdl.handle.net/1957/49973

Oregon State University

7. Tao, David Ming-Shih. A complementary MOS random-access-memory cell wth double-diffused MOS transistors.

Degree: PhD, Electrical and Electronics Engineering, 1972, Oregon State University

URL: http://hdl.handle.net/1957/44800

► The use of double-diffused n-type MOS transistor (DN-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of this investigation. DN-MOS transistors… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Tao, D. M. (1972). A complementary MOS random-access-memory cell wth double-diffused MOS transistors. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/44800

Chicago Manual of Style (16^th Edition):

Tao, David Ming-Shih. “A complementary MOS random-access-memory cell wth double-diffused MOS transistors.” 1972. Doctoral Dissertation, Oregon State University. Accessed March 02, 2021. http://hdl.handle.net/1957/44800.

MLA Handbook (7^th Edition):

Tao, David Ming-Shih. “A complementary MOS random-access-memory cell wth double-diffused MOS transistors.” 1972. Web. 02 Mar 2021.

Vancouver:

Tao DM. A complementary MOS random-access-memory cell wth double-diffused MOS transistors. [Internet] [Doctoral dissertation]. Oregon State University; 1972. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1957/44800.

Council of Science Editors:

Tao DM. A complementary MOS random-access-memory cell wth double-diffused MOS transistors. [Doctoral Dissertation]. Oregon State University; 1972. Available from: http://hdl.handle.net/1957/44800

Oregon State University

8. Limvorapun, Thawee. The MOS tetrode transistor.

Degree: MS, Electrical and Electronics Engineering, 1972, Oregon State University

URL: http://hdl.handle.net/1957/45372

► The MOS tetrode transistor is studied in this project. This device is ideally suited for high frequency and switching application. In effect it is the… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Limvorapun, T. (1972). The MOS tetrode transistor. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/45372

Chicago Manual of Style (16^th Edition):

Limvorapun, Thawee. “The MOS tetrode transistor.” 1972. Masters Thesis, Oregon State University. Accessed March 02, 2021. http://hdl.handle.net/1957/45372.

MLA Handbook (7^th Edition):

Limvorapun, Thawee. “The MOS tetrode transistor.” 1972. Web. 02 Mar 2021.

Vancouver:

Limvorapun T. The MOS tetrode transistor. [Internet] [Masters thesis]. Oregon State University; 1972. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1957/45372.

Council of Science Editors:

Limvorapun T. The MOS tetrode transistor. [Masters Thesis]. Oregon State University; 1972. Available from: http://hdl.handle.net/1957/45372

Oregon State University

9. Hwang, Yun-sheng. Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors.

Degree: MS, Electrical and Electronics Engineering, 1970, Oregon State University

URL: http://hdl.handle.net/1957/45752

► The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices made with single-layer aluminum-oxide films and double-layer films which were made by… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Hwang, Y. (1970). Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/45752

Chicago Manual of Style (16^th Edition):

Hwang, Yun-sheng. “Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors.” 1970. Masters Thesis, Oregon State University. Accessed March 02, 2021. http://hdl.handle.net/1957/45752.

MLA Handbook (7^th Edition):

Hwang, Yun-sheng. “Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors.” 1970. Web. 02 Mar 2021.

Vancouver:

Hwang Y. Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors. [Internet] [Masters thesis]. Oregon State University; 1970. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1957/45752.

Council of Science Editors:

Hwang Y. Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors. [Masters Thesis]. Oregon State University; 1970. Available from: http://hdl.handle.net/1957/45752

Oregon State University

10. Chou, Pen Chao. A MOS-transistor with submicron, and graded channel.

Degree: PhD, Electrical and Electronics Engineering, 1971, Oregon State University

URL: http://hdl.handle.net/1957/46003

► The theoretical aspects and fabrication techniques of a new surface field-effect transistor were investigated. The new MOS-transistor uses a three-layer structure similar to those found… (more)

Subjects/Keywords: Transistors

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APA (6^th Edition):

Chou, P. C. (1971). A MOS-transistor with submicron, and graded channel. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/46003

Chicago Manual of Style (16^th Edition):

Chou, Pen Chao. “A MOS-transistor with submicron, and graded channel.” 1971. Doctoral Dissertation, Oregon State University. Accessed March 02, 2021. http://hdl.handle.net/1957/46003.

MLA Handbook (7^th Edition):

Chou, Pen Chao. “A MOS-transistor with submicron, and graded channel.” 1971. Web. 02 Mar 2021.

Vancouver:

Chou PC. A MOS-transistor with submicron, and graded channel. [Internet] [Doctoral dissertation]. Oregon State University; 1971. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1957/46003.

Council of Science Editors:

Chou PC. A MOS-transistor with submicron, and graded channel. [Doctoral Dissertation]. Oregon State University; 1971. Available from: http://hdl.handle.net/1957/46003

Oregon State University

11. Delzer, Dennis Richard. Vacuum evaporated dielectrics in MOS structures.

Degree: PhD, Electrical and Electronics Engineering, 1968, Oregon State University

URL: http://hdl.handle.net/1957/46875

► Vacuum evaporated dielectrics for use in MOS structures were studied in this research project. Dielectric films were deposited on substrates by electron bombardment evaporation of… (more)

