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You searched for subject:(Silicon nitride substrate). Showing records 1 – 8 of 8 total matches.

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Penn State University

1. Gagnon, Jarod Christopher. MOCVD growth of GaN on Si through novel substrate modification techniques.

Degree: PhD, Materials Science and Engineering, 2014, Penn State University

 GaN is a semiconductor material with great potential for use in high power electronics and optoelectronics due to the high electron mobility, high breakdown voltage,… (more)

Subjects/Keywords: III/Nitride; MOCVD; Silicon; substrate modification

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APA (6th Edition):

Gagnon, J. C. (2014). MOCVD growth of GaN on Si through novel substrate modification techniques. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/22348

Chicago Manual of Style (16th Edition):

Gagnon, Jarod Christopher. “MOCVD growth of GaN on Si through novel substrate modification techniques.” 2014. Doctoral Dissertation, Penn State University. Accessed August 25, 2019. https://etda.libraries.psu.edu/catalog/22348.

MLA Handbook (7th Edition):

Gagnon, Jarod Christopher. “MOCVD growth of GaN on Si through novel substrate modification techniques.” 2014. Web. 25 Aug 2019.

Vancouver:

Gagnon JC. MOCVD growth of GaN on Si through novel substrate modification techniques. [Internet] [Doctoral dissertation]. Penn State University; 2014. [cited 2019 Aug 25]. Available from: https://etda.libraries.psu.edu/catalog/22348.

Council of Science Editors:

Gagnon JC. MOCVD growth of GaN on Si through novel substrate modification techniques. [Doctoral Dissertation]. Penn State University; 2014. Available from: https://etda.libraries.psu.edu/catalog/22348


Indian Institute of Science

2. Mahesh Kumar, *. Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy.

Degree: 2011, Indian Institute of Science

 The present work has been focused on the growth of Group III-nitride epitaxial layers and nanostructures on Si (111) substrates by plasma-assisted molecular beam epitaxy.… (more)

Subjects/Keywords: Molecular Beam Epitaxy (MBE); Nitride Nanostructures; Nitride Epitaxial Layers; Nitrides - Silicon Substrate; Nitride Semiconductors; Gallium Nitride(GaN) Epilayers; Indium Nitride(InN) Epilayers; Nitrides - Epitaxial Growth; Gallium Nitride Nanostructures; Indium Nitride(InN) Nanostructures; Gallium/Indium/Silicon Heterostructures; Quantum Dots; Materials Science

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APA (6th Edition):

Mahesh Kumar, *. (2011). Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2408

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mahesh Kumar, *. “Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy.” 2011. Thesis, Indian Institute of Science. Accessed August 25, 2019. http://hdl.handle.net/2005/2408.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mahesh Kumar, *. “Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy.” 2011. Web. 25 Aug 2019.

Vancouver:

Mahesh Kumar *. Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy. [Internet] [Thesis]. Indian Institute of Science; 2011. [cited 2019 Aug 25]. Available from: http://hdl.handle.net/2005/2408.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mahesh Kumar *. Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy. [Thesis]. Indian Institute of Science; 2011. Available from: http://hdl.handle.net/2005/2408

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Ohio University

3. Willis, Jim. Dependence of piezoelectric response in gallium nitride films on silicon substrate type.

Degree: MS, Chemical Engineering (Engineering), 1999, Ohio University

Dependence of piezoelectric response in gallium nitride films on silicon substrate type Advisors/Committee Members: Gulino, Daniel (Advisor).

Subjects/Keywords: Engineering, Chemical; piezoelectric; gallium nitride; silicon substrate

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APA (6th Edition):

Willis, J. (1999). Dependence of piezoelectric response in gallium nitride films on silicon substrate type. (Masters Thesis). Ohio University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175274577

Chicago Manual of Style (16th Edition):

Willis, Jim. “Dependence of piezoelectric response in gallium nitride films on silicon substrate type.” 1999. Masters Thesis, Ohio University. Accessed August 25, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175274577.

MLA Handbook (7th Edition):

Willis, Jim. “Dependence of piezoelectric response in gallium nitride films on silicon substrate type.” 1999. Web. 25 Aug 2019.

Vancouver:

Willis J. Dependence of piezoelectric response in gallium nitride films on silicon substrate type. [Internet] [Masters thesis]. Ohio University; 1999. [cited 2019 Aug 25]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175274577.

Council of Science Editors:

Willis J. Dependence of piezoelectric response in gallium nitride films on silicon substrate type. [Masters Thesis]. Ohio University; 1999. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175274577


University of South Carolina

4. Islam, Mohammad Mirwazul. Engineering Model Of III-Nitride Power Heterostructure Field Effect Transistor On Silicon Substrate.

