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You searched for subject:(Silicon substrate). Showing records 1 – 30 of 47 total matches.

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Penn State University

1. Gagnon, Jarod Christopher. MOCVD growth of GaN on Si through novel substrate modification techniques.

Degree: PhD, Materials Science and Engineering, 2014, Penn State University

 GaN is a semiconductor material with great potential for use in high power electronics and optoelectronics due to the high electron mobility, high breakdown voltage,… (more)

Subjects/Keywords: III/Nitride; MOCVD; Silicon; substrate modification

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APA (6th Edition):

Gagnon, J. C. (2014). MOCVD growth of GaN on Si through novel substrate modification techniques. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/22348

Chicago Manual of Style (16th Edition):

Gagnon, Jarod Christopher. “MOCVD growth of GaN on Si through novel substrate modification techniques.” 2014. Doctoral Dissertation, Penn State University. Accessed October 21, 2019. https://etda.libraries.psu.edu/catalog/22348.

MLA Handbook (7th Edition):

Gagnon, Jarod Christopher. “MOCVD growth of GaN on Si through novel substrate modification techniques.” 2014. Web. 21 Oct 2019.

Vancouver:

Gagnon JC. MOCVD growth of GaN on Si through novel substrate modification techniques. [Internet] [Doctoral dissertation]. Penn State University; 2014. [cited 2019 Oct 21]. Available from: https://etda.libraries.psu.edu/catalog/22348.

Council of Science Editors:

Gagnon JC. MOCVD growth of GaN on Si through novel substrate modification techniques. [Doctoral Dissertation]. Penn State University; 2014. Available from: https://etda.libraries.psu.edu/catalog/22348


NSYSU

2. Shen, Yu-An. Fabrication of the complementary electrochromic device on flexible substrate.

Degree: Master, Electrical Engineering, 2015, NSYSU

 In this study, the Polyethylene terephthalate (PET) polymer is chosen as flexible substrate. The flexible transparency electrode is fabricated by depositing silicon dioxide film (SiO2)… (more)

Subjects/Keywords: Complementary electrochromic device; Optical transmittance; Curvature radius; Flexible substrate; Silicon dioxide

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APA (6th Edition):

Shen, Y. (2015). Fabrication of the complementary electrochromic device on flexible substrate. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724115-132746

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Shen, Yu-An. “Fabrication of the complementary electrochromic device on flexible substrate.” 2015. Thesis, NSYSU. Accessed October 21, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724115-132746.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Shen, Yu-An. “Fabrication of the complementary electrochromic device on flexible substrate.” 2015. Web. 21 Oct 2019.

Vancouver:

Shen Y. Fabrication of the complementary electrochromic device on flexible substrate. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Oct 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724115-132746.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Shen Y. Fabrication of the complementary electrochromic device on flexible substrate. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724115-132746

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New South Wales

3. Wang, Lu. Development of a high performance ultra-thin silicon solar cell on steel substrate.

Degree: Photovoltaics & Renewable Energy Engineering, 2014, University of New South Wales

 This thesis addresses the design and development of a ~20 um mono-crystalline silicon solar cell on a robust and conductive substrate. The thin silicon of… (more)

Subjects/Keywords: steel substrate; Ultra-thin silicon; solar cells; high performance

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APA (6th Edition):

Wang, L. (2014). Development of a high performance ultra-thin silicon solar cell on steel substrate. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/54037 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12752/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Wang, Lu. “Development of a high performance ultra-thin silicon solar cell on steel substrate.” 2014. Doctoral Dissertation, University of New South Wales. Accessed October 21, 2019. http://handle.unsw.edu.au/1959.4/54037 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12752/SOURCE02?view=true.

MLA Handbook (7th Edition):

Wang, Lu. “Development of a high performance ultra-thin silicon solar cell on steel substrate.” 2014. Web. 21 Oct 2019.

Vancouver:

Wang L. Development of a high performance ultra-thin silicon solar cell on steel substrate. [Internet] [Doctoral dissertation]. University of New South Wales; 2014. [cited 2019 Oct 21]. Available from: http://handle.unsw.edu.au/1959.4/54037 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12752/SOURCE02?view=true.

Council of Science Editors:

Wang L. Development of a high performance ultra-thin silicon solar cell on steel substrate. [Doctoral Dissertation]. University of New South Wales; 2014. Available from: http://handle.unsw.edu.au/1959.4/54037 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12752/SOURCE02?view=true


University of Waterloo

4. Fathi, Ehsanollah. Thin Film Solar Cells on Transparent Plastic Foils.

Degree: 2011, University of Waterloo

 The focus of this thesis is on the optimization and fabrication of p-i-n amorphous silicon (a-Si:H) solar cells both on glass and transparent plastic substrates.… (more)

Subjects/Keywords: solar cell; plastic substrate; amorphous silicon; semi-transparent solar cell

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APA (6th Edition):

Fathi, E. (2011). Thin Film Solar Cells on Transparent Plastic Foils. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/5952

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Fathi, Ehsanollah. “Thin Film Solar Cells on Transparent Plastic Foils.” 2011. Thesis, University of Waterloo. Accessed October 21, 2019. http://hdl.handle.net/10012/5952.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Fathi, Ehsanollah. “Thin Film Solar Cells on Transparent Plastic Foils.” 2011. Web. 21 Oct 2019.

Vancouver:

Fathi E. Thin Film Solar Cells on Transparent Plastic Foils. [Internet] [Thesis]. University of Waterloo; 2011. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10012/5952.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Fathi E. Thin Film Solar Cells on Transparent Plastic Foils. [Thesis]. University of Waterloo; 2011. Available from: http://hdl.handle.net/10012/5952

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

5. Comeau, Jonathan P. Integration Issues Associated with Monolithic Silicon-Germanium Microwave Radar Systems.

Degree: PhD, Electrical and Computer Engineering, 2006, Georgia Tech

 Active electronically scanned array (AESA) radar systems for military and commercial applications have fueled interest in low-cost, high-performance technologies capable of delivering integrated circuits for… (more)

Subjects/Keywords: Silicon-germanium; Radar; Circuits; Substrate coupling

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APA (6th Edition):

Comeau, J. P. (2006). Integration Issues Associated with Monolithic Silicon-Germanium Microwave Radar Systems. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/13990

Chicago Manual of Style (16th Edition):

Comeau, Jonathan P. “Integration Issues Associated with Monolithic Silicon-Germanium Microwave Radar Systems.” 2006. Doctoral Dissertation, Georgia Tech. Accessed October 21, 2019. http://hdl.handle.net/1853/13990.

MLA Handbook (7th Edition):

Comeau, Jonathan P. “Integration Issues Associated with Monolithic Silicon-Germanium Microwave Radar Systems.” 2006. Web. 21 Oct 2019.

Vancouver:

Comeau JP. Integration Issues Associated with Monolithic Silicon-Germanium Microwave Radar Systems. [Internet] [Doctoral dissertation]. Georgia Tech; 2006. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/1853/13990.