▼ Vacuum evaporated dielectrics for use in MOS structures were studied in this research project. Dielectric films were deposited on substrates by electron bombardment evaporation of sapphire and quartz source materials. These deposited films were studied using infrared spectroscopy, index of refraction, density, and dielectric constant measurements. Etching tests were also conducted on the dielectric films. Annealing these films was also tried. From the results of these tests, it was concluded that suitable aluminum oxide and silicon dioxide films can be obtained by e-Gun evaporation. The best results were obtained for slowly evaporated films on substrates heated above 200° C. Better films were obtained after annealing for ten minutes at 1100°C in dry nitrogen. The diffusion masking properties of the e-Gun evaporated silicon dioxide and aluminum oxide films were studied. The evaporated films were tested for the masking of phosphorus and boron diffusion into silicon, of gallium and indium diffusion into germanium, and of zinc diffusion into gallium arsenide. From the results of these tests, it was concluded that both of these e-Gun evaporated films will effectively mask the diffusion of all the above mentioned impurities. The aluminum oxide films were better diffusion masks because they were more impervious to the diffusion of impurities. It required significantly thinner films of aluminum oxide to effectively mask the diffusion of all the impurities studied. The e-Gun evaporated films were used to fabricate MOS capacitors. Both aluminum oxide and silicon dioxide films produced good capacitors. The threshold voltages and surface-state densities of the capacitors were studied. Aluminum oxide films produced MOS capacitors which were relatively stable under bias-temperature tests. The e-Gun evaporated films were used in the fabrication of MOS transistors. The electrical properties of these transistors were studied using I-V characteristics. Both dielectrics produced good MOS transistors. Aluminum oxide films produced transistors with transconductances which were twice as large as the transconductances of the transistors with silicon dioxide films of the same thickness. The aluminum oxide films produced transistors which were relatively stable under bias-temperature tests, a possible reason for this being that impurity ions are less mobile in it than in silicon dioxide. Advisors/Committee Members: Looney, James C. (advisor).

Subjects/Keywords: Transistors

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APA (6^th Edition):

Delzer, D. R. (1968). Vacuum evaporated dielectrics in MOS structures. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/46875

Chicago Manual of Style (16^th Edition):

Delzer, Dennis Richard. “Vacuum evaporated dielectrics in MOS structures.” 1968. Doctoral Dissertation, Oregon State University. Accessed March 02, 2021. http://hdl.handle.net/1957/46875.

MLA Handbook (7^th Edition):

Delzer, Dennis Richard. “Vacuum evaporated dielectrics in MOS structures.” 1968. Web. 02 Mar 2021.

Vancouver:

Delzer DR. Vacuum evaporated dielectrics in MOS structures. [Internet] [Doctoral dissertation]. Oregon State University; 1968. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1957/46875.

Council of Science Editors:

Delzer DR. Vacuum evaporated dielectrics in MOS structures. [Doctoral Dissertation]. Oregon State University; 1968. Available from: http://hdl.handle.net/1957/46875

Michigan State University

12. ElSherif, Helmy Hassan. Transistor large signal analysis.

Degree: PhD, Department of Electrical Engineering, 1964, Michigan State University

URL: http://etd.lib.msu.edu/islandora/object/etd:39847

Subjects/Keywords: Transistors

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APA (6^th Edition):

ElSherif, H. H. (1964). Transistor large signal analysis. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:39847

Chicago Manual of Style (16^th Edition):

ElSherif, Helmy Hassan. “Transistor large signal analysis.” 1964. Doctoral Dissertation, Michigan State University. Accessed March 02, 2021. http://etd.lib.msu.edu/islandora/object/etd:39847.

MLA Handbook (7^th Edition):

ElSherif, Helmy Hassan. “Transistor large signal analysis.” 1964. Web. 02 Mar 2021.

Vancouver:

ElSherif HH. Transistor large signal analysis. [Internet] [Doctoral dissertation]. Michigan State University; 1964. [cited 2021 Mar 02]. Available from: http://etd.lib.msu.edu/islandora/object/etd:39847.

Council of Science Editors:

ElSherif HH. Transistor large signal analysis. [Doctoral Dissertation]. Michigan State University; 1964. Available from: http://etd.lib.msu.edu/islandora/object/etd:39847

University of Arizona

13. Nygaard, Paul Andrew, 1940-. Models of the drift transistor .

Degree: 1964, University of Arizona

URL: http://hdl.handle.net/10150/319533

Subjects/Keywords: Transistors.

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APA (6^th Edition):

Nygaard, Paul Andrew, 1. (1964). Models of the drift transistor . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/319533

Chicago Manual of Style (16^th Edition):

Nygaard, Paul Andrew, 1940-. “Models of the drift transistor .” 1964. Masters Thesis, University of Arizona. Accessed March 02, 2021. http://hdl.handle.net/10150/319533.

MLA Handbook (7^th Edition):

Nygaard, Paul Andrew, 1940-. “Models of the drift transistor .” 1964. Web. 02 Mar 2021.

Vancouver:

Nygaard, Paul Andrew 1. Models of the drift transistor . [Internet] [Masters thesis]. University of Arizona; 1964. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/10150/319533.

Council of Science Editors:

Nygaard, Paul Andrew 1. Models of the drift transistor . [Masters Thesis]. University of Arizona; 1964. Available from: http://hdl.handle.net/10150/319533

University of Arizona

14. Latorre, Victor Robert, 1931-. Frequency variations of transistor parameters .

Degree: 1956, University of Arizona

URL: http://hdl.handle.net/10150/319587

Subjects/Keywords: Transistors.

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APA (6^th Edition):

Latorre, Victor Robert, 1. (1956). Frequency variations of transistor parameters . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/319587

Chicago Manual of Style (16^th Edition):

Latorre, Victor Robert, 1931-. “Frequency variations of transistor parameters .” 1956. Masters Thesis, University of Arizona. Accessed March 02, 2021. http://hdl.handle.net/10150/319587.

MLA Handbook (7^th Edition):

Latorre, Victor Robert, 1931-. “Frequency variations of transistor parameters .” 1956. Web. 02 Mar 2021.

