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You searched for subject:(SiGe). Showing records 1 – 30 of 230 total matches.

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1. Wachter, Mason Thomas. On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform.

Degree: MS, Electrical and Computer Engineering, 2017, Georgia Tech

 The objective of this thesis is to analyze the effects of total ionizing dose radiation on transient response of the Silicon-Germanium BiCMOS platform. Accumulation of… (more)

Subjects/Keywords: SiGe

…research presented in this thesis focuses on the radiation effects on SiliconGermanium (SiGe… …x28;CMOS), and SiGe Heterojunction Bipolar Transistor (SiGe HBTs) devices… …This document is organized as follows: Chapter 1 provides an introduction to SiGe BiCMOS… …technologies, SiGe fabrication techniques, and methods of operation for both HBTs, and CMOS devices… …environment and the radiation effects that SiGe BiCMOS electronics are exposed to for space based… 

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APA (6th Edition):

Wachter, M. T. (2017). On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58740

Chicago Manual of Style (16th Edition):

Wachter, Mason Thomas. “On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform.” 2017. Masters Thesis, Georgia Tech. Accessed March 21, 2019. http://hdl.handle.net/1853/58740.

MLA Handbook (7th Edition):

Wachter, Mason Thomas. “On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform.” 2017. Web. 21 Mar 2019.

Vancouver:

Wachter MT. On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform. [Internet] [Masters thesis]. Georgia Tech; 2017. [cited 2019 Mar 21]. Available from: http://hdl.handle.net/1853/58740.

Council of Science Editors:

Wachter MT. On the effects of total ionizing dose to the single-event transient response of a silicon-germanium BiCMOS platform. [Masters Thesis]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/58740


Boston College

2. Wang, Xiaowei. Thermoelectric property studies on nanostructured N-type Si-Ge Bulk Materials.

Degree: PhD, Physics, 2009, Boston College

SiGe alloys are the only proven thermoelectric materials in power generation devices operating above 600 °C and up to 1000 °C in heat conversion into… (more)

Subjects/Keywords: SiGe alloys

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APA (6th Edition):

Wang, X. (2009). Thermoelectric property studies on nanostructured N-type Si-Ge Bulk Materials. (Doctoral Dissertation). Boston College. Retrieved from http://dlib.bc.edu/islandora/object/bc-ir:101594

Chicago Manual of Style (16th Edition):

Wang, Xiaowei. “Thermoelectric property studies on nanostructured N-type Si-Ge Bulk Materials.” 2009. Doctoral Dissertation, Boston College. Accessed March 21, 2019. http://dlib.bc.edu/islandora/object/bc-ir:101594.

MLA Handbook (7th Edition):

Wang, Xiaowei. “Thermoelectric property studies on nanostructured N-type Si-Ge Bulk Materials.” 2009. Web. 21 Mar 2019.

Vancouver:

Wang X. Thermoelectric property studies on nanostructured N-type Si-Ge Bulk Materials. [Internet] [Doctoral dissertation]. Boston College; 2009. [cited 2019 Mar 21]. Available from: http://dlib.bc.edu/islandora/object/bc-ir:101594.

Council of Science Editors:

Wang X. Thermoelectric property studies on nanostructured N-type Si-Ge Bulk Materials. [Doctoral Dissertation]. Boston College; 2009. Available from: http://dlib.bc.edu/islandora/object/bc-ir:101594


Texas A&M University

3. Gwak, Yunki. Thermal Transport Measurement of Silicon-Germanium Nanowires.

Degree: 2010, Texas A&M University

 Thermal properties of one dimensional nanostructures are of interest for thermoelectric energy conversion. Thermoelectric efficiency is related to non dimensional thermoelectric figure of merit, ZT=S2(more)

Subjects/Keywords: SiGe; nanowire; thermal conductivity

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APA (6th Edition):

Gwak, Y. (2010). Thermal Transport Measurement of Silicon-Germanium Nanowires. (Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-889

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gwak, Yunki. “Thermal Transport Measurement of Silicon-Germanium Nanowires.” 2010. Thesis, Texas A&M University. Accessed March 21, 2019. http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-889.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gwak, Yunki. “Thermal Transport Measurement of Silicon-Germanium Nanowires.” 2010. Web. 21 Mar 2019.

Vancouver:

Gwak Y. Thermal Transport Measurement of Silicon-Germanium Nanowires. [Internet] [Thesis]. Texas A&M University; 2010. [cited 2019 Mar 21]. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-889.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gwak Y. Thermal Transport Measurement of Silicon-Germanium Nanowires. [Thesis]. Texas A&M University; 2010. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-889

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

4. Haugerud, Becca Mary. Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology.

Degree: MS, Electrical and Computer Engineering, 2005, Georgia Tech

 This work examines the effects of radiation and strain on silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. First, aspects of the various SiGe HBT… (more)

Subjects/Keywords: SiGe; BiCMOS

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APA (6th Edition):

Haugerud, B. M. (2005). Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/6952

Chicago Manual of Style (16th Edition):

Haugerud, Becca Mary. “Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology.” 2005. Masters Thesis, Georgia Tech. Accessed March 21, 2019. http://hdl.handle.net/1853/6952.

MLA Handbook (7th Edition):

Haugerud, Becca Mary. “Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology.” 2005. Web. 21 Mar 2019.

Vancouver:

Haugerud BM. Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology. [Internet] [Masters thesis]. Georgia Tech; 2005. [cited 2019 Mar 21]. Available from: http://hdl.handle.net/1853/6952.

