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You searched for subject:(Single electron electronics). Showing records 1 – 14 of 14 total matches.

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University of Notre Dame

1. Michael S. McConnell. Effect of Platinum Oxidation and Reduction on Single Electron Transistors Fabricated by Atomic Layer Deposition</h1>.

Degree: MSin Electrical Engineering, Electrical Engineering, 2016, University of Notre Dame

  This work describes the fabrication of single electron transistors using electron beam lithography and atomic layer deposition to form nanoscale tunnel transparent junctions of… (more)

Subjects/Keywords: single electronics; single electron transistor; atomic layer deposition

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APA (6th Edition):

McConnell, M. S. (2016). Effect of Platinum Oxidation and Reduction on Single Electron Transistors Fabricated by Atomic Layer Deposition</h1>. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/vx021c2104k

Chicago Manual of Style (16th Edition):

McConnell, Michael S.. “Effect of Platinum Oxidation and Reduction on Single Electron Transistors Fabricated by Atomic Layer Deposition</h1>.” 2016. Masters Thesis, University of Notre Dame. Accessed December 15, 2019. https://curate.nd.edu/show/vx021c2104k.

MLA Handbook (7th Edition):

McConnell, Michael S.. “Effect of Platinum Oxidation and Reduction on Single Electron Transistors Fabricated by Atomic Layer Deposition</h1>.” 2016. Web. 15 Dec 2019.

Vancouver:

McConnell MS. Effect of Platinum Oxidation and Reduction on Single Electron Transistors Fabricated by Atomic Layer Deposition</h1>. [Internet] [Masters thesis]. University of Notre Dame; 2016. [cited 2019 Dec 15]. Available from: https://curate.nd.edu/show/vx021c2104k.

Council of Science Editors:

McConnell MS. Effect of Platinum Oxidation and Reduction on Single Electron Transistors Fabricated by Atomic Layer Deposition</h1>. [Masters Thesis]. University of Notre Dame; 2016. Available from: https://curate.nd.edu/show/vx021c2104k


Penn State University

2. Saripalli, Vinay. DEVICE AND ARCHITECTURE CO-DESIGN FOR ULTRA-LOW POWER LOGIC USING EMERGING TUNNELING-BASED DEVICES.

Degree: PhD, Computer Science and Engineering, 2011, Penn State University

 The scaling of silicon CMOS, by delivering lower switching-energy transistors with each technology generation, has been the driving force behind total circuit-energy reduction during the… (more)

Subjects/Keywords: Tunnel FET; Single Electron Transistor; Low Power Electronics; Heterogeneous Architecture; Variation-Aware SRAM

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APA (6th Edition):

Saripalli, V. (2011). DEVICE AND ARCHITECTURE CO-DESIGN FOR ULTRA-LOW POWER LOGIC USING EMERGING TUNNELING-BASED DEVICES. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/12574

Chicago Manual of Style (16th Edition):

Saripalli, Vinay. “DEVICE AND ARCHITECTURE CO-DESIGN FOR ULTRA-LOW POWER LOGIC USING EMERGING TUNNELING-BASED DEVICES.” 2011. Doctoral Dissertation, Penn State University. Accessed December 15, 2019. https://etda.libraries.psu.edu/catalog/12574.

MLA Handbook (7th Edition):

Saripalli, Vinay. “DEVICE AND ARCHITECTURE CO-DESIGN FOR ULTRA-LOW POWER LOGIC USING EMERGING TUNNELING-BASED DEVICES.” 2011. Web. 15 Dec 2019.

Vancouver:

Saripalli V. DEVICE AND ARCHITECTURE CO-DESIGN FOR ULTRA-LOW POWER LOGIC USING EMERGING TUNNELING-BASED DEVICES. [Internet] [Doctoral dissertation]. Penn State University; 2011. [cited 2019 Dec 15]. Available from: https://etda.libraries.psu.edu/catalog/12574.

