subject:(Silicon)

University of Minnesota

1. Rastgar, Neema. Effects of water adsorption and surface oxidation on the electrical conductivity of silicon nanocrystal films.

Degree: 2012, University of Minnesota

URL: http://purl.umn.edu/160270

►

University of Minnesota M.S. December 2012. Major: Material Science and Engineering. Advisor: Eray Aydil. 1 computer file (PDF); iv, 27 pages, appendix p. 19-27.

Electrical… (more)

Subjects/Keywords: Silicon Nanocrystals

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APA (6^th Edition):

Rastgar, N. (2012). Effects of water adsorption and surface oxidation on the electrical conductivity of silicon nanocrystal films. (Masters Thesis). University of Minnesota. Retrieved from http://purl.umn.edu/160270

Chicago Manual of Style (16^th Edition):

Rastgar, Neema. “Effects of water adsorption and surface oxidation on the electrical conductivity of silicon nanocrystal films.” 2012. Masters Thesis, University of Minnesota. Accessed February 16, 2019. http://purl.umn.edu/160270.

MLA Handbook (7^th Edition):

Rastgar, Neema. “Effects of water adsorption and surface oxidation on the electrical conductivity of silicon nanocrystal films.” 2012. Web. 16 Feb 2019.

Vancouver:

Rastgar N. Effects of water adsorption and surface oxidation on the electrical conductivity of silicon nanocrystal films. [Internet] [Masters thesis]. University of Minnesota; 2012. [cited 2019 Feb 16]. Available from: http://purl.umn.edu/160270.

Council of Science Editors:

Rastgar N. Effects of water adsorption and surface oxidation on the electrical conductivity of silicon nanocrystal films. [Masters Thesis]. University of Minnesota; 2012. Available from: http://purl.umn.edu/160270

Université de Neuchâtel

2. Bailat, Julien. Growth, microstructure and electrical performances of thin film microcrystalline silicon solar cells.

Degree: 2005, Université de Neuchâtel

URL: http://doc.rero.ch/record/4910

► The goal of this thesis work is to improve the understanding of the growth of microcrystalline silicon solar cells and the relationships between their microstructure… (more)

▼ The goal of this thesis work is to improve the understanding of the growth of microcrystalline silicon solar cells and the relationships between their microstructure and their electrical performances. For that purpose, the work was divided into three different parts: - microstructure and growth of the microcrystalline layer and devices - growth simulations - electronic quality of the intrinsic layer (i-layer) and open-circuit voltage (Voc) Microstructure of µc-Si:H The microstructure was first fully characterized by TEM. The main questions were how the microstructure of the intrinsic layer (i-layer) is influenced by the deposition parameters and the nature of the substrate. It was shown that the substrate surface chemistry has a strong influence on the nucleation, whereas the surface roughness plays a minor role. The silane concentration (SC), one of the main deposition parameters, has a strong effect on the nucleation and crystallinity of the whole intrinsic layer. Growth simulations An innovative model for simulating the growth of microcrystalline and amorphous silicon was developed in order to understand in a better way the formation of the microstructure. It is based on two simple selection rules and three intuitive simulation parameters (i.e. critical size of nuclei, number of crystallographic orientations and desorption probability). This model is able to reproduce the main characteristics of the growth dynamics and microstructure of microcrystalline silicon: conical shape of the grains, thickness transition from amorphous to crystalline material, amorphous to crystalline transition with respect to deposition parameter (SC) and surface roughness evolution with respect to layer thickness. This simple model gives the keys to understanding the growth dynamics and microstructure of microcrystalline silicon layers. Electronic quality of i-layer and Voc The electronic quality of the i-layer was evaluated by the optical absorption of the defects of the i-layer as measured with the help of Fourier transform photocurrent spectroscopy (FTPS). Defects in the i-layer were artificially created by proton irradiation in order to demonstrate that FTPS is able to monitor the defect related absorption of the i-layer within complete thin film silicon solar cells In order to observe the influence of SC on the defect density, two series of cells deposited with different SC were fabricated. The FTPS measurements demonstrated that the defect related absorption of the i-layer decreases as SC is raised. Finally, variation of the defect density either by stepwise annealing of a sample irradiated by a proton beam or by variation of SC of i-layer was shown to influence the Voc significantly. From the above observations and conclusions one speculates that further tailoring of the structure of the solar cells could lead to a better open-circuit voltage for µc-Si:H solar cells. Advisors/Committee Members: Arvind (Dir.).

Subjects/Keywords: silicon

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APA (6^th Edition):

Bailat, J. (2005). Growth, microstructure and electrical performances of thin film microcrystalline silicon solar cells. (Thesis). Université de Neuchâtel. Retrieved from http://doc.rero.ch/record/4910

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Bailat, Julien. “Growth, microstructure and electrical performances of thin film microcrystalline silicon solar cells.” 2005. Thesis, Université de Neuchâtel. Accessed February 16, 2019. http://doc.rero.ch/record/4910.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Bailat, Julien. “Growth, microstructure and electrical performances of thin film microcrystalline silicon solar cells.” 2005. Web. 16 Feb 2019.

Vancouver:

Bailat J. Growth, microstructure and electrical performances of thin film microcrystalline silicon solar cells. [Internet] [Thesis]. Université de Neuchâtel; 2005. [cited 2019 Feb 16]. Available from: http://doc.rero.ch/record/4910.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bailat J. Growth, microstructure and electrical performances of thin film microcrystalline silicon solar cells. [Thesis]. Université de Neuchâtel; 2005. Available from: http://doc.rero.ch/record/4910

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Addis Ababa University

3. Sioma, Debela. RADIATIVE LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SMALL SCALE SILICON NANOSTRUCTURES .

Degree: 2012, Addis Ababa University

URL: http://etd.aau.edu.et/dspace/handle/123456789/1222

► Nanosilicon (nanocrystal and porous) research is gaining tremendous attention in recent years due to the light emitting properties of the material. Improving efficiencies in radiative… (more)

Subjects/Keywords: SILICON NANOSTRUCTURES

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APA (6^th Edition):

Sioma, D. (2012). RADIATIVE LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SMALL SCALE SILICON NANOSTRUCTURES . (Thesis). Addis Ababa University. Retrieved from http://etd.aau.edu.et/dspace/handle/123456789/1222

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Sioma, Debela. “RADIATIVE LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SMALL SCALE SILICON NANOSTRUCTURES .” 2012. Thesis, Addis Ababa University. Accessed February 16, 2019. http://etd.aau.edu.et/dspace/handle/123456789/1222.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Sioma, Debela. “RADIATIVE LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SMALL SCALE SILICON NANOSTRUCTURES .” 2012. Web. 16 Feb 2019.

Vancouver:

Sioma D. RADIATIVE LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SMALL SCALE SILICON NANOSTRUCTURES . [Internet] [Thesis]. Addis Ababa University; 2012. [cited 2019 Feb 16]. Available from: http://etd.aau.edu.et/dspace/handle/123456789/1222.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sioma D. RADIATIVE LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SMALL SCALE SILICON NANOSTRUCTURES . [Thesis]. Addis Ababa University; 2012. Available from: http://etd.aau.edu.et/dspace/handle/123456789/1222

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. 森田, 誠. 金属吸着Si表面に閉じ込められた二次元電子状態 : Two-dimensional electronic states confined in metal-adsorbed silicon surface; キンゾクキュウチャク Si ヒョウメンニトジコメラレタニジゲンデンシジョウタイ.

Degree: Nara Institute of Science and Technology / 奈良先端科学技術大学院大学

URL: http://hdl.handle.net/10061/6321

Subjects/Keywords: silicon

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APA (6^th Edition):

森田, �. (n.d.). 金属吸着Si表面に閉じ込められた二次元電子状態 : Two-dimensional electronic states confined in metal-adsorbed silicon surface; キンゾクキュウチャク Si ヒョウメンニトジコメラレタニジゲンデンシジョウタイ. (Thesis). Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Retrieved from http://hdl.handle.net/10061/6321

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

森田, 誠. “金属吸着Si表面に閉じ込められた二次元電子状態 : Two-dimensional electronic states confined in metal-adsorbed silicon surface; キンゾクキュウチャク Si ヒョウメンニトジコメラレタニジゲンデンシジョウタイ.” Thesis, Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Accessed February 16, 2019. http://hdl.handle.net/10061/6321.

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

森田, 誠. “金属吸着Si表面に閉じ込められた二次元電子状態 : Two-dimensional electronic states confined in metal-adsorbed silicon surface; キンゾクキュウチャク Si ヒョウメンニトジコメラレタニジゲンデンシジョウタイ.” Web. 16 Feb 2019.

Note: this citation may be lacking information needed for this citation format:
No year of publication.

Vancouver:

森田 �. 金属吸着Si表面に閉じ込められた二次元電子状態 : Two-dimensional electronic states confined in metal-adsorbed silicon surface; キンゾクキュウチャク Si ヒョウメンニトジコメラレタニジゲンデンシジョウタイ. [Internet] [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; [cited 2019 Feb 16]. Available from: http://hdl.handle.net/10061/6321.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

Council of Science Editors:

森田 �. 金属吸着Si表面に閉じ込められた二次元電子状態 : Two-dimensional electronic states confined in metal-adsorbed silicon surface; キンゾクキュウチャク Si ヒョウメンニトジコメラレタニジゲンデンシジョウタイ. [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; Available from: http://hdl.handle.net/10061/6321

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

Georgia Tech

5. Kenton, Arthur Craig. Electronic structure of local centers in silicon.

Degree: PhD, Physics, 1981, Georgia Tech

URL: http://hdl.handle.net/1853/30648

Subjects/Keywords: Silicon

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APA (6^th Edition):

Kenton, A. C. (1981). Electronic structure of local centers in silicon. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/30648

Chicago Manual of Style (16^th Edition):

Kenton, Arthur Craig. “Electronic structure of local centers in silicon.” 1981. Doctoral Dissertation, Georgia Tech. Accessed February 16, 2019. http://hdl.handle.net/1853/30648.

