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You searched for subject:(Total dose effects). Showing records 1 – 23 of 23 total matches.

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Georgia Tech

1. Omprakash, Anup. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.

Degree: MS, Electrical and Computer Engineering, 2016, Georgia Tech

 The objective of this work is to characterize and investigate the effect of extreme environments, such as high temperature (up to 300^∘C) and radiation, on… (more)

Subjects/Keywords: SiGe; SiGe HBTs; High temperature; Total dose effects; Reliability; Thermal instability

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Omprakash, A. (2016). Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58195

Chicago Manual of Style (16th Edition):

Omprakash, Anup. “Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.” 2016. Masters Thesis, Georgia Tech. Accessed September 18, 2019. http://hdl.handle.net/1853/58195.

MLA Handbook (7th Edition):

Omprakash, Anup. “Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.” 2016. Web. 18 Sep 2019.

Vancouver:

Omprakash A. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. [Internet] [Masters thesis]. Georgia Tech; 2016. [cited 2019 Sep 18]. Available from: http://hdl.handle.net/1853/58195.

Council of Science Editors:

Omprakash A. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. [Masters Thesis]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58195


Vanderbilt University

2. Liao, Wenjun. Radiation effects on microelectromechanical systems.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 The effects of ionizing radiation and displacement damage are two significant reliability concerns for transducer applications in radiation environments. Microelectromechanical systems (MEMS) are considered as… (more)

Subjects/Keywords: MEMS; Total-Ionizaton-Dose; Displacement Damage; Piezoelectrc; Electrothermal; 2D Materials; Radiation Effects; Monte Carlo

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APA (6th Edition):

Liao, W. (2018). Radiation effects on microelectromechanical systems. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;

Chicago Manual of Style (16th Edition):

Liao, Wenjun. “Radiation effects on microelectromechanical systems.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed September 18, 2019. http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;.

MLA Handbook (7th Edition):

Liao, Wenjun. “Radiation effects on microelectromechanical systems.” 2018. Web. 18 Sep 2019.

Vancouver:

Liao W. Radiation effects on microelectromechanical systems. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2019 Sep 18]. Available from: http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;.

Council of Science Editors:

Liao W. Radiation effects on microelectromechanical systems. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;


Vanderbilt University

3. Arutt, Charles Nathan. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 A T-shaped, asymmetric, piezoresistive, micromachined, resonating cantilever is used to investigate the effects of 10-keV X-rays on resonance frequency and resistivity. Total-ionizing-dose-induced resonance frequency and… (more)

Subjects/Keywords: Semiconductors; Ionizing Radiation; Total Ionizing Dose; X-rays; Silicon; Hydrogen; MEMS; Resonator; Piezoresistivity; Radiation Effects

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APA (6th Edition):

Arutt, C. N. (2018). Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;

Chicago Manual of Style (16th Edition):

Arutt, Charles Nathan. “Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed September 18, 2019. http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;.

MLA Handbook (7th Edition):

Arutt, Charles Nathan. “Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.” 2018. Web. 18 Sep 2019.

Vancouver:

Arutt CN. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2019 Sep 18]. Available from: http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;.

Council of Science Editors:

Arutt CN. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;


Universidade do Rio Grande do Sul

4. Cardoso, Guilherme Schwanke. Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares.

Degree: 2012, Universidade do Rio Grande do Sul

Este trabalho estuda os efeitos de dose total ionizante (TID – Total Ionizing Dose) em amplificadores operacionais e em seus blocos básicos de construção. A… (more)

Subjects/Keywords: Total ionizing dose (TID); Microeletrônica; Circuitos integrados; Radiation effects in analog circuits; Analog building blocks; Operational amplifiers; Threshold voltage deviations

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APA (6th Edition):

Cardoso, G. S. (2012). Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/61871

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cardoso, Guilherme Schwanke. “Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares.” 2012. Thesis, Universidade do Rio Grande do Sul. Accessed September 18, 2019. http://hdl.handle.net/10183/61871.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cardoso, Guilherme Schwanke. “Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares.” 2012. Web. 18 Sep 2019.

Vancouver:

Cardoso GS. Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2012. [cited 2019 Sep 18]. Available from: http://hdl.handle.net/10183/61871.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cardoso GS. Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares. [Thesis]. Universidade do Rio Grande do Sul; 2012. Available from: http://hdl.handle.net/10183/61871

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade do Rio Grande do Sul

5. Colombo, Dalton Martini. Design of analog integrated circuits aiming characterization of radiation and noise.

Degree: 2015, Universidade do Rio Grande do Sul

This thesis is focused on two challenges faced by analog integrated circuit designers when predicting the reliability of transistors implemented in modern CMOS processes: radiation… (more)

Subjects/Keywords: Microeletrônica; Flicker noise; Radiação; RTS noise; Circuitos integrados; Radiation; Total dose effects; Voltage reference; Oscillators; LC-tank; Bandgap; Threshold voltage

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APA (6th Edition):

Colombo, D. M. (2015). Design of analog integrated circuits aiming characterization of radiation and noise. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/133731

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Colombo, Dalton Martini. “Design of analog integrated circuits aiming characterization of radiation and noise.” 2015. Thesis, Universidade do Rio Grande do Sul. Accessed September 18, 2019. http://hdl.handle.net/10183/133731.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Colombo, Dalton Martini. “Design of analog integrated circuits aiming characterization of radiation and noise.” 2015. Web. 18 Sep 2019.

