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You searched for subject:(Silicon Carbide). Showing records 1 – 30 of 603 total matches.

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Rutgers University

1. DeLucca, Vincent Alexander, 1988-. Evaluating the effect of powder oxygen content on the microstructure and mechanical properties of silicon carbide densified by spark plasma sintering.

Degree: PhD, Materials Science and Engineering, 2017, Rutgers University

Silicon carbide (SiC) is an important material in industry due to its favorable mechanical, thermal, chemical, and electrical properties. While it has been mainly used… (more)

Subjects/Keywords: Silicon carbide

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APA (6th Edition):

DeLucca, Vincent Alexander, 1. (2017). Evaluating the effect of powder oxygen content on the microstructure and mechanical properties of silicon carbide densified by spark plasma sintering. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/55415/

Chicago Manual of Style (16th Edition):

DeLucca, Vincent Alexander, 1988-. “Evaluating the effect of powder oxygen content on the microstructure and mechanical properties of silicon carbide densified by spark plasma sintering.” 2017. Doctoral Dissertation, Rutgers University. Accessed September 16, 2019. https://rucore.libraries.rutgers.edu/rutgers-lib/55415/.

MLA Handbook (7th Edition):

DeLucca, Vincent Alexander, 1988-. “Evaluating the effect of powder oxygen content on the microstructure and mechanical properties of silicon carbide densified by spark plasma sintering.” 2017. Web. 16 Sep 2019.

Vancouver:

DeLucca, Vincent Alexander 1. Evaluating the effect of powder oxygen content on the microstructure and mechanical properties of silicon carbide densified by spark plasma sintering. [Internet] [Doctoral dissertation]. Rutgers University; 2017. [cited 2019 Sep 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/55415/.

Council of Science Editors:

DeLucca, Vincent Alexander 1. Evaluating the effect of powder oxygen content on the microstructure and mechanical properties of silicon carbide densified by spark plasma sintering. [Doctoral Dissertation]. Rutgers University; 2017. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/55415/


University of Southern California

2. Deng, Wangxue. Fabrication of silicon carbide sintered supports and silicon carbide membranes.

Degree: PhD, Chemical Engineering, 2013, University of Southern California

 Efficient separation of hydrogen (H₂) under high temperatures and pressures is important to the development of the clean-energy industry, and has been among the key… (more)

Subjects/Keywords: silicon carbide supports; silicon carbide membranes

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APA (6th Edition):

Deng, W. (2013). Fabrication of silicon carbide sintered supports and silicon carbide membranes. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/355292/rec/2700

Chicago Manual of Style (16th Edition):

Deng, Wangxue. “Fabrication of silicon carbide sintered supports and silicon carbide membranes.” 2013. Doctoral Dissertation, University of Southern California. Accessed September 16, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/355292/rec/2700.

MLA Handbook (7th Edition):

Deng, Wangxue. “Fabrication of silicon carbide sintered supports and silicon carbide membranes.” 2013. Web. 16 Sep 2019.

Vancouver:

Deng W. Fabrication of silicon carbide sintered supports and silicon carbide membranes. [Internet] [Doctoral dissertation]. University of Southern California; 2013. [cited 2019 Sep 16]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/355292/rec/2700.

Council of Science Editors:

Deng W. Fabrication of silicon carbide sintered supports and silicon carbide membranes. [Doctoral Dissertation]. University of Southern California; 2013. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/355292/rec/2700


San Jose State University

3. Brooks, Mitchell R. Erosion Behavior of CVD 3C Silicon Carbide in Inductively Coupled Plasmas.

Degree: MS, Chemical and Materials Engineering, 2010, San Jose State University

  An electrostatic, capacitively coupled Planar Ion Flux (PIF) probe has been developed as a sensor for use in high volume reactive ion etch (RIE)… (more)

Subjects/Keywords: Silicon Carbide; Sputter

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APA (6th Edition):

Brooks, M. R. (2010). Erosion Behavior of CVD 3C Silicon Carbide in Inductively Coupled Plasmas. (Masters Thesis). San Jose State University. Retrieved from https://doi.org/10.31979/etd.br28-wg3m ; https://scholarworks.sjsu.edu/etd_theses/3847

Chicago Manual of Style (16th Edition):

Brooks, Mitchell R. “Erosion Behavior of CVD 3C Silicon Carbide in Inductively Coupled Plasmas.” 2010. Masters Thesis, San Jose State University. Accessed September 16, 2019. https://doi.org/10.31979/etd.br28-wg3m ; https://scholarworks.sjsu.edu/etd_theses/3847.

MLA Handbook (7th Edition):

Brooks, Mitchell R. “Erosion Behavior of CVD 3C Silicon Carbide in Inductively Coupled Plasmas.” 2010. Web. 16 Sep 2019.

Vancouver:

Brooks MR. Erosion Behavior of CVD 3C Silicon Carbide in Inductively Coupled Plasmas. [Internet] [Masters thesis]. San Jose State University; 2010. [cited 2019 Sep 16]. Available from: https://doi.org/10.31979/etd.br28-wg3m ; https://scholarworks.sjsu.edu/etd_theses/3847.

Council of Science Editors:

Brooks MR. Erosion Behavior of CVD 3C Silicon Carbide in Inductively Coupled Plasmas. [Masters Thesis]. San Jose State University; 2010. Available from: https://doi.org/10.31979/etd.br28-wg3m ; https://scholarworks.sjsu.edu/etd_theses/3847


Rutgers University

4. Ward, Shawn H. Characterization of the mechanical response of silicon carbide fibers and wafers with emphasis on bending.

Degree: PhD, Materials Science and Engineering, 2018, Rutgers University

Bending – the basis of the bow and arrow, leaf springs, and one of the most common modes of failure – has been studied for… (more)

Subjects/Keywords: Flexure; Silicon carbide

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APA (6th Edition):

Ward, S. H. (2018). Characterization of the mechanical response of silicon carbide fibers and wafers with emphasis on bending. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/59272/

Chicago Manual of Style (16th Edition):

Ward, Shawn H. “Characterization of the mechanical response of silicon carbide fibers and wafers with emphasis on bending.” 2018. Doctoral Dissertation, Rutgers University. Accessed September 16, 2019. https://rucore.libraries.rutgers.edu/rutgers-lib/59272/.

