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You searched for subject:(Semiconductor Fabrication). Showing records 1 – 30 of 116 total matches.

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Boise State University

1. Nichol, Tyler. Study and Application of Second-Order Effects of Processing in Ge-Se Thin Films for Non-Conventional CBRAM Array Fabrication.

Degree: 2016, Boise State University

 This work presents the study of Ge-Se chalcogenide glasses that are used for production of arrays of Redox-Conductive-Bridge-Memory (RCBM) devices, a type of emerging non-volatile… (more)

Subjects/Keywords: Memristor; array; semiconductor fabrication; materials characterization; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Nichol, T. (2016). Study and Application of Second-Order Effects of Processing in Ge-Se Thin Films for Non-Conventional CBRAM Array Fabrication. (Thesis). Boise State University. Retrieved from https://scholarworks.boisestate.edu/td/1102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Nichol, Tyler. “Study and Application of Second-Order Effects of Processing in Ge-Se Thin Films for Non-Conventional CBRAM Array Fabrication.” 2016. Thesis, Boise State University. Accessed June 25, 2019. https://scholarworks.boisestate.edu/td/1102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Nichol, Tyler. “Study and Application of Second-Order Effects of Processing in Ge-Se Thin Films for Non-Conventional CBRAM Array Fabrication.” 2016. Web. 25 Jun 2019.

Vancouver:

Nichol T. Study and Application of Second-Order Effects of Processing in Ge-Se Thin Films for Non-Conventional CBRAM Array Fabrication. [Internet] [Thesis]. Boise State University; 2016. [cited 2019 Jun 25]. Available from: https://scholarworks.boisestate.edu/td/1102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Nichol T. Study and Application of Second-Order Effects of Processing in Ge-Se Thin Films for Non-Conventional CBRAM Array Fabrication. [Thesis]. Boise State University; 2016. Available from: https://scholarworks.boisestate.edu/td/1102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

2. Alshehri, Bandar. Conception, fabrication et caractérisation de photodiodes à base de nitrures semiconducteurs : application aux composants ultra-rapides : Design, fabrication and characterization of III-nitrides-based photodiodes : application to high-speed devices.

Degree: Docteur es, Électronique. Micro et nano technologie, 2016, Valenciennes

Les matériaux semi-conducteurs à base de nitrures disposant de largeur de bande interdite allant de 0,7 à 6 eV, connaissent un intérêt sans cesse croissant… (more)

Subjects/Keywords: Nitrures semiconducteurs; Photodiodes; Conception et fabrication; Nitrides semiconductor; Photodiode; Design and fabrication

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APA (6th Edition):

Alshehri, B. (2016). Conception, fabrication et caractérisation de photodiodes à base de nitrures semiconducteurs : application aux composants ultra-rapides : Design, fabrication and characterization of III-nitrides-based photodiodes : application to high-speed devices. (Doctoral Dissertation). Valenciennes. Retrieved from http://www.theses.fr/2016VALE0022

Chicago Manual of Style (16th Edition):

Alshehri, Bandar. “Conception, fabrication et caractérisation de photodiodes à base de nitrures semiconducteurs : application aux composants ultra-rapides : Design, fabrication and characterization of III-nitrides-based photodiodes : application to high-speed devices.” 2016. Doctoral Dissertation, Valenciennes. Accessed June 25, 2019. http://www.theses.fr/2016VALE0022.

MLA Handbook (7th Edition):

Alshehri, Bandar. “Conception, fabrication et caractérisation de photodiodes à base de nitrures semiconducteurs : application aux composants ultra-rapides : Design, fabrication and characterization of III-nitrides-based photodiodes : application to high-speed devices.” 2016. Web. 25 Jun 2019.

Vancouver:

Alshehri B. Conception, fabrication et caractérisation de photodiodes à base de nitrures semiconducteurs : application aux composants ultra-rapides : Design, fabrication and characterization of III-nitrides-based photodiodes : application to high-speed devices. [Internet] [Doctoral dissertation]. Valenciennes; 2016. [cited 2019 Jun 25]. Available from: http://www.theses.fr/2016VALE0022.

Council of Science Editors:

Alshehri B. Conception, fabrication et caractérisation de photodiodes à base de nitrures semiconducteurs : application aux composants ultra-rapides : Design, fabrication and characterization of III-nitrides-based photodiodes : application to high-speed devices. [Doctoral Dissertation]. Valenciennes; 2016. Available from: http://www.theses.fr/2016VALE0022


University of Kentucky

3. Boyd, Darren Ray. A Multi-Physics Computational Approach to Simulating THz Photoconductive Antennas with Comparison to Measured Data and Fabrication of Samples.

Degree: 2014, University of Kentucky

 The frequency demands of radiating systems are moving into the terahertz band with potential applications that include sensing, imaging, and extremely broadband communication. One commonly… (more)

Subjects/Keywords: Computational Electromagnetics; Photoconductive Antenna; Device Fabrication; Semiconductor Physics; Electromagnetics; Electromagnetics and Photonics; Electronic Devices and Semiconductor Manufacturing; Nanotechnology Fabrication

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APA (6th Edition):

Boyd, D. R. (2014). A Multi-Physics Computational Approach to Simulating THz Photoconductive Antennas with Comparison to Measured Data and Fabrication of Samples. (Masters Thesis). University of Kentucky. Retrieved from http://uknowledge.uky.edu/ece_etds/39

Chicago Manual of Style (16th Edition):

Boyd, Darren Ray. “A Multi-Physics Computational Approach to Simulating THz Photoconductive Antennas with Comparison to Measured Data and Fabrication of Samples.” 2014. Masters Thesis, University of Kentucky. Accessed June 25, 2019. http://uknowledge.uky.edu/ece_etds/39.

MLA Handbook (7th Edition):

Boyd, Darren Ray. “A Multi-Physics Computational Approach to Simulating THz Photoconductive Antennas with Comparison to Measured Data and Fabrication of Samples.” 2014. Web. 25 Jun 2019.

Vancouver:

Boyd DR. A Multi-Physics Computational Approach to Simulating THz Photoconductive Antennas with Comparison to Measured Data and Fabrication of Samples. [Internet] [Masters thesis]. University of Kentucky; 2014. [cited 2019 Jun 25]. Available from: http://uknowledge.uky.edu/ece_etds/39.

