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You searched for subject:(Total Ionizing). Showing records 1 – 29 of 29 total matches.

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Vanderbilt University

1. Rezzak, Nadia. The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current.

Degree: MS, Electrical Engineering, 2010, Vanderbilt University

 Scaling of gate oxides in bulk complementary metalâoxideâsemiconductor (CMOS) devices to thinner dimensions has reduced the significance of threshold-voltage shifts due to total-ionizing dose (TID)… (more)

Subjects/Keywords: Total ionizing dose

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APA (6th Edition):

Rezzak, N. (2010). The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03312010-122226/ ;

Chicago Manual of Style (16th Edition):

Rezzak, Nadia. “The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current.” 2010. Masters Thesis, Vanderbilt University. Accessed April 24, 2019. http://etd.library.vanderbilt.edu/available/etd-03312010-122226/ ;.

MLA Handbook (7th Edition):

Rezzak, Nadia. “The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current.” 2010. Web. 24 Apr 2019.

Vancouver:

Rezzak N. The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current. [Internet] [Masters thesis]. Vanderbilt University; 2010. [cited 2019 Apr 24]. Available from: http://etd.library.vanderbilt.edu/available/etd-03312010-122226/ ;.

Council of Science Editors:

Rezzak N. The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current. [Masters Thesis]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-03312010-122226/ ;


Universidade do Rio Grande do Sul

2. Both, Thiago Hanna. Análise dos efeitos de dose total ionizante em transistores CMOS tecnologia 0,35 μm.

Degree: 2013, Universidade do Rio Grande do Sul

Este trabalho apresenta um estudo sobre a degradação de parâmetros elétricos de transistores CMOS tecnologia 0,35 μm, fabricados com o processo AMS C35B4, devido aos… (more)

Subjects/Keywords: Radiação ionizante; Ionizing radiation; TID; Cmos; Transistores; Total ionizing dose

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APA (6th Edition):

Both, T. H. (2013). Análise dos efeitos de dose total ionizante em transistores CMOS tecnologia 0,35 μm. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/115558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Both, Thiago Hanna. “Análise dos efeitos de dose total ionizante em transistores CMOS tecnologia 0,35 μm.” 2013. Thesis, Universidade do Rio Grande do Sul. Accessed April 24, 2019. http://hdl.handle.net/10183/115558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Both, Thiago Hanna. “Análise dos efeitos de dose total ionizante em transistores CMOS tecnologia 0,35 μm.” 2013. Web. 24 Apr 2019.

Vancouver:

Both TH. Análise dos efeitos de dose total ionizante em transistores CMOS tecnologia 0,35 μm. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2013. [cited 2019 Apr 24]. Available from: http://hdl.handle.net/10183/115558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Both TH. Análise dos efeitos de dose total ionizante em transistores CMOS tecnologia 0,35 μm. [Thesis]. Universidade do Rio Grande do Sul; 2013. Available from: http://hdl.handle.net/10183/115558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

3. Arutt, Charles Nathan. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 A T-shaped, asymmetric, piezoresistive, micromachined, resonating cantilever is used to investigate the effects of 10-keV X-rays on resonance frequency and resistivity. Total-ionizing-dose-induced resonance frequency and… (more)

Subjects/Keywords: Semiconductors; Ionizing Radiation; Total Ionizing Dose; X-rays; Silicon; Hydrogen; MEMS; Resonator; Piezoresistivity; Radiation Effects

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APA (6th Edition):

Arutt, C. N. (2018). Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;

Chicago Manual of Style (16th Edition):

Arutt, Charles Nathan. “Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed April 24, 2019. http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;.

MLA Handbook (7th Edition):

Arutt, Charles Nathan. “Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.” 2018. Web. 24 Apr 2019.

Vancouver:

Arutt CN. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2019 Apr 24]. Available from: http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;.

Council of Science Editors:

Arutt CN. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;


Universidade do Rio Grande do Sul

4. Rossetto, Alan Carlos Junior. Análise dos efeitos de dose total ionizante em circuitos analógicos CMOS.

Degree: 2014, Universidade do Rio Grande do Sul

Este trabalho apresenta um estudo sobre o comportamento de circuitos analógicos CMOS quando sujeitos aos efeitos de dose total ionizante. Os efeitos de dose total(more)

Subjects/Keywords: Radiação ionizante; Analog circuits; Radiation; Cmos; Circuitos analógicos; Total ionizing dose

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APA (6th Edition):

Rossetto, A. C. J. (2014). Análise dos efeitos de dose total ionizante em circuitos analógicos CMOS. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/115557

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rossetto, Alan Carlos Junior. “Análise dos efeitos de dose total ionizante em circuitos analógicos CMOS.” 2014. Thesis, Universidade do Rio Grande do Sul. Accessed April 24, 2019. http://hdl.handle.net/10183/115557.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rossetto, Alan Carlos Junior. “Análise dos efeitos de dose total ionizante em circuitos analógicos CMOS.” 2014. Web. 24 Apr 2019.

Vancouver:

Rossetto ACJ. Análise dos efeitos de dose total ionizante em circuitos analógicos CMOS. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2014. [cited 2019 Apr 24]. Available from: http://hdl.handle.net/10183/115557.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rossetto ACJ. Análise dos efeitos de dose total ionizante em circuitos analógicos CMOS. [Thesis]. Universidade do Rio Grande do Sul; 2014. Available from: http://hdl.handle.net/10183/115557

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

5. Zhang, Xuan (Cher). Total ionizing dose radiation effects on germanium pMOS devices.

Degree: MS, Electrical Engineering, 2010, Vanderbilt University

 Radiation effects on Ge pMOS devices have been presented in this thesis. The irradiation and annealing responses of Ge pMOSFETs are investigated as a function… (more)

Subjects/Keywords: total ionizing dose; germanium

…basic mechanisms of total ionizing dose effects and low-frequency noise analysis. Chapter II… …Ge-pMOSFETs. Chapter V summarizes and concludes the work. 1. Total ionizing dose effects… …radiation such as electrons, protons, and heavy ions. Total ionizing dose irradiation remains a… …x5D;. 1 i) Basic mechanisms of total ionizing dose irradiation Fig. 1.1(a… …irradiated Ge pMOS device. 6 Fig. 1.6. Mobility as a function of total ionizing dose. After… 

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APA (6th Edition):

Zhang, X. (. (2010). Total ionizing dose radiation effects on germanium pMOS devices. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12212010-151102/ ;

Chicago Manual of Style (16th Edition):

Zhang, Xuan (Cher). “Total ionizing dose radiation effects on germanium pMOS devices.” 2010. Masters Thesis, Vanderbilt University. Accessed April 24, 2019. http://etd.library.vanderbilt.edu/available/etd-12212010-151102/ ;.

