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You searched for subject:(Silicon germanium). Showing records 1 – 30 of 243 total matches.

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University College Cork

1. Yu, Ran. A study of silicon and germanium junctionless transistors.

Degree: 2013, University College Cork

 Technology boosters, such as strain, HKMG and FinFET, have been introduced into semiconductor industry to extend Moore’s law beyond 130 nm technology nodes. New device… (more)

Subjects/Keywords: Germanium junctionless nanowire transistor; Silicon; Germanium; Transistors

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APA (6th Edition):

Yu, R. (2013). A study of silicon and germanium junctionless transistors. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/1283

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yu, Ran. “A study of silicon and germanium junctionless transistors.” 2013. Thesis, University College Cork. Accessed April 19, 2019. http://hdl.handle.net/10468/1283.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yu, Ran. “A study of silicon and germanium junctionless transistors.” 2013. Web. 19 Apr 2019.

Vancouver:

Yu R. A study of silicon and germanium junctionless transistors. [Internet] [Thesis]. University College Cork; 2013. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/10468/1283.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yu R. A study of silicon and germanium junctionless transistors. [Thesis]. University College Cork; 2013. Available from: http://hdl.handle.net/10468/1283

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Limerick

2. Kennedy, Tadhg. Nano-structuring of silicon and germanium :a viable route to high capacity, long cycle life lithium-ion battery electrodes.

Degree: 2015, University of Limerick

peer-reviewed

This thesis describes the development of high-capacity, next generation Li-ion battery electrodes based on germanium and silicon nanostructures grown directly from stainless steel current… (more)

Subjects/Keywords: nano-structuring; silicon; germanium

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APA (6th Edition):

Kennedy, T. (2015). Nano-structuring of silicon and germanium :a viable route to high capacity, long cycle life lithium-ion battery electrodes. (Thesis). University of Limerick. Retrieved from http://hdl.handle.net/10344/4833

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kennedy, Tadhg. “Nano-structuring of silicon and germanium :a viable route to high capacity, long cycle life lithium-ion battery electrodes.” 2015. Thesis, University of Limerick. Accessed April 19, 2019. http://hdl.handle.net/10344/4833.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kennedy, Tadhg. “Nano-structuring of silicon and germanium :a viable route to high capacity, long cycle life lithium-ion battery electrodes.” 2015. Web. 19 Apr 2019.

Vancouver:

Kennedy T. Nano-structuring of silicon and germanium :a viable route to high capacity, long cycle life lithium-ion battery electrodes. [Internet] [Thesis]. University of Limerick; 2015. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/10344/4833.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kennedy T. Nano-structuring of silicon and germanium :a viable route to high capacity, long cycle life lithium-ion battery electrodes. [Thesis]. University of Limerick; 2015. Available from: http://hdl.handle.net/10344/4833

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Univerzitet u Beogradu

3. Đurić, Zoran G. 1941-. Uticaj mehaničke deformacije na bipolarne poluprovodničke naprave.

Degree: Elektrotehnički fakultet, 2013, Univerzitet u Beogradu

Elektronika - poluprovodnici / Electronics - semiconductors

Rad je posvećen proučavanju elektronskih karakteristika germanijuma i silicijuma i bipolarnih poluprovodni čkih naprava podvrgnutih elastičnoj mehaničkoj deformaciji.… (more)

Subjects/Keywords: semiconductors; mechanical deformation; germanium; silicon

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APA (6th Edition):

Đurić, Z. G. 1. (2013). Uticaj mehaničke deformacije na bipolarne poluprovodničke naprave. (Thesis). Univerzitet u Beogradu. Retrieved from https://fedorabg.bg.ac.rs/fedora/get/o:6628/bdef:Content/get

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Đurić, Zoran G 1941-. “Uticaj mehaničke deformacije na bipolarne poluprovodničke naprave.” 2013. Thesis, Univerzitet u Beogradu. Accessed April 19, 2019. https://fedorabg.bg.ac.rs/fedora/get/o:6628/bdef:Content/get.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Đurić, Zoran G 1941-. “Uticaj mehaničke deformacije na bipolarne poluprovodničke naprave.” 2013. Web. 19 Apr 2019.

Vancouver:

Đurić ZG1. Uticaj mehaničke deformacije na bipolarne poluprovodničke naprave. [Internet] [Thesis]. Univerzitet u Beogradu; 2013. [cited 2019 Apr 19]. Available from: https://fedorabg.bg.ac.rs/fedora/get/o:6628/bdef:Content/get.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Đurić ZG1. Uticaj mehaničke deformacije na bipolarne poluprovodničke naprave. [Thesis]. Univerzitet u Beogradu; 2013. Available from: https://fedorabg.bg.ac.rs/fedora/get/o:6628/bdef:Content/get

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Victoria University of Wellington

4. Prabakar, Sujay. Synthesis and Characterization of Silicon and Germanium Nanocrystals and Titanium Disulphide Nanostructures.

Degree: 2010, Victoria University of Wellington

 This thesis is concerned with the synthesis and characterization of nanostructured materials in the solution, in particular silicon and germanium nanocrystals, their applica-tion as fluorescent… (more)

Subjects/Keywords: Titanium disulphide; Germanium; Silicon

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APA (6th Edition):

Prabakar, S. (2010). Synthesis and Characterization of Silicon and Germanium Nanocrystals and Titanium Disulphide Nanostructures. (Doctoral Dissertation). Victoria University of Wellington. Retrieved from http://hdl.handle.net/10063/4212

Chicago Manual of Style (16th Edition):

Prabakar, Sujay. “Synthesis and Characterization of Silicon and Germanium Nanocrystals and Titanium Disulphide Nanostructures.” 2010. Doctoral Dissertation, Victoria University of Wellington. Accessed April 19, 2019. http://hdl.handle.net/10063/4212.

MLA Handbook (7th Edition):

Prabakar, Sujay. “Synthesis and Characterization of Silicon and Germanium Nanocrystals and Titanium Disulphide Nanostructures.” 2010. Web. 19 Apr 2019.