MLA Handbook (7th Edition):

Ward, Shawn H. “Characterization of the mechanical response of silicon carbide fibers and wafers with emphasis on bending.” 2018. Web. 16 Sep 2019.

Vancouver:

Ward SH. Characterization of the mechanical response of silicon carbide fibers and wafers with emphasis on bending. [Internet] [Doctoral dissertation]. Rutgers University; 2018. [cited 2019 Sep 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/59272/.

Council of Science Editors:

Ward SH. Characterization of the mechanical response of silicon carbide fibers and wafers with emphasis on bending. [Doctoral Dissertation]. Rutgers University; 2018. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/59272/


Rice University

5. Hart, Amelia HS Church. Novel Three-Dimensional Silicon Carbide Nano-Structures.

Degree: PhD, Engineering, 2017, Rice University

Silicon carbide nanotubes have been found to have the same excellent mechanical properties in extreme thermal and oxidative environments as bulk silicon carbide, but with… (more)

Subjects/Keywords: Silicon Carbide; Silicon Carbide Nanotubes; Silicon Carbide Nanowires; Carbon Nanotubes

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APA (6th Edition):

Hart, A. H. C. (2017). Novel Three-Dimensional Silicon Carbide Nano-Structures. (Doctoral Dissertation). Rice University. Retrieved from http://hdl.handle.net/1911/95617

Chicago Manual of Style (16th Edition):

Hart, Amelia HS Church. “Novel Three-Dimensional Silicon Carbide Nano-Structures.” 2017. Doctoral Dissertation, Rice University. Accessed September 16, 2019. http://hdl.handle.net/1911/95617.

MLA Handbook (7th Edition):

Hart, Amelia HS Church. “Novel Three-Dimensional Silicon Carbide Nano-Structures.” 2017. Web. 16 Sep 2019.

Vancouver:

Hart AHC. Novel Three-Dimensional Silicon Carbide Nano-Structures. [Internet] [Doctoral dissertation]. Rice University; 2017. [cited 2019 Sep 16]. Available from: http://hdl.handle.net/1911/95617.

Council of Science Editors:

Hart AHC. Novel Three-Dimensional Silicon Carbide Nano-Structures. [Doctoral Dissertation]. Rice University; 2017. Available from: http://hdl.handle.net/1911/95617


University of Utah

6. Newman, Devon K. Boule shaping of single crystal silicon carbide by wire electrical discharge machining.

Degree: MS;, Mechanical Engineering;, 2010, University of Utah

 Wire electric discharge machining (WEDM) has proven to be a useful technology in the processing of semiconductor materials for micro-electronics and MEMS applications. The technology… (more)

Subjects/Keywords: Boule; Carbide; Silicon; WEDM

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APA (6th Edition):

Newman, D. K. (2010). Boule shaping of single crystal silicon carbide by wire electrical discharge machining. (Masters Thesis). University of Utah. Retrieved from http://content.lib.utah.edu/cdm/singleitem/collection/etd2/id/1490/rec/169

Chicago Manual of Style (16th Edition):

Newman, Devon K. “Boule shaping of single crystal silicon carbide by wire electrical discharge machining.” 2010. Masters Thesis, University of Utah. Accessed September 16, 2019. http://content.lib.utah.edu/cdm/singleitem/collection/etd2/id/1490/rec/169.

MLA Handbook (7th Edition):

Newman, Devon K. “Boule shaping of single crystal silicon carbide by wire electrical discharge machining.” 2010. Web. 16 Sep 2019.

Vancouver:

Newman DK. Boule shaping of single crystal silicon carbide by wire electrical discharge machining. [Internet] [Masters thesis]. University of Utah; 2010. [cited 2019 Sep 16]. Available from: http://content.lib.utah.edu/cdm/singleitem/collection/etd2/id/1490/rec/169.

Council of Science Editors:

Newman DK. Boule shaping of single crystal silicon carbide by wire electrical discharge machining. [Masters Thesis]. University of Utah; 2010. Available from: http://content.lib.utah.edu/cdm/singleitem/collection/etd2/id/1490/rec/169


Nelson Mandela Metropolitan University

7. Olivier, Ezra Jacobus. Analysis of the extended defects in 3C-SiC.

Degree: MSc, Faculty of Science, 2008, Nelson Mandela Metropolitan University

 The dissertation focuses on the analysis of the extended defects present in as-grown and proton bombarded β-SiC (annealed and unannealed) grown by chemical vapour deposition… (more)

Subjects/Keywords: Crystals  – Defects; Crystallography; Silicon carbide

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APA (6th Edition):

Olivier, E. J. (2008). Analysis of the extended defects in 3C-SiC. (Masters Thesis). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/730

Chicago Manual of Style (16th Edition):

Olivier, Ezra Jacobus. “Analysis of the extended defects in 3C-SiC.” 2008. Masters Thesis, Nelson Mandela Metropolitan University. Accessed September 16, 2019. http://hdl.handle.net/10948/730.

MLA Handbook (7th Edition):

Olivier, Ezra Jacobus. “Analysis of the extended defects in 3C-SiC.” 2008. Web. 16 Sep 2019.

Vancouver:

Olivier EJ. Analysis of the extended defects in 3C-SiC. [Internet] [Masters thesis]. Nelson Mandela Metropolitan University; 2008. [cited 2019 Sep 16]. Available from: http://hdl.handle.net/10948/730.