Council of Science Editors:

Boyd DR. A Multi-Physics Computational Approach to Simulating THz Photoconductive Antennas with Comparison to Measured Data and Fabrication of Samples. [Masters Thesis]. University of Kentucky; 2014. Available from: http://uknowledge.uky.edu/ece_etds/39


Northeastern University

4. Ma, Zheng. Synthesis, properties and applications of GaN nanowires.

Degree: PhD, Department of Physics, 2013, Northeastern University

 This main focus of the work is on controlling the growth morphology in GaN and related nanowires. Two key results are presented: (1) demonstration of… (more)

Subjects/Keywords: chemical vapor deposition; GaN; nanotechnology; nanowires; semiconductor; Nanotechnology fabrication; Physics

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APA (6th Edition):

Ma, Z. (2013). Synthesis, properties and applications of GaN nanowires. (Doctoral Dissertation). Northeastern University. Retrieved from http://hdl.handle.net/2047/d20003131

Chicago Manual of Style (16th Edition):

Ma, Zheng. “Synthesis, properties and applications of GaN nanowires.” 2013. Doctoral Dissertation, Northeastern University. Accessed June 25, 2019. http://hdl.handle.net/2047/d20003131.

MLA Handbook (7th Edition):

Ma, Zheng. “Synthesis, properties and applications of GaN nanowires.” 2013. Web. 25 Jun 2019.

Vancouver:

Ma Z. Synthesis, properties and applications of GaN nanowires. [Internet] [Doctoral dissertation]. Northeastern University; 2013. [cited 2019 Jun 25]. Available from: http://hdl.handle.net/2047/d20003131.

Council of Science Editors:

Ma Z. Synthesis, properties and applications of GaN nanowires. [Doctoral Dissertation]. Northeastern University; 2013. Available from: http://hdl.handle.net/2047/d20003131


Louisiana State University

5. Shao, Hua. The design and fabrication of pentacene acoustic charge transfer devices.

Degree: MS, Electrical and Computer Engineering, 2008, Louisiana State University

 Acoustic charge transport (ACT) devices are used to transfer electrical signals by surface acoustic waves (SAW), which are generated by interdigital transducers (IDT) on piezoelectric… (more)

Subjects/Keywords: fabrication; electronics; semiconductor; SAW devices

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APA (6th Edition):

Shao, H. (2008). The design and fabrication of pentacene acoustic charge transfer devices. (Masters Thesis). Louisiana State University. Retrieved from etd-04012008-101702 ; https://digitalcommons.lsu.edu/gradschool_theses/1903

Chicago Manual of Style (16th Edition):

Shao, Hua. “The design and fabrication of pentacene acoustic charge transfer devices.” 2008. Masters Thesis, Louisiana State University. Accessed June 25, 2019. etd-04012008-101702 ; https://digitalcommons.lsu.edu/gradschool_theses/1903.

MLA Handbook (7th Edition):

Shao, Hua. “The design and fabrication of pentacene acoustic charge transfer devices.” 2008. Web. 25 Jun 2019.

Vancouver:

Shao H. The design and fabrication of pentacene acoustic charge transfer devices. [Internet] [Masters thesis]. Louisiana State University; 2008. [cited 2019 Jun 25]. Available from: etd-04012008-101702 ; https://digitalcommons.lsu.edu/gradschool_theses/1903.

Council of Science Editors:

Shao H. The design and fabrication of pentacene acoustic charge transfer devices. [Masters Thesis]. Louisiana State University; 2008. Available from: etd-04012008-101702 ; https://digitalcommons.lsu.edu/gradschool_theses/1903


University of Texas – Austin

6. Hord, Samuel Kay. A novel fabrication process for CMUTs in air.

Degree: Mechanical Engineering, 2018, University of Texas – Austin

 A novel fabrication method for producing capacitive micromachined ultrasonic transducers (CMUTs) is presented. The process uses conductive silicon on insulator (SOI) substrates to produce an… (more)

Subjects/Keywords: CMUT; Ultrasonic transducers; Transducers; Semiconductor fabrication; Acoustics; Acoustical MEMS; MEMS

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APA (6th Edition):

Hord, S. K. (2018). A novel fabrication process for CMUTs in air. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/69092

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hord, Samuel Kay. “A novel fabrication process for CMUTs in air.” 2018. Thesis, University of Texas – Austin. Accessed June 25, 2019. http://hdl.handle.net/2152/69092.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hord, Samuel Kay. “A novel fabrication process for CMUTs in air.” 2018. Web. 25 Jun 2019.

Vancouver:

Hord SK. A novel fabrication process for CMUTs in air. [Internet] [Thesis]. University of Texas – Austin; 2018. [cited 2019 Jun 25]. Available from: http://hdl.handle.net/2152/69092.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hord SK. A novel fabrication process for CMUTs in air. [Thesis]. University of Texas – Austin; 2018. Available from: http://hdl.handle.net/2152/69092

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New Mexico

7. Kondapi, Aneesha. Fabrication of Hybrid Optical Electrical Platforms for Potential Applications in Neuromodulation.

Degree: Electrical and Computer Engineering, 2016, University of New Mexico

  State-of-the art neuromodulators are bulky, and they are mostly fabricated on rigid substrates. Furthermore, they are not provided with a feedback control loop re-… (more)

Subjects/Keywords: Semiconductor fabrication; Nanomembranes; Neuromodulation; 3D nanostructures; Electrical and Computer Engineering

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APA (6th Edition):

Kondapi, A. (2016). Fabrication of Hybrid Optical Electrical Platforms for Potential Applications in Neuromodulation. (Masters Thesis). University of New Mexico. Retrieved from http://hdl.handle.net/1928/32962

Chicago Manual of Style (16th Edition):

Kondapi, Aneesha. “Fabrication of Hybrid Optical Electrical Platforms for Potential Applications in Neuromodulation.” 2016. Masters Thesis, University of New Mexico. Accessed June 25, 2019. http://hdl.handle.net/1928/32962.

MLA Handbook (7th Edition):

Kondapi, Aneesha. “Fabrication of Hybrid Optical Electrical Platforms for Potential Applications in Neuromodulation.” 2016. Web. 25 Jun 2019.

Vancouver:

Kondapi A. Fabrication of Hybrid Optical Electrical Platforms for Potential Applications in Neuromodulation. [Internet] [Masters thesis]. University of New Mexico; 2016. [cited 2019 Jun 25]. Available from: http://hdl.handle.net/1928/32962.

Council of Science Editors:

Kondapi A. Fabrication of Hybrid Optical Electrical Platforms for Potential Applications in Neuromodulation. [Masters Thesis]. University of New Mexico; 2016. Available from: http://hdl.handle.net/1928/32962


University of Kentucky

8. Nadimpally, Bhavananda R. Copper Indium Diselenide Nanowire Arrays in Alumina Membranes Deposited on Molybdenum and Other Back Contact Substrates.