Council of Science Editors:

Comeau JP. Integration Issues Associated with Monolithic Silicon-Germanium Microwave Radar Systems. [Doctoral Dissertation]. Georgia Tech; 2006. Available from: http://hdl.handle.net/1853/13990


University of New South Wales

6. Lin, Ziyun. Vertically structured Silicon quantum dot solar cell based on Molybdenum conductive contact substrate.

Degree: Photovoltaics & Renewable Energy Engineering, 2015, University of New South Wales

 Si based quantum dot (QD) tandem cells have been considered as promising structures to obtain high energy conversion efficiencies through reducing thermalisation losses while still… (more)

Subjects/Keywords: Si based quantum dot (QD) tandem; Silicon quantum dot solar cell; Molybdenum conductive contact substrate

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APA (6th Edition):

Lin, Z. (2015). Vertically structured Silicon quantum dot solar cell based on Molybdenum conductive contact substrate. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/57241 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:42939/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Lin, Ziyun. “Vertically structured Silicon quantum dot solar cell based on Molybdenum conductive contact substrate.” 2015. Doctoral Dissertation, University of New South Wales. Accessed October 21, 2019. http://handle.unsw.edu.au/1959.4/57241 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:42939/SOURCE02?view=true.

MLA Handbook (7th Edition):

Lin, Ziyun. “Vertically structured Silicon quantum dot solar cell based on Molybdenum conductive contact substrate.” 2015. Web. 21 Oct 2019.

Vancouver:

Lin Z. Vertically structured Silicon quantum dot solar cell based on Molybdenum conductive contact substrate. [Internet] [Doctoral dissertation]. University of New South Wales; 2015. [cited 2019 Oct 21]. Available from: http://handle.unsw.edu.au/1959.4/57241 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:42939/SOURCE02?view=true.

Council of Science Editors:

Lin Z. Vertically structured Silicon quantum dot solar cell based on Molybdenum conductive contact substrate. [Doctoral Dissertation]. University of New South Wales; 2015. Available from: http://handle.unsw.edu.au/1959.4/57241 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:42939/SOURCE02?view=true


Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

7. Gerakis, Vasileios Georgios. Μοντελοποίηση θορύβου και διασυνδέσεων διαμέσου πυριτίου (TSV) και μελέτη μεθόδων διάγνωσης βλαβών σε τρισδιάστατα ολοκληρωμένα κυκλώματα στις υψηλές συχνότητες (RF).

Degree: 2019, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

The aim of the present thesis was to study and model the electromagnetic coupling of metal interconnections and integrated inductors through the silicon substrate and… (more)

Subjects/Keywords: Ηλεκτρονική; Αναλογικά ολοκληρωμένα κυκλώματα; Υπόστρωμα πυριτίου; Ηλεκτρομαγνητική ανάλυση; Electronics; Integrated circuits; Silicon substrate; Electromagnetic analysis

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APA (6th Edition):

Gerakis, V. G. (2019). Μοντελοποίηση θορύβου και διασυνδέσεων διαμέσου πυριτίου (TSV) και μελέτη μεθόδων διάγνωσης βλαβών σε τρισδιάστατα ολοκληρωμένα κυκλώματα στις υψηλές συχνότητες (RF). (Thesis). Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Retrieved from http://hdl.handle.net/10442/hedi/46113

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gerakis, Vasileios Georgios. “Μοντελοποίηση θορύβου και διασυνδέσεων διαμέσου πυριτίου (TSV) και μελέτη μεθόδων διάγνωσης βλαβών σε τρισδιάστατα ολοκληρωμένα κυκλώματα στις υψηλές συχνότητες (RF).” 2019. Thesis, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Accessed October 21, 2019. http://hdl.handle.net/10442/hedi/46113.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gerakis, Vasileios Georgios. “Μοντελοποίηση θορύβου και διασυνδέσεων διαμέσου πυριτίου (TSV) και μελέτη μεθόδων διάγνωσης βλαβών σε τρισδιάστατα ολοκληρωμένα κυκλώματα στις υψηλές συχνότητες (RF).” 2019. Web. 21 Oct 2019.

Vancouver:

Gerakis VG. Μοντελοποίηση θορύβου και διασυνδέσεων διαμέσου πυριτίου (TSV) και μελέτη μεθόδων διάγνωσης βλαβών σε τρισδιάστατα ολοκληρωμένα κυκλώματα στις υψηλές συχνότητες (RF). [Internet] [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2019. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10442/hedi/46113.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gerakis VG. Μοντελοποίηση θορύβου και διασυνδέσεων διαμέσου πυριτίου (TSV) και μελέτη μεθόδων διάγνωσης βλαβών σε τρισδιάστατα ολοκληρωμένα κυκλώματα στις υψηλές συχνότητες (RF). [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2019. Available from: http://hdl.handle.net/10442/hedi/46113

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universiteit Utrecht

8. Li, Hongbo. Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD.

Degree: 2007, Universiteit Utrecht

 With the worldwide growing concern about reliable energy supply and the environmental problems of fossil and nuclear energy production, the need for clean and sustainable… (more)

Subjects/Keywords: Natuur- en Sterrenkunde; solar cell; silicon thin film; flexible substrate; multi-junction; Chemical Vapour Deposition; hot-wire; structure defect; substrate roughness; profiling; photogating

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APA (6th Edition):

Li, H. (2007). Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD. (Doctoral Dissertation). Universiteit Utrecht. Retrieved from http://dspace.library.uu.nl:8080/handle/1874/23712

Chicago Manual of Style (16th Edition):

Li, Hongbo. “Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD.” 2007. Doctoral Dissertation, Universiteit Utrecht. Accessed October 21, 2019. http://dspace.library.uu.nl:8080/handle/1874/23712.

MLA Handbook (7th Edition):

Li, Hongbo. “Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD.” 2007. Web. 21 Oct 2019.

Vancouver:

Li H. Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD. [Internet] [Doctoral dissertation]. Universiteit Utrecht; 2007. [cited 2019 Oct 21]. Available from: http://dspace.library.uu.nl:8080/handle/1874/23712.

Council of Science Editors:

Li H. Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD. [Doctoral Dissertation]. Universiteit Utrecht; 2007. Available from: http://dspace.library.uu.nl:8080/handle/1874/23712


NSYSU

9. Chiou, Bo-ching. Numerical study for heat and mass transfer of silicon dioxide layer chemical vapor deposition process in a rectangular chamber.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2005, NSYSU

 This study employed a commercial code FLUENT to simulate a chemical vapor deposition process in a rectangular chamber for deposition of a silicon dioxide layer… (more)

Subjects/Keywords: CVD; rectangular chamber and substrate; silicon dioxide

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APA (6th Edition):

Chiou, B. (2005). Numerical study for heat and mass transfer of silicon dioxide layer chemical vapor deposition process in a rectangular chamber. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0811105-194943

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chiou, Bo-ching. “Numerical study for heat and mass transfer of silicon dioxide layer chemical vapor deposition process in a rectangular chamber.” 2005. Thesis, NSYSU. Accessed October 21, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0811105-194943.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chiou, Bo-ching. “Numerical study for heat and mass transfer of silicon dioxide layer chemical vapor deposition process in a rectangular chamber.” 2005. Web. 21 Oct 2019.