Council of Science Editors:

Olivier EJ. Analysis of the extended defects in 3C-SiC. [Masters Thesis]. Nelson Mandela Metropolitan University; 2008. Available from: http://hdl.handle.net/10948/730


Nelson Mandela Metropolitan University

8. Ndzane, Nolufefe Muriel. Electron microscopy characterisation of polycrystalline silicon carbide.

Degree: MSc, Faculty of Science, 2014, Nelson Mandela Metropolitan University

 This dissertation focuses on an electron microscopy investigation of the microstructure of SiC layers in TRISO coated particles deposited by chemical vapour deposition under different… (more)

Subjects/Keywords: Electron microscopy; Silicon carbide

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APA (6th Edition):

Ndzane, N. M. (2014). Electron microscopy characterisation of polycrystalline silicon carbide. (Masters Thesis). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/d1020634

Chicago Manual of Style (16th Edition):

Ndzane, Nolufefe Muriel. “Electron microscopy characterisation of polycrystalline silicon carbide.” 2014. Masters Thesis, Nelson Mandela Metropolitan University. Accessed September 16, 2019. http://hdl.handle.net/10948/d1020634.

MLA Handbook (7th Edition):

Ndzane, Nolufefe Muriel. “Electron microscopy characterisation of polycrystalline silicon carbide.” 2014. Web. 16 Sep 2019.

Vancouver:

Ndzane NM. Electron microscopy characterisation of polycrystalline silicon carbide. [Internet] [Masters thesis]. Nelson Mandela Metropolitan University; 2014. [cited 2019 Sep 16]. Available from: http://hdl.handle.net/10948/d1020634.

Council of Science Editors:

Ndzane NM. Electron microscopy characterisation of polycrystalline silicon carbide. [Masters Thesis]. Nelson Mandela Metropolitan University; 2014. Available from: http://hdl.handle.net/10948/d1020634


Nelson Mandela Metropolitan University

9. O'Connell, Jacques Herman. Characterization of hydrogen and helium implanted silicon carbide.

Degree: Faculty of Science, 2009, Nelson Mandela Metropolitan University

 This dissertation focuses on the characterization of hydrogen implanted 3C-SiC and helium implanted 6H-SiC and the interaction of silver and palladium with the SiC. The… (more)

Subjects/Keywords: Silicon carbide; Hydrogen; Helium

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APA (6th Edition):

O'Connell, J. H. (2009). Characterization of hydrogen and helium implanted silicon carbide. (Thesis). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/979

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

O'Connell, Jacques Herman. “Characterization of hydrogen and helium implanted silicon carbide.” 2009. Thesis, Nelson Mandela Metropolitan University. Accessed September 16, 2019. http://hdl.handle.net/10948/979.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

O'Connell, Jacques Herman. “Characterization of hydrogen and helium implanted silicon carbide.” 2009. Web. 16 Sep 2019.

Vancouver:

O'Connell JH. Characterization of hydrogen and helium implanted silicon carbide. [Internet] [Thesis]. Nelson Mandela Metropolitan University; 2009. [cited 2019 Sep 16]. Available from: http://hdl.handle.net/10948/979.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

O'Connell JH. Characterization of hydrogen and helium implanted silicon carbide. [Thesis]. Nelson Mandela Metropolitan University; 2009. Available from: http://hdl.handle.net/10948/979

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Hong Kong

10. Zhao, Tianqi. Catalytic formation of polycyclic aromatic hydrocarbons from acetylene over silicon carbide.

Degree: M. Phil., 2014, University of Hong Kong

In this research, silicon carbide (SiC) has been confirmed to be catalytically active for the formation of polycyclic aromatic hydrocarbons (PAHs) from acetylene (C2H2). Aromatization… (more)

Subjects/Keywords: Silicon carbide; Acetylene; Hydrocarbons - Synthesis

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APA (6th Edition):

Zhao, T. (2014). Catalytic formation of polycyclic aromatic hydrocarbons from acetylene over silicon carbide. (Masters Thesis). University of Hong Kong. Retrieved from Zhao, T. [趙天騏]. (2014). Catalytic formation of polycyclic aromatic hydrocarbons from acetylene over silicon carbide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5388030 ; http://dx.doi.org/10.5353/th_b5388030 ; http://hdl.handle.net/10722/208605

Chicago Manual of Style (16th Edition):

Zhao, Tianqi. “Catalytic formation of polycyclic aromatic hydrocarbons from acetylene over silicon carbide.” 2014. Masters Thesis, University of Hong Kong. Accessed September 16, 2019. Zhao, T. [趙天騏]. (2014). Catalytic formation of polycyclic aromatic hydrocarbons from acetylene over silicon carbide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5388030 ; http://dx.doi.org/10.5353/th_b5388030 ; http://hdl.handle.net/10722/208605.

MLA Handbook (7th Edition):

Zhao, Tianqi. “Catalytic formation of polycyclic aromatic hydrocarbons from acetylene over silicon carbide.” 2014. Web. 16 Sep 2019.

Vancouver:

Zhao T. Catalytic formation of polycyclic aromatic hydrocarbons from acetylene over silicon carbide. [Internet] [Masters thesis]. University of Hong Kong; 2014. [cited 2019 Sep 16]. Available from: Zhao, T. [趙天騏]. (2014). Catalytic formation of polycyclic aromatic hydrocarbons from acetylene over silicon carbide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5388030 ; http://dx.doi.org/10.5353/th_b5388030 ; http://hdl.handle.net/10722/208605.

Council of Science Editors:

Zhao T. Catalytic formation of polycyclic aromatic hydrocarbons from acetylene over silicon carbide. [Masters Thesis]. University of Hong Kong; 2014. Available from: Zhao, T. [趙天騏]. (2014). Catalytic formation of polycyclic aromatic hydrocarbons from acetylene over silicon carbide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5388030 ; http://dx.doi.org/10.5353/th_b5388030 ; http://hdl.handle.net/10722/208605


University of Southern California

11. Khademi, Mahdi. Exploring properties of silicon-carbide nanotubes and their composites with polymers.

Degree: PhD, Chemical Engineering, 2017, University of Southern California

 We have utilized atomistic modeling and extensive molecular dynamics (MD) simulation to study and explore various properties of fluids in silicon‐carbide nanotubes (SiCNTs), and in… (more)

Subjects/Keywords: silicon carbide; molecular dynamic; nanotube

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APA (6th Edition):

Khademi, M. (2017). Exploring properties of silicon-carbide nanotubes and their composites with polymers. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/560771/rec/2656

Chicago Manual of Style (16th Edition):

Khademi, Mahdi. “Exploring properties of silicon-carbide nanotubes and their composites with polymers.” 2017. Doctoral Dissertation, University of Southern California. Accessed September 16, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/560771/rec/2656.

