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You searched for subject:(Silicidation). Showing records 1 – 3 of 3 total matches.

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1. Delattre, Roger. Etude et simulation de la siliciuration du cobalt en couches ultraminces pour la microélectronique : cinétique de formation, contraintes, texture et redistribution des dopants : Computer assisted recognition of written words to facilitate speech in non-verbal children with autism.

Degree: Docteur es, Matière condensée et Nanoscience, 2013, Aix Marseille Université

Ce travail de thèse consiste en l'étude des mécanismes de formation de CoSi2 par diffraction X in-situ et son intégration dans un simulateur commercial TCAD (Technology Computer Aided Design). Nous avons observé que la formation du CoSi2 est contrôlée par la germination dans les premiers instants de la réaction où les germes croissent latéralement jusqu'à leur coalescence. Cette dernière marque la modification du mécanisme de croissance qui est alors contrôlée par la diffusion. En fin de réaction, la source de CoSi s'épuise en formant des îlots en surface du CoSi2 et ralentit sa vitesse de formation. Nos études ont permis d'établir des cinétiques de croissance pour ces différents régimes. Nous avons également montré que pour l'épaisseur la plus fine de notre étude, la croissance de CoSi2 n'est contrôlée que par celle des germes. La cinétique de formation de CoSi2 a été étudiée en fonction du dopage du substrat.L'évolution des contraintes des films de CoSi2 est également analysée. Ce dernier croit en compression.Nous avons développé un modèle TCAD en deux dimensions permettant de réaliser la croissance séquentielle des siliciures de cobalt et de reproduire avec un bon accord les cinétiques de croissances de CoSi2.Les redistributions de l'arsenic, du phosphore et du bore aux interfaces CoSi/Si et CoSi2/Si sont également analysées en prévision de la simulation électrique de composants siliciurés.Dans ce travail nous apportons une meilleure compréhension des mécanismes de croissance du CoSi2. Nous proposons un outil de simulation prédictif pour la formation des siliciures de cobalt qui apporte donc une aide à l'optimisation du procédé SALICIDE (Self Aligned siLICIDE).

The aim of this thesis is to study the growth of CoSi2 thin films using in-situ x-ray diffraction and to model it in a commercial TCAD (Technology Computer Aided Design) simulator.. We observed that the first instant of the reaction is limited by nucleation where the CoSi2 nuclei laterally grow until their coalescence. Then, the homogeneous CoSi2 layer grows by a diffusion limited mechanism. At the end of the reaction, the CoSi source run out and decrease the CoSi2 formation rate. Kinetics of these growth behaviors has been quantified. We also observed that the thinnest CoSi2 layer of our study only the CoSi2 nuclei growth take place.Influence of dopants on the CoSi2 kinetics of formation has also been studied. Arsenic decreases the CoSi2 rate of formation. However Boron does not impact the growth of CoSi2.During CoSi2 growth, stress is monitored using x-ray diffraction showing that cobalt disilicide forms in compression.From these experimental results, we developed a TCAD model in one dimension in order to simulate the sequential growth of cobalt silicides. Kinetics of formation of CoSi2 is also in good agreement with our results.The application in two dimensions of this model reproduces the morphology of 2D silicided structures as the lack of silicide under the spacers.Redistributions of Arsenic, Boron and Phosphorus are also studied in expectation of…

Advisors/Committee Members: Thomas, Olivier (thesis director).

Subjects/Keywords: TCAD; SALICIDE; Siliciuration; Cobalt; Cinétique; Contrainte; Redistribution de dopant; TCAD; SALICIDE; Silicidation; Cobalt; Kinetics; Stress; Doping redistribution

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APA (6th Edition):

Delattre, R. (2013). Etude et simulation de la siliciuration du cobalt en couches ultraminces pour la microélectronique : cinétique de formation, contraintes, texture et redistribution des dopants : Computer assisted recognition of written words to facilitate speech in non-verbal children with autism. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2013AIXM4322

Chicago Manual of Style (16th Edition):

Delattre, Roger. “Etude et simulation de la siliciuration du cobalt en couches ultraminces pour la microélectronique : cinétique de formation, contraintes, texture et redistribution des dopants : Computer assisted recognition of written words to facilitate speech in non-verbal children with autism.” 2013. Doctoral Dissertation, Aix Marseille Université. Accessed December 13, 2019. http://www.theses.fr/2013AIXM4322.

MLA Handbook (7th Edition):

Delattre, Roger. “Etude et simulation de la siliciuration du cobalt en couches ultraminces pour la microélectronique : cinétique de formation, contraintes, texture et redistribution des dopants : Computer assisted recognition of written words to facilitate speech in non-verbal children with autism.” 2013. Web. 13 Dec 2019.

Vancouver:

Delattre R. Etude et simulation de la siliciuration du cobalt en couches ultraminces pour la microélectronique : cinétique de formation, contraintes, texture et redistribution des dopants : Computer assisted recognition of written words to facilitate speech in non-verbal children with autism. [Internet] [Doctoral dissertation]. Aix Marseille Université 2013. [cited 2019 Dec 13]. Available from: http://www.theses.fr/2013AIXM4322.