Council of Science Editors:

Haugerud BM. Radiation and Strain Effects in Silicon-Germanium Bipolar Complementary Metal Oxide Semiconductor Technology. [Masters Thesis]. Georgia Tech; 2005. Available from: http://hdl.handle.net/1853/6952


Penn State University

5. Zhang, Xi. SIZE EFFECTS IN ALLOY AND HETEROSTRUCTURED.

Degree: PhD, Materials Science and Engineering, 2009, Penn State University

 This dissertation focuses on studies of the size-dependent properties of Si1-xGex alloy and heterostructured nanowires grown by the vapor-liquid-solid (VLS) mechanism. Chemical vapor deposition (CVD)… (more)

Subjects/Keywords: nanowires; SiGe; size effect diffusion

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APA (6th Edition):

Zhang, X. (2009). SIZE EFFECTS IN ALLOY AND HETEROSTRUCTURED. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/9805

Chicago Manual of Style (16th Edition):

Zhang, Xi. “SIZE EFFECTS IN ALLOY AND HETEROSTRUCTURED.” 2009. Doctoral Dissertation, Penn State University. Accessed March 21, 2019. https://etda.libraries.psu.edu/catalog/9805.

MLA Handbook (7th Edition):

Zhang, Xi. “SIZE EFFECTS IN ALLOY AND HETEROSTRUCTURED.” 2009. Web. 21 Mar 2019.

Vancouver:

Zhang X. SIZE EFFECTS IN ALLOY AND HETEROSTRUCTURED. [Internet] [Doctoral dissertation]. Penn State University; 2009. [cited 2019 Mar 21]. Available from: https://etda.libraries.psu.edu/catalog/9805.

Council of Science Editors:

Zhang X. SIZE EFFECTS IN ALLOY AND HETEROSTRUCTURED. [Doctoral Dissertation]. Penn State University; 2009. Available from: https://etda.libraries.psu.edu/catalog/9805


Georgia Tech

6. Wier, Brian R. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.

Degree: MS, Electrical and Computer Engineering, 2015, Georgia Tech

 This thesis describes the characterization and modeling of various hot carrier degradation mechanisms in silicon-germanium heterojunction bipolar transistors. An analysis of measured stress data and… (more)

Subjects/Keywords: Hot carrier; Reliability; SiGe HBT

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APA (6th Edition):

Wier, B. R. (2015). Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/60401

Chicago Manual of Style (16th Edition):

Wier, Brian R. “Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.” 2015. Masters Thesis, Georgia Tech. Accessed March 21, 2019. http://hdl.handle.net/1853/60401.

MLA Handbook (7th Edition):

Wier, Brian R. “Characterization and modeling of hot carrier degradation in silicon-germanium HBTs.” 2015. Web. 21 Mar 2019.

Vancouver:

Wier BR. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. [Internet] [Masters thesis]. Georgia Tech; 2015. [cited 2019 Mar 21]. Available from: http://hdl.handle.net/1853/60401.

Council of Science Editors:

Wier BR. Characterization and modeling of hot carrier degradation in silicon-germanium HBTs. [Masters Thesis]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/60401


Université de Bordeaux I

7. Al-S'adi, Mahmoud. TCAD based SiGe HBT advanced architecture exploration : Prévision de la demande type ARIMA par agrégation.

Degree: Docteur es, Electronique, 2011, Université de Bordeaux I

Dans le but d’améliorer les transistors bipolaires TBH SiGe, nous proposons d’étudier l’impact de la contrainte mécanique sur leurs performances. En effet, cette contrainte permet… (more)

Subjects/Keywords: SiGe TBH; Bipolaire; Contrainte mécanique; SIGe HBT; Bipolar; Strain Technology

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APA (6th Edition):

Al-S'adi, M. (2011). TCAD based SiGe HBT advanced architecture exploration : Prévision de la demande type ARIMA par agrégation. (Doctoral Dissertation). Université de Bordeaux I. Retrieved from http://www.theses.fr/2011BOR14239

Chicago Manual of Style (16th Edition):

Al-S'adi, Mahmoud. “TCAD based SiGe HBT advanced architecture exploration : Prévision de la demande type ARIMA par agrégation.” 2011. Doctoral Dissertation, Université de Bordeaux I. Accessed March 21, 2019. http://www.theses.fr/2011BOR14239.

MLA Handbook (7th Edition):

Al-S'adi, Mahmoud. “TCAD based SiGe HBT advanced architecture exploration : Prévision de la demande type ARIMA par agrégation.” 2011. Web. 21 Mar 2019.

Vancouver:

Al-S'adi M. TCAD based SiGe HBT advanced architecture exploration : Prévision de la demande type ARIMA par agrégation. [Internet] [Doctoral dissertation]. Université de Bordeaux I; 2011. [cited 2019 Mar 21]. Available from: http://www.theses.fr/2011BOR14239.

Council of Science Editors:

Al-S'adi M. TCAD based SiGe HBT advanced architecture exploration : Prévision de la demande type ARIMA par agrégation. [Doctoral Dissertation]. Université de Bordeaux I; 2011. Available from: http://www.theses.fr/2011BOR14239


Georgia Tech

8. Omprakash, Anup. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.

Degree: MS, Electrical and Computer Engineering, 2016, Georgia Tech

 The objective of this work is to characterize and investigate the effect of extreme environments, such as high temperature (up to 300^∘C) and radiation, on… (more)

Subjects/Keywords: SiGe; SiGe HBTs; High temperature; Total dose effects; Reliability; Thermal instability

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APA (6th Edition):

Omprakash, A. (2016). Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58195

Chicago Manual of Style (16th Edition):

Omprakash, Anup. “Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.” 2016. Masters Thesis, Georgia Tech. Accessed March 21, 2019. http://hdl.handle.net/1853/58195.

MLA Handbook (7th Edition):

Omprakash, Anup. “Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments.” 2016. Web. 21 Mar 2019.

Vancouver:

Omprakash A. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. [Internet] [Masters thesis]. Georgia Tech; 2016. [cited 2019 Mar 21]. Available from: http://hdl.handle.net/1853/58195.

