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You searched for subject:(SiC MOSFET). Showing records 1 – 30 of 46 total matches.

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Université Montpellier II

1. Constant, Aurore. SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC.

Degree: Docteur es, Physique, 2011, Université Montpellier II

De nos jours, les dispositifs d'électroniques de puissance sont principalement basés sur la technologie silicium qui est mature et très bien établie. Toutefois, le silicium… (more)

Subjects/Keywords: SiC; Oxydation; Mosfet; SiC; Oxidation; Mosfet

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Constant, A. (2011). SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2011MON20061

Chicago Manual of Style (16th Edition):

Constant, Aurore. “SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC.” 2011. Doctoral Dissertation, Université Montpellier II. Accessed January 26, 2021. http://www.theses.fr/2011MON20061.

MLA Handbook (7th Edition):

Constant, Aurore. “SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC.” 2011. Web. 26 Jan 2021.

Vancouver:

Constant A. SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC. [Internet] [Doctoral dissertation]. Université Montpellier II; 2011. [cited 2021 Jan 26]. Available from: http://www.theses.fr/2011MON20061.

Council of Science Editors:

Constant A. SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC. [Doctoral Dissertation]. Université Montpellier II; 2011. Available from: http://www.theses.fr/2011MON20061


Penn State University

2. Follman, Jacob Jay. On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs.

Degree: 2013, Penn State University

 We utilize electrically detected magnetic resonance (EDMR) to explore the effects of the negative bias temperature instability (NBTI) in 4H-SiC metal oxide semiconductor field effect… (more)

Subjects/Keywords: NBTI; SiC; MOSFET; EPR; EDMR

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APA (6th Edition):

Follman, J. J. (2013). On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/17654

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Follman, Jacob Jay. “On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs.” 2013. Thesis, Penn State University. Accessed January 26, 2021. https://submit-etda.libraries.psu.edu/catalog/17654.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Follman, Jacob Jay. “On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs.” 2013. Web. 26 Jan 2021.

Vancouver:

Follman JJ. On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs. [Internet] [Thesis]. Penn State University; 2013. [cited 2021 Jan 26]. Available from: https://submit-etda.libraries.psu.edu/catalog/17654.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Follman JJ. On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs. [Thesis]. Penn State University; 2013. Available from: https://submit-etda.libraries.psu.edu/catalog/17654

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Texas – Austin

3. Tang, Hanning. Design, modeling and control of a 12.47 kV isolated three phase power factor correction rectifier.

Degree: PhD, Electrical and Computer Engineering, 2020, University of Texas – Austin

 A novel three-phase rectifier with power factor correction feature is proposed for the medium voltage (MV) high power (HP) applications. A typical application is to… (more)

Subjects/Keywords: MV-PFC; SiC MOSFET; Modular implementation

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APA (6th Edition):

Tang, H. (2020). Design, modeling and control of a 12.47 kV isolated three phase power factor correction rectifier. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/8134

Chicago Manual of Style (16th Edition):

Tang, Hanning. “Design, modeling and control of a 12.47 kV isolated three phase power factor correction rectifier.” 2020. Doctoral Dissertation, University of Texas – Austin. Accessed January 26, 2021. http://dx.doi.org/10.26153/tsw/8134.

MLA Handbook (7th Edition):

Tang, Hanning. “Design, modeling and control of a 12.47 kV isolated three phase power factor correction rectifier.” 2020. Web. 26 Jan 2021.

Vancouver:

Tang H. Design, modeling and control of a 12.47 kV isolated three phase power factor correction rectifier. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2020. [cited 2021 Jan 26]. Available from: http://dx.doi.org/10.26153/tsw/8134.

Council of Science Editors:

Tang H. Design, modeling and control of a 12.47 kV isolated three phase power factor correction rectifier. [Doctoral Dissertation]. University of Texas – Austin; 2020. Available from: http://dx.doi.org/10.26153/tsw/8134


Virginia Tech

4. DiMarino, Christina Marie. High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors.

Degree: MS, Electrical and Computer Engineering, 2014, Virginia Tech

 This thesis provides insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both… (more)

Subjects/Keywords: power semiconductor devices; SiC MOSFET; SiC BJT; SiC JFET; high temperature; characterization; silicon carbide

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APA (6th Edition):

DiMarino, C. M. (2014). High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/78116

Chicago Manual of Style (16th Edition):

DiMarino, Christina Marie. “High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors.” 2014. Masters Thesis, Virginia Tech. Accessed January 26, 2021. http://hdl.handle.net/10919/78116.

MLA Handbook (7th Edition):

DiMarino, Christina Marie. “High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors.” 2014. Web. 26 Jan 2021.

Vancouver:

DiMarino CM. High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors. [Internet] [Masters thesis]. Virginia Tech; 2014. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/10919/78116.

Council of Science Editors:

DiMarino CM. High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors. [Masters Thesis]. Virginia Tech; 2014. Available from: http://hdl.handle.net/10919/78116


INP Toulouse

5. Boige, François. Caractérisation et modélisation électrothermique compacte étendue du MOSFET SiC en régime extrême de fonctionnement incluant ses modes de défaillance : application à la conception d'une protection intégrée au plus proche du circuit de commande : Extensive compact electrothermal characterization and modeling of the SiC MOSFET under extreme operating conditions including failure modes : application to the design of an integrated protection as close as possible to the gate driver.

Degree: Docteur es, Génie Electrique, 2019, INP Toulouse

Le défi de la transition vers une énergie sans carbone passe, aujourd’hui, par un recours systématique à l’énergie électrique avec au centre des échanges l’électronique… (more)

Subjects/Keywords: MOSFET; SiC; Fiabilité; Gestion des pannes; Court-circuit; Fonctionnement sécurisé; MOSFET; SiC; Robustness; Fault management; Short-circuit; Safe operating

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APA (6th Edition):

Boige, F. (2019). Caractérisation et modélisation électrothermique compacte étendue du MOSFET SiC en régime extrême de fonctionnement incluant ses modes de défaillance : application à la conception d'une protection intégrée au plus proche du circuit de commande : Extensive compact electrothermal characterization and modeling of the SiC MOSFET under extreme operating conditions including failure modes : application to the design of an integrated protection as close as possible to the gate driver. (Doctoral Dissertation). INP Toulouse. Retrieved from http://www.theses.fr/2019INPT0084

Chicago Manual of Style (16th Edition):

Boige, François. “Caractérisation et modélisation électrothermique compacte étendue du MOSFET SiC en régime extrême de fonctionnement incluant ses modes de défaillance : application à la conception d'une protection intégrée au plus proche du circuit de commande : Extensive compact electrothermal characterization and modeling of the SiC MOSFET under extreme operating conditions including failure modes : application to the design of an integrated protection as close as possible to the gate driver.” 2019. Doctoral Dissertation, INP Toulouse. Accessed January 26, 2021. http://www.theses.fr/2019INPT0084.

MLA Handbook (7th Edition):

Boige, François. “Caractérisation et modélisation électrothermique compacte étendue du MOSFET SiC en régime extrême de fonctionnement incluant ses modes de défaillance : application à la conception d'une protection intégrée au plus proche du circuit de commande : Extensive compact electrothermal characterization and modeling of the SiC MOSFET under extreme operating conditions including failure modes : application to the design of an integrated protection as close as possible to the gate driver.” 2019. Web. 26 Jan 2021.