Vancouver:

Chiou B. Numerical study for heat and mass transfer of silicon dioxide layer chemical vapor deposition process in a rectangular chamber. [Internet] [Thesis]. NSYSU; 2005. [cited 2019 Oct 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0811105-194943.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chiou B. Numerical study for heat and mass transfer of silicon dioxide layer chemical vapor deposition process in a rectangular chamber. [Thesis]. NSYSU; 2005. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0811105-194943

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Ohio University

10. Willis, Jim. Dependence of piezoelectric response in gallium nitride films on silicon substrate type.

Degree: MS, Chemical Engineering (Engineering), 1999, Ohio University

Dependence of piezoelectric response in gallium nitride films on silicon substrate type Advisors/Committee Members: Gulino, Daniel (Advisor).

Subjects/Keywords: Engineering, Chemical; piezoelectric; gallium nitride; silicon substrate

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APA (6th Edition):

Willis, J. (1999). Dependence of piezoelectric response in gallium nitride films on silicon substrate type. (Masters Thesis). Ohio University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175274577

Chicago Manual of Style (16th Edition):

Willis, Jim. “Dependence of piezoelectric response in gallium nitride films on silicon substrate type.” 1999. Masters Thesis, Ohio University. Accessed October 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175274577.

MLA Handbook (7th Edition):

Willis, Jim. “Dependence of piezoelectric response in gallium nitride films on silicon substrate type.” 1999. Web. 21 Oct 2019.

Vancouver:

Willis J. Dependence of piezoelectric response in gallium nitride films on silicon substrate type. [Internet] [Masters thesis]. Ohio University; 1999. [cited 2019 Oct 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175274577.

Council of Science Editors:

Willis J. Dependence of piezoelectric response in gallium nitride films on silicon substrate type. [Masters Thesis]. Ohio University; 1999. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175274577

11. Dridi, Hamida. Méthodologies pour la réalisation d'un substrat SERS à base de silicium poreux pour la détection de molécules chimiques et biologiques : Methodologies used for realization SERS substrate based on porous silicon for chemical and biological molecules detection.

Degree: Docteur es, Physique, 2015, Rennes 1; Université de Tunis El Manar

Le travail de cette thèse porte sur la réalisation de substrats SERS (Surface Enhanced Raman Scattering) pour la détection d'espèce chimiques et biologiques. Il s'agit… (more)

Subjects/Keywords: Raman spectroscopie; Substrat SERS; Silicium poreux; Rugosité; Nanoparticules d'or; Bio-Détection; Raman spectroscopy; SERS substrate; Porous silicon; Gold nanoparticles; Bio-Detection

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APA (6th Edition):

Dridi, H. (2015). Méthodologies pour la réalisation d'un substrat SERS à base de silicium poreux pour la détection de molécules chimiques et biologiques : Methodologies used for realization SERS substrate based on porous silicon for chemical and biological molecules detection. (Doctoral Dissertation). Rennes 1; Université de Tunis El Manar. Retrieved from http://www.theses.fr/2015REN1S012

Chicago Manual of Style (16th Edition):

Dridi, Hamida. “Méthodologies pour la réalisation d'un substrat SERS à base de silicium poreux pour la détection de molécules chimiques et biologiques : Methodologies used for realization SERS substrate based on porous silicon for chemical and biological molecules detection.” 2015. Doctoral Dissertation, Rennes 1; Université de Tunis El Manar. Accessed October 21, 2019. http://www.theses.fr/2015REN1S012.

MLA Handbook (7th Edition):

Dridi, Hamida. “Méthodologies pour la réalisation d'un substrat SERS à base de silicium poreux pour la détection de molécules chimiques et biologiques : Methodologies used for realization SERS substrate based on porous silicon for chemical and biological molecules detection.” 2015. Web. 21 Oct 2019.

Vancouver:

Dridi H. Méthodologies pour la réalisation d'un substrat SERS à base de silicium poreux pour la détection de molécules chimiques et biologiques : Methodologies used for realization SERS substrate based on porous silicon for chemical and biological molecules detection. [Internet] [Doctoral dissertation]. Rennes 1; Université de Tunis El Manar; 2015. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2015REN1S012.

Council of Science Editors:

Dridi H. Méthodologies pour la réalisation d'un substrat SERS à base de silicium poreux pour la détection de molécules chimiques et biologiques : Methodologies used for realization SERS substrate based on porous silicon for chemical and biological molecules detection. [Doctoral Dissertation]. Rennes 1; Université de Tunis El Manar; 2015. Available from: http://www.theses.fr/2015REN1S012


University of South Carolina

12. Islam, Mohammad Mirwazul. Engineering Model Of III-Nitride Power Heterostructure Field Effect Transistor On Silicon Substrate.

Degree: PhD, Electrical Engineering, 2016, University of South Carolina

  In modern society, the demand for power consumption is increasing rapidly and the need of energy savings is now an issue of global importance.… (more)

Subjects/Keywords: Electrical and Computer Engineering; Electrical and Electronics; Engineering; Engineering Model; III-Nitride Power; Heterostructure; Field Effect Transistor; Silicon Substrate

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APA (6th Edition):

Islam, M. M. (2016). Engineering Model Of III-Nitride Power Heterostructure Field Effect Transistor On Silicon Substrate. (Doctoral Dissertation). University of South Carolina. Retrieved from https://scholarcommons.sc.edu/etd/3931

Chicago Manual of Style (16th Edition):

Islam, Mohammad Mirwazul. “Engineering Model Of III-Nitride Power Heterostructure Field Effect Transistor On Silicon Substrate.” 2016. Doctoral Dissertation, University of South Carolina. Accessed October 21, 2019. https://scholarcommons.sc.edu/etd/3931.

MLA Handbook (7th Edition):

Islam, Mohammad Mirwazul. “Engineering Model Of III-Nitride Power Heterostructure Field Effect Transistor On Silicon Substrate.” 2016. Web. 21 Oct 2019.

Vancouver:

Islam MM. Engineering Model Of III-Nitride Power Heterostructure Field Effect Transistor On Silicon Substrate. [Internet] [Doctoral dissertation]. University of South Carolina; 2016. [cited 2019 Oct 21]. Available from: https://scholarcommons.sc.edu/etd/3931.