Degree: PhD, Electrical Engineering, 2016, University of South Carolina

  In modern society, the demand for power consumption is increasing rapidly and the need of energy savings is now an issue of global importance.… (more)

Subjects/Keywords: Electrical and Computer Engineering; Electrical and Electronics; Engineering; Engineering Model; III-Nitride Power; Heterostructure; Field Effect Transistor; Silicon Substrate

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APA (6th Edition):

Islam, M. M. (2016). Engineering Model Of III-Nitride Power Heterostructure Field Effect Transistor On Silicon Substrate. (Doctoral Dissertation). University of South Carolina. Retrieved from https://scholarcommons.sc.edu/etd/3931

Chicago Manual of Style (16th Edition):

Islam, Mohammad Mirwazul. “Engineering Model Of III-Nitride Power Heterostructure Field Effect Transistor On Silicon Substrate.” 2016. Doctoral Dissertation, University of South Carolina. Accessed August 25, 2019. https://scholarcommons.sc.edu/etd/3931.

MLA Handbook (7th Edition):

Islam, Mohammad Mirwazul. “Engineering Model Of III-Nitride Power Heterostructure Field Effect Transistor On Silicon Substrate.” 2016. Web. 25 Aug 2019.

Vancouver:

Islam MM. Engineering Model Of III-Nitride Power Heterostructure Field Effect Transistor On Silicon Substrate. [Internet] [Doctoral dissertation]. University of South Carolina; 2016. [cited 2019 Aug 25]. Available from: https://scholarcommons.sc.edu/etd/3931.

Council of Science Editors:

Islam MM. Engineering Model Of III-Nitride Power Heterostructure Field Effect Transistor On Silicon Substrate. [Doctoral Dissertation]. University of South Carolina; 2016. Available from: https://scholarcommons.sc.edu/etd/3931


Delft University of Technology

5. van Zeijl, H.W. Bipolar Transistors with Self-Aligned Emitter-Base Metallization and Back-Wafer-Aligned Collector Contacts.

Degree: 2005, Delft University of Technology

Subjects/Keywords: silicon nitride spacers; bipolar transistors; metallization; optical lithography; front-wafer to back-wafer overlay; substrate transfer; substrate distortion; silicon-on-insulator

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APA (6th Edition):

van Zeijl, H. W. (2005). Bipolar Transistors with Self-Aligned Emitter-Base Metallization and Back-Wafer-Aligned Collector Contacts. (Doctoral Dissertation). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd

Chicago Manual of Style (16th Edition):

van Zeijl, H W. “Bipolar Transistors with Self-Aligned Emitter-Base Metallization and Back-Wafer-Aligned Collector Contacts.” 2005. Doctoral Dissertation, Delft University of Technology. Accessed August 25, 2019. http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd.

MLA Handbook (7th Edition):

van Zeijl, H W. “Bipolar Transistors with Self-Aligned Emitter-Base Metallization and Back-Wafer-Aligned Collector Contacts.” 2005. Web. 25 Aug 2019.

Vancouver:

van Zeijl HW. Bipolar Transistors with Self-Aligned Emitter-Base Metallization and Back-Wafer-Aligned Collector Contacts. [Internet] [Doctoral dissertation]. Delft University of Technology; 2005. [cited 2019 Aug 25]. Available from: http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd.

Council of Science Editors:

van Zeijl HW. Bipolar Transistors with Self-Aligned Emitter-Base Metallization and Back-Wafer-Aligned Collector Contacts. [Doctoral Dissertation]. Delft University of Technology; 2005. Available from: http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; urn:NBN:nl:ui:24-uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd ; http://resolver.tudelft.nl/uuid:2080c8fc-f763-4a27-b411-7a34b59bedbd

6. Ajagunna, Adebowale Olufunso. Heteroepitaxy of InN on silicon (111) and r-plane sapphire substrates.

Degree: 2011, University of Crete (UOC); Πανεπιστήμιο Κρήτης

 Among the group-III nitride (III-N) semiconductors, InN has been the leaststudied and also the most complex. However, InN is a promising material for sub-THz electronic… (more)

Subjects/Keywords: Επίταξη με μοριακές δέσμες; Ημιαγωγοί III-V; Νιτρίδιο ινδίου (InN); Περιθλασιμετρία ακτίνων - Χ; Υπόστρωμα πυριτίου; Υπόστρωμα σαπφείρου; Επιταξιακή ανάπτυξη; Molecular beam epitaxy (MBE); III-V semiconductors; Indium nitride (InN); X-ray diffraction; Silicon substrate; Sapphire substrate; Epitaxial growth

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APA (6th Edition):

Ajagunna, A. O. (2011). Heteroepitaxy of InN on silicon (111) and r-plane sapphire substrates. (Thesis). University of Crete (UOC); Πανεπιστήμιο Κρήτης. Retrieved from http://hdl.handle.net/10442/hedi/30141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ajagunna, Adebowale Olufunso. “Heteroepitaxy of InN on silicon (111) and r-plane sapphire substrates.” 2011. Thesis, University of Crete (UOC); Πανεπιστήμιο Κρήτης. Accessed August 25, 2019. http://hdl.handle.net/10442/hedi/30141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ajagunna, Adebowale Olufunso. “Heteroepitaxy of InN on silicon (111) and r-plane sapphire substrates.” 2011. Web. 25 Aug 2019.