Vancouver:

Prabakar S. Synthesis and Characterization of Silicon and Germanium Nanocrystals and Titanium Disulphide Nanostructures. [Internet] [Doctoral dissertation]. Victoria University of Wellington; 2010. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/10063/4212.

Council of Science Editors:

Prabakar S. Synthesis and Characterization of Silicon and Germanium Nanocrystals and Titanium Disulphide Nanostructures. [Doctoral Dissertation]. Victoria University of Wellington; 2010. Available from: http://hdl.handle.net/10063/4212


Cornell University

5. Richards, Benjamin. Bulk-Nucleated Vapor-Solid-Solid (VSS) Silicon AND Germanium Nanowires: Synthesis, Scaling, AND Applications .

Degree: 2018, Cornell University

 Nanowires are essential building blocks for many next generation devices. This includes applications in solar cells, field effect transistors, thermoelectric generators, chemical sensors, and electrochemical… (more)

Subjects/Keywords: silicon; Nanotechnology; Germanium; Nanowires; VSS

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APA (6th Edition):

Richards, B. (2018). Bulk-Nucleated Vapor-Solid-Solid (VSS) Silicon AND Germanium Nanowires: Synthesis, Scaling, AND Applications . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/59527

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Richards, Benjamin. “Bulk-Nucleated Vapor-Solid-Solid (VSS) Silicon AND Germanium Nanowires: Synthesis, Scaling, AND Applications .” 2018. Thesis, Cornell University. Accessed April 19, 2019. http://hdl.handle.net/1813/59527.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Richards, Benjamin. “Bulk-Nucleated Vapor-Solid-Solid (VSS) Silicon AND Germanium Nanowires: Synthesis, Scaling, AND Applications .” 2018. Web. 19 Apr 2019.

Vancouver:

Richards B. Bulk-Nucleated Vapor-Solid-Solid (VSS) Silicon AND Germanium Nanowires: Synthesis, Scaling, AND Applications . [Internet] [Thesis]. Cornell University; 2018. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/1813/59527.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Richards B. Bulk-Nucleated Vapor-Solid-Solid (VSS) Silicon AND Germanium Nanowires: Synthesis, Scaling, AND Applications . [Thesis]. Cornell University; 2018. Available from: http://hdl.handle.net/1813/59527

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

6. Martin, Thomas P Jr. Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface during Oxidation Reactions on Injection of Interstitials.

Degree: PhD, Materials Science and Engineering, 2017, University of Florida

 It is well known that the oxidation of Silicon will inject interstitial atoms into the bulk, causing various effects such as OED and OSF. The… (more)

Subjects/Keywords: germanium  – ion-implantation  – oxidation  – silicon

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APA (6th Edition):

Martin, T. P. J. (2017). Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface during Oxidation Reactions on Injection of Interstitials. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0051286

Chicago Manual of Style (16th Edition):

Martin, Thomas P Jr. “Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface during Oxidation Reactions on Injection of Interstitials.” 2017. Doctoral Dissertation, University of Florida. Accessed April 19, 2019. http://ufdc.ufl.edu/UFE0051286.

MLA Handbook (7th Edition):

Martin, Thomas P Jr. “Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface during Oxidation Reactions on Injection of Interstitials.” 2017. Web. 19 Apr 2019.

Vancouver:

Martin TPJ. Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface during Oxidation Reactions on Injection of Interstitials. [Internet] [Doctoral dissertation]. University of Florida; 2017. [cited 2019 Apr 19]. Available from: http://ufdc.ufl.edu/UFE0051286.

Council of Science Editors:

Martin TPJ. Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface during Oxidation Reactions on Injection of Interstitials. [Doctoral Dissertation]. University of Florida; 2017. Available from: http://ufdc.ufl.edu/UFE0051286


Université de Grenoble

7. Hauser, David. Elaboration de super-réseaux de boîtes quantiques à base de SiGe et développement de dispositifs pour l'étude de leurs propriétés thermoélectriques : Growth of SiGe-based Quantum Dot Superlattices and device developpement for the study of its thermoelectric properties.

Degree: Docteur es, Micro et Nano Électronique, 2011, Université de Grenoble

L'utilisation de dispositifs thermoélectriques à base de films minces en SiGe est envisagée dans de nombreuses applications comme la micro-génération de puissance ou le refroidissement… (more)

Subjects/Keywords: Thermoélectricité; Microélectronique; Silicium-germanium; Thermoelectricity; Microelectronics; Silicon-Germanium

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APA (6th Edition):

Hauser, D. (2011). Elaboration de super-réseaux de boîtes quantiques à base de SiGe et développement de dispositifs pour l'étude de leurs propriétés thermoélectriques : Growth of SiGe-based Quantum Dot Superlattices and device developpement for the study of its thermoelectric properties. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENT004

Chicago Manual of Style (16th Edition):

Hauser, David. “Elaboration de super-réseaux de boîtes quantiques à base de SiGe et développement de dispositifs pour l'étude de leurs propriétés thermoélectriques : Growth of SiGe-based Quantum Dot Superlattices and device developpement for the study of its thermoelectric properties.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed April 19, 2019. http://www.theses.fr/2011GRENT004.

MLA Handbook (7th Edition):

Hauser, David. “Elaboration de super-réseaux de boîtes quantiques à base de SiGe et développement de dispositifs pour l'étude de leurs propriétés thermoélectriques : Growth of SiGe-based Quantum Dot Superlattices and device developpement for the study of its thermoelectric properties.” 2011. Web. 19 Apr 2019.

Vancouver:

Hauser D. Elaboration de super-réseaux de boîtes quantiques à base de SiGe et développement de dispositifs pour l'étude de leurs propriétés thermoélectriques : Growth of SiGe-based Quantum Dot Superlattices and device developpement for the study of its thermoelectric properties. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2019 Apr 19]. Available from: http://www.theses.fr/2011GRENT004.

Council of Science Editors:

Hauser D. Elaboration de super-réseaux de boîtes quantiques à base de SiGe et développement de dispositifs pour l'étude de leurs propriétés thermoélectriques : Growth of SiGe-based Quantum Dot Superlattices and device developpement for the study of its thermoelectric properties. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENT004


Université Paris-Sud – Paris XI

8. Prost, Mathias. Injection électrique pour un laser en germanium contraint : Electrical injection for a strained germanium laser.