Council of Science Editors:

Saripalli V. DEVICE AND ARCHITECTURE CO-DESIGN FOR ULTRA-LOW POWER LOGIC USING EMERGING TUNNELING-BASED DEVICES. [Doctoral Dissertation]. Penn State University; 2011. Available from: https://etda.libraries.psu.edu/catalog/12574


Indian Institute of Science

3. Dan, Surya Shankar. Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits.

Degree: 2009, Indian Institute of Science

 Although scalingof CMOS technology has been predicted to continue for another decade, novel technological solutions are required to overcome the fundamental limitations of the decananometer… (more)

Subjects/Keywords: Transistor Devices (Electronics); Energy Quantization; Inverter Logic; Single Electron Transistor (SET); Monte Carlo Simulation; Orthodox Theory; Compact Modeling; Single Electron Tunneling; Noise Margin; SET Circuits; Single Electron Inverter Performance; Coulomb Blockade; Negative Differential Resistance; Electronic Engineering

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APA (6th Edition):

Dan, S. S. (2009). Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/666

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dan, Surya Shankar. “Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits.” 2009. Thesis, Indian Institute of Science. Accessed December 15, 2019. http://hdl.handle.net/2005/666.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dan, Surya Shankar. “Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits.” 2009. Web. 15 Dec 2019.

Vancouver:

Dan SS. Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits. [Internet] [Thesis]. Indian Institute of Science; 2009. [cited 2019 Dec 15]. Available from: http://hdl.handle.net/2005/666.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dan SS. Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits. [Thesis]. Indian Institute of Science; 2009. Available from: http://hdl.handle.net/2005/666

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

4. Bautze, Tobias. Towards quantum optics experiments with single flying electrons in a solid state system : L'expériences d'optique quantique avec un unique électron volant dans la matière condensée.

Degree: Docteur es, Nanophysique, 2014, Université de Grenoble

Ce travail de thèse porte sur l’étude fondamentale de systèmes nano-électroniques,mesurés à très basse température. Nous avons réalisé des interféromètres électroniques àdeux chemins à partir… (more)

Subjects/Keywords: Boite quantique; Saw electrons; Optique quantique; Nano-electronics; Quantum dot; Single electron; Surface acoustic wave (SAW); Beam splitter; Flying qubit; Electrostatic potential; Single electron source; Kwant; Python; Design optimization; Tight-binding model; 530

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APA (6th Edition):

Bautze, T. (2014). Towards quantum optics experiments with single flying electrons in a solid state system : L'expériences d'optique quantique avec un unique électron volant dans la matière condensée. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2014GRENY059

Chicago Manual of Style (16th Edition):

Bautze, Tobias. “Towards quantum optics experiments with single flying electrons in a solid state system : L'expériences d'optique quantique avec un unique électron volant dans la matière condensée.” 2014. Doctoral Dissertation, Université de Grenoble. Accessed December 15, 2019. http://www.theses.fr/2014GRENY059.

MLA Handbook (7th Edition):

Bautze, Tobias. “Towards quantum optics experiments with single flying electrons in a solid state system : L'expériences d'optique quantique avec un unique électron volant dans la matière condensée.” 2014. Web. 15 Dec 2019.

Vancouver:

Bautze T. Towards quantum optics experiments with single flying electrons in a solid state system : L'expériences d'optique quantique avec un unique électron volant dans la matière condensée. [Internet] [Doctoral dissertation]. Université de Grenoble; 2014. [cited 2019 Dec 15]. Available from: http://www.theses.fr/2014GRENY059.

Council of Science Editors:

Bautze T. Towards quantum optics experiments with single flying electrons in a solid state system : L'expériences d'optique quantique avec un unique électron volant dans la matière condensée. [Doctoral Dissertation]. Université de Grenoble; 2014. Available from: http://www.theses.fr/2014GRENY059


Georgia Tech

5. Gonzalez, Jose Ignacio. Quantum Optoelectronics: Nanoscale Transport in a New Light.

Degree: PhD, Chemistry and Biochemistry, 2006, Georgia Tech

 Common to molecular electronics studies, nanoscale break junctions created through electromigration also naturally produce electroluminescent arrays of individual gold nanoclusters spanning the electrodes. Due to… (more)

Subjects/Keywords: Inelastic electron tunneling; Single molecule; Electroluminescence; Molecular electronics; Nanoscale charge transport; Dynamics

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APA (6th Edition):

Gonzalez, J. I. (2006). Quantum Optoelectronics: Nanoscale Transport in a New Light. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/10521

Chicago Manual of Style (16th Edition):

Gonzalez, Jose Ignacio. “Quantum Optoelectronics: Nanoscale Transport in a New Light.” 2006. Doctoral Dissertation, Georgia Tech. Accessed December 15, 2019. http://hdl.handle.net/1853/10521.