Vancouver:

Latorre, Victor Robert 1. Frequency variations of transistor parameters . [Internet] [Masters thesis]. University of Arizona; 1956. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/10150/319587.

Council of Science Editors:

Latorre, Victor Robert 1. Frequency variations of transistor parameters . [Masters Thesis]. University of Arizona; 1956. Available from: http://hdl.handle.net/10150/319587

Georgia Tech

15. Rice, Lincoln Phelps. A transistorized regulated power supply.

Degree: MS, Electric Engineering, 1954, Georgia Tech

URL: http://hdl.handle.net/1853/13868

Subjects/Keywords: Transistors

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APA (6^th Edition):

Rice, L. P. (1954). A transistorized regulated power supply. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/13868

Chicago Manual of Style (16^th Edition):

Rice, Lincoln Phelps. “A transistorized regulated power supply.” 1954. Masters Thesis, Georgia Tech. Accessed March 02, 2021. http://hdl.handle.net/1853/13868.

MLA Handbook (7^th Edition):

Rice, Lincoln Phelps. “A transistorized regulated power supply.” 1954. Web. 02 Mar 2021.

Vancouver:

Rice LP. A transistorized regulated power supply. [Internet] [Masters thesis]. Georgia Tech; 1954. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1853/13868.

Council of Science Editors:

Rice LP. A transistorized regulated power supply. [Masters Thesis]. Georgia Tech; 1954. Available from: http://hdl.handle.net/1853/13868

University of British Columbia

16. Cameron, Frank Charles. Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier.

Degree: Master of Applied Science - MASc, Electrical and Computer Engineering, 1962, University of British Columbia

URL: http://hdl.handle.net/2429/39615

► Bruun and Grinich have previously described video amplifier designs using resistance-capacitance feedback in the emitter lead for stages in the common-emitter configuration. Diffusion-type alloy-junction transistors… (more)

▼ Bruun and Grinich have previously described video amplifier designs using resistance-capacitance feedback in the emitter lead for stages in the common-emitter configuration. Diffusion-type alloy-junction transistors which are well described by the Johnson-Giacoletto hybrid-π equivalent circuit, were used in both cases. The amplifier cascades described by Grinich produced Butterworth-type responses through use of pole-zero cancellation. The research reported here is concerned with an alternative design method using an iterative numerical procedure to obtain broadband amplifier cascades without the use of pole-zero cancellation. In addition, the method is sufficiently general to include both drift- and diffusion-type alloy-junction transistors. Equivalent circuits of the Johnson-Giacoletto hybrid-π type are reviewed and modifications necessary to treat emitter feedback amplifiers using the newer types of high-frequency transistors are developed. Transfer functions for stages and cascades of stages using either drift- or diffusion-types of transistors in the common-emitter configuration with emitter feedback are given. Special attention is given to the property of this type of amplifier that the zeros and poles of the transfer function are interdependent. Suitable parameters for defining this dependence are developed, and the problem of synthesizing for flat amplitude response, in spite of this dependence, is described. A numerical iterative method of solution is proposed. A numerical example of a three-stage amplifier design using a 2N384 p-n-p drift transistor for maximally-flat amplitude response with a passband from 40 cps to 6.5 Mc is given. The design is compared with an equivalent amplifier of the Butter-worth type obtained by the Grinich method. It is shown that an optimum interstage resistance giving maximum dc amplification exists when using this iterative method, but that there is no true optimum for Grinich designs. The theoretical designs obtained by the iterative method give an amplification of 49.6 db, 7.6 db greater than by the Grinich method for the particular value of interstage resistance used (300Ω). Phase linearity, delay, and step-response overshoot are comparable for the two designs. The numerical method shows good convergence properties, except when designing for very small or very large bandwidths, or for very small dc emitter currents or interstage resistances. An amplifier built according to the theoretical design, but fitted with an input impedance-matching pad and an output emitter-follower pair for connection to a 50-Ω line, is described. Test results indicate that the design values obtained using the modified Johnson-Giacoletto hybrid-π equivalent circuit and the iterative method are sufficiently accurate for construction purposes and that very little adjustment is necessary. Suggestions for further development of the method are given.

Subjects/Keywords: Transistors

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APA (6^th Edition):

Cameron, F. C. (1962). Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier. (Masters Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/39615

Chicago Manual of Style (16^th Edition):

Cameron, Frank Charles. “Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier.” 1962. Masters Thesis, University of British Columbia. Accessed March 02, 2021. http://hdl.handle.net/2429/39615.

MLA Handbook (7^th Edition):

Cameron, Frank Charles. “Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier.” 1962. Web. 02 Mar 2021.

Vancouver:

Cameron FC. Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier. [Internet] [Masters thesis]. University of British Columbia; 1962. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/2429/39615.