Degree: 2013, University of Kentucky

 Heterojunctions of CuInSe2 (CIS) nanowires with cadmium sulfide (CdS) were fabricated demonstrating for the first time, vertically aligned nanowires of CIS in the conventional Mo/CIS/CdS… (more)

Subjects/Keywords: AAO; CuInSe2; Nanowires; Photovoltaic; LP-EBID; Electronic Devices and Semiconductor Manufacturing; Nanotechnology Fabrication; Power and Energy; Semiconductor and Optical Materials

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APA (6th Edition):

Nadimpally, B. R. (2013). Copper Indium Diselenide Nanowire Arrays in Alumina Membranes Deposited on Molybdenum and Other Back Contact Substrates. (Doctoral Dissertation). University of Kentucky. Retrieved from http://uknowledge.uky.edu/ece_etds/28

Chicago Manual of Style (16th Edition):

Nadimpally, Bhavananda R. “Copper Indium Diselenide Nanowire Arrays in Alumina Membranes Deposited on Molybdenum and Other Back Contact Substrates.” 2013. Doctoral Dissertation, University of Kentucky. Accessed June 25, 2019. http://uknowledge.uky.edu/ece_etds/28.

MLA Handbook (7th Edition):

Nadimpally, Bhavananda R. “Copper Indium Diselenide Nanowire Arrays in Alumina Membranes Deposited on Molybdenum and Other Back Contact Substrates.” 2013. Web. 25 Jun 2019.

Vancouver:

Nadimpally BR. Copper Indium Diselenide Nanowire Arrays in Alumina Membranes Deposited on Molybdenum and Other Back Contact Substrates. [Internet] [Doctoral dissertation]. University of Kentucky; 2013. [cited 2019 Jun 25]. Available from: http://uknowledge.uky.edu/ece_etds/28.

Council of Science Editors:

Nadimpally BR. Copper Indium Diselenide Nanowire Arrays in Alumina Membranes Deposited on Molybdenum and Other Back Contact Substrates. [Doctoral Dissertation]. University of Kentucky; 2013. Available from: http://uknowledge.uky.edu/ece_etds/28


University of Arkansas

9. Vasan, Ramesh. Intermediate Band Solar Cells Based on InAs Quantum Dots Embedded in InGaAs Quantum Well.

Degree: MSEE, 2013, University of Arkansas

  Intermediate band solar cells based on quantum dots and quantum wells with anti-reflection coating are investigated in this thesis. The demand for high efficient… (more)

Subjects/Keywords: Applied sciences; Intermediate band solar cells; Semiconductor quantum structures; Semiconductor solar cells; Electrical and Electronics; Nanotechnology Fabrication; Power and Energy

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APA (6th Edition):

Vasan, R. (2013). Intermediate Band Solar Cells Based on InAs Quantum Dots Embedded in InGaAs Quantum Well. (Masters Thesis). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/779

Chicago Manual of Style (16th Edition):

Vasan, Ramesh. “Intermediate Band Solar Cells Based on InAs Quantum Dots Embedded in InGaAs Quantum Well.” 2013. Masters Thesis, University of Arkansas. Accessed June 25, 2019. https://scholarworks.uark.edu/etd/779.

MLA Handbook (7th Edition):

Vasan, Ramesh. “Intermediate Band Solar Cells Based on InAs Quantum Dots Embedded in InGaAs Quantum Well.” 2013. Web. 25 Jun 2019.

Vancouver:

Vasan R. Intermediate Band Solar Cells Based on InAs Quantum Dots Embedded in InGaAs Quantum Well. [Internet] [Masters thesis]. University of Arkansas; 2013. [cited 2019 Jun 25]. Available from: https://scholarworks.uark.edu/etd/779.

Council of Science Editors:

Vasan R. Intermediate Band Solar Cells Based on InAs Quantum Dots Embedded in InGaAs Quantum Well. [Masters Thesis]. University of Arkansas; 2013. Available from: https://scholarworks.uark.edu/etd/779


University of Arkansas

10. Grant, Perry C. Investigation of the Effects of Rapid Thermal Annealing on MBE Grown GaAsBi/GaAs Heterostructures for Optoelectronic Devices.

Degree: MS, 2013, University of Arkansas

  High efficiency optoelectronic devices rely on high quality materials making up the device structure. The scope of this thesis investigates the effectiveness of rapid… (more)

Subjects/Keywords: Applied sciences; Opto electronics; Rapid thermal annealing; Electrical and Electronics; Electronic Devices and Semiconductor Manufacturing; Nanotechnology Fabrication; Semiconductor and Optical Materials

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APA (6th Edition):

Grant, P. C. (2013). Investigation of the Effects of Rapid Thermal Annealing on MBE Grown GaAsBi/GaAs Heterostructures for Optoelectronic Devices. (Masters Thesis). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/957

Chicago Manual of Style (16th Edition):

Grant, Perry C. “Investigation of the Effects of Rapid Thermal Annealing on MBE Grown GaAsBi/GaAs Heterostructures for Optoelectronic Devices.” 2013. Masters Thesis, University of Arkansas. Accessed June 25, 2019. https://scholarworks.uark.edu/etd/957.

MLA Handbook (7th Edition):

Grant, Perry C. “Investigation of the Effects of Rapid Thermal Annealing on MBE Grown GaAsBi/GaAs Heterostructures for Optoelectronic Devices.” 2013. Web. 25 Jun 2019.

Vancouver:

Grant PC. Investigation of the Effects of Rapid Thermal Annealing on MBE Grown GaAsBi/GaAs Heterostructures for Optoelectronic Devices. [Internet] [Masters thesis]. University of Arkansas; 2013. [cited 2019 Jun 25]. Available from: https://scholarworks.uark.edu/etd/957.

Council of Science Editors:

Grant PC. Investigation of the Effects of Rapid Thermal Annealing on MBE Grown GaAsBi/GaAs Heterostructures for Optoelectronic Devices. [Masters Thesis]. University of Arkansas; 2013. Available from: https://scholarworks.uark.edu/etd/957


McMaster University

11. Jewell, Nikolaus A. Reactive Magnetron Sputtering as a Growth Alternative for Gallium Nitride Nanowires.

Degree: MASc, 2014, McMaster University

Gallium nitride (GaN) nanowires are high-performance materials with wide, direct bandgaps and superior electronic properties. Although their properties make them of great interest for… (more)

Subjects/Keywords: gallium nitride; nanowires; sputtering; Electronic Devices and Semiconductor Manufacturing; Nanoscience and Nanotechnology; Nanotechnology fabrication; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Jewell, N. A. (2014). Reactive Magnetron Sputtering as a Growth Alternative for Gallium Nitride Nanowires. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/14122

Chicago Manual of Style (16th Edition):

Jewell, Nikolaus A. “Reactive Magnetron Sputtering as a Growth Alternative for Gallium Nitride Nanowires.” 2014. Masters Thesis, McMaster University. Accessed June 25, 2019. http://hdl.handle.net/11375/14122.

MLA Handbook (7th Edition):

Jewell, Nikolaus A. “Reactive Magnetron Sputtering as a Growth Alternative for Gallium Nitride Nanowires.” 2014. Web. 25 Jun 2019.