Council of Science Editors:

Islam MM. Engineering Model Of III-Nitride Power Heterostructure Field Effect Transistor On Silicon Substrate. [Doctoral Dissertation]. University of South Carolina; 2016. Available from: https://scholarcommons.sc.edu/etd/3931


North Carolina State University

13. Rawdanowicz, Thomas Adolph. Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon.

Degree: PhD, Materials Science and Engineering, 2006, North Carolina State University

 The principal goal of this research was the investigation and process development of epitaxial growth mechanisms for the direct depositions of heteroepitaxial GaN thin films… (more)

Subjects/Keywords: Silicon substrate; Si(111) heteroepitaxy; Laser MBE; GaN; AlN

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APA (6th Edition):

Rawdanowicz, T. A. (2006). Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5925

Chicago Manual of Style (16th Edition):

Rawdanowicz, Thomas Adolph. “Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon.” 2006. Doctoral Dissertation, North Carolina State University. Accessed October 21, 2019. http://www.lib.ncsu.edu/resolver/1840.16/5925.

MLA Handbook (7th Edition):

Rawdanowicz, Thomas Adolph. “Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon.” 2006. Web. 21 Oct 2019.

Vancouver:

Rawdanowicz TA. Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2019 Oct 21]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5925.

Council of Science Editors:

Rawdanowicz TA. Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5925


University of Texas – Austin

14. -3816-9859. Considerations in conducting adhesion experiments via nanoindentation.

Degree: MSin Engineering, Engineering Mechanics, 2017, University of Texas – Austin

 Recent attempts to commercialize graphene-based technology for flexible electronics applications have largely failed due to a lack of scalable, cost effective graphene transfer options. Dry… (more)

Subjects/Keywords: Nanoindentation; Graphene; Adhesion; Hysitron; Graphene transfer; Graphene-substrate interfaces; Graphene-based technology; Adhesion interactions; Diamond probe-silicon interactions; Adhesive snap-behavior

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APA (6th Edition):

-3816-9859. (2017). Considerations in conducting adhesion experiments via nanoindentation. (Masters Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/65987

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-3816-9859. “Considerations in conducting adhesion experiments via nanoindentation.” 2017. Masters Thesis, University of Texas – Austin. Accessed October 21, 2019. http://hdl.handle.net/2152/65987.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-3816-9859. “Considerations in conducting adhesion experiments via nanoindentation.” 2017. Web. 21 Oct 2019.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-3816-9859. Considerations in conducting adhesion experiments via nanoindentation. [Internet] [Masters thesis]. University of Texas – Austin; 2017. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/2152/65987.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-3816-9859. Considerations in conducting adhesion experiments via nanoindentation. [Masters Thesis]. University of Texas – Austin; 2017. Available from: http://hdl.handle.net/2152/65987

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


Purdue University

15. Lee, Heui Chang. Device design factors for enhancing the functionality of chronic intracortical microelectrodes.

Degree: PhD, Biomedical Engineering, 2016, Purdue University

  Intracortical microelectrodes are devices used in brain-computer interfaces (BCI) to help regain lost motor, sensory, and cognitive functions of individuals with neurological disorders. However,… (more)

Subjects/Keywords: Applied sciences; Flexible substrate; Foreign body response; Neural interface; Silicon microelectrode; Single unit recording; Biomedical Engineering and Bioengineering

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APA (6th Edition):

Lee, H. C. (2016). Device design factors for enhancing the functionality of chronic intracortical microelectrodes. (Doctoral Dissertation). Purdue University. Retrieved from https://docs.lib.purdue.edu/open_access_dissertations/963

Chicago Manual of Style (16th Edition):

Lee, Heui Chang. “Device design factors for enhancing the functionality of chronic intracortical microelectrodes.” 2016. Doctoral Dissertation, Purdue University. Accessed October 21, 2019. https://docs.lib.purdue.edu/open_access_dissertations/963.

MLA Handbook (7th Edition):

Lee, Heui Chang. “Device design factors for enhancing the functionality of chronic intracortical microelectrodes.” 2016. Web. 21 Oct 2019.

Vancouver:

Lee HC. Device design factors for enhancing the functionality of chronic intracortical microelectrodes. [Internet] [Doctoral dissertation]. Purdue University; 2016. [cited 2019 Oct 21]. Available from: https://docs.lib.purdue.edu/open_access_dissertations/963.

Council of Science Editors:

Lee HC. Device design factors for enhancing the functionality of chronic intracortical microelectrodes. [Doctoral Dissertation]. Purdue University; 2016. Available from: https://docs.lib.purdue.edu/open_access_dissertations/963


University of Florida

16. Wang, Mingliang. Integrated Power Inductors in Silicon for Compact DC-DC Converters in Portable Electronics.

Degree: PhD, Electrical and Computer Engineering, 2010, University of Florida

 Integrated Power Inductor in Silicon for DC-DC Converters in Portable Electronics Candidate's name: MINGLIANG WANG Phone number: 352-392-1049 Department: Electrical and Computer Engineering Supervisory chair:… (more)

Subjects/Keywords: Electric current; Electroplating; Inductance; Inductors; Magnetic cores; Magnetic materials; Magnetism; Magnets; Polymers; Silicon; converter, inductor, integrated, mems, molding, packaging, power, silicon, substrate

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APA (6th Edition):

Wang, M. (2010). Integrated Power Inductors in Silicon for Compact DC-DC Converters in Portable Electronics. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0041226

Chicago Manual of Style (16th Edition):

Wang, Mingliang. “Integrated Power Inductors in Silicon for Compact DC-DC Converters in Portable Electronics.” 2010. Doctoral Dissertation, University of Florida. Accessed October 21, 2019. http://ufdc.ufl.edu/UFE0041226.

MLA Handbook (7th Edition):

Wang, Mingliang. “Integrated Power Inductors in Silicon for Compact DC-DC Converters in Portable Electronics.” 2010. Web. 21 Oct 2019.

Vancouver:

Wang M. Integrated Power Inductors in Silicon for Compact DC-DC Converters in Portable Electronics. [Internet] [Doctoral dissertation]. University of Florida; 2010. [cited 2019 Oct 21]. Available from: http://ufdc.ufl.edu/UFE0041226.

Council of Science Editors:

Wang M. Integrated Power Inductors in Silicon for Compact DC-DC Converters in Portable Electronics. [Doctoral Dissertation]. University of Florida; 2010. Available from: http://ufdc.ufl.edu/UFE0041226


Delft University of Technology

17. van Zeijl, H.W. Bipolar Transistors with Self-Aligned Emitter-Base Metallization and Back-Wafer-Aligned Collector Contacts.

Degree: 2005, Delft University of Technology

Subjects/Keywords: silicon nitride spacers; bipolar transistors; metallization; optical lithography; front-wafer to back-wafer overlay; substrate transfer; substrate distortion; silicon-on-insulator

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APA (6th Edition):

van Zeijl, H. W. (2005). Bipolar Transistors with Self-Aligned Emitter-Base Metallization and Back-Wafer-Aligned Collector Contacts. (Doctoral Dissertation). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd

Chicago Manual of Style (16th Edition):

van Zeijl, H W. “Bipolar Transistors with Self-Aligned Emitter-Base Metallization and Back-Wafer-Aligned Collector Contacts.” 2005. Doctoral Dissertation, Delft University of Technology. Accessed October 21, 2019. http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd.

