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You searched for subject:(Selective area growth SAG ). Showing records 1 – 30 of 28976 total matches.

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University of Illinois – Urbana-Champaign

1. Pang, Liang. Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy.

Degree: MS, 1200, 2010, University of Illinois – Urbana-Champaign

 This thesis work presents a comprehensive study of the application of the PAMBE-SAG technique to fabrication of high-power GaN-based switching HEMTs. First, a detailed study… (more)

Subjects/Keywords: AlGaN/GaN; High Electron Mobility Transistor (HEMT); Selective area growth (SAG); Plasma-assisted molecular beam epitaxy (PAMBE); power switch; current density; on-state resistance; breakdown voltage; Gallium Nitride (GaN)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pang, L. (2010). Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/16009

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pang, Liang. “Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy.” 2010. Thesis, University of Illinois – Urbana-Champaign. Accessed August 23, 2019. http://hdl.handle.net/2142/16009.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pang, Liang. “Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy.” 2010. Web. 23 Aug 2019.

Vancouver:

Pang L. Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/2142/16009.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pang L. Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy. [Thesis]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/16009

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Southern California

2. Chu, Hyung-Joon. The growth and characterization of III-V semiconductor nanowire arrays by nanoscale selective area metalorganic chemical vapor deposition.

Degree: PhD, Electrical Engineering, 2010, University of Southern California

 The interesting properties and potential applications of semiconductor nanowires have received significant attention. Nanoscale selective area growth using MOCVD (NS-SAG) has been demonstrated as an… (more)

Subjects/Keywords: nanowire; nanoscale selective area growth; MOCVD

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APA (6th Edition):

Chu, H. (2010). The growth and characterization of III-V semiconductor nanowire arrays by nanoscale selective area metalorganic chemical vapor deposition. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/362863/rec/6754

Chicago Manual of Style (16th Edition):

Chu, Hyung-Joon. “The growth and characterization of III-V semiconductor nanowire arrays by nanoscale selective area metalorganic chemical vapor deposition.” 2010. Doctoral Dissertation, University of Southern California. Accessed August 23, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/362863/rec/6754.

MLA Handbook (7th Edition):

Chu, Hyung-Joon. “The growth and characterization of III-V semiconductor nanowire arrays by nanoscale selective area metalorganic chemical vapor deposition.” 2010. Web. 23 Aug 2019.

Vancouver:

Chu H. The growth and characterization of III-V semiconductor nanowire arrays by nanoscale selective area metalorganic chemical vapor deposition. [Internet] [Doctoral dissertation]. University of Southern California; 2010. [cited 2019 Aug 23]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/362863/rec/6754.

Council of Science Editors:

Chu H. The growth and characterization of III-V semiconductor nanowire arrays by nanoscale selective area metalorganic chemical vapor deposition. [Doctoral Dissertation]. University of Southern California; 2010. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/362863/rec/6754

3. Liudvih, Pavel. Quantum well devices fabricated using selective area growth and their application in optical fiber communication.

Degree: MS, 1200, 2014, University of Illinois – Urbana-Champaign

 In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators. SAG can be successfully… (more)

Subjects/Keywords: Selective area epitaxy (SAE); Selective area growth (SAG); integrated modulator; Metalorganic chemical vapor deposition (MOCVD); quantum well.

…x5B;31], and selective area growth (SAG) [26], [32]… …SELECTIVE AREA GROWTH (SAG) SAG, sometimes also called selective area epitaxy, is an… …2-8. Conditions for selective area growth in MOCVD vs. MOMBE. Lines are separating regions… …the details of SAG including the growth materials, equipment, and conditions. 11 2… …process. Several SAG growth methods have been developed, but the two most commonly used are… 

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APA (6th Edition):

Liudvih, P. (2014). Quantum well devices fabricated using selective area growth and their application in optical fiber communication. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/46625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liudvih, Pavel. “Quantum well devices fabricated using selective area growth and their application in optical fiber communication.” 2014. Thesis, University of Illinois – Urbana-Champaign. Accessed August 23, 2019. http://hdl.handle.net/2142/46625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liudvih, Pavel. “Quantum well devices fabricated using selective area growth and their application in optical fiber communication.” 2014. Web. 23 Aug 2019.

Vancouver:

Liudvih P. Quantum well devices fabricated using selective area growth and their application in optical fiber communication. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2014. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/2142/46625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liudvih P. Quantum well devices fabricated using selective area growth and their application in optical fiber communication. [Thesis]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/46625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. El Khoury Maroun, Michel. Croissance de GaN semipolaire par épitaxie en phase vapeur aux organométalliques sur substrats de Si structurés : Metal organic vapor phase epitaxy of semipolar GaN on patterned silicon substrates.

Degree: Docteur es, Physique, 2016, Nice

Jusqu'à présent, les dispositifs optoélectroniques commerciaux sont épitaxiés selon la direction c, qui souffre de deux limitations intrinsèques. D'une part, les fortes discontinuités de polarisation… (more)

Subjects/Keywords: GaN; Silicium; Semipolaire; Croissance sélective; GaN; Silicon; Semipolar; Selective area growth

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APA (6th Edition):

El Khoury Maroun, M. (2016). Croissance de GaN semipolaire par épitaxie en phase vapeur aux organométalliques sur substrats de Si structurés : Metal organic vapor phase epitaxy of semipolar GaN on patterned silicon substrates. (Doctoral Dissertation). Nice. Retrieved from http://www.theses.fr/2016NICE4001

Chicago Manual of Style (16th Edition):

El Khoury Maroun, Michel. “Croissance de GaN semipolaire par épitaxie en phase vapeur aux organométalliques sur substrats de Si structurés : Metal organic vapor phase epitaxy of semipolar GaN on patterned silicon substrates.” 2016. Doctoral Dissertation, Nice. Accessed August 23, 2019. http://www.theses.fr/2016NICE4001.

MLA Handbook (7th Edition):

El Khoury Maroun, Michel. “Croissance de GaN semipolaire par épitaxie en phase vapeur aux organométalliques sur substrats de Si structurés : Metal organic vapor phase epitaxy of semipolar GaN on patterned silicon substrates.” 2016. Web. 23 Aug 2019.

Vancouver:

El Khoury Maroun M. Croissance de GaN semipolaire par épitaxie en phase vapeur aux organométalliques sur substrats de Si structurés : Metal organic vapor phase epitaxy of semipolar GaN on patterned silicon substrates. [Internet] [Doctoral dissertation]. Nice; 2016. [cited 2019 Aug 23]. Available from: http://www.theses.fr/2016NICE4001.