MLA Handbook (7^th Edition):

Kenton, Arthur Craig. “Electronic structure of local centers in silicon.” 1981. Web. 16 Feb 2019.

Vancouver:

Kenton AC. Electronic structure of local centers in silicon. [Internet] [Doctoral dissertation]. Georgia Tech; 1981. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/1853/30648.

Council of Science Editors:

Kenton AC. Electronic structure of local centers in silicon. [Doctoral Dissertation]. Georgia Tech; 1981. Available from: http://hdl.handle.net/1853/30648

Oregon State University

6. Mai, Chao Chen. Thermal growth and chemical etching of silicon dioxide film.

Degree: MS, Electrical Engineering, 1964, Oregon State University

URL: http://hdl.handle.net/1957/48584

► Some important factors that affect the dimensional control of oxide films on silicon were studied. Both N- and P-type silicon with resistivities in the range… (more)

Subjects/Keywords: Silicon

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APA (6^th Edition):

Mai, C. C. (1964). Thermal growth and chemical etching of silicon dioxide film. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/48584

Chicago Manual of Style (16^th Edition):

Mai, Chao Chen. “Thermal growth and chemical etching of silicon dioxide film.” 1964. Masters Thesis, Oregon State University. Accessed February 16, 2019. http://hdl.handle.net/1957/48584.

MLA Handbook (7^th Edition):

Mai, Chao Chen. “Thermal growth and chemical etching of silicon dioxide film.” 1964. Web. 16 Feb 2019.

Vancouver:

Mai CC. Thermal growth and chemical etching of silicon dioxide film. [Internet] [Masters thesis]. Oregon State University; 1964. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/1957/48584.

Council of Science Editors:

Mai CC. Thermal growth and chemical etching of silicon dioxide film. [Masters Thesis]. Oregon State University; 1964. Available from: http://hdl.handle.net/1957/48584

Oregon State University

7. Cheng, Dan Sang. The effect of etches on surface recombination in silicon.

Degree: MS, Electrical Engineering, 1962, Oregon State University

URL: http://hdl.handle.net/1957/49071

► This thesis presents a limited investigation of the effects of various etches on the surface properties of silicon. Surface recombination velocities of silicon under different… (more)

Subjects/Keywords: Silicon

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APA (6^th Edition):

Cheng, D. S. (1962). The effect of etches on surface recombination in silicon. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/49071

Chicago Manual of Style (16^th Edition):

Cheng, Dan Sang. “The effect of etches on surface recombination in silicon.” 1962. Masters Thesis, Oregon State University. Accessed February 16, 2019. http://hdl.handle.net/1957/49071.

MLA Handbook (7^th Edition):

Cheng, Dan Sang. “The effect of etches on surface recombination in silicon.” 1962. Web. 16 Feb 2019.

Vancouver:

Cheng DS. The effect of etches on surface recombination in silicon. [Internet] [Masters thesis]. Oregon State University; 1962. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/1957/49071.

Council of Science Editors:

Cheng DS. The effect of etches on surface recombination in silicon. [Masters Thesis]. Oregon State University; 1962. Available from: http://hdl.handle.net/1957/49071

Oregon State University

8. Frescura, Bert Louis. Impact ionization in gold-doped silicon.

Degree: MS, Electrical Engineering, 1963, Oregon State University

URL: http://hdl.handle.net/1957/49166

Subjects/Keywords: Silicon

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APA (6^th Edition):

Frescura, B. L. (1963). Impact ionization in gold-doped silicon. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/49166

Chicago Manual of Style (16^th Edition):

Frescura, Bert Louis. “Impact ionization in gold-doped silicon.” 1963. Masters Thesis, Oregon State University. Accessed February 16, 2019. http://hdl.handle.net/1957/49166.

MLA Handbook (7^th Edition):

Frescura, Bert Louis. “Impact ionization in gold-doped silicon.” 1963. Web. 16 Feb 2019.

Vancouver:

Frescura BL. Impact ionization in gold-doped silicon. [Internet] [Masters thesis]. Oregon State University; 1963. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/1957/49166.

Council of Science Editors:

Frescura BL. Impact ionization in gold-doped silicon. [Masters Thesis]. Oregon State University; 1963. Available from: http://hdl.handle.net/1957/49166

Oregon State University

9. Kong, Ming J. Diffusion in silicone polymers.

Degree: MS, Chemistry, 1974, Oregon State University

URL: http://hdl.handle.net/1957/44362

► The study of diffusion coefficients of n-alkanes and other organic compounds in silicones is undertaken by gas-liquid chromatography. About 0. 3% of stationary phase is… (more)

Subjects/Keywords: Silicon

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APA (6^th Edition):

Kong, M. J. (1974). Diffusion in silicone polymers. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/44362

Chicago Manual of Style (16^th Edition):

Kong, Ming J. “Diffusion in silicone polymers.” 1974. Masters Thesis, Oregon State University. Accessed February 16, 2019. http://hdl.handle.net/1957/44362.

MLA Handbook (7^th Edition):

Kong, Ming J. “Diffusion in silicone polymers.” 1974. Web. 16 Feb 2019.

Vancouver:

Kong MJ. Diffusion in silicone polymers. [Internet] [Masters thesis]. Oregon State University; 1974. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/1957/44362.

Council of Science Editors:

Kong MJ. Diffusion in silicone polymers. [Masters Thesis]. Oregon State University; 1974. Available from: http://hdl.handle.net/1957/44362

Oregon State University

10. Lai, Cheng-wen. Microstrips on gold-doped silicon substrates.

Degree: MS, Electrical and Electronics Engineering, 1972, Oregon State University

URL: http://hdl.handle.net/1957/45670

► The power dissipation of microstrip transmission-line on gold-doped silicon substrates was investigated. The gold-doping was applied to a regular n-type silicon substrate with resistivity of… (more)

Subjects/Keywords: Silicon

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APA (6^th Edition):

Lai, C. (1972). Microstrips on gold-doped silicon substrates. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/45670

Chicago Manual of Style (16^th Edition):

Lai, Cheng-wen. “Microstrips on gold-doped silicon substrates.” 1972. Masters Thesis, Oregon State University. Accessed February 16, 2019. http://hdl.handle.net/1957/45670.

MLA Handbook (7^th Edition):

Lai, Cheng-wen. “Microstrips on gold-doped silicon substrates.” 1972. Web. 16 Feb 2019.

Vancouver:

Lai C. Microstrips on gold-doped silicon substrates. [Internet] [Masters thesis]. Oregon State University; 1972. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/1957/45670.

Council of Science Editors:

Lai C. Microstrips on gold-doped silicon substrates. [Masters Thesis]. Oregon State University; 1972. Available from: http://hdl.handle.net/1957/45670

University of British Columbia

11. Drews, Reinhold Eldor. An experimental and theoretical investigation of the statistics of avalanche breakdown in silicon .

Degree: 1957, University of British Columbia

URL: http://hdl.handle.net/2429/40875

► Measurements are made on Si p - n junctions under reverse bias in the unstable avalanche breakdown region to determine the statistics of the current… (more)

▼ Measurements are made on Si p - n junctions under reverse bias in the unstable avalanche breakdown region to determine the statistics of the current pulses, and their effect on the measured mean current - mean voltage characteristics. It is found that the slope and shape of the measured mean current - mean voltage is not unique, but depends on the external resistance in series with the power supply. The mean current - mean voltage characteristics are also found to display turnover, with the voltage at turnover and the magnitude of the maximum negative resistance both increasing with increasing resistance R. Measurements are also made to determine the relation between the current pulse amplitude I₁ and the voltage V₁ across the diode during the avalanche. The results show that over the range where data are available, a linear relation exists between reverse voltage and current pulse amplitude. The intersection of this line with the voltage axis is defined as the breakdown voltage V[subscript B], and its slope is the conductance denoted by g. A simple model consisting of a random switch in series with a two terminal device having the property that for V₁ < V[subscript B], I₁ = 0 and for V₁ > V[subscript B], I₁ = g(V₁- V[subscript B]) is proposed. An avalanche initiation transition probability which increases monotonically with increasing voltage in excess of V[subscript B], and an extinction transition probability which decreases monotonically with increasing excess voltage are postulated. The experimentally derived probability functions satisfy the chosen theoretical functional dependence on excess voltage to within experimental error. Assuming that the "switching" process is Markoffian, an expression for the fraction of the time during which the avalanche occurs is derived. Using this relation and the pulse amplitude data, a theoretical mean current - mean voltage characteristic is obtained which is in good agreement with the experimental curve. The predicted mean pulse rate curve is also experimentally verified. Illumination experiments show that the initiation transition probability is directly proportional to the number of carriers entering the avalanche region; the discharge probability for an electron entering the avalanche region is independent of illumination and carrier density in the breakdown region. The apparent predominance of a form of "surface leakage" in the reverse current makes it impossible to obtain data regarding the discharge probability per incoming electron from temperature variation experiments. Measurements of the spectral density of the current fluctuations over a wide range of frequency confirms the simple form S[subscript I](ω) = S[subscript I](0) / (1 + ω²τ²) associated with a Markoffian process.

Subjects/Keywords: Silicon

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APA (6^th Edition):

Drews, R. E. (1957). An experimental and theoretical investigation of the statistics of avalanche breakdown in silicon . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/40875

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Drews, Reinhold Eldor. “An experimental and theoretical investigation of the statistics of avalanche breakdown in silicon .” 1957. Thesis, University of British Columbia. Accessed February 16, 2019. http://hdl.handle.net/2429/40875.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Drews, Reinhold Eldor. “An experimental and theoretical investigation of the statistics of avalanche breakdown in silicon .” 1957. Web. 16 Feb 2019.