Vancouver:

Colombo DM. Design of analog integrated circuits aiming characterization of radiation and noise. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2015. [cited 2019 Sep 18]. Available from: http://hdl.handle.net/10183/133731.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Colombo DM. Design of analog integrated circuits aiming characterization of radiation and noise. [Thesis]. Universidade do Rio Grande do Sul; 2015. Available from: http://hdl.handle.net/10183/133731

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

6. Liang, Chundong. Radiation effects and low frequency noise in black phosphorus transistors.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 Black phosphorus (BP) is a promising two-dimensional (2D) semiconductor material for future CMOS technology. Its tunable band gap from 0.3 eV in bulk samples to… (more)

Subjects/Keywords: black phosphorus transistors; radiation effects; low frequency noise; reliability; single event effect; total ionizing dose effect

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APA (6th Edition):

Liang, C. (2018). Radiation effects and low frequency noise in black phosphorus transistors. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-02082018-135155/ ;

Chicago Manual of Style (16th Edition):

Liang, Chundong. “Radiation effects and low frequency noise in black phosphorus transistors.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed September 18, 2019. http://etd.library.vanderbilt.edu/available/etd-02082018-135155/ ;.

MLA Handbook (7th Edition):

Liang, Chundong. “Radiation effects and low frequency noise in black phosphorus transistors.” 2018. Web. 18 Sep 2019.

Vancouver:

Liang C. Radiation effects and low frequency noise in black phosphorus transistors. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2019 Sep 18]. Available from: http://etd.library.vanderbilt.edu/available/etd-02082018-135155/ ;.

Council of Science Editors:

Liang C. Radiation effects and low frequency noise in black phosphorus transistors. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-02082018-135155/ ;


Arizona State University

7. Schlenvogt, Garrett James. Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices.

Degree: MS, Electrical Engineering, 2010, Arizona State University

 Implantable medical device technology is commonly used by doctors for disease management, aiding to improve patient quality of life. However, it is possible for these… (more)

Subjects/Keywords: Electrical Engineering; charge pump; oxide-trapped charge; Radiation Effects; radiation hardening by design; Total Ionizing Dose

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APA (6th Edition):

Schlenvogt, G. J. (2010). Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/8683

Chicago Manual of Style (16th Edition):

Schlenvogt, Garrett James. “Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices.” 2010. Masters Thesis, Arizona State University. Accessed September 18, 2019. http://repository.asu.edu/items/8683.

MLA Handbook (7th Edition):

Schlenvogt, Garrett James. “Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices.” 2010. Web. 18 Sep 2019.

Vancouver:

Schlenvogt GJ. Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices. [Internet] [Masters thesis]. Arizona State University; 2010. [cited 2019 Sep 18]. Available from: http://repository.asu.edu/items/8683.

Council of Science Editors:

Schlenvogt GJ. Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices. [Masters Thesis]. Arizona State University; 2010. Available from: http://repository.asu.edu/items/8683


Universiteit Utrecht

8. Harteveld, M.L. van. Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects.

Degree: 2007, Universiteit Utrecht

 Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects: In this thesis, cataract formation and renal dysfunction as… (more)

Subjects/Keywords: Geneeskunde; total body irradiation; haematological stem cell transplantation; leukemia; non-Hodgkin's lymphoma; Late effects; cataract; renal dysfunction; survival and morbidity; dose-effect relationships; biological effective dose

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APA (6th Edition):

Harteveld, M. L. v. (2007). Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects. (Doctoral Dissertation). Universiteit Utrecht. Retrieved from http://dspace.library.uu.nl:8080/handle/1874/24593

Chicago Manual of Style (16th Edition):

Harteveld, M L van. “Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects.” 2007. Doctoral Dissertation, Universiteit Utrecht. Accessed September 18, 2019. http://dspace.library.uu.nl:8080/handle/1874/24593.

MLA Handbook (7th Edition):

Harteveld, M L van. “Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects.” 2007. Web. 18 Sep 2019.

Vancouver:

Harteveld MLv. Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects. [Internet] [Doctoral dissertation]. Universiteit Utrecht; 2007. [cited 2019 Sep 18]. Available from: http://dspace.library.uu.nl:8080/handle/1874/24593.