Council of Science Editors:

Omprakash A. Extreme environment operation of thick-film SOI SiGe HBTs in both high temperature & radiation-rich environments. [Masters Thesis]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58195

9. Mohamad, Blend. Electrical characterization of fully depleted SOI devices based on C-V measurements : Caractérisation électrique des dispositifs FDSOI établie par mesures C-V.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2017, Grenoble Alpes

Les technologies de films minces sur isolant apparaissent comme des solutions fiables pour la nano électronique. Elles permettent de dépasser les limites des technologies sur… (more)

Subjects/Keywords: Fdsoi; C-V; Si; SiGe; Fdsoi; C-V; Si; SiGe; 620

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APA (6th Edition):

Mohamad, B. (2017). Electrical characterization of fully depleted SOI devices based on C-V measurements : Caractérisation électrique des dispositifs FDSOI établie par mesures C-V. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2017GREAT001

Chicago Manual of Style (16th Edition):

Mohamad, Blend. “Electrical characterization of fully depleted SOI devices based on C-V measurements : Caractérisation électrique des dispositifs FDSOI établie par mesures C-V.” 2017. Doctoral Dissertation, Grenoble Alpes. Accessed March 21, 2019. http://www.theses.fr/2017GREAT001.

MLA Handbook (7th Edition):

Mohamad, Blend. “Electrical characterization of fully depleted SOI devices based on C-V measurements : Caractérisation électrique des dispositifs FDSOI établie par mesures C-V.” 2017. Web. 21 Mar 2019.

Vancouver:

Mohamad B. Electrical characterization of fully depleted SOI devices based on C-V measurements : Caractérisation électrique des dispositifs FDSOI établie par mesures C-V. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2017. [cited 2019 Mar 21]. Available from: http://www.theses.fr/2017GREAT001.

Council of Science Editors:

Mohamad B. Electrical characterization of fully depleted SOI devices based on C-V measurements : Caractérisation électrique des dispositifs FDSOI établie par mesures C-V. [Doctoral Dissertation]. Grenoble Alpes; 2017. Available from: http://www.theses.fr/2017GREAT001


University of California – San Diego

10. Lin, Hsin-Chang. High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process.

Degree: Electrical Engineering (Elec Circ and Sys) and Cog Sci, 2015, University of California – San Diego

 This thesis first presents a fully-integrated 16-way power combining amplifier for 67-92 GHz applications in an advanced 90 nm silicon germanium (SiGe) HBT technology. The… (more)

Subjects/Keywords: Electrical engineering; CMOS; Millimeter-wave; SiGe; THz

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APA (6th Edition):

Lin, H. (2015). High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process. (Thesis). University of California – San Diego. Retrieved from http://www.escholarship.org/uc/item/4388n7zd

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Hsin-Chang. “High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process.” 2015. Thesis, University of California – San Diego. Accessed March 21, 2019. http://www.escholarship.org/uc/item/4388n7zd.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Hsin-Chang. “High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process.” 2015. Web. 21 Mar 2019.

Vancouver:

Lin H. High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process. [Internet] [Thesis]. University of California – San Diego; 2015. [cited 2019 Mar 21]. Available from: http://www.escholarship.org/uc/item/4388n7zd.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin H. High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process. [Thesis]. University of California – San Diego; 2015. Available from: http://www.escholarship.org/uc/item/4388n7zd

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New South Wales

11. Li, Dun. Material characterization and device optimization of silicon germanium solar cells grown on silicon substrates.

Degree: Photovoltaics & Renewable Energy Engineering, 2016, University of New South Wales

 Successful growth of III-V solar cells on silicon (Si) substrates offers great promise by combining the high efficiency merits of III-V materials with the low… (more)

Subjects/Keywords: SiGe; solar cell; III-V on Si

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APA (6th Edition):

Li, D. (2016). Material characterization and device optimization of silicon germanium solar cells grown on silicon substrates. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/56962 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:42157/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Li, Dun. “Material characterization and device optimization of silicon germanium solar cells grown on silicon substrates.” 2016. Doctoral Dissertation, University of New South Wales. Accessed March 21, 2019. http://handle.unsw.edu.au/1959.4/56962 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:42157/SOURCE02?view=true.

MLA Handbook (7th Edition):

Li, Dun. “Material characterization and device optimization of silicon germanium solar cells grown on silicon substrates.” 2016. Web. 21 Mar 2019.

Vancouver:

Li D. Material characterization and device optimization of silicon germanium solar cells grown on silicon substrates. [Internet] [Doctoral dissertation]. University of New South Wales; 2016. [cited 2019 Mar 21]. Available from: http://handle.unsw.edu.au/1959.4/56962 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:42157/SOURCE02?view=true.

Council of Science Editors:

Li D. Material characterization and device optimization of silicon germanium solar cells grown on silicon substrates. [Doctoral Dissertation]. University of New South Wales; 2016. Available from: http://handle.unsw.edu.au/1959.4/56962 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:42157/SOURCE02?view=true


Clemson University

12. Thompson, Daniel. Thermoelectric Properties of Silicon Germanium: An In-depth Study to the Reduction of Lattice Thermal Conductivity.

Degree: PhD, Physics, 2012, Clemson University

 Thermoelectric materials provide a solid state route for the direct conversion between thermal and electrical energy. Hence, thermal gradients can be used to generate power… (more)

Subjects/Keywords: SE SPS; SiGe; SPS; synthesis; thermoelectric; Physics

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APA (6th Edition):

Thompson, D. (2012). Thermoelectric Properties of Silicon Germanium: An In-depth Study to the Reduction of Lattice Thermal Conductivity. (Doctoral Dissertation). Clemson University. Retrieved from https://tigerprints.clemson.edu/all_dissertations/984

Chicago Manual of Style (16th Edition):

Thompson, Daniel. “Thermoelectric Properties of Silicon Germanium: An In-depth Study to the Reduction of Lattice Thermal Conductivity.” 2012. Doctoral Dissertation, Clemson University. Accessed March 21, 2019. https://tigerprints.clemson.edu/all_dissertations/984.

MLA Handbook (7th Edition):

Thompson, Daniel. “Thermoelectric Properties of Silicon Germanium: An In-depth Study to the Reduction of Lattice Thermal Conductivity.” 2012. Web. 21 Mar 2019.

Vancouver:

Thompson D. Thermoelectric Properties of Silicon Germanium: An In-depth Study to the Reduction of Lattice Thermal Conductivity. [Internet] [Doctoral dissertation]. Clemson University; 2012. [cited 2019 Mar 21]. Available from: https://tigerprints.clemson.edu/all_dissertations/984.