MLA Handbook (7th Edition):

van Zeijl, H W. “Bipolar Transistors with Self-Aligned Emitter-Base Metallization and Back-Wafer-Aligned Collector Contacts.” 2005. Web. 21 Oct 2019.

Vancouver:

van Zeijl HW. Bipolar Transistors with Self-Aligned Emitter-Base Metallization and Back-Wafer-Aligned Collector Contacts. [Internet] [Doctoral dissertation]. Delft University of Technology; 2005. [cited 2019 Oct 21]. Available from: http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd.

Council of Science Editors:

van Zeijl HW. Bipolar Transistors with Self-Aligned Emitter-Base Metallization and Back-Wafer-Aligned Collector Contacts. [Doctoral Dissertation]. Delft University of Technology; 2005. Available from: http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd


Université de Grenoble

18. Eid, Elie. Caractérisation et modélisation électrique des phénomènes de couplage par les substrats de silicium dans les empilements 3D de circuits intègrés : Characterization and modelling of the coupling effects by the substrates in the stackings up of the 3D integrated circuits.

Degree: Docteur es, Sciences et technologie industrielles, 2012, Université de Grenoble

Afin d’améliorer les performances électriques dans les circuits intégrés en 3D, une large modélisation électromagnétique et une caractérisation haute fréquence sont requises. Cela a pour… (more)

Subjects/Keywords: Intégration 3D; Substrat en Silicium; Through Silicon Vias (TSV); Caractérisation; Modélisation; Haute fréquence; Couplage capacitif; Conductif et inductif; 3D integration; Silicon substrate; Through Silicon Vias (TSV); Characterization; Modeling; High frequency; Capacitive; Conductive and inductive coupling

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APA (6th Edition):

Eid, E. (2012). Caractérisation et modélisation électrique des phénomènes de couplage par les substrats de silicium dans les empilements 3D de circuits intègrés : Characterization and modelling of the coupling effects by the substrates in the stackings up of the 3D integrated circuits. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2012GRENT021

Chicago Manual of Style (16th Edition):

Eid, Elie. “Caractérisation et modélisation électrique des phénomènes de couplage par les substrats de silicium dans les empilements 3D de circuits intègrés : Characterization and modelling of the coupling effects by the substrates in the stackings up of the 3D integrated circuits.” 2012. Doctoral Dissertation, Université de Grenoble. Accessed October 21, 2019. http://www.theses.fr/2012GRENT021.

MLA Handbook (7th Edition):

Eid, Elie. “Caractérisation et modélisation électrique des phénomènes de couplage par les substrats de silicium dans les empilements 3D de circuits intègrés : Characterization and modelling of the coupling effects by the substrates in the stackings up of the 3D integrated circuits.” 2012. Web. 21 Oct 2019.

Vancouver:

Eid E. Caractérisation et modélisation électrique des phénomènes de couplage par les substrats de silicium dans les empilements 3D de circuits intègrés : Characterization and modelling of the coupling effects by the substrates in the stackings up of the 3D integrated circuits. [Internet] [Doctoral dissertation]. Université de Grenoble; 2012. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2012GRENT021.

Council of Science Editors:

Eid E. Caractérisation et modélisation électrique des phénomènes de couplage par les substrats de silicium dans les empilements 3D de circuits intègrés : Characterization and modelling of the coupling effects by the substrates in the stackings up of the 3D integrated circuits. [Doctoral Dissertation]. Université de Grenoble; 2012. Available from: http://www.theses.fr/2012GRENT021


University of Kentucky

19. Hu, Wenchong. FABRICATION OF VERTICALLY ALIGNED CARBON NANOTUBES AND HORIZONTAL NANO-STRUCTURES.

Degree: 2002, University of Kentucky

 Fabrication of ordered anodic alumina nanopore arrays and anodization parameters including electrolyte, concentration, voltage, temperature and time have been investigated. Cobalt nanoparticles were electrodeposited at… (more)

Subjects/Keywords: Carbon Nanotube; Porous Alumina Film; Flame Synthesis; Silicon Substrate; Shadow Mask

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APA (6th Edition):

Hu, W. (2002). FABRICATION OF VERTICALLY ALIGNED CARBON NANOTUBES AND HORIZONTAL NANO-STRUCTURES. (Masters Thesis). University of Kentucky. Retrieved from http://uknowledge.uky.edu/gradschool_theses/241

Chicago Manual of Style (16th Edition):

Hu, Wenchong. “FABRICATION OF VERTICALLY ALIGNED CARBON NANOTUBES AND HORIZONTAL NANO-STRUCTURES.” 2002. Masters Thesis, University of Kentucky. Accessed October 21, 2019. http://uknowledge.uky.edu/gradschool_theses/241.

MLA Handbook (7th Edition):

Hu, Wenchong. “FABRICATION OF VERTICALLY ALIGNED CARBON NANOTUBES AND HORIZONTAL NANO-STRUCTURES.” 2002. Web. 21 Oct 2019.

Vancouver:

Hu W. FABRICATION OF VERTICALLY ALIGNED CARBON NANOTUBES AND HORIZONTAL NANO-STRUCTURES. [Internet] [Masters thesis]. University of Kentucky; 2002. [cited 2019 Oct 21]. Available from: http://uknowledge.uky.edu/gradschool_theses/241.

Council of Science Editors:

Hu W. FABRICATION OF VERTICALLY ALIGNED CARBON NANOTUBES AND HORIZONTAL NANO-STRUCTURES. [Masters Thesis]. University of Kentucky; 2002. Available from: http://uknowledge.uky.edu/gradschool_theses/241


Université de Grenoble

20. Brocard, Mélanie. Caractérisation et analyse du couplage substrat entre le TSV et les transistors MOS dans les circuits intégrés 3D. : Caracterization and analysis of substrate coupling between TSV and transistors in 3D integrated circuits.

Degree: Docteur es, Sciences et technologie industrielles, 2013, Université de Grenoble

Ces dernières années ont vu l'émergence d'un nouveaux concept dans le domaine de la microélectronique pour répondre aux besoins grandissant en termes de performances et… (more)

Subjects/Keywords: Vias traversant le silicium (TSV); Circuit intégrés 3D; Couplage substrat; Modélisation électrique; Simulation électriques; Transistors MOS; Through silicon via (TSV); 3D integrated circuits; Substrate coupling; Modeling; Electrical simulation; MOS transistors

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APA (6th Edition):

Brocard, M. (2013). Caractérisation et analyse du couplage substrat entre le TSV et les transistors MOS dans les circuits intégrés 3D. : Caracterization and analysis of substrate coupling between TSV and transistors in 3D integrated circuits. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2013GRENT049

Chicago Manual of Style (16th Edition):

Brocard, Mélanie. “Caractérisation et analyse du couplage substrat entre le TSV et les transistors MOS dans les circuits intégrés 3D. : Caracterization and analysis of substrate coupling between TSV and transistors in 3D integrated circuits.” 2013. Doctoral Dissertation, Université de Grenoble. Accessed October 21, 2019. http://www.theses.fr/2013GRENT049.