Council of Science Editors:

Harteveld MLv. Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects. [Doctoral Dissertation]. Universiteit Utrecht; 2007. Available from: http://dspace.library.uu.nl:8080/handle/1874/24593


Universidade do Rio Grande do Sul

9. Balen, Tiago Roberto. Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção.

Degree: 2010, Universidade do Rio Grande do Sul

 Este trabalho estuda os efeitos da radiação em dispositivos analógicos programáveis (FPAAs, do inglês, Field Programmable Analog Arrays) e técnicas de proteção que podem ser… (more)

Subjects/Keywords: Single event upset (SEU); Circuitos eletrônicos; Total ionizing dose (TID) Field programmable analog arrays (FPAAs); Efeitos da radiação; Radiation effects; Circuitos analógicos; Radiação : Proteção; Self-checking; Radiation hardening techniques

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APA (6th Edition):

Balen, T. R. (2010). Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/27254

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Balen, Tiago Roberto. “Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção.” 2010. Thesis, Universidade do Rio Grande do Sul. Accessed September 18, 2019. http://hdl.handle.net/10183/27254.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Balen, Tiago Roberto. “Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção.” 2010. Web. 18 Sep 2019.

Vancouver:

Balen TR. Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2010. [cited 2019 Sep 18]. Available from: http://hdl.handle.net/10183/27254.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Balen TR. Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção. [Thesis]. Universidade do Rio Grande do Sul; 2010. Available from: http://hdl.handle.net/10183/27254

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade do Rio Grande do Sul

10. Aguilera, Carlos Julio González. Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade.

Degree: 2018, Universidade do Rio Grande do Sul

Este trabalho aborda um sistema de aquisição de dados (SAD) analógico-digital, baseado em um esquema redundante com diversidade de projeto, que é testado em dois… (more)

Subjects/Keywords: Ionizing radiation; Microeletrônica; Diversity; Radiação; Total ionizing dose; Single event effects; Triple modular redundancy; Mixed signals; Programmable system-on-chip; Analog-to-digital converters

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APA (6th Edition):

Aguilera, C. J. G. (2018). Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/179530

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Aguilera, Carlos Julio González. “Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade.” 2018. Thesis, Universidade do Rio Grande do Sul. Accessed September 18, 2019. http://hdl.handle.net/10183/179530.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Aguilera, Carlos Julio González. “Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade.” 2018. Web. 18 Sep 2019.

Vancouver:

Aguilera CJG. Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2018. [cited 2019 Sep 18]. Available from: http://hdl.handle.net/10183/179530.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Aguilera CJG. Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade. [Thesis]. Universidade do Rio Grande do Sul; 2018. Available from: http://hdl.handle.net/10183/179530

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université Montpellier II

11. Roche, Nicolas J-H. Caractérisation et modélisation de l'influence des effets cumulés de l'environnement spatial sur le niveau de vulnérabilité de systèmes spatiaux soumis aux effets transitoires naturels ou issus d'une explosion nucléaire. : Study and modeling of the induced effects by natural space environment on the space systems vulnerability level exposed to natural transient effects or nuclear detonation, Flash-X.

Degree: Docteur es, Génie électrique, électronique, photonique et systèmes, 2010, Université Montpellier II

L'environnement radiatif spatial est composé d'une grande diversité de particules dans un spectre en énergie très large. Parmi les effets affectant les composants électroniques, on… (more)

Subjects/Keywords: Circuits intégrés bipolaires analogiques; Dose ionisante; Tests laser pulsé; Réponse transitoire; Modélisation de circuits intégrés analogiques; Effets des radiations sur l'électronique; Bipolar Analog Integrated Circuits; Total Ionizing Dose; Pulsed-Laser Testing; Transient Response; IntegraModélisation de circuits intéModélisation de circuits intégrés analogiquesgrés analogiquested Circuits Modeling; Trations sur l'électroniqueansients Radiations Effects on Electronics

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APA (6th Edition):

Roche, N. J. (2010). Caractérisation et modélisation de l'influence des effets cumulés de l'environnement spatial sur le niveau de vulnérabilité de systèmes spatiaux soumis aux effets transitoires naturels ou issus d'une explosion nucléaire. : Study and modeling of the induced effects by natural space environment on the space systems vulnerability level exposed to natural transient effects or nuclear detonation, Flash-X. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2010MON20108

Chicago Manual of Style (16th Edition):

Roche, Nicolas J-H. “Caractérisation et modélisation de l'influence des effets cumulés de l'environnement spatial sur le niveau de vulnérabilité de systèmes spatiaux soumis aux effets transitoires naturels ou issus d'une explosion nucléaire. : Study and modeling of the induced effects by natural space environment on the space systems vulnerability level exposed to natural transient effects or nuclear detonation, Flash-X.” 2010. Doctoral Dissertation, Université Montpellier II. Accessed September 18, 2019. http://www.theses.fr/2010MON20108.

