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You searched for subject:(SiGe). Showing records 1 – 30 of 241 total matches.

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1. Wachter, Mason Thomas. On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform.

Degree: MS, Electrical and Computer Engineering, 2017, Georgia Tech

 The objective of this thesis is to analyze the effects of total ionizing dose radiation on transient response of the Silicon-Germanium BiCMOS platform. Accumulation of… (more)

Subjects/Keywords: SiGe

…research presented in this thesis focuses on the radiation effects on SiliconGermanium (SiGe… …x28;CMOS), and SiGe Heterojunction Bipolar Transistor (SiGe HBTs) devices… …This document is organized as follows: Chapter 1 provides an introduction to SiGe BiCMOS… …technologies, SiGe fabrication techniques, and methods of operation for both HBTs, and CMOS devices… …environment and the radiation effects that SiGe BiCMOS electronics are exposed to for space based… 

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APA (6th Edition):

Wachter, M. T. (2017). On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58740

Chicago Manual of Style (16th Edition):

Wachter, Mason Thomas. “On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform.” 2017. Masters Thesis, Georgia Tech. Accessed May 29, 2020. http://hdl.handle.net/1853/58740.

MLA Handbook (7th Edition):

Wachter, Mason Thomas. “On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform.” 2017. Web. 29 May 2020.

Vancouver:

Wachter MT. On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform. [Internet] [Masters thesis]. Georgia Tech; 2017. [cited 2020 May 29]. Available from: http://hdl.handle.net/1853/58740.

Council of Science Editors:

Wachter MT. On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform. [Masters Thesis]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/58740


Penn State University

2. Zhang, Xi. SIZE EFFECTS IN ALLOY AND HETEROSTRUCTURED.

Degree: PhD, Materials Science and Engineering, 2009, Penn State University

 This dissertation focuses on studies of the size-dependent properties of Si1-xGex alloy and heterostructured nanowires grown by the vapor-liquid-solid (VLS) mechanism. Chemical vapor deposition (CVD)… (more)

Subjects/Keywords: nanowires; SiGe; size effect diffusion

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APA (6th Edition):

Zhang, X. (2009). SIZE EFFECTS IN ALLOY AND HETEROSTRUCTURED. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/9805

Chicago Manual of Style (16th Edition):

Zhang, Xi. “SIZE EFFECTS IN ALLOY AND HETEROSTRUCTURED.” 2009. Doctoral Dissertation, Penn State University. Accessed May 29, 2020. https://etda.libraries.psu.edu/catalog/9805.

MLA Handbook (7th Edition):

Zhang, Xi. “SIZE EFFECTS IN ALLOY AND HETEROSTRUCTURED.” 2009. Web. 29 May 2020.

Vancouver:

Zhang X. SIZE EFFECTS IN ALLOY AND HETEROSTRUCTURED. [Internet] [Doctoral dissertation]. Penn State University; 2009. [cited 2020 May 29]. Available from: https://etda.libraries.psu.edu/catalog/9805.

Council of Science Editors:

Zhang X. SIZE EFFECTS IN ALLOY AND HETEROSTRUCTURED. [Doctoral Dissertation]. Penn State University; 2009. Available from: https://etda.libraries.psu.edu/catalog/9805


Texas A&M University

3. Gwak, Yunki. Thermal Transport Measurement of Silicon-Germanium Nanowires.

Degree: 2010, Texas A&M University

 Thermal properties of one dimensional nanostructures are of interest for thermoelectric energy conversion. Thermoelectric efficiency is related to non dimensional thermoelectric figure of merit, ZT=S2(more)

Subjects/Keywords: SiGe; nanowire; thermal conductivity

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APA (6th Edition):

Gwak, Y. (2010). Thermal Transport Measurement of Silicon-Germanium Nanowires. (Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-889

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gwak, Yunki. “Thermal Transport Measurement of Silicon-Germanium Nanowires.” 2010. Thesis, Texas A&M University. Accessed May 29, 2020. http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-889.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gwak, Yunki. “Thermal Transport Measurement of Silicon-Germanium Nanowires.” 2010. Web. 29 May 2020.

Vancouver:

Gwak Y. Thermal Transport Measurement of Silicon-Germanium Nanowires. [Internet] [Thesis]. Texas A&M University; 2010. [cited 2020 May 29]. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-889.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gwak Y. Thermal Transport Measurement of Silicon-Germanium Nanowires. [Thesis]. Texas A&M University; 2010. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-889

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Boston College

4. Wang, Xiaowei. Thermoelectric property studies on nanostructured N-type Si-Ge Bulk Materials.

Degree: PhD, Physics, 2009, Boston College

SiGe alloys are the only proven thermoelectric materials in power generation devices operating above 600 °C and up to 1000 °C in heat conversion into… (more)

Subjects/Keywords: SiGe alloys

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APA (6th Edition):

Wang, X. (2009). Thermoelectric property studies on nanostructured N-type Si-Ge Bulk Materials. (Doctoral Dissertation). Boston College. Retrieved from http://dlib.bc.edu/islandora/object/bc-ir:101594

Chicago Manual of Style (16th Edition):

Wang, Xiaowei. “Thermoelectric property studies on nanostructured N-type Si-Ge Bulk Materials.” 2009. Doctoral Dissertation, Boston College. Accessed May 29, 2020. http://dlib.bc.edu/islandora/object/bc-ir:101594.

MLA Handbook (7th Edition):

Wang, Xiaowei. “Thermoelectric property studies on nanostructured N-type Si-Ge Bulk Materials.” 2009. Web. 29 May 2020.

Vancouver:

Wang X. Thermoelectric property studies on nanostructured N-type Si-Ge Bulk Materials. [Internet] [Doctoral dissertation]. Boston College; 2009. [cited 2020 May 29]. Available from: http://dlib.bc.edu/islandora/object/bc-ir:101594.

