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You searched for subject:(Sulfur passivation). Showing records 1 – 6 of 6 total matches.

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McMaster University

1. Tajik, Nooshin. Sulfur Passivation of III-V Semiconductor Nanowires.

Degree: PhD, 2013, McMaster University

An ammonium polysulfide (NH4)2Sx solution was optimized through a series of experiments to be used for surface passivation of III-V nanowires . The effectiveness… (more)

Subjects/Keywords: Nanowire; Passivation; III-V semiconductor; Sulfur; Photoluminescence; Solar Cell; Engineering Physics; Engineering Physics

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APA (6th Edition):

Tajik, N. (2013). Sulfur Passivation of III-V Semiconductor Nanowires. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/12834

Chicago Manual of Style (16th Edition):

Tajik, Nooshin. “Sulfur Passivation of III-V Semiconductor Nanowires.” 2013. Doctoral Dissertation, McMaster University. Accessed October 18, 2019. http://hdl.handle.net/11375/12834.

MLA Handbook (7th Edition):

Tajik, Nooshin. “Sulfur Passivation of III-V Semiconductor Nanowires.” 2013. Web. 18 Oct 2019.

Vancouver:

Tajik N. Sulfur Passivation of III-V Semiconductor Nanowires. [Internet] [Doctoral dissertation]. McMaster University; 2013. [cited 2019 Oct 18]. Available from: http://hdl.handle.net/11375/12834.

Council of Science Editors:

Tajik N. Sulfur Passivation of III-V Semiconductor Nanowires. [Doctoral Dissertation]. McMaster University; 2013. Available from: http://hdl.handle.net/11375/12834


Universidade do Rio Grande do Sul

2. Rolim, Guilherme Koszeniewski. Efeito do eletrodo de platina e da passivação com enxofre na formação de filmes dielétricos sobre germânio.

Degree: 2014, Universidade do Rio Grande do Sul

As estruturas metal-óxido-semicondutor (MOS) são o coração dos transistores de efeito de campo. O estudo e caracterização físico-química desses dispositivos foram a chave para o… (more)

Subjects/Keywords: Ge; Transistores; Filmes finos dieletricos; Sulfur passivation; Mosfet; Physico-chemical characterization; Pt electrode; Oxidação; Passivacao; Tratamento térmico; Germânio; Platina; Silicio

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APA (6th Edition):

Rolim, G. K. (2014). Efeito do eletrodo de platina e da passivação com enxofre na formação de filmes dielétricos sobre germânio. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/98337

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rolim, Guilherme Koszeniewski. “Efeito do eletrodo de platina e da passivação com enxofre na formação de filmes dielétricos sobre germânio.” 2014. Thesis, Universidade do Rio Grande do Sul. Accessed October 18, 2019. http://hdl.handle.net/10183/98337.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rolim, Guilherme Koszeniewski. “Efeito do eletrodo de platina e da passivação com enxofre na formação de filmes dielétricos sobre germânio.” 2014. Web. 18 Oct 2019.

Vancouver:

Rolim GK. Efeito do eletrodo de platina e da passivação com enxofre na formação de filmes dielétricos sobre germânio. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2014. [cited 2019 Oct 18]. Available from: http://hdl.handle.net/10183/98337.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rolim GK. Efeito do eletrodo de platina e da passivação com enxofre na formação de filmes dielétricos sobre germânio. [Thesis]. Universidade do Rio Grande do Sul; 2014. Available from: http://hdl.handle.net/10183/98337

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

3. LEI DIAN. ADVANCED GERMANIUM-TIN P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS.

Degree: 2017, National University of Singapore

Subjects/Keywords: GeSn; Sulfur passivation; MOSFETs; GeSnOI; FinFET; Wafer bonding

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APA (6th Edition):

DIAN, L. (2017). ADVANCED GERMANIUM-TIN P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/138652

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

DIAN, LEI. “ADVANCED GERMANIUM-TIN P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS.” 2017. Thesis, National University of Singapore. Accessed October 18, 2019. http://scholarbank.nus.edu.sg/handle/10635/138652.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

DIAN, LEI. “ADVANCED GERMANIUM-TIN P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS.” 2017. Web. 18 Oct 2019.

Vancouver:

DIAN L. ADVANCED GERMANIUM-TIN P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS. [Internet] [Thesis]. National University of Singapore; 2017. [cited 2019 Oct 18]. Available from: http://scholarbank.nus.edu.sg/handle/10635/138652.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

DIAN L. ADVANCED GERMANIUM-TIN P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS. [Thesis]. National University of Singapore; 2017. Available from: http://scholarbank.nus.edu.sg/handle/10635/138652

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of South Carolina

4. Hayes, Timothy C. Growth, Characterization, and Surface Modification of Gallium Telluride For Radiation Detection.

Degree: MS, Electrical Engineering, 2012, University of South Carolina

  Two growth methods are investigated for producing detector-grade large volume layered chalcogenide gallium telluride (GaTe) single crystals. Growth method one utilizes a graphite crucible… (more)

Subjects/Keywords: Electrical and Computer Engineering; Electrical and Electronics; Engineering; Detection Spectra; Gallium Telluride; Gamma Ray; Planar Detector; Sulfur Passivation; Vertical Bridgman

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APA (6th Edition):

Hayes, T. C. (2012). Growth, Characterization, and Surface Modification of Gallium Telluride For Radiation Detection. (Masters Thesis). University of South Carolina. Retrieved from https://scholarcommons.sc.edu/etd/2178

Chicago Manual of Style (16th Edition):

Hayes, Timothy C. “Growth, Characterization, and Surface Modification of Gallium Telluride For Radiation Detection.” 2012. Masters Thesis, University of South Carolina. Accessed October 18, 2019. https://scholarcommons.sc.edu/etd/2178.