Vancouver:

Drews RE. An experimental and theoretical investigation of the statistics of avalanche breakdown in silicon . [Internet] [Thesis]. University of British Columbia; 1957. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/2429/40875.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Drews RE. An experimental and theoretical investigation of the statistics of avalanche breakdown in silicon . [Thesis]. University of British Columbia; 1957. Available from: http://hdl.handle.net/2429/40875

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of New South Wales

12. Kunz, Oliver. Evaporated solid-phase crystallised poly-silicon thin film solar cells on glass.

Degree: Photovoltaics & Renewable Energy Engineering, 2009, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/43644 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:4983/SOURCE02?view=true

► The cost of photovoltaic electricity needs to be significantly reduced in order to achieve a high electricity market penetration. Thin-film solar cells have good potential… (more)

▼ The cost of photovoltaic electricity needs to be significantly reduced in order to achieve a high electricity market penetration. Thin-film solar cells have good potential to achieve such cost savings though (i) large-area deposition onto low-cost foreign substrates, (ii) more streamlined processing, (iii) monolithic cell interconnection, and very efficient use of the expensive semiconductor material. Polycrystalline silicon (poly-Si) on glass is a promising technology for the cost-effective large volume production of PV modules since it (i) makes use of an abundant raw material, (ii) is non-toxic, (iii) does not suffer from light-induced degradation, and (iv) does not rely on TCO layers. Usually plasma enhanced chemical vapour deposition (PECVD) is used for the layer formation. This thesis explores the use of e-beam evaporation as deposition method since it is potentially much faster and cheaper than PECVD. The resulting solar cells are referred to as EVA (from EVAporation).Two inherent shunting mechanisms in EVA cells are demonstrated to be shunting through sub-micron sized pinholes when the back electrode is deposited and shunting between the emitter and the absorber layer at the glass-side electrode. Through the improved understanding of these shunting mechanisms it was possible to develop a suitable metallisation scheme for EVA cells using an aligned deposition of emitter and back surface field line contacts and a specially developed shunt mitigation etching technique. For the first time appreciable efficiencies of up to 5.2% were demonstrated on this material. It was also shown that only very lightly doped absorber layers can lead to the required high short-circuit currents in EVA cells. The resulting cells are currently completely limited by space charge region recombination occurring with comparatively low ideality factors of only ~ 1.4This thesis also demonstrates the usefulness of Jsc-Suns measurements and investigates optical loss mechanisms in the current devices. Advanced modelling of distributed series resistance effects, influencing Suns-Voc, m-Voc and Jsc-Suns curves, is employed. PC1D modelling is used to extract relevant device parameters. In this work it was found that the diffusion length in the best EVA cells is longer than the absorber layer and that insufficient light trapping is currently the major hurdle to higher cell efficiencies.From the obtained results it can be concluded that EVA solar cells are promising candidates for the low-cost and high-volume production of solar modules. Advisors/Committee Members: Sproul, Alistair, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Varlamov, Sergey, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW.

Subjects/Keywords: Polycrystalline silicon; Polycrystalline silicon; Silicon thin-film solar cells; Evaporated silicon

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APA (6^th Edition):

Kunz, O. (2009). Evaporated solid-phase crystallised poly-silicon thin film solar cells on glass. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/43644 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:4983/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Kunz, Oliver. “Evaporated solid-phase crystallised poly-silicon thin film solar cells on glass.” 2009. Doctoral Dissertation, University of New South Wales. Accessed February 16, 2019. http://handle.unsw.edu.au/1959.4/43644 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:4983/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Kunz, Oliver. “Evaporated solid-phase crystallised poly-silicon thin film solar cells on glass.” 2009. Web. 16 Feb 2019.

Vancouver:

Kunz O. Evaporated solid-phase crystallised poly-silicon thin film solar cells on glass. [Internet] [Doctoral dissertation]. University of New South Wales; 2009. [cited 2019 Feb 16]. Available from: http://handle.unsw.edu.au/1959.4/43644 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:4983/SOURCE02?view=true.

Council of Science Editors:

Kunz O. Evaporated solid-phase crystallised poly-silicon thin film solar cells on glass. [Doctoral Dissertation]. University of New South Wales; 2009. Available from: http://handle.unsw.edu.au/1959.4/43644 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:4983/SOURCE02?view=true

University of New South Wales

13. Pok, Wilson. Atomically abrupt, highly-doped, coplanar nanogaps in silicon.

Degree: ARC Centre of Excellence for Quantum Computer Technology, 2011, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/50217 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9095/SOURCE02?view=true

► In this thesis we investigate electron transport between ultra-thin, atomically abrupt, buried, nanoscale gaps in silicon, formed between coplanar source and drain leads consisting of… (more)

▼ In this thesis we investigate electron transport between ultra-thin, atomically abrupt, buried, nanoscale gaps in silicon, formed between coplanar source and drain leads consisting of highly phosphorus doped silicon. The leads are patterned using scanning probe lithography, dosed with phosphine gas and encapsulated with silicon using low temperature molecular beam epitaxy. These unique tunnel gaps have leads with low sheet resistivities of <1 kohms, are atomically abrupt in all three dimensions, and are scaled down to sub-20 nm dimensions.The overall tunneling resistance of these devices depends exponentially on the aspect ratio (lead width/gap separation) such that, by engineering the gap dimensions, we control the resistance over seven orders of magnitude from <10 kohms to >500 Gohms. This relationship allows us to predictively engineer gap resistance with device geometry. We also demonstrate an asymmetric barriershape, forming an atomic-scale diode with clear rectifying behaviour. We explore six commonly used models to estimate the barrier heights in these nanoscale gaps (rectangular and parabolic barrier models, transition voltage, Fowler-Nordheim field emission and thermionic emission), and where appropriate, adapt these models to include the complex silicon bandstructure. Although these models provide reasonable estimates, no single model describes the conductance over the complete range of gaps studied, and highlight the need for more accurate models that self-consistently account for both tunneling within the electrostatic potential of the exact lead geometry and Thomas-Fermi screening.We develop three different methods of top-gating these devices using a Schottky barrier, a native oxide, or a silicon dioxide dielectric grown at low temperature. The low temperature oxide exhibits the largest gating range, and the overall tunnel gapresistance can be gated by three orders of magnitude. Finally, we investigate the possibility of engineering the dopants between the source and drain leads. We confirm that we can order dopants with sub-10 nm precision in the channel and demonstrate their overall effect on device conductance. This thesis shows that across a statistical number of devices, we can engineer the lead geometry, the tunneling resistance, the barrier height, and the level of disorder, between atomically abrupt source/drain leads.

Subjects/Keywords: Silicon; Nanoelectronics

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APA (6^th Edition):

Pok, W. (2011). Atomically abrupt, highly-doped, coplanar nanogaps in silicon. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/50217 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9095/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Pok, Wilson. “Atomically abrupt, highly-doped, coplanar nanogaps in silicon.” 2011. Doctoral Dissertation, University of New South Wales. Accessed February 16, 2019. http://handle.unsw.edu.au/1959.4/50217 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9095/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Pok, Wilson. “Atomically abrupt, highly-doped, coplanar nanogaps in silicon.” 2011. Web. 16 Feb 2019.

Vancouver:

Pok W. Atomically abrupt, highly-doped, coplanar nanogaps in silicon. [Internet] [Doctoral dissertation]. University of New South Wales; 2011. [cited 2019 Feb 16]. Available from: http://handle.unsw.edu.au/1959.4/50217 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9095/SOURCE02?view=true.

Council of Science Editors:

Pok W. Atomically abrupt, highly-doped, coplanar nanogaps in silicon. [Doctoral Dissertation]. University of New South Wales; 2011. Available from: http://handle.unsw.edu.au/1959.4/50217 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9095/SOURCE02?view=true

University of Minnesota

14. Rastgar, Neema. Effects of water adsorption and surface oxidation on the electrical conductivity of silicon nanocrystal films.

Degree: Material Science and Engineering, 2012, University of Minnesota

URL: http://purl.umn.edu/160270

► Electrical conductivities of thin films of silicon nanocrystals (4-6 nm) exhibit high sensitivity to water vapor. Specifically, water adsorption on the surface of silicon nanocrystal… (more)

Subjects/Keywords: Silicon Nanocrystals

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APA (6^th Edition):

Rastgar, N. (2012). Effects of water adsorption and surface oxidation on the electrical conductivity of silicon nanocrystal films. (Thesis). University of Minnesota. Retrieved from http://purl.umn.edu/160270

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Rastgar, Neema. “Effects of water adsorption and surface oxidation on the electrical conductivity of silicon nanocrystal films.” 2012. Thesis, University of Minnesota. Accessed February 16, 2019. http://purl.umn.edu/160270.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Rastgar, Neema. “Effects of water adsorption and surface oxidation on the electrical conductivity of silicon nanocrystal films.” 2012. Web. 16 Feb 2019.

Vancouver:

Rastgar N. Effects of water adsorption and surface oxidation on the electrical conductivity of silicon nanocrystal films. [Internet] [Thesis]. University of Minnesota; 2012. [cited 2019 Feb 16]. Available from: http://purl.umn.edu/160270.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rastgar N. Effects of water adsorption and surface oxidation on the electrical conductivity of silicon nanocrystal films. [Thesis]. University of Minnesota; 2012. Available from: http://purl.umn.edu/160270

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. Swanepoel, Ryno. Invloed van swaar neutronbestraling op die elektriese eienskappe van suiwer silikon.

Degree: 2015, University of Johannesburg

URL: http://hdl.handle.net/10210/14387

D.Sc..