Vancouver:

Boige F. Caractérisation et modélisation électrothermique compacte étendue du MOSFET SiC en régime extrême de fonctionnement incluant ses modes de défaillance : application à la conception d'une protection intégrée au plus proche du circuit de commande : Extensive compact electrothermal characterization and modeling of the SiC MOSFET under extreme operating conditions including failure modes : application to the design of an integrated protection as close as possible to the gate driver. [Internet] [Doctoral dissertation]. INP Toulouse; 2019. [cited 2021 Jan 26]. Available from: http://www.theses.fr/2019INPT0084.

Council of Science Editors:

Boige F. Caractérisation et modélisation électrothermique compacte étendue du MOSFET SiC en régime extrême de fonctionnement incluant ses modes de défaillance : application à la conception d'une protection intégrée au plus proche du circuit de commande : Extensive compact electrothermal characterization and modeling of the SiC MOSFET under extreme operating conditions including failure modes : application to the design of an integrated protection as close as possible to the gate driver. [Doctoral Dissertation]. INP Toulouse; 2019. Available from: http://www.theses.fr/2019INPT0084


Université de Lorraine

6. Dang, Dinh Lam. Caractérisation, analyse et modélisation du MOSFET de puissance en carbure de silicium : Characterization, analysis and modeling of silicon carbide power MOSFET.

Degree: Docteur es, Génie électrique, 2019, Université de Lorraine

Le carbure de silicium (SiC) semble être actuellement le candidat le plus viable des semi-conducteurs à large bande interdite pour remplacer le silicium (Si) dans… (more)

Subjects/Keywords: SiC; MOSFET; Caractéristiques I-V; Modélisation; Mesure thermique; TSEP; SiC; MOSFET; I-V characteristics; Modeling; Thermal measurement; TSEP; 620.193; 621.381 52

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APA (6th Edition):

Dang, D. L. (2019). Caractérisation, analyse et modélisation du MOSFET de puissance en carbure de silicium : Characterization, analysis and modeling of silicon carbide power MOSFET. (Doctoral Dissertation). Université de Lorraine. Retrieved from http://www.theses.fr/2019LORR0052

Chicago Manual of Style (16th Edition):

Dang, Dinh Lam. “Caractérisation, analyse et modélisation du MOSFET de puissance en carbure de silicium : Characterization, analysis and modeling of silicon carbide power MOSFET.” 2019. Doctoral Dissertation, Université de Lorraine. Accessed January 26, 2021. http://www.theses.fr/2019LORR0052.

MLA Handbook (7th Edition):

Dang, Dinh Lam. “Caractérisation, analyse et modélisation du MOSFET de puissance en carbure de silicium : Characterization, analysis and modeling of silicon carbide power MOSFET.” 2019. Web. 26 Jan 2021.

Vancouver:

Dang DL. Caractérisation, analyse et modélisation du MOSFET de puissance en carbure de silicium : Characterization, analysis and modeling of silicon carbide power MOSFET. [Internet] [Doctoral dissertation]. Université de Lorraine; 2019. [cited 2021 Jan 26]. Available from: http://www.theses.fr/2019LORR0052.

Council of Science Editors:

Dang DL. Caractérisation, analyse et modélisation du MOSFET de puissance en carbure de silicium : Characterization, analysis and modeling of silicon carbide power MOSFET. [Doctoral Dissertation]. Université de Lorraine; 2019. Available from: http://www.theses.fr/2019LORR0052

7. Frifita, Khaled. Modélisation multi-physique d'un système électrique de puissance embarqué pour la simulation, le prototypage numérique et la commande : Multi-physics modeling of an electrical system embedded power for simulation, prototyping digital and the control.

Degree: Docteur es, Automatique, 2019, Aix Marseille Université

La qualité de l’énergie électrique dans les systèmes aéronautiques dépend directement de la complexité du système électrique qui la délivre. Les deux grandeurs (tension, courant)… (more)

Subjects/Keywords: MOSFET SiC; Pfc; Ac/dc; Dc/dc; Modèle électrothermique; Commande; Sasv; MOSFET SiC; Pfc; Ac/dc; Dc/dc

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APA (6th Edition):

Frifita, K. (2019). Modélisation multi-physique d'un système électrique de puissance embarqué pour la simulation, le prototypage numérique et la commande : Multi-physics modeling of an electrical system embedded power for simulation, prototyping digital and the control. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2019AIXM0334

Chicago Manual of Style (16th Edition):

Frifita, Khaled. “Modélisation multi-physique d'un système électrique de puissance embarqué pour la simulation, le prototypage numérique et la commande : Multi-physics modeling of an electrical system embedded power for simulation, prototyping digital and the control.” 2019. Doctoral Dissertation, Aix Marseille Université. Accessed January 26, 2021. http://www.theses.fr/2019AIXM0334.

MLA Handbook (7th Edition):

Frifita, Khaled. “Modélisation multi-physique d'un système électrique de puissance embarqué pour la simulation, le prototypage numérique et la commande : Multi-physics modeling of an electrical system embedded power for simulation, prototyping digital and the control.” 2019. Web. 26 Jan 2021.

Vancouver:

Frifita K. Modélisation multi-physique d'un système électrique de puissance embarqué pour la simulation, le prototypage numérique et la commande : Multi-physics modeling of an electrical system embedded power for simulation, prototyping digital and the control. [Internet] [Doctoral dissertation]. Aix Marseille Université 2019. [cited 2021 Jan 26]. Available from: http://www.theses.fr/2019AIXM0334.

Council of Science Editors:

Frifita K. Modélisation multi-physique d'un système électrique de puissance embarqué pour la simulation, le prototypage numérique et la commande : Multi-physics modeling of an electrical system embedded power for simulation, prototyping digital and the control. [Doctoral Dissertation]. Aix Marseille Université 2019. Available from: http://www.theses.fr/2019AIXM0334


Brno University of Technology

8. Kharchenko, Vadym. Návrh měniče s použitím polovodičů na bázi SiC: Design inverter using semiconductor on based SiC.

Degree: 2019, Brno University of Technology

 This work builds on a semester project 2. from the winter semester of this academic year. The aim of this thesis is the design of… (more)

Subjects/Keywords: DC/DC Měnič; SiC; MOSFET-tranzistor; VF transformátor; MATLAB-Simulink; DC/DC Converter; SiC; MOSFET-transistor; HF transformer; MATLAB-Simulink

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APA (6th Edition):

Kharchenko, V. (2019). Návrh měniče s použitím polovodičů na bázi SiC: Design inverter using semiconductor on based SiC. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/71169

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kharchenko, Vadym. “Návrh měniče s použitím polovodičů na bázi SiC: Design inverter using semiconductor on based SiC.” 2019. Thesis, Brno University of Technology. Accessed January 26, 2021. http://hdl.handle.net/11012/71169.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kharchenko, Vadym. “Návrh měniče s použitím polovodičů na bázi SiC: Design inverter using semiconductor on based SiC.” 2019. Web. 26 Jan 2021.