Degree: Docteur es, Physique, 2015, Université Paris-Sud – Paris XI

L’utilisation du germanium dopé de type n et contraint en tension ouvre la possibilité d’obtenir une source laser monolithique pour la photonique sur silicium. Mes… (more)

Subjects/Keywords: Photonique sur silicium; Germanium; Injection électrique; Silicon photonics; Germanium; Electrical injection

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APA (6th Edition):

Prost, M. (2015). Injection électrique pour un laser en germanium contraint : Electrical injection for a strained germanium laser. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2015PA112027

Chicago Manual of Style (16th Edition):

Prost, Mathias. “Injection électrique pour un laser en germanium contraint : Electrical injection for a strained germanium laser.” 2015. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed April 19, 2019. http://www.theses.fr/2015PA112027.

MLA Handbook (7th Edition):

Prost, Mathias. “Injection électrique pour un laser en germanium contraint : Electrical injection for a strained germanium laser.” 2015. Web. 19 Apr 2019.

Vancouver:

Prost M. Injection électrique pour un laser en germanium contraint : Electrical injection for a strained germanium laser. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2015. [cited 2019 Apr 19]. Available from: http://www.theses.fr/2015PA112027.

Council of Science Editors:

Prost M. Injection électrique pour un laser en germanium contraint : Electrical injection for a strained germanium laser. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2015. Available from: http://www.theses.fr/2015PA112027


Université Paris-Sud – Paris XI

9. Virot, Léopold. Développement de photodiodes à avalanche en Ge sur Si pour la détection faible signal et grande vitesse : Development of Ge on Si avalanche photodiodes for low signal and high speed detection.

Degree: Docteur es, Physique, 2014, Université Paris-Sud – Paris XI

Afin d’adresser la problématique liée aux limitations des interconnections métalliques en termes de débits notamment, la photonique Si s’est imposée comme une technologie de choix.… (more)

Subjects/Keywords: Photonique; Silicium; Germanium; Photodiode; Avalanche; Photonics; Silicon; Germanium; Photodiode; Avalanche

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APA (6th Edition):

Virot, L. (2014). Développement de photodiodes à avalanche en Ge sur Si pour la détection faible signal et grande vitesse : Development of Ge on Si avalanche photodiodes for low signal and high speed detection. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2014PA112414

Chicago Manual of Style (16th Edition):

Virot, Léopold. “Développement de photodiodes à avalanche en Ge sur Si pour la détection faible signal et grande vitesse : Development of Ge on Si avalanche photodiodes for low signal and high speed detection.” 2014. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed April 19, 2019. http://www.theses.fr/2014PA112414.

MLA Handbook (7th Edition):

Virot, Léopold. “Développement de photodiodes à avalanche en Ge sur Si pour la détection faible signal et grande vitesse : Development of Ge on Si avalanche photodiodes for low signal and high speed detection.” 2014. Web. 19 Apr 2019.

Vancouver:

Virot L. Développement de photodiodes à avalanche en Ge sur Si pour la détection faible signal et grande vitesse : Development of Ge on Si avalanche photodiodes for low signal and high speed detection. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2014. [cited 2019 Apr 19]. Available from: http://www.theses.fr/2014PA112414.

Council of Science Editors:

Virot L. Développement de photodiodes à avalanche en Ge sur Si pour la détection faible signal et grande vitesse : Development of Ge on Si avalanche photodiodes for low signal and high speed detection. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2014. Available from: http://www.theses.fr/2014PA112414


King Abdullah University of Science and Technology

10. Nassar, Joanna M. Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials.

Degree: 2014, King Abdullah University of Science and Technology

 For the last four decades, Si CMOS technology has been advancing with Moore’s law prediction, working itself down to the sub-20 nm regime. However, fundamental… (more)

Subjects/Keywords: Flexible; Silicon Germanium; Germanium; MOSCAPs; High Mobility; Cost-Effective

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APA (6th Edition):

Nassar, J. M. (2014). Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials. (Thesis). King Abdullah University of Science and Technology. Retrieved from http://hdl.handle.net/10754/316698

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Nassar, Joanna M. “Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials.” 2014. Thesis, King Abdullah University of Science and Technology. Accessed April 19, 2019. http://hdl.handle.net/10754/316698.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Nassar, Joanna M. “Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials.” 2014. Web. 19 Apr 2019.

Vancouver:

Nassar JM. Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials. [Internet] [Thesis]. King Abdullah University of Science and Technology; 2014. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/10754/316698.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Nassar JM. Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials. [Thesis]. King Abdullah University of Science and Technology; 2014. Available from: http://hdl.handle.net/10754/316698

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Pretoria

11. Nyamhere, Cloud. Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS.

Degree: Physics, 2010, University of Pretoria

 Defects in semiconductors are crucial to device operation, as they can either be beneficial or detrimental to the device operation depending on the application. For… (more)

Subjects/Keywords: Dlts; Defects; Radiation; Silicon; Germanium; Ldlts; UCTD

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APA (6th Edition):

Nyamhere, C. (2010). Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS. (Doctoral Dissertation). University of Pretoria. Retrieved from http://hdl.handle.net/2263/26574

Chicago Manual of Style (16th Edition):

Nyamhere, Cloud. “Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS.” 2010. Doctoral Dissertation, University of Pretoria. Accessed April 19, 2019. http://hdl.handle.net/2263/26574.

MLA Handbook (7th Edition):

Nyamhere, Cloud. “Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS.” 2010. Web. 19 Apr 2019.

Vancouver:

Nyamhere C. Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS. [Internet] [Doctoral dissertation]. University of Pretoria; 2010. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/2263/26574.

Council of Science Editors:

Nyamhere C. Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS. [Doctoral Dissertation]. University of Pretoria; 2010. Available from: http://hdl.handle.net/2263/26574


University of Pretoria

12. [No author]. Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS .

Degree: 2010, University of Pretoria

 Defects in semiconductors are crucial to device operation, as they can either be beneficial or detrimental to the device operation depending on the application. For… (more)

Subjects/Keywords: Dlts; Defects; Radiation; Silicon; Germanium; Ldlts; UCTD

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APA (6th Edition):

author], [. (2010). Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS . (Doctoral Dissertation). University of Pretoria. Retrieved from http://upetd.up.ac.za/thesis/available/etd-02022010-134937/

Chicago Manual of Style (16th Edition):

author], [No. “Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS .” 2010. Doctoral Dissertation, University of Pretoria. Accessed April 19, 2019. http://upetd.up.ac.za/thesis/available/etd-02022010-134937/.

MLA Handbook (7th Edition):

author], [No. “Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS .” 2010. Web. 19 Apr 2019.

Vancouver:

author] [. Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS . [Internet] [Doctoral dissertation]. University of Pretoria; 2010. [cited 2019 Apr 19]. Available from: http://upetd.up.ac.za/thesis/available/etd-02022010-134937/.

Council of Science Editors:

author] [. Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS . [Doctoral Dissertation]. University of Pretoria; 2010. Available from: http://upetd.up.ac.za/thesis/available/etd-02022010-134937/


Vanderbilt University

13. Arora, Rajan. Reliability Issues in Germanium and Silicon Carbide MOS Devices.

Degree: MS, Electrical Engineering, 2009, Vanderbilt University

 The small band-gap and the non-ideal high-k germanium interface makes Ge p-MOSFETs susceptible to various reliability issues. Similarly, the non-ideal SiO2-SiC interface in SiC MOS… (more)

Subjects/Keywords: conductance; capacitance; Silicon Carbide; MOS; Germanium

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APA (6th Edition):

Arora, R. (2009). Reliability Issues in Germanium and Silicon Carbide MOS Devices. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-06172009-164817/ ;

Chicago Manual of Style (16th Edition):

Arora, Rajan. “Reliability Issues in Germanium and Silicon Carbide MOS Devices.” 2009. Masters Thesis, Vanderbilt University. Accessed April 19, 2019. http://etd.library.vanderbilt.edu/available/etd-06172009-164817/ ;.

MLA Handbook (7th Edition):

Arora, Rajan. “Reliability Issues in Germanium and Silicon Carbide MOS Devices.” 2009. Web. 19 Apr 2019.

Vancouver:

Arora R. Reliability Issues in Germanium and Silicon Carbide MOS Devices. [Internet] [Masters thesis]. Vanderbilt University; 2009. [cited 2019 Apr 19]. Available from: http://etd.library.vanderbilt.edu/available/etd-06172009-164817/ ;.

Council of Science Editors:

Arora R. Reliability Issues in Germanium and Silicon Carbide MOS Devices. [Masters Thesis]. Vanderbilt University; 2009. Available from: http://etd.library.vanderbilt.edu/available/etd-06172009-164817/ ;


University of New South Wales

14. McVey, Benjamin. Solution synthesis and optical tunability of low toxicity semiconductor nanocrystals.

Degree: Chemistry, 2017, University of New South Wales

 Semiconductor nanocrystals have the potential to revolutionize several important applications inducing medical imaging and solar cells. The most popular semiconductor nanocrystals are cadmium or lead… (more)

Subjects/Keywords: Synthesis; Semiconductor; Nanocrystal; Silicon; Germanium; Optical properties

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APA (6th Edition):

McVey, B. (2017). Solution synthesis and optical tunability of low toxicity semiconductor nanocrystals. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/57765

Chicago Manual of Style (16th Edition):

McVey, Benjamin. “Solution synthesis and optical tunability of low toxicity semiconductor nanocrystals.” 2017. Doctoral Dissertation, University of New South Wales. Accessed April 19, 2019. http://handle.unsw.edu.au/1959.4/57765.

MLA Handbook (7th Edition):

McVey, Benjamin. “Solution synthesis and optical tunability of low toxicity semiconductor nanocrystals.” 2017. Web. 19 Apr 2019.

Vancouver:

McVey B. Solution synthesis and optical tunability of low toxicity semiconductor nanocrystals. [Internet] [Doctoral dissertation]. University of New South Wales; 2017. [cited 2019 Apr 19]. Available from: http://handle.unsw.edu.au/1959.4/57765.

Council of Science Editors:

McVey B. Solution synthesis and optical tunability of low toxicity semiconductor nanocrystals. [Doctoral Dissertation]. University of New South Wales; 2017. Available from: http://handle.unsw.edu.au/1959.4/57765


University of New Mexico

15. Ghosh, Swapnadip. LARGE-AREA, WAFER-SCALE EPITAXIAL GROWTH OF GERMANIUM ON SILICON AND INTEGRATION OF HIGH-PERFORMANCE TRANSISTORS.

Degree: Electrical and Computer Engineering, 2015, University of New Mexico

 Building on a unique two-step, simple MBE growth technique, we have investigated possible dislocation locking mechanisms by dopant impurities, coupled with artificially introduced oxygen. In… (more)

Subjects/Keywords: Germanium; Silicon; Epitaxy; MOSFETs; Quantum Dots

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APA (6th Edition):

Ghosh, S. (2015). LARGE-AREA, WAFER-SCALE EPITAXIAL GROWTH OF GERMANIUM ON SILICON AND INTEGRATION OF HIGH-PERFORMANCE TRANSISTORS. (Doctoral Dissertation). University of New Mexico. Retrieved from http://hdl.handle.net/1928/25778

Chicago Manual of Style (16th Edition):

Ghosh, Swapnadip. “LARGE-AREA, WAFER-SCALE EPITAXIAL GROWTH OF GERMANIUM ON SILICON AND INTEGRATION OF HIGH-PERFORMANCE TRANSISTORS.” 2015. Doctoral Dissertation, University of New Mexico. Accessed April 19, 2019. http://hdl.handle.net/1928/25778.

MLA Handbook (7th Edition):

Ghosh, Swapnadip. “LARGE-AREA, WAFER-SCALE EPITAXIAL GROWTH OF GERMANIUM ON SILICON AND INTEGRATION OF HIGH-PERFORMANCE TRANSISTORS.” 2015. Web. 19 Apr 2019.