Council of Science Editors:

Thompson D. Thermoelectric Properties of Silicon Germanium: An In-depth Study to the Reduction of Lattice Thermal Conductivity. [Doctoral Dissertation]. Clemson University; 2012. Available from: https://tigerprints.clemson.edu/all_dissertations/984


Georgia Tech

13. Song, Ickhyun. Design of SIGE BICMOS RF building blocks for extreme-environment applications.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The objective of this research is to understand the behavior of radio-frequency (RF) circuits under extreme-environment condition and to investigate the potential mitigation solution for… (more)

Subjects/Keywords: SiGe; BiCMOS; HBT; RF; Extreme environment

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APA (6th Edition):

Song, I. (2016). Design of SIGE BICMOS RF building blocks for extreme-environment applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59139

Chicago Manual of Style (16th Edition):

Song, Ickhyun. “Design of SIGE BICMOS RF building blocks for extreme-environment applications.” 2016. Doctoral Dissertation, Georgia Tech. Accessed March 21, 2019. http://hdl.handle.net/1853/59139.

MLA Handbook (7th Edition):

Song, Ickhyun. “Design of SIGE BICMOS RF building blocks for extreme-environment applications.” 2016. Web. 21 Mar 2019.

Vancouver:

Song I. Design of SIGE BICMOS RF building blocks for extreme-environment applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Mar 21]. Available from: http://hdl.handle.net/1853/59139.

Council of Science Editors:

Song I. Design of SIGE BICMOS RF building blocks for extreme-environment applications. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/59139


University of Texas – Austin

14. Kim, Yonghyun. Atomic-scale modeling and experimental studies for dopants and defects in Si and SiGe nano-scale CMOS devices.

Degree: Electrical and Computer Engineering, 2010, University of Texas – Austin

 Continued scaling of CMOS devices with Si and SixGe1-x down to 22 nm design node or beyond will require the formation of ever shallower and… (more)

Subjects/Keywords: Doping; Diffusion; Silicon; SiGe; CMOS; Modeling; TCAD

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APA (6th Edition):

Kim, Y. (2010). Atomic-scale modeling and experimental studies for dopants and defects in Si and SiGe nano-scale CMOS devices. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/ETD-UT-2010-05-739

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kim, Yonghyun. “Atomic-scale modeling and experimental studies for dopants and defects in Si and SiGe nano-scale CMOS devices.” 2010. Thesis, University of Texas – Austin. Accessed March 21, 2019. http://hdl.handle.net/2152/ETD-UT-2010-05-739.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kim, Yonghyun. “Atomic-scale modeling and experimental studies for dopants and defects in Si and SiGe nano-scale CMOS devices.” 2010. Web. 21 Mar 2019.

Vancouver:

Kim Y. Atomic-scale modeling and experimental studies for dopants and defects in Si and SiGe nano-scale CMOS devices. [Internet] [Thesis]. University of Texas – Austin; 2010. [cited 2019 Mar 21]. Available from: http://hdl.handle.net/2152/ETD-UT-2010-05-739.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kim Y. Atomic-scale modeling and experimental studies for dopants and defects in Si and SiGe nano-scale CMOS devices. [Thesis]. University of Texas – Austin; 2010. Available from: http://hdl.handle.net/2152/ETD-UT-2010-05-739

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New South Wales

15. Tsao, Chao-Yang. Fabrication and characterization of Ge thin films and Ge-rich SiGe alloys for photovoltaic applications.

Degree: Photovoltaics & Renewable Energy Engineering, 2011, University of New South Wales

 Germanium (Ge) thin films and Ge-rich silicon-germanium (SiGe) alloys have potential for lowering the manufacturing cost of photovoltaic (PV) devices especially in tandem solar cells.… (more)

Subjects/Keywords: Thin film; Germanium; SiGe alloy; Photovoltaic

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APA (6th Edition):

Tsao, C. (2011). Fabrication and characterization of Ge thin films and Ge-rich SiGe alloys for photovoltaic applications. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/51218 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9926/SOURCE1?view=true

Chicago Manual of Style (16th Edition):

Tsao, Chao-Yang. “Fabrication and characterization of Ge thin films and Ge-rich SiGe alloys for photovoltaic applications.” 2011. Doctoral Dissertation, University of New South Wales. Accessed March 21, 2019. http://handle.unsw.edu.au/1959.4/51218 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9926/SOURCE1?view=true.

MLA Handbook (7th Edition):

Tsao, Chao-Yang. “Fabrication and characterization of Ge thin films and Ge-rich SiGe alloys for photovoltaic applications.” 2011. Web. 21 Mar 2019.

Vancouver:

Tsao C. Fabrication and characterization of Ge thin films and Ge-rich SiGe alloys for photovoltaic applications. [Internet] [Doctoral dissertation]. University of New South Wales; 2011. [cited 2019 Mar 21]. Available from: http://handle.unsw.edu.au/1959.4/51218 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9926/SOURCE1?view=true.

Council of Science Editors:

Tsao C. Fabrication and characterization of Ge thin films and Ge-rich SiGe alloys for photovoltaic applications. [Doctoral Dissertation]. University of New South Wales; 2011. Available from: http://handle.unsw.edu.au/1959.4/51218 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9926/SOURCE1?view=true


University of Arizona

16. Peckler, Lauren Tiffany. Analysis of In-Situ Shear and Normal Forces During Metal Cmp, Electrical Interface States of Sulfur-Passivated Sige Moscaps, and Reaction Kinetics of Pyrite Nanocrystal Purity .