Vancouver:

Kharchenko V. Návrh měniče s použitím polovodičů na bázi SiC: Design inverter using semiconductor on based SiC. [Internet] [Thesis]. Brno University of Technology; 2019. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/11012/71169.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kharchenko V. Návrh měniče s použitím polovodičů na bázi SiC: Design inverter using semiconductor on based SiC. [Thesis]. Brno University of Technology; 2019. Available from: http://hdl.handle.net/11012/71169

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

9. -0411-1835. ION-INDUCED SINGLE-EVENT BURNOUT MECHANISMS IN SIC POWER MOSFETS AND DIODES.

Degree: PhD, Electrical Engineering, 2020, Vanderbilt University

 An estimated 50% of the electricity in the world is controlled by power semiconductor devices, with silicon carbide power devices superior to silicon power devices… (more)

Subjects/Keywords: Single-event burnout silicon carbide power mosfet diode; SiC; radiation

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APA (6th Edition):

-0411-1835. (2020). ION-INDUCED SINGLE-EVENT BURNOUT MECHANISMS IN SIC POWER MOSFETS AND DIODES. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/10134

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-0411-1835. “ION-INDUCED SINGLE-EVENT BURNOUT MECHANISMS IN SIC POWER MOSFETS AND DIODES.” 2020. Doctoral Dissertation, Vanderbilt University. Accessed January 26, 2021. http://hdl.handle.net/1803/10134.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-0411-1835. “ION-INDUCED SINGLE-EVENT BURNOUT MECHANISMS IN SIC POWER MOSFETS AND DIODES.” 2020. Web. 26 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-0411-1835. ION-INDUCED SINGLE-EVENT BURNOUT MECHANISMS IN SIC POWER MOSFETS AND DIODES. [Internet] [Doctoral dissertation]. Vanderbilt University; 2020. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/1803/10134.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-0411-1835. ION-INDUCED SINGLE-EVENT BURNOUT MECHANISMS IN SIC POWER MOSFETS AND DIODES. [Doctoral Dissertation]. Vanderbilt University; 2020. Available from: http://hdl.handle.net/1803/10134

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


INP Toulouse

10. Fabre, Joseph. Étude et mise en œuvre de modules de puissance MOSFET SiC pour leurs futures utilisations dans des convertisseurs ferroviaires : Study and implementation of SiC MOSFET power modules for future utilisation in railway converters.

Degree: Docteur es, Génie électrique, 2013, INP Toulouse

Le Carbure de Silicium (SiC) va permettre de repousser les limites des convertisseurs dans trois directions : tenue en tension élevée, haute température de fonctionnement… (more)

Subjects/Keywords: MOSFET; SiC; Carbure de Silicium; Onduleur; MLI; Ferroviaire; Traction; Caractérisation; Commutation; Pertes; Méthode d'opposition; MOSFET; SiC; Silicon Carbide; Inverter; PWM; Traction; Characterization; Commutation; Losses; Opposition method

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APA (6th Edition):

Fabre, J. (2013). Étude et mise en œuvre de modules de puissance MOSFET SiC pour leurs futures utilisations dans des convertisseurs ferroviaires : Study and implementation of SiC MOSFET power modules for future utilisation in railway converters. (Doctoral Dissertation). INP Toulouse. Retrieved from http://www.theses.fr/2013INPT0112

Chicago Manual of Style (16th Edition):

Fabre, Joseph. “Étude et mise en œuvre de modules de puissance MOSFET SiC pour leurs futures utilisations dans des convertisseurs ferroviaires : Study and implementation of SiC MOSFET power modules for future utilisation in railway converters.” 2013. Doctoral Dissertation, INP Toulouse. Accessed January 26, 2021. http://www.theses.fr/2013INPT0112.

MLA Handbook (7th Edition):

Fabre, Joseph. “Étude et mise en œuvre de modules de puissance MOSFET SiC pour leurs futures utilisations dans des convertisseurs ferroviaires : Study and implementation of SiC MOSFET power modules for future utilisation in railway converters.” 2013. Web. 26 Jan 2021.

Vancouver:

Fabre J. Étude et mise en œuvre de modules de puissance MOSFET SiC pour leurs futures utilisations dans des convertisseurs ferroviaires : Study and implementation of SiC MOSFET power modules for future utilisation in railway converters. [Internet] [Doctoral dissertation]. INP Toulouse; 2013. [cited 2021 Jan 26]. Available from: http://www.theses.fr/2013INPT0112.

Council of Science Editors:

Fabre J. Étude et mise en œuvre de modules de puissance MOSFET SiC pour leurs futures utilisations dans des convertisseurs ferroviaires : Study and implementation of SiC MOSFET power modules for future utilisation in railway converters. [Doctoral Dissertation]. INP Toulouse; 2013. Available from: http://www.theses.fr/2013INPT0112


INP Toulouse

11. Stackler, Caroline. Transformateurs électroniques pour applications ferroviaires : Electronic transformers for railway applications.

Degree: Docteur es, Génie Electrique, 2019, INP Toulouse

Actuellement, la majorité des convertisseurs embarqués dans des trains circulant sous une caténaire alternative est composée d’un transformateur basse fréquence, puis de redresseurs,alimentant des moteurs… (more)

Subjects/Keywords: Transformateurs électroniques; Méthodologie de dimensionnement; MOSFET SiC; Infrastructure ferroviaire; Interactions harmoniques; Power Electronic Traction Transformer (PETT); Sizing methodology; SiC MOSFET; Railway infrastructure; Harmonic interaction

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APA (6th Edition):

Stackler, C. (2019). Transformateurs électroniques pour applications ferroviaires : Electronic transformers for railway applications. (Doctoral Dissertation). INP Toulouse. Retrieved from http://www.theses.fr/2019INPT0015

Chicago Manual of Style (16th Edition):

Stackler, Caroline. “Transformateurs électroniques pour applications ferroviaires : Electronic transformers for railway applications.” 2019. Doctoral Dissertation, INP Toulouse. Accessed January 26, 2021. http://www.theses.fr/2019INPT0015.

MLA Handbook (7th Edition):

Stackler, Caroline. “Transformateurs électroniques pour applications ferroviaires : Electronic transformers for railway applications.” 2019. Web. 26 Jan 2021.

Vancouver:

Stackler C. Transformateurs électroniques pour applications ferroviaires : Electronic transformers for railway applications. [Internet] [Doctoral dissertation]. INP Toulouse; 2019. [cited 2021 Jan 26]. Available from: http://www.theses.fr/2019INPT0015.

Council of Science Editors:

Stackler C. Transformateurs électroniques pour applications ferroviaires : Electronic transformers for railway applications. [Doctoral Dissertation]. INP Toulouse; 2019. Available from: http://www.theses.fr/2019INPT0015


Brno University of Technology

12. Šandera, Tomáš. Třífázový střídač pro napájení vysokootáčkového asynchronního motoru: Three-phase converter for high-speed induction motor.