Council of Science Editors:

Wang X. Thermoelectric property studies on nanostructured N-type Si-Ge Bulk Materials. [Doctoral Dissertation]. Boston College; 2009. Available from: http://dlib.bc.edu/islandora/object/bc-ir:101594


Georgia Tech

5. Haugerud, Becca Mary. Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology.

Degree: MS, Electrical and Computer Engineering, 2005, Georgia Tech

 This work examines the effects of radiation and strain on silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. First, aspects of the various SiGe HBT… (more)

Subjects/Keywords: SiGe; BiCMOS

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APA (6th Edition):

Haugerud, B. M. (2005). Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/6952

Chicago Manual of Style (16th Edition):

Haugerud, Becca Mary. “Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology.” 2005. Masters Thesis, Georgia Tech. Accessed May 29, 2020. http://hdl.handle.net/1853/6952.

MLA Handbook (7th Edition):

Haugerud, Becca Mary. “Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology.” 2005. Web. 29 May 2020.

Vancouver:

Haugerud BM. Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology. [Internet] [Masters thesis]. Georgia Tech; 2005. [cited 2020 May 29]. Available from: http://hdl.handle.net/1853/6952.

Council of Science Editors:

Haugerud BM. Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology. [Masters Thesis]. Georgia Tech; 2005. Available from: http://hdl.handle.net/1853/6952


Georgia Tech

6. Wier, Brian R. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.

Degree: MS, Electrical and Computer Engineering, 2015, Georgia Tech

 This thesis describes the characterization and modeling of various hot carrier degradation mechanisms in silicon-germanium heterojunction bipolar transistors. An analysis of measured stress data and… (more)

Subjects/Keywords: Hot carrier; Reliability; SiGe HBT

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APA (6th Edition):

Wier, B. R. (2015). Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/60401

Chicago Manual of Style (16th Edition):

Wier, Brian R. “Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.” 2015. Masters Thesis, Georgia Tech. Accessed May 29, 2020. http://hdl.handle.net/1853/60401.

MLA Handbook (7th Edition):

Wier, Brian R. “Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.” 2015. Web. 29 May 2020.

Vancouver:

Wier BR. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. [Internet] [Masters thesis]. Georgia Tech; 2015. [cited 2020 May 29]. Available from: http://hdl.handle.net/1853/60401.

Council of Science Editors:

Wier BR. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. [Masters Thesis]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/60401


Georgia Tech

7. Ju, Inchan. A Study on Design Methodologies of Power Amplifiers Using SiGe BiCMOS Technologies.

Degree: PhD, Electrical and Computer Engineering, 2018, Georgia Tech

 The goal of the proposed research is to develop multiple design methodologies of power amplifiers (PAs) using silicon germanium (SiGe) heterojunction bipolar junction transistor (HBT)… (more)

Subjects/Keywords: Power amplifier; HBT; SiGe

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APA (6th Edition):

Ju, I. (2018). A Study on Design Methodologies of Power Amplifiers Using SiGe BiCMOS Technologies. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/61180

Chicago Manual of Style (16th Edition):

Ju, Inchan. “A Study on Design Methodologies of Power Amplifiers Using SiGe BiCMOS Technologies.” 2018. Doctoral Dissertation, Georgia Tech. Accessed May 29, 2020. http://hdl.handle.net/1853/61180.

MLA Handbook (7th Edition):

Ju, Inchan. “A Study on Design Methodologies of Power Amplifiers Using SiGe BiCMOS Technologies.” 2018. Web. 29 May 2020.

Vancouver:

Ju I. A Study on Design Methodologies of Power Amplifiers Using SiGe BiCMOS Technologies. [Internet] [Doctoral dissertation]. Georgia Tech; 2018. [cited 2020 May 29]. Available from: http://hdl.handle.net/1853/61180.

Council of Science Editors:

Ju I. A Study on Design Methodologies of Power Amplifiers Using SiGe BiCMOS Technologies. [Doctoral Dissertation]. Georgia Tech; 2018. Available from: http://hdl.handle.net/1853/61180


Université de Bordeaux I

8. Al-S'adi, Mahmoud. TCAD based SiGe HBT advanced architecture exploration : Prévision de la demande type ARIMA par agrégation.

Degree: Docteur es, Electronique, 2011, Université de Bordeaux I

Dans le but d’améliorer les transistors bipolaires TBH SiGe, nous proposons d’étudier l’impact de la contrainte mécanique sur leurs performances. En effet, cette contrainte permet… (more)

Subjects/Keywords: SiGe TBH; Bipolaire; Contrainte mécanique; SIGe HBT; Bipolar; Strain Technology

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APA (6th Edition):

Al-S'adi, M. (2011). TCAD based SiGe HBT advanced architecture exploration : Prévision de la demande type ARIMA par agrégation. (Doctoral Dissertation). Université de Bordeaux I. Retrieved from http://www.theses.fr/2011BOR14239

Chicago Manual of Style (16th Edition):

Al-S'adi, Mahmoud. “TCAD based SiGe HBT advanced architecture exploration : Prévision de la demande type ARIMA par agrégation.” 2011. Doctoral Dissertation, Université de Bordeaux I. Accessed May 29, 2020. http://www.theses.fr/2011BOR14239.

MLA Handbook (7th Edition):

Al-S'adi, Mahmoud. “TCAD based SiGe HBT advanced architecture exploration : Prévision de la demande type ARIMA par agrégation.” 2011. Web. 29 May 2020.

Vancouver:

Al-S'adi M. TCAD based SiGe HBT advanced architecture exploration : Prévision de la demande type ARIMA par agrégation. [Internet] [Doctoral dissertation]. Université de Bordeaux I; 2011. [cited 2020 May 29]. Available from: http://www.theses.fr/2011BOR14239.