MLA Handbook (7th Edition):

Gonzalez, Jose Ignacio. “Quantum Optoelectronics: Nanoscale Transport in a New Light.” 2006. Web. 15 Dec 2019.

Vancouver:

Gonzalez JI. Quantum Optoelectronics: Nanoscale Transport in a New Light. [Internet] [Doctoral dissertation]. Georgia Tech; 2006. [cited 2019 Dec 15]. Available from: http://hdl.handle.net/1853/10521.

Council of Science Editors:

Gonzalez JI. Quantum Optoelectronics: Nanoscale Transport in a New Light. [Doctoral Dissertation]. Georgia Tech; 2006. Available from: http://hdl.handle.net/1853/10521


Miami University

6. Rajagopal, Senthil Arun. SINGLE MOLECULE ELECTRONICS AND NANOFABRICATION OF MOLECULAR ELECTRONIC DEVICES.

Degree: MS, Physics, 2006, Miami University

 Molecular electronics is an emerging field that makes it possible to build electronic devices with single molecules as their active element. The conductivity of single(more)

Subjects/Keywords: Physics, Molecular; SINGLE MOLECULE ELECTRONICS; ORGANOMETALLIC; ELECTRON BEAM LITHOGRAPHY; ELECTRODEPOSITION; ELECTROMIGRATION

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APA (6th Edition):

Rajagopal, S. A. (2006). SINGLE MOLECULE ELECTRONICS AND NANOFABRICATION OF MOLECULAR ELECTRONIC DEVICES. (Masters Thesis). Miami University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=miami1155330219

Chicago Manual of Style (16th Edition):

Rajagopal, Senthil Arun. “SINGLE MOLECULE ELECTRONICS AND NANOFABRICATION OF MOLECULAR ELECTRONIC DEVICES.” 2006. Masters Thesis, Miami University. Accessed December 15, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=miami1155330219.

MLA Handbook (7th Edition):

Rajagopal, Senthil Arun. “SINGLE MOLECULE ELECTRONICS AND NANOFABRICATION OF MOLECULAR ELECTRONIC DEVICES.” 2006. Web. 15 Dec 2019.

Vancouver:

Rajagopal SA. SINGLE MOLECULE ELECTRONICS AND NANOFABRICATION OF MOLECULAR ELECTRONIC DEVICES. [Internet] [Masters thesis]. Miami University; 2006. [cited 2019 Dec 15]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=miami1155330219.

Council of Science Editors:

Rajagopal SA. SINGLE MOLECULE ELECTRONICS AND NANOFABRICATION OF MOLECULAR ELECTRONIC DEVICES. [Masters Thesis]. Miami University; 2006. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=miami1155330219


Cornell University

7. Pasupathy, Abhay N. Electron Transport in Molecular Transistors .

Degree: 2004, Cornell University

 In this thesis I will describe the conductance properties of certain organic molecules. I will first show that two metal electrodes can be fabricated with… (more)

Subjects/Keywords: Molecular electronics; Coulomb blockade; quantum tunnelling; Kondo effect; single-electron transistor; quantum dot

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APA (6th Edition):

Pasupathy, A. N. (2004). Electron Transport in Molecular Transistors . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pasupathy, Abhay N. “Electron Transport in Molecular Transistors .” 2004. Thesis, Cornell University. Accessed December 15, 2019. http://hdl.handle.net/1813/158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pasupathy, Abhay N. “Electron Transport in Molecular Transistors .” 2004. Web. 15 Dec 2019.

Vancouver:

Pasupathy AN. Electron Transport in Molecular Transistors . [Internet] [Thesis]. Cornell University; 2004. [cited 2019 Dec 15]. Available from: http://hdl.handle.net/1813/158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pasupathy AN. Electron Transport in Molecular Transistors . [Thesis]. Cornell University; 2004. Available from: http://hdl.handle.net/1813/158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

8. Roussely, Grégoire. Mesures résolues en temps dans un conducteur mésoscopique : Time resolved measurements in a mesoscopic conductor.