Vancouver:

Ajagunna AO. Heteroepitaxy of InN on silicon (111) and r-plane sapphire substrates. [Internet] [Thesis]. University of Crete (UOC); Πανεπιστήμιο Κρήτης; 2011. [cited 2019 Aug 25]. Available from: http://hdl.handle.net/10442/hedi/30141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ajagunna AO. Heteroepitaxy of InN on silicon (111) and r-plane sapphire substrates. [Thesis]. University of Crete (UOC); Πανεπιστήμιο Κρήτης; 2011. Available from: http://hdl.handle.net/10442/hedi/30141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Ohio University

7. Gao, Yungeng. Effect of fluid dynamics and reactor design on the epitaxial growth of gallium nitride on silicon substrate by metalorganic chemical vapor deposition.

Degree: PhD, Chemical Engineering (Engineering), 2000, Ohio University

  MOCVD of GaN on silicon substrate is a very complicated process with the coupling of heteroepitaxy, fluid dynamics, and chemical mechanisms. This dissertation presents… (more)

Subjects/Keywords: Engineering, Chemical; fluid dynamics; reactor design; epitaxial growth; gallium nitride; silicon substrate; metalorganic chemical vapor deposition

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APA (6th Edition):

Gao, Y. (2000). Effect of fluid dynamics and reactor design on the epitaxial growth of gallium nitride on silicon substrate by metalorganic chemical vapor deposition. (Doctoral Dissertation). Ohio University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1179171265

Chicago Manual of Style (16th Edition):

Gao, Yungeng. “Effect of fluid dynamics and reactor design on the epitaxial growth of gallium nitride on silicon substrate by metalorganic chemical vapor deposition.” 2000. Doctoral Dissertation, Ohio University. Accessed August 25, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1179171265.

MLA Handbook (7th Edition):

Gao, Yungeng. “Effect of fluid dynamics and reactor design on the epitaxial growth of gallium nitride on silicon substrate by metalorganic chemical vapor deposition.” 2000. Web. 25 Aug 2019.

Vancouver:

Gao Y. Effect of fluid dynamics and reactor design on the epitaxial growth of gallium nitride on silicon substrate by metalorganic chemical vapor deposition. [Internet] [Doctoral dissertation]. Ohio University; 2000. [cited 2019 Aug 25]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1179171265.

Council of Science Editors:

Gao Y. Effect of fluid dynamics and reactor design on the epitaxial growth of gallium nitride on silicon substrate by metalorganic chemical vapor deposition. [Doctoral Dissertation]. Ohio University; 2000. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1179171265

8. De Lara, D. Enhanced visibility of MoS2, MoSe2, WSe2 and black-phosphorus: Making optical identification of 2D semiconductors easier.

Degree: 2018, MDPI AG

Subjects/Keywords: Black phosphorus; Molybdenum diselenide (MoSe2); Molybdenum disulfide (MoS2); Optical identification; Silicon nitride substrate; Tungsten diselenide (WSe2); Two-dimensional semiconductors; Física

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APA (6th Edition):

De Lara, D. (2018). Enhanced visibility of MoS2, MoSe2, WSe2 and black-phosphorus: Making optical identification of 2D semiconductors easier. (Thesis). MDPI AG. Retrieved from http://hdl.handle.net/10486/676444

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

De Lara, D. “Enhanced visibility of MoS2, MoSe2, WSe2 and black-phosphorus: Making optical identification of 2D semiconductors easier.” 2018. Thesis, MDPI AG. Accessed August 25, 2019. http://hdl.handle.net/10486/676444.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

De Lara, D. “Enhanced visibility of MoS2, MoSe2, WSe2 and black-phosphorus: Making optical identification of 2D semiconductors easier.” 2018. Web. 25 Aug 2019.

Vancouver:

De Lara D. Enhanced visibility of MoS2, MoSe2, WSe2 and black-phosphorus: Making optical identification of 2D semiconductors easier. [Internet] [Thesis]. MDPI AG; 2018. [cited 2019 Aug 25]. Available from: http://hdl.handle.net/10486/676444.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

De Lara D. Enhanced visibility of MoS2, MoSe2, WSe2 and black-phosphorus: Making optical identification of 2D semiconductors easier. [Thesis]. MDPI AG; 2018. Available from: http://hdl.handle.net/10486/676444

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.