Vancouver:

Jewell NA. Reactive Magnetron Sputtering as a Growth Alternative for Gallium Nitride Nanowires. [Internet] [Masters thesis]. McMaster University; 2014. [cited 2019 Jun 25]. Available from: http://hdl.handle.net/11375/14122.

Council of Science Editors:

Jewell NA. Reactive Magnetron Sputtering as a Growth Alternative for Gallium Nitride Nanowires. [Masters Thesis]. McMaster University; 2014. Available from: http://hdl.handle.net/11375/14122


University of Louisville

12. Ratnayake, Dilan. Strategies and techniques for fabricating MEMS bistable thermal actuators.

Degree: PhD, 2016, University of Louisville

  Bistable elements are beginning to appear in the field of MEMS as they allow engineers to design sensors and actuators which require no electrical… (more)

Subjects/Keywords: MEMS; bistable; buckling; 3D; stress; actuator; Electronic Devices and Semiconductor Manufacturing; Nanotechnology Fabrication

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APA (6th Edition):

Ratnayake, D. (2016). Strategies and techniques for fabricating MEMS bistable thermal actuators. (Doctoral Dissertation). University of Louisville. Retrieved from 10.18297/etd/2586 ; https://ir.library.louisville.edu/etd/2586

Chicago Manual of Style (16th Edition):

Ratnayake, Dilan. “Strategies and techniques for fabricating MEMS bistable thermal actuators.” 2016. Doctoral Dissertation, University of Louisville. Accessed June 25, 2019. 10.18297/etd/2586 ; https://ir.library.louisville.edu/etd/2586.

MLA Handbook (7th Edition):

Ratnayake, Dilan. “Strategies and techniques for fabricating MEMS bistable thermal actuators.” 2016. Web. 25 Jun 2019.

Vancouver:

Ratnayake D. Strategies and techniques for fabricating MEMS bistable thermal actuators. [Internet] [Doctoral dissertation]. University of Louisville; 2016. [cited 2019 Jun 25]. Available from: 10.18297/etd/2586 ; https://ir.library.louisville.edu/etd/2586.

Council of Science Editors:

Ratnayake D. Strategies and techniques for fabricating MEMS bistable thermal actuators. [Doctoral Dissertation]. University of Louisville; 2016. Available from: 10.18297/etd/2586 ; https://ir.library.louisville.edu/etd/2586

13. Knopp, Sebastian. Complex Job-Shop Scheduling with Batching in Semiconductor Manufacturing : Ordonnancement d’ateliers complexes de type job-shop avec machines à traitement par batch en fabrication de semi-conducteurs.

Degree: Docteur es, Génie Industriel, 2016, Lyon

La prise en compte de machines à traitement par batch dans les problèmes d’ordonnancement d’ateliers complexes de type job-shop est particulièrement difficile. La fabrication de… (more)

Subjects/Keywords: Ordonnancement; Graphe Disjonctif; Fabrication de semi-conducteurs; Optimisation; Scheduling; Disjunctive graphs; Semiconductor Manufacturing; Optimization

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APA (6th Edition):

Knopp, S. (2016). Complex Job-Shop Scheduling with Batching in Semiconductor Manufacturing : Ordonnancement d’ateliers complexes de type job-shop avec machines à traitement par batch en fabrication de semi-conducteurs. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2016LYSEM014

Chicago Manual of Style (16th Edition):

Knopp, Sebastian. “Complex Job-Shop Scheduling with Batching in Semiconductor Manufacturing : Ordonnancement d’ateliers complexes de type job-shop avec machines à traitement par batch en fabrication de semi-conducteurs.” 2016. Doctoral Dissertation, Lyon. Accessed June 25, 2019. http://www.theses.fr/2016LYSEM014.

MLA Handbook (7th Edition):

Knopp, Sebastian. “Complex Job-Shop Scheduling with Batching in Semiconductor Manufacturing : Ordonnancement d’ateliers complexes de type job-shop avec machines à traitement par batch en fabrication de semi-conducteurs.” 2016. Web. 25 Jun 2019.

Vancouver:

Knopp S. Complex Job-Shop Scheduling with Batching in Semiconductor Manufacturing : Ordonnancement d’ateliers complexes de type job-shop avec machines à traitement par batch en fabrication de semi-conducteurs. [Internet] [Doctoral dissertation]. Lyon; 2016. [cited 2019 Jun 25]. Available from: http://www.theses.fr/2016LYSEM014.

Council of Science Editors:

Knopp S. Complex Job-Shop Scheduling with Batching in Semiconductor Manufacturing : Ordonnancement d’ateliers complexes de type job-shop avec machines à traitement par batch en fabrication de semi-conducteurs. [Doctoral Dissertation]. Lyon; 2016. Available from: http://www.theses.fr/2016LYSEM014


University of Tennessee – Knoxville

14. Mostafa, Salwa. Modeling And Development Of A MEMS Device For Pyroelectric Energy Scavenging.

Degree: 2011, University of Tennessee – Knoxville

 As the world faces an energy crisis with depleting fossil fuel reserves, alternate energy sources are being researched ever more seriously. In addition to renewable… (more)

Subjects/Keywords: MEMS; Pyroelectric; Energy scavenging; Modeling; Electronic Devices and Semiconductor Manufacturing; Mechanics of Materials; Nanotechnology Fabrication

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APA (6th Edition):

Mostafa, S. (2011). Modeling And Development Of A MEMS Device For Pyroelectric Energy Scavenging. (Doctoral Dissertation). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_graddiss/1208

Chicago Manual of Style (16th Edition):

Mostafa, Salwa. “Modeling And Development Of A MEMS Device For Pyroelectric Energy Scavenging.” 2011. Doctoral Dissertation, University of Tennessee – Knoxville. Accessed June 25, 2019. https://trace.tennessee.edu/utk_graddiss/1208.

MLA Handbook (7th Edition):

Mostafa, Salwa. “Modeling And Development Of A MEMS Device For Pyroelectric Energy Scavenging.” 2011. Web. 25 Jun 2019.

Vancouver:

Mostafa S. Modeling And Development Of A MEMS Device For Pyroelectric Energy Scavenging. [Internet] [Doctoral dissertation]. University of Tennessee – Knoxville; 2011. [cited 2019 Jun 25]. Available from: https://trace.tennessee.edu/utk_graddiss/1208.