MLA Handbook (7th Edition):

Zhang, Xuan (Cher). “Total ionizing dose radiation effects on germanium pMOS devices.” 2010. Web. 24 Apr 2019.

Vancouver:

Zhang X(. Total ionizing dose radiation effects on germanium pMOS devices. [Internet] [Masters thesis]. Vanderbilt University; 2010. [cited 2019 Apr 24]. Available from: http://etd.library.vanderbilt.edu/available/etd-12212010-151102/ ;.

Council of Science Editors:

Zhang X(. Total ionizing dose radiation effects on germanium pMOS devices. [Masters Thesis]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-12212010-151102/ ;


Universidade do Rio Grande do Sul

6. Fusco, Daniel Alves. Efeitos da radiação ionizante e eventos singulares em circuitos analógicos de baixo e ultra baixo consumo.

Degree: 2016, Universidade do Rio Grande do Sul

Esse trabalho apresenta um estudo sobre os efeitos de radiação em circuitos analógicos de baixa e ultra baixa potência e tensão, identificando as fragilidades destes… (more)

Subjects/Keywords: Microelectronics; Circuitos analógicos; Low power; Simulação elétrica; Radiação ionizante; Ionizing radiation; Total dose; Single events

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APA (6th Edition):

Fusco, D. A. (2016). Efeitos da radiação ionizante e eventos singulares em circuitos analógicos de baixo e ultra baixo consumo. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/147756

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Fusco, Daniel Alves. “Efeitos da radiação ionizante e eventos singulares em circuitos analógicos de baixo e ultra baixo consumo.” 2016. Thesis, Universidade do Rio Grande do Sul. Accessed April 24, 2019. http://hdl.handle.net/10183/147756.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Fusco, Daniel Alves. “Efeitos da radiação ionizante e eventos singulares em circuitos analógicos de baixo e ultra baixo consumo.” 2016. Web. 24 Apr 2019.

Vancouver:

Fusco DA. Efeitos da radiação ionizante e eventos singulares em circuitos analógicos de baixo e ultra baixo consumo. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2016. [cited 2019 Apr 24]. Available from: http://hdl.handle.net/10183/147756.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Fusco DA. Efeitos da radiação ionizante e eventos singulares em circuitos analógicos de baixo e ultra baixo consumo. [Thesis]. Universidade do Rio Grande do Sul; 2016. Available from: http://hdl.handle.net/10183/147756

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

7. Wang, Pengfei. X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices.

Degree: MS, Electrical Engineering, 2017, Vanderbilt University

Total ionizing dose effects are investigated on a physically unclonable function (PUF) based on CMOS breakdown. Devices irradiated to 2.0 Mrad(SiO2) show less than 11%… (more)

Subjects/Keywords: X-ray; total ionizing dose; proton; oxide breakdown; physically unclonable function; hardware security

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APA (6th Edition):

Wang, P. (2017). X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11172017-143451/ ;

Chicago Manual of Style (16th Edition):

Wang, Pengfei. “X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices.” 2017. Masters Thesis, Vanderbilt University. Accessed April 24, 2019. http://etd.library.vanderbilt.edu/available/etd-11172017-143451/ ;.

MLA Handbook (7th Edition):

Wang, Pengfei. “X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices.” 2017. Web. 24 Apr 2019.

Vancouver:

Wang P. X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. [Internet] [Masters thesis]. Vanderbilt University; 2017. [cited 2019 Apr 24]. Available from: http://etd.library.vanderbilt.edu/available/etd-11172017-143451/ ;.

Council of Science Editors:

Wang P. X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. [Masters Thesis]. Vanderbilt University; 2017. Available from: http://etd.library.vanderbilt.edu/available/etd-11172017-143451/ ;


Universidade do Rio Grande do Sul

8. Aguilera, Carlos Julio González. Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade.

Degree: 2018, Universidade do Rio Grande do Sul

Este trabalho aborda um sistema de aquisição de dados (SAD) analógico-digital, baseado em um esquema redundante com diversidade de projeto, que é testado em dois… (more)

Subjects/Keywords: Ionizing radiation; Microeletrônica; Diversity; Radiação; Total ionizing dose; Single event effects; Triple modular redundancy; Mixed signals; Programmable system-on-chip; Analog-to-digital converters

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APA (6th Edition):

Aguilera, C. J. G. (2018). Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/179530

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Aguilera, Carlos Julio González. “Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade.” 2018. Thesis, Universidade do Rio Grande do Sul. Accessed April 24, 2019. http://hdl.handle.net/10183/179530.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Aguilera, Carlos Julio González. “Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade.” 2018. Web. 24 Apr 2019.

Vancouver:

Aguilera CJG. Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2018. [cited 2019 Apr 24]. Available from: http://hdl.handle.net/10183/179530.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Aguilera CJG. Avaliação de conversores AD sob efeitos de radiação e mitigação utilizando redundância com diversidade. [Thesis]. Universidade do Rio Grande do Sul; 2018. Available from: http://hdl.handle.net/10183/179530

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade do Rio Grande do Sul

9. Cardoso, Guilherme Schwanke. Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares.

Degree: 2012, Universidade do Rio Grande do Sul

Este trabalho estuda os efeitos de dose total ionizante (TID – Total Ionizing Dose) em amplificadores operacionais e em seus blocos básicos de construção. A… (more)

Subjects/Keywords: Total ionizing dose (TID); Microeletrônica; Circuitos integrados; Radiation effects in analog circuits; Analog building blocks; Operational amplifiers; Threshold voltage deviations

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APA (6th Edition):

Cardoso, G. S. (2012). Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/61871

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cardoso, Guilherme Schwanke. “Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares.” 2012. Thesis, Universidade do Rio Grande do Sul. Accessed April 24, 2019. http://hdl.handle.net/10183/61871.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cardoso, Guilherme Schwanke. “Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares.” 2012. Web. 24 Apr 2019.