Degree: 2018, University of Arizona

 The first study presented in this dissertation concerns the synthesis of pyrite (FeS2) nanocrystals (NC). Since 1980s, pyrite has been studied as a potential replacement… (more)

Subjects/Keywords: CMP; MOSCAP; passivation; pyrite; SiGe; tribology

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APA (6th Edition):

Peckler, L. T. (2018). Analysis of In-Situ Shear and Normal Forces During Metal Cmp, Electrical Interface States of Sulfur-Passivated Sige Moscaps, and Reaction Kinetics of Pyrite Nanocrystal Purity . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/628181

Chicago Manual of Style (16th Edition):

Peckler, Lauren Tiffany. “Analysis of In-Situ Shear and Normal Forces During Metal Cmp, Electrical Interface States of Sulfur-Passivated Sige Moscaps, and Reaction Kinetics of Pyrite Nanocrystal Purity .” 2018. Doctoral Dissertation, University of Arizona. Accessed March 21, 2019. http://hdl.handle.net/10150/628181.

MLA Handbook (7th Edition):

Peckler, Lauren Tiffany. “Analysis of In-Situ Shear and Normal Forces During Metal Cmp, Electrical Interface States of Sulfur-Passivated Sige Moscaps, and Reaction Kinetics of Pyrite Nanocrystal Purity .” 2018. Web. 21 Mar 2019.

Vancouver:

Peckler LT. Analysis of In-Situ Shear and Normal Forces During Metal Cmp, Electrical Interface States of Sulfur-Passivated Sige Moscaps, and Reaction Kinetics of Pyrite Nanocrystal Purity . [Internet] [Doctoral dissertation]. University of Arizona; 2018. [cited 2019 Mar 21]. Available from: http://hdl.handle.net/10150/628181.

Council of Science Editors:

Peckler LT. Analysis of In-Situ Shear and Normal Forces During Metal Cmp, Electrical Interface States of Sulfur-Passivated Sige Moscaps, and Reaction Kinetics of Pyrite Nanocrystal Purity . [Doctoral Dissertation]. University of Arizona; 2018. Available from: http://hdl.handle.net/10150/628181


Australian National University

17. Feng, Ruixing. Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ .

Degree: 2016, Australian National University

 It is widely accepted that when transistors are scaled beyond the 10-nm technology generation in the near future, Ge, or alternatively Si1-xGex will potentially replace… (more)

Subjects/Keywords: Si; Ge; SiGe; EXAFS; Hall Effect; DFT

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APA (6th Edition):

Feng, R. (2016). Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ . (Thesis). Australian National University. Retrieved from http://hdl.handle.net/1885/107100

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Feng, Ruixing. “Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ .” 2016. Thesis, Australian National University. Accessed March 21, 2019. http://hdl.handle.net/1885/107100.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Feng, Ruixing. “Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ .” 2016. Web. 21 Mar 2019.

Vancouver:

Feng R. Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ . [Internet] [Thesis]. Australian National University; 2016. [cited 2019 Mar 21]. Available from: http://hdl.handle.net/1885/107100.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Feng R. Structural and Electrical Properties of In and C + In implanted Ge, Si, and Si₁ˍₓGeₓ . [Thesis]. Australian National University; 2016. Available from: http://hdl.handle.net/1885/107100

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

18. Du, Yan. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

SiGe source/drain technology has been sucessfully applied to bulk metal oxide semiconductor field effect transistors (MOSFETs). Both channel mobility and source/drain contact resistivity are substantially… (more)

Subjects/Keywords: nanowire; SiGe; Pt ALD; strain; CBED

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APA (6th Edition):

Du, Y. (2009). Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3433

Chicago Manual of Style (16th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Doctoral Dissertation, North Carolina State University. Accessed March 21, 2019. http://www.lib.ncsu.edu/resolver/1840.16/3433.

MLA Handbook (7th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Web. 21 Mar 2019.

Vancouver:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2019 Mar 21]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433.

Council of Science Editors:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433


NSYSU

19. Liu, Yi-heng. Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 Current silicon solar cell is developing towards ultra-thin feature for cost lowering, recombination suppressing and potential flexible applications. In this work, we examine the viability… (more)

Subjects/Keywords: InSe; SiGe buffer layer; CIGSe; CGSe; CISe; Heterojunction solar cell; AFORS-HET; Amorphous SiGe alloy

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APA (6th Edition):

Liu, Y. (2017). Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0818117-023545

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Yi-heng. “Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells.” 2017. Thesis, NSYSU. Accessed March 21, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0818117-023545.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Yi-heng. “Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells.” 2017. Web. 21 Mar 2019.

Vancouver:

Liu Y. Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Mar 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0818117-023545.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu Y. Design of a Si-Ge interlayer for CuGaSe2/Si heterojunction solar cells. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0818117-023545

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

20. Czornomaz, Lukas. Filière technologique hybride InGaAs/SiGe pour applications CMOS : Hybrid InGaAs/SiGe technology platform for CMOS applications.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2016, Grenoble Alpes

Les materiaux à forte mobilité comme l’InGaAs et le SiGe sont considérés comme des candidats potentiels pour remplacer le Si dans les circuits CMOS futurs.… (more)

Subjects/Keywords: CMOS; InGaAs; SiGe; Mosfet; Collage; Celo; CMOS; InGaAs; SiGe; Mosfet; Bonding; Celo; 620

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APA (6th Edition):

Czornomaz, L. (2016). Filière technologique hybride InGaAs/SiGe pour applications CMOS : Hybrid InGaAs/SiGe technology platform for CMOS applications. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2016GREAT013

Chicago Manual of Style (16th Edition):

Czornomaz, Lukas. “Filière technologique hybride InGaAs/SiGe pour applications CMOS : Hybrid InGaAs/SiGe technology platform for CMOS applications.” 2016. Doctoral Dissertation, Grenoble Alpes. Accessed March 21, 2019. http://www.theses.fr/2016GREAT013.

MLA Handbook (7th Edition):

Czornomaz, Lukas. “Filière technologique hybride InGaAs/SiGe pour applications CMOS : Hybrid InGaAs/SiGe technology platform for CMOS applications.” 2016. Web. 21 Mar 2019.

Vancouver:

Czornomaz L. Filière technologique hybride InGaAs/SiGe pour applications CMOS : Hybrid InGaAs/SiGe technology platform for CMOS applications. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2016. [cited 2019 Mar 21]. Available from: http://www.theses.fr/2016GREAT013.