Council of Science Editors:

Mostafa S. Modeling And Development Of A MEMS Device For Pyroelectric Energy Scavenging. [Doctoral Dissertation]. University of Tennessee – Knoxville; 2011. Available from: https://trace.tennessee.edu/utk_graddiss/1208


Florida International University

15. Al-Amin, Chowdhury G. Advanced Graphene Microelectronic Devices.

Degree: PhD, Electrical Engineering, 2016, Florida International University

  The outstanding electrical and material properties of Graphene have made it a promising material for several fields of analog applications, though its zero bandgap… (more)

Subjects/Keywords: Graphene; Transistor; Bandgap; Plasmonics; Electrical and Electronics; Electronic Devices and Semiconductor Manufacturing; Nanotechnology Fabrication

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APA (6th Edition):

Al-Amin, C. G. (2016). Advanced Graphene Microelectronic Devices. (Doctoral Dissertation). Florida International University. Retrieved from http://digitalcommons.fiu.edu/etd/2512 ; 10.25148/etd.FIDC000252 ; FIDC000252

Chicago Manual of Style (16th Edition):

Al-Amin, Chowdhury G. “Advanced Graphene Microelectronic Devices.” 2016. Doctoral Dissertation, Florida International University. Accessed June 25, 2019. http://digitalcommons.fiu.edu/etd/2512 ; 10.25148/etd.FIDC000252 ; FIDC000252.

MLA Handbook (7th Edition):

Al-Amin, Chowdhury G. “Advanced Graphene Microelectronic Devices.” 2016. Web. 25 Jun 2019.

Vancouver:

Al-Amin CG. Advanced Graphene Microelectronic Devices. [Internet] [Doctoral dissertation]. Florida International University; 2016. [cited 2019 Jun 25]. Available from: http://digitalcommons.fiu.edu/etd/2512 ; 10.25148/etd.FIDC000252 ; FIDC000252.

Council of Science Editors:

Al-Amin CG. Advanced Graphene Microelectronic Devices. [Doctoral Dissertation]. Florida International University; 2016. Available from: http://digitalcommons.fiu.edu/etd/2512 ; 10.25148/etd.FIDC000252 ; FIDC000252


Boise State University

16. Davis, Morgan Gregory. Synthesis, Characterization, and Device Fabrication Utilizing Novel Metal-Doped Germanium Selenide Phase-Change Memory Materials.

Degree: 2010, Boise State University

 Ge2Se3 glasses were synthesized with the goal of creating new materials for use as multi-state phase-change memory (PCM) materials. Glasses were doped with small amounts… (more)

Subjects/Keywords: Germanium Selenide; Phase-Change Memory; Amorphous; Device Fabrication; Semiconductor and Optical Materials

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APA (6th Edition):

Davis, M. G. (2010). Synthesis, Characterization, and Device Fabrication Utilizing Novel Metal-Doped Germanium Selenide Phase-Change Memory Materials. (Thesis). Boise State University. Retrieved from https://scholarworks.boisestate.edu/td/132

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Davis, Morgan Gregory. “Synthesis, Characterization, and Device Fabrication Utilizing Novel Metal-Doped Germanium Selenide Phase-Change Memory Materials.” 2010. Thesis, Boise State University. Accessed June 25, 2019. https://scholarworks.boisestate.edu/td/132.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Davis, Morgan Gregory. “Synthesis, Characterization, and Device Fabrication Utilizing Novel Metal-Doped Germanium Selenide Phase-Change Memory Materials.” 2010. Web. 25 Jun 2019.

Vancouver:

Davis MG. Synthesis, Characterization, and Device Fabrication Utilizing Novel Metal-Doped Germanium Selenide Phase-Change Memory Materials. [Internet] [Thesis]. Boise State University; 2010. [cited 2019 Jun 25]. Available from: https://scholarworks.boisestate.edu/td/132.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Davis MG. Synthesis, Characterization, and Device Fabrication Utilizing Novel Metal-Doped Germanium Selenide Phase-Change Memory Materials. [Thesis]. Boise State University; 2010. Available from: https://scholarworks.boisestate.edu/td/132

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Boise State University

17. Ailavajhala, Mahesh Satyanarayana. Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, and Testing.

Degree: 2014, Boise State University

 For decades, various radiation-detecting materials have been extensively researched, to find a better material or mechanism. Recently, there has been a growing need for smaller,… (more)

Subjects/Keywords: Chalcogenide glasses; Ag containing glasses; Radiation Sensor; Electronic Devices and Semiconductor Manufacturing; Nanotechnology Fabrication

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APA (6th Edition):

Ailavajhala, M. S. (2014). Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, and Testing. (Thesis). Boise State University. Retrieved from https://scholarworks.boisestate.edu/td/814

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ailavajhala, Mahesh Satyanarayana. “Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, and Testing.” 2014. Thesis, Boise State University. Accessed June 25, 2019. https://scholarworks.boisestate.edu/td/814.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ailavajhala, Mahesh Satyanarayana. “Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, and Testing.” 2014. Web. 25 Jun 2019.

Vancouver:

Ailavajhala MS. Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, and Testing. [Internet] [Thesis]. Boise State University; 2014. [cited 2019 Jun 25]. Available from: https://scholarworks.boisestate.edu/td/814.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ailavajhala MS. Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, and Testing. [Thesis]. Boise State University; 2014. Available from: https://scholarworks.boisestate.edu/td/814

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arkansas

18. Minor, Steven Paul. Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication.

Degree: MS, 2012, University of Arkansas

  The need for energy conservation has heightened the search for new materials that can reduce energy consumption or produce energy by the means of… (more)

Subjects/Keywords: Applied sciences; Growth dynamics; Indium nitride; Nanotechnology Fabrication; Semiconductor and Optical Materials

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APA (6th Edition):

Minor, S. P. (2012). Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication. (Masters Thesis). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/267

Chicago Manual of Style (16th Edition):

Minor, Steven Paul. “Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication.” 2012. Masters Thesis, University of Arkansas. Accessed June 25, 2019. https://scholarworks.uark.edu/etd/267.

MLA Handbook (7th Edition):

Minor, Steven Paul. “Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication.” 2012. Web. 25 Jun 2019.

Vancouver:

Minor SP. Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication. [Internet] [Masters thesis]. University of Arkansas; 2012. [cited 2019 Jun 25]. Available from: https://scholarworks.uark.edu/etd/267.

Council of Science Editors:

Minor SP. Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication. [Masters Thesis]. University of Arkansas; 2012. Available from: https://scholarworks.uark.edu/etd/267


Iowa State University

19. Zhang, Liang. Device physics of perovskite solar cells.

Degree: 2017, Iowa State University

 Perovskite solar cell has attracted great attention recently because of its great potential. However, detailed information on electronic defects is still unknown. Here, we report… (more)

Subjects/Keywords: Degradation; Device Physics; Fabrication process; Perovskite; Semiconductor; Solar cells; Electrical and Electronics

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APA (6th Edition):

Zhang, L. (2017). Device physics of perovskite solar cells. (Thesis). Iowa State University. Retrieved from https://lib.dr.iastate.edu/etd/16301

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Liang. “Device physics of perovskite solar cells.” 2017. Thesis, Iowa State University. Accessed June 25, 2019. https://lib.dr.iastate.edu/etd/16301.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Liang. “Device physics of perovskite solar cells.” 2017. Web. 25 Jun 2019.