MLA Handbook (7th Edition):

Khademi, Mahdi. “Exploring properties of silicon-carbide nanotubes and their composites with polymers.” 2017. Web. 16 Sep 2019.

Vancouver:

Khademi M. Exploring properties of silicon-carbide nanotubes and their composites with polymers. [Internet] [Doctoral dissertation]. University of Southern California; 2017. [cited 2019 Sep 16]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/560771/rec/2656.

Council of Science Editors:

Khademi M. Exploring properties of silicon-carbide nanotubes and their composites with polymers. [Doctoral Dissertation]. University of Southern California; 2017. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/560771/rec/2656


Montana State University

12. Suiter, Raymond Clayton. Silicon carbide synthesis using high-sulphur petroleum fluid coke and Montana silica.

Degree: College of Engineering, 1965, Montana State University

Subjects/Keywords: Silicon carbide.

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APA (6th Edition):

Suiter, R. C. (1965). Silicon carbide synthesis using high-sulphur petroleum fluid coke and Montana silica. (Thesis). Montana State University. Retrieved from https://scholarworks.montana.edu/xmlui/handle/1/4588

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Suiter, Raymond Clayton. “Silicon carbide synthesis using high-sulphur petroleum fluid coke and Montana silica.” 1965. Thesis, Montana State University. Accessed September 16, 2019. https://scholarworks.montana.edu/xmlui/handle/1/4588.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Suiter, Raymond Clayton. “Silicon carbide synthesis using high-sulphur petroleum fluid coke and Montana silica.” 1965. Web. 16 Sep 2019.

Vancouver:

Suiter RC. Silicon carbide synthesis using high-sulphur petroleum fluid coke and Montana silica. [Internet] [Thesis]. Montana State University; 1965. [cited 2019 Sep 16]. Available from: https://scholarworks.montana.edu/xmlui/handle/1/4588.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Suiter RC. Silicon carbide synthesis using high-sulphur petroleum fluid coke and Montana silica. [Thesis]. Montana State University; 1965. Available from: https://scholarworks.montana.edu/xmlui/handle/1/4588

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

13. Paul, James Ian. Joining of silicon carbide for accident tolerant PWR fuel cladding.

Degree: 2017, University of Manchester

 Following two previous nuclear reactor accidents involving light water reactors, there is a renewed interest in accident tolerant fuels. These accident tolerant fuels should not… (more)

Subjects/Keywords: SiC; Silicon; Carbide; Joining; Deposition

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APA (6th Edition):

Paul, J. I. (2017). Joining of silicon carbide for accident tolerant PWR fuel cladding. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:309135

Chicago Manual of Style (16th Edition):

Paul, James Ian. “Joining of silicon carbide for accident tolerant PWR fuel cladding.” 2017. Doctoral Dissertation, University of Manchester. Accessed September 16, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:309135.

MLA Handbook (7th Edition):

Paul, James Ian. “Joining of silicon carbide for accident tolerant PWR fuel cladding.” 2017. Web. 16 Sep 2019.

Vancouver:

Paul JI. Joining of silicon carbide for accident tolerant PWR fuel cladding. [Internet] [Doctoral dissertation]. University of Manchester; 2017. [cited 2019 Sep 16]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:309135.

Council of Science Editors:

Paul JI. Joining of silicon carbide for accident tolerant PWR fuel cladding. [Doctoral Dissertation]. University of Manchester; 2017. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:309135


University of Houston

14. -9726-0030. A Medium Voltage Cascaded Multi-level Converter with Isolated High Frequency Link Using SiC Switching Devices.

Degree: Electrical and Computer Engineering, Department of, 2016, University of Houston

 In this thesis, a new medium voltage multi-level power converter using low voltage SiC devices that would result in an overall efficiency improvement in harnessing… (more)

Subjects/Keywords: Multi-level; Silicon Carbide

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APA (6th Edition):

-9726-0030. (2016). A Medium Voltage Cascaded Multi-level Converter with Isolated High Frequency Link Using SiC Switching Devices. (Thesis). University of Houston. Retrieved from http://hdl.handle.net/10657/3530

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

-9726-0030. “A Medium Voltage Cascaded Multi-level Converter with Isolated High Frequency Link Using SiC Switching Devices.” 2016. Thesis, University of Houston. Accessed September 16, 2019. http://hdl.handle.net/10657/3530.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

-9726-0030. “A Medium Voltage Cascaded Multi-level Converter with Isolated High Frequency Link Using SiC Switching Devices.” 2016. Web. 16 Sep 2019.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-9726-0030. A Medium Voltage Cascaded Multi-level Converter with Isolated High Frequency Link Using SiC Switching Devices. [Internet] [Thesis]. University of Houston; 2016. [cited 2019 Sep 16]. Available from: http://hdl.handle.net/10657/3530.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

-9726-0030. A Medium Voltage Cascaded Multi-level Converter with Isolated High Frequency Link Using SiC Switching Devices. [Thesis]. University of Houston; 2016. Available from: http://hdl.handle.net/10657/3530

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation


Cornell University

15. Campbell, Dorr. 2-D Electronic Materials: Epitaxial Growth Of Graphene On 6H-Silicon Carbide (0001) .

Degree: 2015, Cornell University

 Graphene holds great promise as a material for high-speed electronics, especially as Si technology approaches its performance limits. Growth of epitaxial graphene by thermal decomposition… (more)

Subjects/Keywords: epitaxial graphene; 6H-silicon carbide

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APA (6th Edition):

Campbell, D. (2015). 2-D Electronic Materials: Epitaxial Growth Of Graphene On 6H-Silicon Carbide (0001) . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/39451

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Campbell, Dorr. “2-D Electronic Materials: Epitaxial Growth Of Graphene On 6H-Silicon Carbide (0001) .” 2015. Thesis, Cornell University. Accessed September 16, 2019. http://hdl.handle.net/1813/39451.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Campbell, Dorr. “2-D Electronic Materials: Epitaxial Growth Of Graphene On 6H-Silicon Carbide (0001) .” 2015. Web. 16 Sep 2019.