Please refer to full text to view abstract

Subjects/Keywords: Silicon

1 more image…

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APA (6^th Edition):

Swanepoel, R. (2015). Invloed van swaar neutronbestraling op die elektriese eienskappe van suiwer silikon. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/14387

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Swanepoel, Ryno. “Invloed van swaar neutronbestraling op die elektriese eienskappe van suiwer silikon.” 2015. Thesis, University of Johannesburg. Accessed February 16, 2019. http://hdl.handle.net/10210/14387.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Swanepoel, Ryno. “Invloed van swaar neutronbestraling op die elektriese eienskappe van suiwer silikon.” 2015. Web. 16 Feb 2019.

Vancouver:

Swanepoel R. Invloed van swaar neutronbestraling op die elektriese eienskappe van suiwer silikon. [Internet] [Thesis]. University of Johannesburg; 2015. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/10210/14387.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Swanepoel R. Invloed van swaar neutronbestraling op die elektriese eienskappe van suiwer silikon. [Thesis]. University of Johannesburg; 2015. Available from: http://hdl.handle.net/10210/14387

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Oregon State University

16. Vas-Umnuay, Paravee. Flow characterization of multiple-tube reactors for synthesis of nano-sized silicon nitride powder via silicon monoxide ammonolysis.

Degree: MS, Chemical Engineering, 2008, Oregon State University

URL: http://hdl.handle.net/1957/9531

► Concentrically arranged multiple-tube reactors with different dimensions were built for synthesizing nano-sized silicon nitride powder via the ammonolysis of SiO vapor. The reaction was operated… (more)

▼ Concentrically arranged multiple-tube reactors with different dimensions were built for synthesizing nano-sized silicon nitride powder via the ammonolysis of SiO vapor. The reaction was operated at temperatures ranging from 1350 to 1400°C and pressure slightly above atmospheric pressure. Silicon monoxide (SiO) vapor was generated by charging argon gas through a bed of SiO particles packed in the innermost feeding tube and reacted with ammonia gas introduced through a separate feeding tube into the concentrical arrangement. Additional argon was fed into the annular space between SiO feeder and ammonia feeder to prevent the two reactant gases from reacting instantly at the feeder outlets and forming whiskers. None of the reactors with micro-scale dimensions (less than 1 mm) could be operated stably due to whisker formation at the SiO feeders. On the other hand, a meso-scale reactor with a 3.25 mm ID innermost tube for feeding SiO vapor was successfully operated for synthesizing nano-sized powder at measurable quantities. The velocity feed ratio of argon through a bed of SiO particles/NH₃ was maintained at 8.5 for effective production, maximizing nano-sized powder production and minimizing whisker formation. The arrangement of the feeding tubes of reactor was one of the most important parameters that have a direct influence on nano-sized powder formation. When a SiO generating tube was extended out of the annular Ar feeder, the highest efficiency of nano-sized powder production was obtained. The mean residence time of the reactants in the reacting zone was adjusted by the length of product collection tube placed in the uniform temperature zone and set to be about 0.04 seconds. High reaction temperature promoted the SiO utilization, leading to more nano- sized Si₃N₄ powder as well as Si₃N₄ whiskers at the outlet of the SiO generator. The apparent activation energy for the formation of nano-sized powder was 211 kJ/mol, based on an assumption of first-order with respect to the SiO concentration. The average particle size of nano-sized powder decreased with an increase in the reaction temperature, lying in the same range as obtained in the preceding work. The flow of a gaseous mixture in the reactor was simulated with a math software as an effective aid for identifying a reactor structure and operating variables suitable for synthesizing nano-sized silicon nitride powders. The simulated results suggested the optimal configuration of reactor and operating conditions to be employed in the experimental runs. It also revealed that locations where whiskers form corresponded to those appeared in the experimental runs. Advisors/Committee Members: Kimura, Shoichi (advisor), Chang, Chih-hung (committee member).

Subjects/Keywords: nano-sized silicon nitride; Silicon nitride – Synthesis

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Vas-Umnuay, P. (2008). Flow characterization of multiple-tube reactors for synthesis of nano-sized silicon nitride powder via silicon monoxide ammonolysis. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/9531

Chicago Manual of Style (16^th Edition):

Vas-Umnuay, Paravee. “Flow characterization of multiple-tube reactors for synthesis of nano-sized silicon nitride powder via silicon monoxide ammonolysis.” 2008. Masters Thesis, Oregon State University. Accessed February 16, 2019. http://hdl.handle.net/1957/9531.

MLA Handbook (7^th Edition):

Vas-Umnuay, Paravee. “Flow characterization of multiple-tube reactors for synthesis of nano-sized silicon nitride powder via silicon monoxide ammonolysis.” 2008. Web. 16 Feb 2019.

Vancouver:

Vas-Umnuay P. Flow characterization of multiple-tube reactors for synthesis of nano-sized silicon nitride powder via silicon monoxide ammonolysis. [Internet] [Masters thesis]. Oregon State University; 2008. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/1957/9531.

Council of Science Editors:

Vas-Umnuay P. Flow characterization of multiple-tube reactors for synthesis of nano-sized silicon nitride powder via silicon monoxide ammonolysis. [Masters Thesis]. Oregon State University; 2008. Available from: http://hdl.handle.net/1957/9531

University of California – Berkeley

17. Alper, John Paul. Silicon and Silicon Carbide Nanowires: Synthesis, Characterization, Modification, and Application as Micro-Supercapacitor Electrodes.

Degree: Chemical Engineering, 2014, University of California – Berkeley

URL: http://www.escholarship.org/uc/item/3k9463pp

► For applications in mobile and remote sensing platforms, microsupercapacitors are attractive energy storage devices due to their robust lifetimes and high specific power capacity. Utilization… (more)

▼ For applications in mobile and remote sensing platforms, microsupercapacitors are attractive energy storage devices due to their robust lifetimes and high specific power capacity. Utilization of green electrolytes in these devices reduces environmental impact and simplifies packaging by avoiding the stringent oxygen and moisture free conditions required for organic and ionic liquid based electrolytes. Porous silicon nanowire based microsupercapacitor electrode materials are promising for on chip applications using an environmentally benign aqueous electrolyte, 1 M KCl, however they are prone to oxidation. A silicon carbide coating was found to mitigate this issue. The fabrication techniques, involving low-temperature electroless etching of silicon, are compatible with current integrated circuit processing methods and may be readily integrated at the micro device level. The electrode materials are in good electrical contact with the underlying substrate and require no additional current collector. The base porous silicon nanowires are coated with a thin silicon carbide passivation layer by low pressure chemical vapor deposition. The demonstrated capacitance of the electrode materials, ~1700 μF/cm2 projected area, is comparable to other carbon based microsupercapacitor electrodes, remains stable over many charge/discharge cycles, and maintains capacitive behavior over a wide range of charge/discharge rates. An improved passivation method for the porous silicon nanowires has also been developed. The selective coating procedure deposits an ultra-thin (~ 1-3 nm) carbon sheath over the nanowires and passivates them. The ultra-thin nature of the coating enables solvent access to the pore area and hence a large improvement of active specific surface over the SiC coated PSiNWs discussed above. The electrochemical performance of these coated nanowires is characterized in both an aqueous electrolyte and an ionic liquid electrolyte. Specific capacitance values reaching 325 mF cm 2 are achieved in ionic liquid, and calculations indicate that the theoretical maximum capacitance of the pristine wires is reached. TEM studies confirm the coating thickness and its conformality. Raman spectroscopy indicates that the carbon in the coating is mainly sp2 hybridized, with corresponding high conductivity. At the time of writing, these materials represent the largest specific energy microsupercapacitor electrode published. A test device is prepared and demonstrated powering an LED. The testing results of silicon carbide (SiC) nanowires (NW) as an electrode material for micro-supercapacitors is described. SiC NWs are grown on a SiC thin film coated with a thin Ni catalyst layer via chemical vapor deposition. A specific capacitance of ~240 µF cm-2 is demonstrated. Charge-discharge studies demonstrate the SiC nanowires exhibit exceptional stability, with 95% capacitance retention after 2×105 charge/discharge cycles in an environmentally benign, aqueous electrolyte. Doping of the nanowires with nitrogen through the addition of 5 at%…

Subjects/Keywords: Chemical engineering; microsupercapacitor; nanowires; silicon; silicon carbide

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APA (6^th Edition):

Alper, J. P. (2014). Silicon and Silicon Carbide Nanowires: Synthesis, Characterization, Modification, and Application as Micro-Supercapacitor Electrodes. (Thesis). University of California – Berkeley. Retrieved from http://www.escholarship.org/uc/item/3k9463pp

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Alper, John Paul. “Silicon and Silicon Carbide Nanowires: Synthesis, Characterization, Modification, and Application as Micro-Supercapacitor Electrodes.” 2014. Thesis, University of California – Berkeley. Accessed February 16, 2019. http://www.escholarship.org/uc/item/3k9463pp.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Alper, John Paul. “Silicon and Silicon Carbide Nanowires: Synthesis, Characterization, Modification, and Application as Micro-Supercapacitor Electrodes.” 2014. Web. 16 Feb 2019.