Vancouver:

Zhang L. Device physics of perovskite solar cells. [Internet] [Thesis]. Iowa State University; 2017. [cited 2019 Jun 25]. Available from: https://lib.dr.iastate.edu/etd/16301.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang L. Device physics of perovskite solar cells. [Thesis]. Iowa State University; 2017. Available from: https://lib.dr.iastate.edu/etd/16301

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

20. Gullapalli, Amulya. DEVELOPMENT OF INFRARED AND TERAHERTZ BOLOMETERS BASED ON PALLADIUM AND CARBON NANOTUBES USING ROLL TO ROLL PROCESS.

Degree: 2015, University of Massachusetts

  Terahertz region in the electromagnetic spectrum is the region between Infrared and Microwave. As the Terahertz region has both wave and particle nature, it… (more)

Subjects/Keywords: Electromagnetics and Photonics; Electronic Devices and Semiconductor Manufacturing; Nanoscience and Nanotechnology; Nanotechnology Fabrication

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APA (6th Edition):

Gullapalli, A. (2015). DEVELOPMENT OF INFRARED AND TERAHERTZ BOLOMETERS BASED ON PALLADIUM AND CARBON NANOTUBES USING ROLL TO ROLL PROCESS. (Thesis). University of Massachusetts. Retrieved from https://scholarworks.umass.edu/masters_theses_2/150

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gullapalli, Amulya. “DEVELOPMENT OF INFRARED AND TERAHERTZ BOLOMETERS BASED ON PALLADIUM AND CARBON NANOTUBES USING ROLL TO ROLL PROCESS.” 2015. Thesis, University of Massachusetts. Accessed June 25, 2019. https://scholarworks.umass.edu/masters_theses_2/150.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gullapalli, Amulya. “DEVELOPMENT OF INFRARED AND TERAHERTZ BOLOMETERS BASED ON PALLADIUM AND CARBON NANOTUBES USING ROLL TO ROLL PROCESS.” 2015. Web. 25 Jun 2019.

Vancouver:

Gullapalli A. DEVELOPMENT OF INFRARED AND TERAHERTZ BOLOMETERS BASED ON PALLADIUM AND CARBON NANOTUBES USING ROLL TO ROLL PROCESS. [Internet] [Thesis]. University of Massachusetts; 2015. [cited 2019 Jun 25]. Available from: https://scholarworks.umass.edu/masters_theses_2/150.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gullapalli A. DEVELOPMENT OF INFRARED AND TERAHERTZ BOLOMETERS BASED ON PALLADIUM AND CARBON NANOTUBES USING ROLL TO ROLL PROCESS. [Thesis]. University of Massachusetts; 2015. Available from: https://scholarworks.umass.edu/masters_theses_2/150

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Lal, Shalini. On Wafer-Bonded Junctions and Transistors - Design, Fabrication, Challenges and Discoveries.

Degree: 2015, University of California – eScholarship, University of California

 The use of epitaxial junctions, especially heterojunctions, like InGaAs/InAlAs, Al- GaN/GaN, has yielded transistors switching at high frequency or high voltage. It is however generally… (more)

Subjects/Keywords: Electrical engineering; Materials Science; Physics; Device fabrication; Device Physics; Semiconductor; Vertical Electron Transistor; Wafer Bonding

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APA (6th Edition):

Lal, S. (2015). On Wafer-Bonded Junctions and Transistors - Design, Fabrication, Challenges and Discoveries. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/5pt0w07x

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lal, Shalini. “On Wafer-Bonded Junctions and Transistors - Design, Fabrication, Challenges and Discoveries.” 2015. Thesis, University of California – eScholarship, University of California. Accessed June 25, 2019. http://www.escholarship.org/uc/item/5pt0w07x.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lal, Shalini. “On Wafer-Bonded Junctions and Transistors - Design, Fabrication, Challenges and Discoveries.” 2015. Web. 25 Jun 2019.

Vancouver:

Lal S. On Wafer-Bonded Junctions and Transistors - Design, Fabrication, Challenges and Discoveries. [Internet] [Thesis]. University of California – eScholarship, University of California; 2015. [cited 2019 Jun 25]. Available from: http://www.escholarship.org/uc/item/5pt0w07x.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lal S. On Wafer-Bonded Junctions and Transistors - Design, Fabrication, Challenges and Discoveries. [Thesis]. University of California – eScholarship, University of California; 2015. Available from: http://www.escholarship.org/uc/item/5pt0w07x

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

22. KWOK WAI KEUNG. Fabrication and characterization of semiconductor nanowires for thermoelectric application.

Degree: 2011, National University of Singapore

Subjects/Keywords: fabrication; characterization; semiconductor; nanowires; thermoelectric; VLS

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APA (6th Edition):

KEUNG, K. W. (2011). Fabrication and characterization of semiconductor nanowires for thermoelectric application. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/32495

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

KEUNG, KWOK WAI. “Fabrication and characterization of semiconductor nanowires for thermoelectric application.” 2011. Thesis, National University of Singapore. Accessed June 25, 2019. http://scholarbank.nus.edu.sg/handle/10635/32495.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

KEUNG, KWOK WAI. “Fabrication and characterization of semiconductor nanowires for thermoelectric application.” 2011. Web. 25 Jun 2019.

Vancouver:

KEUNG KW. Fabrication and characterization of semiconductor nanowires for thermoelectric application. [Internet] [Thesis]. National University of Singapore; 2011. [cited 2019 Jun 25]. Available from: http://scholarbank.nus.edu.sg/handle/10635/32495.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

KEUNG KW. Fabrication and characterization of semiconductor nanowires for thermoelectric application. [Thesis]. National University of Singapore; 2011. Available from: http://scholarbank.nus.edu.sg/handle/10635/32495

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arkansas

23. Fan, Dongsheng. III-V Bismide Optoelectronic Devices.

Degree: PhD, 2013, University of Arkansas

  This dissertation explores modeling, molecular beam epitaxy growth, and fabrication of III-V bismide optoelectronic devices, which are of great importance in modern applications of… (more)

Subjects/Keywords: Applied sciences; Bismuth; Gaasbi; Iii-v semiconductor; Molecular beam epitaxy; Quantam well; Surfactant; Electronic Devices and Semiconductor Manufacturing; Nanoscience and Nanotechnology; Nanotechnology Fabrication; Semiconductor and Optical Materials

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APA (6th Edition):

Fan, D. (2013). III-V Bismide Optoelectronic Devices. (Doctoral Dissertation). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/598

Chicago Manual of Style (16th Edition):

Fan, Dongsheng. “III-V Bismide Optoelectronic Devices.” 2013. Doctoral Dissertation, University of Arkansas. Accessed June 25, 2019. https://scholarworks.uark.edu/etd/598.