Vancouver:

Campbell D. 2-D Electronic Materials: Epitaxial Growth Of Graphene On 6H-Silicon Carbide (0001) . [Internet] [Thesis]. Cornell University; 2015. [cited 2019 Sep 16]. Available from: http://hdl.handle.net/1813/39451.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Campbell D. 2-D Electronic Materials: Epitaxial Growth Of Graphene On 6H-Silicon Carbide (0001) . [Thesis]. Cornell University; 2015. Available from: http://hdl.handle.net/1813/39451

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Latrobe University

16. Stojanov, Petar. Non-basal plane Silicon Carbide surfaces and their use as templates in the formation of dimensionally confined noble metal overlayers.

Degree: PhD, 2011, Latrobe University

Thesis (Ph.D.) - La Trobe University, 2011

Submission note: "A thesis submitted in total fulfillment of the requirements for the degree of Doctor of Philosophy… (more)

Subjects/Keywords: Superconductors.; Silicon carbide  – Electric properties.

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APA (6th Edition):

Stojanov, P. (2011). Non-basal plane Silicon Carbide surfaces and their use as templates in the formation of dimensionally confined noble metal overlayers. (Doctoral Dissertation). Latrobe University. Retrieved from http://hdl.handle.net/1959.9/513048

Chicago Manual of Style (16th Edition):

Stojanov, Petar. “Non-basal plane Silicon Carbide surfaces and their use as templates in the formation of dimensionally confined noble metal overlayers.” 2011. Doctoral Dissertation, Latrobe University. Accessed September 16, 2019. http://hdl.handle.net/1959.9/513048.

MLA Handbook (7th Edition):

Stojanov, Petar. “Non-basal plane Silicon Carbide surfaces and their use as templates in the formation of dimensionally confined noble metal overlayers.” 2011. Web. 16 Sep 2019.

Vancouver:

Stojanov P. Non-basal plane Silicon Carbide surfaces and their use as templates in the formation of dimensionally confined noble metal overlayers. [Internet] [Doctoral dissertation]. Latrobe University; 2011. [cited 2019 Sep 16]. Available from: http://hdl.handle.net/1959.9/513048.

Council of Science Editors:

Stojanov P. Non-basal plane Silicon Carbide surfaces and their use as templates in the formation of dimensionally confined noble metal overlayers. [Doctoral Dissertation]. Latrobe University; 2011. Available from: http://hdl.handle.net/1959.9/513048


Penn State University

17. ZHOU, HAONAN. RAPID SILICON CARBIDE CRYSTAL GROWTH WITH HIGH POWER LASER HEATING METHOD.

Degree: 2017, Penn State University

 This research presents an ultra-fast procedure to grow silicon carbide crystal with the size up to 50 m from Nano size powder. By using high… (more)

Subjects/Keywords: High power laser; silicon carbide

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APA (6th Edition):

ZHOU, H. (2017). RAPID SILICON CARBIDE CRYSTAL GROWTH WITH HIGH POWER LASER HEATING METHOD. (Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/14145hzz5130

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

ZHOU, HAONAN. “RAPID SILICON CARBIDE CRYSTAL GROWTH WITH HIGH POWER LASER HEATING METHOD.” 2017. Thesis, Penn State University. Accessed September 16, 2019. https://etda.libraries.psu.edu/catalog/14145hzz5130.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

ZHOU, HAONAN. “RAPID SILICON CARBIDE CRYSTAL GROWTH WITH HIGH POWER LASER HEATING METHOD.” 2017. Web. 16 Sep 2019.

Vancouver:

ZHOU H. RAPID SILICON CARBIDE CRYSTAL GROWTH WITH HIGH POWER LASER HEATING METHOD. [Internet] [Thesis]. Penn State University; 2017. [cited 2019 Sep 16]. Available from: https://etda.libraries.psu.edu/catalog/14145hzz5130.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

ZHOU H. RAPID SILICON CARBIDE CRYSTAL GROWTH WITH HIGH POWER LASER HEATING METHOD. [Thesis]. Penn State University; 2017. Available from: https://etda.libraries.psu.edu/catalog/14145hzz5130

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of North Texas

18. Maneshian, Mohammad Hassan. The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates.

Degree: 2011, University of North Texas

 Graphene has attracted significant research attention for next generation of semiconductor devices due to its high electron mobility and compatibility with planar semiconductor processing. In… (more)

Subjects/Keywords: transistors; Graphene; silicon carbide

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APA (6th Edition):

Maneshian, M. H. (2011). The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc68009/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Maneshian, Mohammad Hassan. “The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates.” 2011. Thesis, University of North Texas. Accessed September 16, 2019. https://digital.library.unt.edu/ark:/67531/metadc68009/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Maneshian, Mohammad Hassan. “The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates.” 2011. Web. 16 Sep 2019.

Vancouver:

Maneshian MH. The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates. [Internet] [Thesis]. University of North Texas; 2011. [cited 2019 Sep 16]. Available from: https://digital.library.unt.edu/ark:/67531/metadc68009/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Maneshian MH. The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates. [Thesis]. University of North Texas; 2011. Available from: https://digital.library.unt.edu/ark:/67531/metadc68009/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rutgers University

19. Xu, Yi, 1986-. Structure and chemistry of defect passivation at the interface between silicon dioxide and silicon carbide.

Degree: PhD, Chemistry and Chemical Biology, 2014, Rutgers University

Silicon carbide (SiC) is a wide bandgap semiconductor which has material properties well-suited for high-power, high-temperature electronics applications. The performance of SiC transistors is limited… (more)

Subjects/Keywords: Silicon carbide – Electric properties

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APA (6th Edition):

Xu, Yi, 1. (2014). Structure and chemistry of defect passivation at the interface between silicon dioxide and silicon carbide. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/45578/

Chicago Manual of Style (16th Edition):

Xu, Yi, 1986-. “Structure and chemistry of defect passivation at the interface between silicon dioxide and silicon carbide.” 2014. Doctoral Dissertation, Rutgers University. Accessed September 16, 2019. https://rucore.libraries.rutgers.edu/rutgers-lib/45578/.