Degree: 2019, Brno University of Technology

 The master’s thesis deals with design and realization of three-phase inverter for experimental high speed asynchronous motor with a mechanical power of 6 kW. The… (more)

Subjects/Keywords: Třífázový střídač; SiC MOSFET tranzistor; vysokootáčkový asynchronní motor; napěťový meziobvod; elektrolytický kondenzátor; skalární řízení; Three-phase inverter; SiC MOSFET transistor; high speed asynchronous motor; DC link; electrolytic capacitor; scalar control

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APA (6th Edition):

Šandera, T. (2019). Třífázový střídač pro napájení vysokootáčkového asynchronního motoru: Three-phase converter for high-speed induction motor. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/66016

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Šandera, Tomáš. “Třífázový střídač pro napájení vysokootáčkového asynchronního motoru: Three-phase converter for high-speed induction motor.” 2019. Thesis, Brno University of Technology. Accessed January 26, 2021. http://hdl.handle.net/11012/66016.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Šandera, Tomáš. “Třífázový střídač pro napájení vysokootáčkového asynchronního motoru: Three-phase converter for high-speed induction motor.” 2019. Web. 26 Jan 2021.

Vancouver:

Šandera T. Třífázový střídač pro napájení vysokootáčkového asynchronního motoru: Three-phase converter for high-speed induction motor. [Internet] [Thesis]. Brno University of Technology; 2019. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/11012/66016.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Šandera T. Třífázový střídač pro napájení vysokootáčkového asynchronního motoru: Three-phase converter for high-speed induction motor. [Thesis]. Brno University of Technology; 2019. Available from: http://hdl.handle.net/11012/66016

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

13. Jankovský, Martin. Průzkum trhu výkonových polovodičových součástek: Market survey of high power semiconductor devices.

Degree: 2018, Brno University of Technology

 The main topic of the work are modern high power semiconductor devices. Emerging wide-band-gap materials and their electrical characteristics are also discussed. The work is… (more)

Subjects/Keywords: Materiály s velkou šířkou zakázaného pásu; SiC; GaN; dioda; JFET; MOSFET; Tyristor; IGBT; Wide-band gap materials; SiC; GaN; diode; JFET; MOSFET; Thyristor; IGBT

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jankovský, M. (2018). Průzkum trhu výkonových polovodičových součástek: Market survey of high power semiconductor devices. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/60567

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jankovský, Martin. “Průzkum trhu výkonových polovodičových součástek: Market survey of high power semiconductor devices.” 2018. Thesis, Brno University of Technology. Accessed January 26, 2021. http://hdl.handle.net/11012/60567.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jankovský, Martin. “Průzkum trhu výkonových polovodičových součástek: Market survey of high power semiconductor devices.” 2018. Web. 26 Jan 2021.

Vancouver:

Jankovský M. Průzkum trhu výkonových polovodičových součástek: Market survey of high power semiconductor devices. [Internet] [Thesis]. Brno University of Technology; 2018. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/11012/60567.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jankovský M. Průzkum trhu výkonových polovodičových součástek: Market survey of high power semiconductor devices. [Thesis]. Brno University of Technology; 2018. Available from: http://hdl.handle.net/11012/60567

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Colorado

14. Kim, Hyeok Jin. 98% Cafe EV Power Conversion System Design.

Degree: PhD, Electrical, Computer & Energy Engineering, 2017, University of Colorado

 With the stringent regulations on greenhouse gas emissions and constraints of energy sources, electrified vehicles have attracted attentions by automotive manufacturers and customers. Power conversion… (more)

Subjects/Keywords: converter; electric vehicle; inverter; MOSFET; power electronics; SiC; Electrical and Computer Engineering; Electrical and Electronics

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kim, H. J. (2017). 98% Cafe EV Power Conversion System Design. (Doctoral Dissertation). University of Colorado. Retrieved from https://scholar.colorado.edu/ecen_gradetds/142

Chicago Manual of Style (16th Edition):

Kim, Hyeok Jin. “98% Cafe EV Power Conversion System Design.” 2017. Doctoral Dissertation, University of Colorado. Accessed January 26, 2021. https://scholar.colorado.edu/ecen_gradetds/142.

MLA Handbook (7th Edition):

Kim, Hyeok Jin. “98% Cafe EV Power Conversion System Design.” 2017. Web. 26 Jan 2021.

Vancouver:

Kim HJ. 98% Cafe EV Power Conversion System Design. [Internet] [Doctoral dissertation]. University of Colorado; 2017. [cited 2021 Jan 26]. Available from: https://scholar.colorado.edu/ecen_gradetds/142.

Council of Science Editors:

Kim HJ. 98% Cafe EV Power Conversion System Design. [Doctoral Dissertation]. University of Colorado; 2017. Available from: https://scholar.colorado.edu/ecen_gradetds/142


ETH Zürich

15. Rothmund, Daniel. 10 kV SiC-Based Medium-Voltage Solid-State Transformer Concepts for 400V DC Distribution Systems.

Degree: 2018, ETH Zürich

 At the present time, the globalization and the digital revolution are the main drivers of the global economic growth, which, however, goes hand in hand… (more)

Subjects/Keywords: Power Electronics; Solid-state transformers (SSTs); SiC MOSFET; info:eu-repo/classification/ddc/621.3; Electric engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rothmund, D. (2018). 10 kV SiC-Based Medium-Voltage Solid-State Transformer Concepts for 400V DC Distribution Systems. (Doctoral Dissertation). ETH Zürich. Retrieved from http://hdl.handle.net/20.500.11850/331208

Chicago Manual of Style (16th Edition):

Rothmund, Daniel. “10 kV SiC-Based Medium-Voltage Solid-State Transformer Concepts for 400V DC Distribution Systems.” 2018. Doctoral Dissertation, ETH Zürich. Accessed January 26, 2021. http://hdl.handle.net/20.500.11850/331208.

MLA Handbook (7th Edition):

Rothmund, Daniel. “10 kV SiC-Based Medium-Voltage Solid-State Transformer Concepts for 400V DC Distribution Systems.” 2018. Web. 26 Jan 2021.

Vancouver:

Rothmund D. 10 kV SiC-Based Medium-Voltage Solid-State Transformer Concepts for 400V DC Distribution Systems. [Internet] [Doctoral dissertation]. ETH Zürich; 2018. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/20.500.11850/331208.

Council of Science Editors:

Rothmund D. 10 kV SiC-Based Medium-Voltage Solid-State Transformer Concepts for 400V DC Distribution Systems. [Doctoral Dissertation]. ETH Zürich; 2018. Available from: http://hdl.handle.net/20.500.11850/331208


University of Arkansas

16. Dearien, Audrey. Gating Methods for High-Voltage Silicon Carbide Power MOSFETs.

Degree: MSEE, 2018, University of Arkansas

  The objective of this thesis is to assess the challenges associated with driving Silicon Carbide (SiC) power devices, and to compare the potential gate… (more)

Subjects/Keywords: Gate Driver; MOSFET; Power Electronics; SiC; Silicon Carbide; Electrical and Electronics; Power and Energy

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APA (6th Edition):

Dearien, A. (2018). Gating Methods for High-Voltage Silicon Carbide Power MOSFETs. (Masters Thesis). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/2794

Chicago Manual of Style (16th Edition):

Dearien, Audrey. “Gating Methods for High-Voltage Silicon Carbide Power MOSFETs.” 2018. Masters Thesis, University of Arkansas. Accessed January 26, 2021. https://scholarworks.uark.edu/etd/2794.