Council of Science Editors:

Czornomaz L. Filière technologique hybride InGaAs/SiGe pour applications CMOS : Hybrid InGaAs/SiGe technology platform for CMOS applications. [Doctoral Dissertation]. Grenoble Alpes; 2016. Available from: http://www.theses.fr/2016GREAT013

21. Rozé, Fabien. Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies : Etude de l’oxydation thermique du SiGe pour application aux technologies CMOS FD-SOI avancées.

Degree: Docteur es, Matériaux, Mécanique, Génie civil, Electrochimie, 2018, Grenoble Alpes

La réduction continue des dimensions des transistors depuis les années 60 est à l’origine de l’explosion des usages de l’électronique. Toutefois, la réduction des dimensions… (more)

Subjects/Keywords: Cmos; SiGe; Sgoi; Contrainte; Condensation; Oxydation thermique; Cmos; SiGe; Sgoi; Strain; Condensation; Thermal oxidation; 530

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APA (6th Edition):

Rozé, F. (2018). Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies : Etude de l’oxydation thermique du SiGe pour application aux technologies CMOS FD-SOI avancées. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAI018

Chicago Manual of Style (16th Edition):

Rozé, Fabien. “Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies : Etude de l’oxydation thermique du SiGe pour application aux technologies CMOS FD-SOI avancées.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed March 21, 2019. http://www.theses.fr/2018GREAI018.

MLA Handbook (7th Edition):

Rozé, Fabien. “Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies : Etude de l’oxydation thermique du SiGe pour application aux technologies CMOS FD-SOI avancées.” 2018. Web. 21 Mar 2019.

Vancouver:

Rozé F. Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies : Etude de l’oxydation thermique du SiGe pour application aux technologies CMOS FD-SOI avancées. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2019 Mar 21]. Available from: http://www.theses.fr/2018GREAI018.

Council of Science Editors:

Rozé F. Study of Thermal Oxidation of SiGe for Advanced CMOS FD-SOI Technologies : Etude de l’oxydation thermique du SiGe pour application aux technologies CMOS FD-SOI avancées. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAI018


Université de Grenoble

22. Denneulin, Thibaud. Holographie électronique en champ sombre : une technique fiable pour mesurer des déformations dans les dispositifs de la microélectronique : Dark-field electron holography : a reliable technique for measuring strain in microelectronic devices.

Degree: Docteur es, Nanophysique, 2012, Université de Grenoble

Les contraintes font maintenant partie des “ boosters ” de la microélectronique au même titre que le SOI (silicium sur isolant) ou le couple grille… (more)

Subjects/Keywords: Holographie; Contraintes; Déformations; Microscopie électronique; SiGe; Transistors; Holography; Stress; Strain; Electron microscopy; SiGe; Transistors; 621

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APA (6th Edition):

Denneulin, T. (2012). Holographie électronique en champ sombre : une technique fiable pour mesurer des déformations dans les dispositifs de la microélectronique : Dark-field electron holography : a reliable technique for measuring strain in microelectronic devices. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2012GRENY089

Chicago Manual of Style (16th Edition):

Denneulin, Thibaud. “Holographie électronique en champ sombre : une technique fiable pour mesurer des déformations dans les dispositifs de la microélectronique : Dark-field electron holography : a reliable technique for measuring strain in microelectronic devices.” 2012. Doctoral Dissertation, Université de Grenoble. Accessed March 21, 2019. http://www.theses.fr/2012GRENY089.

MLA Handbook (7th Edition):

Denneulin, Thibaud. “Holographie électronique en champ sombre : une technique fiable pour mesurer des déformations dans les dispositifs de la microélectronique : Dark-field electron holography : a reliable technique for measuring strain in microelectronic devices.” 2012. Web. 21 Mar 2019.

Vancouver:

Denneulin T. Holographie électronique en champ sombre : une technique fiable pour mesurer des déformations dans les dispositifs de la microélectronique : Dark-field electron holography : a reliable technique for measuring strain in microelectronic devices. [Internet] [Doctoral dissertation]. Université de Grenoble; 2012. [cited 2019 Mar 21]. Available from: http://www.theses.fr/2012GRENY089.

Council of Science Editors:

Denneulin T. Holographie électronique en champ sombre : une technique fiable pour mesurer des déformations dans les dispositifs de la microélectronique : Dark-field electron holography : a reliable technique for measuring strain in microelectronic devices. [Doctoral Dissertation]. Université de Grenoble; 2012. Available from: http://www.theses.fr/2012GRENY089

23. Rosales, Marc. Study of SiGe HPT for radio over fiber applications : Analyse de phototransistor bipolaire à hétérojonction SiGe/Si pour application radio-sur-fibre.

Degree: Docteur es, Electronique, Optronique et Systèmes, 2014, Université Paris-Est

Ce travail de thèse présente le développement de phototransistors bipolaires à hétérojonction (HPT) SiGe/Si mis en œuvre dans une technologie de processus 80GHz SiGe bipolaire… (more)

Subjects/Keywords: SiGe HPT; Uwb; Phototransistors; Radio sur fibre; SiGe HPT; Uwb; Phototransistors; Radio over Fiber; RoF

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APA (6th Edition):

Rosales, M. (2014). Study of SiGe HPT for radio over fiber applications : Analyse de phototransistor bipolaire à hétérojonction SiGe/Si pour application radio-sur-fibre. (Doctoral Dissertation). Université Paris-Est. Retrieved from http://www.theses.fr/2014PEST1101

Chicago Manual of Style (16th Edition):

Rosales, Marc. “Study of SiGe HPT for radio over fiber applications : Analyse de phototransistor bipolaire à hétérojonction SiGe/Si pour application radio-sur-fibre.” 2014. Doctoral Dissertation, Université Paris-Est. Accessed March 21, 2019. http://www.theses.fr/2014PEST1101.

MLA Handbook (7th Edition):

Rosales, Marc. “Study of SiGe HPT for radio over fiber applications : Analyse de phototransistor bipolaire à hétérojonction SiGe/Si pour application radio-sur-fibre.” 2014. Web. 21 Mar 2019.