Vancouver:

Cardoso GS. Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2012. [cited 2019 Apr 24]. Available from: http://hdl.handle.net/10183/61871.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cardoso GS. Impacto dos desvios de tensão de limiar induzidos por radiação ionizante no desempenho dos blocos básicos de dois amplificadores operacionais complementares. [Thesis]. Universidade do Rio Grande do Sul; 2012. Available from: http://hdl.handle.net/10183/61871

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade do Rio Grande do Sul

10. Grisales, Catalina Aguirre. Análises dos transistores de porta flutuante : modelamento e impacto do efeito de doses total ionizante.

Degree: 2013, Universidade do Rio Grande do Sul

Nesta dissertação é apresentado o estudo dos transistores de porta flutuante (Floating Gate Transistor - FG Transistor), sua modelagem, e a análise do efeito da… (more)

Subjects/Keywords: Floating gate transistor; Transistores; MOS transistor; Simulação numérica; Total ionizing dose; Threshold voltage; Charge retention; Capacitive coupling coefficient

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APA (6th Edition):

Grisales, C. A. (2013). Análises dos transistores de porta flutuante : modelamento e impacto do efeito de doses total ionizante. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/96480

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Grisales, Catalina Aguirre. “Análises dos transistores de porta flutuante : modelamento e impacto do efeito de doses total ionizante.” 2013. Thesis, Universidade do Rio Grande do Sul. Accessed April 24, 2019. http://hdl.handle.net/10183/96480.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Grisales, Catalina Aguirre. “Análises dos transistores de porta flutuante : modelamento e impacto do efeito de doses total ionizante.” 2013. Web. 24 Apr 2019.

Vancouver:

Grisales CA. Análises dos transistores de porta flutuante : modelamento e impacto do efeito de doses total ionizante. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2013. [cited 2019 Apr 24]. Available from: http://hdl.handle.net/10183/96480.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Grisales CA. Análises dos transistores de porta flutuante : modelamento e impacto do efeito de doses total ionizante. [Thesis]. Universidade do Rio Grande do Sul; 2013. Available from: http://hdl.handle.net/10183/96480

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Arizona State University

11. Schlenvogt, Garrett James. Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices.

Degree: MS, Electrical Engineering, 2010, Arizona State University

 Implantable medical device technology is commonly used by doctors for disease management, aiding to improve patient quality of life. However, it is possible for these… (more)

Subjects/Keywords: Electrical Engineering; charge pump; oxide-trapped charge; Radiation Effects; radiation hardening by design; Total Ionizing Dose

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APA (6th Edition):

Schlenvogt, G. J. (2010). Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/8683

Chicago Manual of Style (16th Edition):

Schlenvogt, Garrett James. “Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices.” 2010. Masters Thesis, Arizona State University. Accessed April 24, 2019. http://repository.asu.edu/items/8683.

MLA Handbook (7th Edition):

Schlenvogt, Garrett James. “Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices.” 2010. Web. 24 Apr 2019.

Vancouver:

Schlenvogt GJ. Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices. [Internet] [Masters thesis]. Arizona State University; 2010. [cited 2019 Apr 24]. Available from: http://repository.asu.edu/items/8683.

Council of Science Editors:

Schlenvogt GJ. Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices. [Masters Thesis]. Arizona State University; 2010. Available from: http://repository.asu.edu/items/8683


Arizona State University

12. Tolleson, Blayne S. Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors.

Degree: Electrical Engineering, 2017, Arizona State University

 A modeling platform for predicting total ionizing dose (TID) and dose rate response of commercial commercial-off-the-shelf (COTS) linear bipolar circuits and technologies is introduced. Tasks… (more)

Subjects/Keywords: Electrical engineering; base current; current gain; interface traps; lateral PNP bipolar junction transistor; surface recombination velocity; total ionizing dose

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APA (6th Edition):

Tolleson, B. S. (2017). Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/46303

Chicago Manual of Style (16th Edition):

Tolleson, Blayne S. “Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors.” 2017. Masters Thesis, Arizona State University. Accessed April 24, 2019. http://repository.asu.edu/items/46303.

MLA Handbook (7th Edition):

Tolleson, Blayne S. “Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors.” 2017. Web. 24 Apr 2019.

Vancouver:

Tolleson BS. Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. [Internet] [Masters thesis]. Arizona State University; 2017. [cited 2019 Apr 24]. Available from: http://repository.asu.edu/items/46303.

Council of Science Editors:

Tolleson BS. Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. [Masters Thesis]. Arizona State University; 2017. Available from: http://repository.asu.edu/items/46303


Université Montpellier II

13. Doridant, Adrien. Transistor bipolaire basse fréquence pour application spatiale et de défense soumis à une double agression onde électromagnétique : - dose Ionisante : Bipolar Transistor for Low Frequency Space Application and Defense subject to a double aggression Electromagnetic wave - Total Ionizing Dose.

Degree: Docteur es, Electronique, 2013, Université Montpellier II

Aujourd'hui les circuits intégrés commerciaux sont de plus en plus utilisés dans les satellites de télécommunication ou d'observation. En effet les contraintes économiques imposent l'usage… (more)

Subjects/Keywords: Transistor Bipolaire; Intérence champ proche; Dose ionisante; Susceptibilité Electromagnetique; Bipolar Transistor; Near-field Interference; Total Ionizing Dose; Electromagnetic Susceptibility

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APA (6th Edition):

Doridant, A. (2013). Transistor bipolaire basse fréquence pour application spatiale et de défense soumis à une double agression onde électromagnétique : - dose Ionisante : Bipolar Transistor for Low Frequency Space Application and Defense subject to a double aggression Electromagnetic wave - Total Ionizing Dose. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2012MON20058

Chicago Manual of Style (16th Edition):

Doridant, Adrien. “Transistor bipolaire basse fréquence pour application spatiale et de défense soumis à une double agression onde électromagnétique : - dose Ionisante : Bipolar Transistor for Low Frequency Space Application and Defense subject to a double aggression Electromagnetic wave - Total Ionizing Dose.” 2013. Doctoral Dissertation, Université Montpellier II. Accessed April 24, 2019. http://www.theses.fr/2012MON20058.