MLA Handbook (7th Edition):

Dearien, Audrey. “Gating Methods for High-Voltage Silicon Carbide Power MOSFETs.” 2018. Web. 26 Jan 2021.

Vancouver:

Dearien A. Gating Methods for High-Voltage Silicon Carbide Power MOSFETs. [Internet] [Masters thesis]. University of Arkansas; 2018. [cited 2021 Jan 26]. Available from: https://scholarworks.uark.edu/etd/2794.

Council of Science Editors:

Dearien A. Gating Methods for High-Voltage Silicon Carbide Power MOSFETs. [Masters Thesis]. University of Arkansas; 2018. Available from: https://scholarworks.uark.edu/etd/2794


University of Tennessee – Knoxville

17. Huang, Xingxuan. Design and Switching Performance Evaluation of a 10 kV SiC MOSFET Based Phase Leg for Medium Voltage Applications.

Degree: MS, Electrical Engineering, 2019, University of Tennessee – Knoxville

 10 kV SiC MOSFETs are promising to substantially boost the performance of future medium voltage (MV) converters, ranging from MV motor drives to fast charging… (more)

Subjects/Keywords: 10 kV SiC MOSFET; phase leg; gate driver; switching performance; double pulse test

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APA (6th Edition):

Huang, X. (2019). Design and Switching Performance Evaluation of a 10 kV SiC MOSFET Based Phase Leg for Medium Voltage Applications. (Thesis). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_gradthes/5464

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Xingxuan. “Design and Switching Performance Evaluation of a 10 kV SiC MOSFET Based Phase Leg for Medium Voltage Applications.” 2019. Thesis, University of Tennessee – Knoxville. Accessed January 26, 2021. https://trace.tennessee.edu/utk_gradthes/5464.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Xingxuan. “Design and Switching Performance Evaluation of a 10 kV SiC MOSFET Based Phase Leg for Medium Voltage Applications.” 2019. Web. 26 Jan 2021.

Vancouver:

Huang X. Design and Switching Performance Evaluation of a 10 kV SiC MOSFET Based Phase Leg for Medium Voltage Applications. [Internet] [Thesis]. University of Tennessee – Knoxville; 2019. [cited 2021 Jan 26]. Available from: https://trace.tennessee.edu/utk_gradthes/5464.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang X. Design and Switching Performance Evaluation of a 10 kV SiC MOSFET Based Phase Leg for Medium Voltage Applications. [Thesis]. University of Tennessee – Knoxville; 2019. Available from: https://trace.tennessee.edu/utk_gradthes/5464

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Virginia Tech

18. Rong, Yu. A Synchronous Distributed Control and Communication Network for High-Frequency SiC-Based Modular Power Converters.

Degree: MS, Electrical Engineering, 2019, Virginia Tech

 The power electronics building block (PEBB) concept is proposed for medium-voltage converter applications in order to realize the modular design of the power stage. Traditionally,… (more)

Subjects/Keywords: communication network; distributed control; synchronization; low latency; modular power converters; SiC MOSFET

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APA (6th Edition):

Rong, Y. (2019). A Synchronous Distributed Control and Communication Network for High-Frequency SiC-Based Modular Power Converters. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/96395

Chicago Manual of Style (16th Edition):

Rong, Yu. “A Synchronous Distributed Control and Communication Network for High-Frequency SiC-Based Modular Power Converters.” 2019. Masters Thesis, Virginia Tech. Accessed January 26, 2021. http://hdl.handle.net/10919/96395.

MLA Handbook (7th Edition):

Rong, Yu. “A Synchronous Distributed Control and Communication Network for High-Frequency SiC-Based Modular Power Converters.” 2019. Web. 26 Jan 2021.

Vancouver:

Rong Y. A Synchronous Distributed Control and Communication Network for High-Frequency SiC-Based Modular Power Converters. [Internet] [Masters thesis]. Virginia Tech; 2019. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/10919/96395.

Council of Science Editors:

Rong Y. A Synchronous Distributed Control and Communication Network for High-Frequency SiC-Based Modular Power Converters. [Masters Thesis]. Virginia Tech; 2019. Available from: http://hdl.handle.net/10919/96395


Virginia Tech

19. Wang, Jun. Switching-Cycle Control and Sensing Techniques for High-Density SiC-Based Modular Converters.

Degree: PhD, Electrical Engineering, 2018, Virginia Tech

 Nowadays high power density has become an emerging need for the medium-voltage (MV) high-power converters in applications of power distribution systems in urban areas and… (more)

Subjects/Keywords: High-density; SiC MOSFET; modular multilevel converter; switching-cycle control; Rogowski switch-current sensor

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APA (6th Edition):

Wang, J. (2018). Switching-Cycle Control and Sensing Techniques for High-Density SiC-Based Modular Converters. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/83518

Chicago Manual of Style (16th Edition):

Wang, Jun. “Switching-Cycle Control and Sensing Techniques for High-Density SiC-Based Modular Converters.” 2018. Doctoral Dissertation, Virginia Tech. Accessed January 26, 2021. http://hdl.handle.net/10919/83518.

MLA Handbook (7th Edition):

Wang, Jun. “Switching-Cycle Control and Sensing Techniques for High-Density SiC-Based Modular Converters.” 2018. Web. 26 Jan 2021.

Vancouver:

Wang J. Switching-Cycle Control and Sensing Techniques for High-Density SiC-Based Modular Converters. [Internet] [Doctoral dissertation]. Virginia Tech; 2018. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/10919/83518.

Council of Science Editors:

Wang J. Switching-Cycle Control and Sensing Techniques for High-Density SiC-Based Modular Converters. [Doctoral Dissertation]. Virginia Tech; 2018. Available from: http://hdl.handle.net/10919/83518


Virginia Tech

20. Mocevic, Slavko. PCB-Embedded Phase Current Sensor and Short-Circuit Detector for High Power SiC-Based Converters.

Degree: MS, Electrical Engineering, 2018, Virginia Tech

 Together with renewable sources, electric vehicle will play an important role as a part of sustainable and renewable energy future by significantly reducing emissions of… (more)

Subjects/Keywords: SiC MOSFET; Rogowski coil; switch current sensor; phase current sensor; short-circuit protection; desaturation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mocevic, S. (2018). PCB-Embedded Phase Current Sensor and Short-Circuit Detector for High Power SiC-Based Converters. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/84348

Chicago Manual of Style (16th Edition):

Mocevic, Slavko. “PCB-Embedded Phase Current Sensor and Short-Circuit Detector for High Power SiC-Based Converters.” 2018. Masters Thesis, Virginia Tech. Accessed January 26, 2021. http://hdl.handle.net/10919/84348.

MLA Handbook (7th Edition):

Mocevic, Slavko. “PCB-Embedded Phase Current Sensor and Short-Circuit Detector for High Power SiC-Based Converters.” 2018. Web. 26 Jan 2021.