Council of Science Editors:

Al-S'adi M. TCAD based SiGe HBT advanced architecture exploration : Prévision de la demande type ARIMA par agrégation. [Doctoral Dissertation]. Université de Bordeaux I; 2011. Available from: http://www.theses.fr/2011BOR14239

9. Mohamad, Blend. Electrical characterization of fully depleted SOI devices based on C-V measurements : Caractérisation électrique des dispositifs FDSOI établie par mesures C-V.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2017, Grenoble Alpes

Les technologies de films minces sur isolant apparaissent comme des solutions fiables pour la nano électronique. Elles permettent de dépasser les limites des technologies sur… (more)

Subjects/Keywords: Fdsoi; C-V; Si; SiGe; Fdsoi; C-V; Si; SiGe; 620

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APA (6th Edition):

Mohamad, B. (2017). Electrical characterization of fully depleted SOI devices based on C-V measurements : Caractérisation électrique des dispositifs FDSOI établie par mesures C-V. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2017GREAT001

Chicago Manual of Style (16th Edition):

Mohamad, Blend. “Electrical characterization of fully depleted SOI devices based on C-V measurements : Caractérisation électrique des dispositifs FDSOI établie par mesures C-V.” 2017. Doctoral Dissertation, Grenoble Alpes. Accessed May 29, 2020. http://www.theses.fr/2017GREAT001.

MLA Handbook (7th Edition):

Mohamad, Blend. “Electrical characterization of fully depleted SOI devices based on C-V measurements : Caractérisation électrique des dispositifs FDSOI établie par mesures C-V.” 2017. Web. 29 May 2020.

Vancouver:

Mohamad B. Electrical characterization of fully depleted SOI devices based on C-V measurements : Caractérisation électrique des dispositifs FDSOI établie par mesures C-V. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2017. [cited 2020 May 29]. Available from: http://www.theses.fr/2017GREAT001.

Council of Science Editors:

Mohamad B. Electrical characterization of fully depleted SOI devices based on C-V measurements : Caractérisation électrique des dispositifs FDSOI établie par mesures C-V. [Doctoral Dissertation]. Grenoble Alpes; 2017. Available from: http://www.theses.fr/2017GREAT001


Georgia Tech

10. Omprakash, Anup. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.

Degree: MS, Electrical and Computer Engineering, 2016, Georgia Tech

 The objective of this work is to characterize and investigate the effect of extreme environments, such as high temperature (up to 300^∘C) and radiation, on… (more)

Subjects/Keywords: SiGe; SiGe HBTs; High temperature; Total dose effects; Reliability; Thermal instability

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APA (6th Edition):

Omprakash, A. (2016). Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58195

Chicago Manual of Style (16th Edition):

Omprakash, Anup. “Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.” 2016. Masters Thesis, Georgia Tech. Accessed May 29, 2020. http://hdl.handle.net/1853/58195.

MLA Handbook (7th Edition):

Omprakash, Anup. “Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.” 2016. Web. 29 May 2020.

Vancouver:

Omprakash A. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. [Internet] [Masters thesis]. Georgia Tech; 2016. [cited 2020 May 29]. Available from: http://hdl.handle.net/1853/58195.

Council of Science Editors:

Omprakash A. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. [Masters Thesis]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58195


University of California – San Diego

11. Lin, Hsin-Chang. High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process.

Degree: Electrical Engineering (Elec Circ and Sys) and Cog Sci, 2015, University of California – San Diego

 This thesis first presents a fully-integrated 16-way power combining amplifier for 67-92 GHz applications in an advanced 90 nm silicon germanium (SiGe) HBT technology. The… (more)

Subjects/Keywords: Electrical engineering; CMOS; Millimeter-wave; SiGe; THz

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APA (6th Edition):

Lin, H. (2015). High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process. (Thesis). University of California – San Diego. Retrieved from http://www.escholarship.org/uc/item/4388n7zd

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Hsin-Chang. “High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process.” 2015. Thesis, University of California – San Diego. Accessed May 29, 2020. http://www.escholarship.org/uc/item/4388n7zd.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Hsin-Chang. “High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process.” 2015. Web. 29 May 2020.

Vancouver:

Lin H. High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process. [Internet] [Thesis]. University of California – San Diego; 2015. [cited 2020 May 29]. Available from: http://www.escholarship.org/uc/item/4388n7zd.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin H. High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process. [Thesis]. University of California – San Diego; 2015. Available from: http://www.escholarship.org/uc/item/4388n7zd

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

12. Du, Yan. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

SiGe source/drain technology has been sucessfully applied to bulk metal oxide semiconductor field effect transistors (MOSFETs). Both channel mobility and source/drain contact resistivity are substantially… (more)

Subjects/Keywords: nanowire; SiGe; Pt ALD; strain; CBED

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APA (6th Edition):

Du, Y. (2009). Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3433

Chicago Manual of Style (16th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Doctoral Dissertation, North Carolina State University. Accessed May 29, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3433.

MLA Handbook (7th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Web. 29 May 2020.

Vancouver:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2020 May 29]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433.

Council of Science Editors:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433


Vanderbilt University

13. Duan, Guoxing. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases has been evaluated. Negative bias irradiation leads to the worst-case degradation.… (more)

Subjects/Keywords: HfO2; SiGe; low frequency noise; NBTI; TID

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APA (6th Edition):

Duan, G. (2016). Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;

Chicago Manual of Style (16th Edition):

Duan, Guoxing. “Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed May 29, 2020. http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;.

MLA Handbook (7th Edition):

Duan, Guoxing. “Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.” 2016. Web. 29 May 2020.

Vancouver:

Duan G. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2020 May 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;.

Council of Science Editors:

Duan G. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;


University of New South Wales

14. Tsao, Chao-Yang. Fabrication and characterization of Ge thin films and Ge-rich SiGe alloys for photovoltaic applications.