MLA Handbook (7th Edition):

Doridant, Adrien. “Transistor bipolaire basse fréquence pour application spatiale et de défense soumis à une double agression onde électromagnétique : - dose Ionisante : Bipolar Transistor for Low Frequency Space Application and Defense subject to a double aggression Electromagnetic wave - Total Ionizing Dose.” 2013. Web. 24 Apr 2019.

Vancouver:

Doridant A. Transistor bipolaire basse fréquence pour application spatiale et de défense soumis à une double agression onde électromagnétique : - dose Ionisante : Bipolar Transistor for Low Frequency Space Application and Defense subject to a double aggression Electromagnetic wave - Total Ionizing Dose. [Internet] [Doctoral dissertation]. Université Montpellier II; 2013. [cited 2019 Apr 24]. Available from: http://www.theses.fr/2012MON20058.

Council of Science Editors:

Doridant A. Transistor bipolaire basse fréquence pour application spatiale et de défense soumis à une double agression onde électromagnétique : - dose Ionisante : Bipolar Transistor for Low Frequency Space Application and Defense subject to a double aggression Electromagnetic wave - Total Ionizing Dose. [Doctoral Dissertation]. Université Montpellier II; 2013. Available from: http://www.theses.fr/2012MON20058


Vanderbilt University

14. Liang, Chundong. Radiation effects and low frequency noise in black phosphorus transistors.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 Black phosphorus (BP) is a promising two-dimensional (2D) semiconductor material for future CMOS technology. Its tunable band gap from 0.3 eV in bulk samples to… (more)

Subjects/Keywords: black phosphorus transistors; radiation effects; low frequency noise; reliability; single event effect; total ionizing dose effect

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APA (6th Edition):

Liang, C. (2018). Radiation effects and low frequency noise in black phosphorus transistors. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-02082018-135155/ ;

Chicago Manual of Style (16th Edition):

Liang, Chundong. “Radiation effects and low frequency noise in black phosphorus transistors.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed April 24, 2019. http://etd.library.vanderbilt.edu/available/etd-02082018-135155/ ;.

MLA Handbook (7th Edition):

Liang, Chundong. “Radiation effects and low frequency noise in black phosphorus transistors.” 2018. Web. 24 Apr 2019.

Vancouver:

Liang C. Radiation effects and low frequency noise in black phosphorus transistors. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2019 Apr 24]. Available from: http://etd.library.vanderbilt.edu/available/etd-02082018-135155/ ;.

Council of Science Editors:

Liang C. Radiation effects and low frequency noise in black phosphorus transistors. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-02082018-135155/ ;


Vanderbilt University

15. Ni, Kai. A fully embedded Silicon On Insulator Total Ionizing Dose monitor.

Degree: MS, Electrical Engineering, 2013, Vanderbilt University

Total ionizing dose (TID) effect is a kind of radiation effects. Itâs related with the charge build up in the insulator caused by the radiation.… (more)

Subjects/Keywords: silicon on insulator; buried oxide; threshold voltage shift; leakage current; current controlled oscillator; total ionizing dose

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APA (6th Edition):

Ni, K. (2013). A fully embedded Silicon On Insulator Total Ionizing Dose monitor. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07302013-093909/ ;

Chicago Manual of Style (16th Edition):

Ni, Kai. “A fully embedded Silicon On Insulator Total Ionizing Dose monitor.” 2013. Masters Thesis, Vanderbilt University. Accessed April 24, 2019. http://etd.library.vanderbilt.edu/available/etd-07302013-093909/ ;.

MLA Handbook (7th Edition):

Ni, Kai. “A fully embedded Silicon On Insulator Total Ionizing Dose monitor.” 2013. Web. 24 Apr 2019.

Vancouver:

Ni K. A fully embedded Silicon On Insulator Total Ionizing Dose monitor. [Internet] [Masters thesis]. Vanderbilt University; 2013. [cited 2019 Apr 24]. Available from: http://etd.library.vanderbilt.edu/available/etd-07302013-093909/ ;.

Council of Science Editors:

Ni K. A fully embedded Silicon On Insulator Total Ionizing Dose monitor. [Masters Thesis]. Vanderbilt University; 2013. Available from: http://etd.library.vanderbilt.edu/available/etd-07302013-093909/ ;


Universidade do Rio Grande do Sul

16. Balen, Tiago Roberto. Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção.

Degree: 2010, Universidade do Rio Grande do Sul

 Este trabalho estuda os efeitos da radiação em dispositivos analógicos programáveis (FPAAs, do inglês, Field Programmable Analog Arrays) e técnicas de proteção que podem ser… (more)

Subjects/Keywords: Single event upset (SEU); Circuitos eletrônicos; Total ionizing dose (TID) Field programmable analog arrays (FPAAs); Efeitos da radiação; Radiation effects; Circuitos analógicos; Radiação : Proteção; Self-checking; Radiation hardening techniques

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APA (6th Edition):

Balen, T. R. (2010). Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/27254

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Balen, Tiago Roberto. “Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção.” 2010. Thesis, Universidade do Rio Grande do Sul. Accessed April 24, 2019. http://hdl.handle.net/10183/27254.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Balen, Tiago Roberto. “Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção.” 2010. Web. 24 Apr 2019.