MLA Handbook (7th Edition):

Roche, Nicolas J-H. “Caractérisation et modélisation de l'influence des effets cumulés de l'environnement spatial sur le niveau de vulnérabilité de systèmes spatiaux soumis aux effets transitoires naturels ou issus d'une explosion nucléaire. : Study and modeling of the induced effects by natural space environment on the space systems vulnerability level exposed to natural transient effects or nuclear detonation, Flash-X.” 2010. Web. 18 Sep 2019.

Vancouver:

Roche NJ. Caractérisation et modélisation de l'influence des effets cumulés de l'environnement spatial sur le niveau de vulnérabilité de systèmes spatiaux soumis aux effets transitoires naturels ou issus d'une explosion nucléaire. : Study and modeling of the induced effects by natural space environment on the space systems vulnerability level exposed to natural transient effects or nuclear detonation, Flash-X. [Internet] [Doctoral dissertation]. Université Montpellier II; 2010. [cited 2019 Sep 18]. Available from: http://www.theses.fr/2010MON20108.

Council of Science Editors:

Roche NJ. Caractérisation et modélisation de l'influence des effets cumulés de l'environnement spatial sur le niveau de vulnérabilité de systèmes spatiaux soumis aux effets transitoires naturels ou issus d'une explosion nucléaire. : Study and modeling of the induced effects by natural space environment on the space systems vulnerability level exposed to natural transient effects or nuclear detonation, Flash-X. [Doctoral Dissertation]. Université Montpellier II; 2010. Available from: http://www.theses.fr/2010MON20108

12. Harteveld, M.L. van. Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects.

Degree: 2007, University Utrecht

 Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects: In this thesis, cataract formation and renal dysfunction as… (more)

Subjects/Keywords: total body irradiation; haematological stem cell transplantation; leukemia; non-Hodgkin's lymphoma; Late effects; cataract; renal dysfunction; survival and morbidity; dose-effect relationships; biological effective dose

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Harteveld, M. L. v. (2007). Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects. (Doctoral Dissertation). University Utrecht. Retrieved from http://dspace.library.uu.nl/handle/1874/24593 ; URN:NBN:NL:UI:10-1874-24593 ; urn:isbn:978-90-393-4694-5 ; URN:NBN:NL:UI:10-1874-24593 ; http://dspace.library.uu.nl/handle/1874/24593

Chicago Manual of Style (16th Edition):

Harteveld, M L van. “Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects.” 2007. Doctoral Dissertation, University Utrecht. Accessed September 18, 2019. http://dspace.library.uu.nl/handle/1874/24593 ; URN:NBN:NL:UI:10-1874-24593 ; urn:isbn:978-90-393-4694-5 ; URN:NBN:NL:UI:10-1874-24593 ; http://dspace.library.uu.nl/handle/1874/24593.

MLA Handbook (7th Edition):

Harteveld, M L van. “Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects.” 2007. Web. 18 Sep 2019.

Vancouver:

Harteveld MLv. Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects. [Internet] [Doctoral dissertation]. University Utrecht; 2007. [cited 2019 Sep 18]. Available from: http://dspace.library.uu.nl/handle/1874/24593 ; URN:NBN:NL:UI:10-1874-24593 ; urn:isbn:978-90-393-4694-5 ; URN:NBN:NL:UI:10-1874-24593 ; http://dspace.library.uu.nl/handle/1874/24593.

Council of Science Editors:

Harteveld MLv. Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects. [Doctoral Dissertation]. University Utrecht; 2007. Available from: http://dspace.library.uu.nl/handle/1874/24593 ; URN:NBN:NL:UI:10-1874-24593 ; urn:isbn:978-90-393-4694-5 ; URN:NBN:NL:UI:10-1874-24593 ; http://dspace.library.uu.nl/handle/1874/24593

13. Harteveld, M.L. van. Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects.

Degree: 2007, University Utrecht

 Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects: In this thesis, cataract formation and renal dysfunction as… (more)

Subjects/Keywords: total body irradiation; haematological stem cell transplantation; leukemia; non-Hodgkin's lymphoma; Late effects; cataract; renal dysfunction; survival and morbidity; dose-effect relationships; biological effective dose

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APA (6th Edition):

Harteveld, M. L. v. (2007). Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects. (Doctoral Dissertation). University Utrecht. Retrieved from http://dspace.library.uu.nl/handle/1874/24593 ; URN:NBN:NL:UI:10-1874-24593 ; urn:isbn:978-90-393-4694-5 ; URN:NBN:NL:UI:10-1874-24593 ; http://dspace.library.uu.nl/handle/1874/24593

Chicago Manual of Style (16th Edition):

Harteveld, M L van. “Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects.” 2007. Doctoral Dissertation, University Utrecht. Accessed September 18, 2019. http://dspace.library.uu.nl/handle/1874/24593 ; URN:NBN:NL:UI:10-1874-24593 ; urn:isbn:978-90-393-4694-5 ; URN:NBN:NL:UI:10-1874-24593 ; http://dspace.library.uu.nl/handle/1874/24593.