Vancouver:

Ghosh S. LARGE-AREA, WAFER-SCALE EPITAXIAL GROWTH OF GERMANIUM ON SILICON AND INTEGRATION OF HIGH-PERFORMANCE TRANSISTORS. [Internet] [Doctoral dissertation]. University of New Mexico; 2015. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/1928/25778.

Council of Science Editors:

Ghosh S. LARGE-AREA, WAFER-SCALE EPITAXIAL GROWTH OF GERMANIUM ON SILICON AND INTEGRATION OF HIGH-PERFORMANCE TRANSISTORS. [Doctoral Dissertation]. University of New Mexico; 2015. Available from: http://hdl.handle.net/1928/25778


Penn State University

16. Nimmatoori, Pramod. Vapor-liquid-solid growth of Silicon and Silicon Germanium nanowires.

Degree: PhD, Chemical Engineering, 2008, Penn State University

 Si and Si1-xGex nanowires are promising materials with potential applications in various disciplines of science and technology. Small diameter nanowires can act as model systems… (more)

Subjects/Keywords: Silicon Germanium; Silicon; Nanowires; Vapor-liquid-solid mechanism; Growth

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APA (6th Edition):

Nimmatoori, P. (2008). Vapor-liquid-solid growth of Silicon and Silicon Germanium nanowires. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/9301

Chicago Manual of Style (16th Edition):

Nimmatoori, Pramod. “Vapor-liquid-solid growth of Silicon and Silicon Germanium nanowires.” 2008. Doctoral Dissertation, Penn State University. Accessed April 19, 2019. https://etda.libraries.psu.edu/catalog/9301.

MLA Handbook (7th Edition):

Nimmatoori, Pramod. “Vapor-liquid-solid growth of Silicon and Silicon Germanium nanowires.” 2008. Web. 19 Apr 2019.

Vancouver:

Nimmatoori P. Vapor-liquid-solid growth of Silicon and Silicon Germanium nanowires. [Internet] [Doctoral dissertation]. Penn State University; 2008. [cited 2019 Apr 19]. Available from: https://etda.libraries.psu.edu/catalog/9301.

Council of Science Editors:

Nimmatoori P. Vapor-liquid-solid growth of Silicon and Silicon Germanium nanowires. [Doctoral Dissertation]. Penn State University; 2008. Available from: https://etda.libraries.psu.edu/catalog/9301


University of Dayton

17. Erdman, Emily Clare. Design and Implementation of Transmission-Modulated Photoconductive Decay System for Recombination Lifetime Measurements.

Degree: MS(M.S.), Electro-Optics, 2016, University of Dayton

 Today's problems in silicon photonics will likely require an integration of CMOS compatible, high quality thin films grown on top of Si. GeSn is one… (more)

Subjects/Keywords: Optics; Recombination lifetime, transmission modulated photoconductive decay, silicon photonics, thin films, germanium and germanium tin

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APA (6th Edition):

Erdman, E. C. (2016). Design and Implementation of Transmission-Modulated Photoconductive Decay System for Recombination Lifetime Measurements. (Masters Thesis). University of Dayton. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=dayton1480535397035212

Chicago Manual of Style (16th Edition):

Erdman, Emily Clare. “Design and Implementation of Transmission-Modulated Photoconductive Decay System for Recombination Lifetime Measurements.” 2016. Masters Thesis, University of Dayton. Accessed April 19, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1480535397035212.

MLA Handbook (7th Edition):

Erdman, Emily Clare. “Design and Implementation of Transmission-Modulated Photoconductive Decay System for Recombination Lifetime Measurements.” 2016. Web. 19 Apr 2019.

Vancouver:

Erdman EC. Design and Implementation of Transmission-Modulated Photoconductive Decay System for Recombination Lifetime Measurements. [Internet] [Masters thesis]. University of Dayton; 2016. [cited 2019 Apr 19]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=dayton1480535397035212.

Council of Science Editors:

Erdman EC. Design and Implementation of Transmission-Modulated Photoconductive Decay System for Recombination Lifetime Measurements. [Masters Thesis]. University of Dayton; 2016. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=dayton1480535397035212

18. Amiard, Guillaume. Utilisation du FIB pour la nanostructuration et l'auto-assemblage de réseaux de nano-objets pour des applications microélectroniques : Modèle analytique avancé pour le pronostic des systèmes industriels soumis à la fatigue.

Degree: Docteur es, Mécanique, Physique, Micro et Nanoélectronique, 2012, Aix Marseille Université

Les travaux présentés dans ce manuscrit, sont basés sur l'étude de l'auto-organisation de la matière à l'échelle nanométrique. A cette échelle, les énergies de surfaces… (more)

Subjects/Keywords: FIB; Auto-organisation; Silicium; Germanium; SiO2; Microelectronique; FIB; Self-organisation; Silicon; Germanium; SiO2; Microelectronics

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APA (6th Edition):

Amiard, G. (2012). Utilisation du FIB pour la nanostructuration et l'auto-assemblage de réseaux de nano-objets pour des applications microélectroniques : Modèle analytique avancé pour le pronostic des systèmes industriels soumis à la fatigue. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2012AIXM4329

Chicago Manual of Style (16th Edition):

Amiard, Guillaume. “Utilisation du FIB pour la nanostructuration et l'auto-assemblage de réseaux de nano-objets pour des applications microélectroniques : Modèle analytique avancé pour le pronostic des systèmes industriels soumis à la fatigue.” 2012. Doctoral Dissertation, Aix Marseille Université. Accessed April 19, 2019. http://www.theses.fr/2012AIXM4329.

MLA Handbook (7th Edition):

Amiard, Guillaume. “Utilisation du FIB pour la nanostructuration et l'auto-assemblage de réseaux de nano-objets pour des applications microélectroniques : Modèle analytique avancé pour le pronostic des systèmes industriels soumis à la fatigue.” 2012. Web. 19 Apr 2019.

Vancouver:

Amiard G. Utilisation du FIB pour la nanostructuration et l'auto-assemblage de réseaux de nano-objets pour des applications microélectroniques : Modèle analytique avancé pour le pronostic des systèmes industriels soumis à la fatigue. [Internet] [Doctoral dissertation]. Aix Marseille Université 2012. [cited 2019 Apr 19]. Available from: http://www.theses.fr/2012AIXM4329.