Vancouver:

Mocevic S. PCB-Embedded Phase Current Sensor and Short-Circuit Detector for High Power SiC-Based Converters. [Internet] [Masters thesis]. Virginia Tech; 2018. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/10919/84348.

Council of Science Editors:

Mocevic S. PCB-Embedded Phase Current Sensor and Short-Circuit Detector for High Power SiC-Based Converters. [Masters Thesis]. Virginia Tech; 2018. Available from: http://hdl.handle.net/10919/84348

21. Kampitsis, Georgios. Συμβολή στην ανάπτυξη μετατροπέων ισχύος με ημιαγωγούς καρβιδίου του πυριτίου και συμβατότητα με τους κώδικες δικτύου.

Degree: 2016, National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ)

In this Ph.D. dissertation, the utilization of Silicon Carbide (SiC) power devices in a grid connected photovoltaic (PV) inverter is investigated. Advanced control techniques for… (more)

Subjects/Keywords: Ανάστροφη αποκατάσταση; Αντιστροφέας; Αξιοπιστία; Βραχυκύκλωμα; Δυνατότητα αδιάλειπτης λειτουργίας; Καρβίδιο του πυριτίου; Κύκλωμα οδήγησης; Μηχανισμός διάσπασης; Κώδικες δικτύου; Φωτοβολταϊκά; SiC JFET; SiC MOSFET; Driver circuits; Failure mechanism; Fault Ride Through Capability; Grid Codes; Grid connected inverter; Photovoltaic; Reliability; Reverse recovery; Short circuit; Silicon Carbide (SiC); SiC JFET; SiC MOSFET

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APA (6th Edition):

Kampitsis, G. (2016). Συμβολή στην ανάπτυξη μετατροπέων ισχύος με ημιαγωγούς καρβιδίου του πυριτίου και συμβατότητα με τους κώδικες δικτύου. (Thesis). National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ). Retrieved from http://hdl.handle.net/10442/hedi/38467

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kampitsis, Georgios. “Συμβολή στην ανάπτυξη μετατροπέων ισχύος με ημιαγωγούς καρβιδίου του πυριτίου και συμβατότητα με τους κώδικες δικτύου.” 2016. Thesis, National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ). Accessed January 26, 2021. http://hdl.handle.net/10442/hedi/38467.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kampitsis, Georgios. “Συμβολή στην ανάπτυξη μετατροπέων ισχύος με ημιαγωγούς καρβιδίου του πυριτίου και συμβατότητα με τους κώδικες δικτύου.” 2016. Web. 26 Jan 2021.

Vancouver:

Kampitsis G. Συμβολή στην ανάπτυξη μετατροπέων ισχύος με ημιαγωγούς καρβιδίου του πυριτίου και συμβατότητα με τους κώδικες δικτύου. [Internet] [Thesis]. National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ); 2016. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/10442/hedi/38467.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kampitsis G. Συμβολή στην ανάπτυξη μετατροπέων ισχύος με ημιαγωγούς καρβιδίου του πυριτίου και συμβατότητα με τους κώδικες δικτύου. [Thesis]. National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ); 2016. Available from: http://hdl.handle.net/10442/hedi/38467

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Virginia Tech

22. Chen, Zheng. Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices.

Degree: MS, Electrical and Computer Engineering, 2009, Virginia Tech

 To support the study of potential utilization of the emerging silicon carbide (SiC) devices, two SiC active switches, namely 1.2 kV, 5 A SiC JFET… (more)

Subjects/Keywords: SiC MOSFET; SiC JFET; High switching speed; Parasitic impedances; Parametric study; Modeling; Characterization

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, Z. (2009). Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/30778

Chicago Manual of Style (16th Edition):

Chen, Zheng. “Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices.” 2009. Masters Thesis, Virginia Tech. Accessed January 26, 2021. http://hdl.handle.net/10919/30778.

MLA Handbook (7th Edition):

Chen, Zheng. “Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices.” 2009. Web. 26 Jan 2021.

Vancouver:

Chen Z. Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices. [Internet] [Masters thesis]. Virginia Tech; 2009. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/10919/30778.

Council of Science Editors:

Chen Z. Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices. [Masters Thesis]. Virginia Tech; 2009. Available from: http://hdl.handle.net/10919/30778

23. Harahap, Charles Ronald. Fully FPGA-Based Permanent Magnet Synchronous Motor Speed Control System Using Two-Degrees-of- Freedom Method Designed by Fictitious Reference Iterative Tuning : 擬似参照信号反復調整法で設計した2自由度制御手法を用いた全FPGA永久磁石同期電動機速度制御系に関する研究.

Degree: 博士(工学), 2017, Kyushu Institute of Technology / 九州工業大学

This dissertation proposes proportional-integral/proportional (PI-P) gain controller parameter tuning in a two-degrees-of-freedom (2DOF) control system using the fictitious reference iterative tuning (FRIT) method for permanent… (more)

Subjects/Keywords: Fictitious Reference Iterative Tuning; Field-Programmable Gate Array (FPGA); Two-Degrees-of-Freedom (2DOF); Permanent Magnet Synchronous Motor; SiC MOSFET Inverter

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APA (6th Edition):

Harahap, . C. R. (2017). Fully FPGA-Based Permanent Magnet Synchronous Motor Speed Control System Using Two-Degrees-of- Freedom Method Designed by Fictitious Reference Iterative Tuning : 擬似参照信号反復調整法で設計した2自由度制御手法を用いた全FPGA永久磁石同期電動機速度制御系に関する研究. (Thesis). Kyushu Institute of Technology / 九州工業大学. Retrieved from http://hdl.handle.net/10228/00006320

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Harahap, Charles Ronald. “Fully FPGA-Based Permanent Magnet Synchronous Motor Speed Control System Using Two-Degrees-of- Freedom Method Designed by Fictitious Reference Iterative Tuning : 擬似参照信号反復調整法で設計した2自由度制御手法を用いた全FPGA永久磁石同期電動機速度制御系に関する研究.” 2017. Thesis, Kyushu Institute of Technology / 九州工業大学. Accessed January 26, 2021. http://hdl.handle.net/10228/00006320.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Harahap, Charles Ronald. “Fully FPGA-Based Permanent Magnet Synchronous Motor Speed Control System Using Two-Degrees-of- Freedom Method Designed by Fictitious Reference Iterative Tuning : 擬似参照信号反復調整法で設計した2自由度制御手法を用いた全FPGA永久磁石同期電動機速度制御系に関する研究.” 2017. Web. 26 Jan 2021.