MLA Handbook (7th Edition):

Harteveld, M L van. “Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects.” 2007. Web. 18 Sep 2019.

Vancouver:

Harteveld MLv. Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects. [Internet] [Doctoral dissertation]. University Utrecht; 2007. [cited 2019 Sep 18]. Available from: http://dspace.library.uu.nl/handle/1874/24593 ; URN:NBN:NL:UI:10-1874-24593 ; urn:isbn:978-90-393-4694-5 ; URN:NBN:NL:UI:10-1874-24593 ; http://dspace.library.uu.nl/handle/1874/24593.

Council of Science Editors:

Harteveld MLv. Optimization of total body irradiation: the match between (maximal) leukemic cell kill and (minimal) late effects. [Doctoral Dissertation]. University Utrecht; 2007. Available from: http://dspace.library.uu.nl/handle/1874/24593 ; URN:NBN:NL:UI:10-1874-24593 ; urn:isbn:978-90-393-4694-5 ; URN:NBN:NL:UI:10-1874-24593 ; http://dspace.library.uu.nl/handle/1874/24593


Georgia Tech

14. Sutton, Akil K. Displacement Damage and Ionization Effects in Advanced Silicon-Germanium Heterojunction Bipolar Transistors.

Degree: MS, Electrical and Computer Engineering, 2005, Georgia Tech

 A summary of total dose effects observe in advanced Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) is presented in this work. The principal driving froces… (more)

Subjects/Keywords: SiGe HBTs; Total dose effects; Transistors Effect of radiation on; Heterojunctions Effect of radiation on

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APA (6th Edition):

Sutton, A. K. (2005). Displacement Damage and Ionization Effects in Advanced Silicon-Germanium Heterojunction Bipolar Transistors. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/7217

Chicago Manual of Style (16th Edition):

Sutton, Akil K. “Displacement Damage and Ionization Effects in Advanced Silicon-Germanium Heterojunction Bipolar Transistors.” 2005. Masters Thesis, Georgia Tech. Accessed September 18, 2019. http://hdl.handle.net/1853/7217.

MLA Handbook (7th Edition):

Sutton, Akil K. “Displacement Damage and Ionization Effects in Advanced Silicon-Germanium Heterojunction Bipolar Transistors.” 2005. Web. 18 Sep 2019.

Vancouver:

Sutton AK. Displacement Damage and Ionization Effects in Advanced Silicon-Germanium Heterojunction Bipolar Transistors. [Internet] [Masters thesis]. Georgia Tech; 2005. [cited 2019 Sep 18]. Available from: http://hdl.handle.net/1853/7217.

Council of Science Editors:

Sutton AK. Displacement Damage and Ionization Effects in Advanced Silicon-Germanium Heterojunction Bipolar Transistors. [Masters Thesis]. Georgia Tech; 2005. Available from: http://hdl.handle.net/1853/7217


Universidade do Rio Grande do Sul

15. Tambara, Lucas Antunes. Caracterização de circuitos programáveis e sistemas em chip sob radiação.

Degree: 2013, Universidade do Rio Grande do Sul

Este trabalho consiste em um estudo acerca dos efeitos da radiação em circuitos programáveis e sistemas em chip, do inglês System-on-Chip (SoC), baseados em FPGAs… (more)

Subjects/Keywords: Efeitos da radiação; System-on-chips (SoCs); Field-programmable gate arrays (FPGAs); Tolerância a falhas; Tolerância à radiação; Fault tolerance; Radiation tolerance; SoC; Total ionizing dose (TID); Circuitos integrados; Single event effects (SEEs)

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APA (6th Edition):

Tambara, L. A. (2013). Caracterização de circuitos programáveis e sistemas em chip sob radiação. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/86477

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tambara, Lucas Antunes. “Caracterização de circuitos programáveis e sistemas em chip sob radiação.” 2013. Thesis, Universidade do Rio Grande do Sul. Accessed September 18, 2019. http://hdl.handle.net/10183/86477.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tambara, Lucas Antunes. “Caracterização de circuitos programáveis e sistemas em chip sob radiação.” 2013. Web. 18 Sep 2019.