Council of Science Editors:

Amiard G. Utilisation du FIB pour la nanostructuration et l'auto-assemblage de réseaux de nano-objets pour des applications microélectroniques : Modèle analytique avancé pour le pronostic des systèmes industriels soumis à la fatigue. [Doctoral Dissertation]. Aix Marseille Université 2012. Available from: http://www.theses.fr/2012AIXM4329

19. Mizokuchi, Raisei. Hétérostructures de silicium-germanium à dimensionnalité réduite pour la spintronique quantique : Low-dimensional silicon-germanium heterostructures for quantum spintronics.

Degree: Docteur es, Nanophysique, 2018, Grenoble Alpes

 L’intégration à large échelles de bits quantiques (qubits) nécessite le développement de systèmes quantiques à deux niveaux à l’état solide comme par exemple des spins… (more)

Subjects/Keywords: Spintronique quantique; Germanium; Silicium; Transport quantique; Nanoélectronique; Quantum spintronics; Germanium; Silicon; Quantum transport; Nanoelectronics; 530

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APA (6th Edition):

Mizokuchi, R. (2018). Hétérostructures de silicium-germanium à dimensionnalité réduite pour la spintronique quantique : Low-dimensional silicon-germanium heterostructures for quantum spintronics. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAY013

Chicago Manual of Style (16th Edition):

Mizokuchi, Raisei. “Hétérostructures de silicium-germanium à dimensionnalité réduite pour la spintronique quantique : Low-dimensional silicon-germanium heterostructures for quantum spintronics.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed April 19, 2019. http://www.theses.fr/2018GREAY013.

MLA Handbook (7th Edition):

Mizokuchi, Raisei. “Hétérostructures de silicium-germanium à dimensionnalité réduite pour la spintronique quantique : Low-dimensional silicon-germanium heterostructures for quantum spintronics.” 2018. Web. 19 Apr 2019.

Vancouver:

Mizokuchi R. Hétérostructures de silicium-germanium à dimensionnalité réduite pour la spintronique quantique : Low-dimensional silicon-germanium heterostructures for quantum spintronics. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2019 Apr 19]. Available from: http://www.theses.fr/2018GREAY013.

Council of Science Editors:

Mizokuchi R. Hétérostructures de silicium-germanium à dimensionnalité réduite pour la spintronique quantique : Low-dimensional silicon-germanium heterostructures for quantum spintronics. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAY013

20. Claude, Jean-Benoît. Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS.

Degree: Docteur es, Physique et sciences de la matière. Matière condensée et nanosciences, 2017, Aix Marseille Université

Les problématiques liées à la diminution de la taille des dispositifs actuels amènent l’industrie à réfléchir à des techniques de gravure ayant des résolutions à… (more)

Subjects/Keywords: Nanostructures; Fib; Silicium; Germanium; Coeur-Coquille; SiGe; Nanostructures; Fib; Silicon; Germanium; Core-Shell; SiGe

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APA (6th Edition):

Claude, J. (2017). Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2017AIXM0445

Chicago Manual of Style (16th Edition):

Claude, Jean-Benoît. “Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS.” 2017. Doctoral Dissertation, Aix Marseille Université. Accessed April 19, 2019. http://www.theses.fr/2017AIXM0445.

MLA Handbook (7th Edition):

Claude, Jean-Benoît. “Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS.” 2017. Web. 19 Apr 2019.

Vancouver:

Claude J. Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS. [Internet] [Doctoral dissertation]. Aix Marseille Université 2017. [cited 2019 Apr 19]. Available from: http://www.theses.fr/2017AIXM0445.

Council of Science Editors:

Claude J. Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS. [Doctoral Dissertation]. Aix Marseille Université 2017. Available from: http://www.theses.fr/2017AIXM0445


University of New Mexico

21. Leonhardt, Darin. Selective epitaxial growth techniques to integrate high-quality germanium on silicon.

Degree: Chemical and Biological Engineering, 2011, University of New Mexico

 High-quality Ge-on-Si heterostructures have been actively pursued for many advanced applications, including near-infrared photodetectors, high-mobility field effect transistors, and virtual substrates for integrating III-V multijunction… (more)

Subjects/Keywords: Heteroepitaxy; Germanium; Silicon; Selective Growth; Electronic Materials; Molecular beam epitaxy.; Germanium crystals – Growth.

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APA (6th Edition):

Leonhardt, D. (2011). Selective epitaxial growth techniques to integrate high-quality germanium on silicon. (Doctoral Dissertation). University of New Mexico. Retrieved from http://hdl.handle.net/1928/12863

Chicago Manual of Style (16th Edition):

Leonhardt, Darin. “Selective epitaxial growth techniques to integrate high-quality germanium on silicon.” 2011. Doctoral Dissertation, University of New Mexico. Accessed April 19, 2019. http://hdl.handle.net/1928/12863.

MLA Handbook (7th Edition):

Leonhardt, Darin. “Selective epitaxial growth techniques to integrate high-quality germanium on silicon.” 2011. Web. 19 Apr 2019.

Vancouver:

Leonhardt D. Selective epitaxial growth techniques to integrate high-quality germanium on silicon. [Internet] [Doctoral dissertation]. University of New Mexico; 2011. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/1928/12863.

Council of Science Editors:

Leonhardt D. Selective epitaxial growth techniques to integrate high-quality germanium on silicon. [Doctoral Dissertation]. University of New Mexico; 2011. Available from: http://hdl.handle.net/1928/12863


Georgia Tech

22. Shankar, Subramaniam. Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors.

Degree: MS, Electrical and Computer Engineering, 2010, Georgia Tech

 This thesis explores the critical advantages of using silicon-germanium (SiGe) HBTs for RF front-end design. The first chapter looks at the SiGe BiCMOS technology platform… (more)

Subjects/Keywords: Circuit design; Sige; Ultra-wide tunable; Silicon-germanium; Heterojunctions; Biopolar transistors; Germanium compounds; Silicon compounds; Wireless communication systems

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APA (6th Edition):

Shankar, S. (2010). Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/34807

Chicago Manual of Style (16th Edition):

Shankar, Subramaniam. “Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors.” 2010. Masters Thesis, Georgia Tech. Accessed April 19, 2019. http://hdl.handle.net/1853/34807.