MLA Handbook (7th Edition):

Xu, Yi, 1986-. “Structure and chemistry of defect passivation at the interface between silicon dioxide and silicon carbide.” 2014. Web. 16 Sep 2019.

Vancouver:

Xu, Yi 1. Structure and chemistry of defect passivation at the interface between silicon dioxide and silicon carbide. [Internet] [Doctoral dissertation]. Rutgers University; 2014. [cited 2019 Sep 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/45578/.

Council of Science Editors:

Xu, Yi 1. Structure and chemistry of defect passivation at the interface between silicon dioxide and silicon carbide. [Doctoral Dissertation]. Rutgers University; 2014. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/45578/


Rutgers University

20. Amarasinghe, Voshadhi Pansilu. Single crystalline silicon carbide thin film exfoliation for power device applications.

Degree: PhD, Chemistry and Chemical Biology, 2015, Rutgers University

Silicon carbide (SiC) is a wide-band gap material used in high power and high current electronic applications because of its high thermal conductivity and high… (more)

Subjects/Keywords: Silicon carbide; Thin films

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APA (6th Edition):

Amarasinghe, V. P. (2015). Single crystalline silicon carbide thin film exfoliation for power device applications. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/48381/

Chicago Manual of Style (16th Edition):

Amarasinghe, Voshadhi Pansilu. “Single crystalline silicon carbide thin film exfoliation for power device applications.” 2015. Doctoral Dissertation, Rutgers University. Accessed September 16, 2019. https://rucore.libraries.rutgers.edu/rutgers-lib/48381/.

MLA Handbook (7th Edition):

Amarasinghe, Voshadhi Pansilu. “Single crystalline silicon carbide thin film exfoliation for power device applications.” 2015. Web. 16 Sep 2019.

Vancouver:

Amarasinghe VP. Single crystalline silicon carbide thin film exfoliation for power device applications. [Internet] [Doctoral dissertation]. Rutgers University; 2015. [cited 2019 Sep 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/48381/.

Council of Science Editors:

Amarasinghe VP. Single crystalline silicon carbide thin film exfoliation for power device applications. [Doctoral Dissertation]. Rutgers University; 2015. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/48381/


Rutgers University

21. Xu, Can, 1987-. Ion beam analysis of novel materials and devices involving silicon carbide and bismuth selenide.

Degree: PhD, Physics and Astronomy, 2015, Rutgers University

The properties of single crystals, thin films and their surfaces and interfaces have a critical impact on the electrical performance of devices. Analysis of the… (more)

Subjects/Keywords: Silicon carbide; Thin films

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APA (6th Edition):

Xu, Can, 1. (2015). Ion beam analysis of novel materials and devices involving silicon carbide and bismuth selenide. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/48726/

Chicago Manual of Style (16th Edition):

Xu, Can, 1987-. “Ion beam analysis of novel materials and devices involving silicon carbide and bismuth selenide.” 2015. Doctoral Dissertation, Rutgers University. Accessed September 16, 2019. https://rucore.libraries.rutgers.edu/rutgers-lib/48726/.

MLA Handbook (7th Edition):

Xu, Can, 1987-. “Ion beam analysis of novel materials and devices involving silicon carbide and bismuth selenide.” 2015. Web. 16 Sep 2019.

Vancouver:

Xu, Can 1. Ion beam analysis of novel materials and devices involving silicon carbide and bismuth selenide. [Internet] [Doctoral dissertation]. Rutgers University; 2015. [cited 2019 Sep 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/48726/.

Council of Science Editors:

Xu, Can 1. Ion beam analysis of novel materials and devices involving silicon carbide and bismuth selenide. [Doctoral Dissertation]. Rutgers University; 2015. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/48726/


Rutgers University

22. Aygüzer Yaşar, Zeynep, 1988-. Producing silicon carbide boron carbide composites by spark plasma sintering.

Degree: PhD, Materials Science and Engineering, 2019, Rutgers University

Silicon carbide has a high melting point, high mechanical and elastic properties and excellent chemical stability. Boron carbide is a non-metallic material with exceptional physical… (more)

Subjects/Keywords: Silicon carbide; Sintering; Borides

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APA (6th Edition):

Aygüzer Yaşar, Zeynep, 1. (2019). Producing silicon carbide boron carbide composites by spark plasma sintering. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/59941/

Chicago Manual of Style (16th Edition):

Aygüzer Yaşar, Zeynep, 1988-. “Producing silicon carbide boron carbide composites by spark plasma sintering.” 2019. Doctoral Dissertation, Rutgers University. Accessed September 16, 2019. https://rucore.libraries.rutgers.edu/rutgers-lib/59941/.

MLA Handbook (7th Edition):

Aygüzer Yaşar, Zeynep, 1988-. “Producing silicon carbide boron carbide composites by spark plasma sintering.” 2019. Web. 16 Sep 2019.

Vancouver:

Aygüzer Yaşar, Zeynep 1. Producing silicon carbide boron carbide composites by spark plasma sintering. [Internet] [Doctoral dissertation]. Rutgers University; 2019. [cited 2019 Sep 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/59941/.

Council of Science Editors:

Aygüzer Yaşar, Zeynep 1. Producing silicon carbide boron carbide composites by spark plasma sintering. [Doctoral Dissertation]. Rutgers University; 2019. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/59941/


University of Arizona

23. Harris, Richard Charles Allen, 1940-. THE STUDY OF METAL-OXIDE - SEMICONDUCTOR CAPACITORS ON 6H ALPHA-SILICON CARBIDE SEMICONDUCTING MATERIAL .

Degree: 1972, University of Arizona

Subjects/Keywords: Silicon carbide.