Council of Science Editors:

El Khoury Maroun M. Croissance de GaN semipolaire par épitaxie en phase vapeur aux organométalliques sur substrats de Si structurés : Metal organic vapor phase epitaxy of semipolar GaN on patterned silicon substrates. [Doctoral Dissertation]. Nice; 2016. Available from: http://www.theses.fr/2016NICE4001

5. Avit, Geoffrey. Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) : Ga(In)N and GaAs micro- and nanowires grown by Hydride Vapor Phase Epitaxy (HVPE).

Degree: Docteur es, Matériaux et Composants pour l'Electronique, 2014, Université Blaise-Pascale, Clermont-Ferrand II

Le manuscrit traite de l'épitaxie en phase vapeur par la méthode aux hydrures (HVPE) de micro- et nanofils Ga(In)N et GaAs. La HVPE est une… (more)

Subjects/Keywords: HVPE; Nanofils; GaN; InGaN; GaAs; Croissance sélective; Croissance VLS; HVPE; Nanowires; GaN; InGaN; GaAs; Selective area growth; VLS growth

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APA (6th Edition):

Avit, G. (2014). Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) : Ga(In)N and GaAs micro- and nanowires grown by Hydride Vapor Phase Epitaxy (HVPE). (Doctoral Dissertation). Université Blaise-Pascale, Clermont-Ferrand II. Retrieved from http://www.theses.fr/2014CLF22530

Chicago Manual of Style (16th Edition):

Avit, Geoffrey. “Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) : Ga(In)N and GaAs micro- and nanowires grown by Hydride Vapor Phase Epitaxy (HVPE).” 2014. Doctoral Dissertation, Université Blaise-Pascale, Clermont-Ferrand II. Accessed August 23, 2019. http://www.theses.fr/2014CLF22530.

MLA Handbook (7th Edition):

Avit, Geoffrey. “Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) : Ga(In)N and GaAs micro- and nanowires grown by Hydride Vapor Phase Epitaxy (HVPE).” 2014. Web. 23 Aug 2019.

Vancouver:

Avit G. Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) : Ga(In)N and GaAs micro- and nanowires grown by Hydride Vapor Phase Epitaxy (HVPE). [Internet] [Doctoral dissertation]. Université Blaise-Pascale, Clermont-Ferrand II; 2014. [cited 2019 Aug 23]. Available from: http://www.theses.fr/2014CLF22530.

Council of Science Editors:

Avit G. Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) : Ga(In)N and GaAs micro- and nanowires grown by Hydride Vapor Phase Epitaxy (HVPE). [Doctoral Dissertation]. Université Blaise-Pascale, Clermont-Ferrand II; 2014. Available from: http://www.theses.fr/2014CLF22530


Georgia Tech

6. Puybaret, Renaud. Epitaxial graphene and nitrides: New processes for improved electronics and optoelectronics.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 Silicon carbide and III-nitrides have been intensively used in the industry for the production of high-frequency electronics, power electronics, and optoelectronics, both separately and grown… (more)

Subjects/Keywords: Epitaxial graphene; Silicon carbide; Indium gallium nitride; Nano selective area growth; Silicon nitride; Electronics; Optoelectronics; Nanotechnology

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APA (6th Edition):

Puybaret, R. (2015). Epitaxial graphene and nitrides: New processes for improved electronics and optoelectronics. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55541

Chicago Manual of Style (16th Edition):

Puybaret, Renaud. “Epitaxial graphene and nitrides: New processes for improved electronics and optoelectronics.” 2015. Doctoral Dissertation, Georgia Tech. Accessed August 23, 2019. http://hdl.handle.net/1853/55541.

MLA Handbook (7th Edition):

Puybaret, Renaud. “Epitaxial graphene and nitrides: New processes for improved electronics and optoelectronics.” 2015. Web. 23 Aug 2019.

Vancouver:

Puybaret R. Epitaxial graphene and nitrides: New processes for improved electronics and optoelectronics. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/1853/55541.

Council of Science Editors:

Puybaret R. Epitaxial graphene and nitrides: New processes for improved electronics and optoelectronics. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/55541

7. Secco, Eleonora. Characterisation of single semiconductor nanowires by non-destructive spectroscopies.

Degree: 2018, TDX

 Los nanohilos semiconductores (NWs, de su nombre inglés, nanowires) tienen una amplia gama de aplicaciones en el campo de la optoelectrónica (emisores de luz y… (more)

Subjects/Keywords: nanowires; semiconductor; photoluminescence; raman scattering; x-ray spectroscopy; selective area growth; core-shell nanowires; SERS; gold nanorods; UNESCO::FÍSICA

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APA (6th Edition):

Secco, E. (2018). Characterisation of single semiconductor nanowires by non-destructive spectroscopies. (Thesis). TDX. Retrieved from http://hdl.handle.net/10803/570047

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Secco, Eleonora. “Characterisation of single semiconductor nanowires by non-destructive spectroscopies.” 2018. Thesis, TDX. Accessed August 23, 2019. http://hdl.handle.net/10803/570047.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Secco, Eleonora. “Characterisation of single semiconductor nanowires by non-destructive spectroscopies.” 2018. Web. 23 Aug 2019.

Vancouver:

Secco E. Characterisation of single semiconductor nanowires by non-destructive spectroscopies. [Internet] [Thesis]. TDX; 2018. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/10803/570047.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Secco E. Characterisation of single semiconductor nanowires by non-destructive spectroscopies. [Thesis]. TDX; 2018. Available from: http://hdl.handle.net/10803/570047

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

8. Laval, Gautier. Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2017, Grenoble Alpes

Les diodes électroluminescentes (LEDs) utilisées dans les systèmes d'éclairage solide sont réalisées à base de GaN et de ses alliages. Bien que les LEDs commerciales… (more)

Subjects/Keywords: GaN; Silicium; Epvom; Croissance sélective; Optoélectronique; Micro-LEDs; GaN; Silicon; Movpe; Selective area growth; Optoelectronic; Micro-LEDs; 620

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APA (6th Edition):

Laval, G. (2017). Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2017GREAT018

Chicago Manual of Style (16th Edition):

Laval, Gautier. “Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications.” 2017. Doctoral Dissertation, Grenoble Alpes. Accessed August 23, 2019. http://www.theses.fr/2017GREAT018.

MLA Handbook (7th Edition):

Laval, Gautier. “Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications.” 2017. Web. 23 Aug 2019.

Vancouver:

Laval G. Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2017. [cited 2019 Aug 23]. Available from: http://www.theses.fr/2017GREAT018.

Council of Science Editors:

Laval G. Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications. [Doctoral Dissertation]. Grenoble Alpes; 2017. Available from: http://www.theses.fr/2017GREAT018

9. Messanvi, Agnès. Composants photoniques à base de fils de nitrures d'élément III : du fil unique aux assemblées : Nitride nanowire photonic devices : from single wires to ordered arrays.