MLA Handbook (7th Edition):

Shankar, Subramaniam. “Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors.” 2010. Web. 19 Apr 2019.

Vancouver:

Shankar S. Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors. [Internet] [Masters thesis]. Georgia Tech; 2010. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/1853/34807.

Council of Science Editors:

Shankar S. Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors. [Masters Thesis]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/34807


University of Florida

23. Vito, Nicholas J. Ion Beam-Mixed Germanium and Silicon Lithium Ion Battery Anodes.

Degree: PhD, Materials Science and Engineering, 2013, University of Florida

 Lithium ion batteries have now become a ubiquitous part of modern society as an energy storage device.  Attractive due to the high energy density compared… (more)

Subjects/Keywords: Adhesion; Dosage; Electrodes; Electrons; Germanium; Ion beams; Ions; Lithium; Silicon; Thin films; anode  – battery  – germanium  – implantation  – lithium  – mixing  – silicon

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APA (6th Edition):

Vito, N. J. (2013). Ion Beam-Mixed Germanium and Silicon Lithium Ion Battery Anodes. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0046278

Chicago Manual of Style (16th Edition):

Vito, Nicholas J. “Ion Beam-Mixed Germanium and Silicon Lithium Ion Battery Anodes.” 2013. Doctoral Dissertation, University of Florida. Accessed April 19, 2019. http://ufdc.ufl.edu/UFE0046278.

MLA Handbook (7th Edition):

Vito, Nicholas J. “Ion Beam-Mixed Germanium and Silicon Lithium Ion Battery Anodes.” 2013. Web. 19 Apr 2019.

Vancouver:

Vito NJ. Ion Beam-Mixed Germanium and Silicon Lithium Ion Battery Anodes. [Internet] [Doctoral dissertation]. University of Florida; 2013. [cited 2019 Apr 19]. Available from: http://ufdc.ufl.edu/UFE0046278.

Council of Science Editors:

Vito NJ. Ion Beam-Mixed Germanium and Silicon Lithium Ion Battery Anodes. [Doctoral Dissertation]. University of Florida; 2013. Available from: http://ufdc.ufl.edu/UFE0046278


NSYSU

24. Lin, Min-yan. Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell.

Degree: Master, Electrical Engineering, 2014, NSYSU

 In this paper, we propose a series of amorphous silicon (a-Si) and amorphous silicon germanium (a-SiGe) heterojunction solar cells. The a-SiGe is inserted into the… (more)

Subjects/Keywords: Thin Film Solar Cell; Amorphous Silicon; High Conversion Efficiency; Amorphous Silicon Germanium

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APA (6th Edition):

Lin, M. (2014). Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706114-153534

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Min-yan. “Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell.” 2014. Thesis, NSYSU. Accessed April 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706114-153534.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Min-yan. “Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell.” 2014. Web. 19 Apr 2019.

Vancouver:

Lin M. Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Apr 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706114-153534.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin M. Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706114-153534

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Iowa State University

25. Li, Zhao. Properties of Amorphous Silicon Germanium Films and Devices Prepared Using Chemical Annealing.

Degree: 2013, Iowa State University

 Amorphous silicon germanium solar cells have been extensively used for many years due to the low cost, easy fabrication, tunable bandgap and special properties. However,… (more)

Subjects/Keywords: amorphous silicon; amorphous silicon germanium; chemical annealing; ion bondboardment; solar cell; Electrical and Electronics; Engineering

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APA (6th Edition):

Li, Z. (2013). Properties of Amorphous Silicon Germanium Films and Devices Prepared Using Chemical Annealing. (Thesis). Iowa State University. Retrieved from https://lib.dr.iastate.edu/etd/13040

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Zhao. “Properties of Amorphous Silicon Germanium Films and Devices Prepared Using Chemical Annealing.” 2013. Thesis, Iowa State University. Accessed April 19, 2019. https://lib.dr.iastate.edu/etd/13040.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Zhao. “Properties of Amorphous Silicon Germanium Films and Devices Prepared Using Chemical Annealing.” 2013. Web. 19 Apr 2019.

Vancouver:

Li Z. Properties of Amorphous Silicon Germanium Films and Devices Prepared Using Chemical Annealing. [Internet] [Thesis]. Iowa State University; 2013. [cited 2019 Apr 19]. Available from: https://lib.dr.iastate.edu/etd/13040.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li Z. Properties of Amorphous Silicon Germanium Films and Devices Prepared Using Chemical Annealing. [Thesis]. Iowa State University; 2013. Available from: https://lib.dr.iastate.edu/etd/13040

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Waterloo

26. Tian, Lin. Development of Advanced Thin Films by PECVD for Photovoltaic Applications.

Degree: 2013, University of Waterloo

 Compared to wafer based solar cells, thin film solar cells greatly reduce material cost and thermal budget due to low temperature process. Monolithically manufacturing allows… (more)

Subjects/Keywords: thin film solar cells; amorphous silicon; microcrystalline Si; silicon germanium; photovoltaic; PECVD; ICP CVD

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APA (6th Edition):

Tian, L. (2013). Development of Advanced Thin Films by PECVD for Photovoltaic Applications. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/7250

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tian, Lin. “Development of Advanced Thin Films by PECVD for Photovoltaic Applications.” 2013. Thesis, University of Waterloo. Accessed April 19, 2019. http://hdl.handle.net/10012/7250.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tian, Lin. “Development of Advanced Thin Films by PECVD for Photovoltaic Applications.” 2013. Web. 19 Apr 2019.