Vancouver:

Balen TR. Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2010. [cited 2019 Apr 24]. Available from: http://hdl.handle.net/10183/27254.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Balen TR. Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção. [Thesis]. Universidade do Rio Grande do Sul; 2010. Available from: http://hdl.handle.net/10183/27254

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

17. El Mamouni, Farah. New insights into the total dose response of fully-depleted planar and FinFET SOI transistors.

Degree: MS, Electrical Engineering, 2009, Vanderbilt University

 In this thesis, we examine the total dose response of planar fully depleted planar SOI MOSFETs fabricated in a FinFET technology as functions of both… (more)

Subjects/Keywords: Band-to-Band Tunneling (BBT); Fully-Depleted Silicon-on-Insulator (FDSOI); Gate induced Drain Leakage Current (GIDL); Total Ionizing Dose (TID); FinFETs; MOSFETs

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APA (6th Edition):

El Mamouni, F. (2009). New insights into the total dose response of fully-depleted planar and FinFET SOI transistors. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu//available/etd-03302009-101809/ ;

Chicago Manual of Style (16th Edition):

El Mamouni, Farah. “New insights into the total dose response of fully-depleted planar and FinFET SOI transistors.” 2009. Masters Thesis, Vanderbilt University. Accessed April 24, 2019. http://etd.library.vanderbilt.edu//available/etd-03302009-101809/ ;.

MLA Handbook (7th Edition):

El Mamouni, Farah. “New insights into the total dose response of fully-depleted planar and FinFET SOI transistors.” 2009. Web. 24 Apr 2019.

Vancouver:

El Mamouni F. New insights into the total dose response of fully-depleted planar and FinFET SOI transistors. [Internet] [Masters thesis]. Vanderbilt University; 2009. [cited 2019 Apr 24]. Available from: http://etd.library.vanderbilt.edu//available/etd-03302009-101809/ ;.

Council of Science Editors:

El Mamouni F. New insights into the total dose response of fully-depleted planar and FinFET SOI transistors. [Masters Thesis]. Vanderbilt University; 2009. Available from: http://etd.library.vanderbilt.edu//available/etd-03302009-101809/ ;


Universidade do Rio Grande do Sul

18. Tambara, Lucas Antunes. Caracterização de circuitos programáveis e sistemas em chip sob radiação.

Degree: 2013, Universidade do Rio Grande do Sul

Este trabalho consiste em um estudo acerca dos efeitos da radiação em circuitos programáveis e sistemas em chip, do inglês System-on-Chip (SoC), baseados em FPGAs… (more)

Subjects/Keywords: Efeitos da radiação; System-on-chips (SoCs); Field-programmable gate arrays (FPGAs); Tolerância a falhas; Tolerância à radiação; Fault tolerance; Radiation tolerance; SoC; Total ionizing dose (TID); Circuitos integrados; Single event effects (SEEs)

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APA (6th Edition):

Tambara, L. A. (2013). Caracterização de circuitos programáveis e sistemas em chip sob radiação. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/86477

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tambara, Lucas Antunes. “Caracterização de circuitos programáveis e sistemas em chip sob radiação.” 2013. Thesis, Universidade do Rio Grande do Sul. Accessed April 24, 2019. http://hdl.handle.net/10183/86477.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tambara, Lucas Antunes. “Caracterização de circuitos programáveis e sistemas em chip sob radiação.” 2013. Web. 24 Apr 2019.

Vancouver:

Tambara LA. Caracterização de circuitos programáveis e sistemas em chip sob radiação. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2013. [cited 2019 Apr 24]. Available from: http://hdl.handle.net/10183/86477.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tambara LA. Caracterização de circuitos programáveis e sistemas em chip sob radiação. [Thesis]. Universidade do Rio Grande do Sul; 2013. Available from: http://hdl.handle.net/10183/86477

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

19. Rowsey, Nicole L. Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers.

Degree: PhD, Electrical and Computer Engineering, 2012, University of Florida

 The electrical breakdown of oxides and oxide/semiconductor interfaces is one of the main reasons for device failure in integrated circuits, especially devices under high-stress conditions.… (more)

Subjects/Keywords: Continuity equations; Dosage; Electrons; Hydrogen; Irradiation; Oxides; Oxygen; Protons; Silicon; Simulations; charge  – defect  – dose  – eldrs  – enhanced  – fixed  – floods  – flooxs  – glpnp  – interface  – ionizing  – low  – mediated  – nit  – not  – oxide  – rate  – sensitivity  – simulation  – tcad  – tid  – total  – transport  – traps

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APA (6th Edition):

Rowsey, N. L. (2012). Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0044042

Chicago Manual of Style (16th Edition):

Rowsey, Nicole L. “Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers.” 2012. Doctoral Dissertation, University of Florida. Accessed April 24, 2019. http://ufdc.ufl.edu/UFE0044042.

MLA Handbook (7th Edition):

Rowsey, Nicole L. “Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers.” 2012. Web. 24 Apr 2019.

Vancouver:

Rowsey NL. Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers. [Internet] [Doctoral dissertation]. University of Florida; 2012. [cited 2019 Apr 24]. Available from: http://ufdc.ufl.edu/UFE0044042.

Council of Science Editors:

Rowsey NL. Quantitative Modeling of Total Ionizing Dose Reliability Effects in Device SiO2 Layers. [Doctoral Dissertation]. University of Florida; 2012. Available from: http://ufdc.ufl.edu/UFE0044042

20. Diggins, Zachary John. System Health Awareness in Total-Ionizing Dose Environments.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 There is increasing interest in using commercial-off-the-shelf (COTS) electronics in radiation environments, such as robotic systems for remediation after the nuclear accident at Fukushima or… (more)

Subjects/Keywords: bayesian network; commercial-off-the-shelf; robotics; total-ionizing dose; radiation hardness assurance; radiation effects

…status of Line Tracking and Total Ionizing Dose distributions… …most influenced by Total Ionizing Dose, which is the logical outcome for this system topology… …studies for multiple robotic systems. The report identifies total ionizing dose (TID)… …𝑃(𝐵) (1) Bayesian statistics have been applied to total-ionizing… …effects of total ionizing dose (TID) on semiconductor devices exist [9]… 

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APA (6th Edition):

Diggins, Z. J. (2016). System Health Awareness in Total-Ionizing Dose Environments. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11212016-025249/ ;

Chicago Manual of Style (16th Edition):

Diggins, Zachary John. “System Health Awareness in Total-Ionizing Dose Environments.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed April 24, 2019. http://etd.library.vanderbilt.edu/available/etd-11212016-025249/ ;.