MLA Handbook (7th Edition):

Brocard, Mélanie. “Caractérisation et analyse du couplage substrat entre le TSV et les transistors MOS dans les circuits intégrés 3D. : Caracterization and analysis of substrate coupling between TSV and transistors in 3D integrated circuits.” 2013. Web. 21 Oct 2019.

Vancouver:

Brocard M. Caractérisation et analyse du couplage substrat entre le TSV et les transistors MOS dans les circuits intégrés 3D. : Caracterization and analysis of substrate coupling between TSV and transistors in 3D integrated circuits. [Internet] [Doctoral dissertation]. Université de Grenoble; 2013. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2013GRENT049.

Council of Science Editors:

Brocard M. Caractérisation et analyse du couplage substrat entre le TSV et les transistors MOS dans les circuits intégrés 3D. : Caracterization and analysis of substrate coupling between TSV and transistors in 3D integrated circuits. [Doctoral Dissertation]. Université de Grenoble; 2013. Available from: http://www.theses.fr/2013GRENT049

21. Billaud, Mathilde. Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité : III-V semiconductor integration on Silicon substrate for high-mobility n-MOSFET transistors.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2017, Grenoble Alpes

La substitution du canal de silicium par un semi-conducteur III-V est une des voies envisagées pour accroitre la mobilité des électrons dans les transistors n-MOSFET… (more)

Subjects/Keywords: Semi-Conducteurs III-V; N-Mosfet; Substrat silicium; Capacité MOS; Densité d’états d’interface; InGaAs; III-V semiconductors; N-Mosfet; Silicon substrate; MOS capacitor; Interface states density; InGaAs; 620

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APA (6th Edition):

Billaud, M. (2017). Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité : III-V semiconductor integration on Silicon substrate for high-mobility n-MOSFET transistors. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2017GREAT010

Chicago Manual of Style (16th Edition):

Billaud, Mathilde. “Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité : III-V semiconductor integration on Silicon substrate for high-mobility n-MOSFET transistors.” 2017. Doctoral Dissertation, Grenoble Alpes. Accessed October 21, 2019. http://www.theses.fr/2017GREAT010.

MLA Handbook (7th Edition):

Billaud, Mathilde. “Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité : III-V semiconductor integration on Silicon substrate for high-mobility n-MOSFET transistors.” 2017. Web. 21 Oct 2019.

Vancouver:

Billaud M. Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité : III-V semiconductor integration on Silicon substrate for high-mobility n-MOSFET transistors. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2017. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2017GREAT010.

Council of Science Editors:

Billaud M. Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité : III-V semiconductor integration on Silicon substrate for high-mobility n-MOSFET transistors. [Doctoral Dissertation]. Grenoble Alpes; 2017. Available from: http://www.theses.fr/2017GREAT010


University of Houston

22. Wang, Renjie 1988-. Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering.

Degree: Mechanical Engineering, Department of, University of Houston

 High mobility single-crystalline-like Ge thin films have been demonstrated on inexpensive polycrystalline metallic substrates buffered with oxide buffer layer. Doped films of p-type and n-type… (more)

Subjects/Keywords: Epitaxial Growth; Silicon; Germanium; Flexible Substrate; Sputter; Mobility; Solar Energy

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APA (6th Edition):

Wang, R. 1. (n.d.). Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering. (Thesis). University of Houston. Retrieved from http://hdl.handle.net/10657/2182

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Renjie 1988-. “Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering.” Thesis, University of Houston. Accessed October 21, 2019. http://hdl.handle.net/10657/2182.

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Renjie 1988-. “Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering.” Web. 21 Oct 2019.

Note: this citation may be lacking information needed for this citation format:
No year of publication.

Vancouver:

Wang R1. Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering. [Internet] [Thesis]. University of Houston; [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10657/2182.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

Council of Science Editors:

Wang R1. Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering. [Thesis]. University of Houston; Available from: http://hdl.handle.net/10657/2182

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.


Brno University of Technology

23. Frantík, Ondřej. Omezení defektů v Si substrátech metodou rychlých tepelných procesů .

Degree: 2010, Brno University of Technology

 Nízká cena, rychlé dosažení vysokých teplot IR ohřevem, rychlé chlazení a vysoká efektivita, to jsou vlastnosti RTP (rychlé tepelné procesy). RTP se využívá pro žíhání,… (more)

Subjects/Keywords: Rychlé tepelné procesy; rychlé tepelné žíhání; doba života minoritních nosičů; křemík; křemíkové substráty.; Rapid Thermal Process; Rapid Thermal Annealing; Minority carrier lifetime; Silicon; Si substrate.

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APA (6th Edition):

Frantík, O. (2010). Omezení defektů v Si substrátech metodou rychlých tepelných procesů . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/17123

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Frantík, Ondřej. “Omezení defektů v Si substrátech metodou rychlých tepelných procesů .” 2010. Thesis, Brno University of Technology. Accessed October 21, 2019. http://hdl.handle.net/11012/17123.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Frantík, Ondřej. “Omezení defektů v Si substrátech metodou rychlých tepelných procesů .” 2010. Web. 21 Oct 2019.

Vancouver:

Frantík O. Omezení defektů v Si substrátech metodou rychlých tepelných procesů . [Internet] [Thesis]. Brno University of Technology; 2010. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/11012/17123.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Frantík O. Omezení defektů v Si substrátech metodou rychlých tepelných procesů . [Thesis]. Brno University of Technology; 2010. Available from: http://hdl.handle.net/11012/17123

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

24. Quignon, Sébastien. Synthèse et caractérisations de couches minces de matériaux piézoélectriques sans plomb : Synthesis and characterisations of lead-free piezoelectric thin films.

Degree: Docteur es, Électronique. Micro et nano technologie, 2013, Valenciennes

Intérêt industriel, pression politique : deux raisons majeures pour lesquelles la synthèse de couches minces piézoélectriques sans Plomb performantes est devenue un sujet de recherche… (more)

Subjects/Keywords: Sans-plomb; Piézoélectrique; Diélectrique; Ferroélectrique; Couches minces; Pulvérisation cathodique; Pérovskite; Substrats; Silicium; Lead-free; Piezoelectric; Dielectric; Ferroelectric; Thin films; Sputtering; Perovskite; Substrate; Silicon

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APA (6th Edition):

Quignon, S. (2013). Synthèse et caractérisations de couches minces de matériaux piézoélectriques sans plomb : Synthesis and characterisations of lead-free piezoelectric thin films. (Doctoral Dissertation). Valenciennes. Retrieved from http://www.theses.fr/2013VALE0038

Chicago Manual of Style (16th Edition):

Quignon, Sébastien. “Synthèse et caractérisations de couches minces de matériaux piézoélectriques sans plomb : Synthesis and characterisations of lead-free piezoelectric thin films.” 2013. Doctoral Dissertation, Valenciennes. Accessed October 21, 2019. http://www.theses.fr/2013VALE0038.