Vancouver:

Rosales M. Study of SiGe HPT for radio over fiber applications : Analyse de phototransistor bipolaire à hétérojonction SiGe/Si pour application radio-sur-fibre. [Internet] [Doctoral dissertation]. Université Paris-Est; 2014. [cited 2019 Mar 21]. Available from: http://www.theses.fr/2014PEST1101.

Council of Science Editors:

Rosales M. Study of SiGe HPT for radio over fiber applications : Analyse de phototransistor bipolaire à hétérojonction SiGe/Si pour application radio-sur-fibre. [Doctoral Dissertation]. Université Paris-Est; 2014. Available from: http://www.theses.fr/2014PEST1101

24. Claude, Jean-Benoît. Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS.

Degree: Docteur es, Physique et sciences de la matière. Matière condensée et nanosciences, 2017, Aix Marseille Université

Les problématiques liées à la diminution de la taille des dispositifs actuels amènent l’industrie à réfléchir à des techniques de gravure ayant des résolutions à… (more)

Subjects/Keywords: Nanostructures; Fib; Silicium; Germanium; Coeur-Coquille; SiGe; Nanostructures; Fib; Silicon; Germanium; Core-Shell; SiGe

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APA (6th Edition):

Claude, J. (2017). Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2017AIXM0445

Chicago Manual of Style (16th Edition):

Claude, Jean-Benoît. “Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS.” 2017. Doctoral Dissertation, Aix Marseille Université. Accessed March 21, 2019. http://www.theses.fr/2017AIXM0445.

MLA Handbook (7th Edition):

Claude, Jean-Benoît. “Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS.” 2017. Web. 21 Mar 2019.

Vancouver:

Claude J. Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS. [Internet] [Doctoral dissertation]. Aix Marseille Université 2017. [cited 2019 Mar 21]. Available from: http://www.theses.fr/2017AIXM0445.

Council of Science Editors:

Claude J. Etude des mécanismes de nanogravure par FIB-LMAIS : Mechanisms and applications of nanopatterning by FIB-LMAIS. [Doctoral Dissertation]. Aix Marseille Université 2017. Available from: http://www.theses.fr/2017AIXM0445


Boston University

25. Durmaz, Habibe. Terahertz and mid-infrared photodetectors based on intersubband transitions in novel materials systems.

Degree: PhD, Electrical & Computer Engineering, 2016, Boston University

 The terahertz (THz) and mid-infrared (MIR) spectral regions have many potential applications in the industrial, biomedical, and military sectors. Yet, a wide portion of this… (more)

Subjects/Keywords: Electrical engineering; GaN detectors; Intersubband photodetectors; MiR photodetectors; SiGe detectors; SiGe strain engineering; THz photodetectors

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APA (6th Edition):

Durmaz, H. (2016). Terahertz and mid-infrared photodetectors based on intersubband transitions in novel materials systems. (Doctoral Dissertation). Boston University. Retrieved from http://hdl.handle.net/2144/17077

Chicago Manual of Style (16th Edition):

Durmaz, Habibe. “Terahertz and mid-infrared photodetectors based on intersubband transitions in novel materials systems.” 2016. Doctoral Dissertation, Boston University. Accessed March 21, 2019. http://hdl.handle.net/2144/17077.

MLA Handbook (7th Edition):

Durmaz, Habibe. “Terahertz and mid-infrared photodetectors based on intersubband transitions in novel materials systems.” 2016. Web. 21 Mar 2019.

Vancouver:

Durmaz H. Terahertz and mid-infrared photodetectors based on intersubband transitions in novel materials systems. [Internet] [Doctoral dissertation]. Boston University; 2016. [cited 2019 Mar 21]. Available from: http://hdl.handle.net/2144/17077.

Council of Science Editors:

Durmaz H. Terahertz and mid-infrared photodetectors based on intersubband transitions in novel materials systems. [Doctoral Dissertation]. Boston University; 2016. Available from: http://hdl.handle.net/2144/17077

26. Tiiliharju, Esa. Integration of Broadband Direct-Conversion Quadrature Modulators.

Degree: 2006, Helsinki University of Technology

 To increase spectral efficiency, transmitters usually send only one of the information carrying sidebands centered around a single radio-frequency carrier. The close-lying mirror, or image,… (more)

Subjects/Keywords: SSB transmitter; direct-conversion quadrature modulator; SiGe; digital CMOS; microwave frequencies; yksisivukaistainen lähetin; suoramuunnos kvadratuurimodulaattori; SiGe; digitaali-CMOS; mikroaaltotaajuusalue

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APA (6th Edition):

Tiiliharju, E. (2006). Integration of Broadband Direct-Conversion Quadrature Modulators. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2006/isbn9512285223/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tiiliharju, Esa. “Integration of Broadband Direct-Conversion Quadrature Modulators.” 2006. Thesis, Helsinki University of Technology. Accessed March 21, 2019. http://lib.tkk.fi/Diss/2006/isbn9512285223/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tiiliharju, Esa. “Integration of Broadband Direct-Conversion Quadrature Modulators.” 2006. Web. 21 Mar 2019.

Vancouver:

Tiiliharju E. Integration of Broadband Direct-Conversion Quadrature Modulators. [Internet] [Thesis]. Helsinki University of Technology; 2006. [cited 2019 Mar 21]. Available from: http://lib.tkk.fi/Diss/2006/isbn9512285223/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tiiliharju E. Integration of Broadband Direct-Conversion Quadrature Modulators. [Thesis]. Helsinki University of Technology; 2006. Available from: http://lib.tkk.fi/Diss/2006/isbn9512285223/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

27. Erlania Lima de Oliveira. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem.

Degree: 2008, Universidade Federal do Rio Grande do Norte

We have used ab initio calculations to investigate the electronic structure of SiGe based nanocrystals (NCs). This work is divided in three parts. In the… (more)

Subjects/Keywords: Ópticas de nanocristais de SiGe; Efeitos de dopagem e desordem; FISICA; Optical SiGe nanocrystals; Effects of doping and disorder

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APA (6th Edition):

Oliveira, E. L. d. (2008). Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem. (Thesis). Universidade Federal do Rio Grande do Norte. Retrieved from http://bdtd.bczm.ufrn.br/tedesimplificado//tde_busca/arquivo.php?codArquivo=2705

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Oliveira, Erlania Lima de. “Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem.” 2008. Thesis, Universidade Federal do Rio Grande do Norte. Accessed March 21, 2019. http://bdtd.bczm.ufrn.br/tedesimplificado//tde_busca/arquivo.php?codArquivo=2705.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Oliveira, Erlania Lima de. “Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem.” 2008. Web. 21 Mar 2019.