Degree: Photovoltaics & Renewable Energy Engineering, 2011, University of New South Wales

 Germanium (Ge) thin films and Ge-rich silicon-germanium (SiGe) alloys have potential for lowering the manufacturing cost of photovoltaic (PV) devices especially in tandem solar cells.… (more)

Subjects/Keywords: Thin film; Germanium; SiGe alloy; Photovoltaic

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APA (6th Edition):

Tsao, C. (2011). Fabrication and characterization of Ge thin films and Ge-rich SiGe alloys for photovoltaic applications. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/51218 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9926/SOURCE1?view=true

Chicago Manual of Style (16th Edition):

Tsao, Chao-Yang. “Fabrication and characterization of Ge thin films and Ge-rich SiGe alloys for photovoltaic applications.” 2011. Doctoral Dissertation, University of New South Wales. Accessed May 29, 2020. http://handle.unsw.edu.au/1959.4/51218 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9926/SOURCE1?view=true.

MLA Handbook (7th Edition):

Tsao, Chao-Yang. “Fabrication and characterization of Ge thin films and Ge-rich SiGe alloys for photovoltaic applications.” 2011. Web. 29 May 2020.

Vancouver:

Tsao C. Fabrication and characterization of Ge thin films and Ge-rich SiGe alloys for photovoltaic applications. [Internet] [Doctoral dissertation]. University of New South Wales; 2011. [cited 2020 May 29]. Available from: http://handle.unsw.edu.au/1959.4/51218 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9926/SOURCE1?view=true.

Council of Science Editors:

Tsao C. Fabrication and characterization of Ge thin films and Ge-rich SiGe alloys for photovoltaic applications. [Doctoral Dissertation]. University of New South Wales; 2011. Available from: http://handle.unsw.edu.au/1959.4/51218 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9926/SOURCE1?view=true


Australian National University

15. Feng, Ruixing. Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ .

Degree: 2016, Australian National University

 It is widely accepted that when transistors are scaled beyond the 10-nm technology generation in the near future, Ge, or alternatively Si1-xGex will potentially replace… (more)

Subjects/Keywords: Si; Ge; SiGe; EXAFS; Hall Effect; DFT

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APA (6th Edition):

Feng, R. (2016). Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ . (Thesis). Australian National University. Retrieved from http://hdl.handle.net/1885/107100

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Feng, Ruixing. “Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ .” 2016. Thesis, Australian National University. Accessed May 29, 2020. http://hdl.handle.net/1885/107100.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Feng, Ruixing. “Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ .” 2016. Web. 29 May 2020.

Vancouver:

Feng R. Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ . [Internet] [Thesis]. Australian National University; 2016. [cited 2020 May 29]. Available from: http://hdl.handle.net/1885/107100.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Feng R. Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ . [Thesis]. Australian National University; 2016. Available from: http://hdl.handle.net/1885/107100

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arizona

16. Peckler, Lauren Tiffany. Analysis of In-Situ Shear and Normal Forces During Metal Cmp, Electrical Interface States of Sulfur-Passivated Sige Moscaps, and Reaction Kinetics of Pyrite Nanocrystal Purity .

Degree: 2018, University of Arizona

 The first study presented in this dissertation concerns the synthesis of pyrite (FeS2) nanocrystals (NC). Since 1980s, pyrite has been studied as a potential replacement… (more)

Subjects/Keywords: CMP; MOSCAP; passivation; pyrite; SiGe; tribology

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APA (6th Edition):

Peckler, L. T. (2018). Analysis of In-Situ Shear and Normal Forces During Metal Cmp, Electrical Interface States of Sulfur-Passivated Sige Moscaps, and Reaction Kinetics of Pyrite Nanocrystal Purity . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/628181

Chicago Manual of Style (16th Edition):

Peckler, Lauren Tiffany. “Analysis of In-Situ Shear and Normal Forces During Metal Cmp, Electrical Interface States of Sulfur-Passivated Sige Moscaps, and Reaction Kinetics of Pyrite Nanocrystal Purity .” 2018. Doctoral Dissertation, University of Arizona. Accessed May 29, 2020. http://hdl.handle.net/10150/628181.

MLA Handbook (7th Edition):

Peckler, Lauren Tiffany. “Analysis of In-Situ Shear and Normal Forces During Metal Cmp, Electrical Interface States of Sulfur-Passivated Sige Moscaps, and Reaction Kinetics of Pyrite Nanocrystal Purity .” 2018. Web. 29 May 2020.

Vancouver:

Peckler LT. Analysis of In-Situ Shear and Normal Forces During Metal Cmp, Electrical Interface States of Sulfur-Passivated Sige Moscaps, and Reaction Kinetics of Pyrite Nanocrystal Purity . [Internet] [Doctoral dissertation]. University of Arizona; 2018. [cited 2020 May 29]. Available from: http://hdl.handle.net/10150/628181.

Council of Science Editors:

Peckler LT. Analysis of In-Situ Shear and Normal Forces During Metal Cmp, Electrical Interface States of Sulfur-Passivated Sige Moscaps, and Reaction Kinetics of Pyrite Nanocrystal Purity . [Doctoral Dissertation]. University of Arizona; 2018. Available from: http://hdl.handle.net/10150/628181


Clemson University

17. Thompson, Daniel. Thermoelectric Properties of Silicon Germanium: An In-depth Study to the Reduction of Lattice Thermal Conductivity.