MLA Handbook (7th Edition):

Fan, Dongsheng. “III-V Bismide Optoelectronic Devices.” 2013. Web. 25 Jun 2019.

Vancouver:

Fan D. III-V Bismide Optoelectronic Devices. [Internet] [Doctoral dissertation]. University of Arkansas; 2013. [cited 2019 Jun 25]. Available from: https://scholarworks.uark.edu/etd/598.

Council of Science Editors:

Fan D. III-V Bismide Optoelectronic Devices. [Doctoral Dissertation]. University of Arkansas; 2013. Available from: https://scholarworks.uark.edu/etd/598


McMaster University

24. Boulanger, Jonathan P. Unveiling Transient Behaviors in Heterostructure Nanowires.

Degree: PhD, 2013, McMaster University

GaAs/GaP heterostructure nanowires (NWs) were grown on GaAs(111)B and Si(111) substrates by gold (Au) assisted vapor-liquid-solid (VLS) growth in a molecular beam epitaxy (MBE)… (more)

Subjects/Keywords: nanowire; epitaxy; electron microscopy; III-V semiconductors; vapor liquid solid; heterostructures; Electronic Devices and Semiconductor Manufacturing; Nanoscience and Nanotechnology; Nanotechnology fabrication; Semiconductor and Optical Materials; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Boulanger, J. P. (2013). Unveiling Transient Behaviors in Heterostructure Nanowires. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/13480

Chicago Manual of Style (16th Edition):

Boulanger, Jonathan P. “Unveiling Transient Behaviors in Heterostructure Nanowires.” 2013. Doctoral Dissertation, McMaster University. Accessed June 25, 2019. http://hdl.handle.net/11375/13480.

MLA Handbook (7th Edition):

Boulanger, Jonathan P. “Unveiling Transient Behaviors in Heterostructure Nanowires.” 2013. Web. 25 Jun 2019.

Vancouver:

Boulanger JP. Unveiling Transient Behaviors in Heterostructure Nanowires. [Internet] [Doctoral dissertation]. McMaster University; 2013. [cited 2019 Jun 25]. Available from: http://hdl.handle.net/11375/13480.

Council of Science Editors:

Boulanger JP. Unveiling Transient Behaviors in Heterostructure Nanowires. [Doctoral Dissertation]. McMaster University; 2013. Available from: http://hdl.handle.net/11375/13480


McMaster University

25. Devenyi, Gabriel A. An Investigation into the Role of Energy and Symmetry at Epitaxial Interfaces.

Degree: PhD, 2013, McMaster University

Epitaxy is a key technological process for the production of thin films and nanostructures for electronic and optoelectronic devices. The epitaxial process has been… (more)

Subjects/Keywords: epitaxy; thin films; symmetry; growth; MBE; interface; Electronic Devices and Semiconductor Manufacturing; Nanoscience and Nanotechnology; Nanotechnology fabrication; Semiconductor and Optical Materials; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Devenyi, G. A. (2013). An Investigation into the Role of Energy and Symmetry at Epitaxial Interfaces. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/13788

Chicago Manual of Style (16th Edition):

Devenyi, Gabriel A. “An Investigation into the Role of Energy and Symmetry at Epitaxial Interfaces.” 2013. Doctoral Dissertation, McMaster University. Accessed June 25, 2019. http://hdl.handle.net/11375/13788.

MLA Handbook (7th Edition):

Devenyi, Gabriel A. “An Investigation into the Role of Energy and Symmetry at Epitaxial Interfaces.” 2013. Web. 25 Jun 2019.

Vancouver:

Devenyi GA. An Investigation into the Role of Energy and Symmetry at Epitaxial Interfaces. [Internet] [Doctoral dissertation]. McMaster University; 2013. [cited 2019 Jun 25]. Available from: http://hdl.handle.net/11375/13788.

Council of Science Editors:

Devenyi GA. An Investigation into the Role of Energy and Symmetry at Epitaxial Interfaces. [Doctoral Dissertation]. McMaster University; 2013. Available from: http://hdl.handle.net/11375/13788


Virginia Commonwealth University

26. Hafiz, Shopan d. Optical investigations of InGaN heterostructures and GeSn nanocrystals for photonic and phononic applications: light emitting diodes and phonon cavities.

Degree: PhD, Engineering, 2016, Virginia Commonwealth University

  InGaN heterostructures are at the core of blue light emitting diodes (LEDs) which are the basic building blocks for energy efficient and environment friendly… (more)

Subjects/Keywords: InGaN; light emitting diode; acoustic cavity; GeSn; BeMgZnO; Electromagnetics and Photonics; Electronic Devices and Semiconductor Manufacturing; Nanotechnology Fabrication

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APA (6th Edition):

Hafiz, S. d. (2016). Optical investigations of InGaN heterostructures and GeSn nanocrystals for photonic and phononic applications: light emitting diodes and phonon cavities. (Doctoral Dissertation). Virginia Commonwealth University. Retrieved from https://scholarscompass.vcu.edu/etd/4199

Chicago Manual of Style (16th Edition):

Hafiz, Shopan d. “Optical investigations of InGaN heterostructures and GeSn nanocrystals for photonic and phononic applications: light emitting diodes and phonon cavities.” 2016. Doctoral Dissertation, Virginia Commonwealth University. Accessed June 25, 2019. https://scholarscompass.vcu.edu/etd/4199.

MLA Handbook (7th Edition):

Hafiz, Shopan d. “Optical investigations of InGaN heterostructures and GeSn nanocrystals for photonic and phononic applications: light emitting diodes and phonon cavities.” 2016. Web. 25 Jun 2019.

Vancouver:

Hafiz Sd. Optical investigations of InGaN heterostructures and GeSn nanocrystals for photonic and phononic applications: light emitting diodes and phonon cavities. [Internet] [Doctoral dissertation]. Virginia Commonwealth University; 2016. [cited 2019 Jun 25]. Available from: https://scholarscompass.vcu.edu/etd/4199.

Council of Science Editors:

Hafiz Sd. Optical investigations of InGaN heterostructures and GeSn nanocrystals for photonic and phononic applications: light emitting diodes and phonon cavities. [Doctoral Dissertation]. Virginia Commonwealth University; 2016. Available from: https://scholarscompass.vcu.edu/etd/4199


Virginia Commonwealth University

27. Fan, Qian. GaN heterojunction FET device Fabrication, Characterization and Modeling.

Degree: PhD, Electrical Engineering, 2009, Virginia Commonwealth University

 This dissertation is focused on the research efforts to develop the growth, processing, and modeling technologies for GaN-based Heterojunction Field Effect Transistors (HFETs). The interest… (more)

Subjects/Keywords: GaN; HFETs; Semiconductor Growth; Fabrication; Small Signal Modeling; Quantum Drift-Diffusion Modeling; Electrical and Computer Engineering; Engineering

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APA (6th Edition):

Fan, Q. (2009). GaN heterojunction FET device Fabrication, Characterization and Modeling. (Doctoral Dissertation). Virginia Commonwealth University. Retrieved from https://scholarscompass.vcu.edu/etd/35

Chicago Manual of Style (16th Edition):

Fan, Qian. “GaN heterojunction FET device Fabrication, Characterization and Modeling.” 2009. Doctoral Dissertation, Virginia Commonwealth University. Accessed June 25, 2019. https://scholarscompass.vcu.edu/etd/35.