Council of Science Editors:

Delattre R. Etude et simulation de la siliciuration du cobalt en couches ultraminces pour la microélectronique : cinétique de formation, contraintes, texture et redistribution des dopants : Computer assisted recognition of written words to facilitate speech in non-verbal children with autism. [Doctoral Dissertation]. Aix Marseille Université 2013. Available from: http://www.theses.fr/2013AIXM4322

2. TOH SUEY LI. Study of strain relaxation in semiconductors by convergent beam electron diffraction.

Degree: 2006, National University of Singapore

Subjects/Keywords: convergent beam electron diffraction; uniaxial and biaxial strain; etch-stop layer; trench structures; silicidation; SiGe/Si heterostructures

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APA (6th Edition):

LI, T. S. (2006). Study of strain relaxation in semiconductors by convergent beam electron diffraction. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/15501

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

LI, TOH SUEY. “Study of strain relaxation in semiconductors by convergent beam electron diffraction.” 2006. Thesis, National University of Singapore. Accessed December 13, 2019. http://scholarbank.nus.edu.sg/handle/10635/15501.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

LI, TOH SUEY. “Study of strain relaxation in semiconductors by convergent beam electron diffraction.” 2006. Web. 13 Dec 2019.

Vancouver:

LI TS. Study of strain relaxation in semiconductors by convergent beam electron diffraction. [Internet] [Thesis]. National University of Singapore; 2006. [cited 2019 Dec 13]. Available from: http://scholarbank.nus.edu.sg/handle/10635/15501.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

LI TS. Study of strain relaxation in semiconductors by convergent beam electron diffraction. [Thesis]. National University of Singapore; 2006. Available from: http://scholarbank.nus.edu.sg/handle/10635/15501

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université Catholique de Louvain

3. Parvais, Bertrand. Nonlinear devices characterization and micromachining techniques for RF integrated circuits.

Degree: 2004, Université Catholique de Louvain

The present work is dedicated to the development of high performance integrated circuits for wireless communications, by acting of three different levels: technologies, devices, and circuits. Silicon-on-Insulator (SOI) CMOS technology is used in the frame of this work. Micromachining technologies are also investigated for the fabrication of three-dimensional tunable capacitors. The reliability of micromachined thin-film devices is improved by the coating of silanes in both liquid- and vapor-phases. Since in telecommunication applications, distortion is responsible for the generation of spurious frequency bands, the linearity behavior of different SOI transistors is analyzed. The validity range of the existing low-frequency nonlinear characterization methods is discussed. New simple techniques valid at both low- and high-frequencies, are provided, based on the integral function method and on the Volterra series. Finally, the design of a crucial nonlinear circuit, the voltage-controlled oscillator, is introduced. The describing function formalism is used to evaluate the oscillation amplitude and is embedded in a design methodology. The frequency tuning by SOI varactors is analyzed in both small- and large-signal regimes.

(FSA 3) – UCL, 2004

Advisors/Committee Members: UCL - FSA/ELEC - Département d'électricité, Schreurs, Dominique, Wambacq, Piet, Vanhoenacker, Danielle, Cerdeira, Antonio, Legat, Jean-Didier, Raskin, Jean-Pierre, Flandre, Denis.

Subjects/Keywords: Intermodulation; Surface micromachining; Dry etching; Silanes; SOI; Release; Polysilicon; ICP; Plasma etching; Hydrophobicity; LNA; RIE; Low-noise amplifier; IFM; Stress; Capillarity; Linearity; Microsystem; VCO; Silicidation; Oscillators; Large-signal network analyzer; Describing functions; Integral function method; Silicon-on-insulator; Distortion; CMOS; Circuit design; MEMS; RF IC; Stiction; Volterra; Phase noise; Varactor; Tunable capacitor

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Parvais, B. (2004). Nonlinear devices characterization and micromachining techniques for RF integrated circuits. (Thesis). Université Catholique de Louvain. Retrieved from http://hdl.handle.net/2078.1/5008

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Parvais, Bertrand. “Nonlinear devices characterization and micromachining techniques for RF integrated circuits.” 2004. Thesis, Université Catholique de Louvain. Accessed December 13, 2019. http://hdl.handle.net/2078.1/5008.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Parvais, Bertrand. “Nonlinear devices characterization and micromachining techniques for RF integrated circuits.” 2004. Web. 13 Dec 2019.

Vancouver:

Parvais B. Nonlinear devices characterization and micromachining techniques for RF integrated circuits. [Internet] [Thesis]. Université Catholique de Louvain; 2004. [cited 2019 Dec 13]. Available from: http://hdl.handle.net/2078.1/5008.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Parvais B. Nonlinear devices characterization and micromachining techniques for RF integrated circuits. [Thesis]. Université Catholique de Louvain; 2004. Available from: http://hdl.handle.net/2078.1/5008

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.