Degree: PhD, Physics, 2012, Clemson University

 Thermoelectric materials provide a solid state route for the direct conversion between thermal and electrical energy. Hence, thermal gradients can be used to generate power… (more)

Subjects/Keywords: SE SPS; SiGe; SPS; synthesis; thermoelectric; Physics

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APA (6th Edition):

Thompson, D. (2012). Thermoelectric Properties of Silicon Germanium: An In-depth Study to the Reduction of Lattice Thermal Conductivity. (Doctoral Dissertation). Clemson University. Retrieved from https://tigerprints.clemson.edu/all_dissertations/984

Chicago Manual of Style (16th Edition):

Thompson, Daniel. “Thermoelectric Properties of Silicon Germanium: An In-depth Study to the Reduction of Lattice Thermal Conductivity.” 2012. Doctoral Dissertation, Clemson University. Accessed May 29, 2020. https://tigerprints.clemson.edu/all_dissertations/984.

MLA Handbook (7th Edition):

Thompson, Daniel. “Thermoelectric Properties of Silicon Germanium: An In-depth Study to the Reduction of Lattice Thermal Conductivity.” 2012. Web. 29 May 2020.

Vancouver:

Thompson D. Thermoelectric Properties of Silicon Germanium: An In-depth Study to the Reduction of Lattice Thermal Conductivity. [Internet] [Doctoral dissertation]. Clemson University; 2012. [cited 2020 May 29]. Available from: https://tigerprints.clemson.edu/all_dissertations/984.

Council of Science Editors:

Thompson D. Thermoelectric Properties of Silicon Germanium: An In-depth Study to the Reduction of Lattice Thermal Conductivity. [Doctoral Dissertation]. Clemson University; 2012. Available from: https://tigerprints.clemson.edu/all_dissertations/984


Georgia Tech

18. Song, Ickhyun. Design of SIGE BICMOS RF building blocks for extreme-environment applications.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The objective of this research is to understand the behavior of radio-frequency (RF) circuits under extreme-environment condition and to investigate the potential mitigation solution for… (more)

Subjects/Keywords: SiGe; BiCMOS; HBT; RF; Extreme environment

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APA (6th Edition):

Song, I. (2016). Design of SIGE BICMOS RF building blocks for extreme-environment applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59139

Chicago Manual of Style (16th Edition):

Song, Ickhyun. “Design of SIGE BICMOS RF building blocks for extreme-environment applications.” 2016. Doctoral Dissertation, Georgia Tech. Accessed May 29, 2020. http://hdl.handle.net/1853/59139.

MLA Handbook (7th Edition):

Song, Ickhyun. “Design of SIGE BICMOS RF building blocks for extreme-environment applications.” 2016. Web. 29 May 2020.

Vancouver:

Song I. Design of SIGE BICMOS RF building blocks for extreme-environment applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 May 29]. Available from: http://hdl.handle.net/1853/59139.

Council of Science Editors:

Song I. Design of SIGE BICMOS RF building blocks for extreme-environment applications. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/59139


Georgia Tech

19. Ying, Hanbin. Collector current transport mechanisms in SiGE HBTs operating at cryogenic temperatures.

Degree: MS, Electrical and Computer Engineering, 2019, Georgia Tech

 Silicon germanium heterojunction bipolar transistors (SiGe HBTs) have recently gained attention due to their potential for use in quantum computing readout circuits. To serve such… (more)

Subjects/Keywords: SiGe HBTs; Cryogenic; Quantum computing; Scaling

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APA (6th Edition):

Ying, H. (2019). Collector current transport mechanisms in SiGE HBTs operating at cryogenic temperatures. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/61292

Chicago Manual of Style (16th Edition):

Ying, Hanbin. “Collector current transport mechanisms in SiGE HBTs operating at cryogenic temperatures.” 2019. Masters Thesis, Georgia Tech. Accessed May 29, 2020. http://hdl.handle.net/1853/61292.

MLA Handbook (7th Edition):

Ying, Hanbin. “Collector current transport mechanisms in SiGE HBTs operating at cryogenic temperatures.” 2019. Web. 29 May 2020.

Vancouver:

Ying H. Collector current transport mechanisms in SiGE HBTs operating at cryogenic temperatures. [Internet] [Masters thesis]. Georgia Tech; 2019. [cited 2020 May 29]. Available from: http://hdl.handle.net/1853/61292.

Council of Science Editors:

Ying H. Collector current transport mechanisms in SiGE HBTs operating at cryogenic temperatures. [Masters Thesis]. Georgia Tech; 2019. Available from: http://hdl.handle.net/1853/61292


Université de Grenoble

20. Denneulin, Thibaud. Holographie électronique en champ sombre : une technique fiable pour mesurer des déformations dans les dispositifs de la microélectronique : Dark-field electron holography : a reliable technique for measuring strain in microelectronic devices.

Degree: Docteur es, Nanophysique, 2012, Université de Grenoble

Les contraintes font maintenant partie des “ boosters ” de la microélectronique au même titre que le SOI (silicium sur isolant) ou le couple grille… (more)

Subjects/Keywords: Holographie; Contraintes; Déformations; Microscopie électronique; SiGe; Transistors; Holography; Stress; Strain; Electron microscopy; SiGe; Transistors; 621

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APA (6th Edition):

Denneulin, T. (2012). Holographie électronique en champ sombre : une technique fiable pour mesurer des déformations dans les dispositifs de la microélectronique : Dark-field electron holography : a reliable technique for measuring strain in microelectronic devices. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2012GRENY089

Chicago Manual of Style (16th Edition):

Denneulin, Thibaud. “Holographie électronique en champ sombre : une technique fiable pour mesurer des déformations dans les dispositifs de la microélectronique : Dark-field electron holography : a reliable technique for measuring strain in microelectronic devices.” 2012. Doctoral Dissertation, Université de Grenoble. Accessed May 29, 2020. http://www.theses.fr/2012GRENY089.

MLA Handbook (7th Edition):

Denneulin, Thibaud. “Holographie électronique en champ sombre : une technique fiable pour mesurer des déformations dans les dispositifs de la microélectronique : Dark-field electron holography : a reliable technique for measuring strain in microelectronic devices.” 2012. Web. 29 May 2020.