MLA Handbook (7th Edition):

Quignon, Sébastien. “Synthèse et caractérisations de couches minces de matériaux piézoélectriques sans plomb : Synthesis and characterisations of lead-free piezoelectric thin films.” 2013. Web. 21 Oct 2019.

Vancouver:

Quignon S. Synthèse et caractérisations de couches minces de matériaux piézoélectriques sans plomb : Synthesis and characterisations of lead-free piezoelectric thin films. [Internet] [Doctoral dissertation]. Valenciennes; 2013. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2013VALE0038.

Council of Science Editors:

Quignon S. Synthèse et caractérisations de couches minces de matériaux piézoélectriques sans plomb : Synthesis and characterisations of lead-free piezoelectric thin films. [Doctoral Dissertation]. Valenciennes; 2013. Available from: http://www.theses.fr/2013VALE0038

25. Ajagunna, Adebowale Olufunso. Heteroepitaxy of InN on silicon (111) and r-plane sapphire substrates.

Degree: 2011, University of Crete (UOC); Πανεπιστήμιο Κρήτης

 Among the group-III nitride (III-N) semiconductors, InN has been the leaststudied and also the most complex. However, InN is a promising material for sub-THz electronic… (more)

Subjects/Keywords: Επίταξη με μοριακές δέσμες; Ημιαγωγοί III-V; Νιτρίδιο ινδίου (InN); Περιθλασιμετρία ακτίνων - Χ; Υπόστρωμα πυριτίου; Υπόστρωμα σαπφείρου; Επιταξιακή ανάπτυξη; Molecular beam epitaxy (MBE); III-V semiconductors; Indium nitride (InN); X-ray diffraction; Silicon substrate; Sapphire substrate; Epitaxial growth

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ajagunna, A. O. (2011). Heteroepitaxy of InN on silicon (111) and r-plane sapphire substrates. (Thesis). University of Crete (UOC); Πανεπιστήμιο Κρήτης. Retrieved from http://hdl.handle.net/10442/hedi/30141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ajagunna, Adebowale Olufunso. “Heteroepitaxy of InN on silicon (111) and r-plane sapphire substrates.” 2011. Thesis, University of Crete (UOC); Πανεπιστήμιο Κρήτης. Accessed October 21, 2019. http://hdl.handle.net/10442/hedi/30141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ajagunna, Adebowale Olufunso. “Heteroepitaxy of InN on silicon (111) and r-plane sapphire substrates.” 2011. Web. 21 Oct 2019.

Vancouver:

Ajagunna AO. Heteroepitaxy of InN on silicon (111) and r-plane sapphire substrates. [Internet] [Thesis]. University of Crete (UOC); Πανεπιστήμιο Κρήτης; 2011. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10442/hedi/30141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ajagunna AO. Heteroepitaxy of InN on silicon (111) and r-plane sapphire substrates. [Thesis]. University of Crete (UOC); Πανεπιστήμιο Κρήτης; 2011. Available from: http://hdl.handle.net/10442/hedi/30141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

26. Li, Hongbo. Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD.

Degree: 2007, University Utrecht

 With the worldwide growing concern about reliable energy supply and the environmental problems of fossil and nuclear energy production, the need for clean and sustainable… (more)

Subjects/Keywords: solar cell; silicon thin film; flexible substrate; multi-junction; Chemical Vapour Deposition; hot-wire; structure defect; substrate roughness; profiling; photogating

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, H. (2007). Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD. (Doctoral Dissertation). University Utrecht. Retrieved from http://dspace.library.uu.nl/handle/1874/23712 ; URN:NBN:NL:UI:10-1874-23712 ; urn:isbn:978-90-393-4630-3 ; URN:NBN:NL:UI:10-1874-23712 ; http://dspace.library.uu.nl/handle/1874/23712

Chicago Manual of Style (16th Edition):

Li, Hongbo. “Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD.” 2007. Doctoral Dissertation, University Utrecht. Accessed October 21, 2019. http://dspace.library.uu.nl/handle/1874/23712 ; URN:NBN:NL:UI:10-1874-23712 ; urn:isbn:978-90-393-4630-3 ; URN:NBN:NL:UI:10-1874-23712 ; http://dspace.library.uu.nl/handle/1874/23712.

MLA Handbook (7th Edition):

Li, Hongbo. “Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD.” 2007. Web. 21 Oct 2019.

Vancouver:

Li H. Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD. [Internet] [Doctoral dissertation]. University Utrecht; 2007. [cited 2019 Oct 21]. Available from: http://dspace.library.uu.nl/handle/1874/23712 ; URN:NBN:NL:UI:10-1874-23712 ; urn:isbn:978-90-393-4630-3 ; URN:NBN:NL:UI:10-1874-23712 ; http://dspace.library.uu.nl/handle/1874/23712.

Council of Science Editors:

Li H. Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD. [Doctoral Dissertation]. University Utrecht; 2007. Available from: http://dspace.library.uu.nl/handle/1874/23712 ; URN:NBN:NL:UI:10-1874-23712 ; urn:isbn:978-90-393-4630-3 ; URN:NBN:NL:UI:10-1874-23712 ; http://dspace.library.uu.nl/handle/1874/23712


Indian Institute of Science

27. Mahesh Kumar, *. Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy.

Degree: 2011, Indian Institute of Science

 The present work has been focused on the growth of Group III-nitride epitaxial layers and nanostructures on Si (111) substrates by plasma-assisted molecular beam epitaxy.… (more)

Subjects/Keywords: Molecular Beam Epitaxy (MBE); Nitride Nanostructures; Nitride Epitaxial Layers; Nitrides - Silicon Substrate; Nitride Semiconductors; Gallium Nitride(GaN) Epilayers; Indium Nitride(InN) Epilayers; Nitrides - Epitaxial Growth; Gallium Nitride Nanostructures; Indium Nitride(InN) Nanostructures; Gallium/Indium/Silicon Heterostructures; Quantum Dots; Materials Science

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APA (6th Edition):

Mahesh Kumar, *. (2011). Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2408

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mahesh Kumar, *. “Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy.” 2011. Thesis, Indian Institute of Science. Accessed October 21, 2019. http://hdl.handle.net/2005/2408.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mahesh Kumar, *. “Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy.” 2011. Web. 21 Oct 2019.

Vancouver:

Mahesh Kumar *. Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy. [Internet] [Thesis]. Indian Institute of Science; 2011. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/2005/2408.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mahesh Kumar *. Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy. [Thesis]. Indian Institute of Science; 2011. Available from: http://hdl.handle.net/2005/2408

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

28. Champory, Romain. Cellules solaires silicium ultra-minces nanostructurées : conception électro-optique et développement technologique : New electroactive polymers structures.