Council of Science Editors:

Cameron FC. Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier. [Masters Thesis]. University of British Columbia; 1962. Available from: http://hdl.handle.net/2429/39615

University of British Columbia

17. Hatton, Walter Lewis. Noise figure of the transistor amplifier.

Degree: Master of Applied Science - MASc, Electrical and Computer Engineering, 1951, University of British Columbia

URL: http://hdl.handle.net/2429/40899

► The noise figure of the transistor amplifier is of special interest since the large quantity of excess noise present limits the usefulness of the transistor… (more)

▼ The noise figure of the transistor amplifier is of special interest since the large quantity of excess noise present limits the usefulness of the transistor as a low-noise amplifier. While the equivalent noise voltages generated in the emitter and collector leads vary inversely with frequency, the noise figure does not. This variation from the inverse frequency characteristic is produced by the decrease of the effective gain at higher frequencies. The subject of this thesis is the investigation of this variation. The variation of the noise figure with frequency has been measured for several different transistors, with varying emitter and collector currents. Equivalent diagrams have been suggested which explain the variation of the noise figure with frequency if transit time dispersion is negligible. For low frequencies, the noise figure is given by, (Formula omitted) Variation of the noise figure due to the stray capacities is given approximately by (Formula omitted) The variation, due to transit time effects , ignoring transit time dispersion , i s (Formula omitted) The operating conditions for minimum noise figure of the transistor amplifier are dependent on the frequency. At low frequencies, a low value of emitter current should be used, and the lowest possible value of collector voltage which is compatible with the desired gain. At higher frequencies a low value of emitter current should also be used but the value of the collector voltage is determined by the frequency. The higher the frequency, the higher will be the required collector voltage. The best noise figures at higher frequencies will be obtained with transistors with the following characteristics: (i) ʳm large (ii) close spacing of point contacts (iii) high value of resistivity (iv) small transit time dispersion. Equivalent diagrams have been suggested which parially account for the variation of the noise figure with frequency. It has been suggested that transit time dispersion would explain the remaining deviation of the noise figure from the inverse frequency characteristic.

Subjects/Keywords: Transistors

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APA (6^th Edition):

Hatton, W. L. (1951). Noise figure of the transistor amplifier. (Masters Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/40899

Chicago Manual of Style (16^th Edition):

Hatton, Walter Lewis. “Noise figure of the transistor amplifier.” 1951. Masters Thesis, University of British Columbia. Accessed March 02, 2021. http://hdl.handle.net/2429/40899.

MLA Handbook (7^th Edition):

Hatton, Walter Lewis. “Noise figure of the transistor amplifier.” 1951. Web. 02 Mar 2021.

Vancouver:

Hatton WL. Noise figure of the transistor amplifier. [Internet] [Masters thesis]. University of British Columbia; 1951. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/2429/40899.

Council of Science Editors:

Hatton WL. Noise figure of the transistor amplifier. [Masters Thesis]. University of British Columbia; 1951. Available from: http://hdl.handle.net/2429/40899

Michigan State University

18. Singh, Skuhbir, 1936-. Current saturation mechanism in field-effect transistors.

Degree: PhD, Department of Electrical Engineering and Systems Science, 1970, Michigan State University

URL: http://etd.lib.msu.edu/islandora/object/etd:36927

Subjects/Keywords: Transistors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Singh, Skuhbir, 1. (1970). Current saturation mechanism in field-effect transistors. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:36927

Chicago Manual of Style (16^th Edition):

Singh, Skuhbir, 1936-. “Current saturation mechanism in field-effect transistors.” 1970. Doctoral Dissertation, Michigan State University. Accessed March 02, 2021. http://etd.lib.msu.edu/islandora/object/etd:36927.

MLA Handbook (7^th Edition):

Singh, Skuhbir, 1936-. “Current saturation mechanism in field-effect transistors.” 1970. Web. 02 Mar 2021.

Vancouver:

Singh, Skuhbir 1. Current saturation mechanism in field-effect transistors. [Internet] [Doctoral dissertation]. Michigan State University; 1970. [cited 2021 Mar 02]. Available from: http://etd.lib.msu.edu/islandora/object/etd:36927.

Council of Science Editors:

Singh, Skuhbir 1. Current saturation mechanism in field-effect transistors. [Doctoral Dissertation]. Michigan State University; 1970. Available from: http://etd.lib.msu.edu/islandora/object/etd:36927

Oregon State University

19. Gorecki, Jenna Y. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.

Degree: MS, Chemical Engineering, 2016, Oregon State University

URL: http://hdl.handle.net/1957/59314

► Inkjet-printed p-type copper(I) iodide-based TFTs were successfully fabricated. As-printed copper(I) halide semiconductor films, such as CuI, CuBrI, and CuClI, were used as p-type active channel… (more)

Subjects/Keywords: Thin-Film Transistors; Thin film transistors

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APA (6^th Edition):

Gorecki, J. Y. (2016). Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/59314

Chicago Manual of Style (16^th Edition):

Gorecki, Jenna Y. “Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.” 2016. Masters Thesis, Oregon State University. Accessed March 02, 2021. http://hdl.handle.net/1957/59314.

MLA Handbook (7^th Edition):

Gorecki, Jenna Y. “Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.” 2016. Web. 02 Mar 2021.

Vancouver:

Gorecki JY. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. [Internet] [Masters thesis]. Oregon State University; 2016. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1957/59314.

Council of Science Editors:

Gorecki JY. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. [Masters Thesis]. Oregon State University; 2016. Available from: http://hdl.handle.net/1957/59314

University of Johannesburg

20. Prest, Rory Bruce. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.

Degree: 2014, University of Johannesburg

URL: http://hdl.handle.net/10210/9511

►

D.Ing. (Electrical & Electronic Engineering )

In recent years, bipolar transistors have become available with large current ratings (300A-1DODA). The purpose 01 this study is… (more)

▼

D.Ing. (Electrical & Electronic Engineering )