Vancouver:

Denneulin T. Holographie électronique en champ sombre : une technique fiable pour mesurer des déformations dans les dispositifs de la microélectronique : Dark-field electron holography : a reliable technique for measuring strain in microelectronic devices. [Internet] [Doctoral dissertation]. Université de Grenoble; 2012. [cited 2020 May 29]. Available from: http://www.theses.fr/2012GRENY089.

Council of Science Editors:

Denneulin T. Holographie électronique en champ sombre : une technique fiable pour mesurer des déformations dans les dispositifs de la microélectronique : Dark-field electron holography : a reliable technique for measuring strain in microelectronic devices. [Doctoral Dissertation]. Université de Grenoble; 2012. Available from: http://www.theses.fr/2012GRENY089

21. Czornomaz, Lukas. Filière technologique hybride InGaAs/SiGe pour applications CMOS : Hybrid InGaAs/SiGe technology platform for CMOS applications.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2016, Grenoble Alpes

Les materiaux à forte mobilité comme l’InGaAs et le SiGe sont considérés comme des candidats potentiels pour remplacer le Si dans les circuits CMOS futurs.… (more)

Subjects/Keywords: CMOS; InGaAs; SiGe; Mosfet; Collage; Celo; CMOS; InGaAs; SiGe; Mosfet; Bonding; Celo; 620

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APA (6th Edition):

Czornomaz, L. (2016). Filière technologique hybride InGaAs/SiGe pour applications CMOS : Hybrid InGaAs/SiGe technology platform for CMOS applications. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2016GREAT013

Chicago Manual of Style (16th Edition):

Czornomaz, Lukas. “Filière technologique hybride InGaAs/SiGe pour applications CMOS : Hybrid InGaAs/SiGe technology platform for CMOS applications.” 2016. Doctoral Dissertation, Grenoble Alpes. Accessed May 29, 2020. http://www.theses.fr/2016GREAT013.

MLA Handbook (7th Edition):

Czornomaz, Lukas. “Filière technologique hybride InGaAs/SiGe pour applications CMOS : Hybrid InGaAs/SiGe technology platform for CMOS applications.” 2016. Web. 29 May 2020.

Vancouver:

Czornomaz L. Filière technologique hybride InGaAs/SiGe pour applications CMOS : Hybrid InGaAs/SiGe technology platform for CMOS applications. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2016. [cited 2020 May 29]. Available from: http://www.theses.fr/2016GREAT013.

Council of Science Editors:

Czornomaz L. Filière technologique hybride InGaAs/SiGe pour applications CMOS : Hybrid InGaAs/SiGe technology platform for CMOS applications. [Doctoral Dissertation]. Grenoble Alpes; 2016. Available from: http://www.theses.fr/2016GREAT013

22. Rozé, Fabien. Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies : Etude de l’oxydation thermique du SiGe pour application aux technologies CMOS FD-SOI avancées.

Degree: Docteur es, Matériaux, Mécanique, Génie civil, Electrochimie, 2018, Grenoble Alpes

La réduction continue des dimensions des transistors depuis les années 60 est à l’origine de l’explosion des usages de l’électronique. Toutefois, la réduction des dimensions… (more)

Subjects/Keywords: Cmos; SiGe; Sgoi; Contrainte; Condensation; Oxydation thermique; Cmos; SiGe; Sgoi; Strain; Condensation; Thermal oxidation; 530

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APA (6th Edition):

Rozé, F. (2018). Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies : Etude de l’oxydation thermique du SiGe pour application aux technologies CMOS FD-SOI avancées. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAI018

Chicago Manual of Style (16th Edition):

Rozé, Fabien. “Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies : Etude de l’oxydation thermique du SiGe pour application aux technologies CMOS FD-SOI avancées.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed May 29, 2020. http://www.theses.fr/2018GREAI018.

MLA Handbook (7th Edition):

Rozé, Fabien. “Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies : Etude de l’oxydation thermique du SiGe pour application aux technologies CMOS FD-SOI avancées.” 2018. Web. 29 May 2020.

Vancouver:

Rozé F. Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies : Etude de l’oxydation thermique du SiGe pour application aux technologies CMOS FD-SOI avancées. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2020 May 29]. Available from: http://www.theses.fr/2018GREAI018.

Council of Science Editors:

Rozé F. Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies : Etude de l’oxydation thermique du SiGe pour application aux technologies CMOS FD-SOI avancées. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAI018


NSYSU

23. Liu, Yi-heng. Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 Current silicon solar cell is developing towards ultra-thin feature for cost lowering, recombination suppressing and potential flexible applications. In this work, we examine the viability… (more)

Subjects/Keywords: InSe; SiGe buffer layer; CIGSe; CGSe; CISe; Heterojunction solar cell; AFORS-HET; Amorphous SiGe alloy

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APA (6th Edition):

Liu, Y. (2017). Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0818117-023545

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Yi-heng. “Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells.” 2017. Thesis, NSYSU. Accessed May 29, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0818117-023545.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Yi-heng. “Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells.” 2017. Web. 29 May 2020.

Vancouver:

Liu Y. Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells. [Internet] [Thesis]. NSYSU; 2017. [cited 2020 May 29]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0818117-023545.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu Y. Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0818117-023545

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

24. Rosales, Marc. Study of SiGe HPT for radio over fiber applications : Analyse de phototransistor bipolaire à hétérojonction SiGe/Si pour application radio-sur-fibre.