MLA Handbook (7th Edition):

Hayes, Timothy C. “Growth, Characterization, and Surface Modification of Gallium Telluride For Radiation Detection.” 2012. Web. 18 Oct 2019.

Vancouver:

Hayes TC. Growth, Characterization, and Surface Modification of Gallium Telluride For Radiation Detection. [Internet] [Masters thesis]. University of South Carolina; 2012. [cited 2019 Oct 18]. Available from: https://scholarcommons.sc.edu/etd/2178.

Council of Science Editors:

Hayes TC. Growth, Characterization, and Surface Modification of Gallium Telluride For Radiation Detection. [Masters Thesis]. University of South Carolina; 2012. Available from: https://scholarcommons.sc.edu/etd/2178

5. Saha, Arunodoy. Grain Boundary Passivation of Multicrystalline Silicon Using Hydrogen Sulfide as a Sulfur Source.

Degree: Electrical Engineering, 2014, Arizona State University

Subjects/Keywords: Engineering; Electrical engineering; Bulk Passivation; Bulk treatment; Grain Boundary Passivation; Sulfur passivation

Passivation For a number of years, use of sulfur as a surface passivation of crystalline silicon… …x5B;38-41]. Sulfur passivation using a solution as a sulfur source like ammonium… …passivation. They reported a reliable and stable surface passivation from sulfur using chemical… …Lifetime Gain as a Function of Temperature for Passivation By H2................ 43 4.5 Lifetime… …Gain vs. Post-Annealing Temperature after H2S Passivation............ 45 4.6 Lifetime Gain vs… 

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APA (6th Edition):

Saha, A. (2014). Grain Boundary Passivation of Multicrystalline Silicon Using Hydrogen Sulfide as a Sulfur Source. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/27513

Chicago Manual of Style (16th Edition):

Saha, Arunodoy. “Grain Boundary Passivation of Multicrystalline Silicon Using Hydrogen Sulfide as a Sulfur Source.” 2014. Masters Thesis, Arizona State University. Accessed October 18, 2019. http://repository.asu.edu/items/27513.

MLA Handbook (7th Edition):

Saha, Arunodoy. “Grain Boundary Passivation of Multicrystalline Silicon Using Hydrogen Sulfide as a Sulfur Source.” 2014. Web. 18 Oct 2019.

Vancouver:

Saha A. Grain Boundary Passivation of Multicrystalline Silicon Using Hydrogen Sulfide as a Sulfur Source. [Internet] [Masters thesis]. Arizona State University; 2014. [cited 2019 Oct 18]. Available from: http://repository.asu.edu/items/27513.

Council of Science Editors:

Saha A. Grain Boundary Passivation of Multicrystalline Silicon Using Hydrogen Sulfide as a Sulfur Source. [Masters Thesis]. Arizona State University; 2014. Available from: http://repository.asu.edu/items/27513


University of New South Wales

6. Carrad, Damon. Role of surfaces and dopants in quantum devices and nanowire transistors.

Degree: Physics, 2015, University of New South Wales

 Miniaturisation of electronic devices has driven development of high speed, high density processors and memory elements. This process has required extensive optimisation of semiconductor materials… (more)

Subjects/Keywords: III-V semiconductors; Surfaces and interfaces; Dopants; nanowires; Sulfur passivation; Magnetoconductance fluctuations; GaAs/AlGaAs heterostructures; Quantum dots; Thermoelectrics; Nanoelectronics; Biological interfacing; Organic materials; Polymer electrolytes; Wrap-gate transistors

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APA (6th Edition):

Carrad, D. (2015). Role of surfaces and dopants in quantum devices and nanowire transistors. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/55335 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37201/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Carrad, Damon. “Role of surfaces and dopants in quantum devices and nanowire transistors.” 2015. Doctoral Dissertation, University of New South Wales. Accessed October 18, 2019. http://handle.unsw.edu.au/1959.4/55335 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37201/SOURCE02?view=true.

MLA Handbook (7th Edition):

Carrad, Damon. “Role of surfaces and dopants in quantum devices and nanowire transistors.” 2015. Web. 18 Oct 2019.

Vancouver:

Carrad D. Role of surfaces and dopants in quantum devices and nanowire transistors. [Internet] [Doctoral dissertation]. University of New South Wales; 2015. [cited 2019 Oct 18]. Available from: http://handle.unsw.edu.au/1959.4/55335 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37201/SOURCE02?view=true.

Council of Science Editors:

Carrad D. Role of surfaces and dopants in quantum devices and nanowire transistors. [Doctoral Dissertation]. University of New South Wales; 2015. Available from: http://handle.unsw.edu.au/1959.4/55335 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37201/SOURCE02?view=true

.