In recent years, bipolar transistors have become available with large current ratings (300A-1DODA). The purpose 01 this study is to analyse the modelling 01 these devices, with a view to applying the results to detailed power electronic circuit design (for example base drive and snubber circuits). In contrast to the many curve-filling approaches existing in this field, a model which correctly represents the physical mechanisms is desirable, in order to characterise the device behaviour with a minimum number of parameters. Existing modelling techniques, which have mostly been developed for low current devices, are examined in detail to determine their validity for high current 8JTs. Alter a survey of the literature, the assumptions contained in the lundamental first order theory are investigated, together with the most important second order ellecls. This is followed by a detailed experimental investigation, to establish the dominant mechanisms for both de and dynamic operation. The behaviour 01 large power devices is dominated by conductivity modulation 01 the lightly doped collector region. This means that the Gummel-Poon model, which is based on ellects in the base is not the most appropriate for high current modelling. II also found that the the simple charge control equation can give accurate results for dynamic modelling. The dynamic saturation region 01 operation is described by a simple model, based on the quantity 01 stored charge. This is an improvement on the currently used Gummel-Poon models. The findings are all incorporated into a new model, which is included in a version of the SPICE network simulation program and then tested experimentally. The importance 01 the reverse conduction mode 01 operation is discussed and some techniques for modelling this region are presented, together with some experimental results. II is shown conclusively that the developed device based approach, models the behaviour of the devices adequately for converter design purposes, over a wide range of operating conditions.

Subjects/Keywords: Bipolar transistors; Bipolar integrated circuits; Junction transistors

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APA (6^th Edition):

Prest, R. B. (2014). Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/9511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Prest, Rory Bruce. “Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.” 2014. Thesis, University of Johannesburg. Accessed March 02, 2021. http://hdl.handle.net/10210/9511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Prest, Rory Bruce. “Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.” 2014. Web. 02 Mar 2021.

Vancouver:

Prest RB. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. [Internet] [Thesis]. University of Johannesburg; 2014. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/10210/9511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Prest RB. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. [Thesis]. University of Johannesburg; 2014. Available from: http://hdl.handle.net/10210/9511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Fournier, David. Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz.

Degree: Docteur es, Micro-Nanotechnologie, Acoustique et Télécommunication, 2010, Université Lille I – Sciences et Technologies

URL: http://www.theses.fr/2010LIL10045

►

Le marché des amplificateurs de puissance pour les combinés téléphoniques portables est actuellement dominé par les semi-conducteurs III-V, les transistors HBT et PHEMT GaAs étant… (more)

▼

Le marché des amplificateurs de puissance pour les combinés téléphoniques portables est actuellement dominé par les semi-conducteurs III-V, les transistors HBT et PHEMT GaAs étant utilisés dans les amplificateurs de puissances et les commutateurs d’antennes respectivement. Cette situation est cependant en train d’évoluer puisque des technologies silicium sur isolant (SOI, Silicon-On-Insulator) intégrant à la fois l’amplificateur de puissance (avec des transistors LDMOS) et les commutateurs d’antennes (avec des transistors CMOS ou des MEMS) sont en cours de qualification. Toutefois, les performances de ces transistors à grille polysilicium, intégrés aux technologies CMOS, limitent leur utilisation à des fréquences de travail inférieures à 2 GHz. L’objectif des travaux de thèse présentés dans ce manuscrit est d’étendre le domaine d’applications des transistors LDMOS aux réseaux de communication sans fil fonctionnant dans une gamme de fréquences de 3 à 5 GHz. Dans cette perspective, une première étude sur différents substrats SOI et massifs a permis de conclure que les substrats de type SOI mince pénalisent les performances des composants LDMOS, notamment à cause de l’effet d’auto-échauffement qui est plus important. Une seconde étude axée sur la structure même du composant indique qu’une modification du contact de grille permet d’augmenter de façon significative les performances en petit signal mais l’amélioration des performances grand signal est plus modérée. Enfin, une étude plus amont qui vise à remplacer le polysilicium des grilles par un métal a montré que la co-intégration de transistors CMOS classiques avec des transistors LDMOS à grille métallique est possible.

The power amplifier market for mobile phone handsets is currently dominated by III-V semiconductors, the PHEMT and HBT GaAs transistors being used for the power amplifiers and the antenna switches respectively. However, this situation is evolving with the release of Silicon-On-Insulator (SOI) technologies which allow the integration of both the power amplifier (with LDMOS transistors) and the antennae switches (with CMOS transistors or MEMS). The performances of the polysilicon gate LDMOS transistors, integrated in CMOS technologies, limits however the operatinq frequency of the power amplifiers to below 2 GHz. The aim of the thesis work presented in this manuscript is to extend the applications of LDMOS transistors to the wireless communication networks operating in the 3 to 5 GHz frequency range. In this perspective, an initial study on different SOI and bulk substrates concluded that thin SOI substrates penalize the performances of RF LDMOS transistors mainly because of the increase of the self-heating effect. A second study focused on the transistor layout shows that a change in the gate contact scheme can significantly increase the small signal performances but the improvement of the large signal performances is more moderate. Finally, a more advanced study which aims to replace polysilicon gates by metal exhibited that the co-integration of…

Advisors/Committee Members: Gaquière, Christophe (thesis director), Chevalier, Pascal (thesis director).

Subjects/Keywords: Transistors LDMOS; Transistors à grille métallique

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APA (6^th Edition):

Fournier, D. (2010). Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz. (Doctoral Dissertation). Université Lille I – Sciences et Technologies. Retrieved from http://www.theses.fr/2010LIL10045

Chicago Manual of Style (16^th Edition):

Fournier, David. “Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz.” 2010. Doctoral Dissertation, Université Lille I – Sciences et Technologies. Accessed March 02, 2021. http://www.theses.fr/2010LIL10045.

MLA Handbook (7^th Edition):

Fournier, David. “Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz.” 2010. Web. 02 Mar 2021.

Vancouver:

Fournier D. Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz. [Internet] [Doctoral dissertation]. Université Lille I – Sciences et Technologies; 2010. [cited 2021 Mar 02]. Available from: http://www.theses.fr/2010LIL10045.