Degree: Docteur es, Physique de la matière condensée et du rayonnement, 2016, Grenoble Alpes

Au cours de la dernière décennie, un important effort a été fait dans le domaine des conducteurs électroniques de basse dimensionnalité afin de réaliser une… (more)

Subjects/Keywords: Nano-Électronique quantique; Mesures résolues en temps; Electronique à électron unique; Système électronique balistique; Cohérence quantique; Hautes fréquences; Quantum nano-Electronic; Time resolved measurements; Single electron electronics; Ballistic electron system; Quantum coherence; High frequencies; 530

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APA (6th Edition):

Roussely, G. (2016). Mesures résolues en temps dans un conducteur mésoscopique : Time resolved measurements in a mesoscopic conductor. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2016GREAY013

Chicago Manual of Style (16th Edition):

Roussely, Grégoire. “Mesures résolues en temps dans un conducteur mésoscopique : Time resolved measurements in a mesoscopic conductor.” 2016. Doctoral Dissertation, Grenoble Alpes. Accessed December 15, 2019. http://www.theses.fr/2016GREAY013.

MLA Handbook (7th Edition):

Roussely, Grégoire. “Mesures résolues en temps dans un conducteur mésoscopique : Time resolved measurements in a mesoscopic conductor.” 2016. Web. 15 Dec 2019.

Vancouver:

Roussely G. Mesures résolues en temps dans un conducteur mésoscopique : Time resolved measurements in a mesoscopic conductor. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2016. [cited 2019 Dec 15]. Available from: http://www.theses.fr/2016GREAY013.

Council of Science Editors:

Roussely G. Mesures résolues en temps dans un conducteur mésoscopique : Time resolved measurements in a mesoscopic conductor. [Doctoral Dissertation]. Grenoble Alpes; 2016. Available from: http://www.theses.fr/2016GREAY013

9. Jouvet, Nicolas. Intégration hybride de transistors à un électron sur un noeud technologique CMOS : Hybrid integration of single electron transistor on a CMOS technology node.

Degree: Docteur es, Electronique, 2012, INSA Lyon

Cette étude porte sur l’intégration hybride de transistors à un électron (single-electron transistor, SET) dans un noeud technologique CMOS. Les SETs présentent de forts potentiels,… (more)

Subjects/Keywords: Electronique; Circuit intégré Complementary Metal Oxide SemiConductor - CMOS; Transistor MOSFET - Composant à effet de champ à grille isolée; Composant à un électron; Transistor à un électron - SET; Nanotechnologie; Nanodamascène; Caractérisation électrique; Electronics; MOSFET - Metal Oxide SemiConductor Field Effect - Transistor; Single Electron Device; Single-electron Transistor - SET; Nanotechnology; Nanodamascene; Electrical characterisation; 621.381 520 72

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APA (6th Edition):

Jouvet, N. (2012). Intégration hybride de transistors à un électron sur un noeud technologique CMOS : Hybrid integration of single electron transistor on a CMOS technology node. (Doctoral Dissertation). INSA Lyon. Retrieved from http://www.theses.fr/2012ISAL0114

Chicago Manual of Style (16th Edition):

Jouvet, Nicolas. “Intégration hybride de transistors à un électron sur un noeud technologique CMOS : Hybrid integration of single electron transistor on a CMOS technology node.” 2012. Doctoral Dissertation, INSA Lyon. Accessed December 15, 2019. http://www.theses.fr/2012ISAL0114.

MLA Handbook (7th Edition):

Jouvet, Nicolas. “Intégration hybride de transistors à un électron sur un noeud technologique CMOS : Hybrid integration of single electron transistor on a CMOS technology node.” 2012. Web. 15 Dec 2019.

Vancouver:

Jouvet N. Intégration hybride de transistors à un électron sur un noeud technologique CMOS : Hybrid integration of single electron transistor on a CMOS technology node. [Internet] [Doctoral dissertation]. INSA Lyon; 2012. [cited 2019 Dec 15]. Available from: http://www.theses.fr/2012ISAL0114.

Council of Science Editors:

Jouvet N. Intégration hybride de transistors à un électron sur un noeud technologique CMOS : Hybrid integration of single electron transistor on a CMOS technology node. [Doctoral Dissertation]. INSA Lyon; 2012. Available from: http://www.theses.fr/2012ISAL0114

10. Bounouar, Mohamed Amine. Transistors mono-electroniques double-grille : Modélisation, conception and évaluation d’architectures logiques : Double-gate single electron transistors : Modeling, design et évaluation of logic architectures.

