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You searched for subject:(Switching Characterization). Showing records 1 – 6 of 6 total matches.

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1. Nguyen, Clément. Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2 : Electrical characterization and modeling of the resistive switching dynamics HfO2-based OxRAM memories.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Grenoble Alpes

Les mémoires résistives à base d’oxyde OxRAM sont une technologie de mémoire non-volatile dite émergente, au même titre que les mémoires à changement de phase… (more)

Subjects/Keywords: Oxram; ReRAM; Mémoires non volatiles; Commutation; Modélisation; Caractérisation; Oxram; ReRAM; Non volatile memories; Switching; Modeling; Characterization; 620

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Nguyen, C. (2018). Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2 : Electrical characterization and modeling of the resistive switching dynamics HfO2-based OxRAM memories. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAT035

Chicago Manual of Style (16th Edition):

Nguyen, Clément. “Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2 : Electrical characterization and modeling of the resistive switching dynamics HfO2-based OxRAM memories.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed January 23, 2019. http://www.theses.fr/2018GREAT035.

MLA Handbook (7th Edition):

Nguyen, Clément. “Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2 : Electrical characterization and modeling of the resistive switching dynamics HfO2-based OxRAM memories.” 2018. Web. 23 Jan 2019.

Vancouver:

Nguyen C. Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2 : Electrical characterization and modeling of the resistive switching dynamics HfO2-based OxRAM memories. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2019 Jan 23]. Available from: http://www.theses.fr/2018GREAT035.

Council of Science Editors:

Nguyen C. Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2 : Electrical characterization and modeling of the resistive switching dynamics HfO2-based OxRAM memories. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAT035


University of Oulu

2. Lanz, B. (Brigitte). Compact current pulse-pumped GaAs–AlGaAs laser diode structures for generating high peak-power (1–50 watt) picosecond-range single optical pulses.

Degree: 2016, University of Oulu

Abstract Although gain-switching is a simple, well-established technique for obtaining ultrashort optical pulses generated with laser diodes, the optical energy in a pulse achievable from… (more)

Subjects/Keywords: gain-switching; high peak-power single optical pulse; laser pulse characterization; passive Q-switching; picosecond phenomena; pulsed laser; pulsed time-of-flight; saturable absorber; semiconductor laser; trailing oscillations; gain-switching; jälkioskillaatiot; laserdiodin karakterisointi; passiivinen Q-kytkentä; pikosekunti-ilmiöt; pulssin kulkuaika; pulssitettu laser; puolijohdelaser; saturoiva absorbaattori

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lanz, B. (. (2016). Compact current pulse-pumped GaAs–AlGaAs laser diode structures for generating high peak-power (1–50 watt) picosecond-range single optical pulses. (Doctoral Dissertation). University of Oulu. Retrieved from http://urn.fi/urn:isbn:9789526213569

Chicago Manual of Style (16th Edition):

Lanz, B (Brigitte). “Compact current pulse-pumped GaAs–AlGaAs laser diode structures for generating high peak-power (1–50 watt) picosecond-range single optical pulses.” 2016. Doctoral Dissertation, University of Oulu. Accessed January 23, 2019. http://urn.fi/urn:isbn:9789526213569.

MLA Handbook (7th Edition):

Lanz, B (Brigitte). “Compact current pulse-pumped GaAs–AlGaAs laser diode structures for generating high peak-power (1–50 watt) picosecond-range single optical pulses.” 2016. Web. 23 Jan 2019.

Vancouver:

Lanz B(. Compact current pulse-pumped GaAs–AlGaAs laser diode structures for generating high peak-power (1–50 watt) picosecond-range single optical pulses. [Internet] [Doctoral dissertation]. University of Oulu; 2016. [cited 2019 Jan 23]. Available from: http://urn.fi/urn:isbn:9789526213569.

Council of Science Editors:

Lanz B(. Compact current pulse-pumped GaAs–AlGaAs laser diode structures for generating high peak-power (1–50 watt) picosecond-range single optical pulses. [Doctoral Dissertation]. University of Oulu; 2016. Available from: http://urn.fi/urn:isbn:9789526213569


University of Canterbury

3. Sattar, Abdul. Electrical Characterization of Cluster Devices.

Degree: Physics and Astronomy, 2011, University of Canterbury

 The aim of the study presented in this thesis is to explore the electrical and physical properties of films of tin and lead clusters. Understanding… (more)

Subjects/Keywords: Nanotechnology; Clusters; electronic transport in nanomaterials; Coalescence; Switching; electromigration; electric field induced evaporation; Nanoscale materials and structures: fabrication and characterization; percolating films; memristors; quantized conductance; conductance quantization

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APA (6th Edition):

Sattar, A. (2011). Electrical Characterization of Cluster Devices. (Thesis). University of Canterbury. Retrieved from http://hdl.handle.net/10092/6677

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sattar, Abdul. “Electrical Characterization of Cluster Devices.” 2011. Thesis, University of Canterbury. Accessed January 23, 2019. http://hdl.handle.net/10092/6677.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sattar, Abdul. “Electrical Characterization of Cluster Devices.” 2011. Web. 23 Jan 2019.