Vancouver:

Tambara LA. Caracterização de circuitos programáveis e sistemas em chip sob radiação. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2013. [cited 2019 Sep 18]. Available from: http://hdl.handle.net/10183/86477.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tambara LA. Caracterização de circuitos programáveis e sistemas em chip sob radiação. [Thesis]. Universidade do Rio Grande do Sul; 2013. Available from: http://hdl.handle.net/10183/86477

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

16. Chatterjee, Indranil. Geometric Dependence of the Total Ionizing Dose Response of FinFETs.

Degree: PhD, Electrical Engineering, 2014, Vanderbilt University

 The total ionizing dose induced degradation in advanced deep-submicron CMOS technologies has been significantly reduced by scaling. Damage to isolating field oxides remains a significant… (more)

Subjects/Keywords: Total dose effects; Isolation oxides; Bulk FinFET; SOI FinFET; Parasitic transistor; Oxide traps; Charge trapping

total ionizing dose (TID) effects, displacement damage (DD) and single… …work focuses on the total ionizing dose effects in advanced technology nodes. The following… …total ionizing dose effects [Swif-94]. 3.4 Displacement Damage Displacement damage… …acceptors or the defectassisted tunneling of carriers [Srou-88]. 3.5 Total Dose Effects… …processes governing the response of MOS devices to total-dose ionizing radiation. 21 3.3 Charge… 

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APA (6th Edition):

Chatterjee, I. (2014). Geometric Dependence of the Total Ionizing Dose Response of FinFETs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07312014-201221/ ;

Chicago Manual of Style (16th Edition):

Chatterjee, Indranil. “Geometric Dependence of the Total Ionizing Dose Response of FinFETs.” 2014. Doctoral Dissertation, Vanderbilt University. Accessed September 18, 2019. http://etd.library.vanderbilt.edu/available/etd-07312014-201221/ ;.

MLA Handbook (7th Edition):

Chatterjee, Indranil. “Geometric Dependence of the Total Ionizing Dose Response of FinFETs.” 2014. Web. 18 Sep 2019.

Vancouver:

Chatterjee I. Geometric Dependence of the Total Ionizing Dose Response of FinFETs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2014. [cited 2019 Sep 18]. Available from: http://etd.library.vanderbilt.edu/available/etd-07312014-201221/ ;.

Council of Science Editors:

Chatterjee I. Geometric Dependence of the Total Ionizing Dose Response of FinFETs. [Doctoral Dissertation]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-07312014-201221/ ;

17. Zhang, Xuan (Cher). Reliability and irradiation effects of 4H-SiC MOS devices.

Degree: PhD, Electrical Engineering, 2013, Vanderbilt University

 Bias-temperature-instabilities (BTIs) and total ionizing dose effects are investigated for 4H-SiC MOS devices. Low frequency noise measurements are employed to help understand the nature of… (more)

Subjects/Keywords: bias temperature instabilities; SiC MOS devices; 1/f noise; total ionizing dose effects

…consistent with total ionizing dose effects on Si/SiO2 devices, with radiationinduced-hole trapping… …59 43. Drain current ID as a function of gate voltage VG at varying total dose and… …60 44. ΔNot as a function of total dose for a SiC nMOSFET device with W/L = 400 µm/400 µm… …the midgap voltage shift is plotted as a function of total dose for devices biased at ± 0.8… …discussion A. Total dose results for n- and p-substrate capacitors High-frequency (100 kHz… 

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APA (6th Edition):

Zhang, X. (. (2013). Reliability and irradiation effects of 4H-SiC MOS devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04152013-101211/ ;

Chicago Manual of Style (16th Edition):

Zhang, Xuan (Cher). “Reliability and irradiation effects of 4H-SiC MOS devices.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed September 18, 2019. http://etd.library.vanderbilt.edu/available/etd-04152013-101211/ ;.

MLA Handbook (7th Edition):

Zhang, Xuan (Cher). “Reliability and irradiation effects of 4H-SiC MOS devices.” 2013. Web. 18 Sep 2019.

Vancouver:

Zhang X(. Reliability and irradiation effects of 4H-SiC MOS devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2019 Sep 18]. Available from: http://etd.library.vanderbilt.edu/available/etd-04152013-101211/ ;.

Council of Science Editors:

Zhang X(. Reliability and irradiation effects of 4H-SiC MOS devices. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://etd.library.vanderbilt.edu/available/etd-04152013-101211/ ;

18. Diggins, Zachary John. System Health Awareness in Total-Ionizing Dose Environments.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 There is increasing interest in using commercial-off-the-shelf (COTS) electronics in radiation environments, such as robotic systems for remediation after the nuclear accident at Fukushima or… (more)

Subjects/Keywords: bayesian network; commercial-off-the-shelf; robotics; total-ionizing dose; radiation hardness assurance; radiation effects

effects of total ionizing dose (TID) on semiconductor devices exist [9]… …status of Line Tracking and Total Ionizing Dose distributions… …most influenced by Total Ionizing Dose, which is the logical outcome for this system topology… …studies for multiple robotic systems. The report identifies total ionizing dose (TID)… …scales [8-10]. It is difficult to track the effects of the accumulated dose on the… 

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APA (6th Edition):

Diggins, Z. J. (2016). System Health Awareness in Total-Ionizing Dose Environments. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11212016-025249/ ;

Chicago Manual of Style (16th Edition):

Diggins, Zachary John. “System Health Awareness in Total-Ionizing Dose Environments.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed September 18, 2019. http://etd.library.vanderbilt.edu/available/etd-11212016-025249/ ;.