Vancouver:

Alper JP. Silicon and Silicon Carbide Nanowires: Synthesis, Characterization, Modification, and Application as Micro-Supercapacitor Electrodes. [Internet] [Thesis]. University of California – Berkeley; 2014. [cited 2019 Feb 16]. Available from: http://www.escholarship.org/uc/item/3k9463pp.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Alper JP. Silicon and Silicon Carbide Nanowires: Synthesis, Characterization, Modification, and Application as Micro-Supercapacitor Electrodes. [Thesis]. University of California – Berkeley; 2014. Available from: http://www.escholarship.org/uc/item/3k9463pp

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Southern California

18. Deng, Wangxue. Fabrication of silicon carbide sintered supports and silicon carbide membranes.

Degree: PhD, Chemical Engineering, 2013, University of Southern California

URL: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/355292/rec/2700

► Efficient separation of hydrogen (H₂) under high temperatures and pressures is important to the development of the clean-energy industry, and has been among the key… (more)

▼ Efficient separation of hydrogen (H₂) under high temperatures and pressures is important to the development of the clean-energy industry, and has been among the key drivers for research on inorganic membranes for the last two decades. Although substantial efforts have been devoted to date to the preparation of nanoporous membranes for H₂ separation, the fabrication of high-temperature and steam-stable inorganic membranes with high hydrogen fluxes and large separation factors still remains a key challenge. Among all the potential candidates, silicon carbide (SiC) membranes show potential advantages for use in hydrogen separation processes under harsh and corrosive conditions such as, for example, the steam reforming and the water gas shift reactions commonly employed in H₂ production; this is because SiC is a material that has high corrosion resistance, high thermal conductivity, high thermal shock resistance, and excellent chemical and mechanical stability, making it thus a promising material for application in industrial processes for clean energy production. ❧ High-quality porous SiC supports are of great importance in the fabrication of hydrogen permselective SiC nanoporous membranes and their preparation has, thus, been a keen a key focus in this research. In this Thesis, we report on the preparation, via the pressureless sintering of β-SiC powders, of SiC tubular supports that are both highly permeable and mechanically strong. Their transport characteristics were studied via inert-gas permeation tests, while their structure and surface morphology were characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM) analysis. In addition, the effect of varying the composition of starting powders, the sintering temperature, and the amount of sintering aids utilized on the transport characteristics and the surface roughness of such sintered SiC porous supports were also systematically investigated. These tubular SiC supports exhibit high fluxes (a He permeance as high as 5.8×10⁻⁵ mol*m⁻²*s⁻¹*Pa⁻¹) and are mechanically strong (compressive strength as high as 106 MPa) to potentially withstand the pressure drops required in their use as membrane supports. ❧ Utilizing these high-quality SiC sintered supports, nanoporous SiC membranes were prepared by the pyrolysis of thin ally-hydridopolycarbosilane (AHPCS) films coated on such supports, using a combination of slip-casting and dip-coating techniques coupled with periodic coatings of polystyrene sacrificial interlayers. The membranes prepared using these SiC supports are very permselective (a He/Ar separation factor as high as 2000) and exhibit a He permeance as high as 2.4×10⁻⁷ mol*m⁻²*s⁻¹*Pa⁻¹. Advisors/Committee Members: Tsotsis, Theodore T. (Committee Chair), Sahimi, Muhammad (Committee Member), Lu, Grace (Committee Member).

Subjects/Keywords: silicon carbide supports; silicon carbide membranes

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APA (6^th Edition):

Deng, W. (2013). Fabrication of silicon carbide sintered supports and silicon carbide membranes. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/355292/rec/2700

Chicago Manual of Style (16^th Edition):

Deng, Wangxue. “Fabrication of silicon carbide sintered supports and silicon carbide membranes.” 2013. Doctoral Dissertation, University of Southern California. Accessed February 16, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/355292/rec/2700.

MLA Handbook (7^th Edition):

Deng, Wangxue. “Fabrication of silicon carbide sintered supports and silicon carbide membranes.” 2013. Web. 16 Feb 2019.

Vancouver:

Deng W. Fabrication of silicon carbide sintered supports and silicon carbide membranes. [Internet] [Doctoral dissertation]. University of Southern California; 2013. [cited 2019 Feb 16]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/355292/rec/2700.

Council of Science Editors:

Deng W. Fabrication of silicon carbide sintered supports and silicon carbide membranes. [Doctoral Dissertation]. University of Southern California; 2013. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/355292/rec/2700

University of the Western Cape

19. Oliphant, Clive Justin. Hot-wire chemical vapour deposition of nanocrystalline silicon and silicon nitride : growth mechanisms and filament stability .

Degree: 2012, University of the Western Cape

URL: http://hdl.handle.net/11394/5203

► Nanocrystalline silicon (nc-Si:H) is an interesting type of silicon with superior electrical properties that are more stable compared to amorphous silicon (a-Si:H). Silicon nitride (SiNₓ)… (more)

▼ Nanocrystalline silicon (nc-Si:H) is an interesting type of silicon with superior electrical properties that are more stable compared to amorphous silicon (a-Si:H). Silicon nitride (SiNₓ) thin films are currently the dielectric widely applied in the microelectronics industry and are also effective antireflective and passivating layers for multicrystalline silicon solar cells. Research into the synthesis and characterization of nc-Si:H and SiNₓ thin films is vital from a renewable energy aspect. In this thesis we investigated the film growth mechanisms and the filament stability during the hot-wire chemical vapour deposition (HWCVD) of nc-Si:H and SiNₓ thin films. During the HWCVD of nc-Si:H, electron backscatter diffraction (EBSD) revealed that the tantalum (Ta) filament aged to consists of a recrystallized Ta-core with Ta-rich silicides at the hotter centre regions and Si-rich Ta-silicides at the cooler ends nearer to the electrical contacts. The growth of nc-Si:H by HWCVD is controlled by surface reactions before and beyond the transition from a-Si:H to nc-Si:H. During the transition, the diffusion of hydrogen (H) within the film is proposed to be the reaction controlling step. The deposition pressure influenced the structural, mechanical and optical properties of nc-Si:H films mostly when the film thickness is below 250 nm. The film stress, optical band gap, refractive index and crystalline volume fraction approached similar values at longer deposition times irrespective of the deposition pressure. Filament degradation occurred during the HWCVD of SiNₓ thin films from low total flow rate SiH₄ / ammonia (NH₃) / H₂ gas mixture. Similar to the HWCVD of nc-Si:H, the Ta-core recrystallized and silicides formed around the perimeter. However, Tanitrides formed within the filament bulk. The extent of nitride and silicide formation, porosity and cracks were all enhanced at the hotter centre regions, where filament failure eventually occurred. We also applied HWCVD to deposit transparent, low reflective and hydrogen containing SiNₓ thin films at total gas flow rates less than 31 sccm with NH₃ flow rates as low as 3 sccm. Fluctuations within the SiNₓ thin film growth rates were attributed to the depletion of growth species (Si, N, and H) from the ambient and their incorporation within the filament during its degradation. Advisors/Committee Members: Arendse, C. J (advisor), Knoesen, D (advisor), Muller, T. F. G (advisor).

Subjects/Keywords: Nanocrystalline silicon; Silicon nitride; Electron backscatter diffraction

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APA (6^th Edition):

Oliphant, C. J. (2012). Hot-wire chemical vapour deposition of nanocrystalline silicon and silicon nitride : growth mechanisms and filament stability . (Thesis). University of the Western Cape. Retrieved from http://hdl.handle.net/11394/5203

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Oliphant, Clive Justin. “Hot-wire chemical vapour deposition of nanocrystalline silicon and silicon nitride : growth mechanisms and filament stability .” 2012. Thesis, University of the Western Cape. Accessed February 16, 2019. http://hdl.handle.net/11394/5203.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Oliphant, Clive Justin. “Hot-wire chemical vapour deposition of nanocrystalline silicon and silicon nitride : growth mechanisms and filament stability .” 2012. Web. 16 Feb 2019.

Vancouver:

Oliphant CJ. Hot-wire chemical vapour deposition of nanocrystalline silicon and silicon nitride : growth mechanisms and filament stability . [Internet] [Thesis]. University of the Western Cape; 2012. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/11394/5203.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Oliphant CJ. Hot-wire chemical vapour deposition of nanocrystalline silicon and silicon nitride : growth mechanisms and filament stability . [Thesis]. University of the Western Cape; 2012. Available from: http://hdl.handle.net/11394/5203

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Minnesota

20. Wienkes, Lee Raymond. Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films.

Degree: PhD, Physics, 2013, University of Minnesota

URL: http://purl.umn.edu/154984

► Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological… (more)

Subjects/Keywords: Amorphous silicon; Electronic transport; Hopping; Nanocrystalline silicon

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APA (6^th Edition):

Wienkes, L. R. (2013). Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films. (Doctoral Dissertation). University of Minnesota. Retrieved from http://purl.umn.edu/154984

Chicago Manual of Style (16^th Edition):

Wienkes, Lee Raymond. “Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films.” 2013. Doctoral Dissertation, University of Minnesota. Accessed February 16, 2019. http://purl.umn.edu/154984.

MLA Handbook (7^th Edition):

Wienkes, Lee Raymond. “Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films.” 2013. Web. 16 Feb 2019.

Vancouver:

Wienkes LR. Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films. [Internet] [Doctoral dissertation]. University of Minnesota; 2013. [cited 2019 Feb 16]. Available from: http://purl.umn.edu/154984.