Degree: Docteur es, Electronique, 2013, INSA Lyon

Dans les années à venir, l’industrie de la microélectronique doit développer de nouvelles filières technologiques qui pourront devenir des successeurs ou des compléments de la… (more)

Subjects/Keywords: Electronique; Microélectronique; Transistor mono-électroniques - SET; Transistor mono-électroniques double-grille - DG-SET; Modélisation compacte du SET; Conception de circuits logiques; Nano-architecture; Ultra-basse consommation; Conception de cricuits numériques; Electronics; Microelectronics; Single-electron Transistor - SET; Double-Gate Single Electron Transistor - DG-SET; SET Modeling; Logic circuit Design; Nano-architectures; Ultra-low power consumption; 621.381 520 72

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APA (6th Edition):

Bounouar, M. A. (2013). Transistors mono-electroniques double-grille : Modélisation, conception and évaluation d’architectures logiques : Double-gate single electron transistors : Modeling, design et évaluation of logic architectures. (Doctoral Dissertation). INSA Lyon. Retrieved from http://www.theses.fr/2013ISAL0068

Chicago Manual of Style (16th Edition):

Bounouar, Mohamed Amine. “Transistors mono-electroniques double-grille : Modélisation, conception and évaluation d’architectures logiques : Double-gate single electron transistors : Modeling, design et évaluation of logic architectures.” 2013. Doctoral Dissertation, INSA Lyon. Accessed December 15, 2019. http://www.theses.fr/2013ISAL0068.

MLA Handbook (7th Edition):

Bounouar, Mohamed Amine. “Transistors mono-electroniques double-grille : Modélisation, conception and évaluation d’architectures logiques : Double-gate single electron transistors : Modeling, design et évaluation of logic architectures.” 2013. Web. 15 Dec 2019.

Vancouver:

Bounouar MA. Transistors mono-electroniques double-grille : Modélisation, conception and évaluation d’architectures logiques : Double-gate single electron transistors : Modeling, design et évaluation of logic architectures. [Internet] [Doctoral dissertation]. INSA Lyon; 2013. [cited 2019 Dec 15]. Available from: http://www.theses.fr/2013ISAL0068.

Council of Science Editors:

Bounouar MA. Transistors mono-electroniques double-grille : Modélisation, conception and évaluation d’architectures logiques : Double-gate single electron transistors : Modeling, design et évaluation of logic architectures. [Doctoral Dissertation]. INSA Lyon; 2013. Available from: http://www.theses.fr/2013ISAL0068

11. Hajjam, Khalil El. Ingénierie de jonctions tunnel pour améliorer les performances du transistor mono-électronique métallique : Tunnel barrier engineering to enhance the performances of the metallic single electron transistor.

Degree: Docteur es, Électronique, Électrotechnique, Automatique, 2015, INSA Lyon

Aujourd’hui plusieurs obstacles technologiques et limitations physiques s’opposent à la poursuite de la miniaturisation de la technologie CMOS : courants de fuite, effet de canal… (more)

Subjects/Keywords: Electronique; Transistor mono-Électroniques - SET; Dépôt par couches minces; Couches minces diélectriques high-K; Couches minces diélectriques low-K; Oxudation; Transistor à un électron; Composés de titane; Ingénierie de la jonction tunnel; Intégration BEOL; Electronics; Atomic layer deposition; High-K dielectric thin films; Low-K dielectric films; Double gate single electron transistors; Titanium compounds; Tunnel junction engineering; BEOL integration; 621.381 520 72

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APA (6th Edition):

Hajjam, K. E. (2015). Ingénierie de jonctions tunnel pour améliorer les performances du transistor mono-électronique métallique : Tunnel barrier engineering to enhance the performances of the metallic single electron transistor. (Doctoral Dissertation). INSA Lyon. Retrieved from http://www.theses.fr/2015ISAL0111

Chicago Manual of Style (16th Edition):

Hajjam, Khalil El. “Ingénierie de jonctions tunnel pour améliorer les performances du transistor mono-électronique métallique : Tunnel barrier engineering to enhance the performances of the metallic single electron transistor.” 2015. Doctoral Dissertation, INSA Lyon. Accessed December 15, 2019. http://www.theses.fr/2015ISAL0111.