MLA Handbook (7th Edition):

Fan, Qian. “GaN heterojunction FET device Fabrication, Characterization and Modeling.” 2009. Web. 25 Jun 2019.

Vancouver:

Fan Q. GaN heterojunction FET device Fabrication, Characterization and Modeling. [Internet] [Doctoral dissertation]. Virginia Commonwealth University; 2009. [cited 2019 Jun 25]. Available from: https://scholarscompass.vcu.edu/etd/35.

Council of Science Editors:

Fan Q. GaN heterojunction FET device Fabrication, Characterization and Modeling. [Doctoral Dissertation]. Virginia Commonwealth University; 2009. Available from: https://scholarscompass.vcu.edu/etd/35


University of Kentucky

28. Hu, Bing. FABRICATION AND STUDY OF MOLECULAR DEVICES AND PHOTOVOLTAIC DEVICES BY METAL/DIELECTRIC/METAL STRUCTURES.

Degree: 2011, University of Kentucky

 A new class of electrodes with nanometer-scale contact spacing can be produced at the edge of patterned metal/insulator/metal this film structures. A key challenge is… (more)

Subjects/Keywords: Molecular Devices; Tunnel Junctions; Photovoltaic Devices; Organic Semiconductor; Oxide Nanowires; Engineering; Materials Science and Engineering; Nanotechnology Fabrication

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APA (6th Edition):

Hu, B. (2011). FABRICATION AND STUDY OF MOLECULAR DEVICES AND PHOTOVOLTAIC DEVICES BY METAL/DIELECTRIC/METAL STRUCTURES. (Doctoral Dissertation). University of Kentucky. Retrieved from http://uknowledge.uky.edu/gradschool_diss/222

Chicago Manual of Style (16th Edition):

Hu, Bing. “FABRICATION AND STUDY OF MOLECULAR DEVICES AND PHOTOVOLTAIC DEVICES BY METAL/DIELECTRIC/METAL STRUCTURES.” 2011. Doctoral Dissertation, University of Kentucky. Accessed June 25, 2019. http://uknowledge.uky.edu/gradschool_diss/222.

MLA Handbook (7th Edition):

Hu, Bing. “FABRICATION AND STUDY OF MOLECULAR DEVICES AND PHOTOVOLTAIC DEVICES BY METAL/DIELECTRIC/METAL STRUCTURES.” 2011. Web. 25 Jun 2019.

Vancouver:

Hu B. FABRICATION AND STUDY OF MOLECULAR DEVICES AND PHOTOVOLTAIC DEVICES BY METAL/DIELECTRIC/METAL STRUCTURES. [Internet] [Doctoral dissertation]. University of Kentucky; 2011. [cited 2019 Jun 25]. Available from: http://uknowledge.uky.edu/gradschool_diss/222.

Council of Science Editors:

Hu B. FABRICATION AND STUDY OF MOLECULAR DEVICES AND PHOTOVOLTAIC DEVICES BY METAL/DIELECTRIC/METAL STRUCTURES. [Doctoral Dissertation]. University of Kentucky; 2011. Available from: http://uknowledge.uky.edu/gradschool_diss/222


Arizona State University

29. Mahmud, Adnan. Development of Novel Sensor Devices for Total Ionization Dose Detection.

Degree: Electrical Engineering, 2017, Arizona State University

Subjects/Keywords: Engineering; Chalcogenide; Dosimeter; Fabrication; Ionizing Radiation; MOS Capacitor; Semiconductor

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mahmud, A. (2017). Development of Novel Sensor Devices for Total Ionization Dose Detection. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/46192

Chicago Manual of Style (16th Edition):

Mahmud, Adnan. “Development of Novel Sensor Devices for Total Ionization Dose Detection.” 2017. Doctoral Dissertation, Arizona State University. Accessed June 25, 2019. http://repository.asu.edu/items/46192.

MLA Handbook (7th Edition):

Mahmud, Adnan. “Development of Novel Sensor Devices for Total Ionization Dose Detection.” 2017. Web. 25 Jun 2019.

Vancouver:

Mahmud A. Development of Novel Sensor Devices for Total Ionization Dose Detection. [Internet] [Doctoral dissertation]. Arizona State University; 2017. [cited 2019 Jun 25]. Available from: http://repository.asu.edu/items/46192.

Council of Science Editors:

Mahmud A. Development of Novel Sensor Devices for Total Ionization Dose Detection. [Doctoral Dissertation]. Arizona State University; 2017. Available from: http://repository.asu.edu/items/46192


University of Colorado

30. Coffey, Michael. Millimeter-Wave Gan Mmic Integration with Additive Manufacturing.

Degree: PhD, Electrical, Computer & Energy Engineering, 2017, University of Colorado

 This thesis addresses the analysis, design, integration and test of microwave and millimeter-wave monolithic microwave integrated circuits (MMIC or MMICs). Recent and ongoing progress in… (more)

Subjects/Keywords: microwave and millimeter-wave monolithic microwave integrated circuits (MMIC or MMICs); semiconductor device fabrication; Electrical and Computer Engineering; Electromagnetics and Photonics

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Coffey, M. (2017). Millimeter-Wave Gan Mmic Integration with Additive Manufacturing. (Doctoral Dissertation). University of Colorado. Retrieved from https://scholar.colorado.edu/ecen_gradetds/155

Chicago Manual of Style (16th Edition):

Coffey, Michael. “Millimeter-Wave Gan Mmic Integration with Additive Manufacturing.” 2017. Doctoral Dissertation, University of Colorado. Accessed June 25, 2019. https://scholar.colorado.edu/ecen_gradetds/155.

MLA Handbook (7th Edition):

Coffey, Michael. “Millimeter-Wave Gan Mmic Integration with Additive Manufacturing.” 2017. Web. 25 Jun 2019.

Vancouver:

Coffey M. Millimeter-Wave Gan Mmic Integration with Additive Manufacturing. [Internet] [Doctoral dissertation]. University of Colorado; 2017. [cited 2019 Jun 25]. Available from: https://scholar.colorado.edu/ecen_gradetds/155.

Council of Science Editors:

Coffey M. Millimeter-Wave Gan Mmic Integration with Additive Manufacturing. [Doctoral Dissertation]. University of Colorado; 2017. Available from: https://scholar.colorado.edu/ecen_gradetds/155

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