Council of Science Editors:

Fournier D. Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz. [Doctoral Dissertation]. Université Lille I – Sciences et Technologies; 2010. Available from: http://www.theses.fr/2010LIL10045

22. Shirinskaya, Anna. Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques.

Degree: Docteur es, Chimie, 2017, Université Paris-Saclay (ComUE)

URL: http://www.theses.fr/2017SACLX055

►

Les Transistors Organiques Electrochimiques (OECT) sont largement utilisés comme les capteurs dans de nombreux appareils bioélectroniques. Bien qu’ils aient été largement étudiés au cours de… (more)

▼

Les Transistors Organiques Electrochimiques (OECT) sont largement utilisés comme les capteurs dans de nombreux appareils bioélectroniques. Bien qu’ils aient été largement étudiés au cours de ces dernières années, il n'y a pas encore de compréhension fondamentale et univoque principe de fonctionnement d'un OECT, notamment en ce qui concerne le mécanisme du dé-dopage.Cette thèse est consacrée à la modélisation des Transistors Organiques Electrochimiques. Tout d'abord, un modèle d'état stationnaire numérique a été établi. Ce modèle utilisant les équations de Poisson-Boltzmann, Nernst-Planck et Nernst, nous permet de décrire finement le processus du dé-dopage dans la couche de PEDOT: PSS ainsi que, la distribution des ions et trous dans le capteur. Il a été prouvé expérimentalement que le modèle numérique dit de « neutralité global » est valable pour expliciter le fonctionnement global du capteur, mais aussi, l'origine et le résultat du processus du dé-dopage. La transition d’un modèle totalement numérique à un modèle analytique a été réalisée en ajustant la fonction analytique logistique paramétrique de Boltzmann au profil de conductivité calculé numériquement.Nous avons pu ainsi extraire, la fonction analytique de la dépendance du courant de drain en Fonction du potentiel local. Cette fonction ajuster sur un profil de courant de drain mesuré expérimentalement en fonction du potentiel appliqué permet d'obtenir la conductivité maximale d'une couche de PEDOT: PSS entièrement dopée. La conductivité maximale était dépendante non seulement du matériau, mais aussi de la taille du canal. Il est possible d'extraire, en utilisant la valeur de conductivité maximale et un modèle de semi-conducteur conventionnel, les autres paramètres pour la description complète d’OECT: densité intrinsèque de charge, densité de trous initiaux, concentration initiale de PSS- et capacité volumétrique de la couche polymère conductrice. Le fait d'avoir un outil permettant d'extraire et de caractériser facilement tous les OECT permet non seulement d'augmenter le niveau de description de compréhension du transistor, mais surtout de mieux maitriser la corrélation entre paramètres internes et externes.Finalement, l’approche que nous avons réalisée, couplant modélisation analytique et numérique, nous a permis de proposer une description complète du fonctionnement physique d’un OECT. En outre nous avons pu valider expérimentalement la pertinence de nos modèles en les comparants avec les caractéristiques obtenues via des mesures réelles.

Organic Electrochemical Transistors are widely used as transducers for sensors in bioelectronics devices. Although these devices have been extensively studied in the last years, there is a lack of fundamental understanding of their working mechanism, especially concerning the de-doping mechanism.This thesis is dedicated to Organic Electrochemical Transistors modelling. First of all, a numerical steady state model was established. This model allows implementing the Poisson-Boltzmann, Nernst-Planck and Nernst equations to…

Advisors/Committee Members: Yassar, Abderrahim (thesis director).

Subjects/Keywords: Physics; Transistors; Organic; Physics; Transistors; Organic

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Shirinskaya, A. (2017). Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques. (Doctoral Dissertation). Université Paris-Saclay (ComUE). Retrieved from http://www.theses.fr/2017SACLX055

Chicago Manual of Style (16^th Edition):

Shirinskaya, Anna. “Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques.” 2017. Doctoral Dissertation, Université Paris-Saclay (ComUE). Accessed March 02, 2021. http://www.theses.fr/2017SACLX055.

MLA Handbook (7^th Edition):

Shirinskaya, Anna. “Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques.” 2017. Web. 02 Mar 2021.

Vancouver:

Shirinskaya A. Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques. [Internet] [Doctoral dissertation]. Université Paris-Saclay (ComUE); 2017. [cited 2021 Mar 02]. Available from: http://www.theses.fr/2017SACLX055.

Council of Science Editors:

Shirinskaya A. Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques. [Doctoral Dissertation]. Université Paris-Saclay (ComUE); 2017. Available from: http://www.theses.fr/2017SACLX055

Michigan State University

23. Sun, Chih-Chieh Jack. A noise study of bipolar junction transistor reliability.

Degree: PhD, Department of Electrical Engineering, 1993, Michigan State University

URL: http://etd.lib.msu.edu/islandora/object/etd:22579

Subjects/Keywords: Transistors; Bipolar transistors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Sun, C. J. (1993). A noise study of bipolar junction transistor reliability. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:22579

Chicago Manual of Style (16^th Edition):

Sun, Chih-Chieh Jack. “A noise study of bipolar junction transistor reliability.” 1993. Doctoral Dissertation, Michigan State University. Accessed March 02, 2021. http://etd.lib.msu.edu/islandora/object/etd:22579.

MLA Handbook (7^th Edition):

Sun, Chih-Chieh Jack. “A noise study of bipolar junction transistor reliability.” 1993. Web. 02 Mar 2021.

Vancouver:

Sun CJ. A noise study of bipolar junction transistor reliability. [Internet] [Doctoral dissertation]. Michigan State University; 1993. [cited 2021 Mar 02]. Available from: http://etd.lib.msu.edu/islandora/object/etd:22579.