MLA Handbook (7th Edition):

Diggins, Zachary John. “System Health Awareness in Total-Ionizing Dose Environments.” 2016. Web. 24 Apr 2019.

Vancouver:

Diggins ZJ. System Health Awareness in Total-Ionizing Dose Environments. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2019 Apr 24]. Available from: http://etd.library.vanderbilt.edu/available/etd-11212016-025249/ ;.

Council of Science Editors:

Diggins ZJ. System Health Awareness in Total-Ionizing Dose Environments. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://etd.library.vanderbilt.edu/available/etd-11212016-025249/ ;

21. Zhang, Xuan (Cher). Reliability and irradiation effects of 4H-SiC MOS devices.

Degree: PhD, Electrical Engineering, 2013, Vanderbilt University

 Bias-temperature-instabilities (BTIs) and total ionizing dose effects are investigated for 4H-SiC MOS devices. Low frequency noise measurements are employed to help understand the nature of… (more)

Subjects/Keywords: bias temperature instabilities; SiC MOS devices; 1/f noise; total ionizing dose effects

…consistent with total ionizing dose effects on Si/SiO2 devices, with radiationinduced-hole trapping… …reliability stresses are needed to qualify SiC devices for use in relatively high total-ionizing… …59 43. Drain current ID as a function of gate voltage VG at varying total dose and… …60 44. ΔNot as a function of total dose for a SiC nMOSFET device with W/L = 400 µm/400 µm… …4H-SiC MOSFETs For MOS devices, the oxide is the most sensitive part for ionizing radiation… 

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APA (6th Edition):

Zhang, X. (. (2013). Reliability and irradiation effects of 4H-SiC MOS devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04152013-101211/ ;

Chicago Manual of Style (16th Edition):

Zhang, Xuan (Cher). “Reliability and irradiation effects of 4H-SiC MOS devices.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed April 24, 2019. http://etd.library.vanderbilt.edu/available/etd-04152013-101211/ ;.

MLA Handbook (7th Edition):

Zhang, Xuan (Cher). “Reliability and irradiation effects of 4H-SiC MOS devices.” 2013. Web. 24 Apr 2019.

Vancouver:

Zhang X(. Reliability and irradiation effects of 4H-SiC MOS devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2019 Apr 24]. Available from: http://etd.library.vanderbilt.edu/available/etd-04152013-101211/ ;.

Council of Science Editors:

Zhang X(. Reliability and irradiation effects of 4H-SiC MOS devices. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://etd.library.vanderbilt.edu/available/etd-04152013-101211/ ;

22. Walldén, Johan. Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques.

Degree: The Institute of Technology, 2014, Linköping UniversityLinköping University

  The aim with this thesis has been to make a survey of radiation hardened electronics, explaining why and how radiation affects electronics and what… (more)

Subjects/Keywords: Radiation; Radiation Hardening By Design; RHBD; Displacement Damage; DDD; Total Ionizing

…5 2.2 Total Ionizing Dose… …3.1.1 3.1.2 Total ionizing dose… …19 3.2.3 3.3 Total Ionizing Dose… …22 3.3.3 3.4 Total ionizing dose… …25 xi 3.4.1 Total ionizing dose… 

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APA (6th Edition):

Walldén, J. (2014). Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques. (Thesis). Linköping UniversityLinköping University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109343

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Walldén, Johan. “Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques.” 2014. Thesis, Linköping UniversityLinköping University. Accessed April 24, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109343.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Walldén, Johan. “Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques.” 2014. Web. 24 Apr 2019.

Vancouver:

Walldén J. Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques. [Internet] [Thesis]. Linköping UniversityLinköping University; 2014. [cited 2019 Apr 24]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109343.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Walldén J. Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques. [Thesis]. Linköping UniversityLinköping University; 2014. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109343

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

23. Park, Hyunwoo. Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation.

Degree: PhD, Electrical and Computer Engineering, 2011, University of Florida

 Uniaxial strained-silicon (Si) has emerged as a leading technique for enhancing transistor performance for sub-100 nm logic technology for use in commercial and consumer electronics.… (more)

Subjects/Keywords: Compressive stress; Diodes; Electric current; Electrons; Lasers; Mechanical stress; Simulations; Stress functions; Tensile stress; Threshold voltage; dielectrics  – effects  – events  – high-k  – radiation  – single  – strained-si  – stress  – total-ionizing-dose  – transients  – uniaxial

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APA (6th Edition):

Park, H. (2011). Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0043566

Chicago Manual of Style (16th Edition):

Park, Hyunwoo. “Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation.” 2011. Doctoral Dissertation, University of Florida. Accessed April 24, 2019. http://ufdc.ufl.edu/UFE0043566.

MLA Handbook (7th Edition):

Park, Hyunwoo. “Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation.” 2011. Web. 24 Apr 2019.

Vancouver:

Park H. Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation. [Internet] [Doctoral dissertation]. University of Florida; 2011. [cited 2019 Apr 24]. Available from: http://ufdc.ufl.edu/UFE0043566.

Council of Science Editors:

Park H. Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation. [Doctoral Dissertation]. University of Florida; 2011. Available from: http://ufdc.ufl.edu/UFE0043566


Université Montpellier II

24. Roche, Nicolas J-H. Caractérisation et modélisation de l'influence des effets cumulés de l'environnement spatial sur le niveau de vulnérabilité de systèmes spatiaux soumis aux effets transitoires naturels ou issus d'une explosion nucléaire. : Study and modeling of the induced effects by natural space environment on the space systems vulnerability level exposed to natural transient effects or nuclear detonation, Flash-X.