Council of Science Editors:

Wienkes LR. Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films. [Doctoral Dissertation]. University of Minnesota; 2013. Available from: http://purl.umn.edu/154984

Rochester Institute of Technology

21. Narayanan, Karthik. Hydrogenated amorphous silicon photonics.

Degree: PhD, Microsystems Engineering, 2011, Rochester Institute of Technology

URL: https://scholarworks.rit.edu/theses/10

► Silicon Photonics is quickly proving to be a suitable interconnect technology for meeting the future goals of on-chip bandwidth and low power requirements. However, it… (more)

▼ Silicon Photonics is quickly proving to be a suitable interconnect technology for meeting the future goals of on-chip bandwidth and low power requirements. However, it is not clear how silicon photonics will be integrated into CMOS chips, particularly microprocessors. The issue of integrating photonic circuits into electronic IC fabrication processes to achieve maximum flexibility and minimize complexity and cost is an important one. In order to maximize usage of chip real estate, it will be advantageous to integrate in three-dimensions. Hydrogenated-amorphous silicon (a-Si:H) is emerging as a promising material for the 3-D integration of silicon photonics for on-chip optical interconnects. In addition, a-Si:H film can be deposited using CMOS compatible low temperature plasma-enhanced chemical vapor deposition (PECVD) process at any point in the fabrication process allowing vertical stacking of optical interconnects. In this thesis we demonstrate a-Si:H as a high performance alternate platform to crystalline silicon, enabling backend integration of optical interconnects in a hybrid photonic-electronic network-on-chip architecture. High quality passive devices are fabricated on a low-loss a-Si:H platform enabling wavelength division multiplexing schemes. We demonstrate a broadband all-optical modulation scheme based on free-carrier absorption effect, which can enable compact electro-optic modulators in a-Si:H. Furthermore, we comprehensively characterize the optical nonlinearities in a-Si:H and observe that a-Si:H exhibits enhanced nonlinearities as compared to crystalline silicon. Based on the enhanced nonlinearities, we demonstrate low-power four-wave mixing in a-Si:H waveguides enabling high-speed all-optical devices in an a-Si:H platform. Finally, we demonstrate a novel data encoding scheme using thermal and all-optical tuning of silicon waveguides, increasing the spectral efficiency in an interconnect link. Looking forward, we shall also discuss some of the challenges that still need to be overcome to realize an integrated a-Si:H based photonic link. Advisors/Committee Members: Preble, Stefan.

Subjects/Keywords: Amorphous silicon photonics; Nonlinear photonics; Silicon photonics

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APA (6^th Edition):

Narayanan, K. (2011). Hydrogenated amorphous silicon photonics. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/10

Chicago Manual of Style (16^th Edition):

Narayanan, Karthik. “Hydrogenated amorphous silicon photonics.” 2011. Doctoral Dissertation, Rochester Institute of Technology. Accessed February 16, 2019. https://scholarworks.rit.edu/theses/10.

MLA Handbook (7^th Edition):

Narayanan, Karthik. “Hydrogenated amorphous silicon photonics.” 2011. Web. 16 Feb 2019.

Vancouver:

Narayanan K. Hydrogenated amorphous silicon photonics. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2011. [cited 2019 Feb 16]. Available from: https://scholarworks.rit.edu/theses/10.

Council of Science Editors:

Narayanan K. Hydrogenated amorphous silicon photonics. [Doctoral Dissertation]. Rochester Institute of Technology; 2011. Available from: https://scholarworks.rit.edu/theses/10

University of Rochester

22. Ni, Shih-Kai. Electrical properties and infrared luminescence of Er:SiO2/nc-Si multilayers under lateral carrier injection.

Degree: PhD, 2014, University of Rochester

URL: http://hdl.handle.net/1802/28525

► The work described in this thesis presents investigations of Er-doped SiO2/nc-Si (nanocrystalline silicon) multilayers operating under a novel lateral electrical pumping geometry. The motivation for… (more)

▼ The work described in this thesis presents investigations of Er-doped SiO2/nc-Si (nanocrystalline silicon) multilayers operating under a novel lateral electrical pumping geometry. The motivation for this study is to design and prototype an efficient Si-based light emitting p-i-n device working at 1535 nm, in the forward bias regime. The first part presents the electrical properties of Er-doped SiO2/nc-Si multilayers where each layer is a few nm thick. The current – voltage characteristics taken from samples fabricated under various depositions as well as annealing conditions are presented. It is also demonstrated that lateral current can flow through multilayers with nm-thick layers. A space charge limited current model was used to explain the collected I-V relations. The next part of this work is focused on investigations of infrared electroluminescence (EL) from Er-doped multilayers. When electrons and holes are injected in the intrinsic region of a p-i-n device, they can excite the Er ions in the SiO2 layers via energy transfer from the Si layers. The precisely defined Er-Si distance guaranteed by the very good controllability of the deposition method is one of the most crucial parameters to achieve an effective energy transfer from nc-Si to Er. The major advantage of the proposed lateral carrier injection approach, compared to vertical carrier injection though multiple SiO2 layers, is that transport is much easier and more efficient. The infrared electroluminescence (EL) and photoluminescence (PL) spectra show identical features, which leads us to the conclusion that the mechanisms of Er excitation via energy transfer and relaxation are similar in these two experiments. The observed strong PL under Er off-resonance excitation and EL under forward bias are very promising for Si-based light sources - the missing link in an all-silicon on-chip optical interconnection system. The final part of the work focuses on optimizing parameters of the structure to design a stable, strong and efficient infrared electroluminescent device. The final goal of this work is to achieve electrical gain from the proposed device. Increased infrared transmission at 1535nm under electrical pumping indicates that gain has been achieved for TM polarized light.

Subjects/Keywords: Nanocrystalline silicon; Electrical luminescence; Multilayers; Silicon laser

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APA (6^th Edition):

Ni, S. (2014). Electrical properties and infrared luminescence of Er:SiO2/nc-Si multilayers under lateral carrier injection. (Doctoral Dissertation). University of Rochester. Retrieved from http://hdl.handle.net/1802/28525

Chicago Manual of Style (16^th Edition):

Ni, Shih-Kai. “Electrical properties and infrared luminescence of Er:SiO2/nc-Si multilayers under lateral carrier injection.” 2014. Doctoral Dissertation, University of Rochester. Accessed February 16, 2019. http://hdl.handle.net/1802/28525.

MLA Handbook (7^th Edition):

Ni, Shih-Kai. “Electrical properties and infrared luminescence of Er:SiO2/nc-Si multilayers under lateral carrier injection.” 2014. Web. 16 Feb 2019.

Vancouver:

Ni S. Electrical properties and infrared luminescence of Er:SiO2/nc-Si multilayers under lateral carrier injection. [Internet] [Doctoral dissertation]. University of Rochester; 2014. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/1802/28525.

Council of Science Editors:

Ni S. Electrical properties and infrared luminescence of Er:SiO2/nc-Si multilayers under lateral carrier injection. [Doctoral Dissertation]. University of Rochester; 2014. Available from: http://hdl.handle.net/1802/28525

Uppsala University

23. Lindgren, Fredrik. Silicon as Negative Electrode Material for Lithium-ion Batteries.

Degree: Materials Chemistry, 2010, Uppsala University

URL: http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-121210

► The performance of negative electrodes based on Si nanoparticles for Li-ion batteries has been investigated. Electrodes consisted of Si nanoparticles, carbon black and Na-CMC.… (more)

Subjects/Keywords: silicon; anodes; electrodes

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APA (6^th Edition):

Lindgren, F. (2010). Silicon as Negative Electrode Material for Lithium-ion Batteries. (Thesis). Uppsala University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-121210

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Lindgren, Fredrik. “Silicon as Negative Electrode Material for Lithium-ion Batteries.” 2010. Thesis, Uppsala University. Accessed February 16, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-121210.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Lindgren, Fredrik. “Silicon as Negative Electrode Material for Lithium-ion Batteries.” 2010. Web. 16 Feb 2019.

Vancouver:

Lindgren F. Silicon as Negative Electrode Material for Lithium-ion Batteries. [Internet] [Thesis]. Uppsala University; 2010. [cited 2019 Feb 16]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-121210.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lindgren F. Silicon as Negative Electrode Material for Lithium-ion Batteries. [Thesis]. Uppsala University; 2010. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-121210

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Texas A&M University

24. Titriku, Alex K. Efficient Wavelength Tuning Techniques for Integrated Silicon Photonics.

Degree: 2014, Texas A&M University

URL: http://hdl.handle.net/1969.1/154190

► The past decade has seen a significant amount of academic and industrial research into interconnect topologies that employ optical channels for next generation high speed… (more)

▼ The past decade has seen a significant amount of academic and industrial research into interconnect topologies that employ optical channels for next generation high speed communication systems. Integrated optical interconnects have taken center stage in tackling channel loss limitations of traditional electrical links and bandwidth requirements for inter-chip and intra-chip signal processing for multi-core processors. Wavelength-division multiplexing (WDM) optical interconnect architectures based on microring resonator devices offer a low-area and energy-efficient approach to realize both high-speed modulation and WDM with high-speed transmit-side ring modulators and high-Q receive-side drop filters. At the heart of silicon photonics is the silicon microring resonator. These high-Q refractive devices can achieve high contrast ratios with their small footprint and enable distance independent communication. A major challenge to the use of microring resonators is the sensitivity of their resonance wavelength to process and fabrication imperfections and temperature perturbations. To curtail the effects of resonance wavelength drifts, stabilization schemes are implemented to properly align the resonance wavelength of the microring device with the input laser wavelength. This thesis work focuses on three main issues. Firstly, the sources and effects of mismatch in silicon microring resonators are identified. Secondly, a review of literature is done to examine existing resonance wavelength stabilization techniques. Based on the reference search tuning algorithm, a new dual-loop tuning method which combines the benefits of bias-based and thermal-based tuning schemes is proposed. Furthermore, we evaluate the tuning efficiency of some existing and the proposed tuning schemes using a statistical model to determine optimal power and speed efficiency. Modeling results of carrier injection ring resonator devices with common thermal tuning and the new dual-bias/thermal scheme reveals that the latter scheme offers ~ 50% improvement in power with small variations and close to 16X speed improvement. Finally, the tuning control loop is fabricated in GP 65nm CMOS process. Transmit-side and receive-side are independently implemented for a 5-channel WDM system. Measurement results are presented in both cases. The transmitter IC achieved both static and dynamic tuning, stabilizing ring resonance wavelength in the midst of temperature fluctuations from an adjacent ring. The total power consumed was 5.17mW while covering a wavelength tuning range of ~ 0:8nm. Static tuning was successfully demonstrated for the receiver IC. A tuning range of 0:7nm was achieved over a 2mA dynamic range of current. Advisors/Committee Members: Palermo, Samuel (advisor), Sanchez-Sinencio, Edgar (committee member), Narayanan, Krishna (committee member), Choe, Yoonsuck (committee member).