Vancouver:

Tian L. Development of Advanced Thin Films by PECVD for Photovoltaic Applications. [Internet] [Thesis]. University of Waterloo; 2013. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/10012/7250.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tian L. Development of Advanced Thin Films by PECVD for Photovoltaic Applications. [Thesis]. University of Waterloo; 2013. Available from: http://hdl.handle.net/10012/7250

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

27. Rummukainen, Mikko. Vacancy Defects in Silicon Related Materials and Gallium Nitride.

Degree: 2007, Helsinki University of Technology

Defects on the atomic scale strongly affect the performance of semiconductor devices and the achievable device lifetimes. Positron annihilation spectroscopy is sensitive to vacancy-type defects,… (more)

Subjects/Keywords: positron annihilation spectroscopy; vacancy defects; gallium nitride; silicon; germanium

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APA (6th Edition):

Rummukainen, M. (2007). Vacancy Defects in Silicon Related Materials and Gallium Nitride. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2007/isbn9789512285723/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rummukainen, Mikko. “Vacancy Defects in Silicon Related Materials and Gallium Nitride.” 2007. Thesis, Helsinki University of Technology. Accessed April 19, 2019. http://lib.tkk.fi/Diss/2007/isbn9789512285723/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rummukainen, Mikko. “Vacancy Defects in Silicon Related Materials and Gallium Nitride.” 2007. Web. 19 Apr 2019.

Vancouver:

Rummukainen M. Vacancy Defects in Silicon Related Materials and Gallium Nitride. [Internet] [Thesis]. Helsinki University of Technology; 2007. [cited 2019 Apr 19]. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512285723/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rummukainen M. Vacancy Defects in Silicon Related Materials and Gallium Nitride. [Thesis]. Helsinki University of Technology; 2007. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512285723/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Alberta

28. Kohandehghan, Alireza. Silicon and Germanium Nanowires Anode Materials for Lithium and Sodium-ion Batteries.

Degree: PhD, Department of Chemical and Materials Engineering, 2014, University of Alberta

 This thesis is focused on the silicon-based anode materials for lithium-ion batteries (LIBs) as well as germanium-based electrode materials for sodium-ion batteries (NIBs). In our… (more)

Subjects/Keywords: Silicon; Germanium; Sodium ion batteries; Lithium ion batteries; Nanowires

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APA (6th Edition):

Kohandehghan, A. (2014). Silicon and Germanium Nanowires Anode Materials for Lithium and Sodium-ion Batteries. (Doctoral Dissertation). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/c05741r81k

Chicago Manual of Style (16th Edition):

Kohandehghan, Alireza. “Silicon and Germanium Nanowires Anode Materials for Lithium and Sodium-ion Batteries.” 2014. Doctoral Dissertation, University of Alberta. Accessed April 19, 2019. https://era.library.ualberta.ca/files/c05741r81k.

MLA Handbook (7th Edition):

Kohandehghan, Alireza. “Silicon and Germanium Nanowires Anode Materials for Lithium and Sodium-ion Batteries.” 2014. Web. 19 Apr 2019.

Vancouver:

Kohandehghan A. Silicon and Germanium Nanowires Anode Materials for Lithium and Sodium-ion Batteries. [Internet] [Doctoral dissertation]. University of Alberta; 2014. [cited 2019 Apr 19]. Available from: https://era.library.ualberta.ca/files/c05741r81k.

Council of Science Editors:

Kohandehghan A. Silicon and Germanium Nanowires Anode Materials for Lithium and Sodium-ion Batteries. [Doctoral Dissertation]. University of Alberta; 2014. Available from: https://era.library.ualberta.ca/files/c05741r81k


Georgia Tech

29. Lourenco, Nelson Estacio. Mitigation of transient radiation effects in advanced silicon-germanium technologies.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The need for flexible, low-cost electronics in extreme environment applications has brought silicon-germanium (SiGe) technologies into the spotlight, but the viable long-term capability of these… (more)

Subjects/Keywords: SiGe; Radiation; Hardening; Silicon-germanium; Single-event effects

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APA (6th Edition):

Lourenco, N. E. (2016). Mitigation of transient radiation effects in advanced silicon-germanium technologies. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58187

Chicago Manual of Style (16th Edition):

Lourenco, Nelson Estacio. “Mitigation of transient radiation effects in advanced silicon-germanium technologies.” 2016. Doctoral Dissertation, Georgia Tech. Accessed April 19, 2019. http://hdl.handle.net/1853/58187.

MLA Handbook (7th Edition):

Lourenco, Nelson Estacio. “Mitigation of transient radiation effects in advanced silicon-germanium technologies.” 2016. Web. 19 Apr 2019.

Vancouver:

Lourenco NE. Mitigation of transient radiation effects in advanced silicon-germanium technologies. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/1853/58187.

Council of Science Editors:

Lourenco NE. Mitigation of transient radiation effects in advanced silicon-germanium technologies. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58187


University of Virginia

30. Baldridge, Tyson. Laser Sintering of Si-Ge Nanoparticles for Thermoelectric Materials.

Degree: PhD, 2013, University of Virginia

 Thermoelectric materials directly convert heat into electricity by generating a voltage from a temperature differential, without any moving parts or noise. Improving the efficiency of… (more)

Subjects/Keywords: thermoelectric; laser; sinter; silicon; germanium; nano-cluster; phonon

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Baldridge, T. (2013). Laser Sintering of Si-Ge Nanoparticles for Thermoelectric Materials. (Doctoral Dissertation). University of Virginia. Retrieved from http://libra.virginia.edu/catalog/libra-oa:2649

Chicago Manual of Style (16th Edition):

Baldridge, Tyson. “Laser Sintering of Si-Ge Nanoparticles for Thermoelectric Materials.” 2013. Doctoral Dissertation, University of Virginia. Accessed April 19, 2019. http://libra.virginia.edu/catalog/libra-oa:2649.

MLA Handbook (7th Edition):

Baldridge, Tyson. “Laser Sintering of Si-Ge Nanoparticles for Thermoelectric Materials.” 2013. Web. 19 Apr 2019.

Vancouver:

Baldridge T. Laser Sintering of Si-Ge Nanoparticles for Thermoelectric Materials. [Internet] [Doctoral dissertation]. University of Virginia; 2013. [cited 2019 Apr 19]. Available from: http://libra.virginia.edu/catalog/libra-oa:2649.

Council of Science Editors:

Baldridge T. Laser Sintering of Si-Ge Nanoparticles for Thermoelectric Materials. [Doctoral Dissertation]. University of Virginia; 2013. Available from: http://libra.virginia.edu/catalog/libra-oa:2649

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