Degree: Docteur es, Génie électrique, électronique, photonique et systèmes, 2010, Université Montpellier II

L'environnement radiatif spatial est composé d'une grande diversité de particules dans un spectre en énergie très large. Parmi les effets affectant les composants électroniques, on… (more)

Subjects/Keywords: Circuits intégrés bipolaires analogiques; Dose ionisante; Tests laser pulsé; Réponse transitoire; Modélisation de circuits intégrés analogiques; Effets des radiations sur l'électronique; Bipolar Analog Integrated Circuits; Total Ionizing Dose; Pulsed-Laser Testing; Transient Response; IntegraModélisation de circuits intéModélisation de circuits intégrés analogiquesgrés analogiquested Circuits Modeling; Trations sur l'électroniqueansients Radiations Effects on Electronics

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APA (6th Edition):

Roche, N. J. (2010). Caractérisation et modélisation de l'influence des effets cumulés de l'environnement spatial sur le niveau de vulnérabilité de systèmes spatiaux soumis aux effets transitoires naturels ou issus d'une explosion nucléaire. : Study and modeling of the induced effects by natural space environment on the space systems vulnerability level exposed to natural transient effects or nuclear detonation, Flash-X. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2010MON20108

Chicago Manual of Style (16th Edition):

Roche, Nicolas J-H. “Caractérisation et modélisation de l'influence des effets cumulés de l'environnement spatial sur le niveau de vulnérabilité de systèmes spatiaux soumis aux effets transitoires naturels ou issus d'une explosion nucléaire. : Study and modeling of the induced effects by natural space environment on the space systems vulnerability level exposed to natural transient effects or nuclear detonation, Flash-X.” 2010. Doctoral Dissertation, Université Montpellier II. Accessed April 24, 2019. http://www.theses.fr/2010MON20108.

MLA Handbook (7th Edition):

Roche, Nicolas J-H. “Caractérisation et modélisation de l'influence des effets cumulés de l'environnement spatial sur le niveau de vulnérabilité de systèmes spatiaux soumis aux effets transitoires naturels ou issus d'une explosion nucléaire. : Study and modeling of the induced effects by natural space environment on the space systems vulnerability level exposed to natural transient effects or nuclear detonation, Flash-X.” 2010. Web. 24 Apr 2019.

Vancouver:

Roche NJ. Caractérisation et modélisation de l'influence des effets cumulés de l'environnement spatial sur le niveau de vulnérabilité de systèmes spatiaux soumis aux effets transitoires naturels ou issus d'une explosion nucléaire. : Study and modeling of the induced effects by natural space environment on the space systems vulnerability level exposed to natural transient effects or nuclear detonation, Flash-X. [Internet] [Doctoral dissertation]. Université Montpellier II; 2010. [cited 2019 Apr 24]. Available from: http://www.theses.fr/2010MON20108.

Council of Science Editors:

Roche NJ. Caractérisation et modélisation de l'influence des effets cumulés de l'environnement spatial sur le niveau de vulnérabilité de systèmes spatiaux soumis aux effets transitoires naturels ou issus d'une explosion nucléaire. : Study and modeling of the induced effects by natural space environment on the space systems vulnerability level exposed to natural transient effects or nuclear detonation, Flash-X. [Doctoral Dissertation]. Université Montpellier II; 2010. Available from: http://www.theses.fr/2010MON20108

25. Ni, Kai. Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 With CMOS scaling continuing to sub-10 nm node, Si is approaching its physical limits. To enable further scaling, alternative channel materials with superior transport properties… (more)

Subjects/Keywords: charge collection; TCAD; parasitic bipolar transistor; pulsed laser; heavy ion; III-V MOSFET; single event transient; total ionizing dose

…6 1.2.1. Total Ionizing Dose Effects Introduction… …7 1.3. 1.3.1. Total Ionizing Dose Effects in III-V FETs: An Overview… …76 Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum… …1.2.1. Total Ionizing Dose Effects Introduction Total ionizing dose (TID) effects… …materials and devices are reviewed. 1.3.1. Total Ionizing Dose Effects in III-V FETs: An Overview… 

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APA (6th Edition):

Ni, K. (2016). Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-09122016-145557/ ;

Chicago Manual of Style (16th Edition):

Ni, Kai. “Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed April 24, 2019. http://etd.library.vanderbilt.edu/available/etd-09122016-145557/ ;.

MLA Handbook (7th Edition):

Ni, Kai. “Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS.” 2016. Web. 24 Apr 2019.

Vancouver:

Ni K. Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2019 Apr 24]. Available from: http://etd.library.vanderbilt.edu/available/etd-09122016-145557/ ;.

Council of Science Editors:

Ni K. Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://etd.library.vanderbilt.edu/available/etd-09122016-145557/ ;

26. Rezzak, Nadia. Total ionizing dose effects in advanced CMOS technologies.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

 Key aspects of the total-ionizing dose (TID) response of advanced complementary metalâoxideâsemiconductor (CMOS) technologies are examined. As technology scales down, stress can strongly affect radiation-induced… (more)

Subjects/Keywords: Fully depleted SOI; Partially depleted SOI; Variability; total ionizing dose (TID); sidewall doping; shallow trench isolation (STI); MOSFET off-state leakage current; mechanical stress; Active space distance

…x28;CMOS) technology has scaled, the device aspect dominating the total-ionizing dose… …technologies require accurate evaluation of the variability of total-ionizing dose (TID)… …1.4. Potential variability in the total dose hardness of two identically processed lots… …The change in polish time also affects the variability of the total dose response for… …the HDP oxide. The total STI oxide is composed of liner oxide and HDP oxide. Assuming a… 

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APA (6th Edition):

Rezzak, N. (2012). Total ionizing dose effects in advanced CMOS technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12212012-123125/ ;

Chicago Manual of Style (16th Edition):

Rezzak, Nadia. “Total ionizing dose effects in advanced CMOS technologies.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed April 24, 2019. http://etd.library.vanderbilt.edu/available/etd-12212012-123125/ ;.

MLA Handbook (7th Edition):

Rezzak, Nadia. “Total ionizing dose effects in advanced CMOS technologies.” 2012. Web. 24 Apr 2019.

Vancouver:

Rezzak N. Total ionizing dose effects in advanced CMOS technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2019 Apr 24]. Available from: http://etd.library.vanderbilt.edu/available/etd-12212012-123125/ ;.