Vancouver:

Harahap CR. Fully FPGA-Based Permanent Magnet Synchronous Motor Speed Control System Using Two-Degrees-of- Freedom Method Designed by Fictitious Reference Iterative Tuning : 擬似参照信号反復調整法で設計した2自由度制御手法を用いた全FPGA永久磁石同期電動機速度制御系に関する研究. [Internet] [Thesis]. Kyushu Institute of Technology / 九州工業大学; 2017. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/10228/00006320.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Harahap CR. Fully FPGA-Based Permanent Magnet Synchronous Motor Speed Control System Using Two-Degrees-of- Freedom Method Designed by Fictitious Reference Iterative Tuning : 擬似参照信号反復調整法で設計した2自由度制御手法を用いた全FPGA永久磁石同期電動機速度制御系に関する研究. [Thesis]. Kyushu Institute of Technology / 九州工業大学; 2017. Available from: http://hdl.handle.net/10228/00006320

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

24. Speer, Kevin M. The Silicon Carbide Vacuum Field-Effect Transistor (VacFET).

Degree: PhD, EECS - Electrical Engineering, 2011, Case Western Reserve University School of Graduate Studies

  A novel field-effect transistor architecture is introduced that uses a micromachined, sealed vacuum cavity as the gate dielectric and 4H-SiC as the semiconductor material.… (more)

Subjects/Keywords: Electrical Engineering; Materials Science; Solid State Physics; silicon carbide; field-effect transistor; MOSFET; 4H-SiC; vacuum; gate dielectric; interface states

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APA (6th Edition):

Speer, K. M. (2011). The Silicon Carbide Vacuum Field-Effect Transistor (VacFET). (Doctoral Dissertation). Case Western Reserve University School of Graduate Studies. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=case1301445427

Chicago Manual of Style (16th Edition):

Speer, Kevin M. “The Silicon Carbide Vacuum Field-Effect Transistor (VacFET).” 2011. Doctoral Dissertation, Case Western Reserve University School of Graduate Studies. Accessed January 26, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=case1301445427.

MLA Handbook (7th Edition):

Speer, Kevin M. “The Silicon Carbide Vacuum Field-Effect Transistor (VacFET).” 2011. Web. 26 Jan 2021.

Vancouver:

Speer KM. The Silicon Carbide Vacuum Field-Effect Transistor (VacFET). [Internet] [Doctoral dissertation]. Case Western Reserve University School of Graduate Studies; 2011. [cited 2021 Jan 26]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=case1301445427.

Council of Science Editors:

Speer KM. The Silicon Carbide Vacuum Field-Effect Transistor (VacFET). [Doctoral Dissertation]. Case Western Reserve University School of Graduate Studies; 2011. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=case1301445427


Brno University of Technology

25. Španěl, Petr. Spínané zdroje: Switched Mode Power Supplies.

Degree: 2020, Brno University of Technology

 This thesis deals with switched mode power supplies based on resonant principle to achieve high efficiency. Several ways of switched mode power supplies optimalisation are… (more)

Subjects/Keywords: Rezonance; rezonanční měnič; sériová rezonance; spínaný zdroj; vysoká účinnost; SiC MOSFET; TO-247-4L; sériový rezonanční měnič; spínání v nule proudu; 3. generace SiC; Resonance; resonance converter; series resonance; switched mode power supply; high efficiency; SiC MOSFET; TO-247-4L; series resonant converter; zero voltage switching; 3rd generation SiC

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Španěl, P. (2020). Spínané zdroje: Switched Mode Power Supplies. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/195559

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Španěl, Petr. “Spínané zdroje: Switched Mode Power Supplies.” 2020. Thesis, Brno University of Technology. Accessed January 26, 2021. http://hdl.handle.net/11012/195559.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Španěl, Petr. “Spínané zdroje: Switched Mode Power Supplies.” 2020. Web. 26 Jan 2021.

Vancouver:

Španěl P. Spínané zdroje: Switched Mode Power Supplies. [Internet] [Thesis]. Brno University of Technology; 2020. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/11012/195559.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Španěl P. Spínané zdroje: Switched Mode Power Supplies. [Thesis]. Brno University of Technology; 2020. Available from: http://hdl.handle.net/11012/195559

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

26. Ouaida, Rémy. Vieillissement et mécanismes de dégradation sur des composants de puissance en carbure de silicium (SIC) pour des applications haute température : Aging and mechanisms on SiC power component for high temperature applications.

Degree: Docteur es, Génie électrique, 2014, Université Claude Bernard – Lyon I

Dans les années 2000, les composants de puissance en carbure de silicium (SiC) font leur apparition sur le marché industriel offrant d'excellentes performances. Elles se… (more)

Subjects/Keywords: MOSFET SiC; Robustesse d’oxyde; Dérive de la tension de seuil; Emballement du courant de fuite de grille statique; Mécanisme de défaillance; Loi de vieillissement; MOSFET SiC; Oxide robustness; Threshold voltage instability; Gate leakage current; Failure mechanism; Lifetime estimation; 621.31

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ouaida, R. (2014). Vieillissement et mécanismes de dégradation sur des composants de puissance en carbure de silicium (SIC) pour des applications haute température : Aging and mechanisms on SiC power component for high temperature applications. (Doctoral Dissertation). Université Claude Bernard – Lyon I. Retrieved from http://www.theses.fr/2014LYO10228

Chicago Manual of Style (16th Edition):

Ouaida, Rémy. “Vieillissement et mécanismes de dégradation sur des composants de puissance en carbure de silicium (SIC) pour des applications haute température : Aging and mechanisms on SiC power component for high temperature applications.” 2014. Doctoral Dissertation, Université Claude Bernard – Lyon I. Accessed January 26, 2021. http://www.theses.fr/2014LYO10228.

MLA Handbook (7th Edition):

Ouaida, Rémy. “Vieillissement et mécanismes de dégradation sur des composants de puissance en carbure de silicium (SIC) pour des applications haute température : Aging and mechanisms on SiC power component for high temperature applications.” 2014. Web. 26 Jan 2021.

Vancouver:

Ouaida R. Vieillissement et mécanismes de dégradation sur des composants de puissance en carbure de silicium (SIC) pour des applications haute température : Aging and mechanisms on SiC power component for high temperature applications. [Internet] [Doctoral dissertation]. Université Claude Bernard – Lyon I; 2014. [cited 2021 Jan 26]. Available from: http://www.theses.fr/2014LYO10228.

Council of Science Editors:

Ouaida R. Vieillissement et mécanismes de dégradation sur des composants de puissance en carbure de silicium (SIC) pour des applications haute température : Aging and mechanisms on SiC power component for high temperature applications. [Doctoral Dissertation]. Université Claude Bernard – Lyon I; 2014. Available from: http://www.theses.fr/2014LYO10228

27. Santini, Thomas. Contribution à l'étude de la fiabilité des MOSFETs en carbure de silicium : Study of silicon carbide MOSFETs reliability.

Degree: Docteur es, Génie électrique, 2016, Lyon

Ces dernières années ont vu apparaître sur le marché les premiers transistors de puissance de type MOSFET en carbure de silicium. Ce type de composant… (more)

Subjects/Keywords: Electronique; Electronique de puissance; MOSFET SiC; Fiabilité; Durée de vie; Test de dégradation accéléré; Processus gamma; Remaining Useful Life - RUL; Electronics; Power Electronics; MOSFET SiC; Reliability; Life time; Accelerated Degradation Test; Gamma Process; Remaining Useful Life - RUL; 621.317 072

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Santini, T. (2016). Contribution à l'étude de la fiabilité des MOSFETs en carbure de silicium : Study of silicon carbide MOSFETs reliability. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2016LYSEI021

Chicago Manual of Style (16th Edition):

Santini, Thomas. “Contribution à l'étude de la fiabilité des MOSFETs en carbure de silicium : Study of silicon carbide MOSFETs reliability.” 2016. Doctoral Dissertation, Lyon. Accessed January 26, 2021. http://www.theses.fr/2016LYSEI021.