Degree: Docteur es, Electronique, Optronique et Systèmes, 2014, Université Paris-Est

Ce travail de thèse présente le développement de phototransistors bipolaires à hétérojonction (HPT) SiGe/Si mis en œuvre dans une technologie de processus 80GHz SiGe bipolaire… (more)

Subjects/Keywords: SiGe HPT; Uwb; Phototransistors; Radio sur fibre; SiGe HPT; Uwb; Phototransistors; Radio over Fiber; RoF

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APA (6th Edition):

Rosales, M. (2014). Study of SiGe HPT for radio over fiber applications : Analyse de phototransistor bipolaire à hétérojonction SiGe/Si pour application radio-sur-fibre. (Doctoral Dissertation). Université Paris-Est. Retrieved from http://www.theses.fr/2014PEST1101

Chicago Manual of Style (16th Edition):

Rosales, Marc. “Study of SiGe HPT for radio over fiber applications : Analyse de phototransistor bipolaire à hétérojonction SiGe/Si pour application radio-sur-fibre.” 2014. Doctoral Dissertation, Université Paris-Est. Accessed May 29, 2020. http://www.theses.fr/2014PEST1101.

MLA Handbook (7th Edition):

Rosales, Marc. “Study of SiGe HPT for radio over fiber applications : Analyse de phototransistor bipolaire à hétérojonction SiGe/Si pour application radio-sur-fibre.” 2014. Web. 29 May 2020.

Vancouver:

Rosales M. Study of SiGe HPT for radio over fiber applications : Analyse de phototransistor bipolaire à hétérojonction SiGe/Si pour application radio-sur-fibre. [Internet] [Doctoral dissertation]. Université Paris-Est; 2014. [cited 2020 May 29]. Available from: http://www.theses.fr/2014PEST1101.

Council of Science Editors:

Rosales M. Study of SiGe HPT for radio over fiber applications : Analyse de phototransistor bipolaire à hétérojonction SiGe/Si pour application radio-sur-fibre. [Doctoral Dissertation]. Université Paris-Est; 2014. Available from: http://www.theses.fr/2014PEST1101


Boston University

25. Durmaz, Habibe. Terahertz and mid-infrared photodetectors based on intersubband transitions in novel materials systems.

Degree: PhD, Electrical & Computer Engineering, 2016, Boston University

 The terahertz (THz) and mid-infrared (MIR) spectral regions have many potential applications in the industrial, biomedical, and military sectors. Yet, a wide portion of this… (more)

Subjects/Keywords: Electrical engineering; GaN detectors; Intersubband photodetectors; MiR photodetectors; SiGe detectors; SiGe strain engineering; THz photodetectors

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APA (6th Edition):

Durmaz, H. (2016). Terahertz and mid-infrared photodetectors based on intersubband transitions in novel materials systems. (Doctoral Dissertation). Boston University. Retrieved from http://hdl.handle.net/2144/17077

Chicago Manual of Style (16th Edition):

Durmaz, Habibe. “Terahertz and mid-infrared photodetectors based on intersubband transitions in novel materials systems.” 2016. Doctoral Dissertation, Boston University. Accessed May 29, 2020. http://hdl.handle.net/2144/17077.

MLA Handbook (7th Edition):

Durmaz, Habibe. “Terahertz and mid-infrared photodetectors based on intersubband transitions in novel materials systems.” 2016. Web. 29 May 2020.

Vancouver:

Durmaz H. Terahertz and mid-infrared photodetectors based on intersubband transitions in novel materials systems. [Internet] [Doctoral dissertation]. Boston University; 2016. [cited 2020 May 29]. Available from: http://hdl.handle.net/2144/17077.

Council of Science Editors:

Durmaz H. Terahertz and mid-infrared photodetectors based on intersubband transitions in novel materials systems. [Doctoral Dissertation]. Boston University; 2016. Available from: http://hdl.handle.net/2144/17077

26. Claude, Jean-Benoît. Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS.

Degree: Docteur es, Physique et sciences de la matière. Matière condensée et nanosciences, 2017, Aix Marseille Université

Les problématiques liées à la diminution de la taille des dispositifs actuels amènent l’industrie à réfléchir à des techniques de gravure ayant des résolutions à… (more)

Subjects/Keywords: Nanostructures; Fib; Silicium; Germanium; Coeur-Coquille; SiGe; Nanostructures; Fib; Silicon; Germanium; Core-Shell; SiGe

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APA (6th Edition):

Claude, J. (2017). Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2017AIXM0445

Chicago Manual of Style (16th Edition):

Claude, Jean-Benoît. “Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS.” 2017. Doctoral Dissertation, Aix Marseille Université. Accessed May 29, 2020. http://www.theses.fr/2017AIXM0445.

MLA Handbook (7th Edition):

Claude, Jean-Benoît. “Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS.” 2017. Web. 29 May 2020.

Vancouver:

Claude J. Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS. [Internet] [Doctoral dissertation]. Aix Marseille Université 2017. [cited 2020 May 29]. Available from: http://www.theses.fr/2017AIXM0445.

Council of Science Editors:

Claude J. Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS. [Doctoral Dissertation]. Aix Marseille Université 2017. Available from: http://www.theses.fr/2017AIXM0445

27. Tiiliharju, Esa. Integration of Broadband Direct-Conversion Quadrature Modulators.

Degree: 2006, Helsinki University of Technology

 To increase spectral efficiency, transmitters usually send only one of the information carrying sidebands centered around a single radio-frequency carrier. The close-lying mirror, or image,… (more)

Subjects/Keywords: SSB transmitter; direct-conversion quadrature modulator; SiGe; digital CMOS; microwave frequencies; yksisivukaistainen lähetin; suoramuunnos kvadratuurimodulaattori; SiGe; digitaali-CMOS; mikroaaltotaajuusalue

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APA (6th Edition):

Tiiliharju, E. (2006). Integration of Broadband Direct-Conversion Quadrature Modulators. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2006/isbn9512285223/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tiiliharju, Esa. “Integration of Broadband Direct-Conversion Quadrature Modulators.” 2006. Thesis, Helsinki University of Technology. Accessed May 29, 2020. http://lib.tkk.fi/Diss/2006/isbn9512285223/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tiiliharju, Esa. “Integration of Broadband Direct-Conversion Quadrature Modulators.” 2006. Web. 29 May 2020.