Subjects/Keywords: Silicon; photonics; tuning

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APA (6^th Edition):

Titriku, A. K. (2014). Efficient Wavelength Tuning Techniques for Integrated Silicon Photonics. (Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/154190

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Titriku, Alex K. “Efficient Wavelength Tuning Techniques for Integrated Silicon Photonics.” 2014. Thesis, Texas A&M University. Accessed February 16, 2019. http://hdl.handle.net/1969.1/154190.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Titriku, Alex K. “Efficient Wavelength Tuning Techniques for Integrated Silicon Photonics.” 2014. Web. 16 Feb 2019.

Vancouver:

Titriku AK. Efficient Wavelength Tuning Techniques for Integrated Silicon Photonics. [Internet] [Thesis]. Texas A&M University; 2014. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/1969.1/154190.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Titriku AK. Efficient Wavelength Tuning Techniques for Integrated Silicon Photonics. [Thesis]. Texas A&M University; 2014. Available from: http://hdl.handle.net/1969.1/154190

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Univerzitet u Beogradu

25. Alkoash, Abedalhkem Sleman Ahmed, 1969-. Silicon and silicon-carbide unipolar devices njith specific geometry.

Degree: Tehnološko-metalurški fakultet, 2016, Univerzitet u Beogradu

URL: https://fedorabg.bg.ac.rs/fedora/get/o:12183/bdef:Content/get

►

Elektrotehnika / Electrical engineering

The emergence of silicon carbide (SiC) based power semiconductor switches with their superior features compared with silicon (Si) based switches has… (more)

▼

Elektrotehnika / Electrical engineering

The emergence of silicon carbide (SiC) based power semiconductor switches with their superior features compared with silicon (Si) based switches has resulted in substantial improvements in the performance of power electronics converter systems. These systems with SiC power devices are more compact, lighter, and more efficient, so they are ideal for high-voltage power electronics applications including hybrid electric vehicle (HEV) power converters. In this dissertation, first In this section we studied physically based improvement of the analytical model for a vertical double implanted metal-oxide-semiconductor (DIMOS) transistor in 4H-Silicon Carbide (4H-SiC) is suggested. Special attention has been paid to its vertical section, i.e. to its geometrical profile. The answer to the question where this vertical region starts narrowing and how abruptly it happens has been found exploiting some fundamental principles of physics. This has made possible to considerably reduce the number of free parameters appearing in the construction of current-voltage characteristics. In recent years, studies about Dual- Material Surrounding-Gate (DMSG) transistor have successively been proposed, and have attached a lot of attention. For future ULSI’S design, it is shown that Dual- Material Surrounding-Gate (DMSG) transistor have the following advantages, such as: reduced reduced short channel effects (SCEs), high packing density, high-speed cut-off frequency, low-power consumption, the application of Stacked circuit design, the excellent gate control ability over the channel and reduced fringe-induced barrier lowering (FIBL). To apply the device to the simulation, it is necessary to develop an analytical 2D model to predict precisely the performance of the Dual- Material Surrounding-Gate (DMSG) transistor MOSFETs. On the basis of fully solution of two dimensional Poisson’s equation, a new two dimensional model including channel potential, threshold voltage, subthreshold swing and subthreshold current for Dual- Material Surrounding-Gate (DMSG) MOSFETs is successfully developed. The new model is verified by published numerical simulations with a close agreement. This model can be applied for SPISE simulation because of its efficient computation.

Advisors/Committee Members: Šašić, Rajko, 1960-.

Subjects/Keywords: silicon; unipolar devices

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APA (6^th Edition):

Alkoash, Abedalhkem Sleman Ahmed, 1. (2016). Silicon and silicon-carbide unipolar devices njith specific geometry. (Thesis). Univerzitet u Beogradu. Retrieved from https://fedorabg.bg.ac.rs/fedora/get/o:12183/bdef:Content/get

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Alkoash, Abedalhkem Sleman Ahmed, 1969-. “Silicon and silicon-carbide unipolar devices njith specific geometry.” 2016. Thesis, Univerzitet u Beogradu. Accessed February 16, 2019. https://fedorabg.bg.ac.rs/fedora/get/o:12183/bdef:Content/get.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Alkoash, Abedalhkem Sleman Ahmed, 1969-. “Silicon and silicon-carbide unipolar devices njith specific geometry.” 2016. Web. 16 Feb 2019.

Vancouver:

Alkoash, Abedalhkem Sleman Ahmed 1. Silicon and silicon-carbide unipolar devices njith specific geometry. [Internet] [Thesis]. Univerzitet u Beogradu; 2016. [cited 2019 Feb 16]. Available from: https://fedorabg.bg.ac.rs/fedora/get/o:12183/bdef:Content/get.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Alkoash, Abedalhkem Sleman Ahmed 1. Silicon and silicon-carbide unipolar devices njith specific geometry. [Thesis]. Univerzitet u Beogradu; 2016. Available from: https://fedorabg.bg.ac.rs/fedora/get/o:12183/bdef:Content/get

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Akron

26. Withanage, Sajeevi Sankalpani. Formation of Surface Features in Boron-Doped Silicon (100) in the Presence of Propan-2-OL.

Degree: MS, Physics, 2015, University of Akron

URL: http://rave.ohiolink.edu/etdc/view?acc_num=akron1433770676

► Silicon is the most commonly used material for semiconductor device fabrication. Atomic force microscope/microscopy (AFM)-based nanolithography is a technique used in nanofabrication. Techniques discussed in… (more)

Subjects/Keywords: Physics; Silicon, Nanolithography

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APA (6^th Edition):

Withanage, S. S. (2015). Formation of Surface Features in Boron-Doped Silicon (100) in the Presence of Propan-2-OL. (Masters Thesis). University of Akron. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=akron1433770676

Chicago Manual of Style (16^th Edition):

Withanage, Sajeevi Sankalpani. “Formation of Surface Features in Boron-Doped Silicon (100) in the Presence of Propan-2-OL.” 2015. Masters Thesis, University of Akron. Accessed February 16, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=akron1433770676.

MLA Handbook (7^th Edition):

Withanage, Sajeevi Sankalpani. “Formation of Surface Features in Boron-Doped Silicon (100) in the Presence of Propan-2-OL.” 2015. Web. 16 Feb 2019.

Vancouver:

Withanage SS. Formation of Surface Features in Boron-Doped Silicon (100) in the Presence of Propan-2-OL. [Internet] [Masters thesis]. University of Akron; 2015. [cited 2019 Feb 16]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=akron1433770676.

Council of Science Editors:

Withanage SS. Formation of Surface Features in Boron-Doped Silicon (100) in the Presence of Propan-2-OL. [Masters Thesis]. University of Akron; 2015. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=akron1433770676

Penn State University

27. Baril, Neil F. HIGH-PRESSURE MICROFLUIDIC CHEMICAL DEPOSITION: REPLACING THE AIR WITHIN MICROSTRUCTURED OPTICAL FIBERS.

Degree: PhD, Chemistry, 2008, Penn State University

URL: https://etda.libraries.psu.edu/catalog/8906

► There is currently great interest in advancing both the fundamental technology and underlying science of electronics and photonics. As chemists we can contribute to this… (more)

▼ There is currently great interest in advancing both the fundamental technology and underlying science of electronics and photonics. As chemists we can contribute to this area through the synthesis and fabrication of new materials and materials structures with novel or interesting optical and/or electronic properties. Synthesis of materials within templates, in particular, is one powerful tool for realizing this goal. In this work microstructured optical fibers have been employed as templates for the synthesis and organization of materials. High-pressure gas mixtures containing chemical precursors have been configured to flow through the capillaries of MOFs and thermally decomposed depositing materials onto the walls of the capillaries. The deposition of silicon and germanium within the capillaries of various MOF templates has been investigated. The deposition conditions, including temperature, pressure, and concentration, have been refined such that it is possible to deposit solid microwires of silicon and germanium several centimeters in length within the MOFs. Deposition of germanium within a 100 nm capillary over several centimeters has been demonstrated and confirmed by Raman spectra and FESEM cross sections. The thermal annealing conditions to produce high quality crystalline materials without degradation of the MOF integrity have also been investigated. Infiber solid polycrystalline silicon microwire waveguides exhibiting low optical attenuation, 5.8dB/cm at 1.55 μm, and high electron mobilities are demonstrated. This value is the lowest reported for any type of polycrystalline silicon waveguide. Junctions, which are the foundation of semiconductor devices, have been produced within the capillaries of MOFs via sequential deposition of materials. Semiconductorsemiconductor and metal-semiconductor hetero-junctions are demonstrated. Demonstration of such junctions opens the door to the fabrication of many potential in-fiber devices. A traveling furnace platform was constructed for the deposition of uniform layers. Deposition with the traveling furnace is investigated and the formation of a highly uniform layer in a 1 m long 100 μm capillary is presented. The deposition of a silicon-germanium junction with uniform thickness over 1 m in length is demonstrated. The deposition chemistry of silicon carbide and silicon nitride has also been investigated. The ability to tune material composition and optical properties by adjusting the deposition temperature and the concentration of hydrogen gas in the precursor gas mixture is presented. Silicon carbide layers with uniform composition were deposited within a 100 μm capillary using a traveling furnace.

Subjects/Keywords: optical fiber; Silicon

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APA (6^th Edition):

Baril, N. F. (2008). HIGH-PRESSURE MICROFLUIDIC CHEMICAL DEPOSITION: REPLACING THE AIR WITHIN MICROSTRUCTURED OPTICAL FIBERS. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/8906

Chicago Manual of Style (16^th Edition):

Baril, Neil F. “HIGH-PRESSURE MICROFLUIDIC CHEMICAL DEPOSITION: REPLACING THE AIR WITHIN MICROSTRUCTURED OPTICAL FIBERS.” 2008. Doctoral Dissertation, Penn State University. Accessed February 16, 2019. https://etda.libraries.psu.edu/catalog/8906.