MLA Handbook (7th Edition):

Diggins, Zachary John. “System Health Awareness in Total-Ionizing Dose Environments.” 2016. Web. 18 Sep 2019.

Vancouver:

Diggins ZJ. System Health Awareness in Total-Ionizing Dose Environments. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2019 Sep 18]. Available from: http://etd.library.vanderbilt.edu/available/etd-11212016-025249/ ;.

Council of Science Editors:

Diggins ZJ. System Health Awareness in Total-Ionizing Dose Environments. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://etd.library.vanderbilt.edu/available/etd-11212016-025249/ ;


University of Florida

19. Park, Hyunwoo. Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation.

Degree: PhD, Electrical and Computer Engineering, 2011, University of Florida

 Uniaxial strained-silicon (Si) has emerged as a leading technique for enhancing transistor performance for sub-100 nm logic technology for use in commercial and consumer electronics.… (more)

Subjects/Keywords: Compressive stress; Diodes; Electric current; Electrons; Lasers; Mechanical stress; Simulations; Stress functions; Tensile stress; Threshold voltage; dielectrics  – effects  – events  – high-k  – radiation  – single  – strained-si  – stress  – total-ionizing-dose  – transients  – uniaxial

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APA (6th Edition):

Park, H. (2011). Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0043566

Chicago Manual of Style (16th Edition):

Park, Hyunwoo. “Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation.” 2011. Doctoral Dissertation, University of Florida. Accessed September 18, 2019. http://ufdc.ufl.edu/UFE0043566.

MLA Handbook (7th Edition):

Park, Hyunwoo. “Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation.” 2011. Web. 18 Sep 2019.

Vancouver:

Park H. Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation. [Internet] [Doctoral dissertation]. University of Florida; 2011. [cited 2019 Sep 18]. Available from: http://ufdc.ufl.edu/UFE0043566.

Council of Science Editors:

Park H. Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation. [Doctoral Dissertation]. University of Florida; 2011. Available from: http://ufdc.ufl.edu/UFE0043566


Georgia Tech

20. Moen, Kurt Andrew. Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications.

Degree: MS, Electrical and Computer Engineering, 2008, Georgia Tech

 This work presents a summary of experimental data and theoretical models that characterize the temperature-dependent behavior of key carrier-transport parameters in silicon down to cryogenic… (more)

Subjects/Keywords: TID; Total dose effects; SRH; Ion strike; Lifetime spectroscopy; Minority carrier lifetime; Resistivity model; Mobility model; Low temperature engineering; Materials at low temperatures; Microwave circuits

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APA (6th Edition):

Moen, K. A. (2008). Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/26642

Chicago Manual of Style (16th Edition):

Moen, Kurt Andrew. “Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications.” 2008. Masters Thesis, Georgia Tech. Accessed September 18, 2019. http://hdl.handle.net/1853/26642.

MLA Handbook (7th Edition):

Moen, Kurt Andrew. “Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications.” 2008. Web. 18 Sep 2019.

Vancouver:

Moen KA. Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications. [Internet] [Masters thesis]. Georgia Tech; 2008. [cited 2019 Sep 18]. Available from: http://hdl.handle.net/1853/26642.

Council of Science Editors:

Moen KA. Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications. [Masters Thesis]. Georgia Tech; 2008. Available from: http://hdl.handle.net/1853/26642

21. Inanlou, Farzad Michael-David. Innovative transceiver approaches for low-power near-field and far-field applications.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 Wireless operation, near-field or far-field, is a core functionality of any mobile or autonomous system. These systems are battery operated or most often utilize energy… (more)

Subjects/Keywords: Wireless; Transceiver; Radar; Low-power; Wide-band; Millimeter-wave; System on chip; Remote sensing; Phased-array; Implantable Medical Devices; Near-field; Communications; Space-based transceivers; SiGe; BiCMOS; CMOS; Integrated circuits; RF; Radiation effects; Total ionizing dose; High-altitude; Transcutaneous telemetry; Data telemetry; low-voltage; Low noise Amplifier; X-band; K-band; Ku-band; W-band; Impulse radio; Ultra wideband; Inductive link

…generator and investigated total ionizing dose effects aimed at low-power space-based/high… …Gaussian pulse generator and investigated total ionizing dose effects aimed at low-power space… …division of labor. In the present work, we investigate, for the first time, total dose effects on… …has a 6-layer metal stackup. Total dose effects were examined using 10-keV X-rays. Fig. 11… …total dose. The rebound effect can be seen beyond one Mrad… 

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APA (6th Edition):

Inanlou, F. M. (2014). Innovative transceiver approaches for low-power near-field and far-field applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/52245

Chicago Manual of Style (16th Edition):

Inanlou, Farzad Michael-David. “Innovative transceiver approaches for low-power near-field and far-field applications.” 2014. Doctoral Dissertation, Georgia Tech. Accessed September 18, 2019. http://hdl.handle.net/1853/52245.