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APA (6th Edition):

Harris, Richard Charles Allen, 1. (1972). THE STUDY OF METAL-OXIDE - SEMICONDUCTOR CAPACITORS ON 6H ALPHA-SILICON CARBIDE SEMICONDUCTING MATERIAL . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/290294

Chicago Manual of Style (16th Edition):

Harris, Richard Charles Allen, 1940-. “THE STUDY OF METAL-OXIDE - SEMICONDUCTOR CAPACITORS ON 6H ALPHA-SILICON CARBIDE SEMICONDUCTING MATERIAL .” 1972. Doctoral Dissertation, University of Arizona. Accessed September 16, 2019. http://hdl.handle.net/10150/290294.

MLA Handbook (7th Edition):

Harris, Richard Charles Allen, 1940-. “THE STUDY OF METAL-OXIDE - SEMICONDUCTOR CAPACITORS ON 6H ALPHA-SILICON CARBIDE SEMICONDUCTING MATERIAL .” 1972. Web. 16 Sep 2019.

Vancouver:

Harris, Richard Charles Allen 1. THE STUDY OF METAL-OXIDE - SEMICONDUCTOR CAPACITORS ON 6H ALPHA-SILICON CARBIDE SEMICONDUCTING MATERIAL . [Internet] [Doctoral dissertation]. University of Arizona; 1972. [cited 2019 Sep 16]. Available from: http://hdl.handle.net/10150/290294.

Council of Science Editors:

Harris, Richard Charles Allen 1. THE STUDY OF METAL-OXIDE - SEMICONDUCTOR CAPACITORS ON 6H ALPHA-SILICON CARBIDE SEMICONDUCTING MATERIAL . [Doctoral Dissertation]. University of Arizona; 1972. Available from: http://hdl.handle.net/10150/290294


University of California – Berkeley

24. Alper, John Paul. Silicon and Silicon Carbide Nanowires: Synthesis, Characterization, Modification, and Application as Micro-Supercapacitor Electrodes.

Degree: Chemical Engineering, 2014, University of California – Berkeley

 For applications in mobile and remote sensing platforms, microsupercapacitors are attractive energy storage devices due to their robust lifetimes and high specific power capacity. Utilization… (more)

Subjects/Keywords: Chemical engineering; microsupercapacitor; nanowires; silicon; silicon carbide

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APA (6th Edition):

Alper, J. P. (2014). Silicon and Silicon Carbide Nanowires: Synthesis, Characterization, Modification, and Application as Micro-Supercapacitor Electrodes. (Thesis). University of California – Berkeley. Retrieved from http://www.escholarship.org/uc/item/3k9463pp

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Alper, John Paul. “Silicon and Silicon Carbide Nanowires: Synthesis, Characterization, Modification, and Application as Micro-Supercapacitor Electrodes.” 2014. Thesis, University of California – Berkeley. Accessed September 16, 2019. http://www.escholarship.org/uc/item/3k9463pp.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Alper, John Paul. “Silicon and Silicon Carbide Nanowires: Synthesis, Characterization, Modification, and Application as Micro-Supercapacitor Electrodes.” 2014. Web. 16 Sep 2019.

Vancouver:

Alper JP. Silicon and Silicon Carbide Nanowires: Synthesis, Characterization, Modification, and Application as Micro-Supercapacitor Electrodes. [Internet] [Thesis]. University of California – Berkeley; 2014. [cited 2019 Sep 16]. Available from: http://www.escholarship.org/uc/item/3k9463pp.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Alper JP. Silicon and Silicon Carbide Nanowires: Synthesis, Characterization, Modification, and Application as Micro-Supercapacitor Electrodes. [Thesis]. University of California – Berkeley; 2014. Available from: http://www.escholarship.org/uc/item/3k9463pp

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

25. Chinn, Richard E. Thermal Processing of Injection-Molded Silicon Carbide.

Degree: PhD, Materials Science, 2015, Oregon State University

Silicon carbide is an important and versatile nonoxide ceramic. Powder injection molding (PIM) is a method of high-speed fabrication of complex near-net shapes of SiC… (more)

Subjects/Keywords: silicon carbide; Silicon carbide

…1 2 Powder Injection Molded Silicon Carbide… …40 Kinetics of Thermal Debinding of Injection Molded Silicon Carbide… …62 The Effects of Sintering Additives on the Properties of Silicon Carbide, Part I… …108 The Effects of Sintering Additives on the Properties of Silicon Carbide, Part II… …159 Microstructural Development of Green Micro-Machined, Injection-Molded Silicon Carbide… 

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APA (6th Edition):

Chinn, R. E. (2015). Thermal Processing of Injection-Molded Silicon Carbide. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/56310

Chicago Manual of Style (16th Edition):

Chinn, Richard E. “Thermal Processing of Injection-Molded Silicon Carbide.” 2015. Doctoral Dissertation, Oregon State University. Accessed September 16, 2019. http://hdl.handle.net/1957/56310.

MLA Handbook (7th Edition):

Chinn, Richard E. “Thermal Processing of Injection-Molded Silicon Carbide.” 2015. Web. 16 Sep 2019.

Vancouver:

Chinn RE. Thermal Processing of Injection-Molded Silicon Carbide. [Internet] [Doctoral dissertation]. Oregon State University; 2015. [cited 2019 Sep 16]. Available from: http://hdl.handle.net/1957/56310.

Council of Science Editors:

Chinn RE. Thermal Processing of Injection-Molded Silicon Carbide. [Doctoral Dissertation]. Oregon State University; 2015. Available from: http://hdl.handle.net/1957/56310


University of Utah

26. Kaur, Sarbjit. R-curve behavior of SiC.

Degree: MS;, Materials Science & Engineering;, 2009, University of Utah

 R-curve behavior of four different silicon carbide (SiC) materials was assessed using an indentation/strength technique. Two developmental grades, with similar microstructures and chemistries but different… (more)

Subjects/Keywords: Silicon carbide; Damage resistant ceramics; Fracture toughness

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APA (6th Edition):

Kaur, S. (2009). R-curve behavior of SiC. (Masters Thesis). University of Utah. Retrieved from http://content.lib.utah.edu/cdm/singleitem/collection/etd2/id/1578/rec/951

Chicago Manual of Style (16th Edition):

Kaur, Sarbjit. “R-curve behavior of SiC.” 2009. Masters Thesis, University of Utah. Accessed September 16, 2019. http://content.lib.utah.edu/cdm/singleitem/collection/etd2/id/1578/rec/951.