MLA Handbook (7th Edition):

Hajjam, Khalil El. “Ingénierie de jonctions tunnel pour améliorer les performances du transistor mono-électronique métallique : Tunnel barrier engineering to enhance the performances of the metallic single electron transistor.” 2015. Web. 15 Dec 2019.

Vancouver:

Hajjam KE. Ingénierie de jonctions tunnel pour améliorer les performances du transistor mono-électronique métallique : Tunnel barrier engineering to enhance the performances of the metallic single electron transistor. [Internet] [Doctoral dissertation]. INSA Lyon; 2015. [cited 2019 Dec 15]. Available from: http://www.theses.fr/2015ISAL0111.

Council of Science Editors:

Hajjam KE. Ingénierie de jonctions tunnel pour améliorer les performances du transistor mono-électronique métallique : Tunnel barrier engineering to enhance the performances of the metallic single electron transistor. [Doctoral Dissertation]. INSA Lyon; 2015. Available from: http://www.theses.fr/2015ISAL0111

12. Ayadi, Yosri. 3D integration of single electron transistors in the back-end-of-line of 28 nm CMOS technology for the development of ultra-low power sensors : Intégration 3D de dispositifs SETs dans le Back-End-Of-Line en technologies CMOS 28 nm pour le développement de capteurs ultra basse consommation.

Degree: Docteur es, Electronique, électrotechnique, automatique, 2016, Lyon; Université de Sherbrooke (Québec, Canada)

Les systèmes mobiles intelligents sont déjà dotés de plusieurs composants de type capteur comme les accéléromètres, les thermomètres et les détecteurs infrarouge. Cependant, jusqu’à aujourd’hui… (more)

Subjects/Keywords: Electronique; Capteur; Transistor mono-Électroniques - SET; Intégration 3D monolithique; Capteur de gaz à base de FET; Capteur de gaz; Détection de dihydrogène; Ultra-Basse consommation; Texturation de surface de la couche sensible; Réseaux de MW-CNTs; Electronics; Sensors; SET - Single Electron Transistor; 3D monolithic integration; FET-Based gas sensor; Hydrogen detection; Sensing layer texturing; MW-CNT networks; 621.370 72

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APA (6th Edition):

Ayadi, Y. (2016). 3D integration of single electron transistors in the back-end-of-line of 28 nm CMOS technology for the development of ultra-low power sensors : Intégration 3D de dispositifs SETs dans le Back-End-Of-Line en technologies CMOS 28 nm pour le développement de capteurs ultra basse consommation. (Doctoral Dissertation). Lyon; Université de Sherbrooke (Québec, Canada). Retrieved from http://www.theses.fr/2016LYSEI155

Chicago Manual of Style (16th Edition):

Ayadi, Yosri. “3D integration of single electron transistors in the back-end-of-line of 28 nm CMOS technology for the development of ultra-low power sensors : Intégration 3D de dispositifs SETs dans le Back-End-Of-Line en technologies CMOS 28 nm pour le développement de capteurs ultra basse consommation.” 2016. Doctoral Dissertation, Lyon; Université de Sherbrooke (Québec, Canada). Accessed December 15, 2019. http://www.theses.fr/2016LYSEI155.

MLA Handbook (7th Edition):

Ayadi, Yosri. “3D integration of single electron transistors in the back-end-of-line of 28 nm CMOS technology for the development of ultra-low power sensors : Intégration 3D de dispositifs SETs dans le Back-End-Of-Line en technologies CMOS 28 nm pour le développement de capteurs ultra basse consommation.” 2016. Web. 15 Dec 2019.

Vancouver:

Ayadi Y. 3D integration of single electron transistors in the back-end-of-line of 28 nm CMOS technology for the development of ultra-low power sensors : Intégration 3D de dispositifs SETs dans le Back-End-Of-Line en technologies CMOS 28 nm pour le développement de capteurs ultra basse consommation. [Internet] [Doctoral dissertation]. Lyon; Université de Sherbrooke (Québec, Canada); 2016. [cited 2019 Dec 15]. Available from: http://www.theses.fr/2016LYSEI155.