Council of Science Editors:

Sun CJ. A noise study of bipolar junction transistor reliability. [Doctoral Dissertation]. Michigan State University; 1993. Available from: http://etd.lib.msu.edu/islandora/object/etd:22579

Rochester Institute of Technology

24. Anderson, Jackson D. Measurement of Ferroelectric Films in MFM and MFIS Structures.

Degree: MS, Microelectronic Engineering, 2017, Rochester Institute of Technology

URL: https://scholarworks.rit.edu/theses/9547

► For many years ferroelectric memory has been used in applications requiring low power, yet mainstream adoption has been stifled due to integration and scaling… (more)

Subjects/Keywords: Capacitors; Ferroelectric; Transistors

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APA (6^th Edition):

Anderson, J. D. (2017). Measurement of Ferroelectric Films in MFM and MFIS Structures. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/9547

Chicago Manual of Style (16^th Edition):

Anderson, Jackson D. “Measurement of Ferroelectric Films in MFM and MFIS Structures.” 2017. Masters Thesis, Rochester Institute of Technology. Accessed March 02, 2021. https://scholarworks.rit.edu/theses/9547.

MLA Handbook (7^th Edition):

Anderson, Jackson D. “Measurement of Ferroelectric Films in MFM and MFIS Structures.” 2017. Web. 02 Mar 2021.

Vancouver:

Anderson JD. Measurement of Ferroelectric Films in MFM and MFIS Structures. [Internet] [Masters thesis]. Rochester Institute of Technology; 2017. [cited 2021 Mar 02]. Available from: https://scholarworks.rit.edu/theses/9547.

Council of Science Editors:

Anderson JD. Measurement of Ferroelectric Films in MFM and MFIS Structures. [Masters Thesis]. Rochester Institute of Technology; 2017. Available from: https://scholarworks.rit.edu/theses/9547

Penn State University

25. Hollander, Matthew Johnston. Investigation of Dielectric Overlayers and Device Processing on Transport and Performance of Epitaxial Graphene Field Effect Transistors.

Degree: 2011, Penn State University

URL: https://submit-etda.libraries.psu.edu/catalog/12366

► Graphene is a two-dimensional, one-atom thick layer of carbon atoms arranged in a honeycomb lattice. Exhibiting exceptional physical and electronic properties, graphene has attracted much… (more)

▼ Graphene is a two-dimensional, one-atom thick layer of carbon atoms arranged in a honeycomb lattice. Exhibiting exceptional physical and electronic properties, graphene has attracted much recent attention as a novel material with potential applications in electronics and photonics. Although technical and scientific progress in the field of graphene has been rapid, many important issues remain as barriers to practical technological implementations of the material for electronic applications. Among these, device processing and materials integration without degradation or disruption of the excellent intrinsic properties of graphene are paramount. In this thesis, materials integration of metals and dielectrics with epitaxial graphene is investigated. Various contact metals, pre-treatments, and post-treatments are compared and a reproducible, robust process for producing low specific contact resistivity metal contacts to epitaxial graphene is developed. Similarly, various gate dielectrics and methods of deposition are investigated and a reproducible, robust technique for the deposition of thin, high-k gate dielectrics on epitaxial graphene is developed. This technique utilizes high-k oxide seeds evaporated directly from a high-purity oxide source using electron beam physical vapor deposition as a seed layer for subsequent growth by atomic layer deposition. Importantly, this method not only produces uniform, conformal, and robust gate dielectrics, but also leads to an improvement in the transport properties of the underlying graphene, which has been attributed to dielectric screening and a reduction of remote charged impurity scattering. Finally, the combination of optimized contacts and high-k gate dielectrics on epitaxial graphene has allowed for the demonstration of high extrinsic current gain cutoff frequencies for graphene radio-frequency transistors. Advisors/Committee Members: Joshua Alexander Robinson, Thesis Advisor/Co-Advisor, Joshua Alexander Robinson, Thesis Advisor/Co-Advisor.

Subjects/Keywords: graphene; transistors; FET

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Hollander, M. J. (2011). Investigation of Dielectric Overlayers and Device Processing on Transport and Performance of Epitaxial Graphene Field Effect Transistors. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/12366

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Hollander, Matthew Johnston. “Investigation of Dielectric Overlayers and Device Processing on Transport and Performance of Epitaxial Graphene Field Effect Transistors.” 2011. Thesis, Penn State University. Accessed March 02, 2021. https://submit-etda.libraries.psu.edu/catalog/12366.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Hollander, Matthew Johnston. “Investigation of Dielectric Overlayers and Device Processing on Transport and Performance of Epitaxial Graphene Field Effect Transistors.” 2011. Web. 02 Mar 2021.

Vancouver:

Hollander MJ. Investigation of Dielectric Overlayers and Device Processing on Transport and Performance of Epitaxial Graphene Field Effect Transistors. [Internet] [Thesis]. Penn State University; 2011. [cited 2021 Mar 02]. Available from: https://submit-etda.libraries.psu.edu/catalog/12366.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hollander MJ. Investigation of Dielectric Overlayers and Device Processing on Transport and Performance of Epitaxial Graphene Field Effect Transistors. [Thesis]. Penn State University; 2011. Available from: https://submit-etda.libraries.psu.edu/catalog/12366

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Université de Grenoble

26. Tachi, Kiichi. Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures.

Degree: Docteur es, Micro et nanoélectronique, 2011, Université de Grenoble

URL: http://www.theses.fr/2011GRENT084

►

Il a été démontré que la structure gate-all-around en nanofils de silicium peut radicalement supprimer les effets de canaux courts. De plus, l'introduction d'espaceurs internes… (more)

Subjects/Keywords: Transistors CMOS; Transistor nanofils; Mobilité; Intégration 3D; CMOS transistors; Nanowire transistors; Mobility; 3D integration; 620

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APA (6^th Edition):

Tachi, K. (2011). Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENT084

Chicago Manual of Style (16^th Edition):

Tachi, Kiichi. “Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed March 02, 2021. http://www.theses.fr/2011GRENT084.