Vancouver:

Tiiliharju E. Integration of Broadband Direct-Conversion Quadrature Modulators. [Internet] [Thesis]. Helsinki University of Technology; 2006. [cited 2020 May 29]. Available from: http://lib.tkk.fi/Diss/2006/isbn9512285223/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tiiliharju E. Integration of Broadband Direct-Conversion Quadrature Modulators. [Thesis]. Helsinki University of Technology; 2006. Available from: http://lib.tkk.fi/Diss/2006/isbn9512285223/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

28. Erlania Lima de Oliveira. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem.

Degree: 2008, Universidade Federal do Rio Grande do Norte

We have used ab initio calculations to investigate the electronic structure of SiGe based nanocrystals (NCs). This work is divided in three parts. In the… (more)

Subjects/Keywords: Ópticas de nanocristais de SiGe; Efeitos de dopagem e desordem; FISICA; Optical SiGe nanocrystals; Effects of doping and disorder

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Oliveira, E. L. d. (2008). Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem. (Thesis). Universidade Federal do Rio Grande do Norte. Retrieved from http://bdtd.bczm.ufrn.br/tedesimplificado//tde_busca/arquivo.php?codArquivo=2705

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Oliveira, Erlania Lima de. “Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem.” 2008. Thesis, Universidade Federal do Rio Grande do Norte. Accessed May 29, 2020. http://bdtd.bczm.ufrn.br/tedesimplificado//tde_busca/arquivo.php?codArquivo=2705.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Oliveira, Erlania Lima de. “Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem.” 2008. Web. 29 May 2020.

Vancouver:

Oliveira ELd. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem. [Internet] [Thesis]. Universidade Federal do Rio Grande do Norte; 2008. [cited 2020 May 29]. Available from: http://bdtd.bczm.ufrn.br/tedesimplificado//tde_busca/arquivo.php?codArquivo=2705.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Oliveira ELd. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem. [Thesis]. Universidade Federal do Rio Grande do Norte; 2008. Available from: http://bdtd.bczm.ufrn.br/tedesimplificado//tde_busca/arquivo.php?codArquivo=2705

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

29. Villalon, Anthony. Etude de nano-transistors à faible pente sous le seuil pour des applications très basse consommation : Steep slope nano-transistors for ultra low power applications.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2014, Université de Grenoble

Le transistor à effet tunnel bande à bande (TFET) est une architecture PIN à grille capable d’obtenir une pente sous le seuil inférieure à 60mV/dec… (more)

Subjects/Keywords: Pente sous le seuil; Effet tunnel; Transistor; Caractérisation; TFET; SiGe; FDSOI; Subthreshold slope; Tunneling; Transistor; Characterization; TFET; SiGe; FDSOI; 620

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Villalon, A. (2014). Etude de nano-transistors à faible pente sous le seuil pour des applications très basse consommation : Steep slope nano-transistors for ultra low power applications. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2014GRENT101

Chicago Manual of Style (16th Edition):

Villalon, Anthony. “Etude de nano-transistors à faible pente sous le seuil pour des applications très basse consommation : Steep slope nano-transistors for ultra low power applications.” 2014. Doctoral Dissertation, Université de Grenoble. Accessed May 29, 2020. http://www.theses.fr/2014GRENT101.

MLA Handbook (7th Edition):

Villalon, Anthony. “Etude de nano-transistors à faible pente sous le seuil pour des applications très basse consommation : Steep slope nano-transistors for ultra low power applications.” 2014. Web. 29 May 2020.

Vancouver:

Villalon A. Etude de nano-transistors à faible pente sous le seuil pour des applications très basse consommation : Steep slope nano-transistors for ultra low power applications. [Internet] [Doctoral dissertation]. Université de Grenoble; 2014. [cited 2020 May 29]. Available from: http://www.theses.fr/2014GRENT101.

Council of Science Editors:

Villalon A. Etude de nano-transistors à faible pente sous le seuil pour des applications très basse consommation : Steep slope nano-transistors for ultra low power applications. [Doctoral Dissertation]. Université de Grenoble; 2014. Available from: http://www.theses.fr/2014GRENT101


Universidade do Rio Grande do Norte

30. Oliveira, Erlania Lima de. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem .

Degree: 2008, Universidade do Rio Grande do Norte

 We have used ab initio calculations to investigate the electronic structure of SiGe based nanocrystals (NC s). This work is divided in three parts. In… (more)

Subjects/Keywords: Ópticas de nanocristais de SiGe; Efeitos de dopagem e desordem; Optical SiGe nanocrystals; Effects of doping and disorder

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Oliveira, E. L. d. (2008). Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem . (Doctoral Dissertation). Universidade do Rio Grande do Norte. Retrieved from http://repositorio.ufrn.br/handle/123456789/16555

Chicago Manual of Style (16th Edition):

Oliveira, Erlania Lima de. “Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem .” 2008. Doctoral Dissertation, Universidade do Rio Grande do Norte. Accessed May 29, 2020. http://repositorio.ufrn.br/handle/123456789/16555.

MLA Handbook (7th Edition):

Oliveira, Erlania Lima de. “Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem .” 2008. Web. 29 May 2020.

Vancouver:

Oliveira ELd. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem . [Internet] [Doctoral dissertation]. Universidade do Rio Grande do Norte; 2008. [cited 2020 May 29]. Available from: http://repositorio.ufrn.br/handle/123456789/16555.

Council of Science Editors:

Oliveira ELd. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem . [Doctoral Dissertation]. Universidade do Rio Grande do Norte; 2008. Available from: http://repositorio.ufrn.br/handle/123456789/16555

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