Degree: Docteur es, Physique, 2016, Lyon

Les cellules photovoltaïques en couches minces de silicium cristallin sont des candidates prometteuses pour les développements futurs de l’industrie photovoltaïque, au travers des réductions de… (more)

Subjects/Keywords: Cellules solaires; Cellules photovoltaïques; Cellules en couches minces; Couche mince de silicium monocristallin; Electronique; Cristaux photoniques; Texturation; Epitaxie; Lithographie; Soudage aluminium; Collage de substrat; Electronics; Photonic crystals; Texturing; Epitaxy; Silicon etching; Lithography; Aluminum welding; Substrate bonding; Solar cells; Photovoltaic cells; Silicon thin film

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Champory, R. (2016). Cellules solaires silicium ultra-minces nanostructurées : conception électro-optique et développement technologique : New electroactive polymers structures. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2016LYSEC057

Chicago Manual of Style (16th Edition):

Champory, Romain. “Cellules solaires silicium ultra-minces nanostructurées : conception électro-optique et développement technologique : New electroactive polymers structures.” 2016. Doctoral Dissertation, Lyon. Accessed October 21, 2019. http://www.theses.fr/2016LYSEC057.

MLA Handbook (7th Edition):

Champory, Romain. “Cellules solaires silicium ultra-minces nanostructurées : conception électro-optique et développement technologique : New electroactive polymers structures.” 2016. Web. 21 Oct 2019.

Vancouver:

Champory R. Cellules solaires silicium ultra-minces nanostructurées : conception électro-optique et développement technologique : New electroactive polymers structures. [Internet] [Doctoral dissertation]. Lyon; 2016. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2016LYSEC057.

Council of Science Editors:

Champory R. Cellules solaires silicium ultra-minces nanostructurées : conception électro-optique et développement technologique : New electroactive polymers structures. [Doctoral Dissertation]. Lyon; 2016. Available from: http://www.theses.fr/2016LYSEC057


Uppsala University

29. Schönström, Linus; Nordh, Anna; Strignert, Anton; Lemel, Frida; Ekengard, Jakob; Wallin, Sofie. A process recipe for bonding a silicone membrane to a plastic substrate.

Degree: Engineering Sciences, 2013, Uppsala University

  A spin-cast silicone membrane has been successfully bonded between two injection-molded microstructured plastic discs. This sandwich structure creates a useful platform for mass production… (more)

Subjects/Keywords: bonding silicone; corona surface treater; SiO2 coating; thermoplastic substrate; PVD temperature; PDMS membrane; spin-coating; thickness measurements; microfluidic systems; bonding PDMS; silicon dioxide coating; spin-cast; silicone membrane; PDMS; polydimethylsiloxane; poly(dimethylsiloxane); silicon dioxide PVD; SiO2 PVD; silicon dioxide evaporation; SiO2 evaporation; thickness of a thin film; silicon dioxide deposition; SiO2 deposition; adhesion testing; cycloolefincopolymer; cycloolefinpolymer; cyclic olefin copolymer; cyclic olefin polymer; COC; COP; plasma surface treater; surface activator; surface oxidizer

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APA (6th Edition):

Schönström, Linus; Nordh, Anna; Strignert, Anton; Lemel, Frida; Ekengard, Jakob; Wallin, S. (2013). A process recipe for bonding a silicone membrane to a plastic substrate. (Thesis). Uppsala University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-201008

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Schönström, Linus; Nordh, Anna; Strignert, Anton; Lemel, Frida; Ekengard, Jakob; Wallin, Sofie. “A process recipe for bonding a silicone membrane to a plastic substrate.” 2013. Thesis, Uppsala University. Accessed October 21, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-201008.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Schönström, Linus; Nordh, Anna; Strignert, Anton; Lemel, Frida; Ekengard, Jakob; Wallin, Sofie. “A process recipe for bonding a silicone membrane to a plastic substrate.” 2013. Web. 21 Oct 2019.

Vancouver:

Schönström, Linus; Nordh, Anna; Strignert, Anton; Lemel, Frida; Ekengard, Jakob; Wallin S. A process recipe for bonding a silicone membrane to a plastic substrate. [Internet] [Thesis]. Uppsala University; 2013. [cited 2019 Oct 21]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-201008.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Schönström, Linus; Nordh, Anna; Strignert, Anton; Lemel, Frida; Ekengard, Jakob; Wallin S. A process recipe for bonding a silicone membrane to a plastic substrate. [Thesis]. Uppsala University; 2013. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-201008

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Pontifical Catholic University of Rio de Janeiro

30. MARLIN JEANNETTE PEDROZO PEÑAFIEL. [en] DETERMINATION OF SILICON AND ALUMINUM IN CRUDE OIL USING ENERGY DISPERSIVE X-RAY FLUORESCENCE SPECTROMETRY.

Degree: 2018, Pontifical Catholic University of Rio de Janeiro

[pt] A determinação de diferentes níveis de silício e alumínio em petróleo é importante porque pequenas quantidades destes elementos podem produzir efeitos adversos nas refinarias… (more)

Subjects/Keywords: [pt] ALUMINIO; [en] ALUMINUM; [pt] ANALISE DE PETROLEO; [en] PETROLEUM ANALYSIS; [pt] ESPECTROMETRIA DE FLUORESCENCIA DE RAIOS-X POR DISPERSAO DE ENERGIA; [en] ENERGY DISPERSIVE X-RAY FLUORESCENCE SPECTROMETRY; [pt] SILICIO; [en] SILICON; [pt] AMOSTRAGEM NO SUBSTRATO SOLIDO; [en] SOLID SUBSTRATE SAMPLING

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APA (6th Edition):

PEÑAFIEL, M. J. P. (2018). [en] DETERMINATION OF SILICON AND ALUMINUM IN CRUDE OIL USING ENERGY DISPERSIVE X-RAY FLUORESCENCE SPECTROMETRY. (Thesis). Pontifical Catholic University of Rio de Janeiro. Retrieved from http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=33880

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

PEÑAFIEL, MARLIN JEANNETTE PEDROZO. “[en] DETERMINATION OF SILICON AND ALUMINUM IN CRUDE OIL USING ENERGY DISPERSIVE X-RAY FLUORESCENCE SPECTROMETRY.” 2018. Thesis, Pontifical Catholic University of Rio de Janeiro. Accessed October 21, 2019. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=33880.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

PEÑAFIEL, MARLIN JEANNETTE PEDROZO. “[en] DETERMINATION OF SILICON AND ALUMINUM IN CRUDE OIL USING ENERGY DISPERSIVE X-RAY FLUORESCENCE SPECTROMETRY.” 2018. Web. 21 Oct 2019.

Vancouver:

PEÑAFIEL MJP. [en] DETERMINATION OF SILICON AND ALUMINUM IN CRUDE OIL USING ENERGY DISPERSIVE X-RAY FLUORESCENCE SPECTROMETRY. [Internet] [Thesis]. Pontifical Catholic University of Rio de Janeiro; 2018. [cited 2019 Oct 21]. Available from: http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=33880.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

PEÑAFIEL MJP. [en] DETERMINATION OF SILICON AND ALUMINUM IN CRUDE OIL USING ENERGY DISPERSIVE X-RAY FLUORESCENCE SPECTROMETRY. [Thesis]. Pontifical Catholic University of Rio de Janeiro; 2018. Available from: http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=33880

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2]

.