MLA Handbook (7^th Edition):

Tachi, Kiichi. “Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures.” 2011. Web. 02 Mar 2021.

Vancouver:

Tachi K. Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2021 Mar 02]. Available from: http://www.theses.fr/2011GRENT084.

Council of Science Editors:

Tachi K. Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENT084

University of Alberta

27. Doan, My The. Investigation of laterial transistor structures designed as magnetic field sensors.

Degree: MS, Department of Electrical Engineering, 1990, University of Alberta

URL: https://era.library.ualberta.ca/files/6682x6093

Subjects/Keywords: Bipolar transistors.

Record Details Similar Records Cite « Share

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Doan, M. T. (1990). Investigation of laterial transistor structures designed as magnetic field sensors. (Masters Thesis). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/6682x6093

Chicago Manual of Style (16^th Edition):

Doan, My The. “Investigation of laterial transistor structures designed as magnetic field sensors.” 1990. Masters Thesis, University of Alberta. Accessed March 02, 2021. https://era.library.ualberta.ca/files/6682x6093.

MLA Handbook (7^th Edition):

Doan, My The. “Investigation of laterial transistor structures designed as magnetic field sensors.” 1990. Web. 02 Mar 2021.

Vancouver:

Doan MT. Investigation of laterial transistor structures designed as magnetic field sensors. [Internet] [Masters thesis]. University of Alberta; 1990. [cited 2021 Mar 02]. Available from: https://era.library.ualberta.ca/files/6682x6093.

Council of Science Editors:

Doan MT. Investigation of laterial transistor structures designed as magnetic field sensors. [Masters Thesis]. University of Alberta; 1990. Available from: https://era.library.ualberta.ca/files/6682x6093

28. Williams, C. Lea. Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors.

Degree: MS, 1988, Oregon Health Sciences University

URL: doi:10.6083/M4MG7MF5 ; http://digitalcommons.ohsu.edu/etd/266

Subjects/Keywords: Bipolar transistors

Record Details Similar Records Cite « Share

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Williams, C. L. (1988). Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors. (Thesis). Oregon Health Sciences University. Retrieved from doi:10.6083/M4MG7MF5 ; http://digitalcommons.ohsu.edu/etd/266

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Williams, C Lea. “Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors.” 1988. Thesis, Oregon Health Sciences University. Accessed March 02, 2021. doi:10.6083/M4MG7MF5 ; http://digitalcommons.ohsu.edu/etd/266.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Williams, C Lea. “Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors.” 1988. Web. 02 Mar 2021.

Vancouver:

Williams CL. Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors. [Internet] [Thesis]. Oregon Health Sciences University; 1988. [cited 2021 Mar 02]. Available from: doi:10.6083/M4MG7MF5 ; http://digitalcommons.ohsu.edu/etd/266.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Williams CL. Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors. [Thesis]. Oregon Health Sciences University; 1988. Available from: doi:10.6083/M4MG7MF5 ; http://digitalcommons.ohsu.edu/etd/266

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

29. Madani, Hassan. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.

Degree: 2013, Université M'Hamed Bougara Boumerdès

URL: http://dlibrary.univ-boumerdes.dz:8080123456789/1463

►

107 p. : ill. ; 30 cm

Le but de développer des méthodes de caractérisations fiables est de prévoir la dégradation des circuits intégrés fonctionnement… (more)

Subjects/Keywords: Irradiation; MOS (électronique); Transistors MOSFET

Record Details Similar Records Cite « Share

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Madani, H. (2013). Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080123456789/1463

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Madani, Hassan. “Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.” 2013. Thesis, Université M'Hamed Bougara Boumerdès. Accessed March 02, 2021. http://dlibrary.univ-boumerdes.dz:8080123456789/1463.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Madani, Hassan. “Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.” 2013. Web. 02 Mar 2021.

Vancouver:

Madani H. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2013. [cited 2021 Mar 02]. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1463.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Madani H. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. [Thesis]. Université M'Hamed Bougara Boumerdès; 2013. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1463

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Alberta

30. Nathan, Arokia. Carrier transport in magnetotransistors.

Degree: PhD, Department of Electrical Engineering, 1988, University of Alberta

URL: https://era.library.ualberta.ca/files/r781wh77d

Subjects/Keywords: Bipolar transistors.

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Nathan, A. (1988). Carrier transport in magnetotransistors. (Doctoral Dissertation). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/r781wh77d

Chicago Manual of Style (16^th Edition):

Nathan, Arokia. “Carrier transport in magnetotransistors.” 1988. Doctoral Dissertation, University of Alberta. Accessed March 02, 2021. https://era.library.ualberta.ca/files/r781wh77d.

MLA Handbook (7^th Edition):

Nathan, Arokia. “Carrier transport in magnetotransistors.” 1988. Web. 02 Mar 2021.

Vancouver:

Nathan A. Carrier transport in magnetotransistors. [Internet] [Doctoral dissertation]. University of Alberta; 1988. [cited 2021 Mar 02]. Available from: https://era.library.ualberta.ca/files/r781wh77d.

Council of Science Editors:

Nathan A. Carrier transport in magnetotransistors. [Doctoral Dissertation]. University of Alberta; 1988. Available from: https://era.library.ualberta.ca/files/r781wh77d

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Open Access Theses and Dissertations