Council of Science Editors:

Rezzak N. Total ionizing dose effects in advanced CMOS technologies. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-12212012-123125/ ;

27. Inanlou, Farzad Michael-David. Innovative transceiver approaches for low-power near-field and far-field applications.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 Wireless operation, near-field or far-field, is a core functionality of any mobile or autonomous system. These systems are battery operated or most often utilize energy… (more)

Subjects/Keywords: Wireless; Transceiver; Radar; Low-power; Wide-band; Millimeter-wave; System on chip; Remote sensing; Phased-array; Implantable Medical Devices; Near-field; Communications; Space-based transceivers; SiGe; BiCMOS; CMOS; Integrated circuits; RF; Radiation effects; Total ionizing dose; High-altitude; Transcutaneous telemetry; Data telemetry; low-voltage; Low noise Amplifier; X-band; K-band; Ku-band; W-band; Impulse radio; Ultra wideband; Inductive link

…generator and investigated total ionizing dose effects aimed at low-power space-based/high… …Gaussian pulse generator and investigated total ionizing dose effects aimed at low-power space… …Investigation of Total Ionizing Dose Damage on a Pulse Generator Intended for Space-Based Impulse… …22 Fig. 15. (a) tpw as a function of Ibias for different total-doses. (b… …x29; Vp as a function of Ibias for different total-doses. (c) tpw as a function of… 

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APA (6th Edition):

Inanlou, F. M. (2014). Innovative transceiver approaches for low-power near-field and far-field applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/52245

Chicago Manual of Style (16th Edition):

Inanlou, Farzad Michael-David. “Innovative transceiver approaches for low-power near-field and far-field applications.” 2014. Doctoral Dissertation, Georgia Tech. Accessed April 24, 2019. http://hdl.handle.net/1853/52245.

MLA Handbook (7th Edition):

Inanlou, Farzad Michael-David. “Innovative transceiver approaches for low-power near-field and far-field applications.” 2014. Web. 24 Apr 2019.

Vancouver:

Inanlou FM. Innovative transceiver approaches for low-power near-field and far-field applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Apr 24]. Available from: http://hdl.handle.net/1853/52245.

Council of Science Editors:

Inanlou FM. Innovative transceiver approaches for low-power near-field and far-field applications. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/52245

28. Lourenco, Nelson Estacio. An assessment of silicon-germanium BiCMOS technologies for extreme environment applications.

Degree: MS, Electrical and Computer Engineering, 2012, Georgia Tech

 This thesis evaluates the suitability of silicon-germanium technology for electronic systems intended for extreme environments, such as ambient temperatures outside of military specification (-55 degC… (more)

Subjects/Keywords: Silicon-germanium; Extreme environments; Heterojunction bipolar transistor; Space environments; Total ionizing dose; Radiation tolerant; Single event effects; Semiconductors; Electronics Materials; Germanium Effect of radiation on; Silicon alloys Effect of radiation on; Metal oxide semiconductors, Complementary; Silicon alloys Effect of temperature on

…major physical processes underlying total ionizing dose (TID) degradation (… …reviewed. The concepts of total ionizing dose (TID) and single event effects (SEE… …the total ionizing dose (TID) radiation response. The deep trench isolation helps… …nucl) Effects TID >105 cm-2 s-1 DDD SEE Total Ionizing Dose (TID). While… …27 Fractional hole yield vs. electric field for various types of ionizing radiation (… 

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APA (6th Edition):

Lourenco, N. E. (2012). An assessment of silicon-germanium BiCMOS technologies for extreme environment applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/45959

Chicago Manual of Style (16th Edition):

Lourenco, Nelson Estacio. “An assessment of silicon-germanium BiCMOS technologies for extreme environment applications.” 2012. Masters Thesis, Georgia Tech. Accessed April 24, 2019. http://hdl.handle.net/1853/45959.

MLA Handbook (7th Edition):

Lourenco, Nelson Estacio. “An assessment of silicon-germanium BiCMOS technologies for extreme environment applications.” 2012. Web. 24 Apr 2019.

Vancouver:

Lourenco NE. An assessment of silicon-germanium BiCMOS technologies for extreme environment applications. [Internet] [Masters thesis]. Georgia Tech; 2012. [cited 2019 Apr 24]. Available from: http://hdl.handle.net/1853/45959.

Council of Science Editors:

Lourenco NE. An assessment of silicon-germanium BiCMOS technologies for extreme environment applications. [Masters Thesis]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/45959

29. Cardoso, Adilson Silva. Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 State-of-the-art SiGe BiCMOS technologies leverage the maturity of deep-submicron silicon CMOS processing with bandgap-engineered SiGe HBTs in a single platform that is suitable for a… (more)

Subjects/Keywords: SiGe; RF switches; BiCMOS; FET-based; SOI; PIN diode; BiCMOS circuits; Radiation hardening by design; Transient response; Transient radiation effects; Extreme environments; Mixed-signal circuits; Silicon-germanium; Single-pole single-throw(SPST); Single-pole four-throw(SP4T); Single-pole double-throw(SPDT); Voltage references; Cryogenic temperatures; Large-signal linearity; Non-linearities; SiGe heterojunction bipolar transistors (HBTs); Small-signal linearity; Large-signal linearity; Radiation; Single event transient (SET); Total ionizing dose (TID); Radiation; Precision voltage reference; Bandgap reference (BGR); Bulk FET

…improve with cooling [5, 6]. • The impact of total ionizing dose (TID) on… …total ionizing dose (TID) response of metal-oxidesemiconductor field-effect… …first-order BGR irradiated at room temperature as a function of total accumulated dose for… …116 Figure 75 Voltage reference circuits comparison plotted as functions of total dose and… …118 Figure 76 Measured PIN diode transfer characteristics as a function of total accumulated… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Cardoso, A. S. (2014). Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53099

Chicago Manual of Style (16th Edition):

Cardoso, Adilson Silva. “Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications.” 2014. Doctoral Dissertation, Georgia Tech. Accessed April 24, 2019. http://hdl.handle.net/1853/53099.

MLA Handbook (7th Edition):

Cardoso, Adilson Silva. “Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications.” 2014. Web. 24 Apr 2019.

Vancouver:

Cardoso AS. Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Apr 24]. Available from: http://hdl.handle.net/1853/53099.

Council of Science Editors:

Cardoso AS. Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/53099

.