MLA Handbook (7th Edition):

Inanlou, Farzad Michael-David. “Innovative transceiver approaches for low-power near-field and far-field applications.” 2014. Web. 18 Sep 2019.

Vancouver:

Inanlou FM. Innovative transceiver approaches for low-power near-field and far-field applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Sep 18]. Available from: http://hdl.handle.net/1853/52245.

Council of Science Editors:

Inanlou FM. Innovative transceiver approaches for low-power near-field and far-field applications. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/52245

22. Lourenco, Nelson Estacio. An assessment of silicon-germanium BiCMOS technologies for extreme environment applications.

Degree: MS, Electrical and Computer Engineering, 2012, Georgia Tech

 This thesis evaluates the suitability of silicon-germanium technology for electronic systems intended for extreme environments, such as ambient temperatures outside of military specification (-55 degC… (more)

Subjects/Keywords: Silicon-germanium; Extreme environments; Heterojunction bipolar transistor; Space environments; Total ionizing dose; Radiation tolerant; Single event effects; Semiconductors; Electronics Materials; Germanium Effect of radiation on; Silicon alloys Effect of radiation on; Metal oxide semiconductors, Complementary; Silicon alloys Effect of temperature on

…IB+ vs. total dose for LM111 voltage comparators, highlighting ELDRS effects (after… …reviewed. The concepts of total ionizing dose (TID) and single event effects (SEE… …nucl) Effects TID >105 cm-2 s-1 DDD SEE Total Ionizing Dose (TID). While… …major physical processes underlying total ionizing dose (TID) degradation (… …BiCMOS process. The total dose and transient response of this highlyscaled SiGe technology are… 

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APA (6th Edition):

Lourenco, N. E. (2012). An assessment of silicon-germanium BiCMOS technologies for extreme environment applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/45959

Chicago Manual of Style (16th Edition):

Lourenco, Nelson Estacio. “An assessment of silicon-germanium BiCMOS technologies for extreme environment applications.” 2012. Masters Thesis, Georgia Tech. Accessed September 18, 2019. http://hdl.handle.net/1853/45959.

MLA Handbook (7th Edition):

Lourenco, Nelson Estacio. “An assessment of silicon-germanium BiCMOS technologies for extreme environment applications.” 2012. Web. 18 Sep 2019.

Vancouver:

Lourenco NE. An assessment of silicon-germanium BiCMOS technologies for extreme environment applications. [Internet] [Masters thesis]. Georgia Tech; 2012. [cited 2019 Sep 18]. Available from: http://hdl.handle.net/1853/45959.

Council of Science Editors:

Lourenco NE. An assessment of silicon-germanium BiCMOS technologies for extreme environment applications. [Masters Thesis]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/45959

23. Cardoso, Adilson Silva. Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 State-of-the-art SiGe BiCMOS technologies leverage the maturity of deep-submicron silicon CMOS processing with bandgap-engineered SiGe HBTs in a single platform that is suitable for a… (more)

Subjects/Keywords: SiGe; RF switches; BiCMOS; FET-based; SOI; PIN diode; BiCMOS circuits; Radiation hardening by design; Transient response; Transient radiation effects; Extreme environments; Mixed-signal circuits; Silicon-germanium; Single-pole single-throw(SPST); Single-pole four-throw(SP4T); Single-pole double-throw(SPDT); Voltage references; Cryogenic temperatures; Large-signal linearity; Non-linearities; SiGe heterojunction bipolar transistors (HBTs); Small-signal linearity; Large-signal linearity; Radiation; Single event transient (SET); Total ionizing dose (TID); Radiation; Precision voltage reference; Bandgap reference (BGR); Bulk FET

total dose. [7, 8]. xviii • A detailed study on the effects of single event… …first-order BGR irradiated at room temperature as a function of total accumulated dose for… …116 Figure 75 Voltage reference circuits comparison plotted as functions of total dose and… …improve with cooling [5, 6]. • The impact of total ionizing dose (TID) on… …transients (SETs) and total ionization dose (TID) on precision voltage… 

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APA (6th Edition):

Cardoso, A. S. (2014). Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53099

Chicago Manual of Style (16th Edition):

Cardoso, Adilson Silva. “Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications.” 2014. Doctoral Dissertation, Georgia Tech. Accessed September 18, 2019. http://hdl.handle.net/1853/53099.

MLA Handbook (7th Edition):

Cardoso, Adilson Silva. “Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications.” 2014. Web. 18 Sep 2019.

Vancouver:

Cardoso AS. Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Sep 18]. Available from: http://hdl.handle.net/1853/53099.

Council of Science Editors:

Cardoso AS. Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/53099

.