Degree: Docteur es, Nanophysique, 2015, Grenoble Alpes

Cette thèse porte sur la réalisation de composants photoniques à base de fils de nitrures III-V. Les fils de GaN non-catalysés ont été élaborés de… (more)

Subjects/Keywords: Nanofils; Nitrures; Photonique; Photovoltaïque; Diode électroluminescente; Croissance sélective; Nanowire; Nitride; Photonic; Photovoltaics; Light emitting diode; Selective area growth; 530; 600

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APA (6th Edition):

Messanvi, A. (2015). Composants photoniques à base de fils de nitrures d'élément III : du fil unique aux assemblées : Nitride nanowire photonic devices : from single wires to ordered arrays. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAY062

Chicago Manual of Style (16th Edition):

Messanvi, Agnès. “Composants photoniques à base de fils de nitrures d'élément III : du fil unique aux assemblées : Nitride nanowire photonic devices : from single wires to ordered arrays.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed August 23, 2019. http://www.theses.fr/2015GREAY062.

MLA Handbook (7th Edition):

Messanvi, Agnès. “Composants photoniques à base de fils de nitrures d'élément III : du fil unique aux assemblées : Nitride nanowire photonic devices : from single wires to ordered arrays.” 2015. Web. 23 Aug 2019.

Vancouver:

Messanvi A. Composants photoniques à base de fils de nitrures d'élément III : du fil unique aux assemblées : Nitride nanowire photonic devices : from single wires to ordered arrays. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2019 Aug 23]. Available from: http://www.theses.fr/2015GREAY062.

Council of Science Editors:

Messanvi A. Composants photoniques à base de fils de nitrures d'élément III : du fil unique aux assemblées : Nitride nanowire photonic devices : from single wires to ordered arrays. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAY062


University of Southern California

10. Yuan, Zaoshi. Molecular dynamics simulations of nanostructures.

Degree: PhD, Materials Science, 2013, University of Southern California

 This dissertation is focused on multimillion-atom molecular dynamics (MD) simulations of nanoscale materials. In the past decade, nanoscale materials have made significant commercial impacts, which… (more)

Subjects/Keywords: molecular dynamics; nanowire; nanostructures; percolation; twin; GaAs; ZnO; phase transition; embrittlement; brittle-to-ductile transition; selective area growth

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APA (6th Edition):

Yuan, Z. (2013). Molecular dynamics simulations of nanostructures. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/219293/rec/4182

Chicago Manual of Style (16th Edition):

Yuan, Zaoshi. “Molecular dynamics simulations of nanostructures.” 2013. Doctoral Dissertation, University of Southern California. Accessed August 23, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/219293/rec/4182.

MLA Handbook (7th Edition):

Yuan, Zaoshi. “Molecular dynamics simulations of nanostructures.” 2013. Web. 23 Aug 2019.

Vancouver:

Yuan Z. Molecular dynamics simulations of nanostructures. [Internet] [Doctoral dissertation]. University of Southern California; 2013. [cited 2019 Aug 23]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/219293/rec/4182.

Council of Science Editors:

Yuan Z. Molecular dynamics simulations of nanostructures. [Doctoral Dissertation]. University of Southern California; 2013. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/219293/rec/4182


Universitat de Valencia

11. Secco, Eleonora. Characterisation of single semiconductor nanowires by non-destructive spectroscopies .

Degree: 2015, Universitat de Valencia

 Los nanohilos semiconductores (NWs, de su nombre inglés, nanowires) tienen una amplia gama de aplicaciones en el campo de la optoelectrónica (emisores de luz y… (more)

Subjects/Keywords: nanowires; semiconductor; photoluminescence; raman scattering; x-ray spectroscopy; selective area growth; core-shell nanowires; SERS; gold nanorods

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Secco, E. (2015). Characterisation of single semiconductor nanowires by non-destructive spectroscopies . (Doctoral Dissertation). Universitat de Valencia. Retrieved from http://hdl.handle.net/10550/45765

Chicago Manual of Style (16th Edition):

Secco, Eleonora. “Characterisation of single semiconductor nanowires by non-destructive spectroscopies .” 2015. Doctoral Dissertation, Universitat de Valencia. Accessed August 23, 2019. http://hdl.handle.net/10550/45765.

MLA Handbook (7th Edition):

Secco, Eleonora. “Characterisation of single semiconductor nanowires by non-destructive spectroscopies .” 2015. Web. 23 Aug 2019.

Vancouver:

Secco E. Characterisation of single semiconductor nanowires by non-destructive spectroscopies . [Internet] [Doctoral dissertation]. Universitat de Valencia; 2015. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/10550/45765.

Council of Science Editors:

Secco E. Characterisation of single semiconductor nanowires by non-destructive spectroscopies . [Doctoral Dissertation]. Universitat de Valencia; 2015. Available from: http://hdl.handle.net/10550/45765


Linköping University

12. Chen, Hsin-Yu. Selective Area Growth of AlGaN pyramid with GaN Multiple Quantum Wells.

Degree: Semiconductor Materials, 2018, Linköping University

    Since Shuji Nakamura, Hiroshi Amano, and Isamu Akasaki won the 2014 Nobel prize in Physics owing to theircontributions on the invention of efficient… (more)

Subjects/Keywords: selective area growth; MOCVD; AlGaN pyramid; GaN multiple quantum wells; undesired deposition; Other Materials Engineering; Annan materialteknik

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APA (6th Edition):

Chen, H. (2018). Selective Area Growth of AlGaN pyramid with GaN Multiple Quantum Wells. (Thesis). Linköping University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-149811

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Hsin-Yu. “Selective Area Growth of AlGaN pyramid with GaN Multiple Quantum Wells.” 2018. Thesis, Linköping University. Accessed August 23, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-149811.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Hsin-Yu. “Selective Area Growth of AlGaN pyramid with GaN Multiple Quantum Wells.” 2018. Web. 23 Aug 2019.

Vancouver:

Chen H. Selective Area Growth of AlGaN pyramid with GaN Multiple Quantum Wells. [Internet] [Thesis]. Linköping University; 2018. [cited 2019 Aug 23]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-149811.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen H. Selective Area Growth of AlGaN pyramid with GaN Multiple Quantum Wells. [Thesis]. Linköping University; 2018. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-149811

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

13. Pang, Liang. Development of high-performance GaN-based power transistors.

Degree: PhD, 1200, 2013, University of Illinois – Urbana-Champaign

 This thesis presents a comprehensive study on the development of GaN-based high-power transistors. First, selective area growth by plasma-assisted molecular beam epitaxy, a technology developed… (more)

Subjects/Keywords: AlGaN/GaN high electron mobility transistor (HEMT); Ohmic contact; selective area growth by plasma-assisted molecular beam epitaxy (PAMBE-SAG); sputtered-gate-SiO2; Enhancement-mode metal-oxide-semiconductor high electron mobility transistor (MOSHEMT); flexible electronics

…3, selective area growth by plasma-assisted molecular beam epitaxy (PAMBE-SAG)… …SAG. The major challenge of PAMBE-SAG is the lack of growth selectivity. Unlike MOCVD or… …dislocations and line defects is developed during crystal growth and propagate to the epilayer… …experimental methods for film growth, device fabrication and characterization are briefed. In Chapter… …growth of III-nitride semiconductor films. As shown in Fig. 2.1,2 the system consists of a… 

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APA (6th Edition):

Pang, L. (2013). Development of high-performance GaN-based power transistors. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/44312

Chicago Manual of Style (16th Edition):

Pang, Liang. “Development of high-performance GaN-based power transistors.” 2013. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed August 23, 2019. http://hdl.handle.net/2142/44312.

MLA Handbook (7th Edition):

Pang, Liang. “Development of high-performance GaN-based power transistors.” 2013. Web. 23 Aug 2019.

Vancouver:

Pang L. Development of high-performance GaN-based power transistors. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2013. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/2142/44312.

Council of Science Editors:

Pang L. Development of high-performance GaN-based power transistors. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2013. Available from: http://hdl.handle.net/2142/44312


University of Texas – Austin

14. -5552-4766. van der Waals epitaxy and electronic transport in topological insulators.

Degree: Electrical and Computer Engineering, 2018, University of Texas – Austin

 Topological insulators (TI) have been demonstrated as a unique electronic phase of matter, possessing topological surface states (TSS) with promising applications in spin-based logic and… (more)

Subjects/Keywords: Topological insulators; Device transport; Magnetotransport; Surface states; van der Waals epitaxy; Selective area growth; Custom feature growth; 2D materials; Layered chalcogenides; Bismuth telluride sulfide

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APA (6th Edition):

-5552-4766. (2018). van der Waals epitaxy and electronic transport in topological insulators. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/63071

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

-5552-4766. “van der Waals epitaxy and electronic transport in topological insulators.” 2018. Thesis, University of Texas – Austin. Accessed August 23, 2019. http://hdl.handle.net/2152/63071.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

-5552-4766. “van der Waals epitaxy and electronic transport in topological insulators.” 2018. Web. 23 Aug 2019.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-5552-4766. van der Waals epitaxy and electronic transport in topological insulators. [Internet] [Thesis]. University of Texas – Austin; 2018. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/2152/63071.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

-5552-4766. van der Waals epitaxy and electronic transport in topological insulators. [Thesis]. University of Texas – Austin; 2018. Available from: http://hdl.handle.net/2152/63071

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

15. Seldrum, Thomas. Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2.

Degree: 2009, DIAL (Belgium)

This Ph. D. thesis is dedicated to the study of selective growth by molecular beam epitaxy of CdTe on CdTe(211)B and Si(100) islands patterned on… (more)

Subjects/Keywords: CdTe; MBE; Selective growth

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APA (6th Edition):

Seldrum, T. (2009). Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2. (Thesis). DIAL (Belgium). Retrieved from http://hdl.handle.net/2078.2/24879

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Seldrum, Thomas. “Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2.” 2009. Thesis, DIAL (Belgium). Accessed August 23, 2019. http://hdl.handle.net/2078.2/24879.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Seldrum, Thomas. “Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2.” 2009. Web. 23 Aug 2019.

Vancouver:

Seldrum T. Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2. [Internet] [Thesis]. DIAL (Belgium); 2009. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/2078.2/24879.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Seldrum T. Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2. [Thesis]. DIAL (Belgium); 2009. Available from: http://hdl.handle.net/2078.2/24879

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

16. Binet, Guillaume. Conception de transmetteurs 1,3 µm par épitaxie sélective en phase vapeur aux organo-métalliques : Design of 1.3 µm transmitters by metalorganic vapor phase selective area growth.

Degree: Docteur es, Optoélectronique, 2016, Université Pierre et Marie Curie – Paris VI

Le développement des réseaux optiques et l’augmentation des interconnexions à courtes distances, amènent un besoin croissant en transmetteurs émettant à 1,3 µm, performants, peu énergivores… (more)

Subjects/Keywords: 1,3 micron; Épitaxie sélective; MOVPE; Circuit intégré photonique; ALGAINAS; Modélisation de croissance d'interface; 1,3 micron; Selective area growth; Photonic integrated circuit; 535.2

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APA (6th Edition):

Binet, G. (2016). Conception de transmetteurs 1,3 µm par épitaxie sélective en phase vapeur aux organo-métalliques : Design of 1.3 µm transmitters by metalorganic vapor phase selective area growth. (Doctoral Dissertation). Université Pierre et Marie Curie – Paris VI. Retrieved from http://www.theses.fr/2016PA066524

Chicago Manual of Style (16th Edition):

Binet, Guillaume. “Conception de transmetteurs 1,3 µm par épitaxie sélective en phase vapeur aux organo-métalliques : Design of 1.3 µm transmitters by metalorganic vapor phase selective area growth.” 2016. Doctoral Dissertation, Université Pierre et Marie Curie – Paris VI. Accessed August 23, 2019. http://www.theses.fr/2016PA066524.

MLA Handbook (7th Edition):

Binet, Guillaume. “Conception de transmetteurs 1,3 µm par épitaxie sélective en phase vapeur aux organo-métalliques : Design of 1.3 µm transmitters by metalorganic vapor phase selective area growth.” 2016. Web. 23 Aug 2019.

Vancouver:

Binet G. Conception de transmetteurs 1,3 µm par épitaxie sélective en phase vapeur aux organo-métalliques : Design of 1.3 µm transmitters by metalorganic vapor phase selective area growth. [Internet] [Doctoral dissertation]. Université Pierre et Marie Curie – Paris VI; 2016. [cited 2019 Aug 23]. Available from: http://www.theses.fr/2016PA066524.

Council of Science Editors:

Binet G. Conception de transmetteurs 1,3 µm par épitaxie sélective en phase vapeur aux organo-métalliques : Design of 1.3 µm transmitters by metalorganic vapor phase selective area growth. [Doctoral Dissertation]. Université Pierre et Marie Curie – Paris VI; 2016. Available from: http://www.theses.fr/2016PA066524

17. Cossuet, Thomas. Problématique de la polarité dans les nanofils de ZnO localisés, et hétérostructures reliées pour l’opto-électronique : The issue of polarity in well-ordered ZnO nanowires, and their related heterostructures for optoelectronic applications.

Degree: Docteur es, Matériaux, Mécanique, Génie civil, Electrochimie, 2018, Grenoble Alpes

Le développement d’architectures nanostructurées originales composées de matériaux abondants et non-toxiques fait l’objet d’un fort intérêt de la communauté scientifique pour la fabrication de dispositifs… (more)

Subjects/Keywords: Croissance localisée; Polarité; Photo-Détecteur UV autoalimenté; Hétérostructures coeurs-Coquilles; Dépôt en bain chimique; Selective area growth; Polarity; Core-Shell heterostructures; Chemical bath deposition; Self-Powered UV photodetector; 540

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APA (6th Edition):

Cossuet, T. (2018). Problématique de la polarité dans les nanofils de ZnO localisés, et hétérostructures reliées pour l’opto-électronique : The issue of polarity in well-ordered ZnO nanowires, and their related heterostructures for optoelectronic applications. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAI086

Chicago Manual of Style (16th Edition):

Cossuet, Thomas. “Problématique de la polarité dans les nanofils de ZnO localisés, et hétérostructures reliées pour l’opto-électronique : The issue of polarity in well-ordered ZnO nanowires, and their related heterostructures for optoelectronic applications.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed August 23, 2019. http://www.theses.fr/2018GREAI086.

MLA Handbook (7th Edition):

Cossuet, Thomas. “Problématique de la polarité dans les nanofils de ZnO localisés, et hétérostructures reliées pour l’opto-électronique : The issue of polarity in well-ordered ZnO nanowires, and their related heterostructures for optoelectronic applications.” 2018. Web. 23 Aug 2019.

Vancouver:

Cossuet T. Problématique de la polarité dans les nanofils de ZnO localisés, et hétérostructures reliées pour l’opto-électronique : The issue of polarity in well-ordered ZnO nanowires, and their related heterostructures for optoelectronic applications. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2019 Aug 23]. Available from: http://www.theses.fr/2018GREAI086.

Council of Science Editors:

Cossuet T. Problématique de la polarité dans les nanofils de ZnO localisés, et hétérostructures reliées pour l’opto-électronique : The issue of polarity in well-ordered ZnO nanowires, and their related heterostructures for optoelectronic applications. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAI086


Brno University of Technology

18. Stanislav, Silvestr. Příprava InAs nanodrátů metodou MBE .

Degree: 2019, Brno University of Technology

 Tato bakalářská práce se zabývá přípravou InAs nanodrátů na křemíkovém substrátu metodou molekulární svazkové epitaxe. Důraz je kladen na výrobu nanodrátů mechanismem Vapour-Liquid-Solid za použití… (more)

Subjects/Keywords: nanodráty; Vapour-Liquid-Solid růst; selektivní epitaxe; InAs; katalytické nanočástice; molekulární svazková epitaxe; nanowires; Vapour-Liquid-Solid growth; Selective Area Epitaxy; InAs; catalytic nanoparticles; molecular beam epitaxy

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APA (6th Edition):

Stanislav, S. (2019). Příprava InAs nanodrátů metodou MBE . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/179358

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Stanislav, Silvestr. “Příprava InAs nanodrátů metodou MBE .” 2019. Thesis, Brno University of Technology. Accessed August 23, 2019. http://hdl.handle.net/11012/179358.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Stanislav, Silvestr. “Příprava InAs nanodrátů metodou MBE .” 2019. Web. 23 Aug 2019.

Vancouver:

Stanislav S. Příprava InAs nanodrátů metodou MBE . [Internet] [Thesis]. Brno University of Technology; 2019. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/11012/179358.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Stanislav S. Příprava InAs nanodrátů metodou MBE . [Thesis]. Brno University of Technology; 2019. Available from: http://hdl.handle.net/11012/179358

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Texas – Austin

19. Zhang, Zizhuo. Area-selective deposition of ferromagnetic cobalt films.

Degree: Chemical Engineering, 2018, University of Texas – Austin

 Cobalt is a classic ferromagnetic material and finds applications in magnetic random access memory devices. As an emerging patterning technique, area-selective atomic layer deposition (AS-ALD)… (more)

Subjects/Keywords: Area-selective deposition; Ferromagnetic material; Cobalt

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APA (6th Edition):

Zhang, Z. (2018). Area-selective deposition of ferromagnetic cobalt films. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/68479

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Zizhuo. “Area-selective deposition of ferromagnetic cobalt films.” 2018. Thesis, University of Texas – Austin. Accessed August 23, 2019. http://hdl.handle.net/2152/68479.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Zizhuo. “Area-selective deposition of ferromagnetic cobalt films.” 2018. Web. 23 Aug 2019.

Vancouver:

Zhang Z. Area-selective deposition of ferromagnetic cobalt films. [Internet] [Thesis]. University of Texas – Austin; 2018. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/2152/68479.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang Z. Area-selective deposition of ferromagnetic cobalt films. [Thesis]. University of Texas – Austin; 2018. Available from: http://hdl.handle.net/2152/68479

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Texas A&M University

20. Kantarci, Husniye. Reverse and Forward Genetics Approaches Reveal the Gene Networks That Regulate Development of Inner Ear Neurons.

Degree: PhD, Biology, 2017, Texas A&M University

 Stato-Acoustic Ganglion (SAG) neurons originate from the floor of the otic vesicle during a brief developmental window. They subsequently leave the otic vesicle and undergo… (more)

Subjects/Keywords: SAG; Neuron

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APA (6th Edition):

Kantarci, H. (2017). Reverse and Forward Genetics Approaches Reveal the Gene Networks That Regulate Development of Inner Ear Neurons. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/165917

Chicago Manual of Style (16th Edition):

Kantarci, Husniye. “Reverse and Forward Genetics Approaches Reveal the Gene Networks That Regulate Development of Inner Ear Neurons.” 2017. Doctoral Dissertation, Texas A&M University. Accessed August 23, 2019. http://hdl.handle.net/1969.1/165917.

MLA Handbook (7th Edition):

Kantarci, Husniye. “Reverse and Forward Genetics Approaches Reveal the Gene Networks That Regulate Development of Inner Ear Neurons.” 2017. Web. 23 Aug 2019.

Vancouver:

Kantarci H. Reverse and Forward Genetics Approaches Reveal the Gene Networks That Regulate Development of Inner Ear Neurons. [Internet] [Doctoral dissertation]. Texas A&M University; 2017. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/1969.1/165917.

Council of Science Editors:

Kantarci H. Reverse and Forward Genetics Approaches Reveal the Gene Networks That Regulate Development of Inner Ear Neurons. [Doctoral Dissertation]. Texas A&M University; 2017. Available from: http://hdl.handle.net/1969.1/165917

21. Coulon, Pierre-Marie. Croissance et caractérisation de nanofils/microfils de GaN : Growth and characterization of GaN nanowires/microwires.

Degree: Docteur es, Physique, 2014, Nice

Ce travail de thèse ce focalise sur la croissance et la caractérisation de Nanofils (NFs) et de Microfils (µFs) de GaN. L'élaboration de telles structures… (more)

Subjects/Keywords: GaN; Nanofils; Épitaxie en phase vapeur d'organométalliques; Auto-organisée; Localisée; Caractérisation; Polarité; Dopage Si; Résonances optiques; Défauts structuraux; GaN; Nanowires; Metal organic vapor phase epitaxy; Self-organised; Selective area growth; Characterization; Polarity; Si doping; Optical resonances; Structural defects

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APA (6th Edition):

Coulon, P. (2014). Croissance et caractérisation de nanofils/microfils de GaN : Growth and characterization of GaN nanowires/microwires. (Doctoral Dissertation). Nice. Retrieved from http://www.theses.fr/2014NICE4020

Chicago Manual of Style (16th Edition):

Coulon, Pierre-Marie. “Croissance et caractérisation de nanofils/microfils de GaN : Growth and characterization of GaN nanowires/microwires.” 2014. Doctoral Dissertation, Nice. Accessed August 23, 2019. http://www.theses.fr/2014NICE4020.

MLA Handbook (7th Edition):

Coulon, Pierre-Marie. “Croissance et caractérisation de nanofils/microfils de GaN : Growth and characterization of GaN nanowires/microwires.” 2014. Web. 23 Aug 2019.

Vancouver:

Coulon P. Croissance et caractérisation de nanofils/microfils de GaN : Growth and characterization of GaN nanowires/microwires. [Internet] [Doctoral dissertation]. Nice; 2014. [cited 2019 Aug 23]. Available from: http://www.theses.fr/2014NICE4020.

Council of Science Editors:

Coulon P. Croissance et caractérisation de nanofils/microfils de GaN : Growth and characterization of GaN nanowires/microwires. [Doctoral Dissertation]. Nice; 2014. Available from: http://www.theses.fr/2014NICE4020

22. Tendille, Florian. Ingénierie des défauts cristallins pour l’obtention de GaN semi-polaire hétéroépitaxié de haute qualité en vue d’applications optoélectroniques : Defect engineering applied to the development of high quality heteroepitaxial semipolar GaN for optoelectronic applications.

Degree: Docteur es, Physique, 2015, Nice

Les matériaux semi-conducteurs III-N sont à l’origine d’une véritable révolution technologique. Mais malgré l’effervescence autour de ces sources lumineuses, leurs performances dans le vert et… (more)

Subjects/Keywords: Semi-conducteurs III-V; Nitrure de gallium; Semi-polaire; Épitaxie; EPVOM; Cathodoluminescence; Croissance sélective; Diode électroluminescente; III-V semiconductors; Gallium nitride; Semipolar; Epitaxy; MOCVD; Cathodoluminescence; Selective area growth; Light emitting diode

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APA (6th Edition):

Tendille, F. (2015). Ingénierie des défauts cristallins pour l’obtention de GaN semi-polaire hétéroépitaxié de haute qualité en vue d’applications optoélectroniques : Defect engineering applied to the development of high quality heteroepitaxial semipolar GaN for optoelectronic applications. (Doctoral Dissertation). Nice. Retrieved from http://www.theses.fr/2015NICE4094

Chicago Manual of Style (16th Edition):

Tendille, Florian. “Ingénierie des défauts cristallins pour l’obtention de GaN semi-polaire hétéroépitaxié de haute qualité en vue d’applications optoélectroniques : Defect engineering applied to the development of high quality heteroepitaxial semipolar GaN for optoelectronic applications.” 2015. Doctoral Dissertation, Nice. Accessed August 23, 2019. http://www.theses.fr/2015NICE4094.

MLA Handbook (7th Edition):

Tendille, Florian. “Ingénierie des défauts cristallins pour l’obtention de GaN semi-polaire hétéroépitaxié de haute qualité en vue d’applications optoélectroniques : Defect engineering applied to the development of high quality heteroepitaxial semipolar GaN for optoelectronic applications.” 2015. Web. 23 Aug 2019.

Vancouver:

Tendille F. Ingénierie des défauts cristallins pour l’obtention de GaN semi-polaire hétéroépitaxié de haute qualité en vue d’applications optoélectroniques : Defect engineering applied to the development of high quality heteroepitaxial semipolar GaN for optoelectronic applications. [Internet] [Doctoral dissertation]. Nice; 2015. [cited 2019 Aug 23]. Available from: http://www.theses.fr/2015NICE4094.

Council of Science Editors:

Tendille F. Ingénierie des défauts cristallins pour l’obtention de GaN semi-polaire hétéroépitaxié de haute qualité en vue d’applications optoélectroniques : Defect engineering applied to the development of high quality heteroepitaxial semipolar GaN for optoelectronic applications. [Doctoral Dissertation]. Nice; 2015. Available from: http://www.theses.fr/2015NICE4094


University of New Mexico

23. Nami, Mohsen. NANOWIRE-BASED LIGHT-EMITTING DIODES: A NEW PATH TOWARDS HIGH-SPEED VISIBLE LIGHT COMMUNICATION.

Degree: Physics & Astronomy, 2017, University of New Mexico

  Nano-scale optoelectronic devices have gained significant attention in recent years. Among these devices are semiconductor nanowires, whose dimeters range from 100 to 200 nm.… (more)

Subjects/Keywords: Light-emitting diodes; Selective-area growth; III-nitride; Nanowire; 3-dB bandwidth modulation; Purcell effect; Plasmonics; Astrophysics and Astronomy; Electromagnetics and Photonics; Nanoscience and Nanotechnology; Nanotechnology Fabrication; Physics; Semiconductor and Optical Materials

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APA (6th Edition):

Nami, M. (2017). NANOWIRE-BASED LIGHT-EMITTING DIODES: A NEW PATH TOWARDS HIGH-SPEED VISIBLE LIGHT COMMUNICATION. (Doctoral Dissertation). University of New Mexico. Retrieved from https://digitalrepository.unm.edu/phyc_etds/168

Chicago Manual of Style (16th Edition):

Nami, Mohsen. “NANOWIRE-BASED LIGHT-EMITTING DIODES: A NEW PATH TOWARDS HIGH-SPEED VISIBLE LIGHT COMMUNICATION.” 2017. Doctoral Dissertation, University of New Mexico. Accessed August 23, 2019. https://digitalrepository.unm.edu/phyc_etds/168.

MLA Handbook (7th Edition):

Nami, Mohsen. “NANOWIRE-BASED LIGHT-EMITTING DIODES: A NEW PATH TOWARDS HIGH-SPEED VISIBLE LIGHT COMMUNICATION.” 2017. Web. 23 Aug 2019.

Vancouver:

Nami M. NANOWIRE-BASED LIGHT-EMITTING DIODES: A NEW PATH TOWARDS HIGH-SPEED VISIBLE LIGHT COMMUNICATION. [Internet] [Doctoral dissertation]. University of New Mexico; 2017. [cited 2019 Aug 23]. Available from: https://digitalrepository.unm.edu/phyc_etds/168.

Council of Science Editors:

Nami M. NANOWIRE-BASED LIGHT-EMITTING DIODES: A NEW PATH TOWARDS HIGH-SPEED VISIBLE LIGHT COMMUNICATION. [Doctoral Dissertation]. University of New Mexico; 2017. Available from: https://digitalrepository.unm.edu/phyc_etds/168


McMaster University

24. Robson, Mitchell. Antimonide Nanowires for Multispectral Infrared Photodetection.

Degree: PhD, 2018, McMaster University

Multispectral capabilities of nanowires (NWs) were explored for InAs and InAsSb NWs on Si(111) substrates. NWs were grown with the vapour-solid (VS) growth mode in… (more)

Subjects/Keywords: Nanowires; Infrared; Semiconductor; Antimony; Silicon; Selective-area epitaxy; Multispectral; MBE

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APA (6th Edition):

Robson, M. (2018). Antimonide Nanowires for Multispectral Infrared Photodetection. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/23892

Chicago Manual of Style (16th Edition):

Robson, Mitchell. “Antimonide Nanowires for Multispectral Infrared Photodetection.” 2018. Doctoral Dissertation, McMaster University. Accessed August 23, 2019. http://hdl.handle.net/11375/23892.

MLA Handbook (7th Edition):

Robson, Mitchell. “Antimonide Nanowires for Multispectral Infrared Photodetection.” 2018. Web. 23 Aug 2019.

Vancouver:

Robson M. Antimonide Nanowires for Multispectral Infrared Photodetection. [Internet] [Doctoral dissertation]. McMaster University; 2018. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/11375/23892.

Council of Science Editors:

Robson M. Antimonide Nanowires for Multispectral Infrared Photodetection. [Doctoral Dissertation]. McMaster University; 2018. Available from: http://hdl.handle.net/11375/23892

25. Goh, Wui Hean. Selective area growth and characterization of GaN based nanostructures by metal organic vapor phase epitaxy.

Degree: PhD, Electrical and Computer Engineering, 2013, Georgia Tech

 The objective of this project is to establish a new technology to grow high quality GaN based material by nano selective area growth (NSAG). The… (more)

Subjects/Keywords: Nanostructures; III-nitride; GaN; Selective area growth; Metal organic vapor phase epitaxy; Crystal growth; Epitaxy; Vapor-plating; Semiconductors

…x5D; was first to report selective area growth (SAG) of GaN on sapphire using MOVPE… …selective area growth (NSAG) is an extension of SAG to the level of the nano scale. The… …15 Selective area growth of GaN. After filling these openings, lateral growth starts and… …relaxation between (a) the conventional growth and (b) nano selective area… …x28;a) conventional growth and (b) nano selective area growth… 

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APA (6th Edition):

Goh, W. H. (2013). Selective area growth and characterization of GaN based nanostructures by metal organic vapor phase epitaxy. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/47720

Chicago Manual of Style (16th Edition):

Goh, Wui Hean. “Selective area growth and characterization of GaN based nanostructures by metal organic vapor phase epitaxy.” 2013. Doctoral Dissertation, Georgia Tech. Accessed August 23, 2019. http://hdl.handle.net/1853/47720.

MLA Handbook (7th Edition):

Goh, Wui Hean. “Selective area growth and characterization of GaN based nanostructures by metal organic vapor phase epitaxy.” 2013. Web. 23 Aug 2019.

Vancouver:

Goh WH. Selective area growth and characterization of GaN based nanostructures by metal organic vapor phase epitaxy. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/1853/47720.

Council of Science Editors:

Goh WH. Selective area growth and characterization of GaN based nanostructures by metal organic vapor phase epitaxy. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/47720


Swedish University of Agricultural Sciences

26. Forshed, Olle. Stand structure and development after selective logging with systematically aligned skid trails, directional felling and climber cutting in a dipterocarp rainforest in Sabah, Malaysia.

Degree: 2006, Swedish University of Agricultural Sciences

 The tropical rainforests around the world are extremely diverse and support a huge number of timber tree species and have therefore been severely logged. One… (more)

Subjects/Keywords: tropical rain forests; selective felling; hauling; damage; methods; stand characteristics; plant establishment; sabah; RIL; selective harvesting; diameter limit logging; logging damage; advance growth; basal area growth; tropical timber; Dipterocarpaceae; Macaranga spp.

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APA (6th Edition):

Forshed, O. (2006). Stand structure and development after selective logging with systematically aligned skid trails, directional felling and climber cutting in a dipterocarp rainforest in Sabah, Malaysia. (Doctoral Dissertation). Swedish University of Agricultural Sciences. Retrieved from http://pub.epsilon.slu.se/1069/

Chicago Manual of Style (16th Edition):

Forshed, Olle. “Stand structure and development after selective logging with systematically aligned skid trails, directional felling and climber cutting in a dipterocarp rainforest in Sabah, Malaysia.” 2006. Doctoral Dissertation, Swedish University of Agricultural Sciences. Accessed August 23, 2019. http://pub.epsilon.slu.se/1069/.

MLA Handbook (7th Edition):

Forshed, Olle. “Stand structure and development after selective logging with systematically aligned skid trails, directional felling and climber cutting in a dipterocarp rainforest in Sabah, Malaysia.” 2006. Web. 23 Aug 2019.

Vancouver:

Forshed O. Stand structure and development after selective logging with systematically aligned skid trails, directional felling and climber cutting in a dipterocarp rainforest in Sabah, Malaysia. [Internet] [Doctoral dissertation]. Swedish University of Agricultural Sciences; 2006. [cited 2019 Aug 23]. Available from: http://pub.epsilon.slu.se/1069/.

Council of Science Editors:

Forshed O. Stand structure and development after selective logging with systematically aligned skid trails, directional felling and climber cutting in a dipterocarp rainforest in Sabah, Malaysia. [Doctoral Dissertation]. Swedish University of Agricultural Sciences; 2006. Available from: http://pub.epsilon.slu.se/1069/


Universidade Nova

27. Campos, Claúdia Cristina Marinho. Predicting GDP growth in the Euro Area.

Degree: 2013, Universidade Nova

A Work Project, presented as part of the requirements for the Award of a Masters Degree in Finance from the NOVA – School of Business… (more)

Subjects/Keywords: Forecasting; Linear models; GDP growth; Euro Area

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APA (6th Edition):

Campos, C. C. M. (2013). Predicting GDP growth in the Euro Area. (Thesis). Universidade Nova. Retrieved from https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/9837

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Campos, Claúdia Cristina Marinho. “Predicting GDP growth in the Euro Area.” 2013. Thesis, Universidade Nova. Accessed August 23, 2019. https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/9837.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Campos, Claúdia Cristina Marinho. “Predicting GDP growth in the Euro Area.” 2013. Web. 23 Aug 2019.

Vancouver:

Campos CCM. Predicting GDP growth in the Euro Area. [Internet] [Thesis]. Universidade Nova; 2013. [cited 2019 Aug 23]. Available from: https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/9837.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Campos CCM. Predicting GDP growth in the Euro Area. [Thesis]. Universidade Nova; 2013. Available from: https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/9837

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New Mexico

28. Leonhardt, Darin. Selective epitaxial growth techniques to integrate high-quality germanium on silicon.

Degree: Chemical and Biological Engineering, 2011, University of New Mexico

 High-quality Ge-on-Si heterostructures have been actively pursued for many advanced applications, including near-infrared photodetectors, high-mobility field effect transistors, and virtual substrates for integrating III-V multijunction… (more)

Subjects/Keywords: Heteroepitaxy; Germanium; Silicon; Selective Growth; Electronic Materials; Molecular beam epitaxy.; Germanium crystals – Growth.

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APA (6th Edition):

Leonhardt, D. (2011). Selective epitaxial growth techniques to integrate high-quality germanium on silicon. (Doctoral Dissertation). University of New Mexico. Retrieved from http://hdl.handle.net/1928/12863

Chicago Manual of Style (16th Edition):

Leonhardt, Darin. “Selective epitaxial growth techniques to integrate high-quality germanium on silicon.” 2011. Doctoral Dissertation, University of New Mexico. Accessed August 23, 2019. http://hdl.handle.net/1928/12863.

MLA Handbook (7th Edition):

Leonhardt, Darin. “Selective epitaxial growth techniques to integrate high-quality germanium on silicon.” 2011. Web. 23 Aug 2019.

Vancouver:

Leonhardt D. Selective epitaxial growth techniques to integrate high-quality germanium on silicon. [Internet] [Doctoral dissertation]. University of New Mexico; 2011. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/1928/12863.

Council of Science Editors:

Leonhardt D. Selective epitaxial growth techniques to integrate high-quality germanium on silicon. [Doctoral Dissertation]. University of New Mexico; 2011. Available from: http://hdl.handle.net/1928/12863


University of Washington

29. Gamble, Madilyn Marisa. Size-selective mortality and environmental factors affecting early marine growth during early marine life stages of sub-yearling Chinook salmon in Puget Sound, Washington.

Degree: 2016, University of Washington

 Body size, mediated through biotic and abiotic factors affecting growth, is fundamental in determining survival as larger animals are usually less vulnerable to predation, starvation,… (more)

Subjects/Keywords: Chinook salmon; early marine growth; size-selective mortality; Aquatic sciences; fisheries

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APA (6th Edition):

Gamble, M. M. (2016). Size-selective mortality and environmental factors affecting early marine growth during early marine life stages of sub-yearling Chinook salmon in Puget Sound, Washington. (Thesis). University of Washington. Retrieved from http://hdl.handle.net/1773/37129

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gamble, Madilyn Marisa. “Size-selective mortality and environmental factors affecting early marine growth during early marine life stages of sub-yearling Chinook salmon in Puget Sound, Washington.” 2016. Thesis, University of Washington. Accessed August 23, 2019. http://hdl.handle.net/1773/37129.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gamble, Madilyn Marisa. “Size-selective mortality and environmental factors affecting early marine growth during early marine life stages of sub-yearling Chinook salmon in Puget Sound, Washington.” 2016. Web. 23 Aug 2019.

Vancouver:

Gamble MM. Size-selective mortality and environmental factors affecting early marine growth during early marine life stages of sub-yearling Chinook salmon in Puget Sound, Washington. [Internet] [Thesis]. University of Washington; 2016. [cited 2019 Aug 23]. Available from: http://hdl.handle.net/1773/37129.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gamble MM. Size-selective mortality and environmental factors affecting early marine growth during early marine life stages of sub-yearling Chinook salmon in Puget Sound, Washington. [Thesis]. University of Washington; 2016. Available from: http://hdl.handle.net/1773/37129

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Sherbrooke

30. Rughetti, Marco. Conséquences de la chasse sur l'écologie et la gestion du chamois (Rupicapra rupicapra) .

Degree: 2011, Université de Sherbrooke

 Harvesting is a human-imposed selective pressure. Harvest-induced mortality is not random and mostly targets heritable traits. Human harvest may impose an artificial selection pressure on… (more)

Subjects/Keywords: Rupicapra rupicapra; Primiparity; Dimorphism; Selective hunting; Horn growth; Body mass

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rughetti, M. (2011). Conséquences de la chasse sur l'écologie et la gestion du chamois (Rupicapra rupicapra) . (Doctoral Dissertation). Université de Sherbrooke. Retrieved from http://savoirs.usherbrooke.ca/handle/11143/5169

Chicago Manual of Style (16th Edition):

Rughetti, Marco. “Conséquences de la chasse sur l'écologie et la gestion du chamois (Rupicapra rupicapra) .” 2011. Doctoral Dissertation, Université de Sherbrooke. Accessed August 23, 2019. http://savoirs.usherbrooke.ca/handle/11143/5169.

MLA Handbook (7th Edition):

Rughetti, Marco. “Conséquences de la chasse sur l'écologie et la gestion du chamois (Rupicapra rupicapra) .” 2011. Web. 23 Aug 2019.

Vancouver:

Rughetti M. Conséquences de la chasse sur l'écologie et la gestion du chamois (Rupicapra rupicapra) . [Internet] [Doctoral dissertation]. Université de Sherbrooke; 2011. [cited 2019 Aug 23]. Available from: http://savoirs.usherbrooke.ca/handle/11143/5169.

Council of Science Editors:

Rughetti M. Conséquences de la chasse sur l'écologie et la gestion du chamois (Rupicapra rupicapra) . [Doctoral Dissertation]. Université de Sherbrooke; 2011. Available from: http://savoirs.usherbrooke.ca/handle/11143/5169

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