Vancouver:

Sattar A. Electrical Characterization of Cluster Devices. [Internet] [Thesis]. University of Canterbury; 2011. [cited 2019 Jan 23]. Available from: http://hdl.handle.net/10092/6677.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sattar A. Electrical Characterization of Cluster Devices. [Thesis]. University of Canterbury; 2011. Available from: http://hdl.handle.net/10092/6677

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Virginia Tech

4. Chen, Zheng. Electrical Integration of SiC Power Devices for High-Power-Density Applications.

Degree: PhD, Electrical and Computer Engineering, 2013, Virginia Tech

 The trend of electrification in transportation applications has led to the fast development of high-power-density power electronics converters. High-switching-frequency and high-temperature operations are the two… (more)

Subjects/Keywords: High power density; high temperature; high frequency; silicon carbide; device characterization; gate oxide stability; stray inductance; wire-bond packaging; hybrid packaging; switching loop snubber

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, Z. (2013). Electrical Integration of SiC Power Devices for High-Power-Density Applications. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/23923

Chicago Manual of Style (16th Edition):

Chen, Zheng. “Electrical Integration of SiC Power Devices for High-Power-Density Applications.” 2013. Doctoral Dissertation, Virginia Tech. Accessed January 23, 2019. http://hdl.handle.net/10919/23923.

MLA Handbook (7th Edition):

Chen, Zheng. “Electrical Integration of SiC Power Devices for High-Power-Density Applications.” 2013. Web. 23 Jan 2019.

Vancouver:

Chen Z. Electrical Integration of SiC Power Devices for High-Power-Density Applications. [Internet] [Doctoral dissertation]. Virginia Tech; 2013. [cited 2019 Jan 23]. Available from: http://hdl.handle.net/10919/23923.

Council of Science Editors:

Chen Z. Electrical Integration of SiC Power Devices for High-Power-Density Applications. [Doctoral Dissertation]. Virginia Tech; 2013. Available from: http://hdl.handle.net/10919/23923


Virginia Tech

5. Chen, Zheng. Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices.

Degree: Electrical and Computer Engineering, 2009, Virginia Tech

 To support the study of potential utilization of the emerging silicon carbide (SiC) devices, two SiC active switches, namely 1.2 kV, 5 A SiC JFET… (more)

Subjects/Keywords: SiC MOSFET; SiC JFET; High switching speed; Parasitic impedances; Parametric study; Modeling; Characterization

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, Z. (2009). Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices. (Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/30778

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Zheng. “Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices.” 2009. Thesis, Virginia Tech. Accessed January 23, 2019. http://hdl.handle.net/10919/30778.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Zheng. “Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices.” 2009. Web. 23 Jan 2019.

Vancouver:

Chen Z. Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices. [Internet] [Thesis]. Virginia Tech; 2009. [cited 2019 Jan 23]. Available from: http://hdl.handle.net/10919/30778.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Z. Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices. [Thesis]. Virginia Tech; 2009. Available from: http://hdl.handle.net/10919/30778

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

6. Zhang, Zheyu. Characterization and Realization of High Switching-speed Capability of SiC Power Devices in Voltage Source Converter.

Degree: 2015, University of Tennessee – Knoxville

 The emerging wide band-gap, silicon carbide (SiC) power devices greatly improve the switching performance due to their inherent fast switching capability. However, the high switching-speed… (more)

Subjects/Keywords: SiC; Switching Characterization; Intelligent Gate Driver; Optimal Interconnection; Power and Energy

…17 2.1 2.2 2.3 2.4 3 1.2.1 Switching Performance Characterization of Power Devices… …43 Methodology for Switching Performance Characterization of SiC Devices… …1 1.2 Impact of Switching Performance of Devices on Voltage Source Converter… …23 Impact Factors of Switching Performance in Voltage Source Converter… …35 Approaches for Switching Performance Improvement of Power Devices ................. 37… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zhang, Z. (2015). Characterization and Realization of High Switching-speed Capability of SiC Power Devices in Voltage Source Converter. (Doctoral Dissertation). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_graddiss/3524

Chicago Manual of Style (16th Edition):

Zhang, Zheyu. “Characterization and Realization of High Switching-speed Capability of SiC Power Devices in Voltage Source Converter.” 2015. Doctoral Dissertation, University of Tennessee – Knoxville. Accessed January 23, 2019. https://trace.tennessee.edu/utk_graddiss/3524.

MLA Handbook (7th Edition):

Zhang, Zheyu. “Characterization and Realization of High Switching-speed Capability of SiC Power Devices in Voltage Source Converter.” 2015. Web. 23 Jan 2019.

Vancouver:

Zhang Z. Characterization and Realization of High Switching-speed Capability of SiC Power Devices in Voltage Source Converter. [Internet] [Doctoral dissertation]. University of Tennessee – Knoxville; 2015. [cited 2019 Jan 23]. Available from: https://trace.tennessee.edu/utk_graddiss/3524.

Council of Science Editors:

Zhang Z. Characterization and Realization of High Switching-speed Capability of SiC Power Devices in Voltage Source Converter. [Doctoral Dissertation]. University of Tennessee – Knoxville; 2015. Available from: https://trace.tennessee.edu/utk_graddiss/3524

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