Vancouver:

Oliveira ELd. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem. [Internet] [Thesis]. Universidade Federal do Rio Grande do Norte; 2008. [cited 2019 Mar 21]. Available from: http://bdtd.bczm.ufrn.br/tedesimplificado//tde_busca/arquivo.php?codArquivo=2705.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Oliveira ELd. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem. [Thesis]. Universidade Federal do Rio Grande do Norte; 2008. Available from: http://bdtd.bczm.ufrn.br/tedesimplificado//tde_busca/arquivo.php?codArquivo=2705

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade do Rio Grande do Norte

28. Oliveira, Erlania Lima de. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem .

Degree: 2008, Universidade do Rio Grande do Norte

 We have used ab initio calculations to investigate the electronic structure of SiGe based nanocrystals (NC s). This work is divided in three parts. In… (more)

Subjects/Keywords: Ópticas de nanocristais de SiGe; Efeitos de dopagem e desordem; Optical SiGe nanocrystals; Effects of doping and disorder

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Oliveira, E. L. d. (2008). Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem . (Doctoral Dissertation). Universidade do Rio Grande do Norte. Retrieved from http://repositorio.ufrn.br/handle/123456789/16555

Chicago Manual of Style (16th Edition):

Oliveira, Erlania Lima de. “Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem .” 2008. Doctoral Dissertation, Universidade do Rio Grande do Norte. Accessed March 21, 2019. http://repositorio.ufrn.br/handle/123456789/16555.

MLA Handbook (7th Edition):

Oliveira, Erlania Lima de. “Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem .” 2008. Web. 21 Mar 2019.

Vancouver:

Oliveira ELd. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem . [Internet] [Doctoral dissertation]. Universidade do Rio Grande do Norte; 2008. [cited 2019 Mar 21]. Available from: http://repositorio.ufrn.br/handle/123456789/16555.

Council of Science Editors:

Oliveira ELd. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem . [Doctoral Dissertation]. Universidade do Rio Grande do Norte; 2008. Available from: http://repositorio.ufrn.br/handle/123456789/16555


Universidade do Rio Grande do Norte

29. Oliveira, Erlania Lima de. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem .

Degree: 2008, Universidade do Rio Grande do Norte

 We have used ab initio calculations to investigate the electronic structure of SiGe based nanocrystals (NC s). This work is divided in three parts. In… (more)

Subjects/Keywords: Ópticas de nanocristais de SiGe; Efeitos de dopagem e desordem; Optical SiGe nanocrystals; Effects of doping and disorder

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Oliveira, E. L. d. (2008). Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem . (Thesis). Universidade do Rio Grande do Norte. Retrieved from http://repositorio.ufrn.br/handle/123456789/16555

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Oliveira, Erlania Lima de. “Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem .” 2008. Thesis, Universidade do Rio Grande do Norte. Accessed March 21, 2019. http://repositorio.ufrn.br/handle/123456789/16555.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Oliveira, Erlania Lima de. “Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem .” 2008. Web. 21 Mar 2019.

Vancouver:

Oliveira ELd. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem . [Internet] [Thesis]. Universidade do Rio Grande do Norte; 2008. [cited 2019 Mar 21]. Available from: http://repositorio.ufrn.br/handle/123456789/16555.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Oliveira ELd. Propriedades ópticas de nanocristais de SiGe: efeitos de dopagem e desordem . [Thesis]. Universidade do Rio Grande do Norte; 2008. Available from: http://repositorio.ufrn.br/handle/123456789/16555

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vilnius University

30. Šimukovič, Artūr. Investigation of DC, microwave characteristics and noise in SiGe and A3B5 heterojunction bipolar transistors.

Degree: PhD, Physics, 2010, Vilnius University

Modern Si/SiGe, AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors (HBTs) exhibit high-speed and high-frequency operation, high gain, low noise and low signal distortion. This work deals… (more)

Subjects/Keywords: Noise; Heterojunction bipolar transistors; SiGe HBT; InGaP HBT; Triukšmas; Įvarialyčiai dvipoliai tranzistoriai; SiGe ĮDT; InGaP ĮDT

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Šimukovič, A. (2010). Investigation of DC, microwave characteristics and noise in SiGe and A3B5 heterojunction bipolar transistors. (Doctoral Dissertation). Vilnius University. Retrieved from http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101001_150652-15626 ;

Chicago Manual of Style (16th Edition):

Šimukovič, Artūr. “Investigation of DC, microwave characteristics and noise in SiGe and A3B5 heterojunction bipolar transistors.” 2010. Doctoral Dissertation, Vilnius University. Accessed March 21, 2019. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101001_150652-15626 ;.

MLA Handbook (7th Edition):

Šimukovič, Artūr. “Investigation of DC, microwave characteristics and noise in SiGe and A3B5 heterojunction bipolar transistors.” 2010. Web. 21 Mar 2019.

Vancouver:

Šimukovič A. Investigation of DC, microwave characteristics and noise in SiGe and A3B5 heterojunction bipolar transistors. [Internet] [Doctoral dissertation]. Vilnius University; 2010. [cited 2019 Mar 21]. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101001_150652-15626 ;.

Council of Science Editors:

Šimukovič A. Investigation of DC, microwave characteristics and noise in SiGe and A3B5 heterojunction bipolar transistors. [Doctoral Dissertation]. Vilnius University; 2010. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101001_150652-15626 ;

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