MLA Handbook (7th Edition):

Kaur, Sarbjit. “R-curve behavior of SiC.” 2009. Web. 16 Sep 2019.

Vancouver:

Kaur S. R-curve behavior of SiC. [Internet] [Masters thesis]. University of Utah; 2009. [cited 2019 Sep 16]. Available from: http://content.lib.utah.edu/cdm/singleitem/collection/etd2/id/1578/rec/951.

Council of Science Editors:

Kaur S. R-curve behavior of SiC. [Masters Thesis]. University of Utah; 2009. Available from: http://content.lib.utah.edu/cdm/singleitem/collection/etd2/id/1578/rec/951


Georgia Tech

27. Choudhury, Arnab. Process development for a silicon carbide micro four-point probe.

Degree: MS, Mechanical Engineering, 2003, Georgia Tech

Subjects/Keywords: Silicon carbide; Semiconductors

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APA (6th Edition):

Choudhury, A. (2003). Process development for a silicon carbide micro four-point probe. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/5397

Chicago Manual of Style (16th Edition):

Choudhury, Arnab. “Process development for a silicon carbide micro four-point probe.” 2003. Masters Thesis, Georgia Tech. Accessed September 16, 2019. http://hdl.handle.net/1853/5397.

MLA Handbook (7th Edition):

Choudhury, Arnab. “Process development for a silicon carbide micro four-point probe.” 2003. Web. 16 Sep 2019.

Vancouver:

Choudhury A. Process development for a silicon carbide micro four-point probe. [Internet] [Masters thesis]. Georgia Tech; 2003. [cited 2019 Sep 16]. Available from: http://hdl.handle.net/1853/5397.

Council of Science Editors:

Choudhury A. Process development for a silicon carbide micro four-point probe. [Masters Thesis]. Georgia Tech; 2003. Available from: http://hdl.handle.net/1853/5397


Georgia Tech

28. Wang, Feng. Surface/interface modification and characterization of C-face epitaxial graphene.

Degree: PhD, Physics, 2015, Georgia Tech

 Graphene has been one of the most interesting and widely investigated materials in the past decade. Because of its high mobility, high current density, inherent… (more)

Subjects/Keywords: SiC; Graphene; Graphite; Silicon carbide; Thin film

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APA (6th Edition):

Wang, F. (2015). Surface/interface modification and characterization of C-face epitaxial graphene. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53855

Chicago Manual of Style (16th Edition):

Wang, Feng. “Surface/interface modification and characterization of C-face epitaxial graphene.” 2015. Doctoral Dissertation, Georgia Tech. Accessed September 16, 2019. http://hdl.handle.net/1853/53855.

MLA Handbook (7th Edition):

Wang, Feng. “Surface/interface modification and characterization of C-face epitaxial graphene.” 2015. Web. 16 Sep 2019.

Vancouver:

Wang F. Surface/interface modification and characterization of C-face epitaxial graphene. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2019 Sep 16]. Available from: http://hdl.handle.net/1853/53855.

Council of Science Editors:

Wang F. Surface/interface modification and characterization of C-face epitaxial graphene. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/53855


University of Manchester

29. Clarke, Alex. The Extraction and Study of Interstellar Grains.

Degree: 2018, University of Manchester

 The aim of this thesis is to comprehensively analyse presolar silicon carbide (SiC) grains from several primitive meteorites in order to investigate their complicated history.… (more)

Subjects/Keywords: presolar grains; NanoSIMS; TOF-SIMS; silicon carbide

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APA (6th Edition):

Clarke, A. (2018). The Extraction and Study of Interstellar Grains. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:315376

Chicago Manual of Style (16th Edition):

Clarke, Alex. “The Extraction and Study of Interstellar Grains.” 2018. Doctoral Dissertation, University of Manchester. Accessed September 16, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:315376.

MLA Handbook (7th Edition):

Clarke, Alex. “The Extraction and Study of Interstellar Grains.” 2018. Web. 16 Sep 2019.

Vancouver:

Clarke A. The Extraction and Study of Interstellar Grains. [Internet] [Doctoral dissertation]. University of Manchester; 2018. [cited 2019 Sep 16]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:315376.

Council of Science Editors:

Clarke A. The Extraction and Study of Interstellar Grains. [Doctoral Dissertation]. University of Manchester; 2018. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:315376


Oregon State University

30. Setiowati, Utami. Synthesis of nanosized SiC powder from SiO-CH₄ reaction.

Degree: MS, Chemical Engineering, 1996, Oregon State University

Subjects/Keywords: Silicon carbide  – Synthesis

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APA (6th Edition):

Setiowati, U. (1996). Synthesis of nanosized SiC powder from SiO-CH₄ reaction. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/34278

Chicago Manual of Style (16th Edition):

Setiowati, Utami. “Synthesis of nanosized SiC powder from SiO-CH₄ reaction.” 1996. Masters Thesis, Oregon State University. Accessed September 16, 2019. http://hdl.handle.net/1957/34278.

MLA Handbook (7th Edition):

Setiowati, Utami. “Synthesis of nanosized SiC powder from SiO-CH₄ reaction.” 1996. Web. 16 Sep 2019.

Vancouver:

Setiowati U. Synthesis of nanosized SiC powder from SiO-CH₄ reaction. [Internet] [Masters thesis]. Oregon State University; 1996. [cited 2019 Sep 16]. Available from: http://hdl.handle.net/1957/34278.

Council of Science Editors:

Setiowati U. Synthesis of nanosized SiC powder from SiO-CH₄ reaction. [Masters Thesis]. Oregon State University; 1996. Available from: http://hdl.handle.net/1957/34278

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