MLA Handbook (7th Edition):

Santini, Thomas. “Contribution à l'étude de la fiabilité des MOSFETs en carbure de silicium : Study of silicon carbide MOSFETs reliability.” 2016. Web. 26 Jan 2021.

Vancouver:

Santini T. Contribution à l'étude de la fiabilité des MOSFETs en carbure de silicium : Study of silicon carbide MOSFETs reliability. [Internet] [Doctoral dissertation]. Lyon; 2016. [cited 2021 Jan 26]. Available from: http://www.theses.fr/2016LYSEI021.

Council of Science Editors:

Santini T. Contribution à l'étude de la fiabilité des MOSFETs en carbure de silicium : Study of silicon carbide MOSFETs reliability. [Doctoral Dissertation]. Lyon; 2016. Available from: http://www.theses.fr/2016LYSEI021

28. Roder, Raphaël. Intégration et fiabilité d'un disjoncteur statique silicium intelligent haute température pour application DC basse et moyenne tensions : Integration and reliability of a smart solid state circuit breaker for high temperature designed for low and medium DC voltage.

Degree: Docteur es, Electronique, 2015, Bordeaux

Cette thèse présente l'étude et la réalisation d'un disjoncteur statique tout silicium et intelligent pouvant fonctionner à haute température (200°C) pour des applications de type… (more)

Subjects/Keywords: Si-IGBT; Si-CoolMOSTM; SiC-MOSFET; Application haute température; Disjoncteur statique,; Traction électrique automobile; Centre de donnée; Puissance; Si-IGBT; Si-CoolMOSTM; SiC-MOSFET; High temperature application; Solid state circuit breaker,; Automotive application; Data center; Power semiconductor

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Roder, R. (2015). Intégration et fiabilité d'un disjoncteur statique silicium intelligent haute température pour application DC basse et moyenne tensions : Integration and reliability of a smart solid state circuit breaker for high temperature designed for low and medium DC voltage. (Doctoral Dissertation). Bordeaux. Retrieved from http://www.theses.fr/2015BORD0287

Chicago Manual of Style (16th Edition):

Roder, Raphaël. “Intégration et fiabilité d'un disjoncteur statique silicium intelligent haute température pour application DC basse et moyenne tensions : Integration and reliability of a smart solid state circuit breaker for high temperature designed for low and medium DC voltage.” 2015. Doctoral Dissertation, Bordeaux. Accessed January 26, 2021. http://www.theses.fr/2015BORD0287.

MLA Handbook (7th Edition):

Roder, Raphaël. “Intégration et fiabilité d'un disjoncteur statique silicium intelligent haute température pour application DC basse et moyenne tensions : Integration and reliability of a smart solid state circuit breaker for high temperature designed for low and medium DC voltage.” 2015. Web. 26 Jan 2021.

Vancouver:

Roder R. Intégration et fiabilité d'un disjoncteur statique silicium intelligent haute température pour application DC basse et moyenne tensions : Integration and reliability of a smart solid state circuit breaker for high temperature designed for low and medium DC voltage. [Internet] [Doctoral dissertation]. Bordeaux; 2015. [cited 2021 Jan 26]. Available from: http://www.theses.fr/2015BORD0287.

Council of Science Editors:

Roder R. Intégration et fiabilité d'un disjoncteur statique silicium intelligent haute température pour application DC basse et moyenne tensions : Integration and reliability of a smart solid state circuit breaker for high temperature designed for low and medium DC voltage. [Doctoral Dissertation]. Bordeaux; 2015. Available from: http://www.theses.fr/2015BORD0287


Kyoto University / 京都大学

29. Phankong, Nathabhat. Characterization of SiC Power Transistors for Power Conversion Circuits Based on C-V Measurement : SiCパワートランジスタのC-V測定に基づく電力変換回路のための特性評価.

Degree: 博士(工学), 2010, Kyoto University / 京都大学

新制・課程博士

甲第15668号

工博第3326号

Subjects/Keywords: SiC; MOSFET; JFET; C-V characteristics; Switching behavior; Device structure

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Phankong, N. (2010). Characterization of SiC Power Transistors for Power Conversion Circuits Based on C-V Measurement : SiCパワートランジスタのC-V測定に基づく電力変換回路のための特性評価. (Thesis). Kyoto University / 京都大学. Retrieved from http://hdl.handle.net/2433/126807 ; http://dx.doi.org/10.14989/doctor.k15668

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Phankong, Nathabhat. “Characterization of SiC Power Transistors for Power Conversion Circuits Based on C-V Measurement : SiCパワートランジスタのC-V測定に基づく電力変換回路のための特性評価.” 2010. Thesis, Kyoto University / 京都大学. Accessed January 26, 2021. http://hdl.handle.net/2433/126807 ; http://dx.doi.org/10.14989/doctor.k15668.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Phankong, Nathabhat. “Characterization of SiC Power Transistors for Power Conversion Circuits Based on C-V Measurement : SiCパワートランジスタのC-V測定に基づく電力変換回路のための特性評価.” 2010. Web. 26 Jan 2021.

Vancouver:

Phankong N. Characterization of SiC Power Transistors for Power Conversion Circuits Based on C-V Measurement : SiCパワートランジスタのC-V測定に基づく電力変換回路のための特性評価. [Internet] [Thesis]. Kyoto University / 京都大学; 2010. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/2433/126807 ; http://dx.doi.org/10.14989/doctor.k15668.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Phankong N. Characterization of SiC Power Transistors for Power Conversion Circuits Based on C-V Measurement : SiCパワートランジスタのC-V測定に基づく電力変換回路のための特性評価. [Thesis]. Kyoto University / 京都大学; 2010. Available from: http://hdl.handle.net/2433/126807 ; http://dx.doi.org/10.14989/doctor.k15668

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Kyoto University / 京都大学

30. Noborio, Masato. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究.

Degree: 博士(工学), 2009, Kyoto University / 京都大学

新制・課程博士

甲第14628号

工博第3096号

Subjects/Keywords: SiC; MIS; MOS; MISFET; MOSFET; power IC; power electronics; power device

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Noborio, M. (2009). Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究. (Thesis). Kyoto University / 京都大学. Retrieved from http://hdl.handle.net/2433/78006 ; http://dx.doi.org/10.14989/doctor.k14628

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Noborio, Masato. “Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究.” 2009. Thesis, Kyoto University / 京都大学. Accessed January 26, 2021. http://hdl.handle.net/2433/78006 ; http://dx.doi.org/10.14989/doctor.k14628.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Noborio, Masato. “Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究.” 2009. Web. 26 Jan 2021.

Vancouver:

Noborio M. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究. [Internet] [Thesis]. Kyoto University / 京都大学; 2009. [cited 2021 Jan 26]. Available from: http://hdl.handle.net/2433/78006 ; http://dx.doi.org/10.14989/doctor.k14628.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Noborio M. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究. [Thesis]. Kyoto University / 京都大学; 2009. Available from: http://hdl.handle.net/2433/78006 ; http://dx.doi.org/10.14989/doctor.k14628

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2]

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