Council of Science Editors:

Ayadi Y. 3D integration of single electron transistors in the back-end-of-line of 28 nm CMOS technology for the development of ultra-low power sensors : Intégration 3D de dispositifs SETs dans le Back-End-Of-Line en technologies CMOS 28 nm pour le développement de capteurs ultra basse consommation. [Doctoral Dissertation]. Lyon; Université de Sherbrooke (Québec, Canada); 2016. Available from: http://www.theses.fr/2016LYSEI155


University of New South Wales

13. Ruess, Frank Joachim. Atomically controlled device fabrication using STM.

Degree: Physics, 2006, University of New South Wales

 We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution… (more)

Subjects/Keywords: scanning tunneling microscopy; silicon; quantum devices; nanoelectronics; metal dots; weak localisation; strong localisation; phosphine; dephasing; electron transport; magnetotransport; planar device architecture; low temeperature measurements; Coulomb blockade; doping; STM; electron electron interactions; dimensioncal crossover; ultra high vacuum; hydrogen resist; lithography; STM lithography; molecular adsorption; electrical dopant activation; disordered electron systems; registration markers; electron phase coherence length; photon assisted carrier generation; tunnelling; delta doping; molecular beam epitaxy; STM device fabrication; quantum computer; single atom electronics; tunnel junctions; nanowires; quantum dots

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ruess, F. J. (2006). Atomically controlled device fabrication using STM. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/24855 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:991/SOURCE01?view=true

Chicago Manual of Style (16th Edition):

Ruess, Frank Joachim. “Atomically controlled device fabrication using STM.” 2006. Doctoral Dissertation, University of New South Wales. Accessed December 15, 2019. http://handle.unsw.edu.au/1959.4/24855 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:991/SOURCE01?view=true.

MLA Handbook (7th Edition):

Ruess, Frank Joachim. “Atomically controlled device fabrication using STM.” 2006. Web. 15 Dec 2019.

Vancouver:

Ruess FJ. Atomically controlled device fabrication using STM. [Internet] [Doctoral dissertation]. University of New South Wales; 2006. [cited 2019 Dec 15]. Available from: http://handle.unsw.edu.au/1959.4/24855 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:991/SOURCE01?view=true.

Council of Science Editors:

Ruess FJ. Atomically controlled device fabrication using STM. [Doctoral Dissertation]. University of New South Wales; 2006. Available from: http://handle.unsw.edu.au/1959.4/24855 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:991/SOURCE01?view=true


ETH Zürich

14. Scholze, Andreas. Simulation of single-electron devices.

Degree: 2000, ETH Zürich

Subjects/Keywords: EINZELELEKTRONENEFFEKTE (PHYSIK DER KONDENSIERTEN MATERIE); HALBLEITERBAUELEMENTE + ELEKTRONISCHE BAUELEMENTE (ELEKTRONIK); MODELLRECHNUNG/ELEKTROTECHNIK, ELEKTRONIK, NACHRICHTENTECHNIK, MIKROELEKTRONIK; SINGLE ELECTRON EFFECTS (CONDENSED MATTER PHYSICS); SEMICONDUCTOR COMPONENTS + ELECTRONIC COMPONENTS (ELECTRONICS); MATHEMATICAL MODELING IN ELECTRICAL ENGINEERING, ELECTRONICS, TELECOMMUNICATIONS, MICROELECTRONICS; info:eu-repo/classification/ddc/621.3; info:eu-repo/classification/ddc/530; Electric engineering; Physics

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Scholze, A. (2000). Simulation of single-electron devices. (Doctoral Dissertation). ETH Zürich. Retrieved from http://hdl.handle.net/20.500.11850/144512

Chicago Manual of Style (16th Edition):

Scholze, Andreas. “Simulation of single-electron devices.” 2000. Doctoral Dissertation, ETH Zürich. Accessed December 15, 2019. http://hdl.handle.net/20.500.11850/144512.

MLA Handbook (7th Edition):

Scholze, Andreas. “Simulation of single-electron devices.” 2000. Web. 15 Dec 2019.

Vancouver:

Scholze A. Simulation of single-electron devices. [Internet] [Doctoral dissertation]. ETH Zürich; 2000. [cited 2019 Dec 15]. Available from: http://hdl.handle.net/20.500.11850/144512.

Council of Science Editors:

Scholze A. Simulation of single-electron devices. [Doctoral Dissertation]. ETH Zürich; 2000. Available from: http://hdl.handle.net/20.500.11850/144512

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