MLA Handbook (7^th Edition):

Baril, Neil F. “HIGH-PRESSURE MICROFLUIDIC CHEMICAL DEPOSITION: REPLACING THE AIR WITHIN MICROSTRUCTURED OPTICAL FIBERS.” 2008. Web. 16 Feb 2019.

Vancouver:

Baril NF. HIGH-PRESSURE MICROFLUIDIC CHEMICAL DEPOSITION: REPLACING THE AIR WITHIN MICROSTRUCTURED OPTICAL FIBERS. [Internet] [Doctoral dissertation]. Penn State University; 2008. [cited 2019 Feb 16]. Available from: https://etda.libraries.psu.edu/catalog/8906.

Council of Science Editors:

Baril NF. HIGH-PRESSURE MICROFLUIDIC CHEMICAL DEPOSITION: REPLACING THE AIR WITHIN MICROSTRUCTURED OPTICAL FIBERS. [Doctoral Dissertation]. Penn State University; 2008. Available from: https://etda.libraries.psu.edu/catalog/8906

Penn State University

28. Winter, Christopher Aylwin. Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach.

Degree: MS, Engineering Science, 2011, Penn State University

URL: https://etda.libraries.psu.edu/catalog/11658

► For nearly a decade silicon nanowires have been the subject of intense research. Future integration of silicon nanowires into commercial devices requires the development and… (more)

▼ For nearly a decade silicon nanowires have been the subject of intense research. Future integration of silicon nanowires into commercial devices requires the development and further refinement of methods for synthesizing and assembling these nanowires into densely packed rational structures with high accuracy and repeatability. Current methods have two broad classifications: “grow-and-place” and “grow-in-place”. The former procedure involves forming the nanowires away from their final orientation, harvesting them from this growth area, and finally placing them in desired positions. The latter procedure sidesteps the problems associated with the harvesting and placement steps of the “grow-and-place” method by forming the nanowires in their final preferred arrangement. In this thesis, we propose a novel self-assembling variation of the “grow-in-place” approach for SiNW growth where the interfacial area of the nanochannel template interface can be formed out of various materials. This research has improved on our group’s previous in-template “grow-in-place” approach by growing SiNWs with smooth morphology and good electrical properties upon partial exposure while still retaining the benefits of the original “grow-in-place” approach, including good control of the SiNW size, number, orientation, position, and shape. The SiNWs grown using this approach were found to be morphologically smooth, composed of crystalline silicon and exhibited good electrical characteristics. Additionally, in this thesis we explore the use of a metal adhesion layer as a means of controlling SiNW electrical characteristics. Specifically, this thesis compared iii electrical characteristics of SiNWs grown using aluminum or titanium as an adhesion layer versus SiNWs grown without an adhesion layer and found that the SiNWs grown with aluminum or titanium as an adhesion layer were, on average, 6 or 9 times, respectively, more conductive than the SiNWs grown without an adhesion layer. Finally, this thesis presents evidence that nanowires grown using built-in platinum contacts form in a dual-material structure. This evidence is in the form of high- magnification FESEM images. It is suggested that, in the inter-contact region, the platinum silicide grew as the “shell” of the nanowire structure and that the core remained silicon because of the physical configuration of the nanochannel.

Subjects/Keywords: silicon nanowire; growth

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APA (6^th Edition):

Winter, C. A. (2011). Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach. (Masters Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/11658

Chicago Manual of Style (16^th Edition):

Winter, Christopher Aylwin. “Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach.” 2011. Masters Thesis, Penn State University. Accessed February 16, 2019. https://etda.libraries.psu.edu/catalog/11658.

MLA Handbook (7^th Edition):

Winter, Christopher Aylwin. “Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach.” 2011. Web. 16 Feb 2019.

Vancouver:

Winter CA. Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach. [Internet] [Masters thesis]. Penn State University; 2011. [cited 2019 Feb 16]. Available from: https://etda.libraries.psu.edu/catalog/11658.

Council of Science Editors:

Winter CA. Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach. [Masters Thesis]. Penn State University; 2011. Available from: https://etda.libraries.psu.edu/catalog/11658

McMaster University

29. Wang, Zhao. Silicon micro-ring resonator modulator for inter/intra-data centre applications.

Degree: PhD, 2017, McMaster University

URL: http://hdl.handle.net/11375/22105

►

The recent and rapid growth of silicon photonics is driven by the ever-increasing demand for bandwidth inside and between data centres. Silicon photonics can offer… (more)

Subjects/Keywords: Silicon Photonics; modulator

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APA (6^th Edition):

Wang, Z. (2017). Silicon micro-ring resonator modulator for inter/intra-data centre applications. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/22105

Chicago Manual of Style (16^th Edition):

Wang, Zhao. “Silicon micro-ring resonator modulator for inter/intra-data centre applications.” 2017. Doctoral Dissertation, McMaster University. Accessed February 16, 2019. http://hdl.handle.net/11375/22105.

MLA Handbook (7^th Edition):

Wang, Zhao. “Silicon micro-ring resonator modulator for inter/intra-data centre applications.” 2017. Web. 16 Feb 2019.

Vancouver:

Wang Z. Silicon micro-ring resonator modulator for inter/intra-data centre applications. [Internet] [Doctoral dissertation]. McMaster University; 2017. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/11375/22105.

Council of Science Editors:

Wang Z. Silicon micro-ring resonator modulator for inter/intra-data centre applications. [Doctoral Dissertation]. McMaster University; 2017. Available from: http://hdl.handle.net/11375/22105

Oregon State University

30. O'Connell, Steven G. New applications and emerging contaminants : developing silicone passive sampling devices for environmental and novel monitoring applications.

Degree: PhD, Toxicology, 2014, Oregon State University

URL: http://hdl.handle.net/1957/47613

► Passive sampling is a popular technology for environmental monitoring, and silicone is an ideal choice for a variety of passive sampling applications. The silicone work… (more)

▼ Passive sampling is a popular technology for environmental monitoring, and silicone is an ideal choice for a variety of passive sampling applications. The silicone work described here encompasses laboratory and field studies that demonstrate the use of this polymer in novel environments, for new applications, and for emerging compounds. Unique attributes of silicone polymers make them advantageous for targeting semi-polar contaminants not typically targeted in environmental research. Oxygenated polycyclic hydrocarbons (OPAHs) represent an emerging class of contaminants with chemical properties well suited to silicone passive sampling. The first challenge was to create a robust OPAH analytical method to examine these compounds in silicone, and two independent methods (liquid as well as gas chromatography) were optimized and demonstrated for 24 ketone-containing aromatic hydrocarbons, more than other methods published at that time. An isotopically labeled OPAH was used as an internal standard in contrast to previous methods which used only labeled polycyclic aromatic hydrocarbons (PAHs). The efficacy of each method was further demonstrated by comparing standard addition to internal standard quantitation. Next, OPAHs, PAHs and pesticides were used to compare several silicone materials with low density polyethylene (LDPE) at Portland Harbor Superfund field sites. Target analyte detection, precision, and practical considerations in the field and laboratory were used to evaluate silicone materials. Individual differences between LDPE and the most optimal silicone polymer for OPAHs highlighted the importance of using optimized methods or polymer choice for a particular analyte class. Biggest differences were found for 9-fluorenone, benzanthrone, and 5,12-naphtacenequinone. After this successful polymer comparison, the next study involved a novel application of silicone wristbands as personal passive samplers. Commercially available silicone was modified to serve as personal samplers and tested in both an ambient and occupational settings. Silicone wristbands provided a valuable tool to monitor individual exposures that were time weighted averages of personalized exposure. The ambient study captured 49 individual compounds including PAHs, personal and consumer products, pesticides, phthalates, and as well as other industrial compounds. In the occupational study, roofers working with hot asphalt wore silicone samplers and evidence of both temporal (day versus week deployment, p < 0.05), and spatial (between two roofing sites p < 0.05), sensitivity was found for PAHs, and two OPAHs were detected in some samplers as well (9-fluorenone and benzofluorenone). Finally, another novel application was developed for silicone as an in vivo monitor of persistent organic pollutants. Human silicone breast explants were found to contain chlorinated pesticides, and p,p-DDE and PCB 118 were used in murine models as an in vivo sampler to explore silicone as a biomonitor and sink of organic contaminant exposure. Silicone was found to sequester… Advisors/Committee Members: Anderson, Kim A. (advisor), Beckman, Joe (committee member).

Subjects/Keywords: passive; Silicon polymers

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APA (6^th Edition):

O'Connell, S. G. (2014). New applications and emerging contaminants : developing silicone passive sampling devices for environmental and novel monitoring applications. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/47613

Chicago Manual of Style (16^th Edition):

O'Connell, Steven G. “New applications and emerging contaminants : developing silicone passive sampling devices for environmental and novel monitoring applications.” 2014. Doctoral Dissertation, Oregon State University. Accessed February 16, 2019. http://hdl.handle.net/1957/47613.

MLA Handbook (7^th Edition):

O'Connell, Steven G. “New applications and emerging contaminants : developing silicone passive sampling devices for environmental and novel monitoring applications.” 2014. Web. 16 Feb 2019.

Vancouver:

O'Connell SG. New applications and emerging contaminants : developing silicone passive sampling devices for environmental and novel monitoring applications. [Internet] [Doctoral dissertation]. Oregon State University; 2014. [cited 2019 Feb 16]. Available from: http://hdl.handle.net/1957/47613.

Council of Science Editors:

O'Connell SG. New applications and emerging contaminants : developing silicone passive sampling devices for environmental and novel monitoring applications. [Doctoral Dissertation]. Oregon State University; 2014. Available from: http://